TWI581684B - The preparation method of the copper foil, the method of making the copper clad sheet, the manufacturing method of the printed wiring board, the manufacturing method of the electronic machine, and the like - Google Patents

The preparation method of the copper foil, the method of making the copper clad sheet, the manufacturing method of the printed wiring board, the manufacturing method of the electronic machine, and the like Download PDF

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TWI581684B
TWI581684B TW104126677A TW104126677A TWI581684B TW I581684 B TWI581684 B TW I581684B TW 104126677 A TW104126677 A TW 104126677A TW 104126677 A TW104126677 A TW 104126677A TW I581684 B TWI581684 B TW I581684B
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carrier
layer
copper foil
ultra
copper
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TW104126677A
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TW201618619A (en
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Terumasa Moriyama
Tomota Nagaura
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Jx Nippon Mining & Metals Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H05K3/025Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/384Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0147Carriers and holders
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0264Peeling insulating layer, e.g. foil, or separating mask
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

附載體銅箔之製法、覆銅積層板之製法、印刷配線板之製法、電子機器之製法及其等之製品 Method for preparing carrier copper foil, method for manufacturing copper-clad laminate, method for manufacturing printed wiring board, method for manufacturing electronic device, and the like

本發明係關於一種附載體銅箔之製造方法、覆銅積層板之製造方法、印刷配線板之製造方法、及電子機器之製造方法、附載體銅箔、積層體、印刷配線板以及電子機器。 The present invention relates to a method for producing a copper foil with a carrier, a method for producing a copper clad laminate, a method for producing a printed wiring board, a method for producing an electronic device, a copper foil with a carrier, a laminate, a printed wiring board, and an electronic device.

印刷配線板通常經下述步驟而製造:於使絕緣基板與銅箔接著而製成覆銅積層板之後,藉由蝕刻而於銅箔面形成導體圖案。隨著近年來電子機器之小型化、高性能化需求之增大而推展搭載零件之高密度構裝化或訊號之高頻化,從而對印刷配線板要求有導體圖案之細微化(窄間距化)或高頻應對等。 The printed wiring board is usually produced by forming a conductor pattern on the copper foil surface by etching after the insulating substrate and the copper foil are bonded to each other to form a copper clad laminate. In recent years, with the increase in the demand for miniaturization and high performance of electronic devices, high-density mounting of components and high-frequency signals have been promoted, and wiring patterns have been required to be fine-grained (narrow pitch). ) or high frequency response.

與窄間距化相對應,近來要求厚度在9μm以下、甚至是厚度在5μm以下的銅箔,然而,這種極薄之銅箔其機械強度低,在印刷配線板之製造時易破裂或產生皺摺,因此發展出將具有厚度的金屬箔用作為載體並隔著剝離層將極薄銅層電沉積於其上而成的附載體銅箔。於將極薄銅層的表面貼合於絕緣基板並進行熱壓接後,經由剝離層將載體剝離去除。於所露出之極薄銅層上藉由抗蝕劑而形成電路圖案後,利用硫酸-過氧化 氫系蝕刻液來蝕刻去除極薄銅層,藉由此手法(MSAP:Modified-Semi-Additive-Process)來形成細微電路。 Corresponding to narrow pitching, copper foils having a thickness of 9 μm or less and even a thickness of 5 μm or less have recently been required. However, such extremely thin copper foils have low mechanical strength and are easily broken or wrinkled during the manufacture of printed wiring boards. Therefore, a copper foil with a carrier having a thickness of a metal foil as a carrier and electrodepositing an extremely thin copper layer thereon via a peeling layer was developed. After bonding the surface of the ultra-thin copper layer to the insulating substrate and thermocompression bonding, the carrier is peeled off by the peeling layer. Sulfuric acid-peroxidation after forming a circuit pattern on the exposed ultra-thin copper layer by a resist The hydrogen-based etching solution is used to etch away the ultra-thin copper layer, and a fine circuit is formed by the method (MSAP: Modified-Semi-Additive-Process).

此處,對於成為與樹脂之接著面的附載體銅箔之極薄銅層的表面主要要求極薄銅層與樹脂基材之剝離強度充足,且此剝離強度於高温加熱、溼式處理、焊接、化學藥劑處理等之後亦保持為充足。提高極薄銅層與樹脂基材間的剝離強度之方法,一般而言係以下述方法為代表:使大量的粗化粒子附著於表面之輪廓(凹凸、粗糙)增大後的極薄銅層上。 Here, the surface of the ultra-thin copper layer which is the copper foil with a carrier which is the adhesive surface of the resin is required to have sufficient peeling strength of the ultra-thin copper layer and the resin substrate, and the peel strength is high-temperature heating, wet processing, and soldering. After chemical treatment, etc., it is also sufficient. The method for increasing the peel strength between the ultra-thin copper layer and the resin substrate is generally represented by the following method: a very thin copper layer having a large number of roughened particles attached to the surface (concavity, roughness, and roughness) on.

然而,即便是在印刷配線板中,若於具有形成特別細微之電路圖案之需要的半導體封裝基板使用這種輪廓(凹凸、粗糙)大的極薄銅層,則於電路蝕刻時會殘留不需要之銅粒子,會產生電路圖案間之絕緣不良等問題。 However, even in a printed wiring board, if a very thin copper layer having a large profile (concavity, roughness, and roughness) is used for a semiconductor package substrate having a particularly fine circuit pattern, it is not necessary to be left in the circuit etching. The copper particles cause problems such as poor insulation between circuit patterns.

因此,於WO2004/005588號(專利文獻1)中嘗試了使用未於極薄銅層之表面施加粗化處理的附載體銅箔作為以半導體封裝基板為首之用於細微電路的附載體銅箔。由於其低輪廓(凹凸、粗糙度、粗糙)的影響,這種未施加粗化處理的極薄銅層與樹脂之密合性(剝離強度)與一般之印刷配線板用銅箔相比,有降低之傾向。因此,要求對附載體銅箔作進一步之改善。 Therefore, in WO2004/005588 (Patent Document 1), a copper foil with a carrier which is not subjected to a roughening treatment on the surface of the ultra-thin copper layer is attempted as a carrier-attached copper foil for a fine circuit including a semiconductor package substrate. Due to the influence of the low profile (concavity, roughness, roughness), the adhesion between the ultra-thin copper layer which is not subjected to the roughening treatment and the resin (peeling strength) is compared with that of a general copper foil for a printed wiring board. Reduce the tendency. Therefore, it is required to further improve the copper foil with a carrier.

因此,於日本特開2007-007937號公報(專利文獻2)及日本特開2010-006071號公報(專利文獻3)中,記載有於附載體極薄銅箔之與聚醯亞胺系樹脂基板接觸(接著)的面,設置Ni層或/及Ni合金層、設置鉻酸鹽層、設置Cr層或/及Cr合金層、設置Ni層及鉻酸鹽層、設置Ni層及Cr層。藉由設置該等表面處理層,聚醯亞胺系樹脂基板與附載體極 薄銅箔之密合強度可不經粗化處理或是降低粗化處理之程度(細微化)即可得到所欲之接著強度。此外,亦記載有利用矽烷偶合劑來進行表面處理或施加防銹處理。 In JP-A-2007-007937 (Patent Document 2) and JP-A-2010-006071 (Patent Document 3), the present invention discloses a polyimide-based resin substrate with an ultra-thin copper foil attached thereto. The surface of the contact (subsequent) is provided with a Ni layer or/and a Ni alloy layer, a chromate layer, a Cr layer or/and a Cr alloy layer, a Ni layer and a chromate layer, and a Ni layer and a Cr layer. By providing the surface treatment layer, the polyimide substrate and the carrier are provided The adhesion strength of the thin copper foil can be obtained without the roughening treatment or the degree of roughening treatment (fineness) to obtain the desired bonding strength. Further, surface treatment or rust-preventing treatment using a decane coupling agent is also described.

[專利文獻1]WO2004/005588號 [Patent Document 1] WO2004/005588

[專利文獻2]日本特開2007-007937號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-007937

[專利文獻3]日本特開2010-006071號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2010-006071

於附載體銅箔之開發中,至今為止確保極薄銅層與樹脂基材之剝離強度一直被視為重點。因此,仍未對極薄銅層之電路形成性進行充分探討,其仍有改善之空間。 In the development of the carrier-attached copper foil, the peel strength of the ultra-thin copper layer and the resin substrate has been considered as the focus until now. Therefore, the circuit formation of the ultra-thin copper layer has not been fully explored, and there is still room for improvement.

對極薄銅層形成電路,通常係以下述方式進行:於將極薄銅層積層於樹脂基材後去除載體,然後,於在極薄銅層上設置有特定圖案之光阻的狀態下,利用特定之蝕刻液進行蝕刻處理,去除未被光阻覆蓋之部分的銅層。之後,藉由去除光阻,製作具有所欲之導體圖案的電路。 The circuit for forming an ultra-thin copper layer is usually performed by laminating an ultra-thin copper layer on a resin substrate, and then removing the carrier under a photoresist having a specific pattern on the ultra-thin copper layer. An etching process is performed using a specific etching solution to remove a copper layer that is not covered by the photoresist. Thereafter, a circuit having a desired conductor pattern is formed by removing the photoresist.

此處,於利用特定之蝕刻液進行蝕刻處理時,若極薄銅層之與樹脂基材的界面附近部分對於蝕刻液的潤濕性差,則蝕刻液之潤濕範圍不足。於此情形,與樹脂基材之界面附近部分會產生蝕刻不均勻之部分,電路直線性變得不良。本發明提供對於極薄銅層之電路形成性良好的附載體銅箔之製造方法。又,提供蝕刻液之潤濕性良好的附載體銅箔。 Here, when the etching treatment is performed by using a specific etching liquid, if the wettability of the portion near the interface between the ultra-thin copper layer and the resin substrate is poor, the wettability range of the etching liquid is insufficient. In this case, a portion where the etching is uneven in the vicinity of the interface with the resin substrate causes the circuit linearity to become poor. The present invention provides a method for producing a copper foil with a carrier which is excellent in circuit formation properties for an extremely thin copper layer. Further, a copper foil with a carrier having good wettability of the etching liquid is provided.

以上述見解為基礎所完成之本發明於一態樣中,係一種附載 體銅箔之製造方法,其包含下述加熱處理步驟:對依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層的附載體銅箔,進行1小時~8小時之加熱溫度為100℃~220℃的加熱處理,或1小時~6小時之加熱溫度為100℃~220℃的加熱處理,或2小時~4小時之加熱溫度為160℃~220℃的加熱處理。 The invention completed on the basis of the above findings is a kind of attachment A method for producing a bulk copper foil comprising the step of heat-treating a carrier-attached copper foil having a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer containing a decane coupling treatment layer in this order for 1 hour to 8 hours. The heating temperature is 100 ° C ~ 220 ° C heat treatment, or 1 hour ~ 6 hours heating temperature is 100 ° C ~ 220 ° C heat treatment, or 2 hours ~ 4 hours heating temperature 160 ° C ~ 220 ° C heat treatment .

本發明於另一個態樣中,係一種附載體銅箔之製造方法,其包含下述加熱處理步驟:對依序具備載體、中間層、極薄銅層、表面處理層的附載體銅箔,將到達加熱溫度為止的升溫速度設為超過50℃/小時,進行1小時~8小時之加熱溫度為100℃~220℃的加熱處理,或1小時~6小時之加熱溫度為100℃~220℃的加熱處理,或2小時~4小時之加熱溫度為160℃~220℃的加熱處理。 In another aspect, the present invention provides a method for producing a copper foil with a carrier, comprising the following heat treatment step: a carrier copper foil with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer; The heating rate until reaching the heating temperature is more than 50 ° C / hour, and the heating temperature is from 100 ° C to 220 ° C for 1 hour to 8 hours, or the heating temperature is from 100 ° C to 220 ° C for 1 hour to 6 hours. The heat treatment, or the heating temperature of 2 hours to 4 hours, is 160 ° C ~ 220 ° C heat treatment.

本發明之附載體銅箔之製造方法於一實施形態中,上述加熱處理中之上述升溫速度為200℃/小時以下。 In the method for producing a copper foil with a carrier according to the present invention, in the embodiment, the temperature increase rate in the heat treatment is 200 ° C /hr or less.

本發明之附載體銅箔之製造方法於另一實施形態中,上述加熱處理步驟後於常溫下所測得之載體的拉伸強度為300MPa以上。 In another embodiment of the method for producing a copper foil with a carrier according to the present invention, the tensile strength of the carrier measured at room temperature after the heat treatment step is 300 MPa or more.

本發明之附載體銅箔之製造方法於再另一實施形態中,於上述加熱處理步驟中,係於非活性氣體環境下進行加熱處理。 In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, heat treatment is performed in an inert gas atmosphere.

本發明之附載體銅箔之製造方法於再另一實施形態中,於上述加熱處理步驟中,於將附載體銅箔捲入至金屬製的中空管中的狀態下進行加熱處理。 In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, heat treatment is performed in a state in which the copper foil with a carrier is wound into a hollow tube made of metal.

本發明之附載體銅箔之製造方法於再另一實施形態中,於上述加熱處理步驟中,將把附載體銅箔捲入至金屬製的中空管中時的張力設 為5~100kgf/m或20~100kgf/m從而進行加熱處理。 In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, the tension of the copper foil with a carrier is rolled into a hollow tube made of metal. It is heat-treated at 5 to 100 kgf/m or 20 to 100 kgf/m.

本發明之附載體銅箔之製造方法於再另一實施形態中,於上述加熱處理步驟中,在將附載體銅箔捲入至金屬製的中空管中的狀態下,一邊以0.01~600旋轉/小時的速度旋轉上述中空管一邊進行加熱處理。 In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, the copper foil with a carrier is wound into a hollow tube made of metal, and 0.01 to 600 is used. The hollow tube was rotated at a rotation/hour speed while being subjected to heat treatment.

本發明之附載體銅箔之製造方法於再另一實施形態中,上述加熱處理前之附載體銅箔進一步於上述載體側之表面依序具備中間層、極薄銅層。 In still another embodiment of the present invention, the copper foil with a carrier before the heat treatment further includes an intermediate layer and an ultra-thin copper layer on the surface of the carrier side.

本發明之附載體銅箔之製造方法於再另一實施形態中,上述加熱處理前之附載體銅箔進一步於上述載體側之表面具有表面處理層。 In still another embodiment of the present invention, the copper foil with a carrier before the heat treatment further has a surface treatment layer on the surface of the carrier side.

本發明之附載體銅箔之製造方法於再另一實施形態中,上述表面處理層包含粗化處理層。 In still another embodiment of the present invention, the surface treated layer comprises a roughened layer.

本發明之附載體銅箔之製造方法於再另一實施形態中,於上述表面處理層為粗化處理層之表面進一步具有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所構成之群中之一種以上的層。 In still another embodiment of the present invention, the surface of the surface treated layer is a roughened layer further comprising a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a decane coupling treatment. One or more layers of the group formed by the layers.

本發明之附載體銅箔之製造方法於再另一實施形態中,上述加熱處理前之附載體銅箔於上述極薄銅層之表面具有選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一層以上的層來作為表面處理層。 In still another embodiment of the present invention, the copper foil with a carrier before the heat treatment has a surface selected from the roughened layer, the heat-resistant layer, the rust-proof layer, and the surface of the ultra-thin copper layer. A layer of one or more layers of the group consisting of the chromate treatment layer and the decane coupling treatment layer is used as the surface treatment layer.

本發明之附載體銅箔之製造方法於再另一實施形態中,上述加熱處理前之附載體銅箔於上述表面處理層上具備樹脂層。 In still another embodiment of the present invention, the copper foil with a carrier before the heat treatment is provided with a resin layer on the surface treatment layer.

本發明於再另一態樣中,係一種覆銅積層板之製造方法,其使用有藉由本發明之方法所製得之附載體銅箔。 In still another aspect of the invention, there is provided a method for producing a copper-clad laminate comprising the copper foil with a carrier obtained by the method of the invention.

本發明於再另一態樣中,係一種印刷配線板之製造方法,其使用有藉由本發明之方法所製得之附載體銅箔。 In still another aspect of the invention, there is provided a method of producing a printed wiring board using the copper foil with a carrier obtained by the method of the invention.

本發明於再另一態樣中,係一種印刷配線板之製造方法,其包含以下步驟:準備藉由本發明之方法而製得之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;及於將上述附載體銅箔與絕緣基板積層後,經將上述附載體銅箔之載體剝離之步驟而形成覆銅積層板,其後,藉由半加成法、減成法、部分加成法或改良半加成法(Modified Semi Additive)中之任一方法形成電路。 In still another aspect, the invention provides a method for manufacturing a printed wiring board, comprising the steps of: preparing a carrier copper foil and an insulating substrate prepared by the method of the invention; and insulating the above-mentioned carrier copper foil After laminating the carrier-attached copper foil and the insulating substrate, the copper-clad laminate is formed by peeling off the carrier of the carrier-attached copper foil, and then, by a semi-additive method, a subtractive method, A method of forming a circuit by either a partial addition method or a modified semi-additive method (Modified Semi Additive).

本發明於再另一態樣中,係一種印刷配線板之製造方法,其包含以下步驟:於藉由本發明之方法而製得之附載體銅箔的上述極薄銅層側表面或上述載體側表面形成電路;以埋沒上述電路之方式於上述附載體銅箔之上述極薄銅層側表面或上述載體側表面形成樹脂層;於上述樹脂層上形成電路;於上述樹脂層上形成電路後,剝離上述載體或上述極薄銅層;及於剝離上述載體後,去除上述極薄銅層或上述載體,藉此使形成於上述極薄銅層側表面或上述載體側表面之埋沒於上述樹脂層的電路露出。 In still another aspect, the present invention provides a method of manufacturing a printed wiring board comprising the steps of: said ultra-thin copper layer side surface of said carrier copper foil obtained by the method of the present invention or said carrier side Forming a circuit; forming a resin layer on the surface of the ultra-thin copper layer side or the side of the carrier side of the copper foil with a carrier; and forming a circuit on the resin layer; after forming a circuit on the resin layer, Stripping the carrier or the ultra-thin copper layer; and after removing the carrier, removing the ultra-thin copper layer or the carrier, thereby embedding the surface of the ultra-thin copper layer or the side surface of the carrier on the resin layer The circuit is exposed.

本發明於再另一態樣中,係一種電子機器之製造方法,其使用有藉由本發明之方法所製得之印刷配線板。 In still another aspect of the invention, there is provided a method of manufacturing an electronic machine using the printed wiring board produced by the method of the invention.

本發明於再另一態樣中,係一種附載體銅箔,其係藉由本發明之方法而製得。 In still another aspect of the invention, there is provided a carrier copper foil which is produced by the method of the invention.

本發明於再另一態樣中,係一種附載體銅箔,其依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑與最小直徑之差為10mm以下。 In still another aspect, the invention is a copper foil with a carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer, a surface treatment layer containing a decane coupling treatment layer, and a very thin copper foil side on a horizontal surface. The surface treatment layer was placed on the above method to place the carrier copper foil (except for those having a resin layer), and 30 μL of sulfuric acid was added to a portion by using a pipette to have 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the remaining portion was water). After the etching liquid was left to stand for 30 seconds, the difference between the maximum diameter and the minimum diameter of the trace of the etching liquid was 10 mm or less.

本發明於再另一態樣中,係一種附載體銅箔,其依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑為25mm以上。 In still another aspect, the invention is a copper foil with a carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer, a surface treatment layer containing a decane coupling treatment layer, and a very thin copper foil side on a horizontal surface. The surface treatment layer was placed on the above method to place the carrier copper foil (except for those having a resin layer), and 30 μL of sulfuric acid was added to a portion by using a pipette to have 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the remaining portion was water). The etching liquid of the composition is placed for 30 seconds, and after the etching liquid is wiped off, the maximum diameter of the trace of the etching liquid is 25 mm or more.

本發明於再另一態樣中,係一種附載體銅箔,其依序具備載體、中間層、極薄銅層、表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑與最小直徑之差為10mm以下。 In still another aspect, the invention is a copper foil with a carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer and a surface treatment layer in sequence, and a surface treatment layer on the surface of the ultra-thin copper foil on the horizontal surface is on the surface. To place the carrier-attached copper foil (except for the resin layer), and use a pipette to add 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid to 15% by weight of hydrogen peroxide (the remainder being water). After the etching liquid was wiped off after being left for 30 seconds, the difference between the maximum diameter and the minimum diameter of the trace of the etching liquid was 10 mm or less.

本發明於再另一態樣中,係一種附載體銅箔,其依序具備載體、中間層、極薄銅層、表面處理層,於水平面上以極薄銅箔側之表面處 理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑為25mm以上。 In still another aspect, the invention is a copper foil with a carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer and a surface treatment layer in sequence, and is on the surface of the extremely thin copper foil on the horizontal surface. In the above manner, the carrier-attached copper foil (except for the resin layer) is placed, and 30 μL of sulfuric acid having 24% by weight of hydrogen peroxide (15% by weight of hydrogen peroxide) is added to one portion using a pipette. After the etching liquid was left to stand for 30 seconds, the etching liquid was wiped off, and the maximum diameter of the trace of the etching liquid was 25 mm or more.

本發明之附載體銅箔於再另一態樣中,上述蝕刻液之痕跡的最大直徑與最小直徑之差為5mm以下。 In still another aspect of the copper foil with a carrier of the present invention, the difference between the maximum diameter and the minimum diameter of the trace of the etching liquid is 5 mm or less.

本發明之附載體銅箔於再另一態樣中,上述蝕刻液之痕跡的最大直徑為35mm以上。 In still another aspect of the copper foil with a carrier of the present invention, the trace of the etching liquid has a maximum diameter of 35 mm or more.

本發明於再另一態樣中,係一種積層體,其係使用本發明之附載體銅箔而製得。 In still another aspect, the present invention is a laminate which is produced by using the copper foil with a carrier of the present invention.

本發明於再另一態樣中,係一種積層體,其含有本發明之附載體銅箔與樹脂,上述附載體銅箔之端面之一部分或全部被上述樹脂所覆蓋。 In still another aspect, the present invention provides a laminate comprising the copper foil with a carrier of the present invention and a resin, and one or both of the end faces of the copper foil with the carrier are covered with the resin.

本發明於再另一態樣中,係一種積層體,其係將一個本發明之附載體銅箔自上述載體側或上述表面處理層側積層於另一個本發明之附載體銅箔的上述載體側或上述表面處理層側而成。 In still another aspect, the present invention provides a laminate in which a copper foil with a carrier of the present invention is laminated from the carrier side or the surface treatment layer to another carrier of the copper foil with carrier of the present invention. The side or the surface treatment layer side is formed.

本發明之積層體於一實施形態中,上述一個附載體銅箔之上述載體側表面或上述表面處理層側表面與上述另一個附載體銅箔之上述載體側表面或上述表面處理層側表面視需要經由接著劑直接積層而被構成。 In one embodiment of the present invention, the carrier side surface or the surface treatment layer side surface of the one of the carrier-attached copper foils and the carrier side surface of the other carrier copper foil or the surface of the surface treatment layer are It is necessary to be directly laminated by an adhesive.

本發明之積層體於另一實施形態中,上述一個附載體銅箔之上述載體或上述表面處理層與上述另一個附載體銅箔之上述載體或上述表面處理層接合。 In another embodiment of the present invention, the carrier or the surface treatment layer of the one of the copper foils with a carrier is bonded to the carrier or the surface treatment layer of the other copper foil with a carrier.

本發明之積層體於再另一實施形態中,上述積層體之端面之一部分或全部被樹脂覆蓋。 In still another embodiment of the laminated body of the present invention, part or all of the end faces of the laminated body are covered with a resin.

本發明於再另一態樣中,係一種印刷配線板,其係使用本發明之附載體銅箔製造而成者。 In still another aspect of the invention, there is provided a printed wiring board produced by using the copper foil with a carrier of the invention.

本發明於再另一態樣中,係一種電子機器,其係使用本發明之印刷配線板製造而成者。 In still another aspect, the present invention is an electronic device manufactured using the printed wiring board of the present invention.

本發明於再另一態樣中,係一種印刷配線板之製造方法,其包含以下步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;及於將上述附載體銅箔與絕緣基板積層後,經將上述附載體銅箔之載體剝離之步驟而形成覆銅積層板,其後,藉由半加成法、減成法、部分加成法或改良半加成法中之任一方法形成電路。 According to still another aspect of the present invention, a method of manufacturing a printed wiring board includes the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; laminating the copper foil with the carrier and the insulating substrate; After the carrier-attached copper foil is laminated with the insulating substrate, the copper-clad laminate is formed by the step of peeling off the carrier with the carrier copper foil, and then, by semi-additive method, subtractive method, partial addition method or modification Any of the methods of the semi-additive method forms a circuit.

本發明於再另一態樣中,係一種印刷配線板之製造方法,其包含以下步驟:於本發明之附載體銅箔的上述極薄銅層側表面或上述載體側表面形成電路;以埋沒上述電路之方式於上述附載體銅箔之上述極薄銅層側表面或上述載體側表面形成樹脂層;於形成上述樹脂層後,剝離上述載體或上述極薄銅層;及於剝離上述載體或上述極薄銅層後,去除上述極薄銅層或上述載體, 藉此使形成於上述極薄銅層側表面或上述載體側表面之埋沒於上述樹脂層的電路露出。 In still another aspect, the present invention provides a method of manufacturing a printed wiring board comprising the steps of: forming a circuit on the side surface of the ultra-thin copper layer of the copper foil with carrier of the present invention or the side surface of the carrier; In the above circuit, a resin layer is formed on the surface of the ultra-thin copper layer side of the copper foil with a carrier or the surface of the carrier; after the resin layer is formed, the carrier or the ultra-thin copper layer is peeled off; and the carrier is peeled off or After the ultra-thin copper layer is removed, the ultra-thin copper layer or the carrier is removed. Thereby, the circuit buried in the resin layer formed on the side surface of the ultra-thin copper layer or the side surface of the carrier is exposed.

本發明於再另一態樣中,係一種印刷配線板之製造方法,其包含以下步驟:於本發明之附載體銅箔的上述極薄銅層側表面或上述載體側表面形成電路;以埋沒上述電路之方式於上述附載體銅箔之上述極薄銅層側表面或上述載體側表面形成樹脂層;於上述樹脂層上形成電路;於上述樹脂層上形成電路後,剝離上述載體或上述極薄銅層;及於剝離上述載體或上述極薄銅層後,去除上述極薄銅層或上述載體,藉此使形成於上述極薄銅層側表面或上述載體側表面之埋沒於上述樹脂層的電路露出。 In still another aspect, the present invention provides a method of manufacturing a printed wiring board comprising the steps of: forming a circuit on the side surface of the ultra-thin copper layer of the copper foil with carrier of the present invention or the side surface of the carrier; In the above circuit, a resin layer is formed on the surface of the ultra-thin copper layer side surface or the carrier side surface of the copper foil with a carrier; a circuit is formed on the resin layer; after the circuit is formed on the resin layer, the carrier or the pole is peeled off a thin copper layer; and after the carrier or the ultra-thin copper layer is peeled off, the ultra-thin copper layer or the carrier is removed, whereby the surface of the ultra-thin copper layer or the side surface of the carrier is buried in the resin layer The circuit is exposed.

本發明於再另一態樣中,係一種印刷配線板之製造方法,其包含以下步驟:將本發明之附載體銅箔的上述極薄銅層側表面或上述載體側表面與樹脂基板進行積層;在與上述附載體銅箔之積層有樹脂基板之側為相反側的上述極薄銅層側表面或上述載體側表面至少設置1次樹脂層和電路此兩層;及在形成上述樹脂層及電路此兩層後,從上述附載體銅箔剝離上述載體或上述極薄銅層。 According to still another aspect of the invention, there is provided a method of producing a printed wiring board comprising the steps of: laminating the surface of the ultra-thin copper layer or the surface of the carrier side of the copper foil with a carrier of the present invention and a resin substrate a resin layer and a circuit layer are provided at least once on the surface of the ultra-thin copper layer side opposite to the side on which the resin substrate is laminated with the copper foil on the carrier or the carrier side surface; and the resin layer is formed and After the two layers of the circuit, the carrier or the ultra-thin copper layer is peeled off from the copper foil with a carrier.

本發明於再另一態樣中,係一種印刷配線板之製造方法,其 包含以下步驟:將本發明之附載體銅箔的上述載體側表面與樹脂基板進行積層;在與上述附載體銅箔之積層有樹脂基板之側為相反側的極薄銅層側表面至少設置1次樹脂層和電路此兩層;及在形成上述樹脂層及電路此兩層後,從上述附載體銅箔剝離上述極薄銅層。 In still another aspect, the present invention is a method of manufacturing a printed wiring board, The method includes the steps of: laminating the carrier side surface of the copper foil with a carrier of the present invention and a resin substrate; and providing at least 1 on the side surface of the ultra-thin copper layer on the side opposite to the side of the copper foil with the carrier copper foil laminated on the resin substrate. The two layers of the sub-resin layer and the circuit; and after forming the two layers of the resin layer and the circuit, the ultra-thin copper layer is peeled off from the copper foil with a carrier.

藉由本發明,可提供一種對極薄銅層之電路形成性良好的附載體銅箔之製造方法。又,提供蝕刻液之潤濕性良好的附載體銅箔。 According to the present invention, it is possible to provide a method for producing a copper foil with a carrier which is excellent in circuit formation property to an extremely thin copper layer. Further, a copper foil with a carrier having good wettability of the etching liquid is provided.

圖1:A~C係使用了本發明之附載體銅箔的印刷配線板之製造方法之具體例的自曝光-顯影至電路鍍敷-去除光阻劑為止之步驟中之配線板剖面的示意圖。 Fig. 1 is a schematic view showing a cross section of a wiring board in a step from the exposure-development to the circuit plating-removal of the photoresist in the specific example of the method for producing a printed wiring board with a copper foil with a carrier of the present invention; .

圖2:D~F係使用了本發明之附載體銅箔的印刷配線板之製造方法之具體例的自積層樹脂及第2層附載體銅箔至雷射開孔為止之步驟中之配線板剖面的示意圖。 Fig. 2 is a wiring board in the step of the self-laminated resin and the second layer-attached carrier copper foil to the laser opening of the specific example of the method for producing a printed wiring board with a carrier copper foil according to the present invention; Schematic diagram of the section.

圖3:G~I係使用了本發明之附載體銅箔的印刷配線板之製造方法之具體例的自形成通孔填充物至剝離第1層載體為止之步驟中之配線板剖面的示意圖。 Fig. 3 is a schematic view showing a cross section of the wiring board in the step from the formation of the via filler to the peeling of the first carrier, in a specific example of the method for producing a printed wiring board with a copper foil with a carrier of the present invention.

圖4:J~K係使用了本發明之附載體銅箔的印刷配線板之製造方法之具體例的自快速蝕刻至形成凸塊-銅柱為止之步驟中之配線板剖面的示意 圖。 Fig. 4 is a schematic view showing a cross section of a wiring board in a step from rapid etching to formation of a bump-copper column in a specific example of a method of manufacturing a printed wiring board with a copper foil with a carrier of the present invention; Figure.

圖5:係電路之俯視觀察照片,其表示實驗例中之自電路上面進行觀察而得到之電路下端寬度之最大值與最小值的差(μm)之測定方法。 Fig. 5 is a plan view of a system circuit showing a method of measuring a difference (μm) between the maximum value and the minimum value of the width of the lower end of the circuit obtained from the observation of the circuit in the experimental example.

<附載體銅箔之製造方法> <Method for Producing Carrier Copper Foil>

作為依序具備有載體、中間層、極薄銅層之附載體銅箔的使用形態,首先,將極薄銅層之表面貼合於絕緣基板並進行熱壓接後,剝離載體。接著,於已和絕緣基板接著的極薄銅層設置特定圖案之光阻。接著,利用特定的蝕刻液進行蝕刻處理,藉由去除未被光阻所覆蓋的部分之極薄銅層,而形成作為目的之導體圖案,例如,製作具有特定電路之印刷配線板等。此處,藉由特定之蝕刻液來進行蝕刻處理時,若極薄銅層之與樹脂基材的界面附近部分對於蝕刻液之潤濕性差,則蝕刻液之潤濕範圍變得不足。於此情形時,於與樹脂基材之界面附近部分會產生蝕刻不均勻的部分,而使電路直線性變得不良。 As a form of use of a carrier-attached copper foil having a carrier, an intermediate layer, and an ultra-thin copper layer, first, the surface of the ultra-thin copper layer is bonded to an insulating substrate, and after thermocompression bonding, the carrier is peeled off. Next, a photoresist of a specific pattern is placed on the extremely thin copper layer that has been bonded to the insulating substrate. Next, an etching process is performed using a specific etching liquid, and an extremely thin copper layer which is not covered by the photoresist is removed to form a target conductor pattern. For example, a printed wiring board having a specific circuit or the like is formed. Here, when the etching treatment is performed by a specific etching liquid, if the wettability of the portion near the interface between the ultra-thin copper layer and the resin substrate is poor, the wettability range of the etching liquid becomes insufficient. In this case, a portion where etching is uneven in the vicinity of the interface with the resin substrate causes a circuit linearity to be deteriorated.

對此,本發明之附載體銅箔之製造方法於一態樣中,係於準備依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層的附載體銅箔後,對該附載體銅箔進行1小時~8小時之加熱溫度為100℃~220℃的加熱處理。再者,上述100℃~220℃係表示加熱裝置內的環境溫度。如此,藉由進行1小時~8小時之加熱溫度為100℃~220℃的加熱處理,由於矽烷偶合處理層中之未反應的氫基會進行脫水縮合反應,因此該處理層除了會變得更牢固而提高與樹脂基材之密合性之外,還會使極薄銅層與 表面處理層之間的界面附近,及於具有多層表面處理層之情形時該多層之間的界面附近之原子組成不連續部分藉由相互擴散而形成為連續的原子組成分布,因此極薄銅層之與樹脂基材的界面附近部分對於蝕刻液之潤濕性變得良好,於與樹脂基材之界面附近部分蝕刻均勻,而使極薄銅層之電路直線性變得良好。再者,典型而言,極薄銅層主要由銅構成。又,表面處理層亦可依序具有粗化處理層及/或耐熱層及/或防銹層及/或鉻酸鹽處理層及矽烷偶合處理層,亦可以任意的順序來具有其等。粗化處理層較佳為主要由合金,例如銅合金或鎳合金或鈷合金等構成。粗化處理層主要亦可由銅構成。鉻酸鹽處理層較佳為主要由金屬氧化物構成。矽烷偶合處理層較佳為由有機矽化合物構成。 In this regard, the method for producing a copper foil with a carrier of the present invention is in the form of a carrier-attached copper foil which is provided with a carrier, an intermediate layer, an extremely thin copper layer, and a surface treatment layer containing a decane coupling treatment layer. The carrier copper foil is subjected to heat treatment at a heating temperature of 100 ° C to 220 ° C for 1 hour to 8 hours. Further, the above 100 ° C to 220 ° C indicates the ambient temperature in the heating device. Thus, by performing a heat treatment at a heating temperature of 100 ° C to 220 ° C for 1 hour to 8 hours, the unreacted hydrogen group in the decane coupling treatment layer undergoes a dehydration condensation reaction, so that the treatment layer becomes more Strong and improved adhesion to the resin substrate, it also makes the ultra-thin copper layer In the vicinity of the interface between the surface treatment layers, and in the case of having a plurality of surface treatment layers, the discontinuous portions of the atomic composition in the vicinity of the interface between the plurality of layers are formed into a continuous atomic composition distribution by mutual diffusion, and thus an extremely thin copper layer The wettability with respect to the etching liquid in the vicinity of the interface with the resin substrate is good, and the etching is uniform in the vicinity of the interface with the resin substrate, and the circuit linearity of the extremely thin copper layer is improved. Furthermore, typically, an extremely thin copper layer consists essentially of copper. Further, the surface treatment layer may have a roughening treatment layer and/or a heat-resistant layer and/or a rust-preventive layer and/or a chromate treatment layer and a decane coupling treatment layer in this order, or may be provided in any order. The roughened layer is preferably mainly composed of an alloy such as a copper alloy or a nickel alloy or a cobalt alloy. The roughening layer can also be mainly composed of copper. The chromate treatment layer is preferably composed mainly of a metal oxide. The decane coupling treatment layer is preferably composed of an organic ruthenium compound.

通常,由於將附載體銅箔與樹脂基材貼合時進行50~120分鐘左右的溫度為160~220℃之加熱壓接,因此雖然於此時上述的相互擴散亦會於某種程度上進行,但是視條件亦會有相互擴散不足的情形。因此,藉由將上述加熱處理在與樹脂基材接著前進行,可使蝕刻性及其均勻性之提高效果更為確實。 Usually, when the copper foil with a carrier is bonded to a resin substrate, the temperature is about 160 to 120 minutes, and the temperature is 160 to 220 ° C. Therefore, the above-mentioned mutual diffusion is performed to some extent. However, depending on the conditions, there will be situations where there is insufficient mutual diffusion. Therefore, the effect of improving the etching property and the uniformity can be further improved by performing the above heat treatment before the resin substrate.

再者,於附載體銅箔之極薄銅層側表面檢測到Si之情形時,可藉由XPS等表面分析來判斷存在矽烷偶合處理層。 Further, in the case where Si is detected on the surface of the ultra-thin copper layer of the carrier copper foil, the presence of the decane coupling treatment layer can be judged by surface analysis such as XPS.

於該加熱處理中,在溫度未達100℃,或加熱時間未達1小時之情形時,各處理層間之界面附近的相互擴散變得不足。又,於該加熱處理中,在溫度超過220℃,或加熱時間超過8小時之情形時,會有可能生成載體與極薄銅箔之剝離強度產生變化,或發生極薄銅層之晶粒成長從而使機械強度下降等其他的問題。於該加熱處理步驟中,較佳為進行1小時 ~6小時之加熱溫度為100℃~220℃的加熱處理,較佳為進行1小時~6小時之加熱溫度為120℃~220℃的加熱處理,更佳為進行2小時~4小時之加熱溫度為160℃~220℃的加熱處理。 In the heat treatment, when the temperature is less than 100 ° C or the heating time is less than 1 hour, the interdiffusion in the vicinity of the interface between the respective treatment layers becomes insufficient. Further, in the heat treatment, when the temperature exceeds 220 ° C or the heating time exceeds 8 hours, there is a possibility that the peel strength of the carrier and the ultra-thin copper foil is changed, or the grain growth of the extremely thin copper layer occurs. This causes other problems such as a decrease in mechanical strength. In the heat treatment step, it is preferably carried out for 1 hour. ~6 hours heating temperature is 100 ° C ~ 220 ° C heat treatment, preferably for 1 hour ~ 6 hours heating temperature is 120 ° C ~ 220 ° C heating treatment, more preferably for 2 hours ~ 4 hours heating temperature It is heat treated at 160 ° C ~ 220 ° C.

本發明之附載體銅箔之製造方法於另一態樣中,包含下述加熱處理步驟:對依序具備載體、中間層、極薄銅層、表面處理層的附載體銅箔,將到達加熱溫度為止的升溫速度設為超過50℃/小時,進行1小時~8小時之加熱溫度為100℃~220℃的加熱處理。此處,該升溫速度係從加熱開始至第一次到達加熱溫度為止之升溫速度。於升溫速度為50℃/小時以下之情形,有加熱處理之生產性下降的情況,又,由於加熱處理之時間長,因此有附載體銅箔表面被氧化的情況。又,升溫速度較佳為200℃/小時以下。於升溫速度超過200℃/小時之情形,會有因卷芯與附載體銅箔之間的熱膨脹率之差異而造成伸長程度不同,從而產生皺摺之情形。又,於超過200℃/小時的情形,有附載體銅箔對於蝕刻液之潤濕性惡化之情形。其原因並不清楚,但有可能是因為由於附載體銅箔劇烈地膨脹,導致捲成線圈狀時接觸之表面處理層與載體之間發生摩擦或偏移,或是產生對表面處理層之應力集中,該摩擦/偏移/應力集中等和表面處理層中之部分的移位之產生有所關聯,該移位會對表面處理層之元素的擴散狀態造成影響。 In another aspect of the method for producing a copper foil with a carrier of the present invention, the following heat treatment step is included: a copper foil with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer, which are sequentially provided, will reach the heating The temperature increase rate until the temperature is more than 50 ° C / hour, and the heating temperature of 1 hour to 8 hours is 100 ° C to 220 ° C. Here, the temperature increase rate is a temperature increase rate from the start of heating to the first time the heating temperature is reached. When the temperature increase rate is 50 ° C /hr or less, the productivity of the heat treatment is lowered, and since the heat treatment time is long, the surface of the copper foil with the carrier may be oxidized. Further, the temperature increase rate is preferably 200 ° C / hour or less. In the case where the temperature increase rate exceeds 200 ° C / hour, there is a case where the degree of elongation differs due to the difference in the coefficient of thermal expansion between the core and the copper foil with the carrier, and wrinkles are generated. Moreover, in the case of exceeding 200 ° C / hour, the wettability of the copper foil with a carrier to the etching liquid deteriorates. The reason for this is not clear, but it may be because the copper foil with the carrier is violently expanded, causing friction or offset between the surface treatment layer and the carrier which are wound when wound into a coil shape, or stress on the surface treatment layer. Concentration, the friction/offset/stress concentration and the like are related to the displacement of a portion of the surface treatment layer which affects the diffusion state of the elements of the surface treatment layer.

上述到達加熱溫度為止的升溫速度更佳為70℃/小時~200℃/小時,再更佳為100℃/小時~200℃/小時,再更佳為150℃/小時~200℃/小時。 The temperature increase rate up to the above heating temperature is more preferably from 70 ° C / hr to 200 ° C / hr, still more preferably from 100 ° C / hr to 200 ° C / hr, still more preferably from 150 ° C / hr to 200 ° C / hr.

於本發明之附載體銅箔之製造方法中,在該加熱處理步驟中,較佳為在不含有會造成載體表面及極薄銅層表面氧化或惡化之氧、水 蒸氣等氣體的環境下進行加熱處理,例如較佳為在氦、氖、氬、氮等及該等之混合氣體的非活性氣體環境下進行加熱處理。 In the method for producing a copper foil with a carrier of the present invention, in the heat treatment step, it is preferred to contain oxygen and water which may cause oxidation or deterioration of the surface of the carrier and the surface of the ultra-thin copper layer. The heat treatment is carried out in the atmosphere of a gas such as steam. For example, it is preferably subjected to heat treatment in an inert gas atmosphere of cerium, neon, argon, nitrogen or the like and a mixed gas thereof.

於本發明之附載體銅箔之製造方法中,在上述加熱處理步驟,較佳為在將附載體銅箔捲入至金屬製之中空管中的狀態下進行加熱處理。藉由在將附載體銅箔捲入至金屬製之中空管中的狀態下進行加熱處理,可利用在導熱良好之金屬管中通氣而亦可自內側來對附載體銅箔進行加熱,從而可進行有效地熱處理。金屬製之中空管並無特別限定,例如較佳為碳鋼、不銹鋼製,作為其大小,可設為外徑為7cm~20cm且厚度為0.5cm~3.0cm。 In the method for producing a copper foil with a carrier of the present invention, in the heat treatment step, it is preferred to carry out heat treatment in a state in which the copper foil with a carrier is wound into a hollow tube made of metal. By heat-treating the copper foil with a carrier in a state in which it is wound in a metal hollow tube, it is possible to ventilate the metal tube which is excellent in heat conduction, or to heat the copper foil with a carrier from the inside. Effective heat treatment is possible. The hollow tube made of metal is not particularly limited. For example, it is preferably made of carbon steel or stainless steel. The outer diameter is 7 cm to 20 cm and the thickness is 0.5 cm to 3.0 cm.

於本發明之附載體銅箔之製造方法中,在上述加熱處理步驟中,較佳為進行下述加熱處理:將把附載體銅箔捲入金屬製之中空管中時的張力設為5~100kgf/m。該張力係附載體銅箔之每單位寬度(寬度1m)之張力。藉由將該張力設為5kgf/m以上,可抑制氧之捲入從而防止附載體銅箔之氧化。又,藉由將該張力設為100kgf/m以下,可防止捲取時所產生的皺摺。 In the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, it is preferred to carry out a heat treatment in which the tension when the copper foil with a carrier is wound into a hollow metal tube is set to 5 ~100kgf/m. This tension is the tension per unit width (width 1 m) of the carrier copper foil. By setting the tension to 5 kgf/m or more, it is possible to suppress the entrapment of oxygen and thereby prevent oxidation of the copper foil with a carrier. Moreover, by setting the tension to 100 kgf/m or less, it is possible to prevent wrinkles which are generated during winding.

該張力更佳為10kgf/m以上,更佳為20kgf/m以上,更佳為20~100kgf/m,再更佳為20~50kgf/m,再更佳為20~30kgf/m。 The tension is more preferably 10 kgf/m or more, more preferably 20 kgf/m or more, still more preferably 20 to 100 kgf/m, still more preferably 20 to 50 kgf/m, still more preferably 20 to 30 kgf/m.

於本發明之附載體銅箔之製造方法中,在上述加熱處理步驟中,較佳為在將附載體銅箔捲入至金屬製的中空管中的狀態下,一邊以0.01~600旋轉/小時的速度旋轉上述中空管一邊進行加熱處理。藉由一邊以0.01旋轉/小時以上且600旋轉/小時以下之相對較低的速度來旋轉中空管,一邊進行加熱處理,可去除被捲入於經捲取之銅箔與銅箔之間的氧, 從而防止加熱處理中之附載體銅箔的氧化。該中空管之旋轉速度更佳為0.01~180旋轉/小時,更佳為0.01~120旋轉/小時,更佳為0.01~70旋轉/小時,更佳為1~70旋轉/小時。 In the method for producing a copper foil with a carrier of the present invention, in the heat treatment step, it is preferable to rotate the carrier copper foil in a state of 0.01 to 600 while being wound into a hollow tube made of metal. Heat treatment was performed while rotating the hollow tube at an hourly speed. By rotating the hollow tube at a relatively low speed of 0.01 rotation/hour or more and 600 rotation/hour or less, heat treatment is performed to remove the wound between the wound copper foil and the copper foil. oxygen, Thereby, oxidation of the copper foil with a carrier in the heat treatment is prevented. The rotation speed of the hollow tube is preferably 0.01 to 180 rotations/hour, more preferably 0.01 to 120 rotations/hour, more preferably 0.01 to 70 rotations/hour, and even more preferably 1 to 70 rotations/hour.

於本發明之附載體銅箔之製造方法中,較佳為上述加熱處理步驟後於常溫下所測得之載體的拉伸強度為300MPa以上。藉由如上所述般加熱處理步驟後於常溫下所測得之載體的拉伸強度為300MPa以上,可充分保持極薄銅層發揮作為載體之功能時的剛性。 In the method for producing a copper foil with a carrier according to the present invention, it is preferred that the tensile strength of the carrier measured at room temperature after the heat treatment step is 300 MPa or more. When the tensile strength of the carrier measured at room temperature after the heat treatment step as described above is 300 MPa or more, the rigidity of the ultra-thin copper layer to function as a carrier can be sufficiently maintained.

該載體之拉伸強度更佳為350MPa以上,再更佳為380MPa以上,更典型為350~500MPa,再更典型為380~450MPa。 The tensile strength of the carrier is more preferably 350 MPa or more, still more preferably 380 MPa or more, still more typically 350 to 500 MPa, and still more typically 380 to 450 MPa.

<附載體銅箔> <With carrier copper foil>

以下,若未特別明記,則附載體銅箔之實施形態係對本發明之加熱處理前者進行說明,但是該實施形態對於加熱處理後者(藉由本發明之附載體銅箔之製造方法而製得之附載體銅箔)亦同樣適用。 Hereinafter, unless otherwise stated, the embodiment of the copper foil with a carrier is described above for the heat treatment of the present invention, but the embodiment is the same as the heat treatment (the method of manufacturing the copper foil with a carrier of the present invention) The same applies to the carrier copper foil).

本發明之附載體銅箔依序具有載體、中間層、極薄銅層、表面處理層。附載體銅箔本身之使用方法為業者所周知,例如可將極薄銅層之表面貼合於紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂、聚酯膜、聚醯亞胺膜、液晶聚合物膜、氟樹脂膜等絕緣基板並進行熱壓接後剝離載體,將黏合在絕緣基板的極薄銅層蝕刻成目標的導體圖案,最終製造印刷配線板。 The copper foil with carrier of the present invention has a carrier, an intermediate layer, an extremely thin copper layer, and a surface treatment layer in this order. The method of using the carrier copper foil itself is well known. For example, the surface of the ultra-thin copper layer can be bonded to the paper substrate phenol resin, paper substrate epoxy resin, synthetic fiber cloth substrate epoxy resin, glass cloth - Paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, polyester film, polyimide film, liquid crystal polymer film, fluororesin film and other insulating substrates After the thermocompression bonding, the carrier is peeled off, and the ultra-thin copper layer adhered to the insulating substrate is etched into a target conductor pattern to finally produce a printed wiring board.

<載體> <carrier>

可以用於本發明的載體典型而言為金屬箔或樹脂膜,例如以銅箔、銅 合金箔、鎳箔、鎳合金箔、鐵箔、鐵合金箔、不銹鋼箔、鋁箔、鋁合金箔、絕緣樹脂膜、聚醯亞胺膜、LCP膜的形態提供。 The carrier which can be used in the present invention is typically a metal foil or a resin film such as copper foil or copper. The alloy foil, nickel foil, nickel alloy foil, iron foil, iron alloy foil, stainless steel foil, aluminum foil, aluminum alloy foil, insulating resin film, polyimide film, and LCP film are provided.

可以用於本發明的載體典型而言以壓延銅箔或電解銅箔的形態提供。通常,電解銅箔是使銅從硫酸銅鍍浴電解析出到鈦或不銹鋼的轉筒上而製造,壓延銅箔是反覆進行利用壓延輥的塑性加工和熱處理而製造。作為銅箔的材料,除了精銅(JIS H3100合金編號C1100)或無氧銅(JIS H3100合金編號C1020或JIS H3510合金編號C1011)等高純度銅以外,例如亦可以使用摻Sn銅、摻Ag銅、添加了Cr、Zr或Mg等的銅合金、添加了Ni及Si等的卡遜系銅合金之類的銅合金。 The carrier which can be used in the present invention is typically provided in the form of a rolled copper foil or an electrolytic copper foil. Usually, the electrolytic copper foil is produced by electrically analyzing copper from a copper sulfate plating bath onto a drum of titanium or stainless steel, and the rolled copper foil is produced by repeatedly performing plastic working and heat treatment by a calender roll. As the material of the copper foil, in addition to high-purity copper such as refined copper (JIS H3100 alloy No. C1100) or oxygen-free copper (JIS H3100 alloy number C1020 or JIS H3510 alloy number C1011), for example, Sn-doped copper or Ag-doped copper may be used. A copper alloy such as Cr, Zr or Mg or a copper alloy such as a Cason copper alloy such as Ni or Si is added.

另外,作為電解銅箔,可以利用以下電解液組成及製造條件製作。 Further, the electrolytic copper foil can be produced by the following electrolyte composition and production conditions.

再者,本說明書中所記載之銅箔的製造、銅箔的表面處理或銅箔的鍍敷等中所使用的處理液的剩餘部分只要沒有特別明示,則為水。 In addition, the remainder of the treatment liquid used for the production of the copper foil, the surface treatment of the copper foil, the plating of the copper foil, and the like described in the present specification is water unless otherwise specified.

<電解液組成> <electrolyte composition>

銅:90~110g/L Copper: 90~110g/L

硫酸:90~110g/L Sulfuric acid: 90~110g/L

氯:50~100ppm Chlorine: 50~100ppm

調平劑1(雙(3-磺丙基)二硫化物):10~30ppm Leveling agent 1 (bis(3-sulfopropyl) disulfide): 10~30ppm

調平劑2(胺化合物):10~30ppm Leveling agent 2 (amine compound): 10~30ppm

上述胺化合物可以使用以下化學式的胺化合物。 As the above amine compound, an amine compound of the following chemical formula can be used.

(該化學式中,R1及R2選自由羥基烷基、醚基、芳基、芳香族取代烷基、不飽和烴基、烷基組成之群) (In the formula, R 1 and R 2 are selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group)

<製造條件> <Manufacturing conditions>

電流密度:70~100A/dm2 Current density: 70~100A/dm 2

電解液溫度:50~60℃ Electrolyte temperature: 50~60°C

電解液線速度:3~5m/sec Electrolyte line speed: 3~5m/sec

電解時間:0.5~10分鐘 Electrolysis time: 0.5~10 minutes

另外,本說明書中將用語「銅箔」單獨使用時,亦包括銅合金箔在內。 In addition, when the term "copper foil" is used alone in this specification, it also includes a copper alloy foil.

關於可以用於本發明的載體的厚度亦沒有特別限制,只要適當調整成在發揮作為載體的作用的方面所合適的厚度便可,例如可以設為5μm以上。但若過厚,則生產成本提高,所以通常較佳設為35μm以下。因此,載體的厚度典型而言為8~70μm,更典型而言為12~70μm,更典型而言為18~35μm。另外,從降低原料成本的觀點來說,載體的厚度小為較佳。因此,載體的厚度典型而言為5μm以上且35μm以下,較佳為5μm以上且18μm以下,較佳為5μm以上且12μm以下,較佳為5μm以上且11μm以下,較佳為5μm以上且10μm以下。另外,在載體厚度 小的情況下,在載體通箔時容易產生皺褶。為了防止產生皺褶,有效的是例如使附載體銅箔製造裝置的運送輥平滑,或縮短運送輥和下一個運送輥的距離。另外,在作為印刷配線板的製造方法的一的埋入法(Enbedded Process)使用附載體銅箔的情況下,載體的剛性必須為高。因此,在用於埋入法的情況下,載體的厚度較佳為18μm以上且300μm以下,較佳為25μm以上且150μm以下,較佳為35μm以上且100μm以下,進一步更較佳為35μm以上且70μm以下。 The thickness of the carrier which can be used in the present invention is not particularly limited, and may be appropriately adjusted to a thickness suitable for the function as a carrier, and may be, for example, 5 μm or more. However, if it is too thick, the production cost is increased, so it is usually preferably 35 μm or less. Therefore, the thickness of the carrier is typically from 8 to 70 μm, more typically from 12 to 70 μm, and more typically from 18 to 35 μm. Further, from the viewpoint of reducing the cost of the raw material, the thickness of the carrier is preferably small. Therefore, the thickness of the carrier is typically 5 μm or more and 35 μm or less, preferably 5 μm or more and 18 μm or less, preferably 5 μm or more and 12 μm or less, preferably 5 μm or more and 11 μm or less, preferably 5 μm or more and 10 μm or less. . In addition, in the thickness of the carrier In the small case, wrinkles are likely to occur when the carrier is passed through the foil. In order to prevent wrinkles from occurring, it is effective to smooth the conveyance roller of the carrier-attached copper foil manufacturing apparatus, for example, or to shorten the distance between the conveyance roller and the next conveyance roller. Further, in the case of using a copper foil with a carrier as an encapsuladed process for manufacturing a printed wiring board, the rigidity of the carrier must be high. Therefore, in the case of the embedding method, the thickness of the carrier is preferably 18 μm or more and 300 μm or less, preferably 25 μm or more and 150 μm or less, preferably 35 μm or more and 100 μm or less, and more preferably 35 μm or more. 70 μm or less.

<中間層> <intermediate layer>

於載體上設置中間層。亦可於載體與中間層之間設置其他層。本發明中使用之中間層只要為如下構成則並無特別限定:於附載體銅箔向絕緣基板積層之步驟前極薄銅層不易自載體剝離,另一方面,於向絕緣基板積層之步驟後極薄銅層可自載體剝離。例如,本發明之附載體銅箔之中間層亦可含有選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn、該等之合金、該等之水合物、該等之氧化物、有機物所組成之群中之一種或兩種以上。又,中間層亦可為複數層。又,中間層亦可設置於載體之兩面。 An intermediate layer is provided on the carrier. Other layers may also be provided between the carrier and the intermediate layer. The intermediate layer used in the present invention is not particularly limited as long as it is a structure in which the ultra-thin copper layer is not easily peeled off from the carrier before the step of laminating the carrier copper foil to the insulating substrate, and on the other hand, after the step of laminating the insulating substrate The very thin copper layer can be peeled off from the carrier. For example, the intermediate layer of the copper foil with a carrier of the present invention may further contain a compound selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, such alloys, and the like, One or more of the group consisting of such oxides and organic substances. Also, the intermediate layer may be a plurality of layers. Further, the intermediate layer may be disposed on both sides of the carrier.

又,例如,中間層可藉由如下方式構成:自載體側形成由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所組成之元素群中之一種元素構成的單一金屬層,或者由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所組成之元素群中之一種或兩種以上之元素構成的合金層,於其上形成由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所組成之元素群中之一種元素構成的單一金屬層,或者由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所組成之元素群中之一種或兩種以上之元 素構成的合金層,或者由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所組成之元素群中之一種或兩種以上之元素的水合物或氧化物或有機物所構成的層。 Further, for example, the intermediate layer may be formed by forming an element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn from the carrier side. a single metal layer constituting or an alloy layer composed of one or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn, Forming thereon a single metal layer composed of one element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, or selected from Cr, Ni One or more elements of a group consisting of Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn An alloy layer composed of a hydrate, or a hydrate or oxidation of one or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn. a layer of matter or organic matter.

又,可於載體之單面或雙面上設置含Ni之中間層。中間層較佳為於載體上依序積層鎳或含鎳之合金之任1種之層、及含有鉻、鉻合金、鉻之氧化物中之任1種以上之層而構成。並且,較佳為於鎳或含鎳之合金之任1種之層及/或含有鉻、鉻合金、鉻之氧化物中之任1種以上之層中含有鋅。此處,所謂含鎳之合金,係指由鎳與選自由鈷、鐵、鉻、鉬、鋅、鉭、銅、鋁、磷、鎢、錫、砷及鈦所組成之群中之一種以上元素構成的合金。含鎳之合金亦可為由3種以上之元素構成之合金。又,所謂鉻合金,係指由鉻與選自由鈷、鐵、鎳、鉬、鋅、鉭、銅、鋁、磷、鎢、錫、砷及鈦所組成之群中之一種以上元素構成的合金。鉻合金亦可為由3種以上之元素構成之合金。又,含有鉻、鉻合金、鉻之氧化物中之任1種以上之層亦可為鉻酸鹽處理層。此處,所謂鉻酸鹽處理層,係指經含有鉻酸酐、鉻酸、二鉻酸、鉻酸鹽或二鉻酸鹽之液處理之層。鉻酸鹽處理層亦可含有鈷、鐵、鎳、鉬、鋅、鉭、銅、鋁、磷、鎢、錫、砷及鈦等元素(亦可為金屬、合金、氧化物、氮化物、硫化物等任一種形態)。作為鉻酸鹽處理層之具體例,可列舉:純鉻酸鹽處理層或鉻酸鋅處理層等。於本發明中,將經鉻酸酐或二鉻酸鉀水溶液處理之鉻酸鹽處理層稱為純鉻酸鹽處理層。又,於本發明中,將經含有鉻酸酐或二鉻酸鉀及鋅之處理液處理之鉻酸鹽處理層稱為鉻酸鋅處理層。 Further, an intermediate layer containing Ni may be provided on one side or both sides of the carrier. The intermediate layer is preferably formed by sequentially laminating a layer of nickel or a nickel-containing alloy on the carrier, and a layer containing at least one of chromium, a chromium alloy, and an oxide of chromium. Further, it is preferable that zinc is contained in any one of layers of nickel or a nickel-containing alloy and/or one or more layers containing chromium, a chromium alloy, and an oxide of chromium. Here, the alloy containing nickel means one or more elements selected from the group consisting of nickel and cobalt, iron, chromium, molybdenum, zinc, bismuth, copper, aluminum, phosphorus, tungsten, tin, arsenic, and titanium. The alloy that is formed. The nickel-containing alloy may be an alloy composed of three or more elements. Further, the term "chromium alloy" means an alloy composed of chromium and one or more elements selected from the group consisting of cobalt, iron, nickel, molybdenum, zinc, bismuth, copper, aluminum, phosphorus, tungsten, tin, arsenic, and titanium. . The chromium alloy may also be an alloy composed of three or more elements. Further, the layer containing at least one of chromium, a chromium alloy, and an oxide of chromium may be a chromate-treated layer. Here, the chromate treatment layer means a layer treated with a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate or dichromate. The chromate treatment layer may also contain elements such as cobalt, iron, nickel, molybdenum, zinc, bismuth, copper, aluminum, phosphorus, tungsten, tin, arsenic and titanium (may also be metals, alloys, oxides, nitrides, sulfides). Any form of matter). Specific examples of the chromate treatment layer include a pure chromate treatment layer or a zinc chromate treatment layer. In the present invention, the chromate treatment layer treated with an aqueous solution of chromic anhydride or potassium dichromate is referred to as a pure chromate treatment layer. Further, in the present invention, the chromate treatment layer treated with the treatment liquid containing chromic acid anhydride or potassium dichromate and zinc is referred to as a zinc chromate treatment layer.

又,中間層較佳為於載體上依序積層鎳、鎳-鋅合金、鎳- 磷合金、鎳-鈷合金中之任1種之層,及鉻酸鋅處理層、純鉻酸鹽處理層、鍍鉻層中之任1種之層而構成,中間層進而較佳為於載體上依序積層鎳層或鎳-鋅合金層、及鉻酸鋅處理層而構成,或者依序積層鎳-鋅合金層、及純鉻酸鹽處理層或鉻酸鋅處理層而構成。鎳與銅之接著力高於鉻與銅之接著力,因此於剝離極薄銅層時,變成於極薄銅層與鉻酸鹽處理層之界面剝離。又,對於中間層之鎳,期待防止銅成分自載體擴散至極薄銅層之障壁效果。又,較佳為不對中間層進行鍍鉻而形成鉻酸鹽處理層。鍍鉻係於表面形成緻密之鉻氧化物層,因此於利用電鍍形成極薄銅箔時,電阻上升,容易產生針孔。形成有鉻酸鹽處理層之表面係形成有與鍍鉻相比並不緻密之鉻氧化物層,因此不易成為利用電鍍形成極薄銅箔時之電阻,而可減少針孔。此處,藉由形成鉻酸鋅處理層作為鉻酸鹽處理層,而使利用電鍍形成極薄銅箔時之電阻低於通常之鉻酸鹽處理層,可進一步抑制針孔之產生。 Moreover, the intermediate layer is preferably laminated on the carrier in sequence with nickel, nickel-zinc alloy, nickel- a layer of any one of a phosphorus alloy and a nickel-cobalt alloy, and a layer of any one of a zinc chromate treatment layer, a pure chromate treatment layer, and a chrome plating layer, and the intermediate layer is further preferably a carrier. The nickel layer or the nickel-zinc alloy layer and the zinc chromate treatment layer are sequentially laminated, or a nickel-zinc alloy layer, a pure chromate treatment layer or a zinc chromate treatment layer are sequentially laminated. The adhesion between nickel and copper is higher than the adhesion between chromium and copper. Therefore, when the ultra-thin copper layer is peeled off, the interface between the ultra-thin copper layer and the chromate-treated layer is peeled off. Further, for the nickel of the intermediate layer, it is expected to prevent the barrier effect of the copper component from diffusing from the carrier to the extremely thin copper layer. Further, it is preferred that the intermediate layer is not chrome-plated to form a chromate treatment layer. Since chrome plating forms a dense chromium oxide layer on the surface, when an extremely thin copper foil is formed by plating, the electric resistance rises and pinholes are likely to occur. The surface on which the chromate-treated layer is formed is formed with a chromium oxide layer which is not denser than chromium plating. Therefore, it is difficult to form an electric resistance when forming an extremely thin copper foil by electroplating, and pinholes can be reduced. Here, by forming the zinc chromate treatment layer as the chromate treatment layer, the electric resistance when forming an extremely thin copper foil by electroplating is lower than that of the usual chromate treatment layer, and the occurrence of pinholes can be further suppressed.

於使用電解銅箔作為載體之情形時,就減少針孔之觀點而言,較佳為於光澤面設置中間層。 In the case of using an electrolytic copper foil as a carrier, it is preferable to provide an intermediate layer on the shiny side from the viewpoint of reducing pinholes.

中間層中之鉻酸鹽處理層較薄地存在於極薄銅層之界面時,於對絕緣基板進行積層之步驟前極薄銅層不會自載體剝離,另一方面,可獲得於對絕緣基板進行積層之步驟後可將極薄銅層自載體剝離的特性,故而較佳。於未設置鎳層或含鎳之合金層(例如鎳-鋅合金層)而使鉻酸鹽處理層存在於載體與極薄銅層之交界之情形時,剝離性幾乎未提高,於無鉻酸鹽處理層而直接將鎳層或含鎳之合金層(例如鎳-鋅合金層)與極薄銅層積層之情形時,隨著鎳層或含鎳之合金層(例如鎳-鋅合金層)中之鎳量剝離強度過強或過弱,而無法獲得適當之剝離強度。 When the chromate treatment layer in the intermediate layer is thinly present at the interface of the ultra-thin copper layer, the ultra-thin copper layer is not peeled off from the carrier before the step of laminating the insulating substrate, and on the other hand, the insulating substrate can be obtained. It is preferred to carry out the step of laminating to remove the ultra-thin copper layer from the carrier. When the nickel layer or the nickel-containing alloy layer (for example, a nickel-zinc alloy layer) is not provided and the chromate-treated layer is present at the boundary between the carrier and the ultra-thin copper layer, the peeling property is hardly improved, and the chromic acid is not removed. When the salt layer is directly treated with a nickel layer or a nickel-containing alloy layer (for example, a nickel-zinc alloy layer) and an extremely thin copper layer, a nickel layer or a nickel-containing alloy layer (for example, a nickel-zinc alloy layer) is used. The amount of nickel in the peeling strength is too strong or too weak to obtain a suitable peel strength.

又,若鉻酸鹽處理層存在於載體與鎳層或含鎳之合金層(例如鎳-鋅合金層)之交界,則於剝離極薄銅層時中間層亦隨之剝離,即於載體與中間層之間發生剝離,故而欠佳。此種狀況不僅於與載體之界面設置鉻酸鹽處理層之情況下會發生,若於與極薄銅層之界面設置鉻酸鹽處理層時鉻量過多,則亦會發生。認為其原因在於,由於銅與鎳容易固溶,故而若使該等接觸,則會因相互擴散而提高接著力,變得不易剝離,另一方面,由於鉻與銅不易固溶,不易發生相互擴散,故而於鉻與銅之界面接著力較弱,容易剝離。又,於中間層之鎳量不足之情形時,於載體與極薄銅層之間僅存微量之鉻,故而兩者進行密合而變得難以剝離。 Moreover, if the chromate treatment layer is present at the boundary between the support and the nickel layer or the nickel-containing alloy layer (for example, a nickel-zinc alloy layer), the intermediate layer is also peeled off when the ultra-thin copper layer is peeled off, that is, on the carrier and Peeling occurs between the intermediate layers, which is not preferable. Such a situation occurs not only when a chromate treatment layer is provided at the interface with the carrier, but also when the chromate treatment layer is provided at the interface with the ultra-thin copper layer. The reason for this is that copper and nickel are easily dissolved in a solid state. Therefore, if these contacts are made, the adhesion force is increased by mutual diffusion, and the adhesion is less likely to occur. On the other hand, since chromium and copper are not easily dissolved, it is less likely to occur. Diffusion, so the interface between chromium and copper is weaker and easy to peel off. Further, when the amount of nickel in the intermediate layer is insufficient, only a trace amount of chromium is present between the carrier and the ultra-thin copper layer, so that the two are in close contact with each other and become difficult to peel off.

中間層之鎳層或含鎳之合金層(例如鎳-鋅合金層)例如可藉由如電鍍、無電解鍍敷及浸漬鍍敷之濕式鍍敷,或如濺鍍、CVD及PDV之乾式鍍敷而形成。就成本之觀點而言,較佳為電鍍。再者,於載體為樹脂膜之情形時,可藉由如CVD及PDV之乾式鍍敷或如無電解鍍敷及浸漬鍍敷之濕式鍍敷而形成中間層。 The nickel layer of the intermediate layer or the alloy layer containing nickel (for example, a nickel-zinc alloy layer) may be, for example, wet plating such as electroplating, electroless plating, and immersion plating, or dry plating such as sputtering, CVD, and PDV. Formed by plating. From the viewpoint of cost, electroplating is preferred. Further, in the case where the carrier is a resin film, the intermediate layer can be formed by dry plating such as CVD and PDV or wet plating such as electroless plating and immersion plating.

又,鉻酸鹽處理層例如可由電解鉻酸鹽或浸漬鉻酸鹽等形成,但由於可提高鉻濃度,使極薄銅層自載體之剝離強度變得良好,故而較佳為由電解鉻酸鹽形成。 Further, the chromate treatment layer may be formed, for example, by electrolytic chromate or impregnated chromate. However, since the chromium concentration is increased and the peel strength of the ultra-thin copper layer from the carrier is improved, it is preferably electrolytic chromic acid. Salt formation.

本發明之附載體銅箔之中間層亦可於載體上依序積層鎳層,及含有含氮之有機化合物、含硫之有機化合物及羧酸中之任一者之有機物層而構成。又,本發明之附載體銅箔之中間層亦可於載體上依序積層含有含氮之有機化合物、含硫之有機化合物及羧酸中之任一者之有機物層,及鎳層而構成。又,作為該含有含氮之有機化合物、含硫之有機化合 物及羧酸中之任一者之有機物,可列舉BTA(苯并三唑)、MBT(巰基苯并噻唑)等。 The intermediate layer of the copper foil with a carrier of the present invention may be formed by sequentially laminating a nickel layer on the carrier, and an organic layer containing any one of a nitrogen-containing organic compound, a sulfur-containing organic compound, and a carboxylic acid. Further, the intermediate layer of the copper foil with a carrier of the present invention may be formed by sequentially laminating an organic layer containing any of a nitrogen-containing organic compound, a sulfur-containing organic compound, and a carboxylic acid, and a nickel layer on the carrier. Further, as the organic compound containing a nitrogen-containing organic compound and containing sulfur Examples of the organic substance of any one of the substance and the carboxylic acid include BTA (benzotriazole), MBT (mercaptobenzothiazole), and the like.

又,作為中間層所含之有機物,較佳為使用由選自含氮之有機化合物、含硫之有機化合物及羧酸中之1種或2種以上構成者。於含氮之有機化合物、含硫之有機化合物及羧酸之中,含氮之有機化合物包括具有取代基之含氮之有機化合物。作為具體之含氮之有機化合物,較佳為使用具有取代基之三唑化合物即1,2,3-苯并三唑、羧基苯并三唑、N',N'-雙(苯并三唑基甲基)脲、1H-1,2,4-三唑及3-胺基-1H-1,2,4-三唑等。 In addition, as the organic substance contained in the intermediate layer, one or two or more kinds selected from the group consisting of organic compounds containing nitrogen, organic compounds containing sulfur, and carboxylic acids are preferably used. Among the nitrogen-containing organic compounds, sulfur-containing organic compounds, and carboxylic acids, the nitrogen-containing organic compound includes a nitrogen-containing organic compound having a substituent. As the specific nitrogen-containing organic compound, it is preferred to use a triazole compound having a substituent, that is, 1,2,3-benzotriazole, carboxybenzotriazole, N', N'-bis(benzotriazole). Methyl)urea, 1H-1,2,4-triazole and 3-amino-1H-1,2,4-triazole and the like.

含硫之有機化合物較佳為使用巰基苯并噻唑、2-巰基苯并噻唑鈉、三聚硫氰酸及2-苯并咪唑硫醇等。 As the sulfur-containing organic compound, mercaptobenzothiazole, sodium 2-mercaptobenzothiazole, trimeric thiocyanate, 2-benzimidazolethiol or the like is preferably used.

作為羧酸,尤其較佳為使用單羧酸,其中較佳為使用油酸、亞麻油酸及次亞麻油酸等。 As the carboxylic acid, a monocarboxylic acid is particularly preferably used, and among them, oleic acid, linoleic acid, linoleic acid, and the like are preferably used.

上述有機物較佳為含有厚度為25nm以上且80nm以下者,更佳為含有30nm以上且70nm以下者。中間層亦可含有複數種(一種以上)上述有機物。 The organic substance preferably contains a thickness of 25 nm or more and 80 nm or less, and more preferably 30 nm or more and 70 nm or less. The intermediate layer may also contain a plurality of (one or more) of the above organic substances.

再者,有機物之厚度可以如下方式進行測定。 Further, the thickness of the organic substance can be measured as follows.

<中間層之有機物厚度> <intermediate layer organic matter thickness>

於將附載體銅箔之極薄銅層自載體剝離後,對露出之極薄銅層之中間層側表面、與露出之載體之中間層側表面進行XPS測定,而製成深度分佈圖。然後,可將自極薄銅層之中間層側表面至碳濃度最初成為3at%以下之深度設為A(nm),將自載體之中間層側表面至碳濃度最初成為3at%以下之深度設為B(nm),將A與B之合計設為中間層之有機物之厚度(nm)。 After the ultra-thin copper layer with the carrier copper foil was peeled off from the carrier, the intermediate layer side surface of the exposed ultra-thin copper layer and the intermediate layer side surface of the exposed carrier were subjected to XPS measurement to prepare a depth profile. Then, the depth from the intermediate layer side surface of the ultra-thin copper layer to the carbon concentration of 3 at% or less is set to A (nm), and the depth from the intermediate layer side surface of the carrier to the carbon concentration is initially set to 3 at% or less. In the case of B (nm), the total of A and B is set as the thickness (nm) of the organic substance in the intermediate layer.

將XPS之運轉條件示於以下。 The operating conditions of XPS are shown below.

‧裝置:XPS測定裝置(ULVAC-PHI公司,型號5600MC) ‧Device: XPS measuring device (ULVAC-PHI, model 5600MC)

‧極限真空:3.8×10-7Pa ‧ ultimate vacuum: 3.8 × 10 -7 Pa

‧X射線:單色AlK α或非單色MgK α、X射線輸出300W、檢測面積800μm、試樣與檢測器所成之角度45° ‧X-ray: Monochromatic AlK α or non-monochromatic MgK α, X-ray output 300W, detection area 800μm , the angle between the sample and the detector is 45°

‧離子束:離子種類Ar+、加速電壓3kV、掃描面積3mm×3mm、濺鍍速率2.8nm/min(SiO2換算) ‧Ion beam: ion type Ar + , accelerating voltage 3kV, scanning area 3mm × 3mm, sputtering rate 2.8nm / min (SiO 2 conversion)

關於中間層所含之有機物之使用方法,以下對於載體箔上形成中間層之方法進行敍述並說明。於載體上形成中間層係將上述有機物溶解於溶劑中並使載體浸漬於該溶劑中,或者可對於欲形成中間層之面利用淋浴法、噴霧法、滴下法及電沉積法等而進行,無需採用特別限定之方法。此時,溶劑中之有機系溶劑之濃度於上述全部有機物中,較佳為濃度0.01g/L~30g/L、液溫20~60℃之範圍。有機物之濃度並無特別限定,原本濃度較高或較低均無問題。再者,存在如下傾向:有機物之濃度越高,又,載體對溶解上述有機物之溶劑之接觸時間越長,中間層之有機物厚度越大。並且,於中間層之有機物厚度較厚之情形時,有抑制Ni向極薄銅層側擴散的有機物之效果變大之傾向。 Regarding the method of using the organic substance contained in the intermediate layer, the method of forming the intermediate layer on the carrier foil will be described below. The intermediate layer is formed on the carrier, and the organic substance is dissolved in a solvent, and the carrier is immersed in the solvent, or the surface to be formed with the intermediate layer may be subjected to a shower method, a spray method, a dropping method, an electrodeposition method, or the like, without A specially defined method is employed. In this case, the concentration of the organic solvent in the solvent is preferably in the range of 0.01 g/L to 30 g/L and the liquid temperature of 20 to 60 ° C in all of the above organic matters. The concentration of the organic substance is not particularly limited, and the original concentration is higher or lower without any problem. Further, there is a tendency that the higher the concentration of the organic substance, the longer the contact time of the carrier with the solvent for dissolving the organic substance, and the greater the thickness of the organic substance of the intermediate layer. Further, when the thickness of the organic material in the intermediate layer is thick, the effect of suppressing the diffusion of Ni to the extremely thin copper layer side tends to be large.

<極薄銅層> <very thin copper layer>

於中間層上設置極薄銅層。亦可於中間層與極薄銅層之間設置其他層。極薄銅層可藉由利用硫酸銅、焦磷酸銅、胺基磺酸銅、氰化銅等之電解浴的電鍍而形成,就可於高電流密度下形成銅層之方面而言,較佳為硫酸銅浴。極薄銅層之厚度並無特別限制,通常薄於載體,例如為12μm以 下。典型為0.5~12μm,更典型為1~5μm,進而更典型為1.5~5μm,進而更典型為2~5μm。再者,極薄銅層亦可設置於載體之兩面。 An extremely thin copper layer is provided on the intermediate layer. Other layers may be provided between the intermediate layer and the ultra-thin copper layer. The ultra-thin copper layer can be formed by electroplating using an electrolytic bath of copper sulfate, copper pyrophosphate, copper sulfonate, copper cyanide or the like, and is preferable in terms of forming a copper layer at a high current density. It is a copper sulfate bath. The thickness of the ultra-thin copper layer is not particularly limited and is usually thinner than the carrier, for example, 12 μm. under. It is typically 0.5 to 12 μm, more typically 1 to 5 μm, and more typically 1.5 to 5 μm, and more typically 2 to 5 μm. Furthermore, an extremely thin copper layer may be provided on both sides of the carrier.

<粗化處理及其它表面處理> <Coarsening and other surface treatment>

可以藉由在極薄銅層的表面例如為了使和絕緣基板的密合性良好等而實施粗化處理,從而設置粗化處理層。粗化處理例如可以藉由利用銅或銅合金形成粗化粒子而進行。粗化處理亦可以微細。粗化處理層可以是由選自由銅、鎳、鈷、磷、鎢、砷、鉬、鉻及鋅所組成之群中的任一單質或含有任一種以上的合金構成的層等。又,在利用銅或銅合金形成粗化粒子後,還可以進一步利用鎳、鈷、銅、鋅的單質或合金等進行設置二次粒子或三次粒子的粗化處理。然後,亦可以利用鎳、鈷、銅、鋅的單質或合金等形成耐熱層及/或防銹層,亦可進一步在其表面實施鉻酸鹽處理、矽烷偶合處理等處理。或者亦可以不進行粗化處理而利用鎳、鈷、銅、鋅的單質或合金等形成耐熱層或防銹層,進一步在其表面實施鉻酸鹽處理、矽烷偶合處理等處理。也就是說,可以在粗化處理層的表面形成選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的一種以上的層,亦可以在極薄銅層的表面形成選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中的一種以上的層。再者,上述耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層分別可以形成多層(例如2層以上、3層以上等)。此處所謂的鉻酸鹽處理層,可以是上述鉻酸鹽處理層,亦可為其他的鉻酸鹽處理層。 The roughening treatment can be provided by performing a roughening treatment on the surface of the ultra-thin copper layer, for example, in order to improve the adhesion to the insulating substrate. The roughening treatment can be carried out, for example, by forming roughened particles using copper or a copper alloy. The roughening process can also be fine. The roughening treatment layer may be any element selected from the group consisting of copper, nickel, cobalt, phosphorus, tungsten, arsenic, molybdenum, chromium, and zinc, or a layer containing any one or more alloys. Further, after the roughened particles are formed of copper or a copper alloy, the secondary particles or the tertiary particles may be further subjected to a roughening treatment using a simple substance such as nickel, cobalt, copper or zinc or an alloy. Further, the heat-resistant layer and/or the rust-preventing layer may be formed of a single substance or an alloy of nickel, cobalt, copper or zinc, or may be further subjected to a treatment such as chromate treatment or decane coupling treatment on the surface. Alternatively, the heat-resistant layer or the rust-preventive layer may be formed of a simple substance such as nickel, cobalt, copper or zinc or an alloy without performing the roughening treatment, and further subjected to a treatment such as chromate treatment or decane coupling treatment on the surface. That is, one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventive layer, a chromate-treated layer, and a decane coupling treatment layer may be formed on the surface of the roughened layer, or may be in a very thin copper layer. The surface is formed of one or more layers selected from the group consisting of a heat resistant layer, a rust preventive layer, a chromate treated layer, and a decane coupling treatment layer. Further, each of the heat-resistant layer, the rust-preventive layer, the chromate-treated layer, and the decane coupling treatment layer may be formed in multiple layers (for example, two or more layers, three or more layers, or the like). Here, the chromate treatment layer may be the chromate treatment layer or other chromate treatment layer.

再者,上述矽烷偶合處理層,於上述本案發明之另一態樣之附載體銅箔之製造方法中,如上所述為必要之構成要件,又,該本案發明之另一態 樣之附載體銅箔之製造方法係包含下述加熱處理步驟者:對於依序具備有載體、中間層、極薄銅層、表面處理層之附載體銅箔,將到達加熱溫度為止之升溫速度設為超過50℃/小時,然後於100℃~220℃進行1小時~8小時之加熱處理。 Furthermore, the above-described decane coupling treatment layer, in the method for producing a copper foil with a carrier according to another aspect of the invention of the present invention, is a necessary constituent element as described above, and further, another aspect of the invention of the present invention The method for producing a carrier-attached copper foil includes the following heat treatment step: a heating foil with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface-treated layer, which are sequentially provided with a carrier copper foil, which reaches a heating temperature It is set to exceed 50 ° C / hour, and then heat-treated at 100 ° C to 220 ° C for 1 hour to 8 hours.

作為耐熱層、防銹層,可使用公知之耐熱層、防銹層。例如,耐熱層及/或防銹層亦可為含有選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭之群中之一種以上之元素的層,亦可為由選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭之群中之一種以上之元素構成之金屬層或合金層。又,耐熱層及/或防銹層亦可含有包含選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭之群中之一種以上之元素的氧化物、氮化物、矽化物。又,耐熱層及/或防銹層亦可為含有鎳-鋅合金之層。又,耐熱層及/或防銹層亦可為鎳-鋅合金層。上述鎳-鋅合金層可為除不可避免之雜質以外,含有鎳50wt%~99wt%、鋅50wt%~1wt%者。上述鎳-鋅合金層之鋅及鎳之合計附著量為5~1000mg/m2,較佳為10~500mg/m2,較佳亦可為20~100mg/m2。又,上述含有鎳-鋅合金之層或上述鎳-鋅合金層之鎳附著量與鋅附著量之比(=鎳之附著量/鋅之附著量)較佳為1.5~10。又,上述含有鎳-鋅合金之層或上述鎳-鋅合金層之鎳附著量較佳為0.5mg/m2~500mg/m2,更佳為1mg/m2~50mg/m2。於耐熱層及/或防銹層為含有鎳-鋅合金之層之情形時,通孔(through hole)或通路孔(via hole)等之內壁部與除膠渣(desmear)液接觸時銅箔與樹脂基板之界面難以被除膠渣液腐蝕,銅箔與 樹脂基板之密合性會提昇。 As the heat-resistant layer and the rust-preventing layer, a known heat-resistant layer or rust-preventing layer can be used. For example, the heat-resistant layer and/or the rust-preventing layer may also contain a component selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum. The layer of one or more elements of the group of iron and antimony may also be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, A metal layer or an alloy layer composed of one or more elements of a group of platinum group elements, iron, and antimony. Moreover, the heat-resistant layer and/or the rust-preventing layer may further comprise a component selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum. Oxides, nitrides, and tellurides of one or more elements of the group of iron and antimony. Further, the heat-resistant layer and/or the rust-preventive layer may be a layer containing a nickel-zinc alloy. Further, the heat-resistant layer and/or the rust-preventive layer may be a nickel-zinc alloy layer. The nickel-zinc alloy layer may contain 50% by weight to 99% by weight of nickel and 50% by weight to 1% by weight of zinc, in addition to unavoidable impurities. The total adhesion of zinc and nickel in the nickel-zinc alloy layer is 5 to 1000 mg/m 2 , preferably 10 to 500 mg/m 2 , and more preferably 20 to 100 mg/m 2 . Further, the ratio of the nickel adhesion amount to the zinc adhesion amount of the nickel-zinc alloy-containing layer or the nickel-zinc alloy layer (=the adhesion amount of nickel/the adhesion amount of zinc) is preferably 1.5 to 10. Further, the nickel-zinc alloy-containing layer or the nickel-zinc alloy layer preferably has a nickel adhesion amount of 0.5 mg/m 2 to 500 mg/m 2 , more preferably 1 mg/m 2 to 50 mg/m 2 . When the heat-resistant layer and/or the rust-preventive layer is a layer containing a nickel-zinc alloy, the inner wall portion of a through hole or a via hole is in contact with the desmear liquid. The interface between the foil and the resin substrate is hard to be corroded by the desmear liquid, and the adhesion between the copper foil and the resin substrate is improved.

例如耐熱層及/或防銹層可為將附著量為1mg/m2~100mg/m2、較佳為5mg/m2~50mg/m2之鎳或鎳合金層,與附著量為1mg/m2~80mg/m2、較佳為5mg/m2~40mg/m2之錫層依序積層而成者,上述鎳合金層亦可由鎳-鉬、鎳-鋅、鎳-鉬-鈷中之任一種構成。又,耐熱層及/或防銹層之鎳或鎳合金與錫之合計附著量較佳為2mg/m2~150mg/m2,更佳為10mg/m2~70mg/m2。又,耐熱層及/或防銹層較佳為[鎳或鎳合金中之鎳附著量]/[錫附著量]=0.25~10,更佳為0.33~3。若使用該耐熱層及/或防銹層,則將附載體銅箔加工成印刷配線板以後的電路之剝離強度、該剝離強度之耐化學品性劣化率等會變得良好。 For example, the heat-resistant layer and/or the rust-preventive layer may be a nickel or nickel alloy layer having an adhesion amount of 1 mg/m 2 to 100 mg/m 2 , preferably 5 mg/m 2 to 50 mg/m 2 , and an adhesion amount of 1 mg/ The tin layer having m 2 to 80 mg/m 2 , preferably 5 mg/m 2 to 40 mg/m 2 is sequentially laminated, and the nickel alloy layer may also be composed of nickel-molybdenum, nickel-zinc, nickel-molybdenum-cobalt. Any of the components. Further, the total adhesion amount of the nickel or nickel alloy of the heat-resistant layer and/or the rust-preventing layer to tin is preferably 2 mg/m 2 to 150 mg/m 2 , more preferably 10 mg/m 2 to 70 mg/m 2 . Further, the heat-resistant layer and/or the rust-preventive layer are preferably [the amount of nickel deposited in the nickel or nickel alloy] / [the amount of tin adhesion] = 0.25 to 10, more preferably 0.33 to 3. When the heat-resistant layer and/or the rust-preventing layer are used, the peeling strength of the circuit after processing the copper foil with a carrier to a printed wiring board, the chemical-resistant deterioration rate of the peeling strength, and the like are improved.

再者,矽烷偶合處理所使用之矽烷偶合劑可使用公知之矽烷偶合劑,例如可使用胺系矽烷偶合劑或環氧系矽烷偶合劑、巰基系矽烷偶合劑。又,矽烷偶合劑亦可使用乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷、γ-甲基丙烯氧基丙基三甲氧基矽烷(γ-methacryloxypropyltrimethoxysilane)、γ-環氧丙氧基丙基三甲氧基矽烷(γ-glycidoxypropyltrimethoxysilane)、4-環氧丙基丁基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、咪唑矽烷、三矽烷、γ-巰基丙基三甲氧基矽烷等。 Further, a known decane coupling agent can be used as the decane coupling agent used in the decane coupling treatment, and for example, an amine decane coupling agent, an epoxy decane coupling agent, or a decyl decane coupling agent can be used. Further, as the decane coupling agent, vinyl trimethoxy decane, vinyl phenyl trimethoxy decane, γ-methacryloxypropyltrimethoxysilane, γ-glycidoxy can also be used. Γ-glycidoxypropyltrimethoxysilane, 4-epoxypropylbutyltrimethoxydecane, γ-aminopropyltriethoxydecane, N-β(aminoethyl)γ-amino Propyltrimethoxydecane, N-3-(4-(3-aminopropoxy)butoxy)propyl-3-aminopropyltrimethoxydecane, imidazolium, three Decane, γ-mercaptopropyltrimethoxydecane, and the like.

上述矽烷偶合處理層亦可使用環氧系矽烷、胺系矽烷、甲基丙烯氧基系矽烷、巰基系矽烷等矽烷偶合劑等而形成。再者,此種矽烷偶合劑亦可將兩種以上混合使用。其中,較佳為使用胺系矽烷偶合劑或環氧 系矽烷偶合劑所形成者。 The decane coupling treatment layer may be formed using a decane coupling agent such as epoxy decane, amine decane, methacryloxy decane or decyl decane. Further, such a decane coupling agent may be used in combination of two or more. Among them, it is preferred to use an amine decane coupling agent or epoxy. It is formed by a decane coupling agent.

此處所謂的胺系矽烷偶合劑亦可為選自由如下物質所組成之群者:N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、胺基丙基三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、N-(3-丙烯氧基-2-羥基丙基)-3-胺基丙基三乙氧基矽烷、4-胺基丁基三乙氧基矽烷、(胺基乙基胺基甲基)苯乙基三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三甲氧基矽烷、N-(2-胺基乙基-3-胺基丙基)三(2-乙基己氧基)矽烷、6-(胺基己基胺基丙基)三甲氧基矽烷、胺基苯基三甲氧基矽烷、3-(1-胺基丙氧基)-3,3-二甲基-1-丙烯基三甲氧基矽烷、3-胺基丙基三(甲氧基乙氧基乙氧基)矽烷、3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、ω-胺基十一烷基三甲氧基矽烷、3-(2-N-芾基胺基乙基胺基丙基)三甲氧基矽烷、雙(2-羥基乙基)-3-胺基丙基三乙氧基矽烷、(N,N-二乙基-3-胺基丙基)三甲氧基矽烷、(N,N-二甲基-3-胺基丙基)三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-苯基胺基丙基三甲氧基矽烷、3-(N-苯乙烯基甲基-2-胺基乙基胺基)丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷。 The amine decane coupling agent herein may also be selected from the group consisting of N-(2-aminoethyl)-3-aminopropyltrimethoxydecane, 3-(N-benzene). Vinylmethyl-2-aminoethylamino)propyltrimethoxydecane, 3-aminopropyltriethoxydecane, bis(2-hydroxyethyl)-3-aminopropyltriethyl Oxydecane, aminopropyltrimethoxydecane, N-methylaminopropyltrimethoxydecane, N-phenylaminopropyltrimethoxydecane, N-(3-propenyloxy-2- Hydroxypropyl)-3-aminopropyltriethoxydecane, 4-aminobutyltriethoxydecane, (aminoethylaminomethyl)phenethyltrimethoxydecane, N-( 2-Aminoethyl-3-aminopropyl)trimethoxydecane, N-(2-aminoethyl-3-aminopropyl)tris(2-ethylhexyloxy)decane, 6- (Aminohexylaminopropyl)trimethoxynonane, aminophenyltrimethoxydecane, 3-(1-aminopropoxy)-3,3-dimethyl-1-propenyltrimethoxy Decane, 3-aminopropyltris(methoxyethoxyethoxy)decane, 3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxydecane, ω-aminol Monoalkyl tri Baseline, 3-(2-N-decylaminoethylaminopropyl)trimethoxydecane, bis(2-hydroxyethyl)-3-aminopropyltriethoxydecane, (N, N-Diethyl-3-aminopropyl)trimethoxydecane, (N,N-dimethyl-3-aminopropyl)trimethoxydecane, N-methylaminopropyltrimethoxy Decane, N-phenylaminopropyltrimethoxydecane, 3-(N-styrylmethyl-2-aminoethylamino)propyltrimethoxydecane, γ-aminopropyltriethyl Oxydecane, N-β(aminoethyl)γ-aminopropyltrimethoxydecane, N-3-(4-(3-aminopropoxy)butoxy)propyl-3-amine Propyltrimethoxydecane.

矽烷偶合處理層較理想為以矽原子換算設為0.05mg/m2~200mg/m2、較佳為0.15mg/m2~20mg/m2、較佳為0.3mg/m2~2.0mg/ m2之範圍。於上述範圍之情形時,可使基材樹脂與表面處理銅箔之密合性更加提昇。 The decane coupling treatment layer is preferably 0.05 mg/m 2 to 200 mg/m 2 , preferably 0.15 mg/m 2 to 20 mg/m 2 , preferably 0.3 mg/m 2 to 2.0 mg/in terms of ruthenium atom. The range of m 2 . In the case of the above range, the adhesion between the base resin and the surface-treated copper foil can be further improved.

又,可對極薄銅層、粗化處理層、耐熱層、防銹層、矽烷偶合處理層或鉻酸鹽處理層之表面進行下述專利所記載之表面處理:國際公開編號WO2008/053878、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、國際公開編號WO2006/134868、日本專利第5046927號、國際公開編號WO2007/105635、日本專利第5180815號、日本特開2013-19056號。 Further, the surface of the ultra-thin copper layer, the roughened layer, the heat-resistant layer, the rust-proof layer, the decane coupling treatment layer or the chromate-treated layer may be subjected to surface treatment as described in the following patent: International Publication No. WO2008/053878, Japanese Patent Publication No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, International Publication No. WO2006/134868, Japanese Patent No. 5046927, International Publication No. WO2007/105635, Japanese Patent No. No. 5180815, Japan Special Open 2013-19056.

再者,亦可於極薄銅層之一表面或兩表面設置選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一種以上的層,亦可設置表面處理層。表面處理層亦可為選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一種以上的層。 Further, one or more selected from the group consisting of a roughened layer, a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a decane coupling treatment layer may be provided on one surface or both surfaces of the ultra-thin copper layer. The layer may also be provided with a surface treatment layer. The surface treatment layer may be one or more selected from the group consisting of a roughened layer, a heat-resistant layer, a rustproof layer, a chromate-treated layer, and a decane coupling treatment layer.

又,附載體銅箔亦可於上述粗化處理層上具備一層以上選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之層。 Further, the carrier-attached copper foil may have one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate-treated layer, and a decane coupling treatment layer on the roughened layer.

又,於上述粗化處理層上亦可具備耐熱層、防銹層,於上述耐熱層、防銹層上亦可具備鉻酸鹽處理層,於上述鉻酸鹽處理層上亦可具備矽烷偶合處理層。 Further, the heat-treated layer and the rust-preventing layer may be provided on the roughened layer, and a chromate-treated layer may be provided on the heat-resistant layer or the rust-preventing layer, and a decane coupling may be provided on the chromate-treated layer. Processing layer.

又,上述附載體銅箔亦可於上述極薄銅層上,或上述粗化處理層上,或上述耐熱層、防銹層或鉻酸鹽處理層或矽烷偶合處理層上具備樹脂層。上述樹脂層亦可為絕緣樹脂層。 Further, the copper foil with a carrier may be provided with a resin layer on the ultra-thin copper layer or the roughened layer or the heat-resistant layer, the rust-proof layer, the chromate-treated layer or the decane coupling treatment layer. The above resin layer may also be an insulating resin layer.

又,附載體銅箔可於載體上具備粗化處理層,亦可於載體上具備一層 以上選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之層。上述粗化處理層、耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層可利用公知之方法而設置,亦可藉由本案說明書、申請專利範圍、圖式中記載之方法而設置。於將載體自具有上述粗化處理層等之表面側積層於樹脂基板等支持體之情形時,於載體上設置一層以上選自上述粗化處理層、耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層中之層之情況具有載體與支持體不易剝離之優點。 Further, the carrier copper foil may have a roughening treatment layer on the carrier, or may have a layer on the carrier. The above is selected from the group consisting of a roughened layer, a heat-resistant layer, a rustproof layer, a chromate-treated layer, and a decane coupling treatment layer. The roughening layer, the heat-resistant layer, the rust-preventing layer, the chromate-treated layer, and the decane coupling treatment layer may be provided by a known method, or may be set by the method described in the specification, the patent application, and the drawings. . When the carrier is laminated on a surface of the resin substrate or the like from the surface side having the roughening layer or the like, one or more layers selected from the above-described roughening layer, heat-resistant layer, rust-proof layer, and chromate are disposed on the carrier. The layer or the layer in the decane coupling treatment layer has the advantage that the carrier and the support are not easily peeled off.

上述樹脂層可為接著劑,亦可為接著用半硬化狀態(B階段狀態)之絕緣樹脂層。半硬化狀態(B階段狀態)包含下述狀態:即便用手指觸摸其表面亦無黏著感,可將該絕緣樹脂層重疊而保管,若進一步進行加熱處理,則會引起硬化反應。 The resin layer may be an adhesive or an insulating resin layer which is followed by a semi-hardened state (B-stage state). The semi-hardened state (B-stage state) includes a state in which the insulating resin layer can be stacked and stored even if the surface is touched with a finger, and the heat-treated reaction is caused by further heat treatment.

又,上述樹脂層可含有熱硬化性樹脂,亦可為熱塑性樹脂。又,上述樹脂層亦可含有熱塑性樹脂。上述樹脂層亦可含有公知之樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等。又,上述樹脂層例如可使用如下文獻中所記載之物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等)及/或樹脂層之形成方法、形成裝置而形成,該文獻係國際公開編號WO2008/004399號、國際公開編號WO2008/053878、國際公開編號WO2009/084533、日本特開平11-5828號、日本特開平11-140281號、日本專利第3184485號、國際公開編號WO97/02728、日本專利第3676375號、日本特開2000-43188號、日本專利第3612594號、日本特開2002-179772號、日本特開2002-359444號、日本 特開2003-304068號、日本專利第3992225號、日本特開2003-249739號、日本專利第4136509號、日本特開2004-82687號、日本專利第4025177號、日本特開2004-349654號、日本專利第4286060號、日本特開2005-262506號、日本專利第4570070號、日本特開2005-53218號、日本專利第3949676號、日本專利第4178415號、國際公開編號WO2004/005588、日本特開2006-257153號、日本特開2007-326923號、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、日本特開2009-67029號、國際公開編號WO2006/134868、日本專利第5046927號、日本特開2009-173017號、國際公開編號WO2007/105635、日本專利第5180815號、國際公開編號WO2008/114858、國際公開編號WO2009/008471、日本特開2011-14727號、國際公開編號WO2009/001850、國際公開編號WO2009/145179、國際公開編號WO2011/068157、日本特開2013-19056號。 Further, the resin layer may contain a thermosetting resin or a thermoplastic resin. Further, the resin layer may contain a thermoplastic resin. The resin layer may contain a known resin, a resin curing agent, a compound, a curing accelerator, a dielectric, a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton material, and the like. Further, as the resin layer, for example, a resin (resin, a resin curing agent, a compound, a curing accelerator, a dielectric, a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton material, etc.) can be used. And/or a method of forming a resin layer, and forming a device, the document is International Publication No. WO2008/004399, International Publication No. WO2008/053878, International Publication No. WO2009/084533, Japanese Patent Laid-Open No. 11-5828, Japanese Special Kaiping No. 11-140281, Japanese Patent No. 3184485, International Publication No. WO97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open 2002-359444, Japan Japanese Patent No. 2003-304068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003-249739, Japanese Patent No. 4136509, Japanese Patent Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Publication No. 2004-349654, Japan Patent No. 4,286,060, Japanese Patent Laid-Open No. 2005-262506, Japanese Patent No. 4570070, Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004/005588, Japanese Patent Publication No. 2006 -257153, Japanese Laid-Open Patent Publication No. 2007-326923, Japanese Laid-Open Patent Publication No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, Japanese Patent Laid-Open No. 2009-67029, International Publication No. WO2006/134868, Japanese Patent No. 5046927, Japanese Patent Laid-Open No. 2009-173017, International Publication No. WO2007/105635, Japanese Patent No. 5180815, International Publication No. WO2008/114858, International Publication No. WO2009/008471, Japan Special Open 2011- No. 14727, International Publication No. WO2009/001850, International Publication No. WO2009/145179, International Publication No. WO2011/068157, Japanese Patent Publication No. 2013-19056.

又,上述樹脂層之種類並無特別限定,作為較佳為,例如可列舉含有選自如下成分之群中之一種以上之樹脂:環氧樹脂、聚醯亞胺樹脂、多官能性氰酸酯化合物、順丁烯二醯亞胺化合物、聚順丁烯二醯亞胺化合物、順丁烯二醯亞胺系樹脂、芳香族順丁烯二醯亞胺樹脂、聚乙烯醇縮乙醛樹脂、胺酯(urethane)樹脂、聚醚碸(亦稱為polyethersulphone、polyethersulfone)、聚醚碸(亦稱為polyethersulphone、polyethersulfone)樹脂、芳香族聚醯胺樹脂、芳香族聚醯胺樹脂聚合物、橡膠性樹脂、聚胺、芳香族聚胺、聚醯胺醯亞胺樹脂、橡膠變性環氧樹脂、苯氧基樹脂、羧基改質丙烯腈-丁二烯樹脂、聚苯醚、雙順丁烯二醯亞胺三樹脂、熱硬化性聚 苯醚樹脂、氰酸酯酯系樹脂、羧酸之酸酐、多元羧酸之酸酐、具有可交聯之官能基之線狀聚合物、聚苯醚樹脂、2,2-雙(4-氰酸酯基苯基)丙烷、含磷之酚化合物、環烷酸錳、2,2-雙(4-環氧丙基苯基)丙烷、聚苯醚-氰酸酯系樹脂、矽氧烷改質聚醯胺醯亞胺樹脂、氰酯樹脂、膦腈系樹脂、橡膠變性聚醯胺醯亞胺樹脂、異戊二烯、氫化型聚丁二烯、聚乙烯丁醛、苯氧基、高分子環氧樹脂、芳香族聚醯胺、氟樹脂、雙酚、嵌段共聚聚醯亞胺樹脂及氰酯樹脂。 In addition, the type of the resin layer is not particularly limited, and examples thereof include a resin containing at least one selected from the group consisting of epoxy resins, polyimine resins, and polyfunctional cyanates. a compound, a maleimide compound, a polys-methyleneimine compound, a maleimide resin, an aromatic maleimide resin, a polyvinyl acetal resin, Urethane resin, polyether oxime (also known as polyethersulphone, polyethersulfone), polyether oxime (also known as polyethersulphone, polyethersulfone) resin, aromatic polyamide resin, aromatic polyamide resin polymer, rubber Resin, polyamine, aromatic polyamine, polyamidoximine resin, rubber modified epoxy resin, phenoxy resin, carboxyl modified acrylonitrile-butadiene resin, polyphenylene ether, di-n-butylene Imine three Resin, thermosetting polyphenylene ether resin, cyanate ester resin, acid anhydride, acid anhydride, linear polymer having crosslinkable functional group, polyphenylene ether resin, 2,2- Bis(4-cyanate phenyl)propane, phosphorus-containing phenol compound, manganese naphthenate, 2,2-bis(4-epoxypropylphenyl)propane, polyphenylene ether-cyanate resin , oxoxane modified polyamidoximine resin, cyanoester resin, phosphazene resin, rubber modified polyamidoximine resin, isoprene, hydrogenated polybutadiene, polyvinyl butyral, Phenoxy group, polymer epoxy resin, aromatic polyamine, fluororesin, bisphenol, block copolymer polyimine resin and cyanoester resin.

又,上述環氧樹脂係分子內具有2個以上環氧基者,並且只要為可用於電性、電子材料用途者,則可尤其無問題地使用。又,上述環氧樹脂較佳為使用分子內具有2個以上環氧丙基之化合物進行環氧化而成的環氧樹脂。又,可將選自由如下成分所組成之群中之1種或2種以上混合而使用:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AD型環氧樹脂、酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、脂環式環氧樹脂、溴化(brominated)環氧樹脂、酚系酚醛清漆型環氧樹脂、萘型環氧樹脂、溴化雙酚A型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、橡膠改質雙酚A型環氧樹脂、環氧丙胺型環氧樹脂、異氰尿酸三環氧丙酯、N,N-二環氧丙基苯胺等環氧丙胺化合物、四氫鄰苯二甲酸二環氧丙酯等環氧丙酯化合物、含磷之環氧樹脂、聯苯型環氧樹脂、聯苯酚醛清漆型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四苯基乙烷型環氧樹脂,或者可使用上述環氧樹脂之氫化體或鹵化體。 Further, the epoxy resin has two or more epoxy groups in its molecule, and can be used without any problem as long as it can be used for electrical or electronic materials. Further, the epoxy resin is preferably an epoxy resin obtained by epoxidizing a compound having two or more epoxy propyl groups in the molecule. Further, one or two or more selected from the group consisting of bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, and bisphenol may be used. AD type epoxy resin, novolak type epoxy resin, cresol novolak type epoxy resin, alicyclic epoxy resin, brominated epoxy resin, phenolic novolac type epoxy resin, naphthalene ring Oxygen resin, brominated bisphenol A type epoxy resin, o-cresol novolak type epoxy resin, rubber modified bisphenol A type epoxy resin, epoxidized propylamine type epoxy resin, triglycidyl isocyanurate , a glycidyl compound such as N,N-diepoxypropylaniline, a glycidyl ester compound such as diglycidyl tetrahydrophthalate, a phosphorus-containing epoxy resin, a biphenyl type epoxy resin, or a combination A novolac type epoxy resin, a trishydroxyphenylmethane type epoxy resin, a tetraphenylethane type epoxy resin, or a hydrogenated body or a halogenated body of the above epoxy resin can be used.

可使用公知之含有磷之環氧樹脂作為上述含磷之環氧樹脂。又,上述含磷之環氧樹脂較佳為例如分子內具備2個以上環氧基之以自9,10-二氫 -9-氧雜-10-磷雜菲-10-氧化物之衍生物之形式獲得的環氧樹脂。 A well-known phosphorus-containing epoxy resin can be used as the above phosphorus-containing epoxy resin. Further, the phosphorus-containing epoxy resin preferably has, for example, two or more epoxy groups in the molecule from 9,10-dihydrogen. An epoxy resin obtained in the form of a derivative of -9-oxa-10-phosphaphenanthrene-10-oxide.

(樹脂層含有介電體(介電體填料)之情況) (When the resin layer contains a dielectric (dielectric filler))

上述樹脂層亦可含有介電體(介電體填料)。 The resin layer may also contain a dielectric (dielectric filler).

於在上述任一種樹脂層或樹脂組成物中含有介電體(介電體填料)之情形時,可用於形成電容器層之用途,而增大電容器電路之電容。該介電體(介電體填料)係使用BaTiO3、SrTiO3、Pb(Zr-Ti)O3(通稱PZT)、PbLaTiO3‧PbLaZrO(通稱PLZT)、SrBi2Ta2O9(通稱SBT)等具有鈣鈦礦(Perovskite)結構之複合氧化物之介電體粉。 When a dielectric material (dielectric filler) is contained in any of the above resin layers or resin compositions, it can be used for forming a capacitor layer to increase the capacitance of the capacitor circuit. The dielectric (dielectric filler) is BaTiO 3 , SrTiO 3 , Pb(Zr-Ti)O 3 (commonly known as PZT), PbLaTiO 3 ‧PbLaZrO (commonly known as PLZT), and SrBi 2 Ta 2 O 9 (commonly known as SBT). A dielectric powder having a composite oxide of a perovskite structure.

介電體(介電體填料)亦可為粉狀。於介電體(介電體填料)為粉狀之情形時,該介電體(介電體填料)之粉體特性較佳為粒徑為0.01μm~3.0μm、較佳為0.02μm~2.0μm之範圍。再者,利用掃描型電子顯微鏡(SEM)對介電體拍攝照片,於在該照片上之介電體之粒子上引直線之情形時,將橫切介電體之粒子之直線長度為最長的部分之介電體之粒子長度設為該介電體之粒子直徑。並且,將測定視野內之介電體之粒子直徑之平均值設為介電體之粒徑。 The dielectric (dielectric filler) may also be in powder form. When the dielectric (dielectric filler) is in the form of a powder, the powder property of the dielectric (dielectric filler) is preferably from 0.01 μm to 3.0 μm, preferably from 0.02 μm to 2.0. The range of μm. Furthermore, when a photo is taken by a scanning electron microscope (SEM) on a dielectric body, the straight line length of the particles transverse to the dielectric body is the longest when a straight line is drawn on the particles of the dielectric body on the photo. The particle length of a portion of the dielectric is set to the particle diameter of the dielectric. Further, the average value of the particle diameters of the dielectric bodies in the measurement field of view is defined as the particle diameter of the dielectric body.

使上述樹脂層中所含之樹脂及/或樹脂組成物及/或化合物溶解於例如甲基乙基酮(MEK)、環戊酮、二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、甲醇、乙醇、丙二醇單甲醚、二甲基甲醯胺、二甲基乙醯胺、環己酮、乙基溶纖素、N-甲基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺等溶劑中而製成樹脂液(樹脂清漆),藉由例如輥式塗佈法等將其塗佈於上述附載體銅箔之極薄銅層側表面,繼而視需要進行加熱乾燥,去除溶劑而成為B階段狀態。乾燥例如只要使用熱風乾 燥爐即可,乾燥溫度只要為100~250℃、較佳為130~200℃即可。可使用溶劑溶解上述樹脂層之組成物,而製成樹脂固形物成分3wt%~70wt%、較佳為3wt%~60wt%、較佳為10wt%~40wt%、更佳為25wt%~40wt%之樹脂液。再者,就氛圍之觀點而言,現階段最佳為使用甲基乙基酮與環戊酮之混合溶劑進行溶解。再者,溶劑較佳為使用沸點為50℃~200℃之範圍之溶劑。 The resin and/or resin composition and/or compound contained in the above resin layer is dissolved in, for example, methyl ethyl ketone (MEK), cyclopentanone, dimethylformamide, dimethylacetamide, N -methylpyrrolidone, toluene, methanol, ethanol, propylene glycol monomethyl ether, dimethylformamide, dimethylacetamide, cyclohexanone, ethyl cellosolve, N-methyl-2-pyrrole A resin liquid (resin varnish) is prepared in a solvent such as ketone, N,N-dimethylacetamide or N,N-dimethylformamide, and is coated by, for example, a roll coating method. On the side surface of the extremely thin copper layer of the above-mentioned carrier copper foil, it is then heated and dried as necessary to remove the solvent to be in a B-stage state. Drying, for example, by using hot air drying The drying furnace can be used, and the drying temperature is preferably 100 to 250 ° C, preferably 130 to 200 ° C. The composition of the above resin layer may be dissolved in a solvent to form a resin solid content of 3 wt% to 70 wt%, preferably 3 wt% to 60 wt%, preferably 10 wt% to 40 wt%, more preferably 25 wt% to 40 wt%. Resin solution. Further, from the viewpoint of the atmosphere, it is most preferable to use a mixed solvent of methyl ethyl ketone and cyclopentanone for dissolution at this stage. Further, the solvent is preferably a solvent having a boiling point of from 50 ° C to 200 ° C.

又,上述樹脂層較佳為依據MIL標準中之MIL-P-13949G進行測定時之樹脂流動量為5%~35%之範圍的半硬化樹脂膜。 Moreover, it is preferable that the resin layer is a semi-hardened resin film in the range of 5% to 35% of the resin flow amount measured according to MIL-P-13949G in the MIL standard.

於本案說明書中,所謂樹脂流動量,係指依據MIL標準中之MIL-P-13949G,自使樹脂厚度為55μm之附樹脂之表面處理銅箔採取4片10cm見方試樣,於使該4片試樣重疊之狀態(積層體)下,於壓製溫度171℃、壓製壓力14kgf/cm2、壓製時間10分鐘之條件下進行貼合,根據測定此時之樹脂流出重量所得之結果,基於數1而算出之值。 In the present specification, the amount of resin flow refers to four pieces of 10 cm square samples taken from a surface-treated copper foil with a resin thickness of 55 μm according to MIL-P-13949G in the MIL standard, so that the four pieces are made. In the state in which the samples were overlapped (layered body), the bonding was carried out under the conditions of a pressing temperature of 171 ° C, a pressing pressure of 14 kgf/cm 2 , and a pressing time of 10 minutes, and based on the result of measuring the resin outflow weight at this time, based on the number 1 And calculate the value.

具備上述樹脂層之表面處理銅箔(附樹脂之表面處理銅箔)係以如下態樣使用:將該樹脂層與基材重疊後將整體熱壓接而使該樹脂層熱硬化,繼而於表面處理銅箔為附載體銅箔之極薄銅層之情形時,剝離載體而露出極薄銅層(當然露出的是該極薄銅層之中間層側表面),自與表面處理銅箔之粗化處理側相反之側的表面形成特定配線圖案。 The surface-treated copper foil (resin-treated copper foil with resin) provided with the above-mentioned resin layer is used in such a manner that the resin layer is superposed on the substrate and then thermally bonded to the entire resin layer to thermally cure the resin layer, followed by surface curing. When the copper foil is treated as an extremely thin copper layer with a carrier copper foil, the carrier is peeled off to expose an extremely thin copper layer (of course, the intermediate layer side surface of the extremely thin copper layer is exposed), which is thick from the surface-treated copper foil. The surface on the opposite side of the processing side forms a specific wiring pattern.

若使用該附樹脂之表面處理銅箔,則可減少製造多層印刷配 線基板時之預浸體材料之使用片數。而且,即便將樹脂層之厚度設為可確保層間絕緣之厚度,或完全不使用預浸體材料,亦可製造覆銅積層板。又,此時,亦可將絕緣樹脂底漆塗佈於基材之表面而進一步改善表面之平滑性。 If the surface treated copper foil with the resin is used, the multilayer printing can be reduced. The number of sheets of prepreg material used for the wire substrate. Further, the copper clad laminate can be produced even if the thickness of the resin layer is such that the thickness of the interlayer insulation can be ensured or the prepreg material is not used at all. Further, at this time, the insulating resin primer may be applied to the surface of the substrate to further improve the smoothness of the surface.

再者,於不使用預浸體材料之情形時,可節約預浸體材料之材料成本,又,積層步驟亦變得簡略,因此於經濟上較為有利,而且有如下優點:僅製造預浸體材料之厚度程度的多層印刷配線基板之厚度變薄,而可製造1層之厚度為100μm以下之極薄之多層印刷配線基板。 Moreover, when the prepreg material is not used, the material cost of the prepreg material can be saved, and the lamination step is also simplified, so that it is economically advantageous, and has the following advantages: only the prepreg is manufactured. The thickness of the multilayer printed wiring board of the thickness of the material is reduced, and it is possible to manufacture a very thin multilayer printed wiring board having a thickness of 100 μm or less.

該樹脂層之厚度較佳為0.1~120μm。 The thickness of the resin layer is preferably from 0.1 to 120 μm.

若樹脂層之厚度薄於0.1μm,則有如下情況:接著力降低,於不介存預浸體材料將該附樹脂之表面處理銅箔積層於具備內層材料之基材上時,難以確保內層材料與電路之間之層間絕緣。另一方面,若樹脂層之厚度厚於120μm,則有如下情況:難以於1次塗佈步驟中形成目標厚度之樹脂層,而需要多餘之材料費及步驟數,故而於經濟上變得不利。 When the thickness of the resin layer is less than 0.1 μm, there is a case where the adhesion is lowered, and it is difficult to ensure that the surface-treated copper foil with the resin is laminated on the substrate having the inner layer material without interposing the prepreg material. Interlayer insulation between the inner layer material and the circuit. On the other hand, when the thickness of the resin layer is thicker than 120 μm, it is difficult to form a resin layer of a desired thickness in one coating step, and an unnecessary material cost and number of steps are required, so that it is economically disadvantageous. .

再者,於將具有樹脂層之表面處理銅箔用於製造極薄之多層印刷配線板之情形時,將上述樹脂層之厚度設為0.1μm~5μm、更佳為0.5μm~5μm、更佳為1μm~5μm時,可縮小多層印刷配線板之厚度,故而較佳。 In the case where a surface-treated copper foil having a resin layer is used for producing an extremely thin multilayer printed wiring board, the thickness of the resin layer is set to be 0.1 μm to 5 μm, more preferably 0.5 μm to 5 μm, and more preferably When the thickness is from 1 μm to 5 μm, the thickness of the multilayer printed wiring board can be reduced, which is preferable.

進而,藉由於印刷配線板上搭載電子零件類,而完成印刷電路板。於本發明中,「印刷配線板」亦包括如此搭載有電子零件類之印刷配線板及印刷電路板及印刷基板。 Further, the printed circuit board is completed by mounting electronic components on the printed wiring board. In the present invention, the "printed wiring board" also includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components are mounted.

又,可使用該印刷配線板而製作電子機器,可使用搭載有該電子零件類之印刷電路板而製作電子機器,亦可使用搭載有該電子零件類之印刷基板而製作電子機器。以下,表示若干使用本發明之附載體銅箔的印刷配線 板之製造步驟之例子。 In addition, an electronic device can be produced by using the printed wiring board, and an electronic device can be produced by using a printed circuit board on which the electronic component is mounted, and an electronic device can be manufactured by using the printed circuit board on which the electronic component is mounted. Hereinafter, a plurality of printed wirings using the copper foil with a carrier of the present invention are shown An example of a manufacturing step of a board.

本發明之印刷配線板之製造方法之一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;及以使極薄銅層側與絕緣基板對向之方式將上述附載體銅箔與絕緣基板積層後,經將上述附載體銅箔之載體剝離之步驟而形成覆銅積層板,其後,藉由半加成法、改良半加成法、部分加成法及減成法中之任一種方法形成電路。絕緣基板亦可設為內層電路入口。 An embodiment of the method for producing a printed wiring board according to the present invention includes the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; laminating the copper foil with the insulating substrate; and forming the ultra-thin copper layer side After the insulating substrate is laminated, the copper foil with the carrier and the insulating substrate are laminated, and then the copper-clad laminate is formed by peeling off the carrier of the copper foil with the carrier, and then the half-addition method is used to improve the half-addition. Any one of the method of forming, partial addition, and subtraction forms a circuit. The insulating substrate can also be set as an inner layer circuit inlet.

於本發明中,所謂半加成法,係指於絕緣基板或銅箔晶種層上進行較薄之無電解鍍敷,形成圖案後,利用電鍍及蝕刻形成導體圖案的方法。 In the present invention, the semi-additive method refers to a method in which a thin electroless plating is performed on an insulating substrate or a copper foil seed layer, and a pattern is formed by plating and etching.

因此,使用半加成法之本發明之印刷配線板之製造方法之一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法將剝離上述載體而露出之極薄銅層完全去除;於藉由利用蝕刻去除上述極薄銅層而露出之上述樹脂上設置通孔或/及盲孔;對含有上述通孔或/及盲孔之區域進行除膠渣處理;於含有上述樹脂及上述通孔或/及盲孔之區域設置無電解鍍敷層; 於上述無電解鍍敷層上設置光阻劑;對上述光阻劑進行曝光,其後,去除形成有電路之區域之光阻劑;於去除了上述光阻劑之上述形成有電路之區域設置電解鍍敷層;去除上述光阻劑;及藉由快速蝕刻等去除位於除了上述形成有電路之區域以外之區域的無電解鍍敷層。 Therefore, an embodiment of a method for producing a printed wiring board of the present invention using a semi-additive method includes the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; and laminating the copper foil with the insulating substrate; After laminating the copper foil with the carrier and the insulating substrate, the carrier of the copper foil with the carrier is peeled off; and the ultra-thin copper layer exposed by peeling off the carrier is completely removed by etching or plasma etching using an etching solution such as acid; Providing a through hole or/and a blind hole in the resin exposed by removing the ultra-thin copper layer by etching; removing a region containing the through hole or/and the blind hole; and containing the resin and the above An electroless plating layer is disposed in a region of the through hole or/and the blind hole; And providing a photoresist on the electroless plating layer; exposing the photoresist to the photoresist, and then removing the photoresist formed in the circuit region; and forming the circuit region in which the photoresist is removed Electrolytic plating; removing the photoresist; and removing the electroless plating layer located in a region other than the region in which the circuit is formed by rapid etching or the like.

使用半加成法之本發明之印刷配線板之製造方法之另一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;於剝離上述載體而露出之極薄銅層與上述絕緣樹脂基板上設置通孔或/及盲孔;對含有上述通孔或/及盲孔之區域進行除膠渣處理;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法將剝離上述載體而露出之極薄銅層完全去除;於含有由利用蝕刻等去除上述極薄銅層而露出之上述樹脂及上述通孔或/及盲孔之區域設置無電解鍍敷層;於上述無電解鍍敷層上設置光阻劑;對上述光阻劑進行曝光,其後,去除形成有電路之區域之光阻劑;於去除了上述光阻劑之上述形成有電路之區域設置電解鍍敷層; 去除上述光阻劑;及藉由快速蝕刻等去除位於除了上述形成有電路之區域以外之區域的無電解鍍敷層。 Another embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method comprises the steps of: preparing a copper foil with a carrier of the present invention and an insulating substrate; laminating the copper foil with the carrier and the insulating substrate; After the carrier-attached copper foil is laminated with the insulating substrate, the carrier of the carrier-attached copper foil is peeled off; the ultra-thin copper layer exposed by peeling off the carrier and the insulating resin substrate are provided with through holes or/and blind vias; The area of the through hole or/and the blind hole is subjected to desmear treatment; the extremely thin copper layer exposed by peeling off the carrier is completely removed by etching or plasma etching using an acid or the like; the inclusion is removed by etching or the like. An electroless plating layer is provided in a region of the resin and the through hole or/and the blind hole exposed by the ultra-thin copper layer; a photoresist is disposed on the electroless plating layer; and the photoresist is exposed; After removing the photoresist formed in the region of the circuit; and providing an electrolytic plating layer in the region where the photoresist is formed in the circuit; The photoresist is removed; and the electroless plating layer located in a region other than the region in which the circuit is formed is removed by rapid etching or the like.

使用半加成法之本發明之印刷配線板之製造方法之另一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;於剝離上述載體而露出之極薄銅層與上述絕緣樹脂基板上設置通孔或/及盲孔;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法將剝離上述載體而露出之極薄銅層完全去除;對含有上述通孔或/及盲孔之區域進行除膠渣處理;於含有藉由利用蝕刻等去除上述極薄銅層而露出之上述樹脂及上述通孔或/及盲孔之區域設置無電解鍍敷層;於上述無電解鍍敷層上設置光阻劑;對上述光阻劑進行曝光,其後,去除形成有電路之區域之光阻劑;於去除了上述光阻劑之上述形成有電路之區域設置電解鍍敷層;去除上述光阻劑;及藉由快速蝕刻等去除位於除了上述形成有電路之區域以外之區域的無電解鍍敷層。 Another embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method comprises the steps of: preparing a copper foil with a carrier of the present invention and an insulating substrate; laminating the copper foil with the carrier and the insulating substrate; After the carrier-attached copper foil is laminated with the insulating substrate, the carrier of the carrier-attached copper foil is peeled off; the ultra-thin copper layer exposed by peeling off the carrier and the insulating resin substrate are provided with through holes or/and blind vias; Etching or plasma etching of an etching solution such as acid to completely remove the extremely thin copper layer which is peeled off from the carrier; and performing desmear treatment on the region containing the above-mentioned through holes or/and blind vias; An electroless plating layer is disposed in the region of the resin and the through hole or/and the blind hole exposed by removing the ultra-thin copper layer; a photoresist is disposed on the electroless plating layer; and the photoresist is exposed. Thereafter, the photoresist formed in the region where the circuit is formed is removed; the electrolytic plating layer is disposed in the region where the photoresist is formed in the circuit-formed region; the photoresist is removed; and the etching is performed by rapid etching or the like Located in addition to the aforementioned electroless plating is formed in the region other than the region of the cladding layer circuit.

使用半加成法之本發明之印刷配線板之製造方法之另一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法將剝離上述載體而露出之極薄銅層完全去除;於藉由利用蝕刻去除上述極薄銅層而露出之上述樹脂之表面設置無電解鍍敷層;於上述無電解鍍敷層上設置光阻劑;對上述光阻劑進行曝光,其後,去除形成有電路之區域之光阻劑;於去除了上述光阻劑之上述形成有電路之區域設置電解鍍敷層;去除上述光阻劑;及藉由快速蝕刻等去除位於除了上述形成有電路之區域以外之區域的無電解鍍敷層及極薄銅層。 Another embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method comprises the steps of: preparing a copper foil with a carrier of the present invention and an insulating substrate; laminating the copper foil with the carrier and the insulating substrate; After laminating the copper foil with the carrier and the insulating substrate, the carrier of the copper foil with the carrier is peeled off; and the ultra-thin copper layer exposed by peeling off the carrier is completely removed by etching or plasma etching using an etching solution such as acid; An electroless plating layer is provided on the surface of the resin exposed by removing the ultra-thin copper layer by etching; a photoresist is disposed on the electroless plating layer; the photoresist is exposed, and then removed to form a photoresist having a circuit region; an electrolytic plating layer disposed in the circuit-formed region from which the photoresist is removed; removing the photoresist; and removing the region formed by the circuit by rapid etching or the like Electroless plating and ultra-thin copper layers in areas other than those.

於本發明中,所謂改良半加成法,係指於絕緣層上積層金屬箔,藉由光阻劑保護非電路形成部,藉由電解鍍敷增厚電路形成部之銅厚後,去除抗蝕劑,利用(快速)蝕刻去除上述電路形成部以外之金屬箔,藉此於絕緣層上形成電路的方法。 In the present invention, the modified semi-additive method refers to laminating a metal foil on an insulating layer, protecting a non-circuit forming portion by a photoresist, and thickening the thickness of the circuit forming portion by electrolytic plating to remove the anti-resistance. The etching agent is a method of forming a circuit on the insulating layer by (fast) etching to remove the metal foil other than the above-described circuit forming portion.

因此,使用改良半加成法之本發明之印刷配線板之製造方法之一實施形態包含下述步驟: 準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;於剝離上述載體而露出之極薄銅層與絕緣基板上設置通孔或/及盲孔;對含有上述通孔或/及盲孔之區域進行除膠渣處理;於上述含有通孔或/及盲孔之區域設置無電解鍍敷層;於剝離上述載體而露出之極薄銅層表面設置光阻劑;於設置上述光阻劑後,藉由電解鍍敷形成電路;去除上述光阻劑;及利用快速蝕刻去除藉由去除上述光阻劑而露出之極薄銅層。 Therefore, an embodiment of a method of manufacturing a printed wiring board of the present invention using a modified semi-additive method includes the following steps: Preparing the copper foil and the insulating substrate with the carrier of the present invention; laminating the copper foil with the carrier and the insulating substrate; and laminating the carrier copper foil and the insulating substrate, and then peeling off the carrier of the copper foil with the carrier; And forming a through hole or/and a blind hole on the exposed ultra-thin copper layer and the insulating substrate; performing desmear treatment on the area containing the through hole or/and the blind hole; and the above-mentioned area containing the through hole or/and the blind hole Providing an electroless plating layer; providing a photoresist on a surface of the extremely thin copper layer exposed by peeling off the carrier; forming a circuit by electrolytic plating after the photoresist is disposed; removing the photoresist; and using rapid etching The extremely thin copper layer exposed by removing the above photoresist is removed.

使用改良半加成法之本發明之印刷配線板之製造方法之另一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;於剝離上述載體而露出之極薄銅層上設置光阻劑;對上述光阻劑進行曝光,其後,去除形成有電路之區域之光阻劑;於去除了上述光阻劑之上述形成有電路之區域設置電解鍍敷層;去除上述光阻劑;及 藉由快速蝕刻等去除位於除了上述形成有電路之區域以外之區域的極薄銅層。 Another embodiment of the method for producing a printed wiring board of the present invention using the modified semi-additive method comprises the steps of: preparing a copper foil with a carrier of the present invention and an insulating substrate; and laminating the copper foil with the carrier and the insulating substrate; After laminating the carrier-attached copper foil and the insulating substrate, the carrier of the carrier-attached copper foil is peeled off; a photoresist is provided on the ultra-thin copper layer exposed by peeling off the carrier; and the photoresist is exposed; Removing the photoresist formed in the circuit-formed region; providing an electrolytic plating layer in the region where the photoresist is formed in the circuit-forming region; removing the photoresist; and An extremely thin copper layer located in a region other than the above-described region in which the circuit is formed is removed by rapid etching or the like.

於本發明中,所謂部分加成法,係指於設置導體層而成之基板、視需要穿過通孔或輔助孔用孔而成之基板上賦予觸媒核,進行蝕刻形成導體電路,視需要設置阻焊劑或光阻劑後,於上述導體電路上藉由無電解鍍敷處理(視需要進一步進行電解鍍敷處理)對通孔或輔助孔等進行增厚,藉此製造印刷配線板的方法。 In the present invention, the partial addition method refers to a substrate in which a conductor layer is provided, a catalyst core is provided on a substrate formed by passing through a via hole or an auxiliary hole, and etching is performed to form a conductor circuit. After the solder resist or the photoresist is required to be provided, the via hole or the auxiliary hole or the like is thickened on the conductor circuit by electroless plating treatment (electroplating treatment is further performed as necessary), thereby manufacturing a printed wiring board. method.

因此,使用部分加成法之本發明之印刷配線板之製造方法之一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;於剝離上述載體而露出之極薄銅層與絕緣基板上設置通孔或/及盲孔;對含有上述通孔或/及盲孔之區域進行除膠渣處理;於上述含有通孔或/及盲孔之區域賦予觸媒核;於剝離上述載體而露出之極薄銅層表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光而形成電路圖案;利用使用酸等腐蝕溶液之蝕刻或電漿等方法去除上述極薄銅層及上述觸媒核,而形成電路;去除上述蝕刻阻劑; 於利用使用酸等腐蝕溶液之蝕刻或電漿等方法去除上述極薄銅層及上述觸媒核而露出的上述絕緣基板表面,設置阻焊劑或光阻劑;及於未設置上述阻焊劑或光阻劑之區域設置無電解鍍敷層。 Therefore, an embodiment of the method for producing a printed wiring board of the present invention using a partial addition method includes the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; and laminating the copper foil with the insulating substrate; After laminating the copper foil with the carrier and the insulating substrate, the carrier of the copper foil with the carrier is peeled off; and the through hole or/and the blind hole are provided on the ultra-thin copper layer and the insulating substrate exposed by peeling off the carrier; The area of the hole or/and the blind hole is subjected to desmear treatment; the catalyst core is provided in the above-mentioned region containing the through hole or/and the blind hole; and the etching resist is provided on the surface of the extremely thin copper layer exposed by peeling off the carrier; The etching resist is exposed to form a circuit pattern; the ultra-thin copper layer and the catalyst core are removed by etching or plasma etching using an acid or the like to form a circuit; and the etching resist is removed; Providing a solder resist or a photoresist on the surface of the insulating substrate exposed by removing the ultra-thin copper layer and the catalyst core by etching or plasma etching using an etching solution such as an acid; and removing the solder resist or the light An electroless plating layer is provided in the region of the resist.

於本發明中,所謂減成法,係指藉由蝕刻等將覆銅積層板上之銅箔之不需要之部分選擇性地去除,而形成導體圖案的方法。 In the present invention, the subtractive method refers to a method of forming a conductor pattern by selectively removing unnecessary portions of the copper foil on the copper clad laminate by etching or the like.

因此,使用減成法之本發明之印刷配線板之製造方法之一實施形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;於剝離上述載體而露出之極薄銅層與絕緣基板上設置通孔或/及盲孔;對含有上述通孔或/及盲孔之區域進行除膠渣處理;於上述含有通孔或/及盲孔之區域設置無電解鍍敷層;於上述無電解鍍敷層之表面設置電解鍍敷層;於上述電解鍍敷層或/及上述極薄銅層之表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光而形成電路圖案;利用使用酸等腐蝕溶液之蝕刻或電漿等方法去除上述極薄銅層及上述無電解鍍敷層及上述電解鍍敷層,而形成電路;及去除上述蝕刻阻劑。 Therefore, one embodiment of the method for producing a printed wiring board of the present invention using the subtractive method includes the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; and laminating the copper foil with the insulating substrate; After laminating the copper foil with the carrier and the insulating substrate, the carrier of the copper foil with the carrier is peeled off; and the through hole or/and the blind hole are provided on the ultra-thin copper layer and the insulating substrate exposed by peeling off the carrier; Or / and the area of the blind hole is subjected to desmear treatment; an electroless plating layer is disposed in the region containing the through hole or/and the blind hole; an electrolytic plating layer is disposed on the surface of the electroless plating layer; An etching resistor is disposed on the surface of the plating layer or/and the ultra-thin copper layer; the etching resist is exposed to form a circuit pattern; and the ultra-thin copper layer is removed by etching or plasma using an etching solution such as acid or the like. The electroless plating layer and the electrolytic plating layer are formed to form a circuit; and the etching resist is removed.

使用減成法之本發明之印刷配線板之製造方法之另一實施 形態包含下述步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;於將上述附載體銅箔與絕緣基板積層後,將上述附載體銅箔之載體剝離;於剝離上述載體而露出之極薄銅層與絕緣基板上設置通孔或/及盲孔;對含有上述通孔或/及盲孔之區域進行除膠渣處理;於上述含有通孔或/及盲孔之區域設置無電解鍍敷層;於上述無電解鍍敷層之表面形成遮罩;於未形成遮罩之上述無電解鍍敷層之表面設置電解鍍敷層;於上述電解鍍敷層或/及上述極薄銅層之表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光而形成電路圖案;利用使用酸等腐蝕溶液之蝕刻或電漿等方法去除上述極薄銅層及上述無電解鍍敷層,而形成電路;及去除上述蝕刻阻劑。 Another implementation of a method of manufacturing a printed wiring board of the present invention using a subtractive method The form includes the steps of: preparing a copper foil and an insulating substrate with a carrier of the present invention; laminating the copper foil with the carrier and the insulating substrate; and laminating the copper foil with the insulating substrate and the carrier of the copper foil with the carrier Peeling; providing a through hole or/and a blind hole in the ultra-thin copper layer and the insulating substrate exposed by peeling off the carrier; performing desmear treatment on the region containing the through hole or/and the blind hole; And an area of the blind hole is provided with an electroless plating layer; a mask is formed on the surface of the electroless plating layer; an electrolytic plating layer is provided on the surface of the electroless plating layer where the mask is not formed; An etching resistor is disposed on the surface of the cladding layer or/and the ultra-thin copper layer; the etching resist is exposed to form a circuit pattern; and the ultra-thin copper layer is removed by etching or plasma etching using an acid or the like An electroless plating layer is formed to form a circuit; and the above etching resist is removed.

亦可不進行設置通孔或/及盲孔之步驟、及其後之除膠渣步驟。 The step of providing a through hole or/and a blind hole, and the subsequent desmear step may also be omitted.

本發明之印刷配線板之製造方法亦可包含下述步驟:於本發明之附載體銅箔的上述表面處理層側表面或上述載體側表面形成電路之步驟、以上述電路埋入之方式於上述附載體銅箔之上述表面處理層側表面或上述載體側表面形成樹脂層之步驟、於上述樹脂層上形成電路之步驟、於 上述樹脂層上形成電路之後,將上述載體或上述極薄銅層剝離之步驟、及剝離上述載體或上述極薄銅層之後,藉由去除上述極薄銅層或上述載體,而使形成於上述表面處理層側表面或上述載體側表面之埋入在上述樹脂層的電路露出之步驟。又,印刷配線板之製造方法亦可包含下述步驟:於本發明之附載體銅箔的上述表面處理層側表面或上述載體側表面形成電路之步驟、以上述電路埋入之方式於上述附載體銅箔之上述表面處理層側表面或上述載體側表面形成樹脂層之步驟、將上述載體或上述極薄銅層剝離之步驟、及剝離上述載體或上述極薄銅層之後,藉由去除上述極薄銅層或上述載體,而使形成於上述表面處理層側表面或上述載體側表面之埋入在上述樹脂層的電路露出之步驟。 The method for producing a printed wiring board of the present invention may further comprise the steps of: forming a circuit on the side surface of the surface treatment layer or the side surface of the carrier side of the copper foil with carrier of the present invention, and embedding the circuit in the manner described above a step of forming a resin layer on the side surface of the surface treatment layer or the side surface of the carrier side of the carrier copper foil, a step of forming a circuit on the resin layer, After the circuit is formed on the resin layer, the step of peeling off the carrier or the ultra-thin copper layer, and peeling off the carrier or the ultra-thin copper layer, and then removing the ultra-thin copper layer or the carrier, The step of embedding the circuit in the resin layer on the side surface of the surface treatment layer or the surface of the carrier side. Moreover, the method of manufacturing a printed wiring board may include the steps of forming a circuit on the side surface of the surface treatment layer or the side surface of the carrier side of the copper foil with a carrier of the present invention, and embedding the circuit in the manner described above. a step of forming a resin layer on the side surface of the surface treatment layer or the surface of the carrier side of the carrier copper foil, a step of peeling off the carrier or the ultra-thin copper layer, and peeling off the carrier or the ultra-thin copper layer, by removing the above An ultra-thin copper layer or the above-described carrier, and a step of embedding the circuit embedded in the resin layer on the side surface of the surface treatment layer or the side surface of the carrier.

此處,利用圖式詳細地說明使用有本發明之附載體銅箔之印刷配線板之製造方法的具體例。再者,此處,以具有形成有粗化處理層來作為表面處理層之極薄銅層之附載體銅箔為例進行說明,但並不限於此,使用該表面處理層並非為粗化處理層之附載體銅箔,亦可同樣地進行下述印刷配線板之製造方法。 Here, a specific example of a method of manufacturing a printed wiring board using the copper foil with a carrier of the present invention will be described in detail with reference to the drawings. Here, a copper foil with a carrier having an extremely thin copper layer as a surface treatment layer formed with a roughened layer is described as an example, but the invention is not limited thereto, and the surface treatment layer is not roughened. The carrier copper foil to which the layer is attached can also be similarly produced by the following method of manufacturing a printed wiring board.

首先,如圖1-A所示,準備具有表面形成有粗化處理層之極薄銅層的附載體銅箔(第1層)。 First, as shown in Fig. 1-A, a carrier-attached copper foil (first layer) having an extremely thin copper layer having a roughened layer formed thereon is prepared.

其次,如圖1-B所示,於極薄銅層之粗化處理層上塗佈抗蝕劑,進行曝光、顯影而將抗蝕劑蝕刻為特定形狀。 Next, as shown in FIG. 1-B, a resist is applied onto the roughened layer of the ultra-thin copper layer, exposed and developed, and the resist is etched into a specific shape.

其次,如圖1-C所示,藉由於形成電路用鍍層後去除抗蝕劑,而形成特定形狀之電路鍍層。 Next, as shown in FIG. 1-C, a circuit plating of a specific shape is formed by forming a plating layer for a circuit and removing the resist.

其次,如圖2-D所示,以被覆電路鍍層之方式(以埋沒電路鍍層之方 式)於極薄銅層上設置埋入樹脂而積層樹脂層,繼而自極薄銅層側接著另一附載體銅箔(第2層)。 Secondly, as shown in Figure 2-D, the coating is coated on the circuit (to the side of the buried circuit plating) A resin layer is laminated on the ultra-thin copper layer to form a resin layer, and then another carrier copper foil (second layer) is attached from the side of the ultra-thin copper layer.

其次,如圖2-E所示,自第2層之附載體銅箔剝離載體。 Next, as shown in Fig. 2-E, the carrier is peeled off from the carrier copper foil of the second layer.

其次,如圖2-F所示,於樹脂層之特定位置進行雷射開孔,使電路鍍層露出而形成盲孔。 Next, as shown in Fig. 2-F, a laser opening is performed at a specific position of the resin layer to expose the circuit plating layer to form a blind hole.

其次,如圖3-G所示,於盲孔中埋入銅,形成通孔填充物。 Next, as shown in FIG. 3-G, copper is buried in the blind via to form a via fill.

其次,如圖3-H所示,於通孔填充物上,以上述圖1-B及圖1-C之方式形成電路鍍層。 Next, as shown in FIG. 3-H, a circuit plating layer is formed on the via fill material in the manner of FIGS. 1-B and 1-C described above.

其次,如圖3-I所示,自第1層之附載體銅箔剝離載體。 Next, as shown in Fig. 3-I, the carrier was peeled off from the carrier copper foil of the first layer.

其次,如圖4-J所示,藉由快速蝕刻去除兩表面之極薄銅層,使樹脂層內之電路鍍層之表面露出。 Next, as shown in Fig. 4-J, the extremely thin copper layer on both surfaces is removed by rapid etching to expose the surface of the circuit plating layer in the resin layer.

其次,如圖4-K所示,於樹脂層內之電路鍍層上形成凸塊,於該焊料上形成銅柱。如此製作使用有本發明之附載體銅箔之印刷配線板。 Next, as shown in Fig. 4-K, bumps are formed on the circuit plating layer in the resin layer, and copper pillars are formed on the solder. A printed wiring board using the copper foil with a carrier of the present invention was produced in this manner.

上述另一附載體銅箔(第2層)可使用本發明之附載體銅箔,可使用先前之附載體銅箔,進而亦可使用通常之銅箔。又,可於圖3-H所示之第2層電路上進一步形成1層或複數層電路,可藉由半加成法、減成法、部分加成法或改良半加成法中之任一種方法而形成該等電路。 The above-mentioned other carrier copper foil (second layer) may be a copper foil with a carrier of the present invention, and a conventional copper foil with a carrier may be used, and a usual copper foil may be used. Further, a layer 1 or a plurality of layers may be further formed on the second layer circuit shown in FIG. 3-H, and may be a semi-additive method, a subtractive method, a partial addition method or a modified semi-additive method. One method forms the circuits.

又,上述第1層中使用之附載體銅箔亦可於該附載體銅箔之載體側表面具有基板。藉由具有該基板,第1層中使用之附載體銅箔得到支持,變得不易產生皺褶,因此有生產性提高之優點。再者,只要上述基板發揮支持上述第1層中使用之附載體銅箔的效果,則可使用全部基板。例如,可使用本案說明書中記載之載體、預浸體、樹脂層或公知之載體、 預浸體、樹脂層、金屬板、金屬箔、無機化合物之板、無機化合物之箔、有機化合物之板、有機化合物之箔作為上述基板。 Further, the copper foil with a carrier used in the first layer may have a substrate on the side of the carrier side of the copper foil with the carrier. By having such a substrate, the copper foil with a carrier used for the first layer is supported, and wrinkles are less likely to occur, so that productivity is improved. Further, all of the substrates can be used as long as the substrate exhibits an effect of supporting the copper foil with a carrier used in the first layer. For example, a carrier, a prepreg, a resin layer or a known carrier described in the specification can be used. A prepreg, a resin layer, a metal plate, a metal foil, a plate of an inorganic compound, a foil of an inorganic compound, a plate of an organic compound, and a foil of an organic compound are used as the above substrate.

於載體側表面形成基板之時間點並無特別限制,但必須於剝離載體前形成。尤其是,較佳為於在上述附載體銅箔之上述極薄銅層側表面形成樹脂層的步驟前形成,更佳為於在附載體銅箔之上述極薄銅層側表面形成電路的步驟前形成。 The time at which the substrate is formed on the side surface of the carrier is not particularly limited, but it must be formed before the carrier is peeled off. In particular, it is preferably formed before the step of forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with a carrier, and more preferably a step of forming a circuit on the side surface of the ultra-thin copper layer of the copper foil with a carrier. Formed before.

再者,埋入樹脂(resin)可使用公知之樹脂、預浸體。可使用例如BT(雙順丁烯二醯亞胺三)樹脂或含浸BT樹脂之玻璃布即預浸體、Ajinomoto Fine-Techno股份有限公司製造之ABF膜或ABF。又,上述埋入樹脂可含有熱硬化性樹脂,亦可為熱塑性樹脂。又,上述埋入樹脂亦可含有熱塑性樹脂。上述埋入樹脂之種類並無特別限定,作為較佳者,例如可列舉:包括環氧樹脂、聚醯亞胺樹脂、多官能性氰酸酯化合物、順丁烯二醯亞胺化合物、聚乙烯醇縮乙醛樹脂、胺酯樹脂、嵌段共聚合聚醯亞胺樹脂、嵌段共聚合聚醯亞胺樹脂等在內的樹脂,或者紙基材酚系樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂、聚酯膜、聚醯亞胺膜、液晶聚合物膜、氟樹脂膜等。 Further, a well-known resin or prepreg can be used as the resin. For example, BT (bis-non-butenylene diimide III can be used A resin or a glass cloth impregnated with a BT resin, that is, a prepreg, an ABF film manufactured by Ajinomoto Fine-Techno Co., Ltd. or ABF. Further, the embedded resin may contain a thermosetting resin or a thermoplastic resin. Further, the embedded resin may contain a thermoplastic resin. The type of the embedded resin is not particularly limited, and examples thereof include an epoxy resin, a polyimide resin, a polyfunctional cyanate compound, a maleimide compound, and polyethylene. a resin such as an acetal resin, an amine ester resin, a block copolymerized polyimine resin, a block copolymerized polyimide resin, or a paper base material phenol resin or paper substrate epoxy resin, Synthetic fiber cloth substrate epoxy resin, glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, polyester film, polyimide film, A liquid crystal polymer film, a fluororesin film, or the like.

又,本發明的印刷配線板的製造方法亦可為包含下述步驟的印刷配線板的製造方法(無芯法):將本發明之附載體銅箔的上述極薄銅層側表面或上述載體側表面與樹脂基板進行積層之步驟;在與上述和樹脂基板積層的表面處理層側表面或上述載體側表面為相反側的附載體銅箔的表面至少設置1次樹脂層和電路此兩層之步驟;及在形成上述樹脂層及電路 此兩層後,從上述附載體銅箔剝離上述載體或上述極薄銅層之步驟。關於上述無芯法,作為具體的例子,首先,將本發明的附載體銅箔的表面處理層側表面或載體側表面和樹脂基板進行積層。然後,在與和樹脂基板積層的表面處理層側表面或上述載體側表面為相反側的附載體銅箔的表面形成樹脂層。亦可以在形成於載體側表面或表面處理層側表面的樹脂層從載體側或表面處理層側進而積層另一片附載體銅箔。在此情況下,成為如下構成:以樹脂基板為中心,在上述樹脂基板的兩表面側以載體/中間層/極薄銅層/表面處理層的順序或以表面處理層/極薄銅層/中間層/載體的順序積層附載體銅箔。亦可以在兩端的表面處理層或載體所露出的表面設置另一樹脂層,並進而設置銅層或金屬層,然後對上述銅層或金屬層進行加工,由此形成電路。亦可以進而將另一樹脂層以填埋上述電路的方式設置在上述電路上。又,亦可以將此種電路及樹脂層的形成進行1次以上(增層法)。並且,關於以上述方式形成的積層體(以下亦稱為積層體B),可以將各附載體銅箔的極薄銅層或載體從載體或極薄銅層剝離而製作無芯基板。另外,在製作上述無芯基板時,亦可以使用2個附載體銅箔,製作下述具有表面處理層/極薄銅層/中間層/載體/載體/中間層/極薄銅層/表面處理層之構成的積層體、或具有載體/中間層/極薄銅層表面處理層/表面處理層/極薄銅層/中間層/載體之構成的積層體、或具有載體/中間層/極薄銅層/表面處理層/載體/中間層/極薄銅層/表面處理層之構成的積層體,並將上述積層體用於中心。可以在這些積層體(以下亦稱為積層體A)的兩側的極薄銅層或載體的表面設置1次以上樹脂層及電路此兩層,在設置1次以上樹脂層及電路此兩層後,將各附載體銅箔的 極薄銅層或載體從載體或極薄銅層剝離而製作無芯基板。上述積層體在表面處理層的表面、表面處理層與極薄銅層之間、載體的表面、載體與載體之間、表面處理層與表面處理層之間、極薄銅層與載體之間亦可以具有其它層。另外,本說明書中,「表面處理層之表面」、「表面處理層側表面」、「載體之表面」、「載體側表面」、「載體表面」、「積層體之表面」、「積層體表面」,當表面處理層、載體、積層體在表面處理層表面、載體表面、積層體表面具有其它層的情況下,是設為包含上述其它層的表面(最表面)的概念。又,積層體較佳具有表面處理層/極薄銅層/中間層/載體/載體/中間層/極薄銅層/表面處理層的構成。這是由於:在使用上述積層體製作無芯基板時,因為在無芯基板側配置極薄銅層,所以易於使用改良半加成法而在無芯基板上形成電路。又,是由於:因為極薄銅層的厚度薄,所以容易去除上述極薄銅層,去除極薄銅層後易於使用半加成法而在無芯基板上形成電路。 Moreover, the method for producing a printed wiring board according to the present invention may be a method for producing a printed wiring board (coreless method) comprising the above-mentioned ultra-thin copper layer side surface of the copper foil with a carrier of the present invention or the carrier a step of laminating the side surface with the resin substrate; and providing at least one resin layer and the circuit layer on the surface of the carrier-attached copper foil on the side opposite to the surface-treated layer side surface or the carrier-side surface laminated with the resin substrate a step; and forming the above resin layer and circuit After the two layers, the carrier or the ultra-thin copper layer is peeled off from the copper foil with a carrier. Regarding the above-described coreless method, as a specific example, first, the surface treatment layer side surface or the carrier side surface of the copper foil with a carrier of the present invention and a resin substrate are laminated. Then, a resin layer is formed on the surface of the carrier-attached copper foil on the side opposite to the surface-treated layer side surface or the above-described carrier-side surface laminated with the resin substrate. It is also possible to laminate another resin-attached copper foil on the side of the carrier side or the surface treatment layer from the resin layer formed on the side surface of the carrier side or the side surface of the surface treatment layer. In this case, the resin substrate is centered on the both surface sides of the resin substrate in the order of the carrier/intermediate layer/very thin copper layer/surface treatment layer or the surface treatment layer/very thin copper layer/ The intermediate layer/carrier is sequentially laminated with a carrier copper foil. It is also possible to provide another resin layer on the surface of the surface treatment layer or the carrier exposed at both ends, and further to provide a copper layer or a metal layer, and then process the copper layer or the metal layer, thereby forming an electric circuit. Further, another resin layer may be provided on the above circuit so as to fill the above-mentioned circuit. Further, the formation of such a circuit and the resin layer may be performed once or more (growth method). Further, regarding the laminate (hereinafter also referred to as laminate) B formed as described above, the ultra-thin copper layer or carrier of each of the carrier-attached copper foils can be peeled off from the carrier or the ultra-thin copper layer to form a coreless substrate. Further, in the production of the coreless substrate described above, it is also possible to use two copper foils with a carrier to produce the following surface treatment layer/very thin copper layer/intermediate layer/carrier/carrier/intermediate layer/very thin copper layer/surface treatment. a laminated body composed of layers, or a laminated body having a carrier/intermediate layer/very thin copper layer surface treatment layer/surface treatment layer/very thin copper layer/intermediate layer/carrier, or having a carrier/intermediate layer/very thin A laminate of a copper layer/surface treatment layer/carrier/intermediate layer/very thin copper layer/surface treatment layer, and the above-mentioned laminate is used for the center. The resin layer and the circuit layer may be provided one or more times on the surface of the ultra-thin copper layer or the carrier on both sides of the laminated body (hereinafter also referred to as the laminated body A), and the resin layer and the circuit are provided one time or more. After that, each with a carrier copper foil The ultra-thin copper layer or carrier is peeled off from the carrier or the ultra-thin copper layer to form a coreless substrate. The above laminated body is between the surface of the surface treatment layer, the surface treatment layer and the ultra-thin copper layer, the surface of the carrier, the carrier and the carrier, the surface treatment layer and the surface treatment layer, and between the extremely thin copper layer and the carrier. There may be other layers. In the present specification, the "surface of the surface treatment layer", the "surface of the surface treatment layer", the surface of the carrier, the surface of the carrier, the surface of the carrier, the surface of the laminate, and the surface of the laminate When the surface treatment layer, the carrier, and the laminate have other layers on the surface of the surface treatment layer, the surface of the carrier, and the surface of the laminate, the concept is to include the surface (the outermost surface) of the other layer. Further, the laminate preferably has a composition of a surface treatment layer/very thin copper layer/intermediate layer/carrier/carrier/intermediate layer/very thin copper layer/surface treatment layer. This is because when the coreless substrate is produced by using the laminated body described above, since the ultra-thin copper layer is disposed on the coreless substrate side, it is easy to form a circuit on the coreless substrate by using the improved semi-additive method. Further, since the ultra-thin copper layer has a small thickness, the extremely thin copper layer can be easily removed, and after the ultra-thin copper layer is removed, it is easy to form a circuit on the coreless substrate by using a semi-additive method.

另外,在本說明書中,沒有特別記載成「積層體A」或「積層體B」的「積層體」表示至少包含積層體A及積層體B的積層體。 In the present specification, the "layered body" which is not particularly described as "layered body A" or "layered body B" means a layered body including at least the layered body A and the layered body B.

再者,在上述無芯基板的製造方法中,藉由利用樹脂覆蓋附載體銅箔或積層體(積層體A)的端面的一部分或全部,在利用增層法製造印刷配線板時,可以防止化學溶劑滲入到中間層或構成積層體的一片附載體銅箔和另一片附載體銅箔之間,可以防止由化學溶劑的滲入所導致的極薄銅層和載體的分離或附載體銅箔的腐蝕,可以提升良率。作為此處所使用的「覆蓋附載體銅箔之端面的一部分或全部的樹脂」或「覆蓋積層體之端面的一部分或全部的樹脂」,可以使用能夠用於樹脂層的樹脂。又,在 上述無芯基板的製造方法中,在對附載體銅箔或積層體進行俯視時,附載體銅箔或積層體的積層部分(載體和極薄銅層的積層部分、或一片附載體銅箔和另一片附載體銅箔的積層部分)之外周的至少一部分可以由樹脂或預浸體覆蓋。另外,利用上述無芯基板的製造方法所形成的積層體(積層體A)亦可以是使一對附載體銅箔相互以可分離的方式接觸而構成。又,在對上述附載體銅箔進行俯視時,亦可以由樹脂或預浸體覆蓋附載體銅箔或積層體的積層部分(載體和極薄銅層的積層部分、或一片附載體銅箔和另一片附載體銅箔的積層部分)的外周整體。藉由設為此種構成,在俯視附載體銅箔或積層體時,附載體銅箔或積層體的積層部分由樹脂或預浸體覆蓋,可以防止其它部件從此部分之側向、也就是相對於積層方向為橫向的方向碰撞,結果,可以減少操作中載體和極薄銅層或附載體銅箔彼此的剝離。又,藉由以不露出附載體銅箔或積層體之積層部分之外周的方式利用樹脂或預浸體進行覆蓋,可以防止如上所述化學溶劑處理步驟中化學溶劑向上述積層部分的界面的滲入,可以防止附載體銅箔的腐蝕或侵蝕。再者,在從積層體的一對附載體銅箔分離一片附載體銅箔時,或分離附載體銅箔之載體和銅箔(極薄銅層)時,必須藉由切斷等去除利用樹脂或預浸體覆蓋的附載體銅箔或積層體的積層部分(載體和極薄銅層的積層部分、或一片附載體銅箔和另一片附載體銅箔的積層部分)。 Further, in the method for producing a coreless substrate, by covering a part or all of the end faces of the copper foil or the laminate (layered product A) with a resin, it is possible to prevent the printed wiring board from being produced by the build-up method. The chemical solvent penetrates between the intermediate layer or a piece of the carrier-attached copper foil constituting the laminated body and the other copper foil with the carrier, and can prevent the separation of the extremely thin copper layer and the carrier caused by the penetration of the chemical solvent or the carrier-attached copper foil. Corrosion can increase yield. As the "resin covering a part or all of the end surface of the copper foil with a carrier" or "resin covering a part or all of the end surface of the laminated body", a resin which can be used for the resin layer can be used. again In the method for producing a coreless substrate, when the carrier copper foil or the laminate is viewed in plan, a laminated portion of the carrier copper foil or the laminate (a laminate portion of the carrier and the ultra-thin copper layer, or a carrier copper foil and a carrier) is attached. At least a portion of the outer periphery of the other laminated portion of the carrier-attached copper foil may be covered with a resin or a prepreg. Moreover, the laminated body (layered product A) formed by the above-described method for producing a coreless substrate may be configured such that a pair of copper foils with a carrier are detachably contacted with each other. Further, in the plan view of the copper foil with a carrier, the laminated portion of the carrier copper foil or the laminate may be covered with a resin or a prepreg (the laminated portion of the carrier and the ultra-thin copper layer, or a piece of copper foil with a carrier and The outer periphery of the other laminated portion of the carrier copper foil). With such a configuration, when the carrier copper foil or the laminate is viewed in a plan view, the laminated portion of the carrier copper foil or the laminate is covered with a resin or a prepreg, and it is possible to prevent other components from being laterally, that is, relative to each other. Collision in the lateral direction in the direction of the lamination, as a result, peeling of the carrier and the ultra-thin copper layer or the copper foil with the carrier in operation can be reduced. Further, by covering with the resin or the prepreg so as not to expose the outer periphery of the laminated portion with the carrier copper foil or the laminate, it is possible to prevent the penetration of the chemical solvent into the interface of the laminate portion in the chemical solvent treatment step as described above. It can prevent corrosion or erosion of the copper foil with the carrier. Further, when a carrier copper foil is separated from a pair of copper foils of a laminate, or when a carrier with a carrier copper foil and a copper foil (very thin copper layer) are separated, it is necessary to remove the resin or by cutting or the like. The laminated portion of the carrier-attached copper foil or laminate covered with the prepreg (the laminated portion of the carrier and the ultra-thin copper layer, or the laminated portion of the one-piece copper foil and the other carrier-attached copper foil).

亦可以將本發明的附載體銅箔從載體側或表面處理層側積層在另一片本發明之附載體銅箔的載體側或表面處理層側而構成積層體。又,亦可為下述積層體:上述一片附載體銅箔之上述載體側表面或上述表面處理層側表面和上述另一片附載體銅箔的上述載體側表面或上述表面處 理層側表面,視需要經由接著劑直接積層而獲得者。又,亦可將上述一片附載體銅箔之載體或表面處理層和上述另一片附載體銅箔之載體或表面處理層接合。又,亦可以被樹脂覆蓋該積層體之端面的一部分或全部。 The copper foil with a carrier of the present invention may be laminated from the side of the carrier side or the surface treatment layer to the side of the carrier or the surface of the surface of the copper foil with a carrier of the present invention to form a laminate. Further, the laminated body may be: the carrier side surface of the one piece of the carrier-attached copper foil or the surface treatment layer side surface and the carrier side surface or the surface of the other sheet of the carrier copper foil The side surface of the layer is obtained by directly laminating via an adhesive as needed. Further, the carrier or the surface-treated layer of the one piece of the copper foil with a carrier may be bonded to the carrier or the surface treatment layer of the other copper foil with the carrier. Further, a part or all of the end faces of the laminate may be covered with a resin.

載體彼此之積層除了單純地重疊以外,例如可以利用以下方法進行。 The laminate of the carriers can be carried out, for example, by the following method, except for simply overlapping.

(a)冶金接合方法:焊接(電弧焊接、TIG(tungsten inert gas,鎢-惰性氣體)焊接、MIG(metal inert gas,金屬-惰性氣體)焊接、電阻焊接、縫焊接、點焊接)、壓接(超音波焊接、摩擦攪拌焊接)、軟焊; (b)機械接合方法:斂縫、利用鉚釘的接合(利用自沖鉚的接合、利用鉚釘的接合)、裝訂機; (c)物理接合方法:接著劑、(雙面)膠帶 (a) Metallurgical joining method: welding (arc welding, TIG (tungsten inert gas) welding, MIG (metal inert gas) welding, resistance welding, seam welding, spot welding), crimping (ultrasonic welding, friction stir welding), soldering; (b) Mechanical joining method: caulking, joining by rivets (joining by self-piercing riveting, joining by rivets), binding machine; (c) Physical bonding method: adhesive, (double-sided) tape

藉由將一載體的一部分或全部和另一載體的一部分或全部使用上述接合方法進行接合,可以製造將一載體和另一載體積層,使載體彼此以可分離的方式接觸而構成的積層體。若一載體和另一載體較弱地連接,則在將一載體和另一載體積層的情況下,即使不去除一載體和另一載體的連接部,亦可以將一載體和另一載體分離。另外,在一載體和另一載體較強地連接的情況下,藉由將一載體和另一載體連接的部位利用切斷或化學研磨(蝕刻等)、機械研磨等去除,可以分離一載體和另一載體。 By joining a part or all of one carrier to a part or all of the other carrier by the above-described joining method, it is possible to manufacture a laminated body in which one carrier and another carrier layer are brought into contact with each other in a separable manner. If one carrier and the other carrier are weakly connected, in the case of one carrier and another carrier layer, one carrier can be separated from the other carrier without removing the connection between one carrier and the other carrier. In addition, in the case where one carrier and the other carrier are strongly connected, a carrier and a portion to which the other carrier is connected may be separated by cutting or chemical polishing (etching, etc.), mechanical polishing, or the like, thereby separating a carrier and Another carrier.

又,可以藉由實施如下步驟而製作印刷配線板:在以上述方式構成的積層體至少設置1次樹脂層和電路此兩層之步驟;及在至少形成1次上述樹脂層及電路此兩層後,從上述積層體的附載體銅箔剝離上述極薄銅層或載體之步驟。再者,亦可以在該積層體的一個表面或兩個表面設置 樹脂層和電路此兩層。 Further, a printed wiring board can be produced by performing the steps of: providing at least one step of the resin layer and the circuit layer in the laminated body configured as described above; and forming the resin layer and the circuit layer at least once. Thereafter, the step of peeling off the ultra-thin copper layer or the carrier from the copper foil with a carrier of the above laminated body is carried out. Furthermore, it is also possible to provide one surface or two surfaces of the laminated body. The resin layer and the circuit are two layers.

[實施例] [Examples]

以下,基於實驗例進行說明。再者,本實驗例僅為一例,並不僅限制於該例。 Hereinafter, description will be made based on an experimental example. Furthermore, this experimental example is merely an example and is not limited to this example.

1.附載體銅箔之製造 1. Manufacture of carrier copper foil

利用以下的順序,製作附載體銅箔。 The carrier copper foil was produced by the following procedure.

首先,準備表1所記載之厚度的長電解銅箔或壓延銅箔來作為載體。 First, a long electrolytic copper foil or a rolled copper foil having the thickness shown in Table 1 was prepared as a carrier.

電解銅箔利用下述條件來製造。 The electrolytic copper foil was produced under the following conditions.

(電解浴組成) (electrolytic bath composition)

Cu:80~120g/L Cu: 80~120g/L

H2SO4:80~120g/L H 2 SO 4 : 80~120g/L

Cl:20~80mg/L Cl: 20~80mg/L

清漆:0.1~6.0mg/L Varnish: 0.1~6.0mg/L

(電解條件) (electrolysis conditions)

液溫:55~65℃ Liquid temperature: 55~65°C

電流密度:100A/dm2 Current density: 100A/dm 2

電解液流速:1.5m/秒 Electrolyte flow rate: 1.5m / sec

壓延銅箔於例9、12係使用精銅(JIS H3100 C1100所規定的精銅),於例10、11係使用無氧銅(JIS H3100 C1020所規定的無氧銅)。表1之載體的種類欄之「壓延銅箔(Ag180ppm)」係指於精銅中添加有180質量ppm之Ag。 In the rolled copper foil, fine copper (fine copper specified in JIS H3100 C1100) was used in Examples 9 and 12, and oxygen-free copper (oxygen-free copper specified in JIS H3100 C1020) was used in Examples 10 and 11. The "rolled copper foil (Ag 180 ppm)" in the type column of the carrier of Table 1 means that 180 mass ppm of Ag is added to the refined copper.

<實驗例之中間層> <Intermediate layer of experimental example>

對上述銅箔之光澤面(shiny surface)利用以下條件於輥對輥型之連續鍍敷線上,藉由電鍍而形成中間層。 The shiny surface of the copper foil was formed on the continuous plating line of the roll-to-roll type by the following conditions, and an intermediate layer was formed by electroplating.

‧Ni層 ‧Ni layer

硫酸鎳:250~300g/L Nickel sulfate: 250~300g/L

氯化鎳:35~45g/L Nickel chloride: 35~45g/L

乙酸鎳:10~20g/L Nickel acetate: 10~20g/L

檸檬酸三鈉:15~30g/L Trisodium citrate: 15~30g/L

光澤劑:糖精、丁炔二醇等 Gloss agent: saccharin, butynediol, etc.

十二烷基硫酸鈉:30~100ppm Sodium lauryl sulfate: 30~100ppm

pH:4~6 pH: 4~6

浴溫:50~70℃ Bath temperature: 50~70°C

電流密度:3~15A/dm2 Current density: 3~15A/dm 2

附著量:4000μg/dm2 Adhesion: 4000μg/dm 2

於水洗及酸洗後,接著於輥對輥型之連續鍍敷線上,利用以下條件藉由電解鉻酸鹽處理而使附著量為10μg/dm2的Cr層附著於Ni層上。 After washing with water and pickling, a Cr layer having an adhesion amount of 10 μg/dm 2 was adhered to the Ni layer by electrolytic chromate treatment on a continuous roll line of a roll-to-roll type under the following conditions.

‧電解鉻酸鹽處理 ‧ electrolytic chromate treatment

液體組成:重鉻酸鉀1~10g/L、鋅0~5g/L Liquid composition: potassium dichromate 1~10g/L, zinc 0~5g/L

pH:3~4 pH: 3~4

液溫:50~60℃ Liquid temperature: 50~60°C

電流密度:0.1~2.6A/dm2 Current density: 0.1~2.6A/dm 2

庫倫量:0.5~30As/dm2 Coulomb amount: 0.5~30As/dm 2

<實驗例之極薄銅層> <Extremely thin copper layer of experimental example>

接著,於輥對輥型之連續鍍敷線上,利用以下條件藉由電鍍而於中間層上形成厚度3μm之極薄銅層,從而製得附載體銅箔。 Next, on the continuous plating line of the roll-to-roll type, an extremely thin copper layer having a thickness of 3 μm was formed on the intermediate layer by electroplating under the following conditions, thereby producing a copper foil with a carrier.

‧極薄銅層 ‧ very thin copper layer

銅濃度:30~120g/L Copper concentration: 30~120g/L

H2SO4濃度:20~120g/L H 2 SO 4 concentration: 20~120g/L

電解液溫度:20~80℃ Electrolyte temperature: 20~80°C

電流密度:10~100A/dm2 Current density: 10~100A/dm 2

<實驗例之表面處理層> <surface treatment layer of experimental example>

利用以下之表面處理條件而對上述極薄銅層之表面進行表面處理。將藉由該表面處理而形成之表面處理層的層構成示於表1。 The surface of the above ultra-thin copper layer was subjected to surface treatment using the following surface treatment conditions. The layer constitution of the surface treatment layer formed by the surface treatment is shown in Table 1.

於一部份的實驗例中,對上述極薄銅層之表面以下述條件進行選自Cu-W合金鍍敷、Cu-P合金鍍敷、Cu-Co-Ni合金鍍敷中之一種鍍敷來作為粗化處理。 In a part of the experimental examples, the surface of the ultra-thin copper layer is subjected to a plating selected from the group consisting of Cu-W alloy plating, Cu-P alloy plating, and Cu-Co-Ni alloy plating under the following conditions. Come as a roughing process.

‧Cu-W合金鍍敷(例1、2、15、16) ‧Cu-W alloy plating (examples 1, 2, 15, 16)

液體組成:Cu 15g/公升、硫酸100g/公升、W 5mg/公升 Liquid composition: Cu 15g / liter, sulfuric acid 100g / liter, W 5mg / liter

溫度:25℃ Temperature: 25 ° C

(第一階段) (The first stage)

電流密度(Dk):90A/dm2 Current density (D k ): 90A/dm 2

時間:1.5秒 Time: 1.5 seconds

(第二階段) (second stage)

電流密度(Dk):20A/dm2 Current density (D k ): 20A/dm 2

時間:3秒 Time: 3 seconds

‧Cu-P合金鍍敷(例3、4) ‧Cu-P alloy plating (Examples 3 and 4)

液體組成:Cu 30g/公升、硫酸100g/公升、P 500mg/公升 Liquid composition: Cu 30g / liter, sulfuric acid 100g / liter, P 500mg / liter

溫度:30℃ Temperature: 30 ° C

(第一階段) (The first stage)

電流密度(Dk):140A/dm2 Current density (D k ): 140A/dm 2

時間:0.6秒 Time: 0.6 seconds

(第二階段) (second stage)

電流密度(Dk):20A/dm2 Current density (D k ): 20A/dm 2

時間:2.0秒 Time: 2.0 seconds

‧Cu-Co-Ni合金鍍敷(例5、6、14) ‧Cu-Co-Ni alloy plating (Examples 5, 6, 14)

液體組成:Cu 15g/公升、Co 8g/公升、Ni 8g/公升 Liquid composition: Cu 15g / liter, Co 8g / liter, Ni 8g / liter

pH:1~3 pH: 1~3

溫度:40℃ Temperature: 40 ° C

(第一階段) (The first stage)

電流密度(Dk):45A/dm2 Current density (D k ): 45A/dm 2

時間:0.6秒 Time: 0.6 seconds

(第二階段) (second stage)

電流密度(Dk):30A/dm2 Current density (D k ): 30A/dm 2

時間:0.8秒 Time: 0.8 seconds

接著,依序進行選自以下的耐熱處理、防銹處理、鉻酸鹽處理、矽烷偶合處理中之至少一種以上的處理。於進行各處理前進行表面的水洗淨。 Next, at least one or more types of heat treatment, rust prevention treatment, chromate treatment, and decane coupling treatment selected from the following are sequentially performed. The surface was washed with water before each treatment.

‧耐熱處理(形成耐熱層) ‧ Heat-resistant treatment (formation of heat-resistant layer)

液體組成:Co 1~8g/公升、Ni 10~20g/公升 Liquid composition: Co 1~8g/L, Ni 10~20g/L

pH:2~3 pH: 2~3

溫度:40℃ Temperature: 40 ° C

電流密度(Dk):5A/dm2 Current density (D k ): 5A/dm 2

時間:1.0秒 Time: 1.0 seconds

‧防銹處理(形成防銹層) ‧Anti-rust treatment (formation of anti-rust layer)

液體組成:Ni 15~30g/公升、Zn 1~10g/公升 Liquid composition: Ni 15~30g/L, Zn 1~10g/L

pH:2~4 pH: 2~4

溫度:40℃ Temperature: 40 ° C

電流密度(Dk):5A/dm2 Current density (D k ): 5A/dm 2

時間:1.0秒 Time: 1.0 seconds

‧電解鉻酸鹽處理(形成鉻酸鹽處理層) ‧ electrolytic chromate treatment (formation of chromate treatment layer)

液體組成:K2Cr2O7:1~10g/公升、Zn:0~5g/公升 Liquid composition: K 2 Cr 2 O 7 : 1~10g / liter, Zn: 0 ~ 5g / liter

pH:2~4 pH: 2~4

溫度:40℃ Temperature: 40 ° C

電流密度(Dk):1A/dm2 Current density (D k ): 1A/dm 2

時間:1.0秒 Time: 1.0 seconds

‧矽烷偶合處理(形成矽烷偶合處理層) ‧ decane coupling treatment (formation of decane coupling treatment layer)

藉由於被處理面噴塗1.0體積%之3-環氧丙氧基丙基三甲氧基矽烷水溶液而進行矽烷偶合劑塗佈處理後,於70℃以上200℃以下之環境中進行2秒鐘以上之乾燥,從而去除表面之水分。 After the decane coupling agent is applied by spraying a 1.0% by volume aqueous solution of 3-glycidoxypropyltrimethoxydecane on the treated surface, the solution is applied in an environment of 70° C. or higher and 200° C. or lower for 2 seconds or more. Dry to remove moisture from the surface.

‧樹脂層(例13、14、15) ‧Resin layer (Examples 13, 14, 15)

樹脂層之塗佈係使用凹版塗佈法將硬化前之樹脂塗佈於極薄銅層側表面後,使用刮刀將樹脂塗膜之厚度調整為10μm,於200℃之乾燥環境中一邊使溶劑揮發一邊使樹脂成分硬化。再者,所使用之樹脂係使用環氧樹脂(DIC股份有限公司製造之雙酚A型環氧樹脂)。 The coating of the resin layer was applied to the side surface of the ultra-thin copper layer by a gravure coating method, and then the thickness of the resin coating film was adjusted to 10 μm using a doctor blade, and the solvent was volatilized in a dry environment at 200 ° C. The resin component is hardened. Further, an epoxy resin (bisphenol A type epoxy resin manufactured by DIC Corporation) was used as the resin to be used.

再者,於例16中,亦對與極薄銅層側為相反側之載體表面進行上述粗化處理(Cu-W合金鍍敷)、耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層之表面處理。 Further, in Example 16, the surface of the carrier opposite to the side of the ultra-thin copper layer was subjected to the above-described roughening treatment (Cu-W alloy plating), heat-resistant layer, rust-preventing layer, chromate-treated layer, and decane. The surface treatment of the coupling treatment layer.

-加熱處理- - Heat treatment -

接著,對各附載體銅箔進行下述加熱處理來作為加熱處理:在具有99.9%以上之純度的氮氣環境下,利用表2~4所記載之條件來進行加熱處理。表2~4之升溫速度係至初次到達熱處理條件中所記載之溫度(加熱溫度)為止的升溫速度。熱處理後之至常溫為止的冷卻時間為1~6小時。 Next, each of the carrier-attached copper foils was subjected to heat treatment as follows: heat treatment was carried out under the conditions of the conditions described in Tables 2 to 4 in a nitrogen atmosphere having a purity of 99.9% or more. The temperature increase rate in Tables 2 to 4 is the temperature increase rate up to the temperature (heating temperature) described in the first heat treatment condition. The cooling time until the normal temperature after the heat treatment is 1 to 6 hours.

又,關於例1~16,係於將附載體銅箔捲入至不銹鋼製的中空管(外徑11cm、厚度0.5cm)中的狀態下進行加熱處理。 Further, in the examples 1 to 16, the heat-treated treatment was carried out in a state in which the copper foil with a carrier was taken up in a hollow tube (outer diameter: 11 cm, thickness: 0.5 cm) made of stainless steel.

又,關於例1~16,係將捲入該中空管時之張力分別設為表2~4所記載之設定而進行加熱處理。 Further, in Examples 1 to 16, the tensions when the hollow tubes were wound were set to the settings described in Tables 2 to 4, and heat treatment was performed.

又,將該中空管之旋轉速度分別設為表2~4所記載之設定而進行加熱處理。 Further, the rotation speed of the hollow tube was set to the settings described in Tables 2 to 4, and heat treatment was performed.

2.附載體銅箔之評價 2. Evaluation of carrier copper foil

針對以上述方式製得之例1~16的附載體銅箔於加熱處理前及加熱處理後分別進行以下的評價試驗。將評價結果示於表2~4。再者,關於表2~4之加熱後的實驗例之編號的記載,例如,「例1-1」~「例1-50」係表示分別將加熱前之試樣即「例1」進行加熱後之試樣。 The copper foil with respect to the examples 1 to 16 obtained in the above manner was subjected to the following evaluation tests before and after the heat treatment. The evaluation results are shown in Tables 2 to 4. In addition, in the description of the number of the experimental examples after the heating in Tables 2 to 4, for example, "Example 1-1" to "Example 1-50" indicate that "Example 1" which is a sample before heating is heated. After the sample.

-蝕刻液之潤濕性評價- - Evaluation of wettability of etching solution -

於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液。由於硫酸-過氧化氫系蝕刻液會一邊溶解表面處理層及其基底之極薄銅層而一邊使潤濕變大,因此可判斷為若液滴的痕跡接近正圓則表面附近之蝕刻液的潤濕性均勻,若為橢圓形則為不均勻。又,液滴的痕跡之最大直徑愈大則蝕刻液之潤濕愈好,可說是利用蝕刻液之去除性良好。 Place the copper foil with a carrier on the surface of the ultra-thin copper foil on the upper surface in the above manner (except for the resin layer), and add 30 μL of sulfuric acid to a portion by using a pipette to absorb 24% by weight of sulfuric acid. An etching solution having a composition of 15% by weight of hydrogen (the remainder being water) was left for 30 seconds and then the etching solution was wiped off. Since the sulfuric acid-hydrogen peroxide-based etching liquid dissolves the surface of the surface treatment layer and the extremely thin copper layer of the base thereof, it can be judged that if the trace of the liquid droplet is close to a perfect circle, the etching liquid near the surface The wettability is uniform, and if it is elliptical, it is uneven. Further, the larger the maximum diameter of the trace of the droplet, the better the wetting of the etching liquid, and the removability by the etching solution is good.

‧潤濕均勻性 ‧ Wetting uniformity

此處,測定液滴之痕跡的最大直徑與最小直徑,若最大直徑與最小直徑之差在10mm以下,則評價為蝕刻液之潤濕性十分均勻(表2~4:潤濕均勻性之欄「○」),若在5mm以下,則評價為更進一步地均勻(表2~4: 潤濕均勻性之欄「◎」)。又,於液滴之痕跡的最大直徑與最小直徑之差比10mm大之情形時,評價為蝕刻液潤濕性不夠均勻(表2~4:潤濕均勻性之欄「×」)。此處,表2~4之「潤濕均勻性 最大-最小」係利用「液滴之痕跡的最大直徑(mm)-液滴之痕跡的最小直徑(mm)」來算出。 Here, the maximum diameter and the minimum diameter of the trace of the droplet are measured. If the difference between the maximum diameter and the minimum diameter is 10 mm or less, it is evaluated that the wettability of the etching liquid is very uniform (Table 2 to 4: Wetting uniformity column) "○"), if it is 5 mm or less, it is evaluated to be even more uniform (Tables 2 to 4: Wet uniformity column "◎"). Further, in the case where the difference between the maximum diameter and the minimum diameter of the trace of the liquid droplet is larger than 10 mm, it is evaluated that the wettability of the etching liquid is not uniform enough (Tables 2 to 4: "X" in the column of wettability uniformity). Here, the "wet uniformity maximum-minimum" of Tables 2 to 4 is calculated by "the maximum diameter (mm) of the trace of the droplet - the minimum diameter (mm) of the trace of the droplet".

‧潤濕性 ‧ wettability

測定液滴之痕跡的最大直徑,若最大直徑為25mm以上,則評價為蝕刻液潤濕性夠良好(表2~4:潤濕性之欄「○」),若為35mm以上,則評價為更佳地良好(表2~4:潤濕性之欄「◎」)。又,於最大直徑未達25mm之情形,評價為蝕刻液潤濕性不足(表2~4:潤濕性之欄「×」)。此處,表2~4之「潤濕性 最大直徑」係設為「液滴之痕跡的最大直徑(mm)」。 When the maximum diameter of the trace of the liquid droplet is measured, if the maximum diameter is 25 mm or more, it is evaluated that the wettability of the etching liquid is good enough (Tables 2 to 4: column of wettability "○"), and if it is 35 mm or more, it is evaluated as More preferably, it is good (Tables 2 to 4: column of wettability "◎"). Further, in the case where the maximum diameter was less than 25 mm, it was evaluated that the wettability of the etching liquid was insufficient (Tables 2 to 4: "X" in the column of wettability). Here, the "waste maximum diameter" in Tables 2 to 4 is "the maximum diameter (mm) of the trace of the droplet".

再者,於上述之「潤濕均勻性」與「潤濕性」之評價中,將包圍住液滴之痕跡的圓之最小直徑設為「液滴之痕跡的最大直徑」,將液滴之痕跡中所含有之圓的最大直徑設為「液滴之痕跡的最小直徑」。 Furthermore, in the evaluation of "wet uniformity" and "wetability" described above, the minimum diameter of the circle surrounding the trace of the droplet is referred to as "the maximum diameter of the trace of the droplet", and the droplet is The maximum diameter of the circle contained in the trace is set to "the minimum diameter of the trace of the droplet".

-載體之拉伸強度的評價- - Evaluation of tensile strength of the carrier -

以下述方式來測定於加熱處理步驟後在常溫下所測定之載體之拉伸強度。 The tensile strength of the carrier measured at room temperature after the heat treatment step was measured in the following manner.

首先,對所製得之附載體銅箔剝離載體。接著,針對該載體根據JIS Z 2241並利用拉伸試驗來求得抗拉強度(拉伸強度)。 First, the carrier was peeled off from the obtained carrier copper foil. Next, the tensile strength (tensile strength) of the carrier was determined by a tensile test in accordance with JIS Z 2241.

-電路直線(電路形成性)之評價- - Evaluation of circuit straight line (circuit formation) -

藉由熱壓接將附載體銅箔之極薄銅箔側貼合於雙順丁烯二醯亞胺三樹脂預浸體後,剝離載體而將其去除,接著,以L/S=21μm/9μm的方式於露出的極薄銅層表面形成寬度21μm的圖案鍍銅層(極薄銅層與圖案 鍍銅層之厚度合計為16.5μm),再來,藉由以下的蝕刻條件,對圖案鍍銅層進行快速蝕刻直至形成為電路上端之寬度為12~15μm之鍍銅層從而形成電路。接著,如圖5所示般,測定從電路上面觀測到之電路下端之寬度的最大值與最小值的差(μm),求出測定5個部位而得的平均值。若最大值與最小值之差在2μm以下,則判斷為具有良好的電路直線性,評價為◎。又,當該最大值與最小值之差超過2μm且在4μm以下時,則評價為○。又,當該最大值與最小值之差超過4μm時,評價為×。 The extremely thin copper foil side of the copper foil with a carrier is attached to the bis-s-butylene diimide by thermocompression bonding After the resin prepreg, the carrier was peeled off and removed, and then a pattern copper plating layer having a width of 21 μm was formed on the surface of the exposed ultra-thin copper layer in an L/S=21 μm/9 μm (very thin copper layer and pattern copper plating) The thickness of the layer was 16.5 μm in total. Further, the pattern copper plating layer was quickly etched by the following etching conditions until a copper plating layer having a width of 12 to 15 μm at the upper end of the circuit was formed to form a circuit. Next, as shown in FIG. 5, the difference (μm) between the maximum value and the minimum value of the width of the lower end of the circuit observed from the upper surface of the circuit was measured, and the average value obtained by measuring five parts was obtained. When the difference between the maximum value and the minimum value was 2 μm or less, it was judged to have good circuit linearity, and it was evaluated as ◎. Further, when the difference between the maximum value and the minimum value exceeds 2 μm and is 4 μm or less, it is evaluated as ○. Further, when the difference between the maximum value and the minimum value exceeds 4 μm, it is evaluated as ×.

(蝕刻條件) (etching conditions)

‧蝕刻形式:噴霧蝕刻 ‧ etching form: spray etching

‧噴嘴:實心圓錐型 ‧Nozzle: solid conical

‧噴壓:0.10MPa ‧ spray pressure: 0.10MPa

‧蝕刻液溫度:30℃ ‧ etching solution temperature: 30 ° C

‧蝕刻液組成: ‧ etching solution composition:

H2O2 18g/L H 2 O 2 18g/L

H2SO4 92g/L H 2 SO 4 92g/L

Cu 8g/L Cu 8g/L

添加劑:JCU股份有限公司製造之FE-830IIW3C適量 Additive: FE-830IIW3C manufactured by JCU Co., Ltd.

-皺褶之觀察- - observation of wrinkles -

目視觀察各實驗例之加熱處理後的極薄銅層表面在長度5m之範圍下有無皺褶。可確認到長度10cm以上之皺褶的部位為0個部位時,評價為◎,為1個部位時評價為○,為2個部位時評價為△,為3個部位以上時評價為×。 The surface of the ultra-thin copper layer after the heat treatment of each experimental example was visually observed to have wrinkles in the range of 5 m in length. When the number of the wrinkles having a length of 10 cm or more was zero, it was evaluated as ◎, and when it was one site, it was evaluated as ○, when it was two sites, it was evaluated as Δ, and when it was three sites or more, it was evaluated as ×.

-氧化程度- - Degree of oxidation -

對於各實驗例,於加熱處理後,將1卷卷開,對第2卷之長度為1m的試樣以目視進行觀察。此時,氧化所導致之變色面積為5%以下者評價為◎,氧化所導致之變色面積超過5%且在10%以下者評價為○○,氧化所導致之變色面積超過10%且在15%以下者評價為○,氧化所導致之變色面積超過15%且在20%以下者評價為△,氧化所導致之變色面積超過20%者評價為×。 For each experimental example, after the heat treatment, one roll was wound up, and the sample of the second roll having a length of 1 m was visually observed. In this case, the area of discoloration caused by oxidation was 5% or less, and the area of discoloration due to oxidation was more than 5%, and when it was 10% or less, it was evaluated as ○○, and the area of discoloration caused by oxidation was more than 10% and at 15 % or less was evaluated as ○, the area of discoloration caused by oxidation was more than 15%, and when it was 20% or less, it was evaluated as Δ, and the area of discoloration caused by oxidation was more than 20%, and it was evaluated as ×.

將試験條件及評價結果示於表1~4。 The test conditions and evaluation results are shown in Tables 1 to 4.

(評價結果) (Evaluation results)

例1-1~例1-48、例2-1~例2-3、例3-5~例3-13、例4-1~例16-1其電路直線性(電路形成性)皆良好。關於例1~例4、例7~例10、例14~例16,了解到:於加熱處理前雖然電路直線性(電路形成性)不良,但是藉由適當的加熱處理,電路直線性(電路形成性)被改善。 Examples 1-1 to 1-4, 2-1 to 2-3, 3-5 to 3-13, and 4-1 to 16-1 have good circuit linearity (circuit formation). . In Examples 1 to 4, Examples 7 to 10, and Examples 14 to 16, it was found that although the circuit linearity (circuit formation property) was poor before the heat treatment, the circuit linearity (circuitry) was performed by appropriate heat treatment. Formative) was improved.

再者,關於例1-1~例1-48、例2-1~例2-6、例3-5~例3-13、例4-1~例8-1、例11-1及例16-1,其蝕刻液之潤濕性亦皆良好。 Further, regarding Examples 1-1 to 1-48, Examples 2-1 to 2-6, Examples 3-5 to 3-13, Examples 4-1 to 8-1, and Examples 11-1 and Examples 16-1, the wettability of the etching solution is also good.

例1-49其加熱處理之溫度低,電路直線性(電路形成性)為不良。 In Example 1-49, the temperature of the heat treatment was low, and the circuit linearity (circuit formation property) was poor.

例1-50其加熱處理之時間短,電路直線性(電路形成性)為不良。 In Example 1-50, the heat treatment time was short, and the circuit linearity (circuit formation property) was poor.

例2-4其加熱處理之時間長,晶粒粗大化導致電路直線性(電路形成性)變得不良。 In Example 2-4, the heat treatment time was long, and the crystal grain coarsening caused the circuit linearity (circuit formation property) to become poor.

例2-5及2-6其加熱處理之溫度高,晶粒粗大化導致電路直線性(電路形成性)變得不良。 In Examples 2-5 and 2-6, the temperature of the heat treatment was high, and the crystal grain was coarsened, which caused the circuit linearity (circuit formation property) to be poor.

例3-1~例3-4其加熱處理之升溫速度小,電路直線性(電路形成性)為不良。 In Examples 3-1 to 3-4, the heating rate of the heat treatment was small, and the circuit linearity (circuit formation property) was poor.

Claims (45)

一種附載體銅箔之製造方法,其包含下述加熱處理步驟:對依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層的附載體銅箔,進行1小時~8小時之加熱溫度為100℃~220℃的加熱處理,或1小時~6小時之加熱溫度為100℃~220℃的加熱處理,或2小時~4小時之加熱溫度為160℃~220℃的加熱處理;上述加熱處理步驟後於常溫下所測得之載體的拉伸強度為300MPa以上。 A method for producing a copper foil with a carrier comprising the step of heat-treating a carrier-attached copper foil having a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer containing a decane coupling treatment layer in this order for 1 hour. 8 hours heating temperature is 100 ° C ~ 220 ° C heating treatment, or 1 hour ~ 6 hours heating temperature is 100 ° C ~ 220 ° C heating treatment, or 2 hours ~ 4 hours heating temperature is 160 ° C ~ 220 ° C Heat treatment; after the above heat treatment step, the tensile strength of the carrier measured at room temperature is 300 MPa or more. 一種附載體銅箔之製造方法,其包含下述加熱處理步驟:對依序具備載體、中間層、極薄銅層、表面處理層的附載體銅箔,將到達加熱溫度為止的升溫速度設為超過50℃/小時,進行1小時~8小時之加熱溫度為100℃~220℃的加熱處理,或1小時~6小時之加熱溫度為100℃~220℃的加熱處理,或2小時~4小時之加熱溫度為160℃~220℃的加熱處理。 A method for producing a copper foil with a carrier, comprising a heat treatment step of providing a carrier copper foil having a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer in sequence, and setting a temperature increase rate up to a heating temperature More than 50 ° C / hour, 1 hour ~ 8 hours of heating temperature of 100 ° C ~ 220 ° C heat treatment, or 1 hour ~ 6 hours of heating temperature of 100 ° C ~ 220 ° C heat treatment, or 2 hours ~ 4 hours The heating temperature is 160 ° C to 220 ° C heat treatment. 如申請專利範圍第2項之附載體銅箔之製造方法,其中,上述加熱處理中之上述升溫速度為200℃/小時以下。 The method for producing a copper foil with a carrier according to the second aspect of the invention, wherein the temperature increase rate in the heat treatment is 200 ° C /hr or less. 如申請專利範圍第2項之附載體銅箔之製造方法,其中,上述加熱處理步驟後於常溫下所測得之載體的拉伸強度為300MPa以上。 The method for producing a copper foil with a carrier according to the second aspect of the invention, wherein the tensile strength of the carrier measured at room temperature after the heat treatment step is 300 MPa or more. 如申請專利範圍第3項之附載體銅箔之製造方法,其中,上述加熱處理步驟後於常溫下所測得之載體的拉伸強度為300MPa以上。 The method for producing a copper foil with a carrier according to the third aspect of the invention, wherein the tensile strength of the carrier measured at room temperature after the heat treatment step is 300 MPa or more. 如申請專利範圍第1至5項中任一項之附載體銅箔之製造方法,其中,於上述加熱處理步驟中,係於非活性氣體環境下進行加熱處理。 The method for producing a copper foil with a carrier according to any one of claims 1 to 5, wherein in the heat treatment step, heat treatment is performed in an inert gas atmosphere. 如申請專利範圍第1至5項中任一項之附載體銅箔之製造方法,其中,於上述加熱處理步驟中,於將附載體銅箔捲入至金屬製的中空管中的 狀態下進行加熱處理。 The method for producing a copper foil with a carrier according to any one of claims 1 to 5, wherein in the heat treatment step, the copper foil with a carrier is wound into a hollow tube made of metal. Heat treatment in the state. 如申請專利範圍第7項之附載體銅箔之製造方法,其中,於上述加熱處理步驟中,將把附載體銅箔捲入至金屬製的中空管中時的張力設為5~100kgf/m或20~100kgf/m從而進行加熱處理。 The method for producing a copper foil with a carrier according to the seventh aspect of the invention, wherein in the heat treatment step, the tension when the copper foil with a carrier is wound into a hollow tube made of metal is set to 5 to 100 kgf/ m or 20~100kgf/m for heat treatment. 如申請專利範圍第7項之附載體銅箔之製造方法,其中,於上述加熱處理步驟中,在將附載體銅箔捲入至金屬製的中空管中的狀態下,一邊以0.01~600旋轉/小時的速度旋轉上述中空管一邊進行加熱處理。 The method for producing a copper foil with a carrier according to the seventh aspect of the invention, wherein in the heat treatment step, the copper foil with a carrier is wound into a hollow tube made of metal, and 0.01 to 600 is used. The hollow tube was rotated at a rotation/hour speed while being subjected to heat treatment. 如申請專利範圍第8項之附載體銅箔之製造方法,其中,於上述加熱處理步驟中,在將附載體銅箔捲入至金屬製的中空管中的狀態下,一邊以0.01~600旋轉/小時的速度旋轉上述中空管一邊進行加熱處理。 The method for producing a copper foil with a carrier according to the eighth aspect of the invention, wherein in the heat treatment step, the copper foil with a carrier is wound into a hollow tube made of metal, and 0.01 to 600 is used. The hollow tube was rotated at a rotation/hour speed while being subjected to heat treatment. 如申請專利範圍第1至5項中任一項之附載體銅箔之製造方法,其中,上述加熱處理前之附載體銅箔進一步於上述載體側之表面依序具備中間層、極薄銅層。 The method for producing a copper foil with a carrier according to any one of claims 1 to 5, wherein the copper foil with a carrier before the heat treatment further has an intermediate layer and an extremely thin copper layer on the surface of the carrier side. . 如申請專利範圍第1至5項中任一項之附載體銅箔之製造方法,其中,上述加熱處理前之附載體銅箔進一步於上述載體側之表面具有表面處理層。 The method for producing a copper foil with a carrier according to any one of claims 1 to 5, wherein the copper foil with a carrier before the heat treatment further has a surface treatment layer on the surface of the carrier side. 如申請專利範圍第1至5項中任一項之附載體銅箔之製造方法,其中,上述表面處理層包含粗化處理層。 The method for producing a copper foil with a carrier according to any one of claims 1 to 5, wherein the surface treatment layer comprises a roughened layer. 如申請專利範圍第13項之附載體銅箔之製造方法,其中,於上述表面處理層為粗化處理層之表面進一步具有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所構成之群中之一種以上的層。 The method for producing a copper foil with a carrier according to claim 13 , wherein the surface of the surface treatment layer is further provided with a surface selected from the group consisting of a heat resistant layer, a rustproof layer, a chromate layer and a decane coupling treatment. One or more layers of the group formed by the layers. 如申請專利範圍第1至5項中任一項之附載體銅箔之製造方法,其 中,上述加熱處理前之附載體銅箔於上述極薄銅層之表面具有選自由粗化處理層、耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之一層以上的層來作為表面處理層。 A method for producing a copper foil with a carrier according to any one of claims 1 to 5, wherein The copper foil with a carrier before the heat treatment has a surface selected from the group consisting of a roughened layer, a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a decane coupling treatment layer on the surface of the ultra-thin copper layer. More than one layer is used as the surface treatment layer. 如申請專利範圍第1至5項中任一項之附載體銅箔之製造方法,其中,上述加熱處理前之附載體銅箔於上述表面處理層上具備樹脂層。 The method for producing a copper foil with a carrier according to any one of claims 1 to 5, wherein the copper foil with a carrier before the heat treatment has a resin layer on the surface treatment layer. 一種覆銅積層板之製造方法,其使用有藉由申請專利範圍第1至16項中任一項之附載體銅箔之製造方法所製得之附載體銅箔。 A copper-clad laminate produced by the method of producing a copper foil with a carrier according to any one of claims 1 to 16 of the invention. 一種印刷配線板之製造方法,其使用有藉由申請專利範圍第1至16項中任一項之附載體銅箔之製造方法所製得之附載體銅箔。 A method of producing a printed wiring board using the copper foil with a carrier obtained by the method for producing a copper foil with a carrier according to any one of claims 1 to 16. 一種印刷配線板之製造方法,其包含以下步驟:準備藉由申請專利範圍第1至16項中任一項之附載體銅箔之製造方法所製得之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;及於將上述附載體銅箔與絕緣基板積層後,經將上述附載體銅箔之載體剝離之步驟而形成覆銅積層板,其後,藉由半加成法、減成法、部分加成法或改良半加成法(Modified Semi Additive)中之任一方法形成電路。 A method of manufacturing a printed wiring board, comprising the steps of: preparing a copper foil with a carrier and an insulating substrate prepared by the method for producing a copper foil with a carrier according to any one of claims 1 to 16; a carrier copper foil and an insulating substrate are laminated; and after the carrier-attached copper foil and the insulating substrate are laminated, the copper-clad laminate is formed by peeling off the carrier of the carrier-attached copper foil, and then, by a half-addition A method of forming a circuit by any one of a method, a subtractive method, a partial addition method, or a modified semi-additive method (Modified Semi Additive). 一種印刷配線板之製造方法,其包含以下步驟:於藉由申請專利範圍第1至16項中任一項之附載體銅箔之製造方法所製得之附載體銅箔的上述極薄銅層側表面或上述載體側表面形成電路;以埋沒上述電路之方式於上述附載體銅箔之上述極薄銅層側表面或上述載體側表面形成樹脂層; 於上述樹脂層上形成電路;於上述樹脂層上形成電路後,剝離上述載體或上述極薄銅層;及於剝離上述載體後,去除上述極薄銅層或上述載體,藉此使形成於上述極薄銅層側表面或上述載體側表面之埋沒於上述樹脂層的電路露出。 A method of manufacturing a printed wiring board, comprising the step of: forming the ultra-thin copper layer of a copper foil with a carrier prepared by the method for producing a copper foil with a carrier according to any one of claims 1 to 16 Forming a circuit on the side surface or the side surface of the carrier; forming a resin layer on the side surface of the ultra-thin copper layer of the copper foil with a carrier or the side surface of the carrier in such a manner as to embed the above-mentioned circuit; Forming a circuit on the resin layer; after forming a circuit on the resin layer, peeling off the carrier or the ultra-thin copper layer; and after peeling off the carrier, removing the ultra-thin copper layer or the carrier, thereby forming the above An electric circuit buried in the resin layer is exposed on the side surface of the ultra-thin copper layer or the side surface of the carrier. 一種電子機器之製造方法,其使用有藉由申請專利範圍第18至20項中任一項之印刷配線板之製造方法所製得之印刷配線板。 A method of manufacturing an electronic device using the printed wiring board produced by the method for producing a printed wiring board according to any one of claims 18 to 20. 一種附載體銅箔,其係藉由申請專利範圍第1至16項中任一項之附載體銅箔之製造方法而製得。 A copper foil with a carrier produced by the method for producing a copper foil with a carrier according to any one of claims 1 to 16. 一種附載體銅箔,其依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%一過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑與最小直徑之差為10mm以下。 A copper foil with a carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer containing a decane coupling treatment layer, and is placed on the surface of the surface of the ultra-thin copper foil on the horizontal surface. Carrier copper foil (except for those having a resin layer), using a pipette to add 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the remainder being water) was placed in one portion, and left for 30 seconds. After the etching solution is wiped off, the difference between the maximum diameter and the minimum diameter of the trace of the etching liquid is 10 mm or less. 如申請專利範圍第23項之附載體銅箔,其依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑為25mm以上。 The copper foil with carrier of claim 23, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer, a surface treatment layer containing a decane coupling treatment layer, and a surface treatment layer having a very thin copper foil side on a horizontal surface. In the above manner, the carrier-attached copper foil (except for the resin layer) was placed, and 30 μL of a composition having 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the remainder being water) was added dropwise at one site using a pipette. After the etching solution was left for 30 seconds, the etching liquid was wiped off, and the maximum diameter of the trace of the etching liquid was 25 mm or more. 一種附載體銅箔,其依序具備載體、中間層、極薄銅層、包含矽烷偶合處理層之表面處理層,於水平面上以極薄銅箔側之表面處理層在上面 的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑為25mm以上。 A copper foil with carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer containing a decane coupling treatment layer, and a surface treatment layer on the surface of the ultra-thin copper foil on the horizontal surface To place the carrier-attached copper foil (except for the resin layer), and use a pipette to add 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid to 15% by weight of hydrogen peroxide (the remainder being water). After the etching liquid is wiped off after being left for 30 seconds, the maximum diameter of the trace of the etching liquid is 25 mm or more. 一種附載體銅箔,其依序具備載體、中間層、極薄銅層、表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑與最小直徑之差為10mm以下。 A carrier-attached copper foil, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer in this order, and is provided with a carrier copper foil on the surface of the surface of the ultra-thin copper foil side on the horizontal surface (except for having In addition to the resin layer, 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the remainder being water) was added dropwise at one portion using a pipette, and after leaving the etching solution for 30 seconds, the etching liquid was wiped off. The difference between the maximum diameter and the minimum diameter of the trace of the etching liquid is 10 mm or less. 如申請專利範圍第26項之附載體銅箔,其依序具備載體、中間層、極薄銅層、表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑為25mm以上。 The copper foil with carrier of claim 26, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer and a surface treatment layer, and is placed on the surface of the surface of the ultra-thin copper foil on the horizontal surface. With a carrier copper foil (except for those having a resin layer), 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the remainder being water) was added dropwise to one portion using a pipette, and left for 30 seconds. After the etching liquid is wiped off, the maximum diameter of the trace of the etching liquid is 25 mm or more. 一種附載體銅箔,其依序具備載體、中間層、極薄銅層、表面處理層,於水平面上以極薄銅箔側之表面處理層在上面的方式來放置附載體銅箔(除了具備樹脂層者以外),使用吸量管於一個部位滴加30μL具有硫酸24重量%-過氧化氫15重量%(剩餘部分為水)之組成的蝕刻液,放置30秒後擦掉蝕刻液後,蝕刻液之痕跡的最大直徑為25mm以上。 A carrier-attached copper foil, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer in this order, and is provided with a carrier copper foil on the surface of the surface of the ultra-thin copper foil side on the horizontal surface (except for having In addition to the resin layer, 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the remainder being water) was added dropwise at one portion using a pipette, and after leaving the etching solution for 30 seconds, the etching liquid was wiped off. The maximum diameter of the trace of the etching liquid is 25 mm or more. 如申請專利範圍第23至28項中任一項之附載體銅箔,其中,上述 蝕刻液之痕跡的最大直徑與最小直徑之差為5mm以下。 The carrier copper foil according to any one of claims 23 to 28, wherein The difference between the maximum diameter and the minimum diameter of the trace of the etching liquid is 5 mm or less. 如申請專利範圍第23至28項中任一項之附載體銅箔,其中,上述蝕刻液之痕跡的最大直徑為35mm以上。 The carrier-attached copper foil according to any one of claims 23 to 28, wherein the trace of the etching liquid has a maximum diameter of 35 mm or more. 如申請專利範圍第29項之附載體銅箔,其中,上述蝕刻液之痕跡的最大直徑為35mm以上。 The carrier copper foil according to claim 29, wherein the trace of the etching liquid has a maximum diameter of 35 mm or more. 一種積層體,其係使用申請專利範圍第22至31項中任一項之附載體銅箔而製得。 A laminate which is obtained by using the carrier copper foil of any one of claims 22 to 31. 一種積層體,其含有申請專利範圍第22至31項中任一項之附載體銅箔與樹脂,上述附載體銅箔之端面之一部分或全部被上述樹脂所覆蓋。 A laminated body comprising the copper foil with a carrier and a resin according to any one of claims 22 to 31, wherein one or all of the end faces of the copper foil with the carrier are covered with the resin. 一種積層體,其係將一個申請專利範圍第22至31項中任一項之附載體銅箔自上述載體側或上述表面處理層側積層於另一個申請專利範圍第22至31項中任一項之附載體銅箔的上述載體側或上述表面處理層側而成。 A laminated body in which a copper foil with a carrier of any one of claims 22 to 31 is laminated from the side of the carrier or the surface of the surface treatment layer to any of the 22nd to 31st patents of another patent application. The carrier side of the carrier copper foil is formed on the side of the carrier or the side of the surface treatment layer. 如申請專利範圍第34項之積層體,其中,上述一個附載體銅箔之上述載體側表面或上述表面處理層側表面與上述另一個附載體銅箔之上述載體側表面或上述表面處理層側表面視需要經由接著劑直接積層而被構成。 The laminate according to claim 34, wherein the carrier side surface of the one of the carrier-attached copper foils or the surface treatment layer side surface and the carrier side surface of the other carrier copper foil or the surface treatment layer side The surface is formed by directly laminating via an adhesive as needed. 如申請專利範圍第34項之積層體,其中,上述一個附載體銅箔之上述載體或上述表面處理層與上述另一個附載體銅箔之上述載體或上述表面處理層接合。 The laminate according to claim 34, wherein the carrier or the surface treatment layer of the one of the copper foils with a carrier is bonded to the carrier or the surface treatment layer of the other copper foil with a carrier. 如申請專利範圍第35項之積層體,其中,上述一個附載體銅箔之上述載體或上述表面處理層與上述另一個附載體銅箔之上述載體或上述表面處理層接合。 The laminate according to claim 35, wherein the carrier or the surface treatment layer of the one of the carrier-attached copper foil is bonded to the carrier or the surface treatment layer of the other copper foil with a carrier. 如申請專利範圍第32至37項中任一項之積層體,其中,上述積層 體之端面之一部分或全部被樹脂覆蓋。 The laminate of any one of claims 32 to 37, wherein the laminate One or all of the end faces of the body are covered with resin. 一種印刷配線板,其係使用申請專利範圍第22至31項中任一項之附載體銅箔製造而成者。 A printed wiring board manufactured by using the carrier-attached copper foil according to any one of claims 22 to 31. 一種電子機器,其係使用申請專利範圍第39項之印刷配線板製造而成者。 An electronic device manufactured by using a printed wiring board of the 39th patent application. 一種印刷配線板之製造方法,其包含以下步驟:準備申請專利範圍第22至31項中任一項之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;及於將上述附載體銅箔與絕緣基板積層後,經將上述附載體銅箔之載體剝離之步驟而形成覆銅積層板,其後,藉由半加成法、減成法、部分加成法或改良半加成法中之任一方法形成電路。 A method of manufacturing a printed wiring board, comprising the steps of: preparing a carrier copper foil and an insulating substrate according to any one of claims 22 to 31; laminating the copper foil with the carrier and the insulating substrate; After laminating the carrier copper foil and the insulating substrate, the copper-clad laminate is formed by the step of peeling off the carrier with the carrier copper foil, and thereafter, by semi-additive method, subtractive method, partial addition method or modified half Any of the methods of addition forms a circuit. 一種印刷配線板之製造方法,其包含以下步驟:於申請專利範圍第22至31項中任一項之附載體銅箔的上述極薄銅層側表面或上述載體側表面形成電路;以埋沒上述電路之方式於上述附載體銅箔之上述極薄銅層側表面或上述載體側表面形成樹脂層;於形成上述樹脂層後,剝離上述載體或上述極薄銅層;及於剝離上述載體或上述極薄銅層後,去除上述極薄銅層或上述載體,藉此使形成於上述極薄銅層側表面或上述載體側表面之埋沒於上述樹脂層的電路露出。 A manufacturing method of a printed wiring board, comprising the steps of: forming an electric circuit on the side surface of the ultra-thin copper layer or the side surface of the carrier side of the copper foil with a carrier of any one of claims 22 to 31; a method of forming a resin layer on the surface of the ultra-thin copper layer side of the copper foil with a carrier or the side surface of the carrier; after forming the resin layer, peeling off the carrier or the ultra-thin copper layer; and peeling off the carrier or the above After the ultra-thin copper layer is removed, the ultra-thin copper layer or the carrier is removed, whereby the circuit buried on the surface of the ultra-thin copper layer or the side surface of the carrier is exposed. 一種印刷配線板之製造方法,其包含以下步驟: 於申請專利範圍第22至31項中任一項之附載體銅箔的上述極薄銅層側表面或上述載體側表面形成電路;以埋沒上述電路之方式於上述附載體銅箔之上述極薄銅層側表面或上述載體側表面形成樹脂層;於上述樹脂層上形成電路;於上述樹脂層上形成電路後,剝離上述載體或上述極薄銅層;及於剝離上述載體或上述極薄銅層後,去除上述極薄銅層或上述載體,藉此使形成於上述極薄銅層側表面或上述載體側表面之埋沒於上述樹脂層的電路露出。 A method of manufacturing a printed wiring board, comprising the steps of: The above-mentioned ultra-thin copper layer side surface or the carrier-side surface of the carrier-attached copper foil according to any one of claims 22 to 31, wherein an electric circuit is formed on the above-mentioned carrier copper foil in such a manner as to embed the above-mentioned circuit; a copper layer side surface or the carrier side surface forming a resin layer; forming a circuit on the resin layer; after forming a circuit on the resin layer, peeling off the carrier or the ultra-thin copper layer; and peeling off the carrier or the ultra-thin copper After the layer, the ultra-thin copper layer or the carrier is removed, whereby the circuit buried on the surface of the ultra-thin copper layer or the side surface of the carrier is exposed to the resin layer. 一種印刷配線板之製造方法,其包含以下步驟:將申請專利範圍第22至31項中任一項之附載體銅箔的上述極薄銅層側表面或上述載體側表面與樹脂基板進行積層;在與上述附載體銅箔之積層有樹脂基板之側為相反側的上述極薄銅層側表面或上述載體側表面至少設置1次樹脂層和電路此兩層;及在形成上述樹脂層及電路此兩層後,從上述附載體銅箔剝離上述載體或上述極薄銅層。 A manufacturing method of a printed wiring board, comprising the steps of: laminating the ultra-thin copper layer side surface or the carrier side surface of the copper foil with a carrier of any one of claims 22 to 31 with a resin substrate; a resin layer and a circuit layer are provided at least once on the surface of the ultra-thin copper layer side opposite to the side on which the resin substrate is laminated with the carrier copper foil or the carrier side surface; and the resin layer and the circuit are formed After the two layers, the carrier or the ultra-thin copper layer is peeled off from the copper foil with a carrier. 一種印刷配線板之製造方法,其包含以下步驟:將申請專利範圍第22至31項中任一項之附載體銅箔的上述載體側表面與樹脂基板進行積層;在與上述附載體銅箔之積層有樹脂基板之側為相反側的極薄銅層側表面至少設置1次樹脂層和電路此兩層;及在形成上述樹脂層及電路此兩層後,從上述附載體銅箔剝離上述極薄 銅層。 A method of manufacturing a printed wiring board, comprising the steps of: laminating the carrier side surface of the copper foil with a carrier of any one of claims 22 to 31 with a resin substrate; The surface of the ultra-thin copper layer on the side opposite to the resin substrate is provided with at least one resin layer and two layers of the circuit; and after the two layers of the resin layer and the circuit are formed, the pole is peeled off from the copper foil with the carrier thin Copper layer.
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