JP6057161B2 - Light emitting device - Google Patents

Description

  Embodiments described herein relate generally to a light emitting device.

  For example, there is a light emitting device that combines a semiconductor light emitting element, a phosphor that converts the wavelength of light, and a wiring board on which the semiconductor light emitting element is mounted. Such a light emitting device is applied to an illumination device such as a projector. It is desired to increase the light output by increasing the output of the light emitting device.

  Therefore, in order to dissipate heat generated in the semiconductor light emitting element, a heat dissipating member may be provided on the side of the wiring board where the semiconductor light emitting element is not disposed. In some cases, a conductive grease layer having good thermal conductivity is provided between the wiring board and the heat dissipation member. However, since the conductive grease layer does not have an adhesive property, the grease layer may flow out to the semiconductor light emitting element side of the wiring board and cause a short circuit, which may reduce reliability.

JP 2012-84733 A

  Embodiments of the present invention provide a light-emitting device that is practical and reliable with high output.

According to the embodiment of the present invention, a light emitting device including a heat dissipation member, a wiring board portion, a grease layer, a light emitting element portion, and a structure is provided. The wiring board portion is provided on the heat dissipation member. The grease layer is provided between the heat radiating member and the wiring board portion and is conductive. The light emitting element portion is provided on the upper surface of the wiring board portion. The light emitting element unit includes a semiconductor light emitting element that emits first light, and a wavelength conversion layer that absorbs the first light and emits second light having a wavelength different from the wavelength of the first light. . The structure is provided around the light emitting element portion on the upper surface. The wiring board portion is electrically connected to the insulating substrate, a first metal layer provided between the substrate and the semiconductor light emitting element on the substrate, and the first metal layer on the substrate. The first and second connectors, and the structure is provided around the first metal layer and the first and second connectors on the upper surface.

  According to the embodiment of the present invention, a light-emitting device that is practical and reliable with high output is provided.

FIG. 1A to FIG. 1D are schematic views illustrating the light emitting device according to the first embodiment. FIG. 2A to FIG. 2H are schematic cross-sectional views illustrating the light emitting device according to the first embodiment. FIG. 3A and FIG. 3B are schematic plan views illustrating another light emitting device according to the first embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A to FIG. 1D are schematic views illustrating the light emitting device according to the first embodiment. FIG. 1A is a plan view. FIG. 1B is a plan view illustrating a part of the light emitting device. FIG. 1C is a cross-sectional view taken along line A1-A2 of FIG. FIG. 1D is a cross-sectional view taken along line B1-B2 of FIG.

  As shown in FIG. 1A to FIG. 1D, the light emitting device 110 according to this embodiment includes a heat dissipation member 51, a wiring board portion 15, a grease layer 52, a light emitting element portion 35, and a structure. And a body 60.

  A direction from the heat radiation member 51 toward the wiring board portion 15 is defined as a stacking direction (Z-axis direction). One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.

  The heat dissipation member 51 is, for example, a plate shape. In this example, the shape of the heat dissipation member 51 when projected onto the XY plane is, for example, a rectangle. In the embodiment, the shape of the heat dissipation member 51 is arbitrary.

  The wiring board portion 15 is provided on the heat dissipation member 51.

  In the specification of the present application, the state provided above includes not only the state provided in direct contact but also the state where another element is inserted therebetween.

  The grease layer 52 is provided between the heat dissipation member 51 and the wiring board unit 15. The grease layer 52 is conductive. For the grease layer 52, for example, a lubricating oily substance can be used.

  As illustrated in FIG. 1D, the grease layer 52 includes, for example, a plurality of particles 52a and a liquid material 52b in which the plurality of particles 52a are dispersed. For example, a material having high conductivity is used for the plurality of particles 52a. For example, metal (including alloy) particles can be used as the plurality of particles 52a. The plurality of particles 52a may include an oxide. For example, particles containing at least one of aluminum, copper, nickel, silver, and gold can be used for the plurality of particles 52a. For example, silicone oil can be used for the liquid body 52b. Thereby, the grease layer 52 can have conductivity as well as a lubricating oil property. In FIG. 1C, illustration of the plurality of particles 52a is omitted.

  The wiring board unit 15 includes, for example, a substrate 10, a first metal layer 11, and a second metal layer 12.

  The substrate 10 is insulative. For example, ceramic is used for the substrate 10. As the substrate 10, for example, an alumina substrate is used. By using ceramic as the substrate 10, high thermal conductivity can be ensured while ensuring stable insulation.

  The substrate 10 has a first main surface 10a and a second main surface 10b. The second main surface 10 b is a surface facing the heat radiating member 51. The first main surface 10a is a surface opposite to the second main surface 10b. The first major surface 10 a corresponds to the upper surface of the substrate 10.

  The first metal layer 11 is provided on the upper surface of the substrate 10 (on the first main surface 10a). The second metal layer 12 is provided between the substrate 10 and the grease layer 52. For example, the second metal layer 12 is electrically insulated from the first metal layer 11.

  As shown in FIG. 1B, the outer edge 12r of the second metal layer 12 is the outer edge of the substrate 10 when projected onto a plane (XY plane) parallel to the upper surface 15a of the wiring board portion 15. Located inside 10r. Thereby, for example, the insulation between the first metal layer 11 and the second metal layer 12 is improved. At least a part of the outer edge 12r of the second metal layer 12 may be located inside the outer edge 10r of the substrate 10. The outer edge 12r of the second metal layer 12 is located on the outer side of an outer edge 35r of the light emitting element section described later, for example. Thereby, the heat spread effect by the 2nd metal layer 12 increases. And the heat dissipation efficiency improves because the contact area with the grease layer 52 becomes large. Further, the resistance of the wiring board portion 15 to thermal stress and external force is improved. By forming the outer edge 12r of the second metal layer 12 away from the outer edge 10r of the substrate 10, the wiring board portion 15 can be easily formed. In other words, when a plurality of wiring board portions 15 are collectively formed using a single large substrate, the substrate 10 can be easily divided and manufactured.

  The grease layer 52 is provided in a region between the second metal layer 12 and the heat dissipation member 51. Further, in this example, a part of the grease layer 52 covers the side surface of the second metal layer 12. A part of the grease layer 52 is in contact with the second main surface 10 b of the substrate 10 around the second metal layer 12. Further, a part of the grease layer 52 may extend on the side surface of the substrate 10. In the present embodiment, it is sufficient that at least a part of the grease layer 52 is provided between the heat dissipation member 51 and the wiring board part 15, and the grease layer 52 extends to other parts on the lower surface side of the wiring board part 15. May be present. Thereby, the thermal resistance between the wiring board part 15 and the heat radiating member 51 can be reduced. By designing in this way, for example, the manufacturing margin when forming the grease layer 52 is widened.

  As shown in FIG. 1A, the wiring board unit 15 includes, for example, a first electrode unit 11e, a second electrode unit 11f, a first wiring unit 45e, and a second wiring unit 46e. The first electrode part 11e, the second electrode part 11f, the first wiring part 45e, and the second wiring part 46e are formed by the first metal layer 11. That is, these are included in the first metal layer 11. That is, the first electrode portion 11e, the second electrode portion 11f, the first wiring portion 45e, and the second wiring portion 46e are provided on the first main surface 10a of the substrate 10. One end of the first wiring part 45e is electrically connected to the first electrode part 11e. One end of the second wiring part 46e is electrically connected to the second electrode part 11f.

  As shown in FIG. 1A, the wiring board unit 15 further includes a first connector 45 and a second connector 46 provided on the first main surface 10 a of the board 10. The other end of the first wiring part 45e is electrically connected to the first connector 45. The other end of the second wiring part 46 e is connected to the second connector 46.

  The light emitting element part 35 is provided on the upper surface 15 a of the wiring board part 15. The upper surface 15 a of the wiring board portion 15 corresponds to the first main surface 10 a of the substrate 10 or the upper surface 11 a of the first metal layer 11. That is, in the region where the first metal layer 11 is provided on the first main surface 10 a of the substrate 10, the upper surface 15 a of the wiring board portion 15 corresponds to the upper surface 11 a of the first metal layer 11. In the region where the first metal layer 11 is not provided on the first main surface 10 a of the substrate 10, the upper surface 15 a of the wiring substrate unit 15 corresponds to the first main surface 10 a of the substrate 10. For example, a part of the light emitting element part 35 is provided on the first main surface 10 a of the substrate 10, and another part of the light emitting element part 35 is provided on the upper surface 11 a of the first metal layer 11.

  The light emitting element unit 35 includes the semiconductor light emitting element 20 and the wavelength conversion layer 31. The semiconductor light emitting element 20 is provided on a part of the first metal layer 11. The semiconductor light emitting element 20 emits first light.

  For example, the semiconductor light emitting element 20 includes a first semiconductor layer 21, a second semiconductor layer 22, and a light emitting layer 23. The first semiconductor layer 21 includes a first portion 21a and a second portion 21b. The second portion 21b is aligned with the first portion 21a in a direction parallel to the upper surface 15a of the wiring board portion 15 (direction parallel to the XY plane). The first semiconductor layer 21 is the first conductivity type.

  The second semiconductor layer 22 is provided between the second portion 21 b and the wiring board portion 15. The second semiconductor layer 22 is of the second conductivity type. The light emitting layer 23 is provided between the second portion 21 b and the second semiconductor layer 22.

  The first conductivity type is, for example, n-type, and the second conductivity type is, for example, p-type. The first conductivity type may be p-type and the second conductivity type may be n-type. For the first semiconductor layer 21, the second semiconductor layer 22, and the light emitting layer 23, for example, a nitride semiconductor is used.

  As illustrated in FIG. 1C, the first electrode portion 11 e is provided between the substrate 10 and the first portion 21 a on the upper surface (first main surface 10 a) of the substrate 10. The second electrode portion 11 f is provided between the substrate 10 and the second semiconductor layer 22 on the upper surface of the substrate 10. As described above, the first metal layer 11 (at least a part thereof) is provided between the substrate 10 and the semiconductor light emitting element 20.

  And the 1st connection member 21e provided between the 1st electrode part 11e and the 1st portion 21a, the 2nd connection member 22e provided between the 2nd electrode part 11f and the 2nd semiconductor layer 22, Are provided. The first connection member 21e and the second connection member 22e can be included in the wiring board unit 15, for example. Alternatively, the first connection member 21 e and the second connection member 22 e may be regarded as separate bodies from the wiring board portion 15.

  As described above, the semiconductor light emitting element 20 is disposed on the first electrode portion 11e and on the second electrode portion 11f. Via the first connector 45, the first wiring part 45e, the first electrode part 11e, the first connection member 21e, the second connector 46, the second wiring part 46e, the second electrode part 11f and the second connection member 22e, the semiconductor A current is supplied to the light emitting element 20, and light is emitted from the semiconductor light emitting element 20.

  The semiconductor light emitting element 20 is, for example, a flip chip type semiconductor light emitting element. The semiconductor light emitting element 20 may be a thin film type. In the thin film type, the crystal growth substrate used for crystal growth of the semiconductor layer is removed.

  In FIG. 1A, four semiconductor light emitting elements 20 are drawn for easy understanding of the drawing, but the number of semiconductor light emitting elements 20 is arbitrary. In the present embodiment, the number of the semiconductor light emitting elements 20 may be 1 or more and 500 or less, preferably 50 or more and 200 or less. When the number of the semiconductor light emitting elements 20 is large, strong light emission can be obtained. For example, a high luminous flux divergence can be obtained by arranging with high density.

  As illustrated in FIG. 1A and FIG. 1C, the structure 60 is provided around the light emitting element portion 35 on the upper surface 15 a of the wiring board portion 15. In this example, the structure 60 continuously surrounds the light emitting element portion 35. The structure 60 will be described later.

  As shown in FIG. 1A and FIG. 1D, in this example, the wiring board portion 15 is fixed to the heat radiating member 51 using an elastic fixing member 55. This is because the grease layer 52 is a paste-like material having no adhesiveness, that is, the wiring board portion 15 and the heat dissipation member 51 cannot be joined only by the grease layer 52. For example, a plate-like spring is used for the elastic fixing member 55, for example. For example, one end of each of the four elastic fixing members 55 is fixed to the upper surface of the heat radiating member 51 with screws 56. The wiring board portion 15 is disposed between the other end of the elastic fixing member 55 and the heat dissipation member 51. The wiring board portion 15 is substantially fixed to the heat dissipation member 51 by the elasticity of the elastic fixing member 55. As described above, the light emitting device 110 may further include the elastic fixing member 55. The elastic fixing member 55 limits (for example, fixes) a change in the relative position between the heat dissipation member 51 and the wiring board portion 15. In this example, the elastic fixing member 55 is directly or indirectly provided on the heat dissipation member 51. In this example, the elastic fixing member 55 is fixed to the heat radiating member 51 with screws 56. The wiring board portion 15 is substantially fixed to the heat dissipation member 51 by the elastic fixing member 55. That is, the relative position is limited within the deformation range of the elastic fixing member 55.

  In the light emitting element portion 35, heat is generated with light emission. Stress is generated between the heat dissipation member 51 and the wiring board portion 15 due to, for example, a difference in thermal expansion coefficient, and deformation of the heat dissipation member 51, deformation of the wiring board portion 15, damage to the wiring board portion 15 ( Cracks, etc.) may occur. At this time, such deformation and damage can be suppressed by fixing the wiring board portion 15 using the elastic fixing member 55. The elastic fixing member 55 may be connected to the heat radiating member 51 indirectly, that is, via another member. For example, a spring or the like may be used for the elastic fixing member 55.

  On the other hand, the heat generated in the wiring board portion 15 according to the present embodiment is transmitted to the heat radiating member 51 via the grease layer 52 and efficiently radiated.

  At this time, there is a configuration in which the wiring board portion 15 is firmly fixed to the heat radiating member 51 by, for example, a metal solid such as solder. In this case, heat generated in the wiring board portion 15 is transmitted to the heat radiating member 51 through the solder. However, since it is firmly fixed by solder, the stress caused by the difference in thermal expansion coefficient is not relaxed. For this reason, it becomes easy to produce said deformation | transformation and damage (crack etc.) by stress.

  On the other hand, in this embodiment, the wiring board part 15 is fixed to the heat radiating member 51 through the grease layer 52 which is easy to deform | transform, for example. By using the grease layer 52, a minute change in the relative position between the wiring board portion 15 and the heat dissipation member 51 can be allowed. Thereby, the deformation | transformation and damage (crack etc.) by stress can be suppressed.

  In the grease layer 52, in order to obtain high thermal conductivity, the grease layer 52 is designed to have conductivity or low resistance. For example, the grease layer 52 includes a plurality of particles 52a, and by using metal (including alloy) particles as the particles 52a, the grease layer 52 can have high conductivity. That is, in order to obtain high conductivity, the grease layer 52 is designed to have conductivity as well as a lubricating oil property.

However, according to the study of the present inventor, it has been found that the grease layer 52 spreads depending on the usage state of the light emitting device, and the spread grease layer 52 may cause an electrical short circuit. For example, in the actual usage state of the light emitting device, the light emitting element portion 35 of the light emitting device may be disposed on the lower side with respect to gravity and the heat dissipation member 51 may be disposed on the upper side. Alternatively, the light emitting device is used while being inclined with respect to gravity. That is, the light emitting device is not necessarily used in a state where the light emitting element portion 35 is positioned on the heat radiating member 51. Furthermore, a very large amount of heat is generated in the very bright light emitting device targeted by the present embodiment (for example, the luminous flux divergence is 10 lm / mm ² or more). For this reason, temperature becomes very high and the viscosity of the grease layer 52 falls very much. For this reason, depending on the state of use, the grease layer 52 tends to spread, a part of the grease layer 52 reaches the first main surface 10a side of the substrate 10 and the conductive grease layer 52 becomes the first metal layer. 11 may be touched. As a result, an electrical short circuit occurs.

  On the other hand, in the light emitting device 110 according to the present embodiment, the structure 60 is provided. The structure 60 can be provided by adhesion, for example. The structural body 60 is provided around the light emitting element portion 35 on the upper surface 15 a of the wiring board portion 15. The structure 60 is also provided around the first metal layer 11, the first connector 45, and the second connector 46. The structure 60 becomes a protrusion surrounding the electrical member on the upper surface 15a. With this structure 60, when the grease layer 52 spreads from a predetermined position and reaches the first main surface 10a side of the substrate 10, the spread grease layer 52 is blocked (dammed). The structure 60 can prevent the grease layer 52 from entering the region where the light emitting element portion 35 is provided.

  In FIG. 1C, the structure 60 has a height h <b> 60 that is larger than the gap g <b> 52 between the heat dissipation member 51 and the wiring board portion 15. The height h <b> 60 of the structure body 60 is a distance between the upper end of the structure body 60 (an end opposite to the wiring board portion 15 of the structure body 60) and the wiring board portion 15. In this example, the gap g52 corresponds to the distance between the second metal layer 12 and the heat dissipation member 51. The gap g52 corresponds to the thickness of the grease layer 52 in the region between the second metal layer 12 and the heat dissipation member 51. The gap g52 between the heat dissipation member 51 and the wiring board portion 15 is, for example, not less than 5 μm and not more than 200 μm, for example, about 60 μm.

  Considering the amount of spread of the grease layer 52 at a high temperature in actual use, the grease layer 52 is set by setting the height h60 of the structural body 60 to be not less than the gap g52 between the heat radiation member 51 and the wiring board portion 15. Can be effectively blocked.

  As illustrated in FIG. 1B, the outer edge 12 r of the second metal layer 12 is along the outer edge 10 r of the substrate 10 and is located outside the outer edge 35 r of the light emitting element portion 35. Thus, the area of the second metal layer 12 is designed to be relatively large. Thereby, since the grease layer 52 can be brought into contact with the second metal layer 12 in a wide range, high heat dissipation is obtained.

As described above, the height h60 of the structure 60 is set to be equal to or greater than the gap g52 between the heat dissipation member 51 and the wiring board portion 15, so that the height h60 of the structure 60 is within the grease layer 52. It becomes more than the thickness of the main part. Thereby, the grease layer 52 can be effectively blocked practically.
According to the present embodiment, a practical light emitting device with high output can be provided.

  Further, as already described, a part of the grease layer 52 is provided in the other part on the lower surface side of the wiring board portion 15 in addition to the region between the heat radiation member 51 and the wiring board portion 15. Also good. In such a case, the amount of the grease layer 52 that spreads during use also increases. For example, in such a case, the height h60 of the structure 60 may be further increased.

  The height of the structure 60 may be equal to or greater than the thickness t10 of the substrate 10. The thickness t10 of the substrate 10 is, for example, not less than 300 μm and not more than 1,500 μm, for example, about 635 μm. Thereby, the spread grease layer 52 can be more reliably blocked.

  You may set larger than 1/2 of height h35 of the light emitting element part 35 of the structure 60. FIG. The height h35 of the light emitting element part 35 is, for example, not less than 200 μm and not more than 2,000 μm, for example, about 1,000 μm. Thereby, the spread grease layer 52 can be more reliably blocked.

  The height h60 of the structure 60 is set so as to block the spread grease layer 52 and suppress the penetration of the grease layer 52 into the region where the light emitting element portion 35 is provided.

  When the height h60 of the structural body 60 is excessively high, light emitted from the light emitting element portion 35 is excessively applied to the structural body 60, and for example, deterioration of the structural body 60 may be promoted. In addition, light may be absorbed by the structure 60, and light extraction efficiency may be reduced. For this reason, the height h60 of the structure 60 is not excessively increased.

  For example, the height h60 of the structure 60 is set to be equal to or lower than the height h35 of the light emitting element portion 35. Thereby, deterioration of the structure 60 and the fall of light extraction efficiency can be suppressed.

The height h60 of the structure 60 may be substantially the same as the height of the light emitting element portion 35. For example, the height h60 of the structure 60 is set to be 0.9 to 1.1 times the height h35 of the light emitting element portion 35. The absolute value of the difference between the height h60 of the structure 60 and the height h35 of the light emitting element portion 35 is 0.2 mm or less. For example, the structure 60 can be formed together with the formation of at least a part of the light emitting element portion 35. This simplifies the manufacturing process. By making the height h60 of the structure 60 substantially the same as the height of the light emitting element portion 35, it becomes easy to form together and the manufacturing process can be simplified.
According to the light emitting device 110 according to the present embodiment, a practical light emitting device with high output can be provided.

  The light emitting device 110 according to the present embodiment is, for example, a COB (Chip On Board) type light emitting device. In a COB type light emitting device, an LED chip (semiconductor light emitting element 20) is mounted on a substrate (wiring board portion 15) on which circuit wiring (first metal layer 11 or the like) is formed. Then, the LED chip is sealed with a sealing resin (for example, the wavelength conversion layer 31).

  In such a light emitting device, heat is generated along with light emission by energization. This heat may be 50% or more of the input electric power, for example. The temperature of the LED chip rises due to heat, and the light emission efficiency of the LED chip decreases. Furthermore, this heat may damage the light-emitting device or may reduce reliability. In recent years, in COB type light emitting devices, in particular, the demand for higher output has increased, the input power has increased, the amount of heat generation has increased rapidly, and the problem of heat has become more serious.

  For this reason, when mounting a light-emitting device in a lighting fixture, a mounting structure is devised and sufficient heat dissipation path | route is ensured. For example, insulating grease is disposed between the back surface of the COB (the lower surface of the wiring board portion 15) and the appliance installation member (heat radiation member 51). This grease eliminates an air layer between the members and improves heat transfer efficiency. By using an insulating and paste-like grease, it is possible to secure an electric withstand voltage and suppress leakage. As described above, depending on the usage situation, this grease spreads and a short circuit occurs in the wiring path.

  On the other hand, by providing the structural body 60, the distance between the circuit wiring and the grease is controlled to a certain level or more. Thereby, a withstand voltage can be ensured and a short circuit can be effectively suppressed.

  As shown in FIG. 1C, in the light emitting device 110, the edge layer 32 may be further provided in the light emitting element portion 35. The edge layer 32 is provided between the wavelength conversion layer 31 and the structure body 60 on the upper surface 15 a of the wiring board portion 15, and surrounds the periphery of the wavelength conversion layer 31 while being in contact with the wavelength conversion layer 31. For the edge layer 32, for example, a white resin having a high light reflectance can be used. The light reflectance of the edge layer 32 is higher than the light reflectance of the wavelength conversion layer 31. A transparent resin may be used for the edge layer 32.

  By providing the edge layer 32, for example, the angle of light emitted from the wavelength conversion layer 31 in the lateral direction (direction along the XY plane) is changed to the upward direction (direction along the Z-axis direction). Thereby, the light extraction efficiency is improved. Furthermore, it is possible to suppress the components (for example, connectors) provided in the region other than the light emitting element portion 35 from being irradiated with light and the components being deteriorated by the light. By providing the edge layer 32, for example, the amount of light applied to the structure 60 can be suppressed. Thereby, it can suppress that the structure 60 deteriorates with light. The edge layer 32 can also function as a dam layer that adjusts its shape when the wavelength conversion layer 31 is formed.

  In the case where the edge layer 32 is provided, the height h35 of the structure 60 is substantially the same as the height of the edge layer 32 (the same as the height h35 of the light emitting element portion 35 in the example shown in FIG. 1C). It may be the same. For example, the height h60 of the structure 60 is not less than 0.9 times and not more than 1.1 times the height of the edge layer 32. For example, the structure 60 and the edge layer 32 may be formed at the same time. By forming the height h35 of the structural body 60 substantially the same as the height of the edge layer 32, these can be easily formed.

FIG. 2A to FIG. 2H are schematic cross-sectional views illustrating the light emitting device according to the first embodiment.
In all these drawings, it is assumed that the semiconductor light emitting element 35 is arranged in the X direction with respect to the structure 60. These drawings show examples of the structure 60.
As shown in FIG. 2A, in the light emitting device 110a, when the structure 60 is cut along a plane parallel to the Z-axis direction, the cross section is rectangular, for example. In this example, it is a rectangle. The height h60 of the structure 60 may be less than the width w60 of the structure 60, may be the same as the width w60, or may exceed the width w60. The width w60 of the structural body 60 is the thickness of the structural body 60 along the direction (radial direction) from the center of the upper surface 15a of the wiring board portion 15 toward the outside of the wiring board portion 15.

  As shown in FIG. 2B, in the light emitting device 110b, the side surface 60s of the structure 60 is inclined with respect to the XY plane (a surface parallel to the upper surface 15a of the wiring board portion 15). ing. In this example, the side surface 60s has a forward tapered shape. The width w60 of the structure 60 may change along the Z-axis direction. At this time, the width w60 of the structure 60 is the maximum value that changes.

  As shown in FIG. 2C and FIG. 2D, in the light emitting devices 110c and 110d, the cross section of the structure 60 is a trapezoid. In the light emitting device 110c, the side surface 60s has a reverse taper shape. In the light emitting device 110d, the side surface 60s has a forward tapered shape.

  As shown in FIG. 2E, in the light emitting device 110e, the corner portion at the top of the structure 60 is a curved surface. As shown in FIG. 2F, in the light emitting device 110f, the side surface 60s of the structure 60 repeats increasing and decreasing along the Z-axis direction and is wavy.

  As shown in FIG. 2G, in the light emitting device 110g, the cross section of the structure 60 is circular (including a flat circle). As shown in FIG. 2H, in the light emitting device 110h, a part of the cross section of the structure 60 is a part of a circle (including a flat circle), and the top of the cross section of the structure 60 is flat. It is.

  The structure 60 can be formed by, for example, a dispenser. When the structure body 60 is provided after the light emitting element section 35 is disposed on the wiring board section 15, the structure body 60 can be easily formed by forming the structure body 60 using a dispenser. When the structure 60 is formed using a dispenser or the like, the shape accuracy of the structure 60 can be improved by designing the top of the structure 60 to be flat like the light emitting device 110h.

  The structure 60 may be formed by any printing method. A photosensitive material may be used as the structure 60. In this case, the structure 60 can be formed by photolithography.

  As in the light emitting devices 110c, 110f, 110g, and 110h, it is more preferable that the side surface 60s is reversely tapered at the portion where the side surface 60s of the structure 60 is in contact with the substrate 10. This portion functions as a place for storing the spread grease layer 52 liquid. Thereby, the grease layer 52 can be blocked more reliably.

  As shown in FIG. 2A, the structure 60 includes a resin 60b. The resin 60b is insulative, for example. By forming the structure 60 with resin, the design freedom of the shape of the structure 60 can be improved.

  The structure 60 may further include a plurality of particles 60a dispersed in the resin 60b. The particles 60a are, for example, insulative. The structure 60 can be made insulative. By using the plurality of particles 60 a for the structure 60, the fluidity of the resin 60 b can be suppressed, and the shape stability of the structure 60 can be improved. Furthermore, for example, the mechanical strength of the structure 60 is improved. Furthermore, the selection range of the material of the resin 60b is expanded, and for example, the chemical stability of the structure 60 is improved. In FIG. 2B to FIG. 2H, the illustration of the particle 60a is omitted.

  For example, silicone or the like can be used for the resin 60b. For example, at least one of titanium oxide, silicon oxide, and alumina can be used for the plurality of particles 60a.

  For example, the reflectance of the plurality of particles 60a with respect to the wavelength of the second light is, for example, 70% or more. More preferably, it is 80 or more. By making the particles 60a light reflective, the light emitted from the light emitting element portion 35 is reflected by the structure 60, and the light extraction efficiency can be improved.

  The structure 60 may be light transmissive. For example, the reflectance of the structure 60 with respect to the wavelength of the second light can be set to 70% or more. For example, it may be 80% or more. In other words, the light absorptivity of the structure 60 is set low. Thereby, deterioration of the structural body 60 due to light emitted from the light emitting element portion 35 can be suppressed.

  In the embodiment, a material used for the substrate 10 may be used as the structure 60. For example, ceramic may be used for the substrate 10 and ceramic may be used for the structure 60. The structure 60 can include the same material as that used for the substrate 10. Thereby, for example, the mechanical strength of the structure 60 can be improved. Resistance to thermal stress and external force can be increased.

  Further, as the structure body 60, a material used for the edge layer 32 may be used. By using the same material, the number of materials can be reduced.

  For example, at least one of the first metal layer 11 and the second metal layer 12 may include a copper layer. Furthermore, a coating layer can be provided on the copper layer. The coating layer can include, for example, at least one of nickel (Ni), aluminum (Al), silver (Ag), gold (Au), palladium (Pd), and rhodium (Rh). An alloy containing any two or more of Ni, Al, Ag, Au, Pd, and Rh may be used for at least one of the first metal layer 11 and the second metal layer 12. At least one of the first metal layer 11 and the second metal layer 12 is laminated with a layer including at least one of a Ni film, an Al film, an Ag film, an Au film, a Pd film, and an Rh film. A stacked film of a conductive layer can be used. High light reflectivity can be obtained in the metal layer.

FIG. 3A and FIG. 3B are schematic plan views illustrating another light emitting device according to the first embodiment.
As shown in FIG. 3A, in another light emitting device 111 according to this embodiment, the structural body 60 is provided discontinuously around the light emitting element portion 35. That is, the structure 60 is divided by a plurality of portions by the thin slit 61.

  The structure 60 only needs to be able to prevent the grease layer 52 that has spread into the region where the light emitting element portion 35 is provided from entering. For this reason, the structure 60 does not necessarily need to continuously surround the light emitting element portion 35, and a gap may be formed by the thin slit 61. Even if the slit 61 is provided, the expanded portion of the grease layer 52 can be sufficiently blocked in the slit 61 by, for example, surface tension.

  For example, the width of the slit 61 (that is, the interval between the portions of the structure 60 divided by the slit 61) is not more than 5 times the width w60 of the structure 60. Thereby, block property is obtained. The light emitting device 111 can also provide a practical light emitting device with high output.

  As shown in FIG. 3B, in another light emitting device 112 according to the present embodiment, a part of the structure 60 is provided along the outer edge 10 r of the substrate 10. For example, the structure 60 has a portion extending along the central portion of each of the four sides of the substrate 10. In such a region (side portion), the distance between the structure 60 and the side of the substrate 10 is substantially constant. And in the corner part of the board | substrate 10, the distance between the structure 60 and the edge | side of the board | substrate 10 is set large. That is, in the corner portion, the structure 60 is formed so as to enter the direction of the semiconductor light emitting element 35, thereby forming a space 62, and the elastic fixing member 55 is disposed in the space 62. The structural body 60 is disposed so that the distance from the elastic fixing member 55 is a certain distance or more.

Thus, the upper surface 15a includes a first region r1 (in this example, the region corresponding to the corner portion) has a second region r2 (in this example, the region corresponding to the side portion) and a. Outer edge 15r of the upper surface 15a in the first region r1 (in this example, corresponds to the outer edge 10r) and a structure 60, the distance between the outer edge of the main surface 15a in the second region r2 15r (outer edge 10r) And the distance between the structures 60 is longer. That is, the structure 60 enters the direction of the semiconductor light emitting element 35. At least a part of the elastic fixing member 55 (for example, one end of the elastic fixing member 55) is disposed on the first region r1.

  Thereby, for example, the tolerance of the error of the fixing work using the elastic fixing member 55 can be expanded. Furthermore, the distance between the outer edge 10r of the substrate 10 and the structure can be reduced at a portion other than the corner portion, while keeping the distance from the elastic fixing member 55 to a certain value or more. Thereby, for example, the spread grease layer 52 can be blocked at a position close to the outer edge 10r of the substrate 10, and higher insulation resistance can be obtained. The light emitting device 112 can also provide a practical light emitting device with high output.

  The light emitting device according to the embodiment can be used as a light source such as a lighting device such as a projector.

  According to the embodiment, a light-emitting device that is practical and reliable with high output is provided.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

The embodiments of the present invention have been described above with reference to specific examples. However, embodiments of the present invention are not limited to these specific examples. For example, the specific configuration of each element such as a heat radiating member, a wiring board part, a grease layer, a light emitting element part, a semiconductor light emitting element, a wavelength conversion layer, and a structure included in the light emitting device is within a publicly known range As long as the present invention can be implemented in the same manner by selecting as appropriate and the same effect can be obtained, it is included in the scope of the present invention.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all light-emitting devices that can be implemented by a person skilled in the art based on the light-emitting device described above as an embodiment of the present invention are also included in the scope of the present invention as long as they include the gist of the present invention. .

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 10 ... Board | substrate, 10a ... 1st main surface, 10b ... 2nd main surface, 10r ... Outer edge, 11 ... 1st metal layer, 11a ... Upper surface, 11e ... 1st electrode part, 11f ... 2nd electrode part, 12 ... 1st 2 metal layers, 12r ... outer edge, 15 ... wiring board part, 15a ... upper surface, 15r ... outer edge, 20 ... semiconductor light emitting element, 21 ... first semiconductor layer, 21a ... first part, 21b ... second part, 21e ... first DESCRIPTION OF SYMBOLS 1 Connection member, 22 ... 2nd semiconductor layer, 22e ... 2nd connection member, 23 ... Light emitting layer, 31 ... Wavelength conversion layer, 32 ... Edge layer, 35 ... Light emitting element part, 35 ... Outer edge, 45 ... 1st connector, 45e ... 1st wiring part, 46 ... 2nd connector, 46e ... 2nd wiring part, 51 ... Heat dissipation member, 52 ... Grease layer, 52a ... Particle, 52b ... Liquid material, 55 ... Elastic fixing member, 56 ... Screw, 60 …Structure, 0a ... Particle, 60b ... Resin, 60s ... Side, 61 ... Slit, 62 ... Space, 110, 110a to 110h, 111, 112 ... Light emitting device, g52 ... Interval, h35 ... Height, h60 ... Height, r1 ... No. 1 region, r2 ... 2nd region, t10 ... thickness, w60 ... width

Claims (8)

A heat dissipating member;
A wiring board provided on the heat dissipation member;
A conductive grease layer provided between the heat dissipation member and the wiring board part;
A semiconductor light emitting device that emits first light and a wavelength conversion layer that absorbs the first light and emits second light having a wavelength different from the wavelength of the first light, provided on the upper surface of the wiring board portion. A light emitting element portion including:
A structure provided around the light emitting element on the upper surface;
Equipped with a,
The wiring board part is
An insulating substrate;
A first metal layer provided between the substrate and the semiconductor light emitting element on the substrate;
First and second connectors electrically connected to the first metal layer on the substrate;
Including
The structure is a light emitting device provided on the upper surface and around the first metal layer and the first and second connectors .   The light emitting device according to claim 1, further comprising an elastic fixing member that limits a change in a relative position between the heat radiating member and the wiring board portion. Before SL upper surface has a first region and a second region, and
And the outer edge of the upper surface in the first region, the distance between the said structure, the outer edge of the main surface in the second region longer than the distance between said structure,
The light emitting device according to claim 2, wherein at least a part of the elastic fixing member is disposed on the first region. 4. The light emitting device according to claim 1, wherein a height of the structure is 0.9 to 1.1 times a height of the light emitting element portion.   The light-emitting device according to claim 1, wherein the grease layer includes a plurality of conductive particles and a liquid material in which the plurality of particles are dispersed. The wiring board unit, according to any one of claims 1 to 5, including a second metal layer which is insulated the so first metal layer and electrically provided between the front Stories substrate and the grease layer Light emitting device. The light emitting element portion further includes an edge layer provided between the wavelength conversion layer and the structure on the upper surface and surrounding the wavelength conversion layer,
The light emitting device according to any one of claims 1 to 6, wherein the height of the structure is 0.9 times to 1.1 times the height of the edge layer.   The light emitting device according to claim 7, wherein the structure includes the same material as that included in the edge layer.

Images