TWI599272B - Adjustment of power and frequency based on three or more states - Google Patents

Description

Adjust based on power and frequency of three or more states

This embodiment relates to improving the reaction time to changes in plasma impedance, and more particularly to apparatus, methods, and computer programs for adjusting power and frequency based on three or more states.

In some plasma processing systems, a plurality of radio frequency (RF) signals are provided to one or more electrodes within the plasma chamber. The RF signal helps generate plasma in the plasma chamber. The plasma is used for various operations such as cleaning a substrate disposed over the lower electrode, etching the substrate, and the like.

The embodiment described in the present disclosure is produced in this case.

Embodiments of the present disclosure provide apparatus, methods, and computer programs for adjusting power and frequency based on three or more states. It will be appreciated that the embodiments can be implemented in many ways, such as steps, devices, systems, apparatuses, or methods on a computer readable medium. Several embodiments are described below.

In some embodiments, a plasma processing system is described. The plasma system includes a primary generator that includes three primary power controllers. Each primary power controller is configured to be set at a predetermined power. The plasma system includes a secondary generator that includes three power controllers. Each secondary power controller is configured to be set at a predetermined power. The plasma system includes a control circuit as an interface to the primary and secondary generators. The control circuit is configured to generate a pulse signal, the pulse signal being defined to include three states, the states defining a cycle, This cycle is repeated a plurality of times during the operation. Each state is defined as selecting the first, second, or third primary power controller of the three primary power controllers, and also selecting the first, second, or third secondary of the power controllers three times. Power controller.

In an embodiment, a power configured to operate based on a majority of states is described Pulp system. The plasma system includes a primary radio frequency (RF) generator for receiving pulsed signals. The pulse signal has three or more states. The three or more states include a first state, a second state, and a third state. The primary RF generator is configured to be coupled to the plasma chamber via an impedance matching circuit. The plasma system further includes a secondary RF generator for receiving a pulse signal. The secondary RF generator is configured to be coupled to the plasma chamber via an impedance matching circuit. Each of the primary RF generator and the secondary RF generator is configured to determine whether the pulse signal is in the first state, or the second state, or the third state. The primary RF generator is configured to provide an RF signal having a first primary quantitative level to the impedance matching circuit in response to the determination that the pulse signal is in the first state. The secondary RF generator is configured to provide an RF signal having a first secondary quantitative level to the impedance matching circuit in response to the determination that the pulse signal is in the first state. The primary RF generator is configured to provide an RF signal having a first primary quantitative level to the impedance matching circuit in response to the determination that the pulse signal is in the second state. The secondary RF generator is configured to provide an RF signal having a second secondary quantitative level to the impedance matching circuit in response to the determination that the pulse signal is in the second state. The primary RF generator is configured to provide an RF signal having a second primary quantitative level to the impedance matching circuit in response to the determination that the pulse signal is in the third state. The secondary RF generator is configured to provide an RF signal having a third secondary quantitative level to the impedance matching circuit in response to the determination that the pulse signal is in the third state.

In several embodiments, a configuration is described that operates based on a majority state Plasma system. The plasma system includes a primary radio frequency (RF) generator for receiving a pulse signal having three or more states. The three or more states include a first state, a second state, and a third state. The primary RF generator is configured to be coupled to the plasma chamber via an impedance matching circuit. The primary RF generator is configured to determine if the pulse signal is in the first state, or the second state, or the third state. The primary RF generator is configured to provide an RF signal having a first primary quantitative level to the plasma chamber to excite the plasma in response to a determination that the pulse signal is in a first state; the primary RF generator is configured to have The first primary quantitative level RF signal is provided to the plasma chamber in response to the determination that the pulse signal is in the second state; and the primary RF generator is configured to An RF signal having a second primary quantitative level is provided to the plasma chamber in response to a determination that the pulse signal is in a third state. The plasma system includes a secondary RF generator configured to be coupled to the plasma chamber via an impedance matching circuit. The secondary RF generator determines if the parameter associated with the plasma exceeds the first threshold. The secondary RF generator is configured to provide an RF signal having a first quasi-quantitative level in response to a determination that the plasma-related parameter does not exceed a first threshold; and the secondary RF generator is configured to provide The second time, the level of the RF signal is quantified in response to a determination that the plasma-related parameter exceeds the first threshold.

In some embodiments, the plasma method includes receiving a pulse signal. Receiving pulse letter The operation of the number is performed by the main processor. The plasma method further includes receiving a pulse signal. The operation of receiving the pulse signal is performed by the secondary processor. The method includes determining if the pulse signal is in a first state, or a second state, or a third state. The operation of determining whether the pulse signal is in the first state, or the second state, or the third state is performed by the primary processor. The method includes determining if the pulse signal is in a first state, or a second state, or a third state. The operation of determining whether the pulse signal is in the first state, or the second state, or the third state is performed by the secondary processor. The method further includes providing a first primary quantitative level of the first radio frequency (RF) signal to the primary power source in response to the determination that the pulse signal is in the first state. The operation that provides the first primary quantitative level is performed by the primary processor. The method includes providing a first secondary quantitative level of the second RF signal to the secondary power source in response to the determination that the pulse signal is in the first state. The operation that provides the first quantification level is performed by the secondary processor.

In these embodiments, the plasma method includes the first primary of the first RF signal The quantitative level is provided to the primary power source in response to the determination that the pulse signal is in the second state. The operation that provides the first primary quantitative level is performed by the primary processor. The method includes providing a second secondary quantitative level of the second RF signal to the secondary power source in response to the determination that the pulse signal is in the second state. The operation that provides the second quantification level is performed by the secondary processor. The method includes providing a second primary quantitative level of the first RF signal to the primary power source in response to the determination that the pulse signal is in the third state. The operation that provides the second primary quantitative level is performed by the primary processor. The method includes providing a third quasi-quantitative level of the second RF signal to the secondary power source in response to the determination that the pulse signal is in the third state. The operation that provides the third quantification level is performed by the secondary processor.

Some of the advantages of the above embodiments include shortening the plasma impedance to the plasma chamber Change the reaction time of the reaction. For example, when using a pulse signal (such as a transistor-transistor logic (TTL) signal, etc.) to control the frequency and/or power supplied by most RF power sources, the first RF power source does not require time to align with the second A change in the power and/or frequency of the RF power source reacts. Typically, when the frequency and/or power input to the first RF power source changes, the plasma impedance will change and the first RF power source will react to the impedance change. This reaction takes time, which has a negative impact on processes that occur within the plasma chamber (eg, etching, deposition, cleaning, etc.). When the RF power source reacts to a state change of a state signal having a predetermined frequency and/or a predetermined power, the time to react to changes in the plasma impedance is shortened. This shortening of time results in a shorter time that usually has a negative impact on the process.

Some additional advantages of the above embodiments include providing accurate power and/or frequency Level to stabilize the plasma, for example to reduce the difference between source and load impedance. When the power and/or frequency level is generated based on changes in plasma impedance, the frequency and/or power level is accurate. For example, the complex voltage and the complex current are measured and used to generate a plasma impedance change. It is judged whether the plasma impedance change exceeds a critical value; if it is exceeded, the power and/or frequency level is changed to stabilize the plasma.

Other advantages of the embodiments include shortening the amount of time that the plasma reaches a stable state. Training example The line operation is used to determine the frequency and/or power level applied to the driver and amplifier system. The power and/or frequency level corresponding to the change in plasma impedance is also determined during the training routine. Training routines save production time, such as time to clean the substrate, time to process the substrate, time to etch the substrate, time to deposit material on the substrate, and the like. For example, during production, when it is determined that the plasma impedance change exceeds a threshold, the power and/or frequency level is applied to the power source without adjusting the power and/or frequency level.

Other embodiments will become apparent from the following detailed description of the drawings.

100‧‧‧ system

102‧‧‧ pulse signal

104‧‧‧The plasma chamber

106‧‧‧ impedance matching circuit

120‧‧‧ lower electrode

122‧‧‧Upper electrode

124‧‧‧Substrate

126‧‧‧ upper surface

130, 132, 134, 138, 141, 142‧‧ Automatic frequency tuner

140, 153‧‧‧ digital signal processor

144, 146, 148, 150, 152, 154‧‧‧ power controller

151‧‧‧Tool user interface

160, 162‧‧‧ power supply

180, 182‧‧‧RF cable

184‧‧‧RF transmission line

190, 201‧‧‧ charts

200‧‧‧ system

210, 212‧‧‧ sensor

220, 222, 224‧‧‧Automatic frequency tuner

221, 223‧‧‧ analog digital converter

226‧‧‧Selection logic

228‧‧‧ clock source

232‧‧‧Power supply

250‧‧‧Form

260‧‧‧ system

270‧‧‧Digital Signal Processor

272‧‧‧ sensor

302, 304, 306, 308‧‧‧ charts

310, 312, 314, 316‧‧‧ charts

320, 322, 324, 326‧‧‧ charts

328, 330, 332, 334‧‧‧ charts

336, 338, 340, 342‧‧‧ charts

344, 346, 348, 350‧‧‧ charts

352, 354, 356, 358‧‧‧ charts

360, 362, 364, 366‧‧‧ charts

368, 370, 372, 374‧‧‧ charts

376, 378, 380, 382‧‧‧ charts

384, 386, 388, 390‧‧‧ charts

392, 394, 396, 398‧‧‧ charts

402, 404, 406, 408‧‧‧ charts

410, 412, 414, 416‧‧‧ charts

418, 420, 422, 424‧‧‧ charts

426, 428, 430, 432‧‧‧ charts

S1, S2, S3‧‧‧ Status

The embodiments are most effectively understood by reference to the following description in conjunction with the drawings.

1 is a block diagram of a system in accordance with an embodiment of the present disclosure that adjusts the power and/or frequency of a radio frequency (RF) generator based on a plurality of states of a pulse signal.

2 is a diagram of an embodiment in accordance with the present disclosure showing states S1, S2, and S3.

3 is a line drawing of a chart in accordance with an embodiment of the present disclosure showing different periods of different states.

4 is a schematic illustration of a system in accordance with an embodiment of the present disclosure that selects one of an automatic frequency tuner (AFT) based on the state of the pulse signal.

5 is a schematic diagram of a system in accordance with an embodiment of the present disclosure that controls the frequency and/or power of an RF signal generated by a y MHz RF generator based on the state of the pulse signal and the impedance variation of the plasma.

Figure 6 is a schematic illustration of a table in accordance with an embodiment of the present disclosure showing a comparison of impedance changes to threshold values to determine the power level or frequency level of the RF signal supplied by the RF generator.

7 is a schematic illustration of a system in accordance with an embodiment of the present disclosure that selects an AFT based on the state of the pulse signal and based on whether the parameter value exceeds a threshold.

8A is a line diagram of a diagram in accordance with an embodiment of the present disclosure, the graph showing signals generated by two RF generators, wherein one of the signals has different power values in each state, and the signals The other has a zero power value during a state.

Figure 8B is a line diagram of a diagram of an embodiment in accordance with the present disclosure showing signals generated by two RF generators, wherein one of the signals has the same power value in two states and the signals The other has a zero power value during a state.

9A is a line diagram of a diagram in accordance with an embodiment of the present disclosure, the graph showing signals generated by two RF generators, wherein one of the signals has different power values in each state, and the signals The other has a non-zero power value during all states.

9B is a line diagram of a diagram of an embodiment of the present disclosure showing signals generated by two RF generators, wherein one of the signals has the same power value in two states and the signals The other has a non-zero power value during all states.

10A is a line diagram of a diagram of an embodiment of the present disclosure showing signals generated by three RF generators, wherein one of the signals has The different power values, the other of the signals have a zero power value during one state, and the other of the signals has a fixed power value during all states.

Figure 10B is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has the same power value in two states, the other of the signals has a zero power value during a state, and the signals are again One has a fixed power value during all states.

Figure 11A is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has different power values in each state, the other of the signals has a non-zero power value during all states, and the signals are again The other has a fixed power value during all states.

Figure 11B is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has the same power value in two states, the other of the signals has a non-zero power value during all states, and the signals are again The other has a fixed power value during all states.

Figure 12A is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has different power values in each state, the other of the signals has a zero power value during a state, and the signals are again One has the same power value during the two states.

Figure 12B is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has the same power value in two states, the other of the signals has a zero power value during a state, and the signals are again One has the same power value during the two states.

Figure 13A is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has different power values in each state, the other of the signals has a non-zero power value during all states, and the signals are again The other has the same power value during the two states.

Figure 13B is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has the same power value in two states, the other of the signals has a non-zero power value during all states, and such The other of the signals has the same power value during the two states.

Figure 14A is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has different power values in each state, the other of the signals has a zero power value during a state, and the signals are again One has the same power value during the two states.

Figure 14B is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has the same power value in two states, the other of the signals has a zero power value during a state, and the signals are again One has the same power value during the two states.

Figure 15A is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has different power values in each state, the other of the signals has a non-zero power value during all states, and the signals are again The other has the same power value during the two states.

Figure 15B is a line drawing of a chart in accordance with an embodiment of the present disclosure, The graph shows signals generated by three RF generators, wherein one of the signals has the same power value in two states, the other of the signals has a non-zero power value during all states, and the signals are again The other has the same power value during the two states.

The following embodiments describe power and frequency adjustment based on three or more states System and method. It is apparent that the embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order to unnecessarily obscure the embodiments.

1 is a block diagram of an embodiment of system 100 during production of system 100. The power and/or frequency of the RF generator is adjusted based on a plurality of states of the pulse signal 102. System 100 includes a x-megahertz (MHz) radio frequency (RF) power generator that generates an RF signal, and the RF signal is supplied to lower electrode 120 of plasma chamber 104 via impedance matching circuit 106. Likewise, a y MHz power supply generates an RF signal and the RF signal is supplied to the lower electrode 120 via the impedance matching circuit 106.

The value of x can be 2, 27, or 60. Also, the value of y can be 27, 60, or 2. For example, when x is 2, y is 27 or 60. As another example, when x is 27, y is 2 or 60. As yet another example, when x is 60, y is 2 or 27. In addition, it should be noted that the values of 2 MHz, 27 MHz, and 60 MHz are provided by way of example and not limitation. For example, a 2.5 MHz RF generator can be used instead of a 2 MHz RF generator, and a 65 MHz RF generator can be used instead of a 60 MHz RF generator. In one embodiment, a 60 MHz RF generator can be used to provide RF power to the lower electrode 120 in addition to the 2 MHz RF generator and the 27 MHz RF generator.

The impedance matching circuit includes electronic circuit components (eg, inductors, capacitors, etc.) to match the impedance of the source coupled to the impedance matching circuit to the impedance of the load coupled to the impedance matching circuit. For example, the impedance matching circuit 106 causes the x MHz RF generator and the impedance of the x MHz RF generator to couple any element of the impedance matching circuit 106 (eg, RF cable, etc.) to the plasma chamber 104 and the plasma chamber 104. The impedance of any of the components (eg, RF transmission lines, etc.) coupled to impedance matching circuit 106 match. In an embodiment, the impedance matching circuit is tuned to aid in the matching between the impedance coupled to the source of the impedance matching circuit and the impedance of the load coupled to the impedance matching circuit. Impedance matching between the source and the load reduces the chance of power being reflected from the load to the source.

The plasma chamber 104 includes a lower electrode 120, an upper electrode 122, and other components (not shown), such as a dielectric ring surrounding the upper electrode 122, an electrode extension surrounding the upper dielectric ring, and a lower electrode surrounding the lower electrode. An electrical ring, a dielectric ring surrounding the lower electrode 120, an electrode extension around the lower electrode 120, a plasma exclusion zone (PEZ) ring, a lower PEZ ring, and the like. The upper electrode 122 is disposed opposite the lower electrode 120 and faces the lower electrode 120.

A substrate 124 (eg, a semiconductor wafer) is supported over the upper surface 126 of the lower electrode 120. An integrated circuit (for example, an application specific integrated circuit (ASIC), a programmable logic device (PLD), etc.) is formed on the substrate 124, and the integrated circuit is used in various devices such as a mobile phone, a tablet, and a smart type. Mobile phones, computers, laptops, network devices, and more. The lower electrode 120 is made of metal, such as anodized aluminum, aluminum alloy, or the like. Further, the upper electrode 122 is made of metal such as aluminum, aluminum alloy or the like.

In an embodiment, the upper electrode 122 includes a hole that is coupled to a central gas feed (not shown). The central gas feed receives one or more process gases from a gas supply (not shown). Examples of the process gas include an oxygen-containing gas such as O ₂ . Other examples of the treatment gas include fluorine-containing gases such as tetrafluoromethane (CF ₄ ), sulfur hexafluoride (SF ₆ ), hexafluoroethane (C ₂ F ₆ ), and the like. The upper electrode 122 is grounded. Lower electrode 120 is coupled to one or more RF generators via impedance matching circuit 106. For example, the upper electrode 122 is coupled to the x MHz RF generator via impedance matching circuit 106 and to the y MHz RF power supply via impedance matching circuit 106.

When a process gas is supplied between the upper electrode 122 and the lower electrode 120, and When an RF generator (eg, an x MHz RF generator and/or a y MHz RF generator, etc.) supplies power to the lower electrode 120 via the impedance matching circuit 106, the process gas is excited to generate electricity within the plasma chamber 104. Pulp. For example, a 2 MHz RF generator supplies power via impedance matching circuit 106 to excite the process gas to produce a plasma. In some embodiments, the 2 MHz RF generator is the primary RF generator.

Tool user interface (UI, user interface) on a computer (not shown) 151 (eg, a control circuit, etc.) is used to generate a pulse signal 102, such as a transistor-transistor logic (TTL) signal, a digital pulse signal, a clock signal, a signal with a duty cycle, and the like. In an embodiment, the computer includes a TTL circuit. As used herein, a processor, controller, ASIC, or PLD can be used in place of a computer, and these terms are used interchangeably herein.

Pulse signal 102 includes states S1, S2, and S3. In various embodiments, States S1, S2, and S3 are repeated in the clock cycle. Each clock cycle includes states S1, S2, and S3. For example, states S1 and S2 are executed during one half of the clock cycle, and then state S3 is performed during the remaining half of the clock cycle. As another example, state S1 is performed during a one-third time period of the clock cycle, state S2 is performed during another one-third of the time period, and state S3 is then performed during the remaining one-third of the time period. In some embodiments, the pulse signal 102 includes more or less than three states. An example of state S1 includes a state having a power level of the first range. An example of state S2 includes a state having a power level of the second range. An example of state S3 includes a state having a power level of a third range. In some embodiments, the power level of the second range is higher than the power level of the first range, and the power level of the third range is higher than the power level of the second range. In various embodiments, the power level of the third range is lower than the power level of the second range, and the power level of the second range is lower than the power level of the first range. In an embodiment The power level of the third range is not equal to the power level of the second range, and the power level of the second range is not equal to the power level of the first range.

In some embodiments, a range of power levels includes one or more power levels.

In various embodiments, a clock source (eg, a crystal oscillator, etc.) is used in place of a computer to generate an analog clock signal that is converted to a digital signal similar to pulse signal 102 by an analog digital converter. For example, a crystal oscillator is fabricated to oscillate in an electric field generated by applying a voltage to an electrode near a crystal oscillator or on a crystal oscillator.

In some embodiments, a two-digit clock source (eg, a processor, a computer, etc.) is used to generate the pulse signal 102. The first clock signal of the first digital clock source has states 1 and 0, and the second clock signal of the second digital clock source has states 1 and 0. An adder (e.g., an adder circuit, etc.) is coupled to the two clock sources to add the first and second digit signals to produce a pulse signal 102 having three states.

The pulse signal 102 is passed to a digital signal processor (DSP) 140 of the x MHz RF generator and another DSP 153 of the y MHz RF generator. Each of the DSPs 140 and 153 receives the pulse signal 102 and confirms the states S1, S2, and S3 of the pulse signal 102. For example, DSP 140 recognizes between states S1, S2, and S3. To illustrate the method by which DSP 140 recognizes between states S1, S2, and S3, DSP 140 determines that pulse signal 102 has a first range of power levels during a first time period and a second range of power levels during a second time period. It has a third range of power levels during the third period. The power level of the first range predetermined by the DSP 140 corresponds to the state S1, the power level of the second range corresponds to the state S2, and the power level of the third range corresponds to the state S3.

In some embodiments, the first period is equal to each of the second period and the third period. In various embodiments, the first period is equal to the first period or the second period. In an embodiment, the first period is not equal to each of the first and second periods. In a different embodiment, the first period is not equal to the first period or the second period.

Each of DSPs 140 and 153 stores states S1, S2, and S3 in a memory location of one or more memory devices within the DSP. Examples of memory devices include random access memory (RAM) and read only memory (ROM). The memory device can be a flash memory, a hard disk, Storage devices, computer readable media, and the like.

In various embodiments, the range of power levels and the state of the pulse signal 102 The correspondence between them is stored in the memory device of the DSP. For example, a mapping between the power level of the first range and state S1 is stored in the memory device of DSP 140. As another example, the mapping between the power level of the second range and state S2 is stored in the memory device of DSP 153. As yet another example, a mapping between the power level of the third range and state S3 is stored within DSP 140.

Each of the DSPs 140 and 153 will confirm the status S1, S2, and S3 from the pair The memory locations are provided to corresponding automatic frequency tuners (AFT) 130, 132, 134, 138, 141, and 142, and to corresponding power controllers 144, 146, 148, 150, 152, and 154. For example, DSP 140 indicates to AFT 130 and power controller 144 that pulse signal 102 is in state S1 between times t1 and t2 of the first time period. As another example, DSP 140 indicates to AFT 132 and power controller 146 that pulse signal 102 is in state S2 between times t2 and t3 of the second period. As yet another example, the DSP 140 indicates to the AFT 134 and the power controller 148 that the pulse signal 102 is in state S3 between times t3 and t4 of the third period. As another example, the DSP 153 indicates to the AFT 138 and the power controller 150 that the pulse signal 102 is in state S1 between times t1 and t2 of the first time period. As yet another example, the DSP 153 indicates to the AFT 141 and the power controller 152 that the pulse signal 102 is in state S2 between times t2 and t3 of the second period. As another example, DSP 153 indicates to AFT 142 and power controller 154 that pulse signal 102 is in state S3 between times t3 and t4 of the third period. In some embodiments, the terms "tuner" and "controller" are used interchangeably herein. An example of an AFT is provided in U.S. Patent No. 6,020,794, the entire disclosure of which is incorporated herein by reference.

Each of the AFTs 130, 132, 134, 138, 141, and 142 is based on a pulse letter The state of number 102 determines the frequency level, and each of power controllers 144, 146, 148, 150, 152, and 154 determines the power level based on the state of pulse signal 102. For example, when the state of the pulse signal 102 is S1, the AFT 130 determines to provide the frequency level Fp1 to the power supply 160 of the x MHz RF generator, and when the state of the pulse signal 102 is S1, the power controller 144 determines the power level. The quasi Pp1 is provided to the power source 160. As another example, when the state of the pulse signal 102 is S2, the AFT 132 determines to provide the frequency level Fp2 to the power source 160, and when the pulse signal 102 When the state is S2, the power controller 146 decides to provide the power level Pp2 to the power source 160. As yet another example, when the state of the pulse signal 102 is S3, the AFT 134 determines to provide the frequency level Fp3 to the power supply 160, and when the state of the pulse signal 102 is S3, the power controller 148 determines the power level Pp3. Provided to power source 160.

As another example, when the state of the pulse signal 102 is S1, the AFT 138 determines to provide the frequency level Fs1 to the power supply 162 of the y MHz RF generator, and when the state of the pulse signal 102 is S1, the power controller 150 determines The power level Ps1 is provided to the power source 162. As another example, when the state of the pulse signal 102 is S2, the AFT 141 decides to provide the frequency level Fs2 to the power source 162, and when the state of the pulse signal 102 is S2, the power controller 152 decides to provide the power level Ps2. To power supply 162. As yet another example, when the state of the pulse signal 102 is S3, the AFT 142 determines to provide the frequency level Fs3 to the power source 162, and when the state of the pulse signal 102 is S3, the power controller 154 determines the power level Ps3. Provided to power source 162.

In several embodiments, a bit includes one or more values. For example, the frequency level includes one or more frequency values, and the power level includes one or more power values.

In some embodiments, the frequency levels Fp1, Fp2, and Fp3 are all the same. In various embodiments, at least two of the frequency levels Fp1, Fp2, and Fp3 are not equal. For example, the frequency level Fp1 is not equal to the frequency level Fp2, and the frequency level Fp2 is not equal to the frequency level Fp3. In this example, the frequency level Fp3 is not equal to the frequency level Fp1. As another example, the frequency level Fp1 is not equal to the frequency level Fp2, and the frequency level Fp2 is equal to the frequency level Fp3.

Similarly, in several embodiments, the frequency levels Fs1, Fs2, and Fs3 are the same; or at least two of the frequency levels Fs1, Fs2, and Fs3 are not equal, and the remaining frequency levels are equal; or the frequency level At least two of Fs1, Fs2, and Fs3 are equal, and the remaining frequency levels are not equal.

In various embodiments, the power levels Pp1, Pp2, and Pp3 are all the same. For example, the power level Pp1 is equal to the power level Pp2, and the power level Pp2 is equal to the power level Pp3. In some embodiments, at least two of the power levels Pp1, Pp2, and Pp3 are unequal and the remaining power levels are equal. For example, the power level Pp1 is not equal to the power level Pp2, and the power level Pp2 is equal to the power level Pp3. As yet another example, the power level Pp2 is not equal to the power level Pp3, and the power level Pp3 is equal to the power level Pp1. As another example, the power level Pp1 is equal to the power level Pp2, and the power level Pp2 is not equal to the power level Pp3. In some embodiments, at least two of the power levels Pp1, Pp2, and Pp3 are equal, and the remaining power levels are not equal.

Similarly, in some embodiments, the power levels Ps1, Ps2, and Ps3 are all in phase. with. In various embodiments, at least two of the power levels Ps1, Ps2, and Ps3 are unequal and the remaining power levels are equal. In several embodiments, at least two of the power levels Ps1, Ps2, and Ps3 are equal, and the remaining power levels are not equal.

In an embodiment, the frequency level Fs1 and the power level Ps1 are based on a training Generated by routine work. During the training routine, when the x MHz RF generator changes its RF power signal from a low power level to a high power level, or from a low power level to a high power level, then within the plasma chamber 104 There is an impedance mismatch between one or more parts and the y MHz RF generator. The high power level is higher than the low power level. When the state of the pulse signal 102 supplied to the x MHz RF generator changes from S3 to S1, the x MHz RF generator changes its RF power signal. In this case, when the x MHz RF generator begins to supply power at a high power level or at a low power level, the y MHz RF generator is tuned for its frequency and power. To reduce the impedance mismatch, the y MHz RF generator begins to tune (eg, convert) to a frequency level and a power level. The completion of the convergence can be determined by the DSP 153 based on a standard deviation or another technique. Maintaining the x MHz RF generator at a high power level or low power level for a longer period of time than the normal time period allows the y MHz RF generator to converge more time to the frequency level and the power level quasi. The general time period is the amount of time in which the impedance mismatch does not decrease (eg, cancel). When the y MHz RF generator converges to the frequency level and the power level, the convergence frequency level is stored in the AFT 138 as the frequency level Fs1, and the converged power level is stored in the power controller 150. Internal as the power level Ps1. Similarly, during the training routine, frequency levels Fs2, Fs3, Fp1, Fp2, and Fp3, and power levels Ps2, Ps3, Pp1, Pp2, and Pp3 are generated. The frequency level Fs2 is stored in the AFT 141, the frequency level Fs3 is stored in the AFT 142, the frequency level Fp1 is stored in the AFT 130, the frequency level Fp2 is stored in the AFT 132, and the frequency level Fp3 is stored in the AFT 134. The power level Ps2 is stored in the power controller 152, the power level Ps3 is stored in the power controller 154, the power level Pp1 is stored in the power controller 144, the power level Pp2 is stored in the power controller 146, and the power is stored. The level Pp3 is stored in the power controller 148.

When the state of the pulse signal 102 is S1, the power controller 144 provides power. The level Pp1 is to the power source 160, and the power controller 150 provides the power level Ps1 to the power source 162. During state S1, AFT 130 provides frequency level Fp1 to power supply 160, and AFT 138 provides frequency level Fs1 to power supply 162.

Moreover, in an embodiment, when the state of the pulse signal 102 is S1, the electricity The force controller 146 does not supply the power level Pp2 to the power source 160, and the power controller 148 does not supply the power level Pp3 to the power source 160. Also, in this embodiment, the AFT 132 does not provide the frequency level Fp2 to the power source 160, and the AFT 134 does not provide the frequency level Fp3 to the power source 160. Also, when the state of the pulse signal 102 is S1, the power controller 152 does not supply the power level Ps2 to the power source 162, and the power controller 154 does not supply the power level Ps3 to the power source 162. In addition, the AFT 141 does not provide the frequency level Fs2 to the power source 162, and the AFT 142 does not provide the frequency level Fs3 to the power source 162. In various embodiments, not supplying power levels includes supplying zero power levels.

In some embodiments, the power level of the state is provided during a state To power supply 160, the power level of this state is provided to power supply 162. For example, during state S1, power level Pp1 is provided to power supply 160 while power level Ps1 is provided to power supply 162. Further, in state S1, power level Pp1 is provided to power supply 160 during the same clock edge of pulse signal 102, again during which power level Ps1 is provided to power supply 162.

Similarly, in different embodiments, the frequency of the state during a state The level is provided to power source 160 while the frequency level of the state is provided to power source 162. For example, during state S1, frequency level Fp1 is provided to power supply 160 while frequency level Fs1 is provided to power supply 162. Further, in state S1, frequency level Fp1 is provided to power supply 160 during the same clock edge of pulse signal 102, again during which frequency level Fs1 is provided to power supply 162.

In some embodiments, during a state, the power level of the state and the The frequency level of the state is provided to the power source 160 while the power level of the state and the frequency level of the state are provided to the power source 162. For example, during the state S3, the frequency level Fp3 and the power level Pp3 are simultaneously supplied to the power source 160 while the frequency level Fs3 and the power level Ps3 are supplied to the power source 162. Further, in the state S1, the frequency level Fp3 and the power level Pp3 are supplied to the power source 160 during the same clock edge of the pulse signal 102, and the frequency level Fs3 and the power level Ps3 are also supplied to the power source during this period. 162.

In several embodiments, the power of the x MHz RF generator during a state The force controller provides a power level to the power supply 160 of the x MHz RF generator and provides a power level to the power supply 162 of the y MHz RF generator by the power controller of the y MHz RF generator almost simultaneously. For example, during state S1, power level Pp1 is provided to power supply 160 and power level Ps1 is provided to power supply 162 at approximately the same time. Further, in state S1, power level Pp1 is provided to power supply 160 in one of a second (eg, microseconds, milliseconds, nanoseconds, etc.) before or after the occurrence of the clock edge of pulse signal 102. In this example, power level Ps1 is provided to power supply 162 during the occurrence of the clock edge.

As such, in some embodiments, during a state, produced by x MHz RF The AFT of the generator provides a frequency level to the power supply 160 of the x MHz RF generator and provides a frequency level to the power supply 162 of the y MHz RF generator by the AFT of the y MHz RF generator almost simultaneously. For example, during state S2, frequency level Fp2 is provided to power supply 160 and frequency level Fs2 is provided to power supply 162 at approximately the same time. Further, in state S2, frequency level Fp2 is provided to power supply 160 in one of one second before or after the occurrence of the clock edge of pulse signal 102. In this example, power level Fs2 is provided to power supply 162 during the appearance of the clock edge.

Similarly, in different embodiments, during a state, produced by x MHz RF The tuner of the generator provides a frequency level to the power supply 160 of the x MHz RF generator, and a power level controller of the x MHz RF generator provides a power level to the power supply 160 of the x MHz RF generator, and Almost simultaneously, the y MHz RF generator's tuner provides a frequency level to the y MHz RF generator's power supply 162, and the y MHz RF generator's power controller provides a power level to the y MHz RF generation. Power supply 162. For example, during state S3, frequency level Fp3 and power level Pp3 are provided to power supply 160, and frequency level Fs3 and power level Ps3 are provided to power supply 162 at approximately the same time. Further, in state S3, frequency level Fp3 and power level Pp3 are provided to power supply 160 in one of one second before or after the occurrence of the clock edge of pulse signal 102. In this example, power level Ps3 and frequency level Fs3 are provided to power supply 162 during the occurrence of the clock edge.

During state S1, power supply 160 receives frequency level Fp1 and power level. Pp1. After receiving the levels Fp1 and Pp1, the power supply 160 generates RF power at the frequency level Fp1. Force, and the RF power has a power level Pp1. Further, during the state S1, the power source 162 receives the frequency level Fs1 and the power level Ps1. After receiving the levels Fs1 and Ps1, the power supply 162 of the y MHz RF generator generates an RF signal having a frequency level Fs1 and a power level Ps1.

Moreover, in an embodiment, when the state of the pulse signal 102 is S2, the electricity The force controller 144 does not supply the power level Pp1 to the power source 160, and the power controller 148 does not supply the power level Pp3 to the power source 160. Also, in this embodiment, the AFT 130 does not provide the frequency level Fp1 to the power source 160, and the AFT 134 does not provide the frequency level Fp3 to the power source 160. Also, when the state of the pulse signal 102 is S2, the power controller 150 does not supply the power level Ps1 to the power source 162, and the power controller 154 does not supply the power level Ps3 to the power source 162. Moreover, during state S2 of pulse signal 102, AFT 138 does not provide frequency level Fs1 to power supply 162, and AFT 142 does not provide frequency level Fs3 to power supply 162.

In addition, during state S2, power supply 160 receives frequency level Fp2 and power. Level Pp2. After receiving the levels Fp2 and Pp2, the power source 160 generates RF power at the frequency level Fp2, and the RF power has a power level Pp2. Further, during the state S2, the power source 162 receives the frequency level Fs2 and the power level Ps2. After receiving the levels Fs2 and Ps2, the power supply 162 of the y MHz RF generator generates an RF signal having a frequency level Fs2 and a power level Ps2.

Also, in an embodiment, when the state of the pulse signal 102 is S3, the power The controller 144 does not supply the power level Pp1 to the power source 160, and the power controller 146 does not supply the power level Pp2 to the power source 160. Also, in this embodiment, the AFT 130 does not provide the frequency level Fp1 to the power source 160, and the AFT 132 does not provide the frequency level Fp2 to the power source 160. Also, when the state of the pulse signal 102 is S3, the power controller 150 does not supply the power level Ps1 to the power source 162, and the power controller 152 does not supply the power level Ps2 power source 162. In addition, the AFT 138 does not provide the frequency level Fs1 to the power source 162, and the AFT 141 does not provide the frequency level Fs2 to the power source 162.

In addition, during state S3, power supply 160 receives frequency level Fp3 and power. Level Pp3. After receiving the levels Fp3 and Pp3, the power supply 160 generates an RF signal having a frequency level Fp3 and an RF power level Pp3. Further, during the state S3, the power source 162 receives the frequency level Fs3 and the power level Ps3. After receiving the levels Fs3 and Ps3, the power supply 162 of the y MHz RF generator generates an RF signal having a frequency level Fs3 and a power level Ps3.

In an embodiment, during a state, no power bits are provided for the remaining states. The power source 160 is connected to the power source 162 at the same time as the power level is not provided for the remaining states. For example, in state S1, during the same edge of pulse signal 102, power controller 146 does not provide a power level to power source 160, as power controller 152 does not provide a power level to power source 162. As another example, in state S2, during the same edge of pulse signal 102, power controllers 144 and 148 do not provide power levels to power source 160, as power controllers 150 and 154 do not provide power levels to power source 162. As yet another example, in state S3, during the same edge of pulse signal 102, power controllers 144 and 146 do not provide power levels to power source 160, as power controllers 150 and 152 do not provide power levels to power source 162. .

In some embodiments, no frequency is provided for the remaining states during a state The leveling to the power supply 160 is performed concurrently with the supply of the frequency level to the power supply 162 for the remaining states. For example, in state S1, during the same edge of pulse signal 102, AFT 132 does not provide a frequency level to power supply 160, as AFT 141 does not provide a frequency level to power supply 162. As another example, in state S2, during the same edge of pulse signal 102, AFTs 130 and 134 do not provide a frequency level to power supply 160, as AFT 138 and 142 do not provide a frequency level to power supply 162. As yet another example, in state S3, during the same edge of pulse signal 102, AFTs 130 and 132 do not provide a frequency level to power supply 160, as AFT 138 and 141 do not provide a frequency level to power supply 162.

In several embodiments, no frequency is provided for the remaining states during a state And the power level to the power supply 160 is performed concurrently with the frequency and power levels to the power supply 162 for the remaining states. For example, in state S1, during the same edge of pulse signal 102, AFT 132 does not provide a frequency level to power supply 160, and power controller 146 does not provide a power level to power supply 160, as AFT 141 does not provide a frequency level to Power source 162, and power controller 152 do not provide power levels to power source 162.

In some embodiments, no power is provided for the remaining states during a state The leveling to the power supply 160 is performed at substantially the same time as the power level is not provided to the remaining states to the power supply 162. In various embodiments, during a state, no frequency level is provided for the remaining states to the power supply 160 and no frequency level is provided for the remaining states to the power supply 162 for substantially the same time. In several embodiments, during a state, no frequency and power levels are provided for the remaining states to the power supply 160, and no frequency and power levels are provided for the remaining states to the power supply 162. Execute at a time.

In some embodiments, the power source (eg, RF power source, etc.) includes coupling to The drive of the big device. The driver generates an RF signal. The amplifier amplifies the RF signal and supplies the forward power of the RF signal to the plasma chamber 104 via the RF cable, impedance matching circuit 106, and RF transmission line 184. For example, during state S1, the amplifier of power supply 160 will have forward power (having a power level proportional to power level Pp1 (eg, the same, multiple, etc.) and having frequency level Fp1) via RF cable 180, impedance The matching circuit 106 and the RF transmission line 184 are supplied to the plasma chamber 104. In this example, during state S1, the amplifier of power supply 162 will pass forward power (having a power level proportional to power level Ps1 and having frequency level Fs1) via RF cable 182, impedance matching circuit 106, and The RF transmission line 184 is supplied to the plasma chamber 104.

As another example, during state S2, the amplifier of power supply 160 will have positive work. Rate (having a power level proportional to power level Pp2 (eg, the same, multiple, etc.) and having frequency level Fp2) is supplied to the plasma chamber via RF cable 180, impedance matching circuit 106, and RF transmission line 184 104. In this example, during state S2, the amplifier of power supply 162 will have forward power (having a power level proportional to power level Ps2 and having frequency level Fs2) via RF cable 182, impedance matching circuit 106, and The RF transmission line 184 is supplied to the plasma chamber 104. As yet another example, during state S3, the amplifier of power supply 160 will have forward power (having a power level proportional to power level Pp3 (eg, the same, multiple, etc.) and having a frequency level Fp3) via RF Cable 180, impedance matching circuit 106, and RF transmission line 184 are supplied to plasma chamber 104. In this example, during state S3, the amplifier of power supply 162 will have forward power (having a power level proportional to power level Ps3 and having frequency level Fs3) via RF cable 182, impedance matching circuit 106, and The RF transmission line 184 is supplied to the plasma chamber 104.

In one embodiment, during each of states S1, S2, and S3, x MHz RF The sensor 210 of the generator senses the reflected power, which is the RF power reflected from the plasma of the plasma chamber 104 on the RF cable 180. Moreover, during each of the states S1, S2, and S3, the sensor 210 senses the forward power on the RF cable 180 as the forward power is transferred from the x MHz RF generator to the plasma chamber 104 via the RF cable 180. . Similarly, during each of states S1, S2, and S3, the sensor 212 of the y MHz RF generator senses the power reflected from the plasma of the plasma chamber 104. The reflected power sensed by the sensor 212 is reflected from the plasma of the plasma chamber 104. On the RF cable 182. Moreover, during each of states S1, S2, and S3, sensor 212 senses forward power on RF cable 182 as forward power is transferred from y MHz RF generator to plasma chamber 104 via RF cable 182. .

An analog analog converter (ADC) 221 for x MHz RF generators The reflected power signal and the forward power signal sensed by 210 are converted from an analog form to a digital form, and the ADC 223 of the y MHz RF generator converts the reflected power signal and the forward power signal sensed by the sensor 212 from an analog form to an analog form. Digital formation. During each of the states S1, S2, and S3, the DSP 140 receives the digital value (eg, amplitude, phase, or a combination thereof, etc.) of the reflected power signal sensed by the sensor 210 and the digital value of the forward power signal, and the DSP 153 The digital value of the reflected power signal sensed by the sensor 212 and the digital value of the forward power signal are received.

In some embodiments, the digit value of the power signal is the voltage of the power signal, The current of the signal, or a combination of voltage and current. In various embodiments, the digital value of the signal includes the amplitude of the signal and the phase of the signal.

During one or all of states S1, S2, and S3, DSP 140 is RF The value of the forward and reflected power signals on the cable 180 calculates a parameter value (eg, the ratio of the digital reflected power signal and the digital forward power signal, or the voltage standing wave ratio (VSWR), or the gamma value). (gamma value), or impedance change, etc.). In some embodiments, a gamma value of 1 indicates a height mismatch between the source and the impedance of the load, and a gamma value of 0 indicates a low degree mismatch between the source and the impedance of the load. Similarly, DSP 153 calculates the parameter values from the digital values of the forward and reflected power signals on RF cable 182. In various embodiments, the VSWR is calculated to be equal to the ratio of RC-1 and RC+1, where RC is the reflection coefficient.

In some embodiments, the RF generator sensor is a voltage and current probe The detector measures a complex current and a complex voltage that are transmitted between the RF generator and the impedance matching circuit 106 via an RF cable. For example, sensor 210 is a voltage and current detector that measures the complex voltage and complex current that it transmits between the x MHz RF generator and impedance matching circuit 106 via RF cable 180. As another example, sensor 212 is a voltage and current detector that measures the complex voltage and complex current transmitted between y MHz RF generator and impedance matching circuit 106 via RF cable 182. In these embodiments, the parameter values measured by the sensor include impedance of the plasma, or impedance change of the plasma. The impedance of the plasma is determined by the sensor, such as the ratio of the complex voltage to the complex current. The impedance change is determined by the difference in time between the two plasma impedances. In some embodiments, the parameter values are determined by the RF generator's AFT, power controller, or DSP.

The parameter value of a state is transmitted to the RF generator by the DSP of the RF generator The AFT associated with this state. For example, the parameter values obtained during state S1 are transmitted by DSP 140 to AFT 130, and the parameter values obtained during state S1 are transmitted by DSP 153 to AFT 138. As another example, the parameter values obtained during state S2 are transmitted by DSP 140 to AFT 132, and the parameter values obtained during state S2 are transmitted by DSP 153 to AFT 141. As yet another example, the parameter values obtained during state S3 are transmitted by DSP 140 to AFT 134, and the parameter values obtained during state S3 are transmitted by DSP 153 to AFT 142.

During a state, the AFT of the RF generator is connected to the DSP of the RF generator. A parameter value is received, and during this state, the AFT determines a frequency level associated with the received parameter value. For example, during state S1, AFT 130 determines a frequency level associated with the parameter value received from DSP 140 during state S1, and AFT 138 determines a frequency based on the parameter value received from DSP 153 during state S1. Level. As another example, during state S2, AFT 132 determines a frequency level corresponding to the parameter value received from DSP 140 during state S2, and AFT 141 determines a value based on the parameter value received from DSP 153 during state S2. Frequency level. As yet another example, during state S3, AFT 134 determines a frequency level associated with the parameter value received from DSP 140 during state S3, and AFT 142 determines based on the parameter value received from DSP 153 during state S3. A frequency level.

It should be noted that there is a correlation between the parameter value and the frequency level (eg correspondence, Maps, links, etc.) are scheduled and stored in the AFT. As such, in some embodiments, the correlation between the parameter value and the power level is predetermined and stored within the power controller.

In addition, during a state, the AFT of the RF generator is based on the parameters from that state. The frequency level generated by the value adjusts the frequency level and provides the adjusted frequency level to the RF generator. For example, during state S1, AFT 130 adjusts frequency level Fp1 based on the frequency level associated with the parameter value generated by DSP 140 for state S1 and provides the adjusted frequency level to power source 160. Also, in this example, during state S1, AFT 138 The frequency level Fs1 is adjusted based on the frequency level corresponding to the parameter value generated by the DSP 153 for the state S1, and the adjusted frequency level is provided to the power source 162. As another example, during state S2, AFT 132 adjusts frequency level Fp2 based on the frequency level associated with the parameter value generated by DSP 140 for state S2 and provides the adjusted frequency level to power source 160. Moreover, in this example, during state S2, AFT 141 adjusts frequency level Fs2 based on the frequency level corresponding to the parameter value generated by DSP 153 for state S2, and provides the adjusted frequency level to power source 162. . As yet another example, during state S3, AFT 134 adjusts frequency level Fp3 based on the frequency level associated with the parameter value generated by DSP 140 for state S3 and provides the adjusted frequency level to power source 160. Moreover, in this example, during state S3, AFT 142 adjusts frequency level Fs3 based on the frequency level corresponding to the parameter value generated by DSP 153 for state S3, and provides the adjusted frequency level to power source 162. .

In addition, during a state, the power controller of the RF generator is based on self-RF The value of the parameter received by the generator's DSP determines the power level. For example, during state S1, power controller 144 determines the power level based on the parameter values received from DSP 140, and power controller 150 determines the power level based on the parameter values received from DSP 153. As another example, during state S2, power controller 146 determines the power level based on the parameter values received from DSP 140, and power controller 152 determines the power level based on the parameter values received from DSP 153. As yet another example, during state S3, power controller 148 determines the power level based on the parameter values received from DSP 140, and power controller 154 determines the power level based on the parameter values received from DSP 153.

In addition, during a state, the power controller of the RF generator is based on one The power level generated by the parameter value adjusts the power level of the RF generator's power supply and provides the adjusted power level to the power supply. For example, during state S1, power controller 144 adjusts power level Pp1 based on the power level generated from a parameter value for state S1 and provides the adjusted power level to power source 160. In this example, during state S1, power controller 150 adjusts power level Ps1 based on the power level generated from a parameter value for state S1 and provides the adjusted power level to power source 162. As another example, during state S2, power controller 146 adjusts power level Pp2 based on the power level generated from a parameter value for state S2 and provides the adjusted power level to power source 160. In this example, during state S2, The power controller 152 adjusts the power level Ps2 based on the power level generated from a parameter value for state S2 and provides the adjusted power level to the power source 162. As yet another example, during state S3, power controller 148 adjusts power level Pp3 based on the power level generated from a parameter value for state S3 and provides the adjusted power level to power source 160. In this example, during state S3, power controller 154 adjusts power level Ps3 based on the power level generated from a parameter value for state S3 and provides the adjusted power level to power source 162.

During a state, the power of the RF generator generates a power RF signal, which The power RF signal has a frequency level adjusted for the state received by the AFT of the RF generator, and a power level adjusted for the state received by the power controller of the RF generator, and the power is adjusted Signals are supplied to the plasma chamber 104 via corresponding RF cables, impedance matching circuits 106, and RF transmission lines 184. For example, during state S1, power supply 160 generates a power signal having an adjusted frequency level received from AFT 130 and having an adjusted power level received from power controller 144, and This power signal is supplied to the plasma chamber 104 via the RF cable 180, the impedance matching circuit 106, and the RF transmission line 184. Similarly, in this example, during state S1, power supply 162 generates a power signal having an adjusted frequency level received from AFT 138 and having adjusted power levels received from power controller 150. The power signal is supplied to the plasma chamber 104 via the RF cable 182, the impedance matching circuit 106, and the RF transmission line 184.

As another example, during state S2, power source 160 generates a power signal, The power signal has an adjusted frequency level received from the AFT 132 and an adjusted power level received from the power controller 146, and the power signal is passed through the RF cable 180, the impedance matching circuit 106, and the RF transmission line. 184 is supplied to the plasma chamber 104. Similarly, in this example, during state S2, power supply 162 generates a power signal having an adjusted frequency level received from AFT 141 and having adjusted power levels received from power controller 152. The power signal is supplied to the plasma chamber 104 via the RF cable 182, the impedance matching circuit 106, and the RF transmission line 184.

As yet another example, during state S3, power source 160 generates a power signal, The power signal has an adjusted frequency level received from the AFT 134 and has an adjusted power level received from the power controller 148, and the power signal is continued through the RF power. The anti-matching circuit 106, and the RF transmission line 184 are supplied to the plasma chamber 104. Similarly, in this example, during state S3, power supply 162 generates a power signal having an adjusted frequency level received from AFT 142 and having adjusted power levels received from power controller 154. The power signal is supplied to the plasma chamber 104 via the RF cable 182, the impedance matching circuit 106, and the RF transmission line 184.

In an embodiment, a single controller is used in place of the power controller 144 and the AFT. 130. A single controller is used in place of power controller 146 and AFT 132, and a single controller is used in place of power controller 148 and AFT 134. In some embodiments, a single controller is used in place of power controller 150 and AFT 138, a single controller is used in place of power controller 152 and AFT 141, and a single controller is used in place of power controller 154 and AFT 142.

In some embodiments, in addition to the x and y MHz RF generators in system 100 In addition, a z MHz RF generator is used. When the x MHz RF generator is a 2 MHz RF generator and the y MHz RF generator is a 27 MHz RF generator, the z MHz RF generator can be a 60 MHz RF generator. The zMHz RF generator has a similar structure to an x or y MHz RF generator and has a similar connection to the components of the system 100 external to the x or y MHz RF generator and x or y MHz RF generator. For example, the zMHz RF generator includes a three power controller, a three AFT, a DSP, an ADC, a sensor, and a power supply. As another example, the DSP of the zMHz RF generator is coupled to the tool UI 151 to receive the pulse signal 102. As another example, the power to the z MHz RF generator is coupled to the lower electrode 120 of the plasma chamber 104 via an RF cable (not shown), an impedance matching circuit 106, and an RF transmission line 184.

It should be noted that the embodiments described herein are described using three states. but In some embodiments, more than three states can be used.

2 is an embodiment showing a chart 190 of states S1, S2, and S3. Graph 190 depicts power vs. time t. Each of the states S1, S2, or S3 is associated with a logic level. For example, state S1 has a high logic level, state S2 has a medium logic level, and state S3 has a low logic level. The high logic level "c" has a higher power level than the medium logic level "b", and the medium logic level "b" has a higher power level than the low logic level "a". As an example, state S1 has a low, medium, or high logic level. As an example, state S2 has a low, medium, or high logic level. As an example, state S3 has a low, medium, or high logic level. In some embodiments, the state S1, S2, and S3 represent a stepwise function.

Each of the states S1, S2, or S3 continues for an equal period. For example, state S1 The period T1 that occurs is the same as the period T2 in which the state S2 occurs or the period T3 in which the state S3 appears. In some embodiments, one state continues for unequal time compared to one or more of the remaining states. For example, state S1 and state S2 continue for different periods, and state S2 and state S3 continue for different periods. In this example, the period of state S3 may be the same as or different from the period of state S1. As another example, state S1 continues for a longer period than state S2, while state S2 continues for a shorter period than state S3.

3 is a line diagram of an embodiment of a chart 201 showing different states At different times. Graph 201 illustrates power versus time. The states S1 and S2 appear for the same period, and the period in which the state S3 occurs is different from the period of the state S2 or S3. For example, the state S1 occurs for a period t1, the state S2 for a period t2, and the state S3 for a period t3. The period t3 is longer than the period t1 or t2.

In some embodiments, any of the states S1, S2, and S3 appear to reach phase At the same time, and the rest of the state appears for different periods. For example, the occurrence of state S1 is the same as the occurrence of state S3, and the period in which state S1 occurs is different from the period in which state S2 occurs. As another example, the occurrence of state S2 is the same as the occurrence of state S3, while the period in which state S2 occurs is different from the period in which state S1 occurs.

4 is a schematic diagram of an embodiment of system 210 with system 210 during production One of the AFTs 220, 222, or 224 is selected in the state of the pulse signal 102. System 210 includes selection logic 226, AFTs 220, 222, and 224, digital clock source 228, plasma chamber 104, impedance matching circuit 106, and power supply 232.

Selection logic 226, AFT 220, 222, and 224, and power supply 232 implementation Within the x MHz RF generator or y MHz RF generator. When AFTs 220, 222, and 224 are implemented within an x MHz RF generator, then AFT 220 is an example of AFT 130, AFT 222 is an example of AFT 132, AFT 224 is an example of AFT 134, and power supply 232 is power supply 160. Example (Figure 1). Similarly, when AFTs 220, 222, and 224 are implemented within a y MHz RF generator, then AFT 220 is an example of AFT 138, AFT 222 is an example of AFT 141, AFT 224 is an example of AFT 142, and power supply 232 An example of a power supply 162 (Figure 1).

Examples of selection logic 226 include multiplexers. When the selection logic 226 includes multiplexing The pulse signal 102 is received at the select input of the multiplexer.

In various embodiments, selection logic 226 includes a processor. In an embodiment, selection logic 226 is implemented within DSP 140 or DSP 153.

The digital clock source 228 is used to operate the power source 232 to synchronize the power source 232 with the digital clock signal generated by the digital clock source 228. In some embodiments, the digital clock signal is synchronized with the pulse signal 102. For example, the digital clock signal has the same phase as the pulse signal 102. As another example, the phase of the digital clock signal is within a predetermined phase range of the phase of the pulse signal 102. To account for the application of the predetermined phase range, the leading edge of the digital clock signal of clock source 228 is part of one second after or before the leading edge of pulse signal 102.

In one embodiment, pulse signal 102 is provided to power source 232 in place of the digital clock signal from clock source 228.

Selection logic 226 selects AFT 220 when pulse signal 102 is in state S1. Likewise, selection logic 226 selects AFT 222 when pulse signal 102 is in state S2, and selection logic 226 selects AFT 224 when pulse signal 102 is in state S3. When the AFT 220 is selected, the AFT 220 provides a frequency level Fp1 to the power source 232. Similarly, when the AFT 222 is selected, the AFT 222 provides the frequency level Fp2 to the power source 232, and when the AFT 224 is selected, the AFT 224 provides the frequency level Fp3 to the power source 232.

In embodiments where AFTs 220, 222, and 224 are disposed within a y MHz RF generator, AFT 220 provides frequency level Fs1 to power source 232 when AFT 220 is selected. Similarly, in these embodiments, when the AFT 222 is selected, the AFT 222 provides the frequency level Fs2 to the power source 232, and when the AFT 224 is selected, the AFT 224 provides the frequency level Fs3 to the power source 232.

In some embodiments, selection logic 226 makes a selection between power controllers instead of AFTs 220, 222, and 224. For example, selection logic 226 is coupled to power controllers 144, 146, and 148 (FIG. 1) of the x MHz RF generator. In this example, when pulse signal 102 is in state S1, selection logic 226 selects power controller 144; when pulse signal 102 is in state S2, selection logic 226 selects power controller 146; and when pulse signal 102 is in state S3 The selection logic 226 selects the power controller 148. As another example, selection logic 226 is coupled to power controllers 150, 152, and 154 (FIG. 1) of the y MHz RF generator. In this example, when pulse signal 102 is in state S1, selection logic 226 selects power controller 150; When the rush signal 102 is in state S2, the selection logic 226 selects the power controller 152; and when the pulse signal 102 is in state S3, the selection logic 226 selects the power controller 154.

In various embodiments, the x MHz RF generator is selected during state S1 At power controller 144, power controller 144 provides power level Pp1 to power source 232; and when power controller 146 of the x MHz RF generator is selected during state S2, power controller 146 provides power level Pp2 to power source 232. Additionally, power controller 148 provides power level Pp3 to power source 232 when power controller 148 of the x MHz RF generator is selected during state S3.

As such, in some embodiments, y MHz RF is selected during state S1 When the power controller 150 of the generator is generated, the power controller 150 provides the power level Ps1 to the power source 232; and when the power controller 152 of the y MHz RF generator is selected during the state S2, the power controller 152 provides the power level Ps2 to Power supply 232. Furthermore, when the power controller 154 of the y MHz RF generator is selected during state S3, the power controller 154 provides a power level Ps3 to the power source 232.

In some embodiments, selection logic 226 is implemented in a z MHz RF generator Within, and operate in a similar manner as described herein. For example, selection logic 226 selects between the AFTs of the z MHz RF generators or between the power controllers of the z MHz RF generators based on the state of the pulse signal 102.

5 is a schematic diagram of an embodiment of system 200 for use with system 200 during production To control the frequency and/or power of the RF signal, the RF signal is generated by the y MHz RF generator based on the state of the pulse signal 102 and the impedance change of the plasma within the plasma chamber 104. The DSP 153 of the y MHz RF generator receives the pulse signal 102 from the tool UI 151.

When pulse signal 102 transitions from state S3 to state S1, and when x MHz When the RF generator supplies forward power having a power level Pp1 and having a frequency level Fp1 to the plasma chamber 104, the impedance of the plasma within the plasma chamber 104 changes. When the impedance of the plasma within the plasma chamber 104 changes as the pulse signal 102 transitions from state S3 to state S1, the sensor 212 measures the complex voltage and complex current being transmitted via the RF cable 182. The sensor 212 provides a measure of the complex voltage and the complex current to the ADC converter 223, which converts the measurement from an analog format to a digital format. The digital values of the complex voltage and the complex current are provided to the DSP 153.

It should be further noted that in an embodiment, the DSP 153 does not receive the pulse signal 102. Conversely, in this embodiment, the DSP 153 receives another digital pulse signal that may not be synchronized with the pulse signal 102. In one embodiment, the other digital pulse signals received by the DSP 153 are synchronized with the pulse signal 102.

During state S1 of pulse signal 102 (eg, immediately following pulse signal 102) After transitioning from state S3 to state S1, etc.), DSP 153 calculates a first parameter value from the complex voltage and current measured during state S1, such as the square root of the ratio of the digital reflected power signal to the digital forward power signal, Gamma value, voltage standing wave ratio (VSWR), impedance variation, etc.

The DSP 153 determines whether the first parameter value is greater than or equal to the first threshold. when When the DSP 153 determines that the first parameter value is greater than or equal to the first threshold, the DSP 153 indicates the above to the AFT 138 and the power controller 150. The AFT 138 determines a frequency level Fs1 corresponding to a first parameter value that is at least equal to the first threshold value and provides the frequency level Fs1 to the power source 162. Further, the power controller 150 determines a power level Ps1 corresponding to a first parameter value that is at least equal to the first threshold value, and provides a power level Ps1 to the power source 162. For example, the AFT 138 stores a table in a memory device that maps a first parameter value (having a value at least equal to the first threshold) to a frequency level Fs1, and the power controller 150 sets the power level Ps1. The mapping between the first parameter value (the value of which is at least equal to the first threshold) is stored in the memory device.

On the other hand, when the DSP 153 determines that the first parameter value is less than the first critical value The DSP 153 instructs the above to the AFT 142 and the power controller 154. The AFT 142 determines a frequency level Fs3 corresponding to the first parameter value (which is less than the first threshold) and provides the frequency level Fs3 to the power source 162. Further, the power controller 154 determines a power level Ps3 corresponding to the first parameter value (which is less than the first threshold) and provides the power level Ps3 to the power source 162. For example, AFT 142 stores a table in a memory device that maps a first parameter value (whose value is less than the first threshold) to frequency level Fs3, and power controller 154 compares power level Ps3 with The mapping between the first parameter value (whose value is less than the first threshold) is stored in the memory device.

After receiving frequency levels (eg, frequency levels Fs1, Fs3, etc.) and power levels (eg, Ps1, Ps3, etc.), power source 162 generates an RF signal having the frequency level and the power level, and The RF signal is supplied to the plasma chamber 104 via an RF cable 182, an impedance matching circuit 106, and an RF transmission line 184. For example, the amplifier of power supply 162 will forward power via RF cable 182, impedance matching circuit 106, and RF transmission line 184 are supplied to plasma chamber 104, which has a power level proportional to power level Ps1 (eg, the same, multiple, etc.) and has frequency bits Quasi Fs1.

When pulse signal 102 transitions from state S1 to state S2, and when x MHz When the RF generator supplies forward power having a power level Pp2 and having a frequency level Fp2 to the plasma chamber 104, the impedance of the plasma within the plasma chamber 104 changes. When the impedance of the plasma within the plasma chamber 104 changes as the pulse signal 102 transitions from state S1 to state S2, the sensor 212 measures the complex voltage and complex current being transmitted via the RF cable 182. The sensor 212 provides a measure of the complex voltage and the complex current to the ADC converter 223, which converts the measurement from an analog format to a digital format. The digital values of the complex voltage and the complex current are provided to the DSP 153.

In addition, during the state S2 of the pulse signal 102 (eg, immediately following the pulse signal) After the number 102 transitions from state S1 to state S2, etc., the DSP 153 calculates a second parameter value from the complex voltage and current measured during state S2, such as the ratio of the digital reflected power signal to the digital forward power signal. Square root, gamma value, voltage standing wave ratio (VSWR), impedance variation, etc.

The DSP 153 determines whether the second parameter value is greater than the second threshold. When DSP 153 When it is determined that the second parameter value is greater than or equal to the second threshold value, the DSP 153 indicates the above situation to the AFT 141 and the power controller 152. The AFT 141 determines a frequency level Fs2 corresponding to a second parameter value that is at least equal to the second threshold value and provides this frequency level Fs2 to the power source 162. Further, the power controller 152 determines a power level Ps2 corresponding to a second parameter value that is at least equal to the second threshold value, and provides the power level Ps2 to the power source 162. For example, the AFT 141 stores a table in a memory device that maps a second parameter value (having a value at least equal to a second threshold) to a frequency level Fs2, and the power controller 152 sets the power level Ps2. The mapping between the second parameter value (the value of which is at least equal to the second threshold) is stored in the memory device.

On the other hand, when the DSP 153 determines that the second parameter value is less than the second threshold The DSP 153 instructs the above to the AFT 138 and the power controller 150. The AFT 138 determines a frequency level Fs1 corresponding to a second parameter value that is less than the second threshold value and provides this frequency level Fs1 to the power source 162. In addition, the power controller 150 determines to correspond to the second parameter value (which is less than The second threshold value is the power level Ps1 and the power level Ps1 is supplied to the power source 162. For example, AFT 138 stores a table in a memory device that maps a second parameter value (whose value is less than a second threshold) to frequency level Fs1, and power controller 150 compares power level Ps1 with The mapping between the second parameter value (whose value is less than the second threshold) is stored in the memory device.

When pulse signal 102 transitions from state S2 to state S3, and when x MHz When the RF generator supplies forward power having a power level Pp3 and having a frequency level Fp3 to the plasma chamber 104, the impedance of the plasma within the plasma chamber 104 changes. When the impedance of the plasma within the plasma chamber 104 changes as the pulse signal 102 transitions from state S2 to state S3, the sensor 212 measures the complex voltage and complex current being transmitted via the RF cable 182. The sensor 212 provides a measure of the complex voltage and the complex current to the ADC converter 223, which converts the measurement from an analog format to a digital format. The digital values of the complex voltage and the complex current are provided to the DSP 153.

In addition, during the state S3 of the pulse signal 102 (eg, immediately following the pulse letter) After the number 102 transitions from state S2 to state S3, etc., the DSP 153 calculates a third parameter value from the complex voltage and current measured during state S3, such as the square root of the ratio of the digital reflected power signal to the digital forward power signal. , gamma value, voltage standing wave ratio (VSWR), impedance variation, etc.

The DSP 153 determines whether the third parameter value is greater than the third threshold. When DSP 153 When it is determined that the third parameter value is greater than or equal to the third threshold value, the DSP 153 indicates the above situation to the AFT 142 and the power controller 154. The AFT 142 determines a frequency level Fs3 corresponding to a third parameter value that is at least equal to the third threshold value and provides this frequency level Fs3 to the power source 162. Further, the power controller 154 determines a power level Ps3 corresponding to a third parameter value that is at least equal to the third threshold value, and provides the power level Ps3 to the power source 162. For example, the AFT 142 stores a table in a memory device that maps a third parameter value (having a value at least equal to a third threshold) to the frequency level Fs3, and the power controller 154 sets the power level Ps3. The mapping between the third parameter value (the value of which is at least equal to the third threshold) is stored in the memory device.

On the other hand, when the DSP 153 determines that the third parameter value is less than the third threshold, the DSP 153 instructs the above to the AFT 141 and the power controller 152. The AFT 141 determines a frequency level Fs2 corresponding to a third parameter value (which is less than the third threshold) and provides the frequency bit Quasi Fs2 to power supply 162. Further, the power controller 152 determines the power level Ps2 corresponding to the third parameter value (which is less than the third threshold) and provides this power level Ps2 to the power source 162. For example, AFT 141 stores a table in a memory device that maps a third parameter value (whose value is less than a third threshold) to frequency level Fs2, and power controller 152 compares power level Ps2 with The mapping between the third parameter value (whose value is less than the third threshold) is stored in the memory device.

Using parameter values to modify the RF power provided by power source 162 results in a stable plasma Qualitative. Also, plasma stability is based on an instantaneous measurement of complex voltages and currents. This instant measurement provides the accuracy to stabilize the plasma.

Use z MHz RF in addition to the x and y MHz RF generators In an embodiment of the generator, a z MHz RF generator is coupled to the tool UI 151 and the pulse signal 102 is transmitted by the tool UI 151 to the z MHz RF generator. The z MHz RF generator operates in a manner similar to a y MHz RF generator. For example, during one of the states of the pulse signal 102, it is determined whether the parameter value exceeds a threshold. Based on the determination of the parameter values, the first or second level of power, and the first or second level of frequency are provided to the power supply of the z MHz RF generator.

In an embodiment, the first threshold, the second threshold, and the third threshold are Produced during training routines (eg, learning steps). During the training routine, one or more portions of the plasma chamber 104 (eg, plasma) when the x MHz RF generator changes its RF power signal from a first power level to a second power level Etc.) There is an impedance mismatch between the z MHz RF generator. When the state of the pulse signal 102 changes from S3 to S1, the x MHz RF generator changes the level of its RF power signal from the first power level to the second power level. In this case, the y MHz RF generator tunes its frequency and power when the x MHz RF generator begins to supply power at the power level Pp1. To reduce impedance mismatch, the y MHz RF generator begins to tune (eg, converge) to a power level and a frequency level. Convergence can be determined by the DSP 153 based on standard deviation or another technique. In order for the y MHz RF generator to have more time to converge to the power level and frequency level, the x MHz RF generator is maintained at the second power level for a longer period of time than the normal time period. The general time period is the amount of time in which the impedance mismatch does not decrease (eg, cancel).

When the y MHz RF generator converges to the power level and frequency level, The converged power level is stored in power controller 150 as power level Ps1 and converges The frequency level is stored in the AFT 138 as the frequency level Fs1. The first critical value is generated by the power level Ps1 during the training routine operation, and the first critical value corresponds to the frequency level Fs1. For example, sensor 212 measures complex voltage and complex current during training routine operations. When the frequency of the y MHz RF generator is Fs1, the sensor 212 measures the complex voltage and the complex current during the training routine operation. The DSP 153 receives the complex voltage and the complex current and generates a first threshold from the complex voltage and the complex current measured during the training routine.

Similarly, during the training routine, the second and third thresholds are determined by the DSP 153.

6 is a diagram of an embodiment of a table 250 illustrating the comparison of impedance changes to threshold values to determine the power level or frequency level of the RF signal supplied by the RF generator. When the state of the pulse signal changes from the state S1 to the state S2, it is judged whether or not the impedance change Δz12 of the plasma is larger than the second critical value (indicated as "m"). After determining that the impedance change Δz12 is at least equal to the second threshold m, the power level Ps2 or the frequency level Fs2 is supplied to the power source 162 of the y MHz RF generator. On the other hand, after determining that the impedance change Δz12 is less than the second threshold m, the power level Ps1 or the frequency level Fs1 is supplied to the power source 162 of the y MHz RF generator.

Similarly, when the state of the pulse signal changes from the state S2 to the state S3, it is judged whether or not the impedance change Δz23 of the plasma is larger than the third critical value (indicated as "n"). After determining that the impedance change Δz23 is greater than the third threshold value n, the power level Ps3 or the frequency level Fs3 is supplied to the power source 162 of the y MHz RF generator. On the other hand, after determining that the impedance change Δz23 is less than the third critical value n, the power level Ps2 or the frequency level Fs2 is supplied to the power source 162 of the y MHz RF generator.

Further, when the state of the pulse signal changes from the state S3 to the state S1, it is judged whether or not the impedance change Δz31 of the plasma is larger than the first critical value (indicated as "o"). After determining that the impedance change Δz31 is greater than the first critical value o, the power level Ps1 or the frequency level Fs1 is supplied to the power source 162 of the y MHz RF generator. On the other hand, after determining that the impedance change Δz31 is less than the first critical value o, the power level Ps3 or the frequency level Fs3 is supplied to the power source 162 of the y MHz RF generator.

In some embodiments, another parameter value (eg, gamma value, VSWR, etc.) can be used in place of the impedance change to determine the power level and/or frequency level provided to power source 162.

7 is a schematic diagram of an embodiment of a system 260 that is based on system 260 during production. The AFT 220, 222, or 224 is selected in the state of the pulse signal 102 and based on whether the parameter value exceeds a critical value. Selection logic 226 selects AFT 220 when pulse signal 102 is in state S1 and the parameter value measured during state S1 is at least equal to the first threshold. On the other hand, selection logic 226 selects AFT 224 when pulse signal 102 is in state S1 and the measured parameter value during state S1 is less than the first threshold.

When the selection logic 226 includes a multiplexer, it is received at the select input of the multiplexer A signal from DSP 270 indicating that the parameter value during one of the states of pulse signal 102 is at least equal to or less than a threshold.

The DSP 270 is an example of the DSP 153 (Fig. 1). DSP 270 is based on state The first parameter value is determined by the complex current and the complex voltage received by the sensor 272 during S1. The DSP 270 further determines that the first parameter value is at least equal to the first threshold and provides a signal indicative of the determination to the selection logic 226. The selection logic 226 selects the AFT 220 upon receiving a signal indicating that the first parameter value is at least equal to the first threshold value. On the other hand, the DSP 270 determines that the first parameter value determined during the state S1 of the pulse signal 102 is less than the first threshold value and provides a signal indicative of this determination to the selection logic 226. The selection logic 226 selects the AFT 224 upon receiving a signal indicating that the first parameter value is less than the first threshold value. Sensor 272 is an example of one of sensors 212 (FIG. 1) of a y MHz RF generator.

In addition, DSP 270 is based on self-sensor 272 received during state S2. The complex current and the complex voltage determine the second parameter value. The DSP 270 further determines that the second parameter value is at least equal to the second threshold and provides a signal indicative of the determination to the selection logic 226. The selection logic 226 selects the AFT 222 upon receiving a signal indicating that the second parameter value is at least equal to the second threshold value. On the other hand, the DSP 270 determines that the second parameter value determined during the state S2 of the pulse signal 102 is less than the second threshold value and provides a signal indicative of this determination to the selection logic 226. The selection logic 226 selects the AFT 220 upon receiving a signal indicating that the second parameter value is less than the second threshold value.

In addition, DSP 270 is based on self-sensor 272 received during state S3. The complex current and the complex voltage determine the third parameter value. The DSP 270 further determines that the third parameter value is at least equal to the third threshold and provides a signal indicative of the determination to the selection logic 226. Receiving The selection logic 226 selects the AFT 224 after it reaches a signal indicating that the third parameter value is at least equal to the third threshold value. On the other hand, the DSP 270 determines that the third parameter value determined during the state S3 of the pulse signal 102 is less than the third threshold value, and provides a signal indicative of this determination to the selection logic 226. The selection logic 226 selects the AFT 222 upon receiving a signal indicating that the third parameter value is less than the third threshold value.

In some embodiments, selection logic 226 makes a selection between power controllers Not between AFT 220, 222, and 224. For example, selection logic 226 is coupled to power controllers 150, 152, and 154 (FIG. 1) of the y MHz RF generator. In this example, after receiving a signal indicating that the first parameter value is at least equal to the first threshold value, the selection logic 226 selects the power controller 150; and upon receiving it, the first parameter value is less than the first value. After the signal of the threshold value is determined, the selection logic 226 selects the power controller 154. As another example, upon receiving a signal indicating that the second parameter value is at least equal to the second threshold value, the selection logic 226 selects the power controller 152; and upon receiving it indicates that the second parameter value is less than the second After the signal of the threshold value is determined, the selection logic 226 selects the power controller 150. As yet another example, upon receiving a signal indicating that the third parameter value is at least equal to the third threshold value, the selection logic 226 selects the power controller 154; and upon receiving it, the third parameter value is less than After the signal of the three threshold values is determined, the selection logic 226 selects the power controller 152.

In some embodiments, selection logic 226 is implemented in a z MHz RF generator Within, and operate in a similar manner as described herein. For example, selection logic 226 selects between the AFTs of the z MHz RF generators or between the power controllers of the z MHz RF generators based on the state of the pulse signal 102 and based on whether the parameter values exceed a critical value.

FIG. 8A is a line diagram of an embodiment of graphs 302, 304, 306, and 308. chart Each of 302, 304, 306, and 308 plots the power value as a function of time t in kilowatts (kW). As shown in graph 302, the 2 MHz power signal (the power signal supplied by the 2 MHz power supply) has a power value a4 during states S1 and S2 and a power value of zero during state S3. Again, the 60 MHz power signal (the power signal supplied by the 60 MHz power supply) has a power value a1 during state S1, a power value a2 during state S2, and a power value a3 during state S3. The power value a4 is greater than the power value a3, and the power value a3 is greater than the power value a2. The power value a2 is greater than the power value a1, and the power value a1 is greater than zero.

As shown in graph 304, the 60 MHz power signal has power during state S3. The value a0. The power value a0 is smaller than the power value a1. Furthermore, as indicated by chart 306, the 60 MHz signal has a power value a2 during state S1, a power value a1 during state S2, and a power value a3 during state S3. As shown in graph 308, the 60 MHz signal has a power value a2 during state S1, a power value a1 during state S2, and a power value a0 during state S3.

Figure 8B is a line diagram of an embodiment of charts 310, 312, 314, and 316. chart Each of 310, 312, 314, and 316 plots the power value as a function of time t in kW. As shown in graph 310, the 60 MHz power signal has a power value a1 during state S1, a power value a2 during state S2, and a power value a2 during state S3.

As shown in graph 312, the 60 MHz power signal has power during state S1. The value a1 has a power value a2 during the state S2 and a power value a1 during the state S3. Furthermore, as shown in graph 314, the 60 MHz signal has a power value a2 during state S1, a power value a1 during state S2, and a power value a1 during state S3. As shown in graph 316, the 60 MHz signal has a power value a2 during state S1, a power value a1 during state S2, and a power value a2 during state S3.

9A is a line diagram of an embodiment of graphs 320, 322, 324, and 326. chart Each of 320, 322, 324, and 326 plots the power value as a function of time t in kW. As shown in graph 320, the 60 MHz power signal has a power value a1 during state S1, a power value a2 during state S2, and a power value a3 during state S3. Further, in graph 320, the 2 MHz power signal has a power value a4 during state S1, a power value a4 during state S2, and a power value a0 during state S3. The power value a0 is less than the power value a1 and greater than zero.

Additionally, as shown in graph 322, the 60 MHz power signal is during state S1. There is a power value a2, a power value a3 during the state S2, and a power value a1 during the state S3. Again, as shown in graph 324, the 60 MHz power signal has a power value a2 during state S1, a power value a1 during state S2, and a power value a3 during state S3. Furthermore, as shown in graph 326, the 60 MHz power signal has a power value a3 during state S1, a power value a2 during state S2, and a power value a1 during state S3.

Figure 9B is a line drawing of an embodiment of charts 328, 330, 332, and 334. chart Each of 328, 330, 332, and 334 plots the power value as a function of time t in kW. As shown in graph 328, the 60 MHz power signal has a power value a2 during state S1, a power value a3 during state S2, and a power value a3 during state S3. Further, in graph 330, the 60 MHz power signal has a power value a2 during state S1, a power value a3 during state S2, and a power value a2 during state S3. Further, in graph 332, the 60 MHz power signal has a power value a2 during state S1, a power value a1 during state S2, and a power value a1 during state S3. Further, in graph 334, the 60 MHz power signal has a power value a2 during state S1, a power value a1 during state S2, and a power value a2 during state S3.

Figure 10A is a line drawing of an embodiment of charts 336, 338, 340, and 342. Figure Each of tables 336, 338, 340, and 342 depicts the power value as a function of time t in kW. As shown in graph 336, the 27 MHz power signal (the power signal supplied by the 27 MHz power supply) has a power value a31 during states S1, S2, and S3. The power value a31 is greater than the power value a3 and less than the power value a4. The remainder of chart 336 is similar to chart 302 (Fig. 8A).

As shown in each of Figures 338, 340, and 342, a 27 MHz power signal The number has a power value a31 during states S1, S2, and S3. In addition, the remainder of chart 338 is similar to chart 304 (FIG. 8A), the remainder of chart 340 is similar to chart 306 (FIG. 8A), and the remainder of chart 342 is similar to chart 308 (FIG. 8A).

In some embodiments, the power value a31 is between zero and the power value a4.

FIG. 10B is a line diagram of an embodiment of charts 344, 346, 348, and 350. Figure Each of Tables 344, 346, 348, and 350 plots the power value as a function of time t in kW. As shown in graph 344, the 27 MHz power signal (the power signal supplied by the 27 MHz power supply) has a power value a31 during states S1, S2, and S3. The remainder of chart 344 is similar to chart 310 (Fig. 8B).

As shown in each of Figures 346, 348, and 350, a 27 MHz power signal The number has a power value a31 during states S1, S2, and S3. In addition, the remainder of chart 346 is similar to chart 312 (FIG. 8B), the remainder of chart 348 is similar to chart 314 (FIG. 8B), and the remainder of chart 350 is similar to chart 316 (FIG. 8B).

Figure 11A is a line drawing of an embodiment of charts 352, 354, 356, and 358. Figure Each of tables 352, 354, 356, and 358 plots the power value as a function of time t in kW. As shown in graph 352, the 27 MHz power signal (the power signal supplied by the 27 MHz power supply) has a power value a31 during states S1, S2, and S3. The remainder of chart 352 is similar to chart 320 (Fig. 9A).

As shown in each of Figures 354, 356, and 358, a 27 MHz power signal The number has a power value a31 during states S1, S2, and S3. In addition, the remainder of chart 354 is similar to chart 322 (FIG. 9A), the remainder of chart 356 is similar to chart 324 (FIG. 9A), and the remainder of chart 358 is similar to chart 326 (FIG. 9A).

Figure 11B is a line diagram of an embodiment of charts 360, 362, 364, and 366. Figure Each of tables 360, 362, 364, and 366 depicts the power value as a function of time t in kW. As shown in each of Figures 360, 362, 364, and 366, the 27 MHz power signal has a power value a31 during states S1, S2, and S3. The remainder of chart 360 is similar to chart 328 (Fig. 9B). In addition, the remainder of chart 362 is similar to chart 330 (FIG. 9B), the remainder of chart 364 is similar to chart 332 (FIG. 9B), and the remainder of chart 366 is similar to chart 334 (FIG. 9B).

Figure 12A is a line drawing of an embodiment of charts 368, 370, 372, and 374. Figure Each of tables 368, 370, 372, and 374 plots the power value as a function of time t in kW. As shown in each of Figures 368, 370, 372, and 374, the 27 MHz power signal has a power value a31 during states S1 and S2 and a power value a32 during state S3. The remainder of chart 368 is similar to chart 302 (Fig. 8A). In addition, the remainder of chart 370 is similar to chart 304 (FIG. 8A), the remainder of chart 372 is similar to chart 306 (FIG. 8A), and the remainder of chart 374 is similar to chart 308 (FIG. 8A).

Figure 12B is a line drawing of an embodiment of charts 376, 378, 380, and 382. Each of charts 376, 378, 380, and 382 plots the power value as a function of time t in kW. As shown in each of Figures 376, 378, 380, and 382, the 27 MHz power signal has a power value a31 during states S1 and S2 and a power value a32 during state S3. The power value a32 is greater than the power value a31. The remainder of chart 376 is similar to chart 310 (Fig. 8B). In addition, the remainder of chart 378 is similar to chart 312 (Fig. 8B), and the rest of chart 380 is similar. Chart 314 (Fig. 8B), and the remainder of chart 382, resemble chart 316 (Fig. 8B).

Figure 13A is a line drawing of an embodiment of charts 384, 386, 388, and 390. Figure Each of Tables 384, 386, 388, and 390 plots the power value as a function of time t in kW. As shown in graph 384, the 27 MHz power signal has a power value a31 during states S1 and S2 and a power value a32 during state S3. The remainder of chart 384 is similar to chart 320 (Fig. 9A). In addition, the remainder of chart 386 is similar to chart 322 (FIG. 9A), the remainder of chart 388 is similar to chart 324 (FIG. 9A), and the remainder of chart 390 is similar to chart 326 (FIG. 9A).

Figure 13B is a line drawing of an embodiment of charts 392, 394, 396, and 398. Figure Each of Tables 392, 394, 396, and 398 plots the power value as a function of time t in kW. As shown in each of Figures 392, 394, 396, and 398, the 27 MHz power signal has a power value a31 during states S1 and S2 and a power value a32 during state S3. The remainder of chart 392 is similar to chart 328 (Fig. 9B). In addition, the remainder of chart 394 is similar to chart 330 (FIG. 9B), the remainder of chart 396 is similar to chart 332 (FIG. 9B), and the remainder of chart 398 is similar to chart 334 (FIG. 9B).

14A is a line diagram of an embodiment of graphs 402, 404, 406, and 408. Figure Each of tables 402, 404, 406, and 408 plots the power value as a function of time t in kW. As shown in each of Figures 402, 404, 406, and 408, the 27 MHz power signal has a power value a32 during states S1 and S2 and a power value a31 during state S3. The remainder of chart 402 is similar to chart 302 (Fig. 8A). In addition, the remainder of chart 404 is similar to chart 304 (FIG. 8A), the remainder of chart 406 is similar to chart 306 (FIG. 8A), and the remainder of chart 408 is similar to chart 308 (FIG. 8A).

14B is a line diagram of an embodiment of charts 410, 412, 414, and 416. Figure Each of tables 410, 412, 414, and 416 depicts the power value as a function of time t in kW. As shown in each of the graphs 410, 412, 414, and 416, the 27 MHz power signal has a power value a32 during states S1 and S2 and a power value a31 during state S3. The remainder of chart 410 is similar to chart 310 (Fig. 8B). In addition, the remainder of chart 412 is similar to chart 312 (FIG. 8B), the remainder of 414 is similar to chart 314 (FIG. 8B), and the remainder of chart 416 is similar to chart 316 (FIG. 8B).

Figure 15A is a line diagram of an embodiment of charts 418, 420, 422, and 424. Figure Each of the tables 418, 420, 422, and 424 plots the power value as a function of time t in kW. As shown in graph 418, the 27 MHz power signal has a power value a32 during states S1 and S2 and a power value a31 during state S3. The remainder of chart 418 is similar to chart 320 (Fig. 9A). In addition, the remainder of chart 420 is similar to chart 322 (FIG. 9A), the remainder of chart 422 is similar to chart 324 (FIG. 9A), and the remainder of chart 424 is similar to chart 326 (FIG. 9A).

Figure 15B is a line drawing of an embodiment of charts 426, 428, 430, and 432. Figure Each of tables 426, 428, 430, and 432 plots the power value as a function of time t in kW. As shown in each of Figures 426, 428, 430, and 432, the 27 MHz power signal has a power value a32 during states S1 and S2 and a power value a31 during state S3. The remainder of chart 426 is similar to chart 328 (Fig. 9B). In addition, the remainder of chart 428 is similar to chart 330 (FIG. 9B), the remainder of chart 430 is similar to chart 332 (FIG. 9B), and the remainder of chart 432 is similar to chart 334 (FIG. 9B).

It is noted that although the above embodiments are described with reference to a parallel plate plasma chamber Said, but in one embodiment, the above embodiments are applied to other types of plasma chambers, such as plasma chambers including inductively coupled plasma (ICP) reactors, including electron cyclotron resonance (ECR) reactors. Plasma chamber and so on. For example, power sources 160 and 162 are coupled to the inductance of the ICP plasma chamber.

It should be noted that although the above embodiments relate to a 2 MHz RF signal, and/or A 60 MHz RF signal, and/or a 27 MHz RF signal is provided to the lower electrode 120 and the upper electrode 122 is grounded; however, in various embodiments, 2 MHz, 60 MHz, and 27 MHz signals are provided to the upper electrode 122 and the lower electrode 120 is grounded.

In an embodiment, by the AFT and/or power controller of the RF generator The operation of the line is performed by the DSP of the RF generator. For example, the operations performed by AFTs 130, 132, and 134 described herein are performed by DSP 140 (FIG. 1). As another example, the operations performed by AFT 138, AFT 141, AFT 142, power controller 150, power controller 152, and power controller 154 are performed by DSP 153 (FIG. 1).

Can be configured with a variety of computer systems (including handheld devices, microprocessor systems, bases) Embodiments described herein are implemented in microprocessors or programmable consumer electronics, minicomputers, host computers, and the like. Embodiments may also be implemented in a distributed computing environment where the work is performed by a remote processing device connected through a network.

With the concept of the above embodiment, it should be understood that the embodiment may adopt a computer Various computer-implemented operations of the data stored in the system. These operations are operations that require physical processing of physical quantities. Any of the operations described herein that form part of the embodiments are useful mechanical operations. Embodiments also relate to apparatus or devices for performing these operations. The device can be specially constructed as a special purpose computer. When defined as a special-purpose computer, the computer may also perform other processing, program execution, or routine work that is not part of that particular use, while still operating for that particular purpose. Alternatively, the operation can be handled by a general purpose computer selectively activated or configured by one or more computer programs stored in computer memory, cache memory, or network. When data is obtained on the Internet, it can be processed by other computers on the network, such as cloud computing resources.

One or more embodiments of the present invention can also be made as a non-transitory computer readable medium Computer readable code on the body. A computer readable medium is any data storage device (eg, a memory device, etc.) that can store data, which can then be read by a computer system. Examples of computer readable media include hard disk, network attached storage (NAS), ROM, RAM, compact disc (CD-ROM), recordable compact disc (CD-R), rewritable compact disc (CD-RW), Magnetic tape, and other optical and non-optical data storage devices. The computer readable medium can include computer readable physical media distributed over a network coupled computer system such that the computer readable code is stored and executed in a distributed fashion.

Although the operation of these methods is described in a specific order, it should be understood that Other housekeeping operations can be performed between them, or the operations can be adjusted to occur at slightly different times, or as long as the processing of the overlay operations is performed in the desired manner, the operations can be dispersed to allow processing operations to occur in relation to processing. In the system of each period.

Without departing from the scope of the various embodiments described in the present disclosure In this case, one or more of the technical features of any embodiment can be combined with one or more of the features of any other embodiment.

Although the above embodiments have been described in detail for the purpose of clarity, it will be obvious It is to be understood that some variations and modifications may be implemented within the scope of the appended patent application. therefore, The present invention is to be considered as illustrative and not restrictive, and the invention is not limited by the scope of the inventions.

100‧‧‧ system

102‧‧‧ pulse signal

104‧‧‧The plasma chamber

106‧‧‧ impedance matching circuit

120‧‧‧ lower electrode

122‧‧‧Upper electrode

124‧‧‧Substrate

126‧‧‧ upper surface

130, 132, 134, 138, 141, 142‧‧ Automatic frequency tuner

140, 153‧‧‧ digital signal processor

144, 146, 148, 150, 152, 154‧‧‧ power controller

151‧‧‧Tool user interface

160, 162‧‧‧ power supply

180, 182‧‧‧RF cable

184‧‧‧RF transmission line

210, 212‧‧‧ sensor

220, 222‧‧‧Automatic frequency tuner

221, 223‧‧‧ analog digital converter

Claims (26)

A plasma processing system comprising: a main generator comprising three main power controllers, each main power controller is configured to be set at a predetermined power; a primary generator, including three power controllers, and each secondary power control The device is configured to be set at a predetermined power; and a control circuit is provided as an interface to each of the primary and secondary generators, the control circuit configured to generate a pulse signal, the pulse signal being defined to include three states, the states Defining a loop, repeating the loop a plurality of times during operation, each state being defined to select one of the first, second, or third primary power controllers of the three primary power controllers, and also selecting the three primary power controllers The first, second or third power controller of the power controller; wherein the primary generator and the secondary generator are coupled to the plasma chamber via an impedance matching circuit. A plasma processing system according to claim 1, wherein the primary generator comprises three primary automatic frequency tuners (AFTs), each primary AFT system configuration being set at a predetermined frequency, wherein the secondary generator comprises three AFTs. Each secondary AFT configuration is set at a predetermined frequency, each state being defined as selecting the first, second, or third primary AFT of the three primary AFTs, and also selecting the third of the three AFTs One, or the second or third AFT. A plasma processing system according to claim 1 wherein the primary generator comprises a primary radio frequency (RF) generator and the secondary generator comprises a secondary RF generator. The plasma processing system of claim 1, wherein the primary power controller is part of a processor of the primary generator, wherein the secondary power controller is a processor of the secondary generator Part of it. The plasma processing system of claim 1, wherein the pulse signal is a digital pulse signal. A plasma processing system according to claim 1 wherein the operation comprises operation of the primary and secondary RF generators. A plasma system configured to operate in a plurality of states, the plasma system comprising: a primary radio frequency (RF) generator for receiving a pulse signal having three or more states, the three or The more states include a first state, a second state, and a third state, the primary RF generator being coupled to the plasma chamber via an impedance matching circuit; a primary RF generator for receiving the pulse signal, the secondary An RF generator is coupled to the plasma chamber via the impedance matching circuit; each of the primary RF generator and the secondary RF generator is configured to determine whether the pulse signal is in the first state, or the first a second state, or a third state; the primary RF generator is configured to provide an RF signal having a first primary quantitative level to the impedance matching circuit to determine that the pulse signal is in the first state; The RF generator is configured to provide an RF signal having a first quasi-quantitative level to the impedance matching circuit to determine that the pulse signal is in the first state; the primary RF generator is configured to The first primary quantitative level RF signal is provided to the impedance matching circuit to determine that the pulse signal is in the second state; the secondary RF generator is configured to have the second secondary quantized RF a signal is provided to the impedance matching circuit to determine that the pulse signal is in the second state; the primary RF generator is configured to provide an RF signal having a second primary quantitative level to the impedance matching circuit to respond a determination that the pulse signal is in the third state; the secondary RF generator is configured to provide an RF signal having a third secondary quantitative level to the impedance matching circuit to determine that the pulse signal is in the third state . The plasma system of claim 7, wherein the first and second states are related to the same power level of the primary RF generator. The plasma system of claim 7, wherein the first and third states are related to the main Different power levels of the RF generator are correlated. The plasma system of claim 7, wherein the first state occurs for a period equal to the period in which the second state occurs. The plasma system of claim 7, wherein the period in which the first state occurs is not equal to the period in which the second state occurs. The plasma system of claim 7, wherein the second state occurs for a period equal to a period in which the third state occurs. The plasma system of claim 7, wherein the period in which the second state occurs is not equal to the period in which the third state occurs. For example, in the plasma system of claim 7, wherein the first major quantitative level, the second major quantitative level, the first secondary quantitative level, the second secondary quantitative level, and the third secondary quantitative The level is the power level. For example, in the plasma system of claim 7, wherein the first major quantitative level, the second major quantitative level, the first secondary quantitative level, the second secondary quantitative level, and the third secondary quantitative The level is the frequency level. A plasma system configured to operate based on a plurality of states, the plasma system comprising: a primary radio frequency (RF) generator for receiving a pulse signal having three or more states, three or more The state includes a first state, a second state, and a third state, the primary RF generator being coupled to the plasma chamber via an impedance matching circuit, the primary RF generator for determining whether the pulse signal is in the first state, or a second state, or the third state, the primary RF generator configured to provide an RF signal having a first primary quantitative level to The plasma chamber is energized to determine that the pulse signal is in the first state, the primary RF generator being configured to provide an RF signal having the first primary quantitative level to the plasma chamber Resolving that the pulse signal is in the second state, the primary RF generator is configured to provide an RF signal having a second primary quantitative level to the plasma chamber to respond to the pulse signal at the third State determination; a primary RF generator coupled to the plasma chamber via the impedance matching circuit, the secondary RF generator for determining whether a parameter associated with the plasma exceeds a first threshold, the secondary RF generation The apparatus is configured to provide an RF signal having a first quasi-quantitative level in response to a determination that the parameter associated with the plasma does not exceed the first threshold, the secondary RF generator configured to provide a second The RF signal of the secondary quantitative level is responsive to a determination that the parameter associated with the plasma exceeds the first threshold. The plasma system of claim 16, wherein the secondary RF generator is configured to determine whether the pulse signal transitions from the third state to the first state, and when transitioning from the third state to the first state occurs The secondary RF generator determines whether the parameter associated with the plasma exceeds the first threshold. The plasma system of claim 17, wherein the secondary RF generator is configured to determine whether the pulse signal transitions from the first state to the second state, when transitioning from the first state to the second state occurs And the secondary RF generator determines whether the parameter associated with the plasma exceeds a second threshold, the secondary RF generator configured to provide an RF signal having the second secondary quantitative level in response to The parameter associated with the plasma does not exceed the second threshold value, the secondary RF generator configured to provide an RF signal having a third quasi-quantitative level in response to the parameter associated with the plasma exceeding The determination of the second threshold value. The plasma system of claim 18, wherein the secondary RF generator is configured to determine whether the pulse signal transitions from the second state to the third state, when transitioning from the second state to the third state occurs When the secondary RF generator determines whether The parameter associated with the plasma exceeds a third threshold, the secondary RF generator configured to provide an RF signal having the third secondary quantitative level in response to the parameter associated with the plasma not exceeding the A third threshold value is determined, the secondary RF generator configured to provide an RF signal having the first secondary quantitative level in response to a determination that the parameter associated with the plasma exceeds the third threshold. The plasma system of claim 16, wherein the first primary quantitative level and the second primary quantitative level are power levels. The plasma system of claim 16, wherein the first primary quantitative level and the second primary quantitative level are frequency levels. The plasma system of claim 16, wherein the first state occurs for a period equal to the period in which the second state occurs. The plasma system of claim 16, wherein the period in which the first state occurs is not equal to the period in which the second state occurs. The plasma system of claim 16, wherein the parameter related to the plasma comprises: a change in impedance of the plasma, or a gamma value associated with the plasma, or a voltage resident associated with the plasma Wave ratio, or a combination thereof. A plasma method comprising: receiving a pulse signal, wherein receiving the pulse signal is performed by a primary processor; receiving the pulse signal, wherein receiving the pulse signal is performed by a secondary processor; determining whether the pulse signal is a first state, or a second state, or a third state, wherein the determining is performed by the primary processor; determining whether the pulse signal is in the first state, or the second state, or the third state, wherein The determination is performed by the secondary processor; Providing a first primary quantitative level of the first radio frequency (RF) signal to the primary power source to determine that the pulse signal is in the first state, wherein providing the first primary quantitative level is performed by the primary processor Providing a first quantification level of the second RF signal to the secondary power source to determine that the pulse signal is in the first state, wherein the first quantification level is provided by the secondary processor Performing; providing the first primary quantitative level of the first RF signal to the primary power source to determine that the pulse signal is in the second state, wherein the first primary quantitative level is provided by the primary processing Performing, providing a second secondary quantitative level of the second RF signal to the secondary power source to determine that the pulse signal is in the second state, wherein the second secondary quantitative level is provided Performed by the secondary processor; providing a second primary quantitative level of the first RF signal to the primary power source to determine that the pulse signal is in the third state, wherein the second primary quantitative level is provided by Executing by the main processor; providing a third quantification level of the second RF signal to the secondary power source to determine that the pulse signal is in the third state, wherein the third sub-quantity level is provided And being executed by the secondary processor; and supplying the first RF signal and the second RF signal to an impedance matching circuit coupled to the plasma chamber. The plasma method of claim 25, wherein the first state occurs for a period equal to the second state.