TWI537835B - Memory cards and electronic machines - Google Patents

Memory cards and electronic machines Download PDF

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Publication number
TWI537835B
TWI537835B TW099142382A TW99142382A TWI537835B TW I537835 B TWI537835 B TW I537835B TW 099142382 A TW099142382 A TW 099142382A TW 99142382 A TW99142382 A TW 99142382A TW I537835 B TWI537835 B TW I537835B
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Taiwan
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memory card
terminals
interconnect
memory
terminal
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TW099142382A
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Chinese (zh)
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TW201140463A (en
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姜真泰
金起善
李東陽
孔道一
李晟熏
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三星電子股份有限公司
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings

Description

記憶卡以及電子機器Memory card and electronic machine

本文中之本發明是關於記憶卡以及電子機器，且更特定言之，是關於可卸除式記憶卡以及包含可被插入可卸除式記憶卡之插口的電子機器。The invention herein relates to memory cards and electronic machines and, more particularly, to removable memory cards and electronic machines including sockets that can be inserted into removable memory cards.

本申請案主張2010年2月5日申請之韓國專利申請案第10-2010-0010989號之優先權並且主張2009年12月7日申請之美國臨時申請案第61/282,041號之權利，兩申請案中之每一者之全部內容以引用方式併入本文中。The present application claims the priority of the Korean Patent Application No. 10-2010-0010989, filed on Feb. 5, 2010, and the benefit of the benefit of U.S. Provisional Application No. 61/282,041, filed on Dec. 7, 2009. The entire contents of each of the examples are incorporated herein by reference.

記憶卡為結合各種電子機器(諸如，電腦、數位相機、數位攝錄一體機、蜂巢式電話以及個人數位助理(personal digital assistant,PDA))而使用以儲存或提供資料(諸如，影像資料以及聲音資料)之可卸除式卡。存在許多種類之記憶卡，諸如，記憶棒卡(memory stick card)、安全數位卡(secure digital card)、緊密快閃卡(compact flash card)以及智慧媒體卡(smart media card)。非揮發性記憶體通常用作記憶卡，並且快閃記憶體為最廣泛使用之非揮發性記憶體。Memory cards are used in conjunction with various electronic machines (such as computers, digital cameras, digital camcorders, cellular phones, and personal digital assistants (PDAs)) to store or provide data (such as image data and sound). Data) removable card. There are many types of memory cards, such as a memory stick card, a secure digital card, a compact flash card, and a smart media card. Non-volatile memory is commonly used as a memory card, and flash memory is the most widely used non-volatile memory.

本發明提供新類型之記憶卡。The present invention provides a new type of memory card.

發明概念之實例實施例提供記憶卡。在一些實例實施例中，所述記憶卡可包含：正面、背面、第一側面、第二側面、頂面以及底面；所述頂面以及所述底面中之至少一者上的第一組互連端子，所述第一組互連端子經組態以操作性地與外部電子機器連接。所述第一組互連端子中之每一者可具有平行於第一方向之長度，並且所述第一組互連端子是沿著垂直於所述第一方向之第二方向，並且所述第一組互連端子中之至少一些可分別與所述正面間隔開大於其長度的距離。Example embodiments of the inventive concept provide a memory card. In some example embodiments, the memory card may include: a front side, a back side, a first side, a second side, a top side, and a bottom surface; and the first group of the at least one of the top surface and the bottom surface Connected to the terminals, the first set of interconnect terminals are configured to operatively interface with an external electronic machine. Each of the first set of interconnecting terminals may have a length parallel to the first direction, and the first set of interconnecting terminals are along a second direction perpendicular to the first direction, and At least some of the first set of interconnecting terminals may be spaced apart from the front side by a distance greater than their length, respectively.

在發明概念之其他實例實施例中，提供電子機器。所述電子機器包括插口(socket)，其中所述插口包含：第一組互連端子，其經組態以操作性地與第一記憶卡連接；以及第二組互連端子，其經組態以操作性地與第二記憶卡連接。所述第一組互連端子與所述第二組互連端子為平行的。In other example embodiments of the inventive concept, an electronic machine is provided. The electronic machine includes a socket, wherein the jack includes: a first set of interconnect terminals configured to operatively interface with a first memory card; and a second set of interconnect terminals configured It is operatively connected to the second memory card. The first set of interconnect terminals are parallel to the second set of interconnect terminals.

包含附圖以提供發明概念之進一步理解，並且將附圖併入於本說明書中並構成本說明書之一部分。諸圖說明發明概念之實例實施例並與描述一起用以解釋發明概念之實例實施例。The drawings are included to provide a further understanding of the inventive concepts, and are incorporated in the specification and constitute a part of this specification. The figures illustrate example embodiments of the inventive concepts and together with the description are used to explain example embodiments of the inventive concepts.

參看用於說明發明概念之實例實施例之附圖以便充分理解發明概念、其優點以及藉由實施發明概念而實現之目標。BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in FIG

在下文中，將藉由參看附圖以解釋實例實施例來詳細描述發明概念。在諸圖中，為清楚起見可放大層與區域之長度以及大小。在諸圖中，相同參考數字表示相同元件。Hereinafter, the inventive concept will be described in detail by explaining example embodiments with reference to the attached drawings. In the figures, the length and size of layers and regions may be exaggerated for clarity. In the figures, the same reference numerals indicate the same elements.

應理解，雖然術語第一、第二、第三等可在本文中用以描述各種元件，但此等元件不應受此等術語限制。此等元件用以區分一個元件與另一元件。因此，在不偏離發明概念之教示的情況下，下文論述之第一元件可稱為第二元件。It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, such elements are not limited by the terms. These elements are used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of the inventive concept.

應理解，當元件(諸如，層、區域或基板)被稱為在另一元件「上」、「連接至」或「耦接至」另一元件時，其可直接在另一元件上、直接連接至或耦接至另一元件，或可存在介入元件。相比而言，當元件被稱為「直接」在另一元件「上」、「直接連接至」或「直接耦接至」另一元件或層時，不存在介入元件或層。相同參考數字在全文中代表相同元件。如本文中所使用，術語「及/或」包含相關聯所列項目中之一或多者之任何以及所有組合。It will be understood that when an element (such as a layer, region or substrate) is referred to as "on", "connected" or "coupled" to another element, the Connected to or coupled to another component, or an intervening component may be present. In contrast, when an element is referred to as being "directly," "directly connected" or "directly connected" to another element or layer, there are no intervening elements or layers. The same reference numbers represent the same elements throughout the text. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

本文中所使用之術語僅出於描述特定實例實施例之目的且不欲限制發明概念。如本文中所使用，單數形式「一」意欲亦包含複數形式，除非上下文另有清楚指示。應進一步理解，術語「包括」及/或「包含」在用於本說明書中時，指定所述特徵、整數、步驟、操作、元件及/或組件之存在，但並不排除一個或多個其他特徵、整數、步驟、操作、元件、組件及/或其群組之存在或添加。The terminology used herein is for the purpose of describing particular example embodiments and the embodiments As used herein, the singular " " " It is to be understood that the terms "comprises" or "comprises" or "an" The presence or addition of features, integers, steps, operations, components, components, and/or groups thereof.

除非另有定義，否則本文中所使用之所有術語(包含科技術語)具有與一般熟習發明概念所屬領域之技術者通常理解之含義相同的含義。應進一步理解，諸如常用辭典中所定義之術語的術語應解釋為具有與其在相關技術之情形下之含義一致的含義，且將不會以理想化或過度正式之意義來解釋，除非本文中明確地如此定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning meaning meaning It should be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the related art, and will not be interpreted in an idealized or overly formal sense unless expressly stated herein. This is so defined.

圖1以及圖2為說明根據發明概念之實例實施例之記憶卡200的透視圖。圖3為沿圖1之線A-A'截取之剖視圖。圖1為說明記憶卡200之俯視透視圖，並且圖2為說明記憶卡200之仰視透視圖。在當前實例實施例中，記憶卡200可使用非揮發性記憶體。舉例而言，所述非揮發性記憶體可為快閃記憶體。1 and 2 are perspective views illustrating a memory card 200 in accordance with an example embodiment of the inventive concept. Figure 3 is a cross-sectional view taken along line A-A' of Figure 1. 1 is a top perspective view illustrating the memory card 200, and FIG. 2 is a bottom perspective view illustrating the memory card 200. In the current example embodiment, the memory card 200 can use non-volatile memory. For example, the non-volatile memory can be a flash memory.

參看圖1至圖3，記憶卡200包含電路板230、半導體晶片232以及模製部件220。半導體晶片232包含記憶體晶片234以及控制器晶片236。記憶體晶片234以及控制器晶片236可具有堆疊結構。舉例而言，各記憶體晶片234可疊置於彼此上，且該控制器晶片236可置放於最上記憶體晶片234之頂部上。在另一實例中，可僅使用一個記憶體晶片234。在另一實例中，記憶體晶片234可與控制器晶片236間隔開。控制器晶片236可小於記憶體晶片234。Referring to FIGS. 1 through 3, the memory card 200 includes a circuit board 230, a semiconductor wafer 232, and a molding member 220. The semiconductor wafer 232 includes a memory wafer 234 and a controller wafer 236. The memory wafer 234 and the controller wafer 236 may have a stacked structure. For example, each of the memory chips 234 may be stacked on each other, and the controller wafer 236 may be placed on top of the uppermost memory wafer 234. In another example, only one memory chip 234 can be used. In another example, memory chip 234 can be spaced apart from controller wafer 236. Controller wafer 236 can be smaller than memory chip 234.

電路板230包含被動組件(例如，圖17中所展示之被動組件739)。所述被動組件可包含電容器或暫存器。互連端子238形成於電路板230之外表面上以與外部電子裝置(例如，圖36中所展示之電子機器5100)電性連接。互連端子238中最接近第一側面245(稍後描述)之一者可為用於輸入/輸出(I/O)之電源互連端子。此外，導電跡線(未圖示)形成於電路板230上以電性連接晶片234以及236、互連端子238以及所述被動組件。模製部件220經設置以完全覆蓋半導體晶片232以及電路板230之頂表面。Circuit board 230 contains passive components (e.g., passive component 739 shown in Figure 17). The passive component can include a capacitor or a register. Interconnect terminals 238 are formed on the outer surface of circuit board 230 for electrical connection with external electronic devices (e.g., electronic device 5100 shown in FIG. 36). One of the interconnect terminals 238 closest to the first side 245 (described later) may be a power interconnect terminal for input/output (I/O). In addition, conductive traces (not shown) are formed on circuit board 230 to electrically connect wafers 234 and 236, interconnect terminals 238, and the passive components. The molded component 220 is configured to completely cover the semiconductor wafer 232 and the top surface of the circuit board 230.

當自外側檢視時，記憶卡200包含頂面241、底面242、正面243、背面244、第一側面245以及第二側面246。記憶卡200之正面243以及背面244彼此大致平行。此外，記憶卡200之頂面241以及底面242彼此大致平行，並且頂面241以及正面243彼此大致垂直。記憶卡200之第一側面245以及第二側面246彼此大致平行。第一側面245大致垂直於頂面241以及正面243。亦即，記憶卡200具有大致薄的平行六面體形狀。當自頂面檢視時，平行於第一側面245之方向將被稱為第一方向12，並且平行於正面243之方向將被稱為第二方向14。此外，垂直於第一方向12以及第二方向14之方向將被稱為第三方向16。The memory card 200 includes a top surface 241, a bottom surface 242, a front surface 243, a back surface 244, a first side surface 245, and a second side surface 246 when viewed from the outside. The front side 243 and the back side 244 of the memory card 200 are substantially parallel to each other. Further, the top surface 241 and the bottom surface 242 of the memory card 200 are substantially parallel to each other, and the top surface 241 and the front surface 243 are substantially perpendicular to each other. The first side 245 and the second side 246 of the memory card 200 are substantially parallel to each other. The first side 245 is generally perpendicular to the top surface 241 and the front surface 243. That is, the memory card 200 has a substantially thin parallelepiped shape. When viewed from the top surface, the direction parallel to the first side 245 will be referred to as the first direction 12, and the direction parallel to the front side 243 will be referred to as the second direction 14. Furthermore, the direction perpendicular to the first direction 12 and the second direction 14 will be referred to as the third direction 16.

標記(未圖示)可安置於頂面241上。所述標記可為貼紙或以墨水印刷。在記憶卡200之底面242處，曝露了互連端子238。互連端子238可安置於底面242之接近於正面243之區域處。互連端子238可沿著第二方向14而配置。此外，互連端子238可平行於第一方向12。A marker (not shown) can be placed on the top surface 241. The indicia can be a sticker or printed in ink. At the bottom surface 242 of the memory card 200, the interconnect terminal 238 is exposed. Interconnect terminal 238 can be disposed at a region of bottom surface 242 that is proximate to front side 243. The interconnect terminal 238 can be configured along the second direction 14. Furthermore, the interconnect terminal 238 can be parallel to the first direction 12.

互連端子238與正面243間隔一預定距離。所述預定距離可按照使得互連端子238可不疊置於大小類似於記憶卡200之不同記憶卡之互連端子(諸如，圖37之記憶卡5160之互連端子5162)上的方式而加以確定。舉例而言，不同記憶卡5160可為微型安全數位卡，其在底面的接近於正面之區域上具有互連端子。此外，所述預定距離可大於互連端子238之長度。互連端子238之長度可相等。互連端子238可彼此對準。或者，互連端子238中之一些可長於互連端子238中之其他者。在此狀況下，互連端子238中之面向背面244之末端可彼此對準。舉例而言，較長的互連端子238可為電源端子。The interconnect terminal 238 is spaced apart from the front side 243 by a predetermined distance. The predetermined distance may be determined in such a manner that the interconnect terminal 238 may not be stacked on an interconnect terminal of a different memory card size similar to the memory card 200 (such as the interconnect terminal 5162 of the memory card 5160 of FIG. 37). . For example, the different memory card 5160 can be a miniature secure digital card having interconnecting terminals on an area of the bottom surface proximate the front side. Moreover, the predetermined distance can be greater than the length of the interconnect terminal 238. The length of the interconnect terminals 238 can be equal. The interconnect terminals 238 can be aligned with each other. Alternatively, some of the interconnect terminals 238 may be longer than the other of the interconnect terminals 238. In this case, the ends of the interconnect terminals 238 facing the back surface 244 may be aligned with each other. For example, the longer interconnect terminal 238 can be a power supply terminal.

圖4以及圖5說明記憶卡300。圖4為說明記憶卡300之俯視透視圖，並且圖5為說明記憶卡300之仰視透視圖。記憶卡300具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡300之互連端子338的位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。突起312安置於記憶卡300之頂面341上。突起312可安置於頂面341的接近於記憶卡300之背面344之區域中。突起312可延伸至第一側面345以及第二側面346。此外，突起312可圓形化(rounded)並朝向正面343凸起。或者，當自頂面檢視時，突起312可具有矩形形狀。歸因於突起312，使用者可容易抓持記憶卡300。相對厚之裝置可安置於突起312下之記憶卡300之電路板上。4 and 5 illustrate the memory card 300. 4 is a top perspective view illustrating the memory card 300, and FIG. 5 is a bottom perspective view illustrating the memory card 300. The memory card 300 has a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1 through 3. The location of the interconnect terminal 338 of the memory card 300 can be similar to the interconnect terminal 238 of the memory card 200 illustrated in Figures 1-3. The protrusion 312 is disposed on the top surface 341 of the memory card 300. The protrusion 312 can be disposed in a region of the top surface 341 that is proximate to the back surface 344 of the memory card 300. The protrusion 312 can extend to the first side 345 and the second side 346. Additionally, the protrusions 312 can be rounded and convex toward the front side 343. Alternatively, the protrusions 312 may have a rectangular shape when viewed from the top surface. Due to the protrusions 312, the user can easily grasp the memory card 300. A relatively thick device can be placed on the circuit board of the memory card 300 under the protrusions 312.

圖6以及圖7說明記憶卡400。圖6為說明記憶卡400之俯視透視圖，並且圖7為說明記憶卡400之仰視透視圖。記憶卡400可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡400之互連端子438的位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。類似於圖4之記憶卡300之突起312的突起412可安置於記憶卡400之頂面441上。此外，記憶卡400包含處於正面443與第二側面446之間的斜面461，並且斜面461隨著其自正面443伸展至第二側面446而變得遠離第一側面445。斜面461可自頂面441延伸至底面442。6 and 7 illustrate the memory card 400. FIG. 6 is a top perspective view illustrating the memory card 400, and FIG. 7 is a bottom perspective view illustrating the memory card 400. The memory card 400 may have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1 through 3. The location of interconnect terminal 438 of memory card 400 can be similar to interconnect terminal 238 of memory card 200 illustrated in Figures 1-3. A protrusion 412 similar to the protrusion 312 of the memory card 300 of FIG. 4 can be disposed on the top surface 441 of the memory card 400. In addition, the memory card 400 includes a ramp 461 between the front side 443 and the second side 446, and the ramp 461 becomes away from the first side 445 as it extends from the front side 443 to the second side 446. The ramp 461 can extend from the top surface 441 to the bottom surface 442.

圖8至圖10說明記憶卡401。圖8為說明記憶卡401的仰視透視圖，且圖9以及圖10分別為圖8之記憶卡401之前視圖以及俯視圖，其用於說明記憶卡401之記憶體晶片434以及控制器晶片436。記憶卡401具有類似於圖6以及圖7中所說明之記憶卡400之形狀的形狀。然而，如圖8中所展示，斜面461a自記憶卡401之頂面441形成達到記憶卡401之預定深度。舉例而言，當突起412之厚度不包含於記憶卡401之厚度中時，所述預定深度可為記憶卡401之厚度的一半。或者，當突起412之厚度不包含於記憶卡401之厚度中時，所述預定深度可小於記憶卡401之厚度的一半。如圖9中所展示，記憶卡401包含模製部件420、電路板430以及被動組件439。8 to 10 illustrate the memory card 401. 8 is a bottom perspective view illustrating the memory card 401, and FIGS. 9 and 10 are a front view and a plan view, respectively, of the memory card 401 of FIG. 8 for explaining the memory chip 434 of the memory card 401 and the controller wafer 436. The memory card 401 has a shape similar to that of the memory card 400 illustrated in FIGS. 6 and 7. However, as shown in FIG. 8, the ramp 461a is formed from the top surface 441 of the memory card 401 to a predetermined depth of the memory card 401. For example, when the thickness of the protrusion 412 is not included in the thickness of the memory card 401, the predetermined depth may be half the thickness of the memory card 401. Alternatively, when the thickness of the protrusion 412 is not included in the thickness of the memory card 401, the predetermined depth may be less than half the thickness of the memory card 401. As shown in FIG. 9, the memory card 401 includes a molding part 420, a circuit board 430, and a passive component 439.

如上所述，控制器晶片436可小於記憶體晶片434。在此狀況下，當自頂面檢視記憶體晶片434時，記憶體晶片434可部分與斜面461a重疊，且當自頂面檢視控制器晶片436時，控制器晶片436可位於斜面461a外部。此外，當自第一側面445檢視記憶體晶片434時，記憶體晶片434可部分與斜面461a重疊。歸因於此，具有相對大的大小的記憶體晶片434可安置於包含斜面461a並且具有有限大小的記憶卡401中。Controller wafer 436 can be smaller than memory chip 434, as described above. In this case, the memory chip 434 may partially overlap the slope 461a when the memory wafer 434 is viewed from the top surface, and the controller wafer 436 may be located outside the slope 461a when the controller wafer 436 is viewed from the top surface. Moreover, when the memory wafer 434 is viewed from the first side 445, the memory wafer 434 may partially overlap the slope 461a. Due to this, the memory chip 434 having a relatively large size can be disposed in the memory card 401 including the slope 461a and having a limited size.

斜面(461、461a)可在使用者將記憶卡(400、401)插入至電子機器之插口中時防止反向插入。舉例而言，圖8之記憶卡401可與電子機器5300(參看圖39)一起使用，電子機器5300在插口5320(參看圖39)中包含對應於斜面461a之突起5360(參看圖39)。The ramps (461, 461a) prevent reverse insertion when the user inserts the memory card (400, 401) into the socket of the electronic machine. For example, the memory card 401 of FIG. 8 can be used with an electronic machine 5300 (see FIG. 39) that includes a protrusion 5360 (see FIG. 39) corresponding to the ramp 461a in the socket 5320 (see FIG. 39).

圖11以及圖12說明記憶卡500。圖11為說明記憶卡500之俯視透視圖，並且圖12為說明記憶卡500之仰視透視圖。記憶卡500可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡500之互連端子538的位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。類似於圖4之記憶卡300之突起312的突起512可安置於記憶卡500之頂面541上。然而，記憶卡500之突起512可設置於頂面541上自接近於第一側面545之區域至接近於第二側面546之區域。類似於圖6之記憶卡400之斜面461的斜面561可設置於記憶卡500之拐角(corner)處。此外，記憶卡500可在第二側面546中包含凹口562。凹口562可大致安置於第二側面546之中心。凹口562可自記憶卡500之頂面541延伸至底面542。或者，凹口562可形成於第一側面545中，或凹口可分別形成於第一側面545以及第二側面546中。11 and 12 illustrate the memory card 500. 11 is a top perspective view illustrating the memory card 500, and FIG. 12 is a bottom perspective view illustrating the memory card 500. The memory card 500 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in Figures 1-3. The location of the interconnect terminal 538 of the memory card 500 can be similar to the interconnect terminal 238 of the memory card 200 illustrated in Figures 1-3. A protrusion 512 similar to the protrusion 312 of the memory card 300 of FIG. 4 can be disposed on the top surface 541 of the memory card 500. However, the protrusion 512 of the memory card 500 can be disposed on the top surface 541 from an area proximate to the first side 545 to an area proximate to the second side 546. A slope 561 similar to the slope 461 of the memory card 400 of FIG. 6 may be disposed at a corner of the memory card 500. Additionally, memory card 500 can include a notch 562 in second side 546. The recess 562 can be disposed generally at the center of the second side 546. The recess 562 can extend from the top surface 541 of the memory card 500 to the bottom surface 542. Alternatively, the notches 562 can be formed in the first side 545, or the notches can be formed in the first side 545 and the second side 546, respectively.

圖13說明記憶卡501。圖13為記憶卡501之俯視圖。記憶卡501具有類似於圖11以及圖12中所說明之記憶卡500之形狀的形狀。然而，凹口562a自頂面541形成達到記憶卡501之預定深度。舉例而言，當突起512之厚度不包含於記憶卡501之厚度中時，所述預定深度可為記憶卡501之厚度的一半。或者，當突起512之厚度不包含於記憶卡501之厚度中時，所述預定深度可小於記憶卡501之厚度的一半。FIG. 13 illustrates the memory card 501. FIG. 13 is a plan view of the memory card 501. The memory card 501 has a shape similar to that of the memory card 500 illustrated in FIGS. 11 and 12. However, the recess 562a is formed from the top surface 541 to a predetermined depth of the memory card 501. For example, when the thickness of the protrusion 512 is not included in the thickness of the memory card 501, the predetermined depth may be half the thickness of the memory card 501. Alternatively, when the thickness of the protrusion 512 is not included in the thickness of the memory card 501, the predetermined depth may be less than half the thickness of the memory card 501.

雖然圖13中未圖示，但在記憶卡501中，當自頂面檢視記憶體晶片時，所述記憶體晶片可與凹口562a部分重疊，且當自頂面檢視控制器晶片時，所述控制器晶片可位於凹口562a外部。此外，當自第二側面546'檢視控制器晶片時，所述控制器晶片可與凹口562a部分地重疊。Although not shown in FIG. 13, in the memory card 501, when the memory chip is viewed from the top surface, the memory chip may partially overlap the notch 562a, and when the controller wafer is viewed from the top surface, The controller wafer can be located outside of the recess 562a. Moreover, when the controller wafer is viewed from the second side 546', the controller wafer can partially overlap the recess 562a.

圖14至圖17說明記憶卡700。圖14為說明記憶卡700之俯視透視圖，並且圖15為說明記憶卡700之仰視透視圖。此外，圖16以及圖17為記憶卡700前視圖以及俯視圖，其用於說明記憶體晶片734以及控制器晶片736。記憶卡700可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡700之互連端子738位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。類似於圖4之記憶卡300之突起312的突起712可安置於記憶卡700之頂面741上。第一凹槽763可形成於記憶卡700之頂面741的接近於第一側面745之區域中，並且第二凹槽764可形成於頂面741的接近於第二側面746之區域中。第一凹槽763之縱向方向可平行於第一方向12。第一凹槽763可在其縱向方向上具有恆定寬度GW1。第一凹槽763之末端可延伸至記憶卡700之正面743。第一凹槽763以及第二凹槽764之長度GL1可為記憶卡700之長度CL之約1/4至約3/4。舉例而言，長度GL1可為記憶卡700之長度CL之1/2。此外，第一凹槽763之側面可延伸至第一側面745。第一凹槽763之寬度GW1可為記憶卡700之寬度CW之約1/20至約1/10。舉例而言，第一凹槽763之寬度GW1可為記憶卡700之寬度CW之約1/12。第一凹槽763可自700之頂面741延伸達到一預定深度。舉例而言，所述預定深度可為記憶卡700之厚度之約1/2。第一凹槽763以及第二凹槽764可對於穿過記憶卡700之中心且大致平行於第一側面745的虛線18成為對稱。14 to 17 illustrate the memory card 700. FIG. 14 is a top perspective view illustrating the memory card 700, and FIG. 15 is a bottom perspective view illustrating the memory card 700. 16 and 17 are a front view and a plan view of the memory card 700 for explaining the memory chip 734 and the controller wafer 736. The memory card 700 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in Figures 1-3. The location of the interconnect terminal 738 of the memory card 700 can be similar to the interconnect terminal 238 of the memory card 200 illustrated in Figures 1-3. A protrusion 712 similar to the protrusion 312 of the memory card 300 of FIG. 4 can be disposed on the top surface 741 of the memory card 700. The first recess 763 can be formed in a region of the top surface 741 of the memory card 700 that is proximate to the first side 745, and the second recess 764 can be formed in a region of the top surface 741 that is proximate to the second side 746. The longitudinal direction of the first groove 763 may be parallel to the first direction 12. The first groove 763 may have a constant width G W1 in its longitudinal direction. The end of the first recess 763 can extend to the front side 743 of the memory card 700. The length G L1 of the first recess 763 and the second recess 764 may be about 1/4 to about 3/4 of the length C L of the memory card 700. For example, the length G L1 may be 1/2 of the length C L of the memory card 700. Additionally, the sides of the first recess 763 can extend to the first side 745. The width G W1 of the first recess 763 may be about 1/20 to about 1/10 of the width C W of the memory card 700. For example, the width G W1 of the first groove 763 may be about 1/12 of the width C W of the memory card 700. The first recess 763 can extend from the top surface 741 of the 700 to a predetermined depth. For example, the predetermined depth may be about 1/2 of the thickness of the memory card 700. The first groove 763 and the second groove 764 may be symmetrical for a dashed line 18 that passes through the center of the memory card 700 and is substantially parallel to the first side 745.

如上所述，控制器晶片736可小於記憶體晶片734。在此狀況下，當自頂面檢視記憶體晶片734時，記憶體晶片734可部分地與凹槽763以及764重疊，且當自頂面檢視控制器晶片736時，控制器晶片736可安置於凹槽763以及764外部。此外，當自第一側面745檢視控制器晶片736時，控制器晶片736可與凹槽763以及764部分地重疊。雖然記憶卡700包含凹槽763以及764並且具有有限大小，但具有相對大的大小的記憶體晶片734可安置於記憶卡700中。As noted above, controller wafer 736 can be smaller than memory chip 734. In this case, when the memory wafer 734 is viewed from the top surface, the memory wafer 734 can partially overlap the recesses 763 and 764, and when the controller wafer 736 is viewed from the top surface, the controller wafer 736 can be placed in The grooves 763 and 764 are external. Moreover, when the controller wafer 736 is viewed from the first side 745, the controller wafer 736 can partially overlap the grooves 763 and 764. Although the memory card 700 includes the grooves 763 and 764 and has a limited size, the memory chip 734 having a relatively large size can be disposed in the memory card 700.

或者，僅第一凹槽763以及第二凹槽764中之一者可形成於記憶卡700中。此外，第一凹槽763以及第二凹槽764可自記憶卡700之頂面741延伸至底面742。Alternatively, only one of the first groove 763 and the second groove 764 may be formed in the memory card 700. In addition, the first recess 763 and the second recess 764 can extend from the top surface 741 of the memory card 700 to the bottom surface 742.

在上述實例中，凹槽763以及764之末端延伸至正面743，並且凹槽763以及764之另一末端延伸至與背面744間隔開之位置。然而，或者，凹槽763以及764之末端可延伸至正面743，並且凹槽763以及764之另一末端可延伸至背面744。In the above example, the ends of the grooves 763 and 764 extend to the front surface 743, and the other ends of the grooves 763 and 764 extend to a position spaced apart from the back surface 744. Alternatively, however, the ends of the grooves 763 and 764 can extend to the front side 743, and the other ends of the grooves 763 and 764 can extend to the back side 744.

此外，在上述實例中，凹槽763以及764之外側延伸至第一側面745以及第二側面746。然而，或者，凹槽763以及764之外側可延伸至由第一側面745以及第二側面746向內間隔之位置。Moreover, in the above examples, the outer sides of the grooves 763 and 764 extend to the first side 745 and the second side 746. Alternatively, however, the outer sides of the grooves 763 and 764 may extend to a position spaced inward by the first side 745 and the second side 746.

凹槽763以及764可在使用者將記憶卡700插入至電子機器之插口中時防止反向插入。舉例而言，圖14之記憶卡700可與電子機器5400(參看圖40)一起使用，電子機器5400在插口5420(參看圖40)中包含對應於凹槽763以及764之突起5460(參看圖40)。如圖16中所展示，記憶卡700亦包含模製部件720以及電路板730。The grooves 763 and 764 prevent reverse insertion when the user inserts the memory card 700 into the socket of the electronic machine. For example, the memory card 700 of FIG. 14 can be used with an electronic machine 5400 (see FIG. 40) that includes protrusions 5460 corresponding to the grooves 763 and 764 in the socket 5420 (see FIG. 40) (see FIG. 40). ). As shown in FIG. 16, the memory card 700 also includes a molded component 720 and a circuit board 730.

圖18以及圖19說明記憶卡800。圖18為說明記憶卡800之俯視透視圖，並且圖19為說明記憶卡800之仰視透視圖。記憶卡800可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡800之互連端子838的位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。類似於圖4之記憶卡300之突起312的突起812可安置於記憶卡800之頂面841上。如同圖14以及圖15中所說明之記憶卡700之第一凹槽763以及第二凹槽764，第一凹槽863以及第二凹槽864可形成於記憶卡800之兩個側面845、846中。此外，第一凹口865可形成於第一側面845中。記憶卡800之第一凹槽863之長度GL2可小於圖14以及圖15中所說明之記憶卡700之第一凹槽763之長度。第一凹槽863可延伸至正面843，並且第一凹槽863之長度GL2可短於記憶卡800之長度CL之約1/2。舉例而言，第一凹槽863之長度GL2可為記憶卡800之長度CL之約1/4至約3/8。第一凹口865可安置於記憶卡800之第一側面845之中心部分處。第一凹口865之寬度NW可等於第一凹槽863之寬度GW2。第一凹口865之長度NL可為第一凹槽863之長度GL2之約1/8至約1/6。第一凹口865可自頂面841延伸達到一預定深度。舉例而言，第一凹口865之厚度NT可等於第一凹槽863之厚度GT。舉例而言，第一側面845之預定深度可為不包含突起812之厚度的記憶卡800之厚度的約1/2。此外，第二凹槽864以及第二凹口866可形成於第二側面864中。第二側面864以及第二凹口866可對於穿過記憶卡800之中心且大致平行於第一側面845的虛線18而與第一凹槽863以及第一凹口865成為對稱。第一凹口865在第一方向12上與第一凹槽863間隔一預定距離。18 and 19 illustrate the memory card 800. FIG. 18 is a top perspective view illustrating the memory card 800, and FIG. 19 is a bottom perspective view illustrating the memory card 800. The memory card 800 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in Figures 1-3. The location of the interconnect terminal 838 of the memory card 800 can be similar to the interconnect terminal 238 of the memory card 200 illustrated in Figures 1-3. A protrusion 812 similar to the protrusion 312 of the memory card 300 of FIG. 4 can be disposed on the top surface 841 of the memory card 800. As with the first recess 763 and the second recess 764 of the memory card 700 illustrated in FIGS. 14 and 15, the first recess 863 and the second recess 864 may be formed on both sides 845, 846 of the memory card 800. in. Additionally, a first recess 865 can be formed in the first side 845. The length G L2 of the first groove 863 of the memory card 800 may be smaller than the length of the first groove 763 of the memory card 700 illustrated in FIGS. 14 and 15 . The first groove 863 may extend to the front surface 843, and the length G L2 of the first groove 863 may be shorter than about 1/2 of the length C L of the memory card 800. For example, the length G L2 of the first groove 863 may be about 1/4 to about 3/8 of the length C L of the memory card 800. The first recess 865 can be disposed at a central portion of the first side 845 of the memory card 800. The first recess 865 may be equal to the width N W width of the first groove 863 of the G W2. The length N L of the first recess 865 may be about 1/8 to about 1/6 of the length G L2 of the first recess 863. The first recess 865 can extend from the top surface 841 to a predetermined depth. For example, the thickness N T of the first recess 865 may be equal to the thickness G T of the first recess 863. For example, the predetermined depth of the first side 845 can be about 1/2 of the thickness of the memory card 800 that does not include the thickness of the protrusions 812. Additionally, a second recess 864 and a second recess 866 can be formed in the second side 864. The second side 864 and the second recess 866 can be symmetrical with the first recess 863 and the first recess 865 for a dashed line 18 that passes through the center of the memory card 800 and is generally parallel to the first side 845. The first recess 865 is spaced apart from the first recess 863 by a predetermined distance in the first direction 12.

或者，僅第一凹槽863以及第二凹槽864中之一者可形成於記憶卡800中。此外，第一凹槽863以及第二凹槽864可自記憶卡800之頂面841延伸至底面842。此外，僅第一凹口865以及第二凹口866中之一者可形成於記憶卡800中。突起812可以未設置於記憶卡800之頂面841上。此外，第一凹口865可自記憶卡800之頂面841延伸至底面842。Alternatively, only one of the first groove 863 and the second groove 864 may be formed in the memory card 800. In addition, the first recess 863 and the second recess 864 can extend from the top surface 841 of the memory card 800 to the bottom surface 842. Further, only one of the first notch 865 and the second notch 866 may be formed in the memory card 800. The protrusion 812 may not be disposed on the top surface 841 of the memory card 800. Additionally, the first recess 865 can extend from the top surface 841 of the memory card 800 to the bottom surface 842.

圖20以及圖21說明記憶卡900。圖20為說明記憶卡900之俯視透視圖，並且圖21為說明記憶卡900之仰視透視圖。記憶卡900可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡900之互連端子938的位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。類似於圖4之記憶卡300之突起312的突起912可安置於記憶卡900之頂面941上。如同圖14以及圖15中所說明之記憶卡700之第一凹槽763以及第二凹槽764，第一凹槽963以及第二凹槽964可形成於記憶卡900之兩個側面945以及946中。此外，類似於圖6之記憶卡400之斜面461的斜面961可設置於記憶卡900之拐角處。或者，斜面961可類似於圖8之斜面461a。20 and 21 illustrate the memory card 900. 20 is a top perspective view illustrating the memory card 900, and FIG. 21 is a bottom perspective view illustrating the memory card 900. The memory card 900 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1-3. The location of the interconnect terminal 938 of the memory card 900 can be similar to the interconnect terminal 238 of the memory card 200 illustrated in Figures 1-3. A protrusion 912 similar to the protrusion 312 of the memory card 300 of FIG. 4 can be disposed on the top surface 941 of the memory card 900. Like the first recess 763 and the second recess 764 of the memory card 700 illustrated in FIGS. 14 and 15, the first recess 963 and the second recess 964 may be formed on both sides 945 and 946 of the memory card 900. in. Further, a slope 961 similar to the slope 461 of the memory card 400 of FIG. 6 may be disposed at a corner of the memory card 900. Alternatively, the ramp 961 can be similar to the ramp 461a of FIG.

圖22以及圖23說明記憶卡1000。圖22為說明記憶卡1000之俯視透視圖，並且圖23為說明記憶卡1000(包含底面1042)之仰視透視圖。記憶卡1000可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡1000之互連端子1038的位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。類似於圖4之記憶卡300之突起312的突起1012可安置於記憶卡1000之頂面1041上。此外，類似於圖6之記憶卡400之斜面461的斜面1061可設置於記憶卡1000之拐角處。如同圖14以及圖15中所說明之記憶卡700之第一凹槽763，凹槽1063可形成於記憶卡1000之第一側面1045中。如同圖11中所說明之記憶卡500之第二凹槽562，凹口1066可形成於記憶卡1000之第二側面1046中。22 and 23 illustrate the memory card 1000. 22 is a top perspective view illustrating the memory card 1000, and FIG. 23 is a bottom perspective view illustrating the memory card 1000 (including the bottom surface 1042). The memory card 1000 may have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1 through 3. The location of the interconnect terminal 1038 of the memory card 1000 can be similar to the interconnect terminal 238 of the memory card 200 illustrated in Figures 1-3. A protrusion 1012 similar to the protrusion 312 of the memory card 300 of FIG. 4 can be disposed on the top surface 1041 of the memory card 1000. Further, a slope 1061 similar to the slope 461 of the memory card 400 of FIG. 6 may be disposed at a corner of the memory card 1000. As with the first recess 763 of the memory card 700 illustrated in FIGS. 14 and 15, the recess 1063 can be formed in the first side 1045 of the memory card 1000. As with the second recess 562 of the memory card 500 illustrated in FIG. 11, a recess 1066 can be formed in the second side 1046 of the memory card 1000.

圖24說明記憶卡1100。圖24為說明記憶卡1100的仰視透視圖。記憶卡1100可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡1100包含互連端子1138，並且互連端子1138中之一或多個互連端子1138a可長於其他端子1138b。舉例而言，互連端子1138a可為電源端子，其比其他端子1138b長兩倍或兩倍以上。互連端子1138之面向背面1144之末端可沿同一條線而配置，且電源端子1138a之另一末端可比其他端子1138b之另一末端接近於正面1143。舉例而言，互連端子1138a可為電源端子1138a。在另一實例中，可設置多個互連端子1138a，並且互連端子1138a可為電源端子。FIG. 24 illustrates the memory card 1100. FIG. 24 is a bottom perspective view illustrating the memory card 1100. The memory card 1100 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1-3. The memory card 1100 includes interconnect terminals 1138, and one or more of the interconnect terminals 1138 may be longer than the other terminals 1138b. For example, the interconnect terminal 1138a can be a power supply terminal that is two or more times longer than the other terminals 1138b. The end of the interconnect terminal 1138 facing the back surface 1144 may be disposed along the same line, and the other end of the power terminal 1138a may be closer to the front surface 1143 than the other end of the other terminal 1138b. For example, the interconnect terminal 1138a can be the power terminal 1138a. In another example, a plurality of interconnect terminals 1138a can be provided, and interconnect terminal 1138a can be a power supply terminal.

圖25說明記憶卡1200。圖25為說明記憶卡1200的仰視透視圖。記憶卡1200可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。保護區域1242b可設置於記憶卡1200之底面1242上於正面1243與互連端子1238之間。保護區域1242b可由不同於用於形成底面1242之另一區域1242a之材料的材料形成。保護區域1242b可由相比於用於形成其他區域1242a的材料在記憶卡1200與互連端子5140b接觸時對電子機器之互連端子(諸如，圖36之電子機器5100之互連端子5140b)造成較少損壞的材料形成。保護區域1242b可具有大致矩形的形狀。保護區域1242b之縱向方向可平行於第二方向14。保護區域1242b之長度PL可足夠大以覆蓋互連端子1238之寬度TW。舉例而言，保護區域1242b可自接近於第一側面1245之位置延伸至接近於第二側面1246之位置。或者，保護區域1242b可自第一側面1245延伸至第二側面1246。保護區域1242b之寬度PW可大於各別互連端子1238之長度。保護區域1242b可安置於對應於大小類似於當前實施例之記憶卡1200的不同記憶卡之互連端子(諸如，圖37之記憶卡5160之互連端子5162)的位置處。舉例而言，不同記憶卡5160可為上述微型安全數位卡。FIG. 25 illustrates the memory card 1200. FIG. 25 is a bottom perspective view illustrating the memory card 1200. The memory card 1200 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1-3. The protection area 1242b can be disposed on the bottom surface 1242 of the memory card 1200 between the front surface 1243 and the interconnection terminal 1238. The protective region 1242b may be formed of a material different from the material used to form the other region 1242a of the bottom surface 1242. The protective region 1242b can be caused by an interconnection terminal of the electronic device (such as the interconnection terminal 5140b of the electronic device 5100 of FIG. 36) when the memory card 1200 is in contact with the interconnection terminal 5140b as compared with the material for forming the other region 1242a. Less damaged material is formed. The protective area 1242b may have a substantially rectangular shape. The longitudinal direction of the protected area 1242b can be parallel to the second direction 14. The length P L of the guard region 1242b can be large enough to cover the width T W of the interconnect terminal 1238. For example, the protective region 1242b can extend from a position proximate to the first side 1245 to a position proximate to the second side 1246. Alternatively, the protective region 1242b can extend from the first side 1245 to the second side 1246. The width P W of the guard region 1242b can be greater than the length of the respective interconnect terminal 1238. The protected area 1242b may be disposed at a position corresponding to an interconnection terminal of a different memory card similar in size to the memory card 1200 of the current embodiment, such as the interconnection terminal 5162 of the memory card 5160 of FIG. For example, different memory cards 5160 can be the aforementioned miniature secure digital cards.

在上述實例中，所述互連端子平行於第二方向14而配置於接近於記憶卡之正面的記憶卡之底面上。然而，所述互連端子可配置於接近於記憶卡之背面的記憶卡之底面上。此外，所述互連端子可不平行於第二方向14。此外，所述互連端子可配置於記憶卡之頂面上。In the above example, the interconnect terminal is disposed parallel to the second direction 14 on a bottom surface of the memory card proximate to the front side of the memory card. However, the interconnection terminal may be disposed on a bottom surface of the memory card that is close to the back side of the memory card. Furthermore, the interconnect terminals may not be parallel to the second direction 14. In addition, the interconnect terminal can be disposed on a top surface of the memory card.

圖26為說明根據發明概念之另一實例實施例之記憶卡1300的透視圖。圖26為說明記憶卡1300的仰視透視圖。記憶卡1300可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡1300包含多組互連端子1338。舉例而言，記憶卡1300可包含兩組互連端子1338。舉例而言，對應於圖1至圖3中所說明之記憶卡200之互連端子238的記憶卡1300之互連端子1338現將稱為第一組互連端子1338a，並且其他互連端子1338將稱為第二組互連端子1338b。FIG. 26 is a perspective view illustrating a memory card 1300 in accordance with another example embodiment of the inventive concepts. FIG. 26 is a bottom perspective view illustrating the memory card 1300. The memory card 1300 may have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1 through 3. Memory card 1300 includes a plurality of sets of interconnect terminals 1338. For example, memory card 1300 can include two sets of interconnect terminals 1338. For example, interconnect terminal 1338 of memory card 1300 corresponding to interconnect terminal 238 of memory card 200 illustrated in FIGS. 1-3 will now be referred to as a first set of interconnect terminals 1338a, and other interconnect terminals 1338 It will be referred to as a second set of interconnect terminals 1338b.

第一組互連端子1338a之數目可不同於第二組互連端子1338b之數目。舉例而言，第一組互連端子1338a之數目可為九個，並且第二組互連端子1338b之數目可為八個。在此狀況下，第一組互連端子1338a可更包含專用於I/O之插腳。專用於I/O之插腳可最接近於第一側面。或者，第一組互連端子1338a之數目可等於第二組互連端子1338b之數目。The number of first set of interconnect terminals 1338a may be different than the number of second set of interconnect terminals 1338b. For example, the number of first set of interconnect terminals 1338a can be nine, and the number of second set of interconnect terminals 1338b can be eight. In this case, the first set of interconnect terminals 1338a may further include pins dedicated to I/O. Pins dedicated to I/O can be closest to the first side. Alternatively, the number of first set of interconnect terminals 1338a can be equal to the number of second set of interconnect terminals 1338b.

第二組互連端子1338b安置於正面1343與第一組互連端子1338a之間。舉例而言，安置第二組互連端子1338b之區域可對應於安置大小類似於記憶卡1300之不同記憶卡之互連端子(諸如，圖37之記憶卡5160之互連端子5162)的區域。舉例而言，不同記憶卡5160可為上述微型安全數位卡。第二組互連端子1338b之數目可等於第一組互連端子1338a之數目，並且第二組互連端子1338b可按照與第一組互連端子1338a相同之間隔來配置。在此狀況下，第二組互連端子1338b可分別與第一組互連端子1338a對準，如圖26中所展示。或者，互連端子1438可交錯(staggered)。舉例而言，記憶卡1400之第一組互連端子1438a與第二組互連端子1438b可交錯，如圖27中所展示。A second set of interconnect terminals 1338b is disposed between the front side 1343 and the first set of interconnect terminals 1338a. For example, the area in which the second set of interconnect terminals 1338b are disposed may correspond to an area in which interconnect terminals of different memory cards similar in size to memory card 1300 (such as interconnect terminal 5162 of memory card 5160 of FIG. 37) are disposed. For example, different memory cards 5160 can be the aforementioned miniature secure digital cards. The number of second set of interconnect terminals 1338b can be equal to the number of first set of interconnect terminals 1338a, and the second set of interconnect terminals 1338b can be configured at the same spacing as the first set of interconnect terminals 1338a. In this case, the second set of interconnect terminals 1338b can be aligned with the first set of interconnect terminals 1338a, respectively, as shown in FIG. Alternatively, interconnect terminal 1438 can be staggered. For example, the first set of interconnect terminals 1438a of the memory card 1400 can be interleaved with the second set of interconnect terminals 1438b, as shown in FIG.

第一組互連端子1338a以及第二組互連端子1338b可用於不同電子機器。第一組互連端子1338a可插入至第一電子機器之插口中以與第一電子機器電性連接，且第二組互連端子1338b可插入至第二電子機器之插口中以與第二電子機器電性連接。The first set of interconnect terminals 1338a and the second set of interconnect terminals 1338b can be used in different electronic machines. The first set of interconnecting terminals 1338a can be inserted into the socket of the first electronic machine to be electrically connected to the first electronic device, and the second set of interconnecting terminals 1338b can be inserted into the socket of the second electronic machine to be associated with the second electronic The machine is electrically connected.

第一以及第二電子機器可用於不同目的。第一以及第二電子機器中之每一者可包含可完全插入記憶卡之插口。第一以及第二電子機器可與不同記憶卡一起使用，且第一電子機器之插口處所設置之互連端子之數目、大小以及配置可不同於第二電子機器之插口處所設置之互連端子之數目、大小以及配置。The first and second electronic machines can be used for different purposes. Each of the first and second electronic machines can include a socket that can be fully inserted into the memory card. The first and second electronic machines can be used with different memory cards, and the number, size, and configuration of the interconnection terminals provided at the socket of the first electronic machine can be different from the interconnection terminals provided at the socket of the second electronic machine. Number, size, and configuration.

圖28說明實例的第一電子機器2100以及實例的第二電子機器2200。第一電子機器2100可為諸如電腦、數位相機、數位攝錄一體機、蜂巢式電話以及個人數位助理(PDA)之裝置中的一者，並且第二電子機器2200可為所述裝置中之另一者。或者，第一電子機器2100以及第二電子機器2200可為同一種類之電子機器。舉例而言，第一電子機器2100以及第二電子機器2200可為蜂巢式電話。FIG. 28 illustrates an example first electronic machine 2100 and an example second electronic machine 2200. The first electronic machine 2100 can be one of a device such as a computer, a digital camera, a digital camcorder, a cellular telephone, and a personal digital assistant (PDA), and the second electronic machine 2200 can be another of the devices One. Alternatively, the first electronic device 2100 and the second electronic device 2200 may be the same type of electronic device. For example, the first electronic machine 2100 and the second electronic machine 2200 can be cellular phones.

第一電子機器2100以及第二電子機器2200可包含具有類似大小之插口2120以及2220。互連端子2140以及2240設置於插口2120以及2220處以與外部記憶卡(諸如，圖26中所說明之記憶卡1300)電性連接。舉例而言，互連端子2140以及2240可設置於插口2120以及2220之底面處。第一電子機器2100之插口2120之互連端子2140與插口2120之入口2122之間的距離短於第二電子機器2200之插口2220之互連端子2240與插口2220之入口2222之間的距離。在此狀況下，若記憶卡1300(參看圖26)插入至第一電子機器2100之插口2120中，則第一組互連端子1338a電性連接至第一電子機器2100之互連端子2140。此外，若記憶卡1300(參看圖26)插入至第二電子機器2200之插口2220中，則第二組互連端子1338b電性連接至第二電子機器2200之互連端子2240。The first electronic machine 2100 and the second electronic machine 2200 can include sockets 2120 and 2220 having similar sizes. Interconnect terminals 2140 and 2240 are provided at jacks 2120 and 2220 for electrical connection with an external memory card, such as memory card 1300 illustrated in FIG. For example, interconnect terminals 2140 and 2240 can be disposed at the bottom surfaces of the sockets 2120 and 2220. The distance between the interconnection terminal 2140 of the socket 2120 of the first electronic machine 2100 and the inlet 2122 of the socket 2120 is shorter than the distance between the interconnection terminal 2240 of the socket 2220 of the second electronic machine 2200 and the inlet 2222 of the socket 2220. In this case, if the memory card 1300 (see FIG. 26) is inserted into the socket 2120 of the first electronic device 2100, the first set of interconnect terminals 1338a are electrically connected to the interconnect terminal 2140 of the first electronic machine 2100. In addition, if the memory card 1300 (see FIG. 26) is inserted into the socket 2220 of the second electronic device 2200, the second set of interconnect terminals 1338b are electrically connected to the interconnect terminal 2240 of the second electronic device 2200.

圖29說明另一實例記憶卡1500。圖29為說明記憶卡1500的仰視透視圖。記憶卡1500可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡1500包含多個互連端子1538a以及1538b。舉例而言，記憶卡1500可包含第一組互連端子1538a以及第二組互連端子1538b。記憶卡1500之第一組互連端子1538a可安置於接近於記憶卡1500之背面1544之底面1542的區域中。記憶卡1500之第二組互連端子1538b可安置於接近於記憶卡1500之正面1543之底面1542的區域中。FIG. 29 illustrates another example memory card 1500. FIG. 29 is a bottom perspective view illustrating the memory card 1500. The memory card 1500 may have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1 through 3. Memory card 1500 includes a plurality of interconnect terminals 1538a and 1538b. For example, memory card 1500 can include a first set of interconnect terminals 1538a and a second set of interconnect terminals 1538b. The first set of interconnect terminals 1538a of the memory card 1500 can be disposed in an area proximate to the bottom surface 1542 of the back side 1544 of the memory card 1500. The second set of interconnect terminals 1538b of the memory card 1500 can be disposed in an area proximate the bottom surface 1542 of the front side 1543 of the memory card 1500.

圖30以及圖31說明記憶卡1600。圖30為說明記憶卡1600之俯視透視圖，並且圖31為說明記憶卡1600之仰視透視圖。記憶卡1600可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡1600包含多個互連端子1638a以及1638b。舉例而言，記憶卡1600可包含第一組互連端子1638a以及第二組互連端子1638b。第一組互連端子1638a可安置於記憶卡1600之頂面1641上，並且第二組互連端子1638b可安置於記憶卡1600之底面1642上。舉例而言，第一組互連端子1638a可安置於接近於記憶卡1600之正面1643之頂面1641的區域中，並且第二組互連端子1638b可安置於接近於記憶卡1600之正面1643之底面1642的區域中。30 and 31 illustrate the memory card 1600. FIG. 30 is a top perspective view illustrating the memory card 1600, and FIG. 31 is a bottom perspective view illustrating the memory card 1600. The memory card 1600 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in FIGS. 1-3. Memory card 1600 includes a plurality of interconnect terminals 1638a and 1638b. For example, memory card 1600 can include a first set of interconnect terminals 1638a and a second set of interconnect terminals 1638b. The first set of interconnect terminals 1638a can be disposed on the top surface 1641 of the memory card 1600, and the second set of interconnect terminals 1638b can be disposed on the bottom surface 1642 of the memory card 1600. For example, the first set of interconnect terminals 1638a can be disposed in a region proximate the top surface 1641 of the front side 1643 of the memory card 1600, and the second set of interconnect terminals 1638b can be disposed proximate to the front side 1643 of the memory card 1600. In the area of the bottom surface 1642.

在圖26、圖27、圖29以及圖31之記憶卡1300、1400、1500以及1600中，第一組互連端子1338a、1438a、1538a以及1638a以及第二組互連端子1338b、1438b、1538b以及1638b中的一組可以保護層來覆蓋。所述保護層可為阻焊劑(solder resist)或其他材料。舉例而言，所述保護層可為環氧化合物或環氧膠帶。In the memory cards 1300, 1400, 1500, and 1600 of FIGS. 26, 27, 29, and 31, a first set of interconnect terminals 1338a, 1438a, 1538a, and 1638a and a second set of interconnect terminals 1338b, 1438b, 1538b, and A group in 1638b can be covered by a protective layer. The protective layer can be a solder resist or other material. For example, the protective layer can be an epoxy compound or an epoxy tape.

參看圖32，第一電子機器3100包含插口3120，並且互連端子3140設置於插口3120之頂面上。第二電子機器3200包含插口3220，並且互連端子3240設置於插口3220之底面上。記憶卡1600可與第一電子機器3100以及第二電子機器3200兩者一起使用。Referring to FIG. 32, the first electronic machine 3100 includes a socket 3120, and the interconnection terminal 3140 is disposed on a top surface of the socket 3120. The second electronic machine 3200 includes a socket 3220, and the interconnection terminal 3240 is disposed on a bottom surface of the socket 3220. The memory card 1600 can be used with both the first electronic machine 3100 and the second electronic machine 3200.

在上述實例中，圖25、圖26、圖27、圖29以及圖30中所說明之記憶卡可具有類似於圖1至圖3中所說明之記憶卡之形狀的形狀。然而，記憶卡可具有類似於圖4、圖6、圖8、圖11、圖13、圖14、圖18、圖20以及圖22中所說明之記憶卡之形狀中的任一者的形狀。亦即，圖25、圖26、圖27、圖29以及圖30中所說明之記憶卡可包含突起312或612、斜面461或461a、凹口562、562a、865、866或1066、第一凹槽763或863以及第二凹槽764或864中的一者或多者。In the above examples, the memory cards illustrated in FIGS. 25, 26, 27, 29, and 30 may have shapes similar to those of the memory cards illustrated in FIGS. 1 through 3. However, the memory card may have a shape similar to any of the shapes of the memory cards illustrated in FIGS. 4, 6, 8, 11, 13, 14, 18, 20, and 22. That is, the memory card illustrated in FIGS. 25, 26, 27, 29, and 30 may include protrusions 312 or 612, bevels 461 or 461a, notches 562, 562a, 865, 866, or 1066, first concave One or more of the slots 763 or 863 and the second recess 764 or 864.

圖33以及圖34說明記憶卡1700。圖33為說明記憶卡1700之俯視透視圖，並且圖34為說明記憶卡1700之仰視透視圖。記憶卡1700可具有類似於圖4以及圖5中所說明之記憶卡300之薄平行六面體形狀的薄平行六面體形狀。然而，凸起部分1758以及凹陷部分1759安置於記憶卡1700之第二側面1746(相對於第一側面1745)上。凸起部分1758可安置得接近於凹陷部分1759。凸起部分1758可比凹陷部分1759更接近於正面1743。如圖所示，記憶卡1700包含頂面1741以及突起1712。33 and 34 illustrate the memory card 1700. FIG. 33 is a top perspective view illustrating the memory card 1700, and FIG. 34 is a bottom perspective view illustrating the memory card 1700. The memory card 1700 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 300 illustrated in FIGS. 4 and 5. However, raised portion 1758 and recessed portion 1759 are disposed on second side 1746 (relative to first side 1745) of memory card 1700. The raised portion 1758 can be disposed proximate to the recessed portion 1759. The raised portion 1758 can be closer to the front side 1743 than the recessed portion 1759. As shown, the memory card 1700 includes a top surface 1741 and a protrusion 1712.

圖35為說明另一實例記憶卡1800的分解透視圖。在上述實例中，已解釋記憶卡200至1700是按照藉由模製方法封入上面安裝有半導體晶片之電路板的方式來製造。然而，代替此情形，記憶卡1800可藉由將上面安裝有半導體晶片1834以及1836(例如，控制器以及記憶體晶片)之電路板1830插入於外殼1801中來製造。舉例而言，外殼(case)1801包含上罩蓋1810以及下罩蓋1820。上罩蓋1810面向電路板1830之頂面，並且下罩蓋1820面向電路板1830之底面。當上罩蓋1810以及下罩蓋1820耦接時，一容納空間形成於上罩蓋1810以及下罩蓋1820內部，以使得可容納電路板1830。下罩蓋1820按照使得電路板1830之互連端子1838可曝露於外殼1801之外部的方式而成形。舉例而言，大小以及形狀對應於互連端子1838之開口1822可形成於下罩蓋1820中於對應於電路板1830之互連端子1838之位置的位置處。FIG. 35 is an exploded perspective view illustrating another example memory card 1800. In the above examples, it has been explained that the memory cards 200 to 1700 are manufactured in such a manner as to be sealed by a molding method to a circuit board on which a semiconductor wafer is mounted. However, instead of this, the memory card 1800 can be manufactured by inserting a circuit board 1830 on which the semiconductor wafers 1834 and 1836 (for example, a controller and a memory chip) are mounted, in the housing 1801. For example, the case 1801 includes an upper cover 1810 and a lower cover 1820. The upper cover 1810 faces the top surface of the circuit board 1830, and the lower cover 1820 faces the bottom surface of the circuit board 1830. When the upper cover 1810 and the lower cover 1820 are coupled, a receiving space is formed inside the upper cover 1810 and the lower cover 1820 so that the circuit board 1830 can be accommodated. Lower cover 1820 is shaped in such a manner that interconnect terminal 1838 of circuit board 1830 can be exposed to the exterior of housing 1801. For example, an opening 1822 having a size and shape corresponding to the interconnect terminal 1838 can be formed at a location in the lower cover 1820 at a location corresponding to the interconnect terminal 1838 of the circuit board 1830.

圖36為說明根據發明概念之實例實施例之電子機器5100的透視圖。電子機器5100可與外部記憶卡(諸如，圖37中所說明之記憶卡5150或5160)電性連接以將諸如相片資料、語音資料、視訊資料或其他資訊的資料儲存於記憶卡5150或5160中，以及自記憶卡5150或5160讀取此類資料。舉例而言，電子機器5100可為電腦、數位相機、數位攝錄一體機、蜂巢式電話或PDA。電子機器5100包含主體以及插口5120。FIG. 36 is a perspective view illustrating an electronic machine 5100 according to an example embodiment of the inventive concept. The electronic device 5100 can be electrically connected to an external memory card (such as the memory card 5150 or 5160 illustrated in FIG. 37) to store data such as photo data, voice data, video data or other information in the memory card 5150 or 5160. And read such information from the memory card 5150 or 5160. For example, the electronic device 5100 can be a computer, a digital camera, a digital camcorder, a cellular phone, or a PDA. The electronic machine 5100 includes a body and a socket 5120.

插口5120可設置於所述主體之外部，以使得插口5120可直接曝露於電子機器5100之外部。插口5120之入口5122可由設置於主體處之罩蓋(未圖示)封閉或開放。插口5120包含容納空間以收納記憶卡5150或5160。舉例而言，所述容納空間可具有用以完全收納記憶卡5150或5160的充分體積。The socket 5120 can be disposed outside the body such that the socket 5120 can be directly exposed to the outside of the electronic device 5100. The inlet 5122 of the socket 5120 can be closed or open by a cover (not shown) provided at the body. The socket 5120 includes an accommodation space to accommodate the memory card 5150 or 5160. For example, the receiving space may have a sufficient volume to completely accommodate the memory card 5150 or 5160.

插口5120包含多組互連端子5140。舉例而言，插口5120可包含第一組互連端子5140a以及第二組互連端子5140b。第一組互連端子5140a以及第二組互連端子5140b可與不同種類之記憶卡電性連接。舉例而言，第一組互連端子5140a安置於適當位置，以使得當(第一)記憶卡5150插入至插口5120之容納空間中時，第一組互連端子5140a可電性連接至第一記憶卡5150之互連端子5152；第二組互連端子5140b安置於適當位置，以使得當(第二)記憶卡5160插入至插口5120之容納空間中時，第二組互連端子5140b可電性連接至第二記憶卡5160之互連端子5162。第一記憶卡5150之互連端子5152之數目、大小以及配置不同於第二記憶卡5160之互連端子5162之數目、大小以及配置。The socket 5120 includes a plurality of sets of interconnect terminals 5140. For example, the socket 5120 can include a first set of interconnect terminals 5140a and a second set of interconnect terminals 5140b. The first set of interconnect terminals 5140a and the second set of interconnect terminals 5140b can be electrically connected to different types of memory cards. For example, the first set of interconnect terminals 5140a are disposed in position such that when the (first) memory card 5150 is inserted into the receiving space of the socket 5120, the first set of interconnecting terminals 5140a can be electrically connected to the first The interconnection terminal 5152 of the memory card 5150; the second group of interconnection terminals 5140b are disposed in position such that when the (second) memory card 5160 is inserted into the housing space of the socket 5120, the second group of interconnection terminals 5140b can be electrically The connection is to the interconnect terminal 5162 of the second memory card 5160. The number, size, and configuration of the interconnect terminals 5152 of the first memory card 5150 are different from the number, size, and configuration of the interconnect terminals 5162 of the second memory card 5160.

舉例而言，第一組互連端子5140a以及第二組互連端子5140b設置於插口5120之容納空間之底面上。第一組互連端子5140a以及第二組互連端子5140b可配置於同一方向上。第一組互連端子5140a可比第二組互連端子5140b接近於入口5122。For example, the first set of interconnecting terminals 5140a and the second set of interconnecting terminals 5140b are disposed on the bottom surface of the receiving space of the socket 5120. The first set of interconnect terminals 5140a and the second set of interconnect terminals 5140b can be disposed in the same direction. The first set of interconnect terminals 5140a can be closer to the inlet 5122 than the second set of interconnect terminals 5140b.

圖37說明電子機器5100與記憶卡5150以及5160一起使用之實例。舉例而言，第二記憶卡5160可為上述微型安全數位卡，並且第一記憶卡5150可為不同種類之記憶卡。第一記憶卡5150可為現有記憶卡或新種類之記憶卡。舉例而言，第一記憶卡5150可為圖1、圖4、圖6、圖8、圖11、圖13、圖14、圖18、圖20或圖22中所說明之記憶卡。當記憶卡5150插入於所述容納空間中時，電子機器5100之插口5120之第一組互連端子5140a電性連接至第一記憶卡5150之互連端子5152。此外，當第二記憶卡5160插入於所述容納空間中時，電子機器5100之插口5120之第二組互連端子5140b電性連接至第二記憶卡5160之互連端子5162。第一記憶卡5150可大於第二記憶卡5160。選擇性地，第一記憶卡5150可與第二記憶卡5160為相同大小。FIG. 37 illustrates an example in which the electronic device 5100 is used with the memory cards 5150 and 5160. For example, the second memory card 5160 can be the above-described micro secure digital card, and the first memory card 5150 can be a different type of memory card. The first memory card 5150 can be an existing memory card or a new type of memory card. For example, the first memory card 5150 can be the memory card illustrated in FIG. 1, FIG. 4, FIG. 6, FIG. 8, FIG. 11, FIG. 13, FIG. 14, FIG. 18, FIG. When the memory card 5150 is inserted into the receiving space, the first set of interconnecting terminals 5140a of the socket 5120 of the electronic device 5100 are electrically connected to the interconnecting terminal 5152 of the first memory card 5150. In addition, when the second memory card 5160 is inserted into the receiving space, the second set of interconnecting terminals 5140b of the socket 5120 of the electronic device 5100 is electrically connected to the interconnecting terminal 5162 of the second memory card 5160. The first memory card 5150 can be larger than the second memory card 5160. Alternatively, the first memory card 5150 can be the same size as the second memory card 5160.

圖38說明包含多個互連端子5240之另一電子機器5200。電子機器5200類似於圖36之電子機器5100。然而，第一組互連端子5240a安置於插口5220之容納空間之頂面上，並且第二組互連端子5240b安置於插口5220之容納空間之底面上。如圖38所示，插口5220包含入口5222。FIG. 38 illustrates another electronic machine 5200 that includes a plurality of interconnect terminals 5240. Electronic machine 5200 is similar to electronic machine 5100 of FIG. However, the first set of interconnect terminals 5240a are disposed on the top surface of the receiving space of the socket 5220, and the second set of interconnecting terminals 5240b are disposed on the bottom surface of the receiving space of the socket 5220. As shown in FIG. 38, the socket 5220 includes an inlet 5222.

圖41以及圖42說明可用於上述記憶卡中之實例三維(3D)記憶體晶片。圖41以及圖42之記憶體晶片為韓國專利申請公開案第2009-93770號以及第2007-96972號中所揭露之記憶體裝置的實例，兩個公開案之全部內容以引用方式併入本文中。上述實施例之記憶體晶片可為韓國專利申請公開案第2009-93770號中所揭露之垂直類型之記憶體裝置或韓國專利申請公開案第2007-96972號中所揭露之非揮發性半導體記憶體裝置。41 and 42 illustrate an example three-dimensional (3D) memory wafer that can be used in the above described memory card. The memory chip of FIG. 41 and FIG. 42 is an example of a memory device disclosed in Korean Patent Application Publication No. 2009-93770 and No. 2007-96972, the entire contents of each of which are incorporated herein by reference. . The memory wafer of the above-described embodiment may be a non-volatile semiconductor memory as disclosed in Korean Patent Application Publication No. 2009-93770, or a non-volatile semiconductor memory disclosed in Korean Patent Application Publication No. 2007-96972. Device.

上述實例實施例之記憶卡可更包含保護器以保護半導體晶片免受靜電放電(ESD)的影響。圖43為說明具備保護器之記憶卡的示意圖。詳言之，圖43說明保護器280包含於記憶卡200'中之狀況。除記憶卡200'包含保護器280外，記憶卡200'與記憶卡200相同。應理解，記憶卡200'可代替記憶卡200用於實例實施例中。此種保護器可包含於其他實例實施例之記憶卡中。參看圖43，保護器280包含接地端子281、保護性圖案282以及開關裝置283。電路板230可劃分為第一區域、第二區域以及第三區域。半導體晶片232安裝於所述第一區域中，並且接地端子281安置於所述第二區域中。保護性圖案282安置於所述第三區域中以保護半導體晶片232。舉例而言，所述第一區域可為電路板230之中心區域，所述第二區域可為所述中心區域之一面，並且所述第三區域可為安置於所述第一區域周圍除了所述第二區域外的區域。The memory card of the above example embodiment may further include a protector to protect the semiconductor wafer from electrostatic discharge (ESD). Figure 43 is a schematic view showing a memory card having a protector. In detail, FIG. 43 illustrates the condition in which the protector 280 is included in the memory card 200'. The memory card 200' is the same as the memory card 200 except that the memory card 200' includes the protector 280. It should be understood that the memory card 200' can be used in the example embodiment instead of the memory card 200. Such a protector can be included in the memory card of other example embodiments. Referring to FIG. 43, the protector 280 includes a ground terminal 281, a protective pattern 282, and a switching device 283. The circuit board 230 can be divided into a first area, a second area, and a third area. A semiconductor wafer 232 is mounted in the first region, and a ground terminal 281 is disposed in the second region. A protective pattern 282 is disposed in the third region to protect the semiconductor wafer 232. For example, the first area may be a central area of the circuit board 230, the second area may be one side of the central area, and the third area may be disposed around the first area except The area outside the second area.

接地端子281之末端連接至外部接地部分，並且接地端子281之其他末端連接至保護性圖案282。接地端子281可直接地或經由導電圖案而連接至所述接地部分或接地端子281。接地端子281之數目可為兩個，並且保護性圖案282之兩末端可分別連接至接地端子281。雖然說明兩個接地端子281，但可改變接地端子281之數目。接地端子281可由導電材料形成。所述導電材料可包含金屬或金屬化合物。舉例而言，所述導電材料可為銅或銅化合物。The end of the ground terminal 281 is connected to the external ground portion, and the other ends of the ground terminal 281 are connected to the protective pattern 282. The ground terminal 281 may be connected to the ground portion or the ground terminal 281 directly or via a conductive pattern. The number of the ground terminals 281 may be two, and both ends of the protective pattern 282 may be respectively connected to the ground terminal 281. Although two ground terminals 281 are illustrated, the number of ground terminals 281 can be changed. The ground terminal 281 may be formed of a conductive material. The electrically conductive material may comprise a metal or a metal compound. For example, the electrically conductive material can be a copper or copper compound.

保護性圖案282形成於電路板230之第二區域中，並且與半導體晶片232間隔一預定距離。保護性圖案282連接至接地端子281。在使用兩個接地端子281之狀況下，保護性圖案282之兩末端可分別在圍繞半導體晶片232的環路形狀中連接至接地端子281。保護性圖案282可由導電材料形成。所述導電材料可包含金屬或金屬化合物。舉例而言，所述導電材料可為銅或銅化合物。The protective pattern 282 is formed in the second region of the circuit board 230 and spaced apart from the semiconductor wafer 232 by a predetermined distance. The protective pattern 282 is connected to the ground terminal 281. In the case where two ground terminals 281 are used, both ends of the protective pattern 282 may be connected to the ground terminal 281 in a loop shape surrounding the semiconductor wafer 232, respectively. The protective pattern 282 can be formed from a conductive material. The electrically conductive material may comprise a metal or a metal compound. For example, the electrically conductive material can be a copper or copper compound.

開關裝置283串聯連接於接地端子281與保護性圖案282之間。舉例而言，開關裝置283可形成於保護性圖案282上，如圖43中所展示。在另一實例中，開關裝置283可直接連接至接地端子281。在當前實施例中，開關裝置283之數目可為兩個，並且接地端子281分別經由開關裝置283而連接至接地端子281之兩末端。雖然說明兩個開關裝置283，但可改變開關裝置283之數目。此外，開關裝置283可經安置而接近於接地端子281以最小化開關裝置283與接地端子281之間的距離。在此狀況下，當在諸如靜電放電狀態之高壓狀態下產生火花時，高壓電流可迅速經由保護性圖案282而流動至接地端子281。開關裝置283可包含曾納二極體(Zener diode)、電感器以及可變電阻器(變阻器)中之一者。The switching device 283 is connected in series between the ground terminal 281 and the protective pattern 282. For example, the switching device 283 can be formed on the protective pattern 282, as shown in FIG. In another example, the switching device 283 can be directly connected to the ground terminal 281. In the current embodiment, the number of the switching devices 283 may be two, and the ground terminal 281 is connected to both ends of the ground terminal 281 via the switching device 283, respectively. Although two switching devices 283 are illustrated, the number of switching devices 283 can be varied. Additionally, the switching device 283 can be positioned proximate to the ground terminal 281 to minimize the distance between the switching device 283 and the ground terminal 281. In this case, when a spark is generated in a high voltage state such as an electrostatic discharge state, the high voltage current can quickly flow to the ground terminal 281 via the protective pattern 282. The switching device 283 may include one of a Zener diode, an inductor, and a variable resistor (varistor).

上述實例實施例之記憶卡可更包含輔助電源供應器6101，其用於在發生突然斷電事件時，穩定地執行突然斷電操作(諸如，資料備份操作)。圖44說明包含輔助電源供應器1601之實例記憶卡。參看圖44，輔助電源供應器1601包含第一超級電容器6111、第二超級電容器6112、充電電路6120、開關6130、電壓偵測器6140以及控制電路6150。The memory card of the above-described example embodiment may further include an auxiliary power supply 6101 for stably performing a sudden power-off operation (such as a material backup operation) when a sudden power-off event occurs. Figure 44 illustrates an example memory card containing an auxiliary power supply 1601. Referring to FIG. 44, the auxiliary power supply 1601 includes a first super capacitor 6111, a second super capacitor 6112, a charging circuit 6120, a switch 6130, a voltage detector 6140, and a control circuit 6150.

第一超級電容器6111以及第二超級電容器6112可為可儲存高容量電荷之電源儲存裝置。當所述記憶卡通電或按照正常狀態操作時，可對第一超級電容器6111以及第二超級電容器6112充電。第一超級電容器6111以及第二超級電容器6112中所儲存之電荷可作為輔助電源而供應至內部電路6102。第一超級電容器6111以及第二超級電容器6112之電容可根據時間而減小。若第一超級電容器6111歸因於其電容之減小而無法使用，則可能會不良地進行所述記憶卡之突然斷電操作。在此狀況下，第二超級電容器6112可供應輔助電源，並且可正常地進行所述記憶卡之突然斷電操作。The first supercapacitor 6111 and the second ultracapacitor 6112 can be power storage devices that can store high capacity charges. The first ultracapacitor 6111 and the second ultracapacitor 6112 may be charged when the memory card is operated or in a normal state. The charge stored in the first super capacitor 6111 and the second super capacitor 6112 can be supplied to the internal circuit 6102 as an auxiliary power source. The capacitances of the first supercapacitor 6111 and the second supercapacitor 6112 may decrease according to time. If the first supercapacitor 6111 cannot be used due to a decrease in its capacitance, the sudden power-off operation of the memory card may be performed poorly. In this case, the second ultracapacitor 6112 can supply an auxiliary power source, and the sudden power-off operation of the memory card can be normally performed.

可依序供應第一超級電容器6111以及第二超級電容器6112之輔助電源。亦即，若第一超級電容器6111歸因於降級(degradation)而無法使用，則使用第二超級電容器6112。接地電路GND可連接至第二超級電容器6112。接地電路GND用以在第一超級電容器6111得以使用時對第二超級電容器6112放電。充電電路6120用以對第一超級電容器6111以及第二超級電容器6112充電。充電電路6120可包含內部電源供應器(未圖示)。在此狀況下，充電電路6120可藉由使用內部電源供應器而對第一超級電容器6111以及第二超級電容器6112充電。The auxiliary power source of the first super capacitor 6111 and the second super capacitor 6112 may be sequentially supplied. That is, if the first supercapacitor 6111 cannot be used due to degradation, the second ultracapacitor 6112 is used. The ground circuit GND can be connected to the second ultracapacitor 6112. The ground circuit GND is used to discharge the second ultracapacitor 6112 when the first supercapacitor 6111 is used. The charging circuit 6120 is configured to charge the first ultracapacitor 6111 and the second ultracapacitor 6112. Charging circuit 6120 can include an internal power supply (not shown). In this case, the charging circuit 6120 can charge the first ultracapacitor 6111 and the second ultracapacitor 6112 by using an internal power supply.

或者，充電電路6120可藉由使用自外部電源供應器(未圖示)供應之電源而對第一超級電容器6111以及第二超級電容器6112充電。充電電路6120可經由充電路徑而將充電電流供應至第一超級電容器6111=以及第二超級電容器6112。開關6130連接於第二超級電容器6112與充電電路6120之間。開關6130可用以控制充電電流至第二超級電容器6112之供應。亦即，當開關6130接通時，充電電流供應至第二超級電容器6112，並且當開關6130斷開時，充電電流未供應至第二超級電容器6112。此外，開關6130可用以控制第二超級電容器6112之放電。亦即，若開關6130接通，則自第二超級電容器6112供應放電電流，並且若開關6130斷開，則並未自第二超級電容器6112供應放電電流。第一超級電容器6111以及第二超級電容器6112可經由放電路徑而供應放電電流。Alternatively, the charging circuit 6120 can charge the first ultracapacitor 6111 and the second ultracapacitor 6112 by using a power source supplied from an external power supply (not shown). Charging circuit 6120 can be via a charging path The charging current is supplied to the first ultracapacitor 6111= and the second supercapacitor 6112. The switch 6130 is connected between the second ultracapacitor 6112 and the charging circuit 6120. Switch 6130 can be used to control the supply of charging current to second supercapacitor 6112. That is, when the switch 6130 is turned on, the charging current is supplied to the second ultracapacitor 6112, and when the switch 6130 is turned off, the charging current is not supplied to the second ultracapacitor 6112. Additionally, switch 6130 can be used to control the discharge of second supercapacitor 6112. That is, if the switch 6130 is turned on, the discharge current is supplied from the second super capacitor 6112, and if the switch 6130 is turned off, the discharge current is not supplied from the second super capacitor 6112. The first super capacitor 6111 and the second super capacitor 6112 can pass through a discharge path The discharge current is supplied.

電壓偵測器6140可偵測第一超級電容器6111以及第二超級電容器6112之充電電壓或放電電壓。電壓偵測器6140可藉由在第一超級電容器6111或第二超級電容器6112充電或放電時量測N節點之電壓來偵測充電電壓或放電電壓。The voltage detector 6140 can detect the charging voltage or the discharging voltage of the first super capacitor 6111 and the second super capacitor 6112. The voltage detector 6140 can detect the charging voltage or the discharging voltage by measuring the voltage of the N node when the first super capacitor 6111 or the second super capacitor 6112 is charged or discharged.

控制電路6150控制所述接地電路GND、充電電路6120、開關6130以及電壓偵測器6140。在使用第一超級電容器6111時，控制電路6150控制所述接地電路GND，以使得第二超級電容器6112放電。此外，控制電路6150控制充電電路6120，以使得充電電流供應至第一超級電容器6111以及第二超級電容器6112。該控制電路6150可控制開關6130以便不使用第二超級電容器6112。舉例而言，若第一超級電容器6111之電容充足，則根據該控制電路6150之控制，可不使用第二超級電容器6112。當並未使用第二超級電容器6112時，不必要地儲存於第二超級電容器6112中之電荷可根據該控制電路6150之控制而經由所述接地電路GND完全放電。該控制電路6150可根據接收自電壓偵測器6140之充電電壓或放電電壓來計算等效串聯電阻ESR。ESR為自N節點至第一超級電容器6111或第二超級電容器6112之電阻成分。當充電電流供應至第一超級電容器6111時，N節點之電壓歸因於ESR而於一預定時間急劇地增加。可藉由使用充電電流Ic以及N節點電壓Vn來計算ESR。The control circuit 6150 controls the ground circuit GND, the charging circuit 6120, the switch 6130, and the voltage detector 6140. When the first super capacitor 6111 is used, the control circuit 6150 controls the ground circuit GND to discharge the second ultracapacitor 6112. Further, the control circuit 6150 controls the charging circuit 6120 to supply a charging current to the first super capacitor 6111 and the second super capacitor 6112. The control circuit 6150 can control the switch 6130 so as not to use the second ultracapacitor 6112. For example, if the capacitance of the first supercapacitor 6111 is sufficient, the second supercapacitor 6112 may not be used according to the control of the control circuit 6150. When the second ultracapacitor 6112 is not used, the charge unnecessarily stored in the second ultracapacitor 6112 can be completely discharged via the grounding circuit GND according to the control of the control circuit 6150. The control circuit 6150 can calculate the equivalent series resistance ESR according to the charging voltage or the discharging voltage received from the voltage detector 6140. The ESR is a resistance component from the N node to the first supercapacitor 6111 or the second supercapacitor 6112. When the charging current is supplied to the first super capacitor 6111, the voltage of the N node sharply increases at a predetermined time due to the ESR. The ESR can be calculated by using the charging current Ic and the N-node voltage Vn.

該控制電路6150可自電壓偵測器6140接收充電或放電電壓以計算第一超級電容器6111或第二超級電容器6112之電容。舉例而言，控制電路6150可自充電電流、充電時間以及N節點電壓Vn來計算第一超級電容器6111之電容Cs1。控制電路6150可包含內部計時器(未圖示)以計算充電時間。該控制電路6150可藉由使用ESR以及第一超級電容器6111或第二超級電容器6112之電容而確定開關6130接通之時間。The control circuit 6150 can receive a charge or discharge voltage from the voltage detector 6140 to calculate the capacitance of the first super capacitor 6111 or the second super capacitor 6112. For example, the control circuit 6150 can calculate the capacitance Cs1 of the first super capacitor 6111 from the charging current, the charging time, and the N-node voltage Vn. Control circuit 6150 can include an internal timer (not shown) to calculate the charging time. The control circuit 6150 can determine the time at which the switch 6130 is turned on by using the ESR and the capacitance of the first supercapacitor 6111 or the second supercapacitor 6112.

上述實例實施例之記憶卡可更包含旁路襯墊(pad)。所述旁路襯墊可電性連接至記憶體晶片。操作者可經由所述旁路襯墊來測試記憶體晶片之電特性。圖45至圖47說明包含旁路襯墊2040之實例記憶卡2000。圖45為記憶卡2000之仰視圖。圖46為說明在自記憶卡2000卸除保護罩2044時之記憶卡2000的視圖，並且圖47為沿圖45之線B-B'截取之剖視圖。The memory card of the above example embodiment may further include a bypass pad. The bypass pad can be electrically connected to the memory chip. The operator can test the electrical characteristics of the memory chip via the bypass pad. 45 through 47 illustrate an example memory card 2000 that includes a bypass pad 2040. 45 is a bottom view of the memory card 2000. Fig. 46 is a view for explaining the memory card 2000 when the protective cover 2044 is removed from the memory card 2000, and Fig. 47 is a cross-sectional view taken along line BB' of Fig. 45.

參看圖45至圖47，記憶卡2000可具有類似於圖1至圖3中所說明之記憶卡200之薄平行六面體形狀的薄平行六面體形狀。記憶卡2000之互連端子2038的位置可類似於圖1至圖3中所說明之記憶卡200之互連端子238。控制器晶片2036以及記憶體晶片2034可按照使得控制器晶片2036在水平方向上與記憶體晶片2034間隔開的方式而安裝於電路板2030上。或者，如同圖1至圖3中所說明之記憶卡200的狀況，控制器晶片2036可安置於記憶體晶片2034上。互連線2039可形成於電路板2030中，並且控制器晶片2036以及記憶體晶片2034可經由互連線2039以及導線2048而彼此連接。旁路襯墊2040設置於電路板2030之底面上。旁路襯墊2040連接至自互連線2039延伸之旁路線2042。若記憶卡2000異常地操作，則操作者可經由旁路襯墊2040來測試記憶卡2000之功能以檢查記憶卡2000之錯誤。Referring to Figures 45 through 47, the memory card 2000 can have a thin parallelepiped shape similar to the thin parallelepiped shape of the memory card 200 illustrated in Figures 1-3. The location of the interconnect terminal 2038 of the memory card 2000 can be similar to the interconnect terminal 238 of the memory card 200 illustrated in Figures 1-3. The controller wafer 2036 and the memory wafer 2034 can be mounted on the circuit board 2030 in such a manner that the controller wafer 2036 is spaced apart from the memory wafer 2034 in the horizontal direction. Alternatively, controller wafer 2036 can be disposed on memory chip 2034 as is the case with memory card 200 illustrated in FIGS. 1-3. Interconnect lines 2039 can be formed in circuit board 2030, and controller wafer 2036 and memory wafer 2034 can be connected to each other via interconnect lines 2039 and wires 2048. The bypass pad 2040 is disposed on the bottom surface of the circuit board 2030. The bypass pad 2040 is connected to a bypass line 2042 that extends from the interconnect 2039. If the memory card 2000 operates abnormally, the operator can test the function of the memory card 2000 via the bypass pad 2040 to check for errors in the memory card 2000.

此外，保護罩2044可經設置以使得旁路襯墊2040無法曝露於記憶卡2000之外部。保護罩2044覆蓋旁路襯墊2040。保護罩2044可按照絕緣層之形式加以設置。舉例而言，保護罩2044可由阻焊劑形成。亦即，電路板2030之底面可用阻焊劑來塗佈，以使得所有旁路襯墊2040可經覆蓋。若有必要測試記憶卡2000，則操作者可在藉由經由蝕刻或拋光來移除阻焊劑而曝露旁路襯墊2040後執行測試。該保護罩2044可為由絕緣材料形成之絕緣層，其可容易藉由選擇性蝕刻製程來移除。舉例而言，保護罩2044可由基於環氧樹脂之聚合物形成。或者，保護罩2044可由一種囊封(capsulation)材料形成。或者，保護罩2044可由絕緣膠帶形成。Additionally, the protective cover 2044 can be configured such that the bypass pad 2040 cannot be exposed to the exterior of the memory card 2000. The protective cover 2044 covers the bypass pad 2040. The protective cover 2044 can be provided in the form of an insulating layer. For example, the protective cover 2044 can be formed of a solder resist. That is, the bottom surface of the circuit board 2030 may be coated with a solder resist such that all of the bypass pads 2040 may be covered. If it is necessary to test the memory card 2000, the operator can perform the test after exposing the bypass liner 2040 by removing the solder resist by etching or polishing. The protective cover 2044 can be an insulating layer formed of an insulating material that can be easily removed by a selective etching process. For example, the protective cover 2044 can be formed from an epoxy based polymer. Alternatively, the protective cover 2044 can be formed from a capsulating material. Alternatively, the protective cover 2044 may be formed of an insulating tape.

圖48說明用於選擇性地使用記憶卡(諸如，圖26、圖29、圖30以及圖31中所說明之記憶卡)中之兩組互連端子中之一組的實例結構。圖48為記憶卡之示意性仰視圖。圖48之記憶卡具有類似於圖26中所說明之記憶卡1300之結構的結構。在所述記憶卡中，藉由使用控制器晶片2136之輸出信號Tx或輸入信號Rx經由第一互連端子2138a或第二互連端子2138b傳輸或接收自記憶體晶片接收或待儲存於記憶體晶片中之資料。僅一個控制器晶片2136可安裝於電路板2130上。第一電容器襯墊2171以及第二電容器襯墊2172可安置於控制器晶片2136與第一互連端子2138a之間。FIG. 48 illustrates an example structure for selectively using one of two sets of interconnection terminals in a memory card such as the memory card illustrated in FIGS. 26, 29, 30, and 31. Figure 48 is a schematic bottom view of the memory card. The memory card of Fig. 48 has a structure similar to that of the memory card 1300 illustrated in Fig. 26. In the memory card, the output signal Tx or the input signal Rx of the controller chip 2136 is transmitted or received from the memory chip via the first interconnect terminal 2138a or the second interconnect terminal 2138b or is to be stored in the memory. Information in the wafer. Only one controller chip 2136 can be mounted on the circuit board 2130. A first capacitor liner 2171 and a second capacitor liner 2172 can be disposed between the controller wafer 2136 and the first interconnect terminal 2138a.

第一電容器襯墊2171經設置以用於控制器晶片2136與第一互連端子2138a之間的電性連接。第一電容器襯墊2171包含第一襯墊2171a以及第二襯墊2171b。第一襯墊2171a以及第二襯墊2171b彼此間隔一預定距離並安置成面對彼此。第一信號線2162以及第二信號線2163形成於電路板2130上。控制器晶片2136以及第一襯墊2171a直接經由第一信號線2162而形成電性連接。第二襯墊2171b以及第一互連端子2138a直接經由第二信號線2163而形成電性連接。The first capacitor liner 2171 is configured for electrical connection between the controller wafer 2136 and the first interconnect terminal 2138a. The first capacitor liner 2171 includes a first gasket 2171a and a second gasket 2171b. The first pad 2171a and the second pad 2171b are spaced apart from each other by a predetermined distance and are disposed to face each other. The first signal line 2162 and the second signal line 2163 are formed on the circuit board 2130. The controller wafer 2136 and the first pad 2171a are electrically connected directly via the first signal line 2162. The second pad 2171b and the first interconnect terminal 2138a are electrically connected directly via the second signal line 2163.

第二電容器襯墊2172經設置以用於控制器晶片2136與第二互連端子2138b之間的電性連接。第二電容器襯墊2172包含第三襯墊2172a以及第四襯墊2172b。第三襯墊2172a以及第四襯墊2172b彼此間隔一預定距離並安置成面對彼此。第三信號線2164以及第四信號線2165形成於電路板2130上。第三信號線2164自第一信號線2162延伸並且電性連接至第三襯墊2172a。第四襯墊2172b以及第二互連端子2138b直接經由第四信號線2165而電性連接。A second capacitor liner 2172 is provided for electrical connection between the controller wafer 2136 and the second interconnect terminal 2138b. The second capacitor liner 2172 includes a third liner 2172a and a fourth liner 2172b. The third pad 2172a and the fourth pad 2172b are spaced apart from each other by a predetermined distance and are disposed to face each other. The third signal line 2164 and the fourth signal line 2165 are formed on the circuit board 2130. The third signal line 2164 extends from the first signal line 2162 and is electrically connected to the third pad 2172a. The fourth pad 2172b and the second interconnect terminal 2138b are electrically connected directly via the fourth signal line 2165.

第一襯墊2171a經由電容器2173而電性連接至第二襯墊2171b，或第三襯墊2172a經由電容器2173而電性連接至第四襯墊2172b。電容器2173可為DC阻隔電容器。若電容器2173連接於第一襯墊2171a與第二襯墊2171b之間，則所述記憶卡可經由第一互連端子2138a而連接至外部電子機器。若電容器2173連接於第三襯墊2172a與第四襯墊2172b之間，則所述記憶卡可經由第二互連端子2138b而連接至外部電子機器。The first pad 2171a is electrically connected to the second pad 2171b via the capacitor 2173, or the third pad 2172a is electrically connected to the fourth pad 2172b via the capacitor 2173. Capacitor 2173 can be a DC blocking capacitor. If the capacitor 2173 is connected between the first pad 2171a and the second pad 2171b, the memory card can be connected to an external electronic device via the first interconnect terminal 2138a. If the capacitor 2173 is connected between the third pad 2172a and the fourth pad 2172b, the memory card can be connected to the external electronic device via the second interconnect terminal 2138b.

在實例實施例中，所述記憶卡可為以下各者或可結合以下各者而加以使用：CompactFlash類型(例如，類型I或II)、SD記憶卡、miniSD、microSD、TransFlash、MultiMediaCard(MMC)、MMCplus、RS-MMC、DV RS-MMC、MMCmobile、MMCmicro、記憶棒、記憶棒PRO、記憶棒Duo、記憶棒PRO Duo、SmartMedia卡、xD-Picture卡、PC卡(例如，類型I、II或III)及/或USB隨身碟(Flash Drive)。In an example embodiment, the memory card may be used for or in combination with: CompactFlash type (for example, type I or II), SD memory card, miniSD, microSD, TransFlash, MultiMediaCard (MMC) , MMCplus, RS-MMC, DV RS-MMC, MMCmobile, MMCmicro, Memory Stick, Memory Stick PRO, Memory Stick Duo, Memory Stick PRO Duo, SmartMedia Card, xD-Picture Card, PC Card (for example, Type I, II or III) and / or USB flash drive (Flash Drive).

以上所揭露之標的物被認為是說明性且並非限制性的，且隨附申請專利範圍意欲涵蓋屬於發明概念之真實精神以及範圍內的所有此類修改、增強以及其他實施例。因此，在法律所允許之最大範圍內，發明概念之範圍應由以下申請專利範圍以及其等效物之最廣泛可准許的解釋來確定，且不應由以上詳細描述加以限定或限制。The above-identified subject matter is to be considered as illustrative and not limiting, and the scope of the invention is intended to be The scope of the inventive concept should be determined by the scope of the following claims and the broadest permissibility of the equivalents thereof, and should not be limited or limited by the above detailed description.

12．．．第一方向12. . . First direction

14．．．第二方向14. . . Second direction

16．．．第三方向16. . . Third direction

18．．．虛線18. . . dotted line

200．．．記憶卡200. . . Memory card

200'．．．記憶卡200'. . . Memory card

220．．．模製部件220. . . Molded part

230．．．電路板230. . . Circuit board

232．．．半導體晶片232. . . Semiconductor wafer

234．．．記憶體晶片234. . . Memory chip

236．．．控制器晶片236. . . Controller chip

238．．．互連端子238. . . Interconnect terminal

241．．．頂面241. . . Top surface

242．．．底面242. . . Bottom

243．．．正面243. . . positive

244．．．背面244. . . back

245．．．第一側面245. . . First side

246．．．第二側面246. . . Second side

280．．．保護器280. . . protector

281．．．接地端子281. . . Ground terminal

282．．．保護性圖案282. . . Protective pattern

283．．．開關裝置283. . . Switching device

300．．．記憶卡300. . . Memory card

312．．．突起312. . . Protrusion

338．．．互連端子338. . . Interconnect terminal

341．．．頂面341. . . Top surface

343．．．正面343. . . positive

344．．．背面344. . . back

345．．．第一側面345. . . First side

346．．．第二側面346. . . Second side

400．．．記憶卡400. . . Memory card

401．．．記憶卡401. . . Memory card

412．．．突起412. . . Protrusion

420．．．模製部件420. . . Molded part

430．．．電路板430. . . Circuit board

434．．．記憶體晶片434. . . Memory chip

436．．．控制器晶片436. . . Controller chip

438．．．互連端子438. . . Interconnect terminal

439．．．被動組件439. . . Passive component

441．．．頂面441. . . Top surface

442．．．底面442. . . Bottom

443．．．正面443. . . positive

445．．．第一側面445. . . First side

446．．．第二側面446. . . Second side

461．．．斜面461. . . Bevel

461a．．．斜面461a. . . Bevel

500．．．記憶卡500. . . Memory card

501．．．記憶卡501. . . Memory card

512．．．突起512. . . Protrusion

538．．．互連端子538. . . Interconnect terminal

541．．．頂面541. . . Top surface

542．．．底面542. . . Bottom

545．．．第一側面545. . . First side

546．．．第二側面546. . . Second side

546'．．．第二側面546'. . . Second side

561．．．斜面561. . . Bevel

562．．．凹口562. . . Notch

562a．．．凹口562a. . . Notch

700．．．記憶卡700. . . Memory card

712．．．突起712. . . Protrusion

720．．．模製部件720. . . Molded part

730．．．電路板730. . . Circuit board

734．．．記憶體晶片734. . . Memory chip

736．．．控制器晶片736. . . Controller chip

738．．．互連端子738. . . Interconnect terminal

739．．．被動組件739. . . Passive component

741．．．頂面741. . . Top surface

742．．．底面742. . . Bottom

743．．．正面743. . . positive

744．．．背面744. . . back

745．．．第一側面745. . . First side

746．．．第二側面746. . . Second side

763．．．第一凹槽763. . . First groove

764．．．第二凹槽764. . . Second groove

800．．．記憶卡800. . . Memory card

812．．．突起812. . . Protrusion

838．．．互連端子838. . . Interconnect terminal

841．．．頂面841. . . Top surface

842．．．底面842. . . Bottom

843．．．正面843. . . positive

845．．．側面845. . . side

846．．．側面846. . . side

863．．．第一凹槽863. . . First groove

864．．．第二凹槽864. . . Second groove

865．．．第一凹口865. . . First notch

866．．．第二凹口866. . . Second notch

900．．．記憶卡900. . . Memory card

912．．．突起912. . . Protrusion

938．．．互連端子938. . . Interconnect terminal

941．．．頂面941. . . Top surface

945．．．側面945. . . side

946．．．側面946. . . side

961．．．斜面961. . . Bevel

963．．．第一凹槽963. . . First groove

964．．．第二凹槽964. . . Second groove

1000．．．記憶卡1000. . . Memory card

1012．．．突起1012. . . Protrusion

1038．．．互連端子1038. . . Interconnect terminal

1041．．．頂面1041. . . Top surface

1042．．．底面1042. . . Bottom

1045．．．第一側面1045. . . First side

1046．．．第二側面1046. . . Second side

1061．．．斜面1061. . . Bevel

1063．．．凹槽1063. . . Groove

1066．．．凹口1066. . . Notch

1100．．．記憶卡1100. . . Memory card

1138．．．互連端子1138. . . Interconnect terminal

1138a．．．電源端子1138a. . . Power terminal

1138b．．．其他端子1138b. . . Other terminals

1143．．．正面1143. . . positive

1144．．．背面1144. . . back

1200．．．記憶卡1200. . . Memory card

1238．．．互連端子1238. . . Interconnect terminal

1242．．．底面1242. . . Bottom

1242a．．．其他區域1242a. . . Other areas

1242b．．．保護區域1242b. . . Protected area

1243．．．正面1243. . . positive

1245．．．第一側面1245. . . First side

1246．．．第二側面1246. . . Second side

1300．．．記憶卡1300. . . Memory card

1338．．．互連端子1338. . . Interconnect terminal

1338a．．．第一組互連端子1338a. . . First set of interconnect terminals

1338b．．．第二組互連端子1338b. . . Second set of interconnect terminals

1343．．．正面1343. . . positive

1400．．．記憶卡1400. . . Memory card

1438．．．互連端子1438. . . Interconnect terminal

1438a．．．第一組互連端子1438a. . . First set of interconnect terminals

1438b．．．第二組互連端子1438b. . . Second set of interconnect terminals

1500．．．記憶卡1500. . . Memory card

1538a．．．第一組互連端子1538a. . . First set of interconnect terminals

1538b．．．第二組互連端子1538b. . . Second set of interconnect terminals

1542．．．底面1542. . . Bottom

1543．．．正面1543. . . positive

1544．．．背面1544. . . back

1600．．．記憶卡1600. . . Memory card

1638a．．．第一組互連端子1638a. . . First set of interconnect terminals

1638b．．．第二組互連端子1638b. . . Second set of interconnect terminals

1641．．．頂面1641. . . Top surface

1642．．．底面1642. . . Bottom

1643．．．正面1643. . . positive

1700．．．記憶卡1700. . . Memory card

1712．．．突起1712. . . Protrusion

1741．．．頂面1741. . . Top surface

1743．．．正面1743. . . positive

1745．．．第一側面1745. . . First side

1746．．．第二側面1746. . . Second side

1758．．．凸起部分1758. . . Raised portion

1759．．．凹陷部分1759. . . Sag part

1800．．．記憶卡1800. . . Memory card

1801．．．外殼1801. . . shell

1810．．．上罩蓋1810. . . Upper cover

1820．．．下罩蓋1820. . . Lower cover

1822．．．開口1822. . . Opening

1830．．．電路板1830. . . Circuit board

1834．．．半導體晶片1834. . . Semiconductor wafer

1836．．．半導體晶片1836. . . Semiconductor wafer

1838．．．互連端子1838. . . Interconnect terminal

2000．．．記憶卡2000. . . Memory card

2030．．．電路板2030. . . Circuit board

2034．．．記憶體晶片2034. . . Memory chip

2036．．．控制器晶片2036. . . Controller chip

2038．．．互連端子2038. . . Interconnect terminal

2039．．．互連線2039. . . Interconnect

2040．．．旁路襯墊2040. . . Bypass liner

2042．．．旁路線2042. . . Bypass line

2044．．．保護罩2044. . . Protective cover

2048．．．導線2048. . . wire

2100．．．第一電子機器2100. . . First electronic machine

2120．．．插口2120. . . socket

2122．．．入口2122. . . Entrance

2130．．．電路板2130. . . Circuit board

2136．．．控制器晶片2136. . . Controller chip

2138a．．．第一互連端子2138a. . . First interconnect terminal

2138b．．．第二互連端子2138b. . . Second interconnect terminal

2140．．．互連端子2140. . . Interconnect terminal

2162．．．第一信號線2162. . . First signal line

2163．．．第二信號線2163. . . Second signal line

2164．．．第三信號線2164. . . Third signal line

2165．．．第四信號線2165. . . Fourth signal line

2171．．．第一電容器襯墊2171. . . First capacitor liner

2171a．．．第一襯墊2171a. . . First pad

2171b．．．第二襯墊2171b. . . Second pad

2172．．．第二電容器襯墊2172. . . Second capacitor liner

2172a．．．第三襯墊2172a. . . Third pad

2172b．．．第四襯墊2172b. . . Fourth pad

2173．．．電容器2173. . . Capacitor

2200．．．第二電子機器2200. . . Second electronic machine

2220．．．插口2220. . . socket

2222．．．入口2222. . . Entrance

2240．．．互連端子2240. . . Interconnect terminal

3100．．．第一電子機器3100. . . First electronic machine

3120．．．插口3120. . . socket

3140．．．互連端子3140. . . Interconnect terminal

3200．．．第二電子機器3200. . . Second electronic machine

3220．．．插口3220. . . socket

3240．．．互連端子3240. . . Interconnect terminal

5100．．．電子機器5100. . . Electronic machine

5120．．．插口5120. . . socket

5122．．．入口5122. . . Entrance

5140．．．互連端子5140. . . Interconnect terminal

5140a．．．第一組互連端子5140a. . . First set of interconnect terminals

5140b．．．第二組互連端子5140b. . . Second set of interconnect terminals

5150．．．記憶卡5150. . . Memory card

5152．．．互連端子5152. . . Interconnect terminal

5160．．．記憶卡5160. . . Memory card

5162．．．互連端子5162. . . Interconnect terminal

5200．．．電子機器5200. . . Electronic machine

5220．．．插口5220. . . socket

5222．．．入口5222. . . Entrance

5240．．．互連端子5240. . . Interconnect terminal

5240a．．．第一組互連端子5240a. . . First set of interconnect terminals

5240b．．．第二組互連端子5240b. . . Second set of interconnect terminals

5300．．．電子機器5300. . . Electronic machine

5320．．．插口5320. . . socket

5360．．．突起5360. . . Protrusion

5400．．．電子機器5400. . . Electronic machine

5420．．．插口5420. . . socket

5460．．．突起5460. . . Protrusion

6101．．．輔助電源供應器6101. . . Auxiliary power supply

6102．．．內部電路6102. . . Internal circuit

6111．．．第一超級電容器6111. . . First supercapacitor

6112．．．第二超級電容器6112. . . Second supercapacitor

6120．．．充電電路6120. . . Charging circuit

6130．．．開關6130. . . switch

6140．．．電壓偵測器6140. . . Voltage detector

6150．．．控制電路6150. . . Control circuit

Rx．．．輸入信號Rx. . . input signal

Tx．．．輸出信號Tx. . . output signal

圖1為說明根據發明概念之實例實施例之記憶卡的俯視透視圖。1 is a top perspective view illustrating a memory card in accordance with an example embodiment of the inventive concept.

圖2為圖1中所說明之記憶卡的仰視透視圖。Figure 2 is a bottom perspective view of the memory card illustrated in Figure 1.

圖3為沿圖1之線A-A'截取之剖視圖。Figure 3 is a cross-sectional view taken along line A-A' of Figure 1.

圖4為說明圖1之記憶卡之另一實例實施例的俯視透視圖。4 is a top perspective view illustrating another example embodiment of the memory card of FIG. 1.

圖5為說明圖4之記憶卡的仰視透視圖。Figure 5 is a bottom perspective view illustrating the memory card of Figure 4;

圖6為說明圖1之記憶卡之另一實例實施例的俯視透視圖。6 is a top perspective view illustrating another example embodiment of the memory card of FIG. 1.

圖7為說明圖6之記憶卡的仰視透視圖。Figure 7 is a bottom perspective view illustrating the memory card of Figure 6.

圖8為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 8 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖9以及圖10為用於說明圖8之記憶卡之記憶體晶片以及控制器晶片的前視圖以及俯視圖。9 and 10 are a front view and a plan view for explaining a memory chip and a controller wafer of the memory card of Fig. 8.

圖11為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 11 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖12為說明圖11之記憶卡的仰視透視圖。Figure 12 is a bottom perspective view illustrating the memory card of Figure 11;

圖13為說明圖1之記憶卡之另一實例實施例的仰視透視圖。Figure 13 is a bottom perspective view illustrating another example embodiment of the memory card of Figure 1.

圖14為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 14 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖15為說明圖13之記憶卡的仰視透視圖。Figure 15 is a bottom perspective view illustrating the memory card of Figure 13;

圖16以及圖17為用於說明圖14之記憶卡之記憶體晶片以及控制器晶片的前視圖以及俯視圖。16 and 17 are a front view and a plan view for explaining a memory chip and a controller wafer of the memory card of Fig. 14.

圖18為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 18 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖19為說明圖18之記憶卡的仰視透視圖。Figure 19 is a bottom perspective view illustrating the memory card of Figure 18.

圖20為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 20 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖21為說明圖20之記憶卡的仰視透視圖。Figure 21 is a bottom perspective view illustrating the memory card of Figure 20.

圖22為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 22 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖23為說明圖22之記憶卡的仰視透視圖。Figure 23 is a bottom perspective view illustrating the memory card of Figure 22;

圖24為說明圖1之記憶卡之另一實例實施例的仰視透視圖。Figure 24 is a bottom perspective view illustrating another example embodiment of the memory card of Figure 1.

圖25為說明圖1之記憶卡之另一實例實施例的仰視透視圖。Figure 25 is a bottom perspective view illustrating another example embodiment of the memory card of Figure 1.

圖26為說明圖1之記憶卡之另一實例實施例的仰視透視圖。Figure 26 is a bottom perspective view illustrating another example embodiment of the memory card of Figure 1.

圖27為說明圖1之記憶卡之另一實例實施例的仰視透視圖。Figure 27 is a bottom perspective view illustrating another example embodiment of the memory card of Figure 1.

圖28為可與圖26之記憶卡一起使用的根據實例實施例之電子機器的示意性透視圖。28 is a schematic perspective view of an electronic machine in accordance with an example embodiment that can be used with the memory card of FIG.

圖29為說明圖1之記憶卡之另一實例實施例的仰視透視圖。Figure 29 is a bottom perspective view illustrating another example embodiment of the memory card of Figure 1.

圖30為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 30 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖31為說明圖30之記憶卡的仰視透視圖。Figure 31 is a bottom perspective view illustrating the memory card of Figure 30.

圖32為說明可與圖30之記憶卡一起使用的根據實例實施例之電子機器的示意性透視圖。32 is a schematic perspective view illustrating an electronic machine in accordance with an example embodiment that can be used with the memory card of FIG.

圖33為說明圖1之記憶卡之另一實例實施例的俯視透視圖。Figure 33 is a top perspective view illustrating another example embodiment of the memory card of Figure 1.

圖34為說明圖33之記憶卡的仰視透視圖。Figure 34 is a bottom perspective view illustrating the memory card of Figure 33.

圖35為說明圖1之記憶卡之另一實例實施例的分解透視圖。Figure 35 is an exploded perspective view showing another example embodiment of the memory card of Figure 1.

圖36為說明根據發明概念之實例實施例之電子機器的示意性透視圖。36 is a schematic perspective view illustrating an electronic machine according to an example embodiment of the inventive concept.

圖37為可與圖36之電子機器一起使用的根據實例實施例之記憶卡的透視圖。37 is a perspective view of a memory card in accordance with an example embodiment that can be used with the electronic machine of FIG.

圖38為說明圖36之電子機器之另一實例實施例的示意性透視圖。Figure 38 is a schematic perspective view illustrating another example embodiment of the electronic machine of Figure 36.

圖39為說明可與圖8之記憶卡一起使用的根據實例實施例之電子機器的透視圖。Figure 39 is a perspective view illustrating an electronic machine in accordance with an example embodiment that can be used with the memory card of Figure 8.

圖40為說明可與圖14之記憶卡一起使用的根據實例實施例之電子機器的透視圖。40 is a perspective view illustrating an electronic machine in accordance with an example embodiment that can be used with the memory card of FIG.

圖41以及圖42為說明可用於上述記憶卡中之根據實例實施例之記憶體晶片的視圖。41 and 42 are views for explaining a memory wafer according to an example embodiment which can be used in the above memory card.

圖43為說明設有保護器之根據實例實施例之記憶卡的示意圖。Figure 43 is a schematic view showing a memory card according to an example embodiment provided with a protector.

圖44為說明具備輔助電源供應器之記憶卡的示意圖。Figure 44 is a diagram showing a memory card having an auxiliary power supply.

圖45為說明根據實例實施例之包含旁路襯墊之記憶卡的仰視圖。45 is a bottom view illustrating a memory card including a bypass pad, in accordance with an example embodiment.

圖46為說明在自記憶卡卸除保護罩時之圖45之記憶卡的視圖。Figure 46 is a view for explaining the memory card of Figure 45 when the protective cover is removed from the memory card.

圖47為沿圖45之線B-B'截取之剖視圖。Figure 47 is a cross-sectional view taken along line BB' of Figure 45.

圖48為說明根據實例實施例之用於選擇性地使用記憶卡之兩組互連端子中之一組的結構的視圖。FIG. 48 is a view illustrating a structure of one of two sets of interconnection terminals for selectively using a memory card, according to an example embodiment.

12．．．第一方向12. . . First direction

14．．．第二方向14. . . Second direction

16．．．第三方向16. . . Third direction

200．．．記憶卡200. . . Memory card

241．．．頂面241. . . Top surface

243．．．正面243. . . positive

244．．．背面244. . . back

245．．．第一側面245. . . First side

246．．．第二側面246. . . Second side

Claims (19)

一種記憶卡，其包括：正面、背面、第一側面、第二側面、頂面以及底面；所述頂面以及所述底面中之至少一者上的第一組互連端子，所述第一組互連端子經組態以操作性地與外部電子機器連接，其中所述第一組互連端子中之每一者具有平行於第一方向之長度，並且所述第一組互連端子是沿著第二方向而配置，並且所述第一組互連端子中之至少一些分別與所述正面間隔開大於所述互連端子之長度的距離；以及第二組互連端子，所述第二組互連端子平行所述第一組互連端子，其中，所述第一組互連端子用以插入第一電子機器的插口以與所述第一電子機器電連接，所述第二組互連端子用以插入第二電子機器的插口以與所述第二電子機器電連接，且其中，所述第一組互連端子包括電源端子與接地端子，所述第二組互連端子亦包括電源端子與接地端子。 A memory card comprising: a front side, a back side, a first side, a second side, a top side, and a bottom surface; a first set of interconnecting terminals on at least one of the top surface and the bottom surface, the first The set of interconnect terminals are configured to be operatively coupled to an external electronic device, wherein each of the first set of interconnect terminals has a length parallel to the first direction, and the first set of interconnect terminals is Arranged along a second direction, and at least some of the first set of interconnecting terminals are spaced apart from the front surface by a distance greater than a length of the interconnecting terminal; and a second set of interconnecting terminals, the Two sets of interconnecting terminals are parallel to the first set of interconnecting terminals, wherein the first set of interconnecting terminals are for inserting a socket of a first electronic machine to electrically connect with the first electronic machine, the second set An interconnecting terminal for inserting a socket of the second electronic device to be electrically connected to the second electronic device, and wherein the first set of interconnecting terminals includes a power terminal and a grounding terminal, and the second group of interconnecting terminals is also Includes power terminals and ground terminals. 如申請專利範圍第1項所述之記憶卡，更包括一第一凹槽處於所述頂面中，所述第一凹槽之末端延伸至所述正面。 The memory card of claim 1, further comprising a first recess in the top surface, the end of the first recess extending to the front surface. 如申請專利範圍第2項所述之記憶卡，其中所述第一凹槽具有平行於所述第一方向之長度，並且所述第一凹槽之面延伸至所述第一側面。 The memory card of claim 2, wherein the first groove has a length parallel to the first direction, and a face of the first groove extends to the first side. 如申請專利範圍第2項所述之記憶卡，更包括一凹口處於所述頂面中，所述凹口比所述第一凹槽接近於所述背面。 The memory card of claim 2, further comprising a notch in the top surface, the notch being closer to the back than the first groove. 如申請專利範圍第2項所述之記憶卡，更包括一第二凹槽處於所述頂面中。 The memory card of claim 2, further comprising a second recess in the top surface. 如申請專利範圍第2項所述之記憶卡，其中所述記憶卡實質上為矩形，並且所述第一方向垂直於所述正面。 The memory card of claim 2, wherein the memory card is substantially rectangular and the first direction is perpendicular to the front side. 如申請專利範圍第2項所述之記憶卡，其更包括：所述底面上之控制器晶片以及至少一個記憶體晶片，其中所述控制器晶片處於所述記憶體晶片上，並且所述記憶體晶片之一部分處於所述第一凹槽正下方。 The memory card of claim 2, further comprising: a controller chip on the bottom surface and at least one memory chip, wherein the controller wafer is on the memory chip, and the memory A portion of the body wafer is directly below the first recess. 如申請專利範圍第7項所述之記憶卡，其中所述控制器晶片之一部分處於所述第一凹槽上方。 The memory card of claim 7, wherein a portion of the controller wafer is above the first recess. 如申請專利範圍第1項所述之記憶卡，更包括一斜面在所述頂面中位於所述正面與所述第一側面之間，且達到所述底面上方的深度。 The memory card of claim 1, further comprising a bevel in the top surface between the front surface and the first side surface and reaching a depth above the bottom surface. 如申請專利範圍第9項所述之記憶卡，其更包括：所述底面上之控制器晶片以及至少一個記憶體晶片，其中所述控制器晶片處於所述記憶體晶片上，記憶體晶片之一部分處於所述斜面正下方，並且所述控制器晶片之一部分處於所述斜面之底部上方。 The memory card of claim 9, further comprising: a controller chip on the bottom surface and at least one memory chip, wherein the controller chip is on the memory chip, and the memory chip A portion is directly below the bevel and a portion of the controller wafer is above the bottom of the bevel. 如申請專利範圍第1項所述之記憶卡，更包括一凹口形成於所述頂面中，所述凹口之深度處於所述底面上 方。 The memory card of claim 1, further comprising a notch formed in the top surface, the depth of the notch being on the bottom surface square. 如申請專利範圍第1項所述之記憶卡，更包括一凹槽處於所述頂面中並且相比於所述第二側面較接近於所述第一側面，且包括一凹口處於所述頂面中並且相比於所述第一側面較接近於所述第二側面，所述凹槽之末端延伸至所述正面，並且所述凹口之末端與所述正面間隔開，並且所述凹口之另一末端與所述背面間隔開。 The memory card of claim 1, further comprising a recess in the top surface and being closer to the first side than the second side, and including a notch in the In the top surface and closer to the second side than the first side, the end of the groove extends to the front side, and the end of the notch is spaced apart from the front side, and The other end of the recess is spaced from the back side. 如申請專利範圍第1項所述之記憶卡，其中所述第一組互連端子包括電源互連端子以及其他電源互連端子，並且所述電源互連端子中之一者或多者比所述其他互連端子長兩倍或兩倍以上並且比所述其他互連端子接近於所述正面。 The memory card of claim 1, wherein the first set of interconnect terminals comprises a power interconnect terminal and other power interconnect terminals, and one or more of the power interconnect terminals The other interconnect terminals are two or more times longer and are closer to the front than the other interconnect terminals. 如申請專利範圍第1項所述之記憶卡，其中所述第一組互連端子之所述長度相等，並且所述第一組互連端子中之每一者與所述正面間隔相同距離。 The memory card of claim 1, wherein the lengths of the first set of interconnecting terminals are equal, and each of the first set of interconnecting terminals is spaced the same distance from the front side. 如申請專利範圍第1項所述之記憶卡，其更包括：處於所述底面上之印刷電路板；處於所述印刷電路板上之半導體晶片；以及模製部件，其經組態以覆蓋所述印刷電路板以及所述半導體晶片之頂表面。 The memory card of claim 1, further comprising: a printed circuit board on the bottom surface; a semiconductor wafer on the printed circuit board; and a molded component configured to cover the A printed circuit board and a top surface of the semiconductor wafer. 如申請專利範圍第15項所述之記憶卡，其中所述模製部件包含所述正面、所述背面、所述第一側面、所述 第二側面以及所述頂面。 The memory card of claim 15, wherein the molded component comprises the front surface, the back surface, the first side, and the a second side and the top surface. 如申請專利範圍第1項所述之記憶卡，其中所述第二組互連端子平行於所述第一組互連端子。 The memory card of claim 1, wherein the second set of interconnecting terminals are parallel to the first set of interconnecting terminals. 如申請專利範圍第17項所述之記憶卡，其中所述第二組互連端子處於所述正面與所述第一組互連端子之間。 The memory card of claim 17, wherein the second set of interconnecting terminals are between the front side and the first set of interconnecting terminals. 如申請專利範圍第17項所述之記憶卡，其中所述第一組互連端子之數目不同於所述第二組互連端子之數目。The memory card of claim 17, wherein the number of the first set of interconnect terminals is different from the number of the second set of interconnect terminals.
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