TWI573180B - 微腔室雷射加工系統及使用局域化加工氣體氣氛之方法 - Google Patents

微腔室雷射加工系統及使用局域化加工氣體氣氛之方法 Download PDF

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Publication number
TWI573180B
TWI573180B TW105117738A TW105117738A TWI573180B TW I573180 B TWI573180 B TW I573180B TW 105117738 A TW105117738 A TW 105117738A TW 105117738 A TW105117738 A TW 105117738A TW I573180 B TWI573180 B TW I573180B
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Taiwan
Prior art keywords
gas
chamber
curtain
substrate
vacuum
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TW105117738A
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English (en)
Chinese (zh)
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TW201643944A (zh
Inventor
詹姆士 馬克懷特
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精微超科技公司
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Laser Beam Processing (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
TW105117738A 2015-06-08 2016-06-04 微腔室雷射加工系統及使用局域化加工氣體氣氛之方法 TWI573180B (zh)

Applications Claiming Priority (1)

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US201562172701P 2015-06-08 2015-06-08

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TW201643944A TW201643944A (zh) 2016-12-16
TWI573180B true TWI573180B (zh) 2017-03-01

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TW105117738A TWI573180B (zh) 2015-06-08 2016-06-04 微腔室雷射加工系統及使用局域化加工氣體氣氛之方法

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JP (1) JP2017005251A (ja)
KR (1) KR20160144307A (ja)
CN (1) CN106252257A (ja)
SG (1) SG10201604390VA (ja)
TW (1) TWI573180B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107419239A (zh) 2017-07-28 2017-12-01 京东方科技集团股份有限公司 用于镀膜的喷头、设备和相应方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818857B1 (en) * 2000-11-28 2004-11-16 Heung Ki Cho Method and apparatus for welding
US6899764B2 (en) * 1999-12-22 2005-05-31 Aixtron Ag Chemical vapor deposition reactor and process chamber for said reactor
US7375791B2 (en) * 2005-06-30 2008-05-20 Asml Holding N.V. Laminar flow gas curtains for lithographic applications
US7807947B2 (en) * 2005-05-09 2010-10-05 3D Systems, Inc. Laser sintering process chamber gas curtain window cleansing in a laser sintering system
US20110303148A1 (en) * 2010-06-09 2011-12-15 Jun Xie Full-enclosure, controlled-flow mini-environment for thin film chambers

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US4801352A (en) * 1986-12-30 1989-01-31 Image Micro Systems, Inc. Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation
JPH05218006A (ja) * 1992-02-06 1993-08-27 Oki Electric Ind Co Ltd 絶縁膜形成方法
JP2001244259A (ja) * 2000-02-29 2001-09-07 Seiko Epson Corp 絶縁体薄膜を製造する方法
JP3859543B2 (ja) * 2002-05-22 2006-12-20 レーザーフロントテクノロジーズ株式会社 レーザ加工装置
JP2005171272A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザｃｖｄ装置
EP1598140A1 (de) * 2004-05-19 2005-11-23 Synova S.A. Laserbearbeitung eines Werkstücks
JP5492571B2 (ja) * 2007-02-20 2014-05-14 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Ｍｅｍｓのエッチングを行うための機器および方法
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
JP6022785B2 (ja) * 2012-03-26 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、及びプログラム
JP2014053136A (ja) * 2012-09-06 2014-03-20 Mitsubishi Electric Corp 大気圧プラズマ処理装置
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
US8986562B2 (en) * 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6899764B2 (en) * 1999-12-22 2005-05-31 Aixtron Ag Chemical vapor deposition reactor and process chamber for said reactor
US6818857B1 (en) * 2000-11-28 2004-11-16 Heung Ki Cho Method and apparatus for welding
US7807947B2 (en) * 2005-05-09 2010-10-05 3D Systems, Inc. Laser sintering process chamber gas curtain window cleansing in a laser sintering system
US7375791B2 (en) * 2005-06-30 2008-05-20 Asml Holding N.V. Laminar flow gas curtains for lithographic applications
US20110303148A1 (en) * 2010-06-09 2011-12-15 Jun Xie Full-enclosure, controlled-flow mini-environment for thin film chambers

Also Published As

Publication number Publication date
JP2017005251A (ja) 2017-01-05
SG10201604390VA (en) 2017-01-27
KR20160144307A (ko) 2016-12-16
CN106252257A (zh) 2016-12-21
TW201643944A (zh) 2016-12-16

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