TWI599272B - 根據三個或更多狀態之功率及頻率調整 - Google Patents

根據三個或更多狀態之功率及頻率調整 Download PDF

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Publication number
TWI599272B
TWI599272B TW102133223A TW102133223A TWI599272B TW I599272 B TWI599272 B TW I599272B TW 102133223 A TW102133223 A TW 102133223A TW 102133223 A TW102133223 A TW 102133223A TW I599272 B TWI599272 B TW I599272B
Authority
TW
Taiwan
Prior art keywords
state
power
generator
level
primary
Prior art date
Application number
TW102133223A
Other languages
English (en)
Chinese (zh)
Other versions
TW201427496A (zh
Inventor
小約翰Ｃ 微寇爾
布萊佛Ｊ 琳戴克
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/016,841 external-priority patent/US9462672B2/en
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW201427496A publication Critical patent/TW201427496A/zh
Application granted granted Critical
Publication of TWI599272B publication Critical patent/TWI599272B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2223/00—Details of transit-time tubes of the types covered by group H01J2225/00
    • H01J2223/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
    • H01J2223/18—Resonators
    • H01J2223/20—Cavity resonators; Adjustment or tuning thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
TW102133223A 2012-09-14 2013-09-13 根據三個或更多狀態之功率及頻率調整 TWI599272B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261701574P 2012-09-14 2012-09-14
US14/016,841 US9462672B2 (en) 2012-02-22 2013-09-03 Adjustment of power and frequency based on three or more states

Publications (2)

Publication Number Publication Date
TW201427496A TW201427496A (zh) 2014-07-01
TWI599272B true TWI599272B (zh) 2017-09-11

Family

ID=50318412

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102133223A TWI599272B (zh) 2012-09-14 2013-09-13 根據三個或更多狀態之功率及頻率調整

Country Status (3)

Country Link
KR (1) KR102165741B1 (ko)
CN (2) CN106935473B (ko)
TW (1) TWI599272B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI799727B (zh) * 2019-08-06 2023-04-21 日商京三製作所股份有限公司 脈衝化射頻監視器

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* Cited by examiner, † Cited by third party
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TWI677263B (zh) * 2014-04-23 2019-11-11 美商蘭姆研究公司 軟脈動
TWI735912B (zh) * 2014-08-22 2021-08-11 美商蘭姆研究公司 在一狀態期間中的次脈動用之電漿系統、電漿工具、射頻產生器、控制器、及方法
JP5797313B1 (ja) * 2014-08-25 2015-10-21 株式会社京三製作所 回生サーキュレータ、高周波電源装置、及び高周波電力の回生方法
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
US9577516B1 (en) * 2016-02-18 2017-02-21 Advanced Energy Industries, Inc. Apparatus for controlled overshoot in a RF generator
US10610953B2 (en) * 2016-04-12 2020-04-07 Hypertherm, Inc. Systems and methods for providing power for plasma arc cutting
US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
US10395894B2 (en) * 2017-08-31 2019-08-27 Lam Research Corporation Systems and methods for achieving peak ion energy enhancement with a low angular spread
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
WO2020223129A1 (en) * 2019-04-29 2020-11-05 Lam Research Corporation Systems and methods for multi-level pulsing in rf plasma tools

Citations (5)

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TW200733231A (en) * 2005-12-16 2007-09-01 Lam Res Corp Apparatus and method for controlling plasma density profile
TW201038143A (en) * 2008-12-02 2010-10-16 Tokyo Electron Ltd Plasma processing apparatus and operation method of the same
TW201038142A (en) * 2009-04-10 2010-10-16 Hitachi High Tech Corp Plasma Processing System
US20110118863A1 (en) * 2009-11-19 2011-05-19 Valcore Jr John C Methods and apparatus for controlling a plasma processing system
US20120000887A1 (en) * 2010-06-30 2012-01-05 Kabushiki Kaisha Toshiba Plasma treatment apparatus and plasma treatment method

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JP2001168086A (ja) * 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7602127B2 (en) * 2005-04-18 2009-10-13 Mks Instruments, Inc. Phase and frequency control of a radio frequency generator from an external source
CN101896034A (zh) * 2007-04-13 2010-11-24 中微半导体设备(上海)有限公司 射频功率源系统及使用该射频功率源系统的等离子体反应腔室
TWI383712B (zh) * 2007-05-22 2013-01-21 Advanced Micro Fab Equip Inc An RF power source system and a plasma reaction chamber using the RF power source system
JP5490699B2 (ja) * 2007-09-21 2014-05-14 クゥアルコム・インコーポレイテッド 信号追跡を行う信号生成器
KR101124770B1 (ko) * 2008-03-31 2012-03-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리장치 및 플라즈마 처리방법 및 컴퓨터 판독이 가능한 기억 매체
KR20150017389A (ko) * 2008-05-14 2015-02-16 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치
KR101510775B1 (ko) * 2008-11-24 2015-04-10 삼성전자주식회사 동기식 펄스 플라즈마 에칭 장비

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200733231A (en) * 2005-12-16 2007-09-01 Lam Res Corp Apparatus and method for controlling plasma density profile
TW201038143A (en) * 2008-12-02 2010-10-16 Tokyo Electron Ltd Plasma processing apparatus and operation method of the same
TW201038142A (en) * 2009-04-10 2010-10-16 Hitachi High Tech Corp Plasma Processing System
US20110118863A1 (en) * 2009-11-19 2011-05-19 Valcore Jr John C Methods and apparatus for controlling a plasma processing system
US20120000887A1 (en) * 2010-06-30 2012-01-05 Kabushiki Kaisha Toshiba Plasma treatment apparatus and plasma treatment method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI799727B (zh) * 2019-08-06 2023-04-21 日商京三製作所股份有限公司 脈衝化射頻監視器

Also Published As

Publication number Publication date
CN106935473A (zh) 2017-07-07
CN103681195B (zh) 2017-03-01
KR20140035860A (ko) 2014-03-24
CN106935473B (zh) 2018-11-02
CN103681195A (zh) 2014-03-26
TW201427496A (zh) 2014-07-01
KR102165741B1 (ko) 2020-10-15

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