TWI494705B - 投射曝光方法、投射曝光系統與投射物鏡 - Google Patents
投射曝光方法、投射曝光系統與投射物鏡 Download PDFInfo
- Publication number
- TWI494705B TWI494705B TW099104346A TW99104346A TWI494705B TW I494705 B TWI494705 B TW I494705B TW 099104346 A TW099104346 A TW 099104346A TW 99104346 A TW99104346 A TW 99104346A TW I494705 B TWI494705 B TW I494705B
- Authority
- TW
- Taiwan
- Prior art keywords
- projection objective
- projection
- field
- objective
- mirror
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 40
- 230000003287 optical effect Effects 0.000 claims description 123
- 239000000758 substrate Substances 0.000 claims description 111
- 230000004075 alteration Effects 0.000 claims description 94
- 238000003384 imaging method Methods 0.000 claims description 48
- 230000008859 change Effects 0.000 claims description 35
- 230000005855 radiation Effects 0.000 claims description 35
- 238000005286 illumination Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 48
- 230000000694 effects Effects 0.000 description 23
- 238000005452 bending Methods 0.000 description 14
- 210000001747 pupil Anatomy 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000012937 correction Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 9
- 238000012876 topography Methods 0.000 description 9
- 201000009310 astigmatism Diseases 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 206010010071 Coma Diseases 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000000671 immersion lithography Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000036962 time dependent Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 206010073261 Ovarian theca cell tumour Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 102220047090 rs6152 Human genes 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 208000001644 thecoma Diseases 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09001938A EP2219077A1 (en) | 2009-02-12 | 2009-02-12 | Projection exposure method, projection exposure system and projection objective |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201104358A TW201104358A (en) | 2011-02-01 |
| TWI494705B true TWI494705B (zh) | 2015-08-01 |
Family
ID=40810288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099104346A TWI494705B (zh) | 2009-02-12 | 2010-02-11 | 投射曝光方法、投射曝光系統與投射物鏡 |
Country Status (4)
| Country | Link |
|---|---|
| US (5) | US8873022B2 (enExample) |
| EP (1) | EP2219077A1 (enExample) |
| JP (4) | JP5671243B2 (enExample) |
| TW (1) | TWI494705B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2219077A1 (en) * | 2009-02-12 | 2010-08-18 | Carl Zeiss SMT AG | Projection exposure method, projection exposure system and projection objective |
| EP2689427B1 (en) * | 2011-03-23 | 2017-05-03 | Carl Zeiss SMT GmbH | Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement |
| TWI587077B (zh) * | 2012-03-07 | 2017-06-11 | 尼康股份有限公司 | 光罩、光罩單元、曝光裝置、基板處理裝置、及元件製造方法 |
| DE102012211256A1 (de) * | 2012-06-29 | 2014-01-02 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Projektionslithographie |
| US9298102B2 (en) * | 2013-03-13 | 2016-03-29 | Carl Zeiss Smt Gmbh | Projection lens with wavefront manipulator |
| US9651872B2 (en) | 2013-03-13 | 2017-05-16 | Carl Zeiss Smt Gmbh | Projection lens with wavefront manipulator |
| KR101597186B1 (ko) * | 2013-06-21 | 2016-02-24 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 마스크 블랭크, 전사용 마스크 및 이들의 제조방법, 그리고 반도체 디바이스의 제조방법 |
| WO2015032418A1 (en) * | 2013-09-09 | 2015-03-12 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus and method of correcting optical wavefront deformations in such an apparatus |
| US9516729B2 (en) * | 2014-12-16 | 2016-12-06 | Asml Netherlands B.V. | Variable radius mirror dichroic beam splitter module for extreme ultraviolet source |
| DE102015218329A1 (de) * | 2015-09-24 | 2017-03-30 | Carl Zeiss Smt Gmbh | Optische Korrekturanordnung, Projektionsobjektiv mit einer solchen optischen Korrekturanordnung sowie mikrolithografische Apparatur mit einem solchen Projektionsobjektiv |
| DE102016205072A1 (de) * | 2016-03-29 | 2017-03-16 | Carl Zeiss Smt Gmbh | Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie |
| WO2018028971A1 (en) * | 2016-08-11 | 2018-02-15 | Asml Holding N.V. | Variable corrector of a wave front |
| JP6951446B2 (ja) * | 2016-12-20 | 2021-10-20 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 感光性の層を露光するための装置および方法 |
| CN113632008A (zh) | 2019-01-18 | 2021-11-09 | Asml荷兰有限公司 | 投影系统和包括所述投影系统的光刻设备 |
| JP7178932B2 (ja) * | 2019-03-12 | 2022-11-28 | キヤノン株式会社 | 露光装置、および物品製造方法 |
| JP7730625B2 (ja) * | 2020-09-01 | 2025-08-28 | キヤノン株式会社 | 成形装置、成形方法、およびテンプレート |
| CN116710847A (zh) | 2021-01-19 | 2023-09-05 | 卡尔蔡司Smt有限责任公司 | 设置投射曝光系统的方法、投射曝光方法以及用于微光刻的投射曝光系统 |
| US11852980B2 (en) * | 2021-03-05 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Techniques for correction of aberrations |
Citations (4)
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| US20060092393A1 (en) * | 2004-10-28 | 2006-05-04 | Asml Holding N.V. | Lithographic apparatus having an adjustable projection system and device manufacturing method |
| US20060256314A1 (en) * | 2005-05-13 | 2006-11-16 | Christoph Nolscher | Method for exposing a semiconductor wafer |
| CN1910494A (zh) * | 2004-01-14 | 2007-02-07 | 卡尔蔡司Smt股份公司 | 反射折射投影物镜 |
| WO2008126926A1 (en) * | 2007-04-10 | 2008-10-23 | Nikon Corporation | Exposure method and electronic device manufacturing method |
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| JP3341269B2 (ja) | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
| JP3303758B2 (ja) * | 1996-12-28 | 2002-07-22 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
| EP0851304B1 (en) | 1996-12-28 | 2004-03-17 | Canon Kabushiki Kaisha | Projection exposure apparatus and device manufacturing method |
| JPH1145846A (ja) | 1997-07-25 | 1999-02-16 | Nikon Corp | 走査型露光方法及び装置 |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| US7112772B2 (en) * | 1998-05-29 | 2006-09-26 | Carl Zeiss Smt Ag | Catadioptric projection objective with adaptive mirror and projection exposure method |
| DE19824030A1 (de) | 1998-05-29 | 1999-12-02 | Zeiss Carl Fa | Katadioptrisches Projektionsobjektiv mit adaptivem Spiegel und Projektionsbelichtungsverfahren |
| JPH11354410A (ja) * | 1998-06-09 | 1999-12-24 | Sony Corp | 露光装置および露光方法 |
| JP2000019165A (ja) * | 1998-06-30 | 2000-01-21 | Shimadzu Corp | ガスクロマトグラフ装置 |
| TW490596B (en) | 1999-03-08 | 2002-06-11 | Asm Lithography Bv | Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus |
| TW575771B (en) * | 2000-07-13 | 2004-02-11 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| JP2002037545A (ja) | 2000-07-26 | 2002-02-06 | Matsushita Electric Works Ltd | エレベータのブレーキ制御回路 |
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| DE10222331A1 (de) | 2002-05-18 | 2003-11-27 | Zeiss Carl Smt Ag | Verfahren zur gezielten Deformation eines optischen Elements |
| JP2004056125A (ja) | 2002-06-20 | 2004-02-19 | Nikon Corp | 個別アクチュエータを有する反射投影光学系 |
| US6880942B2 (en) * | 2002-06-20 | 2005-04-19 | Nikon Corporation | Adaptive optic with discrete actuators for continuous deformation of a deformable mirror system |
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| US7196772B2 (en) | 2003-11-07 | 2007-03-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1705694A4 (en) * | 2004-01-06 | 2007-10-31 | Nikon Corp | EXPOSURE METHOD AND DEVICE AND COMPONENTS MANUFACTURING METHOD |
| DE112005000098T5 (de) | 2004-06-23 | 2007-06-28 | Daiso Co., Ltd. | Hochbeständiges Packungsmaterial für die Flüssigchromatographie |
| JP4843272B2 (ja) | 2004-07-31 | 2011-12-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学システム |
| US8212988B2 (en) | 2004-08-06 | 2012-07-03 | Carl Zeiss GmbH | Projection objective for microlithography |
| FR2877104B1 (fr) * | 2004-10-27 | 2006-12-29 | Sagem | Dispositif d'imagerie ou d'insolation, notamment pour la realisation d'un micro-circuit electronique |
| WO2006053751A2 (de) * | 2004-11-18 | 2006-05-26 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen projektionsbelichtungsanlage |
| JP4817702B2 (ja) * | 2005-04-14 | 2011-11-16 | キヤノン株式会社 | 光学装置及びそれを備えた露光装置 |
| CN100474115C (zh) * | 2006-04-04 | 2009-04-01 | 上海微电子装备有限公司 | 光刻机成像光学系统像差现场测量方法 |
| US8197076B2 (en) * | 2006-05-11 | 2012-06-12 | Massachusetts Institute Of Technology | Magnetic membrane mirror |
| DE102006024810A1 (de) | 2006-05-27 | 2007-11-29 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage sowie adaptiver Spiegel hierfür |
| EP1890191A1 (en) * | 2006-08-14 | 2008-02-20 | Carl Zeiss SMT AG | Catadioptric projection objective with pupil mirror |
| DE102006045075A1 (de) | 2006-09-21 | 2008-04-03 | Carl Zeiss Smt Ag | Steuerbares optisches Element |
| EP1998223A2 (de) | 2007-01-23 | 2008-12-03 | Carl Zeiss SMT AG | Projektionsobjektiv für die Lithographie |
| US20090042115A1 (en) | 2007-04-10 | 2009-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and electronic device manufacturing method |
| DE102008001800A1 (de) | 2007-05-25 | 2008-11-27 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Mikrolithographie, Mikrolithographie-Projektionsbelichtungsanlage mit einem derartigen Projektionsobjektiv, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement |
| JP2008292801A (ja) * | 2007-05-25 | 2008-12-04 | Canon Inc | 露光装置および方法 |
| US8440375B2 (en) | 2007-05-29 | 2013-05-14 | Nikon Corporation | Exposure method and electronic device manufacturing method |
| JP5406437B2 (ja) * | 2007-06-22 | 2014-02-05 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP5033724B2 (ja) * | 2007-07-12 | 2012-09-26 | 株式会社沖データ | 文書検索装置及び画像形成装置、文書検索システム |
| JP5224218B2 (ja) | 2007-07-23 | 2013-07-03 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学システム |
| WO2009018911A1 (en) | 2007-08-03 | 2009-02-12 | Carl Zeiss Smt Ag | Projection objective for microlithography, projection exposure apparatus, projection exposure method and optical correction plate |
| US7993780B2 (en) * | 2007-10-05 | 2011-08-09 | Nanotek Instruments, Inc. | Process for producing carbon anode compositions for lithium ion batteries |
| JP5105474B2 (ja) * | 2007-10-19 | 2012-12-26 | 国立大学法人東京農工大学 | 露光装置及びデバイス製造方法 |
| EP2219077A1 (en) | 2009-02-12 | 2010-08-18 | Carl Zeiss SMT AG | Projection exposure method, projection exposure system and projection objective |
-
2009
- 2009-02-12 EP EP09001938A patent/EP2219077A1/en not_active Withdrawn
-
2010
- 2010-02-03 US US12/699,529 patent/US8873022B2/en active Active
- 2010-02-11 TW TW099104346A patent/TWI494705B/zh active
- 2010-02-12 JP JP2010047084A patent/JP5671243B2/ja active Active
-
2014
- 2014-07-17 JP JP2014147060A patent/JP5923559B2/ja active Active
- 2014-09-25 US US14/496,933 patent/US9036129B2/en active Active
-
2015
- 2015-04-10 US US14/683,377 patent/US20150227052A1/en not_active Abandoned
-
2016
- 2016-04-18 JP JP2016082705A patent/JP6407193B2/ja active Active
- 2016-05-16 US US15/155,613 patent/US9678440B2/en active Active
-
2017
- 2017-06-06 US US15/614,907 patent/US20180059548A1/en not_active Abandoned
-
2018
- 2018-09-18 JP JP2018173273A patent/JP2019020739A/ja not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1910494A (zh) * | 2004-01-14 | 2007-02-07 | 卡尔蔡司Smt股份公司 | 反射折射投影物镜 |
| US20060092393A1 (en) * | 2004-10-28 | 2006-05-04 | Asml Holding N.V. | Lithographic apparatus having an adjustable projection system and device manufacturing method |
| US20060256314A1 (en) * | 2005-05-13 | 2006-11-16 | Christoph Nolscher | Method for exposing a semiconductor wafer |
| WO2008126926A1 (en) * | 2007-04-10 | 2008-10-23 | Nikon Corporation | Exposure method and electronic device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6407193B2 (ja) | 2018-10-17 |
| JP5923559B2 (ja) | 2016-05-24 |
| JP2016164675A (ja) | 2016-09-08 |
| EP2219077A1 (en) | 2010-08-18 |
| US20150227052A1 (en) | 2015-08-13 |
| US20100201962A1 (en) | 2010-08-12 |
| JP2014239240A (ja) | 2014-12-18 |
| US20150049320A1 (en) | 2015-02-19 |
| US8873022B2 (en) | 2014-10-28 |
| US20160320707A1 (en) | 2016-11-03 |
| US9036129B2 (en) | 2015-05-19 |
| TW201104358A (en) | 2011-02-01 |
| US20180059548A1 (en) | 2018-03-01 |
| JP2019020739A (ja) | 2019-02-07 |
| JP2010187002A (ja) | 2010-08-26 |
| JP5671243B2 (ja) | 2015-02-18 |
| US9678440B2 (en) | 2017-06-13 |
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