TWI503436B - Magnetron sputtering electrode magnet unit, and sputtering device - Google Patents

Magnetron sputtering electrode magnet unit, and sputtering device Download PDF

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Publication number
TWI503436B
TWI503436B TW099141723A TW99141723A TWI503436B TW I503436 B TWI503436 B TW I503436B TW 099141723 A TW099141723 A TW 099141723A TW 99141723 A TW99141723 A TW 99141723A TW I503436 B TWI503436 B TW I503436B
Authority
TW
Taiwan
Prior art keywords
magnet
target
sputtering
peripheral
central
Prior art date
Application number
TW099141723A
Other languages
English (en)
Chinese (zh)
Other versions
TW201131004A (en
Inventor
Tatsunori Isobe
Takaomi Kurata
Makoto Arai
Junya Kiyota
Yoshikatsu Sato
Shigemitsu Satou
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW201131004A publication Critical patent/TW201131004A/zh
Application granted granted Critical
Publication of TWI503436B publication Critical patent/TWI503436B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099141723A 2009-12-09 2010-12-01 Magnetron sputtering electrode magnet unit, and sputtering device TWI503436B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009279766A JP5386329B2 (ja) 2009-12-09 2009-12-09 マグネトロンスパッタ電極用の磁石ユニット及びスパッタリング装置

Publications (2)

Publication Number Publication Date
TW201131004A TW201131004A (en) 2011-09-16
TWI503436B true TWI503436B (zh) 2015-10-11

Family

ID=44130307

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099141723A TWI503436B (zh) 2009-12-09 2010-12-01 Magnetron sputtering electrode magnet unit, and sputtering device

Country Status (4)

Country Link
JP (1) JP5386329B2 (ko)
KR (2) KR101944975B1 (ko)
CN (1) CN102097270B (ko)
TW (1) TWI503436B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101608603B1 (ko) * 2011-06-30 2016-04-01 캐논 아네르바 가부시키가이샤 스퍼터 장치
CN106399958B (zh) * 2016-05-27 2019-01-22 中国电子科技集团公司第四十八研究所 一种用于金属镀膜的矩形磁控溅射靶
KR20210016189A (ko) * 2019-08-01 2021-02-15 삼성디스플레이 주식회사 스퍼터링 장치 및 그것을 이용한 스퍼터링 방법
KR102340351B1 (ko) * 2021-05-26 2021-12-16 고영효 마그네트론 스퍼터링 장치의 자기회로 및 그 제조 방법

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06228749A (ja) * 1992-12-23 1994-08-16 Balzers Ag プラズマ発生装置
JPH10121236A (ja) * 1996-10-16 1998-05-12 Matsushita Electric Ind Co Ltd マグネトロンスパッタ方法、マグネトロンスパッタ装置及びそれに使用するマグネットユニット
JP2001040476A (ja) * 1999-07-27 2001-02-13 Tokin Corp スパッタリング装置用磁気回路
TW573039B (en) * 1999-06-24 2004-01-21 Ulvac Corp Sputtering device
TWI229142B (en) * 2000-12-25 2005-03-11 Shinetsu Chemical Co Magnetron sputtering system and photomask blank production method based on the same
TW200730657A (en) * 2005-12-08 2007-08-16 Ulvac Inc Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode
TW200732492A (en) * 2006-02-01 2007-09-01 Shinmaywa Ind Ltd Magnet structure for magnetron sputtering apparatus, cathode electrode unit, magnetron sputtering apparatus and method for using magnet structure
JP2008121077A (ja) * 2006-11-14 2008-05-29 Hitachi Metals Ltd マグネトロンスパッタリング用磁気回路
TW200946705A (en) * 2008-03-17 2009-11-16 Ulvac Inc Magnetron sputtering apparatus and magnetron sputtering method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10102247A (ja) * 1996-10-02 1998-04-21 Matsushita Electric Ind Co Ltd スパッタリング装置及び方法
JP3585760B2 (ja) * 1999-01-27 2004-11-04 シャープ株式会社 マグネトロンスパッタ装置
JP5049561B2 (ja) * 2006-11-17 2012-10-17 株式会社アルバック マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置
KR20090079175A (ko) * 2008-01-16 2009-07-21 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 코팅 장치

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06228749A (ja) * 1992-12-23 1994-08-16 Balzers Ag プラズマ発生装置
JPH10121236A (ja) * 1996-10-16 1998-05-12 Matsushita Electric Ind Co Ltd マグネトロンスパッタ方法、マグネトロンスパッタ装置及びそれに使用するマグネットユニット
TW573039B (en) * 1999-06-24 2004-01-21 Ulvac Corp Sputtering device
JP2001040476A (ja) * 1999-07-27 2001-02-13 Tokin Corp スパッタリング装置用磁気回路
TWI229142B (en) * 2000-12-25 2005-03-11 Shinetsu Chemical Co Magnetron sputtering system and photomask blank production method based on the same
TW200730657A (en) * 2005-12-08 2007-08-16 Ulvac Inc Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode
TW200732492A (en) * 2006-02-01 2007-09-01 Shinmaywa Ind Ltd Magnet structure for magnetron sputtering apparatus, cathode electrode unit, magnetron sputtering apparatus and method for using magnet structure
JP2008121077A (ja) * 2006-11-14 2008-05-29 Hitachi Metals Ltd マグネトロンスパッタリング用磁気回路
TW200946705A (en) * 2008-03-17 2009-11-16 Ulvac Inc Magnetron sputtering apparatus and magnetron sputtering method

Also Published As

Publication number Publication date
KR20110065353A (ko) 2011-06-15
CN102097270A (zh) 2011-06-15
TW201131004A (en) 2011-09-16
KR101944975B1 (ko) 2019-02-01
JP2011122195A (ja) 2011-06-23
JP5386329B2 (ja) 2014-01-15
CN102097270B (zh) 2015-05-20
KR20170064527A (ko) 2017-06-09

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