TWI560744B - Method and apparatus for protecting a substrate during a processing by means of a particle beam - Google Patents

Method and apparatus for protecting a substrate during a processing by means of a particle beam

Info

Publication number
TWI560744B
TWI560744B TW103107166A TW103107166A TWI560744B TW I560744 B TWI560744 B TW I560744B TW 103107166 A TW103107166 A TW 103107166A TW 103107166 A TW103107166 A TW 103107166A TW I560744 B TWI560744 B TW I560744B
Authority
TW
Taiwan
Prior art keywords
protecting
processing
particle beam
substrate during
substrate
Prior art date
Application number
TW103107166A
Other languages
English (en)
Other versions
TW201438060A (zh
Inventor
Thorsten Hofmann
Tristan Bret
Petra Spies
Nicole Auth
Michael Budach
Dajana Cujas
Original Assignee
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Gmbh filed Critical Zeiss Carl Smt Gmbh
Publication of TW201438060A publication Critical patent/TW201438060A/zh
Application granted granted Critical
Publication of TWI560744B publication Critical patent/TWI560744B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
TW103107166A 2013-03-08 2014-03-04 Method and apparatus for protecting a substrate during a processing by means of a particle beam TWI560744B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361774799P 2013-03-08 2013-03-08
DE102013203995.6A DE102013203995B4 (de) 2013-03-08 2013-03-08 Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl

Publications (2)

Publication Number Publication Date
TW201438060A TW201438060A (zh) 2014-10-01
TWI560744B true TWI560744B (en) 2016-12-01

Family

ID=51385563

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103107166A TWI560744B (en) 2013-03-08 2014-03-04 Method and apparatus for protecting a substrate during a processing by means of a particle beam

Country Status (5)

Country Link
US (1) US20140255831A1 (zh)
JP (1) JP5896540B2 (zh)
KR (1) KR101683959B1 (zh)
DE (1) DE102013203995B4 (zh)
TW (1) TWI560744B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123506B2 (en) * 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
DE102016203094B4 (de) * 2016-02-26 2022-02-10 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske
JP6673016B2 (ja) * 2016-05-30 2020-03-25 大日本印刷株式会社 フォトマスク及びその製造方法、並びにフォトマスクの欠陥修正方法
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
DE102017203879B4 (de) 2017-03-09 2023-06-07 Carl Zeiss Smt Gmbh Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske
DE102017205629A1 (de) 2017-04-03 2018-10-04 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich
DE102017208114A1 (de) 2017-05-15 2018-05-03 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Teilchenstrahl-induzierten Ätzen einer photolithographischen Maske
CN110892324B (zh) * 2017-07-21 2024-04-02 卡尔蔡司Smt有限责任公司 用于处理光刻掩模的多余材料的方法与设备
CN112394614A (zh) * 2019-08-15 2021-02-23 中芯国际集成电路制造(上海)有限公司 掩膜版、掩膜版缺陷修复方法、掩膜版的使用方法以及半导体结构
JP6987912B2 (ja) * 2020-03-16 2022-01-05 アルバック成膜株式会社 マスクブランクス、位相シフトマスク、製造方法
DE102020208183A1 (de) 2020-06-30 2021-12-30 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bearbeiten einer lithographischen maske
DE102020208568A1 (de) * 2020-07-08 2022-01-13 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat
DE102020208883B4 (de) 2020-07-16 2023-06-15 Carl Zeiss Smt Gmbh Verfahren und Computerprogramm zur Reparatur einer Maske für die Lithographie
DE102020120884A1 (de) 2020-08-07 2022-02-10 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Ätzen einer Lithographiemaske
DE102020216518B4 (de) 2020-12-22 2023-08-17 Carl Zeiss Smt Gmbh Endpunktbestimmung mittels Kontrastgas
DE102021206564A1 (de) * 2021-06-24 2022-12-29 Carl Zeiss Smt Gmbh Endpunktbestimmung durch induzierte desorption von gasen und analyse der wiederbedeckung
WO2023072919A2 (en) 2021-10-28 2023-05-04 Carl Zeiss Smt Gmbh High resolution, low energy electron microscope for providing topography information and method of mask inspection
DE102022202058A1 (de) 2022-03-01 2023-09-07 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zur maskenreparatur
CN116854024B (zh) * 2023-06-07 2024-03-15 武汉大学 一种基于硅片的单个或多个纳米级孔道的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200405422A (en) * 2002-05-14 2004-04-01 Applied Materials Inc Methods for etching photolithographic reticles
US20060199082A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Mask repair
TW200632534A (en) * 2005-01-27 2006-09-16 Applied Materials Inc Method for photomask plasma etching using a protected mask

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JPH02115842A (ja) * 1988-10-26 1990-04-27 Hitachi Ltd ホトマスク欠陥の修正方法
US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
JP2004512672A (ja) * 2000-06-06 2004-04-22 イーケーシー　テクノロジー，インコーポレイティド 電子材料製造法
JP2002072455A (ja) * 2000-08-30 2002-03-12 Nikon Corp レチクルの修正方法
US20030000921A1 (en) * 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
DE10338019A1 (de) 2003-08-19 2005-03-24 Nawotec Gmbh Verfahren zum hochaufgelösten Bearbeiten dünner Schichten mit Elektronenstrahlen
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
KR20100135099A (ko) * 2009-06-16 2010-12-24 주식회사 하이닉스반도체 극자외선 마스크의 결함 수정 방법
KR101699995B1 (ko) * 2009-06-18 2017-01-26 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법
JP5581797B2 (ja) * 2010-05-11 2014-09-03 大日本印刷株式会社 反射型マスクの製造方法
JP2012063699A (ja) * 2010-09-17 2012-03-29 Toppan Printing Co Ltd 透過型フォトマスクの製造方法
JP5740895B2 (ja) * 2010-10-01 2015-07-01 凸版印刷株式会社 Ｅｕｖマスク白欠陥修正方法
US9721754B2 (en) * 2011-04-26 2017-08-01 Carl Zeiss Smt Gmbh Method and apparatus for processing a substrate with a focused particle beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200405422A (en) * 2002-05-14 2004-04-01 Applied Materials Inc Methods for etching photolithographic reticles
TW200632534A (en) * 2005-01-27 2006-09-16 Applied Materials Inc Method for photomask plasma etching using a protected mask
US20060199082A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Mask repair

Also Published As

Publication number Publication date
KR20140110747A (ko) 2014-09-17
DE102013203995B4 (de) 2020-03-12
JP2014174552A (ja) 2014-09-22
DE102013203995A1 (de) 2014-09-11
KR101683959B1 (ko) 2016-12-07
US20140255831A1 (en) 2014-09-11
JP5896540B2 (ja) 2016-03-30
TW201438060A (zh) 2014-10-01

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