TWI501368B - 凸塊製造裝置及製造方法 - Google Patents

凸塊製造裝置及製造方法 Download PDF

Info

Publication number
TWI501368B
TWI501368B TW101143377A TW101143377A TWI501368B TW I501368 B TWI501368 B TW I501368B TW 101143377 A TW101143377 A TW 101143377A TW 101143377 A TW101143377 A TW 101143377A TW I501368 B TWI501368 B TW I501368B
Authority
TW
Taiwan
Prior art keywords
bonding wire
wire
bonding
notch
bump
Prior art date
Application number
TW101143377A
Other languages
English (en)
Other versions
TW201327751A (zh
Inventor
Chien Ling Hwang
Yeong Jyh Lin
Yi Li Hsiao
Ming Da Cheng
Tsai Tsung Tsai
Chung Shi Liu
Mirng Ji Lii
Chen Hua Yu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201327751A publication Critical patent/TW201327751A/zh
Application granted granted Critical
Publication of TWI501368B publication Critical patent/TWI501368B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/111Manufacture and pre-treatment of the bump connector preform
    • H01L2224/1111Shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13005Structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13164Palladium [Pd] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13169Platinum [Pt] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7855Mechanical means, e.g. for severing, pressing, stamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/786Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621Holding means, e.g. wire clampers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/85051Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00012Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/206Length ranges
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49174Assembling terminal to elongated conductor
    • Y10T29/49181Assembling terminal to elongated conductor by deforming
    • Y10T29/49185Assembling terminal to elongated conductor by deforming of terminal
    • Y10T29/49192Assembling terminal to elongated conductor by deforming of terminal with insulation removal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49204Contact or terminal manufacturing
    • Y10T29/49208Contact or terminal manufacturing by assembling plural parts
    • Y10T29/4921Contact or terminal manufacturing by assembling plural parts with bonding
    • Y10T29/49211Contact or terminal manufacturing by assembling plural parts with bonding of fused material
    • Y10T29/49213Metal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/51Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5136Separate tool stations for selective or successive operation on work
    • Y10T29/5137Separate tool stations for selective or successive operation on work including assembling or disassembling station
    • Y10T29/5139Separate tool stations for selective or successive operation on work including assembling or disassembling station and means to sever work prior to disassembling
    • Y10T29/514Separate tool stations for selective or successive operation on work including assembling or disassembling station and means to sever work prior to disassembling comprising means to strip insulation from wire
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/51Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5176Plural diverse manufacturing apparatus including means for metal shaping or assembling including machining means
    • Y10T29/5177Plural diverse manufacturing apparatus including means for metal shaping or assembling including machining means and work-holder for assembly
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/53Means to assemble or disassemble
    • Y10T29/5313Means to assemble electrical device
    • Y10T29/532Conductor
    • Y10T29/53209Terminal or connector
    • Y10T29/53213Assembled to wire-type conductor
    • Y10T29/53217Means to simultaneously assemble multiple, independent conductors to terminal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/53Means to assemble or disassemble
    • Y10T29/5313Means to assemble electrical device
    • Y10T29/532Conductor
    • Y10T29/53209Terminal or connector
    • Y10T29/53213Assembled to wire-type conductor
    • Y10T29/53235Means to fasten by deformation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Description

凸塊製造裝置及製造方法
本發明係有關於一種凸塊製造裝置,特別是有關於一種間柱凸塊製造裝置及製造方法。
隨著積體電路裝置密度增加,也增加了改良封裝結構的需求。例如,當積體電路裝置密度增加,也增加了個別的連接器(例如接合墊、銅凸塊、焊線、焊點及類似的部件)的密度。裝置密度增加導致對接合製程的要求更嚴格,在不犧牲含焊料接合墊的品質的情況下,需要縮小焊錫凸塊的尺寸。
本發明係提供一種凸塊製造裝置,包括用以提供焊線的捲盤、用以在焊線內形成缺口的切割裝置以及用以接合焊線而形成間柱凸塊的焊針。其中凸塊製造裝置將焊線從缺口拉斷,使得焊線的尾端區貼附於間柱凸塊。
本發明係提供另一種凸塊製造裝置,包括用以提供焊線的捲盤、用以接合焊線而形成間柱凸塊的焊針、設置於捲盤與焊針之間的夾鉗,其中夾鉗與焊針同步上下移動;以及貼附於夾鉗的切割裝置,其中透過夾鉗夾住焊線而使切割裝置在焊線內形成缺口。
本發明係提供一種凸塊製造方法,包括在焊線內形成缺口。將焊線接合至電性連接器,且在電性連接器上形成 間柱凸塊,以及將焊線從缺口拉斷而與間柱凸塊分開。
以下說明本發明實施例之製作與使用。然而,可輕易了解本發明實施例提供許多合適的發明概念而可實施於廣泛的各種特定背景。所揭示的特定實施例僅僅用於說明以特定方法製作及使用本發明,並非用以侷限本發明的範圍。
配合本發明各種實施例,提供焊線接合製程的高間柱凸塊的製造裝置及其製造方法,亦說明形成高間柱凸塊的中間階段,並討論各種實施例的差異與操作。圖式及說明中使用相同的標號來表示相同或相似的部件。高間柱凸塊(有時稱為凸塊)對於各種的封裝製程提供更有效率的整合。
第1圖係繪示出本發明實施例之間柱凸塊2,具有凸塊區6及尾端區8,在電性連接器4上形成間柱凸塊2。電性連接器4可為接合墊、金屬線、另一間柱凸塊或類似的部件,更可為位於積體電路元件(未繪示,可為裝置晶片、封裝基板、轉接板(interposer)或類似的元件)表面的表面特徵部件。凸塊區6具有一高度BH,而尾端區8具有一高度TH,且間柱凸塊2具有全部高度OH。尾端區8為直立的。在某些實施例中,尾端區8的高度TH可大約為15微米至30微米的範圍。在其他實施例中,尾端區8的高度TH可大約為30微米至100微米的範圍。又在其他實施例中,尾端區8的高度TH可大於100微米,上限至接近重力傾斜的長度(即,尾端區8無法再自我支撐對抗重力拉力的臨界 點,其高度取決於尾端區8的直徑而變動)。在某些實施例中,高度OH可大約大於200微米或300微米。在本實施例中,間柱凸塊2可由銅或金所構成,不過其他導電材料(例如鋁、銀、鉑、鈀、錫及類似的材料)也在本實施例的考慮範圍內。
第2A、2B及2C圖係繪示出根據本發明某些實施例之形成間柱凸塊2(繪示於第1圖)的製造方法。間柱凸塊2可由焊線10(例如銅或金焊線)形成。在第2A圖的實施例中,在接觸到只有間柱凸塊2形成於其上的電性連接器4(請參照第1圖)之前,焊線10在捲盤12之間通過。當焊線10通過捲盤12之間,也經過刻缺口裝置14。第2B圖更詳細繪示刻缺口裝置14,如圖所示,其包括焊線10通過其之間的兩滾輪15。滾輪15其中之一者或是兩者皆於其中形成一腔室(cavity)(請參照第2B圖),腔室內包括刀片或其他切割裝置17,其切割但不切斷焊線10,因此在焊線10內形成缺口11(繪示於第2C圖)。隨著滾輪15每一次的旋轉,切割裝置17接觸焊線10並對其刻出缺口。雖然第2B圖僅繪示出一個切割裝置17,但可在滾輪15其中之一者或是兩者上形成超過一個以上的切割裝置,以縮小在焊線10內的缺口11的間距P1。任何所屬技術領域中具有通常知識者可以認知的是滾輪15的直徑之間的關係、切割裝置17(若超過一個以上)之間的間隔及在焊線10內得到的缺口11(繪示於第2C圖)的間距P1。第2C圖更詳細繪示通過滾輪15之間且刻出缺口後的焊線10。如圖所示,在焊線10上週期性地形成缺口11,且每一缺口11可用於形成一間 柱凸塊2(繪示於第1圖)。
在第2A至2C圖的實施例中,焊線10在形成間柱凸塊2(繪示於第1圖)的製程之前預先刻缺口,然後預先刻缺口後的焊線10用於進行焊線接合製程。由預先刻缺口後的焊線10形成間柱凸塊2(繪示於第1圖)的製造裝置類似於第3圖所繪示,除了第3圖中的刻缺口裝置14並不會使用到,因為捲盤12上的焊線10已經預先刻好缺口了。
第3圖係繪示出本發明另一實施例,其中焊線10進行原位(in-situ)刻缺口,其為形成間柱凸塊2的製程的一部分。在本實施例中,焊線10從捲盤12通往滑輪16。刻缺口裝置14(可類似於第2B圖所繪示的刻缺口裝置14)設置於捲盤12與滑輪16之間,且當焊線10從捲盤12通往滑輪16時,即時對焊線10刻缺口,所得到刻缺口後的焊線10實質上與第2C圖所繪示的相同。滑輪16捲起刻缺口後的焊線10且送進焊針18。焊針18將焊線10設置於適當的位置(例如在積體電路晶片、印刷電路板(printed circuit board,PCB)、轉接板或類似的元件的電性連接器4的上方),且透過一或多個製程(例如熱、壓力、音波振動、熱壓及類似的製程)接合焊線10至電性連接器4。
任何所屬技術領域中具有通常知識者可以理解相對於未刻缺口的區域,刻缺口後的焊線10在缺口處會變脆弱。因此,將焊線10夾住並向上(相對於電性連接器4,亦繪示於第1圖)提起,焊線10會從缺口區域斷裂。透過控制缺口區域(如上述)之間的距離,可小心地控制得到的間柱凸塊2的尾端區8(繪示於第1圖)的高度TH,反過來說也可 精準地控制間柱凸塊2的全部高度OH。在斷裂之後,尾端區8可直立。
第4A至4D圖係繪示出本發明另一實施例之形成間柱凸塊2的製造方法。在本實施例中,當焊線10在通過焊針18時及送進焊針18之前尚未刻缺口。第4A圖繪示的步驟中,未刻缺口的焊線10送進焊針18且接觸電性連接器4以形成間柱凸塊2。在形成間柱凸塊2之後,夾鉗20將焊線10刻缺口或壓皺。在夾鉗20的鉗臂之間夾緊焊線10,以將其壓皺或刻缺口,且盡量使焊線10不斷裂。
第4B圖係繪示出夾鉗20將焊線10刻缺口且接著被移開或未被移開之後的焊線10。此時,焊針18開始向上(相對於間柱凸塊2)移動、拉伸及拉緊焊線10(如第4C圖所示)。如第4D圖所示,焊線10從夾鉗20所刻出的缺口處斷裂。任何所屬技術領域中具有通常知識者可以瞭解的是,在壓皺的過程中適當地放置夾鉗20,可準確地控制得到的間柱凸塊2的尾端區8(繪示於第1圖)的高度TH。
第5A至5C圖係繪示出本發明另一實施例之形成間柱凸塊2的製造方法。在本實施例中,加熱元件22用以在焊線10內形成脆弱點,此實施例中同樣不需要對焊線10預先刻缺口(不過在某些實施例中,第1及/或2圖的刻缺口技術與第4A至5C圖的另一技術可皆使用)。第5A圖係繪示出在製程中焊線10透過焊針18從間柱凸塊2(繪示於第1圖)接合至電性連接器4。加熱元件22靠近或接觸焊線10內預期形成脆弱點(類似於上述實施例中形成的缺口)的一點。加熱元件22可為耐熱元件、感熱元件、發射高密集 的無線電波(radio frequency,RF)或其他能量(例如火花)的裝置或類似的元件。在某些實施例中,對加熱元件22施加高電壓,其可低於用以融化焊線10的頂端(請參照第9B圖)的電壓,而將焊線10加熱及軟化。
在上述實施例中,加熱元件22對焊線10小範圍的集中加熱(如第5B圖所示),造成焊線10的一部分軟化、變脆弱且可能輕微地變形,但並不需要完全熔化或切斷。當焊針18向上移動,焊線10從加熱元件22造成的脆弱點分離(如第5C圖所示)。雖然上述實施例中,加熱元件22如圖所示在整個製程中維持靠近或接觸焊線10,在某些實施例中,加熱元件22可在焊針18從電性連接器4移開之前從焊線10移開。
第6A至6E圖係繪示出本發明其它實施例,在這些實施例中,透過焊針18迫使焊線10通過彈性刀片24,然後焊針18拉回焊線10的動作,彈性刀片24自動地切斷焊線10。第6A圖係繪示出焊針18朝向彈性刀片24移動。同樣繪示於第6A圖,管狀結構26圍繞焊針18,其可為陶瓷管,作為惰性氣體(例如氮氣(N2))、還原氣體(例如氦氣(H2))及/或其他氣體的通道。在產生火花(即,在焊線10的頂端上形成焊球2’)的步驟中,氣體依序地吹向焊線10(請參照第9B及9C圖)。
第6B圖係繪示出焊針18迫使焊線10進入彈性刀片24內。如第6C圖所示,焊針18更向下移動,造成彈性刀片24打開,而彈性刀片24的相對刀片分開使焊線10及或許還有焊針18的頂端可通過。接著,在形成間柱凸塊2(繪 示於第1圖)的焊線接合製程後,當焊針18向上移動,彈性刀片24的相對刀片迅速彈回原位、互相關上且切斷焊線10(繪示於第6D圖)。第6E圖係繪示出焊線10被切斷。焊線10通過彈性刀片24且被切斷的過程可重複進行。然而,在本實施例中,對於形成間柱凸塊2(繪示於第1圖),通過彈性刀片24的過程一次已足夠。
第7A至8B圖係繪示出使用不同形狀的彈性刀片。第7A至8B圖之較佳實施例的優點為不需外部致動機器以切斷焊線10,透過焊線10通過彈性刀片24的刀片然後從刀片之間往回拉出的動作,自動地切斷焊線10。任何所屬技術領域中具有通常知識者可以瞭解的是,透過彈性刀片24適當的形狀及放置,可輕易地得到想要的尾端區8的高度TH(繪示於第1圖)。第8A及8B圖亦繪示出焊針18迫使彈性刀片24打開,然後往回拉以使焊線10自動被切斷。
第9A至9F圖係繪示出本發明其他實施例。除了在夾鉗30內設置切割裝置17之外,此實施例類似第3圖的實施例。夾鉗30可位於焊針18上方,且可與焊針18同步上下移動。在某些實施例中(如第9A圖所示),夾鉗30包括在焊線10相對兩側的兩部件,而在第一部件上設置切割裝置17(例如一刀片),且其刀片朝向第二部件,而切割裝置17的刀片突出於第一部件的表面30A且其表面再次面向第二部件。
請參照第9A圖,夾鉗30夾住焊線10,使得夾鉗30與焊針18同步向下移動時,焊線10隨著焊針18一起向下移動。可在之前的間柱凸塊2的接合製程之後進行夾鉗30 的壓皺製程(如第9A圖所示)。因此當夾鉗30夾住焊線10,切割裝置17在焊線10內形成缺口。接著,在第9B圖中,在焊線10的頂端產生火花,使得焊球2’形成於焊線10的頂端(如第9C圖所示),可透過帶有高電壓的電子點火(electrical flame off,EFO)裝置34產生火花。在第9D圖中,夾鉗30與焊針18一起向下移動且完成焊線接合製程,使得焊球2’座落於電性連接器4上而形成間柱凸塊2。然後夾鉗30鬆開焊線10且在焊線10內留下新形成的缺口11,接著焊針18可向上移動而未將焊線10往上拉。在焊針18向上移動至預期的位置之後(如第9E圖所示),夾鉗30再次夾住焊線10且再繼續進行第9A圖的製程,而完成下一個焊線接合製程。
具有尾端區8的間柱凸塊2(繪示於第1圖)可用於焊料接合製程,其中可形成圍繞尾端區8的焊料區。因此,高尾端區8作為相對地高但不粗厚的焊料區的支柱,因此縮小了焊料區的尺寸,且可增加作為形成間柱凸塊2的焊料類的連接器的密度。
配合本發明實施例之一種凸塊製造裝置,包括用以提供焊線的捲盤、用以在焊線內形成缺口的切割裝置以及用以接合焊線而形成間柱凸塊的焊針。其中凸塊製造裝置將焊線從缺口拉斷,使得焊線的尾端區貼附於間柱凸塊。
配合本發明另一實施例之一種凸塊製造裝置,包括用以提供焊線的捲盤、用以接合焊線而形成間柱凸塊的焊針、設置於捲盤與焊針之間的夾鉗,其中夾鉗與焊針同步上下移動;以及貼附於夾鉗的切割裝置,其中透過夾鉗夾 住焊線而使切割裝置在焊線內形成缺口。
配合本發明其他實施例之一種凸塊製造方法,包括在焊線內形成缺口。將焊線接合至電性連接器,且在電性連接器上形成間柱凸塊,以及將焊線從缺口拉斷而與間柱凸塊分開。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作更動、替代與潤飾。舉例來說,任何所屬技術領域中具有通常知識者可輕易理解此處所述的許多特徵、功能、製程及材料可在本發明的範圍內作更動。再者,本發明之保護範圍並未侷限於說明書內所述特定實施例中的製程、機器、製造、物質組成、裝置、方法及步驟,任何所屬技術領域中具有通常知識者可從本發明揭示內容中理解現行或未來所發展出的製程、機器、製造、物質組成、裝置、方法及步驟,只要可以在此處所述實施例中實施大體相同功能或獲得大體相同結果皆可使用於本發明中。因此,本發明之保護範圍包括上述製程、機器、製造、物質組成、裝置、方法及步驟。另外,每一申請專利範圍構成個別的實施例,且本發明之保護範圍也包括各個申請專利範圍及實施例的組合。
2‧‧‧間柱凸塊
2’‧‧‧焊球
4‧‧‧電性連接器
6‧‧‧凸塊區
8‧‧‧尾端區
10‧‧‧焊線
11‧‧‧缺口
12‧‧‧捲盤
14‧‧‧刻缺口裝置
15‧‧‧滾輪
16‧‧‧滑輪
17‧‧‧切割裝置
18‧‧‧焊針
20、30‧‧‧夾鉗
22‧‧‧加熱元件
24‧‧‧彈性刀片
26‧‧‧管狀結構
30A‧‧‧表面
34‧‧‧電子點火裝置
BH、TH、OH‧‧‧高度
P1‧‧‧間距
第1圖係繪示出本發明實施例之間柱凸塊的示意圖;第2A至2C圖係繪示出本發明第一實施例之在焊線上預先刻缺口的製造方法的示意圖;第3圖係繪示出本發明第二實施例之在焊線上進行原位刻缺口製造方法的示意圖;第4A至4D圖係繪示出本發明第三實施例之在接合後透過機械壓皺以形成間柱凸塊的示意圖;第5A至5C圖係繪示出本發明第四實施例之使焊線變脆弱以形成間柱凸塊的示意圖;第6A至6E圖係繪示出本發明第五實施例之透過彈性刀片形成間柱凸塊的示意圖;第7A至7C圖係繪示出本發明實施例之具有不同形狀的額外彈性刀片的示意圖;第8A至8B圖係繪示出本發明實施例之透過額外彈性刀片在焊線上刻缺口的示意圖;以及第9A至9F圖係繪示出本發明第六實施例之以夾鉗夾住焊線並刻缺口以形成間柱凸塊的製造方法的示意圖。
2‧‧‧間柱凸塊
4‧‧‧電性連接器
10‧‧‧焊線
12‧‧‧捲盤
14‧‧‧刻缺口裝置
15‧‧‧滾輪
16‧‧‧滑輪
17‧‧‧切割裝置
18‧‧‧焊針

Claims (6)

  1. 一種凸塊製造裝置,包括:一捲盤,用以提供一焊線;一切割裝置,用以在該焊線內形成一缺口;一焊針,用以接合該焊線而形成一間柱凸塊,其中該凸塊製造裝置將該焊線從該缺口拉斷,使得該焊線的一尾端區貼附於該間柱凸塊,且其中該切割裝置設置於該捲盤及該焊針之間;以及彼此相鄰的兩滾輪,該焊線從該兩滾輪之間通過,其中該切割裝置設置於該兩滾輪其中之一者。
  2. 一種凸塊製造裝置,包括:一捲盤,用以提供一焊線;一焊針,用以接合該焊線而形成一間柱凸塊;一夾鉗,設置於該捲盤與該焊針之間,其中該夾鉗與該焊針同步上下移動,且該夾鉗包括位於該焊線相對兩側的一第一及一第二部件;以及一切割一裝置,貼附於該夾鉗,且該切割裝置為設置於該第一部件上且面向該第二部件的一刀片,其中該刀片突出該第一部件的一表面,且該第一部件的該表面面向該第二部件,其中透過該夾鉗夾住該焊線而使該切割裝置在該焊線內形成一缺口。
  3. 如申請範圍第2項所述之凸塊製造裝置,其中在一接合製程中,該焊針將在該焊線的一頂端的一焊球接合至一電性連接器上,其中被接合的該焊球形成該間柱凸塊,且其中該夾鉗將該焊線從該缺口拉斷。
  4. 一種凸塊製造方法,包括:在一焊線內形成一缺口,其中透過一彈性刀片形成該缺口,且其中形成該缺口的步驟包括:將一焊針推向該彈性刀片的複數刀片,使該彈性刀片打開,其中該焊線通過該焊針及該彈性刀片的該等刀片;以及在接合的步驟之後拉回該焊針,以允許該彈性刀片迅速彈回,其中該彈性刀片的該等刀片朝向彼此移動以在該焊線內形成該缺口;將該焊線接合至一電性連接器,且在該電性連接器上形成一間柱凸塊;以及將該焊線從該缺口拉斷而與該間柱凸塊分開。
  5. 如申請範圍第4項所述之凸塊製造方法,更包括由一捲盤提供該焊線,其中在該捲盤提供該焊線之前或之後進行在該焊線內形成該缺口的步驟。
  6. 如申請範圍第4項所述之凸塊製造方法,其中在接合該焊線及形成該間柱凸塊的步驟之前或之後形成該缺口。
TW101143377A 2011-12-29 2012-11-21 凸塊製造裝置及製造方法 TWI501368B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161581327P 2011-12-29 2011-12-29
US13/527,459 US9021682B2 (en) 2011-12-29 2012-06-19 Apparatus for stud bump formation

Publications (2)

Publication Number Publication Date
TW201327751A TW201327751A (zh) 2013-07-01
TWI501368B true TWI501368B (zh) 2015-09-21

Family

ID=48608035

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101143377A TWI501368B (zh) 2011-12-29 2012-11-21 凸塊製造裝置及製造方法

Country Status (5)

Country Link
US (2) US9021682B2 (zh)
KR (1) KR101415377B1 (zh)
CN (1) CN103187315B (zh)
DE (1) DE102012112667A1 (zh)
TW (1) TWI501368B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9021682B2 (en) * 2011-12-29 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for stud bump formation
US8540136B1 (en) * 2012-09-06 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for stud bump formation and apparatus for performing the same
US9209147B1 (en) 2014-07-17 2015-12-08 Freescale Semiconductor, Inc. Method of forming pillar bump
CN105895543B (zh) * 2014-12-01 2019-09-13 恩智浦美国有限公司 接合引线进给系统及其方法
DE102015100149A1 (de) * 2015-01-08 2016-07-14 Raimund Huber Elektrisches Funktionsbauteil mit Kontaktstift und Verfahren zur Herstellung eines elektrischen Funktionsbauteils
US10854476B2 (en) * 2018-08-06 2020-12-01 Sj Semiconductor (Jiangyin) Corporation Semiconductor vertical wire bonding structure and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3612369A (en) * 1969-11-14 1971-10-12 Amp Inc Wire feed for lead making machine
TW469551B (en) * 1999-12-02 2001-12-21 Shinkawa Kk Method for forming pin-like wires and the like
WO2011154061A1 (en) * 2010-06-07 2011-12-15 Feinics Amatech Teoranta Mounting and connecting an antenna wire in a transponder

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572421A (en) 1983-09-19 1986-02-25 Storage Technology Partners Apparatus for feeding wire to a wire bonding mechanism
US4628600A (en) * 1985-01-23 1986-12-16 Amp Incorporated Method and apparatus for producing electrical harnesses having multi-contact connectors and discrete wires
US5189507A (en) * 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
US4950866A (en) * 1987-12-08 1990-08-21 Hitachi, Ltd. Method and apparatus of bonding insulated and coated wire
JPH01225340A (ja) * 1988-03-04 1989-09-08 Nec Corp 半導体金属突起電極の製造方法
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
US6295729B1 (en) * 1992-10-19 2001-10-02 International Business Machines Corporation Angled flying lead wire bonding process
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
KR100201914B1 (ko) 1996-12-02 1999-06-15 윤종용 반도체 칩 패키지용 와이어 본딩 장치
KR20000025944A (ko) 1998-10-16 2000-05-06 옥치담 영상가요반주시스템의선곡장치및방법
JP2001053097A (ja) 1999-08-10 2001-02-23 Matsushita Electric Works Ltd スタッドバンプ形成方法
JP3513444B2 (ja) * 1999-10-20 2004-03-31 株式会社新川 ピン状ワイヤ等の形成方法
US7227095B2 (en) * 2003-08-06 2007-06-05 Micron Technology, Inc. Wire bonders and methods of wire-bonding
CA2552524A1 (en) 2004-01-10 2005-07-28 Biolipid, Inc. Lipid compositions and methods of use
JP4509043B2 (ja) 2006-02-14 2010-07-21 株式会社新川 スタッドバンプの形成方法
US9021682B2 (en) * 2011-12-29 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for stud bump formation
US8540136B1 (en) * 2012-09-06 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for stud bump formation and apparatus for performing the same
US9209147B1 (en) * 2014-07-17 2015-12-08 Freescale Semiconductor, Inc. Method of forming pillar bump

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3612369A (en) * 1969-11-14 1971-10-12 Amp Inc Wire feed for lead making machine
TW469551B (en) * 1999-12-02 2001-12-21 Shinkawa Kk Method for forming pin-like wires and the like
WO2011154061A1 (en) * 2010-06-07 2011-12-15 Feinics Amatech Teoranta Mounting and connecting an antenna wire in a transponder

Also Published As

Publication number Publication date
US9021682B2 (en) 2015-05-05
US20150235975A1 (en) 2015-08-20
KR101415377B1 (ko) 2014-07-04
US10147693B2 (en) 2018-12-04
CN103187315B (zh) 2016-08-03
US20130167373A1 (en) 2013-07-04
TW201327751A (zh) 2013-07-01
CN103187315A (zh) 2013-07-03
DE102012112667A1 (de) 2013-07-04

Similar Documents

Publication Publication Date Title
TWI501368B (zh) 凸塊製造裝置及製造方法
TW484193B (en) Forming method of pin-shaped conducting wire and the like
US7021521B2 (en) Bump connection and method and apparatus for forming said connection
US3672047A (en) Method for bonding a conductive wire to a metal electrode
JP4509043B2 (ja) スタッドバンプの形成方法
US9498851B2 (en) Methods for forming apparatus for stud bump formation
JP2006302963A (ja) 半導体装置及び半導体装置の製造方法
CN110087821B (zh) 导电构件的制造方法及导电构件
WO2015125671A1 (ja) 半導体装置の製造方法及びワイヤボンディング装置
JP2007194270A (ja) ボンディングリボンおよびこれを用いたボンディング方法
CN106233443B (zh) 凸块形成方法、凸块形成装置以及半导体装置的制造方法
JP3728918B2 (ja) 基板、基板の製造方法及び突起製造装置
WO2020235211A1 (ja) ピン状ワイヤ成形方法及びワイヤボンディング装置
US6712261B2 (en) Solid conductive element insertion apparatus
JP2586811B2 (ja) はんだバンプ形成方法
JP2010287633A (ja) 半導体装置及びその製造方法並びにワイヤボンディング装置及びその動作方法
JP2007066991A (ja) ワイヤの切断方法
JP2009054950A (ja) バンプ形成方法
JP2005167178A (ja) 半導体装置及びワイヤボンディング方法
TW201308458A (zh) 導線接合裝置及半導體裝置之製造方法
KR100715978B1 (ko) 스파크 발생수단을 갖는 와이어 본딩용 캐필러리
JPH04334035A (ja) 半田ワイヤとそのワイヤを使用した半田バンプの形成方法
JP5768675B2 (ja) ワイヤボンディング方法
JPH0837191A (ja) バンプ形成方法
JPH0945695A (ja) 突起電極の製造装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees