KR20240049763A - Display device, method for manufacturing display device, and fingerprint sensor - Google Patents

Abstract

A display device, a method of manufacturing the display device, and a fingerprint sensor are provided. A display device includes a substrate, a light-emitting device layer disposed on the substrate and including a plurality of light-emitting regions each including a light-emitting device that emits light, an encapsulation layer disposed on the light-emitting device layer, and on the encapsulation layer. and a light control layer disposed, wherein the light control layer includes a light-transmitting film that transmits the light and a light-shielding film that blocks the light, and the light-transmitting film overlaps the light-shielding film in the thickness direction of the substrate. It includes a first light-transmitting portion and a plurality of second light-transmitting portions each surrounded by the light-shielding film, and the thickness of the light-shielding film is greater than the thickness of the first light-transmitting portion.

Description

Display device, manufacturing method of the display device, and fingerprint sensor {DISPLAY DEVICE, METHOD FOR MANUFACTURING DISPLAY DEVICE, AND FINGERPRINT SENSOR}

The present invention relates to a display device, a method of manufacturing the display device, and a fingerprint sensor.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. The display device may be a flat panel display such as a liquid crystal display, a field emission display, or a light emitting display. The light emitting display device may include an organic light emitting display device including an organic light emitting diode device as a light emitting device, or a light emitting diode display device including an inorganic light emitting diode device such as an LED (Light Emitting Diode) as a light emitting device.

In the case of vehicle display devices, if the image displayed from the vehicle display device placed in front of the driver or passenger is reflected on the windshield at night, it may interfere with the driver's driving, so it is necessary to control the viewing angle of the image displayed from the vehicle display device. do. Additionally, in order to protect privacy, it is necessary to control the viewing angle of the image displayed on the vehicle display device so that the image displayed on the vehicle display device placed in front of the driver is not provided to passengers.

Meanwhile, the display device may include a fingerprint sensor for fingerprint authentication. Fingerprint sensors can be implemented in optical, ultrasonic, or capacitive ways. An optical fingerprint sensor may include a light sensing unit that detects light, a collimator having an opening that provides light to the light sensing unit, and a light blocking part that blocks the light.

When the fingerprint sensor is placed in the bezel area or non-display area of the display device, there is a limit to expanding the display area of the display device, so recently, the fingerprint sensor has been placed in the display area of the display device. In this case, since the fingerprint sensor is disposed below the display panel, the amount of light incident on the light detection unit of the fingerprint sensor may be small. However, if the area of the light blocking part of the collimator is reduced to increase the amount of light incident on the light detection unit of the fingerprint sensor, the noise light incident on the light detection unit may increase. In this case, fingerprint recognition accuracy may be lowered.

The problem to be solved by the present invention is to provide a display device with improved optical characteristics including a light control layer that simultaneously minimizes the thickness and viewing angle.

Another problem to be solved by the present invention is to provide a method of manufacturing a display device with improved process efficiency.

Another problem that the present invention aims to solve is to provide a fingerprint sensor with improved fingerprint recognition accuracy by removing noise light.

The problems of the present invention are not limited to the problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below.

A display device according to an embodiment for solving the above problem includes a substrate, a light-emitting device layer disposed on the substrate and including a plurality of light-emitting regions each including a light-emitting device that emits light, and a light-emitting device layer on the light-emitting device layer. an encapsulation layer disposed on the encapsulation layer, and a light control layer disposed on the encapsulation layer, wherein the light control layer includes a light-transmitting film that transmits the light and a light-shielding film that blocks the light, and the light-transmitting film , a first light-transmitting portion overlapping the light-shielding film in the thickness direction of the substrate, and a plurality of second light-transmitting portions each surrounded by the light-shielding film, wherein the thickness of the light-shielding film is greater than the thickness of the first light-transmitting portion.

The first width, which is the width of any one of the plurality of second light transmitting units in the first direction, is the distance between any two neighboring second light transmitting units among the plurality of second light transmitting units in the first direction. It may be greater than the first distance.

The ratio of the first distance to the first width may be equal to the ratio of the thickness of the first light transmitting portion to the thickness of the light blocking film.

The ratio of the first distance to the first width may be 1:9 to 2:3.

The first width may be 6μm to 9μm, and the first distance may be 1μm to 4μm.

The thickness of the light-shielding film may be 10 μm to 25 μm, and the thickness of the first light transmitting portion may be 2 μm to 8 μm.

The refractive index of the light-transmitting film may be 1.1 to 1.6.

The light-shielding film may include a light-blocking organic material, and the light-transmitting film may include a transparent organic material.

It is disposed on the light-shielding film and may further include a third light-transmitting part overlapping the light-shielding film in the thickness direction of the substrate.

The third light transmitting part may be made of photoresist or transparent conductive oxide.

The thickness of the light blocking film may be lower than the thickness of any one of the plurality of second light transmitting parts.

It is disposed between the encapsulation layer and the light control layer and further includes a touch layer including a plurality of touch electrodes, and the light shielding film may overlap the plurality of touch electrodes in a thickness direction of the substrate.

It may further include light-shielding patterns each overlapping with the light-shielding film in the thickness direction of the substrate, and each of the light-shielding patterns may be located on an opposite side of the light-shielding film with the first light transmitting part interposed therebetween.

The light blocking pattern may include at least one of Mo, Al, Ti, W, Ag, Cu, and Au.

The light blocking film may not overlap the plurality of light emitting regions in the thickness direction of the substrate.

A method of manufacturing a display device according to an embodiment to solve the above other problems includes providing a display panel including a light-emitting element layer, forming a light-transmitting layer on the display panel, and forming a light-transmitting layer on the light-transmitting layer. Forming a light-shielding layer and forming a mask pattern on the light-shielding layer, etching the light-shielding layer and the light-transmitting layer according to the mask pattern to form a light-shielding layer and a first light-transmitting portion, each including an opening. steps, removing the mask pattern, and filling the opening of the light shielding film and the opening of the first light transmitting portion with an organic material to form a plurality of second light transmitting portions.

The first light transmitting portion may overlap with the light blocking film and may not overlap with any one of the plurality of second light transmitting portions.

A method of manufacturing a display device according to another embodiment for solving the above other problems includes providing a display panel including a light-emitting element layer, forming a first light transmitting portion on the display panel, and forming the first light transmitting portion on the display panel. forming a light-shielding layer on the light-shielding layer, forming a mask pattern on the light-shielding layer, etching the light-shielding layer according to the mask pattern to form a light-shielding film including an opening, removing the mask pattern, and filling the opening of the light shielding film with an organic material to form a plurality of second light transmitting parts.

The first light transmitting portion may overlap one of the plurality of second light transmitting portions and the light blocking film.

A fingerprint sensor according to an embodiment for solving the above another problem includes a light-sensing layer including a light-sensing element through which a sensing current flows according to incident light, and a light control layer disposed on the light-sensing layer. And the light control layer includes first light-transmitting parts arranged to be spaced apart from each other, a light-shielding film each overlapping the first light-transmitting parts in the thickness direction, and a second light-transmitting part disposed between the first light-transmitting parts and between the light-shielding films. It includes light transmitting portions, and the thickness of the light blocking film is greater than the thickness of the first light transmitting portion.

According to the display device according to an embodiment of the present invention, optical characteristics can be improved by including a light control layer that simultaneously minimizes the thickness and viewing angle.

According to the manufacturing method of a display device according to an embodiment of the present invention, process efficiency can be improved.

According to the fingerprint sensor according to an embodiment of the present invention, noise light is removed and fingerprint recognition accuracy can be improved.

Effects according to the embodiments are not limited to the content exemplified above, and further various effects are included in the present specification.

FIG. 1A is a perspective view of a display device according to an exemplary embodiment.
FIG. 1B is an exploded perspective view of a display device according to an exemplary embodiment.
Figure 2 is a plan view showing a display panel according to one embodiment.
Figure 3 is a plan view showing pixels according to one embodiment in more detail.
Figure 4 is a schematic diagram of a display device according to an embodiment applied to a vehicle.
FIG. 5 is a cross-sectional view of the display panel taken along line I-I' of FIG. 1A.
FIG. 6 is a cross-sectional view of the display panel and the light control layer taken along line I-I' of FIG. 1A.
Figure 7 is a cross-sectional view of a light control layer according to one embodiment.
Figure 8 is a cross-sectional view of a light control layer according to another embodiment.
Figure 9 is a cross-sectional view of a light control layer according to another embodiment.
Figure 10 is a cross-sectional view of a light control layer according to another embodiment.
11 is a cross-sectional view of a display panel and a light control layer according to another embodiment.
Figure 12 is a perspective view of a display device according to another embodiment.
Figure 13 is a perspective view showing the fingerprint sensor of Figure 12.
Figure 14 is a cross-sectional view taken along line II-II' of Figure 13.
FIG. 15 is a cross-sectional view showing the fingerprint sensor of FIG. 14 in more detail.
16 is a flowchart showing a method of manufacturing a display device according to an embodiment.
Figure 17 is a cross-sectional view showing step S100 of Figure 16.
Figure 18 is a cross-sectional view showing step S200 of Figure 16.
Figure 19 is a cross-sectional view showing step S300 of Figure 16.
Figure 20 is a cross-sectional view showing step S400 of Figure 16.
Figure 21 is a cross-sectional view showing step S500 of Figure 16.
22 is a flowchart showing a method of manufacturing a display device according to another embodiment.
Figure 23 is a cross-sectional view showing step S100 of Figure 22.
Figure 24 is a cross-sectional view showing step S200 of Figure 22.
Figure 25 is a cross-sectional view showing step S300 of Figure 22.
Figure 26 is a cross-sectional view showing step S400 of Figure 22.
Figure 27 is a cross-sectional view showing step S500 of Figure 22.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

When an element or layer is referred to as “on” another element or layer, it includes instances where the element or layer is directly on top of or intervening with the other element. Likewise, those referred to as “bottom,” “left,” and “right” include cases where they are directly adjacent to other elements or cases where another layer or other material is interposed. Like reference numerals refer to like elements throughout the specification.

Although first, second, etc. are used to describe various components, these components are of course not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be a second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be combined or combined with each other partially or entirely, and various technical interconnections and operations are possible, and each embodiment can be implemented independently of each other or together in a related relationship. It may be possible.

Hereinafter, specific embodiments will be described with reference to the attached drawings.

FIG. 1A is a perspective view of a display device according to an exemplary embodiment. FIG. 1B is an exploded perspective view of a display device according to an exemplary embodiment. Figure 2 is a plan view showing a display panel according to one embodiment. Figure 3 is a plan view showing pixels according to one embodiment in more detail.

1A, 1B, 2, and 3, the display device 10 is a device that displays moving images or still images, and may be used in a mobile phone, a smart phone, or a tablet personal computer. computer), and portable electronic devices such as smart watches, watch phones, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), vehicle displays, and UMPCs (Ultra Mobile PCs). In addition, it can be used as a display screen for various products such as televisions, laptops, monitors, billboards, and the Internet of Things (IOT).

The display device 10 includes an organic light emitting display device using an organic light emitting diode, a quantum dot light emitting display device including a quantum dot light emitting layer, an inorganic light emitting display device including an inorganic semiconductor, and a micro light emitting diode (LED). It may be a light emitting display device such as a small light emitting display device used. Below, the description focuses on the fact that the display device 10 is an organic light emitting display device, but the present invention is not limited thereto.

The display device 10 may include a display panel 100, a display driving circuit 200, a circuit board 300, and a light control layer (LCL).

The display panel 100 may be formed as a rectangular plane having a long side in the first direction DR1 and a short side in the second direction DR2 that intersects the first direction DR1. A corner where the long side in the first direction DR1 and the short side in the second direction DR2 meet may be rounded to have a predetermined curvature or may be formed at a right angle. The planar shape of the display panel 100 is not limited to a square, and may be formed in other polygonal, circular, or oval shapes. The display panel 100 may be formed flat, but is not limited thereto. For example, the display panel 100 is formed at left and right ends and may include curved portions with a constant curvature or a changing curvature. In addition, the display panel 100 may be flexibly formed to be bent, curved, bent, folded, or rolled.

In the drawing, the first direction DR1 and the second direction DR2 are horizontal directions and intersect each other. For example, the first direction DR1 and the second direction DR2 may be perpendicular to each other. Additionally, the third direction DR3 intersects the first direction DR1 and the second direction DR2, for example, may be a vertical direction orthogonal to the first direction DR1 and the second direction DR2.

Each of the pixels PX may include a plurality of sub-pixels RP, GP, and BP, as shown in FIG. 3 . In FIG. 3, each of the pixels PX includes three sub-pixels (RP, GP, BP), that is, a first sub-pixel (BP), a second sub-pixel (RP), and a third sub-pixel (GP). Although this has been exemplified, the embodiments of the present specification are not limited thereto. Furthermore, in FIG. 3 , the sub-pixels BP, RP, and GP are illustrated as being arranged along the first direction DR1, but the order is not limited thereto and the order may be changed.

Each of the first sub-pixel (BP), the second sub-pixel (RP), and the third sub-pixel (GP) may have a rectangular, square, or diamond planar shape. For example, the first sub-pixel BP, the second sub-pixel RP, and the third sub-pixel GP each have a short side in the first direction DR1 and a short side in the second direction DR2, as shown in FIG. 3. It may have a rectangular plan shape with long sides.

In some embodiments, each of the first sub-pixel (BP), the second sub-pixel (RP), and the third sub-pixel (GP) has edges having the same length in the first direction (DR1) and the second direction (DR2). It may have a square or diamond planar shape including .

As shown in FIG. 3 , the first sub-pixel BP, the second sub-pixel RP, and the third sub-pixel GP may be arranged in the first direction DR1. Alternatively, one of the second sub-pixel RP and the third sub-pixel GP and the first sub-pixel BP are arranged in the first direction DR1, and the other one and the first sub-pixel BP are arranged in the first direction DR1. It may be arranged in the second direction DR2. For example, the first sub-pixel BP and the second sub-pixel RP are arranged in the first direction DR1, and the first sub-pixel BP and the third sub-pixel GP are arranged in the second direction ( DR2).

Alternatively, one of the first sub-pixel BP and the third sub-pixel GP and the second sub-pixel RP are arranged in the first direction DR1, and the other one and the second sub-pixel RP are arranged in the first direction DR1. It may be arranged in the second direction DR2. Alternatively, one of the first sub-pixel BP and the second sub-pixel RP and the third sub-pixel GP are arranged in the first direction DR1, and the other one and the third sub-pixel GP are arranged in the first direction DR1. It may be arranged in the second direction DR2.

The first sub-pixel BP may emit first light, the second sub-pixel RP may emit second light, and the third sub-pixel GP may emit third light. Here, the first light may be light in a blue wavelength band, the second light may be light in a red wavelength band, and the third light may be light in a green wavelength band. The red wavelength band is a wavelength band of approximately 600 nm to 750 nm, the green wavelength band is a wavelength band of approximately 480 nm to 560 nm, and the blue wavelength band may be a wavelength band of approximately 370 nm to 460 nm, but in the present specification The examples are not limited thereto.

Each of the first sub-pixel (BP), the second sub-pixel (RP), and the third sub-pixel (GP) is a light-emitting element that emits light, and is an organic light-emitting element containing an organic material and an inorganic light-emitting element containing an inorganic semiconductor. , a quantum dot light emitting device including a quantum dot light emitting layer, and a micro light emitting diode (micro LED). Hereinafter, the description focuses on the fact that the first sub-pixel (BP), the second sub-pixel (RP), and the third sub-pixel (GP) each include an organic light-emitting element, but the present invention is not limited thereto.

2 and 3, the area of the first sub-pixel (BP), the area of the second sub-pixel (RP), and the area of the third sub-pixel (GP) may be substantially the same, but in the embodiment of the present specification is not limited to this. At least one of the area of the first sub-pixel BP, the area of the second sub-pixel RP, and the area of the third sub-pixel GP may be different from the other one. Alternatively, among the area of the first sub-pixel (BP), the area of the second sub-pixel (RP), and the area of the third sub-pixel (GP), any two may be substantially the same and the other may be different from the above two. You can. Alternatively, the area of the first sub-pixel BP, the area of the second sub-pixel RP, and the area of the third sub-pixel GP may be different from each other.

The display panel 100 may include a main area and a sub area.

The main area (MA) may include a display area that displays an image and a non-display area that is a surrounding area of the display area. The display area may include display pixels that display images. The non-display area may be defined as an area from the outside of the display area to the edge of the display panel 100.

The sub-area SBA may protrude from one side of the main area MA in the first direction DR1. The length of the first direction DR1 of the sub-area SBA is smaller than the length of the first direction DR1 of the main area MA, and the length of the second direction DR2 of the sub-area SBA is smaller than the length of the first direction DR1 of the main area MA. It may be smaller than the length of the second direction DR2 in (MA), but is not limited thereto.

1A and 1B illustrate that the sub-area SBA is unfolded, but the sub-area SBA may be bent, and in this case, may be disposed on the lower surface of the display panel 100. When the sub-area SBA is bent, it may overlap the main area MA in the thickness direction, that is, in the third direction DR3. The display driving circuit 200 may be disposed in the sub-area SBA.

The display driving circuit 200 may generate signals and voltages for driving the display panel 100 . The display driving circuit 200 may be formed as an integrated circuit (IC) and attached to the display panel 100 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method. , but is not limited to this. For example, the display driving circuit 200 may be attached to the circuit board 300 using a chip on film (COF) method.

The circuit board 300 may be attached to one end of the sub-area (SBA) of the display panel 100 using an anisotropic conductive film. Because of this, the circuit board 300 may be electrically connected to the display panel 100 and the display driving circuit 200. The display panel 100 and the display driving circuit 200 can receive digital video data, timing signals, and driving voltages through the circuit board 300. The circuit board 300 may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film.

The light control layer (LCL) may be disposed on the display panel 100 . The light control layer (LCL) may be disposed in the display area of the main area (MA).

The light control layer LCL may include opening areas OA arranged in the first direction DR1 and the second direction DR2 and a non-opening area LSA surrounding the opening areas OA. The opening areas OA are areas that transmit light, extend along the third direction DR3, and may be areas that penetrate the light blocking film LS and the light transmissive film LT. Each of the opening areas OA may have a circular shape in plan as shown in FIGS. 1A and 1B, but is not limited thereto. Each of the opening areas OA may have an oval or polygonal shape in plan. The non-aperture area (LSA) may be the remaining area of the light control layer (LCL) excluding the opening area (OA). The opening areas OA are areas that overlap with the area where the second light transmitting part LTA2 is placed in the third direction DR3, and the non-opening areas LSA are the areas where the second light transmitting part LTA2 is not placed. This may mean an overlapping area in the third direction (DR3).

The light control layer (LCL) may include a light transmissive layer (LT) that transmits light emitted from the display panel 100 and a light blocking layer (LS) that blocks light emitted from the display panel 100 . The light transmissive film LT may include a first light transmissive part LTA1 disposed in the non-opening area LSA and second light transmissive parts LTA2 disposed in the open area OA. The light blocking film LS may be disposed in the non-aperture area LSA.

A description of the light control layer (LCL) will be provided later with reference to FIG. 6 and the like.

Figure 4 is a schematic diagram of a display device according to an embodiment applied to a vehicle.

Referring to FIG. 4 , the display device 10 according to an embodiment may be, for example, a display device applied to a vehicle. The vehicle may include a body that forms the exterior of the vehicle and an interior space defined by the body. The vehicle body may include a windshield (W) that protects the driver and passengers from the outside and provides a view to the driver. As shown in FIG. 4, the display device 10 may be provided in the indoor space.

In one embodiment, the display device 10 may be placed on a dashboard provided in the indoor space. For example, the display device 10 is placed on the dashboard in front of the driver's seat to provide speed information to the driver, is placed on the dashboard in front of the passenger seat to provide entertainment information to passengers, or is located in the center of the dashboard. It can be placed to provide map information, etc. FIG. 4 illustrates a display device 10 disposed on the dashboard in front of the driver's seat and a driver viewing a display screen of the display device 10 .

The driver can recognize (or recognize) the display screen of the display device 10 through the light L1 emitted from the display device 10 toward the driver. However, some of the light L2 among the light emitted from the display device 10 may be reflected on the surrounding windshield W and provided to the driver. In this case, the image displayed on the windshield (W) may interfere with the driver's driving. However, in the case of the display device 10 according to one embodiment, the viewing angle in the front direction (direction facing the driver) of the lights L1 and L2 emitted from the display device 10 is adjusted, especially the upper and lower viewing angle, It is possible to prevent some of the light L2 from being emitted from the display device 10 from being reflected on the surrounding windshield W and being provided to the driver.

Additionally, some of the light L2 among the light emitted from the display device 10 may be provided toward the passenger. In this case, the display device 10 may be vulnerable to privacy protection. However, in the case of the display device 10 according to one embodiment, by adjusting the viewing angle in the front direction (direction facing the driver) of the lights L1 and L2 emitted from the display device 10, especially the left and right viewing angles, It is possible to prevent images displayed on a vehicle display device placed in front of the driver from being provided to passengers.

The viewing angle can be adjusted through the light-transmitting film (LT) and the light-shielding film (LS). The viewing angle may be limited to a predetermined angle range through the light transmitting film (LT) and the light blocking film (LS). For example, when the normal is an imaginary line facing the driver and extending in a direction perpendicular to the display surface of the display device 10, the viewing angle may be an angle within 30° from the normal.

FIG. 5 is a cross-sectional view of the display panel taken along line I-I' of FIG. 1A.

Referring to FIG. 5 , the display panel 100 may include a display layer (DU) and a touch sensing layer (TSU) (eg, a touch layer).

The display layer DU includes a first substrate SUB1, a first buffer film BF1, a second substrate SUB2, a lower metal layer BML, a second buffer film BF2, a first thin film transistor ST1, First gate insulating layer GI1, first interlayer insulating layer 141, first capacitor electrode (CAE1), second interlayer insulating layer 142, first anode connection electrode (ANDE1), first organic layer 160, 2 It may include an anode connection electrode (ANDE2), a second organic layer 180, a light emitting device 170, a bank 190, and an encapsulation layer (TFE).

A first buffer film (BF1) is disposed on the first substrate (SUB1), a second substrate (SUB2) is disposed on the first buffer film (BF1), and a second buffer film (BF2) is disposed on the second substrate (SUB2). This can be placed.

Each of the first substrate (SUB1) and the second substrate (SUB2) may be made of an insulating material such as polymer resin. For example, the first substrate SUB1 and the second substrate SUB2 may include polyimide. Each of the first substrate SUB1 and the second substrate SUB2 may be a flexible substrate capable of bending, folding, rolling, etc.

The first buffer film BF1 and the second buffer film BF2 each protect the first thin film transistor ST1 and the light emitting layer 172 from moisture penetrating through the first substrate SUB1 and the second substrate SUB2, which are vulnerable to moisture permeation. ) is a membrane to protect the Each of the first buffer layer BF1 and the second buffer layer BF2 may be composed of a plurality of inorganic layers alternately stacked. For example, each of the first buffer layer BF1 and the second buffer layer BF2 includes one or more inorganic layers selected from the group consisting of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. It can be formed as a laminated multilayer.

The lower metal layer (BML) may be disposed on the second substrate (SUB2). The lower metal layer (BML) is connected to the first thin film transistor (ST1) in the third direction (DR3) to prevent leakage current from occurring when light is incident on the first active layer (ACT1) of the first thin film transistor (ST1). It may be disposed to overlap with the first active layer (ACT1). The lower metal layer (BML) is any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It can be formed as a single layer or multiple layers made of an alloy. The lower metal layer (BML) may be omitted.

The first active layer ACT1 of the first thin film transistor ST1 may be disposed on the second buffer film BF2. The first active layer ACT1 of the first thin film transistor ST1 includes polycrystalline silicon, single crystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The first active layer (ACT1) of the first thin film transistor (ST1) that is exposed and not covered by the first gate insulating layer (GI1) is doped with impurities or ions and may have conductivity. Therefore, the first source electrode S1 and the first drain electrode D1 of the first active layer ACT1 of the first thin film transistor ST1 can be formed.

A first gate insulating layer GI1 may be disposed on the first active layer ACT1 of the first thin film transistor ST1. Although FIG. 5 illustrates that the first gate insulating film GI1 is disposed between the first gate electrode G1 and the first active layer ACT1 of the first thin film transistor ST1, the present invention is not limited thereto. The first gate insulating layer GI1 may be disposed between the first interlayer insulating layer 141 and the first active layer ACT1 and between the first interlayer insulating layer 141 and the second buffer layer BF2. The first gate insulating layer GI1 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

The first gate electrode G1 of the first thin film transistor ST1 may be disposed on the first gate insulating film GI1. The first gate electrode G1 of the first thin film transistor ST1 may overlap the first active layer ACT1 in the third direction DR3. The first gate electrode (G1) of the first thin film transistor (ST1) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd). and copper (Cu) or an alloy thereof may be formed as a single layer or multiple layers.

A first interlayer insulating film 141 may be disposed on the first gate electrode (G1) of the first thin film transistor (ST1). The first interlayer insulating layer 141 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating layer 141 may include a plurality of inorganic layers.

A first capacitor electrode CAE1 may be disposed on the first interlayer insulating film 141. The first capacitor electrode CAE1 may overlap the first gate electrode G1 of the first thin film transistor ST1 in the third direction (Z-axis direction). Since the first interlayer insulating film 141 has a predetermined dielectric constant, a capacitor will be formed by the first capacitor electrode CAE1, the first gate electrode G1, and the first interlayer insulating film 141 disposed between them. You can. The first capacitor electrode (CAE1) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

A second interlayer insulating film 142 may be disposed on the first capacitor electrode CAE1. The second interlayer insulating layer 142 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating layer 142 may include a plurality of inorganic layers.

A first anode connection electrode ANDE1 may be disposed on the second interlayer insulating film 142. The first anode connection electrode ANDE1 is a first anode contact that penetrates the first interlayer insulating film 141 and the second interlayer insulating film 142 to expose the first drain electrode D1 of the first thin film transistor ST1. It may be connected to the first drain electrode (D) of the first thin film transistor (ST1) through the hole (ANCT1). The first anode connection electrode (ANDE1) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of one or an alloy thereof.

A first organic layer 160 for planarization may be disposed on the first anode connection electrode ANDE1. The first organic layer 160 is formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. It can be.

A second anode connection electrode ANDE2 may be disposed on the first organic layer 160. The second anode connection electrode ANDE2 is connected to the second anode connection electrode ANDE2 through the second anode contact hole ANCT2 that penetrates the first organic layer 160 and exposes the first anode connection electrode ANDE1. You can. The second anode connection electrode (ANDE2) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of one or an alloy thereof.

A second organic layer 180 may be disposed on the second anode connection electrode ANDE2. The second organic layer 180 is formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. It can be.

In Figure 5, the first thin film transistor (ST1) is exemplified by being formed in a top gate (top gate) method in which the first gate electrode (G1) is located on top of the first active layer (ACT1), but it is not limited to this. No. The first thin film transistor (ST1) is a bottom gate type in which the first gate electrode (G1) is located below the first active layer (ACT1) or a bottom gate type in which the first gate electrode (G1) is located below the first active layer (ACT1). It can be formed as a double gate located at both the top and bottom of the layer (ACT1).

Light-emitting devices 170 and a bank 190 may be disposed on the second organic layer 180. For example, the light emitting devices 170 and the bank 190 may form a light emitting device layer. Each of the light emitting elements 170 may include a first light emitting electrode 171, a light emitting layer 172, and a second light emitting electrode 173.

The first light emitting electrode 171 may be formed on the second organic layer 180. The first light emitting electrode 171 may be connected to the second anode connection electrode (ANDE2) through the third anode contact hole (ANCT3) that penetrates the second organic layer 180 and exposes the second anode connection electrode (ANDE2). there is.

The first light emitting electrode 171 may be formed on the second organic layer 180. The first light emitting electrode 171 may be connected to the second anode connection electrode (ANDE2) through the third anode contact hole (ANCT3) that penetrates the second organic layer 180 and exposes the second anode connection electrode (ANDE2). there is.

In a top emission structure that emits light in the direction of the second light emitting electrode 173 based on the light emitting layer 172, the first light emitting electrode 171 has a stacked structure of aluminum and titanium (Ti/Al/Ti), aluminum and titanium. It can be formed of a highly reflective metal material, such as a laminated structure of ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO). APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The bank 190 may be formed to partition the first light emitting electrode 171 on the second organic layer 180 to define the light emitting area EA. The bank 190 may be formed to cover the edge of the first light emitting electrode 171. The bank 190 may be formed of an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. .

The light-emitting area EA is formed by sequentially stacking the first light-emitting electrode 171, the light-emitting layer 172, and the second light-emitting electrode 173, thereby generating holes from the first light-emitting electrode 171 and the second light-emitting electrode 173. It represents a region where electrons from the light emitting layer 172 combine with each other to emit light.

A light emitting layer 172 is formed on the first light emitting electrode 171 and the bank 190. The light emitting layer 172 may contain an organic material and emit light of a predetermined color. For example, the light emitting layer 172 may include a hole transporting layer, an organic material layer, and an electron transporting layer.

The second light emitting electrode 173 may be disposed on the light emitting layer 172. The second light emitting electrode 173 may be formed to cover the light emitting layer 172. The second light emitting electrode 173 may be a common layer commonly formed in all light emitting areas EA. Although not shown, in some embodiments, a capping layer may be formed on the second light emitting electrode 173.

In the upper light-emitting structure, the second light-emitting electrode 173 is made of transparent conductive oxide (TCO) such as induim tin oxide (ITO) and induim zinc oxide (IZO), which can transmit light, or magnesium (Mg), It may be formed of a semi-transmissive conductive material such as silver (Ag) or an alloy of magnesium (Mg) and silver (Ag). When the second light emitting electrode 173 is formed of a translucent metal material, light output efficiency can be increased due to a micro cavity.

An encapsulation layer (TFE) may be disposed on the second light emitting electrode 173. The encapsulation layer (TFE) includes at least one inorganic film to prevent oxygen or moisture from penetrating into the light emitting device layer. Additionally, the encapsulation layer (TFE) includes at least one organic layer to protect the light emitting device layer from foreign substances such as dust. For example, the encapsulation layer (TFE) includes a first inorganic layer (TFE1), an organic layer (TFE2), and a second inorganic layer (TFE3).

The first inorganic layer (TFE1) is disposed on the second light emitting electrode 173, the organic layer (TFE2) is disposed on the first inorganic layer (TFE1), and the second inorganic layer (TFE3) is disposed on the organic layer (TFE2). ) can be placed on. The first inorganic layer (TFE1) and the second inorganic layer (TFE3) are multilayers in which one or more inorganic layers of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately laminated. can be formed. The organic layer (TFE2) may be a monomer.

The touch sensing layer (TSU) may be disposed on the encapsulation layer (TFE). The touch sensing layer (TSU) may include a plurality of touch electrodes for detecting a user's touch in a capacitive manner, and touch lines connecting the plurality of touch electrodes and the touch driver. For example, the touch sensing layer (TSU) can sense the user's touch using a mutual capacitance method or a self-capacitance method.

In another embodiment, the touch sensing layer (TSU) may be disposed on a separate substrate disposed on the display layer (DU). In this case, the substrate supporting the touch sensing layer (TSU) may be a base member that seals the display layer (DU).

A plurality of touch electrodes of the touch sensing layer (TSU) may be disposed in a touch sensor area that overlaps the display area. The touch lines of the touch sensing layer (TSU) may be arranged in a touch peripheral area that overlaps the non-display area.

The touch sensing layer (TSU) includes a first touch insulating layer (SIL1), a first touch electrode (REL), a second touch insulating layer (SIL2), a second touch electrode (TEL), and a third touch insulating layer (SIL3). may include.

The first touch insulating layer SIL1 may be disposed on the encapsulation layer TFE. The first touch insulating layer SIL1 may have insulating and optical functions. The first touch insulating layer SIL1 may include at least one inorganic layer. For example, the second touch insulating layer SIL2 may be an inorganic layer including at least one of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. Optionally, the first touch insulating layer SIL1 may be omitted.

The first touch electrode REL may be disposed on the first touch insulating layer SIL1. The first touch electrode REL may not overlap the light emitting device 170. The first touch electrode (REL) is formed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), and ITO (Indium Tin Oxide), or a laminated structure of aluminum and titanium (Ti/ Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO).

In one embodiment, the first touch electrode REL may overlap the non-opening area LSA in the third direction DR3 as shown in FIG. 5 . The first touch electrode REL may not overlap the opening area OA in the third direction DR3. That is, the first touch electrode REL may overlap with the first light transmitting portion LTA1 and the light blocking film LS in the third direction DR3 and may not overlap with the second light transmitting portions LTA2.

The second touch insulating layer SIL2 may cover the first touch electrode REL and the first touch insulating layer SIL1. The second touch insulating layer SIL2 may have insulating and optical functions. For example, the second touch insulating layer SIL2 may be made of the material illustrated in the first touch insulating layer SIL1.

The second touch electrode TEL may be disposed on the second touch insulating layer SIL2. The second touch electrode TEL may not overlap the light emitting device 170. The second touch electrode (TEL) is formed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), and ITO (Indium Tin Oxide), or has a laminated structure of aluminum and titanium (Ti/ Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO).

In one embodiment, the second touch electrode TEL may overlap the non-opening area LSA in the third direction DR3 as shown in FIG. 5 . The second touch electrode TEL may not overlap the opening area OA in the third direction DR3. That is, the second touch electrode TEL may overlap the first light transmissive part LTA1 and the light blocking film LS in the third direction DR3, and may not overlap the second light transmissive parts LTA2.

The third touch insulating layer SIL3 may cover the second touch electrode TEL and the second touch insulating layer SIL2. The third touch insulating layer SIL3 may have insulating and optical functions. The third touch insulating layer SIL3 may be made of the material illustrated in the second touch insulating layer SIL2.

The touch sensing layer (TSU) may further include a planarization layer (PAS) for planarization. The planarization layer (PAS) can be formed of an organic film such as acryl resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is.

FIG. 6 is a cross-sectional view of the display panel and the light control layer taken along line I-I' of FIG. 1A. Figure 7 is a cross-sectional view of a light control layer according to one embodiment.

Referring to FIGS. 6 and 7 along with FIGS. 1A and 1B , the light control layer (LCL) may be disposed on the display panel 100 . The light control layer (LCL) can control the viewing angle of light emitted from the display panel 100. For example, when light emitted from the display panel 100 travels at a predetermined angle or less with respect to the third direction DR3, the light may be emitted to the outside. On the other hand, when the light emitted from the display panel 100 travels beyond a predetermined angle with respect to the third direction DR3, it may be absorbed by the light blocking film LS and may not be emitted to the outside.

The light control layer (LCL) may include a light transmissive layer (LT) and a light blocking layer (LS).

The light-shielding film LS may be spaced apart from the display panel 100 and disposed on the first light-transmitting portion LTA1 of the light-transmitting film LT. The lower surface of the light blocking film LS may directly contact the upper surface of the first light transmitting part LTA1. In one embodiment, the area of the lower surface of the light blocking film LS may be the same as the area of the upper surface of the first light transmitting part LTA1, but is not limited thereto.

The light blocking film LS may be disposed in the non-aperture area LSA. The light blocking film LS may include a plurality of openings disposed in the opening area OA. The light blocking film LS may surround at least a portion of the second light transmitting portion LTA2 disposed within the opening of the opening area OA.

The light blocking film LS may absorb or block light emitted from the display panel 100. The light blocking film LS may include a light blocking organic material. For example, the light shielding film LS is a photosensitive resin capable of absorbing or blocking light, and may include an organic material including an organic black pigment such as carbon black.

In some embodiments, the light blocking film LS may overlap the plurality of touch electrodes REL and TEL in the third direction DR3. By arranging the light blocking film LS and the plurality of touch electrodes REL and TEL so as not to overlap the light emitting area EA, the luminance and display quality of the display device 10 can be improved.

A light transmissive layer LT may be disposed on the display panel 100 . The light transmissive layer LT may include a first light transmissive part LTA1 and a plurality of second light transmissive parts LTA2. The light-transmitting film LT may be disposed in the non-opening area LSA and the opening area OA below the light-shielding film LS. For example, the first light transmitting portion LTA1 of the light transmitting layer LT may be disposed in the non-opening area LSA below the light blocking layer LS, and the plurality of second light transmitting portions of the light transmitting layer LT may be disposed in the non-opening area LSA. Transmissive parts LTA2 may be disposed in the opening area OA.

The light transmissive layer LT may transmit light emitted from the display panel 100. The light transmissive layer (LT) may include a transparent organic material. For example, the light transmitting film (LT) is made of organic materials such as acryl resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. It may include a membrane. In another embodiment, the light transmissive layer LT may be formed of a silicon oxy nitride layer or a silicon oxide layer. The refractive index of the light transmissive layer (LT) may be 1.1 to 1.6.

The first light transmitting part LTA1 may be disposed between the display panel 100 and the light blocking film LS. The upper surface of the first light transmitting part LTA1 may directly contact the lower surface of the light blocking film LS. In one embodiment, the area of the upper surface of the first light transmitting part LTA1 may be the same as the area of the lower surface of the light blocking film LS, but is not limited thereto.

The first light transmitting part LTA1 may be disposed in the non-aperture area LSA. The first light transmitting portion LTA1 may include a plurality of openings disposed in the opening area OA. The first light transmissive part LTA1 may surround at least a portion of the plurality of second light transmissive parts LTA2 disposed in the opening.

The thickness LS_H of the light blocking film LS may be greater than the thickness LTA1_H of the first light transmitting part LTA1. For example, the thickness LS_H of the light blocking film LS may be 10 μm to 25 μm, and the thickness LTA1_H of the first light transmitting portion LTA1 may be 2 μm to 8 μm.

A plurality of second light transmitting parts LTA2 may be disposed on the display panel 100 . The plurality of second light transmitting parts LTA2 may directly contact the display panel 100 . The plurality of second light transmitting parts LTA2 may be disposed inside the opening formed in the light blocking film LS and inside the opening formed in the first light transmitting part LTA1. Side surfaces of the plurality of second light transmitting parts LTA2 may contact the inner wall of the opening formed in the light blocking film LS and the inner wall of the opening formed in the first light transmitting part LTA1. The plurality of second light transmissive films LTA2 may have a polygonal pillar shape, such as a cylinder, an elliptical pillar, or a square pillar.

The plurality of second light transmitting parts LTA2 may be arranged to be spaced apart from each other. In some embodiments, the plurality of second light transmitting units LTA2 may be arranged at regular intervals along the first direction DR1 and the second direction DR2, that is, along the matrix direction. That is, among the plurality of second light transmitting parts LTA2, the distance between any two neighboring second light transmitting parts LTA2 along the first direction DR1 and the second direction DR2 may be the same. It is not limited to this.

The first distance D1, which is the distance between the plurality of second light transmissive parts LTA2 in the first direction DR1 and the second direction DR2, is disposed between the plurality of second light transmissive parts LTA2. The width (LS_W) of the light shielding film (LS) may be equal to the width (LTA1_W) of the first light transmitting portion (LTA1) disposed between the plurality of second light transmitting portions (LTA2). In one embodiment, the first distance may be approximately 1 μm to 4 μm.

The first width W1, which is the width LTA2_W of the plurality of second light transmitting parts LTA2, may be greater than the first distance D1. In one embodiment, the first width W1 may be approximately 6 μm to 9 μm.

The thickness (LTA2_H) of the plurality of second light transmitting parts (LTA2) may be equal to the sum of the thickness (LS_H) of the light blocking film (LS) and the thickness (LTA1_H) of the first light transmitting part (LTA1). In one embodiment, the thickness (LTA2_H) of the plurality of second light transmitting portions (LTA2) may be approximately 10 μm to 35 μm.

In some embodiments, the ratio of the first distance D1 to the first width W1 is the ratio of the thickness LTA1_H of the first light transmitting portion LTA1 to the thickness LS_H of the light blocking film LS and may be the same. For example, the ratio of the first distance D1 to the first width W1 and the ratio of the thickness LTA1_H of the first light transmitting portion LTA1 to the thickness LS_H of the light blocking film LS are 1:9. It may be 2:3. If the ratio is greater than 1:9, the thickness of the light control layer (LCL) becomes thick, thereby preventing the display device 10 from becoming thick. In addition, in the display device manufacturing method (S1, S2) (see FIGS. 16 and 22) described later, the opening of the light shielding film (LS) where the second light transmitting portion (LTA2) is disposed and the opening of the first light transmitting portion (LTA1) are dry type. It can be formed by dry etching. At this time, when the ratio is designed to be greater than 1:9, a bowing profile can be prevented from being formed and a vertical profile can be achieved. Meanwhile, when the ratio is less than 2:3, the required viewing angle can be achieved.

Meanwhile, as shown in FIGS. 6 and 7, the first light LGT1 emitted from the display panel 100 is the interface where the light control layer LCL and the outside (e.g., air) meet, that is, the light control layer. It may be incident on the upper surface of (LCL) at a first incident angle (θ1a). The first light LGT1 may be refracted and emitted from the interface at a first refraction angle θ1b.

As shown in FIG. 7, the second light LGT2, which is different from the first light LGT1 and is emitted from the display panel 100, is an interface where the light control layer LCL and the outside (e.g., air) meet, That is, it may be incident on the upper surface of the light control layer (LCL) at the second incident angle (θ1c). The second light LGT2 may be refracted and emitted from the interface at a second refraction angle θ1d.

The refraction angle θ1b of the first light LGT1 may be greater than the refraction angle θ1d of the second light LGT2. The refraction angle θ1b of the first light LGT1 may be the maximum viewing angle of the display device 10 .

The first light LGT1 may travel in a straight line and pass through the first point P1, the second point P2, and the third point P3. The first point (P1), the second point (P2), and the third point (P3) may be located on a straight line.

On the cross section shown in FIGS. 6 and 7, the first point P1 is the interface where one side of the second light transmitting portion LTA2 and the side of the first light transmitting portion LTA1 come into contact with the second light transmitting portion LTA2. ) may be a point that meets the lower surface. The second point P2 is an interface where the lower surface of the light shielding film LS and the upper surface of the first light transmitting part LTA1 come into contact with the second light transmitting part LTA2 including the first point P1. 2 It may be a point that meets the other side of the light transmitting portion (LTA2). The third point P3 is an interface where the side surface of the light shielding film LS and one side of the second light transmitting portion LTA2 including the second point P2 come into contact with each other. 2 It may be a point that meets the upper surface of the light transmitting part (LTA2).

A first triangle can be created by the first point (P1), the third point (P3), and the first vertex (Q1). A second triangle can be created by the first point (P1), the second point (P2), and the second vertex (Q2). The first vertex (Q1) is an interface where one side of the second light transmitting portion (LTA2) including the second point (P2) contacts the side surface of the first light transmitting portion (LTA1), and the second point (P2) includes the first vertex (Q1). It may be a point that meets the lower surface of the second light transmitting portion (LTA2). The second vertex Q2 is an interface where the other side of the second light transmitting portion LTA2 including the second point P2 comes into contact with the first light transmitting portion LTA1. 2 This may be the point where it meets the lower surface of the light transmitting portion (LTA2).

According to the law of similarity ratio between the first triangle and the second triangle, the ratio of the first distance (D1) to the first width (W1) is the ratio of the first light transmitting portion (LTA1) to the thickness (LS_H) of the light shielding film (LS) It may be the same as the ratio of the thickness (LTA1_H).

In the display device manufacturing method (S1, S2) (see FIGS. 16 and 22) described later, the opening of the light shielding film (LS) where the second light transmitting portion (LTA2) is disposed and the opening of the first light transmitting portion (LTA1) are dry etched. It can be formed by dry etching. At this time, if the thickness (LS_H) of the light shielding film (LS) and the thickness (LTA1_H) of the first light transmitting portion (LTA1) are designed to be large, not only does the etching time take a long time, but also the profile of the opening is vertically distorted during the etching process. Rather than being formed, it may be formed as a bowing profile. In this case, a problem may occur in which optical characteristics vary depending on the position of the light control layer (LCL). On the other hand, if the thickness (LS_H) of the light shielding film (LS) and the thickness (LTA1_H) of the first light transmitting portion (LTA1) are designed to be small, the required viewing angle cannot be achieved.

Meanwhile, even when the first width W1, which is the width of the opening of the light shielding film LS and the width of the opening of the first light transmitting part LTA1, that is, the width LTA2_W of the second light transmitting part LTA2, is designed to be narrow, During the etching process, the profile of the opening may not be formed vertically, but may be formed as a bowing profile. In this case, a problem in which optical characteristics vary depending on the position of the light control layer (LCL) may similarly occur. Additionally, the width of the opening area (OA) may become narrow, which may cause problems with decreased transmittance and luminance. On the other hand, even when the first width W1, which is the width of the opening of the light shielding film LS and the width of the opening of the first light transmitting part LTA1, that is, the width LTA2_W of the second light transmitting part LTA2, is designed to be wide, The required viewing angle cannot be achieved.

The display device 10 according to this embodiment is configured to determine the ratio of the thickness (LTA1_H) of the first light transmitting portion (LTA1) to the thickness (LS_H) of the light shielding film (LS) to the first width (W1). By making it the same as the ratio of the distance D1, the viewing angle can be minimized and the optical characteristics of the light control layer (LCL) can be equalized.

In addition, according to the display device 10 according to the present embodiment, the light-shielding film LS is not disposed within the opening of the transmissive film, but the second light-transmitting portion LTA2 is disposed within the opening of the previously formed light-shielding film LS, which will be described later. In the display device manufacturing methods S1 and S2 (see FIGS. 16 and 22), a process of removing the light-shielding film LS, which may be formed higher than the light-transmitting film LT, may not be performed. Accordingly, process efficiency is improved, and damage to the light-transmitting film LT that occurs during the process of removing the light-shielding film LS can be prevented.

Hereinafter, other embodiments of the display device according to one embodiment will be described. In the following embodiments, the same components as the previously described embodiments will be referred to by the same reference numerals, redundant descriptions will be omitted or simplified, and differences will be mainly explained.

Figure 8 is a cross-sectional view of a light control layer according to another embodiment.

Referring to FIG. 8, the display device 10 according to the present embodiment is similar to the embodiment described with reference to FIG. 7 in that the light transmissive film LT further includes a third light transmissive portion LTA3. It is different from the display device 10 according to the present invention.

More specifically, the light transmissive film LT of the display device 10 according to another embodiment may further include a third light transmissive part LTA3.

The third light transmitting part LTA3 may be disposed on the light blocking film LS. The third light transmitting part LTA3 may overlap the light blocking film LS in the third direction DR3. The lower surface of the third light transmitting portion (LTA3) may directly contact the upper surface of the light blocking film (LS). In one embodiment, the area of the lower surface of the third light transmitting part LTA3 may be the same as the area of the upper surface of the light blocking film LS, but is not limited thereto.

The third light transmitting part LTA3 may be disposed in the non-aperture area LSA. The third light transmitting portion LTA3 may include a plurality of openings disposed in the opening area OA. The third light transmissive part LTA3 may surround at least a portion of the second light transmissive part LTA2 disposed within the opening of the opening area OA.

The third light transmitting portion LTA3 may transmit light emitted from the display panel 100. The third light transmitting part LTA3 may include a transparent organic material. The third light transmissive part LTA3 may be formed of a different material from the first light transmissive part LTA1 and the second light transmissive part LTA2. The third light transmitting portion (LTA3) may be an organic layer or an inorganic layer. For example, when the third light transmissive part LTA3 is an organic layer, the third light transmissive part LTA3 may be a photoresist. When the third light transmitting portion (LTA3) is an inorganic layer, it may be a transparent conductive oxide (TCO). For example, if the third light transmitting part LTA3 is an inorganic film, it may be induim tin oxide (ITO) or induim zinc oxide (IZO).

The refractive index of the third light transmissive part LTA3 may be substantially the same as that of the first light transmissive part LTA1 and the second light transmissive part LTA2. For example, the refractive index of the third light transmitting part LTA3 may be 1.1 to 1.6. Accordingly, the light passing through the third light transmitting part LTA3 is not refracted and may enter and exit at the same angle as that in the second light transmitting part LTA2.

The thickness (LTA3_H) of the third light transmissive part (LTA3) may be smaller than the thickness of the first light transmissive part (LTA1). For example, the thickness (LTA3_H) of the third light transmitting portion (LTA3) may be hundreds of nanometers to several micrometers. The thickness (LTA2_H) of the second light transmitting portion (LTA2) is the same as the thickness (LTA1_H) of the first light transmitting portion (LTA1), the thickness (LS_H) of the light shielding film (LS), and the thickness (LTA3_H) of the third light transmitting portion (LTA3). It may be equal to the sum.

The width (LTA3_W) of the third light transmitting portion (LTA3) disposed between the second light transmitting portions (LTA2) is the first distance (D1), which is the distance between the second light transmitting portions (LTA2), and the second light transmitting portion ( The width (LTA1_W) of the first light transmitting part (LTA1) disposed between the LTA2) may be equal to the width (LS_W) of the light blocking film (LS) disposed between the second light transmitting portions (LTA2). In one embodiment, the width (LTA3_W) of the third light transmitting portion (LTA3) disposed between the second light transmitting portions (LTA2) may be 1 μm to 4 μm.

The display device 10 according to the present embodiment is manufactured by using the display device manufacturing method S1 and S2 (see FIGS. 16 and 22) to be described later by using the opening and the second light-shielding film LS where the second light transmitting portion LTA2 is disposed. 1 The opening of the light transmitting portion LTA1 may be formed by dry etching. The third light transmitting part LTA3 may be identical to the mask pattern MS used in the etching process. According to the display device 10 according to the present embodiment, process efficiency can be increased by leaving the mask pattern MS (see FIGS. 18 and 24) used in the etching process without removing it.

Figure 9 is a cross-sectional view of a light control layer according to another embodiment.

Referring to FIG. 9 , the display device 10 according to the present embodiment is different from the display device 10 according to the embodiment described with reference to FIG. 7 in that it further includes a light blocking pattern (LSM). .

More specifically, the light control layer (LCL) of the display device 10 according to another embodiment may further include a light blocking pattern (LSM).

A light blocking pattern (LSM) may be disposed on the display panel 100 . The light blocking pattern (LSM) may directly contact the display panel 100. The light blocking pattern (LSM) may be located on the opposite side of the light blocking film (LS) with the first light transmitting part (LTA1) interposed therebetween. The upper surface of the light blocking pattern (LSM) may directly contact the lower surface of the first light transmitting part (LTA1). In one embodiment, the area of the upper surface of the light blocking pattern (LSM) may be the same as the area of the lower surface of the first light transmitting part (LTA1), but is not limited thereto.

The light blocking pattern (LSM) may be disposed in the non-aperture area (LSA). The light blocking pattern LSM may include a plurality of openings disposed in the opening area OA. The light blocking pattern LSM may surround at least a portion of the second light transmitting portion LTA2 disposed within the opening of the opening area OA.

The light blocking pattern (LSM) may absorb or block light emitted from the display panel 100. The light blocking pattern (LSM) is a metal pattern and may include a light blocking metal material. For example, the light blocking pattern (LSM) may be a single layer or a multilayer including at least one of Mo, Al, Ti, W, Ag, Cu, and Au.

The thickness (LSM_H) of the light blocking pattern (LSM) may be smaller than the thickness of the first light transmitting portion (LTA1). For example, the thickness (LSM_H) of the light blocking pattern (LSM) may be hundreds of nanometers to several micrometers. The thickness (LTA2_H) of the second light transmitting portion (LTA2) is the sum of the thickness (LTA1_H) of the first light transmitting portion (LTA1), the thickness (LS_H) of the light blocking film (LS), and the thickness (LSM_H) of the light blocking pattern (LSM) may be the same.

The width (LSM_W) of the light blocking pattern (LSM) disposed between the second light transmitting portions (LTA2) is the first distance (D1), which is the distance between the second light transmitting portions (LTA2), and the second light transmitting portion (LTA2). The width (LTA1_W) of the first light transmitting portion (LTA1) disposed between the light transmitting portions (LTA2) may be equal to the width (LS_W) of the light blocking film (LS) disposed between the second light transmitting portions (LTA2). In one embodiment, the width (LSM_W) of the light blocking pattern (LSM) disposed between the second light transmitting portions (LTA2) may be 1 μm to 4 μm.

According to the display device 10 according to this embodiment, the viewing angle can be further reduced by additionally disposing the light blocking pattern (LSM) below the first light transmitting portion (LTA1).

Figure 10 is a cross-sectional view of a light control layer according to another embodiment.

Referring to FIG. 10, the display device 10 according to the present embodiment according to the embodiment described with reference to FIG. 7, etc., in that the light shielding film LS is located lower than the first light transmitting portion LTA1. It is different from the display device 10.

More specifically, the light blocking film LS may be disposed on the display panel 100 . The light blocking film LS may be disposed between the display panel 100 and the first light transmitting part LTA1. The lower surface of the light blocking film LS may be in direct contact with the display panel 100. The upper surface of the light blocking film LS may directly contact the lower surface of the first light transmitting part LTA1. In one embodiment, the area of the upper surface of the light blocking film LS may be the same as the area of the lower surface of the first light transmitting part LTA1, but is not limited thereto.

The first light transmitting part LTA1 may be disposed on the light blocking film LS. The first light transmitting part LTA1 may be located on the opposite side of the display panel 100 with the light blocking film LS interposed therebetween. The lower surface of the first light transmitting portion (LTA1) may directly contact the upper surface of the light blocking film (LS). In one embodiment, the area of the lower surface of the first light transmitting part LTA1 may be the same as the area of the upper surface of the light blocking film LS, but is not limited thereto.

The first light LGT1 may travel in a straight line and pass through the first point P1, the second point P2, and the third point P3. The first point (P1), the second point (P2), and the third point (P3) may be located on a straight line.

On the cross section shown in FIG. 10, the first point P1 is as long as the interface where the other side of the second light transmissive part LTA2 and the side surface of the light shielding film LS meet the lower surface of the second light transmissive part LTA2. It could be a dot. The second point P2 is an interface where the upper surface of the light shielding film LS and the lower surface of the first light transmissive part LTA1 meet one side of the second light transmissive part LTA2 including the first point P1. It could be one point. The third point P3 is a contact between the side surface of the first light transmissive part LTA1 and the other side of the second light transmissive part LTA2 adjacent to the second light transmissive part LTA2 including the second point P2. The interface may be a point where the second light transmitting portion LTA2 including the second point P2 meets the upper surface of the neighboring second light transmitting portion LTA2.

A first triangle can be created by the first point (P1), the third point (P3), and the first vertex (Q1). A second triangle can be created by the first point (P1), the second point (P2), and the second vertex (Q2). The first vertex Q1 is an interface where the second light transmitting portion LTA2 including the second point P2 and the other side of the neighboring second light transmitting portion LTA2 come into contact with the side of the light shielding film LS. The second point P2 may be a point where the included second light transmissive part LTA2 meets the lower surface of the neighboring second light transmissive part LTA2. The second vertex Q2 is an interface where one side of the second light transmitting portion LTA2 including the second point P2 comes into contact with the light shielding film LS. It may be the point where it meets the lower surface of (LTA2).

According to the law of similarity ratio between the first triangle and the second triangle, the ratio of the first distance (D1) to the first width (W1) is the ratio of the first light transmitting portion (LTA1) to the thickness (LS_H) of the light shielding film (LS) It may be the same as the ratio of the thickness (LTA1_H).

11 is a cross-sectional view of a display panel and a light control layer according to another embodiment.

Referring to FIG. 11, in the display device 10 according to the present embodiment, the first light transmitting portion (LTA1) does not include an opening, and the second light transmitting portion (LTA2) is on the first light transmitting portion (LTA1). In that it is located, it is different from the display device 10 according to an embodiment described with reference to FIG. 6 and the like.

More specifically, the first light transmitting part LTA1 may not include an opening in the opening area OA. That is, the first light transmitting portion LTA1 may be disposed throughout the non-opening area LSA and the opening area OA.

The upper surface of the first light transmitting part LTA1 may directly contact the lower surface of the light blocking film LS. However, unlike the embodiment described with reference to FIG. 6, etc., in this embodiment, the first light transmitting part LTA1 does not include an opening, so the area of the upper surface of the first light transmitting part LTA1 is that of the light blocking film LS. It may be larger than the area of the lower surface.

Since the first light transmitting part LTA1 does not include an opening disposed in the opening area OA, unlike the embodiment described with reference to FIG. 6, etc., in this embodiment, the first light transmitting part LTA1 transmits the second light. It may not surround the side of the transparent portion (LTA2). That is, the first light transmitting portion (LTA1) can only directly contact the lower surface of the second light transmitting portion (LTA2).

A plurality of second light transmissive parts LTA2 may be disposed on the first light transmissive part LTA1. The plurality of second light transmissive parts LTA2 may not be in direct contact with the display panel 100, but may be located on the opposite side of the display panel 100 with the first light transmissive part LTA1 interposed therebetween.

The plurality of second light transmitting parts LTA2 may be disposed inside the opening formed in the light blocking film LS. Side surfaces of the plurality of second light transmitting parts LTA2 may contact the inner wall of the opening formed in the light blocking film LS. The plurality of second light transmitting parts LTA2 may overlap the light blocking film LS and may not overlap the first light transmitting part LTA1 in the first direction DR1 and the second direction DR2.

The thickness (LTA2_H) of the plurality of second light transmitting portions (LTA2) may be equal to the thickness (LS_H) of the light blocking film (LS). In one embodiment, the thickness (LTA2_H) of the plurality of second light transmitting parts (LTA2) may be 10 μm to 25 μm.

In the display device 10 according to this embodiment, in the etching process of the display device manufacturing method S2 (see FIG. 22) described later, the first light transmitting portion LTA1 is not etched, but only the light blocking film LS is etched. It can be manufactured by doing. Accordingly, since only the light shielding film LS is etched, process efficiency can be increased and the etch depth can be reduced to achieve a vertical profile.

Figure 12 is a perspective view of a display device according to another embodiment. Figure 13 is a perspective view showing the fingerprint sensor of Figure 12. Figure 14 is a cross-sectional view taken along line II-II' of Figure 13. FIG. 15 is a cross-sectional view showing the fingerprint sensor of FIG. 14 in more detail.

12 to 15, the display device 10 according to the present embodiment includes a fingerprint sensor 400 including a light control layer (LCL), an embodiment described with reference to FIG. 1A, etc. It is different from the display device 10 according to the example.

More specifically, the display device 10 according to this embodiment may include a display panel 100, a display driving circuit 200, a circuit board 300, and a fingerprint sensor 400.

The display panel 100 may include a main area (MA) and a sub area (SBA). The main area (MA) may include a display area (DA) that displays an image and a non-display area (NDA) that is a surrounding area of the display area (DA). The display area DA may include display pixels that display images. The non-display area NDA may be defined as an area from the outside of the display area DA to the edge of the display panel 100.

The display area (DA) may include a fingerprint detection area (FSA). The fingerprint detection area (FSA) refers to the area where the fingerprint sensor 400 is placed. The fingerprint detection area (FSA) may be a partial area of the display area (DA) as shown in FIG. 12, but is not limited thereto. The fingerprint detection area (FSA) is the entire area of the display area (DA) and may be substantially the same as the display area (DA).

The sub-area SBA may protrude from one side of the main area MA in the first direction DR1. The length of the first direction DR1 of the sub-area SBA is smaller than the length of the first direction DR1 of the main area MA, and the length of the second direction DR2 of the sub-area SBA is smaller than the length of the first direction DR1 of the main area MA. It may be smaller than the length of the second direction DR2 in (MA), but is not limited thereto.

Although FIG. 12 illustrates that the sub-area SBA is unfolded, the sub-area SBA may be bent, and in this case, may be disposed on the lower surface of the display panel 100. When the sub-area SBA is bent, it may overlap the main area MA in the thickness direction of the substrate SUB, that is, in the third direction DR3. The display driving circuit 200 may be disposed in the sub-area SBA.

The description of the display driving circuit 200 and the circuit board 300 is the same as the embodiment described with reference to FIG. 1A and so will be omitted.

The fingerprint sensor 400 may be disposed on the lower surface of the display panel 100. The fingerprint sensor 400 may be attached to the lower surface of the display panel 100 using a transparent adhesive member. For example, the transparent adhesive member may be a transparent adhesive film such as an optically clear adhesive (OCA) film or a transparent adhesive resin such as an optically clear resin (OCR).

The fingerprint sensor 400 may include a fingerprint sensing layer 410 and a light control layer (LCL).

The fingerprint sensing layer 410 may include sensor pixels arranged in the first direction DR1 and the second direction DR2. Each of the sensor pixels may include a photo-sensing element through which a sensing current flows according to incident light, at least one transistor connected to the photo-sensing element, and at least one capacitor connected to the photo-sensing element or transistor. The light sensing element may be a photo diode or a photo transistor.

A light control layer (LCL) may be disposed on the fingerprint sensing layer 410 . The description of the light control layer (LCL) is the same as the embodiment described with reference to FIG. 1A and so will be omitted.

The fingerprint circuit board 500 may be disposed on the fingerprint sensing layer 410 that is not covered by the light control layer (LCL). The fingerprint circuit board 500 may be attached to the upper surface of the fingerprint sensing layer 410 that is not covered by the light control layer (LCL) using an anisotropic conductive film. Because of this, the fingerprint circuit board 500 may be electrically connected to the sensor pixels of the fingerprint sensing layer 410. Therefore, each of the sensor pixels of the fingerprint sensing layer 410 can output a sensing voltage according to the sensing current of the photo-sensing element through the fingerprint circuit board 500. The fingerprint driving circuit 510, which is electrically connected to the fingerprint circuit board 500, can recognize the fingerprint pattern of the finger according to the detection voltages of the sensor pixels.

The fingerprint driving circuit 510 may be disposed on the fingerprint circuit board 500 as shown in FIG. 13, but is not limited thereto. The fingerprint driving circuit 510 may be placed on a separate circuit board electrically connected to the fingerprint circuit board 500. The fingerprint circuit board 500 may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip-on film.

Figure 14 illustrates that the user touches the finger F on the display device 10 for fingerprint recognition.

Referring to FIG. 14 , the display device 10 may further include a cover window CW disposed on the upper surface of the display panel 100 . The cover window CW may be disposed at the top of the display panel 100 to cover the top surface of the display panel 100. The cover window CW may serve to protect the top surface of the display panel 100. The cover window CW may be attached to the upper surface of the display panel 100 using a transparent adhesive member.

The cover window (CW) is made of a transparent material and may be glass or plastic. For example, if the cover window (CW) is glass, it may be ultra-thin glass (UTG) with a thickness of 0.1 mm or less. If the cover window (CW) is made of plastic, it may include a transparent polyimide film.

A fingerprint sensor 400 may be disposed on the lower surface of the display panel 100. The fingerprint sensor 400 may be attached to the lower surface of the display panel 100 using a transparent adhesive member.

The fingerprint sensor 400 may include a fingerprint sensing layer 410 including sensor pixels (SP), and a light control layer (LCL) including a light blocking layer (LS) and a light transmissive layer (LT). Each of the sensor pixels SP may overlap at least a portion of the opening area OA of the light control layer LCL in the third direction DR3.

Each of the opening areas (OA) of the light control layer (LCL) may be a passage through which light reflected from the ridge (RID) and valley (VAL) of the fingerprint of the finger (F) is incident. Specifically, when the user's finger F touches the cover window CW, light output from the display panel 100 may be reflected from the crests and valleys of the fingerprint of the finger F. Light reflected from the finger F may be incident on the sensor pixels SP of the fingerprint sensing layer 410 through the display panel 100 and the opening areas OA of the light control layer LCL.

The range (LR) of light incident on the sensor pixel (SP) through the opening areas (OA) of the light control layer (LCL) is the distance (FP) between the ridge (RID) and the valley (VAL) of the fingerprint of the finger (F). It can be shorter. The distance (FP) between the crest (RID) and the valley (VAL) of the fingerprint of the finger (F) may be approximately 500㎛. Due to this, the sensing current flowing through the photo-sensing element of each of the sensor pixels SP may be different depending on whether the light is reflected from the ridge of the fingerprint of the finger F or the light reflected from the valley of the fingerprint of the finger F. there is. Therefore, the detection voltages output from the sensor pixels SP may be different depending on whether the light is reflected from the ridge of the fingerprint of the finger F or the light reflected from the valley of the fingerprint of the finger F. Accordingly, the fingerprint driving circuit 510 can recognize the fingerprint pattern of the finger F according to the detection voltages of the sensor pixels SP.

Referring to FIG. 15 , the fingerprint sensor 400 may include a fingerprint sensing layer 410 and a light control layer (LCL) disposed on the fingerprint sensing layer 410 .

The fingerprint sensing layer 410 may include sensor pixels (SP) that sense light. Each of the sensor pixels (SP) may include a second thin film transistor (ST2) and a photo-sensing element (PD).

A buffer film (BF) may be disposed on the fingerprint sensor substrate (FSUB). The fingerprint sensor substrate (FSUB) may be made of an insulating material such as polymer resin. For example, the fingerprint sensor substrate (FSUB) may include polyimide. Each fingerprint sensor substrate (FSUB) may be a flexible substrate capable of bending, folding, rolling, etc.

The buffer film (BF) is a film to protect the thin film transistor and photosensitive element (PD) of the fingerprint sensing layer 410 from moisture penetrating through the fingerprint sensor substrate (FSUB), which is vulnerable to moisture penetration. The buffer film BF may be composed of a plurality of inorganic films stacked alternately. For example, the buffer film BF may be formed as a multilayer in which one or more inorganic layers selected from the group consisting of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

The second active layer ACT2 of the second thin film transistor ST2 may be disposed on the buffer film BF. The second active layer ACT2 of the second thin film transistor ST2 includes polycrystalline silicon, single crystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The second active layer (ACT2) of the second thin film transistor (ST2), which is exposed and not covered by the second gate insulating film (GI2), is doped with impurities or ions and may have conductivity. Therefore, the second source electrode S2 and the second drain electrode D2 of the second active layer ACT2 of the second thin film transistor ST2 can be formed.

A second gate insulating layer GI2 may be disposed on the second active layer ACT2 of the second thin film transistor ST2. In FIG. 15, the second gate insulating film GI2 is between the second gate electrode G2 and the second active layer ACT2 of the second thin film transistor ST2, and the first fingerprint capacitor electrode FCE1 and the buffer film BF. ), but is not limited to this. The second gate insulating layer GI2 may be disposed between the first insulating layer INS1 and the second active layer ACT2 and between the first insulating layer INS1 and the buffer layer BF. The second gate insulating layer GI2 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

The second gate electrode G2 of the second thin film transistor ST2 and the first fingerprint capacitor electrode FCE1 may be disposed on the second gate insulating film GI2. The second gate electrode G2 of the second thin film transistor ST2 may overlap the second active layer ACT2 in the third direction DR3. The second gate electrode (G2) of the second thin film transistor (ST2) and the first fingerprint capacitor electrode (FCE1) are made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), It may be formed as a single layer or multiple layers made of any one of nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

A first insulating film INS1 may be disposed on the second gate electrode G2 of the second thin film transistor ST2 and the first fingerprint capacitor electrode FCE1. The first insulating layer INS1 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first insulating layer INS1 may include a plurality of inorganic layers.

A photo-sensing device (PD) and a second fingerprint capacitor electrode (FCE2) may be disposed on the first insulating film (INS1). The second fingerprint capacitor electrode PCE2 may overlap the first fingerprint capacitor electrode PCE1 in the third direction DR3. Since the first insulating film INS1 has a predetermined dielectric constant, a capacitor will be formed by the first fingerprint capacitor electrode FCE1, the second fingerprint capacitor electrode PCE2, and the first insulating film INS1 disposed between them. You can.

The photo-sensing device PD may be formed as a photo diode as shown in FIG. 15, but is not limited thereto. The photo-sensing device (PD) may be formed of a photo transistor. The photo-sensing device (PD) may include a first sensing electrode (PCE), a sensing semiconductor layer (PSEM), and a second sensing electrode (PAE). The first sensing electrode (PCE) may be a cathode electrode, and the second sensing electrode (PAE) may be an anode electrode.

The first sensing electrode (PCE) may be disposed on the first insulating layer (INS1). The first sensing electrode (PCE) may be formed of the same material as the second fingerprint capacitor electrode (PCE2). The first sensing electrode (PCE) and the second fingerprint capacitor electrode (PCE2) are formed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), and aluminum (Al), or a laminated structure of aluminum and titanium ( Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO).

A light receiving semiconductor layer (PSEM) may be disposed on the first sensing electrode (PCE). The light receiving semiconductor layer (PSEM) may be formed in a PIN structure in which a P-type semiconductor layer (PL), an I-type semiconductor layer (IL), and an N-type semiconductor layer (NL) are stacked in that order. When the light receiving semiconductor layer (PSEM) is formed in a PIN structure, the I-type semiconductor layer (IL) is depleted by the P-type semiconductor layer (PL) and the N-type semiconductor layer (NL), generating an internal electric field. In this way, holes and electrons generated by sunlight drift by the electric field. Because of this, holes can be collected into the second sensing electrode (PAE) through the P-type semiconductor layer (PL) and electrons can be collected into the first sensing electrode (PCE) through the N-type semiconductor layer (NL).

The P-type semiconductor layer PL may be disposed close to the side on which external light is incident, and the N-type semiconductor layer NL may be disposed far away from the side on which external light is incident. Since the drift mobility of holes is low due to the drift mobility of electrons, it is desirable to form the P-type semiconductor layer (PL) close to the incident surface of external light in order to maximize collection efficiency by incident light.

The N-type semiconductor layer (NL) is disposed on the first sensing electrode (PCE), the I-type semiconductor layer (IL) is disposed on the N-type semiconductor layer (NL), and the P-type semiconductor layer (PL) is disposed on the I-type semiconductor layer (PL). It may be disposed on the semiconductor layer (IL). In this case, the P-type semiconductor layer (PL) may be formed by doping amorphous silicon (a-Si:H) with a P-type dopant. The I-type semiconductor layer (IL) may be made of amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H). The N-type semiconductor layer (NL) may be formed by doping amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H) with an N-type dopant. The P-type semiconductor layer (PL) and the N-type semiconductor layer (NL) may be formed to a thickness of approximately 500 Å, and the I-type semiconductor layer (IL) may be formed to a thickness of 5,000 Å to 10,000 Å.

Alternatively, the N-type semiconductor layer (NL) is disposed on the first sensing electrode (PCE), the I-type semiconductor layer (IL) is omitted, and the P-type semiconductor layer (PL) is disposed on the N-type semiconductor layer (NL). can be placed. In this case, the P-type semiconductor layer (PL) may be formed by doping amorphous silicon (a-Si:H) with a P-type dopant. The N-type semiconductor layer (NL) may be formed by doping amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H) with an N-type dopant. The P-type semiconductor layer (PL) and N-type semiconductor layer (NL) may be formed to a thickness of 500 Å.

In addition, the upper or lower surface of at least one of the first sensing electrode (PCE), the P-type semiconductor layer (PL), the I-type semiconductor layer (IL), the N-type semiconductor layer (NL), and the second sensing electrode (PAE). It can be formed into a concavo-convex structure through a texturing process to increase the absorption rate of external light. The texture processing process is a process of forming the surface of a material into a bumpy, concavo-convex structure and processing it into a shape similar to the surface of a fabric. The texture processing process can be performed through an etching process using photolithography, anisotropic etching using a chemical solution, or a groove forming process using mechanical scribing.

The second sensing electrode (PAE) may be disposed on the P-type semiconductor layer (PL). The second sensing electrode (PAE) may be formed of a transparent conductive oxide (TCO) such as induim tin oxide (ITO) and induim zinc oxide (IZO) that can transmit light.

A second insulating film INS2 may be disposed on the photo-sensing device PD and the second fingerprint capacitor electrode FCE2. The second insulating layer INS2 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second insulating layer INS2 may include a plurality of inorganic layers.

A first connection electrode (CE1), a second connection electrode (CE2), and a third connection electrode (CE3) may be disposed on the second insulating film (INS2).

The first connection electrode (CE1) penetrates the first insulating film (INS1) and the second insulating film (INS2) through the source contact hole (SCT) exposing the second source electrode (S2) of the second thin film transistor (ST2). It may be connected to the second source electrode (S2) of the second thin film transistor (ST2).

The second connection electrode (CE2) penetrates the first insulating film (INS1) and the second insulating film (INS2) through the drain contact hole (DCT) exposing the second drain electrode (D2) of the second thin film transistor (ST2). It may be connected to the second drain electrode (D2) of the second thin film transistor (ST2). The second connection electrode CE2 may be connected to the first sensing electrode PCE through the first sensing contact hole RCT1 that penetrates the second insulating film INS2 and exposes the first sensing electrode PCE. Because of this, the drain electrode (D2) of the second thin film transistor (ST2) and the first sensing electrode (PCE) of the photo-sensing device (PD) may be connected by the second connection electrode (CE2).

The third connection electrode CE3 may be connected to the second sensing electrode PAE through the second sensing contact hole RCT2 that penetrates the second insulating film INS2 and exposes the second sensing electrode PAE.

The first connection electrode (CE1), the second connection electrode (CE2), and the third connection electrode (CE3) are made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), It may be formed as a single layer or multiple layers made of any one of nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

A third insulating film INS3 may be disposed on the first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3. The third insulating layer INS3 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The third insulating layer INS3 may include a plurality of inorganic layers. The third insulating film INS3 may be omitted.

A planarization layer (PLA) may be disposed on the third insulating layer (INS3). The planarization film (PLA) can be formed of an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is.

Since the description of the light control layer (LCL) is the same as the above-described embodiments, it will be omitted. In FIG. 15 , the fingerprint sensor 400 includes the light control layer (LCL) according to the embodiment of FIG. 7 as an example, but the present invention is not limited thereto. The fingerprint sensor 400 according to this embodiment is not limited to any one of the light control layers (LCL) according to all of the above-described embodiments.

As in the above-described embodiments, the light control layer (LCL) may be disposed directly on the display panel 100, or as in the present embodiment, the light control layer may be placed on the fingerprint sensing layer 410 within the fingerprint sensor 400. (LCL) may be deployed.

The fingerprint sensor 400 of the display device 10 according to this embodiment includes the light control layer (LCL) of the above-described embodiments, so that noise light can be removed, and fingerprint recognition accuracy can thereby be improved. .

Hereinafter, the manufacturing method of the display device will be described.

16 is a flowchart showing a method of manufacturing a display device according to an embodiment. Figure 17 is a cross-sectional view showing step S100 of Figure 16. Figure 18 is a cross-sectional view showing step S200 of Figure 16. Figure 19 is a cross-sectional view showing step S300 of Figure 16. Figure 20 is a cross-sectional view showing step S400 of Figure 16. Figure 21 is a cross-sectional view showing step S500 of Figure 16.

FIGS. 16 to 21 are diagrams showing a method S1 of manufacturing the display device 1 according to an embodiment described with reference to FIG. 1A and the like.

16 to 21, a method (S1) of manufacturing a display device according to an embodiment includes preparing a display panel including a light-emitting element layer (S100), forming a light-transmitting layer on the display panel, Forming a light-shielding layer on the light-transmitting layer and forming a mask pattern on the light-shielding layer (S200), etching the light-shielding layer and the light-transmitting layer to form a light-shielding film and the first light-transmitting portion (S300), mask pattern It may include removing (S400) and forming the second light transmitting portion (S500).

First, in the step of preparing a display panel including a light emitting device layer (S100), the display panel 100 may be prepared. Since the description of the display panel 100 is the same as the above-described embodiments, it will be omitted.

Next, in step S200 of forming a light-transmitting layer on the display panel, forming a light-shielding layer on the light-transmitting layer, and forming a mask pattern on the light-transmitting layer, the light-transmitting layer is formed on the display panel 100. (LTL), light blocking layer (LSL), and mask pattern (MS) can be formed.

A light transmissive layer (LTL) may be formed by depositing a transparent organic material on the display panel 100. The thickness of the light transmissive layer (LTL) may be 2 μm to 8 μm. The light transmissive layer (LTL) may include an organic layer such as acryl resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is.

A light blocking layer (LSL) can be formed by depositing a light blocking organic material on the light transmissive layer (LTL). The thickness of the light blocking layer (LSL) may be 10 μm to 25 μm. The light blocking layer (LSL) is a photosensitive resin capable of absorbing or blocking light, and may include an organic material including an organic black pigment such as carbon black.

The mask pattern (MS) may be formed by depositing an organic material or an inorganic material on the light blocking layer (LSL). The mask pattern MS may be an organic layer such as photoresist. Alternatively, the mask patterns MS may be a transparent conductive oxide (TCO) such as induim tin oxide (ITO) or induim zinc oxide (IZO), and an inorganic film such as aluminum (Al).

Next, in the step (S300) of forming the light blocking layer and the first light transmitting portion by etching the light blocking layer and the light transmitting layer, the light blocking layer (LSL) and the light transmitting layer (LTL) are etched to form the light blocking layer (LS) and the first light transmitting portion. A transmission portion (LTA1) can be formed.

The light blocking layer (LS) may be formed by dry etching the light blocking layer (LSL) that is not covered by the mask pattern (MS). A plurality of openings arranged in the matrix direction may be formed in the light blocking layer (LSL).

After etching the light-shielding layer (LSL), the light-transmitting layer (LTL) that is not covered by the mask pattern (MS) and the light-shielding film (LS) may be dry-etched to form the first light-transmitting portion (LTA1). A plurality of openings arranged in the matrix direction may be formed in the first light transmitting portion LTA1.

Next, in the step of removing the mask pattern (S400), the mask pattern MS may be removed through a strip process or an etching process. In some embodiments, the mask pattern may not be removed. In this case, like the display device 10 of another embodiment described with reference to FIG. 8 , the display device 10 may further include a third light transmitting portion LTA3 (see FIG. 8 ).

Next, in the step of forming the second light transmitting portion (S500), a transparent organic material may be filled or deposited to form the second light transmitting portion (LTA2).

A plurality of second light transmissive parts LTA2 may be formed by filling or depositing a transparent organic material into the opening formed in the light blocking film LS and the opening formed in the first light transmissive part LTA1. The plurality of second light transmitting parts LTA2 may be arranged to be spaced apart from each other along the first direction DR1 and the second direction DR2. Side surfaces of the plurality of second light transmitting parts LTA2 may be surrounded by the light blocking film LS and the first light transmitting part LTA1.

The second light transmitting portion (LTA2) may be formed of the same material as the first light transmitting portion (LTA1). The first light transmitting portion (LTA1) and the second light transmitting portion (LTA2) may form an integrated light transmitting film (LT).

According to the manufacturing method (S1) of the display device according to this embodiment, rather than forming an opening in the transmissive film and forming a light-shielding film (LS) inside the opening, the second light is transmitted inside the opening of the previously formed light-shielding film (LS). Since the transmitting portion LTA2 is formed, a process of removing the light blocking layer LS, which may be formed higher than the light transmitting layer LT, may not be performed. Accordingly, process efficiency is improved, and damage to the light-transmitting film LT that occurs during the process of removing the light-shielding film LS can be prevented.

22 is a flowchart showing a method of manufacturing a display device according to another embodiment. Figure 23 is a cross-sectional view showing step S100 of Figure 22. Figure 24 is a cross-sectional view showing step S200 of Figure 22. Figure 25 is a cross-sectional view showing step S300 of Figure 22. Figure 26 is a cross-sectional view showing step S400 of Figure 22. Figure 27 is a cross-sectional view showing step S500 of Figure 22.

FIGS. 22 to 27 are diagrams showing a method S1 of manufacturing the display device 1 according to another embodiment described with reference to FIG. 11 .

22 to 27, a method (S2) of manufacturing a display device according to another embodiment includes preparing a display panel including a light-emitting element layer (S100), forming a first light transmitting portion on the display panel, and , forming a light-shielding layer on the first light-transmitting part, forming a mask pattern on the light-shielding layer (S200), etching the light-shielding layer to form a light-shielding film (S300), removing the mask pattern (S400) , and forming a second light transmitting portion (S500).

First, in the step of preparing a display panel including a light emitting device layer (S100), the display panel 100 may be prepared. Since the description of the display panel 100 is the same as the above-described embodiments, it will be omitted.

Next, in the step S200 of forming a first light transmitting portion on the display panel, forming a light blocking layer on the first light transmitting portion, and forming a mask pattern on the light blocking layer, the first light transmitting portion is formed on the display panel 100. 1 A light transmitting portion (LTA1), a light blocking layer (LSL), and a mask pattern (MS) can be formed.

A transparent organic material may be deposited on the display panel 100 to form the first light transmitting portion LTA1. The thickness of the first light transmitting portion (LTA1) may be 2 μm to 8 μm. The first light transmitting portion (LTA1) may include an organic film such as acryl resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. You can.

A light blocking layer (LSL) may be formed by depositing a light blocking organic material on the first light transmitting portion (LTA1). The thickness of the light blocking layer (LSL) may be 10 μm to 25 μm. The light blocking layer (LSL) is a photosensitive resin capable of absorbing or blocking light, and may include an organic material including an organic black pigment such as carbon black.

The mask pattern (MS) may be formed by depositing an organic material or an inorganic material on the light blocking layer (LSL). The mask pattern MS may be an organic layer such as photoresist. Alternatively, the mask patterns MS may be a transparent conductive oxide (TCO) such as induim tin oxide (ITO) or induim zinc oxide (IZO), and an inorganic film such as aluminum (Al).

Next, in the step of forming a light-shielding film by etching the light-shielding layer (S300), the light-shielding layer (LSL) may be etched to form the light-shielding film (LS).

The light blocking layer (LS) may be formed by dry etching the light blocking layer (LSL) that is not covered by the mask pattern (MS). A plurality of openings arranged in the matrix direction may be formed in the light blocking layer (LSL).

Unlike the manufacturing method S1 of a display device according to an embodiment described with reference to FIG. 16, the method S2 of manufacturing a display device according to the present embodiment may not etch the first light transmitting portion LTA1. there is. Accordingly, the first light transmitting part LTA1 may overlap the light blocking film LS in the thickness direction.

Next, in the step of removing the mask pattern (S400), the mask pattern MS may be removed through a strip process or an etching process. In some embodiments, the mask pattern may not be removed. In this case, like the display device 10 of another embodiment described with reference to FIG. 8 , the display device 10 may further include a third light transmitting portion LTA3 (see FIG. 8 ).

Next, in the step of forming the second light transmitting portion (S500), a transparent organic material may be filled or deposited to form the second light transmitting portion (LTA2).

A plurality of second light transmitting parts LTA2 may be formed by filling or depositing a transparent organic material into the opening formed in the light blocking film LS. The plurality of second light transmitting parts LTA2 may be arranged to be spaced apart from each other along the first direction DR1 and the second direction DR2. Side surfaces of the plurality of second light transmitting portions (LTA2) may be surrounded by a light blocking film (LS).

In the method S2 of manufacturing a display device according to the present embodiment, unlike the method S1 of manufacturing a display device according to an embodiment described with reference to FIG. 16 and the like, the first light transmitting portion LTA1 is not etched, The second light transmissive part LTA2 may be disposed on the first light transmissive part LTA1.

The second light transmitting portion (LTA2) may be formed of the same material as the first light transmitting portion (LTA1). The first light transmitting portion (LTA1) and the second light transmitting portion (LTA2) may form an integrated light transmitting film (LT).

According to the display device manufacturing method (S2) according to the present embodiment, the process efficiency can be increased by etching only the light blocking layer (LSL) without etching the first light transmitting portion (LTA1) in the etching process, and the etching depth can be lowered to achieve a vertical profile.

Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. You will be able to understand it. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

10: display device
100: display panel
LCL: light control layer
LSA: Non-aperture area
OA: aperture area
LT: light transmitting membrane
LTA1: first light transmitting portion
LTA2: second light transmitting portion
LTA3: Third light transmitting portion
LS: light shield
LSM: Light blocking pattern
200: display driving circuit
300: circuit board
400: Fingerprint sensor
410: Fingerprint sensing layer (light sensing layer)
500: Fingerprint circuit board
510: Fingerprint driving circuit
LTL: light transmissive layer
LSL: light blocking layer

Claims (20)

Board;
a light emitting device layer disposed on the substrate and including a plurality of light emitting regions each including a light emitting device that emits light;
an encapsulation layer disposed on the light emitting device layer; and
Provided with a light control layer disposed on the encapsulation layer,
The light control layer includes a light-transmitting film that transmits the light and a light-shielding film that blocks the light,
The light-transmitting membrane is,
a first light transmitting portion overlapping the light blocking film in the thickness direction of the substrate; and
It includes a plurality of second light transmitting portions each surrounded by the light shielding film,
A display device in which the thickness of the light blocking film is greater than the thickness of the first light transmitting part. According to paragraph 1,
The first width, which is the width of any one of the plurality of second light transmitting units in the first direction, is the distance between any two neighboring second light transmitting units among the plurality of second light transmitting units in the first direction. A display device greater than the first distance. According to paragraph 2,
The display device wherein the ratio of the first distance to the first width is equal to the ratio of the thickness of the first light transmitting portion to the thickness of the light blocking film. According to paragraph 3,
A display device wherein a ratio of the first distance to the first width is 1:9 to 2:3. According to paragraph 3,
The display device wherein the first width is 6μm to 9μm and the first distance is 1μm to 4μm. According to paragraph 3,
A display device wherein the light blocking film has a thickness of 10 μm to 25 μm, and the first light transmitting portion has a thickness of 2 μm to 8 μm. According to paragraph 1,
A display device wherein the light transmitting film has a refractive index of 1.1 to 1.6. According to paragraph 1,
The display device wherein the light blocking film includes a light blocking organic material, and the light transmitting film includes a transparent organic material. According to paragraph 1,
The display device further includes a third light transmitting portion disposed on the light blocking film and overlapping the light blocking film in a thickness direction of the substrate. According to clause 9,
The third light transmitting portion is made of photoresist or transparent conductive oxide. According to paragraph 1,
A display device in which the thickness of the light blocking film is lower than the thickness of any one of the plurality of second light transmitting parts. According to paragraph 1,
It further includes a touch layer disposed between the encapsulation layer and the light control layer and including a plurality of touch electrodes,
The light blocking film overlaps the plurality of touch electrodes in a thickness direction of the substrate. According to paragraph 1,
Further comprising light-shielding patterns each overlapping with the light-shielding film in the thickness direction of the substrate,
The display device wherein the light-shielding patterns are located on opposite sides of the light-shielding film with the first light transmitting part interposed therebetween. According to clause 13,
A display device wherein the light blocking pattern includes at least one of Mo, Al, Ti, W, Ag, Cu, and Au. According to paragraph 1,
The display device wherein the light blocking film does not overlap the plurality of light emitting regions in the thickness direction of the substrate. Providing a display panel including a light emitting device layer;
forming a light-transmitting layer on the display panel, forming a light-shielding layer on the light-transmitting layer, and forming a mask pattern on the light-shielding layer;
etching the light-shielding layer and the light-transmitting layer according to the mask pattern to form a light-shielding layer and a first light-transmitting portion, each including an opening;
removing the mask pattern; and
A method of manufacturing a display device comprising forming a plurality of second light transmitting parts by filling or depositing an organic material in the opening of the light shielding film and the opening of the first light transmitting part. According to clause 16,
A method of manufacturing a display device, wherein the first light transmitting portion overlaps the light shielding film and does not overlap with any one of the plurality of second light transmitting portions. Providing a display panel including a light emitting device layer;
forming a first light transmitting portion on the display panel, forming a light blocking layer on the first light transmitting portion, and forming a mask pattern on the light blocking layer;
etching the light blocking layer according to the mask pattern to form a light blocking film including an opening;
removing the mask pattern; and
A method of manufacturing a display device including forming a plurality of second light transmitting portions by filling or depositing an organic material in an opening of the light shielding film. According to clause 18,
A method of manufacturing a display device in which the first light transmitting portion overlaps one of the plurality of second light transmitting portions and the light blocking film. A light sensing layer including a light sensing element through which a sensing current flows according to incident light; and
Provided with a light control layer disposed on the light sensing layer,
The light control layer is,
First light transmitting parts arranged to be spaced apart from each other;
a light-shielding film each overlapping the first light-transmitting portion in the thickness direction; and
It includes second light-transmitting parts disposed between the first light-transmitting part and between the light-shielding film,
A fingerprint sensor in which the thickness of the light shielding film is greater than the thickness of the first light transmitting part.

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