TWI550753B - A temperature control unit, a substrate stage, a substrate processing device, a temperature control system, and a substrate processing method - Google Patents

A temperature control unit, a substrate stage, a substrate processing device, a temperature control system, and a substrate processing method Download PDF

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TWI550753B
TWI550753B TW101126293A TW101126293A TWI550753B TW I550753 B TWI550753 B TW I550753B TW 101126293 A TW101126293 A TW 101126293A TW 101126293 A TW101126293 A TW 101126293A TW I550753 B TWI550753 B TW I550753B
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temperature
substrate
heaters
heater
control unit
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TW101126293A
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TW201308497A (en
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Seiji Tanaka
hideto Yoshiya
Toshimitsu Sakai
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Tokyo Electron Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

Description

溫度控制單元、基板載置台、基板處理裝置、溫度控制系統及基板處理方法 Temperature control unit, substrate mounting table, substrate processing device, temperature control system, and substrate processing method

本發明是有關對基板實施處理溫度不同的複數個熱處理時所使用的溫度控制單元、基板載置台、基板處理裝置、溫度控制系統、及基板處理方法。 The present invention relates to a temperature control unit, a substrate stage, a substrate processing apparatus, a temperature control system, and a substrate processing method which are used when a plurality of heat treatments having different processing temperatures are applied to a substrate.

在FPD(Flat Panel Display),太陽電池或MEMS(Micro Electro Mechanical Systems)的製造過程中,對基板實施各種的熱處理,例如成膜處理。以往,在對基板實施處理溫度不同的複數個熱處理時,每個熱處理不同的基板處理裝置會對基板實施該當的熱處理,但近年來基於生產性提升的觀點,為了使處理能力提升,而被要求在1個的基板處理裝置中實施處理溫度不同的複數個熱處理。 In the FPD (Flat Panel Display), solar cell or MEMS (Micro Electro Mechanical Systems) manufacturing process, various heat treatments such as film formation treatment are performed on the substrate. Conventionally, when a plurality of heat treatments having different processing temperatures are applied to the substrate, the substrate processing apparatus having different heat treatments performs the heat treatment on the substrate. However, in recent years, in order to improve the processing ability, it is required to improve the processing ability. A plurality of heat treatments having different processing temperatures are performed in one substrate processing apparatus.

作為如此的基板處理裝置,有在處理室內具備載置基板的基板載置台,該基板載置台是具備:形成有媒體流路的冷卻套(cooling jacket),及配在該冷卻套下的加熱器之基板處理裝置為人所知(例如參照專利文獻1)。 As such a substrate processing apparatus, there is provided a substrate mounting table on which a substrate is placed in a processing chamber, the substrate mounting table including a cooling jacket in which a media flow path is formed, and a heater disposed under the cooling jacket The substrate processing apparatus is known (for example, refer to Patent Document 1).

在專利文獻1的基板處理裝置是使加熱器發熱來使基板載置台的載置面,具體而言是使冷卻套之與基板的接觸面的溫度上昇,藉此加熱基板,且對冷卻套的媒體流路流動低溫的冷媒來使上述接觸面的溫度下降,藉此冷卻基板。 In the substrate processing apparatus of Patent Document 1, the mounting surface of the substrate mounting table is heated by the heater, specifically, the temperature of the contact surface of the cooling jacket with the substrate is raised, thereby heating the substrate and cooling the substrate. The medium flow path flows a low-temperature refrigerant to lower the temperature of the contact surface, thereby cooling the substrate.

〔先行技術文獻〕 [prior technical literature] 〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本特公平7-105422號公報 [Patent Document 1] Japanese Patent Publication No. 7-105422

然而,在專利文獻1的基板處理裝置,由於冷卻套與加熱器是個別被分開,因此在冷卻套及加熱器之間產生物理性的境界。該境界是例如藉由加熱器來加熱基板時,成為熱阻(Thermal resistance),阻礙來自加熱器的熱往冷卻套傳送,因此會有基板的溫度不會加快變化的間題。 However, in the substrate processing apparatus of Patent Document 1, since the cooling jacket and the heater are separately separated, a physical boundary is created between the cooling jacket and the heater. This boundary is, for example, a thermal resistance when the substrate is heated by a heater, and the heat from the heater is prevented from being transferred to the cooling jacket, so that the temperature of the substrate does not change rapidly.

本發明的目的是在於提供一種可使基板的溫度加快變化之溫度控制單元,基板載置台,基板處理裝置,溫度控制系統,及基板處理方法。 An object of the present invention is to provide a temperature control unit, a substrate mounting table, a substrate processing apparatus, a temperature control system, and a substrate processing method which can rapidly change the temperature of a substrate.

為了達成上述目的,請求項1記載的溫度控制單元,係與基板接觸來控制該基板的溫度之溫度控制單元,其特徵係具備:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,各前述加熱器係彼此平行配置,前述媒體流路係被配置成經過鄰接的2個前述加熱器之間的部分。 In order to achieve the above object, the temperature control unit according to claim 1 is a temperature control unit that is in contact with a substrate to control the temperature of the substrate, and is characterized in that: a plate-shaped body that is in contact with the substrate and is embedded in the temperature control unit. a plurality of linear heaters in the body, and a media flow path of a medium formed in the body and flowing inside the predetermined temperature, wherein the heaters are arranged in parallel with each other, and the media flow path is arranged to be adjacent A portion between two of the aforementioned heaters.

請求項2記載的溫度控制單元,係於請求項1記載的溫度控制單元中,在與前述本體的平面視的1個前述加熱 器垂直的方向,各前述加熱器及前述媒體流路係交替地以等間隔配置。 The temperature control unit according to claim 2 is the one of the above-described heating in a plane view of the main body in the temperature control unit described in claim 1 In the vertical direction of the device, each of the heaters and the media flow path are alternately arranged at equal intervals.

請求項3記載的溫度控制單元,係於請求項1或2記載的溫度控制單元中,在前述本體之與前述基板的接觸面相反側的面,更具備被配置成對應於被埋設在前述本體內的各加熱器的位置之蓋,前述蓋係可開閉。 The temperature control unit according to claim 3 is further provided in the temperature control unit according to claim 1 or 2, wherein the surface of the main body opposite to the contact surface of the substrate is disposed so as to be embedded in the present The cover of the position of each heater in the body can be opened and closed.

請求項4記載的溫度控制單元,係於請求項3記載的溫度控制單元中,前述本體係具有用以安裝前述蓋的螺絲用的螺孔,前述媒體流路係於鄰接的2個前述加熱器之間蛇行成避開前述螺孔。 The temperature control unit according to claim 4 is the temperature control unit according to claim 3, wherein the system has a screw hole for screwing the cover, and the medium flow path is connected to two adjacent heaters. Snakes are made to avoid the aforementioned screw holes.

請求項5記載的溫度控制單元,係於請求項4記載的溫度控制單元中,前述蛇行的媒體流路的曲部之前述本體的平面視的曲率為半徑40mm以上。 The temperature control unit according to claim 5 is the temperature control unit according to claim 4, wherein the curvature of the body of the curved portion of the meandering media flow path has a radius of 40 mm or more.

為了達成上述目的,請求項6記載的基板載置台,係載置基板的基板載置台,其特徵係具備:與前述基板接觸來控制該基板的溫度之溫度控制單元,及支撐該溫度控制單元的基部,前述溫度控制單元係具有:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路, 各前述加熱器係彼此平行配置,前述媒體流路係被配置成經過鄰接的2個前述加熱器之間的部分。 In order to achieve the above object, the substrate mounting table according to claim 6 is a substrate mounting table on which a substrate is placed, and is characterized in that: a temperature control unit that contacts the substrate to control the temperature of the substrate, and a temperature control unit that supports the temperature control unit In the base portion, the temperature control unit includes a plate-shaped body that is in contact with the substrate, and a plurality of linear heaters embedded in the body, and a medium that is formed in the body and flows a predetermined temperature inside. Media stream, Each of the heaters is disposed in parallel with each other, and the media flow path is disposed to pass between a portion of the adjacent two heaters.

為了達成上述目的,請求項7記載的基板處理裝置,係對基板實施處理的基板處理裝置,其特徵係具備:收容前述基板的收容室,及被配置於該收容室內而載置前述基板的基板載置台,前述基板載置台係具有:與前述基板接觸來控制該基板的溫度之溫度控制單元,及支撐該溫度控制單元的基部,前述溫度控制單元係具有:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,各前述加熱器係彼此平行配置,前述媒體流路係被配置成經過鄰接的2個前述加熱器之間的部分。 In the substrate processing apparatus according to the seventh aspect of the invention, the substrate processing apparatus according to the seventh aspect of the invention includes a storage chamber in which the substrate is housed, and a substrate on which the substrate is placed in the storage chamber. In the mounting table, the substrate mounting table has a temperature control unit that contacts the substrate to control the temperature of the substrate, and a base that supports the temperature control unit, wherein the temperature control unit has a plate-shaped body that is in contact with the substrate. And a plurality of linear heaters embedded in the body, and a media flow path of a medium formed in the body and flowing inside the predetermined temperature, wherein the heaters are arranged in parallel with each other, and the media flow path is arranged It is configured to pass through a portion between two adjacent heaters.

為了達成上述目的,請求項8記載的溫度控制系統,係控制基板的溫度之溫度控制系統,其特徵係具備:溫度控制單元,其係具有:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,與前述基板接觸來控制該基板的溫度;加熱器控制單元,其係控制前述加熱器的發熱量;及媒體控制單元,其係控制流動於前述媒體流路的媒體的流量或溫度, 在前述溫度控制單元的前述本體中,各前述加熱器係彼此平行配置,前述媒體流路係被配置成經過鄰接的2個前述加熱器之間的部分。 In order to achieve the above object, the temperature control system according to claim 8 is a temperature control system for controlling the temperature of the substrate, characterized in that the temperature control unit includes a plate-shaped body that is in contact with the substrate, and is embedded. a plurality of linear heaters in the body, and a media flow path of a medium formed in the body and flowing inside the predetermined temperature, and contacting the substrate to control the temperature of the substrate; and a heater control unit Controlling the amount of heat generated by the heater; and a media control unit that controls the flow rate or temperature of the medium flowing through the media flow path, In the above-described body of the temperature control unit, each of the heaters is disposed in parallel with each other, and the media flow path is disposed to pass through a portion between two adjacent heaters.

為了達成上述目的,請求項9記載的基板處理方法,係使用溫度控制單元的基板處理方法,該溫度控制單元係與基板接觸來控制該基板的溫度之溫度控制單元,具備:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,各前述加熱器係彼此平行配置,前述媒體流路係被配置成位於鄰接的2個前述加熱器之間,其特徵為:在將前述基板冷卻至目標冷卻溫度時,往前述媒體流路供給比前述目標冷卻溫度更低的溫度的媒體。 In order to achieve the above object, the substrate processing method according to claim 9 is a substrate processing method using a temperature control unit that controls a temperature control unit that is in contact with a substrate to control the temperature of the substrate, and is provided in contact with the substrate. a plate-shaped body, a plurality of linear heaters embedded in the body, and a media flow path formed by the medium formed in the body and flowing a predetermined temperature inside, and the heaters are arranged in parallel with each other. The media flow path is disposed between the adjacent two heaters, and is characterized in that when the substrate is cooled to a target cooling temperature, a temperature lower than the target cooling temperature is supplied to the media flow path. media.

請求項10記載的基板處理方法,係於請求項9記載的基板處理方法中,當前述溫度控制單元的本體的溫度到達僅比前述目標冷卻溫度高第1預定溫度的第1控制變更溫度時,將往前述媒體流路供給的媒體的溫度變更至前述目標冷卻溫度。 The substrate processing method according to claim 10, wherein, in the substrate processing method of claim 9, when the temperature of the main body of the temperature control unit reaches a first control change temperature that is higher than the target cooling temperature by a first predetermined temperature, The temperature of the medium supplied to the media flow path is changed to the target cooling temperature.

請求項11記載的基板處理方法,係於請求項10記載的基板處理方法中,前述第1預定溫度為2℃以上且未滿20℃。 The substrate processing method according to claim 10, wherein the first predetermined temperature is 2° C. or more and less than 20° C.

請求項12記載的基板處理方法,係於請求項9~11的任一項所記載的基板處理方法中,當前述溫度控制單元 的本體的溫度到達僅比前述目標冷卻溫度高第2預定溫度的第2控制變更溫度時,使前述加熱器發熱,前述第2預定溫度係比前述第1預定溫度更低。 The substrate processing method according to claim 12, wherein the temperature control unit is used in the substrate processing method according to any one of claims 9 to 11. When the temperature of the main body reaches the second control change temperature which is higher than the target cooling temperature by the second predetermined temperature, the heater generates heat, and the second predetermined temperature is lower than the first predetermined temperature.

請求項13記載的基板處理方法,係於請求項12記載的基板處理方法中,前述第2預定溫度為1℃以上且未滿10℃。 The substrate processing method according to claim 12, wherein the second predetermined temperature is 1 ° C or more and less than 10 ° C.

請求項14記載的基板處理方法,係於請求項9~13的任一項所記載的基板處理方法中,在將前述基板加熱至目標加熱溫度時,使前述加熱器發熱,且往前述媒體流路供給比前述目標加熱溫度更高的溫度的媒體。 The substrate processing method according to any one of claims 9 to 13, wherein when the substrate is heated to a target heating temperature, the heater is heated to the media stream. The road supplies a medium having a temperature higher than the aforementioned target heating temperature.

若根據本發明,則在溫度控制單元的本體內不僅媒體流路,還配置有複數的加熱器,因此不會有來自加熱器的熱往本體的傳達受阻的情形。其結果,可使基板的溫度快變化。並且,各加熱器是彼此平行配置,媒體流路是被配置成位於鄰接的2個加熱器之間,因此可提升本體的加熱處及冷卻處的配置的平衡,進而能夠使與本體接觸的基板的溫度安定且均一地變化。 According to the present invention, since not only the media flow path but also a plurality of heaters are disposed in the body of the temperature control unit, there is no possibility that the heat from the heater is blocked from being transmitted to the main body. As a result, the temperature of the substrate can be changed rapidly. Further, since the heaters are arranged in parallel with each other, and the media flow path is disposed between the adjacent two heaters, the balance between the arrangement of the heating portion and the cooling portion of the body can be improved, and the substrate in contact with the body can be made. The temperature is stable and uniform.

又,若根據本發明,則在將基板冷卻至目標冷卻溫度時,因為供給比目標冷卻溫度更低的溫度的媒體至溫度控制單元的本體內的媒體流路,所以可迅速地進行基板的冷卻,進而能夠使基板的溫度快變化。 Further, according to the present invention, when the substrate is cooled to the target cooling temperature, since the medium having a temperature lower than the target cooling temperature is supplied to the medium flow path in the body of the temperature control unit, the substrate can be quickly cooled. Further, the temperature of the substrate can be changed rapidly.

以下,一邊參照圖面一邊說明有關本發明的實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

首先,說明有關本發明的實施形態的基板處理裝置。 First, a substrate processing apparatus according to an embodiment of the present invention will be described.

圖1是概略性地表示本實施形態的基板處理裝置的構成的剖面圖。 Fig. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus of the embodiment.

在圖1中,基板處理裝置10是具備:收容基板的收容室11;配置於該收容室11內的下部來載置基板W的基板載置台12;及在收容室11內的上部配置成與基板載置台12對向之淋浴頭狀的氣體供給部13,對被收容於收容室11的基板W實施成膜處理。 In FIG. 1, the substrate processing apparatus 10 is provided with a storage chamber 11 in which a substrate is housed, a substrate mounting table 12 on which a substrate W is placed in a lower portion of the storage chamber 11, and an upper portion in the storage chamber 11 is disposed in an The substrate supply table 12 faces the shower head-shaped gas supply unit 13 and performs a film forming process on the substrate W housed in the storage chamber 11.

基板載置台12會控制所被載置的基板W的溫度,氣體供給部13會對收容室11內供給處理氣體。在基板處理裝置10,氣體供給部13會供給成膜用的處理氣體,且基板載置台12會將基板W加熱至預定的高溫,藉此對該基板W實施成膜處理。 The substrate stage 12 controls the temperature of the substrate W to be placed, and the gas supply unit 13 supplies the processing gas to the inside of the storage chamber 11. In the substrate processing apparatus 10, the gas supply unit 13 supplies the processing gas for film formation, and the substrate stage 12 heats the substrate W to a predetermined high temperature, thereby performing a film formation process on the substrate W.

基板載置台12是具有:從收容室11的下方立設的基部14,及支撐於該基部14上端的溫度控制單元15。溫度控制單元15是具有:接觸基板W的板狀的單元本體16,及埋設於內部的加熱器17、及形成於同內部的冷卻器流路18(媒體流路),及埋設於同內部的溫度感測器A。單元本體16是由傳熱性高的材料例如鋁所構成,加熱器17是 經由配線20來與外部的加熱器控制器19(加熱器控制單元)連接,從該加熱器控制器19供給電力,藉此發熱。冷卻器流路18是經由配管22來與外部的冷卻器控制器21(媒體控制單元)連接,使冷卻器流路18的內部流動從冷卻器控制器21循環供給的媒體例如Galden®(註冊商標)。 The substrate stage 12 has a base portion 14 that is erected from below the storage chamber 11, and a temperature control unit 15 that is supported at the upper end of the base portion 14. The temperature control unit 15 is a plate-shaped unit main body 16 that contacts the substrate W, a heater 17 that is embedded inside, a cooler flow path 18 (media flow path) that is formed inside, and is embedded in the same interior. Temperature sensor A. The unit body 16 is made of a material having high heat conductivity such as aluminum, and the heater 17 is The external heater controller 19 (heater control unit) is connected via the wiring 20, and electric power is supplied from the heater controller 19 to generate heat. The cooler flow path 18 is connected to an external cooler controller 21 (media control unit) via a pipe 22, and a medium in which the internal flow of the cooler flow path 18 is circulated and supplied from the cooler controller 21, such as Galden® (registered trademark) ).

藉由加熱器17發熱來使單元本體16的溫度上昇而加熱接觸於該單元本體16的基板W,冷卻器流路18是藉由在內部流動低溫的媒體(冷媒)來使單元本體16的溫度下降而冷卻接觸於該單元本體16的基板W。加熱器控制器19、冷卻器控制器21及溫度感測器A是與裝置控制器23連接,裝置控制器23是以埋設於單元本體16的溫度感測器A的溫度能夠收於預定的範圍之方式控制加熱器控制器19及冷卻器控制器21。具體而言,加熱器控制器19是從裝置控制器23接收訊號,按照該訊號來控制供給至加熱器17的電力的供給量或供給時機,冷卻器控制器21也是從裝置控制器23接收訊號,按照該訊號來控制供給至冷卻器流路18的媒體的溫度、供給量或供給時機。 The heater body 17 generates heat to raise the temperature of the unit body 16 to heat the substrate W contacting the unit body 16, and the cooler flow path 18 causes the temperature of the unit body 16 to flow through a low-temperature medium (refrigerant) inside. The substrate W that is in contact with the unit body 16 is cooled while being cooled. The heater controller 19, the cooler controller 21, and the temperature sensor A are connected to the device controller 23, and the device controller 23 is capable of being received in a predetermined range by the temperature of the temperature sensor A embedded in the unit body 16. The heater controller 19 and the cooler controller 21 are controlled in a manner. Specifically, the heater controller 19 receives a signal from the device controller 23, and controls the supply amount or supply timing of the power supplied to the heater 17 in accordance with the signal, and the cooler controller 21 also receives the signal from the device controller 23. The temperature, the supply amount, or the supply timing of the medium supplied to the cooler flow path 18 is controlled in accordance with the signal.

圖2是概略性地表示圖1的溫度控制單元的構成圖,圖2(A)是水平剖面圖,圖2(B)是縱剖面圖,圖2(C)是底面圖。 Fig. 2 is a view schematically showing a configuration of a temperature control unit of Fig. 1. Fig. 2(A) is a horizontal sectional view, Fig. 2(B) is a longitudinal sectional view, and Fig. 2(C) is a bottom view.

在圖2中,在溫度控制單元15的單元本體16的內部是埋設有溫度感測器A,且6根直線狀的加熱器17是彼此平行配置。埋設溫度感測器A的位置是剖面視最好接近 與基板W的接觸面16a之處(參照圖2(B)),底面視最好中央部(參照圖2(C)),但並未特別加以特定。各加熱器17是分別藉由連接3個加熱器17的2條電線20來分成平面視呈E字狀的2組。各組是E字的開放端彼此間對向,配置成在一方的組中鄰接的2個加熱器17之間存在另一方的組的1個加熱器17。 In FIG. 2, inside the unit body 16 of the temperature control unit 15, a temperature sensor A is embedded, and six linear heaters 17 are arranged in parallel with each other. The position of the buried temperature sensor A is the best view of the section The bottom surface is preferably the center portion (see Fig. 2(C)) where it is in contact with the substrate W (see Fig. 2(B)), but it is not particularly specified. Each of the heaters 17 is divided into two groups of E-shaped in plan view by two electric wires 20 that connect the three heaters 17. Each group has an open end of the E-shape opposed to each other, and is arranged such that one heater 17 of the other group exists between two heaters 17 adjacent to one group.

並且,在單元本體16的內部形成有1條的冷卻器流路18。冷卻器流路18是平面視,以在鄰接的2個加熱器17之間離兩加熱器17等距離位置的方式經過兩加熱器17之間的部分,且在各加熱器17的端部配置成擁有彎曲部。而且,在單元本體16中,各加熱器17及冷卻器流路18是在與平面視的1個加熱器17垂直的方向D交替等間隔配置(圖2(A))。 Further, one cooler flow path 18 is formed inside the unit body 16. The cooler flow path 18 is a plan view and passes through a portion between the two heaters 17 so as to be equidistant from the two heaters 17 between the adjacent two heaters 17, and is disposed at the end of each heater 17. It has a curved part. Further, in the unit main body 16, each heater 17 and the cooler flow path 18 are alternately arranged at equal intervals in a direction D perpendicular to one heater 17 in plan view (FIG. 2(A)).

在單元本體16之與基板W的接觸面16a相反側的背面16b,以對應於單元本體16所埋設的各加熱器17的組之方式設有呈E字狀的維修用的蓋24,25。單元本體16是具有用以將維修用的蓋24及25安裝至該單元本體16的安裝螺絲用的螺孔26。另外,如圖2(A)所示,在本實施形態是對1個加熱器17設有2個螺孔26,但螺孔26的數量並無特別加以限定。 On the back surface 16b of the unit main body 16 on the side opposite to the contact surface 16a of the substrate W, the E-shaped maintenance covers 24, 25 are provided so as to correspond to the groups of the heaters 17 embedded in the unit main body 16. The unit body 16 is a screw hole 26 for mounting screws for mounting the maintenance covers 24 and 25 to the unit body 16. Further, as shown in FIG. 2(A), in the present embodiment, two screw holes 26 are provided for one heater 17, but the number of the screw holes 26 is not particularly limited.

在溫度控制單元15,當溫度感測器A故障時,或某加熱器17斷線時,卸下單元本體16,且卸下安裝螺絲,藉此打開背面的維修用的蓋24或25,更換故障的溫度感測器A或斷線的加熱器17。 In the temperature control unit 15, when the temperature sensor A fails, or when a certain heater 17 is disconnected, the unit body 16 is removed, and the mounting screws are removed, thereby opening the rear maintenance cover 24 or 25, and replacing Faulty temperature sensor A or disconnected heater 17.

若根據圖2的溫度控制單元15,則在單元本體16內不僅冷卻器流路18,還配置有複數的加熱器17,因此在將加熱器17及冷卻器流路18作為個別的單元設置時所產生加熱器17及冷卻器流路18之間的境界部不會存在,無該境界部所造成的熱阻,因此不會有來自加熱器17的熱往單元本體16的傳達受阻的情形。並且,在單元本體16內埋設有溫度感測器A,因此可精度佳地測定單元本體16的溫度。其結果,可使基板W的溫度快變化。 According to the temperature control unit 15 of Fig. 2, not only the cooler flow path 18 but also a plurality of heaters 17 are disposed in the unit main body 16, so that when the heater 17 and the cooler flow path 18 are provided as individual units, The boundary between the generated heater 17 and the cooler flow path 18 does not exist, and there is no thermal resistance caused by the boundary portion, so that the heat from the heater 17 to the unit body 16 is not hindered. Further, since the temperature sensor A is embedded in the unit body 16, the temperature of the unit body 16 can be accurately measured. As a result, the temperature of the substrate W can be changed rapidly.

並且,在溫度控制單元15中,各加熱器17是彼此平行配置,冷卻器流路18是被配置成經過鄰接的2個加熱器17之間的部分,且在與單元本體16的平面視的1個加熱器17垂直的方向D,各加熱器17及冷卻器流路18是交替地以等間隔配置,因此可使單元本體16的加熱處及冷卻處的配置的平衡提升。其結果,可使與單元本體16接觸的基板W的溫度安定且均一地變化。 Further, in the temperature control unit 15, each of the heaters 17 is disposed in parallel with each other, and the cooler flow path 18 is a portion that is disposed between the adjacent two heaters 17, and is in a plane view from the unit body 16. Since the heaters 17 are perpendicular to the direction D, and the heaters 17 and the cooler channels 18 are alternately arranged at equal intervals, the balance between the arrangement of the heating portion and the cooling portion of the unit body 16 can be improved. As a result, the temperature of the substrate W that is in contact with the unit body 16 can be stabilized and uniformly changed.

並且,藉由將監視單元本體16的溫度之溫度感測器A埋設於儘可能靠近與基板W的接觸面16a的位置,可縮小基板W與藉由溫度感測器A所測定的單元本體16之間的溫度梯度,因此可精度佳地控制基板W的溫度。 Further, by embedding the temperature sensor A of the temperature of the monitoring unit body 16 as close as possible to the contact surface 16a of the substrate W, the substrate W and the unit body 16 measured by the temperature sensor A can be reduced. The temperature gradient between them makes it possible to precisely control the temperature of the substrate W.

並且,溫度控制單元15是在單元本體16的背面16b更具備被配置成對應於各加熱器17的位置之可開閉的維修用的蓋24,25,因此即使溫度感測器A或加熱器17損壞,還是可更換該加熱器17,進而能夠降低溫度控制單元15的運行成本。又,由於維修用的蓋24、25不是被配置 於單元本體16的接觸面16a而是背面16b,因此不會有維修用的蓋24、25與單元本體16之間的境界成為熱阻而阻礙加熱器17之基板W的加熱或流動於冷卻器流路18的內部的冷媒之基板W的冷卻,進而能夠使基板W的溫度更快變化。 Further, the temperature control unit 15 further includes an openable and closable cover 24, 25 disposed on the rear surface 16b of the unit main body 16 so as to correspond to the position of each heater 17, so that even the temperature sensor A or the heater 17 Damage or replacement of the heater 17 can further reduce the operating cost of the temperature control unit 15. Also, since the maintenance covers 24, 25 are not configured The contact surface 16a of the unit body 16 is the back surface 16b, so that the boundary between the maintenance covers 24, 25 and the unit body 16 does not become a thermal resistance and hinders the heating or flow of the substrate W of the heater 17 to the cooler. The cooling of the substrate W of the refrigerant inside the flow path 18 can further change the temperature of the substrate W more quickly.

另外,在本實施形態中是說明加熱器17為彼此平行的直線狀的加熱器,但亦可配合進行熱交換的區域的形狀,將同形狀之曲線狀的加熱器配置成彼此間的距離會形成一定。此情況,曲線狀的加熱器,例如亦可為以圓弧狀的曲線或放物線狀的曲線所構成的加熱器,且亦可為一面指向一方向一面蛇行的曲線狀的加熱器。在蛇行的加熱器時,鄰接的加熱器亦可為彼此成為鏡面對稱的形狀或平行移動的形狀。 Further, in the present embodiment, the heaters 17 are linear heaters which are parallel to each other. However, the shape of the region in which the heat exchange is performed may be arranged, and the curved heaters of the same shape may be arranged at a distance therebetween. Form a certain. In this case, the curved heater may be, for example, a heater formed by an arc-shaped curve or a linear curve, or may be a curved heater that is meandered in one direction. In the case of a snake heater, the adjacent heaters may be in a shape that is mirror-symmetrical to each other or a shape that moves in parallel.

而且,在本實施形態中,冷卻器流路18是說明由一條的流路所構成的一系統的流路,但亦可構成為由二條或以上的流路所構成的複數系統的流路。一條的流路是在上游及下游之間容易產生溫度差,但若以複數的流路來構成,則一系統的流路會變短,因此可縮小上游及下游之間的溫度差,可緩和在單元本體16的面內之熱交換的不均一。 Further, in the present embodiment, the cooler flow path 18 is a flow path for describing one system constituted by one flow path, but may be configured as a flow path of a complex system composed of two or more flow paths. One flow path is likely to have a temperature difference between the upstream and downstream, but if it is constituted by a plurality of flow paths, the flow path of one system becomes short, so that the temperature difference between the upstream and the downstream can be reduced, and the temperature difference can be alleviated. The heat exchange in the plane of the unit body 16 is not uniform.

圖3是概略性地表示圖1的溫度控制單元的變形例的構成圖,圖3(A)是水平剖面圖,圖3(B)是縱剖面圖,圖3(C)是底面圖。本變形例是加熱器的數量及冷卻器的形狀與圖2的溫度控制單元15不同。 Fig. 3 is a structural view schematically showing a modification of the temperature control unit of Fig. 1. Fig. 3(A) is a horizontal sectional view, Fig. 3(B) is a longitudinal sectional view, and Fig. 3(C) is a bottom view. In the present modification, the number of heaters and the shape of the cooler are different from those of the temperature control unit 15 of Fig. 2 .

可是,為了確保各螺孔26的機能,例如鎖緊力的發揮或對鎖緊力的耐性,須要離加熱器17或冷卻器流路18一定的距離以上來配置各螺孔26。其結果,加熱器17或冷卻器流路18的配置場所是被螺孔26的配置場所所左右。具體而言,在圖2的溫度控制單元15中,加熱器17或冷卻器流路18是被形成直線狀,因此若考慮各螺孔26的配置場所,則無法使各加熱器17及冷卻器流路18某一定以上靠近,可配置的加熱器17的數量會被限制,且媒體流路18也無法細彎,因此恐有單元本體16的面內的溫度分布成為不均一之虞。對於此,圖3的溫度控制單元27是在鄰接的2個加熱器17之間以能夠避開安裝螺絲用的螺孔26之方式使冷卻器流路18蛇行。藉此,只要在冷卻器流路18的各曲部18a的內側配置各螺孔26,便可從各螺孔26到冷卻器流路18確保一定的距離,且可使與該曲部18a鄰接的曲部18b往加熱器17靠近。藉此,可使各加熱器17及冷卻器流路18比圖2的溫度控制單元15的加熱器17及冷卻器流路18更靠近。其結果,可在單元本體16中配置更多的加熱器17,且可使冷卻器流路18更細彎,因此可使單元本體16的面內的溫度均一性提升。例如,在圖3的溫度控制單元27中可配置8個的加熱器17。 However, in order to ensure the function of each of the screw holes 26, for example, the exertion of the locking force or the resistance to the locking force, it is necessary to arrange the screw holes 26 at a certain distance or more from the heater 17 or the cooler flow path 18. As a result, the arrangement place of the heater 17 or the cooler flow path 18 is left and right by the arrangement place of the screw holes 26. Specifically, in the temperature control unit 15 of FIG. 2, since the heater 17 or the cooler flow path 18 is formed in a linear shape, the heaters 17 and the coolers cannot be made in consideration of the arrangement positions of the screw holes 26. When the flow path 18 is closer to a certain extent, the number of configurable heaters 17 is limited, and the media flow path 18 cannot be bent, so that the temperature distribution in the plane of the unit body 16 may become uneven. In this regard, the temperature control unit 27 of FIG. 3 causes the cooler flow path 18 to meander between the adjacent two heaters 17 so as to be able to avoid the screw holes 26 for mounting screws. Thereby, by arranging the screw holes 26 inside the curved portions 18a of the cooler flow path 18, a certain distance can be secured from each of the screw holes 26 to the cooler flow path 18, and the adjacent curved portion 18a can be adjacent to the curved portion 18a. The curved portion 18b approaches the heater 17. Thereby, each of the heaters 17 and the cooler flow path 18 can be brought closer to the heater 17 and the cooler flow path 18 of the temperature control unit 15 of Fig. 2 . As a result, more heaters 17 can be disposed in the unit body 16, and the cooler flow path 18 can be made finer, so that the temperature uniformity in the plane of the unit body 16 can be improved. For example, eight heaters 17 can be arranged in the temperature control unit 27 of FIG.

並且,在溫度控制單元27中,蛇行的冷卻器流路18之單元本體16的平面視的曲率會被設定成半徑40mm以上。藉此,不會有冷卻器流路18的電導極端降低的情 形,因此不會有流動於冷卻器流路18內的媒體的壓損發生的情形,可防止媒體的供給效率降低。 Further, in the temperature control unit 27, the curvature of the unit body 16 of the meandering cooler flow path 18 is set to have a radius of 40 mm or more. Thereby, there is no extreme decrease in the conductance of the cooler flow path 18. Since the pressure loss of the medium flowing in the cooler flow path 18 does not occur, the supply efficiency of the medium can be prevented from being lowered.

另外,在本變形例中是使冷卻器流路18蛇行來迴避螺孔26,但亦可不是冷卻器流路18,而是使加熱器17蛇行來迴避螺孔26。 Further, in the present modification, the cooler flow path 18 is snaked back and forth to avoid the screw hole 26. However, the heater 17 may not be circumvented to avoid the screw hole 26, instead of the cooler flow path 18.

其次,說明有關本發明的實施形態的基板處理方法。本實施形態的基板處理方法是在具備溫度控制單元15的基板處理裝置10中由裝置控制器23實行。另外,本實施形態的基板處理方法是以單元本體16的溫度替代基板W的溫度,藉由加熱器17或冷卻器流路18來控制單元本體16的溫度。 Next, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method of the present embodiment is executed by the device controller 23 in the substrate processing apparatus 10 including the temperature control unit 15. Further, in the substrate processing method of the present embodiment, the temperature of the unit body 16 is used instead of the temperature of the substrate W, and the temperature of the unit body 16 is controlled by the heater 17 or the cooler flow path 18.

圖4是表示本實施形態的基板處理方法的基板的冷卻時的各部溫度的順序圖。 4 is a sequence diagram showing temperatures of respective portions during cooling of the substrate in the substrate processing method of the embodiment.

在圖4中,一旦開始冷卻至例如250℃的基板W的目標冷卻溫度,例如120℃,則加熱器控制器19停止往加熱器17的電力供給,冷卻器控制器21係使往冷卻器流路18供給的媒體的溫度降低至比目標冷卻溫度更低的溫度之冷卻用溫度,例如80℃。然後,一旦單元本體16藉由冷卻用溫度的媒體來冷卻而到達僅比目標冷卻溫度高2℃以上且未滿20℃的預定溫度(第1預定溫度)之溫度(第1控制變更溫度),例如130℃,則冷卻器控制器21係將往冷卻器流路18供給的媒體的溫度變更至目標冷卻溫度,使降溫速度降低,而緩和單元本體16的降溫程度。 In FIG. 4, once the cooling to the target cooling temperature of the substrate W of, for example, 250 ° C, for example, 120 ° C, is started, the heater controller 19 stops the supply of electric power to the heater 17, and the cooler controller 21 causes the flow to the cooler. The temperature of the medium supplied by the path 18 is lowered to a cooling temperature lower than the target cooling temperature, for example, 80 °C. Then, once the unit body 16 is cooled by the medium for cooling, it reaches a temperature (first control change temperature) which is only 2 ° C or more higher than the target cooling temperature and less than 20 ° C (first predetermined temperature). For example, at 130 ° C, the cooler controller 21 changes the temperature of the medium supplied to the cooler flow path 18 to the target cooling temperature, lowers the temperature drop rate, and moderates the temperature drop of the unit body 16.

若根據本實施形態的基板處理方法,則在將基板W 冷卻至目標冷卻溫度時,由於對冷卻器流路18供給比目標冷卻溫度更低的溫度(冷卻用溫度)的媒體,因此可迅速地進行基板W的冷卻,進而能夠使基板W的溫度快變化。 According to the substrate processing method of the present embodiment, the substrate W is When cooling to the target cooling temperature, the medium of the temperature (cooling temperature) lower than the target cooling temperature is supplied to the cooler flow path 18, so that the cooling of the substrate W can be quickly performed, and the temperature of the substrate W can be quickly changed. .

並且,本實施形態的基板處理方法是當單元本體16的溫度到達比目標冷卻溫度更高的第1控制變更溫度時,會將被供給至冷卻器流路18的媒體的溫度變更至目標冷卻溫度,因此不會有單元本體16過度被冷卻的情形,進而能夠防止單元本體16的溫度低於目標冷卻溫度。 Further, in the substrate processing method of the present embodiment, when the temperature of the unit body 16 reaches the first control change temperature higher than the target cooling temperature, the temperature of the medium supplied to the cooler flow path 18 is changed to the target cooling temperature. Therefore, there is no case where the unit body 16 is excessively cooled, and thus it is possible to prevent the temperature of the unit body 16 from being lower than the target cooling temperature.

上述本實施形態的基板處理方法是一旦往加熱器17的電力供給被停止,則之後電力的供給是不被恢復,但亦可意圖性地再開始電力的供給。 In the substrate processing method according to the above-described embodiment, when the supply of electric power to the heater 17 is stopped, the supply of electric power is not restored, but the supply of electric power can be restarted intentionally.

圖5是表示本實施形態的基板處理方法的變形例的基板的冷卻時的各部溫度的順序圖。 FIG. 5 is a sequence diagram showing temperatures of respective portions during cooling of the substrate in a modification of the substrate processing method according to the embodiment.

在圖5中,一旦開始基板W的冷卻,則加熱器控制器19停止往加熱器17的電力供給,冷卻器控制器21係使往冷卻器流路18供給的媒體的溫度降低至冷卻用溫度,一旦單元本體16被冷卻而到達第1控制變更溫度,則冷卻器控制器21係將往冷卻器流路18供給的媒體的溫度變更至目標冷卻溫度。 In FIG. 5, once the cooling of the substrate W is started, the heater controller 19 stops the supply of electric power to the heater 17, and the cooler controller 21 lowers the temperature of the medium supplied to the cooler flow path 18 to the cooling temperature. When the unit body 16 is cooled and reaches the first control change temperature, the cooler controller 21 changes the temperature of the medium supplied to the cooler flow path 18 to the target cooling temperature.

之後,一旦單元本體16再被冷卻而到達僅比目標冷卻溫度高1℃以上且未滿10℃的預定溫度(第2預定溫度)之溫度(第2控制變更溫度),例如125℃,則加熱器控制器19恢復往加熱器17的電力供給。藉此,將媒體 的溫度變更至目標冷卻溫度之後,即使單元本體16的降溫速度未下降成期待的程度,還是可藉由加熱單元本體16來緩和單元本體16的降溫速度,進而能夠確實地防止單元本體16的溫度低於目標冷卻溫度。 Thereafter, once the unit body 16 is cooled again and reaches a temperature (second control change temperature) of a predetermined temperature (second predetermined temperature) which is only 1 ° C or more and less than 10 ° C higher than the target cooling temperature, for example, 125 ° C, heating is performed. The controller 19 restores the power supply to the heater 17. In this way, the media will be After the temperature of the unit body 16 is changed to the target cooling temperature, even if the temperature drop rate of the unit body 16 does not fall to a desired level, the temperature of the unit body 16 can be moderated by the heating unit body 16, and the temperature of the unit body 16 can be reliably prevented. Below the target cooling temperature.

又,本實施形態的基板處理方法是在基板W的加熱時亦可使往冷卻器流路18供給的媒體的溫度變更。 Further, in the substrate processing method of the present embodiment, the temperature of the medium supplied to the cooler flow path 18 can be changed during heating of the substrate W.

圖6是表示本實施形態的基板處理方法的基板的加熱時的各部溫度的順序圖。 FIG. 6 is a sequence diagram showing temperatures of respective portions during heating of the substrate in the substrate processing method of the embodiment.

在圖6中,一旦開始加熱至例如60℃的基板W的目標加熱溫度,例如250℃,則加熱器控制器19開始往加熱器17的電力供給,冷卻器控制器21係使往冷卻器流路18供給的媒體的溫度上昇至比目標加熱溫度更高的溫度之加熱用溫度,例如280℃。然後,一旦單元本體16被加熱而到達僅比目標加熱溫度低2℃以上且未滿20℃的預定溫度之溫度(第3控制變更溫度),例如240℃,則冷卻器控制器21係將往冷卻器流路18供給的媒體的溫度變更至目標加熱溫度。 In Fig. 6, once heating to a target heating temperature of the substrate W of, for example, 60 ° C, for example, 250 ° C, the heater controller 19 starts power supply to the heater 17, and the cooler controller 21 causes the cooler to flow. The temperature of the medium supplied from the path 18 rises to a temperature higher than the target heating temperature, for example, 280 °C. Then, once the unit body 16 is heated to reach a temperature (third control change temperature) of only a predetermined temperature lower than the target heating temperature by 2 ° C or more and less than 20 ° C, for example, 240 ° C, the cooler controller 21 is going to The temperature of the medium supplied from the cooler flow path 18 is changed to the target heating temperature.

上述的基板處理方法是在將基板W加熱至目標加熱溫度時,往冷卻器流路18供給比目標加熱溫度更高的溫度(加熱用溫度)的媒體,因此可迅速地進行基板W的加熱,進而能夠使基板W的溫度加快變化。 In the above-described substrate processing method, when the substrate W is heated to the target heating temperature, a medium having a temperature higher than the target heating temperature (heating temperature) is supplied to the cooler flow path 18, so that the substrate W can be quickly heated. Further, the temperature of the substrate W can be changed to be faster.

並且,上述的基板處理方法是當單元本體16的溫度到達比目標加熱溫度更低的第3控制變更溫度時,將往冷卻器流路18供給的媒體的溫度變更至目標加熱溫度,因 此不會有單元本體16被過度加熱的情形,進而能夠防止單元本體16的溫度高於目標加熱溫度。 Further, in the substrate processing method described above, when the temperature of the unit main body 16 reaches a third control change temperature lower than the target heating temperature, the temperature of the medium supplied to the cooler flow path 18 is changed to the target heating temperature. This does not allow the unit body 16 to be overheated, thereby preventing the temperature of the unit body 16 from being higher than the target heating temperature.

上述的基板處理方法是一旦往加熱器17的電力供給開始,則之後電力的供給不被停止,但亦可意圖性地停止電力的供給。 In the above-described substrate processing method, when the supply of electric power to the heater 17 is started, the supply of electric power is not stopped, but the supply of electric power can be intentionally stopped.

圖7是表示本實施形態的基板處理方法的變形例的基板的加熱時的各部溫度的順序圖。 FIG. 7 is a sequence diagram showing temperatures of respective portions during heating of the substrate in a modification of the substrate processing method according to the embodiment.

在圖7中,一旦開始基板W的加熱,則加熱器控制器19開始往加熱器17供給電力,冷卻器控制器21係使往冷卻器流路18供給的媒體的溫度上昇至加熱用溫度,一旦單元本體16被加熱而到達第3控制變更溫度,則冷卻器控制器21係將往冷卻器流路18供給的媒體的溫度變更至目標加熱溫度。 In FIG. 7, when heating of the substrate W is started, the heater controller 19 starts supplying electric power to the heater 17, and the cooler controller 21 raises the temperature of the medium supplied to the cooler flow path 18 to the heating temperature. When the unit body 16 is heated to reach the third control change temperature, the cooler controller 21 changes the temperature of the medium supplied to the cooler flow path 18 to the target heating temperature.

然後,一旦單元本體16再被加熱而到達僅比目標加熱溫度低1℃以上且未滿10℃的預定溫度之溫度(第4控制變更溫度),例如245℃,則加熱器控制器19停止往加熱器17的電力供給。藉此,將媒體的溫度變更至目標加熱溫度之後,即使單元本體16的昇溫速度未下降成期待的程度,還是可藉由停止加熱器17的發熱來急劇地減少往單元本體16的熱供給量而緩和單元本體16的昇溫速度,進而能夠確實地防止單元本體16的溫度高於目標加熱溫度。 Then, once the unit body 16 is heated again to reach a temperature (fourth control change temperature) of only a predetermined temperature lower than the target heating temperature by 1 ° C or more and less than 10 ° C, for example, 245 ° C, the heater controller 19 stops The power supply of the heater 17 is supplied. By this, after the temperature of the medium is changed to the target heating temperature, even if the temperature increase rate of the unit main body 16 does not fall to a desired level, the amount of heat supplied to the unit main body 16 can be drastically reduced by stopping the heat generation of the heater 17. Further, by easing the temperature increase rate of the unit body 16, it is possible to surely prevent the temperature of the unit body 16 from being higher than the target heating temperature.

另外,實行本實施形態的基板處理方法之基板處理裝置10的基板載置台12的溫度控制單元15是如上述般, 在單元本體16內不僅冷卻器流路18還配置有複數的加熱器17及溫度感測器A,單元本體16的溫度藉由溫度感測器A來監視在冷卻器流路18的內部流動的媒體的溫度或加熱器17的溫度,藉此可精度佳地實行圖6或圖7所示那樣併用加熱器17的加熱及冷卻器流路18的加熱之基板處理方法。 Further, the temperature control unit 15 of the substrate stage 12 of the substrate processing apparatus 10 that performs the substrate processing method of the present embodiment is as described above. In the unit body 16, not only the cooler flow path 18 but also a plurality of heaters 17 and a temperature sensor A are disposed, and the temperature of the unit body 16 is monitored by the temperature sensor A to flow inside the cooler flow path 18. The temperature of the medium or the temperature of the heater 17 can accurately perform the substrate processing method using the heating of the heater 17 and the heating of the cooler flow path 18 as shown in Fig. 6 or Fig. 7 .

上述本實施形態的基板處理方法是適用於處理溫度不同的複數個成膜處理之間的基板W的溫度調整,但實行該基板處理方法時的收容室11內的壓力並無特別加以限定,大氣壓乃至真空皆可。 The substrate processing method according to the present embodiment is applied to temperature adjustment of the substrate W between a plurality of film formation processes having different processing temperatures. However, the pressure in the storage chamber 11 when the substrate processing method is performed is not particularly limited, and the atmospheric pressure is not limited. It can be vacuumed.

又,上述的本實施形態是說明有關進行成膜處理時,但可適用本發明的處理只要是須要迅速的溫度變化的處理即可,並不限於上述的成膜處理。 Further, in the above-described embodiment, the film forming process is described. However, the process to which the present invention is applicable is not particularly limited to the above-described film forming process as long as it requires a rapid temperature change.

又,上述本實施形態的基板處理方法是由裝置控制器23來實行,但亦可由經由網路來與基板處理裝置10連接的外部伺服器(未圖示)控制加熱器控制器19或冷卻器控制器21的動作來實行。 Further, although the substrate processing method according to the above embodiment is executed by the device controller 23, the heater controller 19 or the cooler may be controlled by an external server (not shown) connected to the substrate processing apparatus 10 via the network. The operation of the controller 21 is carried out.

又,被供給至冷卻器流路18的媒體並非限於Galden®,例如可使用油系的媒體之矽油。 Further, the medium supplied to the cooler flow path 18 is not limited to Galden®, and for example, an oil-based medium can be used.

以上,利用上述實施形態來說明有關本發明,但本發明並非限於上述實施形態。 Although the present invention has been described above using the above embodiments, the present invention is not limited to the above embodiments.

本發明的目的亦可藉由將記錄實現上述實施形態的機能的軟體程式之記憶媒體供應給電腦等,電腦的CPU讀出儲存於記憶媒體的程式來執行而達成。 It is also an object of the present invention to provide a memory medium for recording a software program that realizes the functions of the above-described embodiments to a computer or the like, and the CPU of the computer reads the program stored in the memory medium and executes it.

此情況,從記憶媒體讀出的程式本身會實現上述實施形態的機能,程式及記憶該程式的記憶媒體是構成本發明。 In this case, the program itself read from the memory medium realizes the functions of the above embodiment, and the program and the memory medium for storing the program constitute the present invention.

並且,用以供給程式的記憶媒體是例如可為RAM、NV-RAM、軟碟(floppy)(註冊商標)、硬碟、光磁碟、CD-ROM、CD-R、CD-RW、DVD(DVD-ROM、DVD-RAM、DVD-RW、DVD+RW)等的光碟、磁帶、非揮發性的記憶卡、及其他的ROM等記憶上述程式者。或者,上述程式亦可從連接至網際網路、商用網路、或局部區域網路等之未圖示的其他電腦或資料庫等來下載而供應給電腦。 Further, the memory medium for supplying the program is, for example, RAM, NV-RAM, floppy (registered trademark), hard disk, optical disk, CD-ROM, CD-R, CD-RW, DVD ( A disc, a magnetic tape, a non-volatile memory card, and other ROMs such as a DVD-ROM, a DVD-RAM, a DVD-RW, and a DVD+RW are used to store the above programs. Alternatively, the program may be downloaded and supplied to a computer from another computer or database (not shown) connected to the Internet, a commercial network, or a local area network.

而且,藉由執行電腦的CPU所讀出的程式,不僅上述實施形態的機能會被實現,且亦包含在CPU上運作的OS(操作系統)等會根據該程式的指示來進行實際的處理的一部分或全部,藉由該處理來實現上述實施形態的機能時。 Further, by executing the program read by the CPU of the computer, not only the functions of the above-described embodiments but also the OS (operating system) operating on the CPU are actually processed according to the instructions of the program. Some or all of the functions of the above embodiment are realized by this processing.

甚至,亦包含從記憶媒體讀出的程式在被寫入至插入電腦的機能擴充板或連接至電腦的機能擴充單元所具備的記憶體之後,該機能擴充板或機能擴充單元所具備的CPU等會根據該程式的指示來進行實際的處理的一部分或全部,藉由該處理來實現上述實施形態的機能時。 It also includes the CPU of the function expansion board or the function expansion unit after the program read from the memory medium is written to the memory expansion unit of the computer or the memory expansion unit connected to the computer. Some or all of the actual processing is performed in accordance with the instruction of the program, and the function of the above embodiment is realized by the processing.

上述程式的形態亦可由物件程式碼(Object Code)、藉由直譯器(interpreter)所執行的程式、被供給至OS的劇本資料(script data)等的形態所構成。 The form of the above program may be constituted by an object code (Object Code), a program executed by an interpreter, or a script data supplied to the OS.

A‧‧‧溫度感測器 A‧‧‧Temperature Sensor

10‧‧‧基板處理裝置 10‧‧‧Substrate processing unit

12‧‧‧基板載置台 12‧‧‧Substrate mounting table

15,27‧‧‧溫度控制單元 15,27‧‧‧temperature control unit

16‧‧‧單元本體 16‧‧‧ Unit Ontology

17‧‧‧加熱器 17‧‧‧heater

18‧‧‧冷卻器流路 18‧‧‧ cooler flow path

19‧‧‧加熱器控制器 19‧‧‧heater controller

21‧‧‧冷卻器控制器 21‧‧‧cooler controller

24,25‧‧‧維修用的蓋 24,25‧‧‧ Cover for maintenance

26‧‧‧螺孔 26‧‧‧ screw holes

圖1是概略性地表示本發明的實施形態的基板處理裝置的構成的剖面圖。 FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.

圖2是概略性地表示圖1的溫度控制單元的構成圖,圖2(A)是水平剖面圖,圖2(B)是縱剖面圖,圖2(C)是底面圖。 Fig. 2 is a view schematically showing a configuration of a temperature control unit of Fig. 1. Fig. 2(A) is a horizontal sectional view, Fig. 2(B) is a longitudinal sectional view, and Fig. 2(C) is a bottom view.

圖3是概略性地表示圖1的溫度控制單元的變形例的構成圖,圖3(A)是水平剖面圖,圖3(B)是縱剖面圖,圖3(C)是底面圖。 Fig. 3 is a structural view schematically showing a modification of the temperature control unit of Fig. 1. Fig. 3(A) is a horizontal sectional view, Fig. 3(B) is a longitudinal sectional view, and Fig. 3(C) is a bottom view.

圖4是本發明的實施形態的基板處理方法的基板的冷卻時的各部溫度的順序圖。 4 is a sequence diagram showing temperatures of respective portions during cooling of the substrate in the substrate processing method according to the embodiment of the present invention.

圖5是表示本發明的實施形態的基板處理方法的變形例的基板的冷卻時的各部溫度的順序圖。 FIG. 5 is a sequence diagram showing temperatures of respective portions during cooling of the substrate in a modification of the substrate processing method according to the embodiment of the present invention.

圖6是表示本發明的實施形態的基板處理方法的基板的加熱時的各部溫度的順序圖。 FIG. 6 is a sequence diagram showing temperatures of respective portions during heating of the substrate in the substrate processing method according to the embodiment of the present invention.

圖7是表示本發明的實施形態的基板處理方法的變形例的基板的加熱時的各部溫度的順序圖。 FIG. 7 is a sequence diagram showing temperatures of respective portions during heating of the substrate in a modification of the substrate processing method according to the embodiment of the present invention.

A‧‧‧溫度感測器 A‧‧‧Temperature Sensor

15‧‧‧溫度控制單元 15‧‧‧ Temperature Control Unit

16‧‧‧單元本體 16‧‧‧ Unit Ontology

16a‧‧‧接觸面 16a‧‧‧Contact surface

16b‧‧‧背面 16b‧‧‧Back

17‧‧‧加熱器 17‧‧‧heater

18‧‧‧冷卻器流路 18‧‧‧ cooler flow path

20‧‧‧配線 20‧‧‧ wiring

24,25‧‧‧維修用的蓋 24,25‧‧‧ Cover for maintenance

26‧‧‧螺孔 26‧‧‧ screw holes

Claims (14)

一種溫度控制單元,係與基板接觸來控制該基板的溫度之溫度控制單元,其特徵係具備:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及將前述複數的直線狀的加熱器分成對向的2組而連接之2條的電線,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,各前述加熱器係彼此平行地配置成在前述2組的一方的組中鄰接的2個加熱器之間存在前述2組的另一方的組的1個加熱器,以前述一方的組與前述另一方的組的開放端彼此間對向的方式,前述一方的組係以前述2條電線的一方的電線來連接前述加熱器的一方的端部,前述另一方的組係以前述2條電線的另一方的電線來連接前述加熱器的另一方的端部而構成,前述媒体流路係配置成經過鄰接的2個前述加熱器之間的部分,在前述加熱器的端部彎曲。 A temperature control unit is a temperature control unit that is in contact with a substrate to control the temperature of the substrate, and is characterized in that: a plate-shaped body that is in contact with the substrate, and a plurality of linear heaters embedded in the body And the plurality of straight-line heaters are divided into two pairs of wires that are connected to each other in the opposite direction, and a media flow path of the medium that is formed in the body and flows inside the predetermined temperature, and each of the heaters In parallel with each other, one heater of the other group of the two groups is present between two heaters adjacent to one of the two groups, and the one group and the other group are open. In a manner in which the ends are opposed to each other, one of the two sets of wires is connected to one end of the heater by one of the two electric wires, and the other one is connected by the other electric wire of the two electric wires. The other end portion of the heater is connected, and the medium flow path is disposed so as to pass through a portion between the adjacent two heaters, and is bent at an end portion of the heater. 如申請專利範圍第1項之溫度控制單元,其中,在與前述本體的平面視的1個前述加熱器垂直的方向,各前述加熱器及前述媒體流路係交替地以等間隔配置。 The temperature control unit according to claim 1, wherein each of the heaters and the media flow path are alternately arranged at equal intervals in a direction perpendicular to one of the heaters in plan view of the main body. 如申請專利範圍第1或2項之溫度控制單元,其中,在前述本體之與前述基板的接觸面相反側的面,更具備被配置成對應於被埋設在前述本體內的各加熱器的位置之蓋,前述蓋係可開閉。 The temperature control unit according to claim 1 or 2, wherein the surface of the main body opposite to the contact surface of the substrate further includes a position corresponding to each of the heaters embedded in the body The cover can be opened and closed. 如申請專利範圍第3項之溫度控制單元,其中,前述本體係具有用以安裝前述蓋的螺絲用的螺孔,前述媒體流路係於鄰接的2個前述加熱器之間蛇行成避開前述螺孔。 The temperature control unit of claim 3, wherein the system has a screw hole for a screw for mounting the cover, and the media flow path is snaking between two adjacent heaters to avoid the foregoing Screw hole. 如申請專利範圍第4項之溫度控制單元,其中,前述蛇行的媒體流路的曲部之前述本體的平面視的曲率為半徑40mm以上。 The temperature control unit of claim 4, wherein the curvature of the body of the curved portion of the meandering media flow path has a radius of 40 mm or more. 一種基板載置台,係載置基板的基板載置台,其特徵係具備:與前述基板接觸來控制該基板的溫度之溫度控制單元,及支撐該溫度控制單元的基部,前述溫度控制單元係具有:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及將前述複數的直線狀的加熱器分成對向的2組而連接之2條的電線,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,各前述加熱器係彼此平行地配置成在前述2組的一方的組中鄰接的2個加熱器之間存在前述2組的另一方的組的1個加熱器,以前述一方的組與前述另一方的組的開放端彼此間對向的方式,前述一方的組係以前述2條電線的一方的電線來連接前述加熱器的一方的端部,前述另一方的組係以前述2條電線的另一方的電線來連接前述加熱器的另一方的端部而構成,前述媒体流路係配置成經過鄰接的2個前述加熱器之 間的部分,在前述加熱器的端部彎曲。 A substrate mounting table is a substrate mounting table on which a substrate is mounted, and is characterized in that: a temperature control unit that contacts the substrate to control the temperature of the substrate, and a base that supports the temperature control unit, wherein the temperature control unit has: a plate-shaped body that is in contact with the substrate, and a plurality of linear heaters that are embedded in the body, and two wires that connect the plurality of linear heaters into two opposing groups. And a media flow path of the medium formed in the body and flowing inside the predetermined temperature, wherein the heaters are arranged in parallel with each other so that the two heaters are adjacent to each other in one of the two groups. One of the heaters of the other group of the group is connected to each other by one of the two electric wires so that the one of the two groups faces the open end of the other group. One end of the heater, and the other one of the two sets is connected to the other end of the heater by the other electric wire of the two electric wires, and the media flow path is configured After set to two adjacent of said heater The portion between the ends is bent at the end of the aforementioned heater. 一種基板處理裝置,係對基板實施處理的基板處理裝置,其特徵係具備:收容前述基板的收容室,及被配置於該收容室內而載置前述基板的基板載置台,前述基板載置台係具有:與前述基板接觸來控制該基板的溫度之溫度控制單元,及支撐該溫度控制單元的基部,前述溫度控制單元係具有:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及將前述複數的直線狀的加熱器分成對向的2組而連接之2條的電線,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,各前述加熱器係彼此平行地配置成在前述2組的一方的組中鄰接的2個加熱器之間存在前述2組的另一方的組的1個加熱器,以前述一方的組與前述另一方的組的開放端彼此間對向的方式,前述一方的組係以前述2條電線的一方的電線來連接前述加熱器的一方的端部,前述另一方的組係以前述2條電線的另一方的電線來連接前述加熱器的另一方的端部而構成,前述媒体流路係配置成經過鄰接的2個前述加熱器之間的部分,在前述加熱器的端部彎曲。 A substrate processing apparatus which is a substrate processing apparatus that performs processing on a substrate, and includes: a storage chamber in which the substrate is housed; and a substrate mounting table in which the substrate is placed in the storage chamber, wherein the substrate mounting table has a temperature control unit that controls the temperature of the substrate in contact with the substrate, and a base portion that supports the temperature control unit. The temperature control unit has a plate-shaped body that is in contact with the substrate, and is embedded in the body. a plurality of straight-line heaters, and two electric wires that connect the plurality of linear heaters into two opposite pairs, and a media stream that is formed in the body and flows inside the predetermined temperature Each of the heaters is arranged in parallel with each other so that one heater of the other of the two groups is present between two heaters adjacent to one of the two groups, and the one of the groups is In the above-described one of the groups, the one of the two sets of the electric wires is connected to one of the heaters. In the other end, the other group is configured by connecting the other end of the heater with the other electric wire of the two electric wires, and the media flow path is disposed between the adjacent two heaters The portion is bent at the end of the aforementioned heater. 一種溫度控制系統,係控制基板的溫度之溫度控制系統,其特徵係具備: 溫度控制單元,其係具有:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及將前述複數的直線狀的加熱器分成對向的2組而連接之2條的電線,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,與前述基板接觸來控制該基板的溫度;加熱器控制單元,其係控制前述加熱器的發熱量;及媒體控制單元,其係控制流動於前述媒體流路的媒體的流量或溫度,在前述溫度控制單元的前述本體中,各前述加熱器係彼此平行地配置成在前述2組的一方的組中鄰接的2個加熱器之間存在前述2組的另一方的組的1個加熱器,以前述一方的組與前述另一方的組的開放端彼此間對向的方式,前述一方的組係以前述2條電線的一方的電線來連接前述加熱器的一方的端部,前述另一方的組係以前述2條電線的另一方的電線來連接前述加熱器的另一方的端部而構成,前述媒体流路係配置成經過鄰接的2個前述加熱器之間的部分,在前述加熱器的端部彎曲。 A temperature control system is a temperature control system for controlling the temperature of a substrate, and has the following features: The temperature control unit includes a plate-shaped body that is in contact with the substrate, a plurality of linear heaters that are embedded in the body, and two groups that divide the plurality of linear heaters into opposite directions. And the two connected wires and the media flow path of the medium formed in the body and flowing inside the predetermined temperature, and the substrate is in contact with the substrate to control the temperature of the substrate; and the heater control unit controls the heater And a media control unit that controls a flow rate or a temperature of a medium flowing through the media flow path, wherein each of the heaters is disposed in parallel with each other in the body of the two groups in the body of the temperature control unit One heater of the other group of the two groups is present between two adjacent heaters in one of the groups, and the one of the one group and the open end of the other group are opposed to each other. In the group, one end of the heater is connected to one of the two electric wires, and the other group is connected to the other electric wire of the two electric wires. The other end of the heat being configured, the media flow path system passing portion arranged between two adjacent heater of the bent end portion of the heater. 一種基板處理方法,係使用溫度控制單元的基板處理方法,該溫度控制單元係與基板接觸來控制該基板的溫度之溫度控制單元,具備:與前述基板接觸之板狀的本體,及被埋設於該本體內之複數的直線狀的加熱器,及將 前述複數的直線狀的加熱器分成對向的2組而連接之2條的電線,及被形成於前述本體內而在內部流動預定溫度的媒體之媒體流路,各前述加熱器係彼此平行地配置成在前述2組的一方的組中鄰接的2個加熱器之間存在前述2組的另一方的組的1個加熱器,以前述一方的組與前述另一方的組的開放端彼此間對向的方式,前述一方的組係以前述2條電線的一方的電線來連接前述加熱器的一方的端部,前述另一方的組係以前述2條電線的另一方的電線來連接前述加熱器的另一方的端部而構成,前述媒体流路係配置成經過鄰接的2個前述加熱器之間的部分,在前述加熱器的端部彎曲。其特徵為:在將前述基板冷卻至目標冷卻溫度時,往前述媒體流路供給比前述目標冷卻溫度更低的溫度的媒體。 A substrate processing method using a substrate processing method of a temperature control unit that is in contact with a substrate to control a temperature of the substrate, and includes a plate-shaped body that is in contact with the substrate, and is embedded in a plurality of linear heaters in the body, and The plurality of linear heaters are divided into two wires that are connected in two opposite directions, and a media flow path of a medium that is formed in the body and that flows inside the predetermined temperature, and the heaters are parallel to each other. One heater of the other group of the two groups is disposed between two heaters adjacent to one of the two groups, and the open ends of the one group and the other group are arranged In the above-described manner, one of the two sets of wires is connected to one end of the heater by one of the two electric wires, and the other one is connected to the other by the other electric wires of the two electric wires. The other end of the device is configured such that the medium flow path is disposed so as to pass through a portion between the adjacent two heaters and is bent at an end portion of the heater. It is characterized in that when the substrate is cooled to a target cooling temperature, a medium having a temperature lower than the target cooling temperature is supplied to the medium flow path. 如申請專利範圍第9項之基板處理方法,其中,當前述溫度控制單元的本體的溫度到達僅比前述目標冷卻溫度高第1預定溫度的第1控制變更溫度時,將往前述媒體流路供給的媒體的溫度變更至前述目標冷卻溫度。 The substrate processing method according to claim 9, wherein when the temperature of the main body of the temperature control unit reaches a first control change temperature that is higher than the target cooling temperature by a first predetermined temperature, the medium flow path is supplied. The temperature of the medium is changed to the aforementioned target cooling temperature. 如申請專利範圍第10項之基板處理方法,其中,前述第1預定溫度為2℃以上且未滿20℃。 The substrate processing method according to claim 10, wherein the first predetermined temperature is 2 ° C or more and less than 20 ° C. 如申請專利範圍第10或11項之基板處理方法,其中,當前述溫度控制單元的本體的溫度到達僅比前述目 標冷卻溫度高第2預定溫度的第2控制變更溫度時,使前述加熱器發熱,前述第2預定溫度係比前述第1預定溫度更低。 The substrate processing method of claim 10 or 11, wherein when the temperature of the body of the temperature control unit reaches only the aforementioned When the second control changes the temperature at which the cooling temperature is higher than the second predetermined temperature, the heater is heated, and the second predetermined temperature is lower than the first predetermined temperature. 如申請專利範圍第12項之基板處理方法,其中,前述第2預定溫度為1℃以上且未滿10℃。 The substrate processing method according to claim 12, wherein the second predetermined temperature is 1 ° C or more and less than 10 ° C. 如申請專利範圍第9~11項中的任一項所記載之基板處理方法,其中,在將前述基板加熱至目標加熱溫度時,使前述加熱器發熱,且往前述媒體流路供給比前述目標加熱溫度更高的溫度的媒體。 The substrate processing method according to any one of claims 9 to 11, wherein when the substrate is heated to a target heating temperature, the heater is heated, and the medium flow path is supplied to the target. A medium that heats the temperature at a higher temperature.
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