TWI587408B - Semiconductor device manufacturing method - Google Patents

Description

Semiconductor device manufacturing method [Related application]

This application claims priority from Japanese Patent Application No. 2014-187679 (filing date: September 16, 2014) as a basic application. This application contains the entire contents of the basic application by reference to the basic application.

Embodiments of the present invention relate to a method of fabricating a semiconductor device.

In the manufacturing step of the semiconductor device, in the step of performing resin sealing, a resin is provided in a mold of the compression molding device, and the resin is covered with a resin in a state in which a plurality of semiconductor elements are mounted on the mounting substrate. Semiconductor component. After the resin is molded, the integrally formed resin and the mounting substrate are cut in units of each of the semiconductor elements.

In this case, as a method of providing a resin to a mold of a compression molding apparatus, there is a method in which a pellet resin or the like is preformed into a shape slightly smaller than a shape in which a resin is molded, and is placed in a cavity of a mold. Further, as another method, there is a method in which a specific amount of the particulate resin is dispersed on the tray in a range slightly smaller than the cavity size of the mold, and the mold is transferred to the cavity of the mold.

Specifically, for example, a mounting substrate in which semiconductor elements before resin sealing are arranged in a matrix shape is adsorbed and held in the upper mold with the semiconductor element facing downward. Next, the sealing resin material disposed by the above method is placed in a cavity surrounded by the lower frame mold and the lower bottom mold. After that, the lower mold is raised as a whole, and the area surrounded by the upper mold and the lower mold is reduced. Pressure. Thereby, the air in the sealing resin material is defoamed. The sealing resin material is melted and foamed by heat and pressure reduction of the mold to expand in the cavity.

Then, after the lower frame mold is raised until it contacts the mounting substrate provided on the upper mold to completely form the cavity, the lower bottom mold is raised to squeeze the foamed resin into the cavity while the foamed resin is squeezed. After the entire area is unfolded, after the resin is hardened at a specific pressure for a specific period of time, the lower mold is lowered and the molded article is taken out.

In the above step, the sealing resin material provided in the lower mold has a rectangular shape smaller than the mold. In this case, the size of the resin material to be placed is preferably set such that it does not excessively foam at the decompression position, and leaks from the upper and lower dies to the outside of the cavity, or expands less, resulting in a deflection of the outer peripheral portion. Move just like the size. Further, in the case where the wire exceeds the allowable amount, there is a case where an excessive force is applied to the wire to cause the wire to be broken or to be short-circuited in contact with the semiconductor element.

However, it is actually difficult to set the size of the resin material placed by the exact size. In particular, if the sealing resin material leaks from the cavity to the outside during molding, production cannot be performed, and therefore, it is preferably carried out without causing leakage of the resin. As a result, in order to prevent the wire Sweep of the outer peripheral portion from occurring during sealing, measures such as increasing the wire diameter or disposing the semiconductor element in the portion where the wire is offset are taken.

The present embodiment provides a method of manufacturing a semiconductor device in which a resin is provided so as to be uniformly expanded in a mold after being melted and expanded in a resin when the resin is sealed by a compression molding device.

A method of manufacturing a semiconductor device according to the present embodiment includes the steps of: mounting a mounting substrate on an upper mold, the mounting substrate including a wire bonding semiconductor element; and disposing the preformed resin in a lower mold; Forming a cavity between the mold and the lower mold, and heating the pre-formed resin; and molding the upper mold against the pre-formed resin; and the pre-formed resin: pre-forming The corner portion of the resin is at a distance LA from the end portion of the cavity, and the edge portion of the pre-formed resin is the farthest central portion with respect to the shape line outside the cavity. The distance is LB, and the distance LB is formed to be larger than the distance LA.

1‧‧‧Semiconductor components

2‧‧‧Installation substrate

3‧‧‧bonding line

4‧‧‧Resin

5‧‧‧Preformed resin

5a‧‧‧Resin

5b‧‧‧ bubbles

5c‧‧‧Resin

6‧‧‧Preformed resin

6a‧‧‧ outline

6b‧‧‧ outline

7‧‧‧Tray

7a‧‧‧ outline

7A‧‧‧Tray cover

7b‧‧‧ outline

8‧‧‧Tray

8A‧‧‧Tray cover

10‧‧‧Upper mold

11‧‧‧ Lower mold

11a‧‧‧ bottom mold

11b‧‧‧Bottom mode

A1‧‧‧ cut line

A2‧‧‧ cut line

C1‧‧‧ X-direction outside the cavity

C2‧‧‧ outside the Y-direction of the cavity

D‧‧‧ spacing

D1‧‧‧ spacing

D2‧‧‧ spacing

K‧‧‧ cavity

LA1‧‧‧ distance

LA2‧‧‧ distance

LB1‧‧‧ distance

LB2‧‧‧ distance

M1‧‧‧ scattered pattern

M2‧‧‧ scattered pattern

M3‧‧‧ scattered pattern

M4‧‧‧ scattered pattern

M5‧‧‧ scattered pattern

M6‧‧‧ scattered pattern

Ma‧‧‧Distribution starting point (distribution starting point)

Mb‧‧ corner

Mc‧‧‧ points

Md‧‧ points

Me‧‧‧ points

Me1‧‧‧ points

Me2‧‧‧ points

Mf‧‧ points

Mf1‧‧ points

Mf2‧‧ points

Mg‧‧‧ points

Mh‧‧ points

Mi‧‧‧

Mj‧‧ points

Mk‧‧‧ end point

MM‧‧‧increased area of dispersion

P1‧‧‧ corner

P2‧‧‧ corner

Q1‧‧‧Central Department

Q2‧‧‧Central Department

S1‧‧‧ regional pattern

S1~S5‧‧‧Steps

X‧‧‧ direction

Y‧‧‧ direction

Fig. 1 is a flow chart showing the manufacturing steps of the first embodiment.

2 to 4 are schematic plan views showing the manufacturing steps of the semiconductor device.

Fig. 5 (a), Fig. 6 (a), and Fig. 7 (a) are schematic plan views of a semiconductor device and a sealing resin in a molding step.

Fig. 5 (b), Fig. 6 (b), and Fig. 7 (b) are schematic cross-sectional views showing the state of the mold in the molding step.

Fig. 8 is a plan view of a sealing resin having different shapes.

Fig. 9 is a plan view showing a scattering pattern of the particulate resin of the second embodiment.

Fig. 10 is a plan view showing a scattering pattern of the particulate resin of the third embodiment.

Fig. 11 is a plan view showing a scattering pattern of the particulate resin of the fourth embodiment.

Fig. 12 is a plan view showing a scattering pattern of the particulate resin of the fifth embodiment.

Fig. 13 (a) to (c) are plan views showing the scattering pattern of the particulate resin of the sixth embodiment.

Hereinafter, a plurality of embodiments will be described with reference to the drawings. Further, the pattern is model, and the relationship between the thickness and the plane size, the ratio of the thickness of each layer, and the like are not necessarily the same as those of the actual ones. Further, the directions of the up, down, left, and right directions indicate the direction in which the circuit formation surface side of the semiconductor substrate described below is placed above or below, and does not necessarily coincide with the direction based on the direction of the gravitational acceleration.

(First embodiment)

1 to 8 show a first embodiment. In this embodiment, an example will be described in which a plurality of semiconductor elements 1 are attached to the mounting substrate 2 and sealed with a resin. In the case of the plurality of semiconductor elements 1, the resin before molding is preformed and used.

First, the flow of the overall schematic steps will be described with reference to Figs. 1 and 2 to 4 . Fig. 1 shows the flow of the steps, and Figs. 2 to 4 show the state in the step in a schematic plan view.

As shown in FIG. 1, first, the semiconductor element 1 is mounted on a mounting substrate (S1). Specifically, as shown in FIG. 2, the semiconductor element 1 which is cut into a rectangular shape by various processing steps on a semiconductor substrate by an adhesive or the like is attached to the mounting substrate 2. Here, in the mounting substrate 2, the semiconductor element 1 is placed in a state in which, for example, three are arranged in the vertical direction and eight are arranged in the horizontal direction. A bonding pad is formed around the mounting substrate 2 in correspondence with a position at which the semiconductor element 1 is packaged.

Next, a wire bonding step (S2) of connecting the bonding wires 3 to the respective semiconductor elements 1 is performed. Between the bonding pads on the four sides of each of the semiconductor elements 1 and the bonding pads on the side of the mounting substrate 2, as shown in FIG. 2, a bonding wire 3 of, for example, an Au wire is connected by a bonding device. The bonding pads of the mounting substrate 2 are formed on the back side of the mounting substrate 2 via via holes to form vias, and are connected to the metal pads formed on the back side.

Next, a molding processing step (S3) of forming the resin 4 so as to cover the entirety of the plurality of semiconductor elements 1 mounted on the substrate 2 is performed. In this case, in the molding processing step, as shown in FIG. 3, the resin 4 is formed by compression molding so as to cover the entirety of the plurality of semiconductor elements 1 mounted on the substrate 2. Further, the details of the molding processing step will be described below.

Thereafter, the solder ball forming step (S4) is performed to form a metal solder ball such as solder on the lead terminal portion where the mounting substrate 2 is exposed. Furthermore, the solder ball forming step S4 can be omitted. That is, for example, when a metal solder ball is formed on a lead terminal on the side of a packaged semiconductor device, a metal solder ball may not be formed on the side of the semiconductor device.

Then, a cutting step (S5) in which the semiconductor element 1 of the mounting substrate 2 is individually cut away is carried out, including the portion including the formed resin 4. Here, as shown in Figure 4, The semiconductor element 1 of the mounting substrate 2 is cut away from the resin 4 along the cutting line A1 and the cutting line A2. The cutting lines A1 and A2 are cut by each of the cutting line A1 in the X direction and the cutting line A2 in the Y direction in units of the semiconductor element 1 and the bonding wire 3 as shown in the figure. And cut into individual semiconductor devices.

Next, the above-described molding processing step S3 will be specifically described with reference to FIGS. 5 to 7. In this embodiment, the preformed resin 5 is used as the resin used in the molding processing step. The preformed resin 5 is formed in advance into a specific shape depending on the size of the mounting substrate 2, the size of the semiconductor element 1, or the wire diameter or arrangement position of the bonding wires 3. In this case, the preformed resin 5 is formed into a specific shape by forming a fine particle resin such as a powder.

The shape of the preformed resin 5 is formed to be slightly smaller than the shape of the mounting substrate 2. However, in this embodiment, as shown in Fig. 5(a), the corner portion protrudes and the edge portion retreats. The shape. Specifically, the X-direction outer line C1 and the Y-direction outer shape line C2 corresponding to the shape of the formed resin 4 indicate the outer position of the cavity K of the molding processing apparatus described below. That is, the resin 4 is formed in a portion divided by the outline lines C1 and C2.

The preformed resin 5 is formed in the side portion in the X direction, and the distance from the corner portion P1 of the approaching point to the line C1 in the X direction of the opposing cavity K is LA1, and the distance from the central portion Q1 of the farthest point is obtained. It is LB1 (>LA1), and is formed into a shape in which the side portion is recessed in the center. Further, in the same manner, the preformed resin 5 is in the side portion in the Y direction, and the distance from the corner line P2 near the point is LA2 with respect to the line C2 in the Y direction of the opposing cavity, and becomes the center of the farthest point. The distance of the portion Q2 is LB2 (>LA2), and is similarly formed into a shape in which the side portion is recessed in the center.

Furthermore, in the present specification, the "corner portion" also includes a so-called rounded corner having a curvature at the top.

Next, the specific contents of the molding processing steps will be described. First, as shown in FIGS. 5(a) and 5(b), a plurality of semiconductor elements 1 are placed next to each other and arranged in a matrix-like mounting substrate 2 so that the next side of the semiconductor element 1 is adsorbed and held thereon. Mold 10. its Then, the preformed resin 5 for molding and sealing which is previously formed by the above method is placed in the cavity K surrounded by the lower mold 11 and the lower mold 11a. Fig. 5(a) shows the arrangement relationship between the preformed resin 5 and the mounting substrate 2, and Fig. 5(b) shows a state in which the preformed resin 5 is placed on the lower mold 11. In FIG. 5(b), the mounting substrate 2 is shown as being cut along the line 5B-5B of the semiconductor element 1 in the Y direction of FIG. 5(a). Hereinafter, in FIGS. 6(b) and 7(b), the portion cut by the same cutting line is also shown.

Next, as shown in FIGS. 6(a) and 6(b), the lower mold 11 is entirely raised, and the inside of the cavity K surrounded by the upper mold 10 and the lower mold 11 is decompressed by a pressure reducing mechanism. At this time, the cavity K is heated by the heating means, and the pre-formed resin 5 is a resin 5a which is heated while being decompressed, and expands while being deformed, and the air contained therein expands, whereby the preformed resin 5 is contained. The state of the bubble 5b.

The pressure reduction is performed by a vent hole formed in the lower mold 11 and communicating with the outside from the cavity K, and is performed by a pressure reducing mechanism such as an exhaust pump, whereby the air bubbles 5b are discharged to the outside, thereby pre-forming the resin 5 The bubble 5b is gradually discharged. In this state, the resin 5a spreads in the cavity K, so that the distance from the gap of the side wall surface of the cavity K gradually decreases. Thereby, the deformed resin 5a is further deformed so as to cover the state in which the semiconductor element 1 and the bonding wires 3 which are next to the mounting substrate 2 are provided.

Then, as shown in FIGS. 7(a) and 7(b), the lower frame mold 11b is raised until it comes into contact with the mounting substrate 2 provided on the upper mold 10, and the cavity K is completely closed. When 11a rises, the resin material for sealing is spread over the entire cavity of the foamed resin 5a. Thereby, the shape of the resin 5c shown in FIG. 7(a) is further developed in the cavity K so that the gap is reduced. At this time, as described above, in the state of the resin 5a, the semiconductor element 1 and the bonding wire 3 covering the mounting substrate 2 are sized. Therefore, when the lower mold 11a is raised, the bonding wire 3 is prevented from flowing due to the resin 5c. Wash out the state above the allowable amount.

Thereby, the resin 5c is filled to the position along the outer lines C1 and C2 in the cavity K. state. In this state, when the lower mold 11 is lowered after the resin 5c is cured at a specific pressure for a specific period of time, the resin 4 is formed on the mounting substrate 2 in a hardened state. When the adsorption state of the upper mold 10 is released, the mounting substrate 2 having the resin 4 formed by the molding process can be taken out.

As the pre-formed resin 5 in the case where the molding process is carried out as described above, it is preferable to consider the distances LA1, LB1 defined by the shape line C1 other than the cavity K as described below, and the distance LA2 defined for the outline C2. Set the shape of the shape with LB2. The distance is set to a distance that is in contact with the outlines C1 and C2 in the cavity K when the preformed resin 5 expands due to heating. Moreover, in this state, the pre-formed resin 5 is set so as to completely cover the portion of the semiconductor element 1 where the bonding wires 3 are provided, and does not overflow from the cavity K.

When the preformed resin 5 is formed in this manner, when the preformed resin 5 is heated and flows in the molding process, the bonding wire 3 connected to the semiconductor element 1 is not shifted by a tolerance or more. Further, the preformed resin 5 can be flowed so as to be surely filled into the cavity in the cavity K, and can be molded in a state where the resin does not overflow to the outside of the cavity K. For example, in the case where the preformed resin is formed into a short shape, there is a case where the vicinity of the center of each side expands and expands in a manner close to an elliptical shape, and the resin material leaks to the outside from the central portion of each side. Further, in the case where the resin material is not leaked to the outside from the central portion of each side, there is a case where the corners in the cavity K cannot be filled.

Fig. 8 shows a preform resin 6 in place of the above-mentioned preformed resin 5. The preformed resin 6 also satisfies the same conditions as the above-mentioned preformed resin 5, but the shape of the side portions is different. That is, in the preformed resin 6, the outer shape lines 6a, 6b have a shape of a straight line corresponding to each of the shape lines C1, C2 outside the cavity K.

In other words, in the outer shape pattern of the preformed resin 5, the central portion of the outer shape is formed so that the distances LA1 and LA2 are the longest distances LB1 and LB2 with respect to the corner portions. On the other hand, in the outer shape pattern of the preformed resin 6, the shape is such that the distances LA1, LA2 with respect to the corners of the outer shape are closer to the center, and the distance is slightly impatient immediately. The length is shortened to LB1 and LB2, and the portion to be the concave portion is formed in a straight line shape.

By using such a preformed resin 6, substantially the same effects as those in the case of using the above-mentioned preformed resin 5 can be obtained.

(Second embodiment)

Fig. 9 shows a second embodiment. Hereinafter, a portion different from the first embodiment will be described. In this embodiment, unlike the case of the first embodiment, the resin for molding is supplied by dispersing the particulate resin in a specific shape in the cavity K instead of using the preform resin.

In other words, the particulate resin placed in the cavity K is a dispersion pattern which is disposed in a specific shape by dropping a powdery resin from a nozzle. Regarding the dropwise addition of the particulate resin from the nozzle, the particulate resin is temporarily spread on the tray 7 and transferred to the cavity K, thereby being configured into a specific shape.

A tray 7 for dispersing the particulate resin is shown in FIG. The tray 7 has a rectangular tray cover 7A which is a frame portion, and the inner side of the opening is a linear outer shape line 7a, 7b corresponding to the outer contour lines C1, C2 of the cavity K. The dispersed granular resin is disposed in a distribution pattern M1 similar to the area pattern S1, and the area pattern S1 corresponds to the shape of the preformed resins 5 and 6 shown in the first embodiment. Since the granular resin is dropped from the nozzle at a fixed speed, the nozzle or the tray 7 is relatively moved, and the scattering pattern M1 can be formed by using the scattering trajectory.

In the scatter pattern M1 shown in FIG. 9, the nozzle is caused to start from the distribution start point Ma at the lower right in the drawing, and when moving in the Y direction to reach the corner portion Mb, the movement direction is changed to the X direction, and only the specific movement is moved. When the distance d reaches the point Mc, it moves again in the Y direction and folds back. When the position of the nozzle reaches the specific position Md to the lower side, it moves in the Y direction again after moving only a certain pitch d in the X direction. Hereinafter, a zigzag pattern as shown in the drawing can be formed by repeating the above-described moving pattern until reaching the final point Me. Further, in this embodiment, when the nozzle is located at the corner of the outer shape of the whole body, the nozzle is made The movement is stopped for a certain time or the moving speed is lowered, thereby forming an MM area in which the amount of dispersion is increased.

Thereby, the MM region in which the amount of dispersion of the particulate resin is large is arranged as a whole. As a result, the amount of the particulate resin located at the corner portion can be plastically deformed by melting in the molding process step when the resin is heated, thereby forming the same pattern as the preformed resin 5 or 6. The area pattern S1 of the resin distribution state. Therefore, in the molding processing step, defects such as a tolerance of the bonding wire 3 or more are not generated, and the resin can be surely filled into the cavity K.

Further, in the dispersion of the granular resin which is dropped from the nozzle, the amount of dispersion is changed by changing the moving speed of the nozzle, but when the amount of the drop from the nozzle itself can be changed, the moving speed can be changed without borrowing The same scatter pattern is formed by varying the amount of granule resin applied from the nozzle.

(Third embodiment)

Fig. 10 shows a third embodiment. Hereinafter, a portion different from the second embodiment will be described. In this embodiment, the scattering pattern M2 is formed as follows, that is, the amount of dropping of the pellet resin from the nozzle is a fixed speed, and the moving speed of the nozzle is also a fixed speed, but the moving path is different. The scattering pattern M2 is a zigzag-like dispersion of the particle resin in a shape along the shape of the area pattern S1, and the area pattern S1 is in the same pattern as the pattern of the preformed resin 5 or 6.

That is, a tray 7 in which the particulate resin is dispersed is shown in Fig. 10 . The dispersed granular resin has the scattering pattern M2 disposed so as to correspond to the shape of the area pattern S1 shown in the second embodiment. The pellet resin is dropped from the nozzle at a fixed speed, and the nozzle or the tray 7 is relatively moved, thereby forming the scattering pattern M2.

In the scatter pattern M2 shown in FIG. 10, the nozzle is moved from the start point Ma at the lower right in the drawing, and is moved in the Y direction so as to be slightly inclined toward the inner side (X direction) along the area pattern S1. When the Mb is at the center, and then the line along the area pattern S1 Moving in the Y direction slightly toward the outer side (X direction) reaches the corner portion Mc.

Then, the moving direction is changed to the X direction, and only the specific pitch is moved. However, at this time, the movement in the X direction is moved in the X direction so as to be inclined slightly inward (Y direction) along the line outside the area pattern S1. When the point Md, it moves again in the Y direction. On the inner side of the outermost peripheral portion, when moving in the Y direction, it is not inclined in the X direction, but is moved in a zigzag pattern at a specific pitch d. Further, when the position of the nozzle reaches the specific position Me of the lower side portion, it moves in the X direction so as to be inclined slightly inward (Y direction) along the line pattern S1, and reaches the point Me, and then moves again in the Y direction. .

Hereinafter, the above-described moving pattern is repeated, and when reaching the corner portion Mf of the outermost circumference, the Y-shaped line along the area pattern S1 is slightly inclined to the inner side (X direction) in the same manner as the movement of Ma to Mc. When the direction moves to reach the center portion of the Mg, it moves in the Y direction so as to be slightly inclined outward (X direction) along the line pattern S1, and reaches the corner portion Mh of the end point. The zigzag scatter pattern M2 is formed in the manner described above along the shape of the area pattern S1.

As a result, in the molding processing step, when the resin is heated, the resin distribution such as the pattern of the preformed resin 5 or 6 is formed by the particle resin dispersed in the track corresponding to the shape of the area pattern S1. The area pattern S1 of the state. Therefore, in the molding processing step, defects such as a tolerance of the bonding wire 3 or more are not generated, and the resin can be surely filled into the cavity K.

(Fourth embodiment)

Fig. 11 shows a fourth embodiment. In this embodiment, a tray 8 having a tray cover 8A having a shape along the area pattern S1 is used instead of the tray 7 on which the granular resin is dispersed. In other words, the tray 8 is formed in a frame shape that is opened so as to have a shape corresponding to the shape of the region pattern S1 corresponding to the shape of the preformed resins 5 and 6 without forming the scattering region defined by the tray cover 8A.

In this embodiment, the granular resin is dispersed in a zigzag pattern of the scattering pattern M3. cloth. This scatter pattern M3 is similar to the scatter pattern M1 in the second embodiment, but does not form an MM region in which the amount of scattering is increased. That is, in the scattering pattern M3, the nozzle is started from the distribution start point Ma at the lower right in the drawing, and when moving in the Y direction and reaches the corner portion Mb, the moving direction is changed to the X direction, and only the specific pitch d is moved to arrive. When it reaches the point Mc, it moves again in the Y direction and folds back. When the position of the nozzle reaches the specific position Md to the lower side, it moves in the Y direction again after moving only a certain pitch d in the X direction. Hereinafter, a zigzag pattern as shown in the drawing can be formed by repeating the above-described moving pattern until reaching the final point Me.

Thereby, in the molding processing step, when the resin is heated, and the particulate resin of the above-described scattering pattern M3 becomes a flowing state, it flows in the shape of the tray cover 8A, and as a result, it can be formed as with the preformed resin 5 or The area pattern S1 of the resin distribution state in which the pattern of 6 is the same. Therefore, in the molding processing step, defects such as a tolerance of the bonding wire 3 or more are not generated, and the resin can be surely filled into the cavity K.

Further, in this embodiment, the scatter pattern M3 of the granule resin is used, but the tray 8 and the tray cover 8A may be used to spread the scatter pattern M1 in the second embodiment, or in the third embodiment. The scatter pattern M2 is spread. In this case, the same effect can be obtained.

(Fifth Embodiment)

Fig. 12 shows a fifth embodiment. Hereinafter, parts different from the fourth embodiment will be described. In this embodiment, instead of the scattering pattern M3 of the particulate resin, the scattering pattern M4 is used.

That is, in this embodiment, the tray 8 having the tray cover 8A similar to that of the fourth embodiment is used, and the granular resin is dispersed in the scattering pattern M4. The opening shape of the tray cover 8A is the same as the shape of the area pattern S1 corresponding to the shape of the preformed resins 5 and 6.

In the scatter pattern M4 shown in FIG. 12, the scatter start point Ma is set at the center of the area on the left side in the drawing. The granule resin is started to be dropped from the scattering start point Ma, and then the nozzle is moved in a rectangular spiral shape toward the outer peripheral side so as to have a specific pitch d with the adjacent trajectory. The way to spread. In this case, the movement of the nozzle in the Y direction is generally moved in the Y direction, and the movement of the nozzle in the X direction is performed so as to move inward in the Y direction along the shape of the tray cover 8A, and the granular resin is dispersed. Thereafter, when the position of the nozzle reaches the portion Mb closest to the side of the tray cover 8A, it moves in the Y direction in the same manner as the shape of the tray cover 8A, and moves in the X direction to reach Corner Mc.

In the same manner, in the same manner, the position of the tray cover 8A is moved while passing through the point Md at the center of the side portion to reach the corner portion Me, and Mf, Mg, Mh, Mi, and Mj are moved to the inside side again. Again in the area on the right side, one side gradually spirals around the side and gradually moves inward, and ends at the end Mk at the center.

As a result, the scattering pattern M4 can be formed such that the scattering starting point Ma or the end point Mk is not disposed on the outer peripheral portion, and the granular resin is uniformly dispersed as a whole while minimizing the portion which is not scattered. In the molding processing step, when the resin is heated and the particulate resin of the above-described scattering pattern M4 becomes a flowing state, it flows in the shape of the tray cover 8A, and as a result, it can be formed in the same pattern as the preformed resin 5 or 6. The area pattern S1 of the resin distribution state. Therefore, in the molding processing step, defects such as a tolerance of the bonding wire 3 or more are not generated, and the resin can be surely filled into the cavity K.

Further, by setting the scattering pattern M4 of the particulate resin as described above, in the case of dispersing the granular resin, even if the amount of dispersion at the starting point or the end point is uneven, the influence can be minimized in the outer peripheral portion. Thereby, a molding step of bringing the resin into a state of being filled can be carried out. Further, since the amount of the dispersion of the particulate resin in the peripheral portion is substantially uniform, the filling state of the resin in the peripheral portion is stabilized.

(Sixth embodiment)

Fig. 13 shows a sixth embodiment. Hereinafter, a portion different from the third embodiment shown in Fig. 10 and the fifth embodiment shown in Fig. 12 will be described. In the sixth embodiment, unlike the previous embodiment, the arrangement state of the semiconductor element 1 on the mounting substrate 2 is followed. different. In other words, as shown in FIG. 13(a), in the embodiment, the semiconductor element 1 is disposed in each of the area on the right side of the mounting substrate 2 and the area on the left side, and six of the central portions are not disposed. The implementation of the molding step is indicated.

In this case, in the portion where the semiconductor element 1 is not disposed, the amount of resin required is increased in the molding step to compensate for the volume of the portion. According to this case, for example, two scattering patterns M5, M6 are set to increase the amount of the dispersed particulate resin. Fig. 13(b) shows the scattering pattern M5, and Fig. 13(c) shows the scattering pattern M6.

The scatter pattern M5 shown in Fig. 13(b) is applied to the scatter pattern M2 in the third embodiment of Fig. 10. In this embodiment, the scattering pattern M5 is set in such a manner that the amount of dropping of the granular resin from the nozzle is a fixed speed, and the moving speed of the nozzle is also set to a fixed speed, but by a different moving pitch. The movement trajectory is made to make the amount of dispersion different. Further, a tray 8 having a tray cover 8A having a shape along the area pattern S1 is used instead of the tray 7 on which the granular resin is dispersed. In other words, the tray 8 is formed in a frame shape that is opened so as to have a shape corresponding to the shape of the region pattern S1 corresponding to the shape of the preformed resins 5 and 6 without forming the scattering region defined by the tray cover 8A.

In the scattering pattern M5 shown in Fig. 13 (b), the scattering region of the particulate resin is divided into three regions. Each of the left and right regions in the X direction is a low-density scattering region, and a region in the central portion where the semiconductor element 1 is not disposed is a high-density scattering region. In the formation of the scattering pattern M5, the nozzle is moved from the start point Ma at the lower right in the drawing, and is moved in the Y direction so as to be slightly inclined toward the inner side (X direction) along the line pattern S1, and passes through the central portion Mb. Further, along the outer shape of the area pattern S1, the line moves in the Y direction to reach the corner portion Mc. In the same manner as in the case of the dispersion pattern M2, the points Md and Me are reached. However, in the region where the semiconductor element 1 is disposed, the distance between the tracks is d1 and moves in the same manner.

Then, when reaching the point Me1 in the vicinity of the region where the central portion of the semiconductor element 1 is not disposed, the moving pitch of the nozzle is set to d2, which is narrower than the previous moving pitch d1 (d1>d2). Thereby, the amount of scattering per unit area can be increased. After that, when arriving at the area to the central part At the point of the end portion Me2, since the region in which the semiconductor element 1 is disposed is approached again, the particle resin is dispersed in the same manner as the scattering pattern M2 while moving the nozzle at the moving pitch d1. As a result, it is possible to set a pattern in which the granular resin is dispersed as in the illustrated scattering pattern M5.

As a result, in the molding processing step, when the resin is heated, the amount of the dispersion of the particulate resin is different in the region where the semiconductor element 1 is disposed and the region where the semiconductor element 1 is not disposed, whereby even more resin is required. The portion may be set to the same state so that the region pattern S1 of the resin distribution state as the pattern of the preformed resin 5 or 6 can be formed. Therefore, in the molding processing step, defects such as a tolerance of the bonding wire 3 or more are not generated, and the resin can be surely filled into the cavity K.

Next, the scatter pattern M6 shown in Fig. 13(c) is applied to the scatter pattern M4 in the fifth embodiment of Fig. 12. In this embodiment, the scattering pattern M6 is set such that the amount of the granular resin from the nozzle is set to a fixed speed, and the moving speed of the nozzle is also set to a fixed speed, but by different The pitch is moved by its trajectory so that the amount of dispersion is different. Further, a tray 8 having a tray cover 8A having a shape along the area pattern S1 is used instead of the tray 7 on which the granular resin is dispersed. In other words, the tray 8 is formed in a frame shape that is opened so as to have a shape corresponding to the shape of the region pattern S1 corresponding to the shape of the preformed resins 5 and 6 without forming the scattering region defined by the tray cover 8A.

In the scattering pattern M6 shown in Fig. 13 (c), the scattering region of the particulate resin is divided into three regions. The region on the left and right in the X direction is a rectangular spiral low-density scattering region, and the region in the central portion where the semiconductor element 1 is not disposed is a high-density scattering region. In the formation of the scattering pattern M6, the scattering start point Ma is set at the central portion of the rectangular spiral low-density scattering region on the left side in the drawing. From the scattering start point Ma, the addition of the particulate resin is started, and then the nozzle is moved in a rectangular spiral shape and dispersed so as to have a specific pitch d1 with the adjacent track. In this case, the movement of the nozzle in the Y direction is substantially in the Y direction, and the movement of the nozzle in the X direction is performed in the Y direction along the shape of the tray cover 8A. Move inside and spread the granular resin on one side. Thereafter, when the position of the nozzle reaches the portion Mb closest to the side of the tray cover 8A, it moves in the X direction while moving along the Y direction in the same manner along the shape of the tray cover 8A to reach the angle. Department Mc.

In the same manner, in the same manner, as the shape of the tray cover 8A is moved, it passes through the point Md at the center of the side portion and reaches the corner portion Me, thereby reaching the point Mf1 to the upper portion. The position of the point Mf1 is a boundary portion where the region of the semiconductor element 1 and the region of the central portion where the semiconductor element 1 is not disposed are disposed. The interval from the point Mf1 to the position Mf2 of the end portion of the center portion is spread at a setting that narrows the movement pitch of the trajectory to d2 in the same manner as the high-density region of the central portion of the scattering pattern M5.

Then, when reaching the point Mf2 of the end portion of the region where the semiconductor element 1 is not disposed in the center portion, the rectangular pitch is d1 in the same manner as the rectangular spiral low-density region of the region on the left side. Spread the granular resin. Hereinafter, after passing through the points Mg, Mh, Mi, and Mj, the inner side is moved again. Again in the area on the right side, one side gradually spirals around the side and gradually moves inward, and ends at the end Mk at the center.

As a result, the scattering pattern M4 can be formed such that the scattering starting point Ma or the end point Mk is not disposed on the outer peripheral portion, and the granular resin is uniformly dispersed as a whole while minimizing the portion which is not scattered. Thereby, in the molding processing step, when the resin is heated, the amount of the dispersion of the particulate resin is different in the region where the semiconductor element 1 is disposed and the region where the semiconductor element 1 is not disposed, whereby even more resin is required. The portion may be set to the same state so that the region pattern S1 of the resin distribution state as the pattern of the preformed resin 5 or 6 can be formed. Therefore, in the molding processing step, defects such as a tolerance of the bonding wire 3 or more are not generated, and the resin can be surely filled into the cavity K.

Further, by setting the scattering pattern M6 of the particulate resin as described above, even when the amount of dispersion at the starting point or the end point is uneven when the granular resin is dispersed, the influence can be minimized in the outer peripheral portion. Molding to make the resin filled in just the right state step. Further, since the amount of the dispersion of the particulate resin in the peripheral portion is substantially uniform, the filling state of the resin in the peripheral portion is stabilized.

Further, in the above-described embodiment, an appropriate scattering pattern such as a narrowing of the distance between the portions in which a large amount of the resin is dispersed and an increase in the amount of scattering can be set in accordance with the arrangement state of the semiconductor element 1.

Further, as a method of increasing the amount of scattering, when the amount of dripping from the nozzle is set to be variable, it may be carried out as follows. For example, the scattering pattern M2 shown in FIG. 10 can be used to increase the amount of dropping of the particulate resin in the region where the central portion of the semiconductor element 1 is not disposed, and to spread the same pitch of the moving pitch d1. Further, the scattering pattern M6 shown in FIG. 13(c) can be dispersed in the same manner as the moving pitch is set to d1, whereby the same object can be achieved.

(Other embodiments)

In addition to the cases described in the above embodiments, the following modifications are also applicable.

In this embodiment, the scattering trajectory of the granule resin is described as being linear. However, when it is dispersed in the area pattern S1 or the tray cover 7A, it may be distributed in a curved shape along the outer shape.

The shape of the preformed resins 5 and 6 may not be formed in a linear shape. As long as it is formed in a manner that substantially satisfies the condition, it is possible to appropriately flow in the cavity K at the time of the molding step.

The preformed resins 5 and 6 are embodiments in the case of one implementation, but may be set to the same arrangement shape by arranging a plurality of small ones.

Each of the above embodiments can be combined as appropriate.

While a number of embodiments of the invention have been described, these embodiments are presented by way of example only and are not intended to limit the scope of the invention. The novel embodiments can be embodied in a variety of other forms and can be carried out without departing from the scope of the invention. Omit, replace, change. These embodiments and variations thereof are included in the scope of the invention and the scope of the invention as set forth in the appended claims.

1‧‧‧Semiconductor components

2‧‧‧Installation substrate

3‧‧‧bonding line

5‧‧‧Preformed resin

10‧‧‧Upper mold

11‧‧‧ Lower mold

11a‧‧‧ bottom mold

11b‧‧‧Bottom mode

C1‧‧‧ X-direction outside the cavity

C2‧‧‧ outside the Y-direction of the cavity

K‧‧‧ cavity

LA1‧‧‧ distance

LA2‧‧‧ distance

LB1‧‧‧ distance

LB2‧‧‧ distance

P1‧‧‧ corner

P2‧‧‧ corner

Q1‧‧‧Central Department

Q2‧‧‧Central Department

X‧‧‧ direction

Y‧‧‧ direction

Claims (6)

A method of manufacturing a semiconductor device, comprising the steps of: mounting a mounting substrate on an upper mold, the mounting substrate comprising a wire-bonded semiconductor component; disposing a preformed resin in a lower mold; and forming the upper mold and the lower mold Forming a cavity therebetween and heating the pre-formed resin; and molding the upper mold against the pre-formed resin; and the pre-formed resin is in the corner of the preformed resin The distance between the end portion of the shape line close to the cavity and the outline line is LA, and the distance between the central portion of the pre-formed resin and the center line farthest from the cavity is LB Then, the distance LB is formed to be larger than the distance LA. A method of manufacturing a semiconductor device, comprising the steps of: mounting a mounting substrate on an upper mold, the mounting substrate comprising a wire-bonded semiconductor component; and spreading from a nozzle movable relative to a tray having a tray cover having a rectangular opening a granular resin on the tray, wherein the granular resin disposed in a specific scattering pattern is placed in the lower mold; a cavity is formed between the upper mold and the lower mold, and the granular resin is heated; and The resin which is heated and plastically deformed is molded; and the nozzle draws a trajectory along the shape of the opening of the tray cover, and the moving speed of the nozzle is zero or decreased at the corner of the opening to increase the amount of dispersion of the particulate resin. A method of manufacturing a semiconductor device, comprising the steps of: mounting a mounting substrate on an upper mold, the mounting substrate comprising a wire-bonded semiconductor component; and spreading from a nozzle movable relative to a tray having a tray cover having a rectangular opening a granular resin on the tray, wherein the granular resin disposed in a specific scattering pattern is placed in the lower mold; a cavity is formed between the upper mold and the lower mold, and the granular resin is heated; and Forming a resin that is heated and plastically deformed; and dispersing: a corner portion of the outermost outer shape of the shape drawn by the trajectory of the scattering, and a distance from the outer line of the opening is LA, in the scattering The distance between the side portion of the outermost outer shape of the shape drawn by the trajectory and the central portion of the outer shape of the opening is LB, and the distance LB is larger than the distance LA. A method of manufacturing a semiconductor device, comprising the steps of: mounting a mounting substrate on an upper mold, the mounting substrate comprising a wire-bonded semiconductor component; and a nozzle movable relative to a tray having a tray cover having a rectangular opening Disposing a granular resin on the tray to the opening of the tray cover, and placing a granular resin disposed in a specific scattering pattern on the mounting substrate; forming a cavity between the upper mold and the lower mold, and heating the above a granular resin; and a pellet resin which is plastically deformed by the heating; and is dispersed in such a manner that a corner portion of the outermost outer shape of the shape drawn by the trajectory of the scattering is formed outside the opening The distance is LA, and the distance between the side of the outermost outer shape of the shape drawn by the above-described trajectory and the center of the line outside the opening is LB, and the distance LB is larger than the distance LA. A method of manufacturing a semiconductor device, comprising the steps of: mounting a mounting substrate on an upper mold, the mounting substrate comprising a wire-bonded semiconductor component; and spreading from a nozzle movable relative to a tray having a tray cover having a rectangular opening a granular resin on the tray, wherein a granular resin disposed in a specific scattering pattern is placed in the lower mold; a cavity is formed between the upper mold and the lower mold, and the granular resin is heated; The pelletized resin which is plastically deformed by heating is formed; and the nozzle draws a locus that moves from the scattering start position of the granular resin to the outer peripheral side, and then traces the movement from the outer peripheral side to the inner side, and stops the scattering at the inner side. A manufacturing method of a semiconductor device, comprising the steps of: mounting a mounting substrate on an upper mold, the mounting substrate comprising a wire-bonded semiconductor component; and dispersing a granular resin on the tray from a nozzle movable relative to the tray to be dispersed a specific configuration state of the particulate resin is placed in the lower mold; a cavity is formed between the upper mold and the lower mold, and the granular resin is heated; and the granular resin which is plastically deformed by the heating is formed; The movement speed of the nozzle is lowered or the distance between the movement tracks is shortened in a portion where the arrangement density of the semiconductor element provided on the mounting substrate is lower than a portion where the arrangement density of the semiconductor element provided on the mounting substrate is high. .