JP2005347761A - Substrate-cleaning device and substrate-cleaning method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate-cleaning device and a substrate-cleaning method, capable of sufficiently removing fine particles on the surface of a substrate and improving the cleaning power on the surface of the substrate. <P>SOLUTION: A cleaning liquid is supplied from a nozzle N having a tip part NS in the substrate opposite surface WF, between the upper surface Wa of a wafer W, rotated around the rotating axis R of the wafer and the substrate opposite surface WF opposed thereto. A vibration disk VF, provided in the substrate opposite surface WF, imparts ultrasonic vibration to the cleaning liquid. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate for cleaning various substrates such as a semiconductor wafer, a glass substrate for a liquid crystal display device, a PDP (plasma display panel) substrate, or a glass substrate or a ceramic substrate for a magnetic disk. The present invention relates to a cleaning apparatus and a substrate cleaning method.

  The manufacturing process of a semiconductor device includes a process of forming a fine pattern by repeatedly performing processes such as film formation and etching on the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”). For microfabrication, it is necessary to keep both surfaces of the wafer, particularly one surface (thin film forming surface) of the wafer on which a thin film is formed, so that the wafer is subjected to a cleaning process as necessary. For example, after the thin film formed on the thin film forming surface of the wafer is polished using an abrasive (hereinafter referred to as CMP process), the abrasive (slurry) remains on both surfaces of the wafer. Need to be removed.

  The conventional wafer cleaning apparatus for cleaning the wafer as described above includes, for example, a double-sided cleaning apparatus that scrubs and cleans both surfaces of the wafer while supplying the cleaning liquid to both sides of the wafer while rotating the wafer, and both surfaces of the wafer while rotating the wafer. A single-sided cleaning device that scrubs and ultrasonically cleans one side of the wafer (thin film forming surface) while supplying a cleaning solution to the wafer, and supplies pure water to both sides of the wafer while rotating the wafer, followed by washing with pure water. Is stopped and the wafer is rotated at a high speed to shake off and dry the moisture on the wafer surface.

  In particular, the above-described single-sided cleaning apparatus mainly includes a brush cleaning mechanism that scrubs the surface of the wafer with a sponge brush in order to remove particles fixed on the wafer surface, and a fine remaining on the wafer surface. In order to remove particles, an ultrasonic cleaning mechanism that supplies a cleaning liquid to which ultrasonic waves are applied toward the wafer surface is provided. By these mechanisms, fine particles such as dust and slurry adhering to the wafer surface are provided. You can remove the particles.

The ultrasonic cleaning mechanism applies an ultrasonic wave to the cleaning liquid by a vibration plate that receives ultrasonic pulses from an ultrasonic oscillator and vibrates ultrasonically, and discharges the cleaning liquid to which the ultrasonic waves are applied toward the wafer surface. A sonic nozzle is provided, and fine particles can be detached from the wafer surface and removed by the ultrasonic vibration energy of the cleaning liquid.
JP-A-8-130202

  However, with the recent high definition of thin film formation patterns, it is necessary to remove finer particles, and the ultrasonic cleaning mechanism of the conventional wafer cleaning apparatus described above removes these finer particles. The problem of not being able to respond to has occurred. That is, in the conventional ultrasonic cleaning mechanism, the distance from the tip of the discharge port of the ultrasonic nozzle to the wafer surface to which the cleaning liquid to which ultrasonic waves are actually applied is supplied (hereinafter referred to as discharge distance) is increased. Therefore, the ultrasonic vibration energy applied to the cleaning liquid during this distance is attenuated, and there is a problem that the wafer surface is not sufficiently ultrasonically cleaned and finer particles cannot be removed. Also, during the above-mentioned discharge distance, air in the atmosphere is mixed into the cleaning liquid to form bubbles, which also attenuate the ultrasonic vibration energy of the cleaning liquid, so that the wafer surface is sufficiently ultrasonic. There was also a problem that finer particles could not be removed without being washed.

Therefore, fine particles such as dust and slurry remain on the wafer surface, leading to a decrease in yield in the manufacturing process of the semiconductor device, which is a serious problem.
Accordingly, an object of the present invention is to provide a substrate cleaning apparatus and a substrate cleaning method capable of solving the above technical problems, sufficiently removing fine particles on the substrate surface, and improving the cleaning power of the substrate surface. There is to do.

  In order to solve the above technical problem, the invention according to claim 1 is a substrate rotating means for rotating the substrate in a predetermined rotation direction around a rotation axis perpendicular to the substrate, and is rotated by the substrate rotating means. A substrate facing surface provided to be able to face the substrate surface, a nozzle for supplying a cleaning liquid between the substrate and the substrate facing surface with a tip portion disposed in the substrate facing surface, and a substrate facing surface. An ultrasonic cleaning member having a vibration surface for applying ultrasonic vibration to a cleaning liquid supplied between a substrate and a substrate facing surface from a nozzle.

According to a second aspect of the present invention, in the substrate cleaning apparatus according to the first aspect, the tip portion of the nozzle is provided in an internal region of the vibration surface.
According to a third aspect of the present invention, in the substrate cleaning apparatus according to the first aspect, the tip of the nozzle is provided in an external region of the vibration surface.
According to a fourth aspect of the present invention, in the substrate cleaning apparatus according to the third aspect, the distance from the tip of the nozzle to the rotation axis of the substrate is smaller than the distance from at least a part of the vibration surface to the rotation axis of the substrate. This is a substrate cleaning apparatus.

According to a fifth aspect of the present invention, in the substrate cleaning apparatus according to the third or fourth aspect, the tip of the nozzle is disposed upstream of at least a part of the vibration surface in the rotation direction of the substrate. The substrate cleaning apparatus is characterized.
The invention according to claim 6 is the substrate cleaning apparatus according to any one of claims 1 to 5, further comprising an interval setting means capable of setting an interval between the substrate facing surface and the substrate surface to a predetermined interval. The substrate cleaning apparatus is characterized.

According to a seventh aspect of the present invention, in the substrate cleaning apparatus according to the sixth aspect, the interval setting means can set the interval between the portions where the substrate and the substrate facing surface are closest to each other to 3 mm or less. The substrate cleaning apparatus is characterized.
According to an eighth aspect of the present invention, in the substrate cleaning apparatus according to the sixth or seventh aspect, the interval setting unit is supplied from the nozzle and a applying unit that applies a force toward the substrate surface to the ultrasonic cleaning member. And a cleaning liquid adjusting means for adjusting the flow rate or pressure of the cleaning liquid.

The invention according to claim 9 is the substrate cleaning apparatus according to any one of claims 1 to 8, further comprising moving means for moving the ultrasonic cleaning member along the substrate surface rotated by the substrate rotating means. This is a substrate cleaning apparatus.
According to a tenth aspect of the present invention, in the substrate cleaning apparatus according to the ninth aspect, the moving means includes at least a position where the substrate facing surface intersects a rotation axis of the substrate, and the substrate facing surface is an outer periphery of the substrate. The substrate cleaning apparatus is characterized in that the ultrasonic cleaning member is moved between crossing positions.

The invention according to claim 11 is the substrate cleaning apparatus according to claim 9 or 10, wherein the substrate cleaning apparatus is provided separately from the ultrasonic cleaning member and supplies the cleaning liquid toward the vicinity of the rotation axis of the substrate surface. The substrate cleaning apparatus further includes a cleaning liquid supply unit.
According to a twelfth aspect of the present invention, there is provided a substrate rotation step for rotating a substrate about a rotation axis perpendicular to the substrate, a substrate surface rotated in the substrate rotation step, and a substrate facing surface facing the substrate surface. In the meantime, the cleaning liquid supply process in which the nozzle having the tip in the substrate facing surface supplies the cleaning liquid, and the vibration surface provided in the substrate facing surface with respect to the cleaning liquid supplied in this cleaning liquid supplying process has ultrasonic vibration. An ultrasonic cleaning step of ultrasonically cleaning the surface of the substrate.

According to the substrate cleaning apparatus of the first aspect of the present invention, the tip is located in the substrate facing surface between the substrate rotated by the substrate rotating means and the substrate facing surface (hereinafter referred to as a gap space). The cleaning liquid is supplied and filled from the nozzle, and the cleaning liquid filled in the gap space is given ultrasonic waves by the vibration surface in the substrate facing surface.
Here, the cleaning liquid filled in the gap space is not exposed to the atmosphere and air such as bubbles is not mixed. Therefore, since the cleaning liquid filled in the gap space in this way efficiently transmits ultrasonic vibration energy when ultrasonic vibration is applied, the fine particles on the substrate surface are sufficiently removed, The surface detergency can be improved.

  Further, since the substrate is rotated in a predetermined rotation direction around the rotation axis, the cleaning liquid filled in the gap space always receives a centrifugal force in a direction away from the rotation axis of the substrate, and the direction of this centrifugal force Rotational force is received in a direction orthogonal to the direction, that is, a direction along the rotation direction of the substrate. For this reason, the cleaning liquid in the gap space smoothly flows out of the gap space without staying in the gap space. Therefore, the cleaning liquid replacement efficiency in the gap space is improved, and the cleaning liquid to which fresh ultrasonic vibration is always applied is in contact with the substrate surface, so that the cleaning power of the substrate surface can be further improved.

  The “substrate rotating means” here may be an adsorption-type spin chuck that rotates about the rotation axis of the substrate while adsorbing and holding one surface of the substrate. Alternatively, a pin holding type spin chuck that rotates about the rotation axis of the substrate while holding the pins at the end face may be used. Alternatively, it may be at least three roller pins that rotate around an axis parallel to the rotation axis of the substrate while being in contact with the end surface of the peripheral edge of the substrate. That is, any configuration may be used as long as the substrate is rotated in a predetermined rotation direction around a rotation axis perpendicular to the substrate.

The “substrate surface” here may be a surface on which a thin film of a substrate is formed or a surface on which a thin film of a substrate is not formed. Good. In other words, the substrate surface may be any surface except the end surface of the peripheral edge of the substrate.
Furthermore, the “substrate facing surface” here may be a surface facing the substrate surface, and may be a surface parallel to the substrate surface or a surface not parallel to the substrate surface. Further, the substrate facing surface is not limited to a flat surface, and may be a curved surface or a surface having a convex portion or a concave portion.

Furthermore, the “cleaning liquid” here may be any of pure water and chemicals (for example, hydrofluoric acid, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, ammonia, or an aqueous hydrogen peroxide solution thereof). Any liquid that can clean the substrate surface may be used.
According to the substrate cleaning apparatus of the second aspect, the tip of the nozzle is provided in the inner region of the vibration surface. That is, the tip of the nozzle is surrounded by the vibration surface in the substrate facing surface. Here, when the relationship between the distance between the substrate surface and the substrate facing surface (hereinafter referred to as the substrate facing distance), the flow rate or pressure of the cleaning liquid, and the rotation speed of the substrate is appropriate, the gap space is filled with the cleaning liquid. It becomes a state. However, if this is not the case, the cleaning liquid supplied from the tip of the nozzle receives centrifugal force and rotational force accompanying the rotation of the substrate, and moves away from the rotation axis of the substrate and downstream in the rotation direction of the substrate. Therefore, there may be a case where a part of the gap space is not filled with the cleaning liquid.

However, even in such a case, since the vibration surface is arranged so as to surround the tip of the nozzle, no matter which direction the cleaning liquid flows from the tip of the nozzle, the ultrasonic vibration is surely applied to the cleaning liquid. Can be granted. Therefore, it is possible to reliably improve the cleaning power of the substrate surface.
According to the substrate cleaning apparatus of the third aspect of the invention, the tip of the nozzle is provided in the external region of the vibration surface. That is, in the surface facing the substrate, the tip of the nozzle is located away from the vibration surface. In this case, the structure of the vibration surface can be simplified as compared with the case where the tip end portion of the nozzle is surrounded by the vibration surface.

  Thus, when the tip of the nozzle is provided in the external region of the vibration surface, for example, the distance from the tip of the nozzle to the rotation axis of the substrate as in the substrate cleaning apparatus according to the invention according to claim 4, It may be set smaller than the distance from at least a part of the vibration surface to the rotation axis of the substrate. That is, at least a part of the vibration surface is disposed at a position farther from the rotation axis of the substrate than the tip of the nozzle. In this way, since the cleaning liquid supplied from the tip of the nozzle is guided in a direction with a vibration surface by the centrifugal force generated by the rotation of the substrate, ultrasonic vibration can be reliably applied to the cleaning liquid. Therefore, it is possible to reliably improve the cleaning power of the substrate surface.

  Here, “at least a part of the vibration surface” means, for example, a portion of the vibration surface that is closest to the outer peripheral portion of the substrate, that is, a portion of the vibration surface that is farthest from the rotation axis of the substrate. Good. For example, when this portion is arranged at a position farther from the rotation axis of the substrate than the tip of the nozzle, the cleaning liquid supplied from the tip of the nozzle surely passes through the vibration surface by the action of centrifugal force. become.

  Further, for example, as in the substrate cleaning apparatus of the invention according to claim 5, the tip of the nozzle may be arranged upstream of at least a part of the vibration surface with respect to the rotation direction of the substrate. That is, at least a part of the vibration surface is disposed downstream of the tip of the nozzle with respect to the rotation direction of the substrate. In this way, since the cleaning liquid supplied from the tip of the nozzle is guided in a direction with the vibration surface by the rotational force due to the rotation of the substrate, it is possible to reliably apply ultrasonic vibration to the cleaning liquid. Therefore, it is possible to reliably improve the cleaning power of the substrate surface.

Here, “at least a part of the vibration surface” may be, for example, the most downstream portion of the vibration surface with respect to the rotation direction of the substrate. For example, when this portion is disposed downstream of the nozzle tip with respect to the rotation direction of the substrate, the cleaning liquid supplied from the nozzle tip surely passes through the vibration surface by the action of the rotational force. become.
According to the substrate cleaning apparatus of the sixth aspect of the present invention, the cleaning liquid can be filled in the gap space by setting the substrate facing interval to an appropriate interval by the interval setting means. For example, when the substrate surface is cleaned, the interval setting means brings the ultrasonic cleaning member close to the substrate surface, and when the substrate surface is not cleaned, for example, when the substrate is transported, the ultrasonic cleaning member The substrate facing surface may be separated from the substrate surface. Further, for example, the substrate facing distance may be finely adjusted.

  Alternatively, the distance setting means, for example, as in the substrate cleaning apparatus of the invention according to claim 7, the distance between the portions where the substrate and the substrate facing surface are closest (hereinafter referred to as the closest distance) is 3 mm or less. It may be possible to set to. Here, a normal cleaning liquid used for cleaning the substrate surface forms a liquid film having a thickness of approximately 3 mm or more on the substrate surface due to the surface tension. Therefore, in the gap space, the gap space is surely filled with the cleaning liquid in the portion where the substrate facing distance is 3 mm or less. Therefore, the ultrasonic vibration energy transmitted to the cleaning liquid can be sufficiently maintained, and the cleaning power of the substrate surface can be further improved.

  Alternatively, as in the substrate cleaning apparatus of the invention according to claim 8, the interval setting means adjusts the flow rate or pressure of the cleaning liquid supplied from the nozzle while applying a force toward the substrate surface to the ultrasonic cleaning member. By doing so, you may set a board | substrate opposing space | interval. That is, the substrate facing interval is adjusted by balancing the force for pressing the ultrasonic cleaning member toward the substrate surface and the repulsive force due to the supply flow rate or pressure of the cleaning liquid to the gap space.

  In this case, the substrate facing distance can be easily and precisely adjusted only by adjusting the supply flow rate or pressure of the cleaning liquid. Furthermore, when the substrate facing interval becomes large and an air layer or bubbles try to enter the cleaning liquid in the gap space, the force from the applying means acts to automatically return the substrate facing interval to a decreasing direction. When the substrate facing distance becomes smaller and the substrate facing surface of the ultrasonic cleaning member tries to contact the substrate surface, the flow rate or pressure of the cleaning liquid adjusted by the cleaning liquid adjusting means acts and the substrate facing distance is automatically set. Return in the direction of increasing. Therefore, in either case, the substrate facing distance can be automatically adjusted to the optimum distance.

  The applying means may be, for example, an elastic body such as an elastic spring, bellows or rubber for applying an elastic force to the ultrasonic cleaning member in the direction toward the substrate surface, or at a predetermined air pressure. It may be a cylinder having a pressurized cylinder chamber. Further, the cleaning liquid adjusting means may be, for example, a flow rate adjusting valve or a pressure adjusting valve interposed in a pipe connected to a nozzle that supplies the cleaning liquid.

  According to the substrate cleaning apparatus of the ninth aspect of the invention, the ultrasonic cleaning member can be moved along the rotated substrate surface by the moving means. In this way, even if the substrate-facing surface of the ultrasonic cleaning member is relatively small, the substrate-facing surface can be moved along the substrate surface, so that ultrasonic cleaning can be performed over a wide area of the substrate surface. It can be carried out. For example, as in the substrate cleaning apparatus of the invention according to claim 10, the ultrasonic cleaning member is moved in such a range that the substrate facing surface intersects both the rotation axis of the substrate and the outer periphery of the substrate. For example, ultrasonic cleaning can be performed over the entire surface of the substrate.

In addition, when the substrate facing surface of the ultrasonic cleaning member is sufficiently large and formed in a region including the rotation axis and the outer peripheral portion of the substrate, this moving means is not particularly necessary, and the substrate is rotated. In this way, ultrasonic cleaning can be performed over the entire surface of the substrate.
Further, when the moving means moves the ultrasonic cleaning member in a direction away from the rotation axis of the substrate, the interval setting means sets the interval between the substrate facing surface and the substrate surface to the first interval, and conversely When the moving means moves the ultrasonic cleaning member in a direction approaching the rotation axis of the substrate, the interval setting means sets the second interval between the substrate facing surface and the substrate surface to be larger than the first interval. An interval may be set. In this case, when the ultrasonic cleaning member is moved away from the rotation axis of the substrate, the substrate surface is ultrasonically cleaned by reducing the substrate facing distance so that the ultrasonic cleaning member approaches the rotation axis of the substrate. In this case, the substrate facing interval can be increased so that the substrate surface is not cleaned. That is, the ultrasonic cleaning member is always moved in the direction from the inside to the outside of the substrate, that is, in the direction of the centrifugal force applied to the cleaning liquid on the substrate surface. For this reason, since the flow of the cleaning liquid becomes smooth, there is little stagnation of the cleaning liquid, and the particles on the substrate surface can be efficiently swept out of the substrate, and the cleaning liquid replacement efficiency is improved because the cleaning liquid replacement efficiency is improved. Can be further improved.

  According to the substrate cleaning apparatus of the eleventh aspect of the invention, the cleaning liquid is supplied from the auxiliary cleaning liquid supply means toward the vicinity of the rotation axis of the substrate surface, separately from the ultrasonic cleaning member. Here, when the ultrasonic cleaning member is moved by the moving means and is positioned near the peripheral edge of the substrate, the vicinity of the rotation axis of the substrate is separated from the ultrasonic cleaning member due to the action of centrifugal force applied to the cleaning liquid. The supply of the cleaning liquid has not been reached, and the part is dried. However, according to the substrate cleaning apparatus of the invention according to claim 11, since the cleaning liquid is supplied to the vicinity of the rotation axis of the substrate and the portion is prevented from being dried, particles such as dust and slurry adhere to the substrate surface. Can be prevented.

  Further, the auxiliary liquid supply means may simply eject only the cleaning liquid, or may be a nozzle that supplies the cleaning liquid to which ultrasonic waves are applied. The cleaning liquid supplied from the auxiliary liquid supply means is preferably the same type as the cleaning liquid supplied from the ultrasonic cleaning member because of the problem of concentration management of the cleaning liquid. However, by supplying a different type of cleaning liquid from the cleaning liquid supplied from the ultrasonic cleaning member, it is possible to obtain a cleaning effect different from that of the cleaning liquid supplied from the ultrasonic cleaning member.

  According to the substrate cleaning method of the twelfth aspect of the present invention, the tip portion is provided in the substrate facing surface between the surface of the substrate rotated about the rotation axis perpendicular to the substrate and the substrate facing surface facing the substrate surface. The nozzle having the above supplies the cleaning liquid, and the vibration surface provided in the substrate facing surface imparts ultrasonic vibration to the cleaning liquid, so that the substrate surface is ultrasonically cleaned. For this reason, the substrate processing method which has an effect similar to the invention described in claim 1 can be provided.

  According to the substrate cleaning apparatus of the first aspect of the present invention, the cleaning liquid is filled in the gap space, and when ultrasonic vibration is applied, the ultrasonic vibration energy is efficiently transmitted. Is sufficiently removed, and the cleaning power of the substrate surface can be improved. In addition, the cleaning liquid in the gap space smoothly flows out of the gap space without staying in the gap space due to the rotation of the substrate, so that the replacement efficiency of the cleaning liquid in the gap space is improved and the ultrasonic wave is always fresh. Since the cleaning liquid to which vibration is applied is in contact with the substrate surface, the cleaning power of the substrate surface can be further improved.

According to the substrate cleaning apparatus of the second aspect of the invention, the ultrasonic vibration can be reliably applied to the cleaning liquid regardless of the direction in which the cleaning liquid flows from the tip of the nozzle, so that the cleaning power of the substrate surface is reliably improved. There is an effect that can be.
According to the substrate cleaning apparatus of the third aspect of the present invention, there is an effect that the structure of the vibration surface can be simplified as compared with the case where the tip portion of the nozzle is surrounded by the vibration surface.

According to the substrate cleaning apparatus of the fourth aspect of the invention, the cleaning liquid supplied from the tip of the nozzle is guided in a certain direction of the vibration surface by the centrifugal force due to the rotation of the substrate, so that ultrasonic vibration is surely given to the cleaning liquid. Therefore, the cleaning power of the substrate surface can be reliably improved.
According to the substrate cleaning apparatus of the fifth aspect of the invention, the cleaning liquid supplied from the tip of the nozzle is guided in the direction of the downstream vibration surface by the rotational force due to the rotation of the substrate. The sound wave vibration can be applied, and thus the cleaning power of the substrate surface can be surely improved.

According to the substrate cleaning apparatus of the sixth aspect of the invention, if the interval between the substrates is set to an appropriate interval by the interval setting means, the cleaning liquid can be filled in the gap space.
According to the substrate cleaning apparatus of the seventh aspect of the invention, in the gap space where the gap between the substrates is 3 mm or less, the gap space is surely filled with the cleaning liquid, so that the cleaning power of the substrate surface is further improved. There is an effect that can be.

According to the substrate cleaning apparatus of the invention according to claim 8, the substrate facing distance can be easily and precisely adjusted only by adjusting the supply flow rate or pressure of the cleaning liquid, and further, the substrate facing distance can be automatically adjusted to the optimum distance. There is an effect.
According to the substrate cleaning apparatus of the ninth aspect of the invention, even if the substrate facing surface of the ultrasonic cleaning member is relatively small, the substrate facing surface can be moved along the substrate surface. There is an effect that ultrasonic cleaning can be performed over a wide range.

According to the substrate cleaning apparatus of the invention of claim 10, even if the substrate facing surface of the ultrasonic cleaning member is relatively small, the range in which the substrate facing surface intersects both the rotation axis of the substrate and the outer periphery of the substrate. Thus, since the ultrasonic cleaning member is moved, the ultrasonic cleaning can be performed over the entire surface of the substrate.
According to the substrate cleaning apparatus of the invention according to claim 11, since the cleaning liquid is supplied to the vicinity of the rotating shaft of the substrate and the portion is prevented from being dried, particles such as dust and slurry are prevented from adhering to the substrate surface. There is an effect that can be done.

  According to the substrate cleaning method of the twelfth aspect of the invention, it is possible to provide a substrate processing method that has the same effect as that of the first aspect of the invention.

Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention for solving the above technical problem will be described in detail with reference to the accompanying drawings.
FIG. 1 is a perspective view schematically showing a configuration of a main part of a substrate cleaning apparatus according to an embodiment of the present invention. The substrate cleaning apparatus scrubs both surfaces of the wafer after the CMP process to remove relatively large particles, and then scrubs and ultrasonically cleans the upper surface Wa (thin film forming surface) of the wafer W. An apparatus for removing relatively fine particles. Further, the wafer is carried out or carried into the substrate cleaning apparatus by transferring the wafer having a hand (H indicated by a two-dot chain line in FIG. 1) that holds the lower surface Wb (surface opposite to the thin film forming surface) of the wafer W by suction. It is appropriately performed by a robot or the like.

  The substrate cleaning apparatus includes a wafer rotating mechanism 10 that rotates a wafer W in a rotation direction F about a rotation axis R, an ultrasonic cleaning mechanism 20 for ultrasonic cleaning the wafer upper surface Wa, and a scrub cleaning of the wafer upper surface Wa. And an auxiliary liquid supply mechanism 40 that supplies a cleaning liquid toward the vicinity of a point O (wafer center O) where the wafer upper surface Wa intersects with the rotation axis R of the wafer.

  The wafer rotation mechanism 10 is provided at the upper end portion of the spin shaft 11 which is rotated in the direction of the rotation direction F when a rotational driving force is transmitted from a rotational drive source (not shown), and the lower surface Wb of the wafer is the upper surface. The spin chuck 12 is held by suction through a plurality of suction holes. With these configurations, the wafer rotation mechanism 10 can rotate the wafer W in the rotation direction F about the rotation axis R of the wafer perpendicular to the wafer W while adsorbing and holding the lower surface Wb of the wafer. It has become.

  The ultrasonic cleaning mechanism 20 includes a substrate facing surface WF provided so as to face the wafer upper surface Wa, and a nozzle (which will be described later) that supplies a cleaning liquid such as pure water with a tip portion disposed in the substrate facing surface WF. 2) and a vibration surface (VF in FIG. 2 described later) that is provided in the substrate facing surface WF and applies ultrasonic vibration to the cleaning liquid supplied from the nozzle, An ultrasonic cleaning head 21 for applying ultrasonic vibration to the cleaning liquid supplied between the wafer upper surface Wa, a swing arm 22 that holds the ultrasonic cleaning head 21 at one end, and the swing arm 22 And a swing drive source 24 such as a motor that rotates (swings) within a predetermined angle range around the arm shaft 23, and a lift drive such as a motor that moves the ultrasonic cleaning head 21 and the swing arm 22 up and down. With source 25 There.

  A swing transmission mechanism 24 t that transmits the rotational driving force from the swing drive source 24 to the swing arm 22 is provided between the swing arm 22 and the swing drive source 24. For example, the swing transmission mechanism 24t includes a pair of pulleys attached to the output shaft of the motor as the swing drive source 24 and the arm shaft 23, and a belt stretched between the pair of pulleys. Belt and pulley mechanism. Accordingly, when the output shaft of the motor as the swing drive source 24 is rotated, the arm shaft 23 is rotated and the swing arm 23 is rotated.

  Further, between the swing arm 22 and the lift drive source 25, a lift transmission mechanism 25t that converts the rotational drive force from the lift drive source 25 into a vertical drive force and transmits it to the swing arm 22 is provided. ing. For example, the lift transmission mechanism 25t linearly connects a ball screw shaft rotatably connected to an output shaft of a motor as the lift drive source 25 and a structure from the swing arm 22 to the swing drive source 24. A ball screw mechanism or the like including a mover that is movably held and is screwed onto a ball screw shaft is provided. As a result, if the output shaft of the motor as the lifting drive source 25 is rotated, the ball screw shaft rotates and the mover moves up and down, and the structure from the swing arm 23 to the swing drive source 24 is Go up and down.

  With these configurations, the ultrasonic cleaning mechanism 20 can reciprocate the ultrasonic cleaning head 21 (more precisely, the central portion of the substrate facing surface WF) along the paths A1 and A3 by the swing drive source 24. It can be moved up and down along the paths A2 and A4 by the lifting drive source 25. That is, the ultrasonic cleaning mechanism 20 routes the ultrasonic cleaning head 21 while maintaining a state in which the distance between the wafer upper surface Wa and the substrate facing surface WF (hereinafter referred to as the substrate facing distance D) is the first distance D1. After horizontally moving on A1 in the direction away from the rotation axis R of the wafer, the path A2 is raised, and then the substrate facing distance D is a second distance D2 larger than the first distance D1. While maintaining the horizontal movement on the path A2 in a direction approaching the rotation axis R of the wafer, the movement on the path A4 is lowered.

  The brush cleaning mechanism 30 includes a brush part 31 having a sponge brush for scrub cleaning the wafer upper surface Wa, a swing arm 32 that rotatably holds the brush part 31 at one end, and the swing arm 32. Oscillating drive source 34 such as a motor that rotates (swings) within a predetermined angle range around arm shaft 33, and elevating drive source 35 such as a motor that elevates brush unit 31 and oscillating arm 32 in the vertical direction. It is made up of. The brush portion 31 is rotated by a rotation drive source such as a motor (not shown) provided in the swing arm 32. A swing transmission mechanism 34t having a structure similar to that of the ultrasonic cleaning mechanism 20 and a lift are provided between the swing arm 32 and the swing drive source 34 and between the swing arm 32 and the lift drive source 35. A transmission mechanism 35t is provided.

  With these configurations, similarly to the ultrasonic cleaning mechanism 20, the brush cleaning mechanism 30 can horizontally move the brush portion 31 along the wafer upper surface Wa by the swing drive source 24, and the elevation drive source 25. Can be moved up and down. The movements of the brush unit 31 and the ultrasonic cleaning head 21 are controlled so that they do not interfere near the center O of the wafer.

  Further, the auxiliary liquid supply mechanism 40 includes an auxiliary liquid supply nozzle 41 that supplies the cleaning liquid toward the vicinity of the center O of the wafer upper surface Wa, an auxiliary liquid pipe 42 that supplies the cleaning liquid to the auxiliary liquid supply nozzle 41, and the auxiliary liquid supply nozzle 42. It consists of a cleaning liquid supply source 43 to which a liquid pipe 42 is connected. A valve 44 for starting / stopping the supply of the auxiliary liquid from the auxiliary liquid supply nozzle 41 is interposed in the middle of the auxiliary liquid pipe 42.

  The cleaning liquid from the auxiliary liquid supply mechanism 40 is supplied to the center O of the wafer at least while the ultrasonic cleaning head 21 having the nozzle is not positioned near the center O of the wafer. . For this reason, the entire area of the wafer upper surface Wa is always supplied with the cleaning liquid. However, in order to further prevent the wafer upper surface Wa from being dried, the cleaning liquid is always supplied from the auxiliary liquid supply nozzle 41 to the wafer upper surface Wa while the wafer W is held on the spin chuck 12. Is preferred.

  Next, the cleaning processing operation by the substrate cleaning apparatus having the above configuration will be briefly described. First, in a state where the ultrasonic cleaning head 21 is positioned at the upper end of the path A2, a wafer W whose both surfaces have been cleaned in advance is carried into the substrate cleaning apparatus by a hand H of a wafer transfer robot (not shown), and the spin chuck 12 It is placed on the upper surface of and held by suction. The cleaning liquid is supplied from the liquid supply nozzle 41 of the auxiliary liquid supply mechanism 40 toward the vicinity of the center O of the wafer almost simultaneously with the adsorption and holding of the wafer W by the spin chuck 12. Next, the spin chuck 12 holding the wafer W by suction is rotated at a high speed by a rotation drive source (not shown), and the wafer W is rotated in the direction of the rotation direction F around the rotation axis R (substrate rotation process).

The swing arm 22 is rotated by the swing drive source 24 and the ultrasonic cleaning head 21 of the ultrasonic cleaning mechanism 20 is moved above the center O of the wafer along the path A3. A cleaning liquid is supplied from the nozzle of the sonic cleaning mechanism 20 (cleaning liquid supply step).
Next, the swing arm 22 is lowered along the path A4 by the lifting drive source 25, and the ultrasonic cleaning head 21 is brought close to the wafer upper surface Wa near the center O of the wafer. Thereafter, the ultrasonic cleaning head 21 is moved and moved up and down in the order of the paths A1, A2, A3, and A4 as described above, and ultrasonic cleaning is performed (ultrasonic cleaning process). Note that scrub cleaning by the brush cleaning mechanism 20 is performed simultaneously with or before or after the ultrasonic cleaning step.

  Then, the rotation of the wafer W by the wafer rotation mechanism 10 is stopped, and the supply of the cleaning liquid from the ultrasonic cleaning mechanism 20 is stopped. Finally, immediately after the supply of the cleaning liquid from the auxiliary liquid supply mechanism 40 is stopped, the wafer W is unloaded from the substrate cleaning apparatus by the hand H ′ of the wafer transfer robot (not shown), and this substrate processing for one wafer W is performed. The cleaning process in the apparatus ends. Thereafter, the wafer is washed and dried by the next washing / drying apparatus, and finally finished, and is accommodated in a cassette capable of accommodating a plurality of wafers W.

  Next, the ultrasonic cleaning head 21 of the ultrasonic cleaning mechanism 20 which is a characteristic part of the present invention will be described in detail with reference to the drawings. FIG. 2 is a cross-sectional view of the configuration of the ultrasonic cleaning head 21 as seen from the side of the apparatus. The ultrasonic cleaning head 21 has, for example, a main body portion 211 made of a fluororesin such as Teflon tetrafluoride (polytetrafluoroethylene), and a vibration surface VF in a substrate facing surface WF corresponding to the bottom surface of the main body portion 211. A donut-shaped diaphragm 212 in a plan view and a donut-shaped vibrator 213 in a plan view that is affixed to the upper surface of the diaphragm 212 and receives a pulse from the ultrasonic oscillator 214 to ultrasonically vibrate the diaphragm 212. The above-mentioned nozzle N has a front end NS in the substrate facing surface WF, and is inserted substantially through the center of the main body 211.

  The main body 211 is fixed to the lower surface of one end of the swing arm 22 by a bolt or the like, and the nozzle N inserted through the main body 211 is connected to the nozzle pipe NH passing through the swing arm 22. The auxiliary liquid pipe 42 of the auxiliary liquid supply mechanism 40 is connected to a cleaning liquid supply source 43 to which the auxiliary liquid pipe 42 is connected. Further, a valve NV for starting / stopping the supply of the cleaning liquid from the nozzle N is interposed in the middle of the nozzle pipe NH.

  With the above configuration, when the valve NV is opened and the cleaning liquid is supplied from the nozzle N, and the ultrasonic cleaning head 21 is brought close to the position where the substrate facing distance D becomes the first distance D1, A cleaning liquid is filled in a space (gap space K) sandwiched between the substrate facing surfaces WF. Then, ultrasonic vibration from the vibration plate 212 is applied to the cleaning liquid filled in the gap space K, and ultrasonic cleaning of the wafer upper surface Wa is performed.

Here, since the cleaning liquid filled in the gap space K does not come into contact with the atmosphere in the gap space K, air such as bubbles is not mixed therein. Therefore, since this cleaning liquid efficiently transmits ultrasonic vibration energy when ultrasonic vibration is applied, fine particles on the substrate surface can be sufficiently removed, and the cleaning power of the substrate surface can be improved.
And the 1st space | interval D1 should just be a space | interval with which the gap | interval space K is fully filled with a washing | cleaning liquid, and is normally set to about 3 mm or less, Preferably about 1-2 mm. In this embodiment, the substrate facing distance D is set by the lifting drive source 25. As shown in the explanation of FIG. 1 above, the substrate facing distance D is set by the lifting drive source 25. Is set to two intervals, a first interval D1 and a second interval D2.

  FIG. 3 is a plan view showing the relationship between the wafer W and the substrate facing surface WF, the vibration surface VF, and the nozzle tip NS of the ultrasonic cleaning head 21. As described above, when the swing arm 22 is rotated about the arm shaft 23 by the predetermined angle α in the state where the substrate facing distance D is the first distance D1, the substrate facing surface WF becomes the surface of the wafer. The ultrasonic cleaning head 21 is moved on the path A1 from the position WF1 intersecting the rotation axis R to the outer position WF2 of the wafer W. Further, the passing region of the substrate facing surface WF of the ultrasonic cleaning head 21 includes from the center O of the wafer to the outer periphery of the wafer W.

  Therefore, when the wafer W is rotated by 360 degrees or more in the direction of the rotation direction F, the passing area of the substrate facing surface WF covers the entire wafer upper surface Wa, and the entire wafer upper surface Wa can be ultrasonically cleaned. It becomes. This effect can be achieved if the ultrasonic cleaning head 21 is moved at least between the position WF1 and the position WF3 where the substrate facing surface WF intersects the outer periphery of the wafer W.

  Next, the behavior of the cleaning liquid on the wafer upper surface Wa will be described. First, the cleaning liquid on the wafer upper surface Wa is given a centrifugal force in the direction away from the rotation axis R of the wafer and a rotation force in the direction of the rotation direction F of the wafer W by the rotation of the wafer W. For this reason, the cleaning liquid supplied to the wafer upper surface Wa tends to flow in the direction away from the rotation axis R of the wafer and the direction of the rotation direction F.

  Here, when the relationship between the supply flow rate of the cleaning liquid and the rotation speed of the wafer W is appropriate, for example, when the supply flow rate is high and the rotation speed of the wafer W is low, the cleaning liquid film is formed thick. However, when the supply flow rate is small and the rotation speed of the wafer W is high, a thin film of the cleaning liquid is formed, and the cleaning liquid is in the gap space K. It is not satisfied, and it is biased in the direction away from the rotation axis R of the wafer and in the direction of the rotation direction F. However, in this embodiment, the periphery of the nozzle tip NS is surrounded by the vibration surface VF, that is, the nozzle tip NS is provided in the inner region of the vibration surface VF. Regardless of the direction in which the cleaning liquid is biased, ultrasonic vibrations can be sufficiently applied to the cleaning liquid.

  However, when the tip end NS of the nozzle has to be provided in the external region of the vibration surface VF due to the structure of the ultrasonic cleaning head 21, the structure shown in FIGS. The other ultrasonic cleaning head 121 may be used. FIG. 4 is a cross-sectional view of the configuration of the ultrasonic cleaning head 121 as seen from the side of the apparatus. FIG. 5 is a plan view showing the relationship between the wafer W and the substrate facing surface WF, the vibration surface VF, and the nozzle tip NS of the ultrasonic cleaning head 121. 4 and 5, the detailed description of the same parts as those in FIGS. 2 and 3 is omitted, and the same reference numerals as those in FIGS. 2 and 3 are used. Show.

  In this ultrasonic cleaning head 121, the tip end NS of the nozzle is located at a position away from the circular diaphragm 212 in plan view. That is, the nozzle tip NS is disposed in an external region of the vibration surface VF. The portion VFa of the vibration surface VF that is closest to the outer peripheral portion of the wafer W is disposed at a position further away from the rotation axis R of the wafer with respect to the tip portion NS of the nozzle. The distance from the tip NS to the rotation axis R of the wafer is smaller than the distance from the portion VFa of the vibration surface VF closest to the outer periphery of the wafer W to the rotation axis R of the wafer. In this way, since the cleaning liquid supplied from the nozzle tip NS is guided in the direction of the vibration surface VF by the centrifugal force generated by the rotation of the wafer W, ultrasonic vibration can be reliably applied to the cleaning liquid.

  In addition, the nozzle tip NS is disposed upstream of the most downstream portion VFb of the vibration surface VF with respect to the rotation direction F of the wafer W with respect to the rotation direction F of the wafer W. In this way, the cleaning liquid supplied from the nozzle tip NS is guided in the direction of the vibration surface VF by the rotational force caused by the rotation of the wafer W, so that ultrasonic vibration can be reliably applied to the cleaning liquid.

  As mentioned above, although one Embodiment of this invention was described, this invention can also be implemented with another form. For example, in the above-described embodiment, the substrate facing interval D is set to the first interval D1 by the elevating drive source 25 as the interval setting means, but the interval setting different from the elevating drive source 25 is set. The substrate facing distance D (D1) may be further finely adjusted by the means. That is, the substrate facing distance D is roughly set in the vicinity of the first distance D1 by the lifting drive source 25, and the substrate facing distance D is precisely set to the first distance D1 by another distance setting means. Good.

This will be described with reference to FIG. In FIG. 6, an elastic force applying mechanism 50 that is provided above the ultrasonic cleaning head 21 and applies an elastic force toward the wafer upper surface Wa to the ultrasonic cleaning head 21, and a nozzle pipe connected to the nozzle N And a cleaning liquid adjusting mechanism 60 for adjusting the supply flow rate and the supply pressure of the cleaning liquid.
The elastic force imparting mechanism 50 includes a cylindrical shaft 51 through which the ultrasonic cleaning head 21 is fixed with a bolt or the like at the lower end and the swing arm 22 is inserted, and the shaft 51 provided in the swing arm 22 in the vertical direction. A pair of bearings 52, 52 that are movably held only on the shaft, and an elastic resin provided around the shaft 51 between the swing arm 22 and the ultrasonic cleaning head 21, for example, Teflon tetrafluoride (poly and a bellows 53 made of a fluororesin such as tetrafluoroethylene).

  In addition, a disc-shaped retaining portion 51a for preventing the shaft 51 from falling downward is formed at the upper end portion of the shaft 51. Further, the bearings 52 and 52 hold the shaft 51 so that the shaft 51 does not rotate around the shaft 51. Further, the bellows 53 acts in the same manner as the compression spring, and exerts an elastic force toward the wafer upper surface Wa in a direction in which the swing arm 22 and the ultrasonic cleaning head 21 are separated from each other, that is, the ultrasonic cleaning head 21. Has been granted.

  The cleaning liquid adjusting mechanism 60 is interposed in the middle of the nozzle pipe NH connected to the nozzle and adjusts the flow rate of the cleaning liquid flowing through the nozzle pipe NH, and in the middle of the nozzle pipe NH. The pressure adjusting valve 62 is arranged to adjust the pressure of the cleaning liquid that is interposed and flows through the nozzle pipe NH. In the cleaning liquid adjusting mechanism 60, both the flow rate adjusting valve 61 and the pressure adjusting valve 62 are not necessarily provided, and at least one of them may be provided.

  According to the interval setting means (the elastic force applying mechanism 50 and the cleaning liquid adjusting mechanism 60) configured as described above, the cleaning liquid is applied to the ultrasonic cleaning head 21 by the elastic force applying mechanism 50 while applying an elastic force toward the wafer upper surface Wa. The flow rate or pressure of the cleaning liquid can be adjusted by the adjusting mechanism 60. Then, by balancing the force to press the ultrasonic cleaning head 21 toward the wafer upper surface Wa and the repulsive force due to the supply flow rate or pressure of the cleaning liquid to the gap space K, the substrate facing distance D (D1) Can be set precisely.

  Furthermore, when the substrate facing distance D (D1) is increased due to an external factor, and an air layer or bubbles try to enter the cleaning liquid in the gap space K, the force from the elastic force applying mechanism 50 acts, and the automatic When the substrate facing distance D (D1) is reduced, and the substrate facing distance D (D1) is decreased, the substrate facing surface WF of the ultrasonic cleaning head 21 attempts to contact the wafer upper surface Wa. The flow rate pressure of the cleaning liquid adjusted by the cleaning liquid adjusting mechanism 60 acts to automatically return to the direction in which the substrate facing distance D (D1) increases. Therefore, in either case, the substrate facing distance D (D1) can be automatically adjusted to the optimum distance.

  Here, the bellows 53 of the elastic force applying mechanism 50 can be replaced with an elastic body such as a coil spring or rubber. Further, for example, air having an appropriate pressure may be supplied to the space KB in the bellows 53 to use the inside of the bellows 53 as a cylinder chamber and apply a force toward the ultrasonic cleaning head 21 toward the wafer upper surface Wa. In this case, the bellows 53 may not have sufficient elastic force, and the air pressure in the space KB in the bellows 53 mainly applies a force to the ultrasonic cleaning head 21.

  In the embodiment described above, the ultrasonic cleaning head 21 is moved along the wafer upper surface Wa by the swing drive source 24 and the swing transmission mechanism 24t during the cleaning process of the wafer W. It is not always necessary to move the ultrasonic cleaning head 21 during the wafer cleaning process. For example, as shown in FIG. 7, when the substrate facing surface WF of the ultrasonic cleaning head 221 is formed to have a size including the center O of the wafer to the outer peripheral portion of the wafer W, the wafer cleaning process is performed. The movement of the ultrasonic cleaning head 221 inside is not particularly necessary.

  In the ultrasonic cleaning head 221 of FIG. 7, a plurality of nozzle tips NS and a plurality of vibration surfaces VF are arranged along the longitudinal direction of the rectangular substrate facing surface WF. In addition, the tip portion NS of each nozzle is arranged on the upstream side of the vibration surface VF with respect to the rotation direction F of the wafer W. With these configurations, it is possible to perform ultrasonic cleaning on the entire area of the wafer upper surface Wa without moving the ultrasonic cleaning head 221 along the wafer upper surface Wa during the cleaning process of the wafer W.

  In this case, since the center O of the wafer is always covered with the substrate facing surface WF and the cleaning liquid is supplied, it does not dry, and therefore it is not necessary to provide the auxiliary liquid supply mechanism 40 in particular. In addition, when the wafer W is loaded or unloaded by the hand H before or after the cleaning process of the wafer W, it is preferable to retract the ultrasonic cleaning head 221 from the wafer W in order to avoid interference with the hand H. . For example, the ultrasonic cleaning head 221 that can rotate the ultrasonic cleaning head 221 around the point OS is used to position the ultrasonic cleaning head at a position shown by a two-dot chain line in FIG. 221 may be moved.

  In the above-described embodiment, the ultrasonic cleaning head 21 is reciprocated (oscillated) so as to draw an arc along the wafer upper surface Wa by the oscillation drive source 24 and the oscillation transmission mechanism 24t. The ultrasonic cleaning head 21 may be moved linearly along the wafer upper surface Wa. For example, instead of the swing transmission mechanism 24t, a ball screw mechanism or the like as described for the elevation transmission mechanism 25t is used, and the ultrasonic cleaning head is moved away from and toward the wafer rotation axis R along the wafer upper surface Wa. 21 may be reciprocated linearly (oscillated).

  Next, in the above-described embodiment, the shape of the tip portion NS of the nozzle provided in the ultrasonic cleaning head 21 is substantially circular, but may be any shape, for example, formed long in a predetermined direction. It may be a slit shape. In particular, in the ultrasonic cleaning head 221 that does not move along the wafer upper surface Wa as shown in FIG. 7, the slit-shaped tip NS formed long in the direction away from the rotation axis R of the wafer is the cleaning liquid. Is effective in that it can be supplied in a wide range.

In the above-described embodiment, the shape of the vibration plate 212 (vibration surface VF) provided in the ultrasonic cleaning head 21 is substantially circular. However, the shape is not limited to this, and may be rectangular or the like. . However, since the ultrasonic vibration from the vibrator 213 is most efficiently applied to the diaphragm 212, the diaphragm 212 is preferably circular.
In the above-described embodiment, the substrate facing surface WF is a flat surface facing the wafer upper surface Wa substantially in parallel. However, the present invention is not limited to this, and the substrate facing surface WF may be a flat surface inclined to the wafer upper surface Wa. Alternatively, it may be a curved surface protruding or recessed with respect to the wafer upper surface Wa. Further, a convex portion or a concave portion may be provided on the surface of the substrate facing surface WF.

In the above-described embodiment, pure water is used as the cleaning liquid. However, any liquid that can clean the substrate may be used, for example, hydrofluoric acid, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, ammonia, or these. A chemical solution such as an aqueous hydrogen peroxide solution may be used.
In the above-described embodiment, the main body 211 and the bellows 53 of the ultrasonic cleaning head 21 are made of fluororesin. However, the material is resistant to the cleaning liquid and has sufficient mechanical strength. Anything is fine. For example, when the cleaning liquid is pure water, a material such as a resin such as vinyl chloride or acrylic, or a metal such as stainless steel or aluminum may be used. Further, when the cleaning liquid is a chemical liquid, a resin such as a fluororesin or vinyl chloride is mainly applied although it varies depending on the type of the chemical liquid.

In the embodiment described above, the wafer rotating mechanism 10 is configured to rotate the wafer W while holding the wafer W by the spin chuck 12 that holds the lower surface Wb of the wafer by suction. Alternatively, a pin holding type spin chuck that rotates about the rotation axis R of the wafer while holding pins at the end face may be used.
Alternatively, the wafer rotation mechanism 10 may be a kind of at least three roller pins that rotate around an axis parallel to the rotation axis R of the wafer while abutting the end face of the peripheral edge of the wafer W. The wafer rotation mechanism 10 using the roller pins is particularly effective when ultrasonic cleaning is performed on both surfaces of the wafer W. If the ultrasonic cleaning head 21 is disposed at a position sandwiching the wafer W, the wafer both surfaces (Wa and Wb). ) Can be satisfactorily ultrasonically cleaned. In this case, the ultrasonic cleaning head 21 for cleaning the wafer lower surface Wb has its substrate facing surface WF facing upward. In such a case, for example, the outer periphery of the substrate facing surface WF is disposed on the substrate facing surface. If it is surrounded by a weir member protruding from the surface WF, a predetermined amount of cleaning liquid is temporarily held inside the weir member on the substrate facing surface WF. For this reason, the cleaning liquid can be easily filled in the gap space K, and sufficient ultrasonic vibration can be applied to the cleaning liquid.

Further, in the above-described embodiment, the case where the wafer W after the CMP process is cleaned has been described. However, the present invention is not limited to this, and the present invention can be widely used for cleaning the wafer W. Can also be applied.
Further, in the above-described embodiment, the case where the semiconductor wafer W is cleaned has been described. However, the present invention is applicable to a glass substrate for a liquid crystal display device, a PDP (plasma display panel) substrate, or a magnetic disk. The present invention can be widely applied to cleaning various other substrates such as glass substrates and ceramic substrates. In addition to the circular substrate of the above-described embodiment, the present invention can also be applied to a square or rectangular square substrate.

  In addition, various design changes can be made within the scope of the matters described in the claims.

It is a perspective view showing simply the composition of the principal part of the substrate cleaning device concerning one embodiment of the present invention. It is sectional drawing seen from the apparatus side which shows simply the structure of the ultrasonic cleaning head of the board | substrate cleaning apparatus which concerns on one Embodiment of this invention. It is a top view which shows the relationship between the wafer and the board | substrate opposing surface of the ultrasonic cleaning head of the ultrasonic cleaning head which concerns on one Embodiment of this invention, a vibration surface, and the front-end | tip part of a nozzle. It is sectional drawing seen from the apparatus side which shows simply the structure of another ultrasonic cleaning head which concerns on this invention. It is a top view which shows the board | substrate opposing surface of another ultrasonic cleaning head concerning this invention, a vibration surface, and the front-end | tip part of a nozzle, and the relationship with a wafer. It is sectional drawing seen from the apparatus side which shows simply the structure of the elastic force provision mechanism and cleaning liquid adjustment mechanism which concern on this invention. It is a top view which shows the relationship between the wafer and the board | substrate opposing surface of another ultrasonic cleaning head which concerns on this invention, a vibration surface, and the front-end | tip part of a nozzle.

Explanation of symbols

10 Wafer rotation mechanism (substrate rotation means)
11 Spin Axis 12 Spin Chuck 20 Ultrasonic Cleaning Mechanism 21 Ultrasonic Cleaning Head (Ultrasonic Cleaning Member)
211 Body 212 Vibration plate 213 Vibrator 214 Ultrasonic oscillator 22 Swing arm 23 Arm shaft 24 Swing drive source (part of moving means)
24t swing transmission mechanism (part of moving means)
25 Lift drive source (part of interval setting means)
25t lift transmission mechanism (part of interval setting means)
30 Brush cleaning mechanism 40 Auxiliary liquid supply mechanism (auxiliary cleaning liquid supply means)
41 Auxiliary liquid supply nozzle 42 Auxiliary liquid piping 43 Cleaning liquid supply source 44 Valve 50 Elastic force application mechanism (applying means, part of interval setting means)
51 Shaft 51a Retaining part 52 Bearing 53 Bellows 60 Cleaning liquid adjusting mechanism (cleaning liquid adjusting means, part of interval setting means)
61 Flow adjustment valve 62 Pressure adjustment valve A1, A2, A3, A4 Path of substrate facing surface D Substrate facing distance D1 First distance D2 Second distance F Wafer rotation direction (substrate rotation direction)
K Gap Space N Nozzle NS Nozzle Tip NH Nozzle Piping NV Valve O Wafer Center R Wafer Rotation Axis (Substrate Rotation Axis)
VF vibrating surface VFa The portion of the vibrating surface closest to the outer periphery of the wafer (at least part of the vibrating surface)
VFb The most downstream portion of the vibration surface with respect to the rotation direction of the wafer (at least a part of the vibration surface)
W Wafer (Substrate)
Wa Wafer upper surface Wb Wafer lower surface WF Substrate facing surface WF1 Position where the substrate facing surface intersects the rotation axis of the wafer (Position where the substrate facing surface intersects the rotation axis of the substrate)
WF2 Wafer outward position WF3 Position where the substrate facing surface intersects the outer periphery of the wafer (position where the substrate facing surface intersects the outer periphery of the substrate)

Claims (12)

Substrate rotating means for rotating the substrate in a predetermined rotation direction about a rotation axis perpendicular to the substrate;
A substrate facing surface provided so as to face the substrate surface rotated by the substrate rotating means, a nozzle having a tip disposed in the substrate facing surface and supplying a cleaning liquid between the substrate and the substrate facing surface; and An ultrasonic cleaning member having a vibration surface provided in the substrate facing surface and imparting ultrasonic vibration to the cleaning liquid supplied between the substrate and the substrate facing surface from the nozzle;
A substrate cleaning apparatus comprising:   The substrate cleaning apparatus according to claim 1, wherein a tip portion of the nozzle is provided in an inner region of the vibration surface.   The substrate cleaning apparatus according to claim 1, wherein a tip portion of the nozzle is provided in an external region of the vibration surface.   4. The substrate cleaning apparatus according to claim 3, wherein the distance from the tip of the nozzle to the rotation axis of the substrate is smaller than the distance from at least a part of the vibration surface to the rotation axis of the substrate.   5. The substrate cleaning apparatus according to claim 3, wherein the tip of the nozzle is disposed upstream of at least a part of the vibration surface in the rotation direction of the substrate.   6. The substrate cleaning apparatus according to claim 1, further comprising interval setting means capable of setting an interval between the substrate facing surface and the substrate surface to a predetermined interval.   The substrate cleaning apparatus according to claim 6, wherein the interval setting means can set the interval between the portions where the substrate and the substrate facing surface are closest to each other to 3 mm or less.   The interval setting unit includes an applying unit that applies a force toward the substrate surface to the ultrasonic cleaning member, and a cleaning liquid adjusting unit that adjusts a flow rate or a pressure of the cleaning liquid supplied from the nozzle. The substrate cleaning apparatus according to claim 6 or 7.   9. The substrate cleaning apparatus according to claim 1, further comprising moving means for moving the ultrasonic cleaning member along the substrate surface rotated by the substrate rotating means.   The moving means moves the ultrasonic cleaning member at least between a position where the substrate facing surface intersects the rotation axis of the substrate and a position where the substrate facing surface intersects the outer periphery of the substrate. The substrate cleaning apparatus according to claim 9.   11. The substrate cleaning apparatus according to claim 9, further comprising auxiliary cleaning liquid supply means that is provided separately from the ultrasonic cleaning member and supplies a cleaning liquid toward a portion near the rotation axis of the substrate surface. A substrate rotation step of rotating the substrate about a rotation axis perpendicular to the substrate;
A cleaning liquid supply step in which a nozzle having a tip portion in the substrate facing surface supplies a cleaning liquid between the substrate surface rotated in the substrate rotating step and the substrate facing surface facing the substrate surface;
For the cleaning liquid supplied in this cleaning liquid supply process, an ultrasonic cleaning process for ultrasonically cleaning the substrate surface by applying an ultrasonic vibration to the vibration surface provided in the substrate facing surface;
A substrate cleaning method comprising:

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