TWI549316B - The method of transferring light emitting wafers - Google Patents

The method of transferring light emitting wafers Download PDF

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Publication number
TWI549316B
TWI549316B TW103141778A TW103141778A TWI549316B TW I549316 B TWI549316 B TW I549316B TW 103141778 A TW103141778 A TW 103141778A TW 103141778 A TW103141778 A TW 103141778A TW I549316 B TWI549316 B TW I549316B
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Taiwan
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light
emitting
fluid
transferring
wafers
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TW103141778A
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TW201622170A (zh
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Jing-Liang Lin
Yu-Hong Lai
zi-yang Lin
pei-xin Chen
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Priority to TW103141778A priority Critical patent/TWI549316B/zh
Priority to US14/952,227 priority patent/US9412912B2/en
Publication of TW201622170A publication Critical patent/TW201622170A/zh
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Publication of TWI549316B publication Critical patent/TWI549316B/zh

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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Description

發光晶片的轉移方法
本發明是有關於一種發光晶片的轉移方法，特別是指一種利用流體轉移的發光晶片的轉移方法。
一般要將在磊晶基板上製得的發光晶片陣列轉移到所要應用的不同尺寸的顯示面板時，由於該等發光晶片陣列於磊晶基板的排列間距與所要應用的顯示面板的發光晶片的排列間距並不相同，因此，須要改變該等發光晶片的間距並將其轉移到所要應用的顯示面板後，方可實際應用。
常用的發光晶片轉移方式，可利用多次轉移，將形成在磊晶基板上的發光晶片逐一轉移到所要應用的基板上，因此，在轉移的過程即可控制各個發光晶片的位置，而改變發光晶片的排列間距。或是將磊晶基板上的發光晶片陣列先轉移到一可擴張拉伸的藍膜上，再拉伸藍膜，利用藍膜的擴展同步改變位於藍膜上的發光晶片陣列的間距至預定間距範圍後，再將該等改變排列間距的發光晶片轉移到預定使用的基板上。
前述利用多次轉移方式雖然可精確的控制每一個發光晶片的排列間距，然而製程繁複，且每一次轉移的 對位均須精準，否則，反而會造成轉移後的該等發光晶片之間產生對位誤差。而以藍膜拉伸改變排列間距的方式，則須要經過基板的轉移，且在撕除藍膜時也容易會造成發光晶片的損傷。
因此，本發明之目的，即在提供一種發光晶片的轉移方法。
於是，本發明的發光晶片的轉移方法的一第一實施例，包含一步驟A、一步驟B、一步驟C，及一步驟D。
該步驟A是提供一個發光單元，該發光單元具有一個臨時基板，及多個與該臨時基板連接的發光晶片。
該步驟B是將該等發光晶片自該臨時基板移除，令該等發光晶片進入一含有流體的流體槽。
該步驟C是利用該流體的流動，改變該等發光晶片的間距至一預設間距。
該步驟D是準備一封裝基板，該封裝基板具有多個與該等具有該預設間距的發光晶片對應的連接墊，將該封裝基板置於該流體中，利用該封裝基板將與該等連接墊對位的發光晶片移出該流體槽。
本發明之功效在於：利用流體做為發光晶片的分散介質，利用控制流體的移動，改變分散於流體中的發光晶片的間距，將發光晶片轉移至一封裝基板，而可提供一種更為新穎的轉移、對位方式。
100‧‧‧流體槽
101‧‧‧流體
2‧‧‧發光單元
21‧‧‧臨時基板
22‧‧‧發光晶片
221‧‧‧半導體磊晶層
222‧‧‧合金層
3‧‧‧封裝基板
31‧‧‧連接墊
4‧‧‧格網
41‧‧‧網格
A‧‧‧步驟
B‧‧‧步驟
C‧‧‧步驟
D‧‧‧步驟
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是一文字流程圖，說明本發明發光晶片的轉移方法之第一實施例；圖2是一流程示意圖，說明該第一實施例；圖3是一示意圖，輔助說明圖2之發光單元；及圖4是一流程示意圖，說明本發明發光晶片的轉移方法之第二實施例。
參閱圖1~圖3，本發明發光晶片的轉移方法的一第一實施例，包含：一步驟A、一步驟B、一步驟C，及一步驟D。
該步驟A是提供一個發光單元2。
配合參閱圖3，該發光單元2具有一個臨時基板21，及多個與該臨時基板21連接的發光晶片22。其中，該臨時基板21是具有支撐性的基材，且可在經由實施一移除步驟後，令該等發光晶片22自該臨時基板21脫離。具體的說，該臨時基板21可以是例如藍寶石基板、藍膜、光解膠帶、熱解膠帶；其中，該藍寶石基板是原始用於磊晶成長該等發光晶片22的磊晶基板，而該藍膜、光解膠帶、熱解膠帶則是將該等發光晶片22經過一次基板轉移後之承載基板。該光解膠帶及該熱解膠帶是指照射預定波長的光線或加熱至預定溫度後，會失去/降低對物體的黏性的材料。 由於該藍膜、光解膠帶，及熱解膠帶為業界所習知，因此不再多加敘述。
該等發光晶片22具有可發出預定光色的半導體磊晶層221，及一形成於該半導體磊晶層221表面的合金層222，其中，該等半導體磊晶層221可發出一種或多種不同光色，且該等半導體磊晶層221的高度可為相同或不同，該合金層222選自共晶溫度介於140~300℃的合金材料，例如金錫合金(AuSn)、銀錫合金(AgSn)、金鍺合金(AuGe)、鋁銦合金(AlIn)，或金銦合金(AuIn)，但不限於此。由於該等半導體磊晶層221及該合金層222的結構及相關材料的選擇為本技術領域所周知且非為本發明的重點，因此，不再多加贅述。
該步驟B是將該等發光晶片22自該臨時基板21移除，令該等發光晶片22進入一含有流體101的流體槽100。
詳細的說，當該臨時基板21是藍寶石基板或藍膜時，該步驟B可以利用流體沖刷的方式，令該等發光晶片22與該臨時基板21脫離，而進入至該流體槽100的流體101中；當該臨時基板21是藍膜、光解膠帶，或熱解膠帶時，則該步驟B可以照光或加熱方式，令該等發光晶片22與該臨時基板21分離，而進入該流體101。
接著進行該步驟C，利用該流體101的流動，改變該等發光晶片22的間距至一預設間距。
要說明的是，較佳地，該流體101的密度大於 該等發光晶片，如此，該等發光晶片22漂浮於該流體101表面，後續易於控制該等發光晶片22的間距，而該流體101可選自一般極性或非極性的液態溶劑，或是具有磁性的磁流體。
詳細的說，當該流體101為選自極性或非極性的液態溶劑時，該流體槽100可配合設置多個可用以控制該溶劑於橫向及縱向的流速及方向的控制器(圖未示)，該步驟C是利用該溶劑做為該等發光晶片22的承載及分散介質，並藉由該等控制器控制該溶劑的流速及方向，讓分散於該溶劑中該等發光晶片22在流動過程中分散並改變其一維及/或二維的分佈間距，直到調整至所須的該預設間距為止。較佳地，考量後續移除該流體101的製程操作性，該流體101選自沸點低於140℃的溶劑；再者，當該流體101的黏度太低，無法有效的帶動發光晶片22，然而，黏度過高，又會容易附著在發光晶片22表面不易移除，因此，更佳地，該流體101的黏度介於0.5至100cp(25℃)。
當該流體101是選自具有磁性的磁流體時，則該步驟C可藉由外加磁場的施加，或是可進一步配合可用以控制該流體101的橫向及縱向的流速的該等控制器，改變並控制該磁流體的分佈及流動方向，進而令分散於該磁流體中的等發光晶片22，在流動過程中分散並改變其一維及/或二維分佈間距，直至所須的該預設間距為止。
最後進行該步驟D，利用一封裝基板3將該等發光晶片22移出該流體槽100。
該封裝基板3可以是印刷電路板、TFT基板或CMOS基板，且該封裝基板3具有多個呈一預定間距分佈的連接墊31。該步驟D是將該封裝基板3置於該流體101中，將經過該步驟C，間距改變至與該等連接墊31的該預定間距相配合的該等發光晶片22與該封裝基板3的該等連接墊31對位後，再利用該封裝基板3將與該等連接墊31對位的發光晶片22移出該流體槽100。最後，將殘留於該封裝基板3與該等發光晶片22的該流體101移除，再將該等發光晶片22與該等連接墊31接合後，即可完成該等發光晶片22的轉移。
詳細的說，該等連接墊31是選自共晶溫度介於140~300℃的合金材料，例如金錫合金(AuSn)、銀錫合金(AgSn)、金鍺合金(AuGe)、鋁銦合金(AlIn)，或金銦合金(AuIn)，但不限於此。該等發光晶片22與該等連接墊31可藉由加熱至該等連接墊31的共晶溫度，令該等連接墊31熔融後即可與該等發光晶片22接合。
要說明的是，將該等發光晶片22定位並移出該流體槽100後，當該流體101是一般溶劑時，可利用加熱法移去該流體101，而為了避免因溶劑的沸點過高導致在加熱移除該溶劑的過程中破壞該等連接墊31，因此該溶劑的沸點的上限須要低於合金材料的最低共晶溫度，而該溶劑的沸點的下限則沒有特別限制，高於室溫，可在室溫下操作即可。而當該流體101是選自磁流體時，則可利用磁場的控制將殘留的磁流體移除。
本發明以該流體101作為分散承載介質，藉由控制該流體101的流動，改變分散於該流體101內之發光晶片22的間距，而可提供另一種轉移發光晶片的方法。
本發明發光晶片的轉移方法的一第二實施例，與該第一實施例的步驟A~D大致相同，不同處在於，該第二實施例的步驟D還包含準備一格網4。
參閱圖4，該格網4具有多個與該等連接墊31配合的網格41，且該等網格41的尺寸不小於該等發發光晶片22。該第二實施例的該步驟D，是將該封裝基板3與該格網4同時置入該流體101中，並將該格網4設置在該封裝基板3的上方，而介於該封裝基板3與該等發光晶片22之間。因此，該步驟D可進一步利用該格網4，將間距改變後與該等連接墊31的位置相對應的該等發光晶片22固置、對位，而可更準確的控制該等發光晶片42與該等連接墊31的對位精度。
較佳地，為了令該等分散後的發光晶片22可更易於利用該格網4進行對位，該格網4的表面可進一步經由改質或是材料的選擇，而使其具有與該流體101相反的親水或疏水性質。利用令該格網4與該流體101的親、疏水性相反的特性，因此，該流體101會因表面張力而不易停留在該格網4上，藉此，分散在該流體101中的發光晶片22被帶入該等網格41後即不易再被該流體101帶出該等網格41，而可具有更好的定位效果。
此外要再說明的是，該第一、二實施中，該等 發光晶片22的表面也可以先經由表面改質，而使其具有與該流體101相同的親、疏水性性質。利用令該等發光晶片22表面與該流體101具有相同的親、疏水性性質，因此，分散於該流體101的發光晶片22能夠吸附該流體101中的極性粒子或非極性粒子，使該等發光晶片22表面可具有相同的電荷，而讓該等發光晶片22之間因同種電荷排斥而分散。例如，當該流體101是選自極性溶劑(水)時，可將該等發光晶片22先進行表面處理，使其表面具有親水性基團，因此，當將該等表面具有親水性基團的發光晶片22分散於該流體101時，該等發光晶片22表面的親水性基團即能吸附極性粒子，而使該等發光晶片22表面具有相同的電荷，並可互相排斥而分離。較佳地，可進一步控制發光晶片22表面親水或疏水性基團的含量，而控制該些發光晶片22的間距。
綜上所述，本發明透過流體做為發光晶片的分散介質，利用控制流體的移動，即可改變分散於流體中的發光晶片的間距，而將該等發光晶片22轉移至該封裝基板3，因此，可提供一種更為新穎的轉移、對位方式，此外，本發明還可藉由該格網4，提昇該等發光晶片2與該封裝基板3的對位，另外，還可進一步利用該格網4、流體101與該等發光晶片22之間的親、疏水性的搭配控制，而可更進一步提升該等發光晶片22的分散及對位控制，故確實能達成本發明之目的
惟以上所述者，僅為本發明之較佳實施例而 已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
100‧‧‧流體槽
101‧‧‧流體
2‧‧‧發光單元
21‧‧‧臨時基板
22‧‧‧發光晶片
3‧‧‧封裝基板
A‧‧‧步驟
C‧‧‧步驟
B‧‧‧步驟
D‧‧‧步驟

Claims (11)

  1. 一種發光晶片的轉移方法，包含以下步驟：步驟A，提供一個發光單元，該發光單元具有一個臨時基板，及多個與該臨時基板連接的發光晶片；步驟B，將該等發光晶片自該臨時基板移除，令該等發光晶片進入一含有流體的流體槽；步驟C，利用該流體的流動，改變該等發光晶片的間距至一預設間距；步驟D，準備一封裝基板，該封裝基板具有多個與該等具有該預設間距的發光晶片對應的連接墊，且該等連接墊是選自共晶溫度介於140~300℃的合金材料構成，將該封裝基板置於該流體中，利用該封裝基板將與該等連接墊對位的發光晶片移出該流體槽。
  2. 如請求項1所述的發光晶片的轉移方法，其中，該步驟C是同時利用該流體的流速及方向控制，以同時改變該等發光晶片的二維方向的間距。
  3. 如請求項1所述的發光晶片的轉移方法，其中，該流體為具有磁性的磁流體，該步驟C為利用一外加磁場，使該磁流體流動，而使該等發光晶片具有該預設間距。
  4. 如請求項2所述的發光晶片的轉移方法，其中，該等發光晶片表面具有親水性基團或疏水性基團，該流體為選自具有與該等發光晶片的表面性質相同的溶劑。
  5. 如請求項4所述的發光晶片的轉移方法，其中，該等發光晶片表面具有親水性基團，該流體為極性溶劑。
  6. 如請求項2所述的發光晶片的轉移方法，其中，該步驟D還準備一具有多個網格的格網，該等網格的位置與該等連接墊相對應，並將該格網設於該封裝基板的上方，該步驟D是利用該封裝基板與該格網，令該等發光晶片與該等連接墊對位後，再利用該封裝基板將該等發光晶片移出該流體槽。
  7. 如請求項6所述的發光晶片的轉移方法，其中，該格網的表面具有親水性基團或疏水性基團，該流體為選自具有與該格網的表面性質相反的溶劑。
  8. 如請求項2所述的發光晶片的轉移方法，其中，該流體的沸點低於140℃。
  9. 如請求項2所述的發光晶片的轉移方法，其中，該流體於25℃的黏度介於0.5至100cp。
  10. 如請求項1所述的發光晶片的轉移方法，其中，該封裝基板為印刷電路板、TFT基板或CMOS基板。
  11. 如請求項1所述的發光晶片的轉移方法，其中，所述的發光晶片的轉移方法，其中，該步驟A是利用流體沖刷方式，將該等發光晶片自該臨時基板移除。
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