CN117858535A

CN117858535A - Display device, method for manufacturing the same, and fingerprint sensor

Info

Publication number: CN117858535A
Application number: CN202311175715.6A
Authority: CN
Inventors: 赵炫珉; 郑多云; 徐甲锺; 丁有光; 吕伦钟; 郑壤镐
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2022-10-07
Filing date: 2023-09-13
Publication date: 2024-04-09

Abstract

Disclosed are a display device, a method for manufacturing the display device, and a fingerprint sensor. The display device includes a substrate, a light emitting element layer disposed on the substrate and including a plurality of light emitting regions each including a light emitting element that emits light, a package layer disposed on the light emitting element layer, and a light control layer disposed on the package layer, wherein the light control layer includes a light transmitting film that transmits light and a light blocking film that blocks light, and the light transmitting film includes a first light transmitting portion overlapping the light blocking film in a thickness direction of the substrate and a plurality of second light transmitting portions each surrounded by the light blocking film, and a thickness of the light blocking film is greater than a thickness of the first light transmitting portion.

Description

Display device, method for manufacturing the same, and fingerprint sensor

Cross Reference to Related Applications

The present application claims priority and interest from korean patent application No. 10-2022-0128372 filed in the korean intellectual property office at 10/7 of 2022 and 10-2023-0028280 filed in 3/2023, the entire contents of which are incorporated herein by reference.

Technical Field

Embodiments relate to a display device, a method for manufacturing the display device, and a fingerprint sensor.

Background

With the development of information society, demands for display devices for displaying images have increased in various fields. The display device may be a flat panel display such as a liquid crystal display, a field emission display, or a light emitting display device. The light emitting display device may include an organic light emitting diode display device including an organic light emitting diode element as a light emitting element, or an inorganic light emitting diode display device including an inorganic light emitting diode element such as a Light Emitting Diode (LED) as a light emitting element.

In the case of a vehicle display device, when an image displayed on a vehicle display device disposed in front of a driver or a passenger is reflected on a windshield at night, it may interfere with driving of the driver, and thus, it is necessary to control the viewing angle of the image displayed on the vehicle display device. For example, in order to protect privacy, it is necessary to control the viewing angle of an image displayed on a vehicle display device so that the image displayed on the vehicle display device arranged in front of the driver is not provided to the passenger.

The display device may include a fingerprint sensor for fingerprint authentication. The fingerprint sensor may be implemented by an optical method, an ultrasonic method, or a capacitive method. The optical fingerprint sensor may include a light sensing unit sensing light, and a collimator having an opening to provide the light to the light sensing unit and a light blocking unit blocking the light.

In the case where the fingerprint sensor is arranged in a bezel area or a non-display area of the display device, there is a limitation in expanding the display area of the display device. Accordingly, the fingerprint sensor is recently disposed in a display area of the display device. Since the fingerprint sensor is disposed on the lower side of the display panel, the amount of light incident to the light sensing unit of the fingerprint sensor may be small. However, in the case where the area of the light blocking unit of the collimator is reduced to increase the amount of light incident on the light sensing unit of the fingerprint sensor, noise light incident on the light sensing unit may increase. Therefore, the fingerprint recognition accuracy may be lowered.

Disclosure of Invention

Aspects of the present disclosure provide a display device capable of improving light characteristics by forming a light control layer that minimizes both thickness and viewing angle.

Aspects of the present disclosure also provide methods for manufacturing display devices with improved process efficiency.

Aspects of the present disclosure provide a fingerprint sensor having improved fingerprint recognition accuracy by removing noise light.

However, aspects of the present disclosure are not limited to those set forth herein. The above and other embodiments of the present disclosure will become more readily apparent to those of ordinary skill in the art to which the present disclosure pertains by referencing the detailed description of the present disclosure given below.

According to aspects of the present disclosure, a display device may include a substrate, a light emitting element layer disposed on the substrate and including a plurality of light emitting regions each including a light emitting element that emits light, an encapsulation layer disposed on the light emitting element layer, and a light control layer disposed on the encapsulation layer, wherein the light control layer may include a light transmitting film that transmits light and a light blocking film that blocks light, and the light transmitting film may include a first light transmitting portion overlapping the light blocking film in a thickness direction of the substrate and a plurality of second light transmitting portions each surrounded by the light blocking film, and a thickness of the light blocking film is greater than a thickness of the first light transmitting portion.

In an embodiment, a first width, which is a width of each of the plurality of second light transmitting portions in the first direction, may be greater than a first distance, which is a distance between two adjacent second light transmitting portions in the first direction, among the plurality of second light transmitting portions.

In an embodiment, a ratio of the first distance to the first width may be substantially equal to a ratio of a thickness of the first light transmitting portion to a thickness of the light blocking film.

In embodiments, the ratio of the first distance to the first width may be about 1:9 to about 2:3.

In an embodiment, the first width may be about 6 μm to about 9 μm, and the first distance may be about 1 μm to about 4 μm.

In an embodiment, the thickness of the light blocking film may be about 10 μm to about 25 μm, and the thickness of the first light transmitting portion may be about 2 μm to about 8 μm.

In embodiments, the light transmissive film may have a refractive index in the range of about 1.1 to about 1.6.

In an embodiment, the light blocking film may include a light blocking organic material, and the light transmitting film may include a transparent organic material.

In an embodiment, the display device may further include a third light-transmitting portion, wherein the third light-transmitting portion may be disposed on the light-blocking film and overlap the light-blocking film in a thickness direction of the substrate.

In an embodiment, the third light transmitting portion may be made of a photoresist or a transparent conductive oxide.

In an embodiment, the thickness of the light blocking film may be smaller than the thickness of each of the plurality of second light transmitting portions.

In an embodiment, the display device may further include a touch layer, wherein the touch layer may be disposed between the encapsulation layer and the light control layer, and include a plurality of touch electrodes, and the light blocking film may overlap the plurality of touch electrodes in a thickness direction of the substrate.

In an embodiment, the display device may further include a plurality of light blocking pattern layers, wherein the plurality of light blocking pattern layers may each overlap the light blocking film in a thickness direction of the substrate, and the plurality of light blocking pattern layers may be positioned on opposite sides of the light blocking film with the first light transmitting portion disposed between the plurality of light blocking pattern layers and the opposite sides of the light blocking film.

In an embodiment, the plurality of light blocking pattern layers may include at least one of Mo, al, ti, W, ag, cu and Au.

In an embodiment, the light blocking film may not overlap the plurality of light emitting regions in the thickness direction of the substrate.

According to aspects of the present disclosure, a method for manufacturing a display device may include: providing a display panel including a light emitting element layer; forming a light-transmitting layer on the display panel; forming a light blocking layer on the light transmitting layer; forming a mask pattern layer on the light blocking layer; forming a light blocking film and a first light transmitting portion each including an opening by etching the light blocking layer and the light transmitting layer using the mask pattern layer; removing the mask pattern layer; and forming a plurality of second light-transmitting portions by filling or depositing an organic material in the openings of the light-blocking film and the openings of the first light-transmitting portions.

In an embodiment, the first light-transmitting portion may overlap the light-blocking film, and may not overlap each of the plurality of second light-transmitting portions.

According to aspects of the present disclosure, a method for manufacturing a display device may include: providing a display panel including a light emitting element layer; forming a first light-transmitting portion on the display panel; forming a light blocking layer on the first light transmitting portion; forming a mask pattern layer on the light blocking layer; forming a light blocking film including an opening by etching the light blocking layer using the mask pattern layer; removing the mask pattern layer; and forming a plurality of second light transmitting portions by filling or depositing an organic material in the openings of the light blocking film.

In an embodiment, the first light transmitting portion may overlap each of the plurality of second light transmitting portions and overlap the light blocking film.

According to aspects of the present disclosure, a fingerprint sensor may include a light sensing layer including a light sensing element generating a sensing current according to incident light, and a light control layer disposed on the light sensing layer, wherein the light control layer may include a plurality of first light transmitting portions spaced apart from each other, a plurality of light blocking films respectively overlapping the plurality of first light transmitting portions in a thickness direction, and a plurality of second light transmitting portions disposed between the plurality of first light blocking films, and a thickness of each of the plurality of light blocking films may be greater than a thickness of each of the plurality of first light transmitting portions.

According to the display device according to the embodiment, optical characteristics can be improved by including the light control layer that minimizes both thickness and viewing angle.

According to the method for manufacturing a display device according to the embodiment, process efficiency may be improved.

According to the fingerprint sensor according to the embodiment, fingerprint recognition accuracy can be improved by removing noise light.

However, the effects of the embodiments are not limited to those set forth herein. The above and other effects of the embodiments will become more apparent to those of ordinary skill in the art to which the embodiments pertain by referencing the claims.

Drawings

The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments thereof with reference to the attached drawings in which:

fig. 1A is a schematic perspective view illustrating a display device according to an embodiment;

fig. 1B is an exploded schematic perspective view showing a display device according to an embodiment;

fig. 2 is a schematic plan view illustrating a display panel according to an embodiment;

fig. 3 is a schematic plan view showing a pixel according to an embodiment;

fig. 4 is a schematic view of a display device applied to a vehicle according to an embodiment;

FIG. 5 is a schematic cross-sectional view of the display panel taken along line I-I' of FIG. 1A;

FIG. 6 is a schematic cross-sectional view of the display panel and light management layer taken along line I-I' of FIG. 1A;

FIG. 7 is a schematic cross-sectional view of a light management layer according to an embodiment;

FIG. 8 is a schematic cross-sectional view of a light management layer according to an embodiment;

FIG. 9 is a schematic cross-sectional view of a light management layer according to an embodiment;

FIG. 10 is a schematic cross-sectional view of a light management layer according to an embodiment;

FIG. 11 is a schematic cross-sectional view of a display panel and a light control layer according to an embodiment;

Fig. 12 is a schematic perspective view of a display device according to an embodiment;

fig. 13 is a schematic perspective view illustrating the fingerprint sensor of fig. 12;

FIG. 14 is a schematic cross-sectional view taken along line II-II' of FIG. 13;

fig. 15 is a schematic cross-sectional view illustrating the fingerprint sensor of fig. 14;

fig. 16 is a flowchart illustrating a method for manufacturing a display device according to an embodiment;

fig. 17 is a schematic cross-sectional view illustrating step S100 of fig. 16;

fig. 18 is a schematic cross-sectional view illustrating step S200 of fig. 16;

fig. 19 is a schematic cross-sectional view illustrating step S300 of fig. 16;

fig. 20 is a schematic cross-sectional view illustrating step S400 of fig. 16;

fig. 21 is a schematic cross-sectional view illustrating step S500 of fig. 16;

fig. 22 is a flowchart illustrating a method for manufacturing a display device according to an embodiment;

fig. 23 is a schematic cross-sectional view illustrating step S100 of fig. 22;

fig. 24 is a schematic cross-sectional view illustrating step S200 of fig. 22;

fig. 25 is a schematic cross-sectional view illustrating step S300 of fig. 22;

fig. 26 is a schematic cross-sectional view illustrating step S400 of fig. 22; and

fig. 27 is a schematic cross-sectional view illustrating step S500 of fig. 22.

Detailed Description

In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various embodiments or implementations of the present invention. As used herein, "embodiment" and "implementation" are interchangeable words that are a non-limiting example of an apparatus or method disclosed herein. It may be evident, however, that the various embodiments may be practiced without these specific details or with one or more equivalent arrangements. The various embodiments herein are not necessarily exclusive or limiting of the disclosure. For example, the particular shapes, configurations, and characteristics of embodiments may be used or implemented in another embodiment.

The illustrated embodiments will be understood to provide features of the invention unless otherwise specified. Thus, unless otherwise indicated, features, components, modules, layers, films, panels, regions, and/or aspects, etc. (hereinafter referred to individually or collectively as "elements") of the various embodiments may be combined, separated, interchanged, and/or rearranged in other ways without departing from the invention.

The use of cross-hatching and/or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Thus, unless stated otherwise, no preference or requirement for a particular material, material property, size, ratio, commonality between illustrated elements, and/or any other characteristic, property, or the like of an element, whether cross-hatched or shadow is present or absent, is conveyed or indicated. In addition, in the drawings, the size and relative sizes of elements may be exaggerated for clarity and/or descriptive purposes. While embodiments may be practiced differently, the specific process sequence may be performed differently than as described. For example, two consecutively described processes may be performed substantially simultaneously or in reverse order of the order described. Moreover, like reference numerals designate like elements.

When an element such as a layer is referred to as being "on," "connected to" or "coupled to" another element or layer, it can be directly on, connected or coupled to the other element or layer, or intervening elements or layers may be present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. For the purposes of this description, the term "coupled" may refer to physical, electrical, and/or fluid connection, with or without intervening elements. In addition, the DR 1-axis, DR 2-axis, and DR 3-axis are not limited to three axes such as the X-axis, Y-axis, and Z-axis of the rectangular coordinate system, and can be interpreted in a broader sense. For example, the DR 1-axis, DR 2-axis, and DR 3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. In addition, the X-axis, the Y-axis, and the Z-axis are not limited to three axes such as the X-axis, the Y-axis, and the Z-axis of the rectangular coordinate system, and can be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of a and B" may be construed to mean a alone, B alone, or any combination of a and B. Also, "at least one of X, Y and Z" and "at least one selected from the group consisting of X, Y and Z" can be interpreted as any combination of two or more of X only, Y only, Z only, or X, Y and Z. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Although the terms "first," "second," etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Thus, a first element discussed below could be termed a second element without departing from the teachings of the present disclosure.

Spatially relative terms such as "under", "below", "lower", "above", "upper", "above", "side", and the like may be used herein for descriptive purposes and thereby describe the relationship of one element to another as shown in the figures. In addition to the orientations depicted in the drawings, spatially relative terms are intended to encompass different orientations of the device in use, operation, and/or manufacture. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the term "below" can encompass both an orientation of above and below. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, the terms "comprises," "comprising," "includes," and/or "including," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It is also noted that the terms "substantially", "about" and other like terms as used herein are used as approximate terms and not as degree terms, and are, therefore, utilized to account for measured values, calculated values, and/or inherent deviations that would be recognized by one of ordinary skill in the art.

Various embodiments are described herein with reference to cross-sectional illustrations and/or exploded illustrations that are schematic illustrations of embodiments and/or intermediate structures. Thus, variations in the shape of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments disclosed herein should not necessarily be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result, for example, from manufacturing. In this way, the regions illustrated in the figures may be schematic in nature and the shape of these regions may not reflect the actual shape of the regions of the device and thus are not necessarily intended to be limiting.

Hereinafter, detailed embodiments will be described with reference to the accompanying drawings.

Fig. 1A is a schematic perspective view illustrating a display device according to an embodiment. Fig. 1B is an exploded schematic perspective view illustrating a display device according to an embodiment. Fig. 2 is a schematic plan view illustrating a display panel according to an embodiment. Fig. 3 is a schematic plan view showing a pixel according to an embodiment.

Referring to fig. 1A, 1B, 2, and 3, the display device 10 may be a device that displays a moving image or a still image, and may be used as a display screen of each of various products such as televisions, laptop computers, monitors, billboards, and internet of things (IoT) devices, and portable electronic devices such as mobile phones, smart phones, tablet Personal Computers (PCs), smartwatches, watch phones, mobile communication terminals, electronic notebooks, electronic books, portable Multimedia Players (PMPs), vehicle displays, and Ultra Mobile PCs (UMPCs).

The display device 10 may be, for example, an organic light emitting display device having an organic light emitting diode, a quantum dot light emitting display device including a quantum dot light emitting layer, an inorganic light emitting display device including an inorganic semiconductor, and a micro light emitting display device having a micro Light Emitting Diode (LED). Hereinafter, the display device 10 is described as an organic light emitting display device, but the embodiment is not limited thereto.

The display device 10 may include a display panel 100, a display driving circuit 200, a circuit board 300, and a light control layer LCL.

The display panel 100 may be formed with a rectangular plane having a long side in a first direction DR1 and a short side in a second direction DR2 crossing the first direction DR 1. The corner portion where the long side in the first direction DR1 and the short side in the second direction DR2 intersect may be rounded to have a specific curvature, or may be formed as a right angle. The planar shape of the display panel 100 is not limited to a quadrangular shape, and may be other polygonal shapes, circular shapes, or elliptical shapes. The display panel 100 may be formed flat, but the embodiment is not limited thereto. For example, the display panel 100 may include curved surface portions formed at left and right distal ends thereof and having a constant curvature or a variable curvature. For example, the display panel 100 may be flexibly formed to be bent, folded, or curled.

In the illustrated drawing, the first direction DR1 and the second direction DR2 are respectively horizontal directions and cross each other. For example, the first direction DR1 and the second direction DR2 may be orthogonal to each other. For example, the third direction DR3 may be a vertical direction that intersects the first direction DR1 and the second direction DR2 (e.g., is orthogonal to the first direction DR1 and the second direction DR 2).

Each of the pixels PX may include sub-pixels RP, GP, and BP as shown in fig. 3. Each of the pixels PX is illustrated in fig. 3 as including three sub-pixels RP, GP, and BP (e.g., a first sub-pixel BP, a second sub-pixel RP, and a third sub-pixel GP), but the embodiment is not limited thereto. Further, the first, second, and third sub-pixels BP, RP, and GP are shown in fig. 3 to be arranged in the first direction DR1, but the sub-pixels are not limited thereto and the order thereof may be changed.

Each of the first, second, and third subpixels BP, RP, and GP may have a rectangular, square, or diamond-shaped planar shape. For example, as shown in fig. 3, each of the first, second, and third sub-pixels BP, RP, and GP may have a rectangular planar shape with a short side in the first direction DR1 and a long side in the second direction DR 2.

In some embodiments, each of the first, second, and third sub-pixels BP, RP, and GP may have a planar shape including a square or diamond shape having sides with the same length in the first and second directions DR1 and DR 2.

As shown in fig. 3, the first, second, and third sub-pixels BP, RP, and GP may be arranged in the first direction DR 1. In another example, any one of the second and third subpixels RP and GP and the first subpixel BP may be arranged in the first direction DR1, and the other one of the second and third subpixels RP and GP and the first subpixel BP may be arranged in the second direction DR 2. For example, the first and second sub-pixels BP and RP may be arranged in the first direction DR1, and the first and third sub-pixels BP and GP may be arranged in the second direction DR 2.

In another example, any one of the first and third subpixels BP and GP and the second subpixel RP may be arranged in the first direction DR1, and the other one of the first and third subpixels BP and GP and the second subpixel RP may be arranged in the second direction DR 2. In another example, any one of the first and second sub-pixels BP and RP and the third sub-pixel GP may be arranged in the first direction DR1, and the other one of the first and second sub-pixels BP and RP and the third sub-pixel GP may be arranged in the second direction DR 2.

The first subpixel BP may emit first light, the second subpixel RP may emit second light, and the third subpixel GP may emit third light. For example, the first light may be light in the blue wavelength band, the second light may be light in the red wavelength band, and the third light may be light in the green wavelength band. The red wavelength band may be a wavelength band of about 600nm to about 750nm, the green wavelength band may be a wavelength band of about 480nm to about 560nm, and the blue wavelength band may be a wavelength band of about 370nm to about 460nm, but the embodiment is not limited thereto.

Each of the first, second, and third sub-pixels BP, RP, and GP may include at least one of an organic light emitting element including an organic material, an inorganic light emitting element including an inorganic semiconductor, a quantum dot light emitting element including a quantum dot light emitting layer, and a micro light emitting diode (micro LED) as a light emitting element emitting light. Hereinafter, each of the first, second, and third sub-pixels BP, RP, and GP includes an organic light emitting element, but the embodiment is not limited thereto.

As shown in fig. 2 and 3, the area (or size) of the first subpixel BP, the area (or size) of the second subpixel RP, and the area (or size) of the third subpixel GP may be substantially the same as each other, but the embodiment is not limited thereto. At least one of the area (or size) of the first subpixel BP, the area (or size) of the second subpixel RP, and the area (or size) of the third subpixel GP may be different from the remaining one. In another example, any two of the area (or size) of the first subpixel BP, the area (or size) of the second subpixel RP, and the area (or size) of the third subpixel GP may be substantially the same as each other, and the remaining one may be different from the areas (or sizes) of the two. In another example, the area (or size) of the first subpixel BP, the area (or size) of the second subpixel RP, and the area (or size) of the third subpixel GP may be different from each other.

The display panel 100 may further include a main area MA and a sub-area SBA.

The main area MA may include a display area in which an image is displayed and a non-display area which is a peripheral area of the display area. The display area may include display pixels for displaying an image. The non-display area may be defined as an area from the outside of the display area to an edge portion of the display panel 100.

The sub-area SBA may protrude from one side of the main area MA in the first direction DR 1. The length of the sub-region SBA in the first direction DR1 may be smaller than the length of the main region MA in the first direction DR1, and the length of the sub-region SBA in the second direction DR2 may be smaller than the length of the main region MA in the second direction DR2, but the embodiment is not limited thereto.

The sub-area SBA is shown unfolded in fig. 1A and 1B, but the sub-area SBA may be folded and the sub-area SBA may be arranged on the lower surface of the display panel 100. In the case where the sub-region SBA is folded, the sub-region SBA may overlap with the main region MA in the thickness direction (e.g., in the third direction DR 3). The display driving circuit 200 may be arranged in the sub-region SBA.

The display driving circuit 200 may generate signals and voltages for driving the display panel 100. The display driving circuit 200 may be formed as an Integrated Circuit (IC) and may be attached to the display panel 100 by a Chip On Glass (COG) method, a Chip On Plastic (COP) method, or an ultrasonic bonding method, but the embodiment is not limited thereto. For example, the display driving circuit 200 may be attached to the circuit board 300 in a chip-on-film (COF) manner.

The circuit board 300 may be attached to an end of the display panel 100 by using an Anisotropic Conductive Film (ACF). Accordingly, the circuit board 300 may be electrically connected to the display panel 100 and the display driving circuit 200. The display panel 100 and the display driving circuit 200 may receive digital video data, timing signals, and driving voltages through the circuit board 300. The circuit board 300 may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip-on-film.

The light control layer LCL may be disposed on the display panel 100. The light control layer LCL may be arranged in the display area of the main area MA.

The light control layer LCL may include an open area OA arranged in the first and second directions DR1 and DR2 and a non-open area LSA surrounding the open area OA. The opening area OA is an area transmitting light, and may be an area extending in the third direction DR3 and light-permeable to the light blocking film LS and the light transmitting film LT. As shown in fig. 1A and 1B, each of the opening areas OA may have a circular shape in a plan view, but the embodiment is not limited thereto. Each of the opening areas OA may have an elliptical shape or a polygonal shape in a plan view. The non-open area LSA may be the remaining area of the light control layer LCL excluding the open area OA. The opening area OA may refer to an area overlapping with an area where the second light transmitting portion LTA2 is arranged in the third direction DR3, and the non-opening area LSA may refer to an area overlapping with an area where the second light transmitting portion LTA2 is not arranged in the third direction DR 3.

The light control layer LCL may include a light-transmitting film LT transmitting light emitted from the display panel 100 and a light-blocking film LS blocking light emitted from the display panel 100. The light-transmitting film LT may include a first light-transmitting portion LTA1 disposed in the non-opening area LSA and a second light-transmitting portion LTA2 disposed in the opening area OA. The light blocking film LS may be disposed in the non-opening area LSA.

The light control layer LCL will be described below with reference to fig. 6 and the like.

Fig. 4 is a schematic view of a case where the display device according to the embodiment is applied to a vehicle.

Referring to fig. 4, the display device 10 according to the embodiment may be, for example, a display device applied to a vehicle. The vehicle may include a body forming an exterior appearance of the vehicle and an interior space defined by the body. The body may include a windshield W that protects the driver and passengers from the outside and provides visibility to the driver. As shown in fig. 4, the display device 10 may be provided in the internal space.

In an embodiment, the display device 10 may be disposed on an instrument panel provided in the interior space. For example, the display device 10 may be disposed on an instrument panel in front of a seat of a driver to provide speed information to the driver, or may be disposed on an instrument panel in front of a seat of a passenger to provide entertainment information to the passenger, or may be disposed at a center portion of the instrument panel to provide map information and the like. Fig. 4 exemplarily shows the display device 10 arranged on an instrument panel in front of a seat of a driver and the driver who observes a display screen of the display device 10.

The driver can recognize (or visually recognize) the display screen of the display device 10 by the light L1 emitted from the display device 10 toward the driver. However, some of the light L2 emitted from the display device 10 may be reflected on the windshield W and provided to the driver. For example, images reflected on the windshield W may interfere with the driver's driving. However, in the display device 10 according to the embodiment, by adjusting the viewing angles (e.g., vertical viewing angles) of the light L1 and the light L2 emitted from the display device 10 in the front direction (e.g., the direction toward the driver), it is possible to prevent in advance that some of the light L2 emitted from the display device 10 is reflected on the surrounding windshield W and supplied to the driver.

Also, some of the light L2 emitted from the display device 10 may be provided toward the passenger. For example, the display device 10 may be disadvantageous for privacy protection. However, in the display device 10 according to the embodiment, by adjusting the viewing angles (e.g., vertical viewing angles) of the light L1 and the light L2 emitted from the display device 10 in the front direction (the direction toward the driver), the image displayed on the vehicle display device arranged in front of the driver can be prevented from being provided to the passenger.

The viewing angle can be adjusted by the light-transmitting film LT and the light-blocking film LS. The viewing angle may be limited to a specific angle range by the light blocking film LS and the light transmitting film LT. As an example, in the case where a dummy line that is directed toward the driver in the front direction and extends in the direction perpendicular to the display surface of the display device 10 is regarded as a normal line, the viewing angle may be an angle within 30 ° from the normal line.

Fig. 5 is a schematic cross-sectional view of the display panel taken along line I-I' of fig. 1A.

Referring to fig. 5, the display panel 100 may include a display layer DU and a touch sensing layer TSU (e.g., a touch layer).

The display layer DU may include a first substrate SUB1, a first buffer film BF1, a second substrate SUB2, a lower metal layer BML, a second buffer film BF2, a first thin film transistor ST1, a first gate insulating film GI1, an interlayer insulating film 140 (e.g., a first interlayer insulating film 141 and a second interlayer insulating film 142), a first capacitor electrode CAE1, a first anode connection electrode ANDE1, a first organic film 160, a second anode connection electrode ANDE2, a second organic film 180, a light emitting element 170, a bank 190, and a encapsulation layer TFE.

The first buffer film BF1 may be disposed on the first substrate SUB1, the second substrate SUB2 may be disposed on the first buffer film BF1, and the second buffer film BF2 may be disposed on the second substrate SUB 2.

Each of the first substrate SUB1 and the second substrate SUB2 may be formed of an insulating material such as a polymer resin. For example, the first substrate SUB1 and the second substrate SUB2 may include polyimide. Each of the first substrate SUB1 and the second substrate SUB2 may be a flexible substrate that is bendable, foldable, crimpable, or the like.

Each of the first buffer film BF1 and the second buffer film BF2 may be a film for protecting the first thin film transistor ST1 and the light emitting layer 172 from moisture penetrating through the first substrate SUB1 and the second substrate SUB2 that are susceptible to moisture penetration. Each of the first buffer film BF1 and the second buffer film BF2 may include inorganic films that are alternately stacked. For example, each of the first buffer film BF1 and the second buffer film BF2 may be formed as a multilayer film in which one or more inorganic films of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

The lower metal layer BML may be disposed on the second substrate SUB 2. The lower metal layer BML may be disposed to overlap the first active layer ACT1 of the first thin film transistor ST1 in the third direction DR3 to prevent leakage current from occurring in the case where light is incident on the first active layer ACT1 of the first thin film transistor ST 1. The lower metal layer BML may be formed as a single layer or a plurality of layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. In another example, the lower metal layer BML may be omitted.

The first active layer ACT1 of the first thin film transistor ST1 may be disposed on the second buffer film BF 2. The first active layer ACT1 of the first thin film transistor ST1 may include polycrystalline silicon (e.g., low temperature polycrystalline silicon), single crystal silicon, amorphous silicon, or an oxide semiconductor. The first active layer ACT1 of the first thin film transistor ST1, which is exposed and not covered by the first gate insulating film GI1, may be doped with impurities or ions to have conductivity. Accordingly, the first source electrode S1 and the first drain electrode D1 of the first active layer ACT1 of the first thin film transistor ST1 may be formed.

The first gate insulating film GI1 may be disposed on the first active layer ACT1 of the first thin film transistor ST 1. In fig. 5, the first gate insulating film GI1 is shown to be disposed between the first gate electrode G1 of the first thin film transistor ST1 and the first active layer ACT1, but the embodiment is not limited thereto. The first gate insulating film GI1 may also be disposed between the first interlayer insulating film 141 and the first active layer ACT1 and between the first interlayer insulating film 141 and the second buffer film BF 2. The first gate insulating film GI1 may be formed as an inorganic layer, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

The first gate electrode G1 of the first thin film transistor ST1 may be disposed on the first gate insulating film GI 1. The first gate electrode G1 of the first thin film transistor ST1 may overlap the first active layer ACT1 in the third direction DR 3. The first gate electrode G1 of the first thin film transistor ST1 may be formed as a single layer or a plurality of layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

The first interlayer insulating film 141 may be disposed on the first gate electrode G1 of the first thin film transistor ST 1. The first interlayer insulating film 141 may be formed as an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating film 141 may include an inorganic film.

The first capacitor electrode CAE1 may be disposed on the first interlayer insulating film 141. The first capacitor electrode CAE1 may overlap the first gate electrode G1 of the first thin film transistor ST1 in the third direction DR 3. Since the first interlayer insulating film 141 has a specific dielectric constant, a capacitor may be formed of the first capacitor electrode CAE1, the first gate electrode G1, and the first interlayer insulating film 141 disposed between the first capacitor electrode CAE1 and the first gate electrode G1. The first capacitor electrode CAE1 may be formed as a single layer or a plurality of layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

The second interlayer insulating film 142 may be disposed on the first capacitor electrode CAE 1. The second interlayer insulating film 142 may be formed as an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating film 142 may include an inorganic film.

The first anode connection electrode ANDE1 may be disposed on the second interlayer insulating film 142. The first anode connection electrode ANDE1 may be connected (e.g., electrically connected) to the first drain electrode D1 of the first thin film transistor ST1 by penetrating the first and second interlayer insulating films 141 and 142 to expose the first anode contact hole ANCT1 of the first drain electrode D1 of the first thin film transistor ST 1. The first anode connection electrode ANDE1 may be formed as a single layer or a plurality of layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

The first organic film 160 for planarization may be disposed on the first anode connection electrode ANDE1. The first organic film 160 may be formed as an organic film made of acryl resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, or the like.

The second anode connection electrode ANDE2 may be disposed on the first organic film 160. The second anode connection electrode ANDE2 may be connected (e.g., electrically connected) to the first anode connection electrode ANDE1 by penetrating the first organic film 160 to expose the second anode contact hole ANCT2 of the first anode connection electrode ANDE1. The second anode connection electrode ANDE2 may be formed as a single layer or a plurality of layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

The second organic film 180 may be disposed on the second anode connection electrode ANDE2. The second organic film 180 may be formed as an organic film made of acryl resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, or the like.

In fig. 5, the first thin film transistor ST1 is illustrated as being formed as a top gate type in which the first gate electrode G1 is positioned above the first active layer ACT1, but the embodiment is not limited thereto. The first thin film transistor ST1 may be formed in a bottom gate type in which the first gate electrode G1 is positioned below the first active layer ACT1 or in a double gate type in which the first gate electrode G1 is positioned both above and below the first active layer ACT 1.

The light emitting element 170 and the bank 190 may be disposed on the second organic film 180. For example, the light emitting element 170 and the bank 190 may form a light emitting element layer. Each of the light emitting elements 170 may include a first light emitting electrode 171, a light emitting layer 172, and a second light emitting electrode 173.

The first light emitting electrode 171 may be formed on the second organic film 180. The first light emitting electrode 171 may be connected (e.g., electrically connected) to the second anode connection electrode ANDE2 by penetrating the second organic film 180 to expose the third anode contact hole ANCT3 of the second anode connection electrode ANDE2.

In the top emission structure based on the emission layer 172 emitting light toward the second emission electrode 173, the first emission electrode 171 may be formed of a metal material having high reflectivity, such as a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and Indium Tin Oxide (ITO) (ITO/Al/ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO/APC/ITO). The APC alloy may be an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The bank 190 may be formed to partition (or divide) the first light emitting electrode 171 on the second organic film 180 to define the light emitting area EA. The bank 190 may be formed to cover an edge portion of the first light emitting electrode 171. The bank 190 may be formed as an organic film such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.

The light emitting region EA refers to a region in which the first light emitting electrode 171, the light emitting layer 172, and the second light emitting electrode 173 are sequentially stacked and holes from the first light emitting electrode 171 and electrons from the second light emitting electrode 173 are combined with each other in the light emitting layer 172 to emit light.

The light emitting layer 172 may be formed on the first light emitting electrode 171 (or the first light emitting electrode 171 and the bank 190). The light emitting layer 172 may include an organic material for emitting light of a specific color. For example, the light emitting layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer.

The second light emitting electrode 173 may be disposed on the light emitting layer 172. The second light emitting electrode 173 may be formed to cover the light emitting layer 172. The second light emitting electrode 173 may be a common layer commonly formed in all the light emitting areas EA. For example, a capping layer may be formed on the second light emitting electrode 173.

In the top emission structure, the second light emitting electrode 173 may be formed of a Transparent Conductive Oxide (TCO) such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag) capable of transmitting light. In the case where the second light emitting electrode 173 is formed of a semi-transmissive conductive material, light emission efficiency may be improved by the microcavity.

The encapsulation layer TFE may be disposed on the second light emitting electrode 173. The encapsulation layer TFE may include at least one inorganic film to prevent oxygen or moisture from penetrating into the light emitting element layer. For example, the encapsulation layer TFE may include at least one organic film to protect the light emitting element layer from foreign matter such as dust. For example, the encapsulation layer TFE may include a first inorganic film TFE1, an organic film TFE2, and a second inorganic film TFE3.

The first inorganic film TFE1 may be disposed on the second light emitting electrode 173, the organic film TFE2 may be disposed on the first inorganic film TFE1, and the second inorganic film TFE3 may be disposed on the organic film TFE 2. The first inorganic film TFE1 and the second inorganic film TFE3 may be formed as a multilayer film in which one or more inorganic films of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The organic film TFE2 may be monomeric.

The touch sensing layer TSU may be disposed on the encapsulation layer TFE. The touch sensing layer TSU may include a touch electrode for capacitively sensing a touch of a user and a touch line connecting the touch electrode and the touch driving unit. For example, the touch sensing layer TSU may sense a touch of a user in a mutual capacitance method or a self capacitance method.

In another example, the touch sensing layer TSU may be disposed on a separate substrate disposed on the display layer DU. For example, the substrate supporting the touch sensing layer TSU may be a base member encapsulating the display layer DU.

The touch electrode of the touch sensing layer TSU may be disposed in a touch sensor area overlapping with the display area. The touch lines of the touch sensing layer TSU may be arranged in a touch peripheral area overlapping the non-display area.

The touch sensing layer TSU may include a first touch insulation layer SIL1, a first touch electrode REL, a second touch insulation layer SIL2, a second touch electrode TEL, and a third touch insulation layer SIL3.

The first touch insulation layer SIL1 may be disposed on the encapsulation layer TFE. The first touch insulation layer SIL1 may have an insulation function and an optical function. The first touch insulation layer SIL1 may include at least one inorganic film. For example, the second touch insulation layer SIL2 may be an inorganic film including at least one of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. In another example, the first touch insulation layer SIL1 may be omitted.

The first touch electrode REL may be disposed on the first touch insulation layer SIL1. The first touch electrode REL may not overlap the light emitting element 170. The first touch electrode REL may be formed as a single layer made of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), or Indium Tin Oxide (ITO), or as a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO/APC/ITO).

In an embodiment, as shown in fig. 6, the first touch electrode REL may overlap the non-opening area LSA in the third direction DR 3. The first touch electrode REL may not overlap the opening area OA in the third direction DR 3. For example, the first touch electrode REL may overlap the first light transmitting portion LTA1 and the light blocking film LS in the third direction DR3, and may not overlap the second light transmitting portion LTA 2.

The second touch insulation layer SIL2 may cover the first touch electrode REL and the first touch insulation layer SIL1. The second touch insulation layer SIL2 may have an insulation function and an optical function. For example, the second touch insulation layer SIL2 may be made of a material shown for the first touch insulation layer SIL1.

The second touch electrode TEL may be disposed on the second touch insulation layer SIL 2. The second touch electrode TEL may not overlap the light emitting element 170. The second touch electrode TEL may be formed as a single layer made of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), or Indium Tin Oxide (ITO), or as a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO/APC/ITO).

In an embodiment, as shown in fig. 6, the second touch electrode TEL may overlap the non-opening area LSA in the third direction DR 3. The second touch electrode TEL may not overlap the opening area OA in the third direction DR 3. For example, the second touch electrode TEL may overlap the first light transmitting portion LTA1 and the light blocking film LS in the third direction DR3, and may not overlap the second light transmitting portion LTA 2.

The third touch insulation layer SIL3 may cover the second touch electrode TEL and the second touch insulation layer SIL2. The third touch insulation layer SIL3 may have an insulation function and an optical function. The third touch insulation layer SIL3 may be made of a material shown for the second touch insulation layer SIL2.

The touch sensing layer TSU may further include a planarization layer PAS for planarization. The planarization layer PAS may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.

Fig. 6 is a schematic cross-sectional view of the display panel and the light control layer taken along line I-I' of fig. 1A. Fig. 7 is a schematic cross-sectional view of a light management layer according to an embodiment.

Referring to fig. 6 and 7 and fig. 1A and 1B, the light control layer LCL may be disposed on the display panel 100. The light control layer LCL may control the viewing angle of light emitted from the display panel 100. For example, in the case where the light emitted from the display panel 100 travels (or transmits) at a certain angle or less with respect to the third direction DR3, the light may be emitted to the outside. In the case where the light emitted from the display panel 100 travels (or transmits) at more than a certain angle with respect to the third direction DR3, the light may be absorbed by the light blocking film LS without being emitted to the outside.

The light control layer LCL may include a light transmissive film LT and a light blocking film LS.

The light blocking film LS may be spaced apart from the display panel 100 and disposed on the first light transmitting portion LTA1 of the light transmitting film LT. The lower surface of the light blocking film LS may be in contact (e.g., direct contact) with the upper surface of the first light transmitting portion LTA 1. In the embodiment, the area of the lower surface of the light blocking film LS may be the same as the area of the upper surface of the first light transmitting portion LTA1, but the embodiment is not limited thereto.

The light blocking film LS may be disposed in the non-opening area LSA. The light blocking film LS may include openings arranged in the opening area OA. The light blocking film LS may surround at least a portion of the second light transmitting portion LTA2 disposed in the opening of the opening area OA.

The light blocking film LS may absorb or block light emitted from the display panel 100. The light blocking film LS may include a light blocking organic material. For example, the light blocking film LS may include an organic material containing an organic black pigment such as carbon black as a photosensitive resin capable of absorbing or blocking light.

In some embodiments, the light blocking film LS may overlap the first and second touch electrodes REL and TEL in the third direction DR 3. Since the light blocking film LS and the first and second touch electrodes REL and TEL are disposed so as not to overlap the light emitting area EA, the brightness and display quality of the display device 10 may be improved.

The light-transmitting film LT may be disposed on the display panel 100. The light-transmitting film LT may include a first light-transmitting portion LTA1 and a second light-transmitting portion LTA2. The light-transmitting film LT may be disposed in the non-opening area LSA and the opening area OA on the lower side of the light-blocking film LS. For example, the first light-transmitting portion LTA1 of the light-transmitting film LT may be disposed in the non-opening area LSA on the lower side of the light-blocking film LS, and the second light-transmitting portion LTA2 of the light-transmitting film LT may be disposed in the opening area OA.

The light-transmitting film LT may transmit light emitted from the display panel 100. The light-transmitting film LT may include a transparent organic material. For example, the light-transmitting film LT may be an organic film made of an acryl resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like. In an embodiment, the light-transmitting film LT may be formed as a silicon oxynitride layer or a silicon oxide layer. The light-transmitting film LT may have a refractive index in a range of about 1.1 to about 1.6.

The first light transmitting portion LTA1 may be disposed between the display panel 100 and the light blocking film LS. The upper surface of the first light transmitting portion LTA1 may be in contact (e.g., direct contact) with the lower surface of the light blocking film LS. In the embodiment, the area of the upper surface of the first light transmitting portion LTA1 may be the same as the area of the lower surface of the light blocking film LS, but the embodiment is not limited thereto.

The first light-transmitting portion LTA1 may be disposed in the non-opening area LSA. The first light transmitting portion LTA1 may include openings arranged in the opening area OA. The first light-transmitting portion LTA1 may surround at least a portion of the second light-transmitting portion LTA2 disposed in the opening.

The thickness ls_h of the light blocking film LS may be greater than the thickness lta1_h of the first light transmitting portion LTA 1. For example, the thickness LS_H of the light blocking film LS may be about 10 μm to about 25 μm, and the thickness LTA1_H of the first light transmitting portion LTA1 may be about 2 μm to about 8 μm.

The second light transmitting portion LTA2 may be disposed on the display panel 100. The second light transmitting portion LTA2 may be in contact (e.g., direct contact) with the display panel 100. The second light transmitting portion LTA2 may be disposed inside an opening formed in the light blocking film LS (i.e., an opening of the light blocking film LS) and inside an opening formed in the first light transmitting portion LTA1 (i.e., an opening of the first light transmitting portion LTA 1). The side surface of the second light transmitting portion LTA2 may contact the inner sidewall of the opening formed in the light blocking film LS (i.e., the opening of the light blocking film LS) and contact the inner sidewall of the opening formed in the first light transmitting portion LTA1 (i.e., the opening of the first light transmitting portion LTA 1). The second light-transmitting portion LTA2 may have a cylindrical shape, an elliptical cylindrical shape, or a polygonal cylindrical shape such as a quadrangular cylinder.

The second light transmitting portions LTA2 may be disposed to be spaced apart from each other. In some embodiments, the second light transmitting portions LTA2 may be arranged at regular intervals along the first direction DR1 and the second direction DR2 (e.g., along the row direction and the column direction). For example, the distance between any two second light-transmitting portions LTA2 adjacent to each other in the first and second directions DR1 and DR2 among the second light-transmitting portions LTA2 may be the same, but the embodiment is not limited thereto.

The first distance DS1, which is a distance between the second light-transmitting portions LTA2 in the first and second directions DR1 and DR2, may be substantially equal to a width ls_w of the light blocking film LS disposed between the second light-transmitting portions LTA2 and a width lta1_w of the first light-transmitting portion LTA1 disposed between the second light-transmitting portions LTA 2. In an embodiment, the first distance DS1 may be about 1 μm to about 4 μm.

The first width W1, which is the width lta2_w of the second light transmitting portion LTA2, may be greater than the first distance DS1. In an embodiment, the first width W1 may be about 6 μm to about 9 μm.

The thickness lta2_h of the second light transmitting portion LTA2 may be substantially equal to the sum of the thickness ls_h of the light blocking film LS and the thickness lta1_h of the first light transmitting portion LTA 1. In an embodiment, the thickness lta2_h of the second light transmitting portion LTA2 may be about 10 μm to about 35 μm.

In some embodiments, the ratio of the first distance DS1 to the first width W1 may be substantially equal to the ratio of the thickness lta1_h of the first light transmitting portion LTA1 to the thickness ls_h of the light blocking film LS. For example, the ratio of the first distance DS1 to the first width W1 and the ratio of the thickness lta1_h of the first light transmitting portion LTA1 to the thickness ls_h of the light blocking film LS may be about 1:9 to about 2:3. With a ratio greater than about 1:9, an increase in the thickness of the display device 10 due to an increase in the thickness of the light control layer LCL may be prevented. For example, in methods S10 and S20 (see fig. 16 and 22) for manufacturing a display device to be described below, the opening of the light blocking film LS and the opening of the first light transmitting portion LTA1, in which the second light transmitting portion LTA2 is arranged, may be formed by a dry etching process. For example, where the ratio is designed to be greater than about 1:9, it is possible to prevent the formation of an arcuate profile and achieve a vertical profile. With a ratio of less than 2:3, the desired viewing angle can be achieved.

As shown in fig. 6 and 7, the first light LGT1 emitted from the display panel 100 may be incident toward an interface (e.g., an upper surface of the light control layer LCL) where the light control layer LCL and the outside (e.g., air) intersect at a first incident angle θ1a. The first light LGT1 may be refracted and emitted at the first refraction angle θ1b at the interface.

As shown in fig. 7, the second light LGT2, which is different from the first light LGT1 and is emitted from the display panel 100, may be incident toward an interface (e.g., an upper surface of the light control layer LCL) where the light control layer LCL and the outside (e.g., air) intersect at a second incident angle θ1c. The second light LGT2 may be refracted and emitted at the interface at a second refraction angle θ1d.

The first refractive angle θ1b of the first light LGT1 may be greater than the second refractive angle θ1d of the second light LGT 2. The first refractive angle θ1b of the first light LGT1 may be a maximum viewing angle of the display device 10.

The first light LGT1 may linearly travel (or transmit) and pass through the first, second and third points P1, P2 and P3. The first point P1, the second point P2, and the third point P3 may be positioned on a straight line.

On the cross-sections shown in fig. 6 and 7, the first point P1 may be a point at which an interface at which a side surface (e.g., a right side surface) of the second light-transmitting portion LTA2 and a side surface (e.g., a left side surface) of the first light-transmitting portion LTA1 contact each other intersects with a lower surface of the second light-transmitting portion LTA 2. The second point P2 may be a point at which an interface at which the lower surface of the light blocking film LS and the upper surface of the first light transmitting portion LTA1 contact each other intersects with another side surface (e.g., left side surface) of the second light transmitting portion LTA2 adjacent (e.g., directly adjacent) to the second light transmitting portion LTA2 including the first point P1. The third point P3 may be a point at which an interface at which a side surface (e.g., a left side surface) of the light blocking film LS and a side surface (e.g., a right side surface) of the second light transmitting portion LTA2 including the second point P2 contact each other intersects an upper surface of the second light transmitting portion LTA2 including the second point P2.

The first triangle may be formed by the first point P1, the third point P3, and the first vertex Q1. The second triangle may be formed by the first point P1, the second point P2, and the second vertex Q2. The first vertex Q1 may be a point at which an interface where a side surface (e.g., a right side surface) of the second light transmitting portion LTA2 including the second point P2 and a side surface (e.g., a left side surface) of the first light transmitting portion LTA1 contact with a lower surface of the second light transmitting portion LTA2 including the second point P2. The second vertex Q2 may be a point at which an interface where the first light-transmitting portion LTA1 and the other side surface (e.g., left side surface) of the second light-transmitting portion LTA2 including the second point P2 contact intersects with the lower surface of the second light-transmitting portion LTA2 including the second point P2.

According to a rule of a similarity ratio between the first triangle and the second triangle, a ratio of the first distance DS1 to the first width W1 may be substantially equal to a ratio of a thickness lta1_h of the first light transmitting portion LTA1 to a thickness ls_h of the light blocking film LS.

In methods S10 and S20 (see fig. 16 and 22) for manufacturing a display device to be described below, the opening of the light blocking film LS in which the second light transmitting portion LTA2 is arranged and the opening of the first light transmitting portion LTA1 may be formed by a dry etching process. In the case where the thickness ls_h of the light blocking film LS and the thickness lta1_h of the first light transmitting portion LTA1 are designed to be large, not only etching takes a long time, but also the profile of the opening may not be vertically formed during the etching process, but may be formed as an arcuate profile. For example, a problem may occur in that the optical properties are different for each location of the light control layer LCL. In the case where the thickness ls_h of the light blocking film LS and the thickness lta1_h of the first light transmitting portion LTA1 are designed to be small, a desired viewing angle may not be achieved.

In the case where the first width W1 (e.g., the width lta2_w of the second light transmitting portion LTA 2) which is the width of the opening of the light blocking film LS and the width of the opening of the first light transmitting portion LTA1 is designed to be narrow, the outline of the opening may not be vertically formed during the etching process, but may be formed into an arcuate outline. For example, similarly, a problem may occur in that the optical characteristics are different for each position of the light control layer LCL. For example, there may occur a problem that transmittance and brightness may be reduced due to the narrowing of the width of the opening area OA. In the case where the first width W1 (for example, the width lta2_w of the second light transmitting portion LTA 2) which is the width of the opening of the light blocking film LS and the width of the opening of the first light transmitting portion LTA1 is designed to be wide, a desired viewing angle may not be achieved.

In the display device 10, by making the ratio of the thickness lta1_h of the first light transmitting portion LTA1 to the thickness ls_h of the light blocking film LS substantially equal to the ratio of the first distance DS1 to the first width W1, the viewing angle can be minimized and the optical characteristics of the light control layer LCL can be made uniform.

For example, according to the display device 10, since the light blocking film LS is not disposed in the opening of the light transmitting film LT, but the second light transmitting portion LTA2 is disposed in the opening of the light blocking film LS formed previously, in methods S10 and S20 (see fig. 16 and 22) for manufacturing the display device to be described below, a process of removing the light blocking film LS formed higher than the light transmitting film LT may not be performed. Accordingly, the process efficiency can be improved, and damage to the light-transmitting film LT can be prevented from occurring in the process of removing the light-blocking film LS.

Hereinafter, other embodiments of the display device will be described. In the following embodiments, the same components as those of the above embodiments will be denoted by the same reference numerals, and redundant description thereof will be omitted or simplified for descriptive convenience and differences will be described.

Fig. 8 is a schematic cross-sectional view of a light management layer according to an embodiment.

Referring to fig. 8, the display device 10 may be different from the display device 10 according to the embodiment described with reference to fig. 7 and the like in that the light-transmitting film LT further includes a third light-transmitting portion LTA3.

For example, the light-transmitting film LT of the display device 10 according to the embodiment may further include a third light-transmitting portion LTA3.

The third light transmitting portion LTA3 may be disposed on the light blocking film LS. The third light transmitting portion LTA3 may overlap the light blocking film LS in the third direction DR 3. The lower surface of the third light transmitting portion LTA3 may be in contact (e.g., direct contact) with the upper surface of the light blocking film LS. In the embodiment, the area of the lower surface of the third light transmitting portion LTA3 may be the same as the area of the upper surface of the light blocking film LS, but the embodiment is not limited thereto.

The third light-transmitting portion LTA3 may be disposed in the non-opening area LSA. The third light transmitting portion LTA3 may include openings arranged in the opening area OA. The third light transmitting portion LTA3 may surround at least a portion of the second light transmitting portion LTA2 disposed in the opening area OA.

The third light transmitting portion LTA3 may transmit light emitted from the display panel 100. The third light-transmitting portion LTA3 may include a transparent organic material. The third light transmitting portion LTA3 may be formed of a material different from that of the first and second light transmitting portions LTA1 and LTA 2. The third light-transmitting portion LTA3 may be an organic film or an inorganic film. For example, in the case where the third light-transmitting portion LTA3 is an organic film, the third light-transmitting portion LTA3 may be made of a photoresist. In the case where the third light-transmitting portion LTA3 is an inorganic film, the third light-transmitting portion LTA3 may be made of Transparent Conductive Oxide (TCO). For example, in the case where the third light-transmitting portion LTA3 is an inorganic film, the third light-transmitting portion LTA3 may be made of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

The third light transmitting portion LTA3 may have a refractive index substantially the same as that of the first and second light transmitting portions LTA1 and LTA 2. For example, the third light-transmitting portion LTA3 may have a refractive index in a range of about 1.1 to about 1.6. Accordingly, the light passing through the third light transmitting portion LTA3 may not be refracted, and may be incident and emitted at the same angle as that of the second light transmitting portion LTA 2.

The thickness lta3_h of the third light transmitting portion LTA3 may be smaller than the thickness lta1_h of the first light transmitting portion LTA 1. For example, the thickness lta3_h of the third light transmitting portion LTA3 may be several hundred nanometers to several micrometers. The thickness lta2_h of the second light transmitting portion LTA2 may be substantially equal to the sum of the thickness lta1_h of the first light transmitting portion LTA1, the thickness ls_h of the light blocking film LS, and the thickness lta3_h of the third light transmitting portion LTA 3.

The width lta3_w of the third light transmitting portion LTA3 disposed between the second light transmitting portions LTA2 may be substantially equal to the first distance DS1, which is the distance between the second light transmitting portions LTA2, the width lta1_w of the first light transmitting portion LTA1 disposed between the second light transmitting portions LTA2, and the width ls_w of the light blocking film LS disposed between the second light transmitting portions LTA 2. In an embodiment, the width lta3_w of the third light transmitting portion LTA3 disposed between the second light transmitting portions LTA2 may be about 1 μm to about 4 μm.

The display device 10 may have an opening of the light blocking film LS and an opening of the first light transmitting portion LTA1, which are formed by a dry etching process and are arranged with the second light transmitting portion LTA2, in methods S10 and S20 (see fig. 16 and 22) for manufacturing the display device to be described below. The third light transmitting portion LTA3 may be the same as the mask pattern layer MS (see fig. 18 and 24) used in the etching process. According to the display device 10, the process efficiency may be improved by leaving the mask pattern layer MS used in the etching process without removing it.

Fig. 9 is a schematic cross-sectional view of a light management layer according to an embodiment.

Referring to fig. 9, the display device 10 may be different from the display device 10 according to the embodiment described with reference to fig. 7 and the like in that the light control layer LCL may further include a light blocking pattern layer LSM.

For example, the light control layer LCL of the display device 10 according to an embodiment may further include a light blocking pattern layer LSM.

The light blocking pattern layer LSM may be disposed on the display panel 100. The light blocking pattern layer LSM may be in contact (e.g., direct contact) with the display panel 100. The light blocking pattern layer LSM may be positioned on the opposite side of the light blocking film LS with the first light transmitting portion LTA1 interposed between the light blocking pattern layer LSM and the light blocking film LS. The upper surface of the light blocking pattern layer LSM may be in contact (e.g., direct contact) with the lower surface of the first light transmitting portion LTA 1. In the embodiment, the area of the upper surface of the light blocking pattern layer LSM may be the same as the area of the lower surface of the first light transmitting portion LTA1, but the embodiment is not limited thereto.

The light blocking pattern layer LSM may be disposed in the non-opening area LSA. The light blocking pattern layer LSM may include openings arranged in the opening area OA. The light blocking pattern layer LSM may surround at least a portion of the second light transmitting portion LTA2 disposed in the opening of the opening area OA.

The light blocking pattern layer LSM may absorb or block light emitted from the display panel 100. The light blocking pattern layer LSM may be a metal pattern layer, and may include a light blocking metal material. For example, the light blocking pattern layer LSM may be a single layer or a plurality of layers including at least one of Mo, al, ti, W, ag, cu and Au.

The thickness lsm_h of the light blocking pattern layer LSM may be smaller than the thickness lta1_h of the first light transmitting portion LTA1. For example, the thickness lsm_h of the light blocking pattern layer LSM may be several hundred nanometers to several micrometers. The thickness lta2_h of the second light transmitting portion LTA2 may be substantially equal to the sum of the thickness lta1_h of the first light transmitting portion LTA1, the thickness ls_h of the light blocking film LS, and the thickness lsm_h of the light blocking pattern layer LSM.

The width lsm_w of the light blocking pattern layer LSM disposed between the second light transmitting portions LTA2 may be substantially equal to the first distance DS1, which is the distance between the second light transmitting portions LTA2, the width lta1_w of the first light transmitting portions LTA1 disposed between the second light transmitting portions LTA2, and the width ls_w of the light blocking film LS disposed between the second light transmitting portions LTA 2. In an embodiment, the light blocking pattern layer LSM disposed between the second light transmitting portions LTA2 may have a width lsm_w of about 1 μm to about 4 μm.

According to the display device 10, the viewing angle can be further reduced by additionally disposing the light blocking pattern layer LSM on the lower side of the first light transmitting portion LTA1.

Fig. 10 is a schematic cross-sectional view of a light management layer according to an embodiment.

Referring to fig. 10, the display device 10 may be different from the display device 10 according to the embodiment described with reference to fig. 7 and the like in that the light blocking film LS is positioned lower than the first light transmitting portion LTA1.

For example, the light blocking film LS may be disposed on the display panel 100. The light blocking film LS may be disposed between the display panel 100 and the first light transmitting portion LTA 1. The lower surface of the light blocking film LS may be in contact (e.g., direct contact) with the display panel 100. An upper surface of the light blocking film LS may be in contact (e.g., direct contact) with a lower surface of the first light transmitting portion LTA 1. In the embodiment, the area of the upper surface of the light blocking film LS may be the same as the area of the lower surface of the first light transmitting portion LTA1, but the embodiment is not limited thereto.

The first light transmitting portion LTA1 may be disposed on the light blocking film LS. The first light transmitting portion LTA1 may be positioned on opposite sides of the display panel 100, and the light blocking film LS is interposed between the first light transmitting portion LTA1 and the opposite sides of the display panel 100. The lower surface of the first light transmitting portion LTA1 may be in contact (e.g., direct contact) with the upper surface of the light blocking film LS. In the embodiment, the area of the lower surface of the first light transmitting portion LTA1 may be the same as the area of the upper surface of the light blocking film LS, but the embodiment is not limited thereto.

On the cross section shown in fig. 10, the first point P1 may be a point at which an interface at which the other side surface (e.g., left side surface) of the second light-transmitting portion LTA2 and the side surface (e.g., right side surface) of the light blocking film LS contact each other intersects with the lower surface of the second light-transmitting portion LTA 2. The second point P2 may be a point at which an interface at which the upper surface of the light blocking film LS and the lower surface of the first light transmitting portion LTA1 contact each other intersects a side surface (e.g., right side surface) of the second light transmitting portion LTA2 including the first point P1. The third point P3 may be a point at which an interface, at which a side surface (e.g., a right side surface) of the first light transmitting portion LTA1 and another side surface (e.g., a left side surface) of the second light transmitting portion LTA2 adjacent to the second light transmitting portion LTA2 including the second point P2 contact each other, intersects an upper surface of the second light transmitting portion LTA2 adjacent to the second light transmitting portion LTA2 including the second point P2.

The first triangle may be formed by the first point P1, the third point P3, and the first vertex Q1. The second triangle may be formed by the first point P1, the second point P2, and the second vertex Q2. The first vertex Q1 may be a point at which an interface contacting the other side surface (e.g., left side surface) of the second light transmitting portion LTA2 adjacent to the second light transmitting portion LTA2 including the second point P2 and the side surface (e.g., right side surface) of the light blocking film LS intersects the lower surface of the second light transmitting portion LTA2 adjacent to the second light transmitting portion LTA2 including the second point P2. The second vertex Q2 may be a point at which an interface where the side surface (e.g., right side surface) of the second light transmitting portion LTA2 including the second point P2 and the light blocking film LS contact intersects with the lower surface of the second light transmitting portion LTA2 including the second point P2.

Fig. 11 is a schematic cross-sectional view of a display panel and a light control layer according to an embodiment.

Referring to fig. 11, the display device 10 is different from the display device 10 according to the embodiment described with reference to fig. 6 and the like in that the first light transmitting portion LTA1 does not include an opening, and the second light transmitting portion LTA2 is positioned on the first light transmitting portion LTA 1.

For example, the first light transmitting portion LTA1 may not include the openings in the opening area OA. For example, the first light-transmitting portion LTA1 may be disposed throughout the entirety of the non-opening area LSA and the opening area OA.

The upper surface of the first light transmitting portion LTA1 may be in contact (e.g., direct contact) with the lower surface of the light blocking film LS. However, unlike the embodiment described with reference to fig. 6 and the like, since the first light-transmitting portion LTA1 does not include an opening, the area of the upper surface of the first light-transmitting portion LTA1 may be larger than the area of the lower surface of the light-blocking film LS.

Since the first light transmitting portion LTA1 does not include the openings arranged in the opening area OA, the first light transmitting portion LTA1 may not surround the side surface of the second light transmitting portion LTA2 unlike the embodiment described with reference to fig. 6 and the like. For example, the first light transmitting portion LTA1 may be in contact (e.g., direct contact) with only the lower surface of the second light transmitting portion LTA 2.

The second light transmitting portion LTA2 may be disposed on the first light transmitting portion LTA 1. The second light transmitting portion LTA2 may not be in direct contact with the display panel 100 and may be positioned on an opposite side of the display panel 100, while the first light transmitting portion LTA1 is interposed between the second light transmitting portion LTA2 and the opposite side of the display panel 100.

The second light transmitting portion LTA2 may be disposed inside an opening formed in the light blocking film LS (i.e., an opening of the light blocking film LS). The side surface of the second light transmitting portion LTA2 may contact the inner sidewall of the opening formed in the light blocking film LS (i.e., the opening of the light blocking film LS). The second light transmitting portion LTA2 may overlap the light blocking film LS in the first and second directions DR1 and DR2, and may not overlap the first light transmitting portion LTA 1.

The thickness lta2_h of the second light transmitting portion LTA2 may be the same as the thickness ls_h of the light blocking film LS. In an embodiment, the thickness lta2_h of the second light transmitting portion LTA2 may be about 10 μm to about 25 μm.

In the etching process of the method S20 (see fig. 22) for manufacturing a display device, which will be described below, the display device 10 may be manufactured by etching only the light blocking film LS without etching the first light transmitting portion LTA 1. Accordingly, since only the light blocking film LS is etched, process efficiency may be improved and an etching depth may be reduced to achieve a vertical profile.

Fig. 12 is a schematic perspective view of a display device according to an embodiment. Fig. 13 is a perspective view illustrating the fingerprint sensor of fig. 12. Fig. 14 is a schematic cross-sectional view taken along line II-II' of fig. 13. Fig. 15 is a schematic cross-sectional view illustrating the fingerprint sensor of fig. 14.

Referring to fig. 12 to 15, the display device 10 is different from the display device 10 according to the embodiment described with reference to fig. 1A and the like in that the display device 10 includes a fingerprint sensor 400 including a light control layer LCL.

For example, the display device 10 may include a display panel 100, a display driving circuit 200, a circuit board 300, and a fingerprint sensor 400.

The display panel 100 may include a main area MA and a sub-area SBA. The main area MA may include a display area DA displaying an image and a non-display area NDA which is a peripheral area of the display area DA. The display area DA may include display pixels for displaying an image. The non-display area NDA may be defined as an area from the outside of the display area DA to an edge portion of the display panel 100.

The display area DA may include a fingerprint sensing area FSA. The fingerprint sensing area FSA refers to an area in which the fingerprint sensor 400 is arranged. As shown in fig. 12, the fingerprint sensing area FSA may be a partial area of the display area DA, but the embodiment is not limited thereto. The fingerprint sensing area FSA may be the entire area of the display area DA and may be substantially the same as the display area DA.

The sub-area SBA is shown unfolded in fig. 12, but the sub-area SBA may be folded and the sub-area SBA may be arranged on the lower surface of the display panel 100. In the case where the sub-region SBA is folded, the sub-region SBA may overlap with the main region MA in the thickness direction of the substrate (e.g., in the third direction DR 3). The display driving circuit 200 may be arranged in the sub-region SBA.

The descriptions of the display driving circuit 200 and the circuit board 300 are the same as those of the embodiment described with reference to fig. 1A and the like, and thus will be omitted for descriptive convenience.

The fingerprint sensor 400 may be disposed on the lower surface of the display panel 100. The fingerprint sensor 400 may be attached to the lower surface of the display panel 100 by using a transparent adhesive member. For example, the transparent adhesive member may be a transparent adhesive film such as an Optically Clear Adhesive (OCA) film or a transparent adhesive resin such as an Optically Clear Resin (OCR).

The fingerprint sensor 400 may include a fingerprint sensing layer 410 (e.g., a light sensing layer) and a light control layer LCL.

The fingerprint sensing layer 410 may include sensor pixels arranged in a first direction DR1 and a second direction DR 2. Each of the sensor pixels may include a light sensing element through which a light sensing current flows according to an incident light, at least one transistor connected (e.g., electrically connected) to the light sensing element, and at least one capacitor connected (e.g., electrically connected) to the light sensing element or the transistor. The light sensing element may generate a sensing current according to incident light. The light sensing element may be a photodiode or a phototransistor.

The light control layer LCL may be disposed on the fingerprint sensing layer 410. The description of the light control layer LCL is the same as that of the embodiment described with reference to fig. 1A and the like, and thus will be omitted for descriptive convenience.

The fingerprint circuit board 500 may be arranged on the fingerprint sensing layer 410 not covered by the light control layer LCL. The fingerprint circuit board 500 may be attached to the upper surface of the fingerprint sensing layer 410 not covered by the light control layer LCL by using an anisotropic conductive film. As a result, the fingerprint circuit board 500 may be electrically connected to the sensor pixels of the fingerprint sensing layer 410. Accordingly, each of the sensor pixels of the fingerprint sensing layer 410 may output a sensing voltage according to a sensing current of the light sensing element through the fingerprint circuit board 500. The fingerprint driving circuit 510 electrically connected to the fingerprint circuit board 500 may recognize a fingerprint pattern of a finger according to a sensing voltage of the sensor pixel.

As shown in fig. 13, the fingerprint driving circuit 510 may be disposed on the fingerprint circuit board 500, but the embodiment is not limited thereto. The fingerprint driving circuit 510 may be arranged on a separate circuit board electrically connected with the fingerprint circuit board 500. The fingerprint circuit board 500 may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip-on-film.

Fig. 14 shows that the finger F of the user touches the display device 10 for fingerprint recognition.

Referring to fig. 14, the display device 10 may further include a cover window CW disposed on an upper surface of the display panel 100. The cover window CW may be disposed on an upper side of the display panel 100 so as to cover an upper surface of the display panel 100. The cover window CW may be used to protect the upper surface of the display panel 100. The cover window CW may be attached to the upper surface of the display panel 100 by using a transparent adhesive member.

The cover window CW may be made of a transparent material and may be glass or plastic. For example, in the case where the cover window CW is glass, the cover window CW may be ultra-thin glass (UTG) having a thickness of about 0.1mm or less. In the case where the cover window CW is plastic, the cover window CW may include a transparent polyimide film.

The fingerprint sensor 400 may be disposed on the lower surface of the display panel 100. The fingerprint sensor 400 may be attached to the lower surface of the display panel 100 by using a transparent adhesive member.

The fingerprint sensor 400 may include a fingerprint sensing layer 410 including sensor pixels SP and a light control layer LCL including a light blocking film LS and a light transmissive film LT. Each of the sensor pixels SP may at least partially overlap the opening area OA of the light control layer LCL in the third direction DR 3.

Each of the open areas OA of the light control layer LCL may be a channel through which light reflected from the ridges RID and valleys VAL of the fingerprint of the finger F is incident. In case that the user's finger F touches the cover window CW, light output from the display panel 100 may be reflected from ridges RID and valleys VAL of the finger F's fingerprint. Light reflected from the finger F may be incident on the sensor pixels SP of the fingerprint sensing layer 410 through the display panel 100 and the opening area OA of the light control layer LCL.

The range LR of light incident on the sensor pixel SP through the opening area OA of the light control layer LCL may be shorter than the distance FP between the ridge RID and the valley VAL of the finger F. The distance FP between the ridges RID and the valleys VAL of the fingerprint of the finger F may be about 500 μm. As a result, the sensing current flowing through the light sensing element of each of the sensor pixels SP may be different depending on whether light is reflected from the ridge RID of the fingerprint of the finger F or from the valley VAL of the fingerprint of the finger F. Accordingly, the sensing voltage output from the sensor pixel SP may be different depending on whether light is reflected from the ridge RID of the fingerprint of the finger F or the valley VAL of the fingerprint of the finger F. Accordingly, the fingerprint driving circuit 510 may recognize the fingerprint pattern of the finger F according to the sensing voltage of the sensor pixel SP.

Referring to fig. 15, a fingerprint sensor 400 may include a fingerprint sensing layer 410 and a light control layer LCL disposed on the fingerprint sensing layer 410.

The fingerprint sensing layer 410 may include sensor pixels SP that sense light. Each of the sensor pixels SP may include a second thin film transistor ST2 and a photo sensing element PD.

A buffer film BF may be disposed on the fingerprint sensor substrate FSUB. The fingerprint sensor substrate FSUB may be made of an insulating material such as a polymer resin. For example, the fingerprint sensor substrate FSUB may comprise polyimide. The fingerprint sensor substrate FSUB may be a flexible substrate that is bendable, foldable, rollable or the like.

The buffer film BF may be a film for protecting the thin film transistor (e.g., the second thin film transistor ST 2) and the photo-sensing element PD of the fingerprint sensing layer 410 from moisture penetrating through the fingerprint sensor substrate FSUB susceptible to moisture penetration. The buffer film BF may include inorganic films alternately stacked. For example, the buffer film BF may be formed as a multilayer in which one or more inorganic films of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

The second active layer ACT2 of the second thin film transistor ST2 may be disposed on the buffer film BF. The second active layer ACT2 of the second thin film transistor ST2 may include polycrystalline silicon (e.g., low temperature polycrystalline silicon), single crystal silicon, amorphous silicon, or an oxide semiconductor. The second active layer ACT2 of the second thin film transistor ST2, which is exposed without being covered by the second gate insulating film GI2, may be doped with impurities or ions, and thus may have conductivity. Accordingly, the second source electrode S2 and the second drain electrode D2 of the second active layer ACT2 of the second thin film transistor ST2 may be formed.

The second gate insulating film GI2 may be disposed on the second active layer ACT2 of the second thin film transistor ST 2. In fig. 15, the second gate insulating film GI2 is shown to be disposed between the second gate electrode G2 of the second thin film transistor ST2 and the second active layer ACT2 and between the first fingerprint capacitor electrode FCE1 and the buffer film BF, but the embodiment is not limited thereto. The second gate insulating film GI2 may also be disposed between the first insulating film INS1 and the second active layer ACT2 and between the first insulating film INS1 and the buffer film BF. The second gate insulating film GI2 may be formed as an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

The second gate electrode G2 of the second thin film transistor ST2 and the first fingerprint capacitor electrode FCE1 may be disposed on the second gate insulating film GI 2. The second gate electrode G2 of the second thin film transistor ST2 may overlap the second active layer ACT2 in the third direction DR 3. The second gate electrode G2 and the first fingerprint capacitor electrode FCE1 of the second thin film transistor ST2 may be formed as a single layer or a plurality of layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

The first insulating film INS1 may be disposed on the second gate electrode G2 of the second thin film transistor ST2 and the first fingerprint capacitor electrode FCE 1. The first insulating film INS1 may be formed as an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first insulating film INS1 may include an inorganic film.

The photo-sensing element PD and the second finger capacitor electrode FCE2 may be disposed on the first insulating film INS 1. The second fingerprint capacitor electrode FCE2 may overlap the first fingerprint capacitor electrode FCE1 in the third direction DR 3. Since the first insulating film INS1 has a specific dielectric constant, a capacitor may be formed of the first fingerprint capacitor electrode FCE1, the second fingerprint capacitor electrode FCE2, and the first insulating film INS1 disposed between the first fingerprint capacitor electrode FCE1 and the second fingerprint capacitor electrode FCE 2.

The light sensing element PD may be formed as a photodiode as shown in fig. 15, but the embodiment is not limited thereto. The photo-sensing element PD may be formed as a phototransistor. The photo-sensing element PD may include a first sensing electrode PCE, a photo-sensing semiconductor layer PSEM, and a second sensing electrode PAE. The first sensing electrode PCE may be a cathode, and the second sensing electrode PAE may be an anode.

The first sensing electrode PCE may be disposed on the first insulating film INS 1. The first sensing electrode PCE and the second finger capacitor electrode FCE2 may be formed of the same material. The first sensing electrode PCE and the second finger capacitor electrode FCE2 may be formed as a single layer made of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or as a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO/APC/ITO).

The photo-sensing semiconductor layer PSEM may be disposed on the first sensing electrode PCE. The light sensing semiconductor layer PSEM may be formed in a PIN structure in which a P-type semiconductor layer PL, an I-type semiconductor layer IL, and an N-type semiconductor layer NL are sequentially stacked. In the case where the light sensing semiconductor layer PSEM is formed in a PIN structure, the I-type semiconductor layer IL may be depleted by the P-type semiconductor layer PL and the N-type semiconductor layer NL, and an electric field may be generated therein, and holes and electrons generated by sunlight may drift through the electric field. As a result, holes may be collected to the second sensing electrode PAE through the P-type semiconductor layer PL, and electrons may be collected to the first sensing electrode PCE through the N-type semiconductor layer NL.

The P-type semiconductor layer PL may be disposed close to a surface on which external light is incident, and the N-type semiconductor layer NL may be disposed away from the surface on which external light is incident. Since drift mobility of holes is low due to drift mobility of electrons, the P-type semiconductor layer PL may be formed close to an incident surface of external light in order to maximize efficiency of collecting incident light.

An N-type semiconductor layer NL may be disposed on the first sensing electrode PCE, an I-type semiconductor layer IL may be disposed on the N-type semiconductor layer NL, and a P-type semiconductor layer PL may be disposed on the I-type semiconductor layer IL. For example, the P-type semiconductor layer PL may be formed by doping amorphous silicon (a-Si: H) with a P-type dopant. The type I semiconductor layer IL may be formed of amorphous silicon germanium (a-SiGe: H) or amorphous silicon carbide (a-SiC: H). The N-type semiconductor layer NL may be formed by doping amorphous silicon germanium (a-SiGe: H) or amorphous silicon carbide (a-SiC: H) with an N-type dopant. The P-type semiconductor layer PL and the N-type semiconductor layer NL may be formed to have aboutAnd the I-type semiconductor layer IL may be formed to have a thickness of about +.>To about->Is a thickness of (c).

In another example, the N-type semiconductor layer NL may be disposed on the first sensing electrode PCE, the I-type semiconductor layer IL may be omitted, and the P-type semiconductor layer PL may be disposed on the N-type semiconductor layer NL. For example, the P-type semiconductor layer PL may be formed by doping amorphous silicon (a-Si: H) with a P-type dopant. The N-type semiconductor layer NL may be formed by doping amorphous silicon germanium (a-SiGe: H) or amorphous silicon carbide (a-SiC: H) with an N-type dopant. P-type semiconductor layer PL and N-type semiconductor layer NL may be formed to have aboutIs a thickness of (c).

For example, an upper surface or a lower surface of at least one of the first sensing electrode PCE, the P-type semiconductor layer PL, the I-type semiconductor layer IL, the N-type semiconductor layer NL, and the second sensing electrode PAE may be formed in a concave-convex structure through a texturing process to increase an absorptivity of external light. The texturing process can form the surface of the material into an uneven concave-convex structure, which is a process for processing the same shape as the surface of the fabric. The texturing process may be performed by an etching process using photolithography, an anisotropic etching process using a chemical solution, or a groove forming process using mechanical scribing.

The second sensing electrode PAE may be disposed on the P-type semiconductor layer PL. The second sensing electrode PAE may be formed of Transparent Conductive Oxide (TCO) such as Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO) capable of transmitting light.

A second insulating film INS2 may be disposed on the photo-sensing element PD and the second finger capacitor electrode FCE 2. The second insulating film INS2 may be formed as an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second insulating film INS2 may include an inorganic film.

The first, second and third connection electrodes CE1, CE2 and CE3 may be disposed on the second insulating film INS2.

The first connection electrode CE1 may be connected (e.g., electrically connected) to the second source electrode S2 of the second thin film transistor ST2 through a source contact hole SCT penetrating through the first and second insulating films INS1 and INS2 and exposing the second source electrode S2 of the second thin film transistor ST 2.

The second connection electrode CE2 may be connected (e.g., electrically connected) to the second drain electrode D2 of the second thin film transistor ST2 through a drain contact hole DCT that penetrates the first insulating film INS1 and the second insulating film INS2 and exposes the second drain electrode D2 of the second thin film transistor ST 2. The second connection electrode CE2 may be connected (e.g., electrically connected) to the first sensing electrode PCE by penetrating the second insulating film INS2 and exposing the first sensing contact hole RCT1 of the first sensing electrode PCE. As a result, the second drain electrode D2 of the second thin film transistor ST2 and the first sensing electrode PCE of the photo sensing element PD may be connected (e.g., electrically connected) through the second connection electrode CE 2.

The third connection electrode CE3 may be connected (e.g., electrically connected) to the second sensing electrode PAE through a second sensing contact hole RCT2 penetrating the second insulating film INS2 and exposing the second sensing electrode PAE.

The first, second and third connection electrodes CE1, CE2 and CE3 may be formed of a single layer or a plurality of layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

A third insulating film INS3 may be disposed on the first, second, and third connection electrodes CE1, CE2, and CE 3. The third insulating film INS3 may be formed as an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The third insulating film INS3 may include an inorganic film. In another example, the third insulating film INS3 may be omitted.

A planarization film PLA may be disposed on the third insulating film INS3. The planarization film PLA may be formed as an organic film such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.

The description of the light control layer LCL is the same as in the above-described embodiments, and thus will be omitted for descriptive convenience. In fig. 15, a case where the fingerprint sensor 400 includes the light control layer LCL according to the embodiment of fig. 7 is described as an example, but the embodiment is not limited thereto. The fingerprint sensor 400 is not limited to any one of all light control layers LCL according to the above-described embodiments.

As in the embodiments described above, the light control layer LCL may be disposed (e.g., directly disposed) on the display panel 100, and the light control layer LCL may also be disposed on the fingerprint sensing layer 410 in the fingerprint sensor 400.

Since the fingerprint sensor 400 of the display device 10 includes the light control layer LCL of the above-described embodiment, noise light can be removed and thus fingerprint recognition accuracy can be improved.

Hereinafter, a method for manufacturing a display device will be described.

Fig. 16 is a flowchart illustrating a method for manufacturing a display device according to an embodiment. Fig. 17 is a schematic cross-sectional view illustrating step S100 of fig. 16. Fig. 18 is a schematic cross-sectional view illustrating step S200 of fig. 16. Fig. 19 is a schematic cross-sectional view illustrating step S300 of fig. 16. Fig. 20 is a schematic cross-sectional view illustrating step S400 of fig. 16. Fig. 21 is a schematic cross-sectional view illustrating step S500 of fig. 16.

Fig. 16 to 21 are schematic views showing a method S10 for manufacturing the display device 10 according to the embodiment described with reference to fig. 1A and the like.

Referring to fig. 16 to 21, a method S10 for manufacturing a display device according to an embodiment may include: preparing (e.g., providing) a display panel 100 including a light emitting element layer (step S100); forming a light-transmitting layer LTL on the display panel 100, forming a light-blocking layer LSL on the light-transmitting layer LTL and forming a mask pattern layer MS on the light-blocking layer LSL (step S200); forming a light blocking film LS and a first light transmitting portion LTA1 by etching the light blocking layer LSL and the light transmitting layer LTL (step S300); removing the mask pattern layer MS (step S400); and forming a second light-transmitting portion LTA2 (step S500).

In the step of preparing the display panel 100 including the light emitting element layer (step S100), the display panel 100 may be prepared. The description of the display panel 100 is the same as that in the above-described embodiment, and thus will be omitted for descriptive convenience.

In the steps of forming the light-transmitting layer LTL on the display panel 100, forming the light-blocking layer LSL on the light-transmitting layer LTL, and forming the mask pattern layer MS on the light-blocking layer LSL (step S200), the light-transmitting layer LTL, the light-blocking layer LSL, and the mask pattern layer MS may be formed on the display panel 100.

The light-transmitting layer LTL may be formed by depositing a transparent organic material on the display panel 100. The light-transmitting layer LTL may have a thickness of about 2 μm to about 8 μm. The light-transmitting layer LTL may include an organic film made of acryl resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, or the like.

The light blocking layer LSL may be formed by depositing a light blocking organic material on the light transmitting layer LTL. The light blocking layer LSL may have a thickness of about 10 μm to about 25 μm. The light blocking layer LSL may include an organic material containing an organic black pigment such as carbon black as a photosensitive resin capable of absorbing or blocking light.

The mask pattern layer MS may be formed by depositing an organic material or an inorganic material on the light blocking layer LSL. The mask pattern layer MS may be an organic film such as a photoresist. In another example, the mask pattern layer MS may be a Transparent Conductive Oxide (TCO) such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) and a metal film such as aluminum (Al).

In the step of forming the light blocking film LS and the first light transmitting portion LTA1 by etching the light blocking layer LSL and the light transmitting layer LTL (step S300), the light blocking film LS and the first light transmitting portion LTA1 may be formed by etching the light blocking layer LSL and the light transmitting layer LTL.

The light blocking film LS may be formed by dry etching the light blocking layer LSL not covered by the mask pattern layer MS. A plurality of openings arranged in the row direction and the column direction may be formed in the light blocking layer LSL.

After etching the light blocking layer LSL, the first light transmitting portion LTA1 may be formed by dry etching the light transmitting layer LTL not covered by the mask pattern layer MS and the light blocking film LS. A plurality of openings arranged in the row direction and the column direction may be formed in the first light transmitting portion LTA1.

In the step of removing the mask pattern layer MS (step S400), the mask pattern layer MS may be removed through a lift-off process or an etching process. In some embodiments, the mask pattern layer MS may not be removed. For example, as in the display device 10 of the embodiment described with reference to fig. 8 and the like, the display device 10 may further include a third light-transmitting portion LTA3 (see fig. 8).

In the step of forming the second light-transmitting portion LTA2 (step S500), the second light-transmitting portion LTA2 may be formed by filling or depositing a transparent organic material.

The second light-transmitting portion LTA2 may be formed by filling or depositing a transparent organic material in an opening formed in the light-blocking film LS (i.e., an opening of the light-blocking film LS) and an opening formed in the first light-transmitting portion LTA1 (i.e., an opening of the first light-transmitting portion LTA 1). The second light transmitting portions LTA2 may be arranged to be spaced apart from each other along the first and second directions DR1 and DR 2. The side surface of the second light transmitting portion LTA2 may be surrounded by the light blocking film LS and the first light transmitting portion LTA 1.

The second light transmitting portion LTA2 and the first light transmitting portion LTA1 may be formed of the same material. The first light-transmitting portion LTA1 and the second light-transmitting portion LTA2 may form an integrated light-transmitting film LT.

According to the method S10 for manufacturing a display device, by forming the second light-transmitting portion LTA2 inside the opening of the previously formed light-blocking film LS instead of forming the opening in the light-transmitting film LT and forming the light-blocking film LS inside the opening, a process of removing the light-blocking film LS formed higher than the light-transmitting film LT may not be performed. Accordingly, the process efficiency can be improved, and damage to the light-transmitting film LT can be prevented from occurring in the process of removing the light-blocking film LS.

Fig. 22 is a flowchart illustrating a method for manufacturing a display device according to an embodiment. Fig. 23 is a schematic cross-sectional view illustrating step S100 of fig. 22. Fig. 24 is a schematic cross-sectional view illustrating step S200 of fig. 22. Fig. 25 is a schematic cross-sectional view illustrating step S300 of fig. 22. Fig. 26 is a schematic cross-sectional view illustrating step S400 of fig. 22. Fig. 27 is a schematic cross-sectional view illustrating step S500 of fig. 22.

Fig. 22 to 27 are schematic views illustrating a method S20 for manufacturing the display device 10 according to the embodiment described with reference to fig. 11.

Referring to fig. 22 to 27, a method S20 for manufacturing a display device according to an embodiment may include: preparing (e.g., providing) a display panel 100 including a light emitting element layer (step S100); forming a first light-transmitting portion LTA1 on the display panel 100, forming a light-blocking layer LSL on the first light-transmitting portion LTA1 and forming a mask pattern layer MS on the light-blocking layer LSL (step S200); forming a light blocking film LS by etching the light blocking layer LSL (step S300); removing the mask pattern layer MS (step S400); and forming a second light-transmitting portion LTA2 (step S500).

In the step of forming the first light transmitting portion LTA1 on the display panel 100, forming the light blocking layer LSL on the first light transmitting portion LTA1, and forming the mask pattern layer MS on the light blocking layer LSL (step S200), the first light transmitting portion LTA1, the light blocking layer LSL, and the mask pattern layer MS may be formed on the display panel 100.

The first light transmitting portion LTA1 may be formed by depositing a transparent organic material on the display panel 100. The first light-transmitting portion LTA1 may have a thickness of about 2 μm to about 8 μm. The first light transmitting portion LTA1 may include an organic film made of acryl resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, or the like.

The light blocking layer LSL may be formed by depositing a light blocking organic material on the first light transmitting portion LTA1. The light blocking layer LSL may have a thickness of about 10 μm to about 25 μm. The light blocking layer LSL may include an organic material containing an organic black pigment such as carbon black as a photosensitive resin capable of absorbing or blocking light.

In the step of forming the light blocking film LS by etching the light blocking layer LSL (step S300), the light blocking film LS may be formed by etching the light blocking layer LSL.

In the method S20 for manufacturing a display device, unlike the method S10 for manufacturing a display device according to the embodiment described with reference to fig. 16 and the like, the first light transmitting portion LTA1 may not be etched. Accordingly, the first light transmitting portion LTA1 may overlap the light blocking film LS in the thickness direction.

The second light transmitting portion LTA2 may be formed by filling or depositing a transparent organic material in an opening formed in the light blocking film LS (i.e., an opening of the light blocking film LS). The second light transmitting portions LTA2 may be arranged to be spaced apart from each other along the first and second directions DR1 and DR 2. The side surface of the second light transmitting portion LTA2 may be surrounded by a light blocking film LS.

In the method S20 for manufacturing a display device, unlike the method S10 for manufacturing a display device according to an embodiment described with reference to fig. 16 and the like, the second light transmitting portion LTA2 may be disposed on the first light transmitting portion LTA1 because the first light transmitting portion LTA1 is not etched.

The second light transmitting portion LTA2 may be formed of the same material as the first light transmitting portion LTA 1. The first light-transmitting portion LTA1 and the second light-transmitting portion LTA2 may form an integrated light-transmitting film LT.

According to the method S20 for manufacturing a display device, since only the light blocking layer LSL is etched without etching the first light transmitting portion LTA1 in the etching process, process efficiency may be improved and an etching depth may be reduced to achieve a vertical profile.

At the conclusion of the detailed description, those skilled in the art will appreciate that many changes and modifications can be made to the embodiments without materially departing from the principles of the invention. Accordingly, the disclosed embodiments of the invention are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

1. A display device, comprising:

a substrate;

a light emitting element layer disposed on the substrate and including a plurality of light emitting regions each including a light emitting element that emits light;

an encapsulation layer disposed on the light emitting element layer; and

a light management layer disposed on the encapsulation layer,

wherein the optical control layer comprises:

A light-transmitting film that transmits the light; and

a light blocking film that blocks the light, an

The light-transmitting film includes:

a first light-transmitting portion overlapping the light-blocking film in a thickness direction of the substrate; and

a plurality of second light-transmitting portions each surrounded by the light blocking film, and

the thickness of the light blocking film is greater than the thickness of the first light transmitting portion.

2. The display device according to claim 1, wherein a first width that is a width of each of the plurality of second light-transmitting portions in a first direction is larger than a first distance that is a distance between two adjacent second light-transmitting portions in the first direction among the plurality of second light-transmitting portions.

3. The display device according to claim 2, wherein a ratio of the first distance to the first width is equal to a ratio of the thickness of the first light-transmitting portion to the thickness of the light-blocking film.

4. A display device according to claim 3, wherein the ratio of the first distance to the first width is 1:9 to 2:3.

5. The display device according to claim 3, wherein,

The first width is 6 to 9 μm and

the first distance is 1 μm to 4 μm.

6. The display device according to claim 3, wherein,

the thickness of the light blocking film is 10 μm to 25 μm, and

the thickness of the first light-transmitting portion is 2 μm to 8 μm.

7. The display device according to claim 1, wherein the light-transmitting film has a refractive index in a range of 1.1 to 1.6.

8. The display device according to claim 1, wherein,

the light blocking film comprises a light blocking organic material, and

the light-transmitting film includes a transparent organic material.

9. The display device according to claim 1, the light-transmitting film further comprising a third light-transmitting portion,

wherein the third light-transmitting portion is arranged on the light-blocking film and overlaps the light-blocking film in the thickness direction of the substrate.

10. The display device according to claim 9, wherein the third light-transmitting portion is made of a photoresist or a transparent conductive oxide.

11. The display device according to claim 1, wherein the thickness of the light blocking film is smaller than the thickness of each of the plurality of second light transmitting portions.

12. The display device of claim 1, further comprising a touch layer,

Wherein the touch layer is disposed between the encapsulation layer and the light control layer and comprises a plurality of touch electrodes, an

The light blocking film overlaps the plurality of touch electrodes in the thickness direction of the substrate.

13. The display device of claim 1, the light management layer further comprising a plurality of light blocking pattern layers,

wherein each of the plurality of light blocking pattern layers overlaps the light blocking film in the thickness direction of the substrate, and

the plurality of light blocking pattern layers are positioned on opposite sides of the light blocking film, and the first light transmitting portion is disposed between the plurality of light blocking pattern layers and the opposite sides of the light blocking film.

14. The display device of claim 13, wherein the plurality of light blocking pattern layers comprises at least one of Mo, al, ti, W, ag, cu and Au.

15. The display device according to claim 1, wherein the light blocking film does not overlap with the plurality of light emitting regions in the thickness direction of the substrate.

16. A method for manufacturing a display device, the method comprising:

providing a display panel including a light emitting element layer;

forming a light-transmitting layer on the display panel;

Forming a light blocking layer on the light transmitting layer;

forming a mask pattern layer on the light blocking layer;

forming a light blocking film and a first light transmitting portion each including an opening by etching the light blocking layer and the light transmitting layer using the mask pattern layer;

removing the mask pattern layer; and

a plurality of second light-transmitting portions are formed by filling or depositing an organic material in the openings of the light blocking film and the openings of the first light-transmitting portions.

17. The method of claim 16, wherein the first light transmissive portion overlaps the light blocking film and does not overlap each of the plurality of second light transmissive portions.

18. A method for manufacturing a display device, the method comprising:

providing a display panel including a light emitting element layer;

forming a first light-transmitting portion on the display panel;

forming a light blocking layer on the first light transmitting portion;

forming a mask pattern layer on the light blocking layer;

forming a light blocking film including an opening by etching the light blocking layer using the mask pattern layer;

removing the mask pattern layer; and

a plurality of second light transmitting portions are formed by filling or depositing an organic material in the openings of the light blocking film.

19. The method of claim 18, wherein the first light-transmitting portion overlaps each of the plurality of second light-transmitting portions and overlaps the light-blocking film.

20. A fingerprint sensor, comprising:

a light sensing layer including a light sensing element generating a sensing current according to incident light; and

a light control layer disposed over the light sensing layer,

wherein the optical control layer comprises:

a plurality of first light-transmitting portions spaced apart from each other;

a plurality of light blocking films overlapping the plurality of first light transmitting portions in a thickness direction, respectively; and

a plurality of second light-transmitting portions arranged between the plurality of first light-transmitting portions and between the plurality of light-blocking films, an

The thickness of each of the plurality of light blocking films is greater than the thickness of each of the plurality of first light transmitting portions.