CN105279096B - Module and memory storage apparatus is electroplated with it in system-in-package structure - Google Patents
Module and memory storage apparatus is electroplated with it in system-in-package structure Download PDFInfo
- Publication number
- CN105279096B CN105279096B CN201410316893.0A CN201410316893A CN105279096B CN 105279096 B CN105279096 B CN 105279096B CN 201410316893 A CN201410316893 A CN 201410316893A CN 105279096 B CN105279096 B CN 105279096B
- Authority
- CN
- China
- Prior art keywords
- conducting wire
- electrically connected
- interface
- wiring layer
- connection pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
The present invention provides a kind of system-in-package structure and module and memory storage apparatus is electroplated with it.This system-in-package structure includes the first wiring layer, the second wiring layer and reproducible nonvolatile memorizer module.First wiring layer includes the first connection pad and conducting wire.First connection pad is adjacent to the first side of the first wiring layer, and the first connection pad is electrically connected to ground voltage.One end of conducting wire is electrically connected to the first connection pad, and the other end of conducting wire is electrically connected the interface of so far system-in-package structure, wherein this interface is located at the second side on the first wiring layer relative to first side, and this interface is electrically connected to external voltage.
Description
Technical field
The invention relates to a kind of encapsulating structures, and in particular to a kind of system-in-package structure and its electroplating mould
Block and memory storage apparatus.
Background technique
Digital camera, mobile phone and MP3 player are very rapid in growth over the years, so that consumer is to storage
The demand of media also rapidly increases.Since reproducible nonvolatile memorizer module (for example, flash memory) has data
It is non-volatile, power saving, small in size, and without characteristics such as mechanical structures, so loaded on above-mentioned illustrated various in being very suitable to
In portable multimedia device.
In general, in the production phase, multiple SD cards can be arranged on a support frame, with simultaneously to these SD cards into
Row plating.It can there are electrically conductive one however, after cutting off these SD cards from support frame, in each SD card
Or multiple openings.When user plugs this SD card, these imported electrostatic that are open may interfere SD card.
Summary of the invention
The present invention provides a kind of system-in-package structure and module and memory storage apparatus is electroplated with it, can reduce electrostatic
Electric discharge (Electro Static Discharge, abbreviation ESD) interference.
One example of the present invention embodiment provides a kind of system in package (System in Package, abbreviation SIP) knot
Structure comprising the first wiring layer, the second wiring layer and reproducible nonvolatile memorizer module.First wiring layer includes first
Connection pad and conducting wire.First connection pad is adjacent to the first side of the first wiring layer, and the first connection pad is electrically connected to ground connection electricity
Pressure.One end of conducting wire is electrically connected to the first connection pad, and the other end of conducting wire is electrically connected so far system-in-package structure
Interface, wherein this interface is located at the second side on the first wiring layer relative to first side, and this interface is electrically to connect
It is connected to external voltage.Second wiring layer is arranged with respect to the first wiring layer.Reproducible nonvolatile memorizer module is set to
On one wiring layer or the second wiring layer.
In one example of the present invention embodiment, the conducting wire include the first conducting wire and the second conducting wire, the one of the first conducting wire
End is electrically connected to interface, and the other end of the first conducting wire is electrically connected to the input terminal of capacitor cell, the output end of capacitor cell
It is electrically connected to one end of the second conducting wire, and the other end of the second conducting wire is electrically connected to the first connection pad.
In one example of the present invention embodiment, the conducting wire further includes privates, and one end of privates electrically connects
It is connected to the input terminal of capacitor cell, and the other end of privates is electrically connected to the output end of capacitor cell.
In one example of the present invention embodiment, the interface is to be connected to support frame, and support frame is to via connecing
Mouth provides external voltage to system-in-package structure.
In one example of the present invention embodiment, first wiring layer further includes at least one second connection pad, and described second
Connection pad is adjacent to the first side of the first wiring layer, and the first connection pad and second connection pad are electrically connected to host system
System.
In one example of the present invention embodiment, the interface includes first interface and second interface, and the first wiring layer is also
Including conducting wire of contacting, the conducting wire is electrically connected to first interface and second interface via series winding conducting wire simultaneously.
One example of the present invention embodiment provides a kind of memory storage apparatus comprising system-in-package structure with can answer
Write formula non-volatile memory module.System-in-package structure includes the first wiring layer and the second wiring layer.First wiring layer packet
Include the first connection pad and conducting wire.First connection pad is adjacent to the first side of the first wiring layer, and the first connection pad is electrically connected to
Ground voltage.One end of conducting wire is electrically connected to the first connection pad, and the other end of conducting wire is electrically connected to system in package knot
The interface of structure, wherein interface is located at the second side on the first wiring layer relative to first side, and interface is electrically to connect
It is connected to external voltage.Second wiring layer is arranged with respect to the first wiring layer.Reproducible nonvolatile memorizer module is set to
On one wiring layer or the second wiring layer.
One example of the present invention embodiment provides a kind of plating module of system-in-package structure comprising support frame and more
A system-in-package structure.Support frame has multiple tie points.Each system-in-package structure includes the first wiring layer, the
Two wiring layers and reproducible nonvolatile memorizer module.First wiring layer includes the first connection pad and conducting wire.First connection pad is adjacent
The first side of nearly first wiring layer, and the first connection pad is electrically connected to ground voltage.One end of conducting wire is electrically connected
The interface of system-in-package structure is electrically connected to the other end of the first connection pad, and conducting wire, wherein interface is located at the first cloth
Second side on line layer relative to first side, and interface is electrically connected to one of described tie point.Second cloth
Line layer is arranged with respect to the first wiring layer.Reproducible nonvolatile memorizer module is set to the first wiring layer or the second wiring layer
On.
In one example of the present invention embodiment, support frame as described above is to provide external voltage to system-level envelope via interface
Assembling structure.
Based on above-mentioned, by the interface of system-in-package structure and for be electrically connected to ground voltage connection pad between
One conducting wire is set, it can be quiet by being imported via opening in the use process of system-in-package structure or memory storage apparatus
The miscellaneous signal release of electricity, reduces static discharge interference.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to cooperate attached drawing to make
Carefully it is described as follows.
Detailed description of the invention
Fig. 1 is that the example of the plating module of system-in-package structure shown by an exemplary embodiment according to the present invention shows
It is intended to；
Fig. 2 and Fig. 3 is the example schematic of system-in-package structure shown by an exemplary embodiment according to the present invention；
Fig. 4 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention；
Fig. 5 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention；
Fig. 6 and Fig. 7 is that the example of system-in-package structure shown by another exemplary embodiment according to the present invention is illustrated
Figure；
Fig. 8 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention；
Fig. 9 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention.
Description of symbols:
10: the plating module of system-in-package structure；
11,41,51,61,81,91: system-in-package structure；
12: support frame；
13: tie point；
21~28: connection pad；
201: first side；
202: second side；
203,601~603: interface；
204,2041,2042,504,604,905: conducting wire；
401: capacitor cell.
Specific embodiment
Multiple exemplary embodiments set forth below illustrate the present invention, however the present invention be not limited only to illustrated by multiple examples
Embodiment.Combination appropriate is also still allowed between exemplary embodiment again.In this case specification full text (including claims)
Used " electric connection " word can refer to any direct or indirect connection means.For example, if it is described herein that the first dress
It sets (or first unit, first element) and is electrically connected at second device (or second unit, second element), then should be construed as
The first device can be directly connected to the second device or the first device can be by other devices or certain connection hand
Section and be coupled indirectly to the second device.In addition, " signal " word can refer to an at least electric current, voltage, charge, temperature, data,
Or any other one or more signal.
Fig. 1 is that the example of the plating module of system-in-package structure shown by an exemplary embodiment according to the present invention shows
It is intended to.
Please refer to Fig. 1, the plating of system in package (System in Package, abbreviation SIP) structure
(electroplating) module 10 includes multiple system-in-package structures 11 and support frame 12.In this exemplary embodiment, it is
The process conditions of each of the plating module 10 of irrespective of size encapsulating structure system-in-package structure 11 are (for example, material and/or electricity
Road layout etc.) it is all identical.In another exemplary embodiment, the system-level envelope of part in the plating module 10 of system-in-package structure
The process conditions of assembling structure 11 can not also be identical.One system-in-package structure 11 may include one or more chips.
In this exemplary embodiment, each system-in-package structure 11 is contained within that a duplicative is non-volatile to be deposited
In reservoir storage device.Alternatively, each system-in-package structure 11 is considered as a type nonvolatile
Storage device.Each system-in-package structure 11 has one or more reproducible nonvolatile memorizer modules.Alternatively, every
One system-in-package structure 11 can be electrically connected to one or more reproducible nonvolatile memorizer modules.One can make carbon copies
Formula non-volatile memory module can have multiple entity erased cell (not shown).Each entity erased cell can belong to together
One memory crystal grain (die) belongs to different memory crystal grains.Each entity erased cell is respectively provided with multiple entities
Programmed cell, and the entity program unit for belonging to the same entity erased cell can be written independently and by simultaneously
It erases.For example, an entity erased cell is made of 128 entity program units.However, it is necessary to be appreciated that, this
Invent it is without being limited thereto, each entity erased cell be can by 64 entity program units, 256 entity program units or its
He is formed any entity program unit.Since reproducible nonvolatile memorizer module is packed referred in this
(package) it in system-in-package structure 11, therefore is not indicated in the drawings.Usual skill (or the technology of this field
Personnel) it should can be illustrated according to foregoing description what is meant by reproducible nonvolatile memorizer module.For example, this duplicative is non-volatile
Property memory storage apparatus can be SD card, Micro SD card, mmc card, CF card or embedded storage device.Wherein, embedded
Storage device includes embedded multi-media card (Embedded MMC, abbreviation eMMC).It is system-level that the present invention is not intended to limit each
The size of encapsulating structure 11.In addition, a system-in-package structure 11 also may include resistance, it is capacitor, connector, antenna, micro-
The various electronic components such as processor, microcontroller and embedded controller, and these electronic components can all be mounted on phase
On same or different substrate.
In this exemplary embodiment, the plating module 10 of system-in-package structure includes 64 (4 × 16) system in package
Structure 11.Each system-in-package structure 11 is electrically connected to support frame 12 by 5 tie points (for example, tie point 13).
Whereby, by applying external voltage to support frame 12, it is system-level to each external voltage can be provided by these tie points
Encapsulating structure 11, each system-in-package structure 11 to be electroplated.However, in another exemplary embodiment, it is system-level
The plating module 10 of encapsulating structure may include more or fewer system-in-package structures 11 and/or each system-level envelope
The number of tie point for being used to be electrically connected between assembling structure 11 and support frame 12 is also possible to more or less, and the present invention is not added
With limitation.After completing plating, each system-in-package structure 11 can be by the plating module 10 from system-in-package structure
On cut down.
Fig. 2 and Fig. 3 is the example schematic of system-in-package structure shown by an exemplary embodiment according to the present invention.
Referring to Fig. 2 and Fig. 3, a system-in-package structure 11 includes multiple layers (also referred to as wiring layer).For example,
In this exemplary embodiment, there are two wiring layers for a tool of system-in-package structure 11, and may be used also between this two wiring layers
To have an adhesive layer (not shown).However, the number of wiring layer can be more or less in another exemplary embodiment, this
It invents without restriction.
System-in-package structure 11 includes at least a connection pad 21 (also referred to as the first connection pad).Connection pad 21 is arranged on system-level
On a wiring layer (also referred to as the first wiring layer) for encapsulating structure 11.And another wiring layer of system-in-package structure 11
(also referred to as the second wiring layer) is then arranged relative to the first wiring layer.For example, as shown in figure 3, first where connection pad 21 is routed
Layer is arranged on above the second wiring layer.The material of connection pad 21 can be any conductive metal or nonmetallic.It is system-level
Encapsulating structure 11 has side 201 (also referred to as first side) and 202 (also referred to as second side of side relative to side 201
Side).The setting of connection pad 21 is positioned adjacent to side 201, and is relatively distant from side 202.In addition, in system-in-package structure 11 can
Manifolding formula non-volatile memory module may be disposed on the first wiring layer or the second wiring layer, and the present invention is without restriction.
System-in-package structure 11 can be electrically connected to a host system communicated with host system (for example, transmission
Data).When system-in-package structure 11 is electrically connected to a host system, the part where side 201 can be inserted into so far
In one slot of host system, and only expose the part where side 202.When being partially inserted into host where side 201
After the slot of system, connection pad 21 can and an electrode in this slot be electrically connected, be electrically connected to a ground voltage (for example,
ground voltage VSS).In addition, the part where the side 202 exposed then not may be used as person and extract from this slot
The point of application of system-in-package structure 11.
In an exemplary embodiment, system-in-package structure 11 further includes connection pad 22~28 (also referred to as the second connection pad).Such as
Shown in Fig. 2 and Fig. 3, connection pad 22~28 can be arranged side by side with connection pad 21 on the first wiring layer.Similarly, connection pad 22~28 is set
Seated position adjacent side 201, and it is relatively distant from side 202.When being partially inserted into the slot of host system where side 201
Afterwards, connection pad 22~28 can respectively in this slot a counter electrode be electrically connected, with receive an operating voltage (for example,
Voltage VDD), a clock signal (clock signal), transmission instruction or carry out data transmission etc. with host system.
The quantity of connection pad 22~28 can be it is more or less, the present invention it is without restriction.
It is worth noting that, will be cut in plating module 10 of the system-in-package structure 11 from system-in-package structure
After cutting off, there can be at least one interface at the tie point that system-in-package structure 11 was originally electrically connected with support frame 12
(also referred to as plating interface).One interface is corresponding to a tie point.By taking the tie point 13 of Fig. 1 as an example, the system of Fig. 2 and Fig. 3
At least there is the interface 203 relative to tie point 13 on class encapsulation structure 11.When system-in-package structure 11 is not yet from support frame
When cutting down on 12, support frame 12 can provide external voltage to system-in-package structure 11 via tie point 13 and interface 203.
That is, interface 203 can receive the external voltage for being used to be electroplated by tie point 13.Interface 203 is located at side 202.Work as side
Being partially inserted into the slot of host system where side 201, since side 202 can be exposed to outside slot, works as human body
Or other conductive bodies it is close or touching interface 203 (for example, be intended to from slot extract system-in-package structure 11) when, interface
203 may generate the miscellaneous signal such as electrostatic, thus the electronic component in interference system class encapsulation structure 11.For example, generating electrostatic
Electric discharge (Electro Static Discharge, abbreviation ESD) interference.For example, this miscellaneous signal is likely to result in reading data mistake
Accidentally, or in damage system-in-package structure 11 electronic component in operating.
In this exemplary embodiment, one or more conducting wire can be set on the first wiring layer of system-in-package structure 11
204.Herein using a conducting wire 204 as example.One end of conducting wire 204 is electrically connected to connection pad 21.The other end electricity of conducting wire 204
Property is connected to interface 203.When interface 203 generates the miscellaneous signals such as electrostatic, this miscellaneous signal can be conducted to by conducting wire 204 and be connect
Pad 21, and it is released into host system.Whereby, miscellaneous signal can be reduced to the electronics member in system-in-package structure 11 in running
The influence of part.
In an exemplary embodiment, conducting wire 204 can be replaced a plurality of conducting wire of mutually concatenation (serial connected).
Fig. 4 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention.
Referring to figure 4., system-in-package structure 41 and system-in-package structure 11 the difference is that, system-in-package structure
41 include conducting wire 2041, conducting wire 2042 and capacitor cell 401.Conducting wire 2041 is also referred to as the first conducting wire, and conducting wire 2042 is also referred to as
For the second conducting wire.One end of conducting wire 2041 is electrically connected to interface 203, and the other end of conducting wire 2041 is electrically connected to capacitor
One end (also referred to as input terminal) of unit 401.The other end (also referred to as output end) of capacitor cell 401 is electrically connected to conducting wire
2042 one end, and the other end of conducting wire 2042 is electrically connected to connection pad 21.In this exemplary embodiment, capacitor cell 401
Including one or more capacitors.In another exemplary embodiment, capacitor cell 401 can also include arbitrarily being used to buffer miscellaneous signal
Circuit element.Whereby, system-in-package structure 41 can be increased about the stability for discharging miscellaneous signal.
In an exemplary embodiment, capacitor cell 401 can also with another conducting wire and meet (parallel connected).
Fig. 5 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention.
Referring to figure 5., system-in-package structure 51 and system-in-package structure 41 the difference is that, system-in-package structure
51 further include conducting wire 504.Conducting wire 504 is also referred to as privates.One end of conducting wire 504 is electrically connected to the defeated of capacitor cell 401
Enter end, and the other end of conducting wire 504 is electrically connected to the output end of capacitor cell 401.Whereby, system can further be increased
Class encapsulation structure 51 is about the stability for discharging miscellaneous signal.
In an exemplary embodiment, multiple interfaces are likely located at the first side or first side of system-in-package structure
Two sides.Therefore these interfaces can be electrically connected on the conducting wire for discharging miscellaneous signal simultaneously by another conducting wire.
Fig. 6 and Fig. 7 is that the example of system-in-package structure shown by another exemplary embodiment according to the present invention is illustrated
Figure.
Please refer to Fig. 6 and Fig. 7, system-in-package structure 61 and system-in-package structure 11 the difference is that, system-level envelope
Assembling structure 61 includes interface 601~603.The number of interface 601~603 can be more or less, without restriction herein.One
In exemplary embodiment, interface 601 can be known as first interface, interface 602 is known as second interface, and interface 603 is known as
Third interface.Similar to system-in-package structure 11, when system-in-package structure 61 is not yet separated with corresponding support frame, often
One interface 601~603 can be electrically connected to a tie point on support frame.Whereby, support frame can by interface 601~
603 provide external voltage to system-in-package structure 61, system-in-package structure 61 to be electroplated.
Relative to system-in-package structure 11, system-in-package structure 61 further includes conducting wire 604.Conducting wire 604 is also referred to as gone here and there
Even conducting wire.Conducting wire 604 is electrically connected to interface 601~603 simultaneously.In addition, conducting wire 604 is also electrically connected to the one of conducting wire 204
End.The other end of conducting wire 204 is electrically connected to connection pad 21.Whereby, when being partially inserted into host system where side 201
After slot, if human body or other conductive bodies it is close or touching interface 601~603 at least one (for example, be intended to from insert
Slot extracts system-in-package structure 61) when, the miscellaneous signal such as electrostatic produced by any one of interface 601~603 can be via leading
Line 604,204 and connection pad 21 are discharged to host system.
Fig. 8 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention.
Fig. 8 is please referred to, the conducting wire 2041, conducting wire 2042 and capacitor cell 401 in Fig. 8 are same or similar in Fig. 4 respectively
Conducting wire 2041, conducting wire 2042 and capacitor cell 401, therefore do not repeat to repeat herein.In system-in-package structure 81, conducting wire
2041 one end is electrically connected to conducting wire 604, and the other end of conducting wire 2041 is electrically connected to the input of capacitor cell 401
End.The output end of capacitor cell 401 is electrically connected to one end of conducting wire 2042, and the other end of conducting wire 2042 is electrically connected to
Connection pad 21.Whereby, system-in-package structure 81 can be increased about the stability for discharging miscellaneous signal.
Fig. 9 is the example schematic of system-in-package structure shown by another exemplary embodiment according to the present invention.
Please refer to Fig. 9, system-in-package structure 91 and system-in-package structure 81 the difference is that, system-in-package structure
91 further include conducting wire 905.Conducting wire 905 is alternatively referred to as privates.One end of conducting wire 905 is electrically connected to capacitor cell 401
Input terminal, and the other end of conducting wire 905 is electrically connected to the output end of capacitor cell 401.Whereby, it can further increase and be
Irrespective of size encapsulating structure 91 is about the stability for discharging miscellaneous signal.
It is noted that in above-mentioned each exemplary embodiment, each conducting wire for being previously mentioned (for example, conducting wire 204,
2041,2042 and 604) be all to be arranged at the first wiring layer of corresponding system-in-package structure, and the first wiring layer is
It is the layer for connection pad (for example, connection pad 21~28) is arranged.However, can also be led what is be previously mentioned in another exemplary embodiment
The second wiring layer below the first wiring layer is arranged in part or all of line, and the present invention is without restriction.In addition, above-mentioned
In each exemplary embodiment, it is electrically connected between interface (for example, interface 203 or 601~603) and connection pad (for example, connection pad 21)
Conducting wire (for example, conducting wire 204,2041,2042 and 604) be specifically used to the miscellaneous signal of electrostatic received by realizing interface, and
It will not be as other purposes (for example, transmission instruction or data-signal).It, can be with second side furthermore in an exemplary embodiment
On interface (for example, interface 203 or 601~603) above-mentioned conducting wire 204,2041 is set to the shortest path between connection pad 21
And 2042, to promote the release efficiency of the miscellaneous signal of electrostatic.
In conclusion an exemplary embodiment according to the present invention, by the plating interface in system-in-package structure and is used
To be electrically connected between the connection pad of ground voltage, an at least conducting wire is set, it can be in system-in-package structure or memory storage dress
In the use process set, the miscellaneous signal of electrostatic imported via plating interface is discharged, static discharge interference is reduced.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (18)
1. a kind of system-in-package structure characterized by comprising
First wiring layer, comprising:
First connection pad, the first side of neighbouring first wiring layer, and first connection pad is electrically connected to ground voltage；
And
Conducting wire, one end of the conducting wire is electrically connected to first connection pad, and the other end of the conducting wire is electrically connected to the system
The interface of class encapsulation structure, wherein the interface is located at the second side on first wiring layer relative to the first side, and
The interface is to receive the external voltage for being electroplated；
Second wiring layer, opposite first wiring layer are arranged；And
Reproducible nonvolatile memorizer module is set on first wiring layer or second wiring layer.
2. system according to claim 1 class encapsulation structure, which is characterized in that the conducting wire includes one first conducting wire and second
Conducting wire, one end of first conducting wire are electrically connected to the interface, and the other end of first conducting wire is electrically connected to capacitor cell
Input terminal, the output end of the capacitor cell are electrically connected to one end of second conducting wire, and the other end electricity of second conducting wire
Property is connected to first connection pad.
3. system-in-package structure according to claim 2, which is characterized in that the conducting wire further includes privates, this
One end of three wires is electrically connected to the input terminal of the capacitor cell, and the other end of the privates is electrically connected to this
The output end of capacitor cell.
4. system according to claim 1 class encapsulation structure, which is characterized in that the interface to be connected to support frame, and
The support frame is to provide the external voltage to the system-in-package structure via the interface.
5. system according to claim 1 class encapsulation structure, which is characterized in that first wiring layer further includes at least 1
Two connection pads, at least one second connection pad adjacent to the first side of first wiring layer, and first connection pad and this at least one
Second connection pad is electrically connected to host system.
6. system according to claim 1 class encapsulation structure, which is characterized in that the interface includes that first interface connects with second
Mouthful, first wiring layer further include series winding conducting wire, the conducting wire via the series winding conducting wire simultaneously be electrically connected to the first interface with
The second interface.
7. a kind of memory storage apparatus characterized by comprising
System-in-package structure, comprising:
First wiring layer, comprising:
First connection pad, the first side of neighbouring first wiring layer, and first connection pad is electrically connected to ground connection electricity
Pressure；And
Conducting wire, one end of the conducting wire is electrically connected to first connection pad, and the other end of the conducting wire is electrically connected to the system
The interface of class encapsulation structure, wherein the interface is located at the second side on first wiring layer relative to the first side, and
The interface is to receive the external voltage for being electroplated；And
Second wiring layer, opposite first wiring layer are arranged；And
Reproducible nonvolatile memorizer module is set on first wiring layer or second wiring layer.
8. memory storage apparatus according to claim 7, which is characterized in that the conducting wire includes that the first conducting wire is led with second
Line, one end of first conducting wire are electrically connected to the interface, and the other end of first conducting wire is electrically connected to the defeated of capacitor cell
Enter end, the output end of the capacitor cell is electrically connected to one end of second conducting wire, and the other end of second conducting wire is electrical
It is connected to first connection pad.
9. memory storage apparatus according to claim 8, which is characterized in that the conducting wire further includes privates, this
One end of three wires is electrically connected to the input terminal of the capacitor cell, and the other end of the privates is electrically connected to this
The output end of capacitor cell.
10. memory storage apparatus according to claim 7, which is characterized in that the interface to be connected to support frame, and
The support frame is to provide the external voltage to the system-in-package structure via the interface.
11. memory storage apparatus according to claim 7, which is characterized in that first wiring layer further includes at least one
Second connection pad, at least one second connection pad adjacent to the first side of first wiring layer, and first connection pad and this at least
One second connection pad is electrically connected to host system.
12. memory storage apparatus according to claim 7, which is characterized in that the interface includes first interface and second
Interface, first wiring layer further include series winding conducting wire, which is electrically connected to the first interface via the series winding conducting wire simultaneously
With the second interface.
13. a kind of plating module of system-in-package structure characterized by comprising
Support frame has multiple tie points；And
Multiple system-in-package structures, wherein each of system-in-package structure includes；
First wiring layer, comprising:
First connection pad, the first side of neighbouring first wiring layer, and first connection pad is electrically connected to ground voltage；
And
Conducting wire, one end of the conducting wire is electrically connected to first connection pad, and the other end of the conducting wire is electrically connected to the system
The interface of class encapsulation structure, wherein the interface is located at the second side on first wiring layer relative to the first side, and
The interface is electrically connected to one of those tie points to receive the external voltage for being used to be electroplated；
Second wiring layer, opposite first wiring layer are arranged；And
Reproducible nonvolatile memorizer module is set on first wiring layer or second wiring layer.
14. the plating module of system-in-package structure according to claim 13, which is characterized in that the conducting wire includes first
Conducting wire and the second conducting wire, one end of first conducting wire are electrically connected to the interface, and the other end of first conducting wire is electrically connected to
The input terminal of capacitor cell, the output end of the capacitor cell are electrically connected to one end of second conducting wire, and second conducting wire
The other end be electrically connected to first connection pad.
15. the plating module of system-in-package structure according to claim 14, which is characterized in that the conducting wire further includes
Three wires, one end of the privates are electrically connected to the input terminal of the capacitor cell, and the other end of the privates
It is electrically connected to the output end of the capacitor cell.
16. the plating module of system-in-package structure according to claim 13, which is characterized in that the support frame is to pass through
The external voltage is provided to the system-in-package structure by the interface.
17. the plating module of system-in-package structure according to claim 13, which is characterized in that first wiring layer is also
Including at least one second connection pad, at least one second connection pad is adjacent to the first side of first wiring layer, and this first connects
At least one second connection pad is electrically connected to host system to pad with this.
18. the plating module of system-in-package structure according to claim 13, which is characterized in that the interface includes first
Interface and second interface, first wiring layer further include series winding conducting wire, which is electrically connected to simultaneously via the series winding conducting wire
The first interface and the second interface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316893.0A CN105279096B (en) | 2014-07-04 | 2014-07-04 | Module and memory storage apparatus is electroplated with it in system-in-package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316893.0A CN105279096B (en) | 2014-07-04 | 2014-07-04 | Module and memory storage apparatus is electroplated with it in system-in-package structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105279096A CN105279096A (en) | 2016-01-27 |
| CN105279096B true CN105279096B (en) | 2019-04-02 |
Family
ID=55148139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410316893.0A Active CN105279096B (en) | 2014-07-04 | 2014-07-04 | Module and memory storage apparatus is electroplated with it in system-in-package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105279096B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998021693A1 (en) * | 1996-11-15 | 1998-05-22 | Integrated Silicon Solution, Inc. | Electrostatic discharge protection for digital media |
| CN101162511A (en) * | 2006-10-09 | 2008-04-16 | 华泰电子股份有限公司 | Storing card having electro-static discharge protection |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3901671B2 (en) * | 2003-08-19 | 2007-04-04 | 松下電器産業株式会社 | Semiconductor integrated circuit device |
| EP1617473A1 (en) * | 2004-07-13 | 2006-01-18 | Koninklijke Philips Electronics N.V. | Electronic device comprising an ESD device |
| CN101562140B (en) * | 2008-04-16 | 2010-12-01 | 中国科学院微电子研究所 | Packaging method of improving antistatic capability of integrated circuit chip |
-
2014
- 2014-07-04 CN CN201410316893.0A patent/CN105279096B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998021693A1 (en) * | 1996-11-15 | 1998-05-22 | Integrated Silicon Solution, Inc. | Electrostatic discharge protection for digital media |
| CN101162511A (en) * | 2006-10-09 | 2008-04-16 | 华泰电子股份有限公司 | Storing card having electro-static discharge protection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105279096A (en) | 2016-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8867215B2 (en) | Memory cards and electronic machines | |
| ES2901301T3 (en) | Manufacturing method of a circuit for an integrated circuit card module and a circuit for an integrated circuit card module | |
| US20200413531A1 (en) | Spark gap electrostatic discharge (esd) protection for memory cards | |
| CN102412239A (en) | Semiconductor device and method of manufacturing same | |
| CN103164737A (en) | High-density memory smart card module and manufacture method thereof | |
| TWI511241B (en) | Semiconductor storage device | |
| CN102324637A (en) | Electrical-connector plug and socket, double-surfaced U disk, card reader and interface converter | |
| TWI538257B (en) | System in package structure, electroplating module thereof and memory storage device | |
| CN109284808A (en) | A kind of multimedia storage card and mobile electronic device | |
| CN103295987A (en) | Semiconductor memory card | |
| CN105279096B (en) | Module and memory storage apparatus is electroplated with it in system-in-package structure | |
| US11037890B2 (en) | Semiconductor assembly with package on package structure and electronic device including the same | |
| US8629547B2 (en) | Semiconductor chip package | |
| CN204516361U (en) | Embedded storage chip, EMBEDDED AVIONICS | |
| CN202134034U (en) | MICRO SD card | |
| CN209044660U (en) | A kind of multimedia storage card and mobile electronic device | |
| CN106788370A (en) | Electronic device | |
| TWM491956U (en) | System in package structure, electroplating module thereof and memory storage device | |
| CN106206335B (en) | Semiconductor packages and its manufacturing method with overhang | |
| CN217589597U (en) | Memory card | |
| CN217404885U (en) | Memory card | |
| CN102053216A (en) | Static discharge test method | |
| CN215643715U (en) | NOR MCP memory chip | |
| CN105336713A (en) | Packaging structure for battery management integrated circuit | |
| CN102024796B (en) | Integrated circuit module with display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |