TWI494408B - Adhesive sheet for manufacturing semiconductor device, and semiconductor device manufacturing method using the same - Google Patents

Description

Semiconductor sheet for manufacturing semiconductor device and method for manufacturing semiconductor device Field of invention

The present invention relates to an adhesive sheet for manufacturing a semiconductor device and a method of manufacturing the semiconductor device.

The present application claims priority based on Japanese Patent Application No. 2012-70403, filed on Jan.

Background of the invention

In recent years, in addition to miniaturization and multi-functionalization of electronic devices such as portable computers and mobile phones, in addition to miniaturization and high integration of electronic components constituting electronic devices, high-density mounting technology for electronic components is required. In this context, instead of a peripheral mounted semiconductor device such as a QFP (Quad Flat Package) and an SOP (Small Outline Package), there is a CSP (Chip Scale Package) that can be mounted at a high density. Dimensional package) The isoelectrically mounted semiconductor device attracts attention. Further, it is particularly preferable that the CSP is manufactured by a QFN (Quad Flat Non-leaded) package, which can be manufactured by a conventional semiconductor device manufacturing technique. Therefore, the QFN package is mainly used as a 100-pin The following is a small terminal type semiconductor device.

As a method of manufacturing the QFN package, the following method is generally known. First, the bonding sheet is attached to one side of the lead frame in the attaching step. Next, in the die attaching step, a semiconductor element such as each IC chip is mounted on a plurality of semiconductor element mounting portions (die pad portions) formed on the lead frame. Next, in the wire bonding step, the plurality of leads and the semiconductor elements disposed along the outer circumference of each of the semiconductor element mounting portions of the lead frame are electrically connected by a bonding wire. Next, the semiconductor element mounted on the lead frame is sealed by a sealing resin in the sealing step. Thereafter, the aforementioned sheet is peeled off from the lead frame in the peeling step. By these steps, a QFN cell with a complex QFN package can be formed. Finally, the QFN cell is cut along the periphery of each QFN package during the cutting step. With this step, a plurality of QFN packages can be fabricated.

Conventionally, in the manufacturing method of the QFN package, there is known a room temperature bonding type sheet which is attached to a lead frame at a normal temperature (5 to 35 ° C), or a heating type bonding sheet, and the heating type is followed by a sheet having heat. The hardened adhesive layer is heated at an arbitrary temperature to adhere to the lead frame while being in contact with the lead frame.

The normal temperature and the subsequent type of film are quite easy to apply to the lead frame. However, there is a problem that resin leakage (molding flash) is liable to occur in the subsequent sealing step.

The heat-bonding type of the back sheet has a high bonding strength with the lead frame and it is difficult to produce a molding flash.

As a heating-on-substrate, for example, a fluorine-containing tree has been proposed. An adhesive sheet for producing a semiconductor device of an adhesive layer of a grease and a reactive elastic material (for example, Patent Document 1). According to the invention of Patent Document 1, it is possible to prevent the molding of the flash.

Prior technical literature Patent literature

Patent Document 1: JP-A-2007-123711

Summary of invention

However, the conventional heating-and-substrate sheet does not adhere to the lead frame or the wiring substrate at normal temperature. Therefore, it is necessary to perform the heat treatment in advance in the attaching step, so that the manufacturing operation of the semiconductor device is rather complicated.

Further, since the thermal expansion ratio of the heat-receiving type bonding sheet and the lead frame and the wiring substrate is greatly different, warpage of the lead frame and the wiring substrate may occur during heating.

In recent years, in order to further reduce the size and performance of electronic devices, the miniaturization and high performance of semiconductor devices have also progressed. With the miniaturization and high performance of the semiconductor device, the lead frame and the wiring substrate are gradually lighter and thinner, or the perforation area per unit area is more increased, and the rigidity is low. Therefore, when the low-rigidity lead frame, the wiring board, and the like are subjected to heat treatment for adhering the heat-bonding type back sheet, there is a problem that warpage is likely to occur in the lead frame and the wiring board. In the pasting step, once large warpage occurs in the lead frame and the wiring substrate, it is difficult to position in the subsequent die attaching step and the wire bonding step, and damage the semiconductor The productivity of the body device.

For example, in the invention of Citation 1, although the molding flash can be satisfactorily suppressed, it is not an invention capable of sufficiently suppressing the warpage generated on the lead frame which has been thinned in recent years.

In view of the above, an object of the present invention is to provide an adhesive sheet for manufacturing a semiconductor device which can suppress molding flash and can improve the productivity of a semiconductor device.

The adhesive sheet for manufacturing a semiconductor device according to the present invention includes a substrate and a thermosetting adhesive layer provided on one surface of the substrate, and is adhered to the lead frame or the wiring substrate of the semiconductor device in a peeling manner, and is characterized in that The following agent layer: the strength a before heating was measured in the following peeling test A was 0.07 N/20 mm or more, and the strength b after heating measured in the following peeling test B was 0.58 N/20 mm or more, and the peeling test was as follows. The heating c measured in C is followed by a strength c of 1.17 N/20 mm or more:

<Peel Test A>

‧ The copper plate with the gold-plated layer on the surface is placed on the plate; ‧ a 20 mm wide semiconductor device manufacturing adhesive sheet is attached to the above-mentioned adhering plate as a pre-heating sample at 25 ° C and a pressure of 0.37 N/mm; ‧ at a measurement temperature of 25 ° C, a peeling angle of 90 ° and a peeling speed of 50 mm / min, the above-mentioned pre-heating sample semiconductor device manufacturing sheet is peeled off to calculate the maximum stress, and this is the heating before the strength a;

<Peel Test B>

‧ For the pre-heating sample prepared in the aforementioned peel test A, at 175 ° C The heat treatment was performed for 1 hour as a sample after heating; ‧ at a measurement temperature of 175 ° C, a peeling angle of 90 °, and a peeling speed of 10 mm/min, the film for manufacturing the semiconductor device after heating was peeled off to calculate the maximum stress, and Taking this as the heating followed by the strength b;

<Peel Test C>

‧ At the measurement temperature of 175 ° C, the peeling angle of 90 °, and the peeling speed of 500 mm / min, the post-heating sample for the semiconductor device prepared in the peeling test B was peeled off to calculate the maximum stress, and this was used as the heating. Then the intensity c.

In the method of manufacturing a semiconductor device of the present invention, the above-described method for manufacturing a semiconductor device according to the present invention includes the step of attaching the bonding sheet for manufacturing a semiconductor device to a lead frame or a wiring substrate. a die attaching step of mounting a semiconductor element on the lead frame or the wiring substrate; a sealing step of sealing the semiconductor element with a sealing resin; and a peeling step of, after the sealing step, the bonding piece for manufacturing the semiconductor device The lead frame or the wiring board is peeled off.

The adhesive sheet for manufacturing a semiconductor device of the present invention can satisfactorily suppress molding flash and improve the productivity of the semiconductor device.

10‧‧‧Next film

20‧‧‧ lead frame

21‧‧‧Semiconductor component mounting section (die pad section)

22‧‧‧ leads

30‧‧‧Semiconductor components

31‧‧‧Connected wire

40‧‧‧ sealing resin

50‧‧‧QFN package

60‧‧‧QFN unit

Fig. 1 is a plan view showing an example of a lead frame used in a method of manufacturing a semiconductor device of the present invention.

2(a) to (f) illustrate one of the manufacturing methods of the semiconductor device of the present invention. Step diagram of the example.

Form for implementing the invention

Hereinafter, an example of a method of manufacturing a semiconductor wafer to which the present invention is applied and a semiconductor device using the same will be described in detail. However, the invention is not limited solely by these examples. Additions, omissions, changes, substitutions, and other changes can be made without departing from the scope of the invention.

The adhesive sheet for manufacturing a semiconductor device of the present invention (hereinafter sometimes referred to simply as a "back sheet") is attached to a lead frame or a wiring board of a semiconductor device in a peelable manner. That is, the sheet can be easily peeled off by using a certain degree of force.

The lead frame is formed by forming a conductor pattern by etching or pressing a metal plate. The wiring board is formed by forming a conductor pattern with a conductive material on the surface of the electrically insulating substrate (or sometimes including the inner surface).

The adhesive sheet of the present invention comprises a substrate and a thermosetting adhesive layer which is provided on one surface of the substrate, that is, a so-called heat-resistant adhesive sheet.

The substrate can be optional. As the substrate having heat resistance, for example, a heat resistant resin film, a metal foil, or the like can be suitably used.

When a semiconductor device such as a QFN package is manufactured using a bonding sheet, the bonding sheet is exposed to a high temperature of 150 to 250 ° C in the steps of the die attaching step, the wire bonding step, and the sealing step. When a heat resistant resin film is used as the substrate, when the temperature is higher than the glass transition temperature (Tg), the thermal expansion coefficient of the heat resistant film is rapidly increased, and the difference in thermal expansion from the metal lead frame is increased. Therefore, when returning to room temperature, there are heat-resistant films and lead frames. Produce a warp. Further, in the case where the heat-resistant film and the lead frame are warped, it is feared that the lead frame cannot be attached to the positioning pin of the mold in the sealing step, and the displacement is poor.

Therefore, when a heat resistant film is used as the substrate, a heat resistant film having a glass transition temperature of 150 ° C or higher is preferably used. The glass transition temperature is preferably 165 ° C or higher, and more preferably 180 ° C or higher. The upper limit of the glass transition temperature is optional. Further, the glass transition temperature of the substrate is preferably higher than the temperature at the high temperature in the above step.

Further, as the substrate, the thermal expansion coefficient of the heat-resistant film at 150 to 250 ° C is preferably 5 to 50 ppm / ° C, preferably 8 to 40 ppm / ° C, and more preferably 10 to 30 ppm / ° C. The heat-resistant film of the above characteristics may, for example, be a polyimine, a polyamine, a polyether oxime, a polyphenylene sulfide, a polyether ketone, a polyetheretherketone, a triethylcellulose, and/or a polyether quinone. The film formed by the film.

Further, when a metal foil is used as the substrate, the thermal expansion coefficient of the metal foil at 150 to 250 ° C is preferably 5 to 50 ppm / ° C for the same reason as the heat resistant film, and is 8 to 40 ppm / ° C. Preferably, it is more preferably 10 to 30 ppm/°C. The metal may be a foil composed of gold, silver, copper, platinum, aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, zinc, palladium, indium or tin, or mainly composed of such metals. An alloy foil of the composition, or a plated foil of the same.

When the semiconductor device is manufactured using the bonding sheet of the present invention, in order to prevent the residual glue in the peeling step described later, the ratio of the bonding strength (the subsequent strength ratio) Sa/Sb defined below is preferably 1.5 or more: the bonding strength Sa, the substrate The bonding strength with the adhesive layer; then the strength Sb, the sealing resin and the lead frame are connected The adhesive strength of the coating layer or the bonding strength of the sealing resin and the wiring substrate and the adhesive layer. When Sa/Sb is less than 1.5, residual glue is easily generated in the sheet peeling step. In order to make the adhesion strength ratio Sa/Sb 1.5 or more, in the case of a heat resistant film, it is preferable to perform corona treatment and electricity on the surface of the heat resistant film on the side where the adhesive layer is formed before forming the adhesive layer. The treatment such as slurry treatment, primer treatment, and sand blasting, etc., such as improving the adhesion strength Sa of the heat resistant film and the adhesive layer. Further, in the case of a metal foil, it can be classified into a rolled metal foil and an electrolytic metal foil by a production method thereof, and in order to make the adhesive strength ratio Sa/Sb 1.5 or more, an electrolytic metal foil is used and roughened. It is preferred to adjust the adhesive layer on the side. Further, electrolytic copper foil is particularly preferably used in the electrolytic metal foil. Further, the strength can be measured using a tensile tester or the like.

The thickness of the substrate can be selected, and can be determined in consideration of materials and the like. For example, it is a thickness of 10 to 100 μm.

The adhesive layer of the adhesive sheet of the present invention has a specific heating front-rear strength a, a specific heating-receiving strength b, and a specific adhesive strength c. By providing the adhesive layer in the subsequent sheet, the molding flash can be satisfactorily suppressed and the productivity of the semiconductor device can be improved.

The adhesive layer is a thermosetting layer that is adhered to the lead frame or the wiring substrate by heat curing.

The thermosetting adhesive layer may, for example, be a reactive elastomer and/or a thermosetting resin and blended with a curing agent. It is preferred to include a reactive elastomer and a hardener. By using the reactive elastic material, the strength a before heating, the strength b after heating, and the strength c after heating can be appropriately selected.

The reactive elastomer has a functional group such as a carboxyl group, an amine group, a vinyl group, or an epoxy group, or an acid anhydride in a side chain. It is therefore reactive. The reactive elastic material can be produced, for example, by copolymerizing a monomer having a functional group when producing an elastic resin or the like. In addition, after producing an elastic resin having an unsaturated bond such as a vinyl bond or the like, a functional group such as an epoxy group may be introduced into an unsaturated bond such as a vinyl group. Further, examples of the monomer having a functional group include a monomer having a vinyl bond and a functional group such as acrylic acid or methacrylic acid.

The reactive elastomer may, for example, be a styrene-ethylene-butylene-styrene copolymer containing a carboxyl group and a styrene-ethylene copolymer such as a styrene-ethylene-butylene-styrene copolymer containing maleic anhydride. Butene-styrene copolymer (SEBS); styrene-butadiene copolymer containing carboxyl group, styrene-butadiene copolymer containing maleic anhydride, and saturated copolymerization of styrene-butadiene containing carboxyl group a styrene-butadiene copolymer such as a carboxyl group; a styrene-isoprene copolymer such as a carboxyl group-containing styrene-isoprene copolymer; and a carboxyl group-containing styrene-isoprene saturated copolymer; A styrene-based thermoplastic elastomer having a styrene-based block copolymer of oxy group and a styrene-ethylene-butene copolymer containing maleic anhydride; an acrylonitrile-butadiene copolymer containing a carboxyl group, and an amine group Modified acrylonitrile-butadiene copolymer and acrylonitrile-butadiene copolymer (NBR) such as hydrogenated carboxyl group acrylonitrile-butadiene copolymer; and amine modified polyol resin, amine modified benzene Oxygen resin, polyvinyl butyral resin, polyvinyl acetal resin, carboxyl-containing acrylic rubber, hydroxyl terminal saturation Polymerization of the polyester resin, the carboxyl terminus of saturated copolymer polyester resin and the like. Among them, a styrene-based thermoplastic elastomer is preferred from the viewpoint of heat resistance and the like, and SEBS is preferred. Further, "m-containing maleic anhydride" means an acid anhydride in a side chain.

These thermoplastic resins may be used alone or in combination of two or more.

Further, as the thermoplastic resin, a fluorine-containing thermoplastic resin (fluorine-containing thermoplastic resin) can also be used.

In SEBS, the mass ratio (sometimes referred to as the S/EB ratio) expressed by styrene/ethylene and butene is preferably 10/90 or more and less than 30/70, and is 15/85 to 25/75. good.

The thermosetting resin can be used as it is conventionally used in an adhesive layer. For example, urea resin, melamine resin, benzoguanamine resin, acetamidine Resin, phenol resin, resorcinol resin, xylene resin, furan resin, unsaturated polyester resin, diallyl citrate resin, isocyanate resin, epoxy resin, maleimide resin and ground resistance Nadimide resin and the like. These thermosetting resins may be used alone or in combination of two or more.

Further, as the thermosetting resin, a thermosetting resin containing fluorine (a thermosetting resin containing fluorine) may be used.

The reactive elastic material and/or the thermosetting resin may be added to the adhesive layer, and a thermoplastic resin other than the reactive elastic material may be further added.

Examples of the thermoplastic resin include polybutadiene, polyacrylonitrile, polyvinyl butyral, polyamine, polyamidimide, polyimide, polyester, and polyurethane. Acrylic rubber, etc.

Further, as the thermoplastic resin, a fluorine-containing thermoplastic resin (fluorine-containing thermoplastic resin) can also be used.

The resin content in the layer of the agent may be considered in consideration of the type of the resin, etc. Decide. For example, it is preferably 80 to 98% by mass, and more preferably 85 to 95% by mass. When it is less than the above lower limit value, there is a possibility that the strengths b and c are lowered after the heating and the molding flash characteristics are lowered. When the above upper limit is exceeded, it is difficult to obtain a blending balance with other raw materials. The content of the reactive elastomer in the resin is optional, and is preferably, for example, 50% by mass or more, more preferably 65% by mass or more, and still more preferably 80% by mass or more.

The curing agent can be appropriately determined depending on the type of the reactive elastic material and the thermosetting resin, and examples thereof include polyisocyanate.

The content of the curing agent in the subsequent layer can be appropriately determined in consideration of the types of the curing agent, the reactive elastic material, and the thermosetting resin. For example, it is preferably 0.5 to 10 parts by mass based on 100 parts by mass of the resin. It is also preferably, for example, 1 to 8 parts by weight or 2 to 7 parts by weight, depending on the demand.

The adhesive layer may contain various components such as a quality improver, a filler, a hardening accelerator, and an antioxidant, without departing from the effects of the present invention. The amount may be optionally 0.5 to 10 parts by mass, or 1 to 8 parts by weight or 2 to 7 parts by weight, based on 100 parts by mass of the resin.

As a quality improvement agent, a fluorine-containing additive is mentioned, for example. By containing a fluorine-containing additive, the peelability of the adhesive sheet can be improved in the peeling step described later.

Fluorine-containing additives are optional. For example, an anionic surfactant containing a perfluoroalkyl group sulfonate or a perfluoroalkyl group-containing carboxylate; and a perfluoroalkylalkylene oxide adduct, a fluorine-containing group, and a lipophilic property a fluorine-containing surfactant, a fluorine-containing group and a hydrophilic group-containing oligomer, a fluorine-containing group, a hydrophilic group, and a lipophilic group-containing oligomer, etc. A surfactant, etc., wherein a nonionic surfactant is preferred, and an oligomer containing a fluorine-containing group and a lipophilic group is preferred. The anionic surfactant is electrostatically interacted in the resin by the ionized functional group, and the degree of freedom of the surfactant is lowered to make it difficult to appear on the surface. The lipophilic group may be optionally exemplified by an alkyl group, an allyl group, a vinyl group, an alkyl ether group, an alkyl ester group, and an acrylate group. These fluorine-containing additives may be used alone or in combination of two or more.

The blended fluorine-containing additive may be a liquid or a solid. From the viewpoint of improving the fluorine recovery rate on the surface of the adhesive layer and improving the peelability, it is preferred to use a liquid at 25 ° C.

In the case of a suitable fluorine-containing additive, MEGAFAC F-552, F-554, and F-558 (made by DIC Corporation) containing a fluorine-containing group and a lipophilic group-containing oligomer which are liquid at 25 ° C are mentioned. )Wait.

In the subsequent layer, the content of the fluorine-containing additive may be optional with respect to 100 parts by mass of the resin. It is preferably 0.5 to 20 parts by mass, more preferably 0.7 to 15 parts by mass, more preferably 1 to 10 parts by mass, and still more preferably 1 to 7 parts by mass. When the amount is less than the above lower limit, there is a possibility that the peeling property is lowered. When the amount is less than the above upper limit value, the subsequent strength is insufficient and the molding flash characteristics are lowered.

When a reactive elastomer is used as the resin, the content of the fluorine-containing additive is preferably 0.5 to 20 parts by mass, preferably 0.7 to 15 parts by mass, more preferably 1 to 10 parts by mass, per 100 parts by mass of the reactive elastomer. It is preferably in the range of 1 to 7 parts by mass, and more preferably in the range of 2.5 to 5.0 parts by mass. When the amount is less than the above lower limit, the peeling property is lowered. When the amount is more than the above upper limit, the bonding strength is insufficient, and the molding flash property is lowered or the heating is described later. The strength a is not sufficient.

The content of the fluorine-containing additive in the subsequent layer can be appropriately determined in consideration of the kind of the fluorine-containing additive, the kind and amount of the resin, and the like. For example, in the adhesive layer, preferably 0.5 to 20% by mass, 0.7 to 15% by mass, preferably 1 to 10% by mass, more preferably 1 to 7% by mass, and more preferably 2.5 to 5.0% by mass. good. When the amount is less than the above lower limit, the peeling property is lowered. When the upper limit is exceeded, the strength b or c is insufficient after heating, and the molding flash property is lowered or the strength a is insufficient before heating. Full of enthusiasm.

In order to adjust the thermal expansion coefficient, thermal conductivity, surface viscosity, and adhesion of the adhesive layer, an inorganic or organic filler may be blended in the adhesive layer. Examples of the inorganic filler include pulverized cerium oxide, molten cerium oxide, aluminum oxide, titanium oxide, cerium oxide, magnesium oxide, calcium carbonate, titanium nitride, tantalum nitride, boron nitride, and titanium boride. a filler composed of tungsten boride, tantalum carbide, titanium carbide, zirconium carbide, molybdenum carbide, mica, zinc oxide, carbon black, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, and antimony trioxide, or the like The surface is introduced with a trimethylphosphonium group or the like. Further, examples of the organic filler include fillers composed of polyimine, polyamidoximine, polyetheretherketone, polyetherimine, polyesterimide, nylon, and an anthracene resin.

(After heating, strength a)

The strength a of the heating agent before the heating layer measured in the peeling test A is 0.07 N/20 mm or more, preferably 0.1 N/20 mm or more, and more desirably 0.15 N/20 mm or more. When it is more than the above lower limit value, it is good to adhere to the lead frame or the wiring board in the pasting step without performing heat treatment. The upper limit of the strength a before heating is not particularly limited.

On the other hand, the strength a before heating is an index indicating the adhesion of the adhesive layer before curing in the heat-bonding type back sheet.

<Peel Test A>

‧The copper plate with the gold-plated layer on the surface is attached to the board.

‧ A (20 mm wide) semiconductor device manufacturing back sheet was attached to the above-mentioned adhering sheet as a sample before heating at 25 ° C and a pressure of 0.37 N/mm.

‧ At the measurement temperature of 25 ° C, the peeling angle of 90 °, and the peeling speed of 50 mm / min, the film for manufacturing a semiconductor device for pre-heating was peeled off to calculate the maximum stress, and this was used as the heating strength a.

The backsheet used for the test may be, for example, a size of 20 mm × 100 mm. On the other hand, the adhesive strength can be measured by peeling the adhesive sheet from the end portion of the test piece (pre-heating sample) using a tensile tester or the like. Moreover, when preparing a back sheet, the material mixture may be applied and dried for about 3 minutes at an optional temperature and time of, for example, about 150 degrees.

As the adhering plate, for example, a nickel plating layer, a palladium plating layer, and a gold plating layer are sequentially provided on the copper plate.

(heating followed by strength b)

The subsequent strength of the subsequent layer of the agent layer measured by the peeling test B described below is 0.58 N/20 mm or more, preferably 0.70 N/20 mm or more, and more desirably 0.80 N/20 mm or more. As long as it is at least the above lower limit value, the molding flash can be satisfactorily suppressed. The peeling test B is a state in which the resin is filled into the mold in the sealing step and maintained at an arbitrary pressure (when held), that is, a state in which the deformation speed with respect to the adhesive layer is small. When the strength b after the heating is at least the above lower limit value, the molding flash during the holding can be satisfactorily suppressed. After heating The upper limit of the strength b is not particularly limited.

<Peel Test B>

‧ The pre-heating sample prepared in the above-mentioned <peel test A> was subjected to heat treatment at 175 ° C for 1 hour as a sample after heating.

‧ At the measurement temperature of 175 ° C, the peeling angle of 90 °, the peeling angle of 90 °, and the peeling speed of 10 mm / min, the adhesive sheet of the sample after heating was peeled off to calculate the maximum stress, and this was followed by the strength b after heating.

(heating followed by strength c)

The subsequent strength of the subsequent layer of the agent layer measured by the peeling test C described below is 1.17 N/20 mm or more, preferably 1.23 N/20 mm or more, and more preferably 1.30 N/20 mm or more. As long as it is at least the above lower limit value, the molding flash can be satisfactorily suppressed. The peeling test C is assuming that the resin is ejected into the mold in the sealing step (at the time of injection), that is, a state in which the deformation speed with respect to the adhesive layer is large. When the strength c after heating is equal to or higher than the above lower limit value, the molding flash at the time of injection can be satisfactorily suppressed. The upper limit of the strength c after heating is not particularly limited.

<Peel Test C>

‧ At the measurement temperature of 175 ° C, the peeling angle of 90 °, and the peeling speed of 500 mm / min, the succeeding sheet of the sample after heating prepared in the above-mentioned <peel test B> was peeled off to calculate the maximum stress, and this was used as the heating strength. c.

The surface layer fluorine recovery ratio calculated by the following formula (I) is preferably 70% or more, more preferably 80% or more, still more preferably 90% or more, and may be 100% or more. When the surface fluorine recovery rate is at least the above lower limit value, the peeling property can be improved. In addition, the surface fluorine recovery rate is as long as the above lower limit When the value is equal to or higher than the amount of the fluorine-containing additive which is excessively added to the adhesive layer, the strength a before the heating is appropriate, and the adhesion to the lead frame or the wiring substrate in the adhesion step is also sufficient.

Further, the surface fluorine recovery rate is adjusted by combining the type and amount of the fluorine-containing additive and the type and amount of the resin.

Surface fluorine recovery rate (%) = surface fluorine content after recovery α ÷ initial surface fluorine content rate β × 100... (I)

[In the formula (I), the surface fluorine content after recovery is α. The electrode layer is subjected to a plasma treatment for 1 minute under an argon atmosphere at a temperature of 450 W, and then the adhesive layer is heated at 220 ° C for 15 minutes. The surface fluorine content (after%) of the subsequent adhesive layer. The initial surface fluorine content rate β is the surface fluorine content (atom%) of the adhesive layer before the plasma treatment. ]

The surface fluorine content α after the recovery is preferably 18 atom% or more, and more preferably 20 atom% or more. When the amount is less than the above lower limit, there is a possibility that the peelability of the adhesive sheet is lowered.

The initial surface fluorine content ratio β is preferably 50 atom% or less, and preferably 30 atom% or less. When the above upper limit value is exceeded, there is a possibility that the strength is insufficient before heating.

In addition, the surface fluorine content is a value obtained by measuring the surface of the adhesive layer under the following conditions using a scanning X-ray photoelectron spectroscopy analyzer (XPS/ESCA, Quantera SXM, manufactured by ULVAC-PHI Co., Ltd.). The surface fluorine content (atom%) is represented by a content ratio of 100 atom% with respect to a total of carbon, nitrogen, oxygen, fluorine, antimony, and gold.

Determination conditions of surface fluorine content: X-ray source: monochromatic AlK α

X-ray output: 25.0W

X-ray irradiation diameter: Φ100μm

Measurement area: Point 100μm

Photoelectron acceptance angle: 45deg

Wide-angle scan: 280.0e; 1.000eV/Step

In the present invention, the thickness of the adhesive layer is not particularly limited and may be optional. For example, it can be set at 2 to 20 μm. The thickness after drying is also in the range of 2 to 10 μm.

The subsequent sheet may have a configuration in which a peelable protective film is adhered to the adhesive layer, and the protective film is peeled off before being attached to a lead frame or a wiring board. At this time, it is possible to prevent the adhesive layer from being damaged between the manufacture and use of the adhesive sheet.

The protective film may be any one having mold release property. For example, a film of polyester, polyethylene, polypropylene, polyethylene terephthalate or the like, or a film obtained by demolding the surface of the film with a silicone resin or a fluorine compound, or the like can be mentioned.

Next, the manufacturing method of the sheet may be optionally performed by a casting method such as coating an adhesive on a substrate and drying it; or temporarily applying an adhesive to the release film and drying it to be transferred to the substrate. The layering method on the top is preferred. Preferably, the component constituting the adhesive layer is dissolved in an organic solvent, for example, selected from aromatic systems such as toluene, xylene, and chlorobenzene; and ketone systems such as acetone, methyl ethyl ketone, and methyl isobutyl ketone; An aprotic polar solvent such as dimethylformamide, dimethylacetamide or N-methylpyrrolidone, and tetrahydrofuran The individual substances in the group or a mixture of these are used as an adhesive coating liquid.

Manufacturing method of semiconductor using the adhesive sheet of the present invention a step of attaching a bonding sheet to a lead frame or a wiring substrate; a die attaching step of mounting the semiconductor element to the lead frame or the wiring substrate; a sealing step of sealing the semiconductor element with a sealing resin; and a peeling step, The bonding sheet is peeled off from the lead frame or the wiring substrate after the sealing step.

Hereinafter, the semiconductor device using the bonding sheet of the present invention is used. An example of the manufacturing method will be described with reference to Figs. Fig. 1 is a plan view of a lead frame as seen from the side on which the semiconductor element is mounted. 2(a) to (f) are step diagrams showing a method of manufacturing a QFN package using the lead frame shown in Fig. 1, and are a cross-sectional view taken along line A-A' of the lead frame of Fig. 1.

In the following description, a case where a QFN package is manufactured by using a bonding sheet having an adhesive layer and a lead frame as a bonding target containing a fluorine-containing additive, a reactive elastomer, and hardener.

The method of manufacturing a semiconductor device of the present invention has at least the following Step: a bonding step of attaching the bonding sheet to the lead frame or the wiring substrate; a plasma cleaning step; a heating step of heating the adhesive layer; and a peeling step of peeling the adhesive sheet.

In the present embodiment, a method of manufacturing a semiconductor device having a step of attaching a bonding sheet to a lead frame, and a die attaching step of mounting a semiconductor element to a lead frame; a plasma cleaning step will be described Performing a plasma treatment on the lead frame; a wire bonding step electrically connecting the semiconductor component to the lead of the lead frame; and a sealing step to seal the resin to the semiconductor The body element is sealed; the stripping step is performed by peeling the back sheet from the lead frame to obtain a QFN unit; and a cutting step of dividing the QFN unit to obtain a QFN package.

First, prepare the lead frame of the schematic configuration shown in FIG. 20. In the lead frame 20, a plurality of semiconductor element mounting portions (die pad portions) 21 for mounting semiconductor elements such as IC chips in a matrix form are formed, and a plurality of leads 22 are formed along the outer periphery of each of the semiconductor element mounting portions 21.

The material of the lead frame 20 can be arbitrarily used as known in the art. For example, a nickel plating layer, a palladium plating layer, and a gold plating layer are provided on the surface of a copper alloy plate or a copper plate.

(with the steps)

As shown in Fig. 2(a), the bonding sheet 10 is adhered to the lead frame 20 on the one surface (lower surface) of the lead frame 20 to form an adhesive layer (not shown) (adhering step). The method of attaching the adhesive sheet 10 to the lead frame 20 may be optionally carried out by a lamination method or the like. The temperature and ambient temperature of the film 10 in this step may be optional, and may be, for example, normal temperature (5 to 35 ° C). Since the adhesive sheet 10 has a specific heating front-receiving strength a, it can be adhered to the lead frame 20 well at normal temperature.

However, once warpage occurs in the lead frame 20 in this step, the positioning in the die attaching step or the wire bonding step becomes difficult and the productivity of the QFN package is lowered.

(grain attachment step)

As shown in FIG. 2(b), the semiconductor element 30 such as an IC chip is placed on the semiconductor element mounting portion 21 on the side of the lead frame 20 that is not attached to the bonding sheet 10 via a die attaching agent (not shown). At this time, the lead frame 20 has suppressed the warpage, so Easy to locate. Moreover, the semiconductor element 30 can be correctly placed at a predetermined position. Then, the temperature is selected to be in the range of, for example, about 100 to 200 ° C, and preferably about 150 to 180 ° C, and the die attaching agent is cured, and the semiconductor element 30 is fixedly mounted on the semiconductor element mounting portion 21 (grain attached) The agent is hardened. The above is the grain attachment step). At this time, the adhesive sheet 10 is firmly adhered to the lead frame by the adhesion of the adhesive layer. Further, the fluorine-containing additive in the adhesive layer, once heated in the grain attaching step, is localized on the surface of the adhesive layer.

(plasma washing step)

When the outgas component generated from the adhesive sheet 10 or the die attaching agent or the like adheres to the lead frame 20 or the semiconductor element 30, it is easy to cause a decrease in yield due to wire bonding failure in the wire bonding step. Thus, the lead frame 20 or the semiconductor element 30 is subjected to a plasma treatment (plasma cleaning step) after the die attach step and before the wire bonding step. The plasma processing is, for example, a lead frame 20 (hereinafter sometimes referred to as a semi-finished product) in which the semiconductor element 30 is mounted on the adhesive sheet 10 in an environment such as argon gas or a mixed gas of argon gas and hydrogen gas. A method of performing plasma irradiation. The irradiation output of the plasma in the plasma treatment may be optional, and may be, for example, 150 to 600 W or 300 to 600 W. Further, the time of the plasma treatment may be optional, and may be, for example, 0.01 to 5 minutes or 0.5 to 5 minutes.

Once the plasma treatment is applied, the surface layer of the original fluorine-containing additive is removed at the portion not covered by the lead frame, and the amount of the fluorine-containing additive on the surface of the adhesive layer is reduced. At this point in time, on the exposed surface of the adhesive layer, the amount of the fluorine-containing additive used to improve the peelability will It becomes insufficient, and the peelability of the adhesive sheet 10 is lowered.

(wire bonding step)

As shown in Fig. 2(c), the semiconductor element 30 and the lead 22 of the lead frame 20 are electrically connected by a bonding wire 31 such as a gold wire (wire bonding step). This step is carried out while heating the semi-finished product on the heater assembly to an optional temperature of, for example, about 150 to 250 ° C and preferably about 190 to 250 ° C. The heating time in this step can be, for example, 5 to 30 minutes and preferably 8 to 22 minutes.

Once the semi-finished product is heated in the wire bonding step, the fluorine-containing additive dispersed in the adhesive layer migrates to the surface of the adhesive layer. Here, in the present invention, the surface fluorine recovery rate of the adhesive layer is preferably 70% or more. At this time, the amount of the fluorine-containing additive on the surface of the adhesive layer becomes an appropriate amount sufficient to improve the peelability. Further, the adhesive sheet 10 is easily peeled off from the lead frame 20 and the sealing resin 40 in the peeling step described later.

(sealing step)

As shown in Fig. 2(d), the semi-finished product shown in Fig. 2(c) is placed in a mold, and is sealed by using a sealing resin (molded material) to be filled in the mold. At the time of the ejection, since the adhesive layer has a specific heating and subsequent strength c, it does not peel off from the lead frame, and the molding flash can be suppressed. After the random amount of the resin is filled in the mold, the inside of the mold is maintained under an arbitrary pressure, whereby the semiconductor element 30 is sealed with the sealing resin 40 (sealing step). At the time of this retention, since the adhesive layer has a specific heating and subsequent strength b, molding flash can be suppressed.

As the sealing resin, those known to the public can be used. Epoxy tree a mixture of a fat and an inorganic filler or the like.

(peeling step)

As shown in FIG. 2(e), the adhesive sheet 10 is peeled off from the sealing resin 40 and the lead frame 20. Thereby, the QFN unit 60 including the complex QFN package 50 can be obtained (peeling step). At this time, since a sufficient amount of the fluorine-containing additive is present on the surface of the adhesive layer, the adhesive sheet 10 can be peeled off from the lead frame 20 and the sealing resin 40 without causing residual glue.

As shown in FIG. 2(f), the QFN unit 60 is cut along the periphery of each QFN package 50. Thereby, the divided complex QFN package 50 can be produced (cutting step).

As described above, by using the bonding sheet 10 of the present embodiment to manufacture a semiconductor device such as a QFN package, the bonding sheet 10 can be attached to the lead frame 20 even if the heat treatment in the bonding step is omitted, and the lead frame 20 can be suppressed from being warped. song. Further, since the adhesive layer can be hardened by the die attaching agent hardening treatment, the heat treatment in the conventional bonding step can be omitted, and the productivity can be improved. Further, since the heating of the adhesive layer is followed by the strength b in a specific range and the heating of the adhesive layer is followed by the strength c in a specific range, the molding flash can be suppressed in the sealing step. Therefore, work efficiency can be improved and productivity of the semiconductor device can be improved.

On the other hand, in the above embodiment, the manufacturing method of the QFN package using the lead frame is described as an example, but the present invention is not limited thereto. It is also applicable to a method of manufacturing a semiconductor device other than a QFN package using a lead frame and a method of manufacturing a semiconductor device using the wiring substrate.

Example

The invention is illustrated by the following examples, but the invention is not limited by the examples.

(using raw materials) <Reactive Elastomers>

TUFTEC M-1943: SEBS containing maleic anhydride (styrene-ethylene-butylene-styrene copolymer containing maleic anhydride), S/EB ratio = 20/80, acid value = 10 mg CH ₃ ONa /g, manufactured by Asahi Kasei Chemicals Co., Ltd.

TUFTEC M-1913: SEBS containing maleic anhydride, S/EB ratio = 30/70, acid value = 10 mg CH ₃ ONa / g, manufactured by Asahi Kasei Chemicals Co., Ltd.

<Other resin materials>

Oxygen-based adhesive: SD-4587L, storage elastic modulus 1.1×10 ⁴ N/cm ² , manufactured by Toray Dow Corning Co., Ltd.

Butyl acrylate (BA): butyl acrylate, manufactured by Mitsubishi Chemical Corporation.

Acrylic acid (AA): and light grade reagents.

Glycidyl methacrylate (GMA): NISSAN BLEMMER G, manufactured by Nippon Oil Co., Ltd.

<Fluorine Additive>

MEGAFAC F-554: a nonionic surfactant containing a fluorine-containing group and a lipophilic group-containing oligomer, which is a liquid at 25 ° C, manufactured by DIC Corporation.

<hardener>

DURANATE TSA-100: Isocyanate, Asahi Kasei Chemicals Co., Ltd. Limited company system.

<antioxidant>

IRGANOX1010FF: manufactured by BASF.

(Examples 1 to 3, Comparative Example 1)

According to the composition of Table 1, each raw material was dispersed to an appropriate amount of toluene to prepare an adhesive coating liquid. TUFTEC M-1943, M-1911 were dissolved in toluene.

Next, a polyimide film (manufactured by Toray DuPont Co., Ltd., trade name: KAPTON 100EN, thickness 25 μm, glass transition temperature of 300 ° C or higher, thermal expansion coefficient: 16 ppm/° C.) was prepared as a heat resistant substrate. The above-mentioned adhesive coating liquid was applied thereon to a thickness of 5 μm after drying. However, the size of the succeeding sheet is 60 mm in length and 50 mm in width. After applying the adhesive coating liquid, it was dried at 150 ° C for 3 minutes to obtain a continuous sheet of each example. The obtained sheet was measured for the strength a before heating, the strength b after heating, the strength c after heating, the amount of warpage, and the number of resin leakage, and the results are shown in Table 1.

(Comparative Example 2)

A back sheet was produced in the same manner as in Example 1 except that the adhesive layer was set to have a thickness of 5 μm as the above-mentioned oxygen-based adhesive. The obtained sheet was measured for the strength a before heating, the strength b after heating, the strength c after heating, the amount of warpage, and the number of resin leakage, and the results are shown in Table 1.

However, the film of this example is a room temperature type.

(Comparative Example 3)

BA 94.28 parts by mass, AA 1.92 parts by mass, and GMA 3.80 parts by mass were dispersed in ethyl acetate to prepare a dispersion having a solid content of 30% by mass. The dispersion was used as an initiator by using V-65 (and a light-grade reagent) as an initiator at 0.25 mass% with respect to the monomer, and was polymerized in a soup bath at 50 ° C for 20 hours after nitrogen substitution to obtain an acrylic acid dispersed. Adhesive solution before the adhesive.

According to the composition of Table 1, an antioxidant was added to the precursor liquid, and methyl ethyl ketone was further added to prepare an acrylic pressure-sensitive adhesive coating liquid having a solid content of 20% by mass.

A back sheet was obtained in the same manner as in Example 1 except that the adhesive coating liquid was replaced with the above acrylic pressure-sensitive adhesive coating liquid. The obtained sheet was measured for the strength a before heating, the strength b after heating, the strength c after heating, the amount of warpage, and the number of resin leakage, and the results are shown in Table 1.

However, the film of this example is a room temperature type.

(test methods) <Measurement of strength a before heating (peel test A)>

As a board to be attached, Pd-PPF board (copper base plating board ELA601, nickel plating layer, palladium plating layer and gold plating layer on the copper plate), length 100mm × width 25mm × thickness 125μm, Xinguang Electric Industry Co., Ltd. Company system). Using a tabletop laminator (MAII-700, manufactured by Daisei Film Press Co., Ltd.), the adhesive sheet (20 mm × 100 mm) of each example was attached to the adhesive layer with the adhesive layer facing the adhesive layer. As a sample before heating. The bonding conditions were 25 ° C, a pressure of 0.37 N/mm, and a speed of 1.0 mm/min.

Using a universal tensile tester (AGS-100B, manufactured by Shimadzu Corporation), measuring temperature at 25 ° C, peeling angle of 90 ° and peeling speed The sheet of the sample before heating was peeled off at 50 mm/min to determine the maximum stress.

On the other hand, in Comparative Example 1, the adhesion could not be performed under the above-mentioned adhesion conditions. Therefore, the strength a before heating was not measured. Therefore, in Comparative Example 1, the film was attached by a table laminator while being heated to 100 ° C, and this was subjected to the subsequent test.

<Measurement of strength b after heating (peeling test B)>

The pre-heating sample prepared in the above-mentioned <peeling test A> was subjected to heat treatment at 175 ° C for 1 hour as a sample after heating. A thermostat (PERFECT OVEN PHH-201, manufactured by ESPEC Co., Ltd.) was used for the heat treatment.

The heated sample was placed on a hot plate (EC-1200, manufactured by Sakae Shillay Co., Ltd.) adjusted to 175 ° C, and the temperature was measured at 175 ° C using a universal tensile tester (AGS-100B, manufactured by Shimadzu Corporation). The sheet of the sample after heating was peeled off at an angle of 90° and a peeling speed of 10 mm/min to measure the maximum stress.

<Measurement of strength c after heating (peel test C)>

The maximum stress was measured in the same manner as the above-mentioned <peel test B> except that the peeling speed was changed to 500 mm/min.

<Method for Measuring Resin Leakage Number>

As a lead frame, the following specifications are applied to the copper plate in order to provide a nickel plating layer, a palladium plating layer, and a gold plating layer: (32QFN (CD194, plating; PD2L+Au) 32LQFNPADSIZE3.0SQMM, manufactured by Shinko Electric Industrial Co., Ltd. ). Using a table laminator (made by Dacheng Laminator Co., Ltd.), at 25 ° C, a speed of 1.0 m / min and a pressure of 0.37 N / mm, The lead frame is attached to the back sheet (50 mm x 60 mm) (adhering step). On the other hand, in Comparative Example 1, since the adhesion could not be performed under the above-described adhesion conditions, the test was carried out by a table laminator while heating to 100 ° C.

The lead frame with the adhesive sheet attached thereto was placed in a thermostat (PERFECT OVEN PHH-201, manufactured by ESPEC Co., Ltd.), and heated at 175 ° C for 1 hour to harden the adhesive layer (corresponding to the die attaching step). The die attach agent hardens).

The succeeding sheet was placed on the lower side, and the lead frame to which the adhesive sheet was attached was placed on a hot plate (EC-1200, manufactured by Sakae Shillai Co., Ltd.), and heated at 220 ° C for 15 minutes (corresponding to a wire bonding step).

After the wire bonding step, a transfer molding press (TEP12-16, manufactured by Fujisawa Seiki Co., Ltd.) was used, and under the conditions of a heating temperature of 175 ° C, a transfer pressure of 69 MPa, and a clamping pressure of 14 MPa, the adhesive sheet was attached. The lead frame was sealed with a sealing resin (KMC-3520L, manufactured by Shin-Etsu Chemical Co., Ltd.) (sealing step). After the sealing step, the mixture was allowed to stand at 25 ° C for 24 hours, and then heated at 25 ° C, a peeling angle of 90 °, and a peeling speed of 50 mm/min using a universal tensile tester (AGS-100B, manufactured by Shimadzu Corporation). The peel of the sample was peeled off.

After peeling off the adhesive sheet, the surface of the lead frame and the adhesive layer of the adhesive sheet were observed with a digital microscope (VHX-500, transmitted light, 100 times, manufactured by Keyence Co., Ltd.) to confirm the presence or absence of resin leakage. The table shows the number of QFN packages in which resin leakage was confirmed in one lead frame (64 QFN packages).

Lead frame specifications

Dimensions: 55mm × 58mm

Thickness: 125μm

Uses: QFN

QFN arrangement: 8 × 8 (64) matrix

Package size: 5mm × 5mm

Number of bolts: 32

≪ warpage measurement ≫

The adhesive sheets of the respective examples were attached to the lead frame in the same manner as in the above <Method for Measuring Resin Leakage Number>. In Comparative Example 1, since the adhesion could not be performed under the above-described adhesion conditions, it was adhered to the table laminator while heating to 100 °C.

The lead frame to which the adhesive sheet was attached was placed on a horizontal surface in an environment of 25 ° C and a humidity of 60% RH, and the degree of separation between the horizontal plane and the periphery of the lead frame was observed. The maximum distance between the horizontal plane and the circumference of the lead frame is the amount of warpage. On the other hand, an observation microscope (STM6-LM, manufactured by OLYMPUS Co., Ltd.) was used for the observation.

[Table 1]

As shown in Table 1, the examples 1 to 3 to which the present invention is applied are before heating. Then, the strength a is 0.11 N/20 mm or more, and it can be attached to the lead frame even if heat treatment is not performed. Further, in Examples 1 to 3 in which the strength b and the subsequent strength c after heating were within the range of the present invention, the amount of warpage was small and no resin leakage was observed.

On the other hand, in Comparative Example 1 which does not have the adhesion at normal temperature, the amount of warpage is remarkably large. In Comparative Examples 2 to 3 in which the strengths b and c were outside the range of the present invention after heating, a resin leak was found.

From these results, it was confirmed that by applying the present invention, molding flash can be prevented and warpage of the lead frame can be suppressed.

As described above, in the present invention, it is possible to provide an adhesive sheet for manufacturing a semiconductor device which can suppress the molding flash and can improve the productivity of the semiconductor device.

10‧‧‧Next film

20‧‧‧ lead frame

21‧‧‧Semiconductor component mounting section (die pad section)

22‧‧‧ leads

30‧‧‧Semiconductor components

31‧‧‧Connected wire

40‧‧‧ sealing resin

50‧‧‧QFN package

60‧‧‧QFN unit

Claims (15)

An adhesive sheet for manufacturing a semiconductor device, comprising a substrate and a thermosetting adhesive layer provided on one surface of the substrate, and being adhered to a lead frame or a wiring substrate of a semiconductor device, and the thermosetting type The adhesive layer contains a styrene-ethylene-butylene-styrene copolymer; the adhesive sheet for manufacturing a semiconductor device is characterized in that the adhesive layer has a strength a of 0.07 N/20 mm before the heating measured in the peeling test A described below. The heating strength measured by the peeling test B described below is 0.58 N/20 mm or more, and the heating strength measured by the peeling test C described below is 1.17 N/20 mm or more; and the styrene-ethylene described above. - the butene-styrene copolymer has a mass ratio of styrene/ethylene and butene of 15/85 to 25/75; <peel test A> ‧ the copper plate with a gold-plated layer on the surface is attached to the board; A 25 mm-thick semiconductor device manufacturing adhesive sheet was attached to the above-mentioned adhering sheet as a pre-heating sample at 25 ° C and a pressure of 0.37 N/mm. ‧ The measurement temperature was 25 ° C, the peeling angle was 90 °, and the peeling speed was 50 mm / Min, the aforementioned pre-heating sample The semiconductor device fabrication then release sheet in order to calculate the maximum stress, and as the adhesive strength before heating a; <Peel Test B> ‧ before heating the sample for peel test A prepared at 175 ℃ The heat treatment was performed for 1 hour as a sample after heating; ‧ at the measurement temperature of 175 ° C, the peeling angle of 90 °, and the peeling speed of 10 mm/min, the film for manufacturing the semiconductor device after heating was peeled off to calculate the maximum stress, The heating strength was followed by the strength b; <peel test C> ‧ at the measurement temperature of 175 ° C, the peeling angle of 90 °, and the peeling speed of 500 mm / min, the semiconductor device for heating the sample prepared in the peeling test B was used. The sheet is then peeled off to calculate the maximum stress, which is followed by heating followed by strength c. The adhesive sheet for semiconductor device manufacturing according to the first aspect of the invention is characterized in that the strength a before heating is 0.1 N/20 mm or more, the strength b after heating is 0.70 N/20 mm or more, and the strength c after heating is 1.23 N. /20mm or more. The film for manufacturing a semiconductor device according to the first aspect of the invention is characterized in that the strength a before heating is 0.15 N/20 mm or more, the strength b after heating is 0.80 N/20 mm or more, and the strength c after heating is 1.30 N. /20mm or more. The adhesive sheet for semiconductor device manufacturing according to the first aspect of the invention, wherein the adhesive layer contains a resin, and the resin content is 80 to 98% by mass in the adhesive layer. The adhesive sheet for semiconductor device manufacturing according to the first aspect of the invention, wherein the substrate is a heat-resistant resin film or a metal foil having a thickness of 10 to 100 μm and a thermal expansion coefficient of 150 to 250 ° C of 5 to 50 ppm/° C. The adhesive sheet for producing a semiconductor device according to the first aspect of the invention, wherein the styrene-ethylene-butylene-styrene copolymer content of the adhesive layer is 50% by mass or more. The adhesive sheet for manufacturing a semiconductor device according to the first aspect of the invention, wherein the resin contained in the adhesive layer is composed only of the styrene-ethylene-butylene-styrene copolymer, and the adhesive layer contains a fluorine-containing additive and is resistant. At least one of the oxidizing agent and the curing agent, the content of the fluorine-containing additive is 0.5 to 20% by mass in the adhesive layer, and the antioxidant is 0.5 to 10 parts by mass based on 100 parts by mass of the resin, and the curing agent is 100 parts by mass relative to the resin. It is 0.5 to 10 parts by mass. The adhesive sheet for manufacturing a semiconductor device according to the first aspect of the invention, wherein the adhesive layer contains a fluorine-containing additive and the additive is 1 to 7% by mass in the adhesive layer, and the fluorine-containing additive is selected from the group consisting of: containing perfluoro Alkyl sulfonate, perfluoroalkyl-containing carboxylate, perfluoroalkylalkylene oxide adduct, fluorine-containing and lipophilic group-containing oligomer, fluorine-containing group and hydrophilic group A group consisting of an oligomer, an oligomer containing a fluorine-containing group, a hydrophilic group, and a lipophilic group. The adhesive sheet for manufacturing a semiconductor device according to claim 1, wherein the adhesive layer contains a resin selected from the group consisting of urea resin, melamine resin, benzoguanamine resin, and acetamidine. Resin, phenol resin, resorcinol resin, xylene resin, furan resin, unsaturated polyester resin, diallyl citrate resin, isocyanate resin, epoxy resin, maleimide resin and ground resistance At least one thermosetting resin in the group consisting of nadimide resins. A semiconductor device comprising the adhesive sheet of the first aspect of the patent application, and a lead frame or a wiring substrate. The semiconductor device according to claim 10, wherein the ratio of the following bonding strength Sa to the bonding strength Sb is 1.5 or more, followed by the strength Sa: the bonding strength between the substrate and the adhesive layer, and then the strength Sb: the sealing resin and the lead frame The bonding strength with the adhesive layer or the bonding strength of the sealing resin and the wiring substrate and the adhesive layer. A method of manufacturing a semiconductor device using the substrate for manufacturing a semiconductor device according to the first aspect of the invention; the method of manufacturing the method comprising the step of: attaching the substrate for manufacturing the semiconductor device a lead frame or a wiring substrate; a die attaching step of mounting the semiconductor element to the lead frame or the wiring substrate; a sealing step of sealing the semiconductor element with a sealing resin; and a peeling step, after the sealing step, The back sheet for semiconductor device manufacturing is peeled off from the lead frame or the wiring board. The method of manufacturing a semiconductor device according to claim 12, further comprising a plasma cleaning step and a wire bonding step between the die attaching step and the sealing step. A method of manufacturing a semiconductor device according to claim 13 wherein The plasma cleaning step is carried out by irradiating the plasma at a temperature of 150 to 600 W and a plasma treatment time of 0.01 to 5 minutes. In the method of manufacturing a semiconductor device according to claim 13, in the wire bonding step, the heating is performed at 150 to 250 ° C for 5 to 30 minutes.