TWI523204B - Ferro-electric capacitor modules, methods of manufacture and design structures - Google Patents

Description

Ferroelectric capacitor module, manufacturing method and design structure

The present invention relates to a semiconductor device and a method of fabricating the same, and more particularly to a ferroelectric capacitor module, a method of fabricating the same, and a design structure.

Ferroelectric capacitors use ferroelectric materials such as PZT, which are commonly used in digital electronic devices by ferro-electric random access memory (FRAM). FRAM is a random access memory similar to dynamic random access memory (DRAM), but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. Therefore, FRAM is an alternative non-volatile memory technology that provides the same functionality as flash memory. Where FRAM is superior to flash memory, it includes lower power consumption, faster write speed, and more write-erase cycles (more than 10 ¹⁶ times for 3.3 V devices).

FRAM also has advantages over DRAM. In particular, in the DRAM, the charge deposited on the capacitor plate leaks through the insulating layer and the control transistor, and then disappears. In order for the DRAM to store data for a long time, for example, more than one second, each unit must be periodically read and then rewritten, that is, an update program that requires continuous power supply.

In contrast, FRAM requires power only when actually reading or writing cells, so FRAM does not need to update the program. FRAM is similar to DRAM in terms of write operations, but differs in read operations. In particular, "1" or "0" is stored by charging a plate on both sides of the ferroelectric layer and passing an electric field through the ferroelectric layer to achieve writing. During a read operation, the transistor forces the cell to enter a particular state, such as "0". If the unit already holds "0", nothing happens on the output line; however, if the unit holds "1", the atom rearrangement will cause a brief current pulse on the output. The presence of this pulse means that the unit holds "1". Because this process overwrites the unit, the FRAM is read as a corrupted process and needs to be rewritten if there is a change.

However, current FRAM cells are not fully integrated with CMOS technology. Accordingly, the present technology has a need to overcome the above disadvantages and limitations.

In a first aspect of the invention, a method of fabricating the ferroelectric capacitor includes forming a barrier layer on an insulator layer of a CMOS structure. The method further includes forming a top plate and a bottom plate over the barrier layer. The method further includes forming a ferroelectric material between the top plate and the bottom plate. The method further includes coating the barrier layer, the top plate, the bottom plate, and the ferroelectric material with an encapsulating material. The method further includes forming a contact through the cladding material to the top and bottom plates. At least the contact of the top plate and one of the diffusions to the CMOS structure are electrically connected through a common wire.

In another aspect of the invention, a method of fabricating a ferroelectric random access memory. The method includes forming a CMOS structure including a gate structure, a source region and a drain region associated with the gate structure, and an insulator material on the gate structure. The method further includes depositing a plurality of layers on the insulator material, the plurality of layers comprising at least one ferroelectric material sandwiched between a top plate and a bottom plate. The method further includes coating the plurality of layers in a cladding material. The method further includes forming a joint to the top plate and the bottom plate. At least the contact of the top plate and a contact to the source of the CMOS structure are electrically connected through a common line.

In another aspect of the invention, a ferroelectric capacitor structure includes a CMOS structure including a gate structure, a source region and a drain region associated with the gate structure, and the gate structure a lower insulator material and a contact surrounded by the insulator material and in contact with the source and drain regions. The structure of the ferroelectric capacitor further includes a plurality of layers on the insulator material. The plurality of layers includes at least one ferroelectric material sandwiched between a top plate and a bottom plate. The structure of the ferroelectric capacitor further includes a cladding material covering the plurality of layers. The ferroelectric capacitor structure further includes one or more upper insulator layers formed over the lower insulator layer. The ferroelectric capacitor structure further includes a line formed in the one or more upper insulator layers in contact with the top plate and the bottom plate and the source regions and the drain regions.

In yet another aspect of the invention, a design structure embodied in a machine readable storage medium for designing, manufacturing or testing an integrated circuit. The design structure includes a CMOS structure including: an insulator material over a gate structure; a plurality of layers on the insulator material, the plurality of layers including a top plate and a bottom plate At least one ferroelectric material; a cladding material covering the plurality of layers; one or more upper insulator layers formed on the lower insulator layer; and a line formed on the one or more The insulator layer is in contact with the top plate and the bottom plate and with a contact of the diffusion region of the CMOS structure.

The present invention relates to a semiconductor device and a method of fabricating the same, and more particularly to a ferroelectric capacitor module, a method of fabricating the same, and a design structure. In particular, the present invention is directed to many integration strategies for embedding ferroelectric capacitors into CMOS processes. The apparatus and method of the present invention improve the aspect ratio of current ferroelectric capacitors (such as ferroelectric random access memory (FRAM), and many current strategies for providing different capacitors, each of which has a The contact aspect ratio to silicon is less than the advantages of other components.

1 through 12 show the structure and method of fabricating a device in accordance with aspects of the present invention. In this aspect of the design of the invention, the structure has a reduced to 矽 contact aspect ratio, and the fabrication method does not expose the tip electrode contacts to hydrogen (also applicable to all aspects of the invention).

In particular, Figures 1 through 12 show a method of fabricating an FRAM using a dual or single damascene process. Figure 1 begins with a conventional CMOS structure 10. In particular, the source (S) and drain (D) regions 14 are provided on the substrate 12 using a conventional doping process. Substrate 12 can be, for example, germanium. A conventional gate structure 16 is fabricated on substrate 12 using conventional deposition, lithography, and etching processes. Gate structure 16 spans source (S) and drain (D) regions 14 and includes gate insulators (eg, dielectric), poly gate bodies, and nitride sidewalls or oxidation An oxide sidewall. In a particular embodiment, the gate structure 16 can also include a capping layer such as, for example, a nitride or oxide cap. An insulator layer 18 is deposited over the substrate 12 and the gate structure 16. In a particular embodiment, the insulator layer 18 can be, for example, BPSG (borophosphon glass).

In FIG. 2, contacts 20 are formed in insulator layer 18. In particular, contact holes are formed in the insulator layer 18 using conventional lithography and etching processes such as reactive ion etching. The contact holes extend to the source (S) and drain (D) regions 14. Metal deposits form contacts 20 in the contact holes and are in contact with source (S) and drain (D) regions 14. In a particular embodiment, the metal is tungsten; however, other metals are contemplated in the present invention. In a specific embodiment, conventional deposition processes can be used to deposit tungsten. These processes may include lining the contact holes with a barrier layer such as TiN or TiAlN prior to tungsten deposition. After metal deposition, the structure is ground using, for example, a conventional grinding step, such as chemical mechanical polishing (CMP).

Figure 3 shows a number of deposition steps in accordance with the present invention. In particular, an insulator layer 22 is deposited over the insulator layer 18. In a specific embodiment, the insulator layer 22 is Tetraethyl orthosilicate (TEOS); however, other insulator materials are also contemplated by the present invention. The insulator layer 22 can be a blanket deposited using, for example, a conventional chemical vapor deposition (CVD) or physical vapor deposition (PVD) process, and has a thickness ranging from about 10 nm to about 1000. Nm. A layer 24 of selective Al ₂ O ₃ (AlxOy) is deposited on the insulator layer 22 using, for example, a conventional CVD or PVD process. Layer 24 can be a cover that is deposited to a depth of from about 5 nm to about 50 nm. The selective TiOx layer 26 is a cover deposited on layer 24. The TiOx layer 26 can be deposited to a depth of from about 5 nm to about 50 nm using, for example, a conventional CVD or PVD process.

Still referring to FIG. 3, a metal layer (e.g., platinum layer 28) is deposited over the selective TiOx layer 26 using, for example, a conventional metal deposition process. In a particular embodiment, the platinum layer 28 acts as a bottom electrode contact (plate) for the capacitor. Platinum layer 28 is deposited to a thickness of from about 50 nm to about 300 nm.

In a further embodiment, a PZT (lead zirconate titanate) layer 30 is deposited on the platinum layer 28 to a thickness of from about 50 nm to about 400 nm using a conventional deposition process. For example, the deposition technique of PZT is metal organic chemical vapor deposition (MOCVD); however, other deposition techniques such as sol-gel or metal organic decomposition may be used. The PZT layer 30 is ferroelectric and has a spontaneous polarization (electric dipole) that can be reversed in the presence of an electric field. In a particular embodiment, the PZT layer 30 can be doped with a high percentage of cerium, lanthanum or calcium. Of course, other ferroelectric materials are also contemplated by the present invention (which are applicable to all aspects of the invention).

The yttrium oxide (IrOx) layer 32 is a cover deposited on the PZT layer 30 having a thickness of about 50 nm to about 300 nm. In an alternative embodiment, layer 32 is covered with ruthenium or platinum to a thickness of from about 20 nm to about 50 nm. Layer 32 will be the junction (board) of the top electrode of the capacitor.

In Figure 4, layer 32 is patterned using conventional lithography and etching processes, such as photoresist deposition on layer 32, and exposure to form openings. After the opening is formed, a reactive ion etching process is performed to pattern layer 32 to form patterns 32a and 32b. The photoresist is then stripped using, for example, an organic clean and rinse process. The hatched pattern 32b (on the right side of the drawing) is a portion of the top plate (layer 32), and the hatched pattern 32b is located rearward of the pattern 32a in a direction perpendicular to the plane of the structure shown in FIG.

FIG. 5 shows a patterning process for the PZT layer 30. In particular, in FIG. 5, the PZT layer 30 is patterned to form a pattern 30a. In a particular embodiment, pattern 30a is sandwiched between the top and bottom plates of the capacitor and acts as an insulator for the capacitor. In one example, pattern 30a is formed by depositing a photoresist (e.g., a PZR mask) over layer 30 and patterns 32a and 32b. The photoresist will protect the patterns 32a and 32b during the subsequent etching process (hereinafter sometimes referred to as the top plate for convenience of explanation). The photoresist is exposed to form an opening, and thereafter a reactive ion etching (RIE) process is performed to pattern layer 30 to form pattern 30a. The photoresist is then stripped using, for example, an organic cleaning and rinsing process.

In Figure 6, a selective layer 34 is deposited over patterns 32a, 32b and 30a and layer 28 using conventional deposition processes. In a particular embodiment, layer 34 is a selective AlOx that coats patterns 32a, 32b, and 30a. As such, the coated patterns 32a, 32b, and 30a can be protected from hydrogen toxicity during subsequent processing steps. Layer 34 can be deposited to a thickness of approximately 50 nm.

In Figure 7, layers 24, 26 and 28 are etched using a conventional etching process, such as RIE. In a particular embodiment, the layers 24, 26, and 28 are selectively etched and do not significantly affect the bottom layer 22. The etching process can be performed, for example, by depositing a photoresist (mask) over the coated patterns 32a, 32b, and 30a (or the selective layer 34). The photoresist is then exposed to form an opening, after which the structure is etched to remove the unprotected portions of layers 24, 26 and 28 (and optional layer 34). Then, the structure of Fig. 7 is subjected to a conventional cleaning process.

In Figure 8, layer 36 covers the structure. In particular, layer 36 is deposited on patterns 32a, 32b and 30a (or selective layer 34) and on layer 22. Layer 36 can also be deposited on the sidewalls, as well as on any exposed surfaces of layers 24, 26 and 28. As such, layer 36 will protect or wrap the sidewalls, as well as any exposed surfaces of layers 24, 26, and 28. Layer 36 can also be, for example, AlOx deposited to a thickness of about 50 nm or less. Alternatively, the present invention contemplates the use of a photoresist mask to cover layers 32a, 32b, and 30a, and to etch layers 36 on regions other than the ferro cap region (by definition, for example, stacked layers 24, 26, Beside 28 and 30a).

In FIG. 9, an insulator layer 38 is deposited over layer 36. In a particular embodiment, insulator layer 38 can be, for example, TEOS or SiO ₂ deposited using conventional deposition methods such as CVD or PVD. After deposition, the insulator layer 38 can be subjected to a planarization process, such as chemical mechanical polishing.

In FIG. 10, an insulator layer 40 is deposited over the insulator layer 38. In a particular embodiment, insulator layer 40 can be, for example, TEOS or SiO ₂ deposited using conventional deposition methods such as CVD or PVD. After deposition, the insulator layer 40 can be subjected to a planarization process, such as chemical mechanical polishing.

Figure 11 presents a damascene process in accordance with the present invention. In a first contemplated embodiment, a dual damascene process is used to fabricate contacts (studs) 42 and lines 44, 44a (scientific skilled artisans will appreciate that line 44a can also be a junction to the capacitor top plate, Contacts and wiring are used interchangeably in this manual. In particular, in a particular embodiment, a trench can be formed in insulator layer 40 using conventional lithography and etching processes (as discussed above). A via is then formed in the insulator layer 38 using conventional lithography and etching processes (as discussed above). The perforations penetrate through layers 20 and 36 to reach junction 20. In alternative embodiments, the perforations may be formed prior to forming the trenches.

In a particular embodiment, the perforations are aligned and extend to the joint 20 and the top plates 32a, 32b (although not shown in this figure, but the perforations also extend to the bottom plate). The diameter of the perforations can be, for example, about 0.6 to 0.2 microns or less (applicable to all aspects of the invention). The perforations extending to the joint 20 are filled with metal using a conventional metal deposition process to form the joints 42. In a particular embodiment, the metal is tungsten; however, other metals or metal alloys such as copper are also contemplated by the present invention. The remaining perforations can be covered during this metal deposition process. The trenches and the remaining perforations are filled with metal to form lines 44, 44a in contact with the contacts 42 and the top plates 32a, 32b. In a particular embodiment, the lines 44, 44a are copper; however, other metals or metal alloys are contemplated in the present invention. In a specific embodiment, a seed layer and/or a liner may be deposited into the trenches and/or perforations prior to deposition of the metal. The use of a seed layer and/or liner can be applied to all aspects of the invention.

In an alternative embodiment, the joint 42 and the lines 44, 44a can be formed using a single damascene process. In this process, perforations extending to the contacts 20 are formed in the insulator layer 38 prior to deposition of the insulator layer 40. The perforations can be formed using conventional lithography and etching processes (as discussed above). The perforations are aligned and extend to the joint 20 and may have a diameter of, for example, about 0.6 to 0.2 microns or less. The perforations extending to the joint 20 are filled with tungsten (or other metal or metal alloy) using a conventional metal deposition process to form the joints 42. Other perforations extending to the top plates 32a, 32b may also be formed in a particular embodiment. The other perforations can be formed in the same manner as discussed above, and can be filled, for example, to form a line 44a (in contact with the top plates 32a, 32b). After the perforations are filled with metal, the insulator layer 40 is deposited using a conventional deposition process. The insulator layer can be etched to form a trench that extends to junction 42 and line 44a. The trenches are then filled with copper (or other metal or metal alloy) to form line 44. Line 44 is in contact with contact 42 and line 44a. The structure is then subjected to a planarization and/or grinding step using conventional methods known to those skilled in the art.

Figure 12 shows another perspective view of the structure shown in Figure 11. In this figure, the contacts 42a are in contact with the bottom plate 28 (which has been patterned during the etching of layers 24, 26 and 28). In a particular embodiment, the contacts 42a are tungsten. However, as shown in Figure 13, the contacts indicated by reference numeral 42b, for example also indicating the lines (according to the technology node), may be copper or other metals or metal alloys. As described above, the contacts 42a, 42b can also be formed simultaneously with the contacts 42.

14 through 21 show the structure and method of fabricating a device in accordance with aspects of the present invention. In this aspect of the design of the invention, the FRAM thermal cycly affects only the CMOS and does not affect the tungsten contacts.

Figure 14 begins with a conventional CMOS structure 10 with additional layers. In particular, source (S) and drain (D) regions 14 are provided on substrate 12 using conventional doping processes. Substrate 12 can be, for example, germanium. A conventional gate structure 16 is fabricated on substrate 12 using conventional deposition, lithography, and etching processes. The gate structure 16 spans the source (S) and drain (D) regions 14 and includes gate insulators (e.g., dielectric), polysilicon gates, and nitride or oxide sidewalls. In a particular embodiment, the gate structure 16 can also include a cap layer such as, for example, a nitride or oxide cap. An insulator layer 18 is deposited over the substrate 12 and the gate structure 16. In a particular embodiment, the insulator layer 18 can be, for example, BPSG (borophosphon glass).

Still referring to FIG. 14, an insulator layer 22 is deposited over the insulator layer 18. In a particular embodiment, the insulator layer 22 is TEOS. The insulator layer 22 can be a cover deposited using, for example, a conventional CVD or PVD process, and has a thickness ranging from about 10 nm to about 1000 nm. A layer 24 of selective Al ₂ O ₃ (AlxOy) is deposited on the insulator layer 22 using, for example, a conventional CVD or PVD process. Layer 24 can be a cover that is deposited to a depth of from about 5 nm to about 50 nm. The selective TiOx layer 26 is a cover deposited on layer 24. The TiOx layer 26 can be deposited to a depth of from about 5 nm to about 50 nm using, for example, a conventional CVD or PVD process.

A metal layer (e.g., platinum layer 28) is deposited on the selective TiOx layer 26 using, for example, a conventional metal deposition process. In a particular embodiment, the platinum layer 28 acts as the bottom plate of the capacitor. Platinum layer 28 is deposited to a thickness of from about 50 nm to about 300 nm. In a further embodiment, PZT layer 30 (or other ferroelectric material) is deposited on platinum layer 28 to a thickness of from about 50 nm to about 400 nm using a conventional deposition process. In a particular embodiment, the PZT layer 30 can be doped with a high percentage of cerium, lanthanum or calcium. The yttrium oxide (IrOx) layer 32 is a cover deposited on the PZT layer 30 having a thickness of about 50 nm to about 300 nm. In an alternative embodiment, layer 32 is covered with ruthenium or platinum to a thickness of from about 20 nm to about 500 nm, especially from about 100 nm to about 200 nm, especially about 150 nm. Layer 32 will be the top plate of the capacitor.

In Figure 15, layer 32 is patterned using conventional lithography and etching processes, such as photoresist deposition on layer 32, and exposure to form openings. After the opening is formed, a reactive ion etching process is performed to pattern layer 32 to form patterns 32a and 32b. The photoresist is then stripped using, for example, an organic cleaning and rinsing process. The hatched pattern 32b (on the right side of the drawing) is a portion of the top plate (layer 32), and the hatched pattern 32b is located rearward of the pattern 32a in a direction perpendicular to the plane of the structure shown in FIG.

Figure 16 shows other patterning processes. In FIG. 16, the PZT layer 30 is patterned to form a pattern 30a. In a particular embodiment, pattern 30a is sandwiched between the top and bottom plates of the capacitor. In one example, pattern 30a is formed by depositing a photoresist (e.g., a PZT reticle) over layer 30 and patterns 32a and 32b. The photoresist will protect the patterns 32a and 32b (top plate) during subsequent etching processes. The photoresist is exposed to form an opening, after which a reactive ion etching (RIE) process is performed to pattern layer 30 to form pattern 30a. The photoresist is then stripped using, for example, an organic cleaning and rinsing process.

Selective layer 34 is deposited on patterns 32a, 32b and 30a and layer 28 using conventional deposition processes. In a particular embodiment, layer 34 is a selective AlOx that coats patterns 32a, 32b, and 30a. As such, the coated patterns 32a, 32b, and 30a can be protected from hydrogen toxicity during subsequent processing steps. Layer 28 can be deposited to a thickness of approximately 50 nm.

In Figure 17, layers 24, 26 and 28 are etched using a conventional etching process, such as RIE. In a particular embodiment, the layers 24, 26, and 28 are selectively etched and do not significantly affect the bottom layer 22. The etching process can be performed, for example, by depositing a photoresist (mask) over the coated patterns 32a, 32b, and 30a (or the selective layer 34 as shown in FIG. 16). The photoresist is then exposed to form an opening. The structure is then etched to remove the unprotected portions of layers 24, 26 and 28 (or selective layer 34 as shown in Figure 16). Then, the structure of Fig. 17 is subjected to a conventional cleaning process.

Then in Figure 17, layer 36 covers the structure. In particular, layer 36 is deposited on coated patterns 32a, 32b, and 30a (or selective layer 34 as shown in FIG. 16) and on layer 22. Layer 36 can also be deposited on the sidewalls, as well as on any exposed surfaces of layers 24, 26 and 28. As such, layer 36 will protect or wrap the sidewalls, as well as any exposed surfaces of layers 24, 26, and 28. Layer 36 can also be, for example, AlOx deposited to a thickness of about 50 nm or less.

In FIG. 18, an insulator layer 38 is deposited over layer 36. In a particular embodiment, insulator layer 38 can be, for example, TEOS or SiO ₂ deposited using conventional deposition methods such as CVD or PVD. After deposition, the insulator layer 38 can be planarized, such as by chemical mechanical polishing. Contact holes 20a are formed in insulator layer 18 and insulator layer 38 (and through any other layers, such as layers 22 and 36). The contact holes can be formed using conventional lithography and etching processes (e.g., reactive ion etching) extending to the source (S) and drain (D) regions 14.

As shown in FIG. 19, metal is deposited in the contact holes 20a to form contacts 20 (in contact with the source and drain regions). In a particular embodiment, the metal is tungsten; however, other metals or metal alloys are contemplated in the present invention. In a particular embodiment, the metal deposition process can include lining the contact holes with a barrier layer such as TiN or TiAlN prior to depositing the metal (eg, tungsten). After metal deposition, the structure is ground using, for example, a conventional grinding step, such as chemical mechanical polishing (CMP).

In FIG. 20, an insulator layer 40 is deposited over the insulator layer 38. In a particular embodiment, insulator layer 40 can be, for example, TEOS or SiO ₂ deposited using conventional deposition methods such as CVD or PVD. After deposition, the insulator layer 40 can be subjected to a planarization process, such as chemical mechanical polishing.

Lines 44, 44a are then fabricated using a dual damascene process. In particular, in a particular embodiment, trenches are formed in insulator layer 40 using conventional lithography and etching processes (as discussed above). Perforations are then formed in the insulator layer 38 using conventional lithography and etching processes (as discussed above). In alternative embodiments, the perforations may be formed prior to forming the trenches. In a particular embodiment, the ditches are aligned and extend to the joint 20, and the perforations are aligned and extend to the top plates 32a, 32b (although not shown in this figure, the perforations also extend to the bottom plate) . The diameter of the perforations can be, for example, about 0.6 to 0.2 microns or less. The trenches and perforations are filled with copper (or other metal or metal alloy) to form lines 44, 44a in contact with the contacts 20 and the top plates 32a, 32b.

In an alternative embodiment, the damascene process can be used to form lines 44, 44a. In this process, perforations extending into the top plates 32a, 32b are formed in the insulator layer 38 prior to deposition of the insulator layer 40. These perforations can be formed using conventional lithography and etching processes (as discussed above) before, during or after the formation of contact holes 20a. The perforations extending to the top plates 32a, 32b may be filled with copper, for example, to form a line 44a (in contact with the top plates 32a, 32b). After filling the perforations, the insulator layer 40 is deposited and etched to form trenches. The trenches are then filled with copper (or other metal or metal alloy) to form a line 44 that contacts contact 20 and line 44a.

Figure 21 shows another perspective view of the structure shown in Figure 20. In Fig. 20, the contact 42a is formed in contact with the bottom plate 28. In a particular embodiment, the contact 42a is tungsten or copper. As described above, the contact 42a can also be formed simultaneously with the contact 42.

Figures 22 and 23 show the structure and method of fabricating the structure (apparatus) in accordance with aspects of the present invention. In this aspect of the design of the invention, the structure has a reduced to 矽 contact aspect ratio, and the fabrication method does not expose the tip electrode contacts to hydrogen (also applicable to all aspects of the invention). In the particular embodiment of Figures 22 and 23, the lines 44, 44a are copper and the contacts 20 are tungsten. In an alternative embodiment, the metal line 44 is a different material than the metal contacts 20. Figure 23 shows the copper contacts 42a in contact with the bottom plate 28. In a particular embodiment, the contacts 42a and the wires 44 are fabricated using the same material. The structures of Figures 22 and 23 can be fabricated using the steps discussed above.

24 through 27 show the structure and method of fabricating a device in accordance with aspects of the present invention. Figure 24 begins with a conventional CMOS with additional layers. In particular, the structure of FIG. 24 includes layers 22, 24, 26, 28, and 32 discussed with reference to FIG. Furthermore, the structure of Figure 24 includes a layer 35. Layer 35 can be, for example, a TiN or TiAlN layer deposited on layer 32.

Figure 25 presents a number of lithography and etching steps in accordance with the present invention. In particular, as discussed in detail above, layer 32 is etched to form patterns 32a, 32b. Similarly, layer 35 is etched to form patterns 35a and 35b. In a particular embodiment, conventional lithography and etching processes are used while forming patterns 30a, 30b, 35a, 35b (substantially forming the same basic pattern). Layer 30 is also patterned using conventional lithography and etching processes to form pattern 30a. In addition, layers 24, 26, and 28 are patterned using conventional lithography and etching steps, as discussed above. In a particular embodiment, the structure of Figure 25 does not include a selective cladding layer 34, i.e., no layer 34 is deposited on the structure after patterning.

As shown in Figure 26, the cladding 36 is a cover deposited on the structure of Figure 25. In particular, a cladding layer 36 is deposited on the sidewalls and exposed surfaces of layers 22, 24, 26, 28, 30a, 30b, 32a, 35a, 35b. In a specific embodiment, the cladding layer 36 is Al ₂ O ₃ (AlxOy). Thereafter, an insulator layer 38 is deposited over the cladding layer 36. The insulator layer 38 can be, for example, TEOS or SiO ₂ . Contact holes are formed over the patterns 32a, 32b, 35a, 35b in the insulator layer 38. A metal such as tungsten is deposited in the contact holes to form a line 44a. Contact holes are also formed in the insulator layer 38 and in the layers 36 and 22 above the source and drain regions 14. Metals such as tungsten are deposited in the contact holes to form contacts 20. In a particular embodiment, the contact holes and deposited metal can be fabricated using, for example, a single damascene process to form contacts 20 and lines 44a.

Figure 27 shows the formation of line 44. As discussed above, the line can be formed by depositing an insulator layer 40 over the insulator layer 38. A trench may be formed in the insulator layer that is aligned with line 44a and contact 20. Metal can be deposited in the trench to form a line 44. In a particular embodiment, the line is copper; however, other metals or metal alloys are contemplated in the present invention. It should be understood by those skilled in the art that any combination of copper and/or tungsten can be used for lines 44, 44a and contacts 20, 42 using the integration rules discussed in this specification.

Design structure

28 shows a block diagram of an exemplary design flow 900 illustrating various design configurations including an input design structure 920 that is preferably processed by a design process 910. Design structure 920 may be a logical simulation design structure generated and processed by design process 910 to produce a logically equivalent functional representation of the hardware device. Design structure 920 may also or additionally include data and/or program instructions that, when processed by design process 910, generate a functional representation of the physical structure of the hardware device. Regardless of the functional design and/or structural design features, the design structure 920 can be generated using an electronic computer-aided design (ECAD) implemented by a core developer/designer. After the design structure 920 is encoded on a machine-readable data transmission, a gate array, or a storage medium, the design structure 920 can be designed to process one or more of the hardware and / or software module access and processing, to simulate or functionally represent electronic components, circuits, electronic or logic modules, devices, devices or systems, as shown in Figures 1 through 27. As such, design structure 920 can include a file or other data structure including human and/or machine readable source code, compiled structure, and computer executable code structure, by design or analog data processing system Functionality or representation of circuits or other hardware logic is designed at the time of processing. Such data structures may include hardware-description language (HDL) design entities or conform to and/or compatible with low-level HDL design languages such as Verilog and VHDL, and/or C or C++ Other data structures for higher-order design languages.

Design process 910 preferably utilizes and incorporates hardware and/or software modules for synthesizing, translating, or processing design/analog functional equivalents of the components, circuits, devices, or logic structures illustrated in Figures 1 through 27, A netlist 980 containing a design structure such as design structure 920 is generated. Netlist 980 may include, for example, a compiled or processed data structure representing a distribution list, decentralized components, logic gates, control circuitry, I/O devices, models, etc., which illustrate the connection of other components to circuitry in an integrated circuit design. The netlist 980 can be synthesized using an iterative process in which the netlist 980 is resynthesized one or more times depending on the design specifications and design attributes of the device. As with other design architecture types described herein, netlist 980 can be recorded on a machine readable data storage medium or programmed into a programmable gate array. The medium can be a non-volatile storage medium such as a magnetic or optical disc player, a programmable gate array, a compact flash or other flash memory. Additionally or alternatively, the medium can be a system or cache memory, buffer space, or electrical or optically conductive device and material on which the data packets can be transmitted and intermediated via the Internet or other network connection.

Design process 910 can include hardware and software modules that process a number of input data structure types, including netlist 980. Such data structure types may be located, for example, within a library element 930 and include a set of commonly used elements, circuits, and devices including models, layouts, and symbolic representations for known manufacturing techniques (eg, Different technology nodes, 32 nm, 45 nm, 90 nm, etc.). The data structure type may further include design specifications 940, feature data 950, validation data 960, design rules 970, and test data files 985, which may include input test patterns, output test results, and other test information. The design process 910 can further include, for example, standard mechanical design processes such as stress analysis, thermal analysis, mechanical event simulation, operational process simulations, such as casting, molding, and compression molding ( Die press forming). Those skilled in the art of designing a design can understand the range of possible mechanical design tools and applications used in the process 910 without departing from the scope and spirit of the invention. Design process 910 may also include modules for performing standard circuit design processing, such as time analysis, validation, design rule checking, location and routing operations, and the like.

The design process 910 utilizes and incorporates logical and physical design tools such as HDL compilers and simulation model building tools to match the design structure 920 with some or all of the described supporting data structures with any additional mechanical design or material (if applicable). Processing together to produce a second design structure 990. The design structure 990 is in a data format for the exchange of information between the mechanical device and the structure (eg, in IGES, DXF, Parasolid XT, JT, DRG, or any other format suitable for storing or presenting such mechanical design structures) The stored information) is located in the storage medium or in the programmable gate array. Design structure 990 is similar to design structure 920 and preferably includes one or more files, data structures, or other computer-encoded data or instructions located within the transport or data storage medium that, after being processed by the ECAD system, produce Figures 1 through 27 One or more logical or functional equivalents of the specific embodiments of the invention are shown. In one embodiment, design structure 990 can include a compiled, executable HDL simulation model that functionally simulates the apparatus shown in Figures 1-27.

Design Structure 990 may also utilize data formats and/or symbolic data formats for integrated circuit routing data exchange (eg, GDSII (GDS2), GL1, OASIS, map file, or other suitable storage for this design) Information stored in any format of the data structure). Design structure 990 may include information such as symbol data, map files, test data files, design content files, manufacturing materials, wiring design properties, wiring, metal levels, perforations, shapes, routing information through manufacturing lines, and The manufacturer or other designer/developer produces any of the other materials required for the apparatus or structure described above and illustrated in Figures 1-27. Design structure 990 then proceeds to stage 995 where, for example, design structure 990: tape-out, fabrication begins, delivery to the reticle chamber, delivery to other design rooms, return to customer, and the like.

The methods as described above are used in the fabrication of integrated circuit wafers. As a result, the integrated circuit wafer can be spread by the manufacturer in a raw wafer form (that is, a single wafer having a plurality of unpackaged wafers), as a bare die or packaged form. In the latter case, the wafer is placed in a single-chip package (such as a plastic carrier with leads fixed to the motherboard or other higher-level carrier) or placed in a multi-chip package (like A ceramic carrier having either or both of a surface interconnection or a buried interconnection. In any case, the wafer is integrated with other wafers, discrete circuit components, and/or other signal processing devices into either (a) an intermediate product (such as a motherboard), or (b) a portion of any of the final products. The final product can be any product that includes integrated circuit chips.

The terminology used herein is for the purpose of illustration and description, and the As used herein, the singular forms "a", "the", "the" It will be further understood that the term "comprises" (or "comprises" or "comprising" as used in the specification indicates the existence of the stated features, integers, steps, operations, components and/or components, but does not exclude one or more other features. The existence or addition of the whole, steps, operations, components, components, and/or groups thereof.

In the context of the claims, the corresponding structures, materials, acts, and equivalents of all components or steps of the elements are intended to include any structure, material, or behavior, as described in the scope of the claims. The functionality of other patented components is combined. The description of the present invention has been presented for purposes of illustration and description. Numerous modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention. The present invention has been chosen and described in terms of the preferred embodiments and embodiments of the invention

10. . . Traditional CMOS structure

12. . . Substrate

14. . . Source (S) and drain (D) areas

16. . . Traditional gate structure

18. . . Insulator layer

20. . . contact

20a. . . Contact hole

twenty two. . . Insulator layer

twenty four. . . Floor

26. . . TiOx layer

28. . . Platinum layer

30. . . PZT layer

30a. . . pattern

30b. . . pattern

32. . . Cerium oxide layer

32a. . . Pattern (top plate)

32b. . . Pattern (top plate)

34. . . Floor

35. . . Floor

35a. . . pattern

35b. . . pattern

36. . . Coating

38. . . Insulator layer

40. . . Insulator layer

42. . . contact

42a. . . contact

42b. . . contact

44. . . line

44a. . . line

910. . . Design processing

920. . . Input design structure; design structure

930. . . Library component

940. . . Design specification

950. . . Characteristic data

960. . . Confirmation information

970. . . Design rule

980. . . Network table

985. . . Test data file

990. . . Design structure

995. . . stage

The invention will be described in the foregoing detailed description, with reference to the appended claims

1 through 12 illustrate a structure in accordance with aspects of the present invention and a method of fabricating a device;

Figure 13 shows an alternative structure and method of making a device in accordance with aspects of the present invention;

14 through 21 illustrate an alternative structure and method of fabricating a device in accordance with aspects of the present invention;

22 and 23 show an alternative structure and method of fabricating a device in accordance with aspects of the present invention;

24 through 27 illustrate an alternative structure and method of fabricating a device in accordance with aspects of the present invention;

Figure 28 shows a flow chart of the design process used in semiconductor design, fabrication, and/or testing.

20. . . contact

twenty two. . . Insulator layer

32a. . . Pattern (top plate)

32b. . . Pattern (top plate)

36. . . Coating

38. . . Insulator layer

40. . . Insulator layer

42. . . contact

44. . . line

44a. . . line

Claims (13)

A method of manufacturing a ferroelectric capacitor includes: forming a barrier layer on an insulator layer of a CMOS structure; forming a top plate and a bottom plate over the barrier layer; forming a gap between the top plate and the bottom plate a ferroelectric material; forming a first cladding layer on the top plate, the bottom plate and the ferroelectric material; etching a portion of the first cladding layer and a portion of the bottom plate; forming a second cladding layer on the first a barrier layer and the exposed surface of the barrier layer and the substrate, the exposed surfaces of the barrier layer and the substrate are exposed while etching the first cladding layer; and formed through the a first cladding layer and the second cladding layer to at least a first contact of the top plate and at least a second contact through the second cladding layer to the bottom plate, wherein at least to the top plate The first contact and a third contact to the CMOS structure are electrically connected through a common line; and the first contact to the top plate is a first metal, and the third connection to the CMOS structure The point is a second metal that is different from the first metal. The method of claim 1, wherein the first cladding layer is AlxOy. A method of manufacturing a ferroelectric capacitor includes: forming a barrier layer on an insulator layer of a CMOS structure; forming a top plate and a bottom plate over the barrier layer; forming a gap between the top plate and the bottom plate a ferroelectric material; coating the barrier layer, the top plate, the bottom plate, and the ferroelectric material with a cladding material; and forming a first contact through the cladding material to the top plate and passing through the package a second contact of the material to the bottom plate, wherein at least the first contact of the top plate and a third contact to a diffusion region of the CMOS structure are electrically connected through a common line; The material is AlxOy; the cladding material is two layers; a first cladding layer of the two layers is deposited on the top plate, the bottom plate and the exposed surface of the ferroelectric material; above the portion of the ferroelectric material Etching the two first layers of the first cladding layer, and depositing a second cladding layer of the two layers on the first cladding layer and any of the bottom plate, the ferroelectric material and the underlying insulator layer The exposed surface of the bottom plate, the ferroelectric material and the underlying insulator layer are exposed when the first cladding layer is etched; etching the first cladding layer is a portion of the ferroelectric material Etching to expose a sidewall of the barrier layer and a sidewall of the substrate, and the second cladding layer is deposited on the sidewall of the exposed barrier layer and the sidewall of the substrate. The method of claim 3, further comprising: forming a first insulator layer on the second cladding layer; forming a second insulator layer on the first insulator layer; and performing a damascene process to form The first contact to the top plate and the second contact to the bottom plate. The method of claim 4, wherein the damascene process is a dual damascene process, comprising: etching a through hole in the first insulator layer, and depositing a metal therein to form the first contact and the first Two junctions; Etching a trench in the second insulator layer deposited over the first insulator layer, the trench filling a metal to form a line in contact with the top plate and the bottom plate; or wherein the damascene process is a single damascene process, which forms A fourth junction to the source region of the CMOS structure and a fifth junction of the drain region. The method of claim 1, further comprising patterning the top plate and the ferroelectric material, wherein the first cladding layer is formed after the top plate and the ferroelectric material are patterned. The method of claim 1, wherein the second contact is tungsten deposited in a single perforation formed in an insulator material. The method of claim 1, wherein: the third contact is deposited in two separately formed perforations; the second metal is tungsten; and a first one of the individually formed perforations is etched in the lower insulator layer Extending to a source and a drain contact of a transistor; and etching a second one of the individually formed vias in an upper insulator layer deposited on the lower insulator layer, extending to the The first one of the individually formed perforations. A method of manufacturing a ferroelectric capacitor includes: forming a barrier layer on an insulator layer of a CMOS structure; forming a top plate and a bottom plate over the barrier layer; forming a gap between the top plate and the bottom plate a ferroelectric material; coating the barrier layer, the top plate, the bottom plate, and the ferroelectric material with a cladding material; Forming a first contact through the cladding material to the top plate and a second contact through the cladding material to the bottom plate, wherein at least to the first contact of the top plate and to the CMOS structure A third contact of a diffusion region is electrically connected through a common line; to the diffusion region of the CMOS structure, the third contact is tungsten, which is deposited in two separately formed via holes; in the lower insulator layer Etching a first one of the individually formed vias to a source and drain contact of a transistor; etching the individually formed vias in an upper insulator layer deposited on the lower insulator layer a second one extending to the first one of the individually formed perforations; and wherein the first contact and the second contact are a first metal and extending to the top plate and the bottom plate The line in contact between the first contact and the second contact is a second metal that is different from the first metal. A method of fabricating a ferroelectric random access memory, comprising: forming a CMOS structure, the structure comprising a gate structure, a source region and a drain region associated with the gate structure, and the gate structure An insulator material; depositing a plurality of layers on the insulator material, the plurality of layers comprising at least one ferroelectric material sandwiched between a top plate and a bottom plate; the plurality of layers being coated in a cladding a first contact formed to the top plate and a second contact to the bottom plate, wherein at least to the first contact of the top plate and a third portion to the source region of the CMOS structure The contact is electrically connected through a common line; the first contact to the top plate is a first metal, and the third contact to the source region is a second metal, which is different from the first metal; The plurality of layers further includes a barrier layer formed on the top plate; The cladding material is a single cladding material. A method of fabricating a ferroelectric random access memory, comprising: forming a CMOS structure, the structure comprising a gate structure, a source region and a drain region associated with the gate structure, and the gate structure An insulator material; depositing a plurality of layers on the insulator material, the plurality of layers comprising at least one ferroelectric material sandwiched between a top plate and a bottom plate; the plurality of layers being coated in a cladding a first contact formed to the top plate and a second contact to the bottom plate, wherein at least to the first contact of the top plate and a third portion to the source region of the CMOS structure The contact is electrically connected through a common line; the first contact to the top plate is a first metal, and the third contact to the source region is a second metal, which is different from the first metal; The plurality of layers further includes a first barrier layer formed under the substrate and a second barrier layer formed on a top end of the top plate. The method of claim 11, further comprising: patterning the top plate and the second barrier layer in a single etching step; patterning the substrate with the ferroelectric material in a single etching step; The cladding material is deposited over the patterned second barrier layer, the top plate, the ferroelectric material, and any exposed portions of the substrate in a single deposition step. The method of claim 10, further comprising: patterning the plurality of layers; and depositing the cladding material on the plurality of patterned layers.