TWI560306B - - Google Patents

Info

Publication number
TWI560306B
TWI560306B TW099107204A TW99107204A TWI560306B TW I560306 B TWI560306 B TW I560306B TW 099107204 A TW099107204 A TW 099107204A TW 99107204 A TW99107204 A TW 99107204A TW I560306 B TWI560306 B TW I560306B
Authority
TW
Taiwan
Application number
TW099107204A
Other versions
TW201040307A (en
Inventor
Daniel Brien
Roland Puesche
Walter Franken
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Publication of TW201040307A publication Critical patent/TW201040307A/zh
Application granted granted Critical
Publication of TWI560306B publication Critical patent/TWI560306B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
TW099107204A 2009-03-16 2010-03-12 MOCVD reactor having a ceiling panel coupled locally differently to a heat dissipation member TW201040307A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009003624 2009-03-16
DE102010000554A DE102010000554A1 (de) 2009-03-16 2010-02-25 MOCVD-Reaktor mit einer örtlich verschieden an ein Wärmeableitorgan angekoppelten Deckenplatte

Publications (2)

Publication Number Publication Date
TW201040307A TW201040307A (en) 2010-11-16
TWI560306B true TWI560306B (zh) 2016-12-01

Family

ID=42664199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099107204A TW201040307A (en) 2009-03-16 2010-03-12 MOCVD reactor having a ceiling panel coupled locally differently to a heat dissipation member

Country Status (8)

Country Link
US (1) US20120003389A1 (zh)
EP (1) EP2408952B1 (zh)
JP (1) JP2012520578A (zh)
KR (1) KR101791245B1 (zh)
CN (1) CN102428216A (zh)
DE (1) DE102010000554A1 (zh)
TW (1) TW201040307A (zh)
WO (1) WO2010105947A1 (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101177983B1 (ko) 2007-10-11 2012-08-29 발렌스 프로세스 이큅먼트, 인코포레이티드 화학 기상 증착 반응기
TWI505400B (zh) * 2011-08-26 2015-10-21 Lg Siltron Inc 基座
CN103074608A (zh) * 2012-03-16 2013-05-01 光达光电设备科技（嘉兴）有限公司 在石墨盘中布局衬底的方法及石墨盘
DE102012102661B4 (de) * 2012-03-28 2024-01-18 Aixtron Se Verfahren zum Reinigen der Wände einer Prozesskammer eines CVD-Reaktors
JP5940375B2 (ja) * 2012-06-01 2016-06-29 シャープ株式会社 気相成長装置および窒化物半導体発光素子の製造方法
WO2014012237A1 (en) * 2012-07-19 2014-01-23 Ideal Energy Equipment (Shanghai) Ltd. Method and apparatus for growing nitride-based compound semiconductor crystals
DE102012108986A1 (de) 2012-09-24 2014-03-27 Aixtron Se Substrathalter einer CVD-Vorrichtung
DE102014104011A1 (de) * 2014-03-24 2015-09-24 Aixtron Se Vorrichtung zum Abscheiden von Nanotubes
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung
JP6662571B2 (ja) * 2015-02-03 2020-03-11 株式会社Sumco エピタキシャル成長装置、およびエピタキシャル成長方法
KR102538550B1 (ko) * 2017-01-27 2023-05-30 아익스트론 에스이 운반 링
TWI672388B (zh) 2018-06-21 2019-09-21 漢民科技股份有限公司 用於氣相沉積設備之反應腔室
DE102018121854A1 (de) * 2018-09-07 2020-03-12 Aixtron Se Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
DE102018130140A1 (de) 2018-11-28 2020-05-28 Aixtron Se Verfahren zur Herstellung eines Bestandteils eines CVD-Reaktors
DE102019104433A1 (de) * 2019-02-21 2020-08-27 Aixtron Se CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur
CN110983299B (zh) * 2019-12-04 2024-05-14 江苏实为半导体科技有限公司 一种mocvd反应腔用加热板
DE102020123326A1 (de) 2020-09-07 2022-03-10 Aixtron Se CVD-Reaktor mit temperierbarem Gaseinlassbereich
DE102020123546A1 (de) 2020-09-09 2022-03-10 Aixtron Se CVD-Reaktor mit einer Kühlfläche mit bereichsweise vergrößerter Emissivität
US12009208B2 (en) * 2021-06-07 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition equipment with adjustable temperature source
CN115838917B (zh) * 2021-11-24 2024-09-17 无锡先为科技有限公司 成膜装置
DE102022002350A1 (de) 2022-06-29 2024-01-04 Aixtron Se Vorrichtung und Verfahren zum Behandeln eines Substrates
CN118480861B (zh) * 2024-07-10 2024-10-22 中微半导体设备(上海)股份有限公司 一种气相沉积设备及其晶圆温度调节方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200846491A (en) * 2007-02-24 2008-12-01 Aixtron Ag Device and method for selectively depositing crystalline layers using mocvd or hvpe

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2628984B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
JPH11117071A (ja) * 1997-10-09 1999-04-27 Anelva Corp Ｃｖｄ装置
JP2000012463A (ja) * 1998-06-17 2000-01-14 Mitsubishi Electric Corp 成膜装置
DE10043599A1 (de) 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
KR20020088091A (ko) * 2001-05-17 2002-11-27 (주)한백 화합물 반도체 제조용 수평 반응로
DE10247921A1 (de) 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor
JP4058364B2 (ja) * 2003-03-18 2008-03-05 株式会社日立製作所 半導体製造装置
DE102004009130A1 (de) 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
JP4542860B2 (ja) * 2004-10-04 2010-09-15 大陽日酸株式会社 気相成長装置
JP2008195995A (ja) * 2007-02-09 2008-08-28 Matsushita Electric Ind Co Ltd 気相成長装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200846491A (en) * 2007-02-24 2008-12-01 Aixtron Ag Device and method for selectively depositing crystalline layers using mocvd or hvpe

Also Published As

Publication number Publication date
KR101791245B1 (ko) 2017-10-27
KR20110138382A (ko) 2011-12-27
EP2408952A1 (de) 2012-01-25
JP2012520578A (ja) 2012-09-06
CN102428216A (zh) 2012-04-25
DE102010000554A1 (de) 2010-09-30
TW201040307A (en) 2010-11-16
WO2010105947A1 (de) 2010-09-23
US20120003389A1 (en) 2012-01-05
EP2408952B1 (de) 2019-08-14

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