TWI587197B - Optical touch panel and fabricating method thereof and optical touch display panel - Google Patents

Description

Optical touch panel, manufacturing method thereof and optical touch display panel

The present invention relates to a touch panel, and more particularly to an optical touch panel and an optical touch display panel.

Integrating a touch panel into a liquid crystal display (LCD) not only allows users to make convenient and fast input, but also provides interactive access functions, and thus has been gradually applied to some portable electronic devices. Medium, such as a mobile phone, a personal digital assistant (PDA), or a laptop.

At present, there is a technology for integrating touch and display functions by embedding light sensing elements in a pixel array of a liquid crystal display. Specifically, the inductive light source (such as infrared light) provided by the touch sensing method for the backlight module passes through the display and is reflected to the light sensing element via a reflector such as a finger. In this way, it is determined whether or not a touch event occurs by the voltage drop caused by the light leakage current generated by the light sensing element under illumination.

However, since the light sensing element and the reading circuit are located on the pixel array side of the liquid crystal display, the area of the light transmitting area on the pixel array side is compressed, resulting in a decrease in the transmittance of the display. Under this circumstance, the backlight module must provide higher power to achieve the same sensing signal, resulting in more power consumption. In addition, since the resolution of the light sensing component is limited by the resolution of the display. Therefore, it is difficult to increase the resolution of the light sensing element to be greater than the resolution of the display.

The invention provides an optical touch panel with better transmittance and touch sensitivity.

The present invention further provides a method of manufacturing an optical touch panel to fabricate the optical touch panel described above.

The invention further provides an optical touch display panel having a high aperture ratio, and wherein the sensing element has a better resolution.

The present invention further provides a method of manufacturing an optical touch display panel to fabricate the optical touch panel described above.

The invention provides an optical touch panel comprising a first substrate, an infrared light filter layer, a first patterned conductive layer, a first dielectric layer, a channel layer, a second patterned conductive layer, a transparent electrode, and a second A dielectric layer, an infrared light sensing layer, and a patterned light-shielding conductive layer. The first substrate has an inner surface. The infrared light filter layer is disposed on an inner surface of the substrate. The first patterned conductive layer includes at least one gate and at least one scan line connected to the gate, wherein the gate and the scan line are on the inner surface of the substrate. The first dielectric layer is disposed on the substrate to cover the gate and the scan line. The channel layer is disposed on the first dielectric layer and above the gate. The second patterned conductive layer includes at least one source and at least one drain, respectively located at two sides of the channel layer, and electrically connected to the channel layer. The transparent electrode is disposed on the infrared light filter layer and electrically connected to one of the source and the drain. The second dielectric layer covers the second patterned conductive layer and a portion of the transparent electrode. The infrared light sensing layer is disposed on the transparent electrode. The patterned light-shielding conductive layer includes a sensing electrode and a light-shielding electrode, and the sensing electrode is disposed on the infrared light sensing layer The light-shielding electrode is disposed on the second dielectric layer and aligned with the channel layer.

The invention further provides a method of manufacturing an optical touch panel. An infrared light filter layer is formed on the inner surface of the substrate. Forming a first patterned conductive layer on the substrate, comprising at least one gate and at least one scan line connected to the gate, wherein the gate and the scan line are on the inner surface of the substrate. A first dielectric layer is formed on the substrate to cover the gate and the scan line. A channel layer is formed on the first dielectric layer, wherein the channel layer is above the gate. Forming a second patterned conductive layer on the substrate, the second patterned conductive layer includes at least one source and at least one drain, respectively located at two sides of the channel layer, and electrically connected to the channel layer. A transparent electrode is formed on the infrared light filter layer, and is electrically connected to one of the source and the drain. Forming a second dielectric layer on the substrate, covering the second patterned conductive layer and the partially transparent electrode. An infrared light sensing layer is formed on the transparent electrode. A patterned light-shielding conductive layer is formed on the substrate, and includes a sensing electrode and a light-shielding electrode. The sensing electrode is disposed on the infrared light sensing layer, and the light-shielding electrode is disposed on the second dielectric layer and aligned with the channel layer.

The invention further provides an optical touch display panel, comprising a first substrate, an infrared light filter layer, a first patterned conductive layer, a first dielectric layer, a channel layer, a second patterned conductive layer, a transparent electrode, a second dielectric layer, an infrared light sensing layer, a patterned light-shielding conductive layer, a second substrate, and a display medium layer. The first substrate has an inner surface. The infrared light filter layer is disposed on an inner surface of the substrate. The first patterned conductive layer includes at least one gate and at least one scan line connected to the gate, wherein the gate and the scan line are on the inner surface of the substrate. The first dielectric layer is disposed on the substrate to cover the gate and the scan line. The channel layer is disposed on the first dielectric layer and above the gate. Second pattern The conductive layer includes at least one source and at least one drain, respectively located at two sides of the channel layer, and electrically connected to the channel layer. The transparent electrode is disposed on the infrared light filter layer and electrically connected to one of the source and the drain. The second dielectric layer covers the second patterned conductive layer and a portion of the transparent electrode. The infrared light sensing layer is disposed on the transparent electrode. The patterned light-shielding conductive layer includes a sensing electrode and a light-shielding electrode, the sensing electrode is disposed on the infrared light sensing layer, and the light-shielding electrode is disposed on the second dielectric layer and aligned with the channel layer. The second substrate is disposed opposite to the first substrate, and the second substrate faces the inner surface of the first substrate. The display medium layer is disposed between the first substrate and the second substrate.

The invention further provides a method for manufacturing an optical touch display panel. A substrate is provided, the substrate having an inner surface. An infrared light filter layer is formed on the inner surface of the substrate. Forming a first patterned conductive layer on the substrate, comprising at least one gate and at least one scan line connected to the gate, wherein the gate and the scan line are on the inner surface of the substrate. A first dielectric layer is formed on the substrate to cover the gate and the scan line. A channel layer is formed on the first dielectric layer, wherein the channel layer is above the gate. Forming a second patterned conductive layer on the substrate, the second patterned conductive layer includes at least one source and at least one drain, respectively located at two sides of the channel layer, and electrically connected to the channel layer. A transparent electrode is formed on the infrared light filter layer, and is electrically connected to one of the source and the drain. Forming a second dielectric layer on the substrate, covering the second patterned conductive layer and the partially transparent electrode. An infrared light sensing layer is formed on the transparent electrode. A patterned light-shielding conductive layer is formed on the substrate, and includes a sensing electrode and a light-shielding electrode. The sensing electrode is disposed on the infrared light sensing layer, and the light-shielding electrode is disposed on the second dielectric layer and aligned with the channel layer. Providing a second substrate such that the second substrate is opposite to the first substrate And the second substrate faces the inner surface of the first substrate. A display medium layer is formed between the first substrate and the second substrate.

Based on the above, the optical touch panel and the optical touch display panel of the present invention have better transmittance and touch sensitivity. In the manufacturing method of the optical touch panel and the optical touch display panel, the light-shielding electrode is fabricated together with the sensing electrode, and thus has a simple process and a low manufacturing cost. In addition, since the light-shielding electrode is aligned with the channel layer, it is possible to prevent the channel layer from being affected by light irradiation or the like to improve the stability of the channel layer. Therefore, the optical touch panel and the optical touch display panel have better component characteristics.

The above described features and advantages of the present invention will be more apparent from the following description.

[First Embodiment]

1A to 1I are schematic cross-sectional views showing a method of fabricating an optical touch panel according to a first embodiment of the present invention. Referring to FIG. 1A, first, a substrate 110 is provided, wherein the substrate 110 has an inner surface 110a and an outer surface 110b, wherein the outer surface 110b faces the user. Next, an infrared light filter layer IRF is formed on the inner surface 110a of the substrate 110. In the present embodiment, the material of the infrared light filter layer IRF includes, for example, a ruthenium compound or a ruthenium compound.

Referring to FIG. 1B, a first patterned conductive layer 120 is formed on the substrate 110. The first patterned conductive layer 120 includes at least one gate GE and at least one scan line (not labeled) connected to the gate GE. Gate The GE and scan lines are located on the inner surface 110a of the substrate 110. The material of the first patterned conductive layer 120 is, for example, a metal or metal laminate that is electrically conductive.

Referring to FIG. 1C, a first dielectric layer GI is formed on the substrate 110 to cover the gate GE and the scan line SL. In this embodiment, the first dielectric layer GI is, for example, more covered with the infrared light filter layer IRF. The material of the first dielectric layer GI may be an insulating material such as yttrium oxide or tantalum nitride having a high dielectric constant. Then, a transparent electrode TE is formed on the infrared light filter layer IRF. The material of the transparent electrode TE may be a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, or other suitable oxide, or at least two of the above Stacked layers.

Referring to FIG. 1D, a channel layer CH is formed on the first dielectric layer GI, wherein the channel layer CH is located above the gate GE. In this embodiment, after the channel layer CH is formed, the ohmic contact layer OC may be further formed on the corresponding channel layer CH to reduce the resistance between the channel layer CH and the subsequent film layer (source and drain).

Referring to FIG. 1E, a second patterned conductive layer 130 is formed on the substrate 110. The second patterned conductive layer 130 includes at least one source SE and at least one drain DE, respectively located on both sides of the channel layer CH, and The channel layer CH is electrically connected, wherein the transparent electrode TE is electrically connected to one of the source SE and the drain DE. In this embodiment, the second patterned conductive layer 130 is formed by, for example, forming a metal layer or a metal layer, and then patterning the metal layer or the metal layer to form the source electrode SE and the drain electrode DE. A portion of the ohmic contact layer OC is removed with the source SE and the drain DE as a mask to form an ohmic contact pattern OCP. Here, gate GE, channel layer CH, source SE The plurality of signal readout transistors T1 are formed with the drain electrodes DE.

Referring to FIG. 1F , a second dielectric layer PV1 is formed on the substrate 110 to cover the second patterned conductive layer 130 and the partially transparent electrode TE. Further, the second dielectric layer PV1 covers, for example, the source SE and the drain DE. In this embodiment, the second dielectric layer PV1 is further patterned to form an opening W1 therein to expose the transparent electrode TE. The material of the second dielectric layer PV1 is, for example, an inorganic material (for example, yttrium oxide, lanthanum nitride, lanthanum oxynitride, lanthanum aluminum oxide or a stacked layer of at least two materials described above), an organic material, or a combination thereof. Of course, the embodiment is not limited thereto, and any material that can provide insulation properties can be selectively applied to the embodiment.

Referring to FIG. 1G, an infrared light sensing layer IRS is formed on the transparent electrode TE, and the infrared light sensing layer IRS is in contact with the transparent electrode TE via the opening W1. The material of the infrared light sensing layer IRS includes, for example, an antimony-rich compound, an antimony-rich compound or a germanium-rich compound, which can have a better sensing effect. Among them, the cerium-rich compound includes, for example, cerium-rich cerium oxide, cerium-rich cerium nitride, cerium-rich cerium carbide, cerium-rich cerium oxide, cerium-rich cerium oxide, cerium-rich cerium hydroxide, cerium-rich cerium hydride hydride, cerium rich Hydrogen carbide. The cerium-rich compound includes, for example, cerium-rich cerium oxide, cerium-rich cerium nitride, cerium-rich cerium carbide, cerium-rich cerium oxide, cerium-rich cerium oxide, cerium-rich cerium hydroxide, cerium-rich cerium hydride hydride, hydrogen-rich carbonization Hey. The cerium-rich compound includes, for example, cerium-rich cerium oxide, cerium-rich cerium nitride, cerium-rich cerium carbide, cerium-rich cerium oxide, cerium-rich cerium oxide, cerium-rich cerium hydroxide矽, rich in bismuth hydrogen hydride, bismuth-rich hydrogen carbide. The above is for illustrative purposes only and does not limit the material of the infrared light sensing layer IRS.

Referring to FIG. 1H, a patterned light-shielding conductive layer 140 is formed on the substrate 110, and includes a sensing electrode E1 and a light-shielding electrode 142. The sensing electrode E1 is disposed on the infrared light sensing layer IRS, and the light-shielding electrode 142 is disposed in the second layer. The dielectric layer PV1 is aligned with the channel layer CH. Here, the transparent electrode TE, the infrared light sensing layer IRS and the sensing electrode E1 constitute a plurality of light sensing elements S, and each of the signal reading transistors T1 is electrically connected to the corresponding light sensing element S. Moreover, the light-shielding electrode 142 can shield the interference caused by the backlight on the channel layer CH. In this way, the light leakage current generated by the signal reading transistor T1 due to the illumination can be reduced, thereby improving the photoelectric characteristics of the signal reading transistor T1.

The optical touch panel 100 of the present embodiment may further include a backlight BLU, such as an infrared light backlight, for enhancing the effect of touch sensing, wherein the patterned light-shielding conductive layer 140 is located at the backlight BLU. Between the channel layer CH and the channel layer. Specifically, in the optical touch panel 100 of the present embodiment, each of the film layers is located between the substrate 110 and the backlight BLU. Therefore, the optical touch panel 100 of the present embodiment can prevent the signal reading transistor T1 and the light sensing element S from being damaged by the external environment and human factors without additional configuration of other protection devices. The light-shielding electrode 142 can shield the interference caused by the backlight on the channel layer CH. In addition, since the light-shielding electrode 142 is formed together with the sensing electrode E1, the optical touch panel 100 of the embodiment can have a relatively simple process and Lower process costs.

Under this architecture, when the user does not touch the optical touch panel 100, current is transmitted from the drain DE of the signal readout transistor T1 to the source SE. When the user touches the outer surface of the touch panel 100 with the finger F or any reflective component, the light L emitted by the backlight BLU is reflected by the finger F, and the reflected light L' is detected by the light sensing layer. The light leakage current is generated by the IRS, and the transparent electrode TE is caused to have a voltage drop (ie, a voltage difference between the sensing electrode E1 and the transparent electrode TE). The voltage drop is read by the chip by a signal readout line (not shown) to determine the location of the user's touch. Of course, the architecture of the touch panel (the light source and the configuration of the film layer) of the present application is not limited thereto. The detailed signal readout circuit design architecture and its planar trace layout are well known to those of ordinary skill in the art and will not be described again.

In this embodiment, the optical touch panel 100 includes a substrate 110, an infrared light filter layer IRF, a first patterned conductive layer 120, a first dielectric layer GI, a channel layer CH, and a second patterned conductive layer 130. The transparent electrode TE, the second dielectric layer PV1, the infrared light sensing layer IRS, and the patterned light-shielding conductive layer 140. The substrate 110 has an inner surface 110a. The infrared light filter layer IRF is disposed on the inner surface 110a of the substrate 110. The first patterned conductive layer 120 includes at least one gate GE and at least one scan line (not shown) connected to the gate GE, wherein the gate GE and the scan line are located on the inner surface 110a of the substrate 110.

The first dielectric layer GI is disposed on the substrate 110 to cover the gate GE and the scan line. The channel layer CH is disposed on the first dielectric layer GI and above the gate GE. The second patterned conductive layer 130 includes at least one source SE and at least one drain DE, respectively located on both sides of the channel layer CH, and electrically connected to the channel layer CH. The transparent electrode TE is disposed on the infrared light filter layer IRF, and is electrically connected to one of the source SE and the drain electrode DE. Second dielectric layer PV1 The second patterned conductive layer 130 and a portion of the transparent electrode TE are covered. The infrared light sensing layer IRS is disposed on the transparent electrode TE. The patterned light-shielding conductive layer 140 includes a sensing electrode E1 and a light-shielding electrode 142. The sensing electrode E1 is disposed on the infrared light sensing layer IRS, and the light-shielding electrode 142 is disposed on the second dielectric layer PV1 and aligned with the channel layer CH.

In this embodiment, the shading electrode 142 can shield the interference caused by the backlight on the channel layer CH. In this way, the light leakage current generated by the signal reading transistor T1 due to the illumination can be reduced, thereby improving the photoelectric characteristics of the signal reading transistor T1. In addition, since the light-shielding electrode 142 is formed together with the sensing electrode E1, the optical touch panel 100 of the present embodiment can have a relatively simple process and a low process cost.

[Second embodiment]

2A to 2I are schematic cross-sectional views showing a method of fabricating an optical touch panel according to a second embodiment of the present invention. The components of the optical touch panel of the second embodiment are the same as those described in the first embodiment. Therefore, the following describes the steps and the differences. The rest may be referred to the first embodiment, and details are not described herein. Referring to FIG. 2A, first, a substrate 110 is provided in which the substrate 110 has an inner surface 110a. Next, a first patterned conductive layer 120 is formed on the inner surface 110a of the substrate 110. The first patterned conductive layer 120 includes at least one gate GE and at least one scan line (not labeled) connected to the gate GE.

Referring to FIG. 2B, a first dielectric layer GI is formed on the substrate 110 to cover the gate GE and the scan line SL. Next, an infrared light filter layer IRF is formed on the inner surface 110a of the substrate 110. In this embodiment, infrared The optical filter layer IRF is formed, for example, on the first dielectric layer GI.

Referring to FIG. 2C, a transparent electrode TE is formed on the infrared light filter layer IRF.

Referring to FIG. 2D, a channel layer CH is formed on the first dielectric layer GI, wherein the channel layer CH is located above the gate GE. In this embodiment, after the channel layer CH is formed, the ohmic contact pattern OCP may be further formed on the corresponding channel layer CH.

Referring to FIG. 2E, a second patterned conductive layer 130 is formed on the substrate 110. The second patterned conductive layer 130 includes at least one source SE and at least one drain DE, respectively located on both sides of the channel layer CH, and The channel layer CH is electrically connected, wherein the transparent electrode TE is electrically connected to one of the source SE and the drain DE. Here, the gate GE, the channel layer CH, the source SE and the drain electrode DE constitute a plurality of signal readout transistors T1.

Referring to FIG. 2F , a second dielectric layer PV1 is formed on the substrate 110 to cover the second patterned conductive layer 130 and the partially transparent electrode TE. The second dielectric layer PV1 covers, for example, the source SE and the drain DE. In this embodiment, the second dielectric layer PV1 is further patterned to form an opening W1 therein to expose the transparent electrode TE.

Referring to FIG. 2G, an infrared light sensing layer IRS is formed on the transparent electrode TE, and the infrared light sensing layer IRS is in contact with the transparent electrode TE via the opening W1.

Referring to FIG. 2H, a patterned light-shielding conductive layer 140 is formed on the substrate 110, and includes a sensing electrode E1 and a light-shielding electrode 142. The sensing electrode E1 is disposed on the infrared light sensing layer IRS, and the light-shielding electrode 142 is disposed in the second layer. The dielectric layer PV1 is aligned with the channel layer CH. Here, the transparent electrode TE, the infrared light sensing layer IRS and the sensing electrode E1 constitute a plurality of light sensing elements S, and each of the signal reading transistors T1 is electrically connected to the corresponding light sensing element S.

Compared with the first embodiment, in this embodiment, the first patterned conductive layer 120 is first formed, and then the infrared light filter layer IRF is fabricated. That is, the user can exchange the first patterned conductive layer 120 and the infrared according to requirements. The order of fabrication of the optical filter layer IRF, the optical touch panel 100 thus fabricated still has the same characteristics as described in the first embodiment.

[Third embodiment]

3A and 3D are schematic cross-sectional views showing a method of fabricating an optical touch display panel according to a third embodiment of the present invention. Referring to FIG. 3A, first, a first substrate 110 is provided in which the structure shown in FIG. 1H has been formed on the inner surface 110a of the first substrate 110. Here, the structure as shown in FIG. 1H can be fabricated by the method described in the first embodiment or the second embodiment.

Referring to FIG. 3B, a black matrix BM may be formed on the inner surface 110a of the first substrate 110. Then, a color filter layer CF may be formed on the inner surface 110a of the first substrate 110. Then, a protective layer PV2 and a transparent conductive layer TCL may be formed on the inner surface 110a of the first substrate 110, wherein the protective layer PV2 covers the black matrix BM and the color filter layer CF. In this embodiment, the color filter layer CF includes, for example, a red filter layer, a green filter layer, and a blue filter layer. The black matrix BM is disposed, for example, between the color filter layers CF.

Please refer to FIG. 3C, and then, the second substrate 200 is provided to make the second substrate. The 200 is disposed opposite to the first substrate 110, and the second substrate 200 faces the inner surface 110a of the first substrate 110. The step of providing the second substrate 200 includes assembling the first substrate 110 and the second substrate 200. In the embodiment, the second substrate 200 is, for example, a pixel array substrate including a plurality of active elements T2. The signal readout transistor T1 on the first substrate 110 is disposed, for example, corresponding to one of the active elements T2, and the light sensing element S on the first substrate 110 is disposed, for example, corresponding to one of the active elements T2. In this way, the arrangement of the signal readout transistor T1 and the photo sensing element S can be prevented from compressing the area of the light transmissive area on the side of the second substrate 200. Next, a display medium layer 300 is formed between the first substrate 110 and the second substrate 200. The display medium layer 300 is, for example, a liquid crystal layer, and the display medium layer 300 may also be an organic light-emitting material layer, which is well known to those skilled in the art and therefore will not be described again.

Referring to FIG. 3D, a backlight BLU is provided, wherein the second substrate 200 is located between the backlight BLU and the first substrate 110. When the organic light-emitting material layer is used for the display medium layer 300, an infrared light-emitting organic light-emitting material layer may be partially used as the backlight BLU. Under this architecture, when the user does not touch the optical touch display panel 10, the current is transmitted from the drain DE of the signal readout transistor T1 to the source SE. When the user touches the outer surface of the optical touch display panel 10 with the finger F or any reflective component, the light L emitted by the backlight BLU is reflected by the finger F, and the reflected light L' is lighted. The sensing layer IRS absorbs and generates a light leakage current, thereby causing a voltage drop of the transparent electrode TE (ie, a voltage difference between the sensing electrode E1 and the transparent electrode TE). The voltage drop is read by the chip by a signal readout line (not shown) to determine the location of the user's touch. Of course, the optical touch of the present application The architecture of the display panel (the configuration of the light source and the film layer) is not limited to this.

In a variant embodiment (not shown), the infrared light filter layer IRF may also comprise a blue light filter layer, a green light filter layer and a red light filter layer, instead, such that the infrared light filter layer IRF For example, it can be fabricated together with the color filter layer CF to simplify the process of the optical touch display panel. In addition, in an embodiment (not shown), the color filter layer CF and the black matrix BM may also be formed on the second substrate 200 to directly integrate the color filter layer CF on the pixel array substrate (Color Filter on Array (COA), or directly integrate the color filter layer CF into the Array on Color Filter (AOC).

In this embodiment, the shading electrode 142 can shield the interference caused by the backlight on the channel layer CH. In this way, the light leakage current generated by the signal reading transistor T1 due to the illumination can be reduced, thereby improving the photoelectric characteristics of the signal reading transistor T1. In addition, since the light-shielding electrode 142 is formed together with the sensing electrode E1, the optical touch display panel 10 of the present embodiment can have a relatively simple process and a low process cost.

In summary, the optical touch panel and the optical touch display panel of the present invention have better transmittance and touch sensitivity. In the manufacturing method of the optical touch panel and the optical touch display panel, the light-shielding electrode is fabricated together with the sensing electrode, and thus has a simple process and a low manufacturing cost. In addition, since the light-shielding electrode is aligned with the channel layer, it is possible to prevent the channel layer from being affected by light irradiation or the like to improve the stability of the channel layer. Therefore, the optical touch panel and the optical touch display panel have better component characteristics.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧Optical touch display panel

100‧‧‧Optical touch panel

110, 200‧‧‧ substrate

110a‧‧‧ inner surface

110b‧‧‧ outer surface

120‧‧‧First patterned conductive layer

130‧‧‧Second patterned conductive layer

140‧‧‧ patterned blackout conductive layer

142‧‧‧ shading electrode

300‧‧‧Display media layer

BLU‧‧‧Backlight

CH‧‧‧ channel layer

DE‧‧‧汲

E1‧‧‧Sensing electrode

F‧‧‧ finger

GE‧‧‧ gate

GI‧‧‧First dielectric layer

IRF‧‧‧Infrared light filter

IRS‧‧‧Infrared light sensing layer

L, L’‧‧‧ rays

OC‧‧ ohm contact layer

OCP‧‧‧ Ohmic contact pattern

PV1‧‧‧second dielectric layer

PV2‧‧‧ protective layer

S‧‧‧Light sensing components

SE‧‧‧ source

T1‧‧‧ signal readout transistor

T2‧‧‧ active components

TE‧‧‧ transparent electrode

W1‧‧‧ openings

1A to 1I are schematic cross-sectional views showing a method of fabricating an optical touch panel according to a first embodiment of the present invention.

2A to 2I are schematic cross-sectional views showing a method of fabricating an optical touch panel according to a second embodiment of the present invention.

3A and 3D are schematic cross-sectional views showing a method of fabricating an optical touch display panel according to a third embodiment of the present invention.

100‧‧‧Optical touch panel

110‧‧‧Substrate

110a‧‧‧ inner surface

110b‧‧‧ outer surface

130‧‧‧Second patterned conductive layer

140‧‧‧ patterned blackout conductive layer

142‧‧‧ shading electrode

BLU‧‧‧Backlight

CH‧‧‧ channel layer

DE‧‧‧汲

E1‧‧‧Sensing electrode

F‧‧‧ finger

GE‧‧‧ gate

GI‧‧‧First dielectric layer

IRF‧‧‧Infrared light filter

IRS‧‧‧Infrared light sensing layer

L, L’‧‧‧ rays

OCP‧‧‧ Ohmic contact pattern

PV1‧‧‧second dielectric layer

S‧‧‧Light sensing components

SE‧‧‧ source

T1‧‧‧ signal readout transistor

TE‧‧‧ transparent electrode

W1‧‧‧ openings

Claims (19)

An optical touch panel includes: a first substrate having an inner surface; an infrared light filter layer disposed on the inner surface of the substrate; a first patterned conductive layer including at least one gate At least one scan line connected to the gate, wherein the gate and the scan line are on the inner surface of the substrate; a first dielectric layer is disposed on the substrate to cover the gate and the scan line a channel layer disposed on the first dielectric layer and above the gate; a second patterned conductive layer comprising at least one source and at least one drain, respectively located on opposite sides of the channel layer And electrically connecting the channel layer; a transparent electrode disposed on the infrared light filter layer, electrically connecting one of the source and the drain; and a second dielectric layer covering the second patterned conductive And a portion of the transparent electrode; an infrared light sensing layer disposed on the transparent electrode; and a patterned light-shielding conductive layer comprising a sensing electrode and a light-shielding electrode, wherein the sensing electrode is disposed in the infrared light sensing The light shielding electrode is disposed on the layer The two dielectric layers and aligned with the channel layer. The optical touch panel of claim 1, wherein the material of the infrared light filter layer comprises a bismuth compound or a bismuth compound. The optical touch panel of claim 1, wherein the infrared light filter layer comprises a blue light filter layer, a green light filter layer and a A stack of red light filter layers. The optical touch panel of claim 1, further comprising a color filter layer disposed on the inner surface of the first substrate. The optical touch panel of claim 1, further comprising a black matrix disposed on the inner surface of the first substrate. The optical touch panel of claim 1, wherein the material of the infrared light sensing layer comprises an antimony-rich compound, a germanium-rich compound or a germanium-rich compound. The optical touch panel of claim 6, wherein the germanium-rich compounds include germanium-rich germanium oxide, germanium-rich tantalum nitride, germanium-rich tantalum carbide, germanium-rich germanium oxide, germanium-rich carbon germanium oxide. , ruthenium hydroxide, ruthenium hydride, ruthenium hydride, ruthenium hydride. The optical touch panel of claim 6, wherein the germanium-rich compounds include germanium-rich germanium oxide, germanium-rich tantalum nitride, germanium-rich tantalum carbide, germanium-rich germanium oxide, germanium-rich carbon germanium oxide. , ruthenium hydroxide, ruthenium hydride, ruthenium hydride, ruthenium hydride. The optical touch panel of claim 6, wherein the germanium-rich compounds include germanium-rich germanium oxide, germanium-rich tantalum nitride, germanium-rich germanium carbide, germanium-rich nitrogen Cerium oxide, cerium-rich cerium oxide, cerium-rich cerium hydroxide, cerium-rich cerium hydride, and cerium-rich cerium. The optical touch panel of claim 1, wherein the second dielectric layer has an opening exposing the transparent electrode, and the infrared light sensing layer contacts the transparent electrode via the opening. The optical touch panel of claim 1, further comprising a backlight, wherein the patterned light-shielding conductive layer is located between the backlight and the channel layers. A method for manufacturing an optical touch panel, comprising: providing a substrate, the substrate having an inner surface; forming an infrared light filter layer on the inner surface of the substrate; forming a first patterned conductive layer on the substrate The layer includes at least one gate and at least one scan line connected to the gate, wherein the gate and the scan line are on the inner surface of the substrate; a first dielectric layer is formed on the substrate to cover The gate electrode and the scan line; forming a channel layer on the first dielectric layer, wherein the channel layer is above the gate; forming a second patterned conductive layer on the substrate, the second patterned conductive layer The layer includes at least one source and at least one drain, respectively located on opposite sides of the channel layer, and electrically connected to the channel layer; forming a transparent electrode on the infrared light filter layer, electrically connecting the source and the Forming a second dielectric layer on the substrate, covering the second patterned conductive layer and a portion of the transparent electrode; forming an infrared light sensing layer on the transparent electrode; and forming on the substrate Forming a patterned mask Conductive layer comprising a sensing electrode and a shielding electrode, the sensing electrodes disposed on the infrared light sensing layer, the shielding electrode is disposed on the second dielectric layer and aligned with the channel layer. The method of manufacturing an optical touch panel according to claim 12, wherein the material of the infrared light filter layer comprises a bismuth compound or a bismuth compound. The method of manufacturing an optical touch panel according to claim 12, wherein the infrared light filter layer comprises a blue light filter layer, a green light filter layer and a red light filter layer. The method for manufacturing an optical touch panel according to claim 12, further comprising forming a color filter layer on the inner surface of the first substrate. The method for manufacturing an optical touch panel according to claim 12, further comprising forming a black matrix on the inner surface of the first substrate. The method of manufacturing the optical touch panel of claim 12, wherein the second dielectric layer has an opening exposing the transparent electrode, and the infrared light sensing layer contacts the transparent electrode via the opening . An optical touch display panel includes: a first substrate having an inner surface; and an infrared light filtering layer disposed on the inner surface of the substrate: a first patterned conductive layer including at least one gate And at least one scan line connected to the gate, wherein the gate and the scan line are on the inner surface of the substrate; a first dielectric layer is disposed on the substrate to cover the gate, the scan a channel layer disposed on the first dielectric layer and located above the gate; a second patterned conductive layer, comprising at least one source and at least one drain, respectively located on opposite sides of the channel layer, and electrically connected to the channel layer; a transparent electrode disposed on the infrared light filter layer Electrically connecting one of the source and the drain; a second dielectric layer covering the second patterned conductive layer and a portion of the transparent electrode; an infrared light sensing layer disposed on the transparent electrode; The patterned light-shielding conductive layer includes a sensing electrode and a light-shielding electrode, the sensing electrode is disposed on the infrared light sensing layer, and the light-shielding electrode is disposed on the second dielectric layer and aligned with the channel layer; a second substrate disposed opposite the first substrate, wherein the second substrate faces the inner surface of the first substrate; and a display dielectric layer disposed between the first substrate and the second substrate. An optical touch panel manufacturing method includes: forming an infrared light filter layer on an inner surface of a first substrate; forming a first patterned conductive layer on the first substrate, including at least one gate And at least one scan line connected to the gate, wherein the gate and the scan line are located on the inner surface of the first substrate; forming a first dielectric layer on the first substrate to cover the gate a scan line; a channel layer is formed on the first dielectric layer, wherein the channel layer is above the gate; a second patterned conductive layer is formed on the first substrate, the second patterned conductive layer Including at least one source and at least one drain, respectively located in the pass Forming a transparent electrode on the infrared light filter layer, electrically connecting one of the source and the drain; forming a first layer on the first substrate a second dielectric layer covering the second patterned conductive layer and a portion of the transparent electrode; forming an infrared light sensing layer on the transparent electrode; forming a patterned light-shielding conductive layer on the first substrate, including a sensing An electrode and a light-shielding electrode, the sensing electrode is disposed on the infrared light sensing layer, the light-shielding electrode is disposed on the second dielectric layer, and is aligned with the channel layer; and a second substrate is provided to enable the second The substrate is disposed opposite to the first substrate, and the second substrate faces the inner surface of the first substrate; and a display medium layer is formed between the first substrate and the second substrate.