TWI542866B - 用於使用掃瞄式電子顯微鏡圖像之三維映射之方法、設備及電腦軟體產品 - Google Patents
用於使用掃瞄式電子顯微鏡圖像之三維映射之方法、設備及電腦軟體產品 Download PDFInfo
- Publication number
- TWI542866B TWI542866B TW103124289A TW103124289A TWI542866B TW I542866 B TWI542866 B TW I542866B TW 103124289 A TW103124289 A TW 103124289A TW 103124289 A TW103124289 A TW 103124289A TW I542866 B TWI542866 B TW I542866B
- Authority
- TW
- Taiwan
- Prior art keywords
- detector
- sample
- processor
- detectors
- emitted
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T15/00—3D [Three Dimensional] image rendering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D18/00—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00
- G01D18/008—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00 with calibration coefficients stored in memory
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
- H01J2237/24465—Sectored detectors, e.g. quadrants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/282—Determination of microscope properties
- H01J2237/2826—Calibration
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Computer Graphics (AREA)
- Theoretical Computer Science (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/365,238 US8604427B2 (en) | 2012-02-02 | 2012-02-02 | Three-dimensional mapping using scanning electron microscope images |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201441606A TW201441606A (zh) | 2014-11-01 |
| TWI542866B true TWI542866B (zh) | 2016-07-21 |
Family
ID=48902085
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103124289A TWI542866B (zh) | 2012-02-02 | 2013-02-01 | 用於使用掃瞄式電子顯微鏡圖像之三維映射之方法、設備及電腦軟體產品 |
| TW102103929A TWI493180B (zh) | 2012-02-02 | 2013-02-01 | 用於使用掃瞄式電子顯微鏡圖像之三維映射之方法、設備及電腦軟體產品 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102103929A TWI493180B (zh) | 2012-02-02 | 2013-02-01 | 用於使用掃瞄式電子顯微鏡圖像之三維映射之方法、設備及電腦軟體產品 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US8604427B2 (enExample) |
| JP (2) | JP5793155B2 (enExample) |
| KR (2) | KR101477014B1 (enExample) |
| TW (2) | TWI542866B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI733425B (zh) * | 2019-07-04 | 2021-07-11 | 日商日立全球先端科技股份有限公司 | 尺寸測量裝置、尺寸測量程式及半導體製造系統 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8604427B2 (en) * | 2012-02-02 | 2013-12-10 | Applied Materials Israel, Ltd. | Three-dimensional mapping using scanning electron microscope images |
| US9858658B2 (en) | 2012-04-19 | 2018-01-02 | Applied Materials Israel Ltd | Defect classification using CAD-based context attributes |
| US9595091B2 (en) | 2012-04-19 | 2017-03-14 | Applied Materials Israel, Ltd. | Defect classification using topographical attributes |
| US20140095097A1 (en) * | 2012-09-28 | 2014-04-03 | International Business Machines Corporation | System and method for determining line edge roughness |
| US8901492B1 (en) * | 2013-07-16 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional semiconductor image reconstruction apparatus and method |
| US9588066B2 (en) * | 2014-01-23 | 2017-03-07 | Revera, Incorporated | Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) |
| EP3161462B1 (en) * | 2014-06-24 | 2021-04-14 | Nova Measuring Instruments, Inc. | Feed-forward of multi-layer and multi-process information using xps and xrf technologies |
| JP6272487B2 (ja) | 2014-07-28 | 2018-01-31 | 株式会社日立製作所 | 荷電粒子線装置、シミュレーション方法およびシミュレーション装置 |
| US9715724B2 (en) | 2014-07-29 | 2017-07-25 | Applied Materials Israel Ltd. | Registration of CAD data with SEM images |
| ES2567379B1 (es) * | 2014-10-21 | 2017-02-03 | Universidad Carlos Iii De Madrid | Microscopio y procedimiento para la generación de imágenes 3D de una colección demuestras |
| KR102566134B1 (ko) | 2015-12-07 | 2023-08-10 | 삼성전자주식회사 | 반도체 소자의 3d 프로파일링 시스템 및 이의 동작 방법 |
| EP3616230B1 (en) * | 2017-04-27 | 2023-08-02 | King Abdullah University Of Science And Technology | Transmission electron microscope sample alignment system and method |
| US10748272B2 (en) | 2017-05-18 | 2020-08-18 | Applied Materials Israel Ltd. | Measuring height difference in patterns on semiconductor wafers |
| JP6851345B2 (ja) | 2018-05-24 | 2021-03-31 | 日本電子株式会社 | 荷電粒子線装置および画像取得方法 |
| LU100806B1 (en) * | 2018-05-30 | 2019-12-02 | Luxembourg Inst Science & Tech List | Joint nanoscale three-dimensional imaging and chemical analysis |
| US11139142B2 (en) * | 2019-05-23 | 2021-10-05 | Applied Materials, Inc. | High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy |
| JP7159128B2 (ja) | 2019-08-08 | 2022-10-24 | 株式会社日立ハイテク | 荷電粒子線装置 |
| JP7173937B2 (ja) | 2019-08-08 | 2022-11-16 | 株式会社日立ハイテク | 荷電粒子線装置 |
| KR102771899B1 (ko) | 2019-09-03 | 2025-02-25 | 삼성전자주식회사 | 주사 전자 현미경 장치 및 그의 동작 방법 |
| JP2023535192A (ja) * | 2020-07-29 | 2023-08-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 検査装置における信号電子検出のためのシステム及び方法 |
| JP7364540B2 (ja) * | 2020-08-05 | 2023-10-18 | 株式会社日立ハイテク | 画像処理システム |
| US12057336B2 (en) | 2020-12-16 | 2024-08-06 | Samsung Electronics Co., Ltd. | Estimating heights of defects in a wafer by scaling a 3D model using an artificial neural network |
| US11626267B2 (en) * | 2021-04-28 | 2023-04-11 | Applied Materials Israel Ltd. | Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage |
| JP7323574B2 (ja) * | 2021-06-03 | 2023-08-08 | 日本電子株式会社 | 荷電粒子線装置および画像取得方法 |
| CN120121657B (zh) * | 2025-03-11 | 2025-11-25 | 浙江大学 | 一种基于扫描电镜的原位三维表面重建方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE17772T1 (de) * | 1981-09-01 | 1986-02-15 | Huels Chemische Werke Ag | Verfahren zur gewinnung von oel aus einer unterirdischen lagerstaette. |
| JP3499690B2 (ja) * | 1996-09-13 | 2004-02-23 | 株式会社東芝 | 荷電粒子顕微鏡 |
| DE69901787T2 (de) * | 1999-03-31 | 2002-11-21 | Advantest Corp., Tokio/Tokyo | Verfahren und Vorrichtung zur Abbildung eines Oberflächenpotentials |
| US6573498B1 (en) * | 2000-06-30 | 2003-06-03 | Advanced Micro Devices, Inc. | Electric measurement of reference sample in a CD-SEM and method for calibration |
| WO2002103337A2 (en) * | 2001-06-15 | 2002-12-27 | Ebara Corporation | Electron beam apparatus and method for using said apparatus |
| DE10156275B4 (de) * | 2001-11-16 | 2006-08-03 | Leo Elektronenmikroskopie Gmbh | Detektoranordnung und Detektionsverfahren |
| US6930308B1 (en) | 2002-07-11 | 2005-08-16 | Kla-Tencor Technologies Corporation | SEM profile and surface reconstruction using multiple data sets |
| KR101015116B1 (ko) * | 2002-09-18 | 2011-02-16 | 에프이아이 컴파니 | 하전(荷電) 입자 빔 시스템 |
| JP3802525B2 (ja) * | 2003-10-10 | 2006-07-26 | 株式会社東芝 | 荷電粒子顕微鏡 |
| US7067808B2 (en) * | 2003-10-14 | 2006-06-27 | Topcon Corporation | Electron beam system and electron beam measuring and observing method |
| JP4229799B2 (ja) * | 2003-10-14 | 2009-02-25 | 株式会社トプコン | 電子線測定または観察装置、電子線測定または観察方法 |
| WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
| JP4966719B2 (ja) * | 2007-04-11 | 2012-07-04 | 株式会社日立ハイテクノロジーズ | 校正用標準部材及びその作製方法、並びにそれを用いた電子ビーム装置 |
| JP4936985B2 (ja) | 2007-05-14 | 2012-05-23 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡およびそれを用いた三次元形状測定装置 |
| KR101050438B1 (ko) * | 2008-11-10 | 2011-07-19 | 주식회사 코캄 | 안전성이 우수한 리튬 이차전지용 양극 활물질 및 그 제조방법과 이를 포함하는 리튬 이차전지 |
| JP5698922B2 (ja) * | 2009-06-26 | 2015-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 電子デバイスを形成する方法 |
| US8692214B2 (en) * | 2009-08-12 | 2014-04-08 | Hermes Microvision, Inc. | Charged particle beam inspection method |
| WO2012099635A2 (en) | 2010-10-28 | 2012-07-26 | President And Fellows Of Harvard College | Electron beam processing with condensed ice |
| DE102010053194A1 (de) * | 2010-12-03 | 2012-06-06 | Carl Zeiss Nts Gmbh | Teilchenstrahlgerät mit Ablenksystem |
| US20120223227A1 (en) * | 2011-03-04 | 2012-09-06 | Chien-Huei Chen | Apparatus and methods for real-time three-dimensional sem imaging and viewing of semiconductor wafers |
| US8604427B2 (en) * | 2012-02-02 | 2013-12-10 | Applied Materials Israel, Ltd. | Three-dimensional mapping using scanning electron microscope images |
| US8779357B1 (en) * | 2013-03-15 | 2014-07-15 | Fei Company | Multiple image metrology |
-
2012
- 2012-02-02 US US13/365,238 patent/US8604427B2/en active Active
-
2013
- 2013-02-01 JP JP2013031500A patent/JP5793155B2/ja active Active
- 2013-02-01 TW TW103124289A patent/TWI542866B/zh active
- 2013-02-01 TW TW102103929A patent/TWI493180B/zh active
- 2013-02-04 KR KR1020130012357A patent/KR101477014B1/ko active Active
- 2013-11-15 US US14/081,981 patent/US8946627B2/en active Active
-
2014
- 2014-07-03 KR KR1020140083073A patent/KR101686603B1/ko active Active
- 2014-08-26 JP JP2014171154A patent/JP6152077B2/ja active Active
-
2015
- 2015-01-30 US US14/609,768 patent/US9378923B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI733425B (zh) * | 2019-07-04 | 2021-07-11 | 日商日立全球先端科技股份有限公司 | 尺寸測量裝置、尺寸測量程式及半導體製造系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201441606A (zh) | 2014-11-01 |
| JP2013161795A (ja) | 2013-08-19 |
| JP6152077B2 (ja) | 2017-06-21 |
| KR20130089613A (ko) | 2013-08-12 |
| KR101686603B1 (ko) | 2016-12-14 |
| US20140074419A1 (en) | 2014-03-13 |
| KR101477014B1 (ko) | 2014-12-29 |
| US20130200255A1 (en) | 2013-08-08 |
| US9378923B2 (en) | 2016-06-28 |
| TW201337249A (zh) | 2013-09-16 |
| TWI493180B (zh) | 2015-07-21 |
| JP5793155B2 (ja) | 2015-10-14 |
| US8604427B2 (en) | 2013-12-10 |
| US20150136960A1 (en) | 2015-05-21 |
| JP2015008148A (ja) | 2015-01-15 |
| US8946627B2 (en) | 2015-02-03 |
| KR20140091512A (ko) | 2014-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI542866B (zh) | 用於使用掃瞄式電子顯微鏡圖像之三維映射之方法、設備及電腦軟體產品 | |
| TWI684000B (zh) | 產生檢查配方的方法及其系統 | |
| US9171364B2 (en) | Wafer inspection using free-form care areas | |
| JP6262942B2 (ja) | トポグラフィック属性を利用した欠陥分類 | |
| TW201531963A (zh) | 基於從標準參考影像判定之屬性之缺陷偵測及分類 | |
| CN104865276A (zh) | 在带电粒子显微镜中检查样本的方法 | |
| US8779357B1 (en) | Multiple image metrology | |
| TW201629811A (zh) | 判定用於樣本上之關注區域之座標 | |
| US10971325B2 (en) | Defect observation system and defect observation method for semiconductor wafer | |
| US20150016709A1 (en) | Pattern Sensing Device and Semiconductor Sensing System | |
| TWI879571B (zh) | 增強的截面特徵量測方法與系統 | |
| JP5966087B2 (ja) | パターン形状評価装置及び方法 | |
| JP2024012432A (ja) | 検査システム、及び非一時的コンピュータ可読媒体 | |
| CN116538951A (zh) | 利用几何模型进行3d临界尺寸测量 | |
| JP2014016239A (ja) | X線検査方法及びx線検査装置 | |
| TW202331772A (zh) | 決定聚焦帶電粒子束的束匯聚度的方法及帶電粒子束系統 | |
| JP6207893B2 (ja) | 試料観察装置用のテンプレート作成装置 | |
| Chen et al. | Robust surface reconstruction in sem with two bse detectors | |
| TW202542837A (zh) | 對半導體取樣圖像的串擾校正 | |
| WO2024224559A1 (ja) | 荷電粒子線装置および三次元形状測定方法 | |
| Yin et al. | Micron and nanometer measuring methods based on metrological scanning electron microscope |