CN103650645B - Plasma generation supply unit and plasma generate parameter setting method - Google Patents

Plasma generation supply unit and plasma generate parameter setting method Download PDF

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Publication number
CN103650645B
CN103650645B CN201280033021.2A CN201280033021A CN103650645B CN 103650645 B CN103650645 B CN 103650645B CN 201280033021 A CN201280033021 A CN 201280033021A CN 103650645 B CN103650645 B CN 103650645B
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mentioned
frequency
time
plasma
action
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CN103650645A (en
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藤本直也
押田善之
加藤规一
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

Abstract

The invention provides a kind of plasma generation supply unit, the time till it can shorten to impedance matching, can treatment effeciency be improved.This plasma generation supply unit possesses: reference signal generating section, and it generates the reference signal of preset frequency; Power amplification portion, it carries out power amplification to reference signal and generates high frequency power signals; Test section, the row wave power that its detection high frequency power signals comprises and reflected wave powers; Control part, it makes the frequency of reference signal change, magnification ratio in power amplification portion is changed, wherein, carry out following plasma and generate action, namely in the very first time, carry out that control makes reference signal be fixed as first frequency and reflected wave powers becomes below the first performance number, in the second time thereafter, the frequency of scanning reference signal makes reflected wave powers become below the second performance number, and carry out finding out first frequency, the very first time, the second time the plasma of optimal value generate setting parameter action.

Description

Plasma generation supply unit and plasma generate parameter setting method
Technical field
The present invention relates to a kind of in order to generate high intensity light source and plasma generation supply unit that plasma uses and plasma generates parameter setting method, such as relate to carrying out in the plasma processing apparatus of the plasma treatment such as plasma ashing to the substrate for the manufacture of conductor integrated circuit device (hereinafter referred to as IC), in order to generate plasma generation supply unit that plasma uses and plasma generates parameter setting method.
Background technology
Such as, in the manufacturing process of the semiconductor device such as IC, LSI, after etching work procedure, in order to decompose the resist removing and be made up of unwanted organic substance, use a kind of plasma ashing apparatus (cineration device), it uses by discharging and the oxygen plasma of generation in containing the atmosphere of oxygen.In such plasma ashing apparatus, such as, in the reaction tube containing substrate, import oxygen, from high frequency electric source to being wound on the coil with electric current arranged around this reaction tube, in the gas of reaction tube inside, causing electric discharge and produce plasma.By comprise generate by discharging atomic group, ionized molecule gas, the resist on substrate is ashed, and becomes carbon dioxide, water etc. and is removed.
At this moment, in order to generate plasma, output frequency from high frequency electric source is mated with load impedance, but resonance frequency is also according to the kind of gas, pressure or apply power and change, and therefore makes the output frequency from high frequency electric source gradually change and carry out impedance matching.If the time lengthening to impedance matching, then the output circuit element of high frequency electric source is exposed to the reflected wave from load for a long time, the lifetime of be under pressure thus (fire damage) thus element.In addition, if the time lengthening to impedance matching, then the treatment effeciency (flow rate) of cineration device reduces.In following patent documentation 1, disclose following technology, namely, make the change of the frequency of oscillation of high frequency electric source make reflected wave powers minimum and carry out impedance matching.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2000-049000 publication
Summary of the invention
The problem that invention will solve
The object of the invention is to: provide a kind of plasma generation supply unit, plasma to generate parameter setting method, it is in order to solve the problem, time till shortening to impedance matching, reduce the output circuit element of high frequency electric source due to the pressure that is subject to from the reflected wave of load or the treatment effeciency improving plasma processing apparatus.
The scheme of dealing with problems
Representative configurations for plasma generation supply unit that solve the problem, of the present invention is as follows.That is, possess:
Reference signal generating section, it generates the reference signal of preset frequency;
Power amplification portion, it carries out power amplification to said reference signal thus generates high frequency power signals;
Test section, it detects row wave power and reflected wave powers that above-mentioned high frequency power signals comprises;
Control part, it makes the frequency of reference signal change for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the high frequency power signals generated by above-mentioned power amplification portion is supplied to and is arranged on outside and the plasma generating unit that generates plasma, the feature of this plasma generation supply unit is
Above-mentioned control part is configured to carry out following plasma and generates action, namely when providing above-mentioned high frequency power signals to above-mentioned plasma generating unit, in the predetermined very first time, carry out controlling to make the frequency of said reference signal to be fixed as predetermined beginning frequency and above-mentioned reflected wave powers becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, carry out the plasma that frequency scans the frequency of said reference signal to predetermined target frequency from above-mentioned and generate action, below the second performance number making above-mentioned reflected wave powers become predetermined, and be configured to generate the parameter of action and above-mentioned beginning frequency for above-mentioned plasma, the above-mentioned very first time, above-mentioned second time carries out plasma and generates setting parameter action, above-mentioned plasma generates setting parameter action and is configured to carry out following beginning frequency setting action, be from the value of the default value preset close to above-mentioned target frequency by above-mentioned beginning frequency setting, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, then, carry out following beginning frequency transmitting time set action, frequency setting by said reference signal is the updated value of above-mentioned beginning frequency, is set as the default value preset above-mentioned second time, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out following frequency scan time set action, frequency setting by said reference signal is the updated value of above-mentioned beginning frequency, is set as the updated value of the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the second new time.
The representative configurations that plasma of the present invention generates parameter setting method is as follows.Namely, that a kind of being set in carries out the establishing method that following plasma generates the parameter used in the plasma generating method of action, this plasma generation action is when providing high frequency power signals to the plasma generating unit generating plasma, in the predetermined very first time, the frequency of above-mentioned high frequency power signals is made to be fixed as predetermined beginning frequency, and the reflected wave powers that above-mentioned high frequency power signals comprises becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, from above-mentioned, frequency is below the second performance number that the frequency that predetermined target frequency scans above-mentioned high frequency power signals makes above-mentioned reflected wave powers become predetermined, wherein, above-mentioned parameter refers to above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned second time, the feature that this plasma generates parameter setting method is, possess: be from the value of the default value preset close to above-mentioned target frequency by above-mentioned beginning frequency setting, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned beginning frequency that can generate plasma and be set as the beginning frequency setting step of NEW BEGINNING frequency, it is the updated value of above-mentioned beginning frequency by the frequency setting of said reference signal, is set as the default value preset above-mentioned second time, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the beginning frequency transmitting time setting procedure of the new very first time,
By the frequency setting of said reference signal be the updated value of above-mentioned beginning frequency, is set as the updated value of the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the frequency scan time setting procedure of the second new time.
Invention effect
According to said structure, the time of impedance matching can be shortened to, reduce the pressure of output circuit element owing to being subject to from the reflected wave of load of high frequency electric source, or improve the treatment effeciency of plasma processing apparatus.
Accompanying drawing explanation
Fig. 1 is the vertical cross-section diagram of the plasma processing unit used in plasma ashing apparatus representing embodiments of the present invention.
Fig. 2 is the figure of the structure of the plasma generation supply unit representing embodiments of the present invention.
Fig. 3 represents that the plasma of embodiments of the present invention generates the figure of the time variations of row ripple in sequential and reflected wave.
Fig. 4 is the flow chart of that form the plasma generation sequential optimal treatment of embodiments of the present invention, under default value confirming operation process.
Fig. 5 is flow chart that form the plasma generation sequential optimal treatment of embodiments of the present invention, that start frequency setting process.
Fig. 6 is flow chart that form the plasma generation sequential optimal treatment of embodiments of the present invention, that start the setting process of frequency transmitting time.
Fig. 7 is flow chart that form the plasma generation sequential optimal treatment of embodiments of the present invention, frequency scan time setting process.
Embodiment
Then, with reference to accompanying drawing, embodiments of the present invention are described.In embodiments of the present invention, the plasma generation supply unit be used as in the plasma ashing apparatus of semiconductor-fabricating device is represented as an example.Fig. 1 is the vertical cross-section diagram of the plasma processing unit 10 used in plasma ashing apparatus representing embodiments of the present invention.
Plasma processing unit 10 is the plasma processing units of high frequency electrode-free discharge-type Semiconductor substrate, semiconductor element being implemented to ashing by dry process.Plasma processing unit 10 as shown in Figure 1, possesses the process space 45 of space and the wafer such as plasma generating space 30, holding semiconductor substrate 20 generating plasma, processes the plasma generating unit of the first row air chamber 74, second row air chamber 76, resonance coil 32 etc. of the below in space 45, provides the plasma generation supply unit 40 etc. of High frequency power to this plasma generating unit.Plasma generating space 30 is connected with process space 45, forms process chamber by plasma generating space 30 and process space 45.Such as configure above-mentioned plasma generating unit in the upside of the base plate 48 of the pallet as level, form plasma processing unit 10 in the configuration process space, downside 45 of base plate 48.
Plasma generating unit is made up of following: reaction vessel 31, consists of and can reduce pressure, and provides the reacting gas of plasma; Resonance coil 32, it is wound on the periphery of reaction vessel 31; Outer shield 52, it is configured in the periphery of resonance coil 32, and electrical grounding.Resonance coil 32 produces the coil of plasma for making it discharge in the gas of reaction vessel 31 inside.
In the present example, reaction vessel 31 is formed as cylindric by highly purified quartz glass, pottery, forms plasma generating space 30.In the present example, process chamber sidewalls 68 is formed by aluminium, formation processing space 45.Be communicated with between plasma generating space 30, process space 45, first row air chamber 74, second row air chamber 76, can gas be passed through.Upper and lower side is sealed by top board 54 and base plate 69 by plasma generating space 30, process space 45, first row air chamber 74, second row air chamber 76 airtightly.
In the bottom in process space 45, the pedestal (substrate-placing portion) 11 supported by multiple (such as 4) pillar 61 is set.Mounting is as the wafer 20 of processed substrate on the base 11.
Exhaustion plate 65 is arranged in the below of pedestal 11.Exhaustion plate 65 is fixed on base plate 69 via guide shaft 67.Elevation base plate 71 is set to freely move up and down for guiding with guide shaft 67.Elevation base plate 71 supports at least 3 lifter pins 13.
The through pedestal 11 of lifter pin 13, is provided with the wafer support sector 14 supporting wafer 20 at the top of lifter pin 13.By the lifting of lifter pin 13, wafer 20 can be loaded on the base 11, or rise from pedestal 11.Via base plate 69, the lifting shaft 73 of lifting drive division (omitting diagram) links with elevation base plate 71.Lifting drive division makes lifting shaft 73 be elevated, thus wafer support sector 14 is elevated via elevation base plate 71 and lifter pin 13.
Exhaustion plate 65 below pedestal 11 arranges communicating exhaust gas hole 75.By communicating exhaust gas hole 75, first row air chamber 74 is communicated with the second row air chamber 76 of the below being arranged on first row air chamber 74.Second row air chamber 76 is formed by exhaustion plate 65 and base plate 69.Second row air chamber 76 is communicated with the blast pipe 80 of through base plate 69.On blast pipe 80, from the upstream of gas flow, be sequentially provided as the APC(automatic pressure controller of pressure-regulating valve) valve 81, vacuum pump 82 as vacuum pumping hardware.Vacuum pump 82 is configured to: to the pressure (vacuum degree) carrying out vacuum exhaust in process chamber and make the pressure in process chamber become predetermined.APC valve 81 is electrically connected with control part 90 described later.Control part 90 is configured to: control to make the pressure in process chamber become the pressure of hope in the timing of hope to the aperture of APC valve 81, the volume control device of gas feed unit described later.Gas exhaust portion is formed by blast pipe 80, APC valve 81, vacuum pump 82.
On the top board 54 on the top of reaction vessel 31, set up at gas introduction port 33 and extend and the gas supply pipe 55 of the reacting gas of plasma generation for providing from gas feed unit.Gas supply pipe 55 is connected with oxygen feeding pipe 21.On oxygen feeding pipe 21, the source of oxygen 24, the MFC(mass flow controller as volume control device that provide oxygen are set sequentially respectively from the upstream of gas flow) 23 and open and close valve 22.Gas supply part is formed by oxygen feeding pipe 21, source of oxygen 24, MFC23, open and close valve 22.
MFC23 and open and close valve 22 are electrically connected with control part 90 described later.Control part 90 control MFC23 and open and close valve 22, make the kind of provided gas become the gaseous species of hope in the timing of hope, and the flow of the gas provided becomes the flow of hope in the timing of hope.
In addition, in reaction vessel 31, be provided with the baffle plate 60 be made up of quartz for the roughly circular plate type making the reacting gas imported from gas introduction port 33 flow along the inwall of reaction vessel 31.
Resonance coil 32 forms the standing wave of predetermined wavelength, therefore sets winding diameter, winding spacing, the number of turn make to resonate with fixing wavelength mode.That is, the integral multiple (1 times, 2 times of 1 wavelength the preset frequency of the electric power provided from plasma generation supply unit 40 electrical length of resonance coil 32 is provided ...) or be equivalent to the length of half-wavelength or 1/4 wavelength.Such as, the length of 1 wavelength is about 11 meters when 27.12MHz.
Inching electrical ground, but when this device initial is arranged or when treatment conditions change, is carried out to the electrical length of this resonance coil in the two ends of resonance coil 32, therefore at least one end of resonance coil 32 via movable screw tap 62 ground connection.Symbol 64 in Fig. 1 represents the dead earth of the opposing party.And then, when this device initial is arranged or when treatment conditions change, inching is carried out to the impedance of resonance coil 32, therefore between the two ends of the ground connection of resonance coil 32, forms power supply by movable screw tap 63.
Namely, resonance coil 32 possesses the grounding parts of electrical grounding at two ends, and between each grounding parts, possess the power supply that electric power is provided from plasma generation supply unit 40, and at least one grounding parts becomes the type variable grounding parts that can adjust position, power supply becomes the type variable power supply that can adjust position in addition.
In order to shield resonance coil 32 electromagnetic-wave leakage laterally, and between resonance coil 32, form the capacitive component formed required for resonant circuit, and outer shield 52 is set.Conductive materials such as general use aluminium alloy, copper or copper alloy and form outer shield 52 cylindricly.Outer shield 52 is configured from periphery such as interval about the 5 ~ 150mm of resonance coil 32.
Control part 90, except controlling plasma generation supply unit 40 as described later, also carries out the control of each constituting portion of plasma ashing apparatus.Control part 90 according to processing method (Control timing sequence of ashing process), the flow control carrying out the temperature control, Stress control, process gas etc. in process chamber and the Mechanical Driven control etc. wafer to be transported in process chamber etc.Control part 90 and display part 92, accept and be connected from the operating portion 91 of the instruction of operator, the storage part 93 that stores various data and processing method etc.
As hardware configuration, control part 90 possesses CPU(central arithmetic unit), store the memory of operation program of CPU.
Then, use Fig. 2 that the structure of plasma generation supply unit 40 is described.Fig. 2 is the figure of the structure of the plasma generation supply unit representing embodiments of the present invention.
In fig. 2,41 is reference signal generating section of the reference signal generating predetermined frequency, is frequency synthesizer circuit in the present example.Frequency synthesizer circuit 41 is such as connected with the crystal oscillator (not shown) producing the reference frequency signal being used for reference, according to the reference frequency signal from this crystal oscillator, export the reference frequency signal (such as 27.12MHz) of the integral multiple of this reference frequency signal or the frequency with integer division gained from frequency synthesizer circuit 41.Also can not use crystal oscillator, and use outside reference clock signal.
In addition, frequency synthesizer circuit 41 according to the instruction from control part 90, can change its output frequency centered by above-mentioned reference frequency signal in predetermined scope.
42 is amplify the power of the reference signal of the preset frequency generated by frequency synthesizer circuit 41 and generate the power amplification portion of high frequency power signals.The high frequency power signals generated by power amplification portion 42 outputs to the resonance coil 32 as load via test section 43 described later.Test section 43 is such as made up of CM type directional coupler, detects the row wave power that this high frequency power signals comprises and reflected wave powers, output to control part 90 from the high frequency power signals exported by power amplification portion 42.
Control part 90 is according to the reflected wave powers detected by test section 43, control frequency condensating synthesizering circuit 41 makes this reflected wave powers reduce, in addition according to the row wave power detected by test section 43 and reflected wave powers, control power amplification portion 42 and make to become predetermined power magnification.
In addition, also the control part controlling plasma generation supply unit 40 can be set respectively with the control part of the pressure of control treatment room etc.
Then, the plasma of plasma generation supply unit 40 generates the summary of action to use Fig. 3 to illustrate.Fig. 3 represents that the plasma of embodiments of the present invention generates the figure of sequential.
In figure 3, horizontal axis representing time.The longitudinal axis (left side) represents the electric power providing applying from plasma generation supply unit 40 to the resonance coil 32 as load.The longitudinal axis (right side) represents the frequency providing the electric power of applying from plasma generation supply unit 40 to the resonance coil 32 as load.
The output frequency of frequency synthesizer circuit 41 is set as predetermined beginning frequency F1(such as about 30MHz), at the moment t1 of Fig. 3, start electric power and apply, namely in power amplification portion 42, start power amplification (RF-ON).Be set as higher than the resonance frequency of the resonance coil 32 when providing plasma generation gas to plasma generating space 30 by starting frequency F1.In the present embodiment, as described later, by from frequency F1 start the output frequency reducing frequency synthesizer circuit 41 gradually, and reach resonance frequency through antiresonant frequency.By applying electric power under antiresonant frequency, can the gas exerts of plasma generation efficiently energy, easily can generate plasma.
If start power amplification (RF-ON) at moment t1, then along with the increase applying power, row wave power RF and reflected wave powers PR increases.In figure 3, from moment t1 to moment t3, row wave power RF and reflected wave powers PR is the value of equal extent.If reach the maximum reflection wave power PRmax(such as about 1kW that can allow in the value of moment t2 reflected wave powers PR), then stop the increase applying power, under the state suppressing at maximum reflection below wave power PRmax by reflected wave powers PR, with the scheduled time, applying power is roughly maintained fixing horizontal from moment t2 to t3.
Like this, under being maintained in the T1 time (such as during about 500ms) of t1 to t3 from the beginning of time the state starting frequency F1, after the plasma generation gas in the gas ions span 30 is provided for ionization, carry out the plasmarized energy.
In addition, the value of reflected wave powers PR is suppressed in the reason of maximum reflection below wave power PRmax to be to prevent the output equipment of electric power enlarging section 42 to be destroyed.
If the moment of the becoming t3 through the T1 time, then in the T2 time (such as during about 800ms) from moment t3 to moment t6, carry out frequency scanning action, make the output frequency of frequency synthesizer circuit 41 from frequency F1(such as about 30MHz) to target frequency F2(such as about 25MHz) gradually change.In the example in figure 3, from frequency F1 start to reduce frequency gradually, with this, improve impedance matching gradually.Falling in low-frequency way, if become frequency FM1 at moment t5, close to matching frequency (resonance frequency) FM2, then impedance matching is sharply in progress, and at moment t7, becomes impedance matching and becomes optimum and the power of reflected wave is minimum state.Like this, actual frequency scan time than set frequency scan time and the T2 time short.
During this period, along with impedance (moment t3) from frequency scanning is mated gradually, reflected wave powers PR reduces, and therefore while keeping that reflected wave powers PR is suppressed the state at maximum reflection below wave power PRmax, increases and applies power.Row wave power RF is applied thereby, it is possible to increase while the increase of inhibitory reflex wave power PR.In figure 3, indicate and reduce reflected wave powers PR gradually while increase the situation of row wave power PF from moment t3 to moment t5.
In addition, if from frequency scanning (moment t3) elapsed time and the moment of becoming t4, then the difference between row wave power PF and reflected wave powers PR increases, and this difference is predetermined value, more than such as 100W.Be the state of plasma igniting by this condition judgement.If become the state of plasma igniting, then stably generate plasma thereafter.
Along with from moment t5, impedance matching is sharply in progress, and reflected wave powers PR sharply reduces, and when becoming moment t7, reflected wave powers PR becomes minimum value.On the other hand, adjust row wave power PF by power amplification portion 42 to make to become predetermined setting and export (such as about 3kW).During moment t5 to moment t7, it is minimum for the output frequency of frequency synthesizer circuit 41 being adjusted to reflected wave powers PR, makes the output frequency of its following frequency condensating synthesizering circuit 41 make reflected wave powers PR be minimum in other words.
Like this, control part 90 is configured to: namely control, make when providing to the plasma generating unit generating plasma the high frequency power signals generated by power amplification portion 42, at predetermined very first time T1, the output frequency of the frequency synthesizer circuit 41 as reference signal is fixed as predetermined beginning frequency F1, reflected wave powers PR becomes predetermined the first performance number (such as maximum reflection wave power) below, at the second predetermined time T2 after very first time T1, carry out the frequency scanning action scanned, from frequency F1 scan the frequency of reference signal to predetermined target frequency F2, reflected wave powers PR is made to become predetermined the second performance number (such as minimum value) below, if roughly reach resonance frequency, if namely reach the frequency FM1(moment t5 that reflected wave powers starts sharply to reduce), then carry out frequency following action, namely following frequency condensating synthesizering circuit 41 output frequency and make reflected wave powers PR become predetermined the second performance number (such as minimum value) below, carry out plasma thus and generate action.
Then, illustrate generate sequential for finding out optimum plasma, namely can shorten to impedance matching till time and the plasma of pressure that the output circuit element reducing high frequency electric source is subject to due to the reflected wave from load generates the process of the control part 90 of sequential.
Fig. 4 ~ Fig. 7 is the flow chart that the plasma of embodiments of the present invention generates that sequential carries out the action of optimized plasma generation setting parameter, Fig. 4 is the confirming operation process under default value, Fig. 5 is the beginning frequency setting process for finding out optimum beginning frequency, Fig. 6 is the beginning frequency transmitting time setting process for finding out optimum beginning frequency transmitting time, and Fig. 7 is the frequency scan time setting process for finding out optimum frequency scan time.
In the present embodiment, this plasma generation sequential is carried out optimized process and is performed as the operation program of the CPU of control part 90, carries out optimization to transmitting time T1, the frequency scan time T2 of the beginning frequency F1 illustrated in figure 3, beginning frequency F1.
In addition, as illustrated in figure 3, generate in sequential at this plasma, starting frequency F1 is set to higher than the resonance frequency of the resonance coil 32 when adding plasma generation gas to plasma generating space 30, from frequency F1 start the output frequency reducing frequency synthesizer circuit 41 gradually, reach resonance frequency through antiresonant frequency thus.
In the diagram, control part 90 carries out optimized operation program set its default value (such as 30MHz) as beginning frequency F1(step S41 for plasma being generated sequential), set its default value (such as 1s) as starting frequency transmitting time T1(step S42), set its default value (such as 2s) as frequency scan time T2(step S43).These default values wait based on experiment and obtain, and are set to have very rich value, make it possible to positively produce plasma, and be stored in advance in storage part 93.
Then, control part 90 provides predetermined plasma generation gas (such as oxygen) to plasma generating space 30, by after being set to predetermined pressure (such as 2 holders) in plasma generating space 30, apply electric power (step S44) from plasma generation supply unit 40 to resonance coil 32.Namely, as illustrated in figure 3, control part 90 controls, make under the state that beginning frequency F1 is fixed as default value (30MHz), at beginning frequency transmitting time T1(default value: 1s) during, from plasma generation supply unit 40 to after resonance coil 32 is applied with electric power, at frequency scan time T2(default value: 2s) in, to target frequency F2(such as 25MHz) carry out frequency scanning action.
Step S44 electric power apply in during frequency scan time T2, control part 90 determines whether to have carried out plasma igniting (step S45), namely determine whether that the difference between row wave power PF and reflected wave powers PR increases, and this difference becomes predetermined value, more than such as 100W.
When not carrying out plasma igniting during frequency scan time T2 (no in step S45), control part 90 shows without plasma igniting in display part 92, stops electric power applying (step S47).In this case, at least one of above-mentioned each default value is inappropriate, and therefore operator reexamines each default value and in storage part 93, resets (step S48), again carries out instruction from operating portion 91 and makes from step S41.
(be) that control part 90 stops frequency scanning action and stops electric power applying (step S46), transfers to the beginning frequency setting process (step S51) of Fig. 5 in step S45 when having carried out plasma igniting.
In Figure 5, frequency F1 the value deducting predetermined Frequency and Amplitude gained from the set point of last time and default value is set as by control part 90, in this example embodiment, setting has deducted value and the 29.9MHz(step S51 of 0.1MHz gained from the set point (30MHz) of last time), its default value (1s) is set as start frequency transmitting time T1(step S52), its default value (2s) is set as frequency scan time T2(step S53).
Then, control part 90 is same with the confirming operation process under the default value of Fig. 4, predetermined plasma generation gas is provided in plasma generating space 30, by after being set to predetermined pressure in plasma generating space 30, apply electric power (step S54) from plasma generation supply unit 40 to resonance coil 32.Namely, control part 90 controls, make under the state that beginning frequency F1 is fixed as 29.9MHz, at beginning frequency transmitting time T1(default value: 1s) during, from plasma generation supply unit 40 to after resonance coil 32 is applied with electric power, at frequency scan time T2(default value: 2s) in, to target frequency F2(25MHz) carry out frequency scanning action.
During the frequency scan time T2 that the electric power of step S54 applies, control part 90 determines whether to have carried out plasma igniting (step S55).When having carried out plasma igniting (in step S55 be), control part 90 stops electric power applying (step S56) in termination frequency scanning action after, turn back to step S51, set from the set point (29.9MHz) of last time deducted the value of predetermined band width (0.1MHz) gained and 29.8MHz as frequency F1.Like this, step S51 ~ S56 is repeated until detect without plasma igniting.
When there is no a plasma igniting during frequency scan time T2 (no in step S55), control part 90 stops electric power applying (step S57), it is the optimal value starting frequency F1 by the nearest frequency setting being tested with plasma igniting, namely the value and the 28.1MHz(step S58 that the set point (such as 28.0MHz) of the beginning frequency F1 in the moment detected without plasma igniting are added predetermined Frequency and Amplitude (0.1MHz) gained is set), transfer to beginning frequency transmitting time setting process (step S61) of Fig. 6.
In figure 6, the optimal value (28.1MHz) obtained in the beginning frequency setting process of Fig. 5 is set as starting frequency F1(step S61 by control part 90), frequency transmitting time T1 the value having deducted predetermined time gained from the set point of last time and default value (1s) is set as, in this example embodiment, setting has deducted value and the 990ms(step S62 of 10ms gained from the set point of last time), set its default value (2s) as frequency scan time T2(step S63).
Then, control part 90 is same with the confirming operation process under the default value of Fig. 4, predetermined plasma generation gas is provided in plasma generating space 30, by after being set to predetermined pressure in plasma generating space 30, apply electric power (step S64) from plasma generation supply unit 40 to resonance coil 32.Namely, control part 90 controls, make under the state that beginning frequency F1 is fixed as optimal value (28.1MHz), beginning frequency transmitting time T1(990ms in above-mentioned setting) period, from plasma generation supply unit 40 to after resonance coil 32 is applied with electric power, at frequency scan time T2(default value: 2s) in, to target frequency F2(25MHz) carry out frequency scanning action.
In the electric power of step S64 applies, during frequency scan time T2, control part 90 determines whether to have carried out plasma igniting (step S65).
When having carried out plasma igniting (in step S65 be), control part 90 stops electric power applying (step S66) in termination frequency scanning action after, turn back to above-mentioned step S61, in step S62, frequency transmitting time T1 the value and 980ms that have deducted predetermined time (10ms) gained from the set point (990ms) of last time are set as.Like this, step S61 ~ S66 is repeated until detect without plasma igniting.
When there is no a plasma igniting during frequency scan time T2 (no in step S65), control part 90 stops electric power applying (step S67), the nearest beginning frequency transmitting time T1 being tested with plasma igniting is set as the optimal value starting frequency transmitting time T1, namely set the beginning frequency transmitting time T1(such as 490ms in the moment detected without plasma igniting) add value and the 500ms(step S68 of predetermined time (10ms) gained), transfer to the frequency scan time setting process (step S71) of Fig. 7.
In the figure 7, the optimal value (28.1MHz) obtained in the beginning frequency setting process of Fig. 5 is set as starting frequency F1(step S71 by control part 90), the optimal value (500ms) obtained in the beginning frequency transmitting time setting process of Fig. 6 is set as start frequency transmitting time T1(step S72), the value having deducted predetermined time gained from the set point of last time and default value is set as frequency scan time T2(step S62), in this example embodiment, the value and the 1990ms(step S73 that have deducted 10ms gained from the set point (2s) of last time is set).
Then, control part 90 is same with the confirming operation process under the default value of Fig. 4, predetermined plasma generation gas is provided in plasma generating space 30, by after being set to predetermined pressure in plasma generating space 30, apply electric power (step S74) from plasma generation supply unit 40 to resonance coil 32.Namely, control part 90 controls, make under the state that beginning frequency F1 is fixed as optimal value (28.1MHz), be set as the beginning frequency transmitting time T1(500ms of optimal value) during, from plasma generation supply unit 40 to after resonance coil 32 is applied with electric power, frequency scan time T2(1990ms in above-mentioned setting) in, to target frequency F2(25MHz) carry out frequency scanning action.
During frequency scan time T2 in the electric power of step S74 applies, control part 90 determines whether to have carried out plasma igniting (step S75).
When having carried out plasma igniting (in step S75 be), control part 90 stops electric power applying (step S76) in termination frequency scanning action after, turn back to above-mentioned step S71, in step S73, set and deducted the value of predetermined time (10ms) gained and 1980ms as frequency scan time T2 from the set point (1990ms) of last time.Like this, step S71 ~ S76 is repeated until detect without plasma igniting.
When there is no a plasma igniting during frequency scan time T2 (no in step S75), control part 90 stops electric power applying (step S77), the nearest frequency scan time T2 being tested with plasma igniting is set as the optimal value of frequency scan time T2, namely set the frequency scan time T2(such as 790ms in the moment detected without plasma igniting) add value and the 800ms(step S78 of predetermined time (10ms) gained), end process.
Sequential optimal treatment is generated by plasma described above, such as can obtain the 28.1MHz lower than the 30MHz of default value as the optimal value starting frequency F1, the 500ms less than the 1s of default value can be obtained as the optimal value starting frequency transmitting time T1, the optimal value of the 800ms less than the 2s of default value as frequency scan time T2 can be obtained.Like this, the such as time that plasma can be generated required for sequential shortened to about 1 ~ 2 second from existing about 5 seconds.
According to above-mentioned execution mode, the effect of following (1) ~ (4) at least can be obtained.
(1) time till can impedance matching being shortened to, reduce the pressure of output circuit element owing to being subject to from the reflected wave of load of high frequency electric source, or improve the treatment effeciency of plasma processing apparatus.
(2) process, therefore, it is possible to set optimum plasma efficiently to generate parameter according to the order of the process of beginning frequency setting, the setting process of beginning frequency transmitting time, frequency scan time setting process.
(3) generate in setting parameter action at plasma, if the difference in electric power applies between row wave power value and reflected wave powers value is greatly more than predetermined value, then be judged to be plasma igniting, if it is determined that for there being plasma igniting, then stop electric power applying in this moment and terminate plasma generation action, therefore with to impedance matching, carry out plasma generate compared with the situation of action, optimum plasma can be found out efficiently and generate parameter.
(4) in the process of beginning frequency setting, if reflected wave powers reaches the maximum reflection wave power value that can allow, then maintain this performance number, therefore, it is possible to suppress the output circuit element of high frequency electric source to be destroyed by reflected wave, maximum power can be provided to coil even load in addition, start the frequency setting processing time therefore, it is possible to shorten.
In addition, the present invention is not limited to above-mentioned execution mode, in the scope not departing from its main contents, certainly can carry out various change.
In confirming operation process (Fig. 4) under the default value of above-mentioned execution mode, be configured to: if it is determined that have plasma igniting in electric power applies, then electric power is stopped to apply in this moment, but also can also continue to apply electric power after being determined with plasma igniting, confirmation can carry out impedance matching.Namely, form and also can be: also continue to apply electric power after being determined with plasma igniting, if roughly reach resonance frequency, if namely reach the frequency FM1 that reflected wave powers starts sharply to reduce, then carry out frequency following action thereafter, confirm can carry out impedance matching under resonance frequency FM2.This is desirable positively generating in plasma.In addition, above-mentioned execution mode beginning frequency setting process (Fig. 5), start frequency transmitting time setting process (Fig. 6), in frequency scan time setting process (Fig. 7), if be judged to be plasma igniting in electric power applies, then electric power is stopped to apply in this moment, but also can be configured to: also continue to apply electric power after being judged to be plasma igniting, confirmation can impedance matching.Namely, also can be configured to: also continue to apply electric power after being judged to be plasma igniting, if roughly reach resonance frequency, if namely reach the frequency FM1 that reflected wave powers starts sharply to reduce, then carry out frequency following action thereafter, confirm can carry out impedance matching under resonance frequency FM2.
In addition, in the above-described embodiment, when the frequency of the frequency ratio resonance point of antiresonance point is high, from the frequency F1 higher than the frequency of antiresonance point to the target frequency F2 lower than the frequency of resonance point, frequency scanning is carried out from high frequency to low frequency, but also can be configured to, from the frequency F1 lower than the frequency of resonance point to the target frequency F2 higher than the frequency of antiresonance point, carry out frequency scanning from low frequency to high frequency.In this case, at least after carried out frequency scanning from low frequency to high frequency to the frequency of antiresonance point, it is desirable for carrying out frequency scanning to the frequency direction of resonance point from high frequency in raising plasma formation efficiency to low frequency.
In addition, when the frequency of the frequency ratio resonance point of antiresonance point is low, also can be configured to: from lower than the frequency of antiresonance point, frequency F1 is to the target frequency F2 higher than the frequency of resonance point, carries out frequency scanning from low frequency to high frequency.
In addition, in the above-described embodiment, carry out beginning frequency setting process (Fig. 5), start frequency transmitting time setting process (Fig. 6), frequency scan time setting process (Fig. 7), but when knowing the appropriate value starting frequency, can omit and start frequency setting process, in addition when knowing the appropriate value starting frequency transmitting time, can omit and start the setting process of frequency transmitting time, in addition when knowing the appropriate value of frequency scan time, frequency scan time setting process can be omitted.
In addition, in the beginning frequency setting process (Fig. 5) of above-mentioned execution mode, form and also can be: apply in process at primary electric power, beginning frequency setting value is deducted predetermined value (0.1MHz), but apply, in process, to carry out the confirming operation process (Fig. 4) under default value at primary electric power, after having reaffirmed and can carrying out plasma igniting, after secondary electric power applies process, beginning frequency setting value is deducted predetermined value (0.1MHz).
Equally, form and also can be: apply in process at the primary electric power starting frequency transmitting time setting process (Fig. 6), carry out the beginning frequency setting process (Fig. 5) of final time after plasma igniting, after having reaffirmed and can having carried out plasma igniting, after secondary electric power applies process, beginning frequency transmitting time set point is deducted predetermined value (10ms).In this case, be configured to: when primary electric power applies cannot carry out plasma igniting in process, beginning frequency setting value is added predetermined value (0.1MHz), again carry out beginning frequency transmitting time setting process (Fig. 6).
Equally, form and also can be: apply in process at the primary electric power of frequency scan time setting process (Fig. 7), carry out beginning frequency transmitting time setting process (Fig. 6) of final time after plasma igniting, after having reaffirmed and can having carried out plasma igniting, after secondary electric power applies process, frequency scan time set point is deducted predetermined value (10ms).In this case, be configured to: when primary electric power applies cannot carry out plasma igniting in process, beginning frequency transmitting time set point is added predetermined value (10ms), again carries out frequency scan time setting process (Fig. 7).
Following invention is at least comprised in the specified particular of this specification.That is,
First invention is a kind of plasma generation supply unit, and possess: reference signal generating section, it generates the reference signal of predetermined frequency, power amplification portion, it carries out power amplification to said reference signal and generates high frequency power signals, test section, it detects row wave power and reflected wave powers that above-mentioned high frequency power signals comprises, control part, it makes the frequency of reference signal change for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the plasma generating unit generating plasma to being arranged on outside provides the high frequency power signals generated by above-mentioned power amplification portion, the feature of this plasma generation supply unit is, above-mentioned control part is configured to carry out following plasma and generates action, namely when providing above-mentioned high frequency power signals to above-mentioned plasma generating unit, in the predetermined very first time, carry out controlling to make the frequency of said reference signal to be fixed as predetermined beginning frequency and above-mentioned reflected wave powers becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, from above-mentioned, frequency is below the second performance number that the frequency that predetermined target frequency scans said reference signal makes above-mentioned reflected wave powers become predetermined, and be configured to generate the parameter of action and above-mentioned beginning frequency for above-mentioned plasma, the above-mentioned very first time, above-mentioned second time carries out plasma and generates setting parameter action, above-mentioned plasma generates setting parameter action and is configured to carry out following beginning frequency setting action, namely be from the value of the default value preset close to above-mentioned target frequency by above-mentioned beginning frequency setting, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, then, carry out following beginning frequency transmitting time set action, namely in the updated value by the frequency setting of said reference signal being above-mentioned beginning frequency, is set as the default value preset above-mentioned second time, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out following frequency scan time set action, namely in the updated value by the frequency setting of said reference signal being above-mentioned beginning frequency, is set as the updated value of the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the second new time.
Second invention is the plasma generation supply unit of above-mentioned first invention, the feature of this plasma generation supply unit is, generate in setting parameter action at above-mentioned plasma, if generating above-mentioned row wave power in the execution of action at above-mentioned plasma becomes than more than the large predetermined value of above-mentioned reflected wave powers, then be judged as having carried out plasma igniting, thus terminate above-mentioned executory plasma generation action.
3rd invention is the plasma generation supply unit of above-mentioned first invention or the second invention, the feature of this plasma generation supply unit is, generate in the above-mentioned very first time of action at above-mentioned plasma, if above-mentioned reflected wave powers reaches above-mentioned first performance number, then former state maintains the power magnification in above-mentioned power amplification portion.
4th invention is the plasma generation supply unit of above-mentioned first invention ~ the 3rd invention, the feature of this plasma generation supply unit is, the first predetermined performance number of above-mentioned reflected wave powers is the maximum reflection wave power that can allow, and the second predetermined performance number of above-mentioned reflected wave powers is minimal reflection wave power.
5th invention is a kind of plasma generation supply unit, and possess: reference signal generating section, it generates the reference signal of predetermined frequency, power amplification portion, it carries out power amplification to said reference signal and generates high frequency power signals, test section, it detects row wave power and reflected wave powers that above-mentioned high frequency power signals comprises, control part, it makes the frequency of reference signal change for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the plasma generating unit generating plasma to being arranged on outside provides the high frequency power signals generated by above-mentioned power amplification portion, the feature of this plasma generation supply unit is, above-mentioned control part is configured to carry out following plasma and generates action, namely when providing above-mentioned high frequency power signals to above-mentioned plasma generating unit, in the predetermined very first time, carry out controlling to make the frequency of said reference signal to be fixed as predetermined beginning frequency and above-mentioned reflected wave powers becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, from above-mentioned, frequency is below the second performance number that the frequency that predetermined target frequency scans said reference signal makes above-mentioned reflected wave powers become predetermined, and be configured to generate the parameter of action and the above-mentioned very first time for above-mentioned plasma, above-mentioned second time carries out plasma and generates setting parameter action, above-mentioned plasma generates setting parameter action and is configured to carry out following beginning frequency transmitting time set action, namely at the default value that above-mentioned second time is set as presetting, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out following frequency scan time set action, namely in the updated value being set as the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the second new time.
6th invention is a kind of plasma generation supply unit, and possess: reference signal generating section, it generates the reference signal of predetermined frequency, power amplification portion, it carries out power amplification to said reference signal and generates high frequency power signals, test section, it detects row wave power and reflected wave powers that above-mentioned high frequency power signals comprises, control part, it makes the frequency of reference signal change for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the plasma generating unit generating plasma to being arranged on outside provides the high frequency power signals generated by above-mentioned power amplification portion, the feature of this plasma generation supply unit is, above-mentioned control part is configured to carry out following plasma and generates action, namely when providing above-mentioned high frequency power signals to above-mentioned plasma generating unit, in the predetermined very first time, carry out controlling to make the frequency of said reference signal to be fixed as predetermined beginning frequency and above-mentioned reflected wave powers becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, from above-mentioned, frequency is below the second performance number that the frequency that predetermined target frequency scans said reference signal makes above-mentioned reflected wave powers become predetermined, and be configured to generate the parameter of action and above-mentioned beginning frequency for above-mentioned plasma, or the above-mentioned very first time, or above-mentioned second time carry out plasma and generate setting parameter action, above-mentioned plasma generates setting parameter action and is configured to the plasma parameter set action of any one of carrying out following action, namely following beginning frequency setting action is carried out, be from the value of the default value preset close to above-mentioned target frequency by above-mentioned beginning frequency setting, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, or, carry out following beginning frequency transmitting time set action, at the default value that above-mentioned beginning frequency and above-mentioned second time are set as presetting, and the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the new very first time, or, carry out following frequency scan time set action, above-mentioned beginning frequency and the above-mentioned very first time are being set as default value, and the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the second new time.
7th invention is a kind of plasma generation supply unit, and possess: reference signal generating section, it generates the reference signal of predetermined frequency; Power amplification portion, it carries out power amplification to said reference signal and generates high frequency power signals; Test section, it detects row wave power and reflected wave powers that above-mentioned high frequency power signals comprises; Control part, it makes the frequency of reference signal change for said reference signal generating unit, for above-mentioned power amplification portion, power amplification incidence is changed; Plasma generating unit, it generates plasma by the high frequency power signals generated by above-mentioned power amplification portion, and the feature of this plasma generation supply unit is,
Above-mentioned control part is configured to carry out following plasma and generates action, namely when providing above-mentioned high frequency power signals to above-mentioned plasma generating unit, in the predetermined very first time, carry out controlling to make the frequency of said reference signal to be fixed as predetermined beginning frequency and above-mentioned reflected wave powers becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, from above-mentioned, frequency is below the second performance number that the frequency that predetermined target frequency scans said reference signal makes above-mentioned reflected wave powers become predetermined, and be configured to generate the parameter of action and above-mentioned beginning frequency for above-mentioned plasma, the above-mentioned very first time, above-mentioned second time carries out plasma and generates setting parameter action,
Above-mentioned plasma generates setting parameter action and is configured to carry out following beginning frequency setting action, namely be from the value of the default value preset close to above-mentioned target frequency by above-mentioned beginning frequency setting, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, then, carry out following beginning frequency transmitting time set action, namely in the updated value by the frequency setting of said reference signal being above-mentioned beginning frequency, is set as the default value preset above-mentioned second time, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out following frequency scan time set action, namely in the updated value by the frequency setting of said reference signal being above-mentioned beginning frequency, is set as the updated value of the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the second new time.
8th invention is that a kind of being set in carries out the establishing method that following plasma generates the parameter used in the plasma generating method of action, this plasma generation action is when providing high frequency power signals to the plasma generating unit generating plasma, in the predetermined very first time, make the frequency of above-mentioned high frequency power signals be fixed as predetermined beginning frequency and the reflected wave powers that above-mentioned high frequency power signals comprises becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, from above-mentioned, frequency is below the second performance number that the frequency that predetermined target frequency scans above-mentioned high frequency power signals makes above-mentioned reflected wave powers become predetermined, wherein, above-mentioned parameter is above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned second time, the feature that this plasma generates parameter setting method is, possess: be from the value of the default value preset close to above-mentioned target frequency by above-mentioned beginning frequency setting, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned beginning frequency that can generate plasma and be set as the beginning frequency setting step of NEW BEGINNING frequency, by the frequency setting of said reference signal be the updated value of above-mentioned beginning frequency, is set as the default value preset above-mentioned second time, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the beginning frequency transmitting time setting procedure of the new very first time, by the frequency setting of said reference signal be the updated value of above-mentioned beginning frequency, is set as the updated value of the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the frequency scan time setting procedure of the second new time.
The explanation of symbol
10: plasma processing unit; 11: pedestal; 13: lifter pin; 14: wafer support sector; 20: wafer; 21: supply pipe; 22: valve; 23:MFC; 24: supplies for gas; 30: plasma generating space; 31: reaction vessel; 32: resonance coil; 33: gas introduction port; 40: plasma generation supply unit; 41: frequency synthesizer circuit (reference signal generating section); 42: power amplification portion; 43: test section; 45: process space; 48: substrate; 52: outer shield; 54: top board; 55: gas supply pipe; 60: baffle plate; 61: pillar; 62: movable screw tap; 63: movable screw tap; 64: dead earth; 65: exhaustion plate; 67: guide shaft; 68: process chamber sidewalls; 69: base plate; 71: elevation base plate; 73: lifting shaft; 74: first row air chamber; 75: communicating exhaust gas hole; 76: second row air chamber; 80: blast pipe; 81:APC; 82: vacuum pump; 90: control part; 91: operating portion; 92: display part; 93: storage part.

Claims (4)

1. a plasma generation supply unit, possesses:
Reference signal generating section, it generates the reference signal of predetermined frequency;
Power amplification portion, it carries out power amplification to said reference signal and generates high frequency power signals;
Test section, it detects row wave power and reflected wave powers that above-mentioned high frequency power signals comprises;
Control part, it makes the frequency of reference signal change for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein
The plasma generating unit generating plasma to being arranged on outside provides the high frequency power signals generated by above-mentioned power amplification portion, and the feature of this plasma generation supply unit is,
Above-mentioned control part is configured to carry out following plasma and generates action, namely when providing above-mentioned high frequency power signals to above-mentioned plasma generating unit, in the predetermined very first time, carry out controlling to make the frequency of said reference signal to be fixed as predetermined original frequency and above-mentioned reflected wave powers becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, below the second performance number that the frequency scanning said reference signal from above-mentioned original frequency to predetermined target frequency makes above-mentioned reflected wave powers become predetermined
And be configured to generate the parameter of action and above-mentioned original frequency for above-mentioned plasma, the above-mentioned very first time, above-mentioned second time carry out plasma and generate setting parameter action,
Above-mentioned plasma generates setting parameter action and is configured to carry out following original frequency set action, namely above-mentioned original frequency is being set as from the value of the default value preset close to above-mentioned target frequency, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned original frequency that can generate plasma and be set as new original frequency, then, carry out following original frequency transmitting time set action, namely in the updated value by the frequency setting of said reference signal being above-mentioned original frequency, is set as the default value preset above-mentioned second time, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out following frequency scan time set action, namely in the updated value by the frequency setting of said reference signal being above-mentioned original frequency, is set as the updated value of the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the second new time.
2. plasma generation supply unit according to claim 1, is characterized in that,
Generate in setting parameter action at above-mentioned plasma, if generating above-mentioned row wave power in the execution of action at above-mentioned plasma becomes than more than the large predetermined value of above-mentioned reflected wave powers, then be judged as having carried out plasma igniting, thus terminate above-mentioned executory plasma generation action.
3. a plasma generation supply unit, possesses:
Reference signal generating section, it generates the reference signal of predetermined frequency;
Power amplification portion, it carries out power amplification to said reference signal and generates high frequency power signals;
Test section, it detects row wave power and reflected wave powers that above-mentioned high frequency power signals comprises;
Control part, it makes the frequency of reference signal change for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein
The plasma generating unit generating plasma to being arranged on outside provides the high frequency power signals generated by above-mentioned power amplification portion, and the feature of this plasma generation supply unit is,
Above-mentioned control part is configured to carry out following plasma and generates action, namely when providing above-mentioned high frequency power signals to above-mentioned plasma generating unit, in the predetermined very first time, carry out controlling to make the frequency of said reference signal to be fixed as predetermined original frequency and above-mentioned reflected wave powers becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, below the second performance number that the frequency scanning said reference signal from above-mentioned original frequency to predetermined target frequency makes above-mentioned reflected wave powers become predetermined
And be configured to generate the parameter of action and the above-mentioned very first time for above-mentioned plasma, above-mentioned second time carries out plasma and generates setting parameter action, above-mentioned plasma generates setting parameter action and is configured to carry out following original frequency transmitting time set action, namely at the default value that above-mentioned second time is set as presetting, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out following frequency scan time set action, namely in the updated value being set as the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the second new time.
4. a plasma generates parameter setting method, be set in carry out the establishing method that following plasma generates the parameter used in the plasma generating method of action, this plasma generation action to generate the plasma generating unit of plasma provide reference signal is carried out power amplification and generate high frequency power signals time, in the predetermined very first time, make the frequency of above-mentioned high frequency power signals be fixed as predetermined original frequency and the reflected wave powers that above-mentioned high frequency power signals comprises becomes below the first predetermined performance number, the second predetermined time after have passed through the above-mentioned very first time, below the second performance number that the frequency scanning above-mentioned high frequency power signals from above-mentioned original frequency to predetermined target frequency makes above-mentioned reflected wave powers become predetermined, wherein, above-mentioned parameter is above-mentioned original frequency, the above-mentioned very first time, above-mentioned second time, the feature that this plasma generates parameter setting method is, possess:
Above-mentioned original frequency is being set as from the value of the default value preset close to above-mentioned target frequency, and under the state that the above-mentioned very first time and above-mentioned second time are set as the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned original frequency that can generate plasma and be set as the original frequency setting procedure of new original frequency;
By the frequency setting of said reference signal be the updated value of above-mentioned original frequency, is set as the default value preset above-mentioned second time, the state being set as the value shortened from the default value preset the above-mentioned very first time, carry out above-mentioned plasma and generate action, find out the updated value of the above-mentioned very first time that can generate plasma and be set as the original frequency transmitting time setting procedure of the new very first time;
By the frequency setting of said reference signal be the updated value of above-mentioned original frequency, is set as the updated value of the above-mentioned very first time the above-mentioned very first time, the state that above-mentioned second time is set as the value shortened from the default value preset, carry out above-mentioned plasma and generate action, find out the updated value of above-mentioned second time that can generate plasma and be set as the frequency scan time setting procedure of the second new time.
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