TWI556361B - Laser chip package structure - Google Patents

Laser chip package structure Download PDF

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TWI556361B
TWI556361B TW101146487A TW101146487A TWI556361B TW I556361 B TWI556361 B TW I556361B TW 101146487 A TW101146487 A TW 101146487A TW 101146487 A TW101146487 A TW 101146487A TW I556361 B TWI556361 B TW I556361B
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laser
double
adhesive film
sided adhesive
package structure
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TW101146487A
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Chinese (zh)
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TW201423915A (en
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吳開文
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鴻海精密工業股份有限公司
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Description

鐳射晶片封裝結構Laser chip package structure

本發明涉及一種晶片封裝結構,尤其涉及一種鐳射晶片封裝結構。The present invention relates to a chip package structure, and more particularly to a laser chip package structure.

目前之鐳射之應用越來越廣,將來會普遍用在鐳射投影系統及光通訊傳輸系統,鐳射之輸出功率是通過輸入電流控制,鐳射之輸出光功率隨著溫度之上升,其輸出功率會變小。一般電子元件操作時,其溫度會越來越高,如此當輸入電流不變時,則鐳射輸出光功率會隨著溫度升高而降低。當鐳射用在光通訊時,隨著溫度之上升,輸出功率變小會造成誤碼率之增加。At present, the application of laser is more and more widely used in the future. It will be widely used in laser projection systems and optical communication transmission systems. The output power of laser is controlled by input current. The output power of laser will increase with the increase of temperature. small. When the electronic components are operated, the temperature will be higher and higher, so that when the input current is constant, the laser output optical power will decrease as the temperature increases. When laser is used in optical communication, as the temperature rises, the output power becomes smaller, which causes an increase in the bit error rate.

有鑒於此,有必要提供一種能提升鐳射晶片散熱效果之鐳射晶片封裝結構。In view of this, it is necessary to provide a laser chip package structure that can improve the heat dissipation effect of the laser wafer.

一種鐳射晶片封裝結構,其包括:A laser chip package structure comprising:

一電路基板;a circuit substrate;

一襯墊形成在所述電路基板上,其具有一背離所述電路基板之承載面;a pad formed on the circuit substrate having a bearing surface facing away from the circuit substrate;

一雙面膠薄膜包括一黏著在所述承載面上之第一膠面,以及一與所述第一膠面相背之第二膠面;a double-sided adhesive film includes a first rubber surface adhered to the bearing surface, and a second rubber surface opposite to the first rubber surface;

一鐳射晶片附著在所述雙面膠薄膜之第二膠面,所述鐳射晶片具有一發光面,所述發光面位背離所述雙面膠薄膜之第二膠面;以及a laser wafer attached to the second adhesive surface of the double-sided adhesive film, the laser wafer having a light-emitting surface, the light-emitting surface facing away from the second rubber surface of the double-sided adhesive film;

一散熱膠體塗覆在所述襯墊之所述承載面並黏附在所述鐳射晶片及所述雙面膠薄膜之周圍,所述散熱膠體背離所述襯墊之頂面低於所述鐳射晶片之發光面以露出所述鐳射晶片之發光面,所述散熱膠體為銀膠。a heat dissipating gel coated on the bearing surface of the liner and adhered around the laser wafer and the double-sided adhesive film, the heat-dissipating gel facing away from the top surface of the liner is lower than the laser wafer The light emitting surface exposes a light emitting surface of the laser wafer, and the heat dissipating gel is silver paste.

相對於先前技術,所述散熱膠體塗覆在所述襯墊之所述表面並黏附在所述鐳射晶片及所述雙面膠薄膜之周圍,所述散熱膠體為銀膠具有良好之散熱效果,所述鐳射晶片可通過所述散熱膠體來加快散熱速度。In contrast to the prior art, the heat dissipating gel is coated on the surface of the pad and adhered around the laser wafer and the double-sided adhesive film, and the heat dissipating gel has a good heat dissipation effect. The laser wafer can accelerate the heat dissipation speed through the heat dissipating gel.

下面將結合附圖與實施例對本技術方案作進一步詳細說明。The technical solution will be further described in detail below with reference to the accompanying drawings and embodiments.

請參閱圖1,本發明實施方式提供之鐳射晶片封裝結構100包括一電路基板10,一襯墊20,一雙面膠薄膜30,一鐳射晶片40以及一散熱膠體50。Referring to FIG. 1 , a laser chip package structure 100 according to an embodiment of the present invention includes a circuit substrate 10 , a gasket 20 , a double-sided adhesive film 30 , a laser wafer 40 , and a heat dissipation gel 50 .

所述鐳射晶片40為鐳射二極體(Laser diode, LD),其應用於光纖連接傳輸系統中,所述鐳射晶片40為微晶片,其一種常用尺寸為長與寬均在200 um左右。所述鐳射晶片40具有一發光面42用於發射鐳射,本實施方式中,所述發光面42位於所述鐳射晶片40之一頂面。The laser wafer 40 is a laser diode (LD), which is applied to an optical fiber connection transmission system. The laser wafer 40 is a microchip, and a common size is about 200 um in length and width. The laser wafer 40 has a light emitting surface 42 for emitting laser light. In the embodiment, the light emitting surface 42 is located on one of the top surfaces of the laser wafer 40.

所述電路基板10用於驅動和控制所述鐳射晶片40工作。所述電路基板10可以由玻璃纖維、強化塑膠或陶瓷等材質所製成。The circuit substrate 10 is used to drive and control the operation of the laser wafer 40. The circuit board 10 can be made of a material such as glass fiber, reinforced plastic or ceramic.

所述襯墊20形成在所述電路基板10欲封裝所述鐳射晶片40之位置,且所述襯墊20之面積大於所述鐳射晶片40之面積。所述襯墊20由銅、鎳、金、銀或其合金等導電金屬性材質製成,其可以通過焊接形成在所述電路基板10上。所述襯墊20具有一背離所述電路基板10之承載面22。所述鐳射晶片40可以打線連接至所述襯墊20之承載面22,並通過所述襯墊20電性連接至所述電路基板10。The pad 20 is formed at a position where the circuit substrate 10 is to be packaged with the laser wafer 40, and the area of the pad 20 is larger than the area of the laser wafer 40. The spacer 20 is made of a conductive metallic material such as copper, nickel, gold, silver or an alloy thereof, and can be formed on the circuit substrate 10 by soldering. The gasket 20 has a bearing surface 22 facing away from the circuit substrate 10. The laser wafer 40 can be wire bonded to the carrying surface 22 of the gasket 20 and electrically connected to the circuit substrate 10 through the gasket 20.

所述雙面膠薄膜30包括一黏著在所述襯墊20之所述承載面22之第一膠面32,以及一與所述第一膠面32相背之一第二膠面34。所述雙面膠薄膜30之長度尺寸不小於所述鐳射晶片40之長度尺寸,二者以相當,即基本等於為宜。所述鐳射晶片40附著在所述雙面膠薄膜30之第二膠面34。所述鐳射晶片40之發光面42所在之頂面朝上,即背離所述雙面膠薄膜30。The double-sided adhesive film 30 includes a first adhesive surface 32 adhered to the bearing surface 22 of the liner 20, and a second adhesive surface 34 opposite the first adhesive surface 32. The length dimension of the double-sided adhesive film 30 is not less than the length dimension of the laser wafer 40, and the two are equivalent, that is, substantially equal to. The laser wafer 40 is attached to the second rubber surface 34 of the double-sided adhesive film 30. The top surface of the light-emitting surface 42 of the laser wafer 40 is facing upward, that is, facing away from the double-sided adhesive film 30.

所述散熱膠體50塗覆在所述襯墊20之所述承載面22並黏附在所述鐳射晶片40及所述雙面膠薄膜30周圍。本實施方式中,所述散熱膠體50以360度圍繞所述鐳射晶片40及所述雙面膠薄膜30周圍。所述散熱膠體50背離所述襯墊20之頂面52低於所述鐳射晶片40之發光面42以露出所述鐳射晶片40之發光面42。本實施方式中,所述散熱膠體50沿垂直所述承載面22方向之高度大於所述雙面膠薄膜30之高度且小於所述雙面膠薄膜30之高度與所述鐳射晶片40之高度之和。The heat dissipating gel 50 is coated on the bearing surface 22 of the gasket 20 and adhered around the laser wafer 40 and the double-sided adhesive film 30. In the embodiment, the heat dissipating gel 50 surrounds the laser wafer 40 and the double-sided adhesive film 30 around 360 degrees. The top surface 52 of the heat dissipating gel 50 facing away from the spacer 20 is lower than the light emitting surface 42 of the laser wafer 40 to expose the light emitting surface 42 of the laser wafer 40. In this embodiment, the height of the heat dissipating gel 50 in the direction perpendicular to the bearing surface 22 is greater than the height of the double-sided adhesive film 30 and less than the height of the double-sided adhesive film 30 and the height of the laser wafer 40. with.

本實施方式中,所述雙面膠薄膜30與所述散熱膠體50均為銀膠。In the embodiment, the double-sided adhesive film 30 and the heat dissipation colloid 50 are both silver paste.

在其他實施方式中,也可只有所述散熱膠體50採用銀膠製成,而所述雙面膠薄膜30採用環氧樹脂或其他具有黏性之材料製成。In other embodiments, only the heat dissipating gel 50 may be made of silver glue, and the double-sided adhesive film 30 may be made of epoxy resin or other adhesive material.

本發明提供之鐳射晶片封裝結構100所述散熱膠體塗覆在所述襯墊之所述表面並黏附在所述鐳射晶片及所述雙面膠薄膜之周圍,所述散熱膠體為銀膠具有良好之散熱效果,所述鐳射晶片可通過所述散熱膠體來加快散熱速度。The heat dissipation colloid of the laser chip package structure 100 provided by the present invention is coated on the surface of the pad and adhered around the laser wafer and the double-sided adhesive film, and the heat dissipating gel has good silver paste. The heat dissipation effect of the laser wafer can be accelerated by the heat dissipating gel.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100...鐳射晶片封裝結構100. . . Laser chip package structure

10...電路基板10. . . Circuit substrate

20...襯墊20. . . pad

30...雙面膠薄膜30. . . Double-sided adhesive film

40...鐳射晶片40. . . Laser chip

50...散熱膠體50. . . Heat sink

42...發光面42. . . Luminous surface

22...承載面twenty two. . . Bearing surface

32...第一膠面32. . . First rubber surface

34...第二膠面34. . . Second rubber surface

52...散熱膠體之頂面52. . . Top surface of the heat sink

圖1是本發明實施方式提供之鐳射晶片封裝結構之剖示圖。1 is a cross-sectional view showing a laser chip package structure according to an embodiment of the present invention.

100...鐳射晶片封裝結構100. . . Laser chip package structure

10...電路基板10. . . Circuit substrate

20...襯墊20. . . pad

30...雙面膠薄膜30. . . Double-sided adhesive film

40...鐳射晶片40. . . Laser chip

50...散熱膠體50. . . Heat sink

42...發光面42. . . Luminous surface

22...承載面twenty two. . . Bearing surface

32...第一膠面32. . . First rubber surface

34...第二膠面34. . . Second rubber surface

52...散熱膠體之頂面52. . . Top surface of the heat sink

Claims (6)

一種鐳射晶片封裝結構,其包括:
一電路基板;
一襯墊形成在所述電路基板上,其具有一背離所述電路基板之承載面;
一雙面膠薄膜包括一黏著在所述承載面上之第一膠面,以及一與所述第一膠面相背之第二膠面;
一鐳射晶片附著在所述雙面膠薄膜之第二膠面,所述鐳射晶片具有一發光面用於發射鐳射,所述發光面背離所述雙面膠薄膜之第二膠面;以及
一散熱膠體塗覆在所述襯墊之所述承載面並黏附在所述鐳射晶片及所述雙面膠薄膜之周圍,所述散熱膠體背離所述襯墊之頂面低於所述鐳射晶片之發光面以露出所述鐳射晶片之發光面,所述散熱膠體為銀膠。
A laser chip package structure comprising:
a circuit substrate;
a pad formed on the circuit substrate having a bearing surface facing away from the circuit substrate;
a double-sided adhesive film includes a first rubber surface adhered to the bearing surface, and a second rubber surface opposite to the first rubber surface;
a laser wafer is attached to the second rubber surface of the double-sided adhesive film, the laser wafer has a light-emitting surface for emitting laser light, the light-emitting surface faces away from the second rubber surface of the double-sided adhesive film; and a heat dissipation a colloid is coated on the bearing surface of the liner and adhered around the laser wafer and the double-sided adhesive film, and a top surface of the heat-dissipating gel facing away from the liner is lower than a light emission of the laser wafer The surface is exposed to expose a light emitting surface of the laser chip, and the heat dissipating gel is a silver paste.
如請求項1所述之鐳射晶片封裝結構,其中:所述襯墊之材質選自銅、鎳、金、銀或其合金。The laser chip package structure of claim 1, wherein the material of the spacer is selected from the group consisting of copper, nickel, gold, silver or alloys thereof. 如請求項1所述之鐳射晶片封裝結構,其中:所述散熱膠體沿垂直所述承載面之高度小於所述雙面膠薄膜之高度與所述晶片之高度之和。The laser chip package structure of claim 1, wherein: the height of the heat dissipating gel along the vertical bearing surface is less than the sum of the height of the double-sided adhesive film and the height of the wafer. 如請求項1所述之鐳射晶片封裝結構,其中:所述雙面膠薄膜之長度尺寸與所述晶片之長度尺寸相當。The laser chip package structure of claim 1, wherein: the double-sided adhesive film has a length dimension equivalent to a length dimension of the wafer. 如請求項1所述之鐳射晶片封裝結構,其中:所述雙面膠薄膜為銀膠。The laser chip package structure of claim 1, wherein the double-sided adhesive film is silver paste. 如請求項1所述之鐳射晶片封裝結構,其中:所述襯墊之面積大於所述鐳射晶片之面積。The laser chip package structure of claim 1, wherein: the area of the pad is larger than an area of the laser chip.
TW101146487A 2012-12-11 2012-12-11 Laser chip package structure TWI556361B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444301A (en) * 1993-06-23 1995-08-22 Goldstar Electron Co. Ltd. Semiconductor package and method for manufacturing the same
US6265782B1 (en) * 1996-10-08 2001-07-24 Hitachi Chemical Co., Ltd. Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
US20080001240A1 (en) * 2006-06-30 2008-01-03 Masanori Minamio Solid state image pickup device, method for manufacturing the same, semiconductor device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444301A (en) * 1993-06-23 1995-08-22 Goldstar Electron Co. Ltd. Semiconductor package and method for manufacturing the same
US6265782B1 (en) * 1996-10-08 2001-07-24 Hitachi Chemical Co., Ltd. Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
US20080001240A1 (en) * 2006-06-30 2008-01-03 Masanori Minamio Solid state image pickup device, method for manufacturing the same, semiconductor device and method for manufacturing the same

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