TWI575313B - A photoresist composition, a photoresist pattern forming method, an acid diffusion controlling agent and a compound - Google Patents
A photoresist composition, a photoresist pattern forming method, an acid diffusion controlling agent and a compound Download PDFInfo
- Publication number
- TWI575313B TWI575313B TW102108443A TW102108443A TWI575313B TW I575313 B TWI575313 B TW I575313B TW 102108443 A TW102108443 A TW 102108443A TW 102108443 A TW102108443 A TW 102108443A TW I575313 B TWI575313 B TW I575313B
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- TW
- Taiwan
- Prior art keywords
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- carbon atoms
- nrso
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- compound
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D211/00—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings
- C07D211/04—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D211/06—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members
- C07D211/36—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D211/40—Oxygen atoms
- C07D211/44—Oxygen atoms attached in position 4
- C07D211/46—Oxygen atoms attached in position 4 having a hydrogen atom as the second substituent in position 4
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Hydrogenated Pyridines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012058033 | 2012-03-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201344353A TW201344353A (zh) | 2013-11-01 |
| TWI575313B true TWI575313B (zh) | 2017-03-21 |
Family
ID=49161066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102108443A TWI575313B (zh) | 2012-03-14 | 2013-03-11 | A photoresist composition, a photoresist pattern forming method, an acid diffusion controlling agent and a compound |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9557641B2 (fr) |
| JP (1) | JP6075369B2 (fr) |
| KR (1) | KR102075960B1 (fr) |
| TW (1) | TWI575313B (fr) |
| WO (1) | WO2013137157A1 (fr) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6222057B2 (ja) | 2014-11-25 | 2017-11-01 | 信越化学工業株式会社 | 化学増幅レジスト材料及びパターン形成方法 |
| US10324377B2 (en) * | 2015-06-15 | 2019-06-18 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
| JP6665528B2 (ja) * | 2015-12-25 | 2020-03-13 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、その形成方法、及び表示素子 |
| JP7042551B2 (ja) * | 2016-09-20 | 2022-03-28 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| KR102355757B1 (ko) | 2017-03-31 | 2022-01-26 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| JP6968196B2 (ja) * | 2017-11-28 | 2021-11-17 | 旭化成株式会社 | ネガ型感光性樹脂組成物及びその製造方法、並びに硬化レリーフパターンの製造方法 |
| WO2019167570A1 (fr) * | 2018-03-01 | 2019-09-06 | 富士フイルム株式会社 | Composition de résine sensible à la lumière actinique ou au rayonnement, film de réserve, procédé de formation de motif et procédé de fabrication d'un dispositif électronique |
| WO2019188595A1 (fr) | 2018-03-26 | 2019-10-03 | 富士フイルム株式会社 | Composition de résine photosensible, procédé de production associé, film de réserve, procédé de formation de motif et procédé de production d'un dispositif électronique |
| JPWO2020105505A1 (ja) | 2018-11-22 | 2021-10-21 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| KR102603920B1 (ko) | 2019-01-28 | 2023-11-20 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| WO2020158366A1 (fr) | 2019-01-28 | 2020-08-06 | 富士フイルム株式会社 | Composition de résine sensible aux rayons actiniques ou au rayonnement, film de réserve, procédé de formation de motif, et procédé de fabrication de dispositif électronique |
| CN113168098B (zh) | 2019-01-28 | 2024-03-29 | 富士胶片株式会社 | 感光化射线性或感辐射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法 |
| TWI836094B (zh) | 2019-06-21 | 2024-03-21 | 日商富士軟片股份有限公司 | 感光化射線性或感放射線性樹脂組合物、光阻膜、圖案形成方法、電子裝置之製造方法 |
| WO2020261784A1 (fr) | 2019-06-25 | 2020-12-30 | 富士フイルム株式会社 | Procédé de production d'une composition de résine sensible au rayonnement |
| WO2020261752A1 (fr) | 2019-06-28 | 2020-12-30 | 富士フイルム株式会社 | Procédé de production de composition de résine sensible à la lumière active ou au rayonnement actif, procédé de formation de motif et procédé de production de dispositif électronique |
| KR20220035184A (ko) | 2019-08-26 | 2022-03-21 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 레지스트막, 전자 디바이스의 제조 방법 |
| JP7357062B2 (ja) | 2019-08-28 | 2023-10-05 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、化合物、樹脂 |
| TW202128970A (zh) | 2019-08-29 | 2021-08-01 | 日商富士軟片股份有限公司 | 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法及電子裝置之製造方法 |
| EP4024131A4 (fr) | 2019-08-29 | 2022-12-14 | FUJIFILM Corporation | Composition de résine sensible aux rayons actiniques ou à un rayonnement, film sensible aux rayons actiniques ou à un rayonnement, procédé de formation de motif, et procédé de fabrication de dispositif électronique |
| JP7310471B2 (ja) * | 2019-09-12 | 2023-07-19 | Jsr株式会社 | パターン形成方法及び組成物 |
| WO2021060348A1 (fr) | 2019-09-26 | 2021-04-01 | 富士フイルム株式会社 | Procédé de production de couche thermoconductrice, procédé de production de stratifié, et procédé de production de dispositif semi-conducteur |
| KR20220053612A (ko) | 2019-09-30 | 2022-04-29 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| WO2021200056A1 (fr) | 2020-03-30 | 2021-10-07 | 富士フイルム株式会社 | Composition de résine sensible à la lumière active ou sensible au rayonnement, film sensible à la lumière active ou sensible au rayonnement, procédé de formation de motif, procédé de fabrication de dispositif électronique, composition de résine sensible à la lumière active ou sensible au rayonnement pour fabriquer un photo-masque, et procédé de fabrication de photo-masque |
| CN115349108A (zh) | 2020-03-31 | 2022-11-15 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法及电子器件的制造方法 |
| WO2021251083A1 (fr) | 2020-06-10 | 2021-12-16 | 富士フイルム株式会社 | Composition de résine sensible aux rayons actiniques ou sensible aux rayonnements, film de réserve, procédé de formation de motifs et procédé de fabrication de dispositifs électroniques |
| JP7545473B2 (ja) | 2020-06-10 | 2024-09-04 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、化合物 |
| WO2022158323A1 (fr) | 2021-01-22 | 2022-07-28 | 富士フイルム株式会社 | Procédé de formation de motif et procédé de production de dispositif électronique |
| WO2022172597A1 (fr) | 2021-02-09 | 2022-08-18 | 富士フイルム株式会社 | Composition de résine sensible aux rayons actifs ou sensible aux rayonnements, film de réserve, procédé de formation de motif de type positif et procédé de fabrication de dispositif électronique |
| KR20230131900A (ko) | 2021-02-12 | 2023-09-14 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막,패턴 형성 방법, 전자 디바이스의 제조 방법 |
| CN116848460A (zh) | 2021-02-15 | 2023-10-03 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法 |
| EP4317217A4 (fr) | 2021-03-29 | 2024-11-06 | Fujifilm Corp | Composition de résine sensible à une lumière active ou sensible à un rayonnement, film de réserve, procédé permettant de former un motif, et procédé permettant de produire un dispositif électronique |
| JPWO2022220201A1 (fr) | 2021-04-16 | 2022-10-20 | ||
| WO2023286763A1 (fr) | 2021-07-14 | 2023-01-19 | 富士フイルム株式会社 | Composition de résine sensible à la lumière active ou sensible au rayonnement, film de réserve, procédé de formation de motif et procédé de production de dispositif électronique |
| WO2023286736A1 (fr) | 2021-07-14 | 2023-01-19 | 富士フイルム株式会社 | Procédé de formation de motif et procédé de production de dispositif électronique |
| WO2023286764A1 (fr) | 2021-07-14 | 2023-01-19 | 富士フイルム株式会社 | Procédé de formation de motif, procédé de fabrication de dispositif électronique, composition de résine sensible aux rayons actiniques ou sensible au rayonnement, et film de réserve |
| JPWO2023026969A1 (fr) | 2021-08-25 | 2023-03-02 | ||
| IL311594A (en) | 2021-09-29 | 2024-05-01 | Fujifilm Corp | A resin composition sensitive to radiation or an actinic beam and a method for producing a durable sample |
| KR20240096807A (ko) | 2021-12-10 | 2024-06-26 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법 |
| EP4455787A1 (fr) | 2021-12-23 | 2024-10-30 | FUJIFILM Corporation | Composition de résine sensible aux rayons actiniques ou sensible au rayonnement, film sensible aux rayons actiniques ou au rayonnement, procédé de formation de motif, procédé de fabrication de dispositif électronique et composé |
| WO2023157635A1 (fr) | 2022-02-16 | 2023-08-24 | 富士フイルム株式会社 | Composition de résine sensible aux rayons actiniques ou sensible au rayonnement, film sensible aux rayons actiniques ou au rayonnement, procédé de formation de motif, procédé de production de dispositif électronique et composé |
| KR20240135851A (ko) | 2022-02-25 | 2024-09-12 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
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| JP2011048175A (ja) * | 2009-08-27 | 2011-03-10 | Jsr Corp | 感放射線性樹脂組成物 |
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| JP5609815B2 (ja) * | 2010-08-26 | 2014-10-22 | 信越化学工業株式会社 | ポジ型化学増幅レジスト材料及びパターン形成方法 |
| JP5440515B2 (ja) * | 2011-01-14 | 2014-03-12 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP5618958B2 (ja) * | 2011-09-22 | 2014-11-05 | 富士フイルム株式会社 | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス |
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2013
- 2013-03-08 JP JP2014504844A patent/JP6075369B2/ja active Active
- 2013-03-08 WO PCT/JP2013/056543 patent/WO2013137157A1/fr active Application Filing
- 2013-03-08 KR KR1020147025087A patent/KR102075960B1/ko active IP Right Grant
- 2013-03-11 TW TW102108443A patent/TWI575313B/zh active
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2014
- 2014-09-15 US US14/486,532 patent/US9557641B2/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2011048175A (ja) * | 2009-08-27 | 2011-03-10 | Jsr Corp | 感放射線性樹脂組成物 |
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|---|---|
| US9557641B2 (en) | 2017-01-31 |
| JP6075369B2 (ja) | 2017-02-08 |
| KR102075960B1 (ko) | 2020-02-11 |
| TW201344353A (zh) | 2013-11-01 |
| US20150004544A1 (en) | 2015-01-01 |
| JPWO2013137157A1 (ja) | 2015-08-03 |
| US20150309406A9 (en) | 2015-10-29 |
| WO2013137157A1 (fr) | 2013-09-19 |
| KR20140135972A (ko) | 2014-11-27 |
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