TWI503436B - Magnetron sputtering electrode magnet unit, and sputtering device - Google Patents
Magnetron sputtering electrode magnet unit, and sputtering device Download PDFInfo
- Publication number
- TWI503436B TWI503436B TW099141723A TW99141723A TWI503436B TW I503436 B TWI503436 B TW I503436B TW 099141723 A TW099141723 A TW 099141723A TW 99141723 A TW99141723 A TW 99141723A TW I503436 B TWI503436 B TW I503436B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnet
- target
- sputtering
- peripheral
- central
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009279766A JP5386329B2 (ja) | 2009-12-09 | 2009-12-09 | マグネトロンスパッタ電極用の磁石ユニット及びスパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201131004A TW201131004A (en) | 2011-09-16 |
TWI503436B true TWI503436B (zh) | 2015-10-11 |
Family
ID=44130307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099141723A TWI503436B (zh) | 2009-12-09 | 2010-12-01 | Magnetron sputtering electrode magnet unit, and sputtering device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5386329B2 (ko) |
KR (2) | KR101944975B1 (ko) |
CN (1) | CN102097270B (ko) |
TW (1) | TWI503436B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101608603B1 (ko) * | 2011-06-30 | 2016-04-01 | 캐논 아네르바 가부시키가이샤 | 스퍼터 장치 |
CN106399958B (zh) * | 2016-05-27 | 2019-01-22 | 中国电子科技集团公司第四十八研究所 | 一种用于金属镀膜的矩形磁控溅射靶 |
KR20210016189A (ko) * | 2019-08-01 | 2021-02-15 | 삼성디스플레이 주식회사 | 스퍼터링 장치 및 그것을 이용한 스퍼터링 방법 |
KR102340351B1 (ko) * | 2021-05-26 | 2021-12-16 | 고영효 | 마그네트론 스퍼터링 장치의 자기회로 및 그 제조 방법 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06228749A (ja) * | 1992-12-23 | 1994-08-16 | Balzers Ag | プラズマ発生装置 |
JPH10121236A (ja) * | 1996-10-16 | 1998-05-12 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ方法、マグネトロンスパッタ装置及びそれに使用するマグネットユニット |
JP2001040476A (ja) * | 1999-07-27 | 2001-02-13 | Tokin Corp | スパッタリング装置用磁気回路 |
TW573039B (en) * | 1999-06-24 | 2004-01-21 | Ulvac Corp | Sputtering device |
TWI229142B (en) * | 2000-12-25 | 2005-03-11 | Shinetsu Chemical Co | Magnetron sputtering system and photomask blank production method based on the same |
TW200730657A (en) * | 2005-12-08 | 2007-08-16 | Ulvac Inc | Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode |
TW200732492A (en) * | 2006-02-01 | 2007-09-01 | Shinmaywa Ind Ltd | Magnet structure for magnetron sputtering apparatus, cathode electrode unit, magnetron sputtering apparatus and method for using magnet structure |
JP2008121077A (ja) * | 2006-11-14 | 2008-05-29 | Hitachi Metals Ltd | マグネトロンスパッタリング用磁気回路 |
TW200946705A (en) * | 2008-03-17 | 2009-11-16 | Ulvac Inc | Magnetron sputtering apparatus and magnetron sputtering method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10102247A (ja) * | 1996-10-02 | 1998-04-21 | Matsushita Electric Ind Co Ltd | スパッタリング装置及び方法 |
JP3585760B2 (ja) * | 1999-01-27 | 2004-11-04 | シャープ株式会社 | マグネトロンスパッタ装置 |
JP5049561B2 (ja) * | 2006-11-17 | 2012-10-17 | 株式会社アルバック | マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置 |
KR20090079175A (ko) * | 2008-01-16 | 2009-07-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 스퍼터 코팅 장치 |
-
2009
- 2009-12-09 JP JP2009279766A patent/JP5386329B2/ja active Active
-
2010
- 2010-12-01 TW TW099141723A patent/TWI503436B/zh active
- 2010-12-02 KR KR1020100122158A patent/KR101944975B1/ko active IP Right Grant
- 2010-12-09 CN CN201010580566.8A patent/CN102097270B/zh active Active
-
2017
- 2017-06-01 KR KR1020170068290A patent/KR20170064527A/ko not_active Application Discontinuation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06228749A (ja) * | 1992-12-23 | 1994-08-16 | Balzers Ag | プラズマ発生装置 |
JPH10121236A (ja) * | 1996-10-16 | 1998-05-12 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ方法、マグネトロンスパッタ装置及びそれに使用するマグネットユニット |
TW573039B (en) * | 1999-06-24 | 2004-01-21 | Ulvac Corp | Sputtering device |
JP2001040476A (ja) * | 1999-07-27 | 2001-02-13 | Tokin Corp | スパッタリング装置用磁気回路 |
TWI229142B (en) * | 2000-12-25 | 2005-03-11 | Shinetsu Chemical Co | Magnetron sputtering system and photomask blank production method based on the same |
TW200730657A (en) * | 2005-12-08 | 2007-08-16 | Ulvac Inc | Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode |
TW200732492A (en) * | 2006-02-01 | 2007-09-01 | Shinmaywa Ind Ltd | Magnet structure for magnetron sputtering apparatus, cathode electrode unit, magnetron sputtering apparatus and method for using magnet structure |
JP2008121077A (ja) * | 2006-11-14 | 2008-05-29 | Hitachi Metals Ltd | マグネトロンスパッタリング用磁気回路 |
TW200946705A (en) * | 2008-03-17 | 2009-11-16 | Ulvac Inc | Magnetron sputtering apparatus and magnetron sputtering method |
Also Published As
Publication number | Publication date |
---|---|
KR20110065353A (ko) | 2011-06-15 |
CN102097270A (zh) | 2011-06-15 |
TW201131004A (en) | 2011-09-16 |
KR101944975B1 (ko) | 2019-02-01 |
JP2011122195A (ja) | 2011-06-23 |
JP5386329B2 (ja) | 2014-01-15 |
CN102097270B (zh) | 2015-05-20 |
KR20170064527A (ko) | 2017-06-09 |
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