TWI502646B - 鈷金屬障壁層 - Google Patents

鈷金屬障壁層 Download PDF

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TWI502646B
TWI502646B TW100146809A TW100146809A TWI502646B TW I502646 B TWI502646 B TW I502646B TW 100146809 A TW100146809 A TW 100146809A TW 100146809 A TW100146809 A TW 100146809A TW I502646 B TWI502646 B TW I502646B
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layer
recess
metal
copper
metal layer
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Rohan Akolkar
James S Clarke
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Intel Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Microelectronics & Electronic Packaging (AREA)
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Description

鈷金屬障壁層 交互參考相關申請案
本申請案係大致上有關2010年9月24日提出的美國申請案第12/890,462號、標題為“障壁層”。
本發明之實施例大致上有關半導體處理、積體電路、用於金屬互連結構之障壁層、低k介電體、及於半導體處理應用中之沈積期間的間隙充填。
對於愈來愈小的積體電路(IC)之渴望將龐大的性能要求放在被使用來製成IC裝置的材料上。大致上，積體電路晶片亦已知為微晶片、矽晶片、或晶片。IC晶片被發現在各種之常見裝置中，諸如電腦、汽車、電視、CD播放器、及行動電話中之微處理器。複數IC晶片典型被建立在矽晶圓(薄矽盤片，具有譬如300毫米之直徑)上，且在處理之後，該晶圓被切成小方塊，以分開地建立個別之晶片。具有圍繞大約90奈米的最小線寬之1平方公分的IC晶片能包括數億個零組件。當前技術正推動最小線寬甚至比45奈米較小。
一種裝置，包括： 基板，在該基板之表面上具有介電材料層，該介電材料具有一形成在其中之凹部，其中該凹部具有至少一側面，且該凹部之該側面係與金屬層接觸，其中該金屬層之金屬係選自包含釕、鉑、銥、鈀、錸、及銠的群組，其中該金屬層額外地包括鈷，其中該凹部係以銅充填，且其中該金屬層係在該銅及該介電材料之間。
積體電路(IC)晶片中的電子裝置(例如電晶體)間之電子連接目前典型係使用銅金屬或銅金屬之合金所建立。IC晶片中之裝置不只能被放置越過該IC晶片之表面，同時裝置亦能以複數層被堆疊在該IC晶片上。組成該IC晶片的電子裝置間之電互連係使用被以導電材料充填的引洞及通道製成。絕緣材料、時常為低k介電材料之(諸)層分開該IC晶片中之各種零組件及裝置。
在其上製成該IC電路晶片之裝置的基板，譬如為矽晶圓或絕緣體上的矽基板。矽晶圓為典型被使用於該半導體處理工業的基板，雖然本發明之實施例係未依賴所使用之基板的型式。該基板亦可包括鍺、銻化銦、碲化鉛、砷化銦、磷化銦、砷化鎵、銻化鎵、及或其他單獨或與矽或二氧化矽或其他絕緣材料結合的III-V族材料。組成該IC晶片之裝置被建立在該基板表面上。
至少一介電層被沈積在該基板上。介電材料包含、但不被限制於二氧化矽(SiO2 )、低k介電體、氮化矽、及或 氮氧化矽。該介電層選擇性地包含孔隙或其他空隙，以進一步減少其介電常數。典型地，低k薄膜被考慮為有著比SiO2 之介電常數較小的介電常數之任何薄膜，該SiO2 具有大約4.0的介電常數。具有大約3至大約2.7的介電常數之低k薄膜為目前半導體製造製程之典型材料。積體電路裝置結構之生產通常亦包含將二氧化矽(SiO2 )薄膜或層、或敷蓋層放在低k(低介電常數)ILD(層間介電)薄膜之表面上。低k薄膜可為譬如硼、含磷的、或摻雜碳之矽氧化物。摻雜碳之矽氧化物亦可被稱為摻雜碳之氧化物(CDO)及有機矽酸鹽玻璃(OSG)。
為形成電互連結構，介電層被佈圖，以建立一或更多通道及或引洞，而金屬互連結構被形成在該等通道及或引洞內。通道及引洞等詞在此中被使用，因為這些係一般與被使用來形成金屬互連結構的特徵結構有關之名詞。大致上，被使用於形成金屬互連的特徵結構係一具有任何形狀而形成在一基板中或沈積在該基板上之層的凹部。該特徵結構係以導電互連材料充填。該等通道及或引洞可使用傳統濕式或乾式蝕刻半導體處理技術被佈圖(建立)。介電材料被使用於電隔絕金屬互連結構與該等周圍之零組件。障壁層被使用在該等金屬互連結構及該等介電材料之間，以防止金屬(諸如銅)遷移進入該等周圍之材料。裝置故障能譬如發生於銅金屬係與介電材料接觸之狀態中，因為該銅金屬能夠離子化及貫穿進入該介電材料。被放置於介電材料、矽、及或其他材料間之障壁層及該銅互連結構亦可具 有增進銅至該其他材料之黏附力的作用。脫層(由於材料間之不佳的黏著性)亦係在IC晶片的製造中所遭遇的一項困難，其導致裝置故障。
本發明之實施例提供在銅結構及介電層之間用作障壁的材料層。有利地係，本發明之實施例譬如提供比傳統障壁材料、諸如鉭(Ta)、TaN、鈦(Ti)、TiN、及WN呈現較低電阻率的材料層。本發明的實施例譬如不需要傳統障壁層諸如TaN、TiN、及WN之使用。額外有利地係，本發明之實施例能夠於銅沈積進入引洞及或通道期間使用較薄及或不連續之銅晶種層，當作最小線寬的引洞及或通道被按一定比例製作至較小尺寸，能夠使該等引洞及或通道中有完全之間隙充填。間隙充填在高縱橫比特徵結構中特別是一項問題。
圖1提供一具有能夠用作障壁層之材料層的電互連結構。在圖1中，用於積體電路晶片之金屬引洞105(或通道)係藉由障壁層110與該裝置之其他零組件分開，該障壁層110與該引洞105(或通道)之底部與側面排成行列。於此實施例中，該障壁層110在介電層115及該金屬引洞105之間提供一障壁。該介電層115可為譬如時常被稱為層間介電層(ILD)者。另外，於此實施例中，該裝置額外地以源自用於裝置製造的製程之蝕刻停止層120為其特色。蝕刻停止層可譬如為由諸如氮化矽、氮氧化矽、及或碳化矽之介電材料所形成。選擇性地，圖1之金屬互連結構係與額外之金屬互連結構116(引洞)電連通。被使用於互 連結構之金屬係譬如銅、鋁(Al)、金(Au)、銀(Ag)、及或其合金。在本發明的一些實施例中，被使用於互連結構之金屬為銅或該金屬為銅之合金。
於圖1中，該障壁層110包括已用第二材料被修改之薄釕(Ru)層，該第二材料已經與該釕層及或該介電材料之表面互相作用，該介電材料之表面係與該釕層接觸。薄釕層典型包括結晶區塊及由於該晶粒邊界而不會對銅遷移建立一適當之障壁。該釕層及或藉由該第二材料與該釕層接觸的介電材料之轉換建立一阻斷銅遷移的障壁層110。該第二材料係譬如鈷(Co)。該釕層具有於1奈米及4奈米間之平均厚度。該第二材料係以於該釕的百分之1及20原子量之間的數量存在於該障壁層中。
於額外之實施例中，該自己形成的障壁層110係鉑(Pt)、銥(Ir)、鈀(Pd)、錸(Re)、或銠(Rh)之薄金屬層，其係以第二材料被修改。該第二材料已與該第一薄材料(鉑、銥、鈀、錸、或銠)層及或該鄰近的介電體互相作用，以對銅遷移形成一障壁。該第二材料係鈷。該第二材料係能夠充填該薄金屬層之晶粒邊界及或在遷移之後經由該薄金屬層與該ILD互相作用，以譬如形成一障壁。熱退火製程能有利於該第二材料之流動性及或反應性。該薄金屬層具有在1奈米及4奈米間之平均厚度。該第二材料係以於該第一材料的百分之1及20原子量之間的數量存在於該障壁層中。
於本發明之實施例中，該第二材料(Co)係不須均勻地 分佈在該薄金屬層內。譬如，鈷可優先地經由該金屬層移入，且累積在該通道或引洞之側面的表面上(例如在該介電材料之表面上，該通道或引洞係形成在該介電材料中)。
於本發明之實施例中，較佳是沒有鉭(Ta)或TaN黏附層係與該自己形成的障壁層一起使用。如與不具有鉭、TaN、鈦、TiN、或WN黏附(襯裡)層之互連結構作比較，鉭、TaN、鈦、TiN、或WN黏附(襯裡)層之使用增加金屬互連結構之阻抗。另外，如在此中所討論，於該互連結構之形成期間，其係可能使用一不會連續地覆蓋該在下方的金屬層之銅晶種層。用於該銅晶種層含蓋範圍之不嚴格的需求允許使用諸如電沈積(電鍍)之金屬充填技術以形成較小的特徵結構及具有較高縱橫比的特徵結構。
圖2A-E顯示一用於建立金屬互連結構用之障壁層的製程。於圖2A中，待以導電材料充填以建立電互連結構的間隙結構205(例如引洞或通道或凹部)被提供於基板210中。該間隙205典型為在後端金屬化製程期間被充填的引洞型式，其中半導體裝置(例如電晶體)係於積體電路晶片中互連。該間隙結構譬如被蝕刻進入包括介電材料的ILD層215。該介電材料係譬如二氧化矽、低k介電體、及或其他介電材料。於圖2中，層220係於裝置製造期間所建立之蝕刻停止層。金屬結構225係一電裝置互連結構，且包括譬如導電金屬、諸如銅金屬及銅金屬之合金、鎢金屬或鎢金屬之合金。薄金屬層230係譬如藉由原子層沈 積(ALD)、化學蒸氣沈積(CVD)、或物理蒸氣沈積(PVD)所沈積，且獲得圖2B之結構。該薄金屬層230包括釕、鉑、銥、鈀、錸、或銠。於本發明之實施例中，該金屬層230係釕。含有銅及鈷摻雜劑之銅晶種層235係沈積至圖2B之結構上，且獲得圖2C之結構。該摻雜劑係以該晶種層的1-20原子百分比(at.%)之數量存在於該銅晶種層235中。該晶種層係譬如藉由PVD、CVD、電沈積、或ALD所沈積。選擇性地，該晶種層係一薄的不連續層。圖2C顯示不連續之銅晶種層235。於圖2C之實施例中，該銅晶種層235不會完全地覆蓋該金屬層230。該銅互連材料(或其他導電材料)240接著被電沈積，且該結構被退火，並提供圖2D之裝置。退火係譬如藉由將該結構加熱至攝氏350-400度達二小時之久所完成。用於退火之其他溫度及時期係亦可能的。在退火之後，對於銅遷移，該障壁層231係不能滲透的。進入及或穿過該金屬層230之鈷摻雜劑遷移對銅擴散形成一障壁。該摻雜劑之行為局部地視被選擇用於該金屬層230之金屬及該銅晶種層235中之摻雜劑而定。於一些案例中，該摻雜劑橫越該金屬層230及與該介電層215互相作用，以形成一障壁層231。於其他案例中，該摻雜劑進入該金屬層230，或兩機構之結合發生。
化學機械拋光將該銅互連結構240之頂部平面化至該介電層215的頂部，而形成圖2E之結構。進一步之互連層(未示出)譬如接著被建立於圖2E之結構上，以形成一 已完成的IC裝置。
於圖2A-E之實施例中，不連續之晶種層被顯示。該晶種層可為連續或不連續的。
圖3敘述一用於形成後端金屬化用之障壁層、例如形成用於積體電路晶片用之電晶體裝置用的銅互連結構之製程。於圖3中，提供將被以導電金屬充填以形成一電導電互連結構的通道或引洞。該通道或引洞係典型經由該半導體工業中所使用的蝕刻製程被形成在介電層、諸如ILD層中之凹部。該通道或引洞之壁面及底部(該凹部的側面)被塗以包括釕、鉑、銥、鈀、錸、或銠的薄金屬層。在本發明之實施例中，該薄金屬層包括釕，且該銅晶種層中之摻雜劑係鈷。該薄金屬層係例如藉由ALD、CVD、或PVD所沈積。包括鈷之銅晶種層接著被沈積。該銅晶種層係譬如藉由ALD、PVD、電沈積、或CVD所沈積。有利地係，該銅晶種層可為連續或不連續的。於小的特徵結構將以金屬充填之狀態中，該不連續之銅晶種層允許較薄的晶種層被沈積及潛在地避免掐掉特徵結構。如果一特徵結構變得被掐掉，則該互連結構的金屬中之不想要的間隙能形成及能導致裝置故障。在本發明之實施例中，該銅晶種層具有3至10奈米之平均厚度。該通道或引洞係接著經由電沈積法製程(電化學電鍍)以金屬充填。退火該結構提供一具有障壁層之電互連結構，該障壁層防止金屬互連材料之遷移進入周圍材料。典型地，進一步的處理包含化學機械拋光，其平面化該互連結構及該層間介電材料，以致兩者 本質上具有同等高度。
該晶種層中之鈷摻雜劑能經由該金屬互連之銅移入或擴散，且在該銅至蝕刻停止介面分離。該摻雜劑在此介面之分離導致該銅及蝕刻停止層間之改善的黏附作用。此改善的黏附作用造成該互連結構對於電遷移更具阻抗，且藉此可改善裝置可靠性。
大致上，電沈積製程包括由電解溶液將金屬沈積至半導體基板上，該電解溶液包括待沈積金屬之離子。負的偏壓被放置在該基板上。該電解溶液可被稱為鍍浴或電鍍槽。該金屬之正離子被吸引至該負偏壓基板。該負偏壓基板減少該等離子，且該金屬沈積至該基板上。
熟諳該相關技術之人們了解遍及該揭示內容及用於所顯示及敘述之各種零組件的組合及替代，該等修改及變化係可能的。遍及此說明書參考“一實施例”或“實施例”意指關於該實施例所敘述之特別的特色、結構、材料、或特徵被包含於本發明之至少一實施例中，但不須指出它們係存在於每一實施例中。再者，該等特別之特色、結構、材料、或特徵能以任何合適之方式被組合於一或多個實施例中。各種額外之層及或結構可被包含及或所敘述之特色可於其他實施例中被省略。
105‧‧‧引洞
110‧‧‧障壁層
115‧‧‧介電層
116‧‧‧互連結構
120‧‧‧蝕刻停止層
205‧‧‧間隙
210‧‧‧基板
215‧‧‧層間介電層
220‧‧‧層
225‧‧‧金屬結構
230‧‧‧金屬層
231‧‧‧障壁層
235‧‧‧晶種層
240‧‧‧互連結構
圖1顯示用於積體電路晶片的互連結構，而在該金屬互連部及組成該積體電路晶片的其他成份(例如介電材料) 之間具有障壁層。
圖2A-E示範一製程，用以形成一有用於積體電路晶片用之金屬互連結構的障壁層。
圖3敘述一製程，用於形成一有用於積體電路晶片用之金屬互連結構的障壁層。
205‧‧‧間隙
210‧‧‧基板
215‧‧‧層間介電層
220‧‧‧層
225‧‧‧金屬結構
230‧‧‧金屬層
235‧‧‧晶種層
240‧‧‧互連結構

Claims (15)

  1. 一種電子裝置，包括：基板，在該基板之表面上具有介電材料層，該介電材料具有一形成在其中之凹部，其中該凹部具有至少一側面，且該凹部之該側面係與金屬層接觸，其中該金屬層之金屬係選自包含釕、鉑、銥、鈀、錸、及銠的群組，其中該金屬層額外地包括鈷，其中該凹部係以銅充填，其中該金屬層係在該銅及該介電材料之間，且其中該電子裝置被退火，以促進該鈷的流動性和/或反應性。
  2. 如申請專利範圍第1項之裝置，其中鈷係以該金屬之由1至20原子量百分比的數量存在於該金屬層中。
  3. 如申請專利範圍第1項之裝置，其中該凹部不包括含有鈦、組、或鎢之層。
  4. 如申請專利範圍第1項之裝置，其中該金屬層為釕。
  5. 如申請專利範圍第1項之裝置，其中該金屬層之厚度係於1奈米及4奈米之間。
  6. 如申請專利範圍第1項之裝置，其中該凹部為通道或引洞。
  7. 如申請專利範圍第1項之裝置，其中該鈷係不均勻地分佈遍及該金屬層。
  8. 一種用於製造電子裝置的方法，該方法包括：提供具有一表面之基板，該表面具有一於該基板表面中之凹部，其中該凹部具有至少一表面， 將金屬層沈積在該凹部之至少一表面上，該金屬層之金屬係選自包含釕、鉑、銥、鈀、錸、及銠的群組，將銅晶種層沈積在該金屬層上，其中該銅晶種層包括鈷摻雜劑，及將銅沈積進入該凹部，其中退火製程發生在銅晶種層沈積之後、或在該銅互連層的沈積之後，以促進該鈷摻雜劑的流動性和/或反應性。
  9. 如申請專利範圍第8項之方法，其中該基板表面包括介電材料，且該凹部被形成在該介電材料中。
  10. 如申請專利範圍第8項之方法，其中該銅晶種層係不連續之層。
  11. 如申請專利範圍第1項之方法，其中該鈷摻雜劑係以由1至20原子量百分比的數量存在於該銅晶種層中。
  12. 如申請專利範圍第8項之方法，其中該銅係藉由電沈積法沈積進入該凹部。
  13. 如申請專利範圍第1項之方法，其中該金屬層為釕。
  14. 如申請專利範圍第8項之方法，其中源自申請專利範圍第1項之方法的以銅充填之凹部不具有包括鈦、鉭、或鎢之層。
  15. 如申請專利範圍第8項之方法，其中該凹部為通道或引洞。
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