TWI491979B - A photosensitive resin composition, a photosensitive resin laminate, and a photoresist pattern - Google Patents

A photosensitive resin composition, a photosensitive resin laminate, and a photoresist pattern Download PDF

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TWI491979B
TWI491979B TW099125162A TW99125162A TWI491979B TW I491979 B TWI491979 B TW I491979B TW 099125162 A TW099125162 A TW 099125162A TW 99125162 A TW99125162 A TW 99125162A TW I491979 B TWI491979 B TW I491979B
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photosensitive resin
group
mass
resin composition
compound
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TW099125162A
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TW201111911A (en
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Go Nishizawa
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Asahi Kasei E Materials Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0076Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12Using specific substances
    • H05K2203/122Organic non-polymeric compounds, e.g. oil, wax, thiol
    • H05K2203/124Heterocyclic organic compounds, e.g. azole, furan

Description

感光性樹脂組合物、感光性樹脂積層體及光阻圖案之形成方法Photosensitive resin composition, photosensitive resin laminate, and method for forming photoresist pattern

本發明係關於一種能夠利用鹼性水溶液顯影之感光性樹脂組合物、將該感光性樹脂組合物積層於支持體上而形成之感光性樹脂積層體、使用該感光性樹脂積層體於基板上形成光阻圖案之方法、及該光阻圖案之用途。更詳細而言,係關於在以下製造中可賦予較佳之光阻圖案的感光性樹脂組合物:印刷線路板之製造、可撓性印刷線路板之製造、IC晶片搭載用導線架(以下稱為導線架)之製造、以金屬掩模製造為代表之金屬箔精密加工、以BGA(Ball Grid Array,球柵陣列)及CSP(Chip Size Package,晶片尺寸封裝)為代表之半導體封裝體之製造、以TAB(Tape Automated Bonding,捲帶式自動接合)及COF(Chip on Film,薄膜覆晶:將半導體IC搭載於膜狀微細線路板上者)為代表之捲帶基板之製造、半導體凸塊之製造、以平板顯示器(flat panel display)領域中之ITO(Indium Tin Oxide,氧化銦錫)電極、定址電極及電磁波遮罩為代表之隔離壁構件之製造、以及藉由噴砂工法加工基材時之保護掩模構件之製造中。The present invention relates to a photosensitive resin composition which can be developed with an aqueous alkaline solution, a photosensitive resin laminate formed by laminating the photosensitive resin composition on a support, and formed on the substrate using the photosensitive resin laminate. A method of a photoresist pattern and the use of the photoresist pattern. More specifically, it relates to a photosensitive resin composition which can provide a preferable photoresist pattern in the following production: manufacture of a printed wiring board, manufacture of a flexible printed wiring board, and lead frame for IC wafer mounting (hereinafter referred to as Manufacture of a lead frame, fabrication of a metal foil represented by a metal mask, and fabrication of a semiconductor package represented by a BGA (Ball Grid Array) and a CSP (Chip Size Package) Manufacture of a tape substrate, such as TAB (Tape Automated Bonding) and COF (Chip on Film, film-on-film: a semiconductor IC mounted on a film-shaped micro-board) Manufacturing, partitioning member members represented by ITO (Indium Tin Oxide) electrodes, address electrodes, and electromagnetic wave masks in the field of flat panel display, and processing of substrates by a sandblasting method The manufacture of the protective mask member.

先前,印刷線路板係藉由光微影法(photolithography method)而製造。作為光微影法,例如可列舉以下方法:於負型之情形時,將感光性樹脂組合物塗佈於基板上,進行圖案曝光而使該感光性樹脂組合物之曝光部分聚合硬化,並藉由顯影液去除未曝光部分而於基板上形成光阻圖案,實施蝕刻或鍍敷處理而形成導體圖案後,將該光阻圖案自該基板上剝離去除,藉此於基板上形成導體圖案。Previously, printed wiring boards were manufactured by a photolithography method. The photolithography method is, for example, a method in which a photosensitive resin composition is applied onto a substrate in a negative form, and pattern exposure is performed to thermally cure and expose the exposed portion of the photosensitive resin composition. A photoresist pattern is formed on the substrate by removing the unexposed portion from the developer, and etching or plating is performed to form a conductor pattern, and then the photoresist pattern is peeled off from the substrate to form a conductor pattern on the substrate.

於上述光微影法中可使用以下方法中之任一者:將感光性樹脂組合物塗佈於基板上時,將感光性樹脂組合物溶液作為光阻溶液塗佈於基板上並使之乾燥的方法;或使將支持體、包含感光性樹脂組合物之層(以下亦稱為「感光性樹脂層」)、及視需要之保護層依序積層而成之感光性樹脂積層體(以下亦稱為「乾膜光阻」)積層於基板上的方法。並且,於印刷線路板之製造中,多數情況係使用後者之乾膜光阻。In the photolithography method, any of the following methods may be used: when the photosensitive resin composition is applied onto a substrate, the photosensitive resin composition solution is applied as a photoresist solution to the substrate and dried. Or a photosensitive resin laminate in which a support, a layer containing a photosensitive resin composition (hereinafter also referred to as "photosensitive resin layer"), and an optional protective layer are sequentially laminated (hereinafter also A method called "dry film photoresist") laminated on a substrate. Moreover, in the manufacture of printed wiring boards, the dry film photoresist of the latter is often used.

以下對使用上述乾膜光阻而製造印刷線路板之方法進行簡單闡述。Hereinafter, a method of manufacturing a printed wiring board using the above dry film photoresist will be briefly described.

首先,於乾膜光阻具有保護層、例如聚乙烯膜之情形時,自感光性樹脂層將其剝離。繼而,使用貼合機於基板(例如銅箔積層板)上以該基板、感光性樹脂層、支持體(例如聚對苯二甲酸乙二酯)之順序積層感光性樹脂層及支持體。繼而經由具有線路圖案之光罩,利用超高壓水銀燈發出之i射線(波長365 nm)等紫外線對該感光性樹脂層進行曝光,藉此使曝光部分聚合硬化。繼而將支持體剝離。接著藉由顯影液、例如具有弱鹼性之水溶液將感光性樹脂層之未曝光部分溶解或分散去除,而於基板上形成光阻圖案。First, when the dry film photoresist has a protective layer such as a polyethylene film, it is peeled off from the photosensitive resin layer. Then, a photosensitive resin layer and a support are laminated on the substrate (for example, a copper foil laminate) using a bonding machine in the order of the substrate, the photosensitive resin layer, and the support (for example, polyethylene terephthalate). Then, the photosensitive resin layer is exposed by ultraviolet rays such as i-rays (wavelength: 365 nm) emitted from an ultrahigh pressure mercury lamp through a mask having a line pattern, whereby the exposed portion is polymerized and cured. The support is then peeled off. Then, the unexposed portion of the photosensitive resin layer is dissolved or dispersed by a developing solution, for example, an aqueous solution having a weak alkalinity, to form a photoresist pattern on the substrate.

作為使用以上述方式形成之基板上的光阻圖案而製作金屬導體圖案之方法,大致分為2種方法,有藉由蝕刻而去除未經光阻被覆之金屬部分之方法、及藉由鍍敷而敷設金屬之方法。特別是最近,就步驟之簡便性而言,大多使用前者之方法。A method of forming a metal conductor pattern using a photoresist pattern on a substrate formed in the above manner is roughly classified into two methods, a method of removing a metal portion which is not photoresist-coated by etching, and a plating method. And the method of laying metal. Especially recently, in terms of the simplicity of the steps, the former method is mostly used.

於藉由蝕刻而去除金屬部分之方法中,通常利用硬化光阻膜覆蓋基板之貫通孔(through hole)及用於層間連接之通孔(via hole),而使孔內之金屬不受到蝕刻。將該工法稱為蓋孔法。於蝕刻步驟中,例如可使用氯化銅溶液、氯化鐵溶液或銅氨錯合物溶液。In the method of removing a metal portion by etching, a through hole of a substrate and a via hole for interlayer connection are usually covered with a cured photoresist film, so that the metal in the hole is not etched. This method is called the cover hole method. In the etching step, for example, a copper chloride solution, a ferric chloride solution or a copper ammonia complex solution can be used.

最近,隨著印刷線路板之生產量增加,而要求應對高生產之高感度乾膜光阻。又存在以下傾向:於曝光後導入檢測機而於生產線之早期階段發現例如由異物所致之缺陷,藉此欲使生產性提高。曝光後之缺陷檢測機之判定通常係識別未曝光部分與曝光部分而進行者,因此現狀為要求剛曝光後之感光性樹脂層具有極為良好的剛曝光後之對比度。Recently, as the production of printed wiring boards has increased, it has been demanded to cope with high-sensitivity dry film photoresists. Further, there is a tendency to introduce a detecting machine after exposure and to find defects such as foreign matter in an early stage of the production line, thereby improving productivity. The determination of the defect detecting machine after the exposure is usually performed by identifying the unexposed portion and the exposed portion. Therefore, it is required that the photosensitive resin layer immediately after exposure has an extremely good contrast immediately after exposure.

又,另一方面,於印刷線路板製造技術中,可見藉由雷射所進行之直接刻寫、即無需光罩之無光罩曝光在近年迅速推廣。作為無光罩曝光之光源,多數情況係使用波長為350~410 nm之光、特別是i射線或h射線(波長405 nm)。於無光罩曝光中,為於曝光時對準基板而需要對準標記(alignment mark)。該對準標記係藉由在圖案曝光前僅預先使對準標記曝光而製作。因此,若於剛曝光後感光性樹脂層不具有良好的剛曝光後之對比度,則至圖案曝光為止之節拍時間(takt time)變長,單位時間之生產量變差。因此,現狀為要求剛曝光後之感光性樹脂層具有極為良好的剛曝光後之對比度。Moreover, on the other hand, in the manufacturing technology of printed wiring boards, it can be seen that direct writing by laser, that is, maskless exposure without a mask, has been rapidly spread in recent years. As a light source for the exposure of the mask, in most cases, light having a wavelength of 350 to 410 nm, particularly i-rays or h-rays (wavelength 405 nm), is used. In the reticle exposure, an alignment mark is required to align the substrate during exposure. The alignment mark is produced by exposing only the alignment mark in advance before pattern exposure. Therefore, if the photosensitive resin layer does not have a good contrast immediately after exposure immediately after exposure, the takt time until the pattern exposure becomes long, and the throughput per unit time is deteriorated. Therefore, the current state of the art requires that the photosensitive resin layer immediately after exposure has an extremely good contrast immediately after exposure.

迄今為止,已揭示有大量關於感光性樹脂組合物及感光性樹脂積層體之文獻,關於提高剛曝光後之對比度之文獻亦大量存在(參照專利文獻1~3)。A large number of documents relating to a photosensitive resin composition and a photosensitive resin laminate have been disclosed, and a large number of documents for improving the contrast immediately after exposure have been disclosed (see Patent Documents 1 to 3).

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1] 日本專利特開2000-241971號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-241971

[專利文獻2] 日本專利特開2002-053621號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2002-053621

[專利文獻3] 日本專利特開2001-209177號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2001-209177

[專利文獻4] 日本專利特開2008-287227號公報[Patent Document 4] Japanese Patent Laid-Open Publication No. 2008-287227

但是,現狀為即便利用上述文獻所提出之技術,剛曝光後之對比度仍不充分。本發明之目的在於提供一種能夠克服上述問題、於剛曝光後具有極為良好的對比度、解像度及感度優異、進而於特定態樣中可抑制剝離時殘膜性降低的感光性樹脂組合物;以及使用其之感光性樹脂積層體及光阻圖案之形成方法。However, the current situation is that even with the technique proposed in the above documents, the contrast immediately after exposure is insufficient. An object of the present invention is to provide a photosensitive resin composition which can overcome the above-mentioned problems, has excellent contrast, excellent resolution and sensitivity after exposure, and can suppress a decrease in residual film property in peeling in a specific aspect; A method of forming a photosensitive resin laminate and a photoresist pattern.

為解決上述課題而反覆銳意研究之結果發現,藉由使用特定噻二唑化合物作為感光性樹脂組合物之成分,可解決上述課題,從而完成本發明。即本發明如以下所述。As a result of intensive research to solve the above problems, it has been found that the above problems can be solved by using a specific thiadiazole compound as a component of the photosensitive resin composition, and the present invention has been completed. That is, the present invention is as follows.

(1) 一種感光性樹脂組合物,其包含:(a)含有羧酸、酸當量為100~600、重量平均分子量為5,000~500,000之鹼溶性高分子:20~80質量%;(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體:5~60質量%;(c)含有N-芳基-α-胺基酸化合物之光聚合起始劑:0.1~20質量%;(d)隱色染料:0.1~10質量%;及(e)下述通式(I)所示之巰基噻二唑化合物:0.01~5質量%:(1) A photosensitive resin composition comprising: (a) an alkali-soluble polymer containing a carboxylic acid having an acid equivalent of 100 to 600 and a weight average molecular weight of 5,000 to 500,000: 20 to 80% by mass; (b) containing Ethylenically unsaturated addition polymerizable monomer of at least one compound having an acrylonitrile group: 5 to 60% by mass; (c) Photopolymerization initiator containing N-aryl-α-amino acid compound: 0.1 ~20% by mass; (d) leuco dye: 0.1 to 10% by mass; and (e) a mercaptothiadiazole compound represented by the following formula (I): 0.01 to 5% by mass:

[化1][Chemical 1]

{式中,R1 表示選自由碳數1~9之烷基、碳數1~9之烷氧基、碳數1~16之烷硫基、巰基、胺基及碳數1~9之烷基胺基所組成之群中之1種基}。In the formula, R 1 represents an alkyl group selected from the group consisting of an alkyl group having 1 to 9 carbon atoms, an alkoxy group having 1 to 9 carbon atoms, an alkylthio group having 1 to 16 carbon atoms, an anthracenyl group, an amine group, and an alkyl group having 1 to 9 carbon atoms. One of the groups consisting of a group of amino groups}.

(2) 如上述(1)之感光性樹脂組合物,其中上述(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體中之具有丙烯醯基的化合物係下述通式(II)所示之化合物:(2) The photosensitive resin composition according to the above (1), wherein the (b) ethylenically unsaturated addition polymerizable monomer having at least one compound having an acrylonitrile group has a propylene group; a compound represented by the following formula (II):

[化2][Chemical 2]

{式中,R2 、R3 、R4 及R5 表示H,X及Y分別獨立表示碳數2~4之伸烷基,X及Y互不相同,p1 、p2 、p3 、p4 、p5 、p6 、p7 及p8 分別獨立為0或正整數,p1 、p2 、p3 、p4 、p5 、p6 、p7 及p8 之合計為0~20的整數}。Wherein R 2 , R 3 , R 4 and R 5 represent H, and X and Y each independently represent an alkylene group having 2 to 4 carbon atoms, and X and Y are different from each other, p 1 , p 2 , p 3 , p 4 , p 5 , p 6 , p 7 and p 8 are each independently 0 or a positive integer, and the total of p 1 , p 2 , p 3 , p 4 , p 5 , p 6 , p 7 and p 8 is 0~ An integer of 20}.

(3) 如上述(1)或(2)之感光性樹脂組合物,其中上述(e)巰基噻二唑化合物為選自由5-甲硫基-2-巰基-1,3,4-噻二唑、2-胺基-5-巰基-1,3,4-噻二唑、5-甲基胺基-2-巰基-1,3,4-噻二唑及2,5-二巰基-1,3,4-噻二唑所組成之群中之至少1種化合物。(3) The photosensitive resin composition according to the above (1) or (2), wherein the (e) mercaptothiadiazole compound is selected from the group consisting of 5-methylthio-2-mercapto-1,3,4-thiadi Azole, 2-amino-5-mercapto-1,3,4-thiadiazole, 5-methylamino-2-mercapto-1,3,4-thiadiazole and 2,5-dimercapto-1 And at least one compound of the group consisting of 3,4-thiadiazole.

(4) 如上述(1)至(3)中任一項之感光性樹脂組合物,其中上述(c)光聚合起始劑所含有之上述N-芳基-α-胺基酸化合物為N-苯基甘胺酸。(4) The photosensitive resin composition according to any one of the above (1), wherein the (N) photopolymerization initiator contains the N-aryl-α-amino acid compound as N -Phenylglycine.

(5) 如上述(1)至(4)中任一項之感光性樹脂組合物,其中上述(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體包含選自由下述通式(III)所示之能夠光聚合之不飽和化合物中的至少1種:(5) The photosensitive resin composition according to any one of the above (1), wherein the (b) ethylenically unsaturated addition polymerizable monomer containing at least one compound having an acrylonitrile group contains At least one of the photopolymerizable unsaturated compounds represented by the following formula (III) is selected:

[化3][Chemical 3]

{式中,R6 及R7 分別獨立表示H或CH3 ,A表示C2 H4 ,B表示C3 H6 ,n1+n2為2~30之整數,n3+n4為0~30之整數,n1及n2分別獨立為1~29之整數,n3及n4分別獨立為0~30之整數,並且-(A-O)-及-(B-O)-之重複單元的排列既可為無規亦可為嵌段}。In the formula, R 6 and R 7 each independently represent H or CH 3 , A represents C 2 H 4 , B represents C 3 H 6 , n1+n2 is an integer of 2 to 30, and n3+n4 is an integer of 0 to 30. , n1 and n2 are independently integers from 1 to 29, n3 and n4 are each independently an integer from 0 to 30, and the arrangement of repeating units of -(AO)- and -(BO)- can be either random or Block}.

(6) 一種感光性樹脂積層體,其係於包含基材膜之支持體上積層包含如上述(1)至(5)中任一項之感光性樹脂組合物之感光性樹脂層而成。(6) A photosensitive resin laminate in which a photosensitive resin layer containing the photosensitive resin composition according to any one of the above (1) to (5) is laminated on a support comprising a base film.

(7) 一種光阻圖案之形成方法,其包括如下步驟:積層步驟,將如上述(6)之感光性樹脂積層體積層於基板上;曝光步驟,對感光性樹脂積層體中之感光性樹脂層進行曝光;及顯影步驟,將感光性樹脂層之未曝光部分顯影去除。(7) A method of forming a photoresist pattern, comprising the steps of: laminating a layer of a photosensitive resin layer as described in (6) above; and exposing the photosensitive resin in the photosensitive resin layered body The layer is exposed; and the developing step is performed to remove the unexposed portion of the photosensitive resin layer.

(8) 如上述(7)之光阻圖案之形成方法,其中藉由刻寫圖案之直接刻寫而進行上述曝光步驟。(8) The method of forming a photoresist pattern according to (7) above, wherein the exposing step is performed by direct writing of the writing pattern.

根據本發明,提供一種於剛曝光後具有極為良好的對比度、解像度及感度優異、進而於特定態樣中能夠抑制剝離時殘膜性降低的感光性樹脂組合物;以及使用其之感光性樹脂積層體及光阻圖案之形成方法。According to the present invention, there is provided a photosensitive resin composition which is excellent in contrast, resolution and sensitivity immediately after exposure, and which can suppress a decrease in residual film property in peeling in a specific aspect; and a photosensitive resin layer using the same A method of forming a body and a photoresist pattern.

以下,對本發明進行具體說明。Hereinafter, the present invention will be specifically described.

<感光性樹脂組合物><Photosensitive Resin Composition>

本發明提供一種感光性樹脂組合物,其包含:(a)含有羧酸、酸當量為100~600、重量平均分子量為5,000~500,000之鹼溶性高分子(於本說明書中稱為(a)鹼溶性高分子):20~80質量%;(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體(於本說明書中稱為(b)乙烯性不飽和加成聚合性單體):5~60質量%;(c)含有N-芳基-α-胺基酸化合物之光聚合起始劑(於本說明書中稱為(c)光聚合起始劑):0.1~20質量%;(d)隱色染料:0.1~10質量%;及(e)下述通式(I)所示之巰基噻二唑化合物(於本說明書中稱為(e)巰基噻二唑化合物):0.01~5質量%:The present invention provides a photosensitive resin composition comprising: (a) an alkali-soluble polymer containing a carboxylic acid, an acid equivalent of 100 to 600, and a weight average molecular weight of 5,000 to 500,000 (referred to as (a) a base in the present specification. Soluble polymer): 20 to 80% by mass; (b) an ethylenically unsaturated addition polymerizable monomer containing at least one compound having an acrylonitrile group (referred to as (b) ethylenically unsaturated in the present specification a polymerizable monomer): 5 to 60% by mass; (c) a photopolymerization initiator containing an N-aryl-α-amino acid compound (referred to as (c) photopolymerization initiator in the present specification) : 0.1 to 20% by mass; (d) leuco dye: 0.1 to 10% by mass; and (e) a mercaptothiadiazole compound represented by the following formula (I) (referred to as (e) mercapto group in the present specification Thiadiazole compound): 0.01 to 5% by mass:

[化4][Chemical 4]

{式中,R1 表示選自由碳數1~9之烷基、碳數1~9之烷氧基、碳數1~16之烷硫基、巰基、胺基、及碳數1~9之烷基胺基所組成之群中之1種基}。In the formula, R 1 represents an alkyl group selected from a carbon number of 1 to 9, an alkoxy group having 1 to 9 carbon atoms, an alkylthio group having 1 to 16 carbon atoms, an anthracenyl group, an amine group, and a carbon number of 1 to 9. One of the groups consisting of alkylamino groups}.

(a)鹼溶性高分子(a) alkali soluble polymer

本發明之感光性樹脂組合物中之(a)鹼溶性高分子係含有羧酸、酸當量為100~600、重量平均分子量為5,000~500,000之鹼溶性高分子。In the photosensitive resin composition of the present invention, the (a) alkali-soluble polymer contains an alkali-soluble polymer having a carboxylic acid, an acid equivalent of 100 to 600, and a weight average molecular weight of 5,000 to 500,000.

為使感光性樹脂組合物對包含鹼性水溶液之顯影液及剝離液具有顯影性及剝離性,(a)鹼溶性高分子之羧基係必需者。(a)鹼溶性高分子之酸當量為100~600,較佳為250~450。就確保與溶劑、或感光性樹脂組合物中之其他成分、特別是後述(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體之相溶性的觀點而言,上述酸當量為100以上,又,就維持顯影性及剝離性之觀點而言,為600以下。此處所謂酸當量,係指於其中具有1當量羧基之鹼溶性高分子之質量(克)。再者,酸當量之測定係使用Hiranuma Reporting Titrator(COM-555),利用0.1 mol/L之NaOH水溶液藉由電位差滴定法進行。In order to make the photosensitive resin composition developable and releasable to the developing solution and the peeling liquid containing an alkaline aqueous solution, (a) the carboxyl group of the alkali-soluble polymer is required. (a) The alkali-soluble polymer has an acid equivalent of from 100 to 600, preferably from 250 to 450. From the viewpoint of ensuring compatibility with the solvent or other components in the photosensitive resin composition, particularly the ethylenically unsaturated addition polymerizable monomer containing at least one compound having an acrylonitrile group (b) described later. The acid equivalent is 100 or more, and is 600 or less from the viewpoint of maintaining developability and peelability. The acid equivalent here means the mass (gram) of the alkali-soluble polymer having one equivalent of a carboxyl group. Further, the acid equivalent was measured by a potentiometric titration method using a Hiranuma Reporting Titrator (COM-555) using a 0.1 mol/L NaOH aqueous solution.

(a)鹼溶性高分子之重量平均分子量為5,000~500,000。就均勻地維持感光性樹脂層之厚度、獲得對顯影液之耐性的觀點而言,為5,000以上,又,就維持顯影性之觀點而言,為500,000以下。更好的是重量平均分子量為20,000~100,000。於本說明書中,所謂重量平均分子量,係指藉由凝膠滲透層析儀(GPC,Gel Permeation Chromatography),使用聚苯乙烯(例如昭和電工股份有限公司製造之Shodex STANDARD SM-105)之校準曲線所測定之重量平均分子量。該重量平均分子量更典型的是可使用日本分光股份有限公司製造之凝膠滲透層析儀,按以下條件進行測定。(a) The alkali-soluble polymer has a weight average molecular weight of 5,000 to 500,000. From the viewpoint of maintaining the thickness of the photosensitive resin layer uniformly and obtaining the resistance to the developer, it is 5,000 or more, and is 500,000 or less from the viewpoint of maintaining developability. More preferably, the weight average molecular weight is from 20,000 to 100,000. In the present specification, the weight average molecular weight refers to a calibration curve using polystyrene (for example, Shodex STANDARD SM-105 manufactured by Showa Denko Co., Ltd.) by gel permeation chromatography (GPC, Gel Permeation Chromatography). The weight average molecular weight determined. The weight average molecular weight is more typically measured by a gel permeation chromatography instrument manufactured by JASCO Corporation, under the following conditions.

示差折射儀:RI-1530Differential refractometer: RI-1530

泵:PU-1580Pump: PU-1580

除氣器:DG-9-80-50Deaerator: DG-9-80-50

管柱烘箱:CO-1560Column oven: CO-1560

管柱:依序為KF-802.5、KF-806M×2、KF-807Column: in order, KF-802.5, KF-806M×2, KF-807

溶離液:THFDissolution: THF

(a) 鹼溶性高分子較佳為後述第一單體之1種以上與後述第二單體之1種以上的共聚物。(a) The alkali-soluble polymer is preferably a copolymer of one or more of the first monomers described later and one or more of the second monomers described later.

第一單體係分子中具有1個聚合性不飽和基之羧酸或羧酸酐。例如可列舉:(甲基)丙烯酸、反丁烯二酸、肉桂酸、丁烯酸、衣康酸、順丁烯二酸酐及順丁烯二酸半酯。其中特佳為(甲基)丙烯酸。A carboxylic acid or a carboxylic acid anhydride having one polymerizable unsaturated group in the first single system molecule. For example, (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, maleic anhydride, and maleic acid half ester are mentioned. Among them, (meth)acrylic acid is particularly preferred.

第二單體係非酸性、且於分子中具有至少1個聚合性不飽和基之單體。例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸苄酯、乙烯醇之酯類、例如乙酸乙烯酯、(甲基)丙烯腈、苯乙烯、及能夠聚合之苯乙烯衍生物。其中特佳為(甲基)丙烯酸甲酯、(甲基)丙烯酸正丁酯、苯乙烯、(甲基)丙烯酸苄酯。The second single system is a monomer which is non-acidic and has at least one polymerizable unsaturated group in the molecule. For example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, (methyl) ) isobutyl acrylate, tert-butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, Benzyl (meth)acrylate, an ester of vinyl alcohol, such as vinyl acetate, (meth)acrylonitrile, styrene, and a styrene derivative capable of polymerization. Among them, methyl (meth)acrylate, n-butyl (meth)acrylate, styrene, and benzyl (meth)acrylate are particularly preferred.

再者,於本說明書中,所謂(甲基)丙烯醯基,係指丙烯醯基及/或甲基丙烯醯基。In the present specification, the term "(meth)acryl fluorenyl) means an acryl fluorenyl group and/or a methacryl fluorenyl group.

(a) 鹼溶性高分子於感光性樹脂組合物中之含有比例為20~80質量%之範圍,較佳為30~70質量%之範圍。就藉由曝光、顯影所形成之光阻圖案具有作為光阻之特性、例如蓋孔、蝕刻及各種鍍敷步驟中的充分耐性之觀點而言,上述含有比例為20質量%以上80質量%以下。(a) The content of the alkali-soluble polymer in the photosensitive resin composition is in the range of 20 to 80% by mass, preferably 30 to 70% by mass. The resist pattern formed by exposure and development has a characteristic as a photoresist, for example, a cap hole, etching, and sufficient resistance in various plating steps, and the content ratio is 20% by mass or more and 80% by mass or less. .

(b) 含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體(b) an ethylenically unsaturated addition polymerizable monomer containing at least one compound having an acrylonitrile group

本發明之感光性樹脂組合物中的(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體係具有1個以上乙烯性不飽和鍵之單體。藉由含有至少1種具有丙烯醯基之化合物,可賦予剛曝光後之對比度提高效果。作為具有丙烯醯基之化合物,可列舉:1,6-己二醇二丙烯酸酯、1,4-環己二醇二丙烯酸酯、聚丙二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、2-二(對羥基苯基)丙烷二丙烯酸酯、甘油三丙烯酸酯、三羥甲基丙烷三丙烯酸酯、聚氧丙基三羥甲基丙烷三丙烯酸酯、聚氧乙基三羥甲基丙烷三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、三羥甲基丙烷三縮水甘油醚三丙烯酸酯、雙酚A二縮水甘油醚二丙烯酸酯、β-羥基丙基-β'-(丙烯醯氧基)丙基鄰苯二甲酸酯、苯氧基聚乙二醇丙烯酸酯、壬基苯氧基聚乙二醇丙烯酸酯、壬基苯氧基聚烷二醇丙烯酸酯、聚丙二醇單丙烯酸酯、雙酚A之環氧烷加成物(例如於兩端各加成平均5莫耳之環氧乙烷而成的加成物、於兩端各加成平均2莫耳之環氧丙烷及於兩端各加成平均15莫耳之環氧乙烷而成的加成物)之二丙烯酸酯、三乙二醇十二丙二醇、於加成環氧丙烷而成之聚丙二醇上進而於兩端加成環氧乙烷(於加成平均12莫耳之環氧丙烷而成之聚丙二醇的兩端分別各加成平均3莫耳之環氧乙烷)而得之聚烷二醇之二丙烯酸酯。其中,較佳為季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、雙酚A二縮水甘油醚二丙烯酸酯、雙酚A之環氧烷加成物之二丙烯酸酯。In the photosensitive resin composition of the present invention, (b) an ethylenically unsaturated addition polymerizable single system containing at least one compound having an acrylonitrile group has one or more ethylenically unsaturated bonds. By containing at least one compound having an acrylonitrile group, the contrast-improving effect immediately after exposure can be imparted. Examples of the compound having an acrylonitrile group include 1,6-hexanediol diacrylate, 1,4-cyclohexanediol diacrylate, polypropylene glycol diacrylate, polyethylene glycol diacrylate, and 2- Di(p-hydroxyphenyl)propane diacrylate, glycerol triacrylate, trimethylolpropane triacrylate, polyoxypropyl trimethylolpropane triacrylate, polyoxyethyl trimethylolpropane triacrylate Ester, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, trimethylolpropane triglycidyl ether triacrylate, bisphenol A diglycidyl ether diacrylate, β-hydroxypropyl-β'-(propylene oxide Propyl phthalate, phenoxy polyethylene glycol acrylate, nonyl phenoxy polyethylene glycol acrylate, nonyl phenoxy polyalkylene glycol acrylate, polypropylene glycol monoacrylate An alkylene oxide adduct of bisphenol A (for example, an adduct obtained by adding an average of 5 moles of ethylene oxide at both ends, and an average of 2 moles of propylene oxide at both ends and An acrylate or triethylene compound obtained by adding an average of 15 moles of ethylene oxide at both ends Twelve propylene glycol, polypropylene glycol added to propylene oxide and further added ethylene oxide at both ends (addition of 12 mil propylene oxide to the two ends of the addition of polypropylene glycol An average of 3 moles of ethylene oxide) derived from a dialkyl diol diacrylate. Among them, preferred are pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, bisphenol A diglycidyl ether diacrylate, and diacrylate of bisphenol A alkylene oxide adduct.

特別是就平衡性良好地達成剛曝光後之對比度性、感度、解像度及殘膜率之觀點而言,最佳為具有丙烯醯基之化合物係下述通式(II)所示之化合物:In particular, from the viewpoint of achieving good contrast, sensitivity, resolution, and residual film ratio immediately after exposure, the compound having an acrylonitrile group is preferably a compound represented by the following formula (II):

[化5][Chemical 5]

{式中,R2 、R3 、R4 及R5 表示H,X及Y分別獨立表示碳數2~4之伸烷基,X及Y互不相同,p1 、p2 、p3 、p4 、p5 、p6 、p7 及p8 分別獨立為0或正整數,p1 、p2 、p3 、p4 、p5 、p6 、p7 及p8 之合計為0~20的整數}。Wherein R 2 , R 3 , R 4 and R 5 represent H, and X and Y each independently represent an alkylene group having 2 to 4 carbon atoms, and X and Y are different from each other, p 1 , p 2 , p 3 , p 4 , p 5 , p 6 , p 7 and p 8 are each independently 0 or a positive integer, and the total of p 1 , p 2 , p 3 , p 4 , p 5 , p 6 , p 7 and p 8 is 0~ An integer of 20}.

本發明之感光性樹脂組合物中之具有丙烯醯基之化合物的含有比例,較佳為1~45質量%,更佳為1~30質量%,進而較佳為5~20質量%。就於剛曝光後具有良好之對比度性之觀點而言,上述含有比例較佳為1質量%以上,更佳為5質量%以上。又,就抑制剝離時殘膜性降低之觀點而言,較佳為45質量%以下,更佳為30質量%以下。The content ratio of the compound having an acrylonitrile group in the photosensitive resin composition of the present invention is preferably from 1 to 45% by mass, more preferably from 1 to 30% by mass, even more preferably from 5 to 20% by mass. The content ratio is preferably 1% by mass or more, and more preferably 5% by mass or more, from the viewpoint of having good contrast properties immediately after exposure. Moreover, from the viewpoint of suppressing a decrease in residual film property at the time of peeling, it is preferably 45 mass% or less, and more preferably 30 mass% or less.

(b) 含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體,就解像度方面而言,較佳為含有選自由下述通式(III)所示之能夠光聚合之不飽和化合物中的至少1種:(b) The ethylenically unsaturated addition polymerizable monomer containing at least one compound having an acrylonitrile group preferably contains a photopolymerizable group selected from the following formula (III) in terms of resolution. At least one of the unsaturated compounds:

[化6][Chemical 6]

{式中,R6 及R7 分別獨立表示H或CH3 ,A表示C2 H4 ,B表示C3 H6 ,n1+n2為2~30之整數,n3+n4為0~30之整數,n1及n2分別獨立為1~29之整數,n3及n4分別獨立為0~30之整數,並且-(A-O)-及-(B-O)-之重複單元的排列既可為無規亦可為嵌段}。In the formula, R 6 and R 7 each independently represent H or CH 3 , A represents C 2 H 4 , B represents C 3 H 6 , n1+n2 is an integer of 2 to 30, and n3+n4 is an integer of 0 to 30. , n1 and n2 are independently integers from 1 to 29, n3 and n4 are each independently an integer from 0 to 30, and the arrangement of repeating units of -(AO)- and -(BO)- can be either random or Block}.

作為上述通式(III)所示之化合物,可列舉2,2-雙{(4-丙烯醯氧基聚伸乙基氧基)苯基}丙烷及2,2-雙{(4-甲基丙烯醯氧基聚伸乙基氧基)苯基}丙烷等。上述通式(III)所示之化合物所具有的聚伸乙基氧基較佳為選自由如下之基所組成之群中之任一基:單伸乙基氧基、二伸乙基氧基、三伸乙基氧基、四伸乙基氧基、五伸乙基氧基、六伸乙基氧基、七伸乙基氧基、八伸乙基氧基、九伸乙基氧基、十伸乙基氧基、十一伸乙基氧基、十二伸乙基氧基、十三伸乙基氧基、十四伸乙基氧基、及十五伸乙基氧基。Examples of the compound represented by the above formula (III) include 2,2-bis{(4-propenyloxypolyethyloxy)phenyl}propane and 2,2-bis{(4-methyl). Acryloxypolyethyloxy)phenyl}propane or the like. The polyethylidene group which the compound represented by the above formula (III) has is preferably one selected from the group consisting of a monoethyloxy group and a diethylidene group. , tri-ethyloxy, tetra-ethyloxy, penta-ethyloxy, hexaethyloxy, heptaethyloxy, octaethyloxy, hexaethyloxy, X-epiethyloxy, eleven-ethyloxy, dodecylethyloxy, thirteen-extended ethyloxy, tetradecylethyloxy, and pentadecylethyloxy.

又,作為上述通式(III)所示之化合物,亦可列舉2,2-雙{(4-丙烯醯氧基聚伸烷基氧基)苯基}丙烷及2,2-雙{(4-甲基丙烯醯氧基聚伸烷基氧基)苯基}丙烷等。作為上述通式(III)所示之化合物所具有的聚伸烷基氧基,可列舉伸乙基氧基與伸丙基氧基之混合物,較佳為八伸乙基氧基與二伸丙基氧基之嵌段結構之加成物或無規結構之加成物、及四伸乙基氧基與四伸丙基氧基之嵌段結構之加成物或無規結構之加成物、十五伸乙基氧基與二伸丙基氧基之嵌段結構之加成物或無規結構之加成物。該等之中,最佳為2,2-雙{(4-甲基丙烯醯氧基五伸乙基氧基)苯基}丙烷。Further, examples of the compound represented by the above formula (III) include 2,2-bis{(4-propenyloxypolyalkyloxy)phenyl}propane and 2,2-dual {(4). -Methyl propylene oxime-polyalkyloxy)phenyl}propane or the like. The polyalkyleneoxy group which the compound represented by the above formula (III) has may be exemplified by a mixture of an ethyloxy group and a propyloxy group, preferably an octaethyloxy group and a di-extension propyl group. An adduct of a block structure of a oxy group or an adduct of a random structure, and an adduct of a block structure of a tetraethyl ethoxy group and a tetrapropyl propyloxy group or an adduct of a random structure An adduct of a block structure of a penta-extension ethyloxy group and a di-propyloxy group or an adduct of a random structure. Among these, 2,2-bis{(4-methylpropenyloxypentaethyloxy)phenyl}propane is most preferred.

於(b)乙烯性不飽和加成聚合性單體含有上述通式(III)所示之化合物時,本發明之感光性樹脂組合物中的上述通式(III)所示之化合物之含有比例較佳為1~40質量%,更佳為5~30質量%。就於剛曝光後具有良好的對比度性之觀點而言,上述含有比例較佳為1質量%以上,又,就抑制解像性及密接性降低之觀點而言,較佳為40質量%以下。When the (b) ethylenically unsaturated addition polymerizable monomer contains the compound represented by the above formula (III), the content ratio of the compound represented by the above formula (III) in the photosensitive resin composition of the invention It is preferably from 1 to 40% by mass, more preferably from 5 to 30% by mass. The content of the above-mentioned content is preferably 1% by mass or more, and is preferably 40% by mass or less from the viewpoint of suppressing the resolution and the adhesion.

作為(b)乙烯性不飽和加成聚合性單體,可使用例如下述所示之能夠光聚合之不飽和化合物,與上述具有丙烯醯基之化合物及通式(III)所示之化合物組合,或替代上述具有丙烯醯基之化合物及通式(III)所示之化合物。即,可列舉:1,6-己二醇二甲基丙烯酸酯、1,4-環己二醇二甲基丙烯酸酯、聚丙二醇二甲基丙烯酸酯、聚乙二醇二甲基丙烯酸酯、2-二(對羥基苯基)丙烷二甲基丙烯酸酯、甘油三甲基丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、聚氧丙基三羥甲基丙烷三甲基丙烯酸酯、聚氧乙基三羥甲基丙烷三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇五甲基丙烯酸酯、三羥甲基丙烷三縮水甘油醚三甲基丙烯酸酯、雙酚A二縮水甘油醚二甲基丙烯酸酯、β-羥基丙基-β'-(甲基丙烯醯氧基)丙基鄰苯二甲酸酯、苯氧基聚乙二醇甲基丙烯酸酯、壬基苯氧基聚乙二醇甲基丙烯酸酯、壬基苯氧基聚烷二醇甲基丙烯酸酯、聚丙二醇單甲基丙烯酸酯、雙酚A之環氧烷加成物(例如於兩端各加成平均5莫耳之環氧乙烷而成之加成物、於兩端各加成平均2莫耳之環氧丙烷及於兩端各加成平均15莫耳之環氧乙烷而成之加成物)之二甲基丙烯酸酯、三乙二醇十二丙二醇、於加成環氧丙烷而成之聚丙二醇上進而於兩端加成環氧乙烷(於加成平均12莫耳之環氧丙烷而成之聚丙二醇之兩端分別各加成平均3莫耳之環氧乙烷)而得之聚烷二醇之二甲基丙烯酸酯。As the (b) ethylenically unsaturated addition polymerizable monomer, for example, a photopolymerizable unsaturated compound shown below can be used in combination with the above compound having an acrylonitrile group and a compound represented by the formula (III). Or in place of the above compound having an acrylonitrile group and a compound represented by the formula (III). That is, 1,6-hexanediol dimethacrylate, 1,4-cyclohexanediol dimethacrylate, polypropylene glycol dimethacrylate, polyethylene glycol dimethacrylate, 2-bis(p-hydroxyphenyl)propane dimethacrylate, glycerol trimethacrylate, trimethylolpropane trimethacrylate, polyoxypropyl trimethylolpropane trimethacrylate, poly Oxyethyl trimethylolpropane trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol pentamethyl acrylate, trimethylolpropane triglycidyl ether trimethacrylate, bisphenol A diglycidyl Ether dimethacrylate, β-hydroxypropyl-β'-(methacryloxy)propyl phthalate, phenoxy polyethylene glycol methacrylate, mercaptophenoxy Polyethylene glycol methacrylate, nonylphenoxy polyalkylene glycol methacrylate, polypropylene glycol monomethacrylate, bisphenol A alkylene oxide adduct (for example, average addition at both ends) Addition of 5 moles of ethylene oxide, adding 2 moles of propylene oxide at both ends and adding them to both ends 15 moles of ethylene oxide adduct) dimethacrylate, triethylene glycol dodecanol, on the addition of propylene oxide to polypropylene glycol and then add epoxy at both ends Ethane (dimethacrylate of polyalkylene glycol) obtained by adding an average of 3 moles of ethylene oxide to each end of the polypropylene glycol obtained by adding an average of 12 moles of propylene oxide.

又,作為(b)乙烯性不飽和加成聚合性單體,亦可列舉胺酯化合物。作為胺酯化合物,例如可列舉:六亞甲基二異氰酸酯、甲苯二異氰酸酯及二異氰酸酯化合物、例如2,2,4-三甲基六亞甲基二異氰酸酯與一分子中具有羥基及(甲基)丙烯醯基之化合物、例如丙烯酸2-羥基丙酯、低聚丙二醇單甲基丙烯酸酯之胺酯化合物。具體而言有六亞甲基二異氰酸酯與低聚丙二醇單甲基丙烯酸酯(日本油脂股份有限公司製造、Blemmer PP1000)之反應物。胺酯化合物既可單獨使用,亦可併用2種以上。Further, examples of the (b) ethylenically unsaturated addition polymerizable monomer include an amine ester compound. Examples of the amine ester compound include hexamethylene diisocyanate, toluene diisocyanate, and diisocyanate compounds, for example, 2,2,4-trimethylhexamethylene diisocyanate and a hydroxyl group and (methyl group) in one molecule. A compound of an acrylonitrile group, for example, an amine ester compound of 2-hydroxypropyl acrylate or oligomeric propylene glycol monomethacrylate. Specifically, there is a reaction product of hexamethylene diisocyanate and oligomeric polypropylene glycol monomethacrylate (manufactured by Nippon Oil & Fat Co., Ltd., Blemmer PP1000). The amine ester compound may be used singly or in combination of two or more.

本發明中所使用之(b)乙烯性不飽和加成聚合性單體於感光性樹脂組合物中之含有比例為5~60質量%之範圍,較佳為10~50質量%之範圍。就提高感度、解像度及密接性之觀點而言,上述含有比例為5質量%以上,就抑制邊緣熔融(edge fuse)之觀點而言,為60質量%以下。The content of the (b) ethylenically unsaturated addition polymerizable monomer used in the present invention in the photosensitive resin composition is in the range of 5 to 60% by mass, preferably 10 to 50% by mass. In view of the improvement of the sensitivity, the resolution, and the adhesion, the content ratio is 5% by mass or more, and is 60% by mass or less from the viewpoint of suppressing edge fuse.

(c) 光聚合起始劑(c) Photopolymerization initiator

本發明之感光性樹脂組合物中的(c)光聚合起始劑含有N-芳基-α-胺基酸化合物作為必需成分。藉由含有N-芳基-α-胺基酸化合物可確保良好之感度。其中,就感度方面而言,特佳為N-芳基-α-胺基酸化合物為N-苯基甘胺酸。The (c) photopolymerization initiator in the photosensitive resin composition of the present invention contains an N-aryl-α-amino acid compound as an essential component. Good sensitivity is ensured by the N-aryl-α-amino acid compound. Among them, in terms of sensitivity, a particularly preferred N-aryl-α-amino acid compound is N-phenylglycine.

作為本發明中所使用之(c)光聚合起始劑,較佳為併用N-芳基-α-胺基酸化合物與吖啶衍生物之系。作為吖啶衍生物,可列舉:9-苯基吖啶、9-吡啶基吖啶、9-吡基吖啶、1,2-雙(9-吖啶基)乙烷、1,3-雙(9-吖啶基)丙烷、1,4-雙(9-吖啶基)丁烷、1,5-雙(9-吖啶基)戊烷、1,6-雙(9-吖啶基)己烷、1,7-雙(9-吖啶基)庚烷(旭電化工業股份有限公司製造、N-1717)、1,8-雙(9-吖啶基)辛烷、1,9-雙(9-吖啶基)壬烷、1,10-雙(9-吖啶基)癸烷、1,11-雙(9-吖啶基)十一烷、1,12-雙(9-吖啶基)十二烷。As the (c) photopolymerization initiator used in the present invention, a combination of an N-aryl-α-amino acid compound and an acridine derivative is preferably used in combination. As the acridine derivative, 9-phenyl acridine, 9-pyridyl acridine, and 9-pyridyl are exemplified. Acridine, 1,2-bis(9-acridinyl)ethane, 1,3-bis(9-acridinyl)propane, 1,4-bis(9-acridinyl)butane, 1, 5-bis(9-acridinyl)pentane, 1,6-bis(9-acridinyl)hexane, 1,7-bis(9-acridinyl)heptane (manufactured by Asahi Kasei Kogyo Co., Ltd.) , N-1717), 1,8-bis(9-acridinyl)octane, 1,9-bis(9-acridinyl)decane, 1,10-bis(9-acridinyl)decane 1,11-bis(9-acridinyl)undecane, 1,12-bis(9-acridinyl)dodecane.

作為(c)光聚合起始劑,除上述所示之化合物以外,亦可併用其他光聚合起始劑。此處之光聚合起始劑係指藉由各種活性光線、例如紫外線等而活性化,開始聚合之化合物。As the (c) photopolymerization initiator, in addition to the above-mentioned compounds, other photopolymerization initiators may be used in combination. The photopolymerization initiator herein refers to a compound which is activated by various active light rays such as ultraviolet rays to initiate polymerization.

作為上述其他光聚合起始劑,可列舉:吡咯啉類、例如1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡咯啉,醌類、例如2-乙基蒽醌及2-第三丁基蒽醌,芳香族酮類、例如二苯甲酮及安息香,安息香醚類、例如安息香甲醚及安息香乙醚,吖啶化合物、例如9-苯基吖啶,苯偶醯縮酮類、例如苯偶醯二甲基縮酮及苯偶醯二乙基縮酮。As the other photopolymerization initiator, pyrroline, for example, 1-phenyl-3-(4-t-butyl-styryl)-5-(4-t-butyl-phenyl) can be mentioned. Pyrroline, anthraquinones such as 2-ethylhydrazine and 2-tert-butylfluorene, aromatic ketones such as benzophenone and benzoin, benzoin ethers such as benzoin methyl ether and benzoin ethyl ether, hydrazine Pyridine compounds, for example, 9-phenyl acridine, benzoin ketals, such as benzoin dimethyl ketal and benzoin diethyl ketal.

又,作為上述其他光聚合起始劑,亦可併用9-氧硫星類、例如9-氧硫、2,4-二乙基-9-氧硫或2-氯-9-氧硫與級胺化合物、例如二甲基胺基苯甲酸烷基酯化合物。Further, as the other photopolymerization initiator, 9-oxosulfuric acid may be used in combination. Star class, such as 9-oxosulfur 2,4-diethyl-9-oxosulfur Or 2-chloro-9-oxosulfur With a graded amine compound, for example an alkyl dimethylaminobenzoate compound.

又,作為上述其他光聚合起始劑,亦可列舉:肟酯類、例如1-苯基-1,2-丙二酮-2-O-苯甲醯基肟及1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟。Further, examples of the other photopolymerization initiator include oxime esters such as 1-phenyl-1,2-propanedione-2-O-benzimidoxime and 1-phenyl-1. 2-propanedione-2-(O-ethoxycarbonyl)indole.

(c) 光聚合起始劑於感光性樹脂組合物中之含有比例為0.1質量%~20質量%之範圍。若上述含有比例未達0.1質量%,則無法獲得充分之感度。又,若上述含有比例超過20質量%,則於曝光時容易產生由通過光罩之光的繞射所引起之灰霧,其結果解像性惡化。上述含有比例更佳為0.1~15質量%之範圍,進而較佳為0.1~10質量%之範圍。(c) The content ratio of the photopolymerization initiator in the photosensitive resin composition is in the range of 0.1% by mass to 20% by mass. If the above content ratio is less than 0.1% by mass, sufficient sensitivity cannot be obtained. In addition, when the content ratio exceeds 20% by mass, fogging due to diffraction of light passing through the mask is likely to occur during exposure, and as a result, the resolution is deteriorated. The content ratio is more preferably in the range of 0.1 to 15% by mass, still more preferably in the range of 0.1 to 10% by mass.

(d) 隱色染料(d) leuco dye

作為本發明之感光性樹脂組合物中之(d)隱色染料,可列舉隱色結晶紫、熒烷染料等。其中,於使用隱色結晶紫時,剛曝光後之對比度良好而較佳。作為熒烷染料,例如可列舉:3-二乙基胺基-6-甲基-7-苯胺基熒烷、3-二丁基胺基-6-甲基-7-苯胺基熒烷、2-(2-氯苯胺基)-6-二丁基胺基熒烷、2-溴-3-甲基-6-二丁基胺基熒烷、2-N,N-二苄基胺基-6-二乙基胺基熒烷、3-二乙基胺基-7-氯胺基熒烷、3,6-二甲氧基熒烷、3-二乙基胺基-6-甲氧基-7-胺基熒烷等。The (d) leuco dye in the photosensitive resin composition of the present invention may, for example, be a leuco crystal violet or a fluoran dye. Among them, when leuco crystal violet is used, the contrast immediately after exposure is good and preferable. Examples of the fluoran dye include 3-diethylamino-6-methyl-7-anilinofluoran, 3-dibutylamino-6-methyl-7-anilinofluoran, and 2 -(2-chloroanilino)-6-dibutylamino fluoran, 2-bromo-3-methyl-6-dibutylaminofluoran, 2-N,N-dibenzylamino- 6-Diethylaminofluoran, 3-diethylamino-7-chloroaminofluoran, 3,6-dimethoxyfluoran, 3-diethylamino-6-methoxy -7-Amino fluoran and the like.

(d) 隱色染料於感光性樹脂組合物中之含有比例為0.1~10質量%之範圍,較佳為0.1~5質量%之範圍,更佳為0.5~3質量%之範圍。就表現充分之剛曝光後之對比度的觀點而言,上述含有比例為0.1質量%以上,又,就維持保存穩定性之觀點而言,為10質量%以下。(d) The content of the leuco dye in the photosensitive resin composition is in the range of 0.1 to 10% by mass, preferably in the range of 0.1 to 5% by mass, and more preferably in the range of 0.5 to 3% by mass. The content ratio is 0.1% by mass or more, and is 10% by mass or less from the viewpoint of maintaining storage stability from the viewpoint of the contrast after the exposure.

(e) 巰基噻二唑化合物(e) mercaptothiadiazole compounds

本發明之感光性樹脂組合物中之(e)巰基噻二唑化合物係下述通式(I)所示之化合物:The (e) mercaptothiadiazole compound in the photosensitive resin composition of the present invention is a compound represented by the following formula (I):

[化7][Chemistry 7]

{式中,R1 表示選自由碳數1~9之烷基、碳數1~9之烷氧基、碳數1~16之烷硫基、巰基、胺基、及碳數1~9之烷基胺基所組成之群中之1種基}。In the formula, R 1 represents an alkyl group selected from a carbon number of 1 to 9, an alkoxy group having 1 to 9 carbon atoms, an alkylthio group having 1 to 16 carbon atoms, an anthracenyl group, an amine group, and a carbon number of 1 to 9. One of the groups consisting of alkylamino groups}.

作為(e)巰基噻二唑化合物,例如可列舉:5-甲基-2-巰基-1,3,4-噻二唑、5-乙基-2-巰基-1,3,4-噻二唑、5-正丙基-2-巰基-1,3,4-噻二唑、5-異丙基-2-巰基-1,3,4-噻二唑、5-甲氧基-2-巰基-1,3,4-噻二唑、5-乙氧基-2-巰基-1,3,4-噻二唑、5-正丙氧基-2-巰基-1,3,4-噻二唑、5-異丙氧基-2-巰基-1,3,4-噻二唑、5-甲硫基-2-巰基-1,3,4-噻二唑、5-乙硫基-2-巰基-1,3,4-噻二唑、5-正丙硫基-2-巰基-1,3,4-噻二唑、5-異丙硫基-2-巰基-1,3,4-噻二唑、2-胺基-5-巰基-1,3,4-噻二唑、5-甲基胺基-2-巰基-1,3,4-噻二唑、2,5-二巰基-1,3,4-噻二唑等。As the (e) mercaptothiadiazole compound, for example, 5-methyl-2-mercapto-1,3,4-thiadiazole, 5-ethyl-2-mercapto-1,3,4-thiadi Oxazole, 5-n-propyl-2-mercapto-1,3,4-thiadiazole, 5-isopropyl-2-mercapto-1,3,4-thiadiazole, 5-methoxy-2- Mercapto-1,3,4-thiadiazole, 5-ethoxy-2-mercapto-1,3,4-thiadiazole, 5-n-propoxy-2-indolyl-1,3,4-thiazide Diazole, 5-isopropoxy-2-mercapto-1,3,4-thiadiazole, 5-methylthio-2-mercapto-1,3,4-thiadiazole, 5-ethylthio- 2-mercapto-1,3,4-thiadiazole, 5-n-propylthio-2-mercapto-1,3,4-thiadiazole, 5-isopropylthio-2-mercapto-1,3, 4-thiadiazole, 2-amino-5-mercapto-1,3,4-thiadiazole, 5-methylamino-2-mercapto-1,3,4-thiadiazole, 2,5- Dimercapto-1,3,4-thiadiazole and the like.

特別是5-甲硫基-2-巰基-1,3,4-噻二唑、2-胺基-5-巰基-1,3,4-噻二唑、5-甲基胺基-2-巰基-1,3,4-噻二唑及2,5-二巰基-1,3,4-噻二唑困感度、密接性及剛曝光後之對比度性能較高而可較佳地使用。該等可單獨使用或將2種以上組合使用。In particular 5-methylthio-2-mercapto-1,3,4-thiadiazole, 2-amino-5-mercapto-1,3,4-thiadiazole, 5-methylamino-2- The mercapto-1,3,4-thiadiazole and 2,5-dimercapto-1,3,4-thiadiazole are preferably used because of their high sensitivity, adhesion, and contrast performance immediately after exposure. These may be used alone or in combination of two or more.

(e) 巰基噻二唑化合物於感光性樹脂組合物中之含有比例為0.01~5質量%之範圍,較佳為0.05~3質量%之範圍,最佳為0.1~2質量%之範圍。就獲得充分之感度及密接性、以及對比度之觀點而言,上述含有比例為0.01質量%以上,又,就維持保存穩定性之觀點而言,為5質量%以下。再者由於(e)巰基噻二唑化合物於常溫下為粉體,因此上述含有比例典型的是固體成分比例。(e) The content of the mercaptothiadiazole compound in the photosensitive resin composition is in the range of 0.01 to 5% by mass, preferably 0.05 to 3% by mass, and most preferably 0.1 to 2% by mass. The content ratio is 0.01% by mass or more, and the storage stability is 5% by mass or less from the viewpoint of obtaining sufficient sensitivity, adhesion, and contrast. Further, since the (e) mercaptothiadiazole compound is a powder at normal temperature, the above content ratio is typically a solid content ratio.

於本發明中,較佳為於感光性樹脂組合物中含有鹵化物。於此情形下,藉由將(d)隱色染料與鹵化物組合使用,可使密接性及剛曝光後之對比度更加良好。In the present invention, it is preferred to contain a halide in the photosensitive resin composition. In this case, by using (d) a leuco dye in combination with a halide, the adhesion and the contrast immediately after exposure can be made better.

作為鹵化物,例如可列舉:溴戊烷、溴異戊烷、溴異丁烷、1,2-二溴乙烷、溴二苯基甲烷、二溴甲苯、二溴甲烷、三溴甲基苯基碸、四溴化碳、磷酸三(2,3-二溴丙基)酯、三氯乙醯胺、碘戊烷、碘異丁烷、1,1,1-三氯-2,2-雙(對氯苯基)乙烷、六氯乙烷、鹵化三化合物等。Examples of the halide include bromopentane, bromoisopentane, bromoisobutane, 1,2-dibromoethane, bromodiphenylmethane, dibromotoluene, dibromomethane, and tribromomethylphenyl. Bismuth, carbon tetrabromide, tris(2,3-dibromopropyl) phosphate, trichloroacetamide, iodopentane, iodoisobutane, 1,1,1-trichloro-2,2-double (p-chlorophenyl)ethane, hexachloroethane, halogenated three Compounds, etc.

於本發明中使用鹵化物時,感光性樹脂組合物中之鹵化物之含量較佳為0.01~5質量%,更佳為0.05~3質量%。When a halide is used in the present invention, the content of the halide in the photosensitive resin composition is preferably from 0.01 to 5% by mass, more preferably from 0.05 to 3% by mass.

於本發明中,為提高感光性樹脂組合物之操作性,除上述(d)隱色染料外,亦可使感光性樹脂組合物中含有著色物質。作為著色物質,例如可列舉:品紅(fuchsin)、酞菁綠(phthalocyanine green)、金黃胺鹼(auramine base)、對品紅(paramagenta)、結晶紫(crystal violet)、甲基橙、尼羅藍(Nile blue)-2B、維多利亞藍(Victoria blue)、孔雀綠(malachite green)(例如保土谷化學(Hodogaya Chemical)股份有限公司製造之AIZEN(註冊商標)MALACHITE GREEN)、鹼性藍(basic blue)-20、鑽石綠(diamond green)(例如保土谷化學股份有限公司製造之AIZEN(註冊商標)DIAMOND GREEN GH)等。In the present invention, in order to improve the handleability of the photosensitive resin composition, in addition to the above (d) leuco dye, the photosensitive resin composition may contain a coloring matter. Examples of the coloring matter include fuchsin, phthalocyanine green, auramine base, paramagenta, crystal violet, methyl orange, and Nile. Nile blue-2B, Victoria blue, malachite green (eg AIZEN (registered trademark) MALACHITE GREEN by Hodogaya Chemical Co., Ltd.), basic blue (basic blue) -20, diamond green (for example, AIZEN (registered trademark) DIAMOND GREEN GH manufactured by Hodogaya Chemical Co., Ltd.).

於使用上述著色物質時,感光性樹脂組合物中之著色物質之含有比例較佳為0.001~1質量%,更佳為0.01~0.1質量%。於上述含有比例為0.001質量%以上時,操作性提高之效果良好,於為1質量%以下時,維持保存穩定性之效果良好。When the coloring matter is used, the content of the coloring matter in the photosensitive resin composition is preferably 0.001 to 1% by mass, more preferably 0.01 to 0.1% by mass. When the content ratio is 0.001% by mass or more, the effect of improving workability is good, and when it is 1% by mass or less, the effect of maintaining storage stability is good.

又,為提高本發明中之感光性樹脂組合物之熱穩定性及保存穩定性,亦可使感光性樹脂組合物中含有穩定劑。作為穩定劑,例如可列舉:對甲氧基苯酚、對苯二酚、鄰苯三酚、萘胺、第三丁基鄰苯二酚、氯化亞銅、2,6-二-第三丁基-對甲酚、2,2'-亞甲基雙(4-乙基-6-第三丁基苯酚)、2,2'-亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基二苯胺等。又,亦可列舉:苯并三唑、羧基苯并三唑、1-(2-二烷基胺基)羧基苯并三唑、季戊四醇-3,5-二-第三丁基-4-羥基苯基丙酸四酯等。Moreover, in order to improve the thermal stability and storage stability of the photosensitive resin composition in the present invention, a stabilizer may be contained in the photosensitive resin composition. Examples of the stabilizer include p-methoxyphenol, hydroquinone, pyrogallol, naphthylamine, t-butyl catechol, cuprous chloride, and 2,6-di-third. Base-p-cresol, 2,2'-methylenebis(4-ethyl-6-tert-butylphenol), 2,2'-methylenebis(4-methyl-6-third Phenol), N-nitrosodiphenylamine, and the like. Further, benzotriazole, carboxybenzotriazole, 1-(2-dialkylamino)carboxybenzotriazole, pentaerythritol-3,5-di-t-butyl-4-hydroxyl Phenylpropionate tetraester and the like.

於使用上述穩定劑時,感光性樹脂組合物中之穩定劑之含有比例較佳為0.01~3質量%,更佳為0.05~1質量%。上述含有比例為0.01質量%以上時,對感光性樹脂組合物賦予保存穩定性之效果良好,於為3質量%以下時,維持感度之效果良好。When the stabilizer is used, the content of the stabilizer in the photosensitive resin composition is preferably from 0.01 to 3% by mass, more preferably from 0.05 to 1% by mass. When the content ratio is 0.01% by mass or more, the effect of imparting storage stability to the photosensitive resin composition is good, and when it is 3% by mass or less, the effect of maintaining sensitivity is good.

進而於本發明之感光性樹脂組合物中,視需要亦可含有塑化劑。作為塑化劑,可列舉:鄰苯二甲酸酯類例如鄰苯二甲酸二乙酯、鄰甲苯磺醯胺、對甲苯磺醯胺、檸檬酸三丁酯、檸檬酸三乙酯、乙醯基檸檬酸三乙酯、乙醯基檸檬酸三正丙酯、乙醯基檸檬酸三正丁酯、聚丙二醇、聚乙二醇、聚乙二醇烷基醚、聚丙二醇烷基醚等。於含有上述塑化劑時,感光性樹脂組合物中之塑化劑之含有比例較佳為5~50質量%,更佳為5~30質量%。於上述含有比例為50質量%以下時,抑制顯影時間之延遲並對硬化膜賦予柔軟性之效果良好,於為5質量%以上時,抑制硬化不足或冷流(cold flow)之效果良好。Furthermore, the photosensitive resin composition of this invention may contain a plasticizer as needed. Examples of the plasticizer include phthalic acid esters such as diethyl phthalate, o-toluenesulfonamide, p-toluenesulfonamide, tributyl citrate, triethyl citrate, and ethyl hydrazine. Triethyl citrate, tri-n-propyl ethyl citrate, tri-n-butyl acetyl citrate, polypropylene glycol, polyethylene glycol, polyethylene glycol alkyl ether, polypropylene glycol alkyl ether, and the like. When the plasticizer is contained, the content of the plasticizer in the photosensitive resin composition is preferably from 5 to 50% by mass, more preferably from 5 to 30% by mass. When the content ratio is 50% by mass or less, the effect of suppressing the delay of the development time and imparting flexibility to the cured film is good, and when it is 5% by mass or more, the effect of suppressing insufficient hardening or cold flow is good.

<感光性樹脂積層體><Photosensitive Resin Laminate>

本發明亦提供一種於包含基材膜之支持體上積層包含上述本發明之感光性樹脂組合物之感光性樹脂層而成的感光性樹脂積層體。本發明之感光性樹脂積層體具有感光性樹脂層、及支持該感光性樹脂層之包含基材膜的支持體,視需要亦可於感光性樹脂層之與支持體相對側之表面具有保護層。The present invention also provides a photosensitive resin laminate in which a photosensitive resin layer containing the photosensitive resin composition of the present invention is laminated on a support comprising a substrate film. The photosensitive resin laminate of the present invention has a photosensitive resin layer and a support comprising a base film which supports the photosensitive resin layer, and may have a protective layer on the surface of the photosensitive resin layer opposite to the support, if necessary. .

作為基材膜,較理想的是使自曝光光源射出之光透過的透明基材膜。作為此種基材膜,例如可列舉:聚對苯二甲酸乙二酯膜、聚乙烯醇膜、聚氯乙烯膜、氯乙烯共聚物膜、聚偏二氯乙烯膜、偏二氯乙烯共聚物膜、聚甲基丙烯酸甲酯共聚物膜、聚苯乙烯膜、聚丙烯腈膜、苯乙烯共聚物膜、聚醯胺膜、纖維素衍生物膜等。該等膜視需要亦可使用經延伸者。基材膜之霧度較佳為5以下。雖然膜之厚度較薄者於圖像形成性及經濟性方面有利,但由於需要維持強度,因此較佳為10~30 μm。As the base film, a transparent base film that transmits light emitted from the exposure light source is preferable. Examples of such a substrate film include a polyethylene terephthalate film, a polyvinyl alcohol film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyvinylidene chloride film, and a vinylidene chloride copolymer. A film, a polymethyl methacrylate copolymer film, a polystyrene film, a polyacrylonitrile film, a styrene copolymer film, a polyamide film, a cellulose derivative film, or the like. These films may also be used as extensions as needed. The haze of the base film is preferably 5 or less. Although the thickness of the film is thin, it is advantageous in terms of image formation property and economic efficiency, but it is preferably 10 to 30 μm because it is required to maintain strength.

又,關於在感光性樹脂積層體中視需要而使用之保護層的重要特性,與支持體相比保護層與感光性樹脂層之密接力足夠小,可容易地剝離。例如聚乙烯膜及聚丙烯膜可較好地用作保護層。又,例如可使用日本專利特開昭59-202457號公報中揭示之剝離性優異之膜。保護層之膜厚較佳為10~100 μm,更佳為10~50 μm。Moreover, the important characteristic of the protective layer used as needed in the photosensitive resin laminated body is that the adhesive force of the protective layer and the photosensitive resin layer is sufficiently smaller than the support, and can be easily peeled off. For example, a polyethylene film and a polypropylene film can be preferably used as the protective layer. Further, for example, a film excellent in peelability disclosed in Japanese Laid-Open Patent Publication No. SHO 59-202457 can be used. The film thickness of the protective layer is preferably from 10 to 100 μm, more preferably from 10 to 50 μm.

本發明之感光性樹脂積層體中之感光性樹脂層的厚度根據用途而不同,較佳為5~100 μm,更佳為7~60 μm,越薄則解像度越提高,又,越厚則膜強度越提高。The thickness of the photosensitive resin layer in the photosensitive resin laminate of the present invention varies depending on the application, and is preferably 5 to 100 μm, more preferably 7 to 60 μm. The thinner the resolution is, the thicker the film is. The strength is increased.

作為依序積層支持體、感光性樹脂層、及視需要之保護層而製作本發明之感光性樹脂積層體的方法,可採用先前已知之方法。例如使感光性樹脂層中所使用之感光性樹脂組合物與溶解其之溶劑混合而製成均勻之溶液,首先使用棒塗機或輥塗機於支持體上塗佈該溶液並進行乾燥,而於支持體上積層包含感光性樹脂組合物之感光性樹脂層。繼而,視需要於感光性樹脂層上貼合保護層,藉此可製作感光性樹脂積層體。As a method of producing the photosensitive resin laminate of the present invention as a sequential buildup support, a photosensitive resin layer, and an optional protective layer, a previously known method can be employed. For example, a photosensitive resin composition used in a photosensitive resin layer is mixed with a solvent dissolved therein to prepare a uniform solution, and the solution is first applied onto a support by a bar coater or a roll coater and dried. A photosensitive resin layer containing a photosensitive resin composition is laminated on a support. Then, a protective layer is bonded to the photosensitive resin layer as needed, whereby a photosensitive resin laminate can be produced.

作為上述溶劑,可列舉:以甲基乙基酮(MEK)為代表之酮類,及以甲醇、乙醇及異丙醇為代表之醇類。以塗佈於支持體上之感光性樹脂組合物之溶液的黏度於25℃下成為500~4000 mPa‧s之方式,於感光性樹脂組合物中添加溶劑。Examples of the solvent include ketones represented by methyl ethyl ketone (MEK), and alcohols represented by methanol, ethanol, and isopropyl alcohol. The solvent is added to the photosensitive resin composition so that the viscosity of the solution of the photosensitive resin composition coated on the support is 500 to 4000 mPa·s at 25°C.

<光阻圖案之形成方法><Method of Forming Photoresist Pattern>

上述本發明之感光性樹脂組合物及感光性樹脂積層體可用於形成負型光阻圖案。本發明亦提供一種光阻圖案之形成方法,其包括以下步驟:積層步驟,將上述本發明之感光性樹脂積層體積層於基板上;曝光步驟,對感光性樹脂積層體中之感光性樹脂層進行曝光;及顯影步驟,將感光性樹脂層之未曝光部分顯影去除。以下表示具體方法之一例。The photosensitive resin composition and the photosensitive resin laminate of the present invention described above can be used to form a negative photoresist pattern. The present invention also provides a method for forming a photoresist pattern, comprising the steps of: laminating a layer of the photosensitive resin layer of the present invention on a substrate; and exposing the photosensitive resin layer in the photosensitive resin laminate The exposure is performed; and the developing step is performed to remove the unexposed portion of the photosensitive resin layer. An example of a specific method is shown below.

作為基板,於以製造印刷線路板為目的時,可列舉銅箔積層板,又,於以製造凹凸基材為目的時,可列舉:塗佈有玻璃肋漿料之玻璃基板、例如電漿顯示面板用基板、表面電解顯示器基板、有機EL密封蓋用基板、形成有貫通孔之矽晶圓及陶瓷基板。所謂電漿顯示器用基板,係於玻璃上形成電極後,塗佈介電體層,繼而塗佈隔離壁用玻璃漿料,並對隔離壁用玻璃漿料部分實施噴砂加工而形成隔離壁之基板。對該等基板實施噴砂步驟而成者成為凹凸基材。In the case of manufacturing a printed wiring board, a copper foil laminated board is used as a substrate, and a glass substrate coated with a glass rib slurry, for example, a plasma display, is used for the purpose of producing a textured base material. A panel substrate, a surface electrolytic display substrate, an organic EL sealing cover substrate, a tantalum wafer in which a through hole is formed, and a ceramic substrate. In the substrate for a plasma display, after forming an electrode on a glass, a dielectric layer is applied, and then a glass paste for a partition wall is applied, and a glass paste portion for a partition wall is subjected to sandblasting to form a substrate of a partition wall. The blasting step is performed on the substrates to form an uneven substrate.

[積層步驟][Lamination step]

於積層步驟中,使用例如貼合機等將感光性樹脂積層體積層於基板上。於感光性樹脂積層體具有保護層時,將保護層剝離後,藉由貼合機將感光性樹脂層加熱壓接於基板表面而積層。此時,感光性樹脂層可僅積層於基板表面之單面上,亦可積層於兩面。此時之加熱溫度通常為40~160℃。又,藉由進行2次以上該加熱壓接可提高密接性及耐化學藥品性。此時,壓接可使用具備二聯輥之二段式貼合機,亦可使感光性樹脂積層體與基板反覆幾次通過輥進行壓接。In the lamination step, a photosensitive resin layer is laminated on the substrate using, for example, a laminator. When the photosensitive resin laminate has a protective layer, the protective layer is peeled off, and then the photosensitive resin layer is heated and pressure-bonded to the surface of the substrate by a bonding machine to be laminated. At this time, the photosensitive resin layer may be laminated only on one surface of the substrate surface, or may be laminated on both surfaces. The heating temperature at this time is usually 40 to 160 °C. Moreover, the adhesion and chemical resistance can be improved by performing the thermocompression bonding twice or more. In this case, a two-stage laminator having a double roll can be used for the pressure bonding, and the photosensitive resin laminate can be pressure-bonded by a roller several times over the substrate.

[曝光步驟][Exposure step]

繼而,於曝光步驟中,使用曝光機對感光性樹脂積層體中之感光性樹脂層進行曝光。若有必要則於曝光前將支持體剝離,通過光罩藉由活性光進行曝光。曝光量藉由光源照度及曝光時間而決定,可使用光量計進行測定。又,曝光步驟亦可藉由刻寫圖案之直接刻寫而進行。直接刻寫曝光方法係不使用光罩而於基板上直接刻寫並曝光之方法。作為光源,例如可使用波長為350~410 nm之半導體雷射或超高壓水銀燈。刻寫圖案藉由計算機來控制,此時之曝光量藉由光源照度及基板之移動速度而決定。Then, in the exposure step, the photosensitive resin layer in the photosensitive resin laminate is exposed using an exposure machine. If necessary, the support is peeled off before exposure, and exposure is performed by active light through a photomask. The amount of exposure is determined by the illumination of the light source and the exposure time, and can be measured using a light meter. Moreover, the exposing step can also be performed by direct writing of the writing pattern. The direct writing exposure method is a method of directly writing and exposing on a substrate without using a photomask. As the light source, for example, a semiconductor laser or an ultrahigh pressure mercury lamp having a wavelength of 350 to 410 nm can be used. The writing pattern is controlled by a computer, and the exposure amount at this time is determined by the illumination of the light source and the moving speed of the substrate.

[顯影步驟][Development Step]

於顯影步驟中,使用顯影裝置將感光性樹脂層之未曝光部分顯影去除。曝光後,於感光性樹脂層上具有支持體時,視需要將其去除,繼而使用鹼性水溶液之顯影液將未曝光部分顯影去除,而獲得光阻圖案。作為鹼性水溶液,例如可使用Na2 CO3 或K2 CO3 之水溶液。該等可根據感光性樹脂層之特性而進行選擇,通常為濃度0.2~2質量%、溫度20~40℃之Na2 CO3 水溶液。該鹼性水溶液中亦可混入表面活性劑、消泡劑、用以促進顯影之少量有機溶劑等。In the developing step, the unexposed portion of the photosensitive resin layer is developed and removed using a developing device. After the exposure, when the support is provided on the photosensitive resin layer, it is removed as needed, and then the unexposed portion is developed and removed using a developing solution of an alkaline aqueous solution to obtain a photoresist pattern. As the alkaline aqueous solution, for example, an aqueous solution of Na 2 CO 3 or K 2 CO 3 can be used. These may be selected according to the characteristics of the photosensitive resin layer, and are usually a Na 2 CO 3 aqueous solution having a concentration of 0.2 to 2% by mass and a temperature of 20 to 40 °C. A surfactant, an antifoaming agent, a small amount of an organic solvent for promoting development, and the like may be mixed in the alkaline aqueous solution.

雖然可藉由上述步驟而獲得光阻圖案,但根據情況亦可進一步進行100~300℃之加熱步驟。藉由實施該加熱步驟,可進一步提高耐化學藥品性。加熱可使用熱風、紅外線或遠紅外線之方式的加熱爐。Although the photoresist pattern can be obtained by the above steps, a heating step of 100 to 300 ° C can be further performed depending on the case. By performing this heating step, chemical resistance can be further improved. A heating furnace in the form of hot air, infrared rays or far infrared rays can be used for heating.

<導體圖案之製造方法及印刷線路板之製造方法><Method for Producing Conductor Pattern and Method for Manufacturing Printed Wiring Board>

本發明可較好地應用於導體圖案之製造方法及印刷線路板之製造方法。例如使用銅箔積層板或可撓性基板作為基板,藉由繼上述光阻圖案之形成方法後經由以下步驟,可製造導體圖案及印刷線路板。The present invention can be preferably applied to a method of manufacturing a conductor pattern and a method of manufacturing a printed wiring board. For example, a copper foil laminate or a flexible substrate is used as the substrate, and the conductor pattern and the printed wiring board can be manufactured by the following steps following the method of forming the photoresist pattern.

首先,利用先前公知之方法,對藉由上述本發明之光阻形成方法中的顯影而露出之基板之銅面進行蝕刻或鍍敷,而形成導體圖案。First, a copper conductor of a substrate exposed by development in the above-described photoresist forming method of the present invention is etched or plated by a conventionally known method to form a conductor pattern.

其後,藉由具有強於顯影液之鹼性之水溶液將光阻圖案自基板剝離而獲得所需之印刷線路板。剝離用鹼性水溶液(以下亦稱為「剝離液」)並無特別限制,通常使用濃度為2~5質量%、溫度為40~70℃之NaOH或KOH之水溶液。剝離液中亦可添加少量水溶性溶劑。Thereafter, the desired printed wiring board is obtained by peeling the photoresist pattern from the substrate with an aqueous solution having a stronger alkalinity than the developer. The alkaline aqueous solution for peeling (hereinafter also referred to as "peeling liquid") is not particularly limited, and an aqueous solution of NaOH or KOH having a concentration of 2 to 5% by mass and a temperature of 40 to 70 ° C is usually used. A small amount of a water-soluble solvent may also be added to the stripping solution.

<導線架之製造方法><Method of manufacturing lead frame>

本發明亦可較好地應用於導線架之製造方法。具體而言,使用金屬板、例如銅、銅合金或鐵系合金之板作為基板,繼上述光阻圖案之形成方法後經由以下步驟,而製造導線架。The present invention can also be preferably applied to a method of manufacturing a lead frame. Specifically, a metal plate, for example, a plate of copper, a copper alloy, or an iron-based alloy is used as a substrate, and after the method of forming the photoresist pattern, the lead frame is manufactured through the following steps.

首先,對藉由光阻圖案之形成方法中之顯影而露出之基板進行蝕刻而形成導體圖案。其後,以與上述印刷線路板之製造方法相同之方法剝離光阻圖案,而獲得所需之導線架。First, a substrate which is exposed by development in a method of forming a photoresist pattern is etched to form a conductor pattern. Thereafter, the photoresist pattern is peeled off in the same manner as in the above-described method of manufacturing a printed wiring board to obtain a desired lead frame.

<半導體封裝體之製造方法><Method of Manufacturing Semiconductor Package>

本發明亦可較好地應用於半導體封裝體之製造方法。具體而言,使用作為LSI(large scale integrated circuit,大型積體電路)之電路形成完畢之晶圓作為基板,繼上述光阻圖案之形成方法後經由以下步驟,藉此可製造半導體封裝體。The present invention can also be preferably applied to a method of manufacturing a semiconductor package. Specifically, a wafer formed as a circuit of an LSI (large scale integrated circuit) is used as a substrate, and after the method of forming the photoresist pattern, the semiconductor package can be manufactured through the following steps.

首先,對藉由光阻圖案之形成方法中之顯影而露出之開口部實施例如銅或焊錫之柱狀鍍敷,形成導體圖案。其後,以與上述印刷線路板之製造方法相同之方法剝離光阻圖案,進而藉由蝕刻而去除柱狀鍍敷以外之部分的較薄之金屬層,藉此獲得所需之半導體封裝體。First, a columnar plating such as copper or solder is applied to an opening exposed by development in a photoresist pattern forming method to form a conductor pattern. Thereafter, the photoresist pattern is removed in the same manner as in the above-described method of manufacturing a printed wiring board, and a thin metal layer other than the columnar plating is removed by etching, whereby a desired semiconductor package is obtained.

<具有凹凸圖案之基材之製造方法><Method of Manufacturing Substrate Having Concavo-Concave Pattern>

本發明亦可較好地應用於具有凹凸圖案之基材之製造方法。在使用本發明之感光性樹脂積層體作為乾膜光阻藉由噴砂工法對基板實施加工時,使用塗佈有玻璃肋漿料之玻璃基板作為基板,以與上述方法相同之方法於基板上積層感光性樹脂積層體,並實施曝光及顯影。The present invention is also preferably applied to a method of producing a substrate having a concavo-convex pattern. When the substrate is processed by the blasting method using the photosensitive resin laminate of the present invention as a dry film resist, a glass substrate coated with a glass rib slurry is used as a substrate, and a layer is laminated on the substrate in the same manner as the above method. The photosensitive resin laminate is subjected to exposure and development.

進而,經由自所形成之光阻圖案上吹附噴擊材料而切削至目標深度的噴砂處理步驟、利用鹼性剝離液將殘存於基材上之樹脂部分自基材去除之剝離步驟,可於基材上加工微細之凹凸圖案。作為上述噴砂處理步驟中所使用之噴擊材料,可使用公知者,例如可使用以SiO、SiO2 、Al2 O3 、CaCO3 、ZrO、玻璃或不鏽鋼為材質之粒徑為2~100 μm左右之微粒子。Further, a blasting step of cutting the target material by blowing the blast material from the formed photoresist pattern, and a peeling step of removing the resin portion remaining on the substrate from the substrate by the alkaline stripping solution may be performed. A fine concavo-convex pattern is processed on the substrate. As the blasting material used in the blasting step, a known material can be used. For example, a particle size of 2 to 100 μm made of SiO, SiO 2 , Al 2 O 3 , CaCO 3 , ZrO, glass or stainless steel can be used. Left and right particles.

[實施例][Examples]

以下,藉由實施例對本發明之實施形態之例進行詳細說明。Hereinafter, examples of embodiments of the present invention will be described in detail by way of examples.

1. 評價用樣品之製作1. Production of samples for evaluation

實施例及比較例中之感光性樹脂積層體藉由如下方式製作。The photosensitive resin laminates of the examples and the comparative examples were produced as follows.

<感光性樹脂積層體之製作><Production of Photosensitive Resin Laminate>

準備表1所示之化合物,將表2及3所示之組成比例之感光性樹脂組合物充分地攪拌、混合,並使用棒塗機均勻地塗佈於作為支持體的19 μm厚之聚對苯二甲酸乙二酯膜之表面,於95℃之乾燥機中乾燥3分鐘而形成感光性樹脂層。感光性樹脂層之厚度為30 μm。繼而,於感光性樹脂層之未積層聚對苯二甲酸乙二酯膜之表面上,貼合23 μm厚之聚乙烯膜作為保護層,而獲得感光性樹脂積層體。再者,表1中,「P」對應於(a)鹼溶性高分子,「M-1」及「M-2」對應於(b)乙烯性不飽和加成聚合性單體中之能夠光聚合之不飽和化合物,「M-3」對應於(b)乙烯性不飽和加成聚合性單體中之具有丙烯醯基之化合物,「I-1」對應於(c)光聚合起始劑中之吖啶衍生物,「I-2」對應於(c)光聚合起始劑中之N-芳基-α-胺基酸化合物,「I-3」、「I-4」及「I-5」對應於(e)巰基噻二唑化合物,「D-1」對應於(d)隱色染料。又,表2及3中之P之質量份係包含甲基乙基酮之值。The compound shown in Table 1 was prepared, and the photosensitive resin composition of the composition ratio shown in Tables 2 and 3 was sufficiently stirred and mixed, and uniformly applied to a 19 μm-thick pair as a support by a bar coater. The surface of the ethylene phthalate film was dried in a dryer at 95 ° C for 3 minutes to form a photosensitive resin layer. The thickness of the photosensitive resin layer was 30 μm. Then, a polyethylene film having a thickness of 23 μm was bonded to the surface of the uncovered polyethylene terephthalate film of the photosensitive resin layer as a protective layer to obtain a photosensitive resin laminate. In addition, in Table 1, "P" corresponds to (a) an alkali-soluble polymer, and "M-1" and "M-2" correspond to (b) an optically unsaturated addition polymerizable monomer. The polymerized unsaturated compound, "M-3" corresponds to (b) a compound having an acrylonitrile group in the ethylenically unsaturated addition polymerizable monomer, and "I-1" corresponds to (c) a photopolymerization initiator In the acridine derivative, "I-2" corresponds to (c) the N-aryl-α-amino acid compound in the photopolymerization initiator, "I-3", "I-4" and "I" -5" corresponds to (e) a mercaptothiadiazole compound, and "D-1" corresponds to (d) a leuco dye. Further, the mass parts of P in Tables 2 and 3 contain the value of methyl ethyl ketone.

<銅箔積層板之整面><The whole surface of the copper foil laminate>

使用積層有35 μm壓延銅箔之0.4 mm厚之銅箔積層板,藉由噴射洗滌器(jet scrubber)(石井表記股份有限公司製造)對表面進行研磨。The surface was ground by a jet scrubber (manufactured by Ishii Kee Co., Ltd.) using a 0.4 mm thick copper foil laminate laminated with a 35 μm rolled copper foil.

<積層><layer>

一面將感光性樹脂積層體之聚乙烯膜剝離,一面於作為預熱至60℃之基板的銅箔積層板上藉由加熱輥貼合機(旭化成股份有限公司公司製造、AL-70)於輥溫度105℃下積層感光性樹脂積層體。將氣壓設為0.35 MPa,將積層速度設為1.5 m/min。The polyethylene film of the photosensitive resin laminate was peeled off on a copper foil laminate which was preheated to 60 ° C by a heating roll laminator (manufactured by Asahi Kasei Co., Ltd., AL-70). A photosensitive resin laminate was laminated at a temperature of 105 °C. The gas pressure was set to 0.35 MPa, and the stacking speed was set to 1.5 m/min.

<曝光:直接刻寫方法><Exposure: Direct writing method>

藉由直接刻寫式曝光裝置(日立比亞機械(Hitachi Via Mechanics)股份有限公司製造、DI曝光機DE-1AH、光源:GaN藍紫二極體、主波長407±3 nm),以20 mJ/cm2 之曝光量,對積層於銅箔積層板上之感光性樹脂積層體進行曝光。Directly engraved exposure device (manufactured by Hitachi Via Mechanics Co., Ltd., DI exposure machine DE-1AH, light source: GaN blue-violet diode, dominant wavelength 407±3 nm), at 20 mJ/ The amount of exposure of cm 2 was exposed to a photosensitive resin laminate laminated on a copper foil laminate.

<顯影><development>

將聚對苯二甲酸乙二酯膜剝離後,使用鹼性顯影機(FUJI KIKO製造、乾膜用顯影機),將30℃之1質量% Na2 CO3 水溶液噴霧特定時間,以最小顯影時間之2倍時間溶解去除感光性樹脂層之未曝光部分。此時,將未曝光部分之感光性樹脂層完全溶解所需要之最少時間作為最小顯影時間。After peeling off the polyethylene terephthalate film, an alkali developing machine (manufactured by FUJI KIKO, a dry film developing machine) was used to spray a 1% by mass Na 2 CO 3 aqueous solution at 30 ° C for a specific time to minimize the development time. The unexposed portion of the photosensitive resin layer was dissolved and removed twice. At this time, the minimum time required to completely dissolve the photosensitive resin layer of the unexposed portion is taken as the minimum development time.

2. 評價方法2. Evaluation method (1) 剛曝光後之對比度評價法(1) Contrast evaluation method after exposure

將感光性樹脂層曝光後分別30秒後及1分鐘後,藉由測色色差計(日本電色股份有限公司製造之Σ80),對未曝光部分與曝光部分之感光性樹脂層測定色差ΔE。曝光後30秒後及1分鐘後之對比度分別如下分級。After the exposure of the photosensitive resin layer for 30 seconds and 1 minute, the color difference ΔE was measured for the photosensitive resin layer of the unexposed portion and the exposed portion by a colorimetric color difference meter (Σ80 manufactured by Nippon Denshoku Co., Ltd.). The contrasts after 30 seconds and after 1 minute after exposure were respectively classified as follows.

AAA:ΔE為2.5以上AAA: ΔE is 2.5 or more

AA:ΔE為1以上且未達2.5AA: ΔE is 1 or more and less than 2.5

B:ΔE未達1B: ΔE is less than 1

(2) 解像度之評價方法(2) Evaluation method of resolution

藉由直接曝光而刻寫曝光部分與未曝光部之寬度為1:1之比率的線圖案,並進行顯影。將硬化光阻線未缺失或剝離而正常形成之最小寬度作為解像度之值。解像度如下分級。A line pattern in which the width of the exposed portion and the unexposed portion is 1:1 is written by direct exposure, and development is performed. The minimum width normally formed by the hardened photoresist line not missing or peeled off is taken as the value of the resolution. The resolution is graded as follows.

AA:35 μm以下AA: 35 μm or less

A:超過35 μmA: More than 35 μm

(3) 感度之評價方法(3) Evaluation method of sensitivity

使用明度分21階段自透明變化成黑色之Stouffer製造之21格階段式曝光表進行曝光並顯影。根據顯影後光阻膜完全殘存之階段式曝光表格數,如下分級。Exposure and development were carried out using a 21-stage stage exposure meter manufactured by Stouffer, which was changed from transparent to black, using a brightness stage of 21 stages. According to the number of staged exposure tables in which the photoresist film completely remains after development, it is classified as follows.

AA:光阻膜完全殘存之階段式曝光表格數為5格以上AA: The number of stage exposure tables in which the photoresist film completely remains is 5 or more

A:光阻膜完全殘存之階段式曝光表格數未達5格A: The number of stage exposure tables in which the photoresist film completely remains is less than 5

(4) 殘膜率之評價方法(4) Evaluation method of residual film rate

自聚對苯二甲酸乙二酯膜側對感光性樹脂積層體進行曝光,自曝光後之感光性樹脂積層體剝離聚對苯二甲酸乙二酯膜及聚乙烯膜,並測定硬化膜之質量,然後於50℃之3質量% NaOH溶液中攪拌3小時。繼而將NaOH溶液過濾,使殘存於濾紙上之硬化膜乾燥並測定質量。將殘存之硬化膜之質量相對於攪拌前之硬化膜之質量之比例作為殘膜率。The photosensitive resin laminate is exposed from the polyethylene terephthalate film side, and the polyethylene terephthalate film and the polyethylene film are peeled off from the exposed photosensitive resin laminate, and the quality of the cured film is measured. Then, it was stirred for 3 hours in a 3 mass% NaOH solution at 50 °C. The NaOH solution was then filtered to dry the cured film remaining on the filter paper and the mass was measured. The ratio of the mass of the remaining cured film to the mass of the cured film before stirring was taken as the residual film ratio.

AA:殘膜率為25%以上AA: residual film rate is 25% or more

A:殘膜率未達25%A: The residual film rate is less than 25%.

3. 評價結果3. Evaluation results

將實施例及比較例之評價結果示於表2及3。The evaluation results of the examples and comparative examples are shown in Tables 2 and 3.

[產業上之可利用性][Industrial availability]

本發明可較好地用於例如印刷線路板之製造、IC晶片搭載用導線架之製造、以金屬掩模製造為代表之金屬箔精密加工、以BGA及CSP為代表之封裝體之製造、以COF及TAB為代表之捲帶基板之製造、半導體凸塊之製造、以ITO電極、定址電極及電磁波遮罩為代表之平板顯示器的隔離壁之製造、以及具有利用噴砂工法所產生之凹凸圖案的基材之製造。The present invention can be preferably used, for example, in the manufacture of a printed wiring board, the manufacture of a lead frame for mounting an IC chip, the precision processing of a metal foil represented by a metal mask manufacturing, and the manufacture of a package represented by BGA and CSP. COF and TAB are representative of the manufacture of the tape substrate, the manufacture of the semiconductor bump, the manufacture of the partition wall of the flat panel display represented by the ITO electrode, the address electrode and the electromagnetic wave mask, and the concave and convex pattern generated by the sand blasting method. Fabrication of substrates.

Claims (8)

一種感光性樹脂組合物,其包含:(a)含有羧酸、酸當量為100~600、重量平均分子量為5,000~500,000之鹼溶性高分子:20~80質量%;(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體:5~60質量%;(c)含有N-芳基-α-胺基酸化合物與吖啶衍生物之光聚合起始劑:0.1~20質量%;(d)隱色染料:0.1~10質量%;及(e)下述通式(I)所示之巰基噻二唑化合物:0.01~5質量%: {式中,R1 表示選自由碳數1~9之烷基、碳數1~9之烷氧基、碳數1~16之烷硫基、巰基、胺基及碳數1~9之烷基胺基所組成之群中之1種基},其中含有5質量%~45質量%之上述具有丙烯醯基之化合物。A photosensitive resin composition comprising: (a) an alkali-soluble polymer containing a carboxylic acid, an acid equivalent of 100 to 600, a weight average molecular weight of 5,000 to 500,000: 20 to 80% by mass; (b) at least one kind Ethylene unsaturated addition polymerizable monomer having a propylene fluorenyl group: 5 to 60% by mass; (c) photopolymerization initiator containing an N-aryl-α-amino acid compound and an acridine derivative : 0.1 to 20% by mass; (d) leuco dye: 0.1 to 10% by mass; and (e) a mercaptothiadiazole compound represented by the following formula (I): 0.01 to 5% by mass: In the formula, R 1 represents an alkyl group selected from the group consisting of an alkyl group having 1 to 9 carbon atoms, an alkoxy group having 1 to 9 carbon atoms, an alkylthio group having 1 to 16 carbon atoms, an anthracenyl group, an amine group, and an alkyl group having 1 to 9 carbon atoms. One of the groups consisting of a group of amino groups, wherein the compound having an acryloyl group is contained in an amount of from 5% by mass to 45% by mass. 如請求項1之感光性樹脂組合物,其中上述(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體中之具有丙烯醯基的化合物係下述通式(II)所示之化合物: {式中,R2 、R3 、R4 及R5 表示H,X及Y分別獨立表示碳數2~4之伸烷基,X及Y互不相同,p1 、p2 、p3 、p4 、p5 、p6 、p7 及p8 分別獨立為0或正整數,p1 、p2 、p3 、p4 、p5 、p6 、p7 及p8 之合計為0~20的整數}。The photosensitive resin composition of claim 1, wherein the (b) ethylenically unsaturated addition polymerizable monomer having at least one compound having an acrylonitrile group has a propylene fluorenyl group as a general formula Compounds shown in (II): Wherein R 2 , R 3 , R 4 and R 5 represent H, and X and Y each independently represent an alkylene group having 2 to 4 carbon atoms, and X and Y are different from each other, p 1 , p 2 , p 3 , p 4 , p 5 , p 6 , p 7 and p 8 are each independently 0 or a positive integer, and the total of p 1 , p 2 , p 3 , p 4 , p 5 , p 6 , p 7 and p 8 is 0~ An integer of 20}. 如請求項1或2之感光性樹脂組合物,其中上述(e)巰基噻二唑化合物為選自由5-甲硫基-2-巰基-1,3,4-噻二唑、2-胺基-5-巰基-1,3,4-噻二唑、5-甲基胺基-2-巰基-1,3,4-噻二唑及2,5-二巰基-1,3,4-噻二唑所組成之群中之至少1種化合物。 The photosensitive resin composition of claim 1 or 2, wherein the (e) mercaptothiadiazole compound is selected from the group consisting of 5-methylthio-2-mercapto-1,3,4-thiadiazole, 2-amino group -5-mercapto-1,3,4-thiadiazole, 5-methylamino-2-mercapto-1,3,4-thiadiazole and 2,5-dimercapto-1,3,4-thiazide At least one compound of the group consisting of oxazoles. 如請求項1或2之感光性樹脂組合物,其中上述(c)光聚合起始劑所含有之上述N-芳基-α-胺基酸化合物為N-苯基甘胺酸。 The photosensitive resin composition of claim 1 or 2, wherein the above-mentioned N-aryl-α-amino acid compound contained in the above (c) photopolymerization initiator is N-phenylglycine. 如請求項1或2之感光性樹脂組合物,其中上述(b)含有至少1種具有丙烯醯基之化合物的乙烯性不飽和加成聚合性單體包含選自由下述通式(III)所示之可光聚合之不飽和化合物中的至少1種: {式中,R6 及R7 分別獨立表示H或CH3 ,A表示C2 H4 ,B表示C3 H6 ,n1+n2為2~30之整數,n3+n4為0~30之整數,n1及n2分別獨立為1~29之整數,n3及n4分別獨立為0~30之整數,並且-(A-O)-及-(B-O)-之重複單元的排列既可為無規亦可為嵌段}。The photosensitive resin composition of claim 1 or 2, wherein the (b) ethylenically unsaturated addition polymerizable monomer containing at least one compound having an acrylonitrile group is selected from the group consisting of the following formula (III) At least one of the photopolymerizable unsaturated compounds is shown: In the formula, R 6 and R 7 each independently represent H or CH 3 , A represents C 2 H 4 , B represents C 3 H 6 , n1+n2 is an integer of 2 to 30, and n3+n4 is an integer of 0 to 30. , n1 and n2 are independently integers from 1 to 29, n3 and n4 are each independently an integer from 0 to 30, and the arrangement of repeating units of -(AO)- and -(BO)- can be either random or Block}. 一種感光性樹脂積層體,其係於包含基材膜之支持體上積層包含如請求項1或2之感光性樹脂組合物之感光性樹脂層而成。 A photosensitive resin laminate which is obtained by laminating a photosensitive resin layer containing the photosensitive resin composition of claim 1 or 2 on a support comprising a base film. 一種光阻圖案之形成方法,其包括如下步驟:積層步驟,將如請求項6之感光性樹脂積層體積層於基板上;曝光步驟,對感光性樹脂積層體中之感光性樹脂層進行曝光;及顯影步驟,將感光性樹脂層之未曝光部分顯影去除。 A method for forming a photoresist pattern, comprising the steps of: laminating a layer of a photosensitive resin layer as claimed in claim 6 on a substrate; and exposing the photosensitive resin layer in the photosensitive resin laminate; And a developing step of developing and removing the unexposed portion of the photosensitive resin layer. 如請求項7之光阻圖案之形成方法,其中藉由描繪圖案之直接描繪而進行上述曝光步驟。 A method of forming a photoresist pattern according to claim 7, wherein the exposing step is performed by direct drawing of the drawing pattern.
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JP5775494B2 (en) * 2012-02-28 2015-09-09 富士フイルム株式会社 Silver ion diffusion suppression layer forming composition, silver ion diffusion suppression layer film, wiring board, electronic device, conductive film laminate, and touch panel
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006259112A (en) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd Photosensitive composition, and photosensitive lithographic printing plate and image recording method using the same
CN101290471A (en) * 2007-04-17 2008-10-22 旭化成电子材料元件株式会社 Photoresist combination and laminating body

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61172139A (en) * 1985-01-25 1986-08-02 Fuji Photo Film Co Ltd Photopolymerizable composition
JPS6221141A (en) * 1985-07-22 1987-01-29 Fuji Photo Film Co Ltd Photopolymerizable composition
JP2596089B2 (en) * 1988-09-21 1997-04-02 日立化成工業株式会社 Photosensitive resin composition and photosensitive resin composition laminate
JPH02294302A (en) * 1989-05-08 1990-12-05 Hitachi Chem Co Ltd Photosensitive resin composition and photosensitive element using the same
JP2505637B2 (en) * 1990-09-28 1996-06-12 日立化成工業株式会社 Photopolymerizable composition and photopolymerizable element
JP2006251385A (en) * 2005-03-10 2006-09-21 Fuji Photo Film Co Ltd Pattern forming material, pattern forming apparatus and pattern forming method
KR101313538B1 (en) * 2006-04-06 2013-10-01 주식회사 동진쎄미켐 Negative photosensitive resin composition
JP5388331B2 (en) * 2006-09-29 2014-01-15 旭化成イーマテリアルズ株式会社 Polyorganosiloxane composition
JP5057861B2 (en) * 2007-06-27 2012-10-24 旭化成イーマテリアルズ株式会社 Photosensitive resin composition and laminate thereof
JP2009128419A (en) * 2007-11-20 2009-06-11 Asahi Kasei Electronics Co Ltd Photosensitive resin composition and laminate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006259112A (en) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd Photosensitive composition, and photosensitive lithographic printing plate and image recording method using the same
CN101290471A (en) * 2007-04-17 2008-10-22 旭化成电子材料元件株式会社 Photoresist combination and laminating body

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