201038143 六、發明說明: 【發明所屬之技術領域】 本發明是有關藉由高頻電力來使處理氣體電漿化,藉 由此電漿來對被處理體實施蝕刻等的處理之電漿處理裝置 ,特別是有關變更此電漿處理裝置的裝置狀態的技術。 【先前技術】[Technical Field] The present invention relates to a plasma processing apparatus for plasma-treating a processing gas by high-frequency power, thereby performing etching or the like on the object to be processed by the plasma. In particular, a technique for changing the state of the device of the plasma processing apparatus. [Prior Art]
0 在半導體裝置或液晶顯示裝置等的平板顯示器(FPD :Flat Panel Display )的製造工程中,是利用對半導體 晶圓或玻璃基板等的被處理體實施蝕刻處理的電漿蝕刻裝 置、或實施成膜處理的電漿CVD裝置等的電漿處理裝置 〇 例如對平行平板型的電極施加高頻電力,藉由形成於 此電極間的電容耦合電漿來進行被處理體的蝕刻之蝕刻裝 置中,是在上下對向設置的電極的一方側,例如兼作被處 Q 理體的載置台使用的下部側的電極(下部電極)連接電漿 形成用(以下稱爲源極用)的高頻電源而作爲陰極電極, 且在此下部電極連接偏壓用的高頻電源者爲人所知。偏壓 用的高頻電源是在於實現供給電力的任務,該電力是爲了 將電漿中的離子引進被處理體側而確保蝕刻的各向異性, 或防止異常放電的發生。 在如此的蝕刻處理裝置的起動時,是由上述的各高頻 電源來對下部電極開始高頻電力的供給,藉此在平行平板 型的電極間形成電漿,但此時若大電力被短時間施加,則 -5- 201038143 例如設於高頻電源與下部電極之間的整合電路的匹配未能 取得,會發生從下部電極側朝向各高頻電源的反射波。此 反射波是成爲形成安定的電漿時的障礙,造成蝕刻裝置的 起動花費長時間的要因,因此例如將來自源極側或偏壓側 的高頻電源的電力供給分割成複數階段,而慢慢地施加電 力,藉此縮小起動時發生的反射波之技術爲人所知(例如 參照專利文獻1 )。 圖1 〇是模式性地顯示從源極側、偏壓側的各高頻電 源來對下部電極施加電力之以往的順序的一例,本例爲了 抑制反射波的影響,而將來自源極側、偏壓側的各個高頻 電源的電力供給例如分成2階段進行。圖1 0 ( a )、圖10 (c )是表示在各高頻電源接受從總括蝕刻處理裝置全體 的動作控制之上位電腦(控制部)傳送的起動訊號( ΟΝ/OFF訊號)的時序。又,圖i〇(b)、圖10(d)是表 示從各高頻電源供給至下部電極的高頻電力(各圖中以實 線表示)及從下部電極側朝向各高頻電源傳播的反射波的 電力(以虛線表示)的各電力値的歷時變化。圖10(a) ~ 圖1 0 ( d )的各圖的橫軸是表示時間。 根據以往的電力供給順序,若各高頻電源在時刻T ! 由控制部來接收起動訊號,則有關源極側的高頻電源是待 機’不開始施加電力至下部電極,另一方面,偏壓側的高 頻電源是慢慢地提高施加電力至比製程時的電力値更低的 預定電力値(以下稱爲第i段的電力)爲止。此時,雖在 偏壓側的高頻電源有發生於電極側的反射波傳播而來,但 -6 - 201038143 藉由階段性地進行高頻電力的施加,反射波所具有的電力 也會比較小’因此在反射波藉由整合電路的作用而短時是 例如以1秒~ 2秒程度衰減。 · 而且,來自偏壓側的高頻電源的施加電力到達第1段 的電力,從已述的時刻T 1經過預定的時間,而預料偏壓 側的反射波會充分地衰減的時刻τ2,此次是由源極側的高 頻電源來開始第1段的電力施加。此時,包含已經開始電 0 力供給的偏壓側,在源極側、偏壓側雙方的高頻電源,反 射波會傳播而來,但有關該等的反射波也是藉由整合電路 的作用而將衰減。 如此一來預先設定反射波至充分地衰減的匹配完了的 時間間隔,例如在從高頻電力的施加開始時刻Τ 1經過各 個設定時間的時刻τ2〜τ4,例如在偏壓側施加第1段的電 力(時刻T i )—在源極側施加第1段的電力(時刻τ2) Θ在偏壓側施加製程時的電力(時刻Τ3 ) Θ在源極側施加 Q 製程時的電力(時刻τ4 ),使偏壓側與源極側的高頻電力 交替階段性地增大,藉此來抑制反射波的影響,且儘可能 短時間起動蝕刻處理裝置的電力供給順序會被採用。 可是在以FPD用的玻璃基板作爲被處理體的蝕刻處理 等中,因爲近年的玻璃基板的大型化,會產生需要處理例 如長邊達2m的被處理體,有關兼作被處理體的載置台使 用的下部電極也會非常大型化。 一旦下部電極大型化,則形成電漿的空間也會變大, 因此隨著電漿形成等所必要的電力增大,反射波所持的電 201038143 力也會變大,極端的情形,至匹配的完了需要1 0秒以上 的時間。因此’如已述般’例如就每數秒提高施加電力的 電力供給順序而百’例如圖10(b)、圖1 〇 ( d )的時刻 丁4所示般,在之前的步驟發生的反射波衰減之前便開始其 次的步驟的電力供給’反射波會重疊地傳播於蝕刻裝置的 電路內,不容易衰減,會有無法形成安定的電漿等的問題 〇 爲了迴避如此的麻煩’可考量將時刻τ2〜τ4的間隔取 較以往更長’充分地確保匹配的時間。但匹配所必要的時 間不是一定’即使下部電極爲大型化時,也會有例如以i 秒〜2秒程度完成匹配的情形’若一樣拉長提高供給電力的 歩驟間隔,則儘管匹配完了’不前進至其次的步驟的等待 時間(在圖10(d)中顯示△“、△“)會增加,造成軸刻 處理裝置的起動時間不必要地長時間化的憂慮高。 於是例如在專利文獻2、專利文獻3中記載有以電力 計等來監視反射波的電力,確認其値形成比預定的臨界値 更小的情形之後施加其次的步驟的電力之技術。 在如此專利文獻1 ~專利文獻3中個別地記載有階段性 施加高頻電力之技術或一邊監視隨著高頻電力的施加而發 生的反射波’一邊施加其次的步驟的高頻電力之技術。然 而有關例如圖1 〇所示那樣階段性地施加源極側、偏壓側 的高頻電力時之最適的電力供給順序或適合於此順序的裝 置構成方面未有任何揭示。 〔專利文獻1〕再表WO99/11103號公報;第11頁第 201038143 4行〜第16行、第2圖 〔專利文獻2〕特開2007-2 1 45 89號公報;第005 9段 落~第0061段落、第15圖 '第16圖 〔專利文獻3〕特開2007- 1 25 5 5號公報;第〇〇28段 落〜第0029段落、桌2圖 【發明內容】 ^ (發明所欲解決的課題) ❹ 本發明是有鑑於如此的情事而硏發者,其目的是在於 提供一種安定且短時間可變更裝置的狀態之電漿處理裝置 及電槳處理裝置的運轉方法。 (用以解決課題的手段) 本發明的電漿處理裝置,係具有干預處理容器內的電 漿之輸出高頻的複數個高頻電源,藉由電漿來對上述處理 Q 容器內的被處理體進行處理,爲了變更裝置的狀態而使該 等複數個高頻電源的輸出電力階段性地變化之電漿處理裝 置,其特徵係具備: 高頻電源單元,其係按各高頻電源設置,包含高頻電 源及控制該高頻電源的輸出之電力控制部及計測被反射於 該高頻電源的反射波的電力値之反射波計測手段;及 判斷各高頻電源的反射波的計測電力値是否形成臨界 値以下的手段;以及 有關使輸出電力變化的一高頻電源,在其他的高頻電 -9 - 201038143 源的反射波的計測電力値形成臨界値以下之後,經過預先 設定的時間時將用以使該一高頻電源的輸出電力變化的時 序訊號賦予上述電力控制部的手段。 在此,上述裝置的狀態的變更,係電漿的升起,且使 上述輸出電力變化,係1階段增大輸出電力爲合適。 又,上述時序訊號,係於其他的高頻電源的反射波的 計測電力値爲形成臨界値以下的條件及上述一高頻電源的 反射波的計測電力値爲臨界値以下的條件之兩條件成立後 ,經過預先設定的時間時產生爲理想。 又,設有訊號傳送路,其係連接於各高頻電源單元之 間,用以在各高頻電源單元彼此之間直接進行反射波的計 測電力値或由該計測電力値爲臨界値以下的判斷訊號所構 成的反射波資訊的傳送, 將上述時序訊號賦予上述電力控制部的手段亦可包含 :設於各高頻電源單元,根據從上述訊號傳送路傳送的其 他高頻電源的反射波資訊來產生上述時序訊號的手段。 又’將上述時序訊號賦予上述電力控制部的手段係包 含:判斷自己的高頻電源的反射波的計測電力値是否形成 臨界値以下的手段、及根據此手段的判斷結果及從上述訊 號傳送路傳送的其他高頻電源的反射波資訊來產生上述時 序訊號的手段爲理想。 而且’判斷高頻電源的反射波的計測電力値是否形成 臨界値以下的手段及產生上述時序訊號的手段係藉由邏輯 電路所構成者爲合適。 -10- 201038143 又,其他發明的電漿處理裝置的運轉方法,係具有干 預處理容器內的電漿之輸出高頻的複數個高頻電源,藉由 電漿來對上述處理容器內的被處理體進行處理,爲了變更 裝置的狀態而使該等複數個高頻電源的輸出電力階段性地 變化之電漿處理裝置的運轉方法,其特徵係具備: 計測各高頻電源的反射波的電力値之工程: 判斷使輸出電力變化的一高頻電源以外的其他高頻電 源的反射波的計測電力値是否爲臨界値以下之工程;及 在判斷上述其他的高頻電源的反射波的計測電力値爲 形成臨界値以下之後,經過預先設定的時間時使該一高頻 電源的輸出電力變化之工程。 在此,上述裝置的狀態的變更,係電漿的升起,且使 上述輸出電力變化,係1階段增大輸出電力爲合適。 並且此時,具備:判斷上述一高頻電源的反射波的計 測電力値是否爲臨界値以下的工程, 使上述一高頻電源的輸出電力變化的工程,係於上述 其他的高頻電源的反射波的計測電力値爲形成臨界値以下 的條件及上述一高頻電源的反射波的計測電力値爲臨界値 以下的條件之兩條件成立後,經過預先設定的時間時進行 爲理想。 〔發明的效果〕 若根據本發明,則在裝置的狀態的變更時使複數的高 頻電源的輸出電力階段性地變化的電漿處理裝置中,有關 -11 - 201038143 使輸出電力變化的一高頻電源’是在其他的高頻電源的反 射波的計測電力値形成臨界値以下之後’經過預先設定的 時間時,使該一高頻電源的輸出電力能夠變化’因此與例 如等待預先設定的時間的經過來施加其次的步驟的高頻電 力之方法作比較,可防止在反射波未充分衰減中其次的步 驟被實行,反射波重疊地傳播於蝕刻裝置的電路內’無法 變更裝置的狀態等的事態發生’可一方面安定地變更電槳 處理裝置的狀態,一方面當反射波早衰減時不會有發生無 謂浪費的等待時間的情形,迅速地實行其次的步驟’可實 現迅速的裝置狀態的變更。 又,有關上述一高頻電源,判斷其他的高頻電源的反 射波的計測電力値爲形成臨界値以下的手法是可根據從設 於高頻電源單元間的訊號傳送路所直接傳送的其他高頻電 源的反射波資訊來進行,藉此可抑制變更高頻電源的輸出 電力之時序的延遲,此情況藉由邏輯電路來進行各判斷, 藉此在反射波的電力形成比臨界値小之後,可更迅速地開 始輸出電力的控制動作。 【實施方式】 以下說明有關將本發明適用於蝕刻液晶顯示器用的基 板S的蝕刻處理裝置1的裝置狀態的變更之一例的蝕刻處 理裝置1的起動之實施形態。圖1是表示本實施形態的蝕 刻處理裝置1的全體構成。蝕刻處理裝置1是具備例如表 面被陽極氧化處理之鋁構成的處理容器10。處理容器1〇 -12- 201038143 是以能夠處理例如長邊爲2m以上大型的方形基板S之 式,例如形成水平剖面的一邊爲3 5 m,另一邊爲3.0m 度的大小之方筒形狀。 在此處理容器10內的底面側中央部設有下部電極 ,下部電極41是兼具作爲載置藉由未圖示的搬送手段 從外部搬送的基板s之載置台的機能。在下部電極4 1 下部設有絕緣體4 2 ’藉由此絕緣體4 2 ’下部電極41是 ^ 成從處理容器10電性充分浮起的狀態。圖中43是下部 〇 極41的支撐部。並且在處理容器10的下部設有開口部 ,在此開口部4 4的外側設有成爲接地框體的匹配箱1 6 = 在匹配箱1 6內設有各一端側例如經由同軸電纜來 接至電漿形成用(源極用)的高頻電源單元2及偏壓施 用的高頻電源單元3之整合電路161、162’該等整合電 161、162的另一端側是被連接至下部電極41。整合電 161、162是配合電漿的阻抗來進行下部電極41與各高 Q 電源2、3間的阻抗調整(匹配),達成使蝕刻處理裝濯 的電路內所發生的反射波衰減的任務。 並且,在處理容器1 0的側壁連接排氣路14,在此 氣路14連接真空栗15。更在處理容器10的側壁設有用 在外部與處理容器10之間搬出入基板S的搬送口 11及 以開閉此搬送口 1 1的閘閥1 2。 在下部電極4 1的上方,以能夠和該下部電極4 1呈 向的方式設有上部電極51 ’此上部電極51是兼具作爲 處理容器1 〇內的處理空間1 3供給蝕刻處理用的處理氣 方 程 4 1 來 的 形 電 44 連 加 路 路 頻 排 以 用 對 對 體 -13- 201038143 之氣體淋浴頭的機能。上部電極5 1是隔著沿著處理容器 1 0頂部的開口部56的緣部而設置的絕緣體52來固定於該 處理容器10的頂面,經由導電路57及導電性罩58來與 處理容器10電性連接。而且,處理容器10是被接地。 在上部電極5 1內形成有氣體供給路59,該氣體供給 路59是具備朝向下部電極41上的基板S的載置面開口的 氣體孔5 5,此氣體供給路5 9是經由氣體供給路5 3來連接 至處理氣體供給部54,可將來自該處理氣體供給部54的 處理氣體供給至處理空間1 3內。 具備以上說明的構成之蝕刻處理裝置1的各高頻電源 單元2、3,爲了防止因起動時的反射波的影響對電漿的形 成產生妨礙,而具備一邊監視從設於高頻電源單元2、3 內的高頻電源2 1、3 1的輸出側(負荷側)往該高頻電源 21、31反射回來的反射波的發生狀況,一邊使高頻電力的 輸出階段性地增大之機能。以下一邊參照圖2〜圖4 一邊說 明其詳細。 圖2是表示源極用高頻電源單元2及偏壓用高頻電源 單元3的構成方塊圖。 源極用高頻電源單元2是具備: 高頻電源21,其係例如輸出13.56MHz、10kW的高頻 » 電力控制部2 1 1,其係控制往處理容器1 〇側(下部電 極4 1 )之高頻電力的供給; 時序訊號產生部22,其係一邊監視在高頻電源21的 -14- 201038143 負荷側所發生的反射波,一邊將升起時的階段性的輸出增 大用的時序訊號賦予電力控制部2 1 1 ;及 通訊板2 3。 另一方面’偏壓用高頻電源單元3是具備: 高頻電源3 1,其係例如輸出3.2MHz、5 kW的高頻; 電力控制部3 1 1 ’其係控制往處理容器j 〇側(下部電 極4 1 )之高頻電力的供給; 0 時序訊號產生部32,其係一邊監視在高頻電源31的 負荷側所發生的反射波,一邊將升起時的階段性的輸出增 大用的時序訊號賦予電力控制部311;及 通訊板3 3。 通訊板2 3、3 3的第1埠2 3 1、3 3 1是分別被連接至後 述的控制部1 00的控制板1 0 1,可接收來自控制部1 〇〇的 起動訊號(ΟΝ/OFF訊號),或可將朝向處理容器10供給 的電力(以下稱爲行進波)的電力値、及反射波的電力値 Q 的計測結果從各高頻電源2 1、3 1朝向控制部1 〇〇傳送。 又’源極用高頻電源單元2的第2埠232是經由訊號 傳送路來與偏壓用高頻電源單元3的第2埠332連接,可 將在源極用高頻電源單元2的高頻電源2 1內所被計測的 反射波的電力値傳送至偏壓用高頻電源單元3的時序訊號 產生部32。另一方面,偏壓用高頻電源單元3的第3埠 333是經由訊號傳送路來與源極用高頻電源單元2的第3 埠23 3連接’可將在偏壓用高頻電源單元3的高頻電源31 內所被計測的反射波的電力値傳送至源極用高頻電源單元 -15- 201038143 2的時序訊號產生部22。如此各電源單元2、3可互相監 視在對手側的電源單元3、2所被計測的反射波。 並且,在各高頻電源單元2、3內,源極用高頻電源 單元2側的高頻電源21與時序訊號產生部22,偏壓用高 頻電源單元3側的高頻電源3 1與時序訊號產生部3 2會互 相連接,可在各個時序訊號產生部22、32監視朝向自己 的電源單元2、3傳播而來的反射波。各時序訊號產生部 22、32是根據朝向自己及對手側雙方的電源單元2、3傳 播而來的反射波的監視結果來產生後述的時序訊號,朝向 各電力控制部211、311輸出,另一方面,電力控制部211 、311是根據此時序訊號來朝向高頻電源21、31輸出控制 訊號,可使該高頻電源2 1、3 1的輸出階段性地增大。 圖3及圖4是表示各高頻電源單元2、3內的內部構 成的構成圖。首先,若說明有關圖3的源極用高頻電源單 元2 ’則時序訊號產生部22是供以根據自己的高頻電力的 反射波及偏壓側電力的反射波來產生用以階段性增大高頻 電力的輸出之時序訊號者。2 24是比較器,在自己的反射 波電力計2 1 4所計測的反射波的電力値超越預設的臨界値 (第1臨界値,例如在本例是後述的反射波電力計2 1 4的 檢測下限界)時輸出邏輯「1」。225是否定電路,將使比 較器224的輸出反轉的訊號A2賦予後段的單步多重振盪 器(oneshot multivibrator)(以下稱爲 OMV) 223。 又’ 22 1是比較器,在偏壓用高頻電源單元3側所被 計測且傳送的反射波的電力値超越預設的臨界値(第2臨 -16- 201038143 界値,例如在本例是後述的反射波電力計3 1 4的檢測 界)時輸出邏輯「1」。222是脈衝輸出電路,當比 221的輸出從「1」下降至「〇」時輸出預設的長度的 訊號A1。此脈衝輸出電路222是例如組合微分電路 OMV來構成。 22 3是OMV,當兩輸入端的邏輯皆形成「1」時, 即脈衝輸出電路222的輸出訊號A1及否定電路225的 0 出訊號A2形成「1」時,用以將時序訊號的脈衝訊號 供給至電力控制部2 1 1者。因此,時序訊號產生部22 自己的高頻電力的反射波的電力値爲第1臨界値以下, 偏壓側的高頻電力的電力値一旦增大然後形成比第2臨 値更小時,時序訊號會被輸出至電力控制部2 1 1。 電力控制部2 1 1是實現根據來自控制部1 00的起動 號(ΟΝ/OFF訊號)及來自時序訊號產生部22側的時序 號而來控制高頻電源2 1的輸出之任務。 Q 高頻電源21是具備: 高頻電源本體212,其係輸出爲了在下部電極41與 部電極5 1之間供給高頻電力而使處理氣體電漿化(活 化)的高頻電力;及 方向性結合器2 1 3,其係分別朝向各個反射波電力 214及行進波電力計215取出從高頻電源本體212供給 處理容器1 〇側(下部電極4 1 )的行進波及從處理容器 側往源極用高頻電源單元2傳播而來的反射波。In the manufacturing process of a flat panel display (FPD: Flat Panel Display) such as a semiconductor device or a liquid crystal display device, a plasma etching device that performs an etching process on a semiconductor wafer or a glass substrate or the like is used or implemented. In a plasma processing apparatus such as a plasma-treated plasma CVD apparatus, for example, a high-frequency power is applied to a parallel plate-type electrode, and an etching apparatus for etching the object to be processed is formed by a capacitive coupling plasma formed between the electrodes. It is a high-frequency power source for forming a plasma (hereinafter referred to as a source) for the lower electrode (the lower electrode) which is used as a mounting table for the Q body, for example, on one side of the electrode which is disposed to face up and down. As the cathode electrode, a high-frequency power source for connecting the lower electrode to the bias is known. The high-frequency power source for biasing is a task for supplying electric power for introducing ions in the plasma to the side of the object to be processed, thereby ensuring anisotropy of etching or preventing occurrence of abnormal discharge. At the start of such an etching treatment apparatus, high-frequency power is supplied to the lower electrode by the above-described high-frequency power sources, whereby plasma is formed between the parallel plate-type electrodes, but at this time, if the large electric power is short When the time is applied, -5 - 201038143 For example, the matching of the integrated circuit provided between the high-frequency power source and the lower electrode is not obtained, and reflected waves from the lower electrode side toward the respective high-frequency power sources occur. This reflected wave is an obstacle in forming a stable plasma, and it takes a long time to start the etching apparatus. Therefore, for example, the power supply from the high-frequency power source on the source side or the bias side is divided into a plurality of stages, and is slow. A technique of applying electric power slowly, thereby reducing the reflected wave generated at the time of starting, is known (for example, refer to Patent Document 1). FIG. 1 is an example of a conventional sequence in which electric power is applied to the lower electrodes from the high-frequency power sources on the source side and the bias side, and in this example, in order to suppress the influence of the reflected waves, the source side is The power supply of each of the high-frequency power sources on the bias side is performed, for example, in two stages. Fig. 10 (a) and Fig. 10 (c) show the sequence of the start signal (ΟΝ/OFF signal) transmitted from the upper computer (control unit) of the operation control of the entire high-frequency power supply. In addition, FIGS. (b) and (d) of FIG. 10 show high-frequency power (shown by solid lines in each drawing) supplied from each high-frequency power source to the lower electrode, and propagation from the lower electrode side toward each high-frequency power source. The duration change of each power 値 of the reflected wave power (indicated by a broken line). The horizontal axis of each of Figs. 10(a) to 10(d) is time. According to the conventional power supply sequence, when each of the high-frequency power sources receives the start signal from the control unit at the time T!, the high-frequency power source on the source side is standby "the power is not applied to the lower electrode, and the bias is applied. The high-frequency power source on the side is a step of gradually increasing the applied power to a predetermined power 値 (hereinafter referred to as the power of the i-th stage) lower than the power 値 at the time of the process. In this case, although the high-frequency power source on the bias side has a reflected wave propagating on the electrode side, -6 - 201038143, by applying the high-frequency power stepwise, the power of the reflected wave is also compared. Smaller's therefore, for example, when the reflected wave is short by the action of the integrated circuit, it is, for example, attenuated by about 1 second to 2 seconds. In addition, the electric power applied from the high-frequency power source on the bias side reaches the electric power in the first stage, and a predetermined time elapses from the time T 1 described above, and the time τ2 at which the reflected wave on the bias side is sufficiently attenuated is expected. The power application in the first stage is started by the high frequency power source on the source side. In this case, the high-frequency power source on both the source side and the bias side is transmitted on the bias side including the power supply, and the reflected wave is also transmitted by the integrated circuit. It will decay. In this way, the matched time interval in which the reflected wave is sufficiently attenuated is set in advance, for example, at the time τ2 to τ4 from the application start time Τ 1 of the high-frequency power, and the first stage is applied, for example, on the bias side. Power (time T i )—the first stage of power is applied to the source side (time τ2) 电力 The power at the time of applying the process on the bias side (time Τ3) 电力 The power when the Q process is applied to the source side (time τ4) The high-frequency power on the bias side and the source side is alternately increased stepwise, thereby suppressing the influence of the reflected wave, and the power supply sequence for starting the etching processing device as soon as possible is employed. However, in the etching treatment of the glass substrate for FPD, etc., in recent years, the size of the glass substrate has increased, and it is necessary to process the object to be processed, for example, having a long side of 2 m, and to use a mounting table that also serves as the object to be processed. The lower electrode is also very large. When the lower electrode is enlarged, the space for forming the plasma is also increased. Therefore, as the electric power necessary for plasma formation or the like increases, the electric force of the reflected wave is increased to 201038143, and in an extreme case, the matching is completed. It takes more than 10 seconds. Therefore, as described above, for example, the power supply order of the applied electric power is increased every few seconds, and the reflected wave generated in the previous step is as shown in, for example, the timing of FIG. 10(b) and FIG. 1(d). Before the attenuation, the power supply of the next step is started. The reflected wave propagates in the circuit of the etching device in an overlapping manner, and is not easily attenuated. There is a problem that stable plasma cannot be formed. In order to avoid such trouble, it is possible to consider the timing. The interval between τ2 and τ4 is longer than in the past' to fully ensure the matching time. However, the time necessary for the matching is not constant. Even if the lower electrode is enlarged, for example, the matching is completed in the range of i seconds to 2 seconds. If the interval between the power supply and the power supply is increased, the matching is completed. The waiting time for the next step (the display of Δ", Δ" in FIG. 10(d) is increased, and the fear that the start time of the shafting processing device is unnecessarily long is high. For example, Patent Document 2 and Patent Document 3 describe techniques for monitoring the electric power of a reflected wave by a power meter or the like, and confirming that the enthalpy is formed to be smaller than a predetermined threshold 之后 and then applying the power of the next step. In the above-mentioned Patent Document 1 to Patent Document 3, a technique of applying high-frequency electric power in stages or a technique of monitoring high-frequency electric power in a step of applying the reflected wave generated by application of high-frequency electric power is described. However, the optimum power supply order in the case where the high-frequency power on the source side and the bias side is applied stepwise as shown in Fig. 1A, or the configuration of the device suitable for this order, is not disclosed. [Patent Document 1] Re-listed WO99/11103, page 11, page 201038143, line 4 to line 16, line 2 (patent document 2), special opening 2007-2 1 45 89; paragraph 005 9 paragraph - Section 0061, Figure 15 '16' (Patent Document 3), JP-A-2007-1255 5; paragraph 28 to paragraph 0029, table 2 [invention] ^ (invented by the invention) Problem ❹ The present invention has been made in view of such circumstances, and an object thereof is to provide a plasma processing apparatus and an operation method of an electric power processing apparatus which are stable and can change the state of the apparatus in a short time. (Means for Solving the Problem) The plasma processing apparatus of the present invention has a plurality of high-frequency power sources that intervene in the high-frequency output of the plasma in the processing container, and the processed in the Q container is processed by the plasma. The plasma processing apparatus that processes the output power of the plurality of high-frequency power sources in order to change the state of the apparatus is characterized in that the high-frequency power supply unit is provided for each high-frequency power supply. a power control unit including a high-frequency power source and an output for controlling the high-frequency power source, and a reflected wave measuring means for measuring a power 被 reflected by the reflected wave of the high-frequency power source; and a measuring power for determining a reflected wave of each of the high-frequency power sources値Whether or not a means of forming a critical enthalpy is formed; and a high-frequency power source for changing the output power is subjected to a predetermined time after the measurement power of the reflected wave of the other high-frequency power -9 - 201038143 source is below a critical threshold A means for giving a timing signal for changing the output power of the high-frequency power source to the power control unit. Here, the change of the state of the above-described apparatus is such that the plasma is raised and the output power is changed, and it is appropriate to increase the output power in one stage. Further, the timing signal is established under the condition that the measurement power of the reflected wave of the other high-frequency power source is equal to or lower than the critical value and the measurement power of the reflected wave of the high-frequency power source is equal to or less than the critical value. After that, it is ideal when a predetermined time is passed. Further, a signal transmission path is provided which is connected between the high-frequency power supply units for directly measuring the reflected wave of the reflected wave between the high-frequency power supply units or by using the measured power 値 as a threshold or less The means for determining the transmission of the reflected wave information formed by the signal, and the means for providing the timing signal to the power control unit may include: providing the reflected wave information of the other high-frequency power source transmitted from the signal transmission path in each of the high-frequency power supply units. The means to generate the above timing signals. Further, the means for providing the timing signal to the power control unit includes means for determining whether or not the measured power 反射 of the reflected wave of the high-frequency power source is equal to or less than a critical threshold, and the determination result based on the means and the signal transmission path from the signal It is desirable to transmit reflected wave information of other high-frequency power sources to generate the above-mentioned timing signals. Further, means for determining whether or not the measured power 反射 of the reflected wave of the high-frequency power source is equal to or lower than the threshold 及 and means for generating the above-described timing signal are constituted by a logic circuit. -10-201038143 Further, the operating method of the plasma processing apparatus according to another invention is a plurality of high-frequency power sources that intervene in the high-frequency output of the plasma in the processing container, and the processed processing container is processed by the plasma. The method of operating a plasma processing apparatus in which the output power of the plurality of high-frequency power sources is changed stepwise in order to change the state of the apparatus is characterized in that: the power of the reflected wave of each of the high-frequency power sources is measured. Project: It is determined whether or not the measurement power 反射 of the reflected wave of the high-frequency power source other than the high-frequency power source that changes the output power is less than or equal to the threshold ;; and the measurement power of the reflected wave of the other high-frequency power source is determined 値The process of changing the output power of the high-frequency power source after a predetermined time has elapsed after the threshold 値 is formed. Here, the change of the state of the above-described apparatus is such that the plasma is raised and the output power is changed, and it is appropriate to increase the output power in one stage. In this case, it is necessary to determine whether or not the measurement power 反射 of the reflected wave of the one high-frequency power source is equal to or less than the threshold ,, and the process of changing the output power of the one high-frequency power source is reflected by the other high-frequency power source. It is preferable that the condition that the measurement power 波 of the wave is equal to or less than the threshold 値 and the condition that the measurement power 反射 of the reflected wave of the high-frequency power source is equal to or less than the threshold 成立 is established, and the predetermined time is passed. [Effects of the Invention] According to the present invention, in the plasma processing apparatus in which the output power of the plurality of high-frequency power sources is changed stepwise in the state of the device, the output power is changed by -11 - 201038143. The frequency power supply 'is such that the output power of the one high-frequency power source can be changed when a predetermined time elapses after the measurement power of the reflected wave of the other high-frequency power source is below the threshold '. Therefore, for example, waiting for a predetermined time By comparing the method of applying the high-frequency power of the next step, it is possible to prevent the next step of the reflected wave from being sufficiently attenuated, and the reflected wave is superimposed and propagated in the circuit of the etching apparatus. The occurrence of the situation can change the state of the electric propeller processing device on the one hand, and on the other hand, when the reflected wave is attenuated early, there is no waiting time for unnecessary waste, and the second step of rapidly implementing the rapid device state can be realized. change. Further, in the above-mentioned one high-frequency power source, it is determined that the measurement power of the reflected wave of the other high-frequency power source is equal to or lower than the threshold voltage, and can be directly transmitted from the signal transmission path provided between the high-frequency power supply units. The reflected wave information of the frequency power supply is performed, thereby suppressing the delay of changing the timing of the output power of the high-frequency power source. In this case, each of the determinations is performed by the logic circuit, whereby after the power generation ratio of the reflected wave is smaller than the threshold, The control action of outputting power can be started more quickly. [Embodiment] An embodiment of the startup of the etching processing apparatus 1 in which the apparatus of the present invention is applied to the etching processing apparatus 1 for etching the substrate S for a liquid crystal display is described below. Fig. 1 shows the overall configuration of an etching apparatus 1 according to the present embodiment. The etching treatment apparatus 1 is a processing container 10 having, for example, aluminum whose surface is anodized. The processing container 1 〇 -12 - 201038143 is a square tube shape capable of processing, for example, a square substrate S having a long side of 2 m or more, for example, a square tube having a horizontal cross section of 3 5 m and the other side having a size of 3.0 m. A lower electrode is provided in the center portion of the bottom surface side of the processing container 10, and the lower electrode 41 has a function as a mounting table on which the substrate s is transported from the outside by a transport means (not shown). The lower portion of the lower electrode 4 1 is provided with an insulator 4 2 ' whereby the lower electrode 41 of the insulator 4 2 ' is electrically fully floated from the processing container 10. In the figure, 43 is a support portion of the lower electrode 41. Further, an opening portion is provided in a lower portion of the processing container 10, and a matching box that serves as a grounding frame is provided outside the opening portion 44. 6 = One end side of the matching box 16 is provided, for example, via a coaxial cable. The high frequency power supply unit 2 for plasma formation (source) and the integrated circuit 161, 162' of the high frequency power supply unit 3 for bias application are connected to the lower electrode 41 on the other end side of the integrated electric power 161, 162 . The integrated circuits 161 and 162 perform impedance adjustment (matching) between the lower electrode 41 and each of the high-Q power sources 2 and 3 in accordance with the impedance of the plasma, and achieve the task of attenuating the reflected waves generated in the circuit of the etching process. Further, the exhaust passage 14 is connected to the side wall of the processing container 10, and the vacuum pump 15 is connected to the air passage 14. Further, a side wall of the processing container 10 is provided with a transfer port 11 for carrying in and out of the substrate S between the outside and the processing container 10, and a gate valve 1 2 for opening and closing the transfer port 1 . The upper electrode 51 is disposed above the lower electrode 4 1 so as to be able to face the lower electrode 4 1 . The upper electrode 51 is also used as a processing space for processing the processing space 1 in the processing container 1 . The gas type 44 of the gas equation 4 1 is connected with the path frequency to use the function of the gas shower head of the opposite body-13-201038143. The upper electrode 51 is fixed to the top surface of the processing container 10 via an insulator 52 provided along the edge of the opening 56 at the top of the processing container 10, and is connected to the processing container via the conductive circuit 57 and the conductive cover 58. 10 electrical connection. Moreover, the processing vessel 10 is grounded. A gas supply path 59 is formed in the upper electrode 51, and the gas supply path 59 is provided with a gas hole 55 that opens toward the mounting surface of the substrate S on the lower electrode 41. The gas supply path 59 is via a gas supply path. The refrigerant gas supply unit 54 is connected to the processing gas supply unit 54 to supply the processing gas from the processing gas supply unit 54 to the processing space 13 . Each of the high-frequency power supply units 2 and 3 having the etching processing apparatus 1 having the above-described configuration is provided in the high-frequency power supply unit 2 in order to prevent the formation of the plasma from being disturbed by the influence of the reflected wave at the time of starting. The output of the high-frequency power supplies 2 1 and 3 1 in the 3 (3), and the output of the high-frequency power supplies 21 and 31, and the output of the high-frequency power is increased stepwise. . The details will be described below with reference to Figs. 2 to 4 . Fig. 2 is a block diagram showing the configuration of the source high-frequency power source unit 2 and the bias high-frequency power source unit 3. The source high-frequency power supply unit 2 includes a high-frequency power supply 21 that outputs, for example, a high-frequency power supply control unit 2 1 1 of 13.56 MHz and 10 kW, which is controlled to the side of the processing container 1 (the lower electrode 4 1 ). The supply of the high-frequency power; the timing signal generating unit 22 monitors the timing of increasing the phased output at the time of rising while monitoring the reflected wave generated on the load side of the high-frequency power source 21-14-201038143 The signal is given to the power control unit 2 1 1 and the communication board 23 . On the other hand, the bias high frequency power supply unit 3 includes a high frequency power supply 3 1, which outputs, for example, a high frequency of 3.2 MHz and 5 kW; and the power control unit 3 1 1 ' is controlled to the side of the processing container j Supply of high-frequency power (lower electrode 4 1 ); 0 timing signal generating unit 32 that monitors the reflected wave generated on the load side of the high-frequency power source 31 while increasing the phased output at the time of raising The timing signal used is given to the power control unit 311 and the communication board 33. The first 埠2 3 1 and 3 3 1 of the communication boards 2 3 and 3 3 are respectively connected to the control board 100 of the control unit 100 to be described later, and can receive the start signal from the control unit 1 (ΟΝ/ The OFF signal) or the power 値 of the electric power supplied to the processing container 10 (hereinafter referred to as a traveling wave) and the electric power 値Q of the reflected wave may be directed from the respective high-frequency power sources 2 1 and 31 to the control unit 1 〇 Transfer. Further, the second port 232 of the source high-frequency power source unit 2 is connected to the second port 332 of the bias high-frequency power source unit 3 via the signal transmission path, and can be high in the source high-frequency power source unit 2. The power 値 of the reflected wave measured in the frequency power source 2 1 is transmitted to the timing signal generating unit 32 of the bias high-frequency power source unit 3. On the other hand, the third port 333 of the bias high-frequency power source unit 3 is connected to the third port 23 of the source high-frequency power source unit 2 via the signal transmission path. The electric power 反射 of the reflected wave measured in the high-frequency power source 31 of 3 is transmitted to the timing signal generating unit 22 of the source high-frequency power supply unit -15-201038143 2 . Thus, each of the power supply units 2, 3 can monitor the reflected waves measured by the power supply units 3, 2 on the opponent side. Further, in each of the high-frequency power source units 2 and 3, the high-frequency power source 21 on the source high-frequency power source unit 2 side and the timing signal generating unit 22, and the high-frequency power source 3 1 on the side of the bias high-frequency power source unit 3 are The timing signal generating units 32 are connected to each other, and the reflected signals propagating toward the power supply units 2 and 3 of the respective timing signals generating units 22 and 32 can be monitored. Each of the timing signal generating units 22 and 32 generates a timing signal to be described later based on the monitoring result of the reflected wave propagating toward the power supply units 2 and 3 on both the self and the opponent side, and outputs the timing signal to the respective power control units 211 and 311. On the other hand, the power control units 211 and 311 output control signals to the high-frequency power sources 21 and 31 based on the timing signals, and the outputs of the high-frequency power sources 2 1 and 31 can be gradually increased. 3 and 4 are configuration diagrams showing the internal structure of each of the high-frequency power supply units 2, 3. First, when the high-frequency power source unit 2' for the source of FIG. 3 is described, the timing signal generating unit 22 generates a reflected wave based on its own high-frequency power and a reflected wave of the bias-side power to generate a phased increase. The timing signal of the output of high frequency power. 2 24 is a comparator, and the electric power of the reflected wave measured by the own reflected wave power meter 2 1 4 exceeds a preset threshold 値 (the first critical 値, for example, the reflected wave power meter 2 1 4 described later in this example) The logic "1" is output when the lower limit of detection is detected. In the 225 erroneous circuit, the signal A2 which inverts the output of the comparator 224 is given to the one-shot multivibrator (hereinafter referred to as OMV) 223 of the subsequent stage. Further, '22 1 is a comparator, and the power of the reflected wave transmitted and measured on the side of the bias high-frequency power supply unit 3 exceeds a preset threshold 第 (2nd - 16 - 201038143 値, for example, in this example When it is the detection boundary of the reflected wave power meter 3 1 4 to be described later, the logic "1" is output. 222 is a pulse output circuit that outputs a signal A1 of a preset length when the output of the ratio 221 falls from "1" to "〇". This pulse output circuit 222 is constituted by, for example, a combined differential circuit OMV. 22 3 is the OMV. When the logic of both inputs forms "1", that is, when the output signal A1 of the pulse output circuit 222 and the 0 signal A2 of the negative circuit 225 form "1", the pulse signal for the timing signal is supplied. To the power control unit 2 1 1 . Therefore, the power signal 反射 of the reflected wave of the high-frequency power of the own-time signal generating unit 22 is equal to or less than the first threshold ,, and the power 値 of the high-frequency power on the bias side is increased and then formed smaller than the second copy, and the timing signal is generated. It is output to the power control unit 2 1 1 . The power control unit 2 1 1 is a task for controlling the output of the high-frequency power source 2 1 based on the start number (ΟΝ/OFF signal) from the control unit 100 and the timing number from the timing signal generating unit 22 side. The high-frequency power source 21 includes a high-frequency power source main body 212 that outputs high-frequency power for plasma-processing (activation) of the processing gas in order to supply high-frequency power between the lower electrode 41 and the partial electrode 51; The sex combiner 2 1 3 extracts the traveling wave supplied from the high-frequency power source main body 212 to the side of the processing container 1 (the lower electrode 4 1 ) and the source from the processing container side to the reflected wave power 214 and the traveling wave power meter 215, respectively. The reflected wave propagated from the high-frequency power supply unit 2 is extremely used.
電力控制部2 1 1是在來自控制部1 〇〇側的ON/OFF 限 器 衝 與 亦 輸 A3 是 且 界 訊 訊 上 性 計 至 10 訊 -17- 201038143 號形成ON’且從時序訊號產生部22接收時序訊號的脈衝 訊號A3的時間點起經過預設的待機時間後的時刻, 以使筒頻電力的輸出能夠增大至預設的電力値的方式控制 高頻電源2 1。電力控制部2 1 1是具備例如增加接收來自 OMV223的脈衝訊號A3的次數而記憶的機能,按照脈衝 訊號A3的接收次數來決定高頻電源本體212的輸出。並 且’高頻電源本體212的輸出增大的速度是預先被設定。 藉由該等的機能,例如本例的源極用高頻電源單元2 的高頻電源21可分成2階段的步驟來使高頻電力增大, 在從第1次接收脈衝訊號A3的時間點起經過已述的待機 時間後,例如1秒至2秒,可使從源極側施加的高頻電力 的輸出增大至OkW —5kW (第1段的電力),在從第2次 接收脈衝訊號A3的時間點起經過待機時間後,同樣的時 間內可使輸出增大至5kW—10kW (製程時的電力)爲止。 反射波電力計2 1 4、行進波電力計2 1 5是分別實現計 測在方向性結合器2 1 3所取出的行進波及反射波的電力値 之任務’在反射波電力計2 1 4所計測的反射波的電力値( 相當於反射波資訊)是朝向自己的時序訊號產生部22、偏 壓用高頻電源單元3側的時序訊號產生部3 2、以及控制部 100的3處即時輸出。另一方面,在行進波電力計215所 計測的行進波的電力値是朝向控制部1 00即時輸出。 在此,說明有關實施形態的蝕刻處理裝置1的全體作 用之前,利用模式性地顯示從源極側、偏壓側的各高頻電 源單元2、3施加高頻電力至下部電極41的順序之一例的 -18- 201038143 圖7(a)〜圖7(d)來簡單敘述有關時序訊號產生部22 的動作及電力控制部211的動作。各圖的指示內容是與在 先前技術所說明的圖1 0 ( a )〜圖1 0 ( d )同樣。 現在’在各高頻電源單元2、3所計測的行進波、反 射波的電力値爲圖7所示的時刻T2'之前,偏壓側的反射 波的電力値爲比已述的第2臨界値更大的値。此時,如圖 7 ( b )所示在源極側未被施加高頻電力,所以在源極用高 ^ 頻電源單元2側的高頻電源21所被計測的行進波、反射 波皆是電力値爲零。因此,比較器224的輸出是「0」, 所以OMV223的另一方側的輸入訊號A2是「1」。此時被 輸入比較器221,反射波的電力値是如上述般超越第2臨 界値,所以從脈衝輸出電路 222未輸出脈衝,因此 OMV223的一方側的輸入訊號A1是「0」。 而且如圖7(d)所示在偏壓用高頻電源單元3側發生 的反射波會衰減,一旦被輸入時序訊號產生部22的比較 Q 器22 1的電力値低於第2臨界値,則比較器22 1的輸出會 從「1」變換至「0」,在脈衝輸出電路222內的微分電路 檢測此變化,從脈衝輸出電路222往OMV223輸出脈衝訊 號。 因此OMV223的一方的輸入訊號A1會形成「1」, OMV223的輸入條件(AND條件)會成立而從OMV223輸 出第1次的時序訊號的脈衝訊號A3。此結果,電力控制 部2 1 1是從預先設定的待機時間tQ的經過後的時刻T/起 進行使高頻電源21的輸出增大至〇kW —5kW (第1段的電 -19- 201038143 力)爲止的動作。 其次,說明有關在圖7所示的時刻Τ4’之前的時序, 檢測分別在源極側、偏壓側所發生的反射波低於第1、第 2臨界値的時序,而使高頻電源21的輸出增大之動作。此 情況,因爲已由高頻電源2 1來對源極側施加比製程時的 電力更小的第1段的電力,所以在時刻τ3’中偏壓側的高 頻電源3 1的輸出會增大,藉此反射波在源極側也會發生 ,此反射波的電力値會在反射波電力計2 1 4被計測而往比 較器224輸入。 此反射波的電力値超越第1臨界値的期間,OMV2 2 3 的另一方的輸入訊號Α2是形成「0」的狀態,一旦該電力 値低於桌1臨界値’則上述輸入訊號Α2會形成「1」。另 一方面,在偏壓側的反射波的電力値低於第2臨界値的時 序,如已述般OMV223的輸入條件會成立,從〇MV223輸 出第2次的時序訊號之脈衝訊號A3至電力控制部2 1 1。 其結果,電力控制部2 1 1是在待機時間△“的經過後 ,從時刻 Τ4'起進行使高頻電源 21的輸出增大至 5kW—10kW (製程時的電力)爲止的動作。 可是例如由圖7 ( b )及圖7 ( d )的時刻τ 3,之後所發 生的反射波的電力値的歷時變化來看亦可知,一般在使輸 出增大的高頻電源側(在本例是偏壓側的高頻電源31 ) 所發生的反射波至衰減爲止較需要長時間,在未使輸出增 大的對手側(在本例是源極側的高頻電源2 1 )所發生的 反射波會以比較短的時間衰減。此情況,圖3所示的時序 -20- 201038143 訊號產生部2 2是首先源極側的反射波的電力値會低於第1 臨界値’來自否定電路22 5的輸出訊號會成爲「1」,接 著偏壓側的反射波的電力値會低於第2臨界値,從脈衝輸 出電路222輸出脈衝訊號,其結果,〇MV223的兩輸入訊 號A1、A2會成爲「1」’往電力控制部211輸出脈衝訊 號A3。 如此’依訊號A2 —脈衝訊號A1的順序,在OMV223 0 輸入訊號時,即使各反射波衰減的時序彼此偏離大, OMV223還是可掌握之後衰減的偏壓側的反射波低於臨界 値的時序來使電力控制部2 1 1作動。 對於此’想像有關與圖7 ( b )及圖7 ( d )所示的例 子相反地’比起在使輸出增大的高頻電源側(在本例是偏 壓側的高頻電源3 1 )所發生的反射波的衰減,在未使輸出 增大的對手側(在本例是源極側的高頻電源2 1 )所發生的 反射波的衰減的時序會產生延遲的事態之情況。此情況, Q 若由脈衝輸出電路222輸出的脈衝訊號a i的時間寬被設 定成短,則例如會檢測偏壓側的反射波的衰減,而從脈衝 輸出電路222輸出脈衝訊號A1,此脈衝訊號的位準下降 (脈衝訊號消失)後,源極側的反射波的衰減會被檢測, 一旦否定電路2 2 5側的訊號A 2形成「1」,則〇 Μ V 2 2 3的 輸入條件不會成立。 於是實施形態的脈衝輸出電路2 2 2是如已述般構成可 輸出具有所定的時間寬、例如數秒程度的時間寬之脈衝訊 號A1 ’即使例如在未使輸出增大的高頻電源(例如在時 -21 - 201038143 刻τ3’之後的時序是源極側的高頻電源2 η所發生 波比在使輸出增大的高頻電源(在本例是偏壓側的 源31)更之後衰減,一方的輸入訊號Α1還是會一 繼續^ 1」的狀態,藉此可掌握之後衰減的源極側 波低於臨界値的時序來使電力控制部2 1 1作動。 另外,當2個反射波的衰減的時序大不同,在 衝輸出電路222輸出的脈衝訊號A 1所持有的時間 的時序,否定電路225的輸出形成「1」那樣時, 要檢測即使在上位側的控制部1 〇〇預先設定的時間 不會有施加於下部電極41的電力增大的情況,而 報操作員,或再度重新進行來自源極用高頻電源單 偏壓用高頻電源單元3之電力的施加動作即可。 並且,從脈衝輸出電路222輸出的訊號A1雖 成檢測偏壓側的反射波的電力値低於第2臨界値的 輸出形成「1」的步驟訊號,但此情況例如需要在 高頻電源2 1、3 1的輸出之時序(時刻T , 時刻T4 刻)重設來自脈衝輸出電路222的輸出之動作。 以上是說明有關在源極用高頻電源單元2側監 頻電源2 1、3〗所發生的反射波,在其電力値低於 定的臨界値(第1臨界値、第2臨界値)的時間點 該源極用高頻電源單元2側的高頻電源2 1所施力D 電力的輸出增大之電路的構成及其動作,但有關圖 的偏壓用高頻電源單元3側的時序訊號產生部32 電源31的構成及動作也是與已述的源極用高頻電淡 的反射 高頻電 定時間 的反射 比從脈 寬更晚 例如只 經過也 予以通 元 2、 亦可構 情況而 提高各 的各時 視各高 預先設 ,使由 的高頻 4所示 及高頻 i單元2 -22- 201038143 側的時序訊號產生部3 2幾乎同樣。 亦即,在自己的反射波電力計3 1 4所計測的反射波是 在比較器3 24檢測是否超越預先設定的臨界値(第3臨界 値),在否定電路3 25反轉,而將訊號B2給予OMV323 。並且一旦在源極用高頻電源單元2側所被計測且傳送的 反射波的電力値衰減至預先設定的臨界値.(第4臨界値) 以下的値,則會由脈衝輸出電路3 22來將預先設定的長度 0 的脈衝訊號B1輸出至OMV3 23。OMV3 23是在兩輸入端的 邏輯皆形成「1」時,將時序訊號的脈衝訊號B3供給至電 力控制部3 1 1。因此,時序訊號產生部3 2是自己的高頻電 力的反射波的電力値爲第3臨界値以下,且源極側的高頻 電力的反射波一旦增大然後形成比第4臨界値更小時,時 序訊號會被輸出至電力控制部311。 並且,電力控制部3 1 1也是與已述者同樣,來自控制 部1〇〇側的ΟΝ/OFF訊號爲ON,且在從時序訊號產生部 Q 3 2接受時序訊號的脈衝訊號B 3的時間點起經過預先設定 的待機時間△ t 〇的時刻,使高頻電源3 1的輸出增大至預先 設定的電力値。電力控制部31 1會增加接收來自OMV3 2 3 的脈衝訊號B 3的次數而予以記憶的機能、或以能夠按照 脈衝訊號B 3的接收次數來使高頻電源3 1的輸出例如增大 成OkW —2.5kW (第1段的電力)、2.5kW —5kW (製程時 的電力)之方式構成的點也是如已述般。 在此於偏壓用高頻電源單元3的起動剛開始後,皆未 從高頻電源31、21輸出高頻電力.,因此反射波未發生, -23- 201038143 所以OMV3 23無法產生時序訊號。於是在 控制部3 1 1之間經由〇 R電路3 2 7來連 OMV326會在來自控制部1〇〇的起動訊號 將該訊號變換成脈衝訊號B4,以此脈衝訊 次的時序訊號來往電力控制部3 1 1輸出, 源3 1的輸出增大之構成。在此點,偏壓側 是已經被施加高頻電力,與可從OMV22 3 脈衝訊號A3 )的狀態下起動的源極用高| 構成不同。 另外,高頻電源31具備高頻電源本體 合器3 1 3、以及反射波電力計3 1 4、行進名 點是與已述的源極用高頻電源單元2側的 樣。 並且在以上說明的例子中,時序訊號 輸出至電力控制部211 (311),接著在電 3 1 1 )經過預先設定的時間後進行電力增 ,但亦可例如在〇 Μ V 2 2 3 ( 3 2 3 )的後段 的輸出僅延遲上述預先設定的時間之延遲 遲電路輸出的脈衝訊號作爲時序訊號A3 ’時序訊號A3 ( Β3 )被輸入電力控制部 ,立即進行電力增大用的控制動作。 其次,回到蝕刻處理裝置1的全體構 的控制部1 〇〇是例如構成爲具備未圖示的 的電腦,在記憶體中是除了記憶有對各高 OMV3 23與電力 接 OMV326,此 形成ON的時序 號B4作爲第1 成爲開始高頻電 高頻電源單元3 輸出時序訊號( 霞電源單元2是 :3 1 2、方向性結 安電力計3 1 5的 高頻電源21同 A3 ( B3 )會被 力控制部2 1 1 ( 大用的控制動作 設置使脈衝訊號 電路,以由此延 (B3 )。此情況 2 1 1 ( 3 1 1 )之後 成的說明,已述 1 CPU及記憶體 頻電源單元2、 -24- 201038143 3輸出起動訊號(ΟΝ/OFF訊號),或監視來自該等高頻 電源單元2' 3的行進波、反射波的電力値之已述的動作 外’還記憶有該蝕刻處理裝置1的全體動作的總括控制, 亦即編入有關於將基板S搬入處理容器10內,對載置於 下部電極41上的基板S實施蝕刻處理後搬出爲止的動作 之控制等的步驟(命令)群的程式。此程式是例如被儲存 於硬碟、光碟、光磁碟、記憶卡等的記憶媒體,由此來安 ^^裝於電腦。 〇 接著,一邊參照圖5、圖6的流程圖及圖7(a)〜圖7 (d ) ’ 一邊說明有關此蝕刻處理裝置1的作用。首先, 操作員會從未圖示的輸入畫面來輸入氣體種類、處理容器 10內的壓力、及從各高頻電·力單元2' 3供給的製程時的 電力等的處理條件。然後打開閘閥1 2,藉由未圖示的外部 的搬送臂來將例如表面被圖案化有阻絕層,且其下層形成 有金屬膜的基板S予以搬入處理容器1〇內,藉由該搬送 Q 臂及未圖示的昇降銷的互相作用,將此基板s載置於下部 電極41。接著,關閉閘閥12,一邊從兼作氣體淋浴頭使 用的上部電極51供給處理氣體至處理容器1〇內,一邊將 處理容器10內抽真空,使處理空間13內成爲設定的壓力 〇 然後’如圖5的流程圖所示,在控制部1 〇 〇、偏壓用 高頻電源單元3及源極用高頻電源單元2開始電力的供給 動作。首先’控制部1〇〇是如圖7(a)、圖7(c)所示 ’在時刻ΙΊ'傳送將源極用高頻電源單元2及偏壓用高頻 -25- 201038143 電源單元3設爲ON的起動訊號(步驟sl〇1),終了(結 束)有關電力供給的動作。以下’對下部電極41施加源 極電力及偏壓電力的動作是在源極用高頻電源單元2及偏 壓用局頻電源單兀3由控制部〗〇〇的控制來獨立實行。 一旦在各高頻電源單元2、 3接收「on」狀態的起 動訊號(步驟S 2 0 1、S 3 0 1 ) ’則電力控制部3丨丨會藉由 該ON訊號及圖4所示的OMV326的作用來作動,首先從 偏壓側的高頻電源31往下部電極4 1施加比製程時的電力 更低的第1階段的電力之動作會立即開始(步驟S 3 02 ) 。藉由在負荷側施加闻頻電力,會在該高頻電源31發生 反射波,如圖7 ( d )所示,反射波的電力會配合所施加的 電力增大而增加。而且由高頻電源31所施加的電力是在 形成第1階段的電力的設定値的階段成爲一定,另一方面 ,反射波的電力會依整合電路1 62的匹配而慢慢地降低。 期間,在偏壓用高頻電源單元3側所計測的反射波的 電力値是往源極用高頻電源單元2即時傳送(步驟S303 ),在源極用高頻電源單元2中,接收此電力値(步驟 S 2 02 ),至該電力値形成第2臨界値以下爲止,監視偏壓 用高頻電源單元3側的反射波(步驟S2 03 ; NO )。 而且,若此反射波的電力値一旦增大然後形成比第2 臨界値更小的情形會藉由已述的脈衝輸出電路2 2 2的作用 來查出(步驟S 2 0 3 ; Y E S ) ’則會產生時序訊號,在待機 時間AU經過後的時刻T2' ’電力控制部2 1 1會作動’由源 極側的高頻電源2 1來施加比製程時的電力更低的第1階 -26- 201038143 段的電力至下部電極41(步驟S204)。 其結果,如圖7(b)、圖7(d)所示,反射波會從 負荷側朝源極側、偏壓側的雙方的高頻電源21、31傳播 。此時,在偏壓側,往自己的側傳播而來的反射波的電力 値會被計測(步驟S3 04 ),且在源極側,在該源極側所 被計測的反射波的電力値會朝向偏壓側輸出(步驟S2 05 )0 0 在偏壓側,至有關自己的反射波的電力値的計測結果 (圖6,步驟S3 〇4 )及從源極側接收的反射波的電力値( 步驟S3 05 )分別形成第3臨界値、第4臨界値以下的値 爲止,監視該等的値(步驟S 3 0 6 ; Ν Ο )。而且,若偏壓 側的反射波的電力値形成第3臨界値以下,且由源極側接 收的反射波的電力値一旦增大然後形成第4臨界値以下( 步驟S306;YES),則會產生時序訊號,在待機時間 經過後的時刻T3',電力控制部3 1 1會作動,由偏壓側的 Q 高頻電源3 1來施加製程時的電力至下部電極41 (步驟 S307 )。 以下,即時計測在此電力的施加動作下發生於源極側 、偏壓側雙方的反射波的電力値(步驟S 2 0 6 ),進行傳 送接收(步驟S308、S207),然後監視(步驟S208;NO )’若各個電力値形成第1、第2臨界値以下(步驟S208 ;YES ),則會產生時序訊號,在待機時間Ato經過後的 時刻τ 4 ’,此次是由源極側的高頻電源2 1來施加製程時的 電力至下部電極41(步驟S209),而終了(結束)有關 -27- 201038143 電力供給的起動動作。此結果,會在處理空間1 3內形成 安定的電漿,開始基板S的飽刻處理。 若根據本實施形態,則具有以下的效果。 在電漿的升起時依序階段性地增大複數的高頻電源21 、31的輸出電力之蝕刻處理裝置1中,有關1階段增大輸 出電力的順序來到的一高頻電源2 1、3 1,是在至少其他的 高頻電源3 1、2 1的反射波的電力値形成臨界値以下之後 ,經過待機時間時使能夠1階段增大該一高頻電源2 1、3 1 的輸出電力,因此與例如等待預先設定的時間的經過來施 加其次的步驟的高頻電力之方法作比較,可防止在反射波 未充分衰減中其次的步驟被實行,反射波重疊地傳播於蝕 刻裝置的電路內而無法形成電漿的事態發生,可一方面安 定地起動蝕刻處理裝置1,一方面當反射波較早衰減時不 會有發生無謂浪費的等待時間的情形,可迅速地實行其次 的步驟,實現迅速的起動。 而且本例是其他的高頻電源3 1、2 1的反射波形成臨 界値以下、及在該一高頻電源2 1、3 1的自己側所被計測 的高頻電力的反射波形成臨界値以下的兩條件成立之後使 能夠1階段增大輸出電力,因此即使在反射波衰減的時序 替換之類時,還是可安定地起動蝕刻處理裝置1。 並且在各局頻電源單兀2、3設有用以直接進行反射 波的電力値的接收(傳送)的訊號傳送路,時序訊號產生 部22、32會被設於各高頻電源單元2、3,因此該等的高 頻電源單元2、3可不經由控制部1 〇 〇來直接控制高頻電 -28- 201038143 源21、31而使該輸出增大。通常,在蝕刻處理裝置1的 起動時,控制部1 0 0是並行處理容器1 〇內的壓力控制或 蝕刻氣體的供給量控制等,形成負荷高的狀態。因此,若 在控制部1 〇 〇側進行反射波的電力値是否形成臨界値以下 的判斷、或根據此判斷結果來使高頻電源21、31的輸出 增大的控制’則恐有在該等的動作產生延遲之虞。此點, 各高頻電源單元2、3是可對電力的供給動作特殊化而來 0 實行該等的判斷或控制,可減輕加諸於控制部1 0 0的負担 來實現迅速的起動動作。 在此圖1所示的蝕刻處理裝置1是將源極側、偏壓側 雙方的高頻電力單元2、3連接至下部電極41之所謂的下 部雙頻型的鈾刻處理裝置1,但高頻電力單元2、3的連接 方式並非限於此’例如將源極用高頻電源單元2連接至上 部電極5 1側’且將偏壓用高頻電源單元3連接至下部電 極41之所謂的上下雙頻型的蝕刻處理裝置1亦可適用本 發明。 又’設於蝕刻處理裝置1的高頻電源的數量並非限於 2個’亦可爲3個以上。例如爲了以大容量施加電漿形成 用的電力,例如作爲源極側將2個的高頻電源S 1、S2連 接至下部電極41’且將偏壓側的高頻電源b連接至下部 電極41 ’而構成下部雙頻型的蝕刻處理裝置1的情況等可 考慮。 此情況’使各高頻電源S 1、S 2、B的輸出增大的順序 ’是例如以能夠形成高頻電源B —高頻電源S 1 高頻電源 -29- 201038143 S2 —高頻電源B—…的方式,使3個的高頻電源si、S2、 B的輸出依次增大,或以能夠形成高頻電源b —高頻電源 S 1及S 2 —高頻電源B —…的方式,使偏壓側、源極側的輸 出交替地增大。無論哪個順序,有關1階段增大輸出電力 的順序來到的一高頻電源,皆可構成其他的高頻電源的反 射波的計測電力値形成臨界値以下之後,能1階段增大該 一高頻電源的輸出電力。 並且在圖3、圖4所示的各高頻電源單元2、3中,雖 限於自己的反射波的電力値與對手側的反射波的電力値雙 方成爲預先設定的臨界値以下時使各高頻電源2 1、3 1的 輸出電力增大的構成,但亦可爲例如檢測僅對手側的反射 波成爲預先設定的臨界値以下的情形而使輸出增大的構成 〇 這是因爲例如使用圖7(b)及圖7(d)來已說明過 那樣,一般在使輸出增大的高頻電源側發生的反射波至衰 減爲止需要較長的時間,在未使輸出增大的另一方側發生 的反射波會以比較短的時間衰減,在使該另一方側的輸出 增大時,只要監視在對手側亦即使輸出增大的高頻電源側 發生的反射波的値,便多數是足夠的情況。 又,判斷反射波的電力値是否形成預先設定的臨界値 以下的手法,並非限於藉由圖3、圖4所示的硬體性的手 法來利用邏輯電路進行時,例如亦可在各高頻電源單元2 、3設置C P U ’而以該C P U來軟體性地進行判斷。又’並 非限於在各高頻電源單元2、3進行該等的判斷時,當然 -30- 201038143 亦可在進行蝕刻處理裝置1全體的動作控制的控制部1 00 取得反射波的電力値的計測結果,進行是否成爲臨界値以 下的判斷,而使各高頻電源21、31的輸出增大。 而且,此判斷並非限於如圖3、圖4的實施形態中所 示般,以反射波的電力値的計測結果作爲反射波資訊來傳 送至對手側,在將此予以接收的對手側,判斷是否成爲臨 界値以下的方式,亦可在計測反射波的電力値的高頻電源 2 1、3 1側判斷該電力値是否成爲可增大對手側的輸出的臨 界値以下,在對手側將顯示該電力値爲形成臨界値以下的 情形之判斷訊號作爲反射波資訊傳送。 此外,設置複數的高頻電源的電漿處理裝置並非限於 圖 1所示的並行平板型者,例如感應耦合電漿( Inductively Coupled Plasma)型的餓刻裝置之例如在螺旋 狀線圈與下部電極分別設置高頻電源的情況等亦可適用本 發明。 另外,在上述的實施形態中,電漿的升起時有關一高 頻電源2 1、3 1,是針對至少其他的高頻電源3 1、2 1的反 射波的電力値形成臨界値以下之後1階段增大該一高頻電 源2 1、3 1的輸出電力之例來進行說明,但本發明所能適 用的例子並非限於電漿的升起時。例如,以處理容器10 內的電漿形成領域、或電漿的電子溫度、電子密度的調整 等變更蝕刻處理裝置1的狀態之目的,例如圖8 ( a )、圖 8 ( b )所示使源極側 '偏壓側的各高頻電源單元2、3的 施加電力從第1製程時的電力至第2製程時的電力,例如 -31 - 201038143 夾著中間電力來階段性地升起時亦可適用本發明。 再者,與圖8所示的例子相反地例如圖9 ( a )、圖9 (b)所示,以變更蝕刻處理裝置1的狀態之目的,將源 極側、偏壓側的各筒頻電源單兀2、3的施加電力從第1 製程時的電力階段性地下降至第2製程時的電力時,或一 方階段性地升起,另一方階段性地下降時等,使複數的高 頻電源的輸出電力變化時亦可適用本發明。而且,此情況 的運轉狀態的變更是例如停止蝕刻處理裝置1時也包含, 此情況是圖9所示的第2製程時的電力爲零。 又,階段性的輸出電力的變更(升起或下降)並非限 於依序變更各高頻電源31、21的輸出變更時,例如將一 方側連續分成2階段以上升起,然後將另一方側連續分成 2階段以上升起等時,也是只要雙方的高頻電源3 1、2 1的 反射波的電力値形成臨界値以下之後實行各階段的輸出變 更即可。 又,本發明的處理裝置是蝕刻處理以外例如可適用於 灰化或 CVD( Chemical Vapor Deposition)等利用其他的 處理氣體來對被處理體進行處理的處理。又,被處理體並 非限於方形的基板,FPD基板或太陽電池用的基板以外, 例如亦可爲圓形的半導體晶圓等。 【圖式簡單說明】 圖1是表示本實施形態的電漿處理裝置的全體構成的 縱剖側面圖。 -32- 201038143 圖2是表示設於上述電漿處理裝置的高頻電源單元的 構成例的方塊圖。 圖3是表示源極側的高頻電源單元的內部構成的說明 圖。 圖4是表示偏壓側的高頻電源單元的內部構成的說明 圖。 圖5是表示上述電漿處理裝置的起動時的高頻電力的 ^ 供給動作的第1流程圖。 圖6是表示上述高頻電力的供給動作的第2流程圖。 圖7是表示藉由上述供給動作來對電漿處理裝置階段 性地供給高頻電力的情況的說明圖。 圖8是表示在調整電漿狀態時,對電漿處理裝置階段 性地供給高頻電力的情況的說明圖。 圖9是表示在調整電漿狀態時,對電漿處理裝置階段 性地供給高頻電力的情況的其他說明圖。 ❹ 圖1〇是表示在以往型的電漿處理裝置中階段性地供 給高頻電力的情況的說明圖。 【主要元件符號說明】 S : FPD基板(基板) 1 :蝕刻處理裝置 1 〇 :處理容器 1 6 :匹配箱 100 :控制部 -33- 201038143 1 〇 1 :控制板 1 6 1、1 6 2 :整合電路 2:源極用高頻電源單元 2 1 :筒頻電源 22 :時序訊號產生部 23 :通訊板 2 1 1 :電力控制部 212:局頻電源本體 2 1 3 :方向性結合器 2 1 4 :反射波電力計 2 1 5 :行進波電力計 221、 224 :比較器 2 2 2 :脈衝輸出電路 223 :單步多重振盪器(OMV) 225 :否定電路 3:偏壓用局頻電源單兀 3 1 :局頻電源 3 2 :時序訊號產生部 3 3 :通訊板 3 1 1 :電力控制部 3 1 2 :高頻電源本體 3 1 3 :方向性結合器 3 1 4 :反射波電力計 3 1 5 :行進波電力計 -34- 201038143 3 2 1、3 2 4 :比較器 3 22 :脈衝輸出電路 3 23、3 26 : OMV 3 2 5 :否定電路 3 2 7 : Ο R電路 4 1 :下部電極 5 1 :上部電極 54 :處理氣體供給部The power control unit 2 1 1 is turned on and off from the ON/OFF limiter from the side of the control unit 1 and is also connected to the A3 and the ON-Sensitometer to 10 to -17-201038143 and is generated from the timing signal. When the portion 22 receives the pulse signal A3 of the timing signal, the time after the preset standby time elapses, the high frequency power source 21 is controlled in such a manner that the output of the tube frequency power can be increased to a preset power state. The power control unit 21 is provided with, for example, a function of increasing the number of times of receiving the pulse signal A3 from the OMV 223, and determines the output of the high-frequency power source body 212 in accordance with the number of receptions of the pulse signal A3. Further, the speed at which the output of the high-frequency power source body 212 is increased is set in advance. With such functions, for example, the high-frequency power source 21 of the source high-frequency power source unit 2 of the present example can be divided into two-stage steps to increase the high-frequency power, at the time of receiving the pulse signal A3 from the first time. After the standby time described above, for example, 1 second to 2 seconds, the output of the high-frequency power applied from the source side can be increased to 0 kW - 5 kW (power of the first stage), and the pulse is received from the second time. After the standby time is elapsed from the time point of the signal A3, the output can be increased to 5 kW - 10 kW (power during the process) in the same time. The reflected wave power meter 2 1 4 and the traveling wave power meter 2 1 5 are measures for measuring the power 値 of the traveling wave and the reflected wave taken out by the directional coupler 2 1 3, respectively, and are measured by the reflected wave power meter 2 1 4 The reflected power of the reflected wave (corresponding to the reflected wave information) is instantaneously outputted to the timing signal generating unit 22 of the own direction, the timing signal generating unit 32 of the bias high-frequency power source unit 3, and the control unit 100. On the other hand, the electric power 行进 of the traveling wave measured by the traveling wave power meter 215 is immediately outputted toward the control unit 100. Here, before the entire operation of the etching processing apparatus 1 according to the embodiment, the order in which the high-frequency power is applied from the high-frequency power source units 2 and 3 on the source side and the bias side to the lower electrode 41 is schematically displayed. An example of -18-201038143 FIGS. 7(a) to 7(d) briefly describe the operation of the timing signal generating unit 22 and the operation of the power control unit 211. The indication contents of the respective figures are the same as those of Figs. 10(a) to 10(d) explained in the prior art. Now, before the power wave of the traveling wave and the reflected wave measured by each of the high-frequency power supply units 2 and 3 is the time T2' shown in FIG. 7, the power 値 of the reflected wave on the bias side is higher than the second critical value described above.値 Bigger 値. At this time, as shown in FIG. 7(b), high-frequency power is not applied to the source side. Therefore, the traveling wave and the reflected wave measured by the high-frequency power source 21 on the source high-frequency power source unit 2 side are The power is zero. Therefore, the output of the comparator 224 is "0", so the input signal A2 on the other side of the OMV 223 is "1". At this time, the comparator 221 is input, and the electric power 反射 of the reflected wave exceeds the second boundary 如 as described above. Therefore, since the pulse is not output from the pulse output circuit 222, the input signal A1 on one side of the OMV 223 is "0". Further, as shown in FIG. 7(d), the reflected wave generated on the side of the bias high-frequency power supply unit 3 is attenuated, and once the power 値 of the comparison Q 22 input to the timing signal generating unit 22 is lower than the second critical value, Then, the output of the comparator 22 1 is changed from "1" to "0", and the differential circuit in the pulse output circuit 222 detects the change, and outputs a pulse signal from the pulse output circuit 222 to the OMV 223. Therefore, the input signal A1 of one of the OMVs 223 forms "1", and the input condition (AND condition) of the OMV 223 is established, and the pulse signal A3 of the first timing signal is output from the OMV 223. As a result, the power control unit 21 is configured to increase the output of the high-frequency power source 21 to 〇 kW - 5 kW from the time T / after the elapse of the preset standby time tQ (the first stage of the power -19 - 201038143) The action until the force). Next, the timing before the time Τ4' shown in FIG. 7 is described, and the timing at which the reflected wave generated on the source side and the bias side is lower than the first and second critical turns is detected, and the high-frequency power source 21 is made. The output increases the action. In this case, since the first-stage electric power which is smaller than the electric power during the process is applied to the source side by the high-frequency power source 21, the output of the high-frequency power source 3 1 on the bias side increases at time τ3'. Therefore, the reflected wave also occurs on the source side, and the reflected power of the reflected wave is measured by the reflected wave power meter 2 14 and input to the comparator 224. When the power of the reflected wave exceeds the first critical period, the other input signal Α2 of the OMV2 2 3 is in a state of “0”, and the input signal Α2 is formed once the power is lower than the threshold of the table 1 "1". On the other hand, when the power 値 of the reflected wave on the bias side is lower than the timing of the second critical ,, the input condition of the OMV 223 is established as described above, and the pulse signal A3 of the second timing signal is output from the 〇MV 223 to the power. Control unit 2 1 1 . As a result, the power control unit 211 performs an operation of increasing the output of the high-frequency power source 21 to 5 kW to 10 kW (power during the process) from the time Τ4' after the lapse of the waiting time Δ". From the time τ 3 of Fig. 7 (b) and Fig. 7 (d), it can be seen from the change of the power 値 of the reflected wave which occurs afterwards, generally on the high frequency power supply side where the output is increased (in this case, The high-frequency power source 31 on the bias side is required to reflect for a long time before the reflected wave is attenuated, and the reflection occurs on the opponent side (in this example, the high-frequency power source 2 1 on the source side) where the output is not increased. The wave will be attenuated in a relatively short time. In this case, the timing -20-201038143 shown in FIG. 3 is that the power of the reflected wave on the source side is lower than the first threshold 値' from the negative circuit 22 The output signal of 5 will become "1", and then the power of the reflected wave on the bias side will be lower than the second threshold, and the pulse signal will be output from the pulse output circuit 222. As a result, the two input signals A1 and A2 of the MV 223 will be The pulse signal A3 is output to the power control unit 211 as "1". Thus, in the order of the signal A1 - the pulse signal A1, even if the timing of the attenuation of each reflected wave deviates from each other when the signal is input to the OMV223 0, the OMV 223 can grasp the timing of the reflected wave on the bias side after the attenuation is lower than the critical threshold. The power control unit 2 1 1 is activated. For this 'imagination, contrary to the example shown in FIGS. 7(b) and 7(d), 'the high-frequency power supply side (in this case, the high-frequency power supply side of the bias side) The attenuation of the reflected wave generated is delayed in the timing of the attenuation of the reflected wave generated on the opponent side (the high-frequency power source 2 1 on the source side in this example) without increasing the output. In this case, if the time width of the pulse signal ai outputted by the pulse output circuit 222 is set to be short, for example, the attenuation of the reflected wave on the bias side is detected, and the pulse signal A1 is output from the pulse output circuit 222, and the pulse signal is output. After the level drop (pulse signal disappears), the attenuation of the reflected wave on the source side is detected. Once the signal A 2 on the side of the negative circuit 2 2 5 forms "1", the input condition of 〇Μ V 2 2 3 is not Will be established. Therefore, the pulse output circuit 2 2 2 of the embodiment is configured to output a pulse signal A1 having a time width of a predetermined time width, for example, several seconds as described above, even if, for example, a high frequency power source is not increased in output (for example, Time-21 - 201038143 The timing after τ3' is that the wave ratio of the high-frequency power source 2 η on the source side is attenuated after the high-frequency power source (in this example, the source 31 on the bias side) that increases the output, The input signal Α1 of one of the states will continue to be in the state of "1", whereby the timing of the source side wave after the attenuation is lower than the critical 値 timing, and the power control unit 2 1 1 is activated. The timing of the attenuation is greatly different. When the output of the negative circuit 225 is "1" at the timing of the time held by the pulse signal A 1 outputted from the output circuit 222, it is detected that the control unit 1 in the upper side is detected in advance. The set time is not increased when the electric power applied to the lower electrode 41 is increased, and the operator may re-execute the operation of applying power from the high-frequency power supply single-bias high-frequency power supply unit 3 for the source. . and Further, the signal A1 output from the pulse output circuit 222 is a step signal in which the power of the reflected wave on the detection bias side is lower than the output of the second threshold 形成 to form "1", but this case is required, for example, in the high frequency power supply 2 1 The timing of the output of the 3 1 (time T, time T4) resets the operation of the output from the pulse output circuit 222. The above is a description of the frequency monitoring power supply 2 1 and 3 on the source high frequency power supply unit 2 side. The generated reflected wave is energized by the high-frequency power source 2 1 on the high-frequency power source unit 2 side at the time when the power 値 is lower than the predetermined threshold 第 (the first critical 値 and the second critical 値). The configuration of the circuit for increasing the output and the operation thereof are shown. However, the configuration and operation of the timing signal generating unit 32 on the side of the high-frequency power supply unit 3 for bias voltage in the drawing are also the high-frequency and low-frequency of the source. The reflection ratio of the reflected high-frequency electric constant time is set to be higher than the pulse width, for example, only the pass element 2, or the height of each time view can be increased, and the high frequency 4 and the high frequency are set. i unit 2 -22- 201038143 side timing signal generation unit 3 2 That is, the reflected wave measured by the own reflected wave power meter 3 14 is detected at the comparator 34 to exceed the preset threshold 第 (the third critical 値), and the negative circuit 325 is reversed. The signal B2 is given to the OMV 323. Once the power of the reflected wave transmitted and measured on the source high frequency power supply unit 2 side is attenuated to a predetermined threshold (the fourth critical threshold), The pulse signal B1 of the preset length 0 is outputted to the OMV3 23 by the pulse output circuit 32. The OMV3 23 supplies the pulse signal B3 of the timing signal to the power control unit 3 when the logic of both inputs forms "1". 1 1. Therefore, the timing signal generating unit 32 is the third critical 値 or less of the reflected wave of the high-frequency power of the self, and the reflected wave of the high-frequency power on the source side increases and then forms smaller than the fourth critical enthalpy. The timing signal is output to the power control unit 311. Further, the power control unit 31 is also in the same manner as described above, when the ΟΝ/OFF signal from the side of the control unit 1 is ON, and the pulse signal B 3 of the timing signal is received from the timing signal generating unit Q 3 2 When the predetermined standby time Δt 〇 is reached, the output of the high-frequency power source 31 is increased to a preset power 値. The power control unit 31 1 increases the function of receiving the number of times of the pulse signal B 3 from the OMV 3 2 3 to be memorized, or increases the output of the high-frequency power source 3 1 to 0 kW in accordance with the number of receptions of the pulse signal B 3 — The points of 2.5 kW (electricity in the first stage) and 2.5 kW to 5 kW (electric power during the process) are also as described above. Since the high-frequency power is not output from the high-frequency power sources 31 and 21 immediately after the start of the bias high-frequency power supply unit 3, the reflected wave does not occur, -23-201038143, so the OMV3 23 cannot generate the timing signal. Then, between the control unit 3 1 1 via the 〇R circuit 3 2 7 , the OMV 326 converts the signal into the pulse signal B4 at the start signal from the control unit 1 , and the timing signal of the pulse signal is transmitted to and from the power control. The portion 3 1 1 is output, and the output of the source 31 is increased. At this point, the bias side is the high frequency power that has been applied, and the source that is activated from the OMV22 3 pulse signal A3) is different in configuration. Further, the high-frequency power source 31 includes a high-frequency power source main body 3 1 3 and a reflected-wave power meter 3 1 4, and the traveling point is the same as the source high-frequency power source unit 2 described above. Further, in the example described above, the timing signal is output to the power control unit 211 (311), and then the power is increased after a predetermined time elapses, but may be, for example, at 〇ΜV 2 2 3 (3). The output of the rear stage of 2 3 ) is delayed only by the pulse signal outputted by the delay delay circuit of the predetermined time as the timing signal A3 'the timing signal A3 ( Β 3 ) is input to the power control unit, and the control operation for power increase is immediately performed. Then, the control unit 1 that is configured to return to the entire configuration of the etching processing apparatus 1 is configured to include, for example, a computer (not shown). In the memory, the memory is connected to each of the high OMVs 23 and the power to the OMV 326. When the serial number B4 is the first, the high-frequency electric high-frequency power supply unit 3 outputs the timing signal (Xia power supply unit 2 is: 3 1 2, the directional power supply safety meter 3 1 5 high-frequency power supply 21 and A3 (B3) It will be controlled by the force control unit 2 1 1 (the large-scale control action is set to make the pulse signal circuit to be extended (B3). In this case, the description of 2 1 1 ( 3 1 1 ), 1 CPU and memory have been described. The frequency power supply unit 2, -24-201038143 3 outputs the start signal (ΟΝ/OFF signal), or monitors the power of the traveling wave and the reflected wave from the high-frequency power source unit 2'3. The collective control of the entire operation of the etching processing apparatus 1 is carried out, that is, the control of the operation of carrying the substrate S into the processing container 10, performing the etching process on the substrate S placed on the lower electrode 41, and then carrying out the operation. Step (command) group of programs. For example, it is stored in a hard disk, a compact disc, a magneto-optical disc, a memory card, etc., and is then installed in a computer. 〇 Next, referring to the flowcharts of FIGS. 5 and 6 and FIG. 7(a) 7(d)', the operation of the etching processing apparatus 1 will be described. First, the operator inputs the gas type, the pressure in the processing container 10, and the high-frequency electric power from the input screen (not shown). Processing conditions such as electric power during the process of supplying the unit 2'3. Then, the gate valve 12 is opened, and for example, a surface is patterned with a barrier layer by an external transfer arm (not shown), and a metal film is formed on the lower layer. The substrate S is carried into the processing container 1 and the substrate s is placed on the lower electrode 41 by the interaction of the transfer Q arm and the lift pin (not shown). Then, the gate valve 12 is closed and the gas shower head is doubled. The used upper electrode 51 supplies the processing gas into the processing chamber 1 while evacuating the inside of the processing container 10, thereby setting the inside of the processing space 13 to a set pressure 〇. Then, as shown in the flowchart of FIG. 5, the control unit 1 〇, bias high frequency The unit 3 and the source high-frequency power supply unit 2 start the power supply operation. First, the control unit 1 传送 transmits the source at the time ΙΊ as shown in FIGS. 7( a ) and 7 ( c ). Frequency power supply unit 2 and bias high frequency -25 - 201038143 The power supply unit 3 is turned ON (step sl1), and the operation of power supply is terminated (end). The following applies 'source power to the lower electrode 41. The operation of the bias power is independently performed by the source high frequency power supply unit 2 and the bias local power supply unit 3 by the control unit 。 。. Once received in each of the high frequency power supply units 2, 3 The start signal of the on state (step S 2 0 1 , S 3 0 1 ) 'The power control unit 3 作 is activated by the ON signal and the action of the OMV 326 shown in FIG. 4, first from the bias side The operation of the first-stage electric power in which the high-frequency power source 31 applies lower electric power than the process to the lower electrode 41 starts immediately (step S 3 02 ). When the frequency power is applied to the load side, a reflected wave is generated in the high-frequency power source 31, and as shown in Fig. 7(d), the power of the reflected wave increases in accordance with the increase in the applied power. Further, the electric power applied by the high-frequency power source 31 is constant at the stage of setting the electric power of the first stage, and the electric power of the reflected wave is gradually lowered by the matching of the integration circuit 1 62. During this period, the power 反射 of the reflected wave measured by the bias high-frequency power supply unit 3 side is instantaneously transmitted to the source high-frequency power supply unit 2 (step S303), and the source high-frequency power supply unit 2 receives this. The power 値 (step S 2 02 ) is monitored until the power 値 is formed below the second threshold ,, and the reflected wave on the high-frequency power source unit 3 side of the bias voltage is monitored (step S2 03 ; NO ). Further, if the power 値 of the reflected wave is increased and then formed smaller than the second threshold 会, it is detected by the action of the pulse output circuit 2 2 2 (step S 2 0 3 ; YES ) ' The timing signal is generated, and the power control unit 2 1 1 operates at the time T2' after the standby time AU elapses. 'The first order is lower than the power during the process by the high frequency power supply 2 1 on the source side. 26-201038143 Power of the segment to the lower electrode 41 (step S204). As a result, as shown in Figs. 7(b) and 7(d), the reflected wave propagates from the load side to the high frequency power sources 21 and 31 on both the source side and the bias side. At this time, on the bias side, the power 反射 of the reflected wave propagating to the side of itself is measured (step S3 04), and on the source side, the power of the reflected wave measured on the source side 値Output to the bias side (step S2 05) 0 0 On the bias side, the measurement result of the power 値 about the reflected wave of itself (FIG. 6, step S3 〇 4 ) and the reflected wave power received from the source side値 (Step S3 05) Each of the third critical enthalpy and the fourth critical enthalpy is formed, and the enthalpy is monitored (step S 3 0 6 ; Ν Ο ). When the power 値 of the reflected wave on the bias side is equal to or less than the third threshold ,, and the power 値 of the reflected wave received by the source side is increased, the fourth threshold 値 is formed (step S306; YES). When the timing signal is generated, the power control unit 31 is activated at the time T3' after the elapse of the standby time, and the power at the time of the process is applied to the lower electrode 41 by the Q high-frequency power source 31 on the bias side (step S307). In the following, the electric power 反射 of the reflected wave generated on both the source side and the bias side in the operation of the electric power is measured (step S 2 0 6 ), and the transmission and reception are performed (steps S308 and S207), and then monitored (step S208). ;NO )' If each power 値 is formed below the first and second thresholds (step S208; YES), a timing signal is generated, at the time τ 4 ' after the standby time Ato elapses, this time from the source side The high-frequency power source 21 applies electric power during the process to the lower electrode 41 (step S209), and ends (ends) the start-up operation of the power supply of -27-201038143. As a result, a stable plasma is formed in the processing space 13 to start the saturating process of the substrate S. According to this embodiment, the following effects are obtained. In the etching processing apparatus 1 for sequentially increasing the output power of the plurality of high-frequency power sources 21 and 31 when the plasma is raised, a high-frequency power source 2 1 in which the order of the output power is increased in one stage is reached. And 3, after the power 値 of at least the other high-frequency power sources 3 1 and 2 1 is formed to be less than or equal to the threshold ,, the high-frequency power sources 2 1 and 3 1 can be increased in one step after the standby time elapses. Since the electric power is output, it is possible to prevent the second step in the case where the reflected wave is not sufficiently attenuated, and the reflected wave is spread over the etching device in comparison with, for example, a method of waiting for a predetermined time to apply the high-frequency power of the next step. In the circuit, the situation in which the plasma cannot be formed occurs, and on the one hand, the etching processing device 1 can be stably activated. On the one hand, when the reflected wave is attenuated earlier, there is no waiting time for unnecessary waste, and the second can be quickly implemented. Steps to achieve a quick start. Further, in this example, the reflected wave formation thresholds of the other high-frequency power sources 3 1 and 2 1 are not critical, and the reflected wave of the high-frequency power measured on the self-side of the high-frequency power sources 2 1 and 31 is critical. After the following two conditions are satisfied, the output power can be increased in one step. Therefore, even when the timing of the reflected wave attenuation is replaced, the etching processing apparatus 1 can be stably activated. Further, in each of the local power supply units 2 and 3, a signal transmission path for receiving (transmitting) the power 直接 directly for the reflected wave is provided, and the timing signal generating units 22 and 32 are provided in the respective high-frequency power supply units 2 and 3. Therefore, the high-frequency power supply units 2, 3 can directly control the high-frequency power -28-201038143 sources 21, 31 without the control unit 1 而 to increase the output. Normally, at the time of starting the etching processing apparatus 1, the control unit 100 is a pressure control in the parallel processing container 1 or a supply amount control of the etching gas, and the like, and a state in which the load is high is formed. Therefore, if the power 値 of the reflected wave on the side of the control unit 1 is determined to be equal to or less than the threshold 、, or the control for increasing the output of the high-frequency power sources 21 and 31 based on the result of the determination, it may be The action is delayed. In this regard, each of the high-frequency power supply units 2 and 3 can perform the determination or control of the power supply operation, and can perform the above-described determination or control, thereby reducing the load imposed on the control unit 100 to achieve a rapid start-up operation. The etching processing apparatus 1 shown in FIG. 1 is a so-called lower dual-frequency uranium etching apparatus 1 that connects the high-frequency power units 2 and 3 on the source side and the bias side to the lower electrode 41, but is high. The connection manner of the frequency power units 2, 3 is not limited to this, for example, the so-called upper and lower sides connecting the source high frequency power supply unit 2 to the upper electrode 51 side and connecting the bias high frequency power supply unit 3 to the lower electrode 41 The dual frequency etching treatment apparatus 1 can also be applied to the present invention. Further, the number of high-frequency power sources provided in the etching processing apparatus 1 is not limited to two, and may be three or more. For example, in order to apply electric power for plasma formation with a large capacity, for example, two high-frequency power sources S 1 and S2 are connected to the lower electrode 41 ′ as the source side and the high-frequency power source b on the bias side is connected to the lower electrode 41 . The case of forming the lower double-frequency type etching processing apparatus 1 can be considered. In this case, the order of increasing the output of each of the high-frequency power sources S1, S2, B is, for example, capable of forming a high-frequency power source B - a high-frequency power source S 1 a high-frequency power source -29 - 201038143 S2 - a high-frequency power source B In the manner of -, the output of the three high-frequency power sources si, S2, B is sequentially increased, or the high-frequency power source b - the high-frequency power sources S 1 and S 2 - the high-frequency power source B - ... can be formed. The outputs on the bias side and the source side are alternately increased. In any order, the high-frequency power supply that comes up in the order of increasing the output power in the first-stage can be used to form the high-voltage power supply. The output power of the frequency power supply. In addition, in each of the high-frequency power supply units 2 and 3 shown in FIG. 3 and FIG. 4, when both the power 値 of the reflected wave of the own wave and the power 反射 of the reflected wave of the opponent side are equal to or lower than a predetermined threshold 使, each is high. In the configuration in which the output power of the frequency power sources 2 1 and 3 1 is increased, for example, it is possible to detect that only the reflected wave on the opponent side is equal to or lower than the threshold value set in advance, and the output is increased. As described in (b) and (d) of FIG. 7 , generally, it takes a long time to reflect the reflected wave generated on the high-frequency power source side where the output is increased, and the other side is not increased in output. The generated reflected wave is attenuated in a relatively short time. When the output on the other side is increased, it is sufficient to monitor the reflected wave generated on the high-frequency power supply side of the output side even if the output is increased. Case. Further, it is not limited to the method of determining whether or not the power 値 of the reflected wave is equal to or lower than a predetermined threshold ,, and is not limited to the case of using a logic circuit by the hardware method shown in FIGS. 3 and 4, for example, at each high frequency. The power supply units 2 and 3 are provided with a CPU ', and the CPU is used to perform soft judgment. In addition, it is not limited to the determination of the electric power 値 of the reflected wave in the control unit 100 that performs the operation control of the entire etching processing apparatus 1 when the high-frequency power supply units 2 and 3 perform the above-described determinations, of course, -30-201038143. As a result, it is judged whether or not the threshold 値 is equal to or less, and the output of each of the high-frequency power sources 21 and 31 is increased. Further, this determination is not limited to the case where the measurement result of the electric power 反射 of the reflected wave is transmitted to the opponent side as the reflected wave information as shown in the embodiment of FIG. 3 and FIG. 4, and it is judged whether or not the opponent side that receives the determination is In the method of the threshold 値 or less, it is also possible to determine whether or not the power 値 is equal to or lower than the threshold 可 of the output of the opponent side on the side of the high-frequency power source 2 1 and 3 1 of the power 计 of the reflected wave, and the opponent side displays the The judgment signal of the power 値 to form a critical 値 below is transmitted as reflected wave information. Further, the plasma processing apparatus in which a plurality of high-frequency power sources are provided is not limited to the parallel flat type shown in FIG. 1, for example, an inductively-coupled plasma type, such as a spiral coil and a lower electrode, respectively. The present invention can also be applied to a case where a high frequency power supply is provided. Further, in the above-described embodiment, when the plasma is raised, the high-frequency power sources 2 1 and 3 1 are formed after the threshold 値 of the reflected power of at least the other high-frequency power sources 3 1 and 2 1 . An example in which the output power of the high-frequency power sources 2 1 and 3 1 is increased in one stage will be described. However, an example applicable to the present invention is not limited to the rise of the plasma. For example, the purpose of changing the state of the etching processing apparatus 1 by the plasma formation area in the processing container 10, the adjustment of the electron temperature of the plasma, the adjustment of the electron density, etc., for example, as shown in Fig. 8 (a) and Fig. 8 (b) When the applied electric power of each of the high-frequency power supply units 2 and 3 on the source side of the bias side is increased from the electric power at the time of the first process to the electric power at the second process, for example, -31 - 201038143 is raised stepwise with the intermediate electric power therebetween. The invention is also applicable. Further, contrary to the example shown in FIG. 8, for example, as shown in FIGS. 9(a) and 9(b), each of the source side and the bias side is used for the purpose of changing the state of the etching processing apparatus 1. When the power applied to the power supply units 2 and 3 is gradually reduced from the power at the time of the first process to the power at the time of the second process, or when one of the powers is gradually increased, and the other is stepped down, the plural is high. The present invention is also applicable to the case where the output power of the frequency power source changes. Further, the change of the operating state in this case is also included, for example, when the etching processing apparatus 1 is stopped. In this case, the electric power at the time of the second process shown in Fig. 9 is zero. Further, the change (rise or fall) of the stepped output power is not limited to changing the output of each of the high-frequency power sources 31 and 21 in sequence, for example, one side is continuously divided into two stages to rise, and then the other side is continuously continuous. When the power is equal to or lower than the power 値 of the reflected wave of the high-frequency power sources 3 1 and 2 1 in the two stages, the output change of each stage may be performed. Further, the processing apparatus of the present invention is applicable to, for example, a treatment such as ashing or CVD (Chemical Vapor Deposition) using another processing gas to treat the object to be processed. Further, the object to be processed is not limited to a square substrate, and may be a circular semiconductor wafer or the like other than the FPD substrate or the substrate for a solar cell. [Brief Description of the Drawings] Fig. 1 is a longitudinal sectional side view showing the overall configuration of a plasma processing apparatus according to the present embodiment. -32- 201038143 Fig. 2 is a block diagram showing a configuration example of a high-frequency power supply unit provided in the plasma processing apparatus. Fig. 3 is an explanatory view showing an internal configuration of a high frequency power supply unit on the source side; Fig. 4 is an explanatory view showing an internal configuration of a high frequency power supply unit on a bias side; FIG. 5 is a first flowchart showing the supply operation of the high-frequency power at the time of starting the plasma processing apparatus. FIG. 6 is a second flowchart showing the supply operation of the high-frequency power. Fig. 7 is an explanatory view showing a state in which high-frequency power is supplied to the plasma processing apparatus in stages by the above-described supply operation. Fig. 8 is an explanatory view showing a state in which high-frequency power is supplied to the plasma processing apparatus in stages when the plasma state is adjusted. Fig. 9 is another explanatory view showing a state in which high-frequency power is supplied to the plasma processing apparatus in stages when the plasma state is adjusted. ❹ FIG. 1A is an explanatory view showing a state in which high-frequency power is supplied stepwise in a conventional plasma processing apparatus. [Description of main component symbols] S : FPD substrate (substrate) 1 : Etching processing device 1 〇 : Processing container 1 6 : Matching box 100 : Control section - 33 - 201038143 1 〇 1 : Control board 1 6 1 , 1 6 2 : Integration circuit 2: source high frequency power supply unit 2 1 : tube frequency power supply 22: timing signal generation unit 23: communication board 2 1 1 : power control unit 212: local frequency power supply body 2 1 3 : directional bond 2 1 4: reflected wave power meter 2 1 5 : traveling wave power meter 221, 224: comparator 2 2 2 : pulse output circuit 223 : single step multiple oscillator (OMV) 225 : negative circuit 3 : partial frequency power supply for bias兀3 1 : Local frequency power supply 3 2 : Timing signal generation unit 3 3 : Communication board 3 1 1 : Power control unit 3 1 2 : High-frequency power supply body 3 1 3 : Directional combiner 3 1 4 : Reflected wave power meter 3 1 5 : Progressive wave power meter -34- 201038143 3 2 1 , 3 2 4 : Comparator 3 22 : Pulse output circuit 3 23, 3 26 : OMV 3 2 5 : Negative circuit 3 2 7 : Ο R circuit 4 1 : lower electrode 5 1 : upper electrode 54 : processing gas supply unit
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