TWI505878B - Atomization spray device for wafer cleaning - Google Patents

Atomization spray device for wafer cleaning Download PDF

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TWI505878B
TWI505878B TW102103617A TW102103617A TWI505878B TW I505878 B TWI505878 B TW I505878B TW 102103617 A TW102103617 A TW 102103617A TW 102103617 A TW102103617 A TW 102103617A TW I505878 B TWI505878 B TW I505878B
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atomizing spray
hole
spray device
cleaning
coupling layer
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TW102103617A
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TW201402235A (en
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Xiao-Yan Liu
Yi Wu
guo-chao Chu
Hai-Xiao Liu
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Beijing Sevenstar Electronics Co Ltd
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一種清洗霧化噴射裝置Cleaning atomization spraying device

本案係關於半導體晶圓工藝技術領域,特別關於一種清洗霧化噴射裝置。The present invention relates to the field of semiconductor wafer process technology, and more particularly to a cleaning atomization spray device.

本申請案主張2012年4月26日申請之大陸申請案第201210127692.7號之優先權,該等案至全文以引用的方式併入本文中。This application claims the benefit of priority to the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit.

積體電路的製造工藝中存在數百道清洗工序,為了保證晶圓材料表面的潔淨度,清洗工序占了整個製造過程的30%。其中,該晶圓指的是純矽基板的矽片和帶有銅互連結構的矽片。據統計,每片200mm直徑的矽基板晶圓,在整個製造中需耗用5噸高純去離子水,再加上清洗中其它各種耗材的費用,將是一個十分高昂的數字。There are hundreds of cleaning processes in the manufacturing process of the integrated circuit. In order to ensure the cleanliness of the surface of the wafer material, the cleaning process accounts for 30% of the entire manufacturing process. The wafer refers to a tantalum of a pure tantalum substrate and a tantalum with a copper interconnect structure. According to statistics, each 200mm diameter 矽 substrate wafer consumes 5 tons of high-purity deionized water throughout the manufacturing process, plus the cost of other various consumables in cleaning, which will be a very high number.

而進一步的統計顯示,整個半導體元件製造中超過50%的損失量都是由表面污染、清洗不徹底造成的。如顆粒污染會使光刻膠和掩模的接觸不良,在對準與曝光過程中損傷膠膜和掩模版,引起解析度下降,造成針孔、小島等圖形缺陷。在曝光過程中,如果掩模版或光刻膠膜上粘附顆粒,在圖形轉印後,就會引起圖形的缺損或橋連,分別導致電路斷路或短路。Further statistics show that more than 50% of the loss in the manufacture of the entire semiconductor component is caused by surface contamination and incomplete cleaning. If the particle contamination causes poor contact between the photoresist and the mask, the film and the reticle are damaged during the alignment and exposure process, causing the resolution to decrease, causing pattern defects such as pinholes and small islands. During the exposure process, if particles are adhered to the reticle or the photoresist film, the pattern may be defective or bridged after the transfer of the pattern, causing the circuit to be broken or short-circuited, respectively.

目前對於銅互連晶圆的清洗設備多以旋轉噴射式為主,即晶圆固定在清洗機的旋轉卡盤上,隨卡盤高速運 動,在卡盤上方存在噴頭噴射清洗液和去離子水。噴射的清洗液以很高的流量衝擊矽片時,將產生一個物理作用力。噴射的使用和晶圓旋轉產生的離心力確保了減少化學試劑和去離子水的用量下的有效清洗。At present, the cleaning equipment for copper interconnect wafers is mainly based on rotary jet type, that is, the wafer is fixed on the rotating chuck of the washing machine, and is transported with the chuck at high speed. Moving, there is a nozzle spray cleaning liquid and deionized water above the chuck. When the jetted cleaning fluid impacts the cymbal at a high flow rate, a physical force is generated. The use of jets and the centrifugal force generated by wafer rotation ensure efficient cleaning with reduced amounts of chemical and deionized water.

但隨著積體電路的迅速發展,尤其是銅互連線的線寬進一步減小,對清洗技術的要求越來越高,導致銅互連表面的清洗工藝隨著線寬的減小其難度越來越大。而傳統的清洗噴射技術存在大尺寸液滴或是噴射流,對65納米及其以下工藝的晶圆表面的圖形的損傷越顯嚴重,同時清洗液和去離子水的利用率較低,導致資源的極度浪費。However, with the rapid development of integrated circuits, especially the line width of copper interconnects is further reduced, the requirements for cleaning technology are getting higher and higher, which makes the cleaning process of copper interconnect surfaces difficult with the reduction of line width. getting bigger. However, the conventional cleaning and spraying technology has large-sized droplets or jets, and the damage to the pattern on the wafer surface of 65 nm and below is more serious, and the utilization rate of cleaning liquid and deionized water is low, resulting in resources. Extremely wasteful.

本發明所要解決之技術問題在於提供一種結構簡單、實現噴射超微霧化液滴的清洗霧化噴射裝置,以克服單純的霧化機制產生大尺寸液滴或是噴射流,對65納米及其以下工藝的晶圆表面圖形造成嚴重損傷、清洗液和去離子水的利用率低等缺陷。The technical problem to be solved by the present invention is to provide a cleaning atomization spraying device which is simple in structure and realizes spraying ultrafine atomized droplets, so as to overcome the simple atomization mechanism to generate large-sized droplets or jets, for 65 nm and The wafer surface pattern of the following processes causes serious damage, low utilization of cleaning liquid and deionized water, and the like.

為實現上述目的,本發明提供一種清洗霧化噴射裝置,包括:一上殼體、與該上殼體連接的一下殼體;該上殼體為二階圓筒狀,包括一第一階殼體和一第二階殼體,該第一階殼體的橫截面積小於該第二階殼體的橫截面積,該第二階殼體中設有一換能器;該下殼體的兩側壁設有一第二通氣孔,該下殼體的中心位置設有一霧化噴射通孔,該第二通氣孔與該霧化噴射通孔相通且具有夾角。To achieve the above object, the present invention provides a cleaning atomizing spray device comprising: an upper casing, a lower casing connected to the upper casing; the upper casing being a second-order cylindrical shape including a first-order casing And a second-stage housing having a cross-sectional area smaller than a cross-sectional area of the second-stage housing, wherein the second-stage housing is provided with a transducer; both sidewalls of the lower housing A second venting hole is disposed, and a center of the lower casing is provided with an atomizing spray through hole, and the second vent hole communicates with the atomizing spray through hole and has an angle.

進一步,該換能器包括呈圓筒狀且其表面設有多個第一通氣孔的一換能器主體和一耦合層,該耦合層通過一耦合層支撐部件固定在該換能器主體內部。Further, the transducer includes a transducer body having a cylindrical shape and a plurality of first vent holes on a surface thereof, and a coupling layer fixed to the inside of the transducer body by a coupling layer supporting member .

更進一步,該耦合層包括一壓電晶體和一耦合片,該壓電晶體通過一導電膠與該耦合片連接。Further, the coupling layer includes a piezoelectric crystal and a coupling piece, and the piezoelectric crystal is connected to the coupling piece through a conductive paste.

更進一步,該耦合片由單一介質或多種介質製成,其厚度為1/4波長的整數倍。Furthermore, the coupling piece is made of a single medium or a plurality of mediums having a thickness of an integral multiple of 1/4 wavelength.

更進一步,該清洗霧化噴射裝置更包括一密封圈,該密封圈設置於該耦合層的下表面,用於密封該耦合層和該耦合層支撐部件。Further, the cleaning atomizing spray device further includes a sealing ring disposed on a lower surface of the coupling layer for sealing the coupling layer and the coupling layer supporting member.

更進一步,該第一階殼體的一側設有一進氣孔,該第二階殼體的一側設有一進液孔。Further, one side of the first-stage housing is provided with an air inlet hole, and one side of the second-stage housing is provided with a liquid inlet hole.

更進一步,該第二通氣孔與該霧化噴射通孔之間的夾角為20-70°。Further, an angle between the second vent hole and the atomizing spray through hole is 20-70°.

更進一步,該耦合層下表面與該下殼體霧化噴射通孔上表面之間的垂直距離為1mm-10mm。Further, a vertical distance between the lower surface of the coupling layer and the upper surface of the atomizing spray through hole of the lower casing is 1 mm to 10 mm.

更進一步,該換能器主體的側壁至該上殼體中的第二階殼體內壁距離為1mm-10mm。Further, the distance from the side wall of the transducer body to the inner wall of the second-order housing in the upper casing is 1 mm to 10 mm.

更進一步,該第一通氣孔的孔徑為1-3mm,其由上至下按圓周切面方向依次排列在該換能器主體上。Further, the first vent hole has a hole diameter of 1-3 mm, which is sequentially arranged on the transducer body in the circumferential direction from top to bottom.

承上所述,本案之清洗霧化噴射裝置,結構簡單,集成度高,可有效實現噴射超微霧化液滴,在不損傷晶圓表面圖案的前提下,對晶圓進行有效清洗,並最大程度的節約水資源。As described above, the cleaning atomizing spray device of the present invention has a simple structure and high integration, and can effectively spray the ultra-micro atomized droplets, and effectively clean the wafer without damaging the surface pattern of the wafer, and Maximum water conservation.

為讓本發明之上述和其他特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。The above and other features and advantages of the present invention will become more apparent from the description of the appended claims.

以下將配合圖式及實施例來詳細說明本發明之特徵與實施方式,內容足以使任何熟習相關技藝者能夠輕易地充分理解本發明解決技術問題所應用的技術手段並據以實施,藉此實現本發明可達成的功效,其中相同的元件將以相同的參照符號加以說明。The features and embodiments of the present invention will be described in detail below with reference to the drawings and embodiments, which are sufficient to enable those skilled in the art to fully understand the technical means to which the present invention solves the technical problems, and The achievable effects of the present invention will be explained by the same reference numerals.

參照圖1~5,本發明清洗霧化噴射裝置包括:上殼體2以及通過螺紋或其他連接方式連接在一起的下殼體10,該上殼體2由PVDF或其它抗腐蝕性高並且強度較好的非金屬材料製成。上殼體2為二階圓筒狀,包括第一階殼體21和第二階殼體22,第一階殼體21的橫截面積小於第二階殼體22的橫截面積;該第一階殼體21設有可與功率放大器(圖未示)連接的電纜接頭1,該第二階殼體22中設有換能器,換能器包括換能器主體4及耦合層8。該第一階殼體21上設有進氣口14,第二階殼體22上設有進液孔13。Referring to Figures 1 to 5, the cleaning atomizing spray device of the present invention comprises: an upper casing 2 and a lower casing 10 joined together by threading or other connection, the upper casing 2 being made of PVDF or other corrosion resistant and strong Made of a better non-metallic material. The upper casing 2 is a second-order cylindrical shape, and includes a first-stage casing 21 and a second-stage casing 22, the cross-sectional area of the first-stage casing 21 being smaller than the cross-sectional area of the second-stage casing 22; The step housing 21 is provided with a cable connector 1 connectable to a power amplifier (not shown). The second step housing 22 is provided with a transducer, and the transducer comprises a transducer body 4 and a coupling layer 8. The first step housing 21 is provided with an air inlet 14 , and the second step housing 22 is provided with a liquid inlet hole 13 .

第二階殼體22的上表面設有連接孔3,通過螺栓、連接釘等方式用來固定換能器主體4,該換能器主體4為圓筒狀,且其表面側壁上均勻設有多個第一通氣孔6,該第一通氣孔6由上至下按圓周切面方向依次排列在換能器主 體4上。該第一通氣孔6的孔徑為1mm-3mm,其形狀較優為圓形、扇形或三角形。第一通氣孔6可向兆聲系統內部換能器提供氣動霧化所需的氣體源,使通入上殼體的液體由層流轉化為連續的湍流,為兆聲系統提供冷卻功能並對霧化噴射裝置內部起到淨化乾燥的作用。該換能器主體4內部設有耦合層8,該耦合層8通過耦合層支撐部件5固定於換能器主體4內部,如圖1、圖4和圖5所示。其中,換能器主體4的側壁至上殼體2中的第二階殼體22內壁距離為1mm-10mm,該距離可以在保證噴射流量的前提下,儘量使液體變成薄膜,更有利於在兆聲振盪下分裂為更小的液滴。The upper surface of the second-stage housing 22 is provided with a connecting hole 3 for fixing the transducer body 4 by means of a bolt, a connecting nail or the like. The transducer body 4 is cylindrical and evenly disposed on the side wall of the surface. a plurality of first vent holes 6 arranged in the circumferential direction from top to bottom in the transducer main body On body 4. The first vent hole 6 has a hole diameter of 1 mm to 3 mm, and its shape is preferably circular, fan-shaped or triangular. The first venting opening 6 can provide a gas source for pneumatic atomization to the internal transducer of the megasonic system, and convert the liquid flowing into the upper casing into a continuous turbulent flow, providing cooling function for the megasonic system and The inside of the atomizing spray device functions to purify and dry. The transducer body 4 is internally provided with a coupling layer 8, which is fixed to the inside of the transducer body 4 by a coupling layer supporting member 5, as shown in Figs. 1, 4 and 5. Wherein, the distance from the side wall of the transducer body 4 to the inner wall of the second-order housing 22 in the upper casing 2 is 1 mm to 10 mm, and the distance can make the liquid become a film as much as possible under the premise of ensuring the injection flow rate, which is more advantageous in Split into smaller droplets under mega oscillations.

其中,該耦合層8包括:壓電晶體7及耦合片;該壓電晶體7常用材料為經過極化處理的鋯鈦酸鉛,其通過導電膠與耦合片緊密粘結在一起,其中耦合片由單一介質或多介質製成,其厚度為1/4波長的整數倍,並且其上表面可以通過螺釘壓線連接電纜。另外,該清洗霧化噴射裝置還包括密封圈12,該密封圈12設於耦合層8的下表面上,用於將耦合層8與耦合層支撐部件5進行密封。The coupling layer 8 includes: a piezoelectric crystal 7 and a coupling piece; the piezoelectric crystal 7 is commonly used as a polarization-treated lead zirconate titanate, which is tightly bonded to the coupling piece by a conductive adhesive, wherein the coupling piece Made of a single medium or a multi-media, the thickness is an integral multiple of 1/4 wavelength, and the upper surface thereof can be connected by a screw crimping cable. In addition, the cleaning atomizing spray device further includes a sealing ring 12 provided on the lower surface of the coupling layer 8 for sealing the coupling layer 8 and the coupling layer supporting member 5.

下殼體10的兩相對側壁設有第二通氣孔9,與該相對側壁垂直的面上設有螺絲孔15,藉由螺絲孔15可將清洗霧化噴射裝置固定於某一部件上,例如固定於分配臂(dispense arm)上。該下殼體10的中心位置設有霧化噴射通孔11,如圖1和圖3所示,位於側壁的第二通氣孔9和中心位置的霧化噴射通孔11相通並存在一定夾角,該夾 角為20度至70度。該第二通氣孔9與霧化噴射通孔11之間的角度為噴射的氣體提供兩方面的作用,一方面加快霧化液體從噴嘴噴射的速度,另一方面,加速霧化的效果,使霧化的液滴更小。The two opposite sidewalls of the lower casing 10 are provided with a second venting hole 9, and a surface perpendicular to the opposite sidewall is provided with a screw hole 15 through which the cleaning atomizing spray device can be fixed to a certain component, for example Fixed to the dispensing arm. The center of the lower casing 10 is provided with an atomizing spray through hole 11 . As shown in FIGS. 1 and 3 , the second vent hole 9 located at the side wall communicates with the atomized spray through hole 11 at the center position and has a certain angle. The clip The angle is 20 degrees to 70 degrees. The angle between the second vent hole 9 and the atomizing spray through hole 11 provides two functions for the injected gas, on the one hand, speeding up the spraying of the atomized liquid from the nozzle, and on the other hand, accelerating the effect of atomization, The atomized droplets are smaller.

其中,霧化噴射通孔11長度與等效直徑比為10:1-30:1,這樣可以保證霧化的液滴分裂的更徹底、更均勻。例如:霧化液滴在固定直徑的通孔中經過的距離越長,分裂的越徹底越均勻。第二通氣孔9用於提供噴霧裝置所需氣體,加快液滴進一步分裂,加強霧化效果。另外,該霧化噴射裝置下殼體10的側壁帶有一定的角度切面,該切面為製造帶有一定傾斜角度的第二通氣孔9提供支撐面。其中,耦合層8下表面到下殼體中心霧化噴射通孔11上表面的垂直距離為1mm-10mm。這樣,可以保證噴射流量的前提下,儘量使液體變成薄膜,更有利於在兆聲振盪下分裂為更小的液滴。Wherein, the ratio of the length of the atomizing spray through hole 11 to the equivalent diameter is 10:1-30:1, so as to ensure a more thorough and uniform splitting of the atomized droplets. For example, the longer the distance traveled by the atomized droplets in the through-holes of a fixed diameter, the more uniform and uniform the split. The second venting hole 9 is used to provide the gas required for the spraying device, accelerate the further splitting of the liquid droplets, and enhance the atomization effect. In addition, the side wall of the lower casing 10 of the atomizing spray device has a certain angular section which provides a supporting surface for manufacturing the second vent hole 9 with a certain inclination angle. The vertical distance from the lower surface of the coupling layer 8 to the upper surface of the atomizing spray through hole 11 in the center of the lower casing is 1 mm to 10 mm. In this way, it is possible to ensure that the liquid becomes a thin film under the premise of the injection flow rate, and it is more advantageous to split into smaller droplets under megasonic oscillation.

下面詳細說明清洗霧化噴射裝置的工作原理:The working principle of cleaning the atomizing spray device will be described in detail below:

氣體通過進氣口14進入換能器主體4中,通過換能器主體4上的第一通氣孔6噴射到換能器主體4和上殼體2之間的通道中。液體通過進液口13進入換能器主體4和上殼體2之間的通道中,從換能器主體4中的第一通氣孔6噴射出的氣體噴射到上述通道中的液體,使液體在毛細管和氣體噴射的作用下產生一定的分裂流,該分裂流流經耦合層8和下殼體10之間通道時,在兆聲的作用下進一步分裂為超微液滴流。Gas enters the transducer body 4 through the air inlet 14 and is injected into the passage between the transducer body 4 and the upper casing 2 through the first vent hole 6 on the transducer body 4. The liquid enters the passage between the transducer body 4 and the upper casing 2 through the inlet port 13, and the gas ejected from the first vent hole 6 in the transducer body 4 is ejected to the liquid in the passage to make the liquid Under the action of the capillary and the gas jet, a certain split flow is generated, and when the split flow flows through the passage between the coupling layer 8 and the lower casing 10, it further splits into a flow of ultrafine droplets under the action of megasound.

通過電纜接頭1與功率放大器連接對壓電晶體7施加交變電壓,壓電晶體7在交變電壓的作用下產生振動形成兆聲波,兆聲波通過耦合層8和下殼體10進行傳播。經過兆聲作用後產生的超微液滴流經過噴射裝置下殼體10的霧化噴射通孔11噴射出去,在噴射出去前,在下殼體10的霧化噴射通孔11中受到下殼體10中第二通氣孔9的氣體作用,加速超微液滴流分解為單一的超微液滴。An alternating voltage is applied to the piezoelectric crystal 7 through the connection of the cable connector 1 to the power amplifier. The piezoelectric crystal 7 generates vibration under the action of an alternating voltage to form a megasonic wave, and the megasonic wave propagates through the coupling layer 8 and the lower casing 10. The ultrafine droplet flow generated after the megasonic action is ejected through the atomizing ejection through hole 11 of the lower casing 10 of the injection device, and is received by the lower casing in the atomizing ejection through hole 11 of the lower casing 10 before being ejected. The gas action of the second venting hole 9 in 10 accelerates the decomposition of the ultrafine droplet stream into a single ultrafine droplet.

本發明提供的清洗霧化噴射裝置,結構簡單,集成度高,可有效實現噴射超微霧化液滴,在不損傷晶圓表面圖案的前提下,對晶圓進行有效清洗,並最大程度的節約水資源。The cleaning atomization spraying device provided by the invention has the advantages of simple structure and high integration, and can effectively realize the spraying of ultra-micro atomized droplets, and effectively cleans the wafer without damaging the surface pattern of the wafer, and maximizes the degree of Save water resources.

雖然本發明所揭露之實施方式如上,惟該之內容並非用以直接限定本發明之專利保護範圍。任何本發明所屬技術領域中具有通常知識者,在不脫離本發明所揭露之精神和範圍的前提下,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The embodiments of the present invention are as described above, but the contents are not intended to directly limit the scope of the invention. Equivalent modifications or variations of the present invention are intended to be included within the scope of the appended claims.

1‧‧‧電纜接頭1‧‧‧ cable connector

2‧‧‧上殼體2‧‧‧Upper casing

21‧‧‧第一階殼體21‧‧‧First-order housing

22‧‧‧第二階殼體22‧‧‧ second-order housing

3‧‧‧連接孔3‧‧‧connection hole

4‧‧‧換能器主體4‧‧‧Transducer body

5‧‧‧耦合層支撐部件5‧‧‧Coupling layer support parts

6‧‧‧第一通氣孔6‧‧‧First vent

7‧‧‧壓電晶體7‧‧‧Piezoelectric crystal

8‧‧‧耦合層8‧‧‧Coupling layer

9‧‧‧第二通氣孔9‧‧‧second vent

10‧‧‧下殼體10‧‧‧ Lower case

11‧‧‧霧化噴射通孔11‧‧‧Atomized spray through hole

12‧‧‧密封圈12‧‧‧ Seal

13‧‧‧進液口13‧‧‧ inlet port

14‧‧‧進氣口14‧‧‧air inlet

15‧‧‧螺絲孔15‧‧‧ screw holes

圖1為本發明一實施方式的清洗霧化噴射裝置結構示意圖;圖2為本發明一實施方式的清洗霧化噴射裝置俯視圖;圖3為本發明一實施方式的清洗霧化噴射裝置組裝示意圖; 圖4為本發明一實施方式的清洗霧化噴射裝置中換能器結構示意圖;以及圖5本發明一實施方式的清洗霧化噴射裝置中換能器剖面圖。1 is a schematic structural view of a cleaning atomizing spray device according to an embodiment of the present invention; FIG. 2 is a plan view showing a cleaning atomizing spray device according to an embodiment of the present invention; 4 is a schematic view showing the structure of a transducer in a cleaning atomizing spray device according to an embodiment of the present invention; and FIG. 5 is a cross-sectional view showing the transducer in the cleaning atomizing spray device according to an embodiment of the present invention.

1‧‧‧電纜接頭1‧‧‧ cable connector

2‧‧‧上殼體2‧‧‧Upper casing

21‧‧‧第一階殼體21‧‧‧First-order housing

22‧‧‧第二階殼體22‧‧‧ second-order housing

3‧‧‧連接孔3‧‧‧connection hole

4‧‧‧換能器主體4‧‧‧Transducer body

5‧‧‧耦合層支撐部件5‧‧‧Coupling layer support parts

6‧‧‧第一通氣孔6‧‧‧First vent

7‧‧‧壓電晶體7‧‧‧Piezoelectric crystal

8‧‧‧耦合層8‧‧‧Coupling layer

9‧‧‧第二通氣孔9‧‧‧second vent

10‧‧‧下殼體10‧‧‧ Lower case

12‧‧‧密封圈12‧‧‧ Seal

13‧‧‧進液口13‧‧‧ inlet port

14‧‧‧進氣口14‧‧‧air inlet

15‧‧‧螺絲孔15‧‧‧ screw holes

Claims (10)

一種清洗霧化噴射裝置,包括:一上殼體、與該上殼體連接的一下殼體;該上殼體為二階圓筒狀,包括一第一階殼體和一第二階殼體,該第一階殼體的橫截面積小於該第二階殼體的橫截面積,該第二階殼體中設有一換能器,該換能器包括呈圓筒狀且其表面設有多個第一通氣孔的一換能器主體和一耦合層;該下殼體的兩側壁設有一第二通氣孔,該下殼體的中心位置設有一霧化噴射通孔,該第二通氣孔與該霧化噴射通孔相通且具有夾角。 A cleaning atomizing spray device includes: an upper casing and a lower casing connected to the upper casing; the upper casing is a second-order cylindrical shape, and includes a first-stage casing and a second-order casing. The cross-sectional area of the first-stage housing is smaller than the cross-sectional area of the second-stage housing, and the second-stage housing is provided with a transducer, the transducer includes a cylindrical shape and a plurality of surfaces thereof a transducer body of the first venting hole and a coupling layer; a sidewall of the lower casing is provided with a second venting hole, and a center of the lower casing is provided with an atomizing spray through hole, the second vent hole It is in communication with the atomizing spray through hole and has an included angle. 如申請專利範圍第1項所述之清洗霧化噴射裝置,該耦合層通過一耦合層支撐部件固定在該換能器主體內部。 The cleaning atomizing spray device of claim 1, wherein the coupling layer is fixed inside the transducer body by a coupling layer supporting member. 如申請專利範圍第2項所述之清洗霧化噴射裝置,該耦合層包括一壓電晶體和一耦合片,該壓電晶體通過一導電膠與該耦合片連接。 The cleaning atomizing spray device of claim 2, wherein the coupling layer comprises a piezoelectric crystal and a coupling piece, and the piezoelectric crystal is connected to the coupling piece by a conductive paste. 如申請專利範圍第3項所述之清洗霧化噴射裝置,該耦合片由單一介質或多種介質製成,其厚度為1/4波長的整數倍。 The cleaning atomizing spray device according to claim 3, wherein the coupling piece is made of a single medium or a plurality of mediums, and has a thickness of an integral multiple of 1/4 wavelength. 如申請專利範圍第3項所述之清洗霧化噴射裝置,更包括一密封圈,該密封圈設置於該耦合層的下表面,用於密封該耦合層和該耦合層支撐部件。 The cleaning atomizing spray device of claim 3, further comprising a sealing ring disposed on a lower surface of the coupling layer for sealing the coupling layer and the coupling layer supporting member. 如申請專利範圍第1項所述之清洗霧化噴射裝置,該 第一階殼體的一側設有一進氣孔,該第二階殼體的一側設有一進液孔。 The cleaning atomizing spray device according to claim 1, wherein One side of the first-stage housing is provided with an air inlet hole, and one side of the second-stage housing is provided with a liquid inlet hole. 如申請專利範圍第1項所述之清洗霧化噴射裝置,該第二通氣孔與該霧化噴射通孔之間的夾角為20-70°。 The cleaning atomizing spray device of claim 1, wherein the angle between the second vent hole and the atomizing spray through hole is 20-70°. 如申請專利範圍第2項所述之清洗霧化噴射裝置,該耦合層下表面與該下殼體霧化噴射通孔上表面之間的垂直距離為1mm-10mm。 The cleaning atomizing spray device of claim 2, wherein a vertical distance between the lower surface of the coupling layer and the upper surface of the atomizing spray through hole of the lower casing is 1 mm to 10 mm. 如申請專利範圍第1項所述之清洗霧化噴射裝置,該換能器主體的側壁至該上殼體中的第二階殼體內壁距離為1mm-10mm。 The cleaning atomizing spray device of claim 1, wherein the distance between the side wall of the transducer body and the inner wall of the second step housing in the upper casing is 1 mm to 10 mm. 如申請專利範圍第2項所述之清洗霧化噴射裝置,該第一通氣孔的孔徑為1-3mm,其由上至下按圓周切面方向依次排列在該換能器主體上。The cleaning atomizing spray device according to claim 2, wherein the first vent hole has a hole diameter of 1-3 mm, which is sequentially arranged on the transducer body in a circumferential direction from top to bottom.
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