JP2018117088A - Substrate with reflecting member and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem in which a laser light is reflected by a reflecting surface of a reflecting member, but the reflecting member cannot fully reflect the laser light emitted from a semiconductor laser and a part of the laser light is absorbed in the reflecting member, and the absorbed light generates heat in the reflecting member, and thus the heat causes thermal expansion of the reflecting member and causes thermal deformation of the reflecting surface in a substrate provided with the reflecting member.SOLUTION: On a substrate 102 provided with a reflecting member 103, a first stepped portion 120a and a second stepped portion 120c are formed in the substrate 102, and heat of the reflecting member 103 can be efficiently released to the substrate 102 side as the reflecting member 103 is fixed so as to cover at least a part of the first stepped portion 120a and the second stepped portion 120c.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate with a reflecting member including a reflecting member for reflecting light emitted from a light emitting element, and a method for manufacturing the same.

In recent years, optical application technologies such as medical devices, optical communication, and optical discs have greatly advanced, and electronic devices used for the optical application technologies have greatly advanced. In particular, light emitting devices are required to have higher output, smaller size, and lower cost.
Conventionally, as a miniaturized light emitting device, a light emitting device in which a reflective member and a light emitting element are mounted on a substrate has been provided.

FIG. 14 is an example of a conventional light emitting device and is for explaining a semiconductor laser package in which a semiconductor laser as a light emitting element is packaged.
The semiconductor laser package 900 is configured by mounting a semiconductor laser chip 910 on a container 904 and sealing the container 904 with a transparent lid 905 (see, for example, Patent Document 1).
The semiconductor laser chip 910 includes a substrate 902 on which bonding films 906a and 906b are formed, a semiconductor laser 901, and a reflecting member 903.
A bonding film 906 a formed on the substrate 902 is a bonding film between the semiconductor laser 901 and the substrate 902, and a bonding film 906 b is a bonding film between the reflecting member 903 and the substrate 902. The semiconductor laser 901 and the reflecting member 903 are fixed on the substrate 902 by the bonding films 906a and 906b. As the reflecting member 903, a material obtained by mixing a resin material such as silicone with a filler such as a white pigment is widely used.
The semiconductor laser 901 is disposed on the substrate 902 so that a laser emission port 901E which is an emission port thereof faces the reflection surface 903S of the reflection member 903.
The semiconductor laser 901, the substrate 902, and the container 904 are formed with conductive films (not shown) for electrically connecting them, and the formed conductive films are electrically connected by wires 915a and 915b. It is connected to the.

  The semiconductor laser package 900 emits laser light 911 from the laser emission port 901E of the semiconductor laser 901 toward the reflection surface 903S of the reflection member 903, and changes the optical axis of the laser light 911 by the reflection surface 903S of the reflection member 903. . The laser beam 911 whose optical axis has been changed passes through the transparent lid 905 and is emitted to the outside of the semiconductor laser package 900.

FIG. 15 is a perspective view for explaining a conventional method of manufacturing a semiconductor laser chip.
The semiconductor laser chip 910 is manufactured from a substrate wafer 902WF having a plurality of chip formation regions 902ch for forming the semiconductor laser chip 910.
(1) First, a conductive film and bonding films 906a and 906b are formed on the flat surface of the substrate wafer 902WF.
(2) Next, a bar-like reflecting member 903 is installed and fixed on the bonding film 906b so as to straddle a plurality of chip formation regions.
(3) Next, the semiconductor laser 901 is installed and fixed on the bonding film 906a.
(4) Next, the substrate wafer 902WF is diced along the dicing line 902DL which is the boundary of the chip formation region, and the semiconductor laser chip 910 is separated into pieces.
(5) The semiconductor laser chip 910 is completed as described above.

JP 2006-32765 A

  In recent years, with the increase in functionality of electronic devices equipped with light emitting elements, in light emitting devices such as semiconductor light emitting elements, the output light is used at a low output of several tens of mW or less, and several tens to several tens. There is a demand for use in a wide output range, such as a medium output of a hundred mW level and a high output of several W level or more.

In a conventional semiconductor laser package with a reflecting member, laser light emitted from an emission port of a semiconductor laser that is a light emitting element is reflected by the reflecting member and emitted outside the semiconductor laser package. At this time, it is desirable that the reflecting member that reflects the laser light reflects all of the laser light incident on the reflecting member.
However, it is substantially difficult to reflect all laser light (for example, laser light emitted by a semiconductor laser) incident on a reflective member (for example, a resin-made reflective member). A part of the laser light that cannot be reflected by the reflecting member is absorbed in the reflecting member, and the absorbed light generates heat in the reflecting member. The heat generated in the reflecting member causes thermal expansion of the reflecting member and causes thermal deformation of the reflecting surface. Further, the heat-deformed reflective surface may cause the reflected laser beam to deviate from the prescribed optical axis, cause light scattering, and the like, leading to deterioration of the output laser beam.

In particular, a reflection member made of a resin material having low thermal conductivity hardly releases the heat inside the reflection member to the outside, and heat tends to stay inside the reflection member, so that the reflection member is likely to be thermally deformed. Furthermore, when the output of the light emitting element is high, the amount of energy of the emitted light is also high, so that the heat absorption of the reflecting member becomes more remarkable and the problem becomes large.
For example, as a high-power light emitting device using a semiconductor laser, there is a pen-type semiconductor laser knife for dentistry, and its output is about 3 to 5 W.

  This invention is made | formed in view of the above problem, and it aims at providing the board | substrate with a reflecting member which suppressed the thermal deformation of the reflecting member, and its manufacturing method.

In the substrate with a reflecting member provided with the substrate and the reflecting member on the substrate,
A step portion is formed on the substrate, and the reflecting member is a substrate with a reflecting member that covers and is fixed to at least a part of the step portion.

  It is preferable that the thermal conductivity of the substrate is higher than the thermal conductivity of the reflecting member.

  Moreover, you may provide the said protrusion part of the said board | substrate in one place or multiple places.

  The substrate may be provided with a groove, and the step may be formed by the groove.

  Furthermore, the reflection member may be formed from the bottom surface of the groove portion of the substrate.

In a method for manufacturing a substrate with a reflecting member comprising a substrate and a reflecting member on the substrate,
A method for manufacturing a substrate with a reflecting member, comprising: a step of forming a step portion on the substrate; and a step of fixing the reflecting member to the substrate so as to cover at least a part of the step portion.

  The step of fixing the reflective member to the substrate includes a step of placing a mold having a concave portion corresponding to the outer shape of the reflective member on the substrate so that the concave portion covers the step portion, and the reflective member is configured. The step of filling the concave portion with a material to be formed and forming the reflective member may be included.

  Further, the step of fixing the reflecting member to the substrate includes a step of placing a material constituting the reflecting member on the substrate, processing the material constituting the reflecting member, and forming the reflecting member. Also good.

  Furthermore, you may form the said reflection member after the process of putting the material which comprises the said reflection member on the said board | substrate.

  In addition, a groove may be formed in the substrate, and the groove may be formed while processing a material constituting the reflecting member.

  According to the present invention, by providing a reflective member that covers and fixes at least a part of the stepped portion on the substrate provided with the stepped portion, the heat generated in the reflective member is efficiently released to the substrate, and the reflective member is reflected. Thermal deformation of the surface can be suppressed. Therefore, it is possible to suppress deterioration of the reflected light due to an axial shift of reflected light reflected by the reflecting member, light scattering, or the like.

Explanatory drawing of the semiconductor laser package concerning Embodiment 1 of this invention Explanatory drawing of the board | substrate with a reflecting member which concerns on Embodiment 1 of this invention. Explanatory drawing which expanded the FIG. 2A part which shows the board | substrate with a reflecting member which concerns on Embodiment 1 of this invention. Explanatory drawing of the board | substrate with a reflecting member which concerns on Embodiment 2 of this invention. Explanatory drawing of the board | substrate with a reflecting member which concerns on another embodiment of this invention. Explanatory drawing of the board | substrate with a reflecting member which concerns on another embodiment of this invention. Explanatory drawing of the board | substrate with a reflecting member which concerns on another embodiment of this invention. Explanatory drawing of the manufacturing method of the board | substrate with a reflecting member which concerns on Embodiment 1 of this invention. Explanatory drawing of the manufacturing method of the board | substrate with a reflecting member which concerns on Embodiment 1 of this invention. Explanatory drawing of the manufacturing method of the board | substrate with a reflecting member which concerns on Embodiment 1 of this invention. Explanatory drawing of the manufacturing method of the board | substrate with a reflecting member which concerns on Embodiment 2 of this invention. Explanatory drawing of the manufacturing method of the board | substrate with a reflecting member which concerns on Embodiment 2 of this invention. Explanatory drawing of the manufacturing method of the board | substrate with a reflecting member which concerns on Embodiment 2 of this invention. Explanatory drawing of the conventional semiconductor laser package. Explanatory drawing of the manufacturing method of the conventional semiconductor laser chip.

The best mode of the present invention will be described below.
The substrate with a reflecting member has a reflecting member mounted on the substrate, and reflects light incident on the substrate with the reflecting member from a light emitting element provided outside or on the substrate.
In this embodiment, the substrate with a reflecting member according to the present invention is illustrated with reference to FIGS. 1 to 7 as an example of a semiconductor laser package in which a light emitting element is mounted on a substrate with a reflecting member and packaged. The manufacturing method of the board | substrate with a reflecting member of this invention is demonstrated with reference to.
However, the board | substrate with a reflection member of this invention and its manufacturing method are not limited to this embodiment.
For example, the present invention can be applied to a light-emitting device equipped with a light-emitting element such as a solid-state laser, a gas laser, a semiconductor laser, an LED, and an optical fiber (waveguide).

Embodiment 1
FIG. 1 illustrates a semiconductor laser package having a substrate with a reflecting member according to the present invention.
As shown in FIG. 1, the semiconductor laser package 100 includes a container 104, a semiconductor laser chip 110 mounted in the container 104, and a transparent lid 105 that seals the semiconductor laser chip 110 in the container 104.

  The semiconductor laser chip 110 includes a semiconductor laser 101 that is a light emitting element, a substrate 102, and a reflecting member 103. The semiconductor laser 101 and the reflecting member 103 are mounted on one surface of the substrate 102. A bonding film 102 e for bonding the substrate 102 and the container 104 is provided on the other surface of the substrate 102. The semiconductor laser chip 110 reflects the laser light 111 emitted from the laser emission port 101 </ b> E of the semiconductor laser 101 by the reflecting member 103 and emits the laser light 111 above the semiconductor laser chip 110. The laser beam 111 is emitted from the laser emission port 101E at a predetermined angle with respect to the optical axis 111A of the laser beam 111.

The container 104 has a bottom portion 104b formed of a flat plate, a cylindrical wall portion 104c is erected around the bottom portion 104b, and a recess 104a is provided as a space surrounded by the bottom portion 104b and the wall portion 104c. Yes. In addition, an end face 104f is provided at the upper opening end of the wall 104c.
The bottom 104b on the opening side of the recess 104a is a bottom surface 104bb, and the bottom surface 104bb has a mounting region 104bA on which the semiconductor laser chip 110 is mounted. The mounting region 104bA has a bonding film 104e made of a thin film for fixing the semiconductor laser chip 110.

The semiconductor laser chip 110 and the container 104 are bonded and fixed to the bonding film 102e and the bonding film 104e. The bonding film 102e and the bonding film 104e may be any material that can be bonded to each other, and more preferably a bonding material with good thermal conductivity. For example, a thin film in which titanium-platinum-gold (Ti-Pt-Au) is stacked in this order from the substrate 102 side can be used for the bonding film 102e, and gold-tin solder (Au-Sn) can be used for the bonding film 104e. Here, by using a thermally conductive bonding agent or the like for the bonding film 102e and the bonding film 104e, it is possible to secure a thermal flow path that efficiently releases the heat generated in the semiconductor laser chip 110 to the container 104.
Here, the semiconductor laser chip 110 and the container 104 are formed by the bonding film 102e and the bonding film 104e made of a metal material. However, the bonding film 102e and the bonding film 104e only need to be able to bond the semiconductor laser chip 110 and the container 104. , Resin materials, glass, and the like. More preferably, a material having good thermal conductivity is preferable.
In addition, although the bonding film 102e and the bonding film 104e are provided on the semiconductor laser chip 110 and the container 104, respectively, the bonding film may be provided on only one of the substrate 102 and the container 104.

The material of the container 104 of this embodiment uses iron (Fe).
The material of the container 104 is preferably a low thermal expansion material having high thermal conductivity and a thermal expansion coefficient close to that of the semiconductor laser chip 110.
With this configuration, distortion of the semiconductor laser chip 110 caused by a difference in thermal expansion between the semiconductor laser chip 110 and the container 104 can be suppressed, and a good fixed state between the semiconductor laser chip 110 and the container 104 can be maintained. .
In addition, the material of the container 104 is not restricted to the material of this embodiment. For example, in addition to an iron-based (Fe-based) material, a material having high thermal conductivity and a thermal expansion coefficient close to that of the semiconductor laser chip 110, for example, molybdenum (Mo), copper (Cu), Kovar, 42 alloy, silicon (Si ), Silicon nitride (SiC), sapphire, polychlorinated biphenyl (PCB), aluminum nitride (AlNx), and alumina (Al ₂ O ₃ ). Besides these, it can also be formed from any known material used in related applications.

  The transparent lid 105 is mounted on the end face 104f of the wall 104c of the container 104, seals the recess 104a of the container 104, and is emitted by the semiconductor laser 101 of the semiconductor laser chip 110 mounted in the recess 104a. The laser beam 111 reflected by the reflecting member 103 is transmitted and emitted to the outside of the semiconductor laser package 100.

  A bonding film 104g is interposed between the transparent lid 105 and the end face 104f of the wall 104c, and the bonding film 104g bonds the transparent lid 105 and the container 104 together. Thus, the transparent lid 105 seals the semiconductor laser package 100 in the container 104.

In the present embodiment, glass is used as the material of the transparent lid 105, but is not limited thereto.
The material of the transparent lid 105 only needs to transmit the laser beam 111. For example, the transparent lid 105 may be a crystal material such as sapphire excellent in light transmittance, or a resin material such as transparent acrylic resin.
However, for the transparent lid 105 and the container 104, it is preferable to select a material having a close thermal expansion coefficient in order to suppress a stress generated due to a difference in thermal expansion between them.
Further, when the semiconductor laser package 100 does not need to be hermetically sealed, a configuration without a transparent lid may be employed.

  The semiconductor laser chip 110 is in a position where the laser beam 111 reflected by the reflecting member 103 can be transmitted by the light transparent lid 105, and the orbit of the laser beam 111 reflected by the reflecting member 103 is within the wall portion 104 c of the container 104. The laser beam 111 is mounted on the bottom surface 104bb of the container 104 at a position where it does not hit the side surface, that is, the laser beam 111 is not kicked by the wall portion 104c.

  Next, the semiconductor laser chip 110 will be described in detail. FIG. 2 is a diagram for explaining the semiconductor laser chip 110 according to the first embodiment of the present invention. The semiconductor laser chip 110 includes a semiconductor laser 101, a conductive film 108 formed on the surface, a substrate 102 on which the semiconductor laser 101 is mounted, a conductive bonding film 106 a that fixes the semiconductor laser 101 to the substrate 102, and a substrate 102. And a reflection member 103 that reflects the laser beam 111 of the semiconductor laser 101.

Here, the direction in the semiconductor laser chip in this embodiment is defined. In the state of the semiconductor laser chip 110, the direction of the optical axis 111A of the laser light 111 emitted from the laser emission port 101E is orthogonal to the X-axis direction and the X-axis direction, and the surface on which the semiconductor laser 101 is mounted on the substrate 102 The direction orthogonal to the Z-axis direction and the direction orthogonal to the X-axis direction and the Z-axis direction are defined as the Y-axis direction.
The emission direction of the laser beam 111 in the X-axis direction is a positive direction in the X-axis direction, and the surface side on which the semiconductor laser 101 is mounted on the substrate 102 in the Z-axis direction is a positive direction in the Z-axis direction. In addition, the surfaces having the X axis, the Y axis, and the Z axis as normals are the X axis surface, the Y axis surface, and the Z axis surface, respectively.

  The semiconductor laser 101 has a rectangular parallelepiped shape. One side surface of the semiconductor laser 101 is a laser emission surface 101C having a laser emission port 101E that emits a laser beam 111 parallel to the X-axis surface, and one side surface orthogonal to the laser emission surface 101C is mounted on the substrate 102. The lower surface 101b (parallel to the Y-axis surface), which is a surface, is provided with an electrode film 101p for electrically connecting the semiconductor laser 101 and the conductive film 108 of the substrate 102. One side surface facing the lower surface 101b is an upper surface 101a, and the upper surface 101a includes an electrode film 101n for electrically connecting the semiconductor laser 101 and the container 104. The electrode films 101n and 101p are electrodes for supplying power to the semiconductor laser 101.

  As the electrode film 101n and the electrode film 101p, it is preferable to use a gold (Au) thin film in consideration of conductivity and corrosion resistance. The electrode film 101n and the electrode film 101p may be, for example, a thin film in which titanium-platinum-gold (Ti-Pt-Au) is laminated in this order from the surface of the semiconductor laser 101 from the viewpoint of adhesion to the semiconductor laser 101. .

The semiconductor laser 101 emits a laser beam 111 having a predetermined emission angle from a laser emission port 101E. The laser beam 111 is reflected by the reflecting member 103 disposed on the substrate 102 so as to face the semiconductor laser emission port 101E, and is emitted to the outside of the semiconductor laser package 100.
Laser light emitted from a general semiconductor laser spreads in an elliptical shape and is emitted. This is a phenomenon caused by the diffraction of light that occurs because the laser emission port of the semiconductor laser is rectangular, and the far-field image of the laser beam becomes an ellipse that is long in the vertical direction and short in the horizontal direction.
With the semiconductor laser 110 of this embodiment mounted on the substrate 102, the laser beam 111 is emitted about ± 30 ° in the Z-axis direction and ± 8 ° in the Y-axis direction with respect to the optical axis 111A of the laser beam 111. The light is emitted from the laser emission port 101E with a corner.

The substrate 102 is a surface on which the semiconductor laser 101 is mounted and has an upper surface 102a parallel to the Z-axis surface and a lower surface 102b facing the upper surface 102a and parallel to the Z-axis surface.
A conductive film 108 is formed on the upper surface 102 a of the substrate 102, and the conductive film 108 is conductive and bonding, and is laminated in the order of titanium-platinum-gold (Ti—Pt—Au) from the substrate 102 side. A thin film is preferred. Further, a conductive bonding film 106 a for bonding the semiconductor laser 101 and the conductive film 108 is formed at the mounting position of the semiconductor laser 101 on the conductive film 108. Gold tin solder (Au—Sn) is used as the material of the conductive bonding film 106a in the present embodiment.
Note that as the conductive bonding film 106 a used for bonding the substrate 102 and the semiconductor laser 101, Sn—Pb, In, or the like can be used, and a material having particularly high thermal conductivity is preferable.

  A bonding film 102e for fixing to the bottom surface 104bb of the container 104 is formed on the lower surface 102b of the substrate 102. The bonding film 102e is a thin film laminated in the order of titanium-platinum-gold (Ti-Pt-Au) from the substrate 102 side.

The material of the substrate 102 is close to the thermal expansion coefficient (about 6.5 × 10 ⁻⁶ / ° C.) of the semiconductor laser 101 from the viewpoint of mounting the semiconductor laser 101 that generates heat, and has an excellent thermal conductivity (100 W / (m -K) or more) It is preferable to have characteristics. The material of the substrate 102 in this embodiment is aluminum nitride (AlN), the thermal expansion coefficient is about 5.0 × 10 ⁻⁶ / ° C., and the thermal conductivity is about 150 W / (m · K). is there.

Note that the material of the substrate 102 is not limited to these. The substrate 102 is preferably made of a material excellent in thermal conductivity and having a thermal expansion coefficient close to that of the semiconductor laser 101, such as sapphire or alumina (Al ₂ O ₃ ). The thermal expansion coefficient is 3 to 10 × 10 ⁻⁶ / ° C. Examples of the material having a thermal conductivity of 100 W / (m · K) or more include silicon carbide (SiC), tungalloy (T-cBN), Cu—W, Cu—Mo, silicon (Si), and the like. In particular, when a high-power laser is used and the thermal conductivity has to be very large, diamond or the like can be used.

By setting the thermal expansion coefficients of the semiconductor laser 101 and the substrate 102 to the same or close numerical values, stress generated due to the difference in thermal expansion between the semiconductor laser 101 and the substrate 102 can be suppressed, and the fixed portion between the semiconductor laser 101 and the substrate 102 can be suppressed. Can be reduced.
Further, by making the thermal conductivity of the substrate 102 as high as possible, the heat generated by the semiconductor laser 101 can be efficiently released to the outside (such as the container 104).

FIG. 3 is an enlarged view of part A in FIG.
The substrate 102 is disposed in the positive direction of the X-axis from the laser emission surface 101C of the semiconductor laser 101, is formed so as to cross the substrate 102 in parallel to the Y-axis, and the cross-sectional shape of the Y-axis surface is a rectangular shape. 112a.
The groove portion 112a includes a groove bottom surface 112ab that is a bottom surface portion of the groove portion 112a, a side wall surface 120Wb that is a side wall portion of the groove portion 112a, and a side wall surface 120W that is located in the positive direction of the X axis from the side wall surface 120Wb And includes a first step 120a including the groove bottom surface 112ab, the side wall surface 120Wa, and the upper surface 102a, and a second step portion 120b including the groove bottom surface 112ab, the side wall surface 120Wb, and the upper surface 102a. The sidewall surface 120Wa and the sidewall surface 120Wb are surfaces parallel to the X-axis surface, and the groove bottom surface 112ab is a surface parallel to the Z-axis surface.

Further, the substrate 102 is arranged in the positive direction of the X axis from the groove 112a, is formed so as to cross the substrate 102 in parallel to the Y axis, and a part of the substrate 102 is formed so that the cross-sectional shape of the Y axis surface is a rectangular shape. A cutout L-shaped cutout 112b is provided.
The L-shaped notch portion 112b includes a notch bottom surface 112bb positioned in the negative direction of the Z-axis from the upper surface 102a of the substrate 102, and a side wall surface 120Wc that connects the upper surface 102a and the notch bottom surface 112bb of the substrate 102, and the notch bottom surface 112bb. , A side wall surface 120Wc, and a third stepped portion 120c including the upper surface 102a. Side wall surface 120Wc is parallel to the X-axis surface, and notch bottom surface 112bb is a surface parallel to the Z-axis surface.

  In addition, the substrate 102 includes a protruding portion 109 configured by a first step portion 120a and a third step portion 120c between the groove portion 112a and the L-shaped notch portion 112b. The protruding portion 109 is formed so as to cross the substrate 102 in parallel to the Y axis, and the cross-sectional shape of the Y axis surface is a rectangular shape.

  A reflective member 103 is mounted on the substrate 102. The reflection member 103 includes a reflection surface 103S for reflecting the laser beam 111 emitted from the laser emission port 101E of the semiconductor laser 101, and is installed so that the reflection surface 103S faces the laser emission surface 101C of the semiconductor laser 111. The The reflecting surface 103S has a predetermined angle with respect to the optical axis 111A in order to emit laser light 111 parallel to the X axis to the outside of the semiconductor laser package 100. In the present embodiment, the reflective surface 103S is parallel to the Y axis and Z It has a surface inclined by 45 ° with respect to the axial surface. The reflecting member 103 has a substantially triangular prism shape having the reflecting surface 103S as one surface, and the cross-sectional shape of the Y-axis surface is a substantially triangular shape.

The reflective member 103 has a substantially triangular prism-shaped one surface that is mounted on the substrate 102, and the mounting surface covers the groove 112a, the protruding portion 109, and the L-shaped notch 112b, and the reflective member 103 is mounted thereon. The surface is fixed to the substrate 102 and mounted on the substrate 102.
Specifically, the reflecting member 103 covers the groove bottom surface 112ab, the side wall surface 120Wa, the upper surface 102a of the substrate 102, the side wall surface 120Wc, and the notch bottom surface 112bb, and is fixed to the substrate 102. The first step 120a and the third step 120c on the substrate 102 are covered.
That is, the reflecting member 103 mounted on the substrate 102 is fixed so as to cover at least a part of the stepped portion of the substrate 102.

The reflecting member 103 in the present embodiment is a resin-based material cloth that contains a filler uniformly. Specifically, a silicone resin-based material is used as a cloth, and the filler is alumina (Al ₂ O ₃ ), It contains aluminum nitride (AlN), titania (TiO ₂ ) and the like.
By including a material having high thermal conductivity such as aluminum nitride (AlN) as a filler in the cloth of the resin-based material, the thermal conductivity can be increased as compared with a reflecting member made of only resin.
Incidentally, a high reflectance such as white alumina (Al 2 _{O 3)} material by a filler, it is possible to increase the reflectance of the reflecting member.

The thermal conductivity of the reflecting member 103 is preferably 0.2 to 10.0 W / (m · K), more preferably 0.4 to 5.0 W / (m · K). Further, the reflectance of the reflecting member 103 is preferably 80% or more, and more preferably 90% or more.
The cloth of the reflecting member is not limited to the silicone resin material used in the present embodiment, and for example, an epoxy resin material or an acrylic resin material can be used.

Further, from the viewpoint of improving the thermal conductivity, the filler may be a high purity alumina (Al ₂ O ₃ (99.9%)) containing aluminum nitride (AlN) or boron nitride (BN). Good. Also, a combination of aluminum (Al) and silicon oxide (SiO ₂ ), silver (Ag) and silicon oxide (SiO ₂ ) may be used as a filler, and by making the component ratio of silicon oxide (SiO ₂ ) appropriate, It is also possible to improve thermal conductivity and light reflectance. In addition, a resin or filler material can be appropriately selected according to desired characteristics such as thermal conductivity and reflectance, and various materials may be used in combination.

  Since the surface roughness of the reflecting surface 103S of the reflecting member 103 affects the reflectance, it is preferably a flat mirror surface. As for the surface roughness of the reflective surface 103S, Ra is 40 nm or less, more preferably, the surface roughness Ra is 10 nm or less.

In the present invention, the reflecting member 103 including the reflecting surface 103S is fixed so as to cover the groove bottom surface 112ab, the protruding portion 109, and the cutout bottom surface 112bb that constitute the stepped portion provided on the substrate 102.
Accordingly, the reflecting member 103 and the substrate 102 are fixed on a plurality of surfaces including the groove bottom surface 112ab, the protruding portion 109, and the notched bottom surface 112bb, so that the contact surfaces of the reflecting member and the substrate are flat with each other as in the prior art. The contact area between the reflecting member 103 and the substrate 102 is increased as compared with the case of fixing with the bonding surface, and an effect of increasing the force for fixing the reflecting member 103 and the substrate 102 can be obtained. Further, while the substrate 102 is formed of a material having a relatively high thermal conductivity, the reflective member 103 has a thermal conductivity that is higher than the thermal conductivity of the substrate 102 even when the reflective member 103 contains a filler having excellent thermal conductivity. Although much lower, since the contact area between the reflecting member 103 and the substrate 102 is large, as a result, heat can be efficiently transferred from the reflecting member 103 to the substrate 102.

  Further, since the reflecting member 103 covers at least a part of the stepped portion of the substrate 102, that is, the stepped portion of the substrate 102 bites into the reflecting member 103, the contact surface between the conventional reflecting member and the substrate is flat with each other. A part of the reflecting member in the form of fixing with a simple joining surface is replaced with the material of the substrate 102, so that the heat of the reflecting member having low thermal conductivity can be more efficiently transferred to the substrate having high thermal conductivity. it can.

  Therefore, in the embodiment of the present invention, a part of the laser beam 111 is absorbed, and the heat accumulated in the reflection member 103 is more efficiently transmitted to the substrate 102, whereby the reflection surface 103S caused by the thermal expansion of the reflection member 103 is brought about. The effect of suppressing the thermal deformation of the film and suppressing the axial deviation of the reflected light and the deterioration of the reflected light can be obtained.

Next, secondary effects according to the present embodiment will be described below.
From the viewpoint of the emission direction and emission angle of the laser beam 111, the position where the semiconductor laser 101 is mounted on the upper surface 102a of the substrate 102 is such that the laser emission surface 101C is on the side wall surface 120Wb (a surface parallel to the X-axis surface) of the groove 112a. It is preferable that the laser emission surface 101C is between the side wall surface 120Wb and the reflection surface 103S, and more preferably the same X-axis surface as the laser emission surface 101C and the side wall surface 120Wb.

  Further, a distance between the side wall surface 120Wb and the side wall surface 120Wa of the groove portion 112a, that is, a so-called groove width is appropriately provided in the X-axis direction. The groove width is set so that the reflecting member 103 having a reflecting surface 103S parallel to the Y axis and inclined by 45 ° with respect to the Z axis can be formed.

  Since the conventional semiconductor laser chip does not include the groove (groove 112a in the first embodiment) on the substrate, the −30 ° side (Z-axis negative) of the laser beam 111 emitted from the laser emission port 101E at an emission angle of ± 30 °. A part of the laser beam (half of the direction) was kicked by the upper surface of the substrate, causing loss of light.

On the other hand, in the semiconductor laser chip 110 of this embodiment, the laser beam 111 is not kicked by the upper surface 102a by providing the groove 112a on the upper surface 102a of the substrate 102.
Specifically, the −30 ° side (the negative direction side of the Z axis) of the laser beam 111 emitted from the laser emission port 101E at an emission angle of ± 30 ° is the reflection surface of the reflection member 103 formed from the groove bottom surface 112ab. Since it is reflected by 103S, the laser beam 111 is not kicked. As a result, the laser beam 111 emitted from the semiconductor laser 101 can be more efficiently sent to the reflecting surface 103S without loss of light.

Further, by providing the groove 112a on the upper surface 102a of the substrate 102, the effect of reducing the size and height of the semiconductor laser chip 110 can be obtained.
Specifically, the height of the semiconductor laser chip 110 can be reduced by reducing the thickness of the semiconductor laser 101 in the Z-axis direction by lowering the height position of the laser emission port 101E of the laser beam 111.
Further, the laser beam 111 that is the reflected light reflected in the groove 112 a is suppressed to the thickness (Z-axis direction) of the semiconductor laser 101 that is not kicked by the laser emission surface 101 </ b> C of the semiconductor laser 101. The distance in the X-axis direction between the laser emitting surface 101C and the reflecting surface 103S of the reflecting member 103 can be shortened. Further, by shortening the distance in the X-axis direction between the laser emitting surface 101C and the reflecting surface 103S, the field image projected onto the reflecting surface 103S can be reduced, and thus the reflecting member 103 can be reduced in size and height. it can.
Therefore, in the present embodiment, the substrate 102 is provided with the groove portion 112a, the reflection surface 103S is formed from the groove portion 112a, and the semiconductor laser 101 is thinned, so that the size and the height are reduced as compared with the conventional semiconductor laser chip. The effect to make is obtained.

  When the semiconductor laser 101 and the reflecting member 103 are mounted on the same substrate 102, the groove portion 112a is provided on the substrate 102, so that the semiconductor laser 101 and the reflecting member 103 are connected to the side wall surface 120Wb and the groove bottom surface of the groove portion 112a. 112ab can be separated by a part, and by doing so, heat generated when the semiconductor laser 101 is driven is hardly transmitted to the reflecting member side 103 side.

  Further, the height difference between the upper surface 102a of the substrate 102 and the groove bottom surface 112ab of the groove portion 112a, that is, the groove depth of the groove portion 112a is the thickness (Z-axis direction) of the substrate 102 composed of the upper surface 102a and the lower surface 102b of the substrate 102. On the other hand, it is preferably 1/3 to 2/3 times, and more preferably deeper than 2/3 with respect to the thickness (Z-axis direction) of the substrate 102.

  Therefore, by providing an appropriate groove depth of the groove 112a, the heat flow path connecting the semiconductor laser 101 and the reflecting member 103 can be reduced by the groove depth, so that the heat flow into the reflecting member 103 is reduced. And the effect which suppresses bad influences, such as a heat deformation of a reflection member, can be anticipated.

The height position of the protruding portion 109 of the present embodiment is formed at the same height as the upper surface 102a of the substrate 102 on which the semiconductor laser 101 is mounted from the viewpoint of reducing the manufacturing cost of the substrate 102.
Note that the height and shape of the protruding portion 109 are not limited to the present embodiment. For example, the protruding portion 109 is not limited to the same height as the upper surface 102a of the substrate 102 on which the semiconductor laser 101 is mounted, and the shape of the protruding portion may be an inclined surface, a curved surface, or the like.

Embodiment 2
FIG. 4 is a cross-sectional view for explaining a semiconductor laser chip 210 according to the second embodiment of the present invention.
The second embodiment is a modification of the substrate with a reflecting member of the first embodiment. In addition, the material of each member which comprises the board | substrate with a reflecting member in Embodiment 2 is the same as what was demonstrated in Embodiment 1. FIG. The mounting of the semiconductor laser chip 210 on the semiconductor laser package of the second embodiment has the same configuration as that of the first embodiment, and thus the description thereof is omitted.

Here, the direction in the semiconductor laser chip 210 in this embodiment is defined. In the state of the semiconductor laser chip 210, the direction of the optical axis 211A of the laser light 211 emitted from the laser emission port 201E is orthogonal to the X-axis direction and the X-axis direction, and the surface on which the semiconductor laser 201 is mounted on the substrate 202 The direction orthogonal to the Z-axis direction and the direction orthogonal to the X-axis direction and the Z-axis direction are defined as the Y-axis direction.
The emission direction of the laser beam 211 in the X-axis direction is a positive direction in the X-axis direction, and the surface side on which the semiconductor laser 201 is mounted on the substrate 202 in the Z-axis direction is a positive direction in the Z-axis direction.
Further, the surfaces having the normal axes of the X axis, the Y axis, and the Z axis are the X axis surface, the Y axis surface, and the Z axis surface.

The substrate 202 has an upper surface 202a which is the upper surface of the substrate 202 on the negative direction side of the X-axis, the cross-sectional shape of the Y-axis surface is a rectangular shape, and a part of the substrate 202 is cut away in the Y-axis direction. An L-shaped notch 212a is provided.
The L-shaped notch portion 212a includes a notch bottom surface 212ab that is a bottom surface portion of the L-shaped notch portion 212a and a side wall surface 220Wa that is a side wall portion of the L-shaped notch portion 212a, and the notch bottom surface 212ab, the side wall surface 220Wa, And a first stepped portion 220a comprising the upper surface 202a. The side wall surface 220Wa is a surface parallel to the X-axis surface, and the notch bottom surface 212ab is a surface parallel to the Z-axis surface.

The notch bottom surface 212ab of the substrate 202 is disposed in the positive direction of the X axis from the position of the laser emission surface 201C of the semiconductor laser 201 mounted on the substrate 202, and in the negative direction of the X axis from the side wall surface 220Wa. A V-shaped groove 212c formed in parallel across the notch bottom surface 212ab of the substrate 202 is provided.
The V-shaped groove 212c has a V-shaped cross-section on the Y-axis surface, and includes a side wall surface 220Wd that is a side wall on the negative side of the X axis of the substrate 202 and a side wall on the positive side of the X axis. It consists of a certain side wall surface 220We.
The side wall surface 220Wd is a surface parallel to the X-axis surface, and the side wall surface 220We is a surface inclined in the positive direction of the X axis with respect to the X-axis surface.
Further, the substrate 202 is disposed in the positive direction of the X axis from the L-shaped notch 212a, is formed to cross the substrate 202 in parallel to the Y axis, and the cross-sectional shape of the Y axis surface is a rectangular shape. An L-shaped notch 212b is cut out.
The L-shaped notch 212b includes a notch bottom 212bb that is the bottom of the L-shaped notch 212b and a side wall surface 220Wc that is a side wall of the L-shaped notch 212b. The notch bottom 212bb, the side wall 220Wc, And a second stepped portion 220c including an upper surface 202a which is the upper surface of the substrate 202. Side wall surface 220Wc is a surface parallel to the X-axis surface, and notch bottom surface 212bb is a surface parallel to the Z-axis surface.
In addition, the substrate 202 includes a protruding portion 209 including a first stepped portion 220a and a second stepped portion 220c between the L-shaped notched portion 212a and the L-shaped notched portion 212b.
The protruding portion 209 is formed across the substrate 202 in parallel to the Y axis, and the cross-sectional shape of the Y axis surface is a rectangular shape.
Note that a conductive film 208 is formed on the cutout bottom surface 212ab of the substrate 202, and further, a conductive bonding film 206a for mounting the semiconductor laser 201 is formed at a predetermined position on the conductive film 208. The semiconductor laser 201 is mounted on the conductive bonding film 206a.

A reflective member 203 is mounted on the substrate 202.
The reflection member 203 includes a reflection surface 203S for reflecting the laser beam 211 emitted from the laser emission port 201E of the semiconductor laser 201, and is installed so that the reflection surface 203S faces the laser emission surface 201C of the semiconductor laser 201. .
The reflecting surface 203S has a predetermined angle with respect to the optical axis 211A of the laser light 211, and in this embodiment is a surface that is parallel to the Y axis and inclined by 45 ° with respect to the Z axis surface. The reflecting member 203 has a substantially triangular prism shape having the reflecting surface 203S as one surface, and the cross-sectional shape of the Y-axis surface is a substantially triangular shape.

The reflecting member 203 has a substantially triangular prism-shaped one surface that is a mounting surface on the substrate 202, and the mounting surface covers the L-shaped notch 212a, the protruding portion 209, and the L-shaped notch 212b. 203 is mounted on the substrate 202 by fixing its mounting surface to the substrate 202.
Specifically, the reflecting member 203 covers the L-shaped notch 212b, the side wall surface 220Wa, the substrate upper surface 202a, the side wall surface 220Wc, and the notched bottom surface 212bb, and is fixed to the substrate 202. Is configured to cover the first stepped portion 220a and the second stepped portion 220c on the substrate 202.
That is, the reflection member 203 mounted on the substrate 202 is fixed so as to cover at least a part of the step portion of the substrate 202.

  Similar to the first embodiment, in the present embodiment, the reflecting member 203 covers and fixes the stepped portion formed by the cut-out bottom surface 212ab, the protruding portion 209, and the cut-out bottom surface 212bb of the substrate 202. By absorbing the portion, heat generated in the reflecting member 203 can be efficiently released to the substrate 202.

The contact surface between the reflecting member 203 and the notch bottom surface 212ab is a positive direction in the X-axis direction from the ridge line where the side wall surface 220We of the V-shaped groove 212c and the notch bottom surface 212ab contact each other, up to the side wall surface 220Wa of the first stepped portion 220a. Between.
In the present embodiment, the extreme end portion in the negative X-axis direction of the contact surface between the reflecting member 203 and the notch bottom surface 212ab is located on the ridge line where the side wall surface 220We and the notch bottom surface 212ab are in contact.

  By providing the V-shaped groove 212c, the heat flow path connecting the semiconductor laser 201 and the reflecting member 203 can be reduced by the depth of the groove, so that the flow of heat into the reflecting member 203 is reduced, and the reflecting member 203 The effect of suppressing adverse effects such as thermal deformation can be expected.

The laser emission port 201E of the semiconductor laser 201 is provided at a higher position than the cutout bottom surface 212ab of the substrate 202 as compared with the first embodiment.
By doing so, it is possible to avoid that the laser beam 211 emitted from the semiconductor laser 201 with a predetermined emission angle is kicked on the surface of the notch bottom surface 212ab of the substrate 202 and the side wall surface 220We of the V-shaped groove 212c. .

Another Embodiment Next, another embodiment of the substrate with a reflecting member of the present invention will be described.
FIG. 5 is a perspective view for explaining another embodiment of the substrate with a reflecting member according to the present invention. Here, the modification of the protrusion part 109 of the board | substrate 102 of Embodiment 1 is shown in FIG.5 (a)-(b), FIG.6 (c)-(d), FIG.7 (e)-(f). The five forms of the step portion of the substrate with a reflecting member will be described. 5 to 7, the reflecting member is shown as a transparent body in order to clearly show the shape of the substrate.

  FIG. 5A is a perspective view of a form in which the protruding portion 109 of the substrate 102 is divided into two or more protruding portions. The protruding portion 109 of the substrate 102 is formed on the upper surface 102a thereof so as to cross the substrate 102 in parallel to the Y axis, and includes a dividing groove portion 112s having a rectangular cross-sectional shape on the Y axis surface. Side wall surfaces 120Ws and side wall surfaces 120Wt which are both side surfaces of the split groove portion 112s are erected, and the bottom portion of the split groove portion 112s is defined as a groove bottom surface 112sb. Further, a step portion is formed from the groove bottom surface 112sb, the side wall surface 120Ws, the side wall surface 120Wt, and the upper surface 102a, and at least two protruding portions 109 are formed by these step portions.

In the present embodiment, four protruding portions 109 are formed by providing three protruding groove portions 112 s in the protruding portion 109. In addition, the groove widths of the dividing groove portions 112s are evenly allocated with an appropriate size corresponding to the width of the upper surface 102a of the protruding portion 109 in the X-axis direction. The groove depth of the dividing groove portion 112s is set to the Z-axis plane at the position of the notch bottom surface 112bb of the L-shaped notch portion 112b.
The number of the dividing grooves and the shape of the dividing grooves are not limited to the present embodiment, but one or a plurality of dividing grooves may be provided. The shape of the dividing grooves may be, for example, a cross section of the Y-axis surface. May be V-shaped or U-shaped.
In addition, the resin material of the reflecting member 103 is filled in the dividing grooves 112s without any gaps, and is fixed at the mounting position of the reflecting member 103 on the substrate 102. The reflecting member 103 is mounted on the substrate 102 as in the first embodiment. Mounted on.

FIG. 5B shows a form in which the direction of the dividing groove 112s in the protruding portion 109 in FIG. 5A is changed from the Y-axis direction to the X-axis direction, and at least two or more places as in FIG. 5A. The protruding portion 109 is formed.
In the present embodiment, five protruding portions 109 are formed by providing four dividing groove portions 112 s in the protruding portion 109. In addition, the groove widths of these dividing groove portions are evenly allocated with an appropriate size corresponding to the width in the Y-axis direction of the upper surface 102a of the protruding portion 109.
In addition, it is good also as a form provided with the division groove part which cross | intersects embodiment of Fig.5 (a), and embodiment of FIG.5 (b) which cross | intersects a Y-axis direction and a X-axis direction.

FIG. 6C is a modified example of a form having a plurality of quadrangular columnar protruding portions 109 shown in FIG. 5B, and is an embodiment in which the protruding portions 109 are formed in a columnar shape.
Furthermore, the cross-sectional shape of the protruding portion 109 on the Y-axis surface is not limited to a rectangular shape, and the cross-sectional shape of the protruding portion 109 may be a polygonal shape or a cross-sectional shape with a curve. For example, a stepped protrusion 109st (perspective view 6 (d)) having a step shape may be provided on the upper surface 102a of the protrusion 109.
Furthermore, the cross-sectional shape of the Y-axis surface of the stepped portion of the protruding portion 109 may form a curved shape at the corner of the first stepped portion 120a (the perspective view is shown in FIG. 7 (e)).

  The protruding portion 109 may have an inverted trapezoidal cross section by setting the cross-sectional shape of the Y-axis surface or the X-axis surface to be smaller than the size of the protruding portion tip portion. . FIG. 7F includes a protruding portion 109 whose cross-sectional shape in the Y-axis plane is an inverted trapezoid. Specifically, the protruding portion 109 inclines the side wall surface 120Wc of the protruding portion 109 in a positive direction parallel to the Y axis and in the positive direction with respect to the X axis surface, so that the cross section of the Y axis surface of the protruding portion 109 is increased. An inverted trapezoidal protruding portion is formed in which the size of the root portion of the protruding portion 109 in the X-axis direction is smaller than the size of the tip portion in the X-axis direction.

By making the size of the root portion smaller than the tip portion size of the protruding portion 109, an effect similar to the barb seen with a fishing hook can be obtained. With this effect, the reflecting member 103 and the substrate 102 can be more firmly fixed, and an effect of suppressing the peeling of the reflecting member 103 and the substrate 102 can be obtained.

  In the present invention, the shape of the protruding portion, the protruding direction, and the number of protruding portions are not limited to the above-described embodiment. Further, the protruding portion shape may be a protruding portion configured by a combination with any of all the configurations of the first embodiment, the second embodiment, and the other embodiments (a) to (f).

  In the present invention, the substrate 102 including the protruding portion 109 may be formed by molding the substrate 102 and the protruding portion separately and bonding them with a bonding film such as solder. It is more preferable that it is integrated from the viewpoint of manufacturing cost.

  In the present invention, the substrate 102 and the container 104 are separately configured and described. However, the present invention is not limited to this, and the substrate 102 and the container 104 may be integrally formed.

The present invention can be adapted to the recent demand for higher performance, smaller size, lower height, and improved durability of semiconductor laser chips. For example, downsizing of the semiconductor laser chip is also downsizing of the substrate. As a result, the area of the fixing portion between the substrate 102 and the reflecting member 103 is reduced, and as a result, the fixing strength of the fixing portion is reduced.
In order to configure a substrate with a reflecting member that maintains a sufficient fixing strength with a limited fixed area, a protruding portion 109 is provided on the substrate 102, and the protruding portion 109 is formed by the reflecting member 103. The effect of improving the fixing strength can be expected by covering.

Although the present invention has been described with reference to a semiconductor laser as a light emitting element, the light emitting element is not limited to this. The light emitting element according to the present invention may be a light source that emits light such as an LED, an incandescent lamp, a fluorescent lamp, and a halogen lamp.
<Manufacturing method>

Next, the manufacturing method of the board | substrate with a reflection member of this invention is demonstrated using the semiconductor laser chip 110 of Embodiment 1 as an example, using FIGS. 8-10.
In addition, about the structure of the semiconductor laser chip 110 which concerns on Embodiment 1, it is set as description of the code | symbol attached | subjected to Embodiment 1. FIG.
Here, a process of manufacturing a plurality of semiconductor laser chips 110 from a large substrate wafer will be described. The process is performed in the next STEP.

[STEP1]
FIG. 8 is a diagram for explaining a method for manufacturing a substrate with a reflecting member according to the present invention. FIG. 8A is a diagram illustrating a process of forming a conductive film, a bonding film, and a conductive bonding film on a wafer for base slope. (B) is a figure which shows a level | step-difference part formation process.
First, a substrate wafer 102WF made of aluminum nitride (AlN) and having a thickness of about 300 μm is prepared. The substrate wafer 102WF includes a plurality of chip formation regions 102ch corresponding to the semiconductor laser chips 110. A conductive film 108 for transmitting power to the semiconductor laser 101 is formed on the entire upper surface 102a of the substrate wafer 102WF, and a bonding film 102e for fixing the container 104 to the entire lower surface 102b of the substrate wafer 102WF. Form a film. The conductive film 108 and the bonding film 102e are thin films that are stacked in the order of titanium-platinum-gold (Ti-Pt-Au) from the substrate 102 side, for example, and are formed by a sputtering method, an evaporation method, or the like. Next, a resist pattern (not shown) is formed on the conductive film 108 by photolithography, and using this resist pattern as a mask, gold-tin solder (Au—Sn) is bonded to a predetermined portion on the conductive film 108 where the semiconductor laser 101 is fixed. ) Or the like is formed (FIG. 8A). The conductive bonding film 106a is formed by a sputtering method, an evaporation method, or the like.

[STEP2]
Next, the groove 112a and the groove 112b are formed on the upper surface 102a of the substrate wafer 102WF, and the protruding portion 109 is formed by these grooves.
The groove 112a and the groove 112b are formed by half-cutting the substrate wafer 102WF by dicing. In this embodiment, the groove 112a has a groove width of 300 μm and a groove depth of 100 μm, and the groove 112b has a groove width of 300 μm and a groove depth of 80 μm. The groove 112b becomes an L-shaped notch 112b when the substrate wafer 102WF is divided into individual semiconductor laser chips 110 (FIG. 8B).
In addition, although it is efficient and preferable to process the groove part 112a and the groove part 112b simultaneously, it is sufficient to process and form separately in multiple times, for example.

[STEP3]
FIG. 9 is a view for explaining the method for manufacturing a substrate with a reflecting member according to the present invention, (c) is a view showing a mold placed on a substrate wafer, and (d) is a view showing on a substrate wafer. It is the figure which formed the reflection member.
The reflecting member 103 is formed on the substrate wafer 102WF.
The reflecting member 103 is formed by transfer molding (FIG. 9D) by placing the mold 150 on the substrate wafer 102WF (FIG. 9C).

The mold 150 has a recess 150 a corresponding to the outer shape of the reflecting member 103. The mold 150 is placed on the substrate wafer 102WF so that the concave portion 150a covers the protruding portion 109.
The positioning reference surface for placing the mold 150 on the substrate wafer 102WF is the upper surface of the substrate wafer 102WF and the side wall surface 120Wb of the groove 112a.
After placing the mold 150 on the substrate wafer 102WF, a resin material (hereinafter referred to as “filler”) that contains a filler constituting the reflecting member 103 in a space (recess 150a) formed between the substrate wafer 102WF and the mold 150. , Called resin), and the resin is thermoset. Thereafter, the mold 150 is removed.

A method for forming the reflecting member 103 will be specifically described below.
The reflecting member 103 covers at least a part of the first step portion 120a and the third step portion 120c forming the protruding portion 109 of the base slope wafer 102WF, and is fixed to the base slope wafer 102WF.
Here, the reflecting member 103 is formed from the groove bottom surface 112ab of the groove portion 112a, and the maximum height in the Z-axis direction of the reflecting member 103 is 300 μm from the upper surface 102a of the substrate wafer 102WF, and the maximum in the X-axis direction of the reflecting member 103 is. The length is 400 μm.

[STEP4]
FIG. 10 is a view for explaining a method of manufacturing a substrate with a reflecting member according to the present invention, (e) is a view showing a process of dividing a wafer for a substrate, and (f) is a semiconductor laser mounted. It is a figure which shows the process to do.
Along the dicing line 102DL that divides the plurality of chip formation regions 102ch on the substrate wafer 102WF (FIG. 10E), the substrate wafer 102WF is diced using a dicing blade (not shown) to be separated into individual pieces. Thus, the substrate 102 with the reflecting member 103 is formed.

[STEP5]
The semiconductor laser 101 is mounted on the separated substrate 102 with the reflecting member 103.
The semiconductor laser 101 is mounted on the conductive bonding film 106a on the substrate 102 with the reflecting member 103 at a position where the laser emitting surface 101C faces the reflecting member 103, and fixed on the upper surface 102a of the substrate 102 by reflowing. (FIG. 10 (f)).

Here, the semiconductor laser 101 mounts the upper surface 102a of the substrate 102 on which the conductive bonding film 106a is formed and the side wall surface 120Wb of the groove 112a as a positioning reference surface.
By making the reference surface of the semiconductor laser 101 and the mold 150 common to the upper surface 102a of the substrate 102 and the side wall surface 120Wb of the groove 112a, the position of the reflecting member 103 with respect to the semiconductor laser 101 can be increased compared with the case where the reference surface is not shared. The accuracy can be maintained. Therefore, it is possible to expect the effect of suppressing the axial deviation of the optical axis 111A in the reflected light of the laser light 111, and the high-quality semiconductor laser chip 110 can be manufactured.
Furthermore, the manufacturing method of the present embodiment is different from the conventional manufacturing method in which the reflecting member is formed on the substrate by molding, thereby fixing the bar-shaped reflecting member on the substrate, and the step portion as in the present invention is provided. The reflective member can be easily formed on the substrate having the same, and the reflective member on the wafer substrate can be formed in a lump so that the mass productivity is excellent.

Further, the reflecting surface of the reflecting member is concave and can be a complicated shape such as a curved surface, and the fixing part of the reflecting member to the substrate can also be a complicated shape. Such a complicated shape can be easily manufactured by the forming method of the reflecting member using molding.
In this embodiment, the process is performed in the order of STEP4 and STEP5. However, the order is not limited to this order. For example, the order of STEP4 and STEP5 may be changed.

[STEP6]
Thus, the semiconductor laser chip 110 is completed.

Next, another embodiment of the method for manufacturing a substrate with a reflecting member of the present invention will be described with reference to FIGS. 11 to 13 by taking the semiconductor laser chip 210 of Embodiment 2 as an example.
In addition, about the structure of the semiconductor laser chip 210 which concerns on Embodiment 2, it is set as description of the code | symbol attached | subjected to Embodiment 2. FIG.
Here, a process of manufacturing a plurality of semiconductor laser chips 210 from a large substrate wafer will be described. The process is performed in the next STEP.

[STEP1]
11A and 11B are diagrams for explaining a method for manufacturing a substrate with a reflecting member according to the present invention. FIG. 11A is a diagram showing a stepped portion forming process, and FIG. It is a figure which shows the formation process of a film | membrane and an electroconductive joining film.
First, a substrate wafer 202WF made of aluminum nitride (AlN) and having a thickness of about 300 μm is prepared. The substrate wafer 202WF includes a plurality of chip formation regions 202ch corresponding to the semiconductor laser chips 210.

A groove 212a and a groove 212b are formed on the upper surface 202a of the substrate wafer 202WF, and a protruding portion 209 is formed by these grooves.
The groove portions 212a and 212b are formed by half-cutting the substrate wafer 202WF by dicing. In the present embodiment, the groove 212a has a groove width of 2250 μm and a groove depth of 100 μm, and the groove 212b has a groove width of 300 μm and a groove depth of 80 μm (FIG. 11A).

The groove 212a and the groove 212b become an L-shaped notch 212a and an L-shaped notch 212b when the substrate wafer 202WF is separated into the respective semiconductor laser chips 210.
In addition, although it is efficient and preferable to process the groove part 212a and the groove part 212b simultaneously, it is preferable to process and form it in several steps separately.

[STEP2]
Next, a conductive film 208 for transmitting power to the semiconductor laser 201 is formed on the entire surface of the groove bottom surface 212ab of the groove portion 212a of the substrate wafer 202WF, and a bonding film 202e is formed on the entire surface of the lower surface 202b of the substrate wafer 202WF. Film. The conductive film 208 and the bonding film 202e are thin films that are stacked in the order of titanium-platinum-gold (Ti-Pt-Au) from the substrate 202 side, for example, and are formed by a sputtering method, an evaporation method, or the like. Next, a resist pattern (not shown) is formed on the conductive film 208 by photolithography, and using this resist pattern as a mask, a gold-tin solder (Au—Sn) is formed at a predetermined position where the semiconductor laser 201 on the conductive film 208 is fixed. ) Or the like is formed (FIG. 11B). The conductive bonding film 206a is formed by a sputtering method, an evaporation method, or the like.

[STEP3]
FIG. 12 is a diagram for explaining a method for producing a substrate with a reflective member of the present invention, and (c) is a diagram in which a resin material for forming the reflective member 203 is applied on a substrate wafer; (D) is the figure which formed the reflective member by grinding on the wafer for substrates.

The reflecting member 203 is formed on the substrate wafer 202WF.
The reflection member 203 is applied to a substrate wafer 202WF by applying a resin material (hereinafter referred to as a resin) containing a filler constituting the reflection member 203 using screen printing, and thermosetting the resin to perform pre-molding. A body 203P is formed (FIG. 12C). The reflecting member 203 is formed by grinding the pre-formed body 203P. Simultaneously with the formation of the reflecting member 203, a V-shaped groove 212c is formed in the notch bottom surface 212ab of the base slope wafer 202WF (FIG. 12D).

Hereinafter, a method for forming the reflecting member 203 and the V-shaped groove 212c will be specifically described.
A screen mask for screen printing is placed on the substrate wafer 202WF, and the resin constituting the reflecting member 203 is placed on the screen mask. Next, the resin on the screen mask is extended with a squeegee, and the resin having a predetermined pattern is transferred onto the base slope wafer 202WF. Thereafter, the resin on the base slope wafer 202WF is thermally cured, so that the cross-sectional shape of the Y-axis surface is a semicircle and is a substantially rectangular shape parallel to the Y-axis direction. 203P is formed on the substrate wafer 202WF (FIG. 12C).

The pre-formed body 203P that is the base of the reflecting member 203 covers at least a part of the first stepped portion 220a and the second stepped portion 220c that form the protruding portion 209 of the base slope wafer 202WF, and the base slope wafer 202WF. Fixed to.
Subsequently, the pre-formed body 203P is cut into the shape of the reflecting member 203 using a grinding machine. Thus, the reflection member 203 is formed. Further, when the reflecting surface 203S of the reflecting member 203 is processed, a V-shaped groove 212c is formed in the notch bottom surface 212ab of the base slope wafer 202WF at the same time. The side wall surface 220Wd of the V-shaped groove 212c is formed to be a surface parallel to the X-axis surface of the substrate 202 (FIG. 12D). Further, by grinding the reflecting surface 203S and the V-shaped groove 212c, the notch bottom surface 212ab of the substrate wafer 202WF and the side wall surface 220Wd of the V-shaped groove 212c are positioned as a positioning reference surface when the semiconductor laser 210 is mounted. Become.

[STEP4]
FIGS. 13A and 13B are diagrams for explaining a method of manufacturing a substrate with a reflecting member according to the present invention, FIG. 13E is a diagram showing a process of separating a substrate wafer, and FIG. It is a figure which shows the process to do.
Along the dicing line 202DL that divides a plurality of chip formation regions 202ch on the substrate wafer 202WF (FIG. 13E), the substrate wafer 202WF is diced using a dicing blade (not shown) to be separated into individual pieces. Thus, the substrate 202 with the reflecting member 203 is formed.

[STEP5]
The semiconductor laser 201 is mounted on the separated substrate 202 with the reflecting member 203.
The semiconductor laser 201 is mounted on the conductive bonding film 206a on the substrate 202 with the reflecting member 203 at a position where the laser emitting surface 201C faces the reflecting member 203, and fixed on the upper surface 202a of the substrate 202 by reflowing. (FIG. 13 (f)).

Here, the semiconductor laser 201 mounts the notch bottom surface 212ab of the substrate 202 on which the conductive bonding film 206a is formed and the side wall surface 220Wd of the V-shaped groove 212c as positioning reference surfaces.
Since the positioning reference surface on which the semiconductor laser 201 is placed and the positioning reference surface formed by the side wall surface 220Wd of the V-shaped groove 212c are made common, the position of the reflecting member 203 relative to the semiconductor laser 201 can be compared to the case where the semiconductor laser 201 is not made common. Can be maintained with high accuracy. Therefore, it is possible to expect an effect of suppressing the axial deviation of the optical axis 211A in the reflected light of the laser light 211, and a high-quality semiconductor laser can be manufactured.

Furthermore, the manufacturing method of the present embodiment is different from the conventional manufacturing method in which the reflecting member is formed on the substrate by molding, thereby fixing the bar-shaped reflecting member on the substrate, and the step portion as in the present invention is provided. The reflective member can be easily formed on the substrate having the same, and the reflective member on the wafer substrate can be formed in a lump so that the mass productivity is excellent.
In this embodiment, the process is performed in the order of STEP4 and STEP5. However, the order is not limited to this order. For example, the order of STEP4 and STEP5 may be changed.

[STEP6]
Thus, the semiconductor laser chip 210 is completed.

  In the manufacturing method according to the embodiment of the present invention, since the surface roughness of the reflecting surface of the reflecting member affects the reflectance, it is preferably a flat mirror surface. For example, when the reflective surface is formed by injection molding using mold molding, grinding, or the like, the reflective surface secures a mirror surface. The surface of the reflecting surface has a surface roughness Ra of 40 nm or less, more preferably a surface roughness Ra of 10 nm or less.

  In the manufacturing method according to the embodiment of the present invention, since the protruding portions 109 to 209 are provided, the fixing area between the substrates 102 to 202 and the reflecting members 103 to 203 is increased, and the substrate is peeled off at the fixing portion boundary surface. Therefore, a suitable function is achieved by grinding or dicing in the manufacturing process.

  As mentioned above, although the board | substrate and the manufacturing method of the board | substrate of this invention were demonstrated based on embodiment, the board | substrate and board | substrate manufacturing method of this invention are not limited to this embodiment, Each structure has the same function. Any configuration can be substituted. In addition, any other configuration may be added to the present invention.

100 Semiconductor laser package 101 Semiconductor laser 101a Upper surface 101b Lower surface 101n Electrode film 101p Electrode film 101C Laser emission surface 101E Laser emission port 102 Substrate 102a Upper surface 102b Lower surface 102e Bonding film 102ch Chip formation region 102DL Dicing line 102WF Substrate wafer 103 Reflective member 103S Reflection Surface 104 Container 104a Recess 104b Bottom 104bb Bottom 104bA Mounting area 104c Wall 104e Bonding film 104f End face 104g Bonding film 105 Transparent lid 106a Conductive bonding film 108 Conductive film 109 Projecting part 109st Step-like protruding part 110 Semiconductor laser chip 111 Laser beam 111A Optical axis 112a Groove 112ab Groove bottom 112b L-shaped notch (groove)
112bb Notched bottom 112s Split groove 112sb Groove bottom 120a First step 120b Second step 120c Third step 120Ws Side wall surface 120Wt Side wall surface 120Wa Side wall surface 120Wb Side wall surface 120Wc Side wall surface 150 Mold 150a Recess 201 Semiconductor laser 201C Laser emission Surface 201E Laser emission port 202 Substrate 202a Upper surface 202ch Chip formation region 202e Bonding film 202DL Dicing line 202WF Substrate wafer 203 Reflecting member 203P Pre-formed body 203S Reflecting surface 206a Conductive bonding film 208 Conductive film 209 Protruding portion 210 Semiconductor laser chip 211 Laser beam 211A Optical axis 212a L-shaped notch (groove)
212ab Notch bottom 212b L-shaped notch (groove)
212bb Notched bottom surface 212c V-shaped groove 220a First stepped portion 220c Second stepped portion 220Wa Side wall surface 220Wc Side wall surface 220Wd Side wall surface 220We Side wall surface 900 Semiconductor laser package 901 Semiconductor laser 901E Laser emission port 902 Substrate 902ch Chip formation region 902WF For substrate Wafer 902DL Dicing line 903 Reflective member 903S Reflective surface 904 Container 905 Transparent lid 906a Bonding film 906b Bonding film 910 Semiconductor laser chip 911 Laser beam 915a Wire 915b Wire

Claims (11)

In the substrate with a reflecting member provided with the substrate and the reflecting member on the substrate,
A stepped portion is formed on the substrate, and the reflecting member covers and fixes at least a part of the stepped portion.   The board | substrate with a reflection member of Claim 1 whose thermal conductivity of the said board | substrate is higher than the thermal conductivity of the said reflection member.   The said step part of the said board | substrate is provided in one place or multiple places, The board | substrate with a reflecting member of Claim 1 or Claim 2 characterized by the above-mentioned.   The substrate with a reflecting member according to claim 1, wherein a groove portion is formed in the substrate, and the step portion is formed by the groove portion.   The substrate with a reflecting member according to claim 4, wherein at least a part of the reflecting member is fixed to a bottom surface of the groove portion of the substrate.   6. The substrate with a reflecting member according to claim 1, wherein the step portion of the substrate forms a protruding portion protruding from the surface of the substrate. In a method for manufacturing a substrate with a reflecting member comprising a substrate and a reflecting member on the substrate,
The manufacturing method of the board | substrate with a reflecting member characterized by including the process of forming a level | step-difference part in the said board | substrate, and the process of fixing the said reflecting member to the said board | substrate so that at least one part of the said level | step-difference part may be covered.   The step of fixing the reflective member to the substrate includes a step of placing a mold having a concave portion corresponding to the outer shape of the reflective member on the substrate so that the concave portion covers the step portion, and the reflective member is configured. The method for manufacturing a substrate with a reflecting member according to claim 7, further comprising a step of filling the concave portion with the material to be formed and forming the reflecting member.   The step of fixing the reflecting member to the substrate includes a step of placing a material constituting the reflecting member on the substrate, and a step of forming the reflecting member by processing the material constituting the reflecting member. The manufacturing method of the board | substrate with a reflecting member of Claim 7 characterized by the above-mentioned.   The method for manufacturing a substrate with a reflecting member according to claim 9, wherein the step of forming the reflecting member is performed after the step of placing the material constituting the reflecting member on the substrate. 11. The method for manufacturing a substrate with a reflecting member according to claim 10, wherein the substrate is formed with a groove, and the groove is formed while processing a material constituting the reflecting member.

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