TWI566434B - 發光二極體及其製造方法 - Google Patents
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- 230000000903 blocking effect Effects 0.000 claims description 17
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 16
- 230000007547 defect Effects 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
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- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
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Description
本發明涉及一種發光元件,特別涉及一種發光二極體及其製造方法。
發光二極體因具有生產成本低、結構簡單、低能耗低污染、體積小及容易安裝等優勢被大量用於照明光源及顯示技術中。
習知的發光二極體包括藍寶石基板、以及依次成長在藍寶石基板上的N型半導體層、發光活性層和P型半導體層,以及設置在P型半導體層和N型半導體層上的P電極和N電極。在發光二極體的製造過程中,通常先在藍寶石基板上形成多個實心的球狀凸起,然後再基板上依次形成其他結構。然而,此種凸起的形成往往導致其頂端應力集中,如此導致晶格缺陷的形成,並且這些缺陷將延伸到藍寶石基板上的其他結構,從而使整個發光二極體存在較大的晶格缺陷。
有鑑於此,有必要提供一種品質優良且出光效率高的發光二極體及其製造方法。
一種發光二極體,包括基板和成長在基板上的半導體結構,所述基板包括基體,所述的基體包括相對設置的第一表面和第二表面
,所述基體的第一表面上形成有底端完全遮蓋基體第一表面的微結構,所述微結構為連續彎折的金屬片體、多個相連接的阻擋結構,每一阻擋結構的頂端具有平板狀的頂壁。
一種發光二極體的製造方法,包括如下步驟:提供一基體,所述基體包括相對的第一表面和第二表面,使用黃光微影技術或者濺射法在基體的上表面形成多個凸起的光致抗阻劑;使用原子沉積機台在光致抗阻劑及基體的第一表面上鍍一層氮化鋁(AlN);加熱氮化鋁(AlN),使氮化鋁(AlN)結晶;第二次加熱氮化鋁(AlN),將光致抗阻劑從氮化鋁(AlN)內脫離,進而形成內部為空心腔體的微結構;在微結構的外表面形成緩衝層,從而得到磊晶基板;在磊晶基板上依次成長半導體結構。
在本發明所述的發光二極體,微結構有效的降低了基體與和緩衝層以及半導體結構之間因應力而產生的晶格缺陷,使得發光二極體品質優良。自發光活性層出射的光線經過N型半導體層、緩衝層到達基板時,因緩衝層、微結構以及空腔的折射率依次減小,使得到達微結構上的大部光線被全反射後朝向遠離基板的方向散射出去,從而有效的阻止了光線自基板的下表面方向出射,提高了發光二極體的出光效率。
100‧‧‧基板
200‧‧‧半導體結構
10‧‧‧基體
101‧‧‧第一表面
102‧‧‧第二表面
11‧‧‧微結構
110‧‧‧阻擋結構
12‧‧‧凸起
13‧‧‧氮化鋁(AlN)層
111‧‧‧頂壁
112‧‧‧側壁
120‧‧‧連接部
130‧‧‧凹槽
20‧‧‧緩衝層
30‧‧‧N型半導體層
40‧‧‧發光活性層
50‧‧‧P型半導體層
31‧‧‧N電極
51‧‧‧P電極
圖1係本發明發光二極體的剖視圖。
圖2係本發明發光二極體磊晶基板剖視圖。
圖3-8係本發明發光二極體製造流程圖。
圖9係圖3中所述基板的俯視圖。
圖10係另一實施例中基板的俯視圖。
如圖1所示本發明所述發光二極體結構,包括基板100和成長在在基板100上的半導體結構200。
所述基板100包括基體10以及設置在基體10上的緩衝層20。
請同時參考圖2,所述基體10可採用藍寶石、含矽材料以及氮化鎵材料中的一種,優選的,本發明採用藍寶石作為基體10的材料,以利用藍寶石材料的機械強度高,易於加工處理的特點。所述基體10包括相對的第一表面101和第二表面102,所述第一表面101上形成有微結構11。
微結構11由厚度均勻的金屬片體連續彎折形成,其包括多個阻擋結構110和連接多個阻擋結構的連接部120。每一阻擋結構110包括一水準的頂壁111和自水平頂壁111相對兩側向下、向外傾斜延伸的兩側壁112。所述阻擋結構110的尺寸自所述第一表面101朝向遠離第一表面101的方向逐漸減小。相鄰二阻擋結構110的二側壁112的底端與連接部120的相對兩端連接,相互連接的側壁112及連接部120圍成一凹槽130。每一頂壁111為一水準的板體。
在本實施例中,所述微結構11由氮化鋁(AlN)材料支撐。這些
阻擋結構110的頂端的頂壁111平行共面及底端的連接部120分別共面,且每一阻擋結構110的厚度在80nm-180nm之間,優選的,每一阻擋結構110的厚度為120nm。所述微結構11完全遮蓋第一表面101,從而使形成半導體結構200側向生長,並且其頂端的頂壁111為平行共面的板體,減小了頂端的應力,阻止了晶種生長過程中形成缺陷並延伸至半導體結構,從而提高磊晶的品質。
更進一步的,阻擋結構110用於將照射至其上的光線進行反射,以提高出光效率。
所述緩衝層20填充於所述凹槽130中且覆蓋所述微結構11。所述緩衝層20材料為不摻雜的氮化鎵(GaN),主要用於降低N型半導體層30的晶格缺陷。所述緩衝層20的折射率大於所述微結構11的折射率。
所述的半導體結構200包括依次自下而上形成在磊晶基板100上的N型半導體層30、發光活性層40以及P型半導體層50。可以理解的,在本發明所述發光二極體的磊晶結構中,為了提高電流傳輸效率,可在P型半導體層50上設置歐姆接觸層。
所述P型半導體層50和N型半導體層30上分別設置有P電極51和N電極31。所述N電極31的形成過程包括先蝕刻部分發光活性層40和P型半導體層50以露出部分N型半導體層30,再將所述N電極31設置在露出的N型半導體層的表面上。
P型半導體層50提供電洞,主要為P型氮化鎵(GaN)材料,N型半導體層30提供電子,主要為摻雜的氮化鎵(GaN)材料,如AlGaN。發光活性層40產生光,其材質為氮化鎵基材料,如InGaN、GaN等
,還使電子及電洞局限在一起,增加發光強度。
本發明所述的發光二極體,微結構11可使晶種側向生長,進而阻止了晶種生長過程中形成缺陷並使缺陷自基體10向上延伸至緩衝層20和半導體結構200,有效的降低了基體10與和緩衝層20以及半導體結構200之間因應力而產生的晶格缺陷密度,使得發光二極體品質優良。自發光活性層40出射的光線經過N型半導體層30、緩衝層20到達基板100時,因緩衝層20、微結構11的折射率依次減小,使得到達微結構11上的大部光線被全反射後朝向遠離基板100的方向散射出去,從而有效的阻止了光線自基板100的第二表面102方向出射,提高了發光二極體的出光效率。
一種上述所述發光二極體的製造方法,包括如下步驟:
步驟一:如圖3,提供所述基體10,使用黃光微影技術或者濺射法在基體10的上表面形成多個凸起12,所述凸起12的材料為光致抗阻劑材料。
步驟二:如圖4,使用原子沉積機台在凸起12及第一表面101上形成一厚度均勻的氮化鋁(AlN)層13。在本發明中,所述氮化鋁(AlN)層13的厚度在80nm-180nm之間,優選的,氮化鋁(AlN)層13的厚度為120nm。
步驟三:如圖5,加熱氮化鋁(AlN)層13,使氮化鋁(AlN)層13結晶。在本發明中所述加熱氮化鋁(AlN)層13結晶的溫度為700-950℃,加熱時間為70-100分鐘,優選的,加熱氮化鋁(AlN)層13結晶的溫度為800℃,加熱時間為90分鐘。
步驟四:如圖6,第二次加熱氮化鋁(AlN)層13,將為光致抗阻
劑材料的凸起12從氮化鋁(AlN)層13內脫離出,進而形成內部為空腔的阻擋結構110,多個阻擋結構110之間具有連接部120,進而組成微結構11。在本發明中,所述第二次加熱溫度為1000-1250℃,加熱時間為7-11小時,優選的,所述二次加熱溫度為1150℃,加熱時間為9小時。
步驟五:如圖7,在微結構11的外表面成長緩衝層20,從而得到磊晶基板100。所述緩衝層20可採用有機金屬化學氣相沉積法、射頻磁控濺鍍法、化學氣相沉積法、物理氣相沉積法、原子層沉積法、分子束沉積法方法中的任何一種形成。
步驟六:如圖8,在磊晶基板100上依次成長半導體結構200。成長半導體結構200同樣可採用有機金屬化學氣相沉積法、射頻磁控濺鍍法、化學氣相沉積法、物理氣相沉積法、原子層沉積法、分子束沉積法方法中的任何一種形成。
如圖9所示,為上述所述發光二極體磊晶的製造方法步驟1中,形成的凸起12為非連續的間隔的點狀分佈。
如圖10所示,為本發明另一實施例發光二極體磊晶的製造方法,其與第一實施例相似,其不同之處在於:步驟1中形成所述凸起12為連續條狀分佈。
100‧‧‧基板
200‧‧‧半導體結構
10‧‧‧基體
11‧‧‧微結構
20‧‧‧緩衝層
30‧‧‧N型半導體層
40‧‧‧發光活性層
50‧‧‧P型半導體層
31‧‧‧N電極
51‧‧‧P電極
Claims (14)
- 一種發光二極體,包括基板和成長在基板上的半導體結構,所述基板包括基體,所述的基體包括相對設置的第一表面和第二表面,其改良在於:所述基體的第一表面上形成有底端完全遮蓋基體第一表面的微結構,所述微結構為連續彎折的金屬片體、多個相連接的阻擋結構,每一阻擋結構的頂端具有平板狀的頂壁,所述微結構為氮化鋁材料,其厚度在120nm-180nm之間。
- 如申請專利範圍第1項所述發光二極體,其中:所述阻擋結構的頂壁平行共面。
- 如申請專利範圍第1項所述發光二極體,其中:所述阻擋結構的尺寸自基體第一表面朝向遠離第一表面的方向逐漸減小。
- 如申請專利範圍第2項所述發光二極體,其中:所述每一阻擋結構包括一水準的頂壁和自水平頂壁相對兩側傾斜延伸的兩側壁。
- 如申請專利範圍第2項所述發光二極體,其中:所述每相鄰二阻擋結構之間還包括有連接部,相鄰的兩阻擋結構的兩側壁的底端與連接部的相對兩端連接。
- 如申請專利範圍第5項所述發光二極體,其中:所述每兩阻擋結構的兩側壁及連接部圍城一凹槽。
- 如申請專利範圍第6項所述發光二極體,其中:還包括一緩衝層,所述的緩衝層填充於凹槽中且覆蓋所述微結構。
- 如申請專利範圍第1項所述發光二極體,其中:所述半導體結構包括自下而上依次形成在基板上的N型半導體層、發光活性層、P型半導體層,所述P型半導體層和N型半導體層上分別設置有P電極和N電極。
- 一種發光二極體的製造方法,包括如下步驟:提供所述基體,使用黃光微影技術或者濺射法在基體的上表面形成多個凸起;使用原子沉積機台在凸起及基體的第一表面上形成一氮化鋁層;加熱氮化鋁層,使氮化鋁層結晶;第二次加熱氮化鋁層,將凸起從氮化鋁層內部脫離,進而形成內部為空心腔體的阻擋結構及位於阻擋結構之間的連接部,阻擋結構和連接部共同組成微結構;在微結構的外表面形成緩衝層,從而得到磊晶基板;在磊晶基板上依次成長半導體結構。
- 如申請專利範圍第9項所述的發光二極體的製造方法,其中:所述氮化鋁層的厚度均勻,其厚度在80nm-180nm之間。
- 如申請專利範圍第9項所述的發光二極體的製造方法,其中:加熱氮化鋁使其結晶的溫度為700-950℃,加熱時間為70-100分鐘。
- 如申請專利範圍第9項所述的發光二極體的製造方法,其中:第二次加熱溫度為1000-1250℃,加熱時間為7-11小時。
- 如申請專利範圍第9項所述的發光二極體的製造方法,其中:所述凸起的材料為光致抗阻劑,所述凸起呈間隔的非連續的點狀分佈。
- 如申請專利範圍第9項所述的發光二極體的製造方法,其中:所述凸起的材料為光致抗阻劑,所述凸起呈連續的條形分佈。
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