CN105990161B - The manufacturing method of semiconductor device - Google Patents
The manufacturing method of semiconductor device Download PDFInfo
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- CN105990161B CN105990161B CN201510098282.8A CN201510098282A CN105990161B CN 105990161 B CN105990161 B CN 105990161B CN 201510098282 A CN201510098282 A CN 201510098282A CN 105990161 B CN105990161 B CN 105990161B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
Abstract
Embodiments of the present invention provide a kind of manufacturing method that can make the immobilising semiconductor device of resin in compression molding.The manufacturing method of the semiconductor device of embodiment includes the following steps：Installation substrate is mounted on upper mold, the installation substrate includes the semiconductor element after wire bonding；By the configuration of preformed resin in lower mold；Die cavity is formed between the upper mold and the lower mold, and heats the preformed resin；And the upper mold is pressed against the preformed resin and is shaped；And the preformed resin is：It enables in the corner of above-mentioned preformed resin, with be LA at a distance from the end that the trim line relative to the die cavity is close, in the edge of above-mentioned preformed resin, it is and be LB at a distance from farthest central portion with the trim line relative to the die cavity, then distance LB is formed larger than distance LA.
Description
[related application]
Present application was enjoyed with No. 2014-187679 (applying date of Japanese patent application case：On September 16th, 2014) it is used as base
The priority of plinth application case.Present application includes the full content of basic application case by referring to the basis application case.
Technical field
Embodiments of the present invention are related to a kind of manufacturing method of semiconductor device.
Background technology
In the manufacturing step of semiconductor device, shape as follows：In the step of carrying out resin seal, by resin
It is arranged in the mold of compression molding apparatuss, multiple semiconductor elements then in the state of installing substrate, are utilized resin
Cover these semiconductor elements.After making ester moulding, by integrally formed resin with installation substrate with each semiconductor element
Each cuts off for unit.
In this case, as the method that resin is arranged in the mold of compression molding apparatuss, there are as below methods：It will make
Particulate resin etc. is pre-formed into the die cavity that the resin obtained by the shape more smaller than the shape of ester moulding is positioned in mold.In addition,
As other methods, having the methods of following：On pallet regulation will be studded in the range of the cavity dimension for being slightly less than mold
The die cavity of the particulate resin of amount and winner transfer to mold.
Specifically, for example, will the installation substrate of the semiconductor element before resin seal be arranged in a matrix so that half
Conductor element state absorption directed downwardly is maintained at upper mold.Then, will be arranged using the sealing resin material of the method configuration
In the die cavity surrounded by lower frame mould and lower bed die.Later, lower die is made to rise overally, and the region to being surrounded by upper mold and lower die
It is depressurized.As a result, defoam the air in sealing resin material.Sealing resin material is by heat and the decompression of mold
Melting, foaming, to be extended in die cavity.
Then, so that the rising of lower frame mould is arranged after the installation substrate of upper mold forms die cavity completely until being contacted with, making
Lower bed die rises and bubble in the resin after racking foaming while, sealing resin material was unfolded to entire die cavity, in flower
After the expense stipulated time makes hardening of resin with defined pressure, so that lower die is declined and take out formed products.
In the step, be arranged lower die sealing resin material be it is smaller than mold one circle rectangle.In the situation
Under, the size of the resin material of mounting be preferably set to such as will not excessively to foam in decompression position and from upper and lower mould it
Between the size just of gate break stock less and that lead to peripheral part is leaked out or extended to outside die cavity.In addition, being more than in conducting wire
In the case that tolerance deviates, there are following situations, that is, generates and applies excessive power to conducting wire and conducting wire is caused to be broken or connect
Touch in semiconductor element and short circuit unfavorable condition.
However, being actually difficult with the size of the resin material of lucky size setting mounting.Especially if shaping
When sealing resin material outside is escaped to out of die cavity, then will be unable to produce, so being preferential not make resin leakage
Under conditions of implement.As a result, generating the gate break (Wire Sweep) of peripheral part in sealing in order to prevent, and take increasing
Big line footpath does not configure the countermeasures such as semiconductor element in the part for generating gate break.
Invention content
Present embodiment provides a kind of manufacturing method of semiconductor device, and the manufacturing method of the semiconductor device can be in profit
When carrying out resin seal with compression molding apparatuss, resin is set in a manner of equably being extended after melting, foaming in mold.
The manufacturing method of the semiconductor device of present embodiment includes the following steps：Installation substrate is mounted on upper mold,
The installation substrate includes the semiconductor element after wire bonding (WIRE BONDING)；Preformed resin is configured in lower die
In tool；Die cavity is formed between the upper mold and the lower mold, and heats the preformed resin；And will be described on
Mold is pressed against the preformed resin and shapes；And the preformed resin is：It enables in above-mentioned preformed resin
Corner, be LA at a distance from the end that the trim line relative to the die cavity is close, on the side of above-mentioned preformed resin
Portion, with relative to the die cavity trim line be be LB at a distance from farthest central portion, then distance LB be formed larger than away from
From LA.
Description of the drawings
Fig. 1 is the flow chart for the manufacturing step for indicating first embodiment.
Fig. 2~4 are the schematic plans for the manufacturing step for indicating semiconductor device.
Fig. 5 (a), Fig. 6 (a), Fig. 7 (a) are the diagrammatic tops of the semiconductor device and sealing resin in molding step
Figure.
Fig. 5 (b), Fig. 6 (b), Fig. 7 (b) are the schematic cross sectional views for the state for indicating the mold in molding step.
Fig. 8 is the vertical view for having sealing resin of different shapes.
Fig. 9 is the vertical view of the distribution pattern for the particulate resin for indicating to illustrate second embodiment.
Figure 10 is the vertical view of the distribution pattern for the particulate resin for indicating to illustrate third embodiment.
Figure 11 is the vertical view of the distribution pattern for the particulate resin for indicating the 4th embodiment of explanation.
Figure 12 is the vertical view of the distribution pattern for the particulate resin for indicating the 5th embodiment of explanation.
Figure 13 (a)~(c) is the vertical view of the distribution pattern for the particulate resin for indicating to illustrate sixth embodiment.
Specific implementation mode
In the following, being illustrated to multiple embodiments with reference to attached drawing.In addition, attached drawing is schematically to scheme, thickness and plane
The relationship of size, ratio of thickness of each layer etc. may not be consistent with reality.In addition, about direction up and down, expression will under
State semiconductor substrate circuit formed surface side be set as up or down in the case of opposite direction, also may not with acceleration of gravity
Direction on the basis of direction is consistent.
(first embodiment)
Fig. 1 is to Fig. 8 shows first embodiments.In this embodiment, the example of following situation is illustrated：It is inciting somebody to action
Multiple semiconductor elements 1 will shape then in installation substrate 2 and in the case of utilizing this multiple semiconductor element 1 of resin seal
Preceding resin preform and use.
First, referring to FIG. 1 and FIG. 2~Fig. 4 illustrates the flow of schematically step on the whole.Fig. 1 shows steps
Flow, Fig. 2~Fig. 4 are the states indicated with schematic plan in step.
As shown in Figure 1, first, semiconductor element 1 is mounted on installation substrate (S1).Specifically, as shown in Fig. 2, it is sharp
It will be cut off rectangular semiconductor element 1 by various procedure of processings on a semiconductor substrate with solid etc. and then installed
Substrate 2.Herein, to installing substrate 2, by semiconductor element 1 be for example configured to longitudinal arrangement three, it is eight transversely arranged
Rectangular state then.In installation substrate 2, correspondingly formed around it with the position for packaging semiconductor 1
Bond pad.
Then, implement the wire bonding step (S2) that bonding line 3 is connected to each semiconductor element 1.In each semiconductor element
Between the bond pad of 2 side of each bond pad and installation substrate of four edge of part 1, as shown in Fig. 2, for example using bonding apparatus connection
The bonding line 3 of gold thread (Au wire).The bond pad of installation substrate 2 be installation substrate 2 back side formed via through-hole it is logical
Road (via), to be connected to the metal gasket for being formed in back side.
Then, implement by cover then multiple semiconductor elements 1 in installation substrate 2 it is whole in a manner of form resin 4
Molding procedure of processing (S3).In this case, in molding procedure of processing, as shown in figure 3, being connect by compression molding with covering
It and carries out mould-forming in the whole mode of multiple semiconductor elements 1 of installation substrate 2 and form resin 4.In addition, hereinafter
The details of the molding procedure of processing is described.
Later, it by soldered ball forming step (S4), carries out forming scolding tin etc. in the lead terminal part that installation substrate 2 exposes
The processing of metal soldered ball.In addition, soldered ball forming step S4 can be omitted.That is, for example being filled through the semiconductor obtained by cut-out in encapsulation
In the case that the lead terminal for the side set forms metal soldered ball, metal soldered ball can not also be formed in semiconductor device side.
Then, implementing the part comprising resin 4 formed thereby inside will be then in the semiconductor element 1 of installation substrate 2
The cutting step (S5) not cut off.Herein, as shown in figure 4, in such a way that each semiconductor element 1 for installing substrate 2 to be cut off
It is cut off from resin 4 upper edge cutting line A1 and cutting line A2.About cutting line A1, A2, stock as shown is to include each semiconductor
The part of element 1 and bonding line 3 is unit cutting line A1 respectively in X direction and the cutting line A2 of Y-direction is cut off, thus
Cut off into single semiconductor device.
Then, the molding procedure of processing S3 is concretely demonstrated with reference to Fig. 5~Fig. 7.In this embodiment, make
For the resin used in molding procedure of processing, preform resin 5 is used.Preform resin 5 is using according to the big of installation substrate 2
The tree of line footpath or allocation position of small or semiconductor element 1 size or bonding line 3 etc. and shape as defined in being pre-formed into
Fat.In this case, preform resin 5 is by shaping for example powdered thinner particulate resin, and as defined in being formed as
Shape.
As the shape of preform resin 5, slightly smaller size is shaped so as to substantially identical with installation substrate 2, but
In this embodiment, as shown in Fig. 5 (a), in the shape that corner is prominent and is retreated in edge.Specifically, with after forming
Resin 4 the trim line C1 of the corresponding X-direction of shape and the trim line C2 of Y-direction indicate it is following molding processing unit (plant)s moulds
The outer shaped position of chamber K.That is, partly forming resin 4 made of being divided by trim line C1, C2.
About preform resin 5, in the edge of X-direction, the trim line C1 of the X-direction relative to opposite die cavity K becomes
The distance of the corner P1 of the points of proximity is LA1, and the distance for becoming the central portion Q1 in farthest point is LB1 (＞ LA1), and is formed as edge
In the shape of concavity.In addition, similarly, about preform resin 5, edge in the Y direction, relative to opposite die cavity
The trim line C2 of Y-direction, the distance for becoming the corner P2 of the points of proximity is LA2, and the distance for becoming the central portion Q2 in farthest point is LB2
(＞ LA2), and it is identically formed the shape for edge in concavity.
In addition, in the present specification, " corner " also includes the so-called fillet that top has radian.
Then, the particular content for molding procedure of processing is illustrated.It first, will be then more as shown in Fig. 5 (a), (b)
A semiconductor element 1 and be configured to rectangular installation substrate 2 so that semiconductor element 1 then side state directed downwardly
Absorption is maintained at upper mold 10.Then, will utilize the setting of the method preformed molded seal preform resin 5 by
In the die cavity K that the lower frame mould 11b of lower mold 11 and lower bed die 11a is surrounded.Fig. 5 (a) indicates preform resin 5 and installation substrate 2
Configuration relation, Fig. 5 (b) indicates for preform resin 5 to be positioned in the state of lower mold 11.In Fig. 5 (b), about installation substrate
2, it indicates to cross the part that the cutting line 5B-5B lines on semiconductor element 1 are cut off with the Y-direction along Fig. 5 (a).In the following,
In Fig. 6 (b), Fig. 7 (b), the part cut off with identical cutting line is also illustrated that.
Then, as shown in Fig. 6 (a), (b), lower mold 11 is made to rise overally, and using the mechanism of decompressor to by upper mold 10 with
It is depressurized the inside for the die cavity K that lower mold 11 surrounds.At this point, being heated by heating mechanism in die cavity K, preform resin 5 is on one side
It is depressurized the resin 5a for becoming heated on one side, and is expanded while deforming, and the air expansion that inside is included, to pre-
Shaping resin 5 becomes the state for including bubble 5b.
Decompression is the gas vent being connected to outside in the slave die cavity K of lower mold 11, is subtracted using exhaust pump etc.
Press mechanism and implement, thus bubble 5b is vented to outside, to which the bubble 5b inside preform resin 5 is gradually discharged.
Under the state, resin 5a extends in die cavity K, to be gradually reduced at a distance from the gap of the side wall surface of die cavity K.As a result,
The resin 5a of deformation is further deformed into covering and is arranged then in the semiconductor element 1 of installation substrate 2 and the region of bonding line 3
Interior state.
Then, as shown in Fig. 7 (a), (b), lower frame mould 11b is made to increase until being contacted with the installation lining being arranged in upper mold 10
After so that die cavity K is in completely enclosed state until bottom 2, lower bed die 11a is made to increase, it on one side will be in the resin 5a that foamed
Bubble racks, and sealing resin material is unfolded to entire die cavity on one side.The shape of resin 5c shown in Fig. 7 (a) is in turn as a result,
It is unfolded in such a way that gap reduces in die cavity K.At this point, stock becomes covering installation lining in the state of resin 5a as described above
Therefore the semiconductor element 1 at bottom 2 and the size of bonding line 3 when making lower bed die 11a rise, are avoided as due to resin 5c flows
Bonding line 3 is washed away into the such state of tolerance or more.
Become the state that resin 5c is filled into the position of trim line C1, C2 in die cavity K as a result,.In this state, when
When spending the stipulated time to make resin 5c hardening so that lower mold 11 is declined later with defined pressure, resin 4 is with the state of hardening
It is formed in installation substrate 2.When adsorbed state of the releasing using upper mold 10, can be taken off with formation by processing by molding
The installation substrate 2 of resin 4.
The preform resin 5 in the case of molding processing is carried out as stock as described above, stock preferably as described below considers
Distance LA1, LB1 as defined in trim line C1 to die cavity K, the shape of configuration file to distance LA2, LB2 as defined in trim line C2
Shape.The setting of these distances be set to touch in die cavity K when preform resin 5 is expanded because of heating trim line C1,
The distance of the degree of C2.In addition, in this state, preform resin 5 is set to that being arranged for semiconductor element 1 is completely covered
The part of bonding line 3 and the degree that will not be squeezed out out of die cavity K.
By forming preform resin 5 like this, and preform resin 5 is flowed by heating in molding procedure of processing
When, tolerance or more will not be deviated by being connected to the bonding line 3 of semiconductor element 1.In addition, preform resin 5 can be made with certainly
The mode at the angle being filled into die cavity K flows, and can be in the state for the situation that the resin extruded outside to die cavity K is also not present
Under carry out molding processing.For example, in the case where being short shape by preform ester moulding, there are following situations：The center on each side
Nearby by close to expanding in a manner of elliptical and extending, resin material is leaked out from the central part on each side to outside.In addition,
In the case where wanting that resin material is made not leak out from the central part on each side to outside, existing can not be filled into die cavity K
The case where corner.
In Fig. 8, preform resin 6 is indicated instead of the preform resin 5.The preform resin 6 also meet with it is described
5 identical condition of preform resin, but the shape of edge is different.That is, in preform resin 6, with the trim line C1 of die cavity K,
C2 corresponding trim line 6a, 6b are the shapes for having straight line portion.
That is, in the topographic pattern of preform resin 5, the central portion of shape is with distance LA1, LA2 relative to corner
Mode as longest distance LB1, LB2 is formed.In contrast, in the topographic pattern of preform resin 6, there is following shape
Shape, that is, distance LA1, LA2 in the corner relative to shape, if closer to center, distance slightly sharp becomes at once
Short is LB1, LB2, and the part for becoming recess portion is formed as linear.
It is substantially the same when can also obtain with using the preform resin 5 by using this preform resin 6
Function and effect.
(second embodiment)
Fig. 9 indicates second embodiment, in the following, a pair part different from first embodiment illustrates.In the implementation
In mode, from first embodiment the case where is different, not uses preform resin, but by die cavity K in regulation shape
Shape dispersed particulates resin and supply forming resin.
That is, as the particulate resin being positioned in die cavity K, to be configured to from nozzle dropwise addition by by powdered resin
Provide the particulate resin of the distribution pattern of shape.About particulate resin from the dropwise addition of nozzle, particulate resin is temporarily dispersed in support
Disk 7, and by its transfer to die cavity K, it is thereby configured to regulation shape.
The pallet 7 spread for particulate resin is illustrated in fig.9.Pallet 7 has the pallet cover 7A of the rectangle as frame portion,
And linear trim line 7a, 7b corresponding with trim line C1, C2 of die cavity K are set as on the inside of the opening of pallet cover 7A.
The particulate resin of distribution is to be configured to spread pattern M1 with zone map S1 similar modes, and zone map S1 and first is real
The shape for applying preform resin 5,6 shown in mode is corresponding.Because particulate resin is added dropwise from nozzle with fixed speed,
By making nozzle or pallet 7 relatively move, is formed using the distribution track of particulate resin and spread pattern M1.
In distribution pattern M1 shown in Fig. 9, make nozzle since figure lower right spread out initial point Ma, when along the side Y
To it is mobile and to when reaching corner Mb, moving direction is changed into X-direction, only move regulation spacing d and to when reaching point Mc, then
Secondary moved along Y-direction and turn back.It is only mobile in X direction to provide when the position of nozzle is to the specified position Md for reaching following portion
It spacing d and then secondary is moved along Y-direction.In the following, by repeating the mobile pattern until until reaching maximal end point Me, it can
Form crenellation pattern as shown in the figure.Moreover, in this embodiment, the corner of whole outer shape is located in nozzle
Time point makes the mobile stopping certain time of nozzle or movement speed is made to reduce, the regions MM for increasing dispersion volume are consequently formed.
Configure the more regions MM of the dispersion volume of particulate resin in corner on the whole as a result,.As a result, by being located at corner
Particulate resin amount it is more, when resin is heated, can be plastically deformed because of melting in molding procedure of processing, to shape
The zone map S1 of the identical resin distribution state of pattern of Cheng Ruyu preforms resin 5 or 6.Therefore, in molding procedure of processing
In, it not will produce a problem that bonding line 3 deviates tolerance or more, resin can be certainly filled into die cavity K.
In addition, in the distribution for the particulate resin being added dropwise from nozzle, make dispersion volume by changing the movement speed of nozzle
Difference, but in the case where that can change the dripping quantity itself from nozzle, can not also change movement speed, and by making
Grainy resin generates variation from the dripping quantity of nozzle and forms identical distribution pattern.
(third embodiment)
Figure 10 indicates third embodiment, in the following, a pair part different from second embodiment illustrates.In the implementation
It in mode, proceeds as follows setting and is formed and spread pattern M2, that is, particulate resin is to fix speed from the dripping quantity of nozzle
Degree, and the movement speed of nozzle is also set as fixed speed, but keep the mobile route of nozzle different.Distribution pattern M2 is Yi Yanqu
The mode indention dispersed particulates resin of the shape of region pattern S1, zone map S1 are the figures such as with preform resin 5 or 6
The pattern of the identical stock of case.
That is, illustrating the pallet 7 spread for particulate resin in Fig. 10.The particulate resin of distribution be with the second embodiment party
The corresponding mode of the shape of zone map S1 shown in formula, which configures, spreads pattern M2.Particle is added dropwise from nozzle with fixed speed
Resin, and nozzle or pallet 7 is made relatively to move, it is consequently formed and spreads pattern M2.
In distribution pattern M2 shown in Fig. 10, make nozzle since figure lower right spread out initial point Ma, when with edge
The trim line of zone map S1 moves along Y-direction gently towards inside (X-direction) inclined mode and when to the Mb for reaching central portion,
And then by the trim line along zone map S1 gently towards outside (X-direction) it is inclined in a manner of along Y-direction move and to reaching corner
Mc。
Then, moving direction is changed into X-direction, only mobile regulation spacing, but at this point, the movement of X-direction is with edge
The trim line of zone map S1 moves gently towards inside (Y-direction) inclined mode and in X direction to when reaching point Md, again edge
Y-direction moves.It more in the inner part, when being moved along Y-direction, is not tilted in the X direction than outermost circumferential portion, and to provide spacing
D is moved in a manner of forming crenellation pattern.Moreover, when the position of nozzle is to the specified position Me for reaching following portion, with edge
The trim line of zone map S1 moves gently towards inside (Y-direction) inclined mode and in X direction to after reaching point Me, again edge
Y-direction moves.
In the following, the mobile pattern is repeated, when to the corner Mf for reaching most peripheral, again with the mobile phase with Ma~Mc
With mode, by the trim line along zone map S1 gently towards inside (X-direction) it is inclined in a manner of along Y-direction move and to reaching
When the Mg of central portion, so by the trim line along zone map S1 gently towards outside (X-direction) it is inclined in a manner of move along Y-direction
And reach corner Mh to terminal.Zigzag distribution pattern is formed in a manner of the shape along zone map S1 in this way
M2。
As a result, can be utilized with opposite with the shape of zone map S1 in molding procedure of processing, when resin is heated
The particulate resin that the track answered is spread forms the region of the resin distribution state of stock such as identical as the pattern of preform resin 5 or 6
Pattern S1.Therefore, in molding procedure of processing, it not will produce a problem that bonding line 3 deviates tolerance or more, it can be by resin
It is certainly filled into die cavity K.
(the 4th embodiment)
Figure 11 indicates that the 4th embodiment instead of the pallet 7 spread for particulate resin, and uses in this embodiment
The pallet 8 of pallet cover 8A with the shape along zone map S1.That is, pallet 8 is not the dispersion zone for making to be divided by pallet cover 8A
Domain is formed as rectangle, and is formed as with the side of the shape as zone map S1 corresponding with the shape of preform resin 5,6
The frame shape of formula opening.
In this embodiment, particulate resin is spread with spreading the crenellation pattern of pattern M3.The distribution pattern M3 with
Distribution pattern M1 in second embodiment is similar, but does not form the regions MM for increasing dispersion volume.That is, in spreading pattern M3,
Make nozzle since figure lower right spread out initial point Ma, when moved along Y-direction and to when reaching corner Mb, by moving direction
X-direction is changed into, regulation spacing d is only moved to when reaching point Mc, moves and turn back along Y-direction again.When the position of nozzle
When to the specified position Md for reaching following portion, regulation spacing d is only moved in X direction and then secondary is moved along Y-direction.In the following, logical
It crosses and repeats the mobile pattern until until reaching maximal end point Me, crenellation pattern as shown in the figure can be formed.
As a result, in molding procedure of processing, when resin is heated, and the particulate resin for spreading pattern M3 becomes flowing
It when state, is flowed in a manner of the shape along pallet cover 8A, as a result can form stock such as identical as the pattern of preform resin 5 or 6
Resin distribution state zone map S1.Therefore, in molding procedure of processing, not will produce bonding line 3 deviate tolerance with
Resin can be certainly filled into die cavity K by a problem that upper.
In addition, in this embodiment, though using the distribution pattern M3 of particulate resin, pallet 8 and support can also be used
Disk cover 8A is spread with the distribution pattern M1 in second embodiment, or also can be with the scatter diagram in third embodiment
Case M2 is spread.In this case, identical function and effect can also be obtained.
(the 5th embodiment)
Figure 12 indicates the 5th embodiment.In the following, a pair part different from the 4th embodiment illustrates.In the implementation
In mode, instead of the distribution pattern M3 of particulate resin, and uses and spread pattern M4.
That is, in this embodiment, using the pallet 8 with pallet cover 8A identical with the 4th embodiment, to spread
Pattern M4 dispersed particulates resins.The opening shape of pallet cover 8A is the zone map with the shape corresponding to preform resin 5,6
Shape same S1.
It is spread in pattern M4 shown in Figure 12, spread out the central portion that initial point Ma is set at the region in left side in figure.
Since this spread out initial point Ma be added dropwise particulate resin, so that the rectangular helical form of nozzle is moved to outer peripheral side later, with adjoining
Track exist such as regulation spacing d mode spread.In this case, movement of the nozzle to Y-direction is generally along Y
Direction is moved, and movement of the nozzle to X-direction is the also inside sidesway in the Y direction in a manner of the shape along pallet cover 8A on one side
It is dynamic, one side dispersed particulates resin.Later, when the position of nozzle is to when reaching part Mb immediate with the edge of pallet cover 8A,
It is also moved in the Y direction in a manner of the shape along pallet cover 8A on one side in an identical manner, moves and reach in X direction on one side
To corner Mc.
In the following, in an identical manner, passing through edge center while moving in a manner of the shape along pallet cover 8A
Point Md and to reaching corner Me, internally side is moved again after Mf, Mg, Mh, Mi, Mj.Again in the region on right side, one
The rectangular helical form in side gradually moves inward around one side, terminates to spread at the terminal Mk positioned at central part.
As a result, following distribution pattern M4 can be formed, that is, it will not spread starting point Ma or terminal Mk and configure in outer peripheral portion,
In addition, oning the whole uniformly distributed particulate resin while reducing the part of no distribution to the greatest extent.In molding procedure of processing, when
Resin is when by heating, the particulate resin for spreading pattern M4 becomes flow regime, the stream in a manner of the shape along pallet cover 8A
It is dynamic, it as a result can form the zone map S1 of the resin distribution state of stock such as identical as the pattern of preform resin 5 or 6.Therefore, exist
It molds in procedure of processing, not will produce a problem that bonding line 3 deviates tolerance or more, resin can be certainly filled into mould
In chamber K.
In addition, the distribution pattern M4 of particulate resin is set by stock as described above, and in the case of dispersed particulates resin,
Even if in the case where beginning or end dispersion volume generates uneven, also its influence can be reduced as possible in peripheral part, so as to implement
The molding step for keeping the occupied state of resin lucky.In addition, because the dispersion volume in peripheral portion particulate resin is substantial uniform,
So the occupied state of the resin of peripheral portion is stablized.
(sixth embodiment)
Figure 13 indicates sixth embodiment, in the following, pair with third embodiment shown in Fig. 10, it is the 5th real shown in Figure 12
The different part of mode is applied to illustrate.It is different from embodiment before in the sixth embodiment, then served as a contrast in installation
The configuration status of the semiconductor element 1 at bottom 2 is different.That is, as shown in Figure 13 (a), in this embodiment, to by semiconductor element
1 respectively install substrate 2 right area and left area respectively configuration nine, six of center portion are not configured in the case of
The implementation of molding step is indicated.
In this case, in the part that semiconductor element 1 is not configured, increase required amount of resin in molding step with more
Mend the volume of the part.It according to the situation, sets such as two and spreads pattern M5, M6, to increase the particulate resin spread
Amount.Figure 13 (b) indicates that spreading pattern M5, Figure 13 (c) indicates distribution pattern M6.
The distribution pattern M2 in the third embodiment of pattern M5 application drawings 10 is spread shown in Figure 13 (b).In the implementation
In mode, configure the distribution pattern M5 set as follows, that is, particulate resin from the dripping quantity of nozzle be fixed speed,
And the movement speed of nozzle is also set as fixed speed, but make to dissipate by carrying out the motion track of nozzle with different mobile spacing
Cloth amount is different.In addition, instead of the pallet 7 spread for particulate resin, and use the pallet cover with the shape along zone map S1
The pallet 8 of 8A.That is, pallet 8 not so that the dispersion zone divided by pallet cover 8A is formed as rectangle, and be formed as with become in advance
The frame shape that the mode of the shape of the corresponding zone map S1 of shape of shaping resin 5,6 is open.
It is spread in pattern M5 shown in Figure 13 (b), the dispersion zone of particulate resin is divided into three regions.X-direction
Each region of left and right is low-density dispersion zone, and the region that semiconductor element 1 is not configured of central portion is high density dispersion zone.
Formed spread pattern M5 when, make nozzle since figure lower right spread out initial point Ma, with along the shape of zone map S1
Line moves along Y-direction gently towards inside (X-direction) inclined mode and via the Mb of central portion, and then along the outer of zone map S1
Shape line moves along Y-direction and to reaching corner Mc.In the following, to reaching point Md, Me, but it in the same manner as the case where spreading pattern M2
Afterwards in the region for configuring semiconductor element 1, the spacing of track is d1, and is similarly moved.
Then, when to the point Me1 for reaching the region for closing on the central portion that semiconductor element 1 is not configured, by the shifting of nozzle
Dynamic spacing is set as d2, narrows (d1 ＞ d2) than mobile spacing d1 before.Thus, it is possible to increase the dispersion volume of per unit area.It
Afterwards, as the point Me2 of the end to the region for reaching central portion, because closing on the region for configuring semiconductor element 1 again, institute
By on one side make nozzle to move the spacing d1 movement dispersed particulates resin in a manner of identical with distribution pattern M2 on one side.As a result,
The pattern that distribution pattern M5 as shown is studded with particulate resin like that can be set.
As a result, in molding procedure of processing, when resin is heated, in the region for configuring semiconductor element 1 and not
In the region of configuring semiconductor element 1, keep the dispersion volume of particulate resin different, even if thus in the part for needing more resin,
Also it can be set as lucky state, so as to be formed such as the resin distribution state of stock identical as the pattern of preform resin 5 or 6
Zone map S1.Therefore, it in molding procedure of processing, not will produce a problem that bonding line 3 deviates tolerance or more, can incite somebody to action
Resin is certainly filled into die cavity K.
Then, the distribution pattern M4 in the 5th embodiment of pattern M6 application drawings 12 is spread shown in Figure 13 (c).At this
In embodiment, configure the distribution pattern M6 set as follows, that is, also make particulate resin from the dripping quantity of nozzle be solid
Constant speed degree, and the movement speed of nozzle is also set as fixed speed, but by carrying out the motion track of nozzle at different pitches
Keep dispersion volume different.In addition, instead of the pallet 7 spread for particulate resin, and use the support with the shape along zone map S1
The pallet 8 of disk cover 8A.That is, pallet 8 not makes the dispersion zone divided by pallet cover 8A be formed as rectangle, and be formed as to become
The frame shape that the mode of the shape of zone map S1 corresponding with the shape of preform resin 5,6 is open.
It is spread in pattern M6 shown in Figure 13 (c), the dispersion zone of particulate resin is divided into three regions.X-direction
The region of left and right is rectangular coil shape low-density dispersion zone, and the region that semiconductor element 1 is not configured of central portion is high density
Dispersion zone.When forming distribution pattern M6, it spread out the rectangular coil shape low-density that initial point Ma is set on the left of in figure and dissipates
The central portion in cloth region.Particulate resin is added dropwise since this spread out initial point Ma, makes the rectangular helical form movement of nozzle later, and
It is spread in a manner of there is such as regulation spacing d1 with adjacent track.In this case, the movement of nozzle to Y-direction is big
To be moved along Y-direction on body, movement of the nozzle to X-direction be on one side in a manner of the shape along pallet cover 8A also in the Y direction
Move inward, one side dispersed particulates resin.Later, when the position of nozzle is to reaching and the immediate portion of the edge of pallet cover 8A
When point Mb, ined X direction while also being moved along Y-direction in a manner of the shape along pallet cover 8A in an identical manner move and
To reaching corner Mc.
In the following, in an identical manner, passing through edge center while moving in a manner of the shape along pallet cover 8A
Point Md and to corner Me is reached, to reach the point Mf1 of supreme rim portion.The position of point Mf1 configures semiconductor element 1
The junction section in region and the region that semiconductor element 1 is not configured of central portion.From the point Mf1 to the position of the end of central portion
Section until Mf2 is in a manner of identical with the high density dispersion zone of central portion of pattern M5 is spread, in the shifting for making track
It is spread under the setting that dynamic spacing constriction is d2.
Then, as the point Mf2 of the end to the region that semiconductor element 1 is not configured for reaching central portion, with left side
The identical mode of rectangular coil shape low-density dispersion zone in region, with the rectangular helical form distributions of the mobile spacing d1 of nozzle
Grainy resin.In the following, internally side is moved again after passing point Mg, Mh, Mi, Mj.Again in right area, the rectangular spiral shell in one side
Rotation shape gradually moves inward around one side, terminates to spread at the terminal Mk positioned at central part.
As a result, following distribution pattern M4 can be formed, that is, it will not spread starting point Ma or terminal Mk and configure in outer peripheral portion,
In addition, oning the whole uniformly distributed particulate resin while reducing the part of no distribution to the greatest extent.As a result, in molding procedure of processing
In, when resin is heated, in the region for configuring semiconductor element 1 and the region that semiconductor element 1 is not configured, make particle tree
The dispersion volume of fat is different, even if lucky state can be also set as, in the part for needing more resin so as to be formed as a result,
The zone map S1 of the resin distribution state of stock such as identical as the pattern of preform resin 5 or 6.Therefore, in molding procedure of processing
In, it not will produce a problem that bonding line 3 deviates tolerance or more, resin can be certainly filled into die cavity K.
In addition, setting the distribution pattern M6 of particulate resin by stock as described above, in the case of dispersed particulates resin, i.e.,
Just in the case where beginning or end dispersion volume generates uneven, also its influence can be reduced as possible in peripheral part, so as to implement to make
The lucky molding step of the occupied state of resin.In addition, because the dispersion volume in peripheral portion particulate resin is substantial uniform, institute
Stablized with the occupied state of the resin of peripheral portion.
In addition, in said embodiment, it can be according to the configuration status of semiconductor element 1, setting makes the more particle of distribution
The spacing of the part of resin such as narrows and increases dispersion volume at the distribution pattern appropriate.
It, also can be with by being set as variable from the dripping quantity of nozzle in addition, as the method for increasing dispersion volume
As under type is implemented.Also can use example distribution pattern M2 as shown in Figure 10, the central portion of semiconductor element 1 is being not configured
Region increases the dripping quantity of particulate resin, and is spread with the track of identical mobile spacing d1.In addition, for Figure 13 (c)
Shown in spread pattern M6, also can in an identical manner will mobile spacing to be set as d1 constant and spread, thus may achieve phase
Same purpose.
(other embodiment)
In addition to except illustrated in the embodiment the case where, it can also be suitable for following variation pattern.
In this embodiment, the distribution track of particulate resin is to be illustrated with being set as linear situation, but work as
It, also can be in a manner of along the outer shape of zone map S1 or pallet cover 7A in song when being dispersed in zone map S1 or pallet cover 7A
Threadiness is spread.
The shape of preform resin 5,6 can not also be formed with linear trim line.As long as substantially to meet condition
Mode is formed, then can suitably be flowed in die cavity K in molding step.
About preform resin 5,6, the embodiment in the case of implementing with one is illustrated, but also can be by will be small
The configuration of preform resin 5,6 of type is multiple and is set as identical configuration shape.
Each embodiment can be appropriately combined.
Though several embodiments of the present invention are illustrated, these embodiments are proposed as example
, it is not intended to limit the range of invention.These novel embodiments can be implemented with various other ways, and can not depart from
In the range of inventive concept, various omissions, substitutions and changes are carried out.These embodiments or its variation are included in the range invented
Or in purport, and in the range of invention and its equalization recorded in claims.
[explanation of symbol]
1 semiconductor element
2 installation substrates
3 bonding lines
4 resins
5,6 preform resin
7,8 pallet
7A, 8A pallet cover
10 upper molds
11 times molds
Bed die under 11a
11b lower frame moulds
Claims (6)
1. a kind of manufacturing method of semiconductor device, it is characterised in that include the following steps：
Installation substrate is mounted on upper mold, the installation substrate includes the semiconductor element after wire bonding；
By the configuration of preformed resin in lower mold；
Die cavity is formed between the upper mold and the lower mold, and heats the preformed resin；And
The upper mold is pressed against the preformed resin and is shaped；And
The preformed resin is：It enables in the corner of above-mentioned preformed resin, the trim line relative to the die cavity is to connect
Close end is LA at a distance from the trim line, in the edge of above-mentioned preformed resin, the trim line relative to the die cavity
At a distance from the trim line it is LB for farthest central portion, then distance LB is formed larger than distance LA.
2. a kind of manufacturing method of semiconductor device, it is characterised in that include the following steps：
Installation substrate is mounted on upper mold, the installation substrate includes the semiconductor element after wire bonding；
By from can with have comprising rectangle opening portion pallet cover pallet relatively move nozzle dispersed particulates resin in institute
It states on pallet and is configured to specifically spread the particulate resin of pattern, be positioned in lower mold；
Die cavity is formed between the upper mold and the lower mold, and heats the particulate resin；And
Make the ester moulding being plastically deformed by the heating；And
The nozzle depicts the track of the shape along the opening portion of the pallet cover, makes the spray in the corner of the opening portion
The movement speed of mouth is zero or reduces and increases the dispersion volume of particulate resin.
3. a kind of manufacturing method of semiconductor device, it is characterised in that include the following steps：
Installation substrate is mounted on upper mold, the installation substrate includes the semiconductor element after wire bonding；
By from can with have comprising rectangle opening portion pallet cover pallet relatively move nozzle dispersed particulates resin in institute
It states on pallet and is configured to specifically spread the particulate resin of pattern, be positioned in lower mold；
Die cavity is formed between the upper mold and the lower mold, and heats the particulate resin；And
Make the ester moulding being plastically deformed by the heating；And
Proceed as follows distribution：The corner for enabling the shape of the most peripheral for the shape depicted in the track of the distribution, with
The distance of the trim line of the opening portion is LA, on the side of the shape of the most peripheral for the shape that the track of the distribution is depicted
It is LB at a distance from portion, with the central portion of the trim line of the opening portion, then distance LB is more than distance LA.
4. a kind of manufacturing method of semiconductor device, it is characterised in that include the following steps：
Installation substrate is mounted on upper mold, the installation substrate includes the semiconductor element after wire bonding；
By from can with have comprising rectangle opening portion pallet cover pallet relatively move nozzle on the pallet to institute
It states dispersed particulates resin in the opening portion of pallet cover and is configured to specifically spread the particulate resin of pattern, be positioned in lower mold
It is interior；
Die cavity is formed between the upper mold and the lower mold, and heats the particulate resin；And
Make the particulate resin forming being plastically deformed by the heating；And
Proceed as follows distribution：The corner for enabling the shape of the most peripheral for the shape depicted in the track of the distribution, with
The distance of the trim line of the opening portion is LA, on the side of the shape of the most peripheral for the shape that the track of the distribution is depicted
It is LB at a distance from portion, with the central portion of the trim line of the opening portion, then distance LB is more than distance LA.
5. a kind of manufacturing method of semiconductor device, it is characterised in that include the following steps：
Installation substrate is mounted on upper mold, the installation substrate includes the semiconductor element after wire bonding；
It will be from can shifting opposite with having the pallet of pallet cover of opening portion of shape that is prominent included in corner and retreating in edge
Dynamic nozzle dispersed particulates resin is configured to specifically spread the particulate resin of pattern on the pallet, is positioned in lower mold
It is interior；
Die cavity is formed between the upper mold and the lower mold, and heats the particulate resin；And
Make the particulate resin forming being plastically deformed by the heating；And
The nozzle is depicted from the dissemination position of the particulate resin positioned at one side region of the opening portion helically
The track that shape moves to outer peripheral side is depicted thereafter from positioned at the outer of the region of the side area adjacency with the opening portion
The track that side moves inward in the shape of a spiral, and stop spreading in the position of inside.
6. a kind of manufacturing method of semiconductor device, it is characterised in that include the following steps：
Installation substrate is mounted on upper mold, the installation substrate includes the semiconductor element after wire bonding；
It will be spread from the nozzle dispersed particulates resin that can be relatively moved with pallet into specific configuration status on the pallet
Particulate resin, be positioned in lower mold；
Die cavity is formed between the upper mold and the lower mold, and heats the particulate resin；And
Make the particulate resin forming being plastically deformed by the heating；And
Be arranged it is described installation substrate the semiconductor element the higher part of configuration density compared with, configuration density compared with
Low part makes the movement speed of the nozzle reduce or shorten the spacing of motion track.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-187679 | 2014-09-16 | ||
| JP2014187679A JP6282564B2 (en) | 2014-09-16 | 2014-09-16 | Manufacturing method of semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN105990161A CN105990161A (en) | 2016-10-05 |
| CN105990161B true CN105990161B (en) | 2018-09-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510098282.8A Active CN105990161B (en) | 2014-09-16 | 2015-03-05 | The manufacturing method of semiconductor device |
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|---|---|
| JP (1) | JP6282564B2 (en) |
| CN (1) | CN105990161B (en) |
| TW (1) | TWI587408B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1378254A (en) * | 2001-03-27 | 2002-11-06 | 冲电气工业株式会社 | Method for producing chip, seal device, metal mold and runner and semiconductor device |
| JP2005225067A (en) * | 2004-02-13 | 2005-08-25 | Apic Yamada Corp | Method and apparatus for molding resin |
| JP2006256195A (en) * | 2005-03-18 | 2006-09-28 | Towa Corp | Compression-molding method of electronic component and resin material |
| CN101180170A (en) * | 2005-11-04 | 2008-05-14 | 东和株式会社 | Molding apparatus for resin encapsulation of electronic part |
| JP4369901B2 (en) * | 2005-06-22 | 2009-11-25 | 住友重機械工業株式会社 | Sealing device |
| CN103921384A (en) * | 2008-08-08 | 2014-07-16 | 东和株式会社 | Method For Compression-molding Electronic Component And Die Apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5192749B2 (en) * | 2007-08-10 | 2013-05-08 | Ｔｏｗａ株式会社 | Optical element resin sealing molding method and apparatus |
| JP5086945B2 (en) * | 2008-09-05 | 2012-11-28 | 株式会社東芝 | Manufacturing method of semiconductor device |
| SG172031A1 (en) * | 2008-12-10 | 2011-07-28 | Sumitomo Bakelite Co | Granulated epoxy resin composition for semiconductor encapsulation, semiconductor device using same, and method for manufacturing semiconductor device |
| JP2014103176A (en) * | 2012-11-16 | 2014-06-05 | Shin Etsu Chem Co Ltd | Sealing material with support base material, substrate having sealed semiconductor element mounted thereon, wafer having sealed semiconductor element formed thereon, semiconductor device, and method for manufacturing semiconductor device |
-
2014
- 2014-09-16 JP JP2014187679A patent/JP6282564B2/en active Active
-
2015
- 2015-03-04 TW TW104106886A patent/TWI587408B/en active
- 2015-03-05 CN CN201510098282.8A patent/CN105990161B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1378254A (en) * | 2001-03-27 | 2002-11-06 | 冲电气工业株式会社 | Method for producing chip, seal device, metal mold and runner and semiconductor device |
| JP2005225067A (en) * | 2004-02-13 | 2005-08-25 | Apic Yamada Corp | Method and apparatus for molding resin |
| JP2006256195A (en) * | 2005-03-18 | 2006-09-28 | Towa Corp | Compression-molding method of electronic component and resin material |
| JP4369901B2 (en) * | 2005-06-22 | 2009-11-25 | 住友重機械工業株式会社 | Sealing device |
| CN101180170A (en) * | 2005-11-04 | 2008-05-14 | 东和株式会社 | Molding apparatus for resin encapsulation of electronic part |
| CN103921384A (en) * | 2008-08-08 | 2014-07-16 | 东和株式会社 | Method For Compression-molding Electronic Component And Die Apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016062961A (en) | 2016-04-25 |
| TWI587408B (en) | 2017-06-11 |
| JP6282564B2 (en) | 2018-02-21 |
| CN105990161A (en) | 2016-10-05 |
| TW201612993A (en) | 2016-04-01 |
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