TWI562282B - Integrated circuit structure and method for manufacturing the same - Google Patents

Integrated circuit structure and method for manufacturing the same

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Publication number
TWI562282B
TWI562282B TW104139874A TW104139874A TWI562282B TW I562282 B TWI562282 B TW I562282B TW 104139874 A TW104139874 A TW 104139874A TW 104139874 A TW104139874 A TW 104139874A TW I562282 B TWI562282 B TW I562282B
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TW
Taiwan
Prior art keywords
manufacturing
same
integrated circuit
circuit structure
integrated
Prior art date
Application number
TW104139874A
Other languages
English (en)
Other versions
TW201628127A (zh
Inventor
Wai Yi Lien
Yi Hsun Chiu
jia chuan You
Yu Xuan Huang
Chih Hao Wang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
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Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201628127A publication Critical patent/TW201628127A/zh
Application granted granted Critical
Publication of TWI562282B publication Critical patent/TWI562282B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
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    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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US10804148B2 (en) * 2017-08-25 2020-10-13 International Business Machines Corporation Buried contact to provide reduced VFET feature-to-feature tolerance requirements
KR102314006B1 (ko) 2017-09-11 2021-10-18 삼성전자주식회사 수직 전계 트랜지스터 및 이를 포함하는 반도체 장치
US10833173B2 (en) 2018-08-30 2020-11-10 International Business Machines Corporation Low-resistance top contact on VTFET
CN110993681B (zh) * 2019-12-06 2023-12-12 中国科学院微电子研究所 C形有源区半导体器件及其制造方法及包括其的电子设备
CN111063685B (zh) * 2019-12-18 2023-04-14 电子科技大学 一种新型互补mos集成电路基本单元
CN114242790A (zh) * 2019-12-18 2022-03-25 电子科技大学 一种新型数字门集成电路的结构
CN110828459B (zh) * 2019-12-18 2022-12-06 电子科技大学 一种新型dram集成电路的结构
CN111106161A (zh) * 2019-12-18 2020-05-05 电子科技大学 一种小比导通电阻的mosfet理想开关结构

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US9349859B1 (en) 2016-05-24
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