TWI519384B - 溝槽式化學機械拋光（ｃｍｐ）之拋光墊 - Google Patents

溝槽式化學機械拋光（ｃｍｐ）之拋光墊 Download PDF

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Publication number
TWI519384B
TWI519384B TW099123549A TW99123549A TWI519384B TW I519384 B TWI519384 B TW I519384B TW 099123549 A TW099123549 A TW 099123549A TW 99123549 A TW99123549 A TW 99123549A TW I519384 B TWI519384 B TW I519384B
Authority
TW
Taiwan
Prior art keywords
polishing
polishing pad
pad
mils
grooves
Prior art date
Application number
TW099123549A
Other languages
English (en)
Chinese (zh)
Other versions
TW201121711A (en
Inventor
蔡慶銘
福瑞德 森
劉聖煥
徐嘉成
安南斯 納門
邱浩光
丹尼許 康納
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201121711A publication Critical patent/TW201121711A/zh
Application granted granted Critical
Publication of TWI519384B publication Critical patent/TWI519384B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
TW099123549A 2009-07-16 2010-07-16 溝槽式化學機械拋光（ｃｍｐ）之拋光墊 TWI519384B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27106809P 2009-07-16 2009-07-16

Publications (2)

Publication Number Publication Date
TW201121711A TW201121711A (en) 2011-07-01
TWI519384B true TWI519384B (zh) 2016-02-01

Family

ID=43450188

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099123549A TWI519384B (zh) 2009-07-16 2010-07-16 溝槽式化學機械拋光（ｃｍｐ）之拋光墊

Country Status (7)

Country Link
US (1) US20110014858A1 (fr)
JP (1) JP2012533888A (fr)
KR (1) KR101478414B1 (fr)
CN (1) CN102498549A (fr)
SG (2) SG177625A1 (fr)
TW (1) TWI519384B (fr)
WO (1) WO2011008918A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI757410B (zh) * 2017-01-20 2022-03-11 美商應用材料股份有限公司 用於cmp應用的薄的塑膠拋光用具

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009018434B4 (de) * 2009-04-22 2023-11-30 Ev Group Gmbh Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
JP2014124718A (ja) * 2012-12-26 2014-07-07 Toyo Tire & Rubber Co Ltd 積層研磨パッドの製造方法
TWI599447B (zh) * 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
CN113579992A (zh) 2014-10-17 2021-11-02 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
WO2017074773A1 (fr) 2015-10-30 2017-05-04 Applied Materials, Inc. Appareil et procédé de formation d'article de polissage ayant un potentiel zêta souhaité
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10875146B2 (en) * 2016-03-24 2020-12-29 Rohm And Haas Electronic Materials Cmp Holdings Debris-removal groove for CMP polishing pad
USD816774S1 (en) * 2016-03-25 2018-05-01 Craig Franklin Edevold Spiral pattern for cribbage board
USD855110S1 (en) * 2017-01-31 2019-07-30 Gary Peterson Game board
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (fr) 2017-08-07 2019-02-14 Applied Materials, Inc. Tampons à polir à distribution abrasive et leurs procédés de fabrication
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
CN112720282B (zh) * 2020-12-31 2022-04-08 湖北鼎汇微电子材料有限公司 一种抛光垫
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113829176B (zh) * 2021-08-31 2023-04-14 北京航天控制仪器研究所 一种用于铍材镜体研磨抛光的研磨平板及研磨抛光方法
CN114274043B (zh) * 2021-12-29 2023-02-24 湖北鼎汇微电子材料有限公司 一种抛光垫

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
DE60109601T2 (de) * 2000-05-27 2006-02-09 Rohm and Haas Electronic Materials CMP Holdings, Inc., Wilmington Rillen-polierkissen zum chemisch-mechanischen planarisieren
US6736709B1 (en) * 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
JP3658591B2 (ja) * 2002-04-03 2005-06-08 東邦エンジニアリング株式会社 研磨パッドおよび該研磨パッドを用いた半導体基板の製造方法
JP3849594B2 (ja) * 2002-06-28 2006-11-22 Ｊｓｒ株式会社 研磨パッド
JP3849582B2 (ja) * 2002-06-03 2006-11-22 Ｊｓｒ株式会社 研磨パッド及び複層型研磨パッド
US20040014413A1 (en) * 2002-06-03 2004-01-22 Jsr Corporation Polishing pad and multi-layer polishing pad
JP2004071985A (ja) * 2002-08-08 2004-03-04 Jsr Corp 半導体ウェハ用研磨パッドの加工方法及び半導体ウェハ用研磨パッド
JP2004167605A (ja) * 2002-11-15 2004-06-17 Rodel Nitta Co 研磨パッドおよび研磨装置
JP3872081B2 (ja) * 2004-12-29 2007-01-24 東邦エンジニアリング株式会社 研磨用パッド
CN101024260A (zh) * 2006-02-24 2007-08-29 三芳化学工业股份有限公司 具有表面纹路的抛光垫和其制造方法与制造装置
US8192257B2 (en) * 2006-04-06 2012-06-05 Micron Technology, Inc. Method of manufacture of constant groove depth pads

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI757410B (zh) * 2017-01-20 2022-03-11 美商應用材料股份有限公司 用於cmp應用的薄的塑膠拋光用具

Also Published As

Publication number Publication date
US20110014858A1 (en) 2011-01-20
TW201121711A (en) 2011-07-01
KR20120042985A (ko) 2012-05-03
KR101478414B1 (ko) 2014-12-31
WO2011008918A3 (fr) 2011-04-28
SG177625A1 (en) 2012-02-28
WO2011008918A2 (fr) 2011-01-20
JP2012533888A (ja) 2012-12-27
CN102498549A (zh) 2012-06-13
SG10201404152UA (en) 2014-09-26

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