TWI492083B - Gate configuration components with stress amplification - Google Patents

Gate configuration components with stress amplification Download PDF

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TWI492083B
TWI492083B TW103121581A TW103121581A TWI492083B TW I492083 B TWI492083 B TW I492083B TW 103121581 A TW103121581 A TW 103121581A TW 103121581 A TW103121581 A TW 103121581A TW I492083 B TWI492083 B TW I492083B
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李昌駿
謝佳玶
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中原大學
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    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
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Description

具應力放大作用之閘極配置元件
本發明係關於一種具應力放大作用之閘極配置元件，特別是一種設置至少二Y方向啞複晶矽結構，以將接觸蝕刻停止層對電晶體所產生之應力分散至該等Y方向啞複晶矽結構之具應力放大作用之閘極配置元件。
目前元件在不同的電路圖案設計與考量微影製程之穩定度，製造上皆會引入諸如源汲極方向上等間距增加複數個複晶矽結構，以及縮減不同程度之元件擴散區長度，當複雜製程程序與不同應變工程應力源導入元件時，致使提升元件電子遷移率能力之效能大幅降低，且由應變矽引致應力影響之元件性能參數將較難量測，尤其是當應力大小差距2至3個級距之不同應力源施予時，較弱應力源對元件性能影響之效應容易被較強者所掩蓋住。因此，導致應力源所施加之應力是否可增強或是減弱元件性能，不能容易地判斷和鑑別。
因此，如何設計出一當複雜製程程序與不同應變工程應力源導入元件時，仍然可以維持元件電子遷移率的效能之結構，便成為相關廠商以及相關研發人員所共同努力的目標。
本發明人有鑑於接觸蝕刻停止層應力在元件通道寬度對於電晶體閘極所產生的負面影響，進而影響量測參數值之大小之缺失，乃積極著手進行開發，以期可以改進上述既有之缺點，經過不斷地試驗及努力，終於開發出本發明。
本發明之目的，係提供降低接觸蝕刻停止層對電晶體所產生之應力的具應力放大作用之閘極配置元件。
為了達成上述之目的，本發明之具應力放大作用之閘極配置元件，係包括：一元件激活區；至少二源/汲電極，係兩兩成對以由上而下的方向並排設置於該元件激活區之上；一第一X方向複晶矽結構，係設置於該元件激活區之上，將該元件激活區隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極；至少二第二X方向啞複晶矽結構，係左右對稱成對設置於該元件激活區左右二區域之上，且該等第二X方向啞複晶矽結構係包圍兩兩成對之該等源/汲電極；至少二Y方向啞複晶矽結構，係成對且非接觸地設置於該元件激活區之上下二外緣處，並與該元件激活區之上下外緣平行；以及二閘極電極，係設置於該等Y方向啞複晶矽結構之其中之一Y方向啞複晶矽結構上。
在本發明另一實施例之具應力放大作用之閘極配置元件，係包括：一元件激活區；至少二源/汲電極，係兩兩成對以由上而下的方向並排設置於該元件激活區之上；一第一X方向複晶矽結構，係設置於該元件激活區之上，將該元件激活區隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極； 至少二第二X方向啞複晶矽結構，係成對且非接觸地設置於該元件激活區之左右二外緣處，並與該元件激活區之左右外緣平行；至少二Y方向啞複晶矽結構，係成對且非接觸地設置於該元件激活區之上下二外緣處，並與該元件激活區之上下外緣平行；以及二閘極電極，係設置於該等Y方向啞複晶矽結構之其中之一Y方向啞複晶矽結構上。
在本發明又一實施例之具應力放大作用之閘極配置元件，係包括：二元件激活區，係由上而下左右對齊的排列，該等元件激活區之間留一空隙；至少四源/汲電極，係兩兩成對以由上而下的方向並排設置於該等元件激活區之上；一第一X方向複晶矽結構，係設置於該等元件激活區之上，將該等元件激活區各自隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極；至少二第二X方向啞複晶矽結構，係左右對稱成對設置於該等元件激活區左右二區域之上，且該等第二X方向啞複晶矽結構係包圍兩兩成對之該等源/汲電極；至少二Y方向啞複晶矽結構，係成對且非接觸地設置於上面之該元件激活區之上邊緣處，以及下面之該元件激活區之下邊緣處，並分別與上面之該元件激活區之上邊緣處，以及下面之該元件激活區之下邊緣處平行；以及一閘極電極，係設置於該第一X方向複晶矽結構之正中間處上面。
透過上述之結構，本發明可將接觸蝕刻停止層對電晶體所產生之應力分散至該等Y方向啞複晶矽結構，以放大與調控所需元件方向上的應力，因此當 複雜製程程序與不同應變工程應力源導入元件時，仍然可以維持元件電子遷移率之效能。
(1)‧‧‧具應力放大作用之閘極配置元件
(10)‧‧‧元件激活區
(11)‧‧‧源/汲電極
(12)‧‧‧第一X方向複晶矽結構
(13)‧‧‧第二X方向啞複晶矽結構
(14)‧‧‧Y方向啞複晶矽結構
(15)‧‧‧閘極電極
(16)‧‧‧置中Y方向啞複晶矽結構
圖1係本發明之具應力放大作用之閘極配置元件之第一實施例。
圖2係本發明之具應力放大作用之閘極配置元件之第二實施例。
圖3係本發明之具應力放大作用之閘極配置元件之第三實施例。
圖4係本發明之具應力放大作用之閘極配置元件之第四實施例。
圖5係本發明之具應力放大作用之閘極配置元件之第五實施例。
圖6係本發明之具應力放大作用之閘極配置元件之第六實施例。
圖7係本發明之具應力放大作用之閘極配置元件之第七實施例。
圖8係本發明之具應力放大作用之閘極配置元件之第八實施例。
圖9係本發明之具應力放大作用之閘極配置元件之第九實施例。
為使熟悉該項技藝人士瞭解本發明之目的，茲配合圖式將本發明之較佳實施例詳細說明如下。
請參考圖1至圖3所示，本發明之具應力放大作用之閘極配置元件(1)係包括一元件激活區(10)、至少二源/汲電極(11)、一第一X方向複晶矽結構(12)、至少二第二X方向啞複晶矽結構(13)、至少二Y方向啞複晶矽結構(14)以及二閘極電極(15)。
該等源/汲電極(11)係兩兩成對以由上而下的方向並排設置於該元件激活區(10)之上。
該第一X方向複晶矽結構(12)係設置於該元件激活區(10)之上，將該元件激活區(10)隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極(11)。
該等第二X方向啞複晶矽結構(13)係左右對稱成對設置於該元件激活區(10)左右二區域之上，且該等第二X方向啞複晶矽結構(13)係包圍兩兩成對之該等源/汲電極(11)。
該等Y方向啞複晶矽結構(14)係成對且非接觸地設置於該元件激活區(10)之上下二外緣處，並與該元件激活區(10)之上下外緣平行。
該等閘極電極(15)係設置於該等Y方向啞複晶矽結構(14)之其中之一Y方向啞複晶矽結構(14)上。
其中該等Y方向啞複晶矽結構(14)係與該第一X方向複晶矽結構(12)垂直，且該等Y方向啞複晶矽結構(14)之中心處係分別與該第一X方向複晶矽結構(12)之二端連接。
在該元件激活區(10)的兩個垂直邊緣的外側，該等Y方向啞複晶矽結構(14)長度沿水平方向延伸。因此使具應力之接觸蝕刻停止層在測試元件裝置所產生之應力影響被打破而減低，從而在元件通道長度方向上的各種應力源引致之應力靈敏度顯著擴增。此外，該等Y方向啞複晶矽結構(14)與該第一X方向複晶矽結構(12)以及該等第二X方向啞複晶矽結構(13)組合使用將進一步提高元件通道內之應力作用的放大。
請參考圖4至圖6所示，本發明另一實施例之具應力放大作用之閘極配置元件(1)係包括一元件激活區(10)、至少二源/汲電極(11)、一第一X方向複晶矽結構(12)、至少二第二X方向啞複晶矽結構(13)、至少二Y方向啞複晶矽結構(14)以及二閘極電極(15)。
該等源/汲電極(11)係兩兩成對以由上而下的方向並排設置於該元件激活區(10)之上。
該第一X方向複晶矽結構(12)係設置於該元件激活區(10)之上，將該元件激活區(10)隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極(11)。
該等第二X方向啞複晶矽結構(13)係成對且非接觸地設置於該元件激活區(10)之左右二外緣處，並與該元件激活區(10)之左右外緣平行。
該等Y方向啞複晶矽結構(14)係成對且非接觸地設置於該元件激活區(10)之上下二外緣處，並與該元件激活區(10)之上下外緣平行。
該閘極電極(15)係設置於該等Y方向啞複晶矽結構(14)之其中之一Y方向啞複晶矽結構(14)上。
其中該等Y方向啞複晶矽結構(14)係與該第一X方向複晶矽結構(12)垂直，且該等Y方向啞複晶矽結構(14)之中心處係分別與該第一X方向複晶矽結構(12)之二端連接。
請參考圖7至圖9所示，本發明又一實施例之具應力放大作用之閘極配置元件(1)係包括二元件激活區(10)、至少四源/汲電極(11)、一第一X方向複晶矽結構(12)、至少二第二X方向啞複晶矽結構(13)、至少二Y方向啞複晶矽結構(14)以及一閘極電極(15)。
該等元件激活區(10)係由上而下左右對齊的排列，該等元件激活區(10)之間留一空隙。
該等源/汲電極(11)係兩兩成對以由上而下的方向並排設置於該等元件激活區(10)之上。
該第一X方向複晶矽結構(12)係設置於該等元件激活區(10)之上，將該等元件激活區(10)各自隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極(11)。
該等第二X方向啞複晶矽結構(13)係左右對稱成對設置於該等元件激活區(10)左右二區域之上，且該等第二X方向啞複晶矽結構(13)係包圍兩兩成對之該等源/汲電極(11)。
該等Y方向啞複晶矽結構(14)係成對且非接觸地設置於上面之該元件激活區(10)之上邊緣處，以及下面之該元件激活區(10)之下邊緣處，並分別與上面之該元件激活區(10)之上邊緣處，以及下面之該元件激活區(10)之下邊緣處平行。
該閘極電極(15)係設置於該第一X方向複晶矽結構(12)之正中間處上面。
在本發明之一實施例中，本發明又一實施例之具應力放大作用之閘極配置元件(1)更包括至少一置中Y方向啞複晶矽結構(16)，該置中Y方向啞複晶矽結構(16)係設置於該等元件激活區(10)之間，並分別與上面之該元件激活區(10)之下邊緣處，以及下面之該元件激活區(10)之上邊緣處平行。
其中該等Y方向啞複晶矽結構(14)係與該第一X方向複晶矽結構(12)垂直。
請參考圖1至圖3以及圖7至圖9所示，當該等元件激活區(10)範圍較小情況下，可將該等該第一X方向複晶矽結構(12)以及該等第二X方向啞複晶矽結構(13)建立在該等Y方向啞複晶矽結構(14)之內，在該等元件激活區(10)的側邊。
請參考圖4至圖6所示，當該等元件激活區(10)範圍較大情況下，縮短該等Y方向啞複晶矽結構(14)之長度，並將該等第二X方向啞複晶矽結構(13)延伸至該等Y方向啞複晶矽結構(14)與該元件激活區(10)之邊緣。
請參考圖8至圖9所示，在該等元件激活區(10)之間設置至少一置中Y方向啞複晶矽結構(16)，可對該等元件激活區(10)的應力效應在同一時間給予加強。
透過上述之結構，本發明可將接觸蝕刻停止層對電晶體所產生之應力分散至該等Y方向啞複晶矽結構，減少因觸觸蝕刻停止層之應變矽製程所產生之應力對電晶體元件性能降低或損壤，放大應力量測敏感度，並提高晶片操作效率，不需要額外的製程加工步驟。再者，其結構型態並非所屬技術領域中之人士所能輕易思及而達成者，實具有新穎性以及進步性無疑。
透過上述之詳細說明，即可充分顯示本發明之目的及功效上均具有實施之進步性，極具產業之利用性價值，且為目前市面上前所未見之新發明，完全符合發明專利要件，爰依法提出申請。唯以上所述著僅為本發明之較佳實施例而已，當不能用以限定本發明所實施之範圍。即凡依本發明專利範圍所作之均等變化與修飾，皆應屬於本發明專利涵蓋之範圍內，謹請 貴審查委員明鑑，並祈惠准，是所至禱。
(1)‧‧‧具應力放大作用之閘極配置元件
(10)‧‧‧元件激活區
(11)‧‧‧源/汲電極
(12)‧‧‧第一X方向複晶矽結構
(13)‧‧‧第二X方向啞複晶矽結構
(14)‧‧‧Y方向啞複晶矽結構
(15)‧‧‧閘極電極

Claims (7)

  1. 一種具應力放大作用之閘極配置元件，係包括：一元件激活區；至少二源/汲電極，係兩兩成對以由上而下的方向並排設置於該元件激活區之上；一第一X方向複晶矽結構，係設置於該元件激活區之上，將該元件激活區隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極；至少二第二X方向啞複晶矽結構，係左右對稱成對設置於該元件激活區左右二區域之上，且該等第二X方向啞複晶矽結構係包圍兩兩成對之該等源/汲電極；至少二Y方向啞複晶矽結構，係成對且非接觸地設置於該元件激活區之上下二外緣處，並與該元件激活區之上下外緣平行；以及二閘極電極，係設置於該等Y方向啞複晶矽結構之其中之一Y方向啞複晶矽結構上。
  2. 如申請專利範圍第1項之具應力放大作用之閘極配置元件，其中該等Y方向啞複晶矽結構係與該第一X方向複晶矽結構垂直，且該等Y方向啞複晶矽結構之中心處係分別與該第一X方向複晶矽結構之二端連接。
  3. 一種具應力放大作用之閘極配置元件，係包括：一元件激活區；至少二源/汲電極，係兩兩成對以由上而下的方向並排設置於該元件激活區之上； 一第一X方向複晶矽結構，係設置於該元件激活區之上，將該元件激活區隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極；至少二第二X方向啞複晶矽結構，係成對且非接觸地設置於該元件激活區之左右二外緣處，並與該元件激活區之左右外緣平行；至少二Y方向啞複晶矽結構，係成對且非接觸地設置於該元件激活區之上下二外緣處，並與該元件激活區之上下外緣平行；以及二閘極電極，係設置於該等Y方向啞複晶矽結構之其中之一Y方向啞複晶矽結構上。
  4. 如申請專利範圍第3項之具應力放大作用之閘極配置元件，其中該等Y方向啞複晶矽結構係與該第一X方向複晶矽結構垂直，且該等Y方向啞複晶矽結構之中心處係分別與該第一X方向複晶矽結構之二端連接。
  5. 一種具應力放大作用之閘極配置元件，係包括：二元件激活區，係由上而下左右對齊的排列，該等元件激活區之間留一空隙；至少四源/汲電極，係兩兩成對以由上而下的方向並排設置於該等元件激活區之上；一第一X方向複晶矽結構，係設置於該等元件激活區之上，將該等元件激活區各自隔成二面積相等之區域，並隔開兩兩成對之該等源/汲電極；至少二第二X方向啞複晶矽結構，係左右對稱成對設置於該等元件激活區左右二區域之上，且該等第二X方向啞複晶矽結構係包圍兩兩成對之該等源/汲電極； 至少二Y方向啞複晶矽結構，係成對且非接觸地設置於上面之該元件激活區之上邊緣處，以及下面之該元件激活區之下邊緣處，並分別與上面之該元件激活區之上邊緣處，以及下面之該元件激活區之下邊緣處平行；以及一閘極電極，係設置於該第一X方向複晶矽結構之正中間處上面。
  6. 如申請專利範圍第5項之具應力放大作用之閘極配置元件，更包括至少一置中Y方向啞複晶矽結構，係設置於該等元件激活區之間，並分別與上面之該元件激活區之下邊緣處，以及下面之該元件激活區之上邊緣處平行。
  7. 如申請專利範圍第5或6項之具應力放大作用之閘極配置元件，其中該等Y方向啞複晶矽結構係與該第一X方向複晶矽結構垂直。
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