TWI563851B - Dual conversion gain high dynamic range sensor - Google Patents

Dual conversion gain high dynamic range sensor

Info

Publication number
TWI563851B
TWI563851B TW104100797A TW104100797A TWI563851B TW I563851 B TWI563851 B TW I563851B TW 104100797 A TW104100797 A TW 104100797A TW 104100797 A TW104100797 A TW 104100797A TW I563851 B TWI563851 B TW I563851B
Authority
TW
Taiwan
Prior art keywords
dynamic range
range sensor
high dynamic
conversion gain
dual conversion
Prior art date
Application number
TW104100797A
Other languages
English (en)
Other versions
TW201532440A (zh
Inventor
Johannes Solhusvik
Robert Johansson
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Publication of TW201532440A publication Critical patent/TW201532440A/zh
Application granted granted Critical
Publication of TWI563851B publication Critical patent/TWI563851B/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW104100797A 2014-01-10 2015-01-09 Dual conversion gain high dynamic range sensor TWI563851B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461926124P 2014-01-10 2014-01-10
US14/554,787 US9402039B2 (en) 2014-01-10 2014-11-26 Dual conversion gain high dynamic range sensor

Publications (2)

Publication Number Publication Date
TW201532440A TW201532440A (zh) 2015-08-16
TWI563851B true TWI563851B (en) 2016-12-21

Family

ID=53522455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104100797A TWI563851B (en) 2014-01-10 2015-01-09 Dual conversion gain high dynamic range sensor

Country Status (4)

Country Link
US (1) US9402039B2 (zh)
CN (1) CN104780326B (zh)
HK (1) HK1207779A1 (zh)
TW (1) TWI563851B (zh)

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US10257448B1 (en) * 2015-08-18 2019-04-09 Sri International Extended dynamic range imaging sensor and operating mode of the same
US9948875B2 (en) * 2015-10-01 2018-04-17 Semiconductor Components Industries, Llc High dynamic range imaging pixels with improved readout
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JP6937736B2 (ja) * 2016-02-15 2021-09-22 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置および撮像装置
DE102016212784A1 (de) * 2016-07-13 2018-01-18 Robert Bosch Gmbh CMOS Pixel, Bildsensor und Kamera sowie Verfahren zum Auslesen eienes CMOS Pixels
US10218924B2 (en) * 2017-04-12 2019-02-26 Omnivision Technologies, Inc. Low noise CMOS image sensor by stack architecture
JP7018294B2 (ja) * 2017-11-10 2022-02-10 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
CN109951655B (zh) * 2017-12-21 2022-02-25 格科微电子（上海）有限公司 双转换增益图像传感器的实现方法
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US10432879B2 (en) * 2018-01-16 2019-10-01 Omnivision Technologies, Inc. Dual conversion gain high dynamic range image sensor readout circuit memory storage structure
CN110389328B (zh) * 2018-04-16 2021-04-23 宁波飞芯电子科技有限公司 基于动态门限电压的像素单元与光电调制方法及其应用
CN109559574A (zh) * 2018-12-08 2019-04-02 大连范特西西科技有限公司 一种基于近场通信技术的英文学习系统
CN111385499B (zh) * 2018-12-27 2023-05-12 格科微电子（上海）有限公司 双转换增益图像传感器的实现方法
US10771725B1 (en) * 2019-07-03 2020-09-08 Himax Imaging Limited Pixel circuit
US11165977B2 (en) * 2019-07-22 2021-11-02 Semiconductor Components Industries, Llc Imaging systems and methods for generating high dynamic range images
CN112399090B (zh) * 2019-08-14 2022-04-15 原相科技股份有限公司 具有两种曝光模式的摄像机及使用该摄像机的摄像系统
US11451717B2 (en) * 2019-11-05 2022-09-20 Omnivision Technologies, Inc. Multi-cell pixel array for high dynamic range image sensors
KR20220101694A (ko) * 2019-11-20 2022-07-19 기가조트 테크널러지 인코포레이티드 스케일러블 픽셀 크기 이미지센서
US11348956B2 (en) * 2019-12-17 2022-05-31 Omnivision Technologies, Inc. Multi-gate lateral overflow integration capacitor sensor
KR20210102517A (ko) * 2020-02-10 2021-08-20 삼성전자주식회사 듀얼 컨버전 게인을 이용하여 hdr 이미지를 구현하기 위한 이미지 센서
KR20210109769A (ko) 2020-02-28 2021-09-07 삼성전자주식회사 이미지 센서, 이를 포함하는 이미지 처리 시스템 및 이의 구동 방법
US11527569B2 (en) * 2020-05-18 2022-12-13 Omnivision Technologies, Inc. High dynamic range split pixel CMOS image sensor with low color crosstalk
US11212457B2 (en) * 2020-05-28 2021-12-28 Omnivision Technologies, Inc. High dynamic range CMOS image sensor design
US11223779B2 (en) 2020-06-12 2022-01-11 Novatek Microelectronics Corp. Image sensing device and operating method thereof
CN111741244B (zh) * 2020-08-05 2022-06-24 锐芯微电子股份有限公司 图像传感器像素结构
US11343450B1 (en) * 2021-05-05 2022-05-24 Omnivision Technologies, Inc. Dark current/white pixel devices and methods for lateral overflow image sensors
US11463648B1 (en) * 2021-06-08 2022-10-04 Omnivision Technologies, Inc. Image sensor with three readout approach for phase detection autofocus and image sensing photodiodes through multiple column bitlines
KR20230000673A (ko) 2021-06-25 2023-01-03 삼성전자주식회사 듀얼 컨버전 게인을 이용한 노이즈 감소를 위한 이미지 처리 장치 및 그 동작 방법
CN113709391B (zh) * 2021-08-26 2023-12-05 锐芯微电子股份有限公司 Cmos图像传感器及其读取方法
EP4178197A1 (en) * 2021-11-03 2023-05-10 Teledyne Innovaciones Microelectrónicas, SLU Analogue to digital converter for image sensor readout
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TW200824111A (en) * 2006-10-05 2008-06-01 Eastman Kodak Co Active pixel sensor having two wafers
TW201143066A (en) * 2010-04-06 2011-12-01 Omnivision Tech Inc High full-well capacity pixel with graded photodetector implant
TW201208054A (en) * 2010-06-30 2012-02-16 Eastman Kodak Co Low noise active pixel sensor

Cited By (2)

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Publication number Priority date Publication date Assignee Title
TWI703865B (zh) * 2017-10-05 2020-09-01 廣州印芯半導體技術有限公司 電子裝置以及取像方法
US10810395B2 (en) 2017-10-05 2020-10-20 Guangzhou Tyrafos Semiconductor Technologies Co., Ltd Electronic device and image capture method

Also Published As

Publication number Publication date
CN104780326A (zh) 2015-07-15
US20150201140A1 (en) 2015-07-16
HK1207779A1 (zh) 2016-02-05
TW201532440A (zh) 2015-08-16
CN104780326B (zh) 2018-03-27
US9402039B2 (en) 2016-07-26

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