TWI562374B - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- TWI562374B TWI562374B TW103107150A TW103107150A TWI562374B TW I562374 B TWI562374 B TW I562374B TW 103107150 A TW103107150 A TW 103107150A TW 103107150 A TW103107150 A TW 103107150A TW I562374 B TWI562374 B TW I562374B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103107150A TWI562374B (en) | 2014-03-04 | 2014-03-04 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103107150A TWI562374B (en) | 2014-03-04 | 2014-03-04 | Semiconductor device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201535734A TW201535734A (zh) | 2015-09-16 |
TWI562374B true TWI562374B (en) | 2016-12-11 |
Family
ID=54695313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103107150A TWI562374B (en) | 2014-03-04 | 2014-03-04 | Semiconductor device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI562374B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI765335B (zh) * | 2019-09-09 | 2022-05-21 | 愛爾蘭商亞德諾半導體國際無限公司 | 半導體裝置、具有閘極介電質監控能力之半導體裝置、以及用以監控金屬氧化物半導體電晶體中閘極介電質之方法 |
US11552190B2 (en) | 2019-12-12 | 2023-01-10 | Analog Devices International Unlimited Company | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114078969A (zh) | 2020-10-12 | 2022-02-22 | 台湾积体电路制造股份有限公司 | 横向扩散的mosfet及其制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201349499A (zh) * | 2012-05-31 | 2013-12-01 | Richtek Technology Corp | 橫向雙擴散金屬氧化物半導體元件及其製造方法 |
-
2014
- 2014-03-04 TW TW103107150A patent/TWI562374B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201349499A (zh) * | 2012-05-31 | 2013-12-01 | Richtek Technology Corp | 橫向雙擴散金屬氧化物半導體元件及其製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI765335B (zh) * | 2019-09-09 | 2022-05-21 | 愛爾蘭商亞德諾半導體國際無限公司 | 半導體裝置、具有閘極介電質監控能力之半導體裝置、以及用以監控金屬氧化物半導體電晶體中閘極介電質之方法 |
US11552190B2 (en) | 2019-12-12 | 2023-01-10 | Analog Devices International Unlimited Company | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region |
Also Published As
Publication number | Publication date |
---|---|
TW201535734A (zh) | 2015-09-16 |
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