TWI571346B - Laser cutting sheet - Stripping sheet laminate, laser cutting sheet and wafer manufacturing method - Google Patents

Laser cutting sheet - Stripping sheet laminate, laser cutting sheet and wafer manufacturing method Download PDF

Info

Publication number
TWI571346B
TWI571346B TW102134037A TW102134037A TWI571346B TW I571346 B TWI571346 B TW I571346B TW 102134037 A TW102134037 A TW 102134037A TW 102134037 A TW102134037 A TW 102134037A TW I571346 B TWI571346 B TW I571346B
Authority
TW
Taiwan
Prior art keywords
sheet
laser
peeling
region
laminate
Prior art date
Application number
TW102134037A
Other languages
English (en)
Chinese (zh)
Other versions
TW201424908A (zh
Inventor
Yosuke Sato
Akinori Sato
Tomoharu Miyanaga
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2012206769A external-priority patent/JP5583724B2/ja
Priority claimed from JP2012206770A external-priority patent/JP5583725B2/ja
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of TW201424908A publication Critical patent/TW201424908A/zh
Application granted granted Critical
Publication of TWI571346B publication Critical patent/TWI571346B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
TW102134037A 2012-09-20 2013-09-23 Laser cutting sheet - Stripping sheet laminate, laser cutting sheet and wafer manufacturing method TWI571346B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012206769A JP5583724B2 (ja) 2012-09-20 2012-09-20 レーザーダイシングシート−剥離シート積層体、レーザーダイシングシートおよびチップ体の製造方法
JP2012206770A JP5583725B2 (ja) 2012-09-20 2012-09-20 レーザーダイシングシート−剥離シート積層体、レーザーダイシングシートおよびチップ体の製造方法

Publications (2)

Publication Number Publication Date
TW201424908A TW201424908A (zh) 2014-07-01
TWI571346B true TWI571346B (zh) 2017-02-21

Family

ID=50341431

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102134037A TWI571346B (zh) 2012-09-20 2013-09-23 Laser cutting sheet - Stripping sheet laminate, laser cutting sheet and wafer manufacturing method

Country Status (2)

Country Link
TW (1) TWI571346B (fr)
WO (1) WO2014046121A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102355108B1 (ko) * 2014-06-10 2022-01-24 린텍 가부시키가이샤 다이싱 시트
CN107112256A (zh) * 2014-12-29 2017-08-29 卡尔·海因茨·普利瓦西尔 在处理半导体尺寸晶片中使用的保护片及半导体尺寸晶片处理方法
CN108541338A (zh) * 2016-03-02 2018-09-14 古河电气工业株式会社 晶片加工用带
WO2017149926A1 (fr) * 2016-03-04 2017-09-08 リンテック株式会社 Feuille de traitement de semi-conducteur
WO2017149925A1 (fr) * 2016-03-04 2017-09-08 リンテック株式会社 Feuille de traitement de semi-conducteur
WO2017206795A1 (fr) * 2016-05-30 2017-12-07 苏州晶方半导体科技股份有限公司 Structure d'encapsulation et procédé d'encapsulation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123404A (ja) * 2005-10-26 2007-05-17 Furukawa Electric Co Ltd:The ダイシングテープ、および半導体ウェハダイシング方法
JP2009239298A (ja) * 2009-06-11 2009-10-15 Nitto Denko Corp ロール状ウエハ加工用粘着シート
JP2011243613A (ja) * 2010-05-14 2011-12-01 Mitsui Chemicals Inc 半導体ウェハ保護用粘着フィルム及び半導体ウェハ保護用粘着フィルムロール
JP2012015236A (ja) * 2010-06-30 2012-01-19 Furukawa Electric Co Ltd:The ウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123404A (ja) * 2005-10-26 2007-05-17 Furukawa Electric Co Ltd:The ダイシングテープ、および半導体ウェハダイシング方法
JP2009239298A (ja) * 2009-06-11 2009-10-15 Nitto Denko Corp ロール状ウエハ加工用粘着シート
JP2011243613A (ja) * 2010-05-14 2011-12-01 Mitsui Chemicals Inc 半導体ウェハ保護用粘着フィルム及び半導体ウェハ保護用粘着フィルムロール
JP2012015236A (ja) * 2010-06-30 2012-01-19 Furukawa Electric Co Ltd:The ウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法

Also Published As

Publication number Publication date
TW201424908A (zh) 2014-07-01
WO2014046121A1 (fr) 2014-03-27

Similar Documents

Publication Publication Date Title
TWI571346B (zh) Laser cutting sheet - Stripping sheet laminate, laser cutting sheet and wafer manufacturing method
JP5583725B2 (ja) レーザーダイシングシート−剥離シート積層体、レーザーダイシングシートおよびチップ体の製造方法
JP5583724B2 (ja) レーザーダイシングシート−剥離シート積層体、レーザーダイシングシートおよびチップ体の製造方法
JP4970863B2 (ja) 被加工物の加工方法
KR102544301B1 (ko) 수지막 형성용 시트 적층체
JP6018730B2 (ja) ダイシングシートおよび半導体チップの製造方法
TWI811763B (zh) 黏接片以及加工物之製造方法
TWI741335B (zh) 切割片
TWI657550B (zh) 可延伸片材以及積層晶片之製造方法
JP2007220694A (ja) ダイシング用粘着シート及びそれを用いた被加工物の加工方法
TWI568825B (zh) A backing substrate for a polishing film and a sheet for bonding, a method for manufacturing the substrate and the sheet, and a method of manufacturing the workpiece
US11437243B2 (en) Mask material for plasma dicing, mask-integrated surface protective tape and method of producing semiconductor chip
JP2003261842A (ja) 半導体ウエハ加工用粘着シートおよびその使用方法
TW201114875A (en) Surface protective sheet
CN107236473B (zh) 玻璃切割用粘着片材及其制造方法
TW201729276A (zh) 遮罩一體型表面保護帶
JP2009016538A (ja) ウエハ表面保護テープおよびウエハ研削方法
JP2007250790A (ja) 半導体チップの製造方法
TWI747985B (zh) 切割片
JP7402052B2 (ja) 長尺積層シートおよびその巻収体
CN107236474B (zh) 玻璃切割用粘着片材及其制造方法
JP2019033214A (ja) 半導体デバイスの製造方法
TWI791424B (zh) 玻璃切割用黏著板片及其製造方法
TW202239036A (zh) 工件處理片及裝置製造方法
TW202237771A (zh) 半導體加工用黏著帶及半導體裝置的製造方法