TWI599582B - 新穎嵌段共聚物之組合物及自我組裝方法 - Google Patents
新穎嵌段共聚物之組合物及自我組裝方法 Download PDFInfo
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- TWI599582B TWI599582B TW105128328A TW105128328A TWI599582B TW I599582 B TWI599582 B TW I599582B TW 105128328 A TW105128328 A TW 105128328A TW 105128328 A TW105128328 A TW 105128328A TW I599582 B TWI599582 B TW I599582B
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- coating
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- copolymer
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- alkyl
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- MYXKPFMQWULLOH-UHFFFAOYSA-M tetramethylazanium;hydroxide;pentahydrate Chemical compound O.O.O.O.O.[OH-].C[N+](C)(C)C MYXKPFMQWULLOH-UHFFFAOYSA-M 0.000 description 1
- RXMRGBVLCSYIBO-UHFFFAOYSA-M tetramethylazanium;iodide Chemical compound [I-].C[N+](C)(C)C RXMRGBVLCSYIBO-UHFFFAOYSA-M 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/63—Carboxylic acid nitriles containing cyano groups and nitrogen atoms further bound to other hetero atoms, other than oxygen atoms of nitro or nitroso groups, bound to the same carbon skeleton
- C07C255/65—Carboxylic acid nitriles containing cyano groups and nitrogen atoms further bound to other hetero atoms, other than oxygen atoms of nitro or nitroso groups, bound to the same carbon skeleton with the nitrogen atoms further bound to nitrogen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F4/04—Azo-compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
- C09D125/04—Homopolymers or copolymers of styrene
- C09D125/08—Copolymers of styrene
- C09D125/14—Copolymers of styrene with unsaturated esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
- C09D125/16—Homopolymers or copolymers of alkyl-substituted styrenes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/10—Homopolymers or copolymers of methacrylic acid esters
- C09D133/12—Homopolymers or copolymers of methyl methacrylate
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Graft Or Block Polymers (AREA)
- Paints Or Removers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Laminated Bodies (AREA)
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- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/885,328 US9574104B1 (en) | 2015-10-16 | 2015-10-16 | Compositions and processes for self-assembly of block copolymers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201718676A TW201718676A (zh) | 2017-06-01 |
| TWI599582B true TWI599582B (zh) | 2017-09-21 |
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| TW105128328A TWI599582B (zh) | 2015-10-16 | 2016-09-02 | 新穎嵌段共聚物之組合物及自我組裝方法 |
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| EP (1) | EP3362404B1 (OSRAM) |
| JP (1) | JP6788668B2 (OSRAM) |
| KR (1) | KR102398438B1 (OSRAM) |
| CN (1) | CN108137313B (OSRAM) |
| TW (1) | TWI599582B (OSRAM) |
| WO (1) | WO2017064199A1 (OSRAM) |
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| JP2016223046A (ja) * | 2015-06-04 | 2016-12-28 | 東京応化工業株式会社 | 表面にパターンを有する繊維の製造方法 |
| KR102402958B1 (ko) * | 2015-11-11 | 2022-05-27 | 삼성전자주식회사 | 반도체 장치의 패턴 형성 방법 및 반도체 장치의 제조 방법 |
| JP6955176B2 (ja) * | 2016-07-06 | 2021-10-27 | Jsr株式会社 | 膜形成用組成物、膜形成方法及び自己組織化リソグラフィープロセス |
| EP3500637B1 (en) | 2016-08-18 | 2022-06-22 | Merck Patent GmbH | Polymer compositions for self-assembly applications |
| US10691019B2 (en) * | 2016-10-07 | 2020-06-23 | Jsr Corporation | Pattern-forming method and composition |
| TWI755344B (zh) | 2016-12-21 | 2022-02-11 | 德商馬克專利公司 | 用於嵌段共聚物之自組裝之新穎組合物及方法 |
| US10734239B2 (en) * | 2017-03-01 | 2020-08-04 | Brewer Science, Inc. | High-chi block copolymers with tunable glass transition temperatures for directed self-assembly |
| US10961383B2 (en) | 2018-02-01 | 2021-03-30 | Brewer Science, Inc. | Gradient block copolymers for directed self-assembly |
| JP7081377B2 (ja) * | 2018-08-01 | 2022-06-07 | Jsr株式会社 | 組成物及び基板表面の修飾方法 |
| CN113490696B (zh) * | 2018-12-07 | 2022-12-23 | 默克专利股份有限公司 | 用于聚苯乙烯-b-聚(甲基丙烯酸甲酯)二嵌段共聚物的接触孔自组装的快速可交联中性底层及其配制剂 |
| EP3772370A1 (en) * | 2019-08-05 | 2021-02-10 | Helmholtz-Zentrum Geesthacht Zentrum für Material- und Küstenforschung GmbH | Method of producing a polymeric membrane |
| JP7646684B2 (ja) * | 2020-08-17 | 2025-03-17 | Jsr株式会社 | 下層膜形成用組成物、下層膜、及び、リソグラフィープロセス |
| EP4341310B1 (en) * | 2021-05-18 | 2025-06-25 | Merck Patent GmbH | Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers |
| EP4441110A1 (en) | 2021-12-02 | 2024-10-09 | Merck Patent GmbH | Neutral layer and hydrophobic pinning mat materials for use in dsa with improved substrate compatibility |
| CN115826359A (zh) * | 2022-11-22 | 2023-03-21 | 西南科技大学 | 用于光刻图案化的全碳氢低介电损耗光敏树脂的制备及应用 |
| WO2024170492A1 (en) | 2023-02-14 | 2024-08-22 | Merck Patent Gmbh | Block copolymer formulation for the improvement of self-assembled morphology in directed self-assembly application |
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| JP4101658B2 (ja) * | 2001-02-23 | 2008-06-18 | エーエムエス−ケミエ アーゲー | ポリアルキル（メタ）アクリレートセグメントおよびポリアミドセグメントからなる熱可塑性ブロックコポリマーならびにその使用 |
| US20090286927A1 (en) * | 2005-06-27 | 2009-11-19 | Niels Dan Anders Sodergard | Hyperbranched Polymers |
| KR100926697B1 (ko) * | 2007-06-12 | 2009-11-17 | 연세대학교 산학협력단 | 온도와 조성에 의한 부피 수축 원리를 이용한 다공성 나노구조체의 기공 크기 조절 |
| US7521094B1 (en) | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
| US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
| US8114301B2 (en) * | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
| US7560141B1 (en) | 2008-11-11 | 2009-07-14 | International Business Machines Corporation | Method of positioning patterns from block copolymer self-assembly |
| US8569427B2 (en) * | 2009-10-08 | 2013-10-29 | University Of South Carolina | Polymers derived from rosin and their methods of preparation |
| US8691925B2 (en) * | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
| US8835581B2 (en) * | 2012-06-08 | 2014-09-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Neutral layer polymer composition for directed self assembly and processes thereof |
| KR102245179B1 (ko) * | 2013-04-03 | 2021-04-28 | 브레우어 사이언스, 인코포레이션 | 지향성 자가 조립용 블록 공중합체에 사용하기 위한 고도로 내에칭성인 중합체 블록 |
| US9291909B2 (en) | 2013-05-17 | 2016-03-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Composition comprising a polymeric thermal acid generator and processes thereof |
| KR102422401B1 (ko) * | 2013-12-31 | 2022-07-18 | 다우 글로벌 테크놀로지스 엘엘씨 | 방향성 자가-조립 패턴 형성방법 및 조성물 |
| JP6558894B2 (ja) * | 2013-12-31 | 2019-08-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | コポリマーの設計、その製造方法およびそれを含む物品 |
| WO2015109224A1 (en) * | 2014-01-16 | 2015-07-23 | Brewer Science Inc. | High-chi block copolymers for directed self-assembly |
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2015
- 2015-10-16 US US14/885,328 patent/US9574104B1/en active Active
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2016
- 2016-09-02 TW TW105128328A patent/TWI599582B/zh active
- 2016-10-13 WO PCT/EP2016/074614 patent/WO2017064199A1/en not_active Ceased
- 2016-10-13 CN CN201680058211.8A patent/CN108137313B/zh active Active
- 2016-10-13 EP EP16781447.4A patent/EP3362404B1/en active Active
- 2016-10-13 KR KR1020187013963A patent/KR102398438B1/ko active Active
- 2016-10-13 JP JP2018519469A patent/JP6788668B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3362404B1 (en) | 2021-07-28 |
| US9574104B1 (en) | 2017-02-21 |
| TW201718676A (zh) | 2017-06-01 |
| KR102398438B1 (ko) | 2022-05-13 |
| CN108137313B (zh) | 2019-10-18 |
| JP2018538382A (ja) | 2018-12-27 |
| KR20180072735A (ko) | 2018-06-29 |
| JP6788668B2 (ja) | 2020-11-25 |
| CN108137313A (zh) | 2018-06-08 |
| EP3362404A1 (en) | 2018-08-22 |
| WO2017064199A1 (en) | 2017-04-20 |
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