TWI591368B - Radiation detector and manufacturing method thereof - Google Patents
Radiation detector and manufacturing method thereof Download PDFInfo
- Publication number
- TWI591368B TWI591368B TW103119813A TW103119813A TWI591368B TW I591368 B TWI591368 B TW I591368B TW 103119813 A TW103119813 A TW 103119813A TW 103119813 A TW103119813 A TW 103119813A TW I591368 B TWI591368 B TW I591368B
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- array substrate
- moisture
- flange portion
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- radiation detector
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 26
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- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
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- 239000011888 foil Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000010538 cationic polymerization reaction Methods 0.000 claims description 3
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- 238000011156 evaluation Methods 0.000 description 14
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- 230000004048 modification Effects 0.000 description 14
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
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- 238000007789 sealing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
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- 238000003786 synthesis reaction Methods 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NZYNBTBHDHZVJJ-UHFFFAOYSA-N O=S.[Sr] Chemical compound O=S.[Sr] NZYNBTBHDHZVJJ-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- GFKJCVBFQRKZCJ-UHFFFAOYSA-N oxygen(2-);yttrium(3+);trisulfide Chemical compound [O-2].[O-2].[O-2].[S-2].[S-2].[S-2].[Y+3].[Y+3].[Y+3].[Y+3] GFKJCVBFQRKZCJ-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013119455A JP6114635B2 (ja) | 2013-06-06 | 2013-06-06 | 放射線検出器およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201506434A TW201506434A (zh) | 2015-02-16 |
| TWI591368B true TWI591368B (zh) | 2017-07-11 |
Family
ID=52135537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103119813A TWI591368B (zh) | 2013-06-06 | 2014-06-06 | Radiation detector and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6114635B2 (enrdf_load_stackoverflow) |
| CN (1) | CN104241199B (enrdf_load_stackoverflow) |
| TW (1) | TWI591368B (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016128779A (ja) * | 2015-01-09 | 2016-07-14 | 株式会社東芝 | 放射線検出器及びその製造方法 |
| JP6749038B2 (ja) * | 2016-04-07 | 2020-09-02 | キヤノン電子管デバイス株式会社 | 放射線検出器、及びその製造方法 |
| JP2017192090A (ja) * | 2016-04-15 | 2017-10-19 | 東芝電子管デバイス株式会社 | 放射線検出器 |
| JP2017203672A (ja) * | 2016-05-11 | 2017-11-16 | 東芝電子管デバイス株式会社 | 放射線検出器 |
| JP6818617B2 (ja) * | 2017-04-03 | 2021-01-20 | キヤノン電子管デバイス株式会社 | 放射線検出器、放射線検出器の製造装置、および放射線検出器の製造方法 |
| CN111801599B (zh) * | 2018-02-28 | 2023-06-06 | 富士胶片株式会社 | 放射线检测器、放射线图像摄影装置及放射线检测器的制造方法 |
| WO2019244610A1 (ja) * | 2018-06-22 | 2019-12-26 | 富士フイルム株式会社 | 放射線検出器及び放射線画像撮影装置 |
| JP7240998B2 (ja) * | 2018-11-13 | 2023-03-16 | キヤノン電子管デバイス株式会社 | 放射線検出モジュール、放射線検出器、及び放射線検出モジュールの製造方法 |
| CN110849918B (zh) * | 2019-10-31 | 2021-11-09 | 北京时代民芯科技有限公司 | 一种倒装焊器件焊点缺陷无损检测方法和系统 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2260041C (en) * | 1997-02-14 | 2001-10-09 | Hamamatsu Photonics K.K. | Radiation detection device and method of producing the same |
| JP3405706B2 (ja) * | 1997-02-14 | 2003-05-12 | 浜松ホトニクス株式会社 | 放射線検出素子 |
| JP2002181949A (ja) * | 2000-12-08 | 2002-06-26 | Canon Inc | 放射線検出装置及びそれを用いた放射線撮像システム |
| JP4612876B2 (ja) * | 2004-08-10 | 2011-01-12 | キヤノン株式会社 | 放射線検出装置、シンチレータパネル、これらの製造方法及び放射線検出システム |
| JP2006058171A (ja) * | 2004-08-20 | 2006-03-02 | Fuji Photo Film Co Ltd | マンモグラフィ用放射線画像変換パネルおよびその製造方法 |
| JP4819344B2 (ja) * | 2004-11-24 | 2011-11-24 | キヤノン株式会社 | 半導体装置、放射線撮像装置、及びその製造方法 |
| JP4764407B2 (ja) * | 2007-11-20 | 2011-09-07 | 東芝電子管デバイス株式会社 | 放射線検出器及びその製造方法 |
| CN101900824B (zh) * | 2010-06-24 | 2012-05-09 | 江苏康众数字医疗设备有限公司 | 闪烁体封装薄膜及封装方法 |
| JP2012052965A (ja) * | 2010-09-02 | 2012-03-15 | Toshiba Corp | 放射線検出器及びその製造方法 |
| JP2012088152A (ja) * | 2010-10-19 | 2012-05-10 | Toshiba Electron Tubes & Devices Co Ltd | 放射線検出装置 |
| JP5728250B2 (ja) * | 2011-03-01 | 2015-06-03 | キヤノン株式会社 | 放射線検出装置、シンチレータパネル、それらの製造方法、および放射線検出システム |
| JP5905672B2 (ja) * | 2011-06-28 | 2016-04-20 | 株式会社東芝 | 放射線検出器及びその製造方法 |
| JP2013038346A (ja) * | 2011-08-10 | 2013-02-21 | Olympus Corp | 光学装置 |
-
2013
- 2013-06-06 JP JP2013119455A patent/JP6114635B2/ja active Active
-
2014
- 2014-06-06 CN CN201410250430.9A patent/CN104241199B/zh active Active
- 2014-06-06 TW TW103119813A patent/TWI591368B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104241199B (zh) | 2017-09-12 |
| JP2014238271A (ja) | 2014-12-18 |
| CN104241199A (zh) | 2014-12-24 |
| TW201506434A (zh) | 2015-02-16 |
| JP6114635B2 (ja) | 2017-04-12 |
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