CN103650645A - Power supply apparatus for generating plasma, method for setting parameter for generating plasma - Google Patents

Power supply apparatus for generating plasma, method for setting parameter for generating plasma Download PDF

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CN103650645A
CN103650645A CN201280033021.2A CN201280033021A CN103650645A CN 103650645 A CN103650645 A CN 103650645A CN 201280033021 A CN201280033021 A CN 201280033021A CN 103650645 A CN103650645 A CN 103650645A
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frequency
time
plasma
value
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CN103650645B (en
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藤本直也
押田善之
加藤规一
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
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Abstract

Provided is a power supply apparatus for generating plasma, whereby a time required for impedance matching can be shortened, and process efficiency can be improved. This power supply apparatus for generating plasma is provided with: a reference signal generating unit for generating reference signals at a predetermined frequency; a power amplifying unit, which amplifies the reference signals and generates high frequency power signals; a detecting unit that detects traveling wave power and reflected wave power, which are included in the high frequency power signals; and a control unit, which changes amplification degree of the power amplifying unit by changing the frequency of the reference signals. During a first period of time, the reflected wave power is controlled to be at a first power value or less by fixing the reference signals to a first frequency, then, during a second period of time, plasma generating operations of sweeping the frequency of the reference signals are performed such that the reflected wave power is at a second power value or less, and performs plasma generating parameter setting operations to find out optimum values of the first frequency, the first period of time, and the second period of time.

Description

Plasma generates with supply unit and plasma and generates parameter setting method
Technical field
The present invention relates to a kind of high intensity light source using in order to generate plasma is that plasma generates with supply unit and plasma generation parameter setting method, such as relating to, at the substrate to for the manufacture of conductor integrated circuit device (hereinafter referred to as IC), carry out in the plasma processing apparatus of the plasma treatment such as plasma ashing, the plasma using in order to generate plasma generates with supply unit and plasma and generates parameter setting method.
Background technology
For example, in the manufacturing process of the semiconductor device such as IC, LSI, after etching work procedure, in order to decompose, remove the resist being formed by unwanted organic substance, use a kind of plasma ashing apparatus (cineration device), it uses by the oxygen plasma that electric discharge produces in containing the atmosphere of oxygen.In such plasma ashing apparatus, for example in the reaction tube that has held substrate, import oxygen, from high frequency electric source, to being wound on this reaction tube around, the coil arranging provides electric current, causes electric discharge and generation plasma in the gas of reaction tube inside.By comprising the atomic group generating by discharging, the gas of ionized molecule, the resist on substrate is ashed, and becomes carbon dioxide, water etc. and is removed.
At this moment, in order to generate plasma, make to mate with load impedance from the output frequency of high frequency electric source, but resonance frequency is also according to the kind of gas, pressure or apply power and change, and therefore makes gradually change and carry out impedance matching from the output frequency of high frequency electric source.If till the time lengthening of impedance matching, the output circuit element of high frequency electric source is exposed to the reflected wave from load for a long time, be under pressure thus (fire damage) thereby the lifetime of element.In addition, if till the time lengthening of impedance matching, the treatment effeciency of cineration device (flow rate) reduces., the frequency of oscillation of high frequency electric source is changed make reflected wave power minimum and carry out impedance matching in following patent documentation 1, following technology is disclosed.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2000-049000 communique
Summary of the invention
The problem that invention will solve
The object of the invention is to: provide a kind of plasma to generate with supply unit, plasma and generate parameter setting method, it is in order to address the above problem, shorten to the time till impedance matching, the pressure that the output circuit element that reduces high frequency electric source is subject to due to the reflected wave from load or the treatment effeciency that improves plasma processing apparatus.
The scheme of dealing with problems
For plasma that address the above problem, of the present invention, generate by the exemplary configuration of supply unit as follows.That is, possess:
Reference signal generating unit, it generates the reference signal of preset frequency;
Power amplification portion, thus it carries out power amplification generation high frequency power signal to said reference signal;
Test section, it detects row wave power and reflected wave power that above-mentioned high frequency power signal comprises;
Control part, it changes the frequency of reference signal for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the high frequency power signal being generated by above-mentioned power amplification portion is offered to the plasma generating unit that is arranged on outside and generates plasma, this plasma generates and is characterised in that with supply unit
Above-mentioned control part is configured to and carries out following plasma generation action, when providing above-mentioned high frequency power signal to above-mentioned plasma generating unit, in the predetermined very first time, control and make the frequency of said reference signal be fixed as predetermined beginning frequency and above-mentioned reflected wave power becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, the plasma that carries out the frequency from above-mentioned beginning frequency to predetermined target frequency scanning said reference signal generates action, above-mentioned reflected wave power is become below the second predetermined performance number, and being configured to and generating the parameter of moving for above-mentioned plasma is above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned the second time carries out plasma and generates setting parameter action, the action of above-mentioned plasma generation setting parameter is configured to carries out following beginning frequency setting action, be about to above-mentioned beginning frequency setting for approach the value of above-mentioned target frequency from predefined default value, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, then, carry out following beginning frequency transmitting time and set action, the frequency setting that is about to said reference signal is the renewal value of above-mentioned beginning frequency, above-mentioned the second time is set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out the following frequency scanning time and set action, the frequency setting that is about to said reference signal is the renewal value of above-mentioned beginning frequency, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the second new time.
The exemplary configuration that plasma of the present invention generates parameter setting method is as follows., that a kind of being set in carried out the establishing method that following plasma generates the parameter of using in the plasma generating method of action, this plasma generates action when the plasma generating unit to generating plasma provides high frequency power signal, in the predetermined very first time, make the frequency of above-mentioned high frequency power signal be fixed as predetermined beginning frequency, and the reflected wave power that above-mentioned high frequency power signal comprises becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, the frequency that scans above-mentioned high frequency power signal from above-mentioned beginning frequency to predetermined target frequency becomes below the second predetermined performance number above-mentioned reflected wave power, wherein, above-mentioned parameter refers to above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned the second time, this plasma generates parameter setting method and is characterised in that, possess: by above-mentioned beginning frequency setting, be from predefined default value, to approach the value of above-mentioned target frequency, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as the beginning frequency setting step of NEW BEGINNING frequency, it by the frequency setting of said reference signal, is the renewal value of above-mentioned beginning frequency, above-mentioned the second time is set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the beginning frequency transmitting time of the new very first time and set step,
It by the frequency setting of said reference signal, is being the renewal value of above-mentioned beginning frequency, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the frequency scanning time of the second new time and set step.
Invention effect
According to said structure, can shorten to the time of impedance matching, the pressure that the output circuit element of reduction high frequency electric source is subject to due to the reflected wave from load, or the treatment effeciency of raising plasma processing apparatus.
Accompanying drawing explanation
Fig. 1 means the vertical cross-section diagram of the plasma processing unit using in plasma ashing apparatus of embodiments of the present invention.
Fig. 2 means that the plasma of embodiments of the present invention generates the figure by the structure of supply unit.
Fig. 3 means that the plasma of embodiments of the present invention generates the figure that time of row ripple in sequential and reflected wave changes.
Fig. 4 is that the plasma that forms embodiments of the present invention generates the flow chart that confirming operation sequential optimal treatment, under default value is processed.
Fig. 5 is that the plasma that forms embodiments of the present invention generates flow chart sequential optimal treatment, that start frequency setting processing.
Fig. 6 is that the plasma that forms embodiments of the present invention generates flow chart sequential optimal treatment, that start frequency transmitting time setting processing.
Fig. 7 is that the plasma that forms embodiments of the present invention generates flow chart sequential optimal treatment, that the setting of frequency scanning time is processed.
Embodiment
Then, with reference to the accompanying drawings of embodiments of the present invention.In embodiments of the present invention, represent to be as an example used as the plasma generation supply unit in the plasma ashing apparatus of semiconductor-fabricating device.Fig. 1 means the vertical cross-section diagram of the plasma processing unit using in plasma ashing apparatus 10 of embodiments of the present invention.
Plasma processing unit 10 is that Semiconductor substrate, semiconductor element are implemented to the plasma processing unit of the high frequency electrode-free discharge-type of ashing by dry process.Plasma processing unit 10 as shown in Figure 1, possesses processing space 45 that the space that generates plasma is the wafers 20 such as the plasma span 30, holding semiconductor substrate, the plasma generating unit of the first row air chamber 74 of processing the below in space 45, second row air chamber 76, resonance coil 32 etc., provide the plasma of High frequency power to generate with supply unit 40 etc. to this plasma generating unit.The plasma span 30 is connected with processing space 45, by the plasma span 30 and processing space 45, forms process chamber.For example the upside at the base plate 48 of the pallet as level configures above-mentioned plasma generating unit, in the downside configuration process space 45 of base plate 48, forms plasma processing unit 10.
Plasma generating unit is by forming below: reaction vessel 31, and it is configured to and can reduces pressure, and the reacting gas that provides plasma to use; Resonance coil 32, it is wound on the periphery of reaction vessel 31; Outside shielding 52, it is configured in the periphery of resonance coil 32, and electrical grounding.Resonance coil 32 is for the gas in reaction vessel 31 inside makes its electric discharge, to produce the coil of plasma.
In the present example, reaction vessel 31 is formed cylindric by highly purified quartz glass, pottery, forms the plasma span 30.In the present example, process chamber sidewalls 68 is formed by aluminium, formation processing space 45.Between the plasma span 30, processing space 45, first row air chamber 74, second row air chamber 76, be communicated with, can pass through gas.The plasma span 30, processing space 45, first row air chamber 74, second row air chamber 76 seal upper and lower side airtightly by top board 54 and base plate 69.
In the bottom of processing space 45, the pedestal (substrate-placing portion) 11 of for example, being supported by a plurality of (4) pillar 61 is set.On pedestal 11, mounting is as the wafer 20 of processed substrate.
Below pedestal 11, set exhaustion plate 65.Exhaustion plate 65 is fixed on base plate 69 via guide shaft 67.It is to guide free lifting to move that elevation base plate 71 is set to take guide shaft 67.Elevation base plate 71 is supported at least 3 lifter pins 13.
Lifter pin 13 connects pedestal 11, is provided with the wafer support sector 14 that supports wafer 20 at the top of lifter pin 13.By the lifting of lifter pin 13, wafer 20 can be positioned on pedestal 11, or rise from pedestal 11.Via base plate 69, the lifting shaft 73 of lifting drive division (omitting diagram) links with elevation base plate 71.Lifting drive division makes lifting shaft 73 liftings, thereby wafer support sector 14 carries out lifting via elevation base plate 71 and lifter pin 13.
Exhaustion plate 65 below pedestal 11 arranges exhaust intercommunicating pore 75.By exhaust intercommunicating pore 75, first row air chamber 74 is communicated with the second row air chamber 76 that is arranged on the below of first row air chamber 74.Second row air chamber 76 is formed by exhaustion plate 65 and base plate 69.Second row air chamber 76 is communicated with the blast pipe 80 that connects base plate 69.On blast pipe 80, from the upstream of gas flow, start to be sequentially provided as the APC(automatic pressure controller of pressure-regulating valve) valve 81, as the vacuum pump 82 of vacuum pumping hardware.Vacuum pump 82 is configured to: to carrying out vacuum exhaust in process chamber, make the pressure in process chamber become predetermined pressure (vacuum degree).APC valve 81 is electrically connected to control part 90 described later.Control part 90 is configured to: the volume control device of the aperture of APC valve 81, gas feed unit described later is controlled to the pressure making in process chamber becomes the pressure of hope in the timing of hope.By blast pipe 80, APC valve 81, vacuum pump 82, form gas exhaust portion.
On the top board 54 on the top of reaction vessel 31, at gas introduction port 33, set up from gas feed unit and extend and for the gas supply pipe 55 of the reacting gas that needed plasma generation uses is provided.Gas supply pipe 55 is connected with oxygen supply pipe 21.On oxygen supply pipe 21, from the upstream of gas flow, start to arrange sequentially respectively the source of oxygen of oxygen 24 is provided, as the MFC(mass flow controller of volume control device) 23 and open and close valve 22.By oxygen supply pipe 21, source of oxygen 24, MFC23, open and close valve 22, form gas supply part.
MFC23 and open and close valve 22 are electrically connected to control part 90 described later.Control part 90 is controlled MFC23 and open and close valve 22, make the kind of provided gas in the timing of hope, become the gaseous species of hope, and the flow of the gas providing becomes the flow of hope in the timing of hope.
In addition, in reaction vessel 31, be provided with the baffle plate being formed by quartz 60 of the roughly circular plate type that reacting gas for making to import from gas introduction port 33 flows along the inwall of reaction vessel 31.
Resonance coil 32 forms the standing wave of predetermined wavelengths, therefore sets the wavelength mode that winding diameter, winding spacing, the number of turn make to fix and resonates.That is, the electrical length of resonance coil 32 is set as from plasma, generate (1 times, 2 times of the integral multiples of 1 wavelength the preset frequency of the electric power provide with supply unit 40 ...) or be equivalent to the length of half-wavelength or 1/4 wavelength.For example, the length of 1 wavelength is about 11 meters in the situation that of 27.12MHz.
Inching electrical ground, but when initial setting of this device or during treatment conditions change, is carried out to the electrical length of this resonance coil in the two ends of resonance coil 32, thus at least one end of resonance coil 32 via movable screw tap 62 ground connection.Symbol 64 in Fig. 1 represents the opposing party's dead earth.And then, when initial setting of this device or during treatment conditions change, the impedance of resonance coil 32 is carried out to inching, therefore, between the two ends of the ground connection of resonance coil 32, by movable screw tap 63, form power supply.
; resonance coil 32 possesses the grounding parts of electrical grounding at two ends; and between each grounding parts, possess from plasma and generate the power supply that electric power is provided with supply unit 40; and at least one grounding parts becomes the type variable grounding parts that can adjust position, power supply becomes the type variable power supply that can adjust position in addition.
For resonance coil 32 electromagnetic-wave leakage is laterally shielded, and and resonance coil 32 between form to form the needed capacitive component of resonant circuit, and outside shielding 52 is set.Generally use the conductive materials such as aluminium alloy, copper or copper alloy and form outside shielding 52 cylindricly.From the periphery of resonance coil 32, for example configure outside shielding 52 in 5～150mm left and right in interval.
Control part 90 generates with supply unit 40 except controlling as described later plasma, also carries out the control of each formation portion of plasma ashing apparatus.Control part 90 is according to processing method (ashing process control sequential), carries out that temperature in process chamber is controlled, pressure is controlled, processes the flow control of gas etc. and Mechanical Driven control that wafer is transported in process chamber etc. etc.Control part 90 and display part 92, the storage part 93 of accepting from operating portion 91, store various kinds of data and the processing method etc. of operator's indication are connected.
As hardware configuration, control part 90 possesses CPU(central arithmetic unit), the memory of operation program of storage CPU.
Then, use Fig. 2 to illustrate that plasma generates the structure with supply unit 40.Fig. 2 means that the plasma of embodiments of the present invention generates the figure by the structure of supply unit.
In Fig. 2, the 41st, generate the reference signal generating unit of the reference signal of predetermined frequency, be frequency synthesizer circuit in the present example.Frequency synthesizer circuit 41 is for example connected with the crystal oscillator with reference to frequency signal (not shown) producing for reference, according to from this crystal oscillator with reference to frequency signal, from frequency synthesizer circuit 41 these integral multiples with reference to frequency signal of output or for example, with the reference frequency signal (27.12MHz) of the frequency of integer division gained.Also can not use crystal oscillator, and use outside reference clock signal.
In addition, frequency synthesizer circuit 41 can, according to the indication from control part 90, change its output frequency centered by above-mentioned reference frequency signal in predetermined scope.
The 42nd, the power of the reference signal of the preset frequency being generated by frequency synthesizer circuit 41 is amplified and generates the power amplification portion of high frequency power signal.The high frequency power signal being generated by power amplification portion 42 outputs to the resonance coil 32 as load via test section 43 described later.Test section 43 for example consists of CM type directional coupler, from the high frequency power signal by 42 outputs of power amplification portion, detects row wave power and the reflected wave power that this high frequency power signal comprises, outputs to control part 90.
Control part 90 bases are by the detected reflected wave power of test section 43, control frequency condensating synthesizering circuit 41 makes this reflected wave power reduction, basis is by the detected row wave power of test section 43 and reflected wave power in addition, and power ratio control enlarging section 42 makes to become predetermined power magnification.
In addition, also can arrange respectively and control plasma and generate the control part with supply unit 40 with the control part of controlling the pressure etc. of process chamber.
Then, use Fig. 3 to illustrate that plasma generates the summary that generates action with the plasma of supply unit 40.Fig. 3 means that the plasma of embodiments of the present invention generates the figure of sequential.
In Fig. 3, transverse axis represents the time.The longitudinal axis (left side) represents to generate and to the resonance coil 32 as load, provide the electric power applying with supply unit 40 from plasma.The longitudinal axis (right side) represents to generate the frequency of the electric power applying is provided to the resonance coil 32 as load with supply unit 40 from plasma.
The beginning frequency F1(that the output frequency of frequency synthesizer circuit 41 is set as being scheduled to is about 30MHz for example), at the moment of Fig. 3 t1, start electric power and apply, in power amplification portion 42, start power amplification (RF-ON).By starting frequency F1, that the resonance frequency of the resonance coil 32 when providing plasma to generate with gas to the plasma span 30 is provided is high.In the present embodiment, as described later, by start to reduce gradually the output frequency of frequency synthesizer circuit 41 from starting frequency F1, and reach resonance frequency through antiresonant frequency.By apply electric power under antiresonant frequency, plasma generates and uses gas exerts energy efficiently, can easily generate plasma.
If start power amplification (RF-ON) at moment t1, be accompanied by the increase that applies power, row wave power RF and reflected wave power P R increase.In Fig. 3, from moment t1 to moment t3, row wave power RF and reflected wave power P R are the values of equal extent.If be able to for example about 1kW of the maximum reflection wave power PRmax(that allows in the value of moment t2 reflected wave power P R), stop applying the increase of power, reflected wave power P R is being suppressed under the state below maximum reflection wave power PRmax, from moment t2 to t3, with the scheduled time, will applying power and roughly maintain fixing horizontal.
Like this, for example, be maintained under the state that starts frequency F1 carving from the outset the T1 time (during about 500ms) of t1 to t3, to the plasma in the gas ions span 30, generate the energy that is provided for carrying out after ionization plasma with gas.
In addition the reason value of reflected wave power P R being suppressed at below maximum reflection wave power PRmax, is destroyed in order to prevent the output equipment of electric power enlarging section 42.
If become t3 constantly through the T1 time, during T2 time from moment t3 to moment t6 (for example, during about 800ms), carry out frequency scanning action, the output frequency that makes frequency synthesizer circuit 41 is from starting for example about 30MHz of frequency F1() to target frequency F2(about 25MHz for example) gradually change.In the example of Fig. 3, from starting frequency F1, start to reduce gradually frequency, follow this, improved gradually impedance matching.In falling low-frequency way, if become frequency FM1 at moment t5, approach matching frequency (resonance frequency) FM2, impedance matching sharply makes progress, and at moment t7, becomes that impedance matching becomes optimum and the state of the power minimum of reflected wave.Like this, the actual frequency scanning time is that the T2 time is short than the frequency scanning time setting.
During this period, along with impedance (t3 constantly) from frequency scanning is mated gradually, reflected wave power P R reduces, and therefore, when keeping that reflected wave power P R is suppressed to the state below maximum reflection wave power PRmax, increases and applies power.Thus, can in the increase of inhibitory reflex wave power PR, increase and apply row wave power RF.In Fig. 3, Yi Bian on one side express and reduce gradually the situation that reflected wave power P R increases row wave power PF from moment t3 to moment t5.
In addition, if from frequency scanning (constantly t3) elapsed time and become t4 constantly, the poor increase between row wave power PF and reflected wave power P R, this is poor for predetermined value, more than for example 100W.The state that is plasma igniting by this condition judgement.If become the state of plasma igniting, stably generate thereafter plasma.
Along with sharply making progress since moment t5 impedance matching, reflected wave power P R sharply reduces, and when becoming moment t7, reflected wave power P R becomes minimum value.On the other hand, by power amplification portion 42, adjust row wave power PF and make to become predetermined setting output (for example about 3kW).During from moment t5 to moment t7, the output frequency of frequency synthesizer circuit 41 is adjusted to reflected wave power P R for minimum, make in other words the output frequency of its following frequency condensating synthesizering circuit 41 make reflected wave power P R for minimum.
Like this, control part 90 is configured to: control, make when the plasma generating unit to generating plasma provides the high frequency power signal being generated by power amplification portion 42, at predetermined very first time T1, the output frequency of the frequency synthesizer circuit as reference signal 41 is fixed as to predetermined beginning frequency F1, reflected wave power P R for example becomes, below the first predetermined performance number (maximum reflection wave power), in the second predetermined time T 2 after very first time T1, the frequency scanning action scanning, from starting frequency F1 to the frequency of predetermined target frequency F2 scanning reference signal, reflected wave power P R is for example become, below the second predetermined performance number (minimum value), if roughly reach resonance frequency, if reach the frequency FM1(moment t5 that reflected wave power starts sharply to reduce), carry out frequency and follow action, it is the output frequency of following frequency condensating synthesizering circuit 41 and reflected wave power P R is for example become, below the second predetermined performance number (minimum value), carry out thus plasma and generate action.
Then, illustrate that the plasma of the pressure that output circuit element for finding out optimum plasma and generating sequential, can shorten to the time till impedance matching and reduce high frequency electric source is subject to due to the reflected wave from load generates the processing of the control part 90 of sequential.
Fig. 4～Fig. 7 is that the plasma of embodiments of the present invention generates the flow chart that sequential is carried out the action of optimized plasma generation setting parameter, Fig. 4 is that the confirming operation under default value is processed, Fig. 5 processes for finding out the beginning frequency setting of optimum beginning frequency, Fig. 6 sets processing for finding out the beginning frequency transmitting time of optimum beginning frequency transmitting time, and Fig. 7 sets processing for finding out the frequency scanning time of optimum frequency scanning time.
In the present embodiment, this plasma generates sequential to carry out optimized processing and carries out as the operation program of the CPU of control part 90, to carrying out optimization in beginning frequency F1 illustrated in fig. 3, the transmitting time T1, the frequency scanning time T 2 that start frequency F1.
In addition, as illustrated in fig. 3, at this plasma, generate in sequential, starting frequency F1, to be set to the resonance frequency of the resonance coil 32 when adding plasma to generate with gas to the plasma span 30 high, from starting frequency F1, start to reduce gradually the output frequency of frequency synthesizer circuit 41, through antiresonant frequency, reach resonance frequency thus.
In Fig. 4, control part 90 carries out optimized operation program and sets its default value (for example 30MHz) as starting frequency F1(step S41 for plasma being generated to sequential), set its default value (for example 1s) as starting frequency transmitting time T1(step S42), set its default value (for example 2s) as frequency scanning time T 2(step S43).These default values wait and obtain based on experiment, are set to and have very rich value, make it possible to positively produce plasma, and pre-stored in storage part 93.
Then, control part 90 provides predetermined plasma for example to generate, with gas (oxygen) to the plasma span 30, for example in by the plasma span 30, be made as, after predetermined pressure (2 holders), from plasma, generate and to resonance coil 32, apply electric power (step S44) with supply unit 40.; as illustrated in fig. 3; control part 90 is controlled; make be fixed as under the state of default value (30MHz) starting frequency F1; starting frequency transmitting time T1(default value: 1s); from plasma, generate and to have applied electric power to resonance coil 32 with supply unit 40, at frequency scanning time T 2(default value: 2s), to target frequency F2(25MHz for example) carry out frequency scanning action.
In the electric power of step S44 applies during frequency scanning time T 2, control part 90 determines whether and has carried out plasma igniting (step S45), determine whether it is poor increase the between row wave power PF and reflected wave power P R, and this difference becomes predetermined value, more than for example 100W.
In the situation that frequency scanning time T 2 during do not carry out plasma igniting (S45 is no in step), control part 90 shows without plasma igniting in display part 92, stops electric power and applies (step S47).In this case, at least one of above-mentioned each default value is inappropriate, so operator reexamines each default value and in storage part 93, reset (step S48), again from operating portion 91, indicates and makes from step S41.
In the situation that having carried out plasma igniting (in step, S45 is), control part 90 termination frequency scannings are moved and are stopped electric power and apply (step S46), transfer to the beginning frequency setting of Fig. 5 and process (step S51).
In Fig. 5, control part 90 is that the value that default value has deducted predetermined Frequency and Amplitude gained is set as frequency F1 by the set point since last time, in this example, the value that setting has deducted 0.1MHz gained from the set point (30MHz) of last time is 29.9MHz(step S51), its default value (1s) is set as starting frequency transmitting time T1(step S52), its default value (2s) is set as to frequency scanning time T 2(step S53).
Then, confirming operation under the default value of control part 90 and Fig. 4 is processed same, in the plasma span 30, provide predetermined plasma generation gas, in by the plasma span 30, be made as after predetermined pressure, from plasma, generate and to resonance coil 32, apply electric power (step S54) with supply unit 40.; control part 90 is controlled; make be fixed as under the state of 29.9MHz starting frequency F1; starting frequency transmitting time T1(default value: 1s); from plasma, generate and applied electric power to resonance coil 32 with supply unit 40; at frequency scanning time T 2(default value: 2s), to target frequency F2(25MHz) carry out frequency scanning action.
During the frequency scanning time T 2 applying at the electric power of step S54, control part 90 determines whether and has carried out plasma igniting (step S55).In the situation that having carried out plasma igniting (in step, S55 is), control part 90 stops electric power ending frequency scanning action and applies after (step S56), turn back to step S51, setting the value that has deducted predetermined band width (0.1MHz) gained since the set point (29.9MHz) of last time is that 29.8MHz is as frequency F1.Like this, repeat step S51～S56 until detect without plasma igniting.
In the situation that frequency scanning time T 2 during there is no plasma igniting (S55 is no in step), control part 90 stops electric power and applies (step S57), by the nearest frequency setting that is tested with plasma igniting, it is the optimal value that starts frequency F1, set the set point (for example 28.0MHz) detecting without the beginning frequency F1 in moment of plasma igniting added to the value of predetermined Frequency and Amplitude (0.1MHz) gained is 28.1MHz(step S58), the beginning frequency transmitting time of transferring to Fig. 6 is set and is processed (step S61).
In Fig. 6, the optimal value (28.1MHz) that control part 90 is obtained during the beginning frequency setting at Fig. 5 is processed is set as starting frequency F1(step S61), by the set point since last time, be that the value that default value (1s) has deducted predetermined time gained is set as frequency transmitting time T1, in this example, the value that setting has deducted 10ms gained from the set point of last time is 990ms(step S62), set its default value (2s) as frequency scanning time T 2(step S63).
Then, confirming operation under the default value of control part 90 and Fig. 4 is processed same, in the plasma span 30, provide predetermined plasma generation gas, in by the plasma span 30, be made as after predetermined pressure, from plasma, generate and to resonance coil 32, apply electric power (step S64) with supply unit 40.; control part 90 is controlled; make be fixed as under the state of optimal value (28.1MHz) starting frequency F1; beginning frequency transmitting time T1(990ms in above-mentioned setting) during; from plasma, generate and applied electric power to resonance coil 32 with supply unit 40; at frequency scanning time T 2(default value: 2s), to target frequency F2(25MHz) carry out frequency scanning action.
In the electric power of step S64 applies, during frequency scanning time T 2, control part 90 determines whether and has carried out plasma igniting (step S65).
In the situation that having carried out plasma igniting (in step, S65 is), control part 90 stops electric power ending frequency scanning action and applies after (step S66), turn back to above-mentioned step S61, in step S62, the value that the set point since last time (990ms) has been deducted to predetermined time (10ms) gained is that 980ms is set as frequency transmitting time T1.Like this, repeat step S61～S66 until detect without plasma igniting.
In the situation that frequency scanning time T 2 during there is no plasma igniting (S65 is no in step), control part 90 stops electric power and applies (step S67), the nearest beginning frequency transmitting time T1 that is tested with plasma igniting is set as starting to the optimal value of frequency transmitting time T1, set and will detect the 490ms for example without the beginning frequency transmitting time T1(in moment of plasma igniting) add that the value of predetermined time (10ms) gained is 500ms(step S68), the frequency scanning time of transferring to Fig. 7 is set and processes (step S71).
In Fig. 7, the optimal value (28.1MHz) that control part 90 is obtained during the beginning frequency setting at Fig. 5 is processed is set as starting frequency F1(step S71), beginning frequency transmitting time at Fig. 6 is set to the optimal value (500ms) of obtaining in processing and be set as starting frequency transmitting time T1(step S72), by the set point from last time, be that the value that default value has deducted predetermined time gained is set as frequency scanning time T 2(step S62), in this example, setting the value that has deducted 10ms gained from the set point (2s) of last time is 1990ms(step S73).
Then, confirming operation under the default value of control part 90 and Fig. 4 is processed same, in the plasma span 30, provide predetermined plasma generation gas, in by the plasma span 30, be made as after predetermined pressure, from plasma, generate and to resonance coil 32, apply electric power (step S74) with supply unit 40.; control part 90 is controlled; make be fixed as under the state of optimal value (28.1MHz) starting frequency F1; be set as the beginning frequency transmitting time T1(500ms of optimal value) during; from plasma, generate and applied electric power to resonance coil 32 with supply unit 40; frequency scanning time T 2(1990ms in above-mentioned setting) in, to target frequency F2(25MHz) carry out frequency scanning action.
During frequency scanning time T 2 in the electric power of step S74 applies, control part 90 determines whether and has carried out plasma igniting (step S75).
In the situation that having carried out plasma igniting (in step, S75 is), control part 90 stops electric power ending frequency scanning action and applies after (step S76), turn back to above-mentioned step S71, in step S73, setting the value that has deducted predetermined time (10ms) gained from the set point (1990ms) of last time is that 1980ms is as frequency scanning time T 2.Like this, repeat step S71～S76 until detect without plasma igniting.
In the situation that there is no plasma igniting during frequency scanning time T 2 (in step, S75 is no), control part 90 stops electric power and applies (step S77), the nearest frequency scanning time T 2 that is tested with plasma igniting is set as to the optimal value of frequency scanning time T 2, set and will detect the 790ms for example without the frequency scanning time T 2(in moment of plasma igniting) add that the value of predetermined time (10ms) gained is 800ms(step S78), end process.
By plasma described above, generate sequential optimal treatment, for example can access than the low 28.1MHz of the 30MHz of default value as the optimal value that starts frequency F1, can access than the little 500ms of the 1s of default value as the optimal value that starts frequency transmitting time T1, can access the optimal value as frequency scanning time T 2 than the little 800ms of the 2s of default value.Like this, for example plasma can be generated to the needed time of sequential shortened to about 1～2 second from existing about 5 seconds.
According to above-mentioned execution mode, at least can access the effect of following (1)～(4).
(1) can shorten to the time till impedance matching, reduce the pressure that the output circuit element of high frequency electric source is subject to due to the reflected wave from load, or improve the treatment effeciency of plasma processing apparatus.
(2) according to beginning frequency setting, process, start the order that the setting of frequency transmitting time is processed, the setting of frequency scanning time is processed and process, therefore can set efficiently optimum plasma generation parameter.
(3) at plasma, generate in setting parameter action, if apply difference between middle row wave power value and reflected wave performance number greatly to more than predetermined value at electric power, be judged to be plasma igniting, if be judged to be plasma igniting, at this, constantly stopping electric power applying and finishes plasma generation and move, therefore with till the situation that plasma generates action is carried out in impedance matching compares, can find out efficiently optimum plasma and generate parameter.
(4) in starting frequency setting processing, if reflected wave power has reached the maximum reflection wave power value that can allow, maintain this performance number, the output circuit element that therefore can suppress high frequency electric source is reflected ripple and destroys, can provide maximum power to coil even load in addition, therefore can shorten and start the frequency setting processing time.
In addition, the present invention is not limited to above-mentioned execution mode, in the scope that does not depart from its main contents, certainly can carry out various changes.
Confirming operation under the default value of above-mentioned execution mode is processed in (Fig. 4), be configured to: if judged, in electric power applies, have plasma igniting, at this, constantly stopping electric power applying, but also can after being determined with plasma igniting, also continue to apply electric power, confirmation can be carried out impedance matching.; form and can be also: after being determined with plasma igniting, also continue to apply electric power, if roughly reach resonance frequency, if reach the frequency FM1 that reflected wave power starts sharply to reduce; carry out thereafter frequency and follow action, confirm can carry out impedance matching under resonance frequency FM2.This is desirable positively generating aspect plasma.In addition, in beginning frequency setting processing (Fig. 5), the beginning frequency transmitting time of above-mentioned execution mode, set and process in (Fig. 6), frequency scanning time setting processing (Fig. 7), if be judged to be plasma igniting in electric power applies, at this, constantly stopping electric power applying, but also can be configured to: after being judged to be plasma igniting, also continue to apply electric power, confirmation can impedance matching.; also can be configured to: after being judged to be plasma igniting, also continue to apply electric power, if roughly reach resonance frequency, if reach the frequency FM1 that reflected wave power starts sharply to reduce; carry out thereafter frequency and follow action, confirm can carry out impedance matching under resonance frequency FM2.
In addition, in the above-described embodiment, in the situation that the frequency of the frequency ratio resonance point of antiresonance point is high, from than the high frequency F1 of the frequency of antiresonance point to the target frequency F2 lower than the frequency of resonance point, from high frequency to low frequency, carry out frequency scanning, but also can be configured to from than the low frequency F1 of the frequency of resonance point to the target frequency F2 higher than the frequency of antiresonance point, from low frequency to high frequency, carry out frequency scanning.In this case, at least till the frequency of antiresonance point has been carried out from low frequency to high frequency frequency scanning, to the frequency direction of resonance point, carrying out frequency scanning from high frequency to low frequency is being desirable improving aspect plasma formation efficiency.
In addition, in the situation that the frequency of the frequency ratio resonance point of antiresonance point is low, also can be configured to: from than the low beginning frequency F1 of the frequency of antiresonance point to the target frequency F2 higher than the frequency of resonance point, from low frequency to high frequency, carry out frequency scanning.
In addition, in the above-described embodiment, start frequency setting processing (Fig. 5), beginning frequency transmitting time setting processing (Fig. 6), frequency scanning time setting processing (Fig. 7), but in the situation that known the appropriate value that starts frequency, can omit and start frequency setting processing, in addition in the situation that known the appropriate value that starts frequency transmitting time, can omit and start frequency transmitting time setting processing, in addition in the situation that known the appropriate value of frequency scanning time, can omit the frequency scanning time and set and process.
In addition, at the beginning frequency setting of above-mentioned execution mode, process in (Fig. 5), form and can be also: at primary electric power, apply in processing, beginning frequency setting value is deducted to predetermined value (0.1MHz), but at primary electric power, apply in processing, carry out confirming operation under default value and process (Fig. 4), can carry out after plasma igniting having reaffirmed, after secondary electric power applies processing, beginning frequency setting value is deducted to predetermined value (0.1MHz).
Equally, form and can be also: at the primary electric power that starts frequency transmitting time setting processing (Fig. 6), apply in processing, the beginning frequency setting of final time carrying out after plasma igniting is processed (Fig. 5), can carry out after plasma igniting having reaffirmed, after secondary electric power applies processing, beginning frequency transmitting time set point is deducted to predetermined value (10ms).In this case, be configured to: in the time of cannot carrying out plasma igniting in primary electric power applies processing, beginning frequency setting value is added to predetermined value (0.1MHz), again start frequency transmitting time and set processing (Fig. 6).
Equally, form and can be also: the primary electric power of setting processing (Fig. 7) in the frequency scanning time applies in processing, the beginning frequency transmitting time of final time of carrying out after plasma igniting is set processing (Fig. 6), can carry out after plasma igniting having reaffirmed, after secondary electric power applies processing, frequency scanning time set point is deducted to predetermined value (10ms).In this case, be configured to: in the time of cannot carrying out plasma igniting in primary electric power applies processing, beginning frequency transmitting time set point is added to predetermined value (10ms), again carry out the frequency scanning time and set processing (Fig. 7).
In the specified particular of this specification, at least comprise following invention.That is,
The first invention is a kind of plasma generation supply unit, possesses: reference signal generating unit, and it generates the reference signal of predetermined frequency, power amplification portion, it carries out power amplification and generates high frequency power signal said reference signal, test section, it detects row wave power and reflected wave power that above-mentioned high frequency power signal comprises, control part, it changes the frequency of reference signal for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the plasma generating unit that generates plasma to being arranged on outside provides the high frequency power signal generating by above-mentioned power amplification portion, this plasma generates and is characterised in that with supply unit, above-mentioned control part is configured to and carries out following plasma generation action, when providing above-mentioned high frequency power signal to above-mentioned plasma generating unit, in the predetermined very first time, control and make the frequency of said reference signal be fixed as predetermined beginning frequency and above-mentioned reflected wave power becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, frequency from from above-mentioned beginning frequency to predetermined target frequency scanning said reference signal becomes below the second predetermined performance number above-mentioned reflected wave power, and being configured to and generating the parameter of moving for above-mentioned plasma is above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned the second time carries out plasma and generates setting parameter action, the action of above-mentioned plasma generation setting parameter is configured to carries out following beginning frequency setting action, by above-mentioned beginning frequency setting, be from predefined default value, to approach the value of above-mentioned target frequency, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, then, carry out following beginning frequency transmitting time and set action, by the frequency setting of said reference signal, be the renewal value of above-mentioned beginning frequency, above-mentioned the second time is set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out the following frequency scanning time and set action, by the frequency setting of said reference signal, be the renewal value of above-mentioned beginning frequency, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the second new time.
The second invention is the plasma generation supply unit of above-mentioned the first invention, this plasma generates and is characterised in that with supply unit, at above-mentioned plasma, generate in setting parameter action, if more than in the execution of above-mentioned plasma generation action, above line wave power becomes than the large predetermined value of above-mentioned reflected wave power, be judged as and carried out plasma igniting, thereby finish above-mentioned executory plasma, generate action.
The 3rd invention is the plasma generation supply unit of above-mentioned the first invention or the second invention, this plasma generates and is characterised in that with supply unit, at above-mentioned plasma, generate in the above-mentioned very first time of action, if above-mentioned reflected wave power reaches above-mentioned the first performance number, former state maintains the power magnification in above-mentioned power amplification portion.
The 4th invention is the plasma generation supply unit of above-mentioned first invention the～the three invention, this plasma generates and is characterised in that with supply unit, the first predetermined performance number of above-mentioned reflected wave power is the maximum reflection wave power that can allow, and the second predetermined performance number of above-mentioned reflected wave power is minimal reflection wave power.
The 5th invention is a kind of plasma generation supply unit, possesses: reference signal generating unit, and it generates the reference signal of predetermined frequency, power amplification portion, it carries out power amplification and generates high frequency power signal said reference signal, test section, it detects row wave power and reflected wave power that above-mentioned high frequency power signal comprises, control part, it changes the frequency of reference signal for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the plasma generating unit that generates plasma to being arranged on outside provides the high frequency power signal generating by above-mentioned power amplification portion, this plasma generates and is characterised in that with supply unit, above-mentioned control part is configured to and carries out following plasma generation action, when providing above-mentioned high frequency power signal to above-mentioned plasma generating unit, in the predetermined very first time, control and make the frequency of said reference signal be fixed as predetermined beginning frequency and above-mentioned reflected wave power becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, frequency from from above-mentioned beginning frequency to predetermined target frequency scanning said reference signal becomes below the second predetermined performance number above-mentioned reflected wave power, and being configured to and generating the parameter of moving for above-mentioned plasma is the above-mentioned very first time, above-mentioned the second time carries out plasma and generates setting parameter action, the action of above-mentioned plasma generation setting parameter is configured to carries out following beginning frequency transmitting time setting action, above-mentioned the second time is being set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out the following frequency scanning time and set action, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the second new time.
The 6th invention is a kind of plasma generation supply unit, possesses: reference signal generating unit, and it generates the reference signal of predetermined frequency, power amplification portion, it carries out power amplification and generates high frequency power signal said reference signal, test section, it detects row wave power and reflected wave power that above-mentioned high frequency power signal comprises, control part, it changes the frequency of reference signal for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein, the plasma generating unit that generates plasma to being arranged on outside provides the high frequency power signal generating by above-mentioned power amplification portion, this plasma generates and is characterised in that with supply unit, above-mentioned control part is configured to and carries out following plasma generation action, when providing above-mentioned high frequency power signal to above-mentioned plasma generating unit, in the predetermined very first time, control and make the frequency of said reference signal be fixed as predetermined beginning frequency and above-mentioned reflected wave power becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, frequency from from above-mentioned beginning frequency to predetermined target frequency scanning said reference signal becomes below the second predetermined performance number above-mentioned reflected wave power, and being configured to and generating the parameter of moving for above-mentioned plasma is above-mentioned beginning frequency, or the above-mentioned very first time, or above-mentioned the second time carry out plasma and generate setting parameter action, above-mentioned plasma generates setting parameter action and is configured to any one the plasma parameter that carries out following action and sets action, carry out following beginning frequency setting action, by above-mentioned beginning frequency setting, be from predefined default value, to approach the value of above-mentioned target frequency, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, or, carry out following beginning frequency transmitting time and set action, above-mentioned beginning frequency and above-mentioned the second time are being set as to predefined default value, and the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the new very first time, or, carry out the following frequency scanning time and set action, above-mentioned beginning frequency and the above-mentioned very first time are being set as to default value, and above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the second new time.
The 7th invention is a kind of plasma generation supply unit, possesses: reference signal generating unit, and it generates the reference signal of predetermined frequency; Power amplification portion, it carries out power amplification and generates high frequency power signal said reference signal; Test section, it detects row wave power and reflected wave power that above-mentioned high frequency power signal comprises; Control part, it changes the frequency of reference signal for said reference signal generating unit, for above-mentioned power amplification portion, power amplification incidence is changed; Plasma generating unit, it generates plasma by the high frequency power signal being generated by above-mentioned power amplification portion, and this plasma generates and is characterised in that with supply unit,
Above-mentioned control part is configured to and carries out following plasma generation action, when providing above-mentioned high frequency power signal to above-mentioned plasma generating unit, in the predetermined very first time, control and make the frequency of said reference signal be fixed as predetermined beginning frequency and above-mentioned reflected wave power becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, frequency from from above-mentioned beginning frequency to predetermined target frequency scanning said reference signal becomes below the second predetermined performance number above-mentioned reflected wave power, and being configured to and generating the parameter of moving for above-mentioned plasma is above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned the second time carries out plasma and generates setting parameter action,
The action of above-mentioned plasma generation setting parameter is configured to carries out following beginning frequency setting action, by above-mentioned beginning frequency setting, be from predefined default value, to approach the value of above-mentioned target frequency, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, then, carry out following beginning frequency transmitting time and set action, by the frequency setting of said reference signal, be the renewal value of above-mentioned beginning frequency, above-mentioned the second time is set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out the following frequency scanning time and set action, by the frequency setting of said reference signal, be the renewal value of above-mentioned beginning frequency, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the second new time.
The 8th invention is that a kind of being set in carried out the establishing method that following plasma generates the parameter of using in the plasma generating method of action, this plasma generates action when the plasma generating unit to generating plasma provides high frequency power signal, in the predetermined very first time, make the frequency of above-mentioned high frequency power signal be fixed as predetermined beginning frequency and reflected wave power that above-mentioned high frequency power signal comprises becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, the frequency that scans above-mentioned high frequency power signal from above-mentioned beginning frequency to predetermined target frequency becomes below the second predetermined performance number above-mentioned reflected wave power, wherein, above-mentioned parameter is above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned the second time, this plasma generates parameter setting method and is characterised in that, possess: by above-mentioned beginning frequency setting, be from predefined default value, to approach the value of above-mentioned target frequency, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as the beginning frequency setting step of NEW BEGINNING frequency, it by the frequency setting of said reference signal, is being the renewal value of above-mentioned beginning frequency, above-mentioned the second time is set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the beginning frequency transmitting time of the new very first time and set step, it by the frequency setting of said reference signal, is being the renewal value of above-mentioned beginning frequency, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the frequency scanning time of the second new time and set step.
The explanation of symbol
10: plasma processing unit; 11: pedestal; 13: lifter pin; 14: wafer support sector; 20: wafer; 21: supply pipe; 22: valve; 23:MFC; 24: gas supply source; 30: the plasma span; 31: reaction vessel; 32: resonance coil; 33: gas introduction port; 40: plasma generation supply unit; 41: frequency synthesizer circuit (reference signal generating unit); 42: power amplification portion; 43: test section; 45: process space; 48: substrate; 52: outside shielding; 54: top board; 55: gas supply pipe; 60: baffle plate; 61: pillar; 62: movable screw tap; 63: movable screw tap; 64: dead earth; 65: exhaustion plate; 67: guide shaft; 68: process chamber sidewalls; 69: base plate; 71: elevation base plate; 73: lifting shaft; 74: first row air chamber; 75: exhaust intercommunicating pore; 76: second row air chamber; 80: blast pipe; 81:APC; 82: vacuum pump; 90: control part; 91: operating portion; 92: display part; 93: storage part.

Claims (4)

1. a plasma generation supply unit, possesses:
Reference signal generating unit, it generates the reference signal of predetermined frequency;
Power amplification portion, it carries out power amplification and generates high frequency power signal said reference signal;
Test section, it detects row wave power and reflected wave power that above-mentioned high frequency power signal comprises;
Control part, it changes the frequency of reference signal for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein
The plasma generating unit that generates plasma to being arranged on outside provides the high frequency power signal generating by above-mentioned power amplification portion, and this plasma generates and is characterised in that with supply unit,
Above-mentioned control part is configured to and carries out following plasma generation action, when providing above-mentioned high frequency power signal to above-mentioned plasma generating unit, in the predetermined very first time, control and make the frequency of said reference signal be fixed as predetermined beginning frequency and above-mentioned reflected wave power becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, frequency from from above-mentioned beginning frequency to predetermined target frequency scanning said reference signal becomes below the second predetermined performance number above-mentioned reflected wave power
And be configured to the parameter that generates action for above-mentioned plasma and be above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned the second time and carry out plasma and generate setting parameter action,
The action of above-mentioned plasma generation setting parameter is configured to carries out following beginning frequency setting action, by above-mentioned beginning frequency setting, be from predefined default value, to approach the value of above-mentioned target frequency, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as NEW BEGINNING frequency, then, carry out following beginning frequency transmitting time and set action, by the frequency setting of said reference signal, be the renewal value of above-mentioned beginning frequency, above-mentioned the second time is set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out the following frequency scanning time and set action, by the frequency setting of said reference signal, be the renewal value of above-mentioned beginning frequency, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the second new time.
2. plasma generation supply unit according to claim 1, is characterized in that,
At above-mentioned plasma, generate in setting parameter action, if more than in the execution of above-mentioned plasma generation action, above line wave power becomes than the large predetermined value of above-mentioned reflected wave power, be judged as and carried out plasma igniting, thereby finish above-mentioned executory plasma, generate action.
3. a plasma generation supply unit, possesses:
Reference signal generating unit, it generates the reference signal of predetermined frequency;
Power amplification portion, it carries out power amplification and generates high frequency power signal said reference signal;
Test section, it detects row wave power and reflected wave power that above-mentioned high frequency power signal comprises;
Control part, it changes the frequency of reference signal for said reference signal generating unit, for above-mentioned power amplification portion, power magnification is changed, wherein
The plasma generating unit that generates plasma to being arranged on outside provides the high frequency power signal generating by above-mentioned power amplification portion, and this plasma generates and is characterised in that with supply unit,
Above-mentioned control part is configured to and carries out following plasma generation action, when providing above-mentioned high frequency power signal to above-mentioned plasma generating unit, in the predetermined very first time, control and make the frequency of said reference signal be fixed as predetermined beginning frequency and above-mentioned reflected wave power becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, frequency from from above-mentioned beginning frequency to predetermined target frequency scanning said reference signal becomes below the second predetermined performance number above-mentioned reflected wave power
And being configured to and generating the parameter of moving for above-mentioned plasma is the above-mentioned very first time, above-mentioned the second time carries out plasma and generates setting parameter action, the action of above-mentioned plasma generation setting parameter is configured to carries out following beginning frequency transmitting time setting action, above-mentioned the second time is being set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the new very first time, then, carry out the following frequency scanning time and set action, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the second new time.
4. a plasma generates parameter setting method, to be set in to carry out the establishing method that following plasma generates the parameter of using in the plasma generating method of action, this plasma generates action when the plasma generating unit to generating plasma provides high frequency power signal, in the predetermined very first time, make the frequency of above-mentioned high frequency power signal be fixed as predetermined beginning frequency and reflected wave power that above-mentioned high frequency power signal comprises becomes below the first predetermined performance number, through the second predetermined time after the above-mentioned very first time, the frequency that scans above-mentioned high frequency power signal from above-mentioned beginning frequency to predetermined target frequency becomes below the second predetermined performance number above-mentioned reflected wave power, wherein, above-mentioned parameter is above-mentioned beginning frequency, the above-mentioned very first time, above-mentioned the second time, this plasma generates parameter setting method and is characterised in that, possess:
By above-mentioned beginning frequency setting, be from predefined default value, to approach the value of above-mentioned target frequency, and the above-mentioned very first time and above-mentioned the second time are set as under the state of predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned beginning frequency that can generate plasma and be set as the beginning frequency setting step of NEW BEGINNING frequency;
It by the frequency setting of said reference signal, is being the renewal value of above-mentioned beginning frequency, above-mentioned the second time is set as to predefined default value, the above-mentioned very first time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of the above-mentioned very first time that can generate plasma and be set as the beginning frequency transmitting time of the new very first time and set step;
It by the frequency setting of said reference signal, is being the renewal value of above-mentioned beginning frequency, be set as to the renewal value of the above-mentioned very first time the above-mentioned very first time, above-mentioned the second time is set as the state of the value that shortened from predefined default value, carry out above-mentioned plasma and generate action, find out the renewal value of above-mentioned second time that can generate plasma and be set as the frequency scanning time of the second new time and set step.
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