TWI492122B - Touch sensing device and manufacturing method thereof - Google Patents

Touch sensing device and manufacturing method thereof Download PDF

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TWI492122B
TWI492122B TW102132617A TW102132617A TWI492122B TW I492122 B TWI492122 B TW I492122B TW 102132617 A TW102132617 A TW 102132617A TW 102132617 A TW102132617 A TW 102132617A TW I492122 B TWI492122 B TW I492122B
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Taiwan
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layer
peripheral
index matching
sensing device
touch sensing
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TW102132617A
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Chinese (zh)
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TW201445392A (en
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Chan Hao Tseng
Yung Pei Chen
Ching Shan Lin
Yu Jen Chen
Ssu Hsiang Peng
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Tpk Glass Solutions Xiamen Inc
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Description

觸控感測裝置及其製作方法Touch sensing device and manufacturing method thereof

本發明係關於一種輸入介面及其製作方法,尤指一種觸控感測裝置與其製作方法。The invention relates to an input interface and a manufacturing method thereof, in particular to a touch sensing device and a manufacturing method thereof.

觸控技術近年來蓬勃發展,許多消費性電子產品均有與觸控功能結合的產品問世。目前觸控面板的技術中較常見包括電阻式、電容式以及光學式等。其中電容式觸控面板由於具有高準確率、多點觸控、高耐用性以及高觸控解析度等特點,已逐漸成為目前中高階消費性電子產品使用之主流觸控技術。Touch technology has boomed in recent years, and many consumer electronics products have been introduced with touch functions. Currently, touch panel technology is more commonly used in the form of resistive, capacitive, and optical. Among them, capacitive touch panels have become the mainstream touch technology used in middle and high-end consumer electronic products due to their high accuracy, multi-touch, high durability and high touch resolution.

習知的觸控感測裝置表面區域可大略分為透視部及周邊部,周邊部位於透視部之至少一側。透視部設置有用於觸控感應的感測層等元件。周邊部設置有用於信號傳遞的周邊引線等元件。一般來說,透視部與周邊部的元件因其功能或材料的不同而分開製作。為提高產品品質及良率,因應不同需求而需要額外對應設置不同元件,例如,為避免周邊引線及感測層被氧化或受其他製程的影響,需要分別在周邊引線及感測層上設置保護層;為提高觸控感測裝置的視覺外觀效果,需要在透視部對應設置光學補償等功能元件,如此導致製程及結構複雜化。The surface area of the conventional touch sensing device can be roughly divided into a see-through portion and a peripheral portion, and the peripheral portion is located on at least one side of the see-through portion. The see-through portion is provided with components such as a sensing layer for touch sensing. Components such as peripheral leads for signal transmission are provided in the peripheral portion. Generally, the elements of the see-through portion and the peripheral portion are separately manufactured due to their functions or materials. In order to improve product quality and yield, different components need to be set up according to different requirements. For example, in order to avoid oxidation of the peripheral leads and the sensing layer or other processes, it is necessary to separately protect the peripheral leads and the sensing layer. In order to improve the visual appearance of the touch sensing device, it is necessary to provide functional components such as optical compensation in the see-through portion, which complicates the process and structure.

本發明提供一種觸控感測裝置及其製作方法,利用同一元件的設 置可達成兩種使用目的,故可簡化製程步驟及結構。The invention provides a touch sensing device and a manufacturing method thereof, which utilize the same component The two purposes of use can be achieved, so that the process steps and structure can be simplified.

藉此,本發明之一較佳實施例提供一種觸控感測裝置,包括基板、周邊引線、橋接元件、導電圖案層、絕緣層與折射率匹配保護層。基板包括一透視部及一周邊部,周邊部位於透視部之至少一側。周邊引線設置於周邊部上。橋接元件設置於透視部上。導電圖案層設置於透視部上,且導電圖案層包括一圖案部分與一非圖案部分,圖案部分包括至少一第一軸向電極以及複數個第二導電單元,第一軸向電極與部分之周邊引線電性連接,相鄰第二導電單元透過橋接元件電性連接,且第二導電單元與另一部分之周邊引線電性連接。絕緣層包括一第一部分以及一第二部分,第一部分係覆蓋於周邊引線上,第二部分係設置於橋接元件與導電圖案層之間。折射率匹配保護層覆蓋於導電圖案層上,且折射率匹配保護層的設置使圖案部分與非圖案部分的折射率相匹配。Accordingly, a preferred embodiment of the present invention provides a touch sensing device including a substrate, a peripheral lead, a bridging element, a conductive pattern layer, an insulating layer, and an index matching protective layer. The substrate includes a see-through portion and a peripheral portion, and the peripheral portion is located on at least one side of the see-through portion. The peripheral leads are disposed on the peripheral portion. The bridging element is disposed on the see-through portion. The conductive pattern layer is disposed on the see-through portion, and the conductive pattern layer comprises a pattern portion and a non-pattern portion, the pattern portion includes at least one first axial electrode and a plurality of second conductive units, the first axial electrode and the periphery of the portion The leads are electrically connected, the adjacent second conductive units are electrically connected through the bridge elements, and the second conductive units are electrically connected to the peripheral leads of the other portion. The insulating layer includes a first portion and a second portion. The first portion is covered on the peripheral lead, and the second portion is disposed between the bridging element and the conductive pattern layer. The index matching protective layer covers the conductive pattern layer, and the refractive index matching protective layer is disposed such that the pattern portion matches the refractive index of the non-pattern portion.

本發明之另一較佳實施例提供一種觸控感測裝置的製作方法,包括下列步驟。首先,提供一基板,基板包括一透視部以及一周邊部,周邊部位於透視部之至少一側。然後,於周邊部上形成一周邊引線,於透視部上形成一橋接元件。之後,於透視部上形成一導電圖案層,導電圖案層包括一圖案部分與一非圖案部分,圖案部分包括至少一第一軸向電極以及複數個第二導電單元,第一軸向電極與部分之周邊引線電性連接,相鄰第二導電單元透過橋接元件電性連接,且第二導電單元係與另一部分之周邊引線電性連接。然後,形成一絕緣層,絕緣層包括一第一部分及一第二部分,第一部分覆蓋於周邊引線上,且第二部分設置於橋接元件與導電圖案層之間。最後,形成一折射率匹配保護層覆蓋於導電圖案層之上,且折射率匹配保護層的設置使該圖案部分與該非圖案部分的折射率相匹配。Another preferred embodiment of the present invention provides a method of fabricating a touch sensing device, including the following steps. First, a substrate is provided, the substrate including a see-through portion and a peripheral portion, the peripheral portion being located on at least one side of the see-through portion. Then, a peripheral lead is formed on the peripheral portion to form a bridging member on the see-through portion. Thereafter, a conductive pattern layer is formed on the see-through portion, the conductive pattern layer includes a pattern portion and a non-pattern portion, the pattern portion includes at least one first axial electrode and a plurality of second conductive units, the first axial electrode and the portion The peripheral leads are electrically connected, the adjacent second conductive units are electrically connected through the bridge elements, and the second conductive units are electrically connected to the peripheral leads of the other portion. Then, an insulating layer is formed. The insulating layer includes a first portion and a second portion. The first portion covers the peripheral leads, and the second portion is disposed between the bridging element and the conductive pattern layer. Finally, an index matching protective layer is formed overlying the conductive pattern layer, and the index matching protective layer is disposed such that the pattern portion matches the refractive index of the non-pattern portion.

本發明之觸控感測裝置及其製作方法,同一絕緣層之第一部分與第二部分分別位於周邊部與透視部上,絕緣層之第一部分在周邊部用於周邊引線的保護層的作用,絕緣層之第二部分在透視部用於使導電圖案層之第一軸向電極與橋接元件相互絕緣的作用。另外,折射率匹配保護層可使導電圖案層的圖案部分與該非圖案部分的折射率相匹配,對導電圖案層同時具有折射率匹配以及保護效果,藉此,利用同一元件的設置可達成兩種使用目的,故可簡化製程步驟及結構。In the touch sensing device of the present invention and the manufacturing method thereof, the first portion and the second portion of the same insulating layer are respectively located on the peripheral portion and the see-through portion, and the first portion of the insulating layer is used for the protective layer of the peripheral lead at the peripheral portion. The second portion of the insulating layer serves to insulate the first axial electrode of the conductive pattern layer from the bridging element in the see-through portion. In addition, the index matching protective layer can match the pattern portion of the conductive pattern layer with the refractive index of the non-pattern portion, and has the refractive index matching and the protective effect on the conductive pattern layer, thereby achieving two kinds of settings by using the same component. The purpose of use is to simplify the process steps and structure.

100‧‧‧觸控感測裝置100‧‧‧Touch sensing device

110‧‧‧基板110‧‧‧Substrate

120‧‧‧遮光層120‧‧‧ shading layer

130‧‧‧折射率匹配層130‧‧‧index matching layer

140‧‧‧金屬層140‧‧‧metal layer

140B‧‧‧橋接元件140B‧‧‧Bridge components

140T‧‧‧周邊引線140T‧‧‧ peripheral leads

150‧‧‧絕緣層150‧‧‧Insulation

151‧‧‧第一部分151‧‧‧Part 1

151V‧‧‧第一開口151V‧‧‧first opening

152‧‧‧第二部分152‧‧‧Part II

152P‧‧‧絕緣塊152P‧‧‧Insulation block

160‧‧‧透明導電層160‧‧‧Transparent conductive layer

160P‧‧‧導電圖案層160P‧‧‧ conductive pattern layer

161P‧‧‧圖案部分161P‧‧‧ pattern part

162P‧‧‧非圖案部分162P‧‧‧Non-pattern part

160X‧‧‧第一軸向電極160X‧‧‧first axial electrode

160Y‧‧‧第二導電單元160Y‧‧‧Second conductive unit

170‧‧‧折射率匹配保護層170‧‧‧index matching protective layer

200‧‧‧觸控感測裝置200‧‧‧Touch sensing device

280‧‧‧黏結層280‧‧‧bonded layer

290‧‧‧顯示面板290‧‧‧ display panel

300‧‧‧觸控感測裝置300‧‧‧Touch sensing device

350‧‧‧絕緣層350‧‧‧Insulation

351‧‧‧第一部分351‧‧‧Part 1

351V‧‧‧第一開口351V‧‧‧first opening

352‧‧‧第二部分352‧‧‧Part II

352V‧‧‧第二開口352V‧‧‧second opening

400‧‧‧觸控感測裝置400‧‧‧Touch sensing device

R1‧‧‧透視部R1‧‧‧ Perspective

R2‧‧‧周邊部R2‧‧‧ peripherals

X‧‧‧第一方向X‧‧‧ first direction

Y‧‧‧第二方向Y‧‧‧second direction

Z‧‧‧垂直投影方向Z‧‧‧Vertical projection direction

第1圖至第4圖繪示了本發明之第一較佳實施例之觸控感測裝置的製作方法示意圖。1 to 4 are schematic views showing a method of fabricating a touch sensing device according to a first preferred embodiment of the present invention.

第5圖繪示了本發明之第一較佳實施例之觸控感測裝置的示意圖。FIG. 5 is a schematic diagram of a touch sensing device according to a first preferred embodiment of the present invention.

第6圖繪示了本發明之折射率匹配保護層的折射率分布示意圖。Figure 6 is a schematic view showing the refractive index distribution of the index matching protective layer of the present invention.

第7圖繪示了本發明之第二較佳實施例之觸控感測裝置的示意圖。FIG. 7 is a schematic diagram of a touch sensing device according to a second preferred embodiment of the present invention.

第8圖繪示了本發明之第三較佳實施例之觸控感測裝置的示意圖。FIG. 8 is a schematic diagram of a touch sensing device according to a third preferred embodiment of the present invention.

第9圖為沿第8圖中之B-B’剖線所繪示之剖面示意圖。Fig. 9 is a schematic cross-sectional view taken along line B-B' in Fig. 8.

第10圖繪示了本發明之第四較佳實施例之觸控感測裝置的示意圖。FIG. 10 is a schematic diagram of a touch sensing device according to a fourth preferred embodiment of the present invention.

第11圖為沿第10圖中之C-C’剖線所繪示之剖面示意圖。Fig. 11 is a schematic cross-sectional view taken along line C-C' in Fig. 10.

本說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解,製作商可能會用不同的名詞來稱呼同樣的元件。本說明書及後續的申請專利範圍並不以名稱的差異來做為區別元件的方式,而是以元件在功能上的差異來做為區別的基準。在通篇說明書及後續的請求項當中所提及的「包括」係為一開放式的用語,故應解釋成「包括但不限定於」。再者,為使熟習本發明所屬技術領域之一般技藝者 能更進一步了解本發明,下文特列舉本發明之數個較佳實施例,並配合所附圖式,詳細說明本發明的構成內容。需注意的是圖式僅以說明為目的,並未依照原尺寸作圖。此外,在文中使用例如”第一”與”第二”等敘述,僅用以區別不同的元件,並不對其產生順序之限制。Certain terms are used throughout this specification and the following claims to refer to particular elements. Those of ordinary skill in the art should understand that the manufacturer may refer to the same component by different nouns. The scope of this specification and the subsequent patent application do not make the difference between the names as the means of distinguishing the components, but the difference in function of the components as the basis for the difference. The term "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to". Furthermore, in order to make the general practitioner skilled in the art to which the invention pertains The present invention will be further understood by the following detailed description of the preferred embodiments of the invention. It should be noted that the drawings are for illustrative purposes only and are not drawn to the original dimensions. In addition, the use of the terms "first" and "second", and the like, are used to distinguish different elements only and do not limit the order.

請參考第1圖至第6圖。第1圖至第4圖繪示了本發明之第一較佳實施例之觸控感測裝置的製作方法示意圖。第5圖繪示了本實施例之觸控感測裝置的示意圖。第6圖繪示了本發明之折射率匹配保護層的折射率分布示意圖。其中,第4圖可視為沿第5圖中之A-A’剖線所繪示之剖面示意圖。為了方便說明,本發明之各圖式僅為示意以更容易了解本發明,其詳細的比例可依照設計的需求進行調整。Please refer to Figures 1 to 6. 1 to 4 are schematic views showing a method of fabricating a touch sensing device according to a first preferred embodiment of the present invention. FIG. 5 is a schematic diagram of the touch sensing device of the embodiment. Figure 6 is a schematic view showing the refractive index distribution of the index matching protective layer of the present invention. 4 is a cross-sectional view taken along the line A-A' in FIG. 5. For the convenience of description, the drawings of the present invention are only for the purpose of understanding the present invention, and the detailed proportions thereof can be adjusted according to the design requirements.

本實施例提供一種觸控感測裝置的製作方法,包括下列步驟。首先,如第1圖所示,提供一基板110,基板110包括一透視部R1以及一周邊部R2,周邊部R2位於透視部R1之至少一側,在本發明之其他實施例中,周邊部R2可視需要圍繞透視部R1的四周,但並不以此為限。基板110可包括硬質基板例如玻璃基板與陶瓷基板或可撓式基板(flexible substrate)例如塑膠基板或其他適合材料所形成之基板。此外,基板110亦可為一保護基板例如蓋板或保護玻璃(cover glass),但並不以此為限。接著,於基板110之周邊部R2上可選擇性地形成一遮光層120,遮光層120可包括色阻、油墨或其他適合的遮光材料,遮光層120可透過濺鍍及微影蝕刻製程形成。在透視部R1上可選擇性地形成一折射率匹配(index matching)層130,折射率匹配層130可全面覆蓋透視部R1區域,另,折射率匹配層130亦可延伸至周邊部R2區域,位於周邊部R2區域的折射率匹配層130與遮光層120於一垂直於基板110之垂直投影方向Z上重疊,換句話說,折射率匹配層130可在遮光層120之前形成於周邊部R2上,或是在遮光層120之後形成於遮光層120上(如第 1圖所示)。本實施例之折射率匹配層130較佳可包括一二氧化鈦(TiO2 )與二氧化矽(SiO2 )的化合物或一由五氧化二鈮(Nb2 O5 )與二氧化矽(SiO2 )所組成的雙層結構,而此雙層結構中五氧化二鈮係位於較靠近基板110的一側,但並不以此為限。折射率匹配層130在本實施例中可為一整面的膜層,可透過印刷、塗布或濺鍍等製程形成,故可不需微影蝕刻製程對折射率匹配層130進行圖案化製程。This embodiment provides a method for fabricating a touch sensing device, including the following steps. First, as shown in FIG. 1, a substrate 110 is provided. The substrate 110 includes a see-through portion R1 and a peripheral portion R2. The peripheral portion R2 is located on at least one side of the see-through portion R1. In other embodiments of the present invention, the peripheral portion R2 may need to surround the periphery of the see-through portion R1, but is not limited thereto. The substrate 110 may include a rigid substrate such as a glass substrate and a ceramic substrate or a flexible substrate such as a plastic substrate or other suitable material. In addition, the substrate 110 can also be a protective substrate such as a cover plate or a cover glass, but is not limited thereto. Then, a light shielding layer 120 is selectively formed on the peripheral portion R2 of the substrate 110. The light shielding layer 120 may include color resist, ink or other suitable light shielding material, and the light shielding layer 120 may be formed by a sputtering and photolithography process. An index matching layer 130 may be selectively formed on the see-through portion R1. The index matching layer 130 may completely cover the region of the see-through portion R1. Alternatively, the index matching layer 130 may extend to the peripheral portion R2. The index matching layer 130 located in the peripheral portion R2 region overlaps with the light shielding layer 120 in a vertical projection direction Z perpendicular to the substrate 110. In other words, the index matching layer 130 may be formed on the peripheral portion R2 before the light shielding layer 120. Or formed on the light shielding layer 120 after the light shielding layer 120 (as shown in FIG. 1). The index matching layer 130 of the present embodiment may preferably comprise a compound of titanium dioxide (TiO 2 ) and cerium oxide (SiO 2 ) or a layer of niobium pentoxide (Nb 2 O 5 ) and cerium oxide (SiO 2 ). The two-layer structure is composed, and the bismuth pentoxide system is located on the side closer to the substrate 110, but is not limited thereto. In this embodiment, the refractive index matching layer 130 can be a full-face film layer, which can be formed by a process such as printing, coating or sputtering, so that the refractive index matching layer 130 can be patterned by a micro-etching process.

之後,如第2圖所示,在透視部R1區域形成一橋接元件140B於折射率匹配層130上,換句話說,上述之折射率匹配層130係形成於橋接元件140B與透視部R1之間。此外,本實施例亦可另形成一周邊引線140T,周邊引線140T包括有兩部分,其分別電性連接於後續形成之第一軸向電極(如第5圖160X所示)及第二導電單元(如第5圖160Y所示)。本實施例之折射率匹配層130如若前所述可延伸至周邊部R2上,且折射率匹配層130是在遮光層120之後形成於遮光層120上,折射率匹配層130係至少部分位於遮光層120與周邊引線140T之間(如第2圖所示);若折射率匹配層130在遮光層120之前延伸形成於周邊部R2上,折射率匹配層130可位於遮光層120與周邊部R2之間;若折射率匹配層130並未延伸至周邊部R2區域,則周邊引線140T可直接形成於遮光層120上,但並不以此為限,總括而言,若在周邊部R2區域存在遮光層120及/或折射率匹配層130,則遮光層120及/或折射率匹配層130不論其堆疊順序為何皆是形成於周邊引線140T與周邊部R2之間,但若在周邊部R2區域不存在遮光層120及折射率匹配層130,則周邊引線140T可直接形成於周邊部R2上,而在透視部R1區域上若不存在折射率匹配層130,則橋接元件140B可直接形成於透視部R1上,此情況將於後續實施例再次詳述之。為了讓圖式可以清楚地顯示,在第2圖中僅繪出一個橋接元件140B做為代表,然而,觸控感測裝置通常具有多個橋接元件140B。值得說明的是,本實施例之橋接元件140B與周邊引線140T較佳係由對同一導電材 料(例如一金屬層140)進行圖案化製程所形成,但並不以此為限,亦可分屬不同導電材料而各自形成。金屬層140可包括金屬導電材料例如鋁、銅、銀、鉻、鈦、鉬之其中至少一者、上述材料之複合層或上述材料之合金,但並不以此為限。本實施例之遮光層120係形成於周邊部R2與周邊引線140T之間,可用以遮蔽周邊引線140T而避免周邊引線140T自第2圖中的基板110下方被識別出,藉此可提高觸控感測裝置的視覺外觀效果。Thereafter, as shown in FIG. 2, a bridging element 140B is formed on the index matching layer 130 in the region of the see-through portion R1. In other words, the above-mentioned index matching layer 130 is formed between the bridging element 140B and the see-through portion R1. . In addition, the present embodiment may further form a peripheral lead 140T. The peripheral lead 140T includes two portions electrically connected to the subsequently formed first axial electrode (as shown in FIG. 5XX) and the second conductive unit. (as shown in Figure 5, Figure 160Y). The index matching layer 130 of the present embodiment can be extended to the peripheral portion R2 as described above, and the index matching layer 130 is formed on the light shielding layer 120 after the light shielding layer 120, and the index matching layer 130 is at least partially located in the light shielding layer. Between the layer 120 and the peripheral lead 140T (as shown in FIG. 2); if the index matching layer 130 is formed on the peripheral portion R2 before the light shielding layer 120, the index matching layer 130 may be located at the light shielding layer 120 and the peripheral portion R2. If the index matching layer 130 does not extend to the peripheral portion R2 region, the peripheral lead 140T may be directly formed on the light shielding layer 120, but not limited thereto, and in general, if it exists in the peripheral portion R2 region The light shielding layer 120 and/or the index matching layer 130, the light shielding layer 120 and/or the index matching layer 130 are formed between the peripheral lead 140T and the peripheral portion R2 regardless of the stacking order, but if in the peripheral portion R2 region If the light shielding layer 120 and the index matching layer 130 are absent, the peripheral lead 140T can be directly formed on the peripheral portion R2, and if the refractive index matching layer 130 is not present in the region of the see-through portion R1, the bridging element 140B can be directly formed in the perspective On the R1, this situation Example embodiments are detailed in the subsequent again. In order to make the figure clearly visible, only one bridging element 140B is depicted as representative in FIG. 2, however, the touch sensing device typically has a plurality of bridging elements 140B. It should be noted that the bridging element 140B and the peripheral lead 140T of the embodiment are preferably made of the same conductive material. The material (for example, a metal layer 140) is formed by a patterning process, but is not limited thereto, and may be formed separately by different conductive materials. The metal layer 140 may include, but is not limited to, a metal conductive material such as at least one of aluminum, copper, silver, chromium, titanium, molybdenum, a composite layer of the above materials, or an alloy of the above materials. The light shielding layer 120 of the present embodiment is formed between the peripheral portion R2 and the peripheral lead 140T, and can be used to shield the peripheral lead 140T to prevent the peripheral lead 140T from being recognized from below the substrate 110 in FIG. 2, thereby improving touch. The visual appearance of the sensing device.

然後,如第3圖所示,形成一絕緣層150。絕緣層150包括一第一部分151及一第二部分152,第一部分151覆蓋於周邊引線140T上而對周邊引線140T具有保護效果,第二部分152覆蓋於橋接元件140B上,亦可說是設置於橋接元件140B與後續形成之導電圖案層(如第4圖所示之導電圖案層160P)之間。絕緣層150可包括無機材料例如氮化矽(silicon nitride)、氧化矽(silicon oxide)與氮氧化矽(silicon oxynitride)、有機材料例如丙烯酸類樹脂(acrylic resin)或其它適合之絕緣材料,絕緣層150可透過濺鍍及微影蝕刻製程或印刷製程形成。在本實施例中,第二部分152包括複數個相互分離的絕緣塊152P(第3圖僅示其中一個絕緣塊152P),絕緣塊152P位於橋接元件140B與後續形成之第一軸向電極(如第4圖所示之第一軸向電極160X)之間,以使橋接元件140B與第一軸向電極相互電性絕緣。此外,絕緣層150之第一部分151包括至少一第一開口151V,且第一開口151V至少暴露部分周邊引線140T,以使後續形成的導電圖案層(如第4圖所示之導電圖案層160P)可透過第一開口151V與周邊引線140T形成電性連接。此外,絕緣層150中的第一開口151V亦可用以使周邊引線140T可與其他外部元件例如軟性電路板或積體電路電性連接,但並不以此為限。值得說明的是,由於同一絕緣層150係同時接觸且覆蓋橋接元件140B與周邊引線140T,故周邊引線140T上除了第一開口151V所暴露的部分外皆可被絕緣層150保護,故可不需另外再形成保護層來保護周邊引線140T,且絕緣層150在透視部R1區域內產生絕緣塊 的作用,藉此利用同一元件的設置而達成兩種使用目的,進而可達到簡化製程步驟與結構的效果。此外,本實施例之絕緣層150係僅覆蓋部分位於透視部R1上的折射率匹配層130,故可減小絕緣層150的顏色與折射率對於外觀品質的影響。Then, as shown in Fig. 3, an insulating layer 150 is formed. The insulating layer 150 includes a first portion 151 and a second portion 152. The first portion 151 covers the peripheral lead 140T and has a protective effect on the peripheral lead 140T. The second portion 152 covers the bridging element 140B, and is also disposed on the bridging element 140B. The bridging element 140B is between the subsequently formed conductive pattern layer (such as the conductive pattern layer 160P shown in FIG. 4). The insulating layer 150 may include an inorganic material such as silicon nitride, silicon oxide and silicon oxynitride, an organic material such as an acrylic resin or other suitable insulating material, and an insulating layer. 150 can be formed by a sputtering and photolithography process or a printing process. In the present embodiment, the second portion 152 includes a plurality of insulating blocks 152P separated from each other (only one of the insulating blocks 152P is shown in FIG. 3), and the insulating block 152P is located at the bridging element 140B and the subsequently formed first axial electrode (eg, Between the first axial electrodes 160X) shown in FIG. 4, the bridging element 140B and the first axial electrode are electrically insulated from each other. In addition, the first portion 151 of the insulating layer 150 includes at least one first opening 151V, and the first opening 151V exposes at least a portion of the peripheral lead 140T to enable a subsequently formed conductive pattern layer (such as the conductive pattern layer 160P shown in FIG. 4). The electrical connection can be made to the peripheral lead 140T through the first opening 151V. In addition, the first opening 151V of the insulating layer 150 can also be used to electrically connect the peripheral lead 140T to other external components such as a flexible circuit board or an integrated circuit, but is not limited thereto. It should be noted that since the same insulating layer 150 contacts and covers the bridging element 140B and the peripheral lead 140T at the same time, the peripheral lead 140T can be protected by the insulating layer 150 except for the portion exposed by the first opening 151V, so that no additional A protective layer is further formed to protect the peripheral lead 140T, and the insulating layer 150 generates an insulating block in the region of the see-through portion R1. By using the same component to achieve two purposes of use, the effect of simplifying the process steps and structure can be achieved. In addition, the insulating layer 150 of the present embodiment covers only the refractive index matching layer 130 partially located on the see-through portion R1, so that the influence of the color and refractive index of the insulating layer 150 on the appearance quality can be reduced.

然後,如第4圖與第5圖所示,於透視部R1區域上形成一導電圖案層160P,導電圖案層160P包括一圖案部分161P與一非圖案部分162P。之後,於導電圖案層160P上形成一折射率匹配保護層170,且使折射率匹配保護層170覆蓋於導電圖案層160P上,折射率匹配保護層170可使導電圖案層160P之圖案部分161P與非圖案部分162P的折射率相匹配,從而使得圖案部分161P的圖形不可見,藉此形成如第4圖與第5圖中所示之觸控感測裝置100。在本實施例中,導電圖案層160P較佳係由對一透明導電材料(例如透明導電層160)進行圖案化製程所形成,但並不以此為限。透明導電層160可包括例如氧化銦錫(indium tin oxide,ITO)、氧化銦鋅(indium zinc oxide,IZO)、氧化鋁鋅(aluminum zinc oxide,AZO)或其他適合的透明導電材料。更進一步說明,本實施例之導電圖案層160P係用以形成進行觸控感測的電極,如第5圖所示,圖案部分161P包括一第一軸向電極160X以及複數個第二導電單元160Y,第一軸向電極160X係沿一第一方向X延伸,第二導電單元160Y係沿一第二方向Y排列,第一軸向電極160X與第二導電單元160Y相互電性絕緣,且第一軸向電極160X與部分之周邊引線140T電性連接,相鄰第二導電單元160Y透過橋接元件140B電性連接,且第二導電單元160Y與另一部分之周邊引線140T形成電性連接。第一方向X係大體上垂直於第二方向Y,但並不以此為限。在本發明之其他較佳實施例中,導電圖案層160P亦可視需要用以形成其他形狀與其他排列方式之透明電極。通常由於導電圖案層160P的圖案部分161P與非圖案部分162P的折射率不同,故圖案部分161P易被使用者看見,造成觸控感測裝置視覺外觀效果不佳。本實施例的折射率匹配保 護層170可使得導電圖案層160P之圖案部分161P與非圖案部分162P的折射率相匹配,換句話講,圖案部分161P的反射光線與非圖案部分162P的反射光線分別透過折射率匹配保護層170之後較均勻且一致的射出,從而使得圖案部分161P的圖形可見度降低,同時折射率匹配保護層170對導電圖案層160P亦具有保護的效果。另請注意,如第4圖與第5圖所示,折射率匹配保護層170較佳可包括一二氧化鈦(TiO2 )與二氧化矽(SiO2 )的化合物。此外,折射率匹配保護層170的折射率較佳係介於1.67至1.68之間,但並不以此為限。舉例來說,如第4圖與第6圖所示,折射率匹配保護層170可於380奈米至800奈米的波長範圍中呈現折射率由1.74遞減至1.64之變化。值得說明的是,在本實施例中,折射率匹配層130的材料特性可視其各自分別上下兩側材料的折射率狀況來進行搭配調整。舉例來說,當基板具有一折射率nS ,折射率匹配層130具有一折射率n1 ,導電圖案層160P具有一折射率nT ,則n1 較佳係大體上等於nS 與nT 的乘積開根號,也就是n1(nS *nT ),藉以達到折射率匹配以降低導電圖案層160P明顯度的效果。折射率匹配保護層170與折射率匹配層130對導電圖案層160P均具有折射率匹配作用,使得導電圖案層160P可見度降至最低甚或不可見。值得說明的是,本實施例之折射率匹配保護層170較佳係未與周邊引線140T於垂直投影方向Z上互相重疊,故絕緣層150之第一開口151V可不被折射率匹配保護層170覆蓋,因此折射率匹配保護層170可不需為了覆蓋位於周邊部R2的周邊引線140T而須藉由較複雜且成本較高之微影蝕刻製程於折射率匹配保護層170對應於周邊引線140T的區域另外再形成接觸開孔,故可因此達到製程簡化的效果。也就是說,本實施例之折射率匹配保護層170可僅藉由凸板例如APR(Asahikasei photosensitive resin)板以轉印的方式成膜,藉以達到簡化製程的效果,但本發明並不以此為限。在本發明的其他較佳實施例中亦可視需要以其他製程例如濺鍍(sputter)、化學氣相沉積(chemical vapor deposition,CVD)、噴墨印刷(inkjet printing)、狹縫塗布(slit coating)、旋塗(spin coating)、噴塗(spray coating)或滾 輪塗布(roller coating)等方式形成折射率匹配保護層170。此外,在本發明的其他較佳實施例中亦可視需要使得折射率匹配保護層170延伸至周邊部R2之上並與周邊引線140T於垂直投影方向Z上至少部分互相重疊,藉以達到加強保護的效果。Then, as shown in FIGS. 4 and 5, a conductive pattern layer 160P is formed on the region of the see-through portion R1, and the conductive pattern layer 160P includes a pattern portion 161P and a non-pattern portion 162P. Thereafter, an index matching protective layer 170 is formed on the conductive pattern layer 160P, and the index matching protective layer 170 is overlaid on the conductive pattern layer 160P. The index matching protective layer 170 may cause the pattern portion 161P of the conductive pattern layer 160P to The refractive indices of the non-pattern portions 162P are matched such that the pattern of the pattern portion 161P is not visible, thereby forming the touch sensing device 100 as shown in FIGS. 4 and 5. In this embodiment, the conductive pattern layer 160P is preferably formed by a patterning process for a transparent conductive material (for example, the transparent conductive layer 160), but is not limited thereto. The transparent conductive layer 160 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or other suitable transparent conductive material. To further illustrate, the conductive pattern layer 160P of the present embodiment is used to form an electrode for performing touch sensing. As shown in FIG. 5, the pattern portion 161P includes a first axial electrode 160X and a plurality of second conductive units 160Y. The first axial electrode 160X extends along a first direction X, and the second conductive unit 160Y is aligned along a second direction Y. The first axial electrode 160X and the second conductive unit 160Y are electrically insulated from each other, and the first The axial electrode 160X is electrically connected to a portion of the peripheral lead 140T, the adjacent second conductive unit 160Y is electrically connected through the bridging element 140B, and the second conductive unit 160Y is electrically connected to the peripheral lead 140T of the other portion. The first direction X is substantially perpendicular to the second direction Y, but is not limited thereto. In other preferred embodiments of the present invention, the conductive pattern layer 160P may also be used to form transparent electrodes of other shapes and other arrangements. Generally, since the refractive index of the pattern portion 161P and the non-pattern portion 162P of the conductive pattern layer 160P are different, the pattern portion 161P is easily seen by the user, resulting in a poor visual appearance of the touch sensing device. The index matching protective layer 170 of the present embodiment can match the refractive index of the pattern portion 161P of the conductive pattern layer 160P with the non-pattern portion 162P, in other words, the reflected light of the pattern portion 161P and the reflected light of the non-pattern portion 162P. The uniformity and uniform emission after the refractive index matching protective layer 170 is respectively transmitted, so that the pattern visibility of the pattern portion 161P is lowered, and the index matching protective layer 170 also has a protective effect on the conductive pattern layer 160P. Also note that as shown in Figures 4 and 5, the index matching protective layer 170 preferably includes a compound of titanium dioxide (TiO 2 ) and cerium oxide (SiO 2 ). In addition, the refractive index of the index matching protective layer 170 is preferably between 1.67 and 1.68, but is not limited thereto. For example, as shown in FIGS. 4 and 6, the index matching protective layer 170 can exhibit a change in refractive index from 1.74 to 1.64 in the wavelength range of 380 nm to 800 nm. It should be noted that, in this embodiment, the material properties of the index matching layer 130 can be adjusted by the refractive index of the materials on the upper and lower sides of the respective layers. For example, when the substrate has a refractive index n S , the index matching layer 130 has a refractive index n 1 , and the conductive pattern layer 160P has a refractive index n T , then n 1 is preferably substantially equal to n S and n T The product of the root number, that is, n 1 (n S *n T ), whereby the effect of index matching is achieved to reduce the visibility of the conductive pattern layer 160P. The index matching protective layer 170 and the index matching layer 130 have an index matching effect on the conductive pattern layer 160P such that the visibility of the conductive pattern layer 160P is minimized or invisible. It should be noted that the index matching protective layer 170 of the present embodiment preferably does not overlap with the peripheral lead 140T in the vertical projection direction Z, so the first opening 151V of the insulating layer 150 may not be covered by the index matching protective layer 170. Therefore, the index matching protective layer 170 may not need to cover the peripheral lead 140T located at the peripheral portion R2 by a relatively complicated and costly lithography process in the region of the index matching protective layer 170 corresponding to the peripheral lead 140T. The contact opening is formed again, so that the process simplification effect can be achieved. That is to say, the index matching protective layer 170 of the present embodiment can be formed into a film by transfer only by a convex plate such as an APR (Asahikasei photosensitive resin) plate, thereby achieving the effect of simplifying the process, but the present invention does not Limited. In other preferred embodiments of the present invention, other processes such as sputtering, chemical vapor deposition (CVD), inkjet printing, and slit coating may be used as needed. The index matching protective layer 170 is formed by spin coating, spray coating, or roller coating. In addition, in other preferred embodiments of the present invention, the index matching protective layer 170 may be extended over the peripheral portion R2 and at least partially overlapped with the peripheral lead 140T in the vertical projection direction Z, thereby achieving enhanced protection. effect.

如第4圖與第5圖所示,本實施例之觸控感測裝置100包括基板110、遮光層120、折射率匹配層130、橋接元件140B、周邊引線140T、絕緣層150、導電圖案層160P與折射率匹配保護層170。基板110包括透視部R1與周邊部R2,周邊部R2位於透視部R2之至少一側。遮光層120係設置於周邊部R2上且位於周邊部R2與周邊引線140T之間。折射率匹配層130係設置於基板110上並位於橋接元件140B與透視部R1之間。在本實施例中,折射率匹配層130更延伸至周邊部R2上,且折射率匹配層130係至少部分設置於遮光層120與周邊引線140T之間,但並不以此為限。橋接元件140B係設置於折射率匹配層130上並位於透視部R1之上。周邊引線140T係設置於遮光層120上並位於周邊部R2上。絕緣層150包括第一部分151以及第二部分152,第一部分151係覆蓋於周邊引線140T上,第二部分152係設置於橋接元件140B與導電圖案層160P之間,且第二部分152包括複數個相互分離的絕緣塊152P。各絕緣塊152P係位於橋接元件140B與第一軸向電極160X之間以使第一軸向電極160X與橋接元件140B相互電性絕緣。導電圖案層160P係至少部分設置於透視部R1區域上,在本實施例中導電圖案層160P係設置於折射率匹配層130與絕緣層150上,導電圖案層160P包括圖案部分161P與非圖案部分162P,圖案部分161P包括至少一第一軸向電極160X以及複數個第二導電單元160Y,第一軸向電極161X與部分之周邊引線140T電性連接,相鄰第二導電單元160Y係透過橋接元件140B電性連接,且第二導電單元160Y係與另一部分之周邊引線140T電性連接。折射率匹配保護層170係覆蓋於導電圖案層160P之上,折射率匹配保護層170的設置使圖案部 分161P與非圖案部分162P的折射率相匹配。本實施例之觸控感測裝置100中的各部件特徵與材料特性以於上述製作方法中說明,故在此並不再贅述。As shown in FIG. 4 and FIG. 5 , the touch sensing device 100 of the present embodiment includes a substrate 110 , a light shielding layer 120 , an index matching layer 130 , a bridging element 140B , a peripheral lead 140T , an insulating layer 150 , and a conductive pattern layer . The 160P and the index match the protective layer 170. The substrate 110 includes a see-through portion R1 and a peripheral portion R2, and the peripheral portion R2 is located on at least one side of the see-through portion R2. The light shielding layer 120 is disposed on the peripheral portion R2 and located between the peripheral portion R2 and the peripheral lead 140T. The index matching layer 130 is disposed on the substrate 110 and located between the bridging element 140B and the see-through portion R1. In this embodiment, the index matching layer 130 extends to the peripheral portion R2, and the index matching layer 130 is at least partially disposed between the light shielding layer 120 and the peripheral lead 140T, but is not limited thereto. The bridging element 140B is disposed on the index matching layer 130 and above the see-through portion R1. The peripheral lead 140T is disposed on the light shielding layer 120 and located on the peripheral portion R2. The insulating layer 150 includes a first portion 151 covering the peripheral lead 140T, a second portion 152 disposed between the bridging element 140B and the conductive pattern layer 160P, and a second portion 152 including a plurality of Insulating blocks 152P separated from each other. Each of the insulating blocks 152P is located between the bridging element 140B and the first axial electrode 160X to electrically insulate the first axial electrode 160X from the bridging element 140B. The conductive pattern layer 160P is disposed at least partially on the region of the see-through portion R1. In the embodiment, the conductive pattern layer 160P is disposed on the index matching layer 130 and the insulating layer 150. The conductive pattern layer 160P includes the pattern portion 161P and the non-pattern portion. 162P, the pattern portion 161P includes at least one first axial electrode 160X and a plurality of second conductive units 160Y. The first axial electrode 161X is electrically connected to a portion of the peripheral lead 140T, and the adjacent second conductive unit 160Y is transmitted through the bridging element. The 140B is electrically connected, and the second conductive unit 160Y is electrically connected to the peripheral lead 140T of the other portion. The index matching protective layer 170 is overlaid on the conductive pattern layer 160P, and the refractive index matching protective layer 170 is disposed so that the pattern portion The minute 161P matches the refractive index of the non-pattern portion 162P. The features and material characteristics of the components in the touch sensing device 100 of the present embodiment are described in the above manufacturing method, and thus will not be described herein.

本實施例之觸控感測裝置100係利用同一絕緣層150之第一部分151與第二部分152分別位於周邊部R2與透視部R1的所在區域,絕緣層150之第一部分151在周邊部R2區域用於周邊引線140T的保護層的作用,絕緣層150之第二部分152在透視部R1區域用於使導電圖案層160P之第一軸向電極160X與橋接元件140B相互絕緣的作用。另外,設置折射率匹配保護層170,使其對導電圖案層160P同時具有折射率匹配以及保護效果,藉此,利用同一元件的設置可達成兩種使用目的,故可簡化製程步驟及結構。此外,在本實施例中,導電圖案層160P係以折射率匹配保護層170形成保護效果,而周邊引線140T係以絕緣層150的第一部分151形成保護效果。另外,在形成導電圖案層160P之前,周邊引線140T大部分已被絕緣層150的第一部分151所覆蓋,絕緣層150可對周邊引線140T產生保護作用,故可減少形成導電圖案層160P的製程對已形成的周邊引線140T產生影響,進而提高良率。In the touch sensing device 100 of the present embodiment, the first portion 151 and the second portion 152 of the same insulating layer 150 are respectively located in the region where the peripheral portion R2 and the see-through portion R1 are located, and the first portion 151 of the insulating layer 150 is in the peripheral portion R2 region. For the function of the protective layer of the peripheral lead 140T, the second portion 152 of the insulating layer 150 serves to insulate the first axial electrode 160X of the conductive pattern layer 160P from the bridging element 140B in the region of the see-through portion R1. In addition, the index matching protective layer 170 is provided to have both an index matching and a protective effect on the conductive pattern layer 160P, whereby two uses can be achieved by the same element arrangement, so that the process steps and structures can be simplified. Further, in the present embodiment, the conductive pattern layer 160P forms a protective effect with the index matching protective layer 170, and the peripheral lead 140T forms a protective effect with the first portion 151 of the insulating layer 150. In addition, before the formation of the conductive pattern layer 160P, the peripheral lead 140T is mostly covered by the first portion 151 of the insulating layer 150, and the insulating layer 150 can protect the peripheral lead 140T, so that the process pair for forming the conductive pattern layer 160P can be reduced. The formed peripheral lead 140T has an effect, thereby improving the yield.

下文將針對本發明之不同實施例進行說明,且為簡化說明,以下說明主要針對各實施例不同之處進行詳述,而不再對相同之處作重覆贅述。此外,本發明之各實施例中相同之元件係以相同之標號進行標示,以利於各實施例間互相對照。The different embodiments of the present invention are described below, and the following description is mainly for the sake of simplification of the description of the embodiments, and the details are not repeated. In addition, the same elements in the embodiments of the present invention are denoted by the same reference numerals to facilitate the comparison between the embodiments.

請參考第7圖。第7圖繪示了本發明之第二較佳實施例之觸控感測裝置的示意圖。如第7圖所示,本實施例之觸控感測裝置200與上述第一較佳實施例之間的不同處在於觸控感測裝置200更包括一顯示面板290與一黏結層280,其中黏結層280係設置於顯示面板290與折射率匹配保護層170之間。換句話說,本實施例之觸控感測裝置200的製作方法係更包括提供顯 示面板290,並於折射率匹配保護層170與顯示面板290之間形成黏結層280,用以黏結顯示面板290與基板110。顯示面板290可包括液晶顯示面板、有機發光二極體(OLED)顯示面板、電濕潤(electro-wetting)顯示面板、電子墨水(e-ink)顯示面板、電漿(plasma)顯示面板或一場發射(FED)顯示面板,但並不以此為限。黏結層280可包括固態光學膠(optical clear adhesive,OCA)、感壓膠(pressure sensitive adhesive,PSA)或其他適合之黏結材料。此外,值得說明的是,在本實施例中,折射率匹配保護層170的材料特性可視其各自分別上下兩側材料的折射率狀況來進行搭配調整。舉例來說,當導電圖案層160P具有一折射率nT ,折射率匹配保護層170具有一折射率n2 ,黏結層280具有一折射率nP ,則n2 較佳係大體上等於nP 與nT 的乘積開根號,也就是n2(nP *nT ),藉以達到折射率匹配以降低導電圖案層160P明顯度的效果,但並不以此為限。此外,本實施例之觸控感測裝置200可視為一觸控顯示裝置,且後續各實施例亦可視需要設置如本實施例之顯示面板290與黏結層280。Please refer to Figure 7. FIG. 7 is a schematic diagram of a touch sensing device according to a second preferred embodiment of the present invention. As shown in FIG. 7 , the difference between the touch sensing device 200 of the present embodiment and the first preferred embodiment is that the touch sensing device 200 further includes a display panel 290 and a bonding layer 280 . The bonding layer 280 is disposed between the display panel 290 and the index matching protective layer 170. In other words, the manufacturing method of the touch sensing device 200 of the present embodiment further includes providing the display panel 290, and forming a bonding layer 280 between the index matching protective layer 170 and the display panel 290 for bonding the display panel 290. With the substrate 110. The display panel 290 may include a liquid crystal display panel, an organic light emitting diode (OLED) display panel, an electro-wetting display panel, an e-ink display panel, a plasma display panel, or a single emission. (FED) display panel, but not limited to this. The bonding layer 280 can include an optical clear adhesive (OCA), a pressure sensitive adhesive (PSA), or other suitable bonding material. In addition, it should be noted that in the present embodiment, the material properties of the index matching protective layer 170 may be adjusted in accordance with the refractive index of the materials on the upper and lower sides of the respective layers. For example, when the conductive pattern layer 160P has a refractive index n T , the index matching protective layer 170 has a refractive index n 2 , and the bonding layer 280 has a refractive index n P , then n 2 is preferably substantially equal to n P The product of n T is the root number, which is n 2 (n P *n T ), thereby achieving the effect of refractive index matching to reduce the visibility of the conductive pattern layer 160P, but is not limited thereto. In addition, the touch sensing device 200 of the present embodiment can be regarded as a touch display device, and the display panel 290 and the bonding layer 280 of the embodiment can be disposed as needed in subsequent embodiments.

請參考第8圖與第9圖。第8圖繪示了本發明之第三較佳實施例之觸控感測裝置的示意圖。第9圖為沿第8圖中之B-B’剖線所繪示之剖面示意圖。如第8圖與第9圖所示,本實施例之觸控感測裝置300包括基板110、遮光層120、折射率匹配層130、橋接元件140B、周邊引線140T、一絕緣層350、導電圖案層160P與折射率匹配保護層170。絕緣層350係設置於折射率匹配層130、橋接元件140B與周邊引線140T之上,且絕緣層350係直接接觸周邊引線140T與橋接元件140B。絕緣層350包括一第一部分351以及一第二部分352,第一部分351係覆蓋於周邊引線140T上,且第二部分352係設置於橋接元件140B與導電圖案層160P之間。與上述第一較佳實施例之間的不同處在於本實施例之絕緣層350係以整面覆蓋方式形成於基板110上,且絕緣層350之第一部分351包括複數第一開口351V,而絕緣層350之 第二部分352包括至少一第二開口352V。第一開口351V係至少暴露部分周邊引線140T,且導電圖案層160P係透過第一開口351V與周邊引線140T形成電性連接。橋接元件140B透過第二開口352V電性連接相鄰之第二導電單元160Y。本實施例之觸控感測裝置300除了絕緣層350的形狀與分布之外,其各部件的設置位置、材料特性以及製作方式與上述第一較佳實施例相似,故在此並不再贅述。Please refer to Figure 8 and Figure 9. FIG. 8 is a schematic diagram of a touch sensing device according to a third preferred embodiment of the present invention. Fig. 9 is a schematic cross-sectional view taken along line B-B' in Fig. 8. As shown in FIG. 8 and FIG. 9 , the touch sensing device 300 of the present embodiment includes a substrate 110 , a light shielding layer 120 , an index matching layer 130 , a bridging element 140B , a peripheral lead 140T , an insulating layer 350 , and a conductive pattern. Layer 160P and index matching protective layer 170. The insulating layer 350 is disposed on the index matching layer 130, the bridging element 140B and the peripheral lead 140T, and the insulating layer 350 directly contacts the peripheral lead 140T and the bridging element 140B. The insulating layer 350 includes a first portion 351 covering the peripheral lead 140T and a second portion 352 disposed between the bridging element 140B and the conductive pattern layer 160P. The difference from the first preferred embodiment described above is that the insulating layer 350 of the present embodiment is formed on the substrate 110 in a full-coverage manner, and the first portion 351 of the insulating layer 350 includes a plurality of first openings 351V, and is insulated. Layer 350 The second portion 352 includes at least one second opening 352V. The first opening 351V exposes at least a portion of the peripheral lead 140T, and the conductive pattern layer 160P is electrically connected to the peripheral lead 140T through the first opening 351V. The bridging element 140B is electrically connected to the adjacent second conductive unit 160Y through the second opening 352V. In addition to the shape and distribution of the insulating layer 350, the touch sensing device 300 of the present embodiment has similar arrangement positions, material characteristics, and manufacturing methods of the components, and is similar to the above-described first preferred embodiment, and therefore will not be described herein. .

值得說明的是,在上述各實施例中,橋接元件140B可由對一透明導電材料進行圖案化製程所形成,但並不以此為限,藉由以透明導電材料形成透視部R1中的橋接元件140B,可進一步降低透視部R1中橋接元件140B的可識別度,進而達到改善外觀視效的目的。It should be noted that, in the above embodiments, the bridging element 140B may be formed by patterning a transparent conductive material, but not limited thereto, by forming the bridging element in the see-through portion R1 with a transparent conductive material. 140B, the recognizability of the bridging element 140B in the see-through portion R1 can be further reduced, thereby achieving the purpose of improving visual appearance.

請參考第10圖與第11圖。第10圖繪示了本發明之第四較佳實施例之觸控感測裝置的示意圖。第11圖為沿第10圖中之C-C’剖線所繪示之剖面示意圖。如第10圖與第11圖所示,本實施例之觸控感測裝置400包括基板110、橋接元件140B、周邊引線140T、絕緣層150、導電圖案層160P與折射率匹配保護層170。也就是說,相較於上述第一較佳實施例,本實施例之觸控感測裝置400並不包括遮光層與折射率匹配層。因此,本實施例之觸控感測裝置400的製作方法包括下列步驟。首先,提供基板110,基板110包括透視部R1以及周邊部R2,周邊部R2位於透視部R1之至少一側。然後,於周邊部R2上形成周邊引線140T,於透視部R1上形成橋接元件140B。之後,於透視部R1上形成導電圖案層160P,導電圖案層160P包括圖案部分161P與非圖案部分162P,圖案部分161P包括至少一第一軸向電極160X以及複數個第二導電單元160Y,第一軸向電極160X與部分之周邊引線140T電性連接,相鄰第二導電單元160Y透過橋接元件140B電性連接,且第二導電單元160Y係與另一部分周邊引線140T電性連接。然後,形成絕緣層150, 絕緣層150包括第一部分151及第二部分152,第一部分151覆蓋於周邊引線140T上,且第二部分152設置於橋接元件140B與導電圖案層160P之間。最後,形成折射率匹配保護層170於導電圖案層160P之上,且折射率匹配保護層170係覆蓋透視部R1。本實施例之觸控感測裝置400除了不具有遮光層與折射率匹配層之外,其周邊引線140T可採用透明導電材料形成,以使周邊引線140T可視度降低,橋接元件140B可採用透明或非透明導電材料形成,當周邊引線140T與橋接元件140B採用相同材料時,周邊引線140T與橋接元件140B可在同一步驟中形成。其它各部件的設置位置、材料特性以及製作方式與上述第一較佳實施例相似,故在此並不再贅述。在本實施例中,絕緣層150之第二部分152包括複數個相互分離的絕緣塊152P,然而在另一實施例中,絕緣層150也可如第三實施例(如第8圖及第9圖所示)的結構,即絕緣層350係以整面覆蓋方式形成於基板110上,且絕緣層350之第一部分包括複數第一開口,絕緣層350之第二部分包括至少一第二開口。Please refer to Figure 10 and Figure 11. FIG. 10 is a schematic diagram of a touch sensing device according to a fourth preferred embodiment of the present invention. Fig. 11 is a schematic cross-sectional view taken along line C-C' in Fig. 10. As shown in FIG. 10 and FIG. 11 , the touch sensing device 400 of the present embodiment includes a substrate 110 , a bridging element 140B , a peripheral lead 140T , an insulating layer 150 , a conductive pattern layer 160P , and an index matching protective layer 170 . That is to say, the touch sensing device 400 of the present embodiment does not include a light shielding layer and an index matching layer, as compared with the first preferred embodiment. Therefore, the manufacturing method of the touch sensing device 400 of the embodiment includes the following steps. First, a substrate 110 is provided. The substrate 110 includes a see-through portion R1 and a peripheral portion R2, and the peripheral portion R2 is located on at least one side of the see-through portion R1. Then, a peripheral lead 140T is formed on the peripheral portion R2, and a bridging element 140B is formed on the see-through portion R1. Thereafter, a conductive pattern layer 160P is formed on the see-through portion R1. The conductive pattern layer 160P includes a pattern portion 161P and a non-pattern portion 162P. The pattern portion 161P includes at least one first axial electrode 160X and a plurality of second conductive units 160Y, first The axial electrode 160X is electrically connected to a portion of the peripheral lead 140T, the adjacent second conductive unit 160Y is electrically connected through the bridge member 140B, and the second conductive unit 160Y is electrically connected to the other portion of the peripheral lead 140T. Then, an insulating layer 150 is formed, The insulating layer 150 includes a first portion 151 overlying the perimeter lead 140T and a second portion 152 disposed between the bridging element 140B and the conductive pattern layer 160P. Finally, an index matching protective layer 170 is formed over the conductive pattern layer 160P, and the index matching protective layer 170 covers the see-through portion R1. The touch sensing device 400 of the present embodiment may be formed of a transparent conductive material except that the light shielding layer and the index matching layer are not provided, so that the visibility of the peripheral lead 140T is lowered, and the bridging element 140B may be transparent or The non-transparent conductive material is formed. When the peripheral lead 140T and the bridging element 140B are made of the same material, the peripheral lead 140T and the bridging element 140B can be formed in the same step. The arrangement positions, material characteristics, and manufacturing methods of the other components are similar to those of the first preferred embodiment described above, and thus are not described herein again. In the present embodiment, the second portion 152 of the insulating layer 150 includes a plurality of insulating blocks 152P separated from each other. However, in another embodiment, the insulating layer 150 may also be as in the third embodiment (such as FIG. 8 and FIG. 9). The structure shown in the figure, that is, the insulating layer 350 is formed on the substrate 110 in a full-coverage manner, and the first portion of the insulating layer 350 includes a plurality of first openings, and the second portion of the insulating layer 350 includes at least one second opening.

綜合以上所述,本發明之觸控感測裝置及其製作方法,係利用單一絕緣層同時覆蓋分別位於透視部區域的橋接元件與周邊部區域的周邊引線,絕緣層之第一部分在周邊部用於周邊引線的保護層的作用,絕緣層之第二部分在透視部用於使導電圖案層之第一軸向電極與橋接元件相互絕緣的作用。另外,折射率匹配保護層對於導電圖案層同時具有折射率匹配以及保護效果,藉此,利用同一元件的設置可達成兩種使用目的,故可簡化製程步驟及結構。另外,因此折射率匹配保護層可不需為了覆蓋周邊引線而採用較複雜且成本較高之微影蝕刻製程,進而可達到製程簡化的目的。In summary, the touch sensing device of the present invention and the manufacturing method thereof use a single insulating layer to simultaneously cover the peripheral leads of the bridging element and the peripheral portion respectively located in the see-through portion region, and the first portion of the insulating layer is used in the peripheral portion. The second portion of the insulating layer serves to insulate the first axial electrode of the conductive pattern layer from the bridging element in the see-through portion as a function of the protective layer of the peripheral lead. In addition, the index matching protective layer has both an index matching and a protective effect on the conductive pattern layer, whereby two purposes of use can be achieved by the arrangement of the same element, so that the process steps and structures can be simplified. In addition, the refractive index matching protective layer can be used to cover the peripheral leads without using a complicated and costly lithography etching process, thereby achieving the simplification of the process.

100‧‧‧觸控感測裝置100‧‧‧Touch sensing device

110‧‧‧基板110‧‧‧Substrate

120‧‧‧遮光層120‧‧‧ shading layer

130‧‧‧折射率匹配層130‧‧‧index matching layer

140‧‧‧金屬層140‧‧‧metal layer

140B‧‧‧橋接元件140B‧‧‧Bridge components

140T‧‧‧周邊引線140T‧‧‧ peripheral leads

150‧‧‧絕緣層150‧‧‧Insulation

151‧‧‧第一部分151‧‧‧Part 1

151V‧‧‧第一開口151V‧‧‧first opening

152‧‧‧第二部分152‧‧‧Part II

160‧‧‧透明導電層160‧‧‧Transparent conductive layer

160P‧‧‧導電圖案層160P‧‧‧ conductive pattern layer

170‧‧‧折射率匹配保護層170‧‧‧index matching protective layer

R1‧‧‧透視部R1‧‧‧ Perspective

R2‧‧‧周邊部R2‧‧‧ peripherals

Z‧‧‧垂直投影方向Z‧‧‧Vertical projection direction

Claims (25)

一種觸控感測裝置,包括:一基板,包括一透視部以及一周邊部,該周邊部位於該透視部之至少一側;一周邊引線,設置於該周邊部上;一橋接元件,設置於該透視部上;一折射率匹配層,設置於該橋接元件與該透視部之間;一導電圖案層,設置於該透視部上,該導電圖案層包括一圖案部分與一非圖案部分,該圖案部分包括至少一第一軸向電極以及複數個第二導電單元,該第一軸向電極與部分之該周邊引線電性連接,相鄰該等第二導電單元係透過該橋接元件電性連接,且該等第二導電單元係與另一部分之該周邊引線電性連接;一絕緣層,包括一第一部分以及一第二部分,該第一部分係覆蓋於該周邊引線上,且該第二部分係設置於該橋接元件與該導電圖案層之間;以及一折射率匹配保護層,覆蓋於該導電圖案層上,且該折射率匹配保護層的設置使該圖案部分與該非圖案部分的折射率相匹配。 A touch sensing device includes: a substrate comprising a see-through portion and a peripheral portion, the peripheral portion being located on at least one side of the see-through portion; a peripheral lead disposed on the peripheral portion; a bridging element disposed on the On the see-through portion, an index matching layer is disposed between the bridging element and the see-through portion; a conductive pattern layer is disposed on the see-through portion, the conductive pattern layer includes a pattern portion and a non-pattern portion, The pattern portion includes at least one first axial electrode and a plurality of second conductive units. The first axial electrode is electrically connected to a portion of the peripheral lead, and the second conductive unit is electrically connected through the bridging element. And the second conductive unit is electrically connected to the peripheral lead of the other portion; an insulating layer includes a first portion and a second portion, the first portion covers the peripheral lead, and the second portion Provided between the bridging element and the conductive pattern layer; and an index matching protective layer overlying the conductive pattern layer, and the refractive index matching protective layer is disposed such that Case portion matches the refractive index of the non-patterned portion. 如請求項1所述之觸控感測裝置,更包括一遮光層,設置於該周邊部與該周邊引線之間。 The touch sensing device of claim 1, further comprising a light shielding layer disposed between the peripheral portion and the peripheral lead. 如請求項1所述之觸控感測裝置,其中該折射率匹配層更延伸至該周邊部上,且該折射率匹配層係至少部分設置於該遮光層與周邊引線之間。 The touch sensing device of claim 1, wherein the index matching layer extends further to the peripheral portion, and the index matching layer is at least partially disposed between the light shielding layer and the peripheral lead. 如請求項1所述之觸控感測裝置,其中該基板具有一折射率nS ,該折射率匹配層具有一折射率n1 ,該導電圖案層具有一折射率nT ,且n1 等於nS 與nT 的乘積開根號。The touch sensing device of claim 1, wherein the substrate has a refractive index n S , the index matching layer has a refractive index n 1 , the conductive pattern layer has a refractive index n T , and n 1 is equal to The product of n S and n T is the root number. 如請求項1所述之觸控感測裝置,更包括一顯示面板與一黏結層,其中該黏結層係設置於該顯示面板與該折射率匹配保護層之間。 The touch sensing device of claim 1, further comprising a display panel and a bonding layer, wherein the bonding layer is disposed between the display panel and the index matching protective layer. 如請求項5所述之觸控感測裝置,其中該導電圖案層具有一折射率nT ,該折射率匹配保護層具有一折射率n2 ,該黏結層具有一折射率nP ,且n2 等於nP 與nT 的乘積開根號。The touch sensing device of claim 5, wherein the conductive pattern layer has a refractive index n T , the index matching protective layer has a refractive index n 2 , and the adhesive layer has a refractive index n P , and n 2 is equal to the product of n P and n T opening the root number. 如請求項1所述之觸控感測裝置,其中該折射率匹配保護層包括一二氧化鈦(TiO2 )與二氧化矽(SiO2 )的化合物。The touch sensing device of claim 1, wherein the index matching protective layer comprises a compound of titanium dioxide (TiO 2 ) and cerium oxide (SiO 2 ). 如請求項1所述之觸控感測裝置,其中該折射率匹配層包括一二氧化鈦(TiO2 )與二氧化矽(SiO2 )的化合物或一由五氧化二鈮(Nb2 O5 )與二氧化矽(SiO2 )所組成的雙層結構。The touch sensing device of claim 1, wherein the index matching layer comprises a compound of titanium dioxide (TiO 2 ) and cerium oxide (SiO 2 ) or a bismuth pentoxide (Nb 2 O 5 ) A two-layer structure composed of cerium oxide (SiO 2 ). 如請求項1所述之觸控感測裝置,其中該絕緣層的該第一部分包括至少一第一開口,該第一開口係至少暴露部分該周邊引線,且該導電圖案層係透過該第一開口與該周邊引線形成電性連接。 The touch sensing device of claim 1, wherein the first portion of the insulating layer comprises at least one first opening, the first opening is at least partially exposed to the peripheral lead, and the conductive pattern layer is transmitted through the first The opening is electrically connected to the peripheral lead. 如請求項1所述之觸控感測裝置,其中該絕緣層之該第二部分包括複數個相互分離的絕緣塊,各該絕緣塊係位於該橋接元件與該第一軸向電極之間以使該第一軸向電極與該橋接元件相互電性絕緣。 The touch sensing device of claim 1, wherein the second portion of the insulating layer comprises a plurality of insulating blocks separated from each other, each insulating block being located between the bridging element and the first axial electrode The first axial electrode and the bridging element are electrically insulated from each other. 如請求項1所述之觸控感測裝置,其中該絕緣層之該第二部分包括複數個第二開口,該橋接元件透過該等第二開口電性連接相鄰之該等第二導電單元。 The touch sensing device of claim 1, wherein the second portion of the insulating layer comprises a plurality of second openings, and the bridging element is electrically connected to the adjacent second conductive units through the second openings . 如請求項1所述之觸控感測裝置,其中該橋接元件與該周邊引線係具有相同的導電材料。 The touch sensing device of claim 1, wherein the bridging element has the same conductive material as the peripheral lead. 一種觸控感測裝置的製作方法,包括下列步驟:提供一基板,該基板包括一透視部以及一周邊部,且該周邊部係位於該透視部之至少一側;於該周邊部上形成一周邊引線;於該透視部上形成一橋接元件;形成一折射率匹配層於該橋接元件與該透視部之間;於該透視部上形成一導電圖案層,該導電圖案層包括一圖案部分與一非圖案部分,該圖案部分包括至少一第一軸向電極以及複數個第二導電單元,該第一軸向電極與部分之該周邊引線電性連接,相鄰該等第二導電單元係透過該橋接元件電性連接,且該等第二導電單元係與另一部分之該周邊引線電性連接;形成一絕緣層,該絕緣層包括一第一部分及一第二部分,該第一部分係覆蓋於該周邊引線上,該第二部分係設置於該橋接元件與該導電圖案層之間;以及形成一折射率匹配保護層覆蓋於該導電圖案層之上,且該折射率匹配保護層的設置使該圖案部分與該非圖案部分的折射率相匹配。 A method for manufacturing a touch sensing device includes the steps of: providing a substrate, the substrate comprising a see-through portion and a peripheral portion, wherein the peripheral portion is located on at least one side of the see-through portion; and forming a portion on the peripheral portion a peripheral lead; forming a bridging element on the see-through portion; forming an index matching layer between the bridging element and the see-through portion; forming a conductive pattern layer on the see-through portion, the conductive pattern layer comprising a pattern portion and a non-pattern portion, the pattern portion includes at least one first axial electrode and a plurality of second conductive units, the first axial electrode being electrically connected to a portion of the peripheral lead, adjacent to the second conductive unit The bridging elements are electrically connected, and the second conductive units are electrically connected to the peripheral lead of another portion; forming an insulating layer, the insulating layer includes a first portion and a second portion, the first portion is covered by The second portion is disposed between the bridging element and the conductive pattern layer; and an index matching protective layer is formed over the conductive pattern layer On, and the refractive index of the protective layer is provided so that the matching portion of the pattern matches the refractive index of the non-patterned portion. 如請求項13所述之製作方法,更包括形成一遮光層於該周邊部與該周邊引線之間。 The manufacturing method of claim 13, further comprising forming a light shielding layer between the peripheral portion and the peripheral lead. 如請求項13所述之製作方法,其中該折射率匹配層更延伸至該周邊部上,且該折射率匹配層係至少部分位於該遮光層與該周邊引線之間。 The method of claim 13, wherein the index matching layer extends further to the peripheral portion, and the index matching layer is at least partially located between the light shielding layer and the peripheral lead. 如請求項13所述之製作方法,其中該基板具有一折射率nS ,該折射率匹配層具有一折射率n1 ,該導電圖案層具有一折射率nT ,且n1 等於nS 與nT 的乘積開根號。The method of claim 13, wherein the substrate has a refractive index n S , the refractive index matching layer has a refractive index n 1 , the conductive pattern layer has a refractive index n T , and n 1 is equal to n S and The product of n T is the root number. 如請求項13所述之製作方法,更包括:提供一顯示面板;於該折射率匹配保護層與該顯示面板之間形成一黏結層,用以黏結該顯示面板與該基板。 The method of claim 13, further comprising: providing a display panel; forming a bonding layer between the index matching protective layer and the display panel for bonding the display panel and the substrate. 如請求項17所述之製作方法,其中該導電圖案層具有一折射率nT ,該折射率匹配保護層具有一折射率n2 ,該黏結層具有一折射率nP ,且n2 等於nP 與nT 的乘積開根號。The method of claim 17, wherein the conductive pattern layer has a refractive index n T , the index matching protective layer has a refractive index n 2 , the bonding layer has a refractive index n P , and n 2 is equal to n The product of P and n T is the root number. 如請求項13所述之製作方法,其中該折射率匹配保護層包括一二氧化鈦(TiO2 )與二氧化矽(SiO2 )的化合物。The method of claim 13, wherein the index matching protective layer comprises a compound of titanium dioxide (TiO 2 ) and cerium oxide (SiO 2 ). 如請求項13所述之製作方法,其中該折射率匹配層包括一二氧化鈦(TiO2 )與二氧化矽(SiO2 )的化合物或一由五氧化二鈮(Nb2 O5 )與二氧化矽(SiO2 )所組成的雙層結構。The method of claim 13, wherein the index matching layer comprises a compound of titanium dioxide (TiO 2 ) and cerium oxide (SiO 2 ) or a cerium oxide (Nb 2 O 5 ) and cerium oxide. A two-layer structure composed of (SiO 2 ). 如請求項13所述之製作方法,其中該絕緣層的該第一部分還包括至少一第一開口,該第一開口係至少暴露部分該周邊引線,且該導電圖案層係透過該第一開口與該周邊引線形成電性連接。 The method of claim 13, wherein the first portion of the insulating layer further comprises at least one first opening, the first opening is at least partially exposed to the peripheral lead, and the conductive pattern layer is transmitted through the first opening The peripheral leads form an electrical connection. 如請求項13所述之製作方法,其中該絕緣層之該第二部分包括複數個相互分離的絕緣塊,各該絕緣塊係位於該橋接元件與該第一軸向電極之間以使該第一軸向電極與該橋接元件相互電性絕緣。 The method of claim 13, wherein the second portion of the insulating layer comprises a plurality of insulating blocks separated from each other, each insulating block being located between the bridging element and the first axial electrode to enable the first An axial electrode is electrically insulated from the bridging element. 如請求項13所述之製作方法,其中該絕緣層的該第一部分包括複數第二開口,該橋接元件透過該等第二開口電性連接該等相鄰第二導電單元。 The method of claim 13, wherein the first portion of the insulating layer comprises a plurality of second openings, and the bridging elements are electrically connected to the adjacent second conductive units through the second openings. 如請求項13所述之製作方法,其中該折射率匹配保護層係由凸板以轉印的方式形成。 The manufacturing method according to claim 13, wherein the index matching protective layer is formed by a convex plate in a transfer manner. 如請求項13所述之製作方法,其中該橋接元件與該周邊引線係由對同一導電材料進行圖案化製程所形成。The method of claim 13, wherein the bridging element and the peripheral lead are formed by a patterning process of the same conductive material.
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