TWI562374B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
TWI562374B
TWI562374B TW103107150A TW103107150A TWI562374B TW I562374 B TWI562374 B TW I562374B TW 103107150 A TW103107150 A TW 103107150A TW 103107150 A TW103107150 A TW 103107150A TW I562374 B TWI562374 B TW I562374B
Authority
TW
Taiwan
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
TW103107150A
Other languages
English (en)
Other versions
TW201535734A (zh
Inventor
Manoj Kumar
Priyono Tri Sulistyanto
Chia Hao Lee
Rudy Octavius Sihombing
Shang Hui Tu
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW103107150A priority Critical patent/TWI562374B/zh
Publication of TW201535734A publication Critical patent/TW201535734A/zh
Application granted granted Critical
Publication of TWI562374B publication Critical patent/TWI562374B/zh

Links

TW103107150A 2014-03-04 2014-03-04 Semiconductor device and method of manufacturing the same TWI562374B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103107150A TWI562374B (en) 2014-03-04 2014-03-04 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103107150A TWI562374B (en) 2014-03-04 2014-03-04 Semiconductor device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
TW201535734A TW201535734A (zh) 2015-09-16
TWI562374B true TWI562374B (en) 2016-12-11

Family

ID=54695313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103107150A TWI562374B (en) 2014-03-04 2014-03-04 Semiconductor device and method of manufacturing the same

Country Status (1)

Country Link
TW (1) TWI562374B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI765335B (zh) * 2019-09-09 2022-05-21 愛爾蘭商亞德諾半導體國際無限公司 半導體裝置、具有閘極介電質監控能力之半導體裝置、以及用以監控金屬氧化物半導體電晶體中閘極介電質之方法
US11552190B2 (en) 2019-12-12 2023-01-10 Analog Devices International Unlimited Company High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114078969A (zh) 2020-10-12 2022-02-22 台湾积体电路制造股份有限公司 横向扩散的mosfet及其制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201349499A (zh) * 2012-05-31 2013-12-01 Richtek Technology Corp 橫向雙擴散金屬氧化物半導體元件及其製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201349499A (zh) * 2012-05-31 2013-12-01 Richtek Technology Corp 橫向雙擴散金屬氧化物半導體元件及其製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI765335B (zh) * 2019-09-09 2022-05-21 愛爾蘭商亞德諾半導體國際無限公司 半導體裝置、具有閘極介電質監控能力之半導體裝置、以及用以監控金屬氧化物半導體電晶體中閘極介電質之方法
US11552190B2 (en) 2019-12-12 2023-01-10 Analog Devices International Unlimited Company High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region

Also Published As

Publication number Publication date
TW201535734A (zh) 2015-09-16

Similar Documents

Publication Publication Date Title
TWI563546B (en) Semiconductor device and methods of forming the same
TWI562209B (en) Semiconductor device and method for manufacturing the same
HK1208957A1 (zh) 半導體器件的製造方法及半導體器件
HK1231630A1 (zh) 半導體器件以及半導體器件的製造方法
SG11201606536XA (en) Semiconductor device and manufacturing method thereof
SG10201912585TA (en) Semiconductor device and method for manufacturing the same
TWI560817B (en) Semiconductor device having recessed edges and method of manufacture
HK1223192A1 (zh) 半導體器件及其製造方法
SG10201505824YA (en) Semiconductor device and method of manufacturing the same
EP3204966A4 (en) Semiconductor device and method of manufacturing the same
SG10201608814YA (en) Semiconductor device and method for manufacturing the semiconductor device
GB201402508D0 (en) Semiconductor modification process and structures
HK1216358A1 (zh) 半導體裝置以及半導體裝置的製造方法
HK1221070A1 (zh) 半導體器件和用於製造其的方法
EP3240015A4 (en) Semiconductor device and semiconductor device manufacturing method
TWI562334B (en) Semiconductor device and methods for forming the same
TWI563624B (en) Semiconductor device structure and method of fabricating the same
SG10201501819SA (en) Semiconductor device and control method of the same
HK1252326A1 (zh) 半導體器件及其製造方法
TWI563665B (en) Semiconductor device and method of manufacturing the same
TWI562362B (en) Semiconductor device structure and method for forming the same
TWI563604B (en) Semiconductor device and fabricating method thereof
HK1223733A1 (zh) 半導體裝置及半導體裝置的製造方法
GB2556255B (en) Semiconductor device and semiconductor device manufacturing method
HK1251718A1 (zh) 半導體裝置及其製造方法