TWI544293B - Apparatus for amending tilt of mask and substrate processing apparatus - Google Patents

Apparatus for amending tilt of mask and substrate processing apparatus Download PDF

Info

Publication number
TWI544293B
TWI544293B TW103129254A TW103129254A TWI544293B TW I544293 B TWI544293 B TW I544293B TW 103129254 A TW103129254 A TW 103129254A TW 103129254 A TW103129254 A TW 103129254A TW I544293 B TWI544293 B TW I544293B
Authority
TW
Taiwan
Prior art keywords
reticle
laser beam
substrate
holder
support body
Prior art date
Application number
TW103129254A
Other languages
Chinese (zh)
Other versions
TW201508424A (en
Inventor
梁相熙
白聖煥
金戊一
金鎬岩
Original Assignee
Ap系統股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ap系統股份有限公司 filed Critical Ap系統股份有限公司
Publication of TW201508424A publication Critical patent/TW201508424A/en
Application granted granted Critical
Publication of TWI544293B publication Critical patent/TWI544293B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

用於修正光罩的傾角的設備以及基板處理設備 Apparatus for correcting the inclination of a reticle and a substrate processing apparatus

本發明是有關於一種修正光罩的傾角的設備及基板處理設備,且特別是有關於一種用於修正光罩的傾角的設備,所述光罩用於通過使用雷射光束使基板圖案化,所述用於修正光罩的傾角的設備應用於基板處理設備。 The present invention relates to an apparatus and substrate processing apparatus for correcting the tilt angle of a reticle, and more particularly to an apparatus for correcting the tilt angle of a reticle for patterning a substrate by using a laser beam, The apparatus for correcting the tilt angle of the reticle is applied to a substrate processing apparatus.

根據有機電致發光裝置的材料和製程,有機電致發光顯示裝置可以分為使用濕法製程的高分子裝置和使用沉積製程的低分子裝置。在使高分子發光層或低分子發光層圖案化的方法之中的噴墨印刷方法的情況下,除了發光層之外的有機層在材料上受到限制,並且不便於在基板上形成用於噴墨印刷的結構。而且,當發光層通過沉積製程得到圖案化時,由於金屬光罩的使用而難以製造大型裝置。 According to the materials and processes of the organic electroluminescence device, the organic electroluminescence display device can be classified into a polymer device using a wet process and a low molecular device using a deposition process. In the case of the inkjet printing method among the methods of patterning the polymer light-emitting layer or the low molecular light-emitting layer, the organic layer other than the light-emitting layer is limited in material, and it is inconvenient to form a spray on the substrate. The structure of ink printing. Moreover, when the light-emitting layer is patterned by a deposition process, it is difficult to manufacture a large device due to the use of the metal mask.

作為圖案化方法的替代技術,使用雷射誘導熱成像(laser induced thermal imaging,LITI)方法。LITI方法被定義為這樣一種 方法,其中從光源產生的雷射光束被轉換成熱能,並且隨後用於形成圖案的材料由於熱能而傳遞到基板上以在基板上形成圖案。為此,施體薄膜具有這樣一種結構,其中作為受體的基板完全由施體薄膜覆蓋,並且施體薄膜和基板被固定到載物臺上。施體薄膜和基板通過層壓製程進一步彼此附接,並且隨後通過使用雷射光束傳遞到基板上以使基板完全圖案化。也就是說,當雷射被照射到發光層先前形成於其上的施體薄膜或施體基板上時,發光層與施體薄膜或施體基板分離並且隨後被傳遞到受體基板上以形成畫素。 As an alternative to the patterning method, a laser induced thermal imaging (LITI) method is used. The LITI method is defined as such a The method wherein the laser beam generated from the light source is converted into thermal energy, and then the material used to form the pattern is transferred to the substrate due to thermal energy to form a pattern on the substrate. To this end, the donor film has a structure in which the substrate as the acceptor is completely covered by the donor film, and the donor film and the substrate are fixed to the stage. The donor film and the substrate are further attached to each other by a lamination process, and then transferred to the substrate by using a laser beam to completely pattern the substrate. That is, when the laser is irradiated onto the donor film or donor substrate on which the luminescent layer was previously formed, the luminescent layer is separated from the donor film or donor substrate and subsequently transferred to the acceptor substrate to form Picture.

圖1是使用雷射光束的基板處理設備的視圖。 1 is a view of a substrate processing apparatus using a laser beam.

使用雷射光束的基板處理設備10包含雷射源300,所述雷射源300用於產生雷射光束;投影透鏡400,所述投影透鏡400設置在雷射源300的下方;以及光罩M,所述光罩M設置在雷射源300與投影透鏡400之間並且通過使用雷射光束L傳遞圖案。然而,當光罩M由新的光罩替換時,雷射光束在基板上的焦點和位置方面有所變化。當替換光罩時,光罩可以在高度、傾角、位置等等方面有所變化,並且因此雷射光束也可以在基板上的焦點和位置方面有所變化。由於雷射光束的焦點和位置因光罩的替換而變化,因此基板處理過程可能無法順利地執行基板處理過程。 A substrate processing apparatus 10 using a laser beam includes a laser source 300 for generating a laser beam, a projection lens 400 disposed below the laser source 300, and a reticle M The mask M is disposed between the laser source 300 and the projection lens 400 and transmits a pattern by using the laser beam L. However, when the reticle M is replaced by a new reticle, the laser beam has a change in focus and position on the substrate. When replacing the reticle, the reticle can vary in height, tilt, position, etc., and thus the laser beam can also vary in focus and position on the substrate. Since the focus and position of the laser beam vary due to the replacement of the reticle, the substrate processing process may not perform the substrate processing smoothly.

【現有技術文獻】 [Prior Art Literature] 【專利文獻】 [Patent Literature]

第2012-0042144號韓國專利公開案 Korean Patent Publication No. 2012-0042144

本發明提供一種用於修正傾角的設備,以在即使替換光罩的情況下也能防止雷射光束的焦點和位置發生變化。 The present invention provides an apparatus for correcting the tilt angle to prevent a change in the focus and position of the laser beam even in the case of replacing the reticle.

本發明還提供一種基板處理設備,以在即使替換光罩的情況下也能穩定地處理基板。 The present invention also provides a substrate processing apparatus capable of stably processing a substrate even in the case of replacing a photomask.

根據一個示例性實施例,用於修正光罩的傾角的設備包含:光罩支撐主體,所述光罩支撐主體經配置以支撐其上形成有圖案的光罩;光罩支撐主體移動單元,所述光罩支撐主體移動單元經配置以改變光罩支撐主體的XY平面的傾角;照相機單元,所述照相機單元為穿過設置在基板支撐件上的基板的雷射光束拍照,以產生雷射光束穿透圖像;以及控制單元,所述控制單元經配置以控制光罩支撐主體移動單元,由此改變光罩的XY平面的傾角,以使得當雷射光束穿透圖像偏離參考焦點圖像時,所述雷射光束穿透圖像與所述參考焦點圖像匹配。 According to an exemplary embodiment, an apparatus for correcting an inclination of a reticle includes: a reticle support body configured to support a reticle having a pattern formed thereon; a reticle support body moving unit, The reticle support body moving unit is configured to change an inclination of an XY plane of the reticle support body; the camera unit photographs a laser beam passing through a substrate disposed on the substrate support to generate a laser beam a penetrating image; and a control unit configured to control the reticle support body moving unit, thereby changing an inclination of the XY plane of the reticle such that when the laser beam penetration image deviates from the reference focus image The laser beam penetration image is matched to the reference focus image.

所述光罩支撐主體可以包含:光罩固持器,所述光罩固持器具有中心部分穿透的框架形狀,所述光罩固持器具有第一、第二、第三和第四頂點,其中光罩被放置在光罩固持器上,並且光罩固持器的XY平面在傾角方面有所變化;光罩狀態,所述光罩狀態經配置以支撐其頂部表面上的光罩固持器;以及傾角變化模組,所述傾角變化模組經配置以單獨地調節光罩固持器的頂點的Z軸高度,從而改變XY平面的傾角。 The reticle support body may include: a reticle holder having a central portion penetrating frame shape, the reticle holder having first, second, third, and fourth vertices, wherein The reticle is placed on the reticle holder and the XY plane of the reticle holder varies in tilt angle; the reticle state configured to support the reticle holder on the top surface thereof; A tilt change module configured to individually adjust a Z-axis height of a apex of the reticle holder to change an inclination of the XY plane.

所述傾角變化模組可以包含:高度調節部分,所述高度 調節部分經配置以使光罩固持器的第一、第二、和第三頂點的Z軸高度能夠單獨地升高或降低;以及支撐主體,所述支撐主體經配置以將光罩固持器的第四頂點連接到光罩載物臺上。 The inclination change module may include: a height adjustment portion, the height The adjustment portion is configured to enable the Z-axis heights of the first, second, and third vertices of the reticle holder to be individually raised or lowered; and to support a body configured to hold the reticle holder The fourth vertex is connected to the reticle stage.

所述高度調節部分可以包含:第一高度調節部分,所述第一高度調節部分經配置以使光罩固持器的第一頂點的Z軸高度能夠升高或降低;第二高度調節部分,所述第二高度調節部分經配置以使光罩固持器的第二頂點的Z軸高度能夠升高或降低;以及第三高度調節部分,所述第三高度調節部分經配置以使光罩固持器的第三頂點的Z軸高度能夠升高或降低。 The height adjustment portion may include: a first height adjustment portion configured to enable a Z-axis height of the first apex of the reticle holder to be raised or lowered; a second height adjustment portion, The second height adjustment portion is configured to enable the Z-axis height of the second apex of the reticle holder to be raised or lowered; and a third height adjustment portion configured to cause the reticle holder The Z-axis height of the third vertex can be raised or lowered.

根據另一示例性實施例,基板處理設備包含:腔室,所述腔室具有基板在其中圖案化的內部空間;基板支撐件,所述基板支撐件設置在所述內部空間中以支撐基板;雷射源,所述雷射源經配置以產生雷射光束;光罩支撐主體,所述光罩支撐主體設置在雷射源與基板支撐件之間,以支撐其上形成有圖案的光罩;光罩支撐主體移動單元,所述光罩支撐主體移動單元經配置以改變光罩支撐主體的XY平面的傾角;照相機單元,所述照相機單元經配置以為穿過設置在基板支撐件上的基板的雷射光束拍照,以產生雷射光束穿透圖像;以及控制單元,所述控制單元經配置以控制光罩支撐主體移動單元,由此改變光罩的XY平面的傾角,以使得當雷射光束穿透圖像偏離參考焦點圖像時,所述雷射光束穿透圖像與所述參考焦點圖像匹配。 According to another exemplary embodiment, a substrate processing apparatus includes: a chamber having an inner space in which a substrate is patterned; a substrate support disposed in the inner space to support the substrate; a laser source configured to generate a laser beam; a reticle supporting body disposed between the laser source and the substrate support to support a mask formed thereon a reticle supporting body moving unit, the reticle supporting body moving unit configured to change an inclination of an XY plane of the reticle support body; a camera unit configured to pass through a substrate disposed on the substrate support Photographing a laser beam to produce a laser beam penetration image; and a control unit configured to control the reticle support body moving unit, thereby changing the tilt angle of the XY plane of the reticle to enable The laser beam penetration image matches the reference focus image when the beam penetration image deviates from the reference focus image.

1‧‧‧導軌 1‧‧‧rail

2‧‧‧平臺 2‧‧‧ platform

10‧‧‧基板處理設備 10‧‧‧Substrate processing equipment

100‧‧‧腔室 100‧‧‧ chamber

200‧‧‧基板支撐件 200‧‧‧Substrate support

300‧‧‧雷射源 300‧‧‧Laser source

350‧‧‧反射鏡 350‧‧‧Mirror

400‧‧‧投影透鏡 400‧‧‧Projection lens

500‧‧‧光罩支撐主體 500‧‧‧Photomask support body

510‧‧‧光罩固持器 510‧‧‧Photomask Holder

510a‧‧‧邊緣 Edge of 510a‧‧

520‧‧‧傾角變化模組 520‧‧‧Dip Change Module

521‧‧‧支撐主體 521‧‧‧Support subject

522、522a、522b、522c‧‧‧高度調節部分 522, 522a, 522b, 522c‧‧‧ height adjustment section

530‧‧‧光罩載物台 530‧‧‧Photomask stage

600‧‧‧控制單元 600‧‧‧Control unit

700‧‧‧光罩支撐主體移動單元 700‧‧‧Photomask support body mobile unit

800‧‧‧照相機單元 800‧‧‧ camera unit

M‧‧‧光罩 M‧‧‧Photo Mask

L‧‧‧雷射光束 L‧‧‧Laser beam

W‧‧‧基板 W‧‧‧Substrate

可以從結合附圖所作的以下描述中更詳細地理解示例性實施例,其中:圖1是使用雷射光束的基板處理設備的視圖。 The exemplary embodiments can be understood in more detail from the following description taken in conjunction with the accompanying drawings in which: FIG. 1 is a view of a substrate processing apparatus using a laser beam.

圖2是說明根據一個示例性實施例的基板處理設備的構成的視圖。 FIG. 2 is a view illustrating a configuration of a substrate processing apparatus according to an exemplary embodiment.

圖3是根據一個示例性實施例的光罩支撐主體的耦合圖。 3 is a coupling diagram of a reticle support body, in accordance with an exemplary embodiment.

圖4是根據一個示例性實施例的光罩支撐主體的分解圖。 4 is an exploded view of a reticle support body, in accordance with an exemplary embodiment.

圖5是根據一個示例性實施例的說明其中光罩載物台移動部分被實現為線性馬達(linear motor,LM)引導件的實例的視圖。 FIG. 5 is a view illustrating an example in which a reticle stage moving portion is implemented as a linear motor (LM) guide, according to an exemplary embodiment.

圖6的(a)、(b)是說明其中高度調節部分在Z軸長度上進行調節,以使得光罩固持器的第一頂點能夠在Z軸方向上升高的狀態的視圖。 (a) and (b) of FIG. 6 are views illustrating a state in which the height adjusting portion is adjusted in the Z-axis length so that the first vertex of the reticle holder can be raised in the Z-axis direction.

圖7的(a)、(b)是說明其中高度調節部分在Z軸長度上進行調節,以使得光罩固持器的第三頂點能夠在Z軸方向上升高的狀態的視圖。 (a) and (b) of FIG. 7 are views illustrating a state in which the height adjusting portion is adjusted in the Z-axis length so that the third vertex of the reticle holder can be raised in the Z-axis direction.

下文中將參考附圖詳細描述特定實施例。然而,本發明可以以不同的形式來體現,且不應解釋為限於本文所陳述的實施例。相反,提供這些實施例是為了使本發明透徹和完整,且將本發明的範圍完整地傳達給所屬領域的技術人員。全文中相同的參 考標號指代相同的元件。 Specific embodiments will be described in detail below with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and will be The same reference in the full text Reference numerals refer to the same components.

圖2是說明根據一個示例性實施例的基板處理設備的構成的視圖。 FIG. 2 is a view illustrating a configuration of a substrate processing apparatus according to an exemplary embodiment.

在基板處理設備10中,從雷射源300中產生的雷射光束穿過光罩M並且被照射到基板W上。此處,形成於基板W上的施體薄膜的發光層被分離且隨後基板W經圖案化以形成畫素。為此,基板處理設備10包含腔室100、基板支撐件200、雷射源300、光罩支撐主體500、光罩支撐主體移動單元700、照相機單元800以及控制單元600。 In the substrate processing apparatus 10, a laser beam generated from the laser source 300 passes through the reticle M and is irradiated onto the substrate W. Here, the light-emitting layer of the donor film formed on the substrate W is separated and then the substrate W is patterned to form a pixel. To this end, the substrate processing apparatus 10 includes a chamber 100, a substrate support 200, a laser source 300, a reticle support body 500, a reticle support body moving unit 700, a camera unit 800, and a control unit 600.

儘管腔室100具有帶有內部空間的矩形盒形狀,但是本發明不限於此。舉例來說,腔室可以具有多種容器形狀。也就是說,腔室100可以具有圓柱體形狀或多邊形盒形狀。設置在內部空間中的基板經圖案化以形成畫素。用於載入/卸載基板的入口被界定在腔室的一個側表面和另一側表面的每一者中。此處,至少一個入口連接到基板傳遞模組上。 Although the chamber 100 has a rectangular box shape with an internal space, the invention is not limited thereto. For example, the chamber can have a variety of container shapes. That is, the chamber 100 may have a cylindrical shape or a polygonal box shape. The substrate disposed in the internal space is patterned to form a pixel. An inlet for loading/unloading the substrate is defined in each of one side surface and the other side surface of the chamber. Here, at least one inlet is connected to the substrate transfer module.

投影透鏡400設置在腔室100的頂部表面上,以捕獲從雷射源300照射的雷射光束,由此將雷射束發射到基板支撐件上的基板上。儘管投影透鏡400設置在腔室100的頂部表面上,但是本發明不限於此。舉例來說,投影透鏡400可以設置在雷射光束照射通道中,所述雷射光束照射通道具有穿透腔室100的外部或內部的上部部分。 A projection lens 400 is disposed on the top surface of the chamber 100 to capture a laser beam that is illuminated from the laser source 300, thereby emitting the laser beam onto the substrate on the substrate support. Although the projection lens 400 is disposed on the top surface of the chamber 100, the invention is not limited thereto. For example, the projection lens 400 may be disposed in a laser beam irradiation passage having an upper portion that penetrates the outside or the inside of the chamber 100.

基板支撐件200設置在腔室100的內部空間中以支撐基 板W,以使得基板W的畫素區域面向上側。而且,基板支撐件200水平地移動且抬高基板W。基板支撐件200可以連接到作為用於提供抬高力的單元的圓柱體上。基板W放置在基板支撐件200上。此處,施體薄膜被層壓在基板的頂部表面(即,待圖案化的表面)(下文稱為“圖案化表面”)上。 The substrate support 200 is disposed in the inner space of the chamber 100 to support the base The board W is such that the pixel area of the substrate W faces the upper side. Moreover, the substrate support 200 moves horizontally and raises the substrate W. The substrate support 200 may be attached to a cylinder as a unit for providing an elevating force. The substrate W is placed on the substrate support 200. Here, the donor film is laminated on the top surface of the substrate (ie, the surface to be patterned) (hereinafter referred to as "patterned surface").

雷射源300通過圖案化光罩M的開口將雷射光束照射到基板W的圖案表面上。基板處理設備可以進一步包含反射鏡350。從雷射源300中發射的雷射光束由反射鏡350反射並且隨後被照射到光罩M上。雷射光束可以部分地加熱比光罩M的開口區域小的區域。氣體雷射器,例如氬雷射器、氪雷射器、準分子雷射器等等,即,使用媒介的雷射器,其中釹、鐿、鉻、鈦、鈥、鉺、銩和鉭中的至少一者被添加到單晶釔鋁石榴石、釩酸釔、矽酸鎂石(Mg2SiO4)、YAlO3、GdVO4或多晶(陶瓷)釔鋁石榴石、氧化釔、釩酸釔、YAlO3、GdVO4中作為摻雜劑,或者玻璃雷射器、紅寶石雷射器、紫翠玉雷射器、鈦藍寶石雷射器、銅蒸氣雷射器和金蒸氣雷射器中的至少一者可以用作雷射源300。雷射光束可以被提供為線形束,所述線形束與具有相對較寬區域的平面形束相比能夠容易地得到收集到並且立即被照射到基板的整個表面上。 The laser source 300 irradiates the laser beam onto the pattern surface of the substrate W through the opening of the patterned mask M. The substrate processing apparatus may further include a mirror 350. The laser beam emitted from the laser source 300 is reflected by the mirror 350 and then irradiated onto the reticle M. The laser beam can partially heat a smaller area than the open area of the reticle M. Gas lasers, such as argon lasers, krypton lasers, excimer lasers, etc., ie, lasers using a medium in which krypton, xenon, chrome, titanium, tantalum, niobium, tantalum and niobium At least one of them is added to single crystal yttrium aluminum garnet, bismuth vanadate, magnesium silicate (Mg 2 SiO 4 ), YAlO 3 , GdVO 4 or polycrystalline (ceramic) yttrium aluminum garnet, yttrium oxide, yttrium vanadate, YAlO3, GdVO4 as a dopant, or at least one of a glass laser, a ruby laser, a purple emerald laser, a titanium sapphire laser, a copper vapor laser, and a gold vapor laser can be used A laser source 300 is used. The laser beam can be provided as a linear beam that can be easily collected and immediately illuminated onto the entire surface of the substrate as compared to a planar beam having a relatively wide area.

光罩M可以是用於選擇性地阻擋或反射從雷射源300照射的雷射光束的光控制單元。光罩M具有圖案,所述圖案具有雷射光束穿過其中的開口;以及用於阻擋或反射雷射光束的阻擋部分。由於沉積材料並不穿過光罩M的開口,因此與沉積光罩不同, 光罩M可以具有相對較厚的厚度。因此,由於光罩M具有相對較厚的厚度,因此所述光罩在不會輕易受到熱量影響的情況下可以防止雷射光束衍射。而且,光罩M可以由能夠經受雷射光束的照射的材料形成,例如,高熔點材料,例如鎢、鉭、鉻、鎳或鉬,以上各項的合金;或具有低熱膨脹係數的金屬材料,所述金屬材料不會由於熱量而輕易地變形,例如,不銹鋼、鉻鎳鐵合金、哈氏合金等等。而且,光罩M可以由具有與用於附接到基板W上的施體薄膜的材料相同的熱膨脹係數的材料形成。這是為了防止光罩M和施體薄膜通過以相同熱膨脹係數使光罩M和施體薄膜膨脹而彼此不對齊,即使光罩M被加熱。 The reticle M may be a light control unit for selectively blocking or reflecting a laser beam that is illuminated from the laser source 300. The reticle M has a pattern having an opening through which a laser beam passes; and a blocking portion for blocking or reflecting the laser beam. Since the deposition material does not pass through the opening of the mask M, unlike the deposition mask, The mask M can have a relatively thick thickness. Therefore, since the reticle M has a relatively thick thickness, the reticle can prevent the laser beam from being diffracted without being easily affected by heat. Moreover, the mask M may be formed of a material capable of withstanding irradiation of a laser beam, for example, a high melting point material such as tungsten, tantalum, chromium, nickel or molybdenum, an alloy of the above; or a metal material having a low coefficient of thermal expansion, The metal material is not easily deformed by heat, for example, stainless steel, inconel, Hastelloy, and the like. Moreover, the photomask M may be formed of a material having the same coefficient of thermal expansion as that of the material for the donor film attached to the substrate W. This is to prevent the mask M and the donor film from being misaligned with each other by expanding the mask M and the donor film with the same coefficient of thermal expansion even if the mask M is heated.

基板處理設備10包含光罩傾角修正裝置,用於在替換光罩M時將光罩M的焦點和位置修正到參考值。用於將光罩M的焦點和位置修正到參考值的光罩傾角修正裝置包含光罩支撐主體500、光罩支撐主體移動單元700、照相機單元800和控制單元600。 The substrate processing apparatus 10 includes a reticle tilt correction means for correcting the focus and position of the reticle M to a reference value when the reticle M is replaced. The reticle tilt correction device for correcting the focus and position of the reticle M to the reference value includes the reticle support body 500, the reticle support body moving unit 700, the camera unit 800, and the control unit 600.

光罩支撐主體500設置在雷射源300與基板支撐件200之間,以支撐圖案化光罩M。光罩支撐主體500可以在X軸、Y軸和Z軸方向上移動並且通過使用包含傾角變化模組520和光罩載物台移動部分的光罩支撐主體移動單元700而旋轉。將參考圖3、圖4和圖5描述光罩支撐主體500和光罩載物台移動部分。 The reticle support body 500 is disposed between the laser source 300 and the substrate support 200 to support the patterned reticle M. The reticle support body 500 is movable in the X-axis, Y-axis, and Z-axis directions and is rotated by using the reticle support body moving unit 700 including the tilt angle changing module 520 and the reticle stage moving portion. The reticle support body 500 and the reticle stage moving portion will be described with reference to FIGS. 3, 4, and 5.

圖3是根據一個示例性實施例的光罩支撐主體的耦合圖,圖4是根據一個示例性實施例的光罩支撐主體的分解圖,以及圖5是根據一個示例性實施例的說明其中光罩載物台移動部分 被實現為線性馬達(liner motor,LM)引導件的實例的視圖。 3 is a coupling view of a reticle support body according to an exemplary embodiment, FIG. 4 is an exploded view of a reticle support body according to an exemplary embodiment, and FIG. 5 is an illustration of light therein according to an exemplary embodiment Cover stage moving part A view that is implemented as an example of a linear motor (LM) guide.

光罩支撐主體500包含支撐光罩M的光罩固持器510;用於支撐光罩固持器510的光罩載物台530;以及傾角變化模組520,所述傾角變化模組520單獨地調節光罩固持器的頂點中每一者的Z軸高度以改變XY平面的傾角。 The reticle support body 500 includes a reticle holder 510 supporting the reticle M; a reticle stage 530 for supporting the reticle holder 510; and a tilt variation module 520, which is separately adjusted The Z-axis height of each of the vertices of the reticle holder changes the inclination of the XY plane.

光罩載物台530在X軸和Y軸方向上移動並且通過使用光罩載物台移動部分旋轉。舉例來說,光罩載物台移動部分可以實現光罩載物台530在X軸和Y軸方向上的移動以及光罩載物台530的旋轉。舉例來說,線性馬達(liner motor,LM)引導件可以被實現為光罩載物台移動部分。圖5中說明其中LM引導件被實現為光罩載物台移動部分的一個實例。在LM引導件中,Y軸傳送平臺2沿著LM導軌1移動,並且光罩載物台530沿著Y軸傳送平臺2在X軸方向上移動。因此,當執行過程時,光罩載物台530通過在X軸和Y軸方向上的移動設置在適當位置。此處,X軸和Y軸是形成二維平面的軸。而且,光罩載物台530可以包含單獨的旋轉馬達,以除了X軸和Y軸的移動之外水準地旋轉。 The reticle stage 530 moves in the X-axis and Y-axis directions and is rotated by using the reticle stage moving portion. For example, the reticle stage moving portion can effect movement of the reticle stage 530 in the X-axis and Y-axis directions and rotation of the reticle stage 530. For example, a linear motor (LM) guide can be implemented as a reticle stage moving portion. An example in which the LM guide is implemented as a moving portion of the reticle stage is illustrated in FIG. In the LM guide, the Y-axis transfer platform 2 moves along the LM guide 1, and the reticle stage 530 moves in the X-axis direction along the Y-axis transfer stage 2. Therefore, when the process is performed, the reticle stage 530 is set at an appropriate position by movement in the X-axis and Y-axis directions. Here, the X axis and the Y axis are axes that form a two-dimensional plane. Moreover, the reticle stage 530 may include a separate rotary motor that rotates in a level other than the movement of the X-axis and the Y-axis.

圖3和圖4中說明的光罩固持器510具有框架形狀,所述框架形狀的中心部分是穿透的。此處,光罩M的邊緣位於光罩固持器510的邊緣510a上並且由所述邊緣510a支撐。穿過光罩M的雷射光束可以穿過光罩固持器的區域,所述光罩固持器的中心部分是穿透的。當然,在一些情況下,用於支撐和固定光罩M的單獨固定單元可以進一步提供於光罩固持器510中。光罩固持 器510可以被實現為具有四個頂點的矩形框架形狀,所述四個頂點為第一頂點、第二頂點、第三頂點和第四頂點。或者,光罩固持器510可以被實現為具有三個頂點、五個頂點或六個頂點的框架形狀。在下文中,將作為實例描述具有四個頂點的框架形狀。然而,可以提供具有少於或多於四個頂點的頂點的數目的光罩固持器。 The reticle holder 510 illustrated in Figures 3 and 4 has a frame shape with a central portion of the frame shape being permeable. Here, the edge of the reticle M is located on and supported by the edge 510a of the reticle holder 510. The laser beam passing through the reticle M can pass through the area of the reticle holder, the central portion of which is permeable. Of course, in some cases, a separate fixing unit for supporting and fixing the reticle M may be further provided in the reticle holder 510. Photomask holding The 510 may be implemented as a rectangular frame shape having four vertices, the first vertices being the first vertices, the second vertices, the third vertices, and the fourth vertices. Alternatively, the reticle holder 510 can be implemented as a frame shape having three vertices, five vertices, or six vertices. Hereinafter, a frame shape having four vertices will be described as an example. However, a reticle holder having a number of vertices with fewer or more than four vertices can be provided.

在示例性實施例中,光罩固持器510的XY平面的傾角可以發生變化。光罩固持器的頂點的Z軸高度可以單獨地經調節以改變XY平面的傾角。因此,提供傾角變化模組520以單獨地調節頂點中每一者的Z軸高度,從而改變XY平面。傾角變化模組520包含高度調節部分522、522a、522b和522c,用於使光罩固持器510的第一頂點、第二頂點和第三頂點的Z軸高度能夠單獨地升高或降低;以及支撐主體521,所述支撐主體521將光罩固持器510的第四頂點連接到光罩載物台530上。高度調節部分522中的每一者是馬達,該馬達的高度根據馬達的伸展操作沿著Z軸在縱向方向上得到可變的調節。光罩載物台530和光罩固持器510的頂點分別在縱向方向上連接到高度調節部分的兩端。長度可調節的高度調節部分522可以通過各種長度調節單元(例如,線性馬達)來實現。 In an exemplary embodiment, the inclination of the XY plane of the reticle holder 510 may vary. The Z-axis height of the apex of the reticle holder can be individually adjusted to change the tilt angle of the XY plane. Accordingly, the tilt variation module 520 is provided to individually adjust the Z-axis height of each of the vertices to change the XY plane. The tilt change module 520 includes height adjustment portions 522, 522a, 522b, and 522c for enabling the Z-axis heights of the first, second, and third vertices of the reticle holder 510 to be individually raised or lowered; The main body 521 is supported, and the support main body 521 connects the fourth vertex of the reticle holder 510 to the reticle stage 530. Each of the height adjustment portions 522 is a motor whose height is variably adjusted in the longitudinal direction along the Z axis in accordance with the stretching operation of the motor. The apexes of the reticle stage 530 and the reticle holder 510 are respectively connected to both ends of the height adjustment portion in the longitudinal direction. The length adjustable height adjustment portion 522 can be implemented by various length adjustment units (eg, linear motors).

高度調節部分522包含第一高度調節部分522a,光罩固持器510的第一頂點的高度通過所述第一高度調節部分在Z軸方向上升高或降低;第二高度調節部分522b,光罩固持器510的第 二頂點的高度通過所述第二高度調節部分522b在Z軸方向上升高或降低;以及第三高度調節部分522c,光罩固持器510的第三頂點的Z軸高度通過所述第三高度調節部分升高或降低。高度調節部分522中的每一者是在縱向方向上長度可變地可調節的馬達。高度調節部分522中的每一者具有這樣一種結構,其中光罩載物台530和光罩固持器510的頂點中的每一者在縱向方向上連接到高度調節部分522中的每一者的兩端上。 The height adjustment portion 522 includes a first height adjustment portion 522a through which the height of the first apex of the reticle holder 510 is raised or lowered in the Z-axis direction; the second height adjustment portion 522b, the reticle holding 510 of the device The height of the two apexes is raised or lowered in the Z-axis direction by the second height adjusting portion 522b; and the third height adjusting portion 522c, the Z-axis height of the third apex of the reticle holder 510 is adjusted by the third height Partially raised or lowered. Each of the height adjustment portions 522 is a motor that is variably adjustable in length in the longitudinal direction. Each of the height adjustment portions 522 has a structure in which each of the apex of the reticle stage 530 and the reticle holder 510 is connected to each of the height adjustment portions 522 in the longitudinal direction. On the end.

支撐主體521設置在第四頂點上,以將光罩固持器510的第四頂點支撐在光罩載物台530上。支撐主體521可以通過具有彈力的彈簧或不具有彈力的金屬棒來實現。 The support body 521 is disposed on the fourth apex to support the fourth apex of the reticle holder 510 on the reticle stage 530. The support body 521 can be realized by a spring having a spring force or a metal bar having no elasticity.

因此,當某一頂點的高度在Z軸上升高或降低時,光罩固持器510的XY平面的傾角可以發生變化。舉例來說,如圖6的(a)、(b)所示,當設置在第一頂點上的第一高度調節部分522a在Z軸長度上延伸,以在Z軸方向上提升光罩固持器510的第一頂點時,光罩固持器510的XY平面具有某一傾角,所述第一頂點以該傾角設置在相對高於其他頂點的高度處。此處,設置在第四頂點上的支撐主體521(例如,彈簧)延伸,並且因此設置在第二頂點上的第二高度調節部分522b也可以在與第四頂點的高度相對應的高度上延伸。而且,如圖7的(a)、(b)所示,當設置在第三頂點上的第三高度調節部分522a在Z軸長度上延伸,以在Z軸方向上提升光罩固持器510的第三頂點時,光罩固持器510的XY平面具有某一傾角,所述第三頂點以該傾角設置在相對高於其他 頂點的高度處。此處,作為設置在第四頂點上的支撐主體521的彈簧可以延伸,並且因此設置在第二頂點上的第二高度調節部分522b也可以在與第四頂點的高度相對應的高度上延伸。 Therefore, when the height of a certain vertex is raised or lowered on the Z axis, the inclination of the XY plane of the reticle holder 510 may vary. For example, as shown in (a) and (b) of FIG. 6, the first height adjusting portion 522a disposed on the first vertex extends over the length of the Z axis to lift the mask holder in the Z-axis direction. At the first vertex of 510, the XY plane of the reticle holder 510 has a certain tilt angle at which the first apex is disposed at a height relatively higher than the other vertices. Here, the support body 521 (for example, a spring) disposed on the fourth vertex extends, and thus the second height adjustment portion 522b disposed on the second vertex may also extend at a height corresponding to the height of the fourth vertex . Further, as shown in (a) and (b) of FIG. 7, the third height adjusting portion 522a disposed on the third apex extends over the Z-axis length to lift the reticle holder 510 in the Z-axis direction. At the third vertex, the XY plane of the reticle holder 510 has a certain inclination angle, and the third apex is set at the inclination angle relatively higher than the other The height of the vertices. Here, the spring as the support body 521 disposed on the fourth vertex may extend, and thus the second height adjustment portion 522b disposed on the second vertex may also extend at a height corresponding to the height of the fourth vertex.

因此,當替換光罩M之後雷射光束的焦點變化時,設置在第一、第二和第三頂點上的高度調節部分522可以經控制以調節光罩固持器510的XY平面的傾角,由此將雷射光束的焦點恢復到其原始狀態。由於光罩固持器510的XY平面的傾角變化意味著光罩M的XY平面的變化,因此穿過光罩M的雷射光束的焦點可以通過光罩M的傾角的變化得到修正。因此,即使替換光罩,光罩也可以被載入到與光罩先前所設置的位置最大程度地接近的位置上。 Therefore, when the focus of the laser beam changes after the replacement of the mask M, the height adjustment portion 522 disposed at the first, second, and third vertices can be controlled to adjust the inclination of the XY plane of the reticle holder 510 by This restores the focus of the laser beam to its original state. Since the change in the inclination of the XY plane of the reticle holder 510 means a change in the XY plane of the reticle M, the focus of the laser beam passing through the reticle M can be corrected by the change in the inclination of the reticle M. Therefore, even if the reticle is replaced, the reticle can be loaded to a position that is most close to the position previously provided by the reticle.

如圖2所示,照相機單元800提供於示例性實施例中,以便在替換光罩之後檢測雷射光束的焦點的變化。照相機單元800為穿過設置在基板支撐件上的基板的雷射光束拍照,以產生雷射光束穿透圖像。照相機單元800設置在某一區域中的基板支撐件200中,在所述區域中,雷射光束經照射以通過使用照相機成像感測器捕獲穿過基板的雷射光束的圖像。因此,照相機單元800可以捕獲穿過基板W的經照射的雷射光束的圖像,以產生雷射光束穿透圖像。紅外線(infrared,IR)照相機、近紅外線(Near-infrared,NIR)照相機可以被實現為照相機單元800。此處,10倍透鏡、濾光鏡等等可以應用於照相機單元800。 As shown in FIG. 2, camera unit 800 is provided in an exemplary embodiment to detect a change in focus of the laser beam after replacing the reticle. Camera unit 800 takes a picture of a laser beam passing through a substrate disposed on a substrate support to produce a laser beam penetration image. The camera unit 800 is disposed in a substrate support 200 in a region in which a laser beam is illuminated to capture an image of a laser beam passing through the substrate by using a camera imaging sensor. Thus, camera unit 800 can capture an image of the illuminated laser beam passing through substrate W to produce a laser beam penetration image. An infrared (IR) camera, a near-infrared (NIR) camera, may be implemented as the camera unit 800. Here, a 10x lens, a filter, or the like can be applied to the camera unit 800.

當雷射光束穿透圖像偏離參考焦點圖像時,控制單元600 控制光罩支撐主體移動單元700以改變光罩固持器510的XY平面的傾角,以使得雷射光束穿透圖像與參考焦點圖像匹配。在替換光罩之前,控制單元600存儲集中在記憶體中的參考焦點圖像。由於雷射光束以線形照射,因此其中雷射光束的外形具有良好對比度的狀態可以通過參考焦點圖像來確定。當在替換光罩固持器510後通過捕獲穿過基板的雷射光束的圖像獲取的雷射光束穿透圖像偏離參考焦點圖像時,光罩固持器510的XY平面的傾角發生變化以使焦點與參考焦點匹配。參考焦點圖像的對比度可以通過多種方法進行比較,例如,比較線的厚度的方法以及比較對比度的方法。比較線的厚度的方法是確定成像的雷射光束穿透圖像的線的厚度和參考焦點圖像的線的厚度是否超過臨界值的方法。而且,比較對比度的方法是確定成像的雷射光束穿透圖像的線的對比度是否超過參考焦點圖像的臨界值的方法。 When the laser beam penetration image deviates from the reference focus image, the control unit 600 The control reticle supports the body moving unit 700 to change the inclination of the XY plane of the reticle holder 510 such that the laser beam penetration image matches the reference focus image. The control unit 600 stores a reference focus image concentrated in the memory before replacing the reticle. Since the laser beam is illuminated in a line shape, a state in which the shape of the laser beam has a good contrast can be determined by referring to the focus image. When the laser beam penetration image acquired by capturing the image of the laser beam passing through the substrate after the reticle holder 510 is displaced from the reference focus image, the inclination of the XY plane of the reticle holder 510 is changed to Match the focus to the reference focus. The contrast of the reference focus image can be compared by various methods, such as a method of comparing the thickness of the line and a method of comparing the contrast. The method of comparing the thicknesses of the lines is a method of determining whether the thickness of the line through which the imaged laser beam penetrates the image and the thickness of the line of the reference focus image exceed a critical value. Moreover, the method of comparing contrast is a method of determining whether the contrast of the line of the imaged laser beam that penetrates the image exceeds the critical value of the reference focus image.

當確定偏離臨界值時,控制單元600可以相對於光罩固持器修正XY平面的傾角。舉例來說,在雷射光束穿透圖像和參考焦點圖像中(其中每一者具有線形),當雷射光束穿透圖像具有大於參考焦點圖像的厚度時,控制單元600提升光罩固持器510的第一、第二和第三頂點中的至少一者,以改變光罩固持器510的XY平面的傾度。類似地,當雷射光束穿透圖像具有小於參考焦點圖像的厚度時,控制單元600使光罩固持器510的第一、第二和第三頂點中的至少一者能夠降低,由此改變光罩固持器510的XY平面的傾角。 When it is determined that the threshold value is deviated, the control unit 600 may correct the inclination of the XY plane with respect to the reticle holder. For example, in the laser beam penetration image and the reference focus image (each of which has a line shape), when the laser beam penetration image has a thickness greater than the reference focus image, the control unit 600 boosts the light. At least one of the first, second, and third vertices of the hood holder 510 is adapted to change the inclination of the XY plane of the reticle holder 510. Similarly, when the laser beam penetration image has a thickness smaller than the reference focus image, the control unit 600 enables at least one of the first, second, and third vertices of the reticle holder 510 to be lowered, thereby The inclination of the XY plane of the reticle holder 510 is changed.

當在照相機單元800中成像的雷射光束穿透圖像偏離參考位置時,控制單元600可以在X軸和Y軸方向上移動支撐光罩固持器的光罩載物台530,並且使光罩載物台530旋轉。也就是說,當雷射光束穿透圖像偏離先前存儲的參考位置時,控制單元600控制光罩載物台移動部分,以在X軸和Y軸方向上移動光罩載物台530並且使光罩載物台530旋轉,以使得雷射光束穿透圖像與參考位置匹配。參考位置表示基於基板支撐件的平面座標的參考焦點圖像的位置資訊。當聚焦時,照射到基板上的具有線形的雷射光束的位置資訊被註冊為參考位置。隨後,當雷射光束的位置由於光罩固持器的替換而偏離參考位置處的臨界值時,控制單元在X軸和Y軸方向上移動光罩載物台530並且使光罩載物台530旋轉,以調節雷射光束的位置。 When the laser beam imaging image imaged in the camera unit 800 deviates from the reference position, the control unit 600 may move the reticle stage 530 supporting the reticle holder in the X-axis and Y-axis directions, and make the reticle The stage 530 rotates. That is, when the laser beam penetration image deviates from the previously stored reference position, the control unit 600 controls the reticle stage moving portion to move the reticle stage 530 in the X-axis and Y-axis directions and The reticle stage 530 is rotated such that the laser beam penetration image matches the reference position. The reference position represents position information of the reference focus image based on the plane coordinates of the substrate support. When focusing, positional information of a laser beam having a line shape irradiated onto the substrate is registered as a reference position. Subsequently, when the position of the laser beam deviates from the critical value at the reference position due to replacement of the reticle holder, the control unit moves the reticle stage 530 in the X-axis and Y-axis directions and causes the reticle stage 530 Rotate to adjust the position of the laser beam.

在示例性實施例中,可以對光罩支撐主體的傾角進行調節,以在即使替換光罩的情況下也能防止雷射光束的焦點和位置發生變化。 In an exemplary embodiment, the tilt angle of the reticle support body can be adjusted to prevent the focus and position of the laser beam from changing even if the reticle is replaced.

儘管已參考具體實施例描述了用於修正傾角的設備以及基板處理設備,但是它們不限於此。因此,所屬領域的技術人員將容易理解,在不脫離由所附權利要求書界定的本發明的精神和範圍的情況下,可以對其做出各種修改和改變。 Although the apparatus for correcting the tilt angle and the substrate processing apparatus have been described with reference to the specific embodiments, they are not limited thereto. It will be apparent to those skilled in the art that various modifications and changes can be made without departing from the spirit and scope of the invention as defined by the appended claims.

10‧‧‧基板處理設備 10‧‧‧Substrate processing equipment

100‧‧‧腔室 100‧‧‧ chamber

200‧‧‧基板支撐件 200‧‧‧Substrate support

300‧‧‧雷射源 300‧‧‧Laser source

350‧‧‧反射鏡 350‧‧‧Mirror

400‧‧‧投影透鏡 400‧‧‧Projection lens

500‧‧‧光罩支撐主體 500‧‧‧Photomask support body

510‧‧‧光罩固持器 510‧‧‧Photomask Holder

510a‧‧‧邊緣 Edge of 510a‧‧

520‧‧‧傾角變化模組 520‧‧‧Dip Change Module

530‧‧‧光罩載物台 530‧‧‧Photomask stage

600‧‧‧控制單元 600‧‧‧Control unit

700‧‧‧光罩支撐主體移動單元 700‧‧‧Photomask support body mobile unit

800‧‧‧照相機單元 800‧‧‧ camera unit

M‧‧‧光罩 M‧‧‧Photo Mask

W‧‧‧基板 W‧‧‧Substrate

Claims (13)

一種用於修正光罩的傾角的設備,其特徵在於所述設備包括:光罩支撐主體,所述光罩支撐主體經配置以支撐其上形成有具有開口的圖案的光罩;光罩支撐主體移動單元,所述光罩支撐主體移動單元經配置以改變所述光罩支撐主體的XY平面的傾角;照相機單元,所述照相機單元為穿過所述光罩的所述圖案的所述開口以及穿過設置在基板支撐件上的基板的雷射光束拍照,以產生雷射光束穿透圖像;以及控制單元,所述控制單元經配置以控制所述光罩支撐主體移動單元,由此改變所述光罩的所述XY平面的所述傾角,以使得當所述雷射光束穿透圖像偏離參考焦點圖像時,所述雷射光束穿透圖像與所述參考焦點圖像匹配。 An apparatus for correcting a tilt angle of a reticle, characterized in that the apparatus comprises: a reticle support body configured to support a reticle having a pattern having an opening formed thereon; the reticle support body a moving unit, the reticle support body moving unit configured to change an inclination of an XY plane of the reticle support body; a camera unit that is the opening through the pattern of the reticle and Photographing a laser beam passing through a substrate disposed on the substrate support to produce a laser beam penetration image; and a control unit configured to control the reticle support body moving unit, thereby changing The tilt angle of the XY plane of the reticle such that when the laser beam penetration image deviates from a reference focus image, the laser beam penetration image matches the reference focus image . 如申請專利範圍第1項所述的設備,其中所述照相機單元設置在所述基板支撐件中。 The apparatus of claim 1, wherein the camera unit is disposed in the substrate support. 如申請專利範圍第2項所述的設備,其中所述照相機單元包括紅外線照相機和近紅外線照相機中的一者。 The apparatus of claim 2, wherein the camera unit comprises one of an infrared camera and a near infrared camera. 如申請專利範圍第1項所述的設備,其中所述光罩支撐主體包括:光罩固持器,所述光罩固持器具有中心部分穿透的框架形狀,所述光罩固持器具有第一頂點、第二頂點、第三頂點和第四 頂點,其中所述光罩放置在所述光罩固持器上,並且所述光罩固持器的所述XY平面的傾角是變化的;光罩狀態,所述光罩狀態經配置以支撐其頂部表面上的所述光罩固持器;以及傾角變化模組,所述傾角變化模組經配置以單獨地調節所述光罩固持器的所述頂點的Z軸高度,以改變所述XY平面的所述傾角。 The apparatus of claim 1, wherein the reticle support body comprises: a reticle holder having a central portion penetrating frame shape, the reticle holder having a first Vertex, second vertex, third vertex, and fourth a vertex, wherein the reticle is placed on the reticle holder, and an inclination of the XY plane of the reticle holder is varied; a reticle state, the reticle state configured to support a top thereof a reticle holder on the surface; and a tilt variation module configured to individually adjust a Z-axis height of the apex of the reticle holder to change the XY plane The inclination angle. 如申請專利範圍第4項所述的設備,其中所述傾角變化模組包括:高度調節部分,所述高度調節部分經配置以使所述光罩固持器的所述第一頂點、所述第二頂點和所述第三頂點的所述Z軸高度能夠單獨地升高或降低;以及支撐主體,所述支撐主體經配置以將所述光罩固持器的所述第四頂點連接到光罩載物臺上。 The apparatus of claim 4, wherein the tilt angle change module comprises: a height adjustment portion configured to cause the first vertex of the reticle holder, the first The Z-axis height of the two vertices and the third apex can be raised or lowered individually; and a support body configured to connect the fourth apex of the reticle holder to the reticle On the stage. 如申請專利範圍第5項所述的設備,其中所述高度調節部分是在其縱向方向上長度可變地調節的馬達,並且其縱向方向上的兩端分別連接到所述光罩載物台和所述光罩固持器的所述頂點上。 The apparatus of claim 5, wherein the height adjustment portion is a motor whose length is variably adjusted in a longitudinal direction thereof, and both ends of the longitudinal direction thereof are respectively connected to the reticle stage And on the apex of the reticle holder. 如申請專利範圍第5項所述的設備,其中所述高度調節部分包括:第一高度調節部分,所述第一高度調節部分經配置以使所述光罩固持器的所述第一頂點的所述Z軸高度能夠升高或降低; 第二高度調節部分,所述第二高度調節部分經配置以使所述光罩固持器的所述第二頂點的所述Z軸高度能夠升高或降低;以及第三高度調節部分,所述第三高度調節部分經配置以使所述光罩固持器的所述第三頂點的所述Z軸高度能夠升高或降低。 The apparatus of claim 5, wherein the height adjustment portion comprises: a first height adjustment portion configured to cause the first apex of the reticle holder The Z-axis height can be raised or lowered; a second height adjustment portion configured to enable the Z-axis height of the second apex of the reticle holder to be raised or lowered; and a third height adjustment portion, The third height adjustment portion is configured to enable the Z-axis height of the third apex of the reticle holder to be raised or lowered. 如申請專利範圍第5項所述的設備,其中所述光罩支撐主體移動單元進一步包括光罩載物台移動部分,所述光罩載物台移動部分經配置以在X軸和Y軸方向上移動所述光罩載物台並且使所述光罩載物台旋轉。 The apparatus of claim 5, wherein the reticle support body moving unit further comprises a reticle stage moving portion configured to be in the X-axis and the Y-axis direction The reticle stage is moved up and the reticle stage is rotated. 如申請專利範圍第8項所述的設備,其中當所述雷射光束穿透圖像偏離參考位置時,所述光罩載物台移動部分經控制以在X軸和Y軸方向上移動所述光罩載物台並且使所述光罩載物台旋轉,以使得所述雷射光束穿透圖像與所述參考位置匹配。 The apparatus of claim 8, wherein the reticle stage moving portion is controlled to move in the X-axis and Y-axis directions when the laser beam penetration image deviates from the reference position The reticle stage is rotated and the reticle stage is rotated such that the laser beam penetration image matches the reference position. 如申請專利範圍第5項所述的設備,其中所述雷射光束穿透圖像和所述參考焦點圖像中的每一者具有線形,並且當所述雷射光束穿透圖像具有大於所述參考焦點圖像的厚度時,所述控制單元使所述光罩固持器的所述第一頂點、所述第二頂點和所述第三頂點中的至少一者能夠升高。 The apparatus of claim 5, wherein each of the laser beam penetration image and the reference focus image has a line shape, and when the laser beam penetration image has a larger value The control unit enables at least one of the first vertex, the second vertex, and the third vertex of the reticle holder to be raised when the thickness of the reference focus image is referenced. 如申請專利範圍第5項所述的設備,其中所述雷射光束穿透圖像和所述參考焦點圖像中的每一者具有線形,並且當所述雷射光束穿透圖像具有小於所述參考焦點圖像的厚度時,所述控制單元使所述光罩固持器的所述第一頂點、所述第二頂點和所述 第三頂點中的至少一者能夠降低。 The apparatus of claim 5, wherein each of the laser beam penetration image and the reference focus image has a line shape, and when the laser beam penetration image has a smaller value The control unit causes the first vertex, the second vertex, and the photo of the reticle holder when the thickness of the reference focus image is referenced At least one of the third vertices can be lowered. 一種基板處理設備,其特徵在於包括:腔室,所述腔室具有基板在其中圖案化的內部空間;基板支撐件,所述基板支撐件設置在所述內部空間中以支撐所述基板;雷射源,所述雷射源經配置以產生雷射光束;光罩支撐主體,所述光罩支撐主體設置在所述雷射源與所述基板支撐件之間,以支撐其上形成有具有開口的圖案的光罩;光罩支撐主體移動單元,所述光罩支撐主體移動單元經配置以改變所述光罩支撐主體的XY平面的傾角;照相機單元,所述照相機單元經配置以為穿過所述光罩的所述圖案的所述開口以及穿過設置在所述基板支撐件上的所述基板的所述雷射光束拍照,以產生雷射光束穿透圖像;以及控制單元,所述控制單元經配置以控制所述光罩支撐主體移動單元,由此改變所述光罩的所述XY平面的所述傾角,以使得當所述雷射光束穿透圖像偏離參考焦點圖像時,所述雷射光束穿透圖像與所述參考焦點圖像匹配。 A substrate processing apparatus characterized by comprising: a chamber having an inner space in which a substrate is patterned; a substrate support, the substrate support being disposed in the inner space to support the substrate; a source of light, the laser source configured to generate a laser beam; a reticle supporting body disposed between the laser source and the substrate support to support thereon having a mask of the open pattern; the reticle supports a body moving unit configured to change an inclination of an XY plane of the reticle support body; a camera unit configured to pass through The opening of the pattern of the reticle and the laser beam passing through the substrate disposed on the substrate support are photographed to generate a laser beam penetration image; and a control unit The control unit is configured to control the reticle support body moving unit, thereby changing the tilt angle of the XY plane of the reticle such that when the laser beam penetrates an image The laser beam penetration image matches the reference focus image when the focus image is tested. 如申請專利範圍第12項所述的基板處理設備,其中所述光罩支撐主體移動單元在X軸和Y軸方向上移動所述光罩支撐主體並且使光罩支撐件旋轉。 The substrate processing apparatus of claim 12, wherein the reticle support body moving unit moves the reticle support body in the X-axis and Y-axis directions and rotates the reticle support.
TW103129254A 2013-08-28 2014-08-26 Apparatus for amending tilt of mask and substrate processing apparatus TWI544293B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130102478A KR101825091B1 (en) 2013-08-28 2013-08-28 Apparatus for amending tilt and method for processing substrate

Publications (2)

Publication Number Publication Date
TW201508424A TW201508424A (en) 2015-03-01
TWI544293B true TWI544293B (en) 2016-08-01

Family

ID=52972590

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103129254A TWI544293B (en) 2013-08-28 2014-08-26 Apparatus for amending tilt of mask and substrate processing apparatus

Country Status (3)

Country Link
KR (1) KR101825091B1 (en)
CN (1) CN104423146B (en)
TW (1) TWI544293B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105159037B (en) * 2015-09-30 2017-06-30 合肥芯碁微电子装备有限公司 A kind of angle calibration method of direct-write type lithography machine pattern generator
JP6860429B2 (en) * 2017-06-07 2021-04-14 株式会社ディスコ Laser processing method and laser processing equipment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000232061A (en) * 1999-02-12 2000-08-22 Nikon Corp Aligner and exposure method
KR101011779B1 (en) * 2008-12-19 2011-02-07 에이피시스템 주식회사 Vision system for substrate alignment apparatus and method for focusing the same
KR200484209Y1 (en) * 2011-06-17 2017-08-11 어플라이드 머티어리얼스, 인코포레이티드 Cvd mask alignment for oled processing

Also Published As

Publication number Publication date
TW201508424A (en) 2015-03-01
KR20150025170A (en) 2015-03-10
KR101825091B1 (en) 2018-02-02
CN104423146B (en) 2019-10-01
CN104423146A (en) 2015-03-18

Similar Documents

Publication Publication Date Title
TWI670131B (en) Laser processing device
JP2006176809A (en) Method for aligning mask with substrate, method for vapor-depositing organic thin film, and aligning device
US20180141125A1 (en) Laminating and shaping apparatus
JP5890139B2 (en) Drawing apparatus and focus adjustment method thereof
TWI544293B (en) Apparatus for amending tilt of mask and substrate processing apparatus
TW200932409A (en) Laser processing device
JP2010067705A (en) Alignment method and alignment device
JP2015222417A (en) Apparatus and method for exposure
JP2010045099A (en) Display method for alignment mark image, and alignment device
TWI612702B (en) Laser apparatus and laser thermal imaging method
KR102508236B1 (en) Mark detector, alignment apparatus, film forming apparatus, method of detecting mark, and film forming method
JP3662542B2 (en) Laser processing apparatus and deviation correction method therefor
TW201636588A (en) Laser beam inspection method
US12124178B2 (en) Lithography system and method
JP2021100766A (en) Laser output device
JP6157093B2 (en) Exposure apparatus, exposure method, and device manufacturing method
KR20180037590A (en) Assist exposure apparatus and method of obtaining exposure distribution
TW201737327A (en) Laser processing device continuing expected processing even when a laser beam irradiated by a laser beam irradiation means offsets from a center of a partition predetermined line
JP2009194147A (en) Wafer exposure apparatus and wafer exposure method
KR102611765B1 (en) System and method for overlay error reduction
JP2005081392A (en) Laser beam machining method and device
JP6896913B2 (en) Laser processing equipment
JP2007102580A (en) Positioning method and positioning apparatus
JP7309277B2 (en) POSITION ADJUSTMENT METHOD AND POSITION ADJUSTMENT DEVICE
TWI354187B (en)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees