KR20140035860A - Adjustment of power and frequency based on three or more states - Google Patents

Abstract

Disclosed are methods and systems for adjusting power and frequency based on three or more states. One of the methods includes a step of receiving a pulse signal having a plurality of states. A plurality of wireless RF generator receives a pulse signal. If a pulse signal having a first state is received, an RF signal having a preset power level is produced by a first RF generator and a second RF generator. Also, if a pulse signal having a second state is received, an RF signal having a preset power level is produced by the first and second RF generators. In addition, if a pulse signal having a third state is received, an RF signal having a preset power level is produced by the first and second RF generators. [Reference numerals] (106) Matching; (151) Tool UI; (212) Sensor; (AA) TTL signals; (BB) x MHz generator; (CC) y MHz generator; (DD) Plasma

Description

Adjust power and frequency based on three or more states {ADJUSTMENT OF POWER AND FREQUENCY BASED ON THREE OR MORE STATES}

TECHNICAL FIELD The present invention relates to improving the response time to changes in plasma impedance, and more particularly, to a computer program, apparatus, and method for adjusting power and frequency based on three or more states.

In some plasma processing systems, a plurality of radio frequency (RF) signals are supplied to one or more electrodes in the plasma chamber. The RF signal helps to generate a plasma in the plasma chamber. The plasma is used for various operations, for example, cleaning of the substrate disposed on the lower electrode, etching of the substrate, and the like.

In this situation, embodiments disclosed in the present invention will be provided.

Embodiments of the present invention provide an apparatus, method and computer program for adjusting power and frequency based on three or more states. Embodiments of the invention may be implemented in various ways, for example, on a process, apparatus, system, device, or computer readable medium. Several embodiments are described below.

In some embodiments, a plasma processing system is disclosed. The plasma system includes a primary generator that includes three primary power controls. Each of the primary power controllers is configured to have a predefined power setting. The plasma system includes a secondary generator that includes three secondary power controls. Each of the secondary power controllers is configured to have a predefined power setting. The plasma system includes a control circuit connected to an input to each of the primary generator and the secondary generator. The control circuit is configured to generate a pulse signal, the pulse signal being defined to include three states that define a cycle that is repeated during operations for a plurality of cycles. Each state is defined to select the first, second, or third of the three primary power controls, while also selecting the first, second, or third of the three secondary power controls.

In one embodiment, a plasma system is disclosed that is configured to operate based on a number of states. The plasma system includes a primary radio frequency (RF) generator that receives a pulse signal. The pulse signal has three or more states. Three or more states include a first state, a second state, and a third state. The primary RF generator is configured to couple to the plasma chamber through an impedance matching circuit. The plasma system also includes a secondary RF generator that receives the pulse signal. The secondary RF generator is configured to couple to the plasma chamber through an impedance matching circuit. Each of the primary RF generator and the secondary RF generator is configured to determine whether the pulse signal is in a first state, a second state, or a third state. The primary RF generator is configured to supply an RF signal having a first primary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in a first state. The secondary RF generator is configured to supply an RF signal having a first secondary quantitative level to the impedance matching circuit in response to determining that a pulse signal is in a first state. The primary RF generator is configured to supply an RF signal having a first primary quantitative level to an impedance matching circuit in response to determining that the pulse signal is in a second state. The secondary RF generator is configured to supply an RF signal having a second secondary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in the second state. The primary RF generator is configured to supply an RF signal having a second primary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in a third state. The secondary RF generator is configured to supply an RF signal having a third secondary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in a third state.

In various embodiments, a plasma system is disclosed that is configured to operate based on a number of states. The plasma system includes a primary radio frequency (RF) generator for receiving a pulse signal having three or more states. The three or more states include a first state, a second state, and a third state. The primary RF generator is configured to couple to the plasma chamber through an impedance matching circuit. The primary RF generator is configured to determine whether the pulse signal is in a first state, or a second state, or a third state. The primary RF generator is configured to strike the plasma by supplying an RF signal having a first primary quantitative level to the plasma chamber in response to determining that the pulse signal is in a first state, and determining that the pulse signal is in a second state. Responsive to supplying an RF signal having a first primary quantitative level to the plasma chamber in response to determining that a pulse signal is in a third state and to supply an RF signal having a second primary quantitative level to the plasma chamber in response to determining that a pulse signal is in a third state. do. The plasma system includes a secondary RF generator that couples to the plasma chamber through an impedance matching circuit. The secondary RF generator determines whether the parameter associated with the plasma exceeds the first threshold. The secondary RF generator is configured to supply an RF signal having a first secondary quantitative level in response to determining that the parameter associated with the plasma does not exceed the first threshold, and in response to determining that the parameter associated with the plasma exceeds the first threshold. And supply an RF signal having a second secondary quantitative level.

In some embodiments, the plasma method includes receiving a pulse signal. Receiving the pulse signal is performed by a processor. The plasma method also includes receiving a pulse signal. The operation of receiving the pulse signal is performed by the secondary processor. The method states that the pulse signal is in a first state. Or determining whether in a second state, or a third state. The pulse signal is in the first state. Or determining whether it is in the second state, or the third state is performed by the primary processor. The method states that the pulse signal is in a first state. Or determining whether in a second state, or a third state. The pulse signal is in the first state. Or determining whether it is in the second state, or the third state is performed by the secondary processor. The method also includes supplying a first radio frequency (RF) signal of a first primary quantitative level to a primary power supply in response to determining that the pulse signal is in a first state. Supplying the first primary quantitative level is performed by the primary processor. The method includes supplying a second RF signal of a first secondary quantitative level to a secondary power supply in response to determining that a pulse signal is in the first state. Supplying the first secondary quantitative level is performed by a secondary processor.

In such an embodiment, the plasma method includes supplying a first RF signal of a first primary quantitative level to a primary power supply in response to determining that the pulse signal is in a second state. Supplying the first primary quantitative level is performed by the primary processor. The method includes supplying a second RF signal of a second secondary quantitative level to a secondary power supply in response to determining that the pulse signal is in a second state. Supplying the second secondary quantitative level is performed by a secondary processor. The method includes supplying a first RF signal of a second primary quantitative level to a primary power supply in response to determining that the pulse signal is in a third state. Supplying the second primary quantitative level is performed by the primary processor. The method includes supplying a second RF signal of a third secondary quantitative level to a secondary power supply in response to determining that the pulse signal is in a third state. Supplying the third secondary quantitative level is performed by a secondary processor.

Some advantages of the embodiments described above include reducing the reaction time in response to a change in plasma impedance inside the plasma chamber. For example, when a pulse signal, such as a transistor-transistor logic (TTL) signal, etc., is used to control the frequency and / or power supplied by multiple RF power supplies, the first object of the RF supply is an RF. It does not require time to respond to changes in power and / or frequency of the second object of the supply. Generally, when the frequency and / or power input to the first RF supply changes, there is a change in plasma impedance, and the first RF supply responds to the change in impedance. This reaction takes time, which negatively affects processes occurring inside the plasma chamber, such as etching, deposition, cleaning, and the like. When the RF supply responds to a change in the state of the state signal in relation to the predetermined frequency and / or the predetermined power, the time to respond to the change in the plasma impedance is reduced. This reduction results in a reduction in the time used to negatively impact the process.

Some additional advantages of the above-described embodiment include supplying accurate power and / or frequency levels to stabilize the plasma, for example reducing the difference between the impedance of the source and the load. When the power and / or frequency level is generated based on the change in the plasma impedance, the frequency and / or power level is correct. For example, the composite voltage and the composite current are measured and used to produce a change in plasma impedance. It is determined whether the change in plasma impedance exceeds the threshold, and if so, the power and / or frequency levels change to stabilize the plasma.

Another advantage of the embodiments includes reducing the amount of time to achieve stability of the plasma. Training routines are used to determine frequency and / or power levels for application to the drive and amplifier system. The power and / or frequency level corresponds to the change in plasma impedance that is also determined during the training routine. Training routines save time during production, such as time to clean the substrate, time to process the substrate, time to etch the substrate, time to deposit material on the substrate, and the like. For example, during production, when it is determined that the change in plasma impedance exceeds a threshold, the power and / or frequency levels are applied to the power supply without the need to tune the power and / or frequency levels.

Other aspects will become apparent from the following detailed description, which is set forth in conjunction with the accompanying drawings.

Embodiments of the invention may be better understood with reference to the following detailed description, which is described in conjunction with the accompanying drawings.
1 is a block diagram of a system for adjusting the frequency and / or power of a radio frequency (RF) generator based on multiple states of a pulse signal, in accordance with one embodiment disclosed herein.
2 is a graph illustrating states S1, S2, and S3, in accordance with one embodiment disclosed herein.
3 is a diagram of a graph showing different time ranges for different states, in accordance with one embodiment disclosed herein.
4 is a diagram of a system for selecting one of automatic frequency tuners (AFT) based on a state of a pulse signal, in accordance with one embodiment disclosed herein.
FIG. 5 relates to a system for controlling the frequency and / or power of an RF signal generated by a y MHz RF generator based on a change in impedance of a plasma and a state of a pulse signal, according to one embodiment disclosed herein. Drawing.
FIG. 6 is a table illustrating a comparison of threshold and impedance changes to determine a frequency level or power level of an RF signal supplied by an RF generator, in accordance with one embodiment disclosed herein.
7 is a diagram of a system for selecting an AFT based on whether a parameter value exceeds a threshold and based on a state of a pulse signal, in accordance with one embodiment disclosed herein.
FIG. 8A is a diagram of a graph for explaining signals generated by two RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has a different power value for each state, and FIG. The other of the signals has a power value of zero during one state.
FIG. 8B is a diagram of a graph for describing signals generated by two RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other of the signals has a power value of zero during one state.
FIG. 9A is a diagram of a graph illustrating signals generated by two RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has a different power value for each state, and FIG. The other of the signals has a non-zero power value of zero during all states.
FIG. 9B is a diagram of a graph illustrating signals generated by two RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other of the signals has a non-zero power value of zero during all states.
FIG. 10A is a diagram of a graph illustrating signals generated by three RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has a different power value for each state, and FIG. The other of the signals has a power value of zero during one state and the other of the signals has a constant power value during all states.
FIG. 10B is a diagram of a graph illustrating signals generated by two RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other of the signals has a power value of zero during one state and the other of the signals has a constant power value during all states.
FIG. 11A is a diagram of a graph for explaining signals generated by three RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has a different power value for each state, and FIG. Another one of the signals has a non-zero power value during all states, and another one of the signals has a constant power value during all states.
FIG. 11B is a diagram of a graph illustrating signals generated by two RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other one of the signals has a non-zero power value during all states, and the other one of the signals has a constant power value during all states.
12A is a diagram of a graph for describing signals generated by three RF generators, according to one embodiment of the present disclosure, wherein one of the signals has a different power value for each state, The other one of the signals has a zero power value during one state and the other one of the signals has the same power value during two states.
12B is a diagram of a graph for explaining signals generated by three RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other one of the signals has a zero power value during one state and the other one of the signals has the same power value during two states.
FIG. 13A illustrates a graph for describing signals generated by three RF generators according to one embodiment of the present disclosure, wherein one of the signals has a different power value for each state, and FIG. The other of the signals has a non-zero power value during all states, and the other of the signals has the same power value during the two states.
FIG. 13B is a diagram of a graph illustrating signals generated by three RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other one of the signals has a non-zero power value during all states, and the other one of the signals has the same power value during two states.
FIG. 14A is a diagram of a graph for explaining signals generated by three RF generators, according to one embodiment of the present disclosure, wherein one of the signals has a different power value for each state, and FIG. The other one of the signals has a zero power value during one state and the other one of the signals has the same power value during two states.
FIG. 14B is a diagram of a graph illustrating signals generated by three RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other one of the signals has a zero power value during one state and the other one of the signals has the same power value during two states.
FIG. 15A is a diagram illustrating a graph for describing signals generated by three RF generators according to one embodiment of the present disclosure, wherein one of the signals has a different power value for each state, and FIG. The other of the signals has a power value of zero during all states and the other of the signals has the same power value during two states.
FIG. 15B is a diagram of a graph illustrating signals generated by three RF generators, in accordance with one embodiment disclosed herein, wherein one of the signals has the same power value for two states; The other one of the signals has a non-zero power value during all states, and the other one of the signals has the same power value during two states.

The following embodiments disclose a method and system for adjusting power and frequency based on three or more states. It should be understood that embodiments of the invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

1 is a block diagram of one embodiment of a system for adjusting the frequency and power of an RF generator based on multiple states of a pulse signal 102 during production. System 100 includes an x megahertz radio frequency (RF) power generator that generates an RF signal, the RF signal passing through impedance matching circuit 106 to lower electrode 102 of plasma chamber 112. Supplied. Similarly, the y MHz power supply generates an RF signal and supplies the RF signal to the lower electrode 120 through the impedance matching circuit 106.

The value of x may be 2, 27, or 60. In addition, the value of y may be 27, 60, or 2. For example, when x is 2, y is 27 or 60. As another example, when x is 27, y is 2 or 60. As another example, when x is 60, y is 2 or 27. Moreover, it should be noted that the values 2 MHz, 27 MHz, and 60 MHz are supplied by way of example and not limitation. For example, instead of a 2 MHz RF generator, a 2.5 MHz RF generator may be used, and instead of a 60 MHz RF generator, a 65 MHz RF generator may be used. In one embodiment, in addition to the 2 MHz RF generator and the 27 MHz RF generator, a 60 MHz RF generator is used to supply RF power to the lower electrode 120.

The impedance matching circuit includes electrical circuit components such as inductors, capacitors, etc. to match the impedance of the source coupled to the impedance matching circuit with the impedance of the load coupled to the impedance matching circuit. For example, the impedance matching circuit 106 may include any components that couple the x MHz RF generator and the x MHz RF generator to the impedance matching circuit 106, such as impedances such as RF cables, and the plasma chamber. The impedance matching of any component that couples 104 and plasma chamber 104 to impedance matching circuit 106, such as an RF transmission line, is matched. In one embodiment, the impedance matching circuit is tuned to facilitate matching between the impedance of the source coupled to the impedance matching circuit and the impedance of the load coupled to the impedance matching circuit. Impedance matching between the source and the load reduces the chance that power reflected from the load will be directed to the source.

The plasma chamber 104 includes a lower electrode 120, an upper electrode 122 and other components (not shown), for example, an upper dielectric ring surrounding the upper electrode 122, a lower electrode surrounding the upper dielectric ring. Extensions, a lower dielectric ring surrounding the lower electrode, a lower electrode extension surrounding the lower electrode 120, an upper plasma exclusion zone (PEZ) ring, a lower PEZ ring, and the like. The upper electrode 122 is located opposite the lower electrode 120, facing the lower electrode 120.

The substrate 124, for example a semiconductor wafer, is supported on the upper surface 126 of the lower electrode 120. Integrated circuits, such as application specific integrated circuits (ASICs), programmable logic devices (PLDs), and the like, are deployed on the substrate 124, and the integrated circuits can be used in various devices, such as mobile phones, tablets, smartphones, computers, It is used in laptops and networking equipment. The lower electrode 120 is made of anodized aluminum, aluminum alloy, or the like. In addition, the upper electrode 122 is made of a metal such as aluminum, an aluminum alloy, or the like.

In one embodiment, the upper electrode 122 includes a hole coupled to a central gas supply (not shown). The central gas supply receives one or more process gases from a gas supply (not shown). Examples of process gases include oxygen-containing gases such as O ₂ . Other examples of process gases include tetrafluoromethane (CF ₄ ), sulfur hexafluoride (SF ₆ ), hexafluoroethane (C ₂ F ₆ ), and the like. The upper electrode 122 is grounded. The bottom electrode 120 is coupled to one or more RF generators through the impedance matching circuit 106. For example, the lower electrode 122 is coupled to the x MHz RF generator through the impedance matching circuit 106 and to the y MHz RF power supply through the impedance matching circuit 106.

When a process gas is supplied between the upper electrode 122 and the lower electrode 120, and an RF generator, for example an x MHz RF generator and / or a y MHz RF generator, is connected to the lower electrode ( When powering 120, the process gas is ignited to produce a plasma inside the plasma chamber 104. For example, a 2 MHz RF generator supplies power through impedance matching circuit 106 to ignite the process gas to produce a plasma. In some embodiments, the 2 MHz RF generator is a master RF generator.

A tool user interface (UI) 151 on a computer (not shown), such as a control circuit or the like, may comprise a pulse signal 102, for example a transistor-transistor logic (TTL) signal, a digital pulsing signal, a clock signal. For example, it is used to generate a signal having a duty cycle. In one embodiment, the computer includes a TTL circuit. As used herein, instead of a computer, a processor, controller, ASIC or PLD is used and these terms are used interchangeably herein.

Pulse signal 102 includes states S1, S2, and S3. In various embodiments, states S1, S2, and S3 are repeated in clock cycles. Each clock cycle includes states S1, S2, and S3. For example, states S1 and S2 are performed for half the clock cycle period, and state S3 is performed for the remaining half clock cycle period. As another example, state S1 is performed for a time span of one third of the clock cycle, state S2 is performed for another third time range, and state S3 for the remaining third time range. Is performed. In some embodiments, pulse signal 102 includes more or less than three states. An example of state S1 includes a state having a power level in a first range. An example of state S2 includes a state having a power level in a second range. An example of state S3 includes a state having a power level in a third range. In some embodiments, the power level of the second range is greater than the power level of the first range and the power level of the third range is greater than the power level of the second range. In various embodiments, the power level of the third range is less than the power level of the second range, and the power level of the second range is less than the power level of the first range. In one embodiment, the power level of the third range is not equal to the power level of the second range, and the power level of the second range is not equal to the power level of the first range.

In some embodiments, a range of power levels includes one or more power levels.

In various embodiments, instead of a computer, a clock source, such as a crystal oscillator or the like, is converted into a digital signal similar to the pulse signal 102 by an analog-to-digital signal converter. Used to generate For example, a crystal oscillator is manufactured to vibrate in an electric field by applying a voltage to an electrode on or near the crystal oscillator.

In some embodiments, two digital clock sources, such as a processor, a computer, and the like, are used to generate the pulse signal 102. The first clock signal of the first digital clock source has states 1 and 0, and the second clock signal of the second digital clock source has states 1 and 0. An adder, e.g., an additional circuit, is coupled with the two clock sources to add the first and second digital signals to produce a pulse signal 102 having three states.

The pulse signal 102 is transmitted to the digital signal processor (DSP) 140 of the x MHz RF generator and the DSP 153 of another y MHz RF generator. Each of DSPs 140 and 153 receives a pulse signal and identifies states S1, S2 and S3 of pulse signal 102. For example, DSP 140 distinguishes between states S1, S2, and S3. To illustrate how DSP 140 distinguishes states S1, S2, and S3, DSP 140 may generate a first level power level for a first time range, and a second time range for pulse signal 102. A power level of two ranges is determined to have a third power level for a third time range. It is pre-determined by the DSP 140 that the power level of the first range corresponds to state S1, the power level of the second range corresponds to state S2, and the power level of the third range corresponds to state S3.

In some embodiments, the first time range is the same as each of the second time range and the third time range. In various embodiments, the first time range is the same as the first time range or the second time range. In one embodiment, the first time range is not the same as each of the first and second time ranges. In various embodiments, the first time range is not the same as the first time range or the second time range.

Each of DSPs 140 and 153 stores states S1, S2, and S3 in memory locations of one or more memories within the DSP. Examples of memory devices include random access memory (RAM) and read-only memory (ROM). The memory device may be flash memory, a hard disk, a storage device, or a computer readable medium.

In various embodiments, the correspondence between a range of power levels and the state of the pulse signal 102 is stored in the memory device of the DSP. For example, a mapping between the power level of the first range and state S1 is stored in the memory device of DSP 140. As another example, the mapping between the power level of the second range and state S2 is stored in the memory device of DSP 153. As another example, the mapping between power level of the third range and state S3 is stored in DSP 140.

Each of DSPs 140 and 153 has a corresponding memory location to corresponding automatic frequency tuners (AFTs) 130, 132, 134, 138, 141 and 142, and power controls 144, 146, 148, 150, 152 and 154. Supplies the identified states S1, S2, and S3). For example, DSP 140 indicates to ATF 130 and power controller 144 that the pulse signal 102 is in state S1 between t1 and t2 of the first time range. As another example, DSP 140 indicates to AFT 132 and power controller 146 that power signal 102 is in state S2 between times t2 and t3 of the second time range. As another example, DSP 140 indicates to AFT 134 and power control 148 that pulse signal 102 is in state S3 between times t3 and t4 of the third time range. As another example, DSP 153 indicates to AFT 138 and power control 150 that pulse signal 102 is in state S1 between times t1 and t2 of the first time range. As another example, the DSP 153 indicates to the AFT 141 and the power control unit 152 that the pulse signal 102 is in a state S2 between the times t2 and t3 of the second time range. As another example, DSP 153 indicates to AFT 142 and power control 154 that pulse signal 102 is in state S3 between times t3 and t4 of the third time range. In some embodiments, the terms tuner and control are used interchangeably herein. Examples of AFTs are provided in US Pat. No. 6,020,794, which is incorporated herein in its entirety.

Each AFT 130, 132, 134, 138, 140, and 142 determines a frequency level based on the state of the pulse signal 102, and each power control unit 144, 146, 148, 150, 152, and 154 pulses. The power level is determined based on the state of the signal 102. For example, the AFT 130 determines that the frequency level Fp1 is to be supplied to the power supply 160 of the x MHz RF generator when the state of the pulse signal 102 is S1, and the power control unit 144 determines the pulse signal ( When the state of the 102 is S1, it is determined that the power level Pp1 is to be supplied to the power supply unit 160. As another example, the AFT 132 determines that the frequency level Fp2 is to be supplied to the power supply unit 160 when the state of the pulse signal 102 is S2, and the power control unit 146 determines that the state of the pulse signal 102 is At S2, it is determined that the power level Pp2 is to be supplied to the power supply unit 160. As another example, the AFT 134 determines that the frequency level Fp3 is to be supplied to the power supply unit 160 when the state of the pulse signal 102 is S3, and the power control unit 148 determines the state of the pulse signal 102. Determines that power level Pp3 is to be supplied to power supply 160 when S3 is.

As another example, the AFT 138 determines that the frequency level Fs1 is to be supplied to the power supply 162 of the y MHz RF generator when the state of the pulse signal 102 is S1, and the power control unit 150 determines the pulse signal ( When the state of the 102 is S1, it is determined that the power level Ps1 is supplied to the power supply unit 162. As another example, the AFT 141 determines that the frequency level Fs2 is to be supplied to the power supply 162 when the state of the pulse signal 102 is S2, and the power control unit 152 determines the state of the pulse signal 102. Determines that power level Ps2 is to be supplied to power supply 162 when S2 is S2. As another example, the AFT 142 determines that the frequency level Fs3 is to be supplied to the power supply 162 when the state of the pulse signal 102 is S3, and the power control unit 154 determines the state of the pulse signal 102. Determines that power level Ps3 is to be supplied to power supply 162 when S3 is.

In various embodiments, the level includes one or more values. For example, the frequency level includes one or more frequency values, and the power level includes one or more power values.

In some embodiments, the frequency levels Fp1, Fp2 and Fp3 are the same. In various embodiments, two or more of the frequency levels Fp1, Fp2, and Fp3 are not the same. For example, the frequency level Fp1 is not equal to the frequency level Fp2, which is not the same as the frequency level Fp3. In this example, the frequency level Fp3 is not equal to the frequency level Fp1. As another example, the frequency level Fp1 is not equal to the frequency level Fp2, which is the same as the frequency level Fp3.

Similarly, in various embodiments, the frequency levels Fs1, Fs2, and Fs3 are the same, or two or more of the frequency levels Fs1, Fs2, and Fs3 are not the same and the remaining frequency levels are the same, or the frequency levels Fs1, Fs2, and Fs3 Two or more of them are the same and the remaining frequency levels are not the same.

In various embodiments, the power levels Pp1, Pp2 and Pp3 are the same. For example, power level Pp1 is equal to power level Pp2, which is equal to power level Pp3. In many embodiments, two or more of power levels Pp1, Pp2, and Pp3 are not the same, and the remaining power levels are the same. For example, power level Pp1 is not equal to power level Pp2, which is equal to power level Pp3. As another example, power level Pp2 is not equal to power level Pp3, which is equal to power level Pp1. As another example, power level Pp1 is equal to power level Pp2, which is not the same as power level Pp3. In some embodiments, two or more of power levels Pp1, Pp2, and Pp3 are the same and the remaining power levels are not the same.

Similarly, in some embodiments, the power levels Ps1, Ps2 and Ps3 are the same. In various embodiments, two or more of power levels Ps1, Ps2, and Ps3 are not the same, and the remaining power levels are the same. In various embodiments, two or more of power levels Ps1, Ps2, and Ps3 are the same and the remaining power levels are not the same.

In one embodiment, frequency level Fs1 and power level Ps1 are generated based on the training routine. During the training routine, the y MHz RF generator and one or more portions within the plasma chamber 104 when the x MHz RF generator changes its power level signal from a low power level to a high power level, or from a low power level to a high power level. There is an impedance mismatch between them. High power levels are higher than low power levels. When the state of the pulse signal 102 supplied to the x MHz RF generator changes from S3 to S1, the x MHz RF generator changes its RF power signal. In this case, the y MHz RF generator has its frequency and power tuned when the x MHz RF generator starts to supply power at high or low power levels. In order to reduce impedance mismatching, the y MHz RF generator starts tuning to the frequency level and to the power level, for example, converging. Based on the reference deviation or other technique, the achievement of convergence can be determined by the DSP 153. In order for the y MHz RF generator to converge at the frequency level and the power level, the x MHz RF generator is maintained at a high power level or at a low power level for a longer period than usual. The usual period is the amount of time for which the impedance mismatch is not reduced, for example not removed. When the y MHz RF generator converges to a frequency level and a power level, the converged frequency level is stored in the AFT 138 as frequency level Fs1, and the converted frequency level is stored in the power control unit 150 as power level Ps1. Stored. Similarly, during the training routine, frequency levels Fs2, Fs3, Fp1, Fp2 and Fp3, and power levels Ps2, Ps3, Fs1, Fs2 and Fs3 are generated. Frequency level Fs2 is stored in AFT 141, frequency level Fs3 is stored in AFT 142, frequency level Fp1 is stored in AFT 130, frequency level Fp2 is stored in AFT 132, frequency level Fp3 is stored in AFT 134, power level Ps2 is stored in power controller 152, power level Ps3 is stored in power controller 154, power level Pp1 is stored in power controller 144, and power Level Pp2 is stored in power control 146, and power level Pp3 is stored in power control 148.

When the state of the pulse signal 102 is S1, the power control unit 144 supplies the power level Pp1 to the power supply unit 160, and the power control unit 150 supplies the power level Ps1 to the power supply unit 162. During state S1, AFT 130 supplies frequency level Fp1 to power supply 160, and AFT 138 supplies frequency level Fs1 to power supply 162.

Furthermore, in one embodiment, when the state of the pulse signal 102 is S1, the power control unit 146 does not supply the power level Pp2 to the power supply unit 160, and the power control unit 148 supplies the power level Pp3 to the power. It does not supply to the supply part 160. Also, in this embodiment, the AFT 132 does not supply the frequency level of Fp2 to the power supply 160, and the AFT 134 does not supply the frequency level of Fp3 to the power supply 160. In addition, when the state of the pulse signal 102 is S1, the power control unit 152 does not supply the power level Ps2 to the power supply unit 162, and the power control unit 154 transfers the power level Ps3 to the power supply unit 162. Not supplied Moreover, the AFT 141 does not supply the power level of Fs2 to the power supply 162, and the AFT 142 does not supply the frequency level of Fs3 to the power supply 162. In various embodiments, non-supply of the power level comprises supply of zero power level.

In some embodiments, during one state, simultaneously with the supply of the power level for that state to the power supply 162, the power level for that state is supplied to the power supply 160. For example, during the state S1, the power level Pp1 is supplied to the power supply unit 160 simultaneously with the supply of the power level Ps1 to the power supply unit 162. To explain further, in the state S1, the power level Pp1 is supplied to the power supply 160 during the clock edge of the pulse signal 102 such as while the power level Ps1 is supplied to the power supply 162.

Similarly, in various embodiments, during a state, at the same time as the supply of the frequency level for that state to the power supply 162, the frequency level for that state is supplied to the power supply 160. For example, during the state S1, the frequency level Fp1 is supplied to the power supply unit 160 simultaneously with the supply of the frequency level Fs1 to the power supply unit 162. To explain further, in the state S1, during the clock edge of the pulse signal 102 such as while the power level Fs1 is supplied to the power supply 162, the power level Fp1 is supplied to the power supply 160.

In some embodiments, during one state, simultaneously with the supply of the frequency level for that state to the power supply 162 and the power level for that state, the power level for that state and the frequency level for that state are determined by the power supply ( 160). For example, during the state S3, the frequency level Fp3 and the power level Pp3 are supplied to the power supply unit 160 simultaneously with the supply of the frequency level Fs3 and the power level Ps3 to the power supply unit 162. More specifically, in the state S1, the frequency level Fp3 and the power level Pp3 are supplied to the power supply 160 during the clock edge of the pulse signal such as while the frequency level Fs3 and the power level Ps3 are supplied to the power supply 162. .

In various embodiments, during one state, the power level is supplied to the power supply 160 of the x MHz RF generator by the power control unit of the x MHz RF generator, and at the same time, the power level is supplied to the power control unit of the y MHz RF generator. Is supplied to the power supply 162 of the y MHz RF generator. For example, during state S1, the power level of Pp1 is supplied to power supply 160, and at the same time, power level Ps1 is supplied to power supply 162. To illustrate further, in state S1, before or after the occurrence of the clock edge of pulse signal 102, the power level of Pp1 is within a few minutes of a second, for example within microseconds, milliseconds, nanoseconds, or the like. Supplied to the power supply unit 160. In this example, power level Ps1 is supplied to power supply 162 during generation of the clock edge.

Similarly, in some embodiments, during one state, the frequency level is supplied to the power supply 160 of the x MHz RF generator by the AFT of the x MHz RF generator, and at about the same time, the frequency level is the AFT of the y MHz RF generator. Is supplied to the power supply 162 of the y MHz RF generator. For example, during state S2, the frequency level of Fp2 is supplied to the power supply 160, and at the same time, the frequency level Fs2 is supplied to the power supply 162. To explain further, in the state S2, the frequency level of Fp2 is supplied to the power supply 160 within a few minutes of a second before or after the generation of the clock edge of the pulse signal 102. In this example, power level Fs2 is supplied to power supply 162 during generation of the clock edge.

Similarly, in various embodiments, during one state, the power supply 160 of the x MHz RF generator is supplied by the power control unit of the x MHz RF generator and the frequency level is supplied by the tuner of the x MHz RF generator. At the same time, the power level is supplied to the power supply 162 of the y MHz RF generator by the power control unit of the y MHz RF generator and the frequency level is supplied by the tuner of the y MHz RF generator. For example, during the state S3, the frequency level of Fp3 and the power level of Pp3 are supplied to the power supply 160, and at the same time, the frequency level Fs3 and the power level Ps3 are supplied to the power supply 162. To explain further, in the state S3, the frequency level Fp3 and the power level Pp3 are supplied to the power supply 160 within a few minutes of one second before or after the generation of the clock edge of the pulse signal 102. In this example, power level Ps3 and frequency level Fs3 are supplied to power supply 162 during the generation of the clock edge.

Power supply 160 receives the frequency level and power level Pp1 of Fp1 during state S1. Upon receiving levels Fp1 and Pp1, power supply 160 generates RF power at frequency level Fp1, and the RF power has a power level of Pp1. Moreover, power supply 162 receives frequency level Fs1 and power level Ps1 during state S1. Upon receiving levels Fs1 and Ps1, power supply 162 of the y MHz RF generator generates an RF signal having frequency level Fs1 and power level Ps1.

Furthermore, in one embodiment, when the state of the pulse signal 102 is S2, the power control unit 144 does not supply the power level Pp1 to the power supply unit 160, and the power control unit 148 supplies the power level Pp3 to the power. It does not supply to the supply part 160. Also, in this embodiment, the AFT 130 does not supply the frequency level of Fp1 to the power supply 160, and the AFT 134 does not supply the frequency level of Fp3 to the power supply 160. In addition, when the state of the pulse signal 102 is S2, the power control unit 150 does not supply the power level Ps1 to the power supply unit 162, and the power control unit 154 supplies the power level Ps3 to the power supply unit 162. Not supplied Moreover, during the state S2 of the pulse signal 102, the AFT 138 does not supply the frequency level of Fs1 to the power supply 162, and the AFT 142 does not supply the frequency level of Fs3 to the power supply 162. No.

Moreover, power supply 160 receives the frequency level of Fp2 and the power level of Pp2 during state S2. Upon receiving levels Fp2 and Pp2, power supply 160 generates RF power at frequency level Fp2, and the RF power has a power level of Pp2. Moreover, power supply 162 receives frequency level Fs2 and power level Ps2 during state S2. Upon receiving levels Fs2 and Ps2, power supply 162 of the y MHz RF generator generates an RF signal having frequency level Fs2 and power level Ps2.

Also, in one embodiment, when the state of the pulse signal 102 is S3, the power control unit 144 does not supply the power level Pp1 to the power supply unit 160, and the power control unit 146 supplies the power level Pp2. It does not supply to the supply part 160. Also, in this embodiment, the AFT 130 does not supply the frequency level of Fp1 to the power supply 160, and the AFT 132 does not supply the frequency level of Fp2 to the power supply 160. In addition, when the state of the pulse signal 102 is S3, the power control unit 150 does not supply the power level Ps1 to the power supply unit 162, and the power control unit 152 supplies the power level Ps2 to the power supply unit 162. Not supplied Moreover, AFT 138 does not supply the frequency level of Fs1 to power supply 162, and AFT 141 does not supply the frequency level of Fs2 to power supply 162.

Moreover, power supply 160 receives the frequency level and power level Pp3 of Fp3 during state S3. Upon receiving levels Fp3 and Pp3, power supply 160 generates an RF signal having frequency level Fp3 and RF power level Pp3. Moreover, power supply 162 receives frequency level Fs3 and power level Ps3 during state S3. Upon receiving levels Fs3 and Ps3, power supply 162 of the y MHz RF generator generates an RF signal having frequency level Fs3 and power level Ps3.

In one embodiment, during one state, non-supply of the power level to the power supply 160 is made during the remaining state, and at the same time, non-supply of the power level to the power supply 162 is made during the remaining state. For example, in the state S1, the power supply unit 160 by the power control unit 146 during the edge of the pulse signal 102 which is equal to the period during which there is no supply of the power level to the power supply unit 162 by the power control unit 152. There is no supply of power to. As another example, in the state S2, during the edge of the pulse signal 102, which is equal to the period without the supply of the power level to the power supply 162 by the power controllers 150 and 154, by the power controllers 144 and 148 There is no supply of power level to power supply 160. As another example, in the state S3, during the edge of the pulse signal 102, which is equal to the period during which there is no supply of the power level to the power supply unit 162 by the power control units 150 and 152, the power control units 144 and 146 There is no supply of power level to power supply 160 by means of.

In some embodiments, during one state, non-supply of the frequency level to the power supply 160 is made during the remaining state, while simultaneously non-supply of frequency level to the power supply 162 is made during the remaining state. For example, in state S1, to the power supply 160 by the AFT 132 during the edge of the pulse signal 102 which is equal to the period during which there is no supply of the frequency level to the power supply 162 by the AFT 141. There is no supply of frequency levels. As another example, in state S2, the power supply by the AFTs 130 and 134 during the edge of the pulse signal 102 which is equal to the period of no supply of the frequency level to the power supply 162 by the AFTs 138 and 142. There is no supply of frequency levels to 160. As another example, in state S3, the power by the AFTs 130 and 132 during the edge of the pulse signal 102 which is equal to the period of no supply of the frequency level to the power supply 162 by the AFTs 138 and 141. There is no supply of frequency level to supply 160.

In various embodiments, during one state, non-supply of the frequency and power levels to the power supply 160 is made during the remaining state while simultaneously non-supply of frequency and power levels to the power supply 162 during the remaining state. . For example, in the state S1, during the edge of the pulse signal 102 which is equal to the period without the supply of the frequency level by the AFT 141 to the power supply 162 and the supply of the power level by the power supply 152, There is no supply of the frequency level by the AFT 132 to the power supply 160 and no supply of the power level by the power control unit 146.

In various embodiments, during one state, non-supply of the power level to the power supply 160 occurs during the remaining state, while at the same time, non-supply of the power level to the power supply 162 is made during the remaining state. In various embodiments, in one state, non-supply of the frequency level to the power supply 160 is made during the remaining state, while at the same time non-supply of the frequency level to the power supply 162 is made during the remaining state. In various embodiments, in one state, non-supply of frequency and power level to power supply 160 occurs during the remaining state, while at the same time non-supply of frequency and power level to power supply 162 during the remaining state. This is done.

In some embodiments, the power supply, such as the RF power supply, includes a driver coupled to the amplifier. The driver generates an RF signal. The amplifier amplifies the RF signal and supplies forward power of the RF signal to the plasma chamber 104 via the RF cable, impedance matching circuit 106 and the RF transmission line 184. For example, during state S1, the amplifier of power supply 160 is proportional to, for example, the power level Pp1 via RF cable 182, impedance matching circuit 106, and RF transmission line 184. The forward power having the power level and the frequency level Fp1, which is an integer multiple thereof or the like, is supplied to the plasma chamber 104. In this example, during state S1, the amplifier of the power supply 162 receives a power level and a frequency level Fs1 proportional to the power level Ps1 via the RF cable 182, the impedance matching circuit 106, and the RF transmission line 184. The branch supplies forward power to the plasma chamber 104.

As another example, during state S2, the amplifier of power supply 160 is proportional to, for example, the power level Pp2 via RF cable 180, impedance matching circuit 106, and RF transmission line 184. Forward power having a power level and a frequency level Fp2 equal to an integer multiple thereof is supplied to the plasma chamber 104. In this example, during state S2, the amplifier of the power supply 162 receives a power level and a frequency level Fs2 proportional to the power level Ps2 via the RF cable 182, the impedance matching circuit 106, and the RF transmission line 184. The branch supplies forward power to the plasma chamber 104. As another example, during state S3, the amplifier of power supply 160 is proportional to, for example, the power level Pp3 via RF cable 180, impedance matching circuit 106 and RF transmission line 184. And forward power having a power level and a frequency level Fp3 which are integer multiples thereof, to the plasma chamber 104. In this example, during state S3, the amplifier of power supply 162 receives power level and frequency level Fs3 proportional to power level Ps3 via RF cable 182, impedance matching circuit 106 and RF transmission line 184. The branch supplies forward power to the plasma chamber 104.

In one embodiment, during each state S1, S2, and S3, the sensor 210 of the x MHz RF generator is reflected power, which is RF power reflected from the plasma of the plasma chamber 104 on the RF cable 180. ) Moreover, during each state S1, S2, and S3, when forward power is transmitted from the x MHz RF generator to the plasma chamber 104 via the RC cable 180, the sensor 210 returns the forward power on the RF cable 180. Detect. Similarly, during each state S1, S2, and S3, the sensor 212 of the y MHz RF generator senses the reflected power from the plasma of the plasma chamber 104. The reflected power sensed by the sensor 212 is reflected on the RF cable 182 from the plasma of the plasma chamber 104. Moreover, during each state S1, S2, and S3, when forward power is transmitted from the y MHz RF generator to the plasma chamber 104 via the RC cable 182, the sensor 212 receives the forward power on the RF cable 182. Detect.

The analog-to-digital converter (ADC) 220 of the x MHz RF generator converts the forward power signal and the reflected power signal sensed by the sensor 210 from analog form to digital form, and converts the ADC (222) of the y MHz RF generator. ) Converts the forward power signal and the reflected power signal sensed by the sensor 212 from analog to digital form. During each state S1, S2, and S3, the DSP 140 receives the digital value of the reflected power signal, for example magnitude, phase or a combination thereof, and the like, and the forward power signal sensed by the sensor 210 and DSP 153 receives the digital value of the forward power signal and the reflected power signal, which are sensed by sensor 212.

In some embodiments, the digital value of the power signal is the voltage of the power signal, the current of the signal, or a combination of voltage and current. In various embodiments, the digital value of the signal includes the magnitude of the signal and the phase of the signal.

During one or both of states S1, S2, and S3, DSP 140 determines the parameter value, for example, the ratio of the digital reflected power signal and the digital forward power signal from the digital value of the forward and reflected power signal on RF cable 180. , Or calculate the voltage standing wave ratio (VSWR), or the gamma value, or the change in impedance. In some embodiments, a gamma value of 1 indicates a high degree of mismatch between the source and load impedances, and a gamma value of 0 indicates a low degree of mismatch between the source and load impedances. Similarly. The DSP 153 calculates parameter values from the digital values of the forward and reflected power signals on the RF cable 182. In various embodiments, VSWR is calculated to be equal to the ratio of RC-1 and RC + 1, where RC is the reflection coefficient.

In some embodiments, the sensors of the RF generator are voltage and current probes that measure the composite current and the composite voltage delivered through the RF cable between the RF generator and the impedance matching circuit 106. For example, sensor 210 is a voltage and current probe that measures a complex voltage and a complex current passed through RF cable 180 between an x MHz RF generator and an impedance matching circuit 106. As another example, sensor 212 is a voltage and current probe that measures a complex voltage and a complex current passed through RF cable 182 between y MHz RF generator and impedance matching circuit 106. In this embodiment, the parameter value measured by the sensor comprises a change in the plasma's impedance or the impedance of the plasma. The impedance of the plasma is determined by the sensor as the ratio of the composite voltage to the composite current. The change in impedance is determined as the difference between the two impedances of the plasma over a period of time. In some embodiments, the parameter value is determined by the DSP of the AFT, power control or RF generator.

The parameter value for one state is transmitted from the DSP of the RF generator to the AFT in the RF generator associated with that state. For example, parameter values obtained during state S1 are sent from DSP 140 to AFT 130, and parameter values obtained during state S1 are sent from DSP 153 to AFT 138. As another example, parameter values obtained during state S2 are transmitted from DSP 140 to AFT 132, and parameter values obtained during state S2 are transmitted from DSP 153 to AFT 141. As another example, parameter values obtained during state S3 are transmitted from DSP 140 to AFT 134, and parameter values obtained during state S3 are transmitted from DSP 153 to AFT 142.

During one state, the AFT of the RF generator receives parameter values from the DSP, during that state, of the RF generator, and the AFT determines the frequency level associated with the received parameter values. For example, during state S1, AFT 130 determines a frequency level associated with a parameter value received from DSP 140 during state S1, and AFT 138 is received during state S1, received from DSP 153. The frequency level is determined based on the parameter value of. As another example, during state S2, AFT 132 determines a frequency level corresponding to a parameter value received from DSP 140 during state S2, and AFT 141 is received from DSP 153. The frequency level is determined based on the parameter value during S2. As another example, during state S2, AFT 134 determines a frequency level associated with a parameter value received from DSP 140 during state S3, and AFT 142 is received from DSP 153. The frequency level is determined based on the parameter value.

It should be noted that the association, correspondence, mapping, link, etc. between the parameter value and the frequency level is predetermined and stored in the AFT. Similarly, in some embodiments. The association between the parameter value and the power level is predetermined and stored in the power control.

Moreover, during one state, the AFT of the RF generator adjusts the frequency level based on the frequency level generated from the parameter value during that state, and supplies the adjusted frequency level to the power supply of the RF generator. For example, during state S1, AFT 130 adjusts the frequency level during state S1 based on the frequency level associated with the parameter value generated by DSP 140, and transmits the adjusted frequency level to power supply 160. Supply. Furthermore, in this example, during state S1, AFT 138 adjusts frequency level Fs1 during state S1 based on the frequency level corresponding to the parameter value generated by DSP 153, and supplies the adjusted frequency level to the power supply. To 162. As another example, during state S2, AFT 132 adjusts frequency level Fp2 during state S2 based on the frequency level associated with the parameter value generated by DSP 140, and adjusts the adjusted frequency level to power supply 160. ) Furthermore, during state S2, AFT 141 adjusts frequency level Fs2 during state S2 based on the frequency level associated with the parameter value generated by DSP 153, and supplies the adjusted frequency level to power supply 162. do. As another example, during state S3, AFT 134 adjusts frequency level Fp3 during state S3 based on the frequency level associated with the parameter value generated by DSP 140, and adjusts the adjusted frequency level to power supply 160. ) Furthermore, in this example, during state S3, AFT 142 adjusts frequency level Fs3 during state S3 based on the frequency level associated with the parameter value generated by DSP 153, and adjusts the adjusted frequency level to the power supply unit ( 162).

Moreover, during one state, the power control section of the RF generator determines the power level based on a parameter value received from the DSP of the RF generator. For example, during state S1, the power control unit 144 determines the power level based on the parameter value received from the DSP 140, and the power control unit 150 is based on the parameter value received from the DSP 153. Determine the power level. As another example, during state S2, the power control unit 149 determines the power level based on the parameter value received from the DSP 140, and the power control unit 152 based on the parameter value received from the DSP 153. To determine the power level. As another example, during state S3, the power control unit 148 determines the power level based on the parameter value received from the DSP 140, and the power control unit 154 based on the parameter value received from the DSP 153. To determine the power level.

Moreover, during one state, the power control section of the RF generator adjusts the power level of the power supply of the RF generator based on the power level generated based on the parameter value, and supplies the adjusted power level to the power supply. For example, during state S1, the power control unit 144 adjusts the power level Pp1 based on the power level generated from the parameter value during the state S1, and supplies the adjusted power level to the power supply unit 160. In this example, during state S1, the power control unit 150 adjusts the power level Ps1 based on the power level generated from the parameter value during the state S1, and supplies the adjusted power level to the power supply unit 162. As another example, during state S2, the power control unit 146 adjusts the power level Pp2 based on the power level generated from the parameter value during the state S2, and supplies the adjusted power level to the power supply unit 160. In this example, during state S2, power control unit 152 adjusts the power level of Ps2 based on the power level generated from the parameter value during state S2, and supplies the adjusted power level to power supply 162. As another example, during state S3, the power control unit 148 adjusts the power level of Pp3 based on the power level generated from the parameter value during the state S3, and supplies the adjusted power level to the power supply unit 160. . In this example, during state S3, power control unit 154 adjusts the power level of Pp3 based on the power level generated from the parameter value during state S3, and supplies the adjusted power level to power supply 162.

During one state, the power supply of the RF generator generates a power RF signal having an adjusted frequency level for that state received from the AFT of the RF generator and having an adjusted power level for that state received from the power control unit of the RF generator. And supply a power signal to the plasma chamber 104 via the RF cable, impedance matching circuit 106 and RF transmission line 184. For example, during state S1, power supply 160 generates a power signal having an adjusted frequency level received from AFT 130 and having an adjusted power level received from power control 144, and the RF cable 180, a power signal is supplied to the plasma chamber 104 via the impedance matching circuit 106 and the RF transmission line 184. Similarly, in this example, during state S1, power supply 162 generates a power signal having an adjusted frequency level received from AFT 138 and having an adjusted power level received from power control 150. Power signal to the plasma chamber 104 via the RF cable 182, the impedance matching circuit 106 and the RF transmission line 184.

As another example, during state S1, power supply 160 generates a power signal having an adjusted frequency level received from AFT 131 and having an adjusted power level received from power control 146, and the RF cable 180, a power signal is supplied to the plasma chamber 104 via the impedance matching circuit 106 and the RF transmission line 184. Similarly, in this example, during state S2, power supply 162 generates a power signal having an adjusted frequency level received from AFT 141 and having an adjusted power level received from power control 152. Power signal to the plasma chamber 104 via the RF cable 182, the impedance matching circuit 106 and the RF transmission line 184.

As another example, during state S3, power supply 160 generates a power signal having an adjusted frequency level received from AFT 134 and having an adjusted power level received from power control 148, and RF The power signal is supplied to the plasma chamber 104 via the cable 180, the impedance matching circuit 106 and the RF transmission line 184. Similarly, in this example, during state S3, power supply 162 generates a power signal having an adjusted frequency level received from AFT 142 and having an adjusted power level received from power control 154. Power signal to the plasma chamber 104 via the RF cable 182, the impedance matching circuit 106 and the RF transmission line 184.

In one embodiment, a single control is used in place of power control 144 and AFT 130, a single control is used in place of power control 146 and AFT 132, and a single control is in power control. 148 and AFT 134 are used instead. In some embodiments, a single control is used in place of power control 150 and AFT 138, a single control is used in place of power control 152 and AFT 141, and a single control is used in power control ( 154 and AFT 142 are used instead.

In some embodiments, a z MHz RF generator is used in addition to the x and y MHz RF generators in system 100. When the x MHz RF generator is a 2 MHz RF generator and the y MHz RF generator is a 27 MHz RF generator, the z MHz RF generator may be a 60 MHz RF generator. The z MHz RF generator has a structure similar to that of the x or y MHz RF generator, and has a connection similar to that of the x or y MHz RF generator with the components of the system 100 external to the x or y MHz RF generator. . For example, the z MHz RF generator includes three power controls, three AFTs, a DSP, an ADC, a sensor, and a power supply. As another example, the DSP of the z MHz RF generator is coupled with the tool UI 151 to receive the pulse signal 102. As another example, the power supply of the z MHz RF generator is coupled to the lower electrode 120 of the plasma chamber 104 via an RF cable (not shown), an impedance matching circuit 106, and an RF transmission line 184. .

It should be noted that the embodiments described herein are described using three states. In some embodiments, more than three states may be used.

2 is one embodiment of a graph 190 illustrating states S1, S2, and S3. Graph 190 shows time t versus power. Each state S1, S2, and S3 is associated with a logic level. For example, state S1 has a high logic level, state S2 has an intermediate logic level, and state S3 has a low logic level. The high logic level has a higher power level 'a' than the intermediate logic level 'b', which has a higher power level than the low logic level 'c'. As an example, state S1 has a low, medium or high logic level. As an example, state S2 has a low, medium or high logic level. As an example, state S3 has a low, medium or high logic level. In some embodiments, states S1, S2, and S3 represent a step function.

Each state S1, S2 or S3 lasts for the same time range. For example, the time range T1 for the occurrence of state S1 is equal to the time range T2 for the occurrence of state S2 or the time range T3 for the occurrence of state S3. In some embodiments, one state lasts for an unequal time compared to one or more of the remaining states. For example, state S1 lasts for a different time range than state S2, which lasts for a different time range than state S3. In this example, the time range of state S3 may be different from or the same as the time range of state S1. As another example, state S1 lasts for a longer time range than state S2, which lasts for a shorter time range than state S3.

3 is a diagram of one embodiment of a graph 200 showing different time ranges for different states. Graph 200 shows time versus power. States S1 and S2 occur for the same time range and state S3 occurs for a time range different from the time range for state S2 or S3. For example, state S1 occurs for time range t1, state S2 occurs for time range t2, and state S3 occurs for time range t3. The time range t3 is longer than the time range t1 or t2.

In some embodiments, any two of states S1, S2, and S3 occur for the same time range, and the remaining states occur for other time ranges. For example, state S1 occurs for the same time range as the time range for the occurrence of state S3, and the time range for the occurrence is different from the time range for state S2. As another example, state S2 occurs for the same time range as the time range for the occurrence of state S3, and the time range for the occurrence is different from the time range for state S1.

4 is a diagram of one embodiment of a system 210 for selecting one of the AFTs 220, 222, or 224 based on the state of the pulse signal 102 during production. System 210 includes selection logic 226, AFTs 220, 222 and 224, digital clock source 228, plasma chamber 104, impedance matching circuit 106 and power supply 232.

The selection logic 226, the AFTs 220, 222 and 224, and the power supply 232 are implemented inside an x MHz RF generator or a y MHz RF generator. When AFTs 220, 222 and 224 are implemented inside an x MHz RF generator, AFT 220 is an example of AFT 130, AFT 222 is an example of AFT 132, and AFT 224 ) Is an example of AFT 134, and power supply 232 is an example of power supply 160 (FIG. 1). Similarly, when AFTs 220, 222 and 224 are implemented inside a y MHz RF generator, AFT 220 is an example of AFT 138, AFT 222 is an example of AFT 141, AFT 224 is an example of AFT 142, and power supply 232 is an example of power supply 162 (FIG. 1).

Examples of selection logic 226 include a multiplexer. When the selection logic 226 includes a multiplexer, the pulse signal 102 is received at the select input of the multiplexer.

In various embodiments, the selection logic 226 includes a processor. In one embodiment, the selection logic 226 is implemented inside the DSP 140 or the DSP 153.

The digital clock source 228 is used to operate the power supply 228 in synchronization with the digital clock signal generated by the digital clock source 228. In some embodiments, the digital clock signal is synchronized with the pulse signal 102. For example, the digital clock signal has the same phase as the phase of the pulse signal 102. As another example, the phase of the digital clock signal is within a predetermined phase range of the phase of the pulse signal 102. To illustrate the application of the predetermined phase range, the leading edge of the digital clock signal of clock source 228 is a few of a second before or after the leading edge of pulse signal 102.

In one embodiment, instead of the digital clock signal from clock source 228, pulse signal 102 is supplied to power supply 232.

When the pulse signal 102 is in state S1, the selection logic 226 selects the AFT 220. Similarly, selection logic 226 selects AFT 222 when pulse signal 102 is in state S2, and selection logic 226 selects AFT 224 when pulse signal 102 is in state S3. Select. When AFT 220 is selected, AFT 220 supplies frequency level Fp1 to power supply 232. Similarly, when AFT 222 is selected, AFT 222 supplies frequency level Fp2 to power supply 232, and when AFT 224 is selected, AFT 224 supplies frequency level Fp3 to power supply. To 232.

In the embodiment where AFTs 220, 222 and 224 are located inside the y MHz RF generator, when AFT 220 is selected, AFT 220 supplies frequency level Fs1 to power supply 232. Similarly, in these examples, when AFT 222 is selected, AFT 222 supplies frequency level Fs2 to power supply 232 and when AFT 224 is selected, AFT 224 is frequency level. Fs3 is supplied to the power supply unit 232.

In some embodiments, the selection logic 226 selects between power controls instead of the AFTs 220, 222, and 224. For example, the selection logic 226 is coupled with the power controls 144, 146, and 148 of the x MHz RF generator (FIG. 1). In this example, the selection logic 226 selects the power control unit 144 when the pulse signal 102 is in state S1, selects the power control unit 146 when the pulse signal 102 is in state S2, and The power control unit 148 is selected when the pulse signal 102 is in the state S3. As another example, the selection logic 226 is coupled with the power controls 150, 152 and 154 of the y MHz RF generator (FIG. 1). In this example, the selection logic 226 selects the power control unit 150 when the pulse signal 102 is in state S1, selects the power control unit 152 when the pulse signal 102 is in state S2, and The power control section 154 is selected when the pulse signal 102 is in the state S3.

In various embodiments, when the power control unit 144 of the x MHz RF generator is selected during state S1, the power control unit 144 supplies the power level Pp1 to the power supply unit 232, and the power control unit of the x MHz RF generator ( When 146 is selected during state S2, power control unit 146 supplies power level Pp2 to power supply 232. Moreover, when the power control unit 148 of the x MHz RF generator is selected during the state S3, the power control unit 148 supplies the power level Pp3 to the power supply unit 232.

Similarly, in some embodiments, when power control 150 of the y MHz RF generator is selected during state S1, power control 150 supplies power level Ps1 to power supply 232 and the power of y MHz RF generator. When the power control unit 152 is selected during the state S2, the power control unit 152 supplies the power level Ps2 to the power supply unit 232. Moreover, when the power control unit 154 of the y MHz RF generator is selected during the state S3, the power control unit 154 supplies the power level Ps3 to the power supply unit 232.

In many embodiments, the selection logic 226 is implemented inside a z MHz RF generator and functions similarly to the manner described herein. For example, the selection logic 226 selects between the power controls of the z MHz RF generator based on the state of the pulse signal 102, or selects between the AFTs of the z MHz RF generator.

5 shows a system for controlling the frequency and / or power of an RF signal generated by a y MHz RF generator based on a change in the impedance of the plasma inside the plasma chamber 104 and the state of the pulse signal 102 during production. A diagram relating to an embodiment of 200. The DSP 153 of the y MHz RF generator receives the pulse signal 102 from the tool UI 151.

When the pulse signal 102 transitions from state S3 to state S1, the plasma chamber 104 when the x MHz RF generator supplies forward power to the plasma chamber 104 having a power level Pp1 and having a frequency level Fp1. The impedance of the plasma with respect to changes. When the plasma impedance inside the plasma chamber 104 changes as a result of the transition of the pulse signal 102 from the state S3 to the state S1, the sensor 212 causes the complex voltage and the complex current to be transmitted via the RF cable 182. Measure Sensor 212 supplies a measure of the complex voltage and the complex current to ADC converter 222, which converts the measurement from analog format to digital format. The digital values of the measurements of the complex voltage and the complex current are supplied to the DSP 153.

In one embodiment, it should also be noted that the DSP 153 lacks the reception of the pulse signal 102. Rather, in this embodiment, the DSP 153 receives another digital pulse signal that may not be synchronized with the pulse signal 102. In one embodiment, the other digital pulse signal received by the DSP 153 is synchronized with the pulse signal 102.

During the state S1 of the pulse signal 102, for example just after the state transition from the state S3 of the pulse signal 102 to the state S1, etc., the DSP 153 may determine the first parameter from the complex voltage and current measured during the state S1. The value, for example, the square root of the ratio of the digital reflected power signal and the digital forward power signal, the gamma value, the voltage standing wave ratio (VSWR), the change in impedance, and the like are calculated.

DSP 153 determines whether the first parameter value is equal to or greater than the first threshold. When DSP 153 determines whether the first parameter value is equal to or greater than the first threshold, DSP 153 indicates the same to AFT 138 and to power control 150. AFT 138 determines frequency level Fs1 corresponding to the first parameter value that is at least equal to the first threshold, and supplies frequency level Fs1 to power supply 162. Furthermore, the power control unit 150 determines the power level Ps1 corresponding to the first parameter value at least equal to the first threshold value, and supplies the power level Ps1 to the power supply unit 162. For example, AFT 138 stores a table in the memory device that maps a first parameter value with respect to frequency level Fs1, the value of which is at least equal to the first threshold, and power control 150 stores power in the memory device. Store a mapping between the level Ps1 and a first parameter value whose value is at least equal to the first threshold.

On the other hand, when DSP 153 determines that the first parameter value is less than the first threshold, DSP 153 indicates the same to AFT 142 and to power control 154. AFT 142 determines the frequency level Fs3 corresponding to the first parameter value less than the first threshold, and supplies frequency level Fs3 to power supply 162. Further, the power control unit 154 determines the power level Ps3 corresponding to the first parameter value less than the first threshold value, and supplies the power level Ps3 to the power supply 162. For example, AFT 142 stores a table in the memory device that maps a first parameter value with respect to frequency level Fs3, the value of which is less than the first threshold, and power control 154 stores power level in memory device. Store a mapping between Ps3 and a first parameter value whose value is at least less than the first threshold.

When receiving a frequency level, for example, frequency levels Fs1, Fs3, and the like, and a power level, for example Ps1, Ps3, etc., the power supply 162 generates an RF signal having the frequency level and the power level, and RF The RF signal is supplied to the plasma chamber 104 via a cable 182, an impedance matching circuit 106, and an RF transmission line 184. For example, the amplifier of the power supply 162 may have a power level proportional to, for example, a power level that is proportional to, for example, an integer multiple thereof, etc., and forward power having an frequency level Fs1 and an RF cable 182, impedance matching. It is supplied to the plasma chamber 104 via the circuit 106 and the RF transmission line 104.

When the pulse signal 102 transitions from state S1 to state S2, when the x MHz RF generator supplies forward power to the plasma chamber 104 having a power level Pp2 and having a frequency level Fp2, to the plasma chamber 104. The impedance of the plasma changes. When the plasma impedance inside the plasma chamber 104 changes as a result of the transition of the pulse signal 102 from the state S1 to the state S2, the sensor 212 is responsible for the complex voltage and the complex current to be transmitted via the RF cable 182. Measure Sensor 212 supplies a measure of the complex voltage and the complex current to ADC converter 222, which converts the measurement from analog format to digital format. The digital values of the measurements of the complex voltage and the complex current are supplied to the DSP 153.

Moreover, during the state S2 of the pulse signal 102, for example immediately after the state transition from the state S1 of the pulse signal 102 to the state S2, etc., the DSP 153 performs a second operation from the complex voltage and current measured during the state S2. Calculate the parameter value, for example, the square root of the ratio of the digital reflected power signal and the digital forward power signal, the gamma value, the voltage standing wave ratio (VSWR), the change in impedance, and the like.

DSP 153 determines whether the second parameter value is greater than the second threshold. When DSP 153 determines whether the second parameter value is equal to or greater than the second threshold, DSP 153 indicates the same to AFT 141 and to power control 152. AFT 141 determines frequency level Fs2 corresponding to the second parameter value that is at least equal to the second threshold, and supplies frequency level Fs2 to power supply 162. Further, the power control unit 152 determines the power level Ps2 corresponding to the second parameter value at least equal to the second threshold value, and supplies the power level Ps2 to the power supply unit 162. For example, AFT 141 stores a table in the memory device that maps a second parameter value with respect to frequency level Fs2, the value of which is at least equal to a second threshold, and power control 152 stores power within the memory device. Store a mapping between the level Ps2 and a second parameter value whose value is at least equal to the second threshold.

On the other hand, when DSP 153 determines that the second parameter value is less than the second threshold, DSP 153 indicates the same to AFT 138 and to power control 150. AFT 138 determines frequency level Fs1 corresponding to the second parameter value less than the second threshold, and supplies frequency level Fs1 to power supply 162. Further, the power control unit 152 determines the power level Ps2 corresponding to the second parameter value that is less than the second threshold, and supplies the power level Ps2 to the power supply 162. For example, AFT 138 stores a table in the memory device that maps a second parameter value with respect to frequency level Fs1, the value of which is less than a second threshold, and power control 150 stores power level in memory device. Store a mapping between Ps1 and a second parameter value whose value is at least less than the second threshold.

When the pulse signal 102 transitions from state S2 to state S3, when the x MHz RF generator supplies forward power to the plasma chamber 104 having a power level Pp3 and having a frequency level Fp3, the plasma chamber 104. The impedance of the plasma changes. When the plasma impedance inside the plasma chamber 104 changes as a result of the transition of the pulse signal 102 from the state S2 to the state S3, the sensor 212 is responsible for the complex voltage and the complex current to be transmitted via the RF cable 182. Measure Sensor 212 supplies a measure of the complex voltage and the complex current to ADC converter 222, which converts the measurement from analog format to digital format. The digital values of the measurements of the complex voltage and the complex current are supplied to the DSP 153.

Moreover, during the state S3 of the pulse signal 102, for example immediately after the state transition from the state S2 of the pulse signal 102 to the state S3, or the like, the DSP 153 may perform a third operation from the complex voltage and current measured during the state S3. The parameter values, for example, the square root of the ratio of the digital reflected power signal and the digital forward power signal, the gamma value, the voltage standing wave ratio (VSWR), the change in impedance, and the like are calculated.

DSP 153 determines whether the third parameter value is greater than the third threshold. When DSP 153 determines whether the third parameter value is equal to or greater than the third threshold, DSP 153 indicates the same to AFT 142 and to power control 154. AFT 142 determines frequency level Fs3 corresponding to a third parameter value that is at least equal to the third threshold, and supplies frequency level Fs3 to power supply 162. Further, the power control unit 154 determines the power level Ps3 corresponding to the third parameter value less than the third threshold, and supplies the power level Ps3 to the power supply 162. For example, AFT 142 stores a table in the memory device that maps a third parameter value with respect to frequency level Fs3, the value of which is at least equal to a third threshold, and power control 154 stores power within the memory device. Store a mapping between the level Ps3 and a third parameter value whose value is at least equal to the third threshold.

On the other hand, when DSP 153 determines that the third parameter value is less than the third threshold, DSP 153 indicates the same to AFT 141 and to power control 152. AFT 141 determines the frequency level Fs2 corresponding to the third parameter value that is less than the third threshold, and supplies frequency level Fs2 to power supply 162. Further, the power control unit 141 determines the power level Ps2 corresponding to the third parameter value less than the third threshold, and supplies the power level Ps2 to the power supply 162. For example, AFT 141 stores a table in the memory device that maps a third parameter value with respect to frequency level Fs2, the value of which is less than a third threshold, and power control 152 stores power level in memory device. Store a mapping between Ps2 and a third parameter value whose value is at least less than a third threshold.

Use of the parameter value for changing the RF power supplied by the power supply 162 causes plasma stability. In addition, plasma stability is based on real-time measurements of complex voltages and currents. These real-time measurements provide accuracy in stabilizing the plasma.

In an embodiment where a z MHz RF generator is used in addition to using the x and y MHz RF generators, the z MHz RF generator is coupled to the tool UI 151, and the pulse signal 102 is z in the tool UI 151. Transmitted to the MHz RF generator. The z MHz RF generator functions in a similar way to the y MHz RF generator. For example, during one state of pulse signal 102, it is determined whether the parameter value exceeds a threshold. Based on the determination of the parameter value, the power of the first or second level and the frequency of the first or second level are supplied to the power supply of the z MHz RF generator.

In one embodiment, a first threshold, a second threshold, and a third threshold are generated during a training routine, for example a running process. During the training routine, when the x MHz RF generator changes its RF power signal from the first power level to the second power level, one or more portions within the plasma chamber 104, for example, between the plasma and the z MHz RF generator. There is an impedance mismatch at. When one state of the pulse signal changes from S3 to S1, the x MHz RF generator changes the level of its RF power signal from the first power level to the second power level. In this case, when the x MHz RF generator starts powering at its power level Pp1, the y MHz RF generator has its frequency and power tuned. To reduce impedance mismatching, the y MHz RF generator initiates tuning, eg, converging, to the power level and to the frequency level. Convergence may be determined by the DSP 153 based on the reference deviation or other technique. The x MHz RF generator is maintained at the second power level for a longer period than usual, to allow more time for the y MHz RF generator to converge to the frequency level and to the power level. The usual period is the amount of time that impedance mismatching is not reduced, for example not removed.

When the y MHz RF generator converges to a power level and a frequency level, the converged power level is stored in the power control unit 150 as the power level Ps1, and the converged frequency level is stored as the frequency level Fs1 in the AFT 138. Stored. The first threshold is generated from power level Ps1 during the training routine, and the first threshold corresponds to frequency level Fs1. For example, sensor 212 measures the composite voltage and the composite current during the training routine. When the frequency of the y MHz RF generator is Fs1, the sensor 212 measures the complex voltage and the complex current during the training routine. The DSP 153 receives the complex voltage and the complex current and generates a first threshold from the complex voltage and the complex current measured during the training routine.

Similarly, during the training routine, the second and third thresholds are determined by the DSP 153.

FIG. 6 is a diagram of one embodiment of a table 250 that shows a comparison of threshold and impedance changes to determine a frequency level or power level of an RF signal supplied by an RF generator. When the pulse signal changes from state S1 to state S2, it is determined whether the change Δz12 in the impedance of the plasma is greater than the second threshold represented by 'm'. Upon determining that the change in impedance Δz12 is at least equal to the second threshold m, power level Ps2 or frequency level Fs2 is supplied to power supply 162 of the y MHz RF generator. On the other hand, when determining that the change in impedance Δz12 is less than the second threshold m, the power level Ps1 or the frequency level Fs1 is supplied to the power supply 162 of the y MHz RF generator.

Similarly, when the pulse signal changes from state S2 to state S3, it is determined whether the change Δz23 of the impedance of the plasma is greater than the third threshold represented by 'n'. Upon determining that the change in impedance Δz23 is greater than the third threshold n, power level Ps3 or frequency level Fs3 is supplied to power supply 162 of the y MHz RF generator. On the other hand, when determining that the change in impedance Δz23 is less than the third threshold n, the power level Ps2 or the frequency level Fs2 is supplied to the power supply 162 of the y MHz RF generator.

Furthermore, when the pulse signal changes from state S3 to state S1, it is determined whether the change Δz31 of the impedance of the plasma is greater than the first threshold indicated by 'o'. Upon determining that the change in impedance Δz31 is greater than the third threshold o, power level Ps1 or frequency level Fs1 is supplied to power supply 162 of the y MHz RF generator. On the other hand, when determining that the change in impedance Δz31 is less than the first threshold o, the power level Ps3 or the frequency level Fs3 is supplied to the power supply 162 of the y MHz RF generator.

In some embodiments, instead of a change in impedance, another parameter value, such as gamma, VSWR, or the like, may be used to determine the power level and / or frequency level for supplying the power supply 162.

FIG. 7 relates to one embodiment of a system 260 for selecting an AFT 220, 222, or 224 during production, based on whether a parameter value exceeds a threshold and based on the state of the pulse signal 102. Drawing. When the pulse signal 102 is in state S1 and the parameter value measured during state S1 is at least equal to the first threshold, the selection logic 226 selects the AFT 220. On the other hand, when the pulse signal 102 is in state S1 and the parameter value measured during state S1 is less than the first threshold, the selection logic 226 selects the AFT 224.

When the selection logic 226 includes a multiplexer, a signal is received from the DSP 270 at the multiplexer's selection input indicating that the parameter value during the state of the pulse signal 102 is at least equal to or less than the threshold.

DSP 270 is an example of DSP 153 (FIG. 1). Based on the composite current and the composite voltage received from the sensor 272 during state S1, the DSP 270 determines the first parameter value. DSP 270 determines that the first parameter value is at least equal to the first threshold, and supplies a signal indicative of the determination to selection logic 226. Upon receiving a signal indicating that the first parameter value is at least equal to the first threshold, the selection logic 226 selects the AFT 220. On the other hand, the DSP 270 determines that the first parameter value determined during the state S1 of the pulse signal 102 is smaller than the first threshold, and supplies a signal representing the determination to the selection logic 226. Upon receiving a signal indicating that the first parameter value is less than the first threshold, the selection logic 226 selects the AFT 224. Sensor 272 is an example of sensor 212 (FIG. 1) of a y MHz RF generator.

Moreover, based on the complex current and the complex voltage received from the sensor 272 during state S2, the DSP 270 determines the second parameter value. DSP 270 also determines that the second parameter value is at least equal to the second threshold, and supplies a signal indicative of the determination to selection logic 226. Upon receiving a signal indicating that the second parameter value is at least equal to the second threshold, the selection logic 226 selects the AFT 222. On the other hand, the DSP 270 determines that the second parameter value determined during the state S2 of the pulse signal 102 is smaller than the second threshold, and supplies a signal representing the determination to the selection logic 226. Upon receiving a signal indicating that the second parameter value is less than the second threshold, the selection logic 226 selects the AFT 220.

Moreover, based on the complex current and the complex voltage received from the sensor 272 during state S3, the DSP 270 determines the third parameter value. DSP 270 also determines that the third parameter value is at least equal to the third threshold, and supplies a signal indicative of the determination to selection logic 226. Upon receiving a signal indicating that the third parameter value is at least equal to the third threshold, the selection logic 226 selects the AFT 224. On the other hand, the DSP 270 determines that the third parameter value determined during the state S3 of the pulse signal 102 is smaller than the third threshold, and supplies a signal representing the determination to the selection logic 226. Upon receiving a signal indicating that the third parameter value is less than the third threshold, the selection logic 226 selects the AFT 222.

In some embodiments, the selection logic 226 selects between power controls instead of the AFTs 220, 222, and 224. For example, the selection logic 226 is coupled to the power controls 150, 152 and 154 of the y MHz RF generator (FIG. 1). In this example, the selection logic 226 selects the power control 150 when receiving a signal indicating that the first parameter value is at least equal to the first threshold, wherein the first parameter value is less than the first threshold. Selects power control 154 when receiving a signal indicative of the determination. As another example, the selection logic 226 selects the power control unit 152 upon receiving a signal indicating that the second parameter value is at least equal to the second threshold, wherein the second parameter value is greater than the second threshold. The power control unit 150 is selected when receiving a signal indicating a determination to be small. As another example, the selection logic 226 selects the power control unit 154 when receiving a signal indicating that the third parameter value is at least equal to the third threshold, wherein the third parameter value is greater than the third threshold. The power control unit 152 is selected when receiving a signal indicating a determination to be small.

In many embodiments, the selection logic 226 is implemented within a z MHz RF generator and functions in a manner similar to that described herein. For example, the selection logic 226 is between the AFTs of the z MHz RF generator or the power control of the z MHz RF generator based on the state of the pulse signal 102 and based on whether the parameter value exceeds a threshold. Choose between them.

8A is a diagram of one embodiment of graphs 302, 304, 306, and 308. Each graph 302, 304, 306 and 308 shows the power value in kilowatts (kW) as a function of time t. As shown in graph 302, the 2 MHz power signal, which is the power signal supplied by the 2 MHz power supply, has a power value of a4 during states S1 and S2, and a power value of zero during state S3. Further, the 60 MHz power signal, which is the power signal supplied by the 60 MHz power supply, has a power value of a1 during state S1, a power value of a2 during state S2, and a power value of a4 during state S3. The power value of a4 is greater than the power value of a3, which is greater than the power value of a2. The power value of a2 is greater than the power value of a1, which is greater than zero.

As shown in graph 304, the 60 MHz power signal has a power value a0 during state S3. The power value of a0 is smaller than the power value of a1. Moreover, as shown in graph 306, the 60 MHz signal has a power value of a2 during state S1, a power value of a1 during state S2, and a power value of a3 during state S3. As shown in graph 308, the 60 MHz signal has a power value of a2 during state S1, a power value of a1 during state S2, and a power value of a0 during state S3.

8B is a diagram of one embodiment of graphs 310, 312, 314, and 316. Each graph 310, 312, 314 and 316 shows the power value in kW as a function of time t. As shown in graph 310, the 60 MHz signal has a power value of a1 during state S1, a power value of a2 during state S2, and a power value of a2 during state S3.

As shown in graph 312, the 60 MHz signal has a power value of a1 during state S1, a power value of a2 during state S2, and a power value of a1 during state S3. Furthermore, as shown in graph 314, the 60 MHz signal has a power value of a2 during state S1, a power value of a1 during state S2, and a power value of a1 during state S3. As shown in graph 316, the 60 MHz signal has a power value of a2 during state S1, a power value of a1 during state S2, and a power value of a2 during state S3.

9A is a diagram of one embodiment of graphs 320, 322, 324, and 326. Each graph 320, 322, 324 and 326 shows the power value in kW as a function of time t. As shown in graph 320, the 60 MHz signal has a power value of a1 during state S1, a power value of a2 during state S2, and a power value of a3 during state S3. Moreover, in graph 320, the 2 MHz power signal has a power value of a4 during state S1, a power value of a4 during state S2, and a power value of a0 during state S3. The power value of a0 is less than the power value of a1 and is greater than zero.

Furthermore, as shown in graph 322, the 60 MHz signal has a power value of a2 during state S1, a power value of a3 during state S2, and a power value of a1 during state S3. As shown in graph 324, the 60 MHz signal has a power value of a2 during state S1, a power value of a1 during state S2, and a power value of a3 during state S3. Moreover, as shown in graph 326, the 60 MHz signal has a power value of a3 during state S1, a power value of a2 during state S2, and a power value of a1 during state S3.

9B is a diagram of one embodiment of graphs 328, 330, 332, and 334. Each graph 328, 330, 332 and 334 shows the power value in kW as a function of time t. As shown in graph 328, the 60 MHz signal has a power value of a2 during state S1, a power value of a3 during state S2, and a power value of a3 during state S3. Furthermore, in graph 330, the 60 MHz signal has a power value of a2 during state S1, a power value of a3 during state S2, and a power value of a2 during state S3. Furthermore, in graph 330, the 60 MHz signal has a power value of a2 during state S1, a power value of a1 during state S2, and a power value of a1 during state S3. Also, in graph 334, the 60 MHz signal has a power value of a2 during state S1, a power value of a1 during state S2, and a power value of a2 during state S3.

10A is a diagram of one embodiment of graphs 336, 338, 340, and 342. Each graph 336, 338, 340 and 342 shows the power value in kW as a function of time t. In graph 330, the 27 MHz power signal, which is the power signal supplied by the 27 MHz power supply, has a power value of a31 during states S1, S2, and S3. The power value of a31 is larger than the power value of a3 and smaller than the power value of a4. The remainder of graph 336 is similar to graph 302 (FIG. 8A).

As shown in each graph 338, 340 and 342, the 27 MHz power signal has a power value of a31 during states S1, S2 and S3. Moreover, the remainder of graph 338 is similar to graph 304 (FIG. 8A), the remainder of graph 340 is similar to graph 306 (FIG. 8A), and the remainder of graph 342 is graph 308 (FIG. Similar to 8a).

In some embodiments, the power value a31 is between zero and a4.

10B is a diagram of one embodiment of graphs 344, 346, 348, and 350. Each graph 344, 346, 348 and 350 shows the power value in kW as a function of time t. As shown in graph 344, the 27 MHz power signal, which is the power signal supplied by the 27 MHz power supply, has a power value of a31 during states S1, S2, and S3. The remainder of graph 344 is similar to graph 310 (FIG. 8B).

As shown in each graph 346, 348 and 350, the 27 MHz power signal has a power value of a31 during states S1, S2 and S3. Moreover, the remainder of graph 346 is similar to graph 312 (FIG. 8B), the remainder of graph 348 is similar to graph 314 (FIG. 8B), and the remainder of graph 350 is graph 316 (FIG. Similar to 8b).

11A is a diagram of one embodiment of graphs 352, 354, 356, and 358. Each graph 352, 354, 356, and 358 shows the power value in kW as a function of time t. As shown in graph 352, the 27 MHz power signal, which is the power signal supplied by the 27 MHz power supply, has a power value of a31 during states S1, S2, and S3. The remainder of graph 352 is similar to graph 320 (FIG. 9A).

As shown in each graph 354, 356, and 358, the 27 MHz power signal has a power value of a31 during states S1, S2, and S3. Moreover, the remainder of graph 354 is similar to graph 322 (FIG. 9A), the remainder of graph 356 is similar to graph 324 (FIG. 9A), and the remainder of graph 358 is graph 326 (FIG. Similar to 9a).

11B is a diagram of one embodiment of graphs 360, 362, 364, and 366. Each graph 360, 362, 364 and 366 shows the power value in kW as a function of time t. As shown in each graph 360, 362, 364 and 366, the 27 MHz power signal has a power value of a31 during states S1, S2 and S3. The remainder of graph 360 is similar to graph 328 (FIG. 9B). Moreover, the remainder of graph 362 is similar to graph 330 (FIG. 9B), the remainder of graph 364 is similar to graph 332 (FIG. 9B), and the remainder of graph 366 is graph 326 (FIG. Similar to 9b).

12A is a diagram of one embodiment of graphs 368, 370, 372, and 374. Each graph 368, 370, 372 and 374 shows the power value in kW as a function of time t. As shown in each of the graphs 368, 370, 372 and 374, the 27 MHz power signal has a power value of a32 during states S1, S2 and S3. The remainder of graph 368 is similar to graph 302 (FIG. 8A). Moreover, the remainder of graph 370 is similar to graph 304 (FIG. 8A), the remainder of graph 372 is similar to graph 306 (FIG. 8A), and the remainder of graph 374 is graph 308 (FIG. Similar to 8a).

12B is a diagram of one embodiment of graphs 376, 378, 380, and 382. Each graph 376, 378, 380 and 382 shows the power value in kW as a function of time t. As shown in each graph 376, 378, 380 and 382, the 27 MHz power signal has a power value of a31 during states S1 and S2 and a power value of a32 during state S3. The power value of a32 is greater than the power value a31. The remainder of graph 376 is similar to graph 310 (FIG. 8B). Moreover, the remainder of graph 378 is similar to graph 312 (FIG. 8B), the remainder of graph 380 is similar to graph 314 (FIG. 8B), and the remainder of graph 382 is graph 316 (FIG. Similar to 8b).

13A is a diagram of one embodiment of graphs 384, 386, 388, and 390. Each graph 384, 386, 388 and 390 shows the power value in kW as a function of time t. As shown in graph 384, the 27 MHz power signal has a power value of a31 during states S1 and S2 and a power value of a32 during state S3. The remainder of graph 384 is similar to graph 320 (FIG. 9A). Moreover, the remainder of graph 386 is similar to graph 322 (FIG. 9A), the remainder of graph 388 is similar to graph 324 (FIG. 9A), and the remainder of graph 390 is graph 326 (FIG. Similar to 9a).

13B is a diagram of one embodiment of graphs 392, 394, 396, and 398. Each graph 392, 394, 396 and 398 shows the power value in kW as a function of time t. As shown in each of the graphs 392, 394, 396 and 398, the 27 MHz power signal has a power value of a31 during states S1 and S2 and a power value of a32 during state S3. The remainder of graph 392 is similar to graph 328 (FIG. 9B). Moreover, the remainder of graph 394 is similar to graph 330 (FIG. 9B), the remainder of graph 396 is similar to graph 332 (FIG. 9B), and the remainder of graph 398 is graph 334 (FIG. Similar to 9b).

14A is a diagram of one embodiment of graphs 402, 404, 406, and 408. Each graph 402, 404, 406 and 408 shows the power value in kW as a function of time t. As shown in each graph 402, 404, 406 and 408, the 27 MHz power signal has a power value of a32 during states S1 and S2 and a power value of a31 during state S3. The remainder of graph 402 is similar to graph 302 (FIG. 8A). Moreover, the remainder of graph 404 is similar to graph 304 (FIG. 8A), the remainder of graph 406 is similar to graph 306 (FIG. 8A), and the remainder of graph 408 is graph 308 (FIG. Similar to 8a).

14B is a diagram of one embodiment of graphs 410, 412, 414, and 416. Each graph 410, 412, 414 and 416 shows the power value in kW as a function of time t. As shown in each graph 410, 412, 414 and 416, the 27 MHz power signal has a power value of a32 during states S1 and S2 and a power value of a31 during state S3. The remainder of graph 410 is similar to graph 310 (FIG. 8B). Moreover, the remainder of graph 412 is similar to graph 312 (FIG. 8B), the remainder of graph 414 is similar to graph 314 (FIG. 8B), and the remainder of graph 416 is graph 316 (FIG. Similar to 8b).

15A is a diagram of one embodiment of graphs 418, 420, 422, and 424. Each graph 418, 420, 422 and 424 shows the power value in kW as a function of time t. As shown in graph 418, the 27 MHz power signal has a power value of a32 during states S1 and S2 and a power value of a31 during state S3. The remainder of graph 410 is similar to graph 320 (FIG. 9A). Moreover, the remainder of graph 420 is similar to graph 322 (FIG. 9A), the remainder of graph 422 is similar to graph 324 (FIG. 9A), and the remainder of graph 424 is graph 326 (FIG. Similar to 9a).

15B is a diagram of one embodiment of graphs 426, 428, 430, and 432. Each graph 426, 428, 430 and 432 shows the power value in kW as a function of time t. As shown in each graph 426, 428, 430 and 432, the 27 MHz power signal has a power value of a32 during states S1 and S2 and a power value of a31 during state S3. The remainder of graph 426 is similar to graph 328 (FIG. 9B). Moreover, the remainder of graph 428 is similar to graph 330 (FIG. 9B), the remainder of graph 430 is similar to graph 332 (FIG. 9B), and the remainder of graph 432 is graph 334 (FIG. Similar to 9b).

Although the embodiments described above have been described with respect to a parallel plate plasma chamber, in one embodiment, the embodiments described above include a plasma chamber of another type, for example an inductively coupled plasma (ICP) reactor. It should be noted that the present invention can be applied to a chamber, a plasma chamber including an electron-cyclotron resonance (ECR) reactor, and the like. For example, power supplies 160 and 162 are coupled to an inductor inside the ICP plasma chamber.

Although the embodiments described above relate to supplying the 2 MHz RF signal and / or the 60 MHz RF signal and / or the 27 MHz RF signal to the lower electrode 120 and the grounded upper electrode 122, in various embodiments It should be noted that the 2 MHz, 60 MHz, and 27 MHz signals can be supplied to the upper electrode 122 while the lower electrode 120 is grounded.

In one embodiment, the operations performed by the power control of the AFT and / or RF generator are performed by the DSP of the RF generator. For example, the operations described herein, as performed by AFTs 130, 312, and 134, are performed by DSP 140 (FIG. 1). As another example, the operations described herein, as performed by AFT 138, AFT 141, AFT 142, power control 150, power control 152, and power control 154, may be performed. Performed by the DSP 153 (FIG. 1).

Embodiments described herein may be practiced with various computer system configurations, including hand-held devices, microprocessor systems, microprocessor-based or programmable computer electronics, microcomputers, mainframe computers, and the like. Can be. Embodiments may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a network.

In considering the above embodiments, it should be understood that the embodiments may employ various computer-implemented operations involving data stored in a computer system. These operations are those requiring physical manipulations of physical quantities. Any of the operations described herein that form part of the embodiments are useful machine operations. Embodiments also relate to a device or apparatus that performs these operations. The apparatus may be specifically configured for a particular purpose computer. When defined as a computer for a particular purpose, the computer can still perform operations for a particular purpose, and can also perform program execution, routines, or other processing that are not part of the specific purpose. Alternatively, the operations may be processed by a general purpose computer that is selectively activated, or may be configured by one or more computer programs stored in computer memory, cache, or obtained on a network. When data is acquired on the network, the data can be processed by another computer on the network, for example a cloud of computing resources.

One or more embodiments may also be fabricated as computer readable code on a non-transitory computer readable medium. The computer readable medium is any data storage device, such as a memory device, that can store data that can later be read by a computer system. Examples of computer readable media include hard drives, network attached storage (NAS), ROM, RAM, compact disk-ROMs (CD-ROMs), recordable-CDs (CD-Rs), rewritable-CDs (CD- RWs), magnetic tape and optical greek non-optical data storage devices. Computer-readable media may include computer-readable tangible media distributed over a network-coupled computer system such that the computer-readable code is stored and executed in a distributed fashion.

Although the method operations have been described for a particular purpose, as long as the processing of the overlay operations is performed in a desired manner, housekeeping operations may be performed between the operations, or they may be adjusted to occur at slightly different times, Or may be distributed in a system that allows the generation of processing operations at various intervals associated with processing.

One or more features from any of the embodiments may be combined with one or more features of any other embodiments without departing from the scope of the objectives described in the various embodiments described herein.

Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it is apparent that certain changes and modifications may be made within the scope of the appended claims. Accordingly, the embodiments of the invention should be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims. .

Claims (26)

A plasma processing system,
A primary generator comprising three primary power controls, each of the primary power controls being configured to have a predefined power setting;
A secondary generator comprising three secondary power controls, each of the secondary power controls being configured to have a predefined power setting; And
A control circuit connected as an input to each of said primary generator and said secondary generator,
The control circuit is configured to generate a pulse signal, the pulse signal being defined to include three states defining a cycle that is repeated during operation for a plurality of cycles, each state being the first of the three primary power controls. And selecting second, or third, and also selecting first, second, or third of the three secondary power controls. The method of claim 1,
The primary generator includes three primary automatic frequency tuners (AFTs), each of the primary AFTs is configured to have a predefined frequency setting, the secondary generators include three secondary AFTs, and each of the secondary AFTs is Configured to have a predefined frequency setting, each state selecting the first, second, or third of the three primary AFTs, and also the first, second, or three of the three secondary AFTs. And define a second one. The method of claim 1,
The primary generator comprises a primary radio frequency (RF) generator and the secondary generator comprises a secondary RF generator. The method of claim 1,
Wherein the primary power control is part of a processor of the primary generator and the secondary power control is part of a processor of the secondary generator. The method of claim 1,
The pulse signal is a digital pulse signal. The method of claim 1,
The operation includes operation of a primary RF generator and a secondary RF generator. A plasma system configured for operation using multiple states,
A primary radio frequency (RF) generator for receiving a pulse signal, the pulse signal having three or more states, wherein the three or more states include a first state, a second state, and a third state, and the primary RF generator Is coupled to the plasma chamber via an impedance matching circuit;
A secondary RF generator for receiving the pulse signal, the secondary RF generator including the secondary RF generator, coupling to the plasma chamber via the impedance matching circuit,
Each of the primary RF generator and the secondary RF generator is configured to determine whether the pulse signal is in the first state, the second state, or the third state,
The primary RF generator is configured to supply an RF signal having a first primary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in the first state,
The secondary RF generator is configured to supply an RF signal having a first secondary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in the first state,
The primary RF generator is configured to supply an RF signal having the first quantitative level to the impedance matching circuit in response to determining that the pulse signal is in the second state,
The secondary RF generator is configured to supply an RF signal having a second secondary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in the second state,
The primary RF generator is configured to supply an RF signal having a second primary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in the third state,
The secondary RF generator is configured to supply an RF signal having a third secondary quantitative level to the impedance matching circuit in response to determining that the pulse signal is in the third state. The method of claim 7, wherein
Wherein said first state and said second state are associated with a same power level of said primary RF generator. The method of claim 7, wherein
Wherein said first state, said second state, and said third state are associated with different power levels of said primary RF generator. The method of claim 7, wherein
Wherein the first state occurs during a time period equal to a time period relating to the occurrence of the second state. The method of claim 7, wherein
Wherein the first state occurs during a time range that is not equal to the time range for the occurrence of the second state. The method of claim 7, wherein
Wherein the second state occurs for a same time range as the time range for the occurrence of the third state. The method of claim 7, wherein
Wherein the second state occurs during a time range not equal to the time range for the occurrence of the third state. The method of claim 7, wherein
Wherein the first primary quantitative level, the second primary quantitative level, the first secondary quantitative level, the second secondary quantitative level and the third secondary quantitative level are power levels. The method of claim 7, wherein
The first primary quantification level, the second primary quantification level, the first secondary quantification level, the second secondary quantification level and the third secondary quantification level are frequency levels. A plasma system configured to operate based on a number of states, the plasma system comprising:
A primary radio frequency (RF) generator for receiving a pulse signal, the pulse signal having three or more states, wherein the three or more states include a first state, a second state, and a third state, and the primary RF generator Is coupled to the plasma chamber via an impedance matching circuit;
A secondary RF generator coupling to the plasma chamber through the impedance matching circuit;
The primary RF generator determines whether the pulse signal is in the first state, the second state, or the third state,
The primary RF generator is configured to strike a plasma by supplying an RF signal having a first primary quantitative level to a plasma chamber in response to determining that the pulse signal is in the first state,
The primary RF generator is configured to supply an RF signal having the first primary quantitative level to the plasma chamber in response to determining that the pulse signal is in the second state,
The primary RF generator is configured to supply an RF signal having a second primary quantitative level to the plasma chamber in response to determining that the pulse signal is in the third state,
The secondary RF generator determines whether a parameter associated with the plasma exceeds a first threshold,
The secondary RF generator is configured to supply an RF signal having a first secondary quantitative level in response to determining that the parameter associated with the plasma does not exceed the first threshold,
And the secondary RF generator is configured to supply an RF signal having a second secondary quantitative level in response to determining that a parameter associated with the plasma exceeds the first threshold. 17. The method of claim 16,
The secondary RF generator determines whether the pulse signal transitions from the third state to the first state,
When a transition from the third state to the first state occurs, the secondary RF generator determines whether a parameter associated with the plasma exceeds the first threshold. The method of claim 17,
The secondary RF generator determines whether the pulse signal transitions from the first state to the second state,
When a transition from the first state to the second state occurs, the secondary RF generator determines whether a parameter associated with the plasma exceeds a second threshold,
The secondary RF generator is configured to supply an RF signal having the second secondary quantitative level in response to determining that the parameter associated with the plasma does not exceed the second threshold,
And the secondary RF generator is configured to supply an RF signal having a third secondary quantitative level in response to determining that the parameter associated with the plasma exceeds the second threshold. The method of claim 18,
The secondary RF generator determines whether the pulse signal transitions from the second state to the third state,
When a transition from the second state to the third state occurs, the secondary RF generator determines whether a parameter associated with the plasma exceeds a third threshold,
The secondary RF generator is configured to supply an RF signal having the third secondary quantitative level in response to determining that the parameter associated with the plasma does not exceed the third threshold,
And the secondary RF generator is configured to supply an RF signal having the first secondary quantitative level in response to determining that the parameter associated with the plasma exceeds the third threshold. 17. The method of claim 16,
And the first and second primary quantification levels are power levels. 17. The method of claim 16,
And the first and second primary quantification levels are frequency levels. 17. The method of claim 16,
Wherein the first state occurs for a time range equal to the time range for the occurrence of the second state. 17. The method of claim 16,
Wherein the first state occurs during a time range that is not equal to the time range for the occurrence of the second state. 17. The method of claim 16,
The parameter associated with the plasma includes a change in impedance of the plasma, or a gamma value associated with the plasma, or a ratio of voltage standing waves associated with the plasma, or a combination thereof. As a plasma method,
Receiving a pulse signal, performed by a processor,
Receiving the pulse signal, performed by a secondary processor,
Determining whether the pulse signal, performed by a primary processor, is in a first state, a second state, or a third state,
The pulse signal being performed by the secondary processor in the first state. Or determining whether in the second state or the third state,
Supplying a first radio frequency (RF) signal of a first primary quantitative level to a primary power supply in response to determining that the pulse signal is in the first state, performed by the primary processor;
Supplying a second RF signal of a first secondary quantitative level to a secondary power supply in response to determining that the pulse signal is in the first state, performed by the secondary processor;
Supplying to the primary power supply a first RF signal of the first primary quantitative level in response to determining that the pulse signal is in the second state, performed by the primary processor;
Supplying to the secondary power supply the second RF signal of a second secondary quantitative level in response to determining that the pulse signal is in the second state, performed by the secondary processor;
Supplying the first RF signal of a second primary quantitative level to the primary power supply in response to determining that the pulse signal is in the third state, performed by the primary processor, and
Supplying the second RF signal of a third secondary quantitative level to the secondary power supply in response to determining that the pulse signal is in the third state, performed by the secondary processor. The method of claim 25,
Wherein the first state occurs for a time range equal to the time range for the occurrence of the second state.

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