TWI602944B - 含碳之矽膜之形成方法 - Google Patents

含碳之矽膜之形成方法 Download PDF

Info

Publication number
TWI602944B
TWI602944B TW104105218A TW104105218A TWI602944B TW I602944 B TWI602944 B TW I602944B TW 104105218 A TW104105218 A TW 104105218A TW 104105218 A TW104105218 A TW 104105218A TW I602944 B TWI602944 B TW I602944B
Authority
TW
Taiwan
Prior art keywords
ruthenium
reaction tube
gas
forming
carbon
Prior art date
Application number
TW104105218A
Other languages
English (en)
Chinese (zh)
Other versions
TW201546313A (zh
Inventor
柿本明修
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201546313A publication Critical patent/TW201546313A/zh
Application granted granted Critical
Publication of TWI602944B publication Critical patent/TWI602944B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW104105218A 2014-02-25 2015-02-16 含碳之矽膜之形成方法 TWI602944B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014033686A JP2015159212A (ja) 2014-02-25 2014-02-25 カーボンを含むシリコン膜の形成方法、及び、形成装置

Publications (2)

Publication Number Publication Date
TW201546313A TW201546313A (zh) 2015-12-16
TWI602944B true TWI602944B (zh) 2017-10-21

Family

ID=53882893

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104105218A TWI602944B (zh) 2014-02-25 2015-02-16 含碳之矽膜之形成方法

Country Status (4)

Country Link
US (1) US9490122B2 (https=)
JP (1) JP2015159212A (https=)
KR (1) KR20150100557A (https=)
TW (1) TWI602944B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6717632B2 (ja) * 2016-03-29 2020-07-01 一般財団法人ファインセラミックスセンター 蒸着処理装置
JP6318188B2 (ja) * 2016-03-30 2018-04-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6999616B2 (ja) * 2019-08-07 2022-01-18 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
WO2022260476A1 (ko) * 2021-06-11 2022-12-15 주성엔지니어링(주) 전력 반도체 소자의 제조방법
JP7818489B2 (ja) * 2022-08-12 2026-02-20 東京エレクトロン株式会社 成膜方法および成膜装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW527429B (en) * 1999-10-15 2003-04-11 Asm Inc Deposition of transition metal carbides
US20120000490A1 (en) * 2010-07-01 2012-01-05 Applied Materials, Inc. Methods for enhanced processing chamber cleaning

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2692091B2 (ja) * 1987-10-31 1997-12-17 株式会社日本自動車部品総合研究所 炭化ケイ素半導体膜およびその製造方法
JPH086180B2 (ja) 1991-07-30 1996-01-24 科学技術庁金属材料技術研究所長 結晶性ＳｉＣ膜の製造法
US6117233A (en) 1995-02-07 2000-09-12 Max-Planck-Gesellschaft Zur Forderung De Formation of single-crystal thin SiC films
JP2008123213A (ja) 2006-11-10 2008-05-29 Canon Inc 画像出力装置及び文書処理方法
US7888248B2 (en) 2007-07-13 2011-02-15 Northrop Grumman Systems Corporation Method of producing large area SiC substrates
US8012859B1 (en) 2010-03-31 2011-09-06 Tokyo Electron Limited Atomic layer deposition of silicon and silicon-containing films
US9040127B2 (en) * 2010-09-24 2015-05-26 Applied Materials, Inc. Low temperature silicon carbide deposition process
JP6030378B2 (ja) * 2012-08-14 2016-11-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW527429B (en) * 1999-10-15 2003-04-11 Asm Inc Deposition of transition metal carbides
US20120000490A1 (en) * 2010-07-01 2012-01-05 Applied Materials, Inc. Methods for enhanced processing chamber cleaning

Also Published As

Publication number Publication date
JP2015159212A (ja) 2015-09-03
US9490122B2 (en) 2016-11-08
TW201546313A (zh) 2015-12-16
KR20150100557A (ko) 2015-09-02
US20150243496A1 (en) 2015-08-27

Similar Documents

Publication Publication Date Title
US9895727B2 (en) Method of manufacturing semiconductor device, method of cleaning interior of process chamber, substrate processing apparatus, and recording medium
JP4974815B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
US9587308B2 (en) Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP5346904B2 (ja) 縦型成膜装置およびその使用方法
CN100524650C (zh) 使用原子层沉积法的氮化硅膜的形成方法
JP6671262B2 (ja) 窒化膜の形成方法および形成装置
JP4456533B2 (ja) シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム
JP5113705B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP4918453B2 (ja) ガス供給装置及び薄膜形成装置
TWI602944B (zh) 含碳之矽膜之形成方法
CN101440482A (zh) 薄膜形成装置及其使用方法
TW201447017A (zh) 矽氧化物膜之形成方法、及矽氧化物膜之形成裝置
TW201600622A (zh) 非晶矽膜形成裝置之清洗方法、非晶矽膜之形成方法、及非晶矽膜形成裝置
JP2008283148A (ja) 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
TWI683347B (zh) 基板處理裝置、半導體裝置的製造方法及記錄媒體
JP6349234B2 (ja) シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置
TW201708595A (zh) 矽氮化膜之形成方法及矽氮化膜之形成裝置
KR20150110358A (ko) 실리콘 산화막 형성 장치의 세정 방법, 실리콘 산화막의 형성 방법, 및 실리콘 산화막 형성 장치
JP5571233B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP6340332B2 (ja) 薄膜形成方法、および、薄膜形成装置
TW201544624A (zh) 矽氮化膜之形成裝置及矽氮化膜之形成方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees