TWI489343B - Input device - Google Patents

Description

Input device

The present invention relates to an input device for detecting an operation position of an operation surface, and more particularly to a configuration of a bridge wire for connecting between transparent electrodes formed on a front surface of a transparent substrate.

Patent Document 1 discloses an input device in which a bridge wire electrically connecting a plurality of transparent electrodes is formed of ITO (Indium Tin Oxides) (in U.S. Patent 1, the intersection portion and the middle portion are described). Following the electrode).

Further, Patent Document 2 discloses an input device in which a bridge wire electrically connecting a plurality of transparent electrodes is formed of Mo, Al, Au or the like.

Further, an insulating layer is interposed between the transparent substrate constituting the surface on which the transparent electrode is formed and the bridge wiring. That is, the bridge wiring is electrically connected to each other through the front surface of the insulating layer.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-310550

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-271796

In Patent Document 1, the bridge wiring is formed of ITO, and there is a problem that the wiring resistance of the bridge wiring becomes large.

Further, as in Patent Document 2, the bridge wiring is formed of a metal material, whereby the wiring resistance of the bridge wiring can be made lower than the wiring resistance of the bridge wiring formed of ITO, but it is necessary to ensure good invisible characteristics, that is, it cannot be observed. In order to bridge the wiring, it is necessary to ensure good adhesion to the insulating layer constituting the formation surface of the bridge wiring. In addition to this, it is necessary to improve the environmental resistance (moisture resistance or heat resistance) of the bridge wiring.

In particular, in the case of using a metal having a low electrical resistance which is inferior in adhesion to the insulating layer, it is necessary to ensure good adhesion together with good invisible characteristics.

As shown in the experiment to be described later, the inventors of the present invention have selected, for example, Au as a low-resistance metal. However, Patent Document 1 and Patent Document 2 do not disclose that when Au is used as the bridge wiring, in particular, it is ensured that it is not visible. The characteristics are combined with the construction of good adhesion to the insulating layer.

Accordingly, the present invention has been made to solve the above problems, and it is an object of the invention to provide a particularly good invisible property and good adhesion to a transparent substrate side, and to improve the environmental resistance of the bridge wiring. Sexual input device.

The input device of the present invention has a transparent substrate, a plurality of transparent electrodes formed on the first surface of the transparent substrate, a bridge wire electrically connecting the transparent electrodes, and an insulating layer And being formed between the transparent substrate and the bridge wire; and the bridge wire has a base layer including ITO in contact with a front surface of the insulating layer, and a metal layer formed on a front surface of the base layer.

Thereby, good invisible characteristics can be ensured, and the low resistance of the bridge wiring can be achieved, and the adhesion between the bridge wiring and the insulating layer can be made good. Further, the underlayer layer containing ITO functions as a barrier layer for moisture due to water absorption of the insulating layer. Further, the underlying layer containing ITO can be appropriately followed for the shrinkage of the insulating layer accompanying environmental changes. In this way, it is also possible to ensure good environmental resistance (moisture resistance, heat resistance).

Preferably, in the invention, the metal layer is Au, an Au alloy, CuNi, or Ni. Among them, it is more preferable that the metal layer is formed of Au. Thereby, good invisible characteristics can be ensured, and low resistance can be achieved.

Further, in the invention, it is preferable that the conductive oxide protective layer is formed on the front surface of the metal layer. Thus, the metal oxide layer is not exposed to the front surface of the bridge wiring, and the conductive oxide protective layer covers the front surface of the metal layer, whereby the conductive oxide protective layer can be used as a barrier to moisture flowing in from the front side of the self-bridged wiring. The layer functions to more effectively improve the environmental resistance of the bridge wiring. Moreover, the invisible characteristics can be further improved.

Further, preferably, in the present invention, the conductive oxide protective layer contains ITO. The conductive oxide protective layer is formed of ITO, whereby the low resistance and electrostatic breakdown resistance of the bridge wiring can be improved.

Furthermore, in the present invention, the transparent electrode may include a plurality of first transparent electrodes and a plurality of second transparent electrodes, and each of the first transparent electrodes may be connected in the first direction to be in the first transparent electrode. The insulating layer is formed at the connection position, and each of the second transparent electrodes is connected in a second direction crossing the first direction by the bridge wiring formed on the insulating front surface of the insulating layer.

Further, in the present invention, it is preferable to use a structure in which an insulating layer constituting the insulating front surface is formed of a phenol resin.

Further, in the present invention, it is preferable to employ a configuration in which an optically transparent adhesive layer as a bonding material between the transparent substrates is contacted on the front surface of the bridge wiring. Further, it is preferable to employ a configuration in which the first surface side of the transparent substrate and the front surface are the panels of the operation surface are joined by the optically transparent adhesive layer.

According to the input device of the present invention, good invisible characteristics can be ensured, and low resistance can be realized, and the adhesion between the bridge wiring and the insulating layer can be made good. Further, the underlayer layer containing ITO is used as a barrier layer for moisture generated by the water absorption of the insulating layer. Wave function. Further, the underlying layer containing ITO can be appropriately followed for the shrinkage of the insulating layer accompanying environmental changes. In this way, it is also possible to ensure good environmental resistance (moisture resistance, heat resistance).

1‧‧‧Input device

2‧‧‧Transparent substrate

2a‧‧‧Front of transparent substrate 2

2b‧‧‧Back of transparent substrate 2

3‧‧‧ panel

3a‧‧‧Operation surface

4‧‧‧1st transparent electrode

5‧‧‧2nd transparent electrode

5a‧‧‧ front of the second transparent electrode 5

6‧‧‧Wiring Department

7‧‧‧Connecting Department

8‧‧‧1st electrode

10‧‧‧Bridge wiring

11‧‧‧Display area

12‧‧‧2nd electrode

20‧‧‧Insulation

20a‧‧‧Front of insulating layer 20

25‧‧‧Decorative area

26‧‧‧Transparent substrate

27‧‧‧External connection

28‧‧‧Optical Clear Adhesive Layer (OCA)

30‧‧‧Optical Clear Adhesive Layer (OCA)

35‧‧‧ basal layer

36‧‧‧metal layer

37‧‧‧ Conductive oxide protective layer

F‧‧‧ finger

X1-X2‧‧‧ direction

Y1-Y2‧‧ Direction

Fig. 1 is a plan view showing respective transparent electrodes and wiring portions formed on the front surface of a transparent substrate constituting the input device (touch panel) of the present embodiment.

2(a) is an enlarged plan view of the input device shown in FIG. 1, and FIG. 2(b) is a partially enlarged longitudinal cross-sectional view of the input device as viewed from the direction of the arrow taken along line AA of FIG. 2(a), FIG. (c) is a partially enlarged longitudinal sectional view of an input device different from that of Fig. 2(b).

Fig. 3 (a) is an enlarged longitudinal sectional view of the bridge wire of the first embodiment, and Fig. 3 (b) is an enlarged longitudinal sectional view of the bridge wire of the second embodiment.

4(a) to 4(d) are diagrams showing the steps of the method of manufacturing the input device of the present embodiment, and the left side view of Fig. 4 is a partial longitudinal sectional view, and the right side view of Fig. 4 is a plan view.

1 is a plan view showing respective transparent electrodes and wiring portions formed on the front surface of a transparent substrate constituting the input device (touch panel) of the present embodiment, and FIG. 2(a) is an enlarged view of the input device shown in FIG. 1. Fig. 2(b) is a partially enlarged longitudinal sectional view of the input device as viewed from the direction of the arrow along line AA of Fig. 2(a), and Fig. 2(c) is a part of the input device different from Fig. 2(b) Partially enlarged longitudinal section view.

In the present specification, the term "transparent" and "transparent" means a state in which the visible light transmittance is 50% or more (preferably 80% or more). Further, the haze value is preferably 6 or less.

Further, in FIG. 1, each of the transparent electrodes 4 and 5 and the wiring portion 6 formed on the front surface (first surface) 2a of the transparent substrate 2 constituting the input device 1 is shown, but actually, as shown in FIG. 2 (b) In the same manner, on the front side of the transparent substrate 2, a transparent panel 3 is provided, and in the position of the wiring portion 6, Since the decorative layer is formed, the wiring portion 6 cannot be observed from the front side of the panel 3. Further, since the transparent electrode was transparent, it could not be visually confirmed, but in Fig. 1, the shape of the transparent electrode was shown.

The transparent substrate 2 is formed of a film-form transparent substrate such as polyethylene terephthalate (PET) or a glass substrate. Further, each of the transparent electrodes 4 and 5 is formed by sputtering or vapor deposition using a transparent conductive material such as ITO (Indium Tin Oxide).

As shown in FIG. 1, a plurality of first transparent electrodes 4 and a plurality of second transparent electrodes 5 are formed in the display region 11 (which can be operated by an operation body such as a finger or a display screen facing the display).

As shown in Fig. 1 and Fig. 2(a), a plurality of first transparent electrodes 4 are formed on the front surface 2a of the transparent substrate 2, and each of the first transparent electrodes 4 is in the Y1-Y2 direction via the elongated connecting portion 7 ( The first direction) is connected. Further, the first electrodes 8 including the plurality of first transparent electrodes 4 connected in the Y1-Y2 direction are arranged at intervals in the X1-X2 direction.

Further, as shown in FIGS. 1 and 2(a), a plurality of second transparent electrodes 5 are formed on the front surface 2a of the transparent substrate 2. In this manner, the second transparent electrode 5 is formed on the same surface as the first transparent electrode 4 (front surface 2a of the transparent substrate 2). As shown in FIG. 1 and FIG. 2( a ), each of the second transparent electrodes 5 is connected to the X1-X2 direction (second direction) via the elongated bridge wires 10 . Further, the second electrodes 12 including the plurality of second transparent electrodes 5 connected in the X1-X2 direction are arranged at intervals in the Y1-Y2 direction.

As shown in FIGS. 2(a) and 2(b), an insulating layer 20 is formed on the front surface of the connecting portion 7 that connects the first transparent electrodes 4. As shown in FIG. 2(b), the insulating layer 20 fills the space between the connecting portion 7 and the second transparent electrode 5, and also slightly covers the front surface of the second transparent electrode 5.

Further, as shown in FIGS. 2(a) and 2(b), the bridge wiring 10 is formed from the front surface 20a of the insulating layer 20 and the front surface of each of the second transparent electrodes 5 located on both sides in the X1-X2 direction of the insulating layer 20. . The bridge wiring 10 electrically connects the second transparent electrodes 5 to each other.

As shown in Fig. 2 (a) and (b), the front side of the connecting portion 7 connecting the first transparent electrodes 4 is provided. The insulating layer 20 is provided, and a bridge wire 10 connecting the second transparent electrodes 5 is provided on the front surface of the insulating layer 20. As described above, the edge layer 20 is isolated between the connection portion 7 and the bridge wiring 10, and the first transparent electrode 4 and the second transparent electrode 5 are electrically insulated. Further, in the present embodiment, the first transparent electrode 4 and the second transparent electrode 5 can be formed on the same surface (the front surface 2a of the transparent substrate 2), whereby the thickness of the input device 1 can be reduced.

Further, the connection portion 7, the insulating layer 20, and the bridge wiring 10 are all located in the display region 11, and are configured to be transparent and light-transmitting similarly to the transparent electrodes 4 and 5.

As shown in FIG. 1, the periphery of the display area 11 is a frame-shaped decorative area (non-display area) 25. The display region 11 is transparent and translucent, but the decorative region 25 is opaque and non-translucent. Thereby, the wiring portion 6 or the external connection portion 27 provided in the decorative region 25 cannot be observed from the front surface of the input device 1 (the front surface of the panel 3).

As shown in FIG. 1, in the decorative region 25, a plurality of wiring portions 6 drawn from the respective first electrodes 8 and the respective second electrodes 12 are formed. Each of the wiring portions 6 is formed of a metal material such as Cu, a Cu alloy, a CuNi alloy, or Ni, Ag, or Au.

As shown in FIG. 1, the front end of each wiring portion 6 constitutes an external connection portion 27 that is electrically connected to a flexible printed circuit board (not shown).

As shown in FIG. 2(b), the front surface 2a side of the transparent substrate 2 and the panel 3 are joined via an optical transparent adhesive layer (OCA) 30. The panel 3 is not particularly limited in material, but a glass substrate or a plastic substrate is preferably used. The optical transparent adhesive layer (OCA) 30 is an acrylic adhesive or a double-sided adhesive tape.

In the capacitive input device 1 shown in FIG. 1, when it comes into contact with the operation surface 3a of the panel 3 as shown in FIG. 2(b), between the finger F and the first transparent electrode 4 close to the finger F. An electrostatic capacitance is generated between the second transparent electrode 5 and the second transparent electrode 5 . Based on the change in electrostatic capacitance at this time, the contact position of the finger F can be calculated. The position of the finger F is detected based on the change in electrostatic capacitance with the first electrode 8, and the X coordinate is detected based on the change in electrostatic capacitance with the second electrode 12 (self-capacitance detection type). Further, it may be a mutual capacitance detection type as follows: to the first electrode 8 A driving voltage is applied to one of the first electrodes of the second electrode 12, and a change in electrostatic capacitance between the finger F and the finger F is detected by the other second electrode, and the Y position is detected by the second electrode. 1 electrode detects the X position.

In the present embodiment, a characteristic portion exists in the structure of the bridge wiring 10 that connects the second transparent electrodes 5 to each other.

As shown in FIG. 3(a), the bridge wiring 10 of the first embodiment is a two-layer structure including a transparent base layer 35 made of ITO and a metal layer 36 having a lower resistance and a transparent base layer 35 than the base layer 35. The 35-layer is formed from the front surface 20a of the insulating layer 20 and the front surface 5a of the second transparent electrode 5, and the metal layer 36 is formed on the front surface of the base layer 35.

The metal layer 36 is preferably formed of any of Au, Au alloy, CuNi, and Ni. Among them, especially when Au is chosen, it is better. The reason for choosing Au is that it is a material that is heat-resistant, moisture-resistant, does not oxidize in environmental tests, and has a small change in resistance, and can maintain low resistance.

According to the configuration of the present embodiment, good invisible characteristics can be ensured, and the adhesion between the bridge wiring 10 and the insulating layer 20 can be improved. Further, the underlying layer 35 containing ITO also functions as a barrier layer for moisture generated by the water absorbing property of the insulating layer 20. Further, the underlying layer 35 containing ITO can increase the electrostatic breakdown voltage value (withstand voltage value), thereby improving electrostatic breakdown resistance. In the present embodiment, a phenol resin (resist) can be used for the insulating layer 20, and a gap between the second transparent electrode 5 and the connecting portion 7 can be appropriately filled. Further, the front surface 20a of the insulating layer 20 can be smoothly formed, so that the unevenness can be made small. The ITO-containing underlayer 35 of the present embodiment functions as a barrier layer for moisture generated by the water absorbing property of the phenol resin, and can appropriately follow the shrinkage of the insulating layer 20 which changes with respect to the environment. Thus, it is also possible to obtain good environmental resistance (moisture resistance, heat resistance) by a laminated structure including the underlying layer 35 of ITO and the metal layer 36.

Further, the electrostatic breakdown voltage value (withstand voltage value) can be increased by the laminated structure of the underlying layer 35 including the ITO and the metal layer 36, whereby the electrostatic breakdown resistance can be improved.

Here, the maximum thickness of the insulating layer 20 is about 0.5 to 4 μm, the thickness of the underlying layer 35 is about 5 to 40 nm, and the thickness of the metal layer 36 is about 2 to 20 nm. Further, the width dimension (length dimension in the Y1-Y2 direction) of the bridge wiring is about 5 to 50 μm, and the length dimension (length dimension in the X1-X2 direction) is about 150 to 500 μm.

In the present embodiment, even if the metal layer 36 having Au or the like having a specific resistance lower than that of ITO is formed thinner and thinner, the bridge layer may be formed by a single layer film of ITO. In the present embodiment, the bridge wiring 10 has a low resistance, and in the present embodiment, the thickness of the metal layer 36 is formed thin, and the width dimension is formed small, whereby the invisible characteristics can be improved.

Further, by using the underlayer 35 containing ITO and using ITO in each of the transparent electrodes 4 and 5, good electrical bonding can be ensured together with good adhesion.

Further, as shown in FIG. 3(b), the bridge wiring 10 of the second embodiment includes a transparent underlying layer 35 of ITO, a metal layer 36 which is lower in resistance and more transparent than the underlying layer 35, and a transparent layer containing ITO. The three-layer structure of the protective layer 37 is formed from the front surface 20a of the insulating layer 20 and the front surface 5a of the second transparent electrode 5, and the metal layer 36 is formed on the front surface of the base layer 35. The protective layer 37 It is formed on the front side of the metal layer 36. The conductive oxide protective layer 37 containing ITO has a film thickness of about 5 to 40 nm.

As shown in FIG. 3(b), the front surface of the metal layer 36 is covered with a conductive oxide protective layer 37 containing ITO, whereby the conductive oxide protective layer 37 can be used as the acrylic acid shown in FIG. 3(b). It functions as a barrier layer of moisture generated by the water absorbing property of the optically transparent adhesive layer (OCA) 30 formed of an adhesive or the like. Further, it is preferable to use ITO having high transparency in the conductive oxide protective layer 37. Thereby, the low resistance and electrostatic breakdown resistance of the bridge wiring can be improved. Further, in addition to this, ZnO or In ₂ O ₃ may be used as the conductive oxide protective layer. Further, by covering the front surface of the metal layer 36 with the conductive oxide protective layer 37 containing ITO, the reflectance of the bridge wiring 10 can be suppressed, and as a result, the transmittance/reflectance ratio can be increased, and the efficiency can be further effectively improved. Invisible feature.

Further, in the second embodiment shown in FIG. 3(b), the underlying layer 35 containing ITO is applied under the metal layer 36, whereby the adhesion between the bridge wiring 10 and the insulating layer 20 can be improved. Further, the under layer 35 can function as a barrier layer for moisture generated by the water absorbing property of the insulating layer 20. Thereby, as shown in FIG. 3(b), the base layer 35 containing ITO and the conductive oxide protective layer 37 are provided on the front and back surfaces of the metal layer 36, whereby the environmental resistance can be more effectively improved.

Further, the underlying layer 35 containing ITO can increase the electrostatic breakdown voltage value (withstand voltage value), thereby improving electrostatic breakdown resistance. Further, ITO is used for the underlying layer 35 containing ITO and each of the transparent electrodes 4 and 5, whereby good electrical bonding can be ensured together with good adhesion.

In addition, when the two-layer structure of FIG. 3(a) is used, the front surface of the metal layer 36 is in contact with the optically transparent adhesive layer (OCA) 30. However, even if it is a two-layer structure, the experiment will be described below. As a result, it is also possible to obtain an environmental resistance which can be used as the input device 1.

Further, in the present embodiment, as shown in FIG. 2(b), the transparent electrodes 4, 5, the insulating layer 20, and the bridge wiring 10 are provided on the front surface 2a facing the panel 3 side of the transparent substrate 2. However, as shown in FIG. 2(c), the transparent electrodes 4 and 5, the insulating layer 20, and the bridge wiring 10 may be provided on the back surface 2b (first surface) side of the transparent substrate 2. In FIG. 2(c), an optically transparent adhesive layer (OCA) 28 which is a bonding material between the back surface 2b of the transparent substrate 2 and the other transparent substrate 26 is in contact with the bridge wiring 10.

Moreover, the connection portion 7 that connects the first transparent electrodes 4 can be formed of ITO. In other words, each of the first transparent electrodes 4 and the connecting portion can be integrally formed.

Further, amorphous ITO can be used for the ITO constituting the underlying layer 35 of the bridge wiring 10 or the conductive oxide protective layer 37. However, the underlayer 35 or the conductive oxide protective layer 37 may be formed of crystalline ITO.

4(a) to 4(d) are diagrams showing the steps of the manufacturing method of the input device 1 of the present embodiment. The left diagram of Fig. 4 is a partial longitudinal sectional view, and the right drawing is a plan view. Furthermore, the left and right image sizes are different. Figure 4 is a partial longitudinal sectional view and a partial longitudinal sectional view shown in Figure 2 (b) Similarly, the person is cut in the X1-X2 direction. Further, in Fig. 4, portions of the transparent electrodes 4, 5 are illustrated.

In the step of Fig. 4 (a), transparent electrodes 4, 5 containing ITO are formed on the front surface 2a of the transparent substrate 2. At this time, the connection portion 7 that connects the first transparent electrodes 4 and 4 is integrally formed with the first transparent electrode 4 by ITO.

Next, in the step of FIG. 4(b), the insulating layer 20 containing a phenol resin or the like is formed so as to cover the upper side of the joint portion 7, and to fill the second transparent portion on both sides in the X1-X2 direction of the joint portion 7. Between the electrodes 5. At this time, it is preferred to perform bleaching in which the insulating layer 20 is made transparent by total exposure.

Then, in the step of FIG. 4(c), a bridge wiring 10 including a two-layer structure or a three-layer structure is formed on the front surface of each of the transparent electrodes 4 and 5, the front surface of the insulating layer 20, and the front surface of the transparent substrate 2. The two-layer structure includes a base layer 35 of ITO/a metal layer 36 containing Au, an Au alloy, etc., the three-layer structure including a base layer 35 of ITO/a metal layer 36 containing Au, an Au alloy, or the like/conductive conductive containing ITO Protective oxide layer 37. At this time, each layer of the underlayer 35, the metal layer 36, and the conductive oxide protective layer 37 is formed by sputtering, vapor deposition, or the like.

Further, in FIG. 4(d), the light lithography technique or the like is used, and the front surface of the insulating layer 20 and the front surface of the second transparent electrode 4 located on both sides of the insulating layer 20 are elongated in the X1-X2 direction. The shape of the bridge wire 10 remains. Further, at this time, selective etching is preferably performed so that the front faces of the respective transparent electrodes 4, 5 are not cut. Thereby, the second transparent electrodes 5 and 5 can be electrically connected via the bridge wiring 10.

Thereafter, as shown in FIG. 2(b), the side of the front surface 2a of the transparent substrate 2 and the front surface of the transparent substrate 2 are joined between the panels 3 of the operation surface 3a via the optically transparent adhesive layer 30.

The input device of this embodiment is used for a mobile phone, a digital camera, a PDA (Personal Digital Assistant), a game machine, a car navigation, and the like.

[Examples]

In the experiment, a transparent electrode (ITO), an insulating layer (phenolic resin), and a bridge wiring having the structure shown in Fig. 2 were formed on a transparent substrate. The three-layer structure of the amorphous ITO (base layer) / Au (metal layer) / amorphous ITO (conductive oxide protective layer) of Examples 1 to 3 shown in Table 1 below, and Example 4 Two-layer structure of amorphous ITO (base layer)/Au (metal layer) of Example 6, two-layer structure of CuNi (base layer)/Au (metal layer) of Comparative Example 1, and Ti (base layer of Comparative Example 2) The two-layer structure of /Au (metal layer) and the ITO single-layer film of Comparative Example 3 to Comparative Example 5 form a bridge wire connecting the second transparent electrodes.

Table 1 shows the film thickness of each layer, the width dimension of the bridge wiring (the length in the Y1-Y2 direction shown in Fig. 2(a)), and the length dimension of the bridge wiring (X1 shown in Fig. 2(a)). - the length of the X2 direction). In addition, the transmittance and the reflectance shown in Table 1 were measured in the following state (solid film state): they were formed on the entire front surface of the substrate before being processed into the shape of the bridge wiring.

For the invisible grade shown in Table 1, the X is based on the ITO monolayer film of Comparative Example 3. quasi. Further, in Comparative Example 3, a bridge wiring including ITO was observed. In the case of the Δ system, the bridge wiring was not observed as compared with the comparative example 3, but the state of the bridge wiring was observed when the yoke was tilted, and if the ○ system was inclined, the state in which the total number of the bridged wirings was 10% or less was observed. It is also impossible to observe the state of the bridge wiring.

Further, for the sheet resistance value Rs of the bridge wiring, a case where the value is larger than 60 Ω/□ is ×, 40 to 60 Ω/□ is ○, and less than 40 Ω/□ is ◎.

In addition, the change in resistance of the environmental test in which the temperature was set to 85 ° C and the humidity was 85% RH as an acceleration test was set to × when the rate of change was ±100% or more, or the rate of change was set to ×. The case where ±30% or more and less than ±100% is set to Δ, and the case where the rate of change is within ±30% is ○.

Moreover, the adhesion of the environmental test at 85 ° C in a dry environment was set to x if there was a disconnection, and was set to ○ if there was no disconnection.

Further, in the ESD (Electro-Static Discharge) test (electrostatic breakdown voltage test), less than 1 kV is set to ×, 1 kV or more and less than 2 kV is set to Δ, and 2 kV or more is set to ○.

As shown in Table 1, in Comparative Example 1, the ESD characteristics (electrostatic breakdown voltage) decreased and became unusable. Further, in Comparative Example 2, disconnection occurred in the environmental resistance test. In Comparative Example 2, Ti as a base could not follow the shrinkage of the insulating layer (phenolic resin) and peeled off.

In Comparative Example 3 to Comparative Example 5 shown in Table 1, either of the invisible characteristics and the sheet resistance value Rs was changed to ×.

On the other hand, in the examples, the sheet resistance value Rs, the invisible characteristics, and the environmental test were all absent. Further, in the examples, good ESD characteristics (electrostatic breakdown voltage) can be obtained.

In the first to third embodiments in which the ITO three-layer structure is formed on the back surface of Au, the reflectance can be more suppressed than in the fourth to sixth embodiments of the two-layer structure of ITO/Au, and as a result, the transmittance/reflection can be improved. The ratio of the ratios, so that good invisible characteristics can be obtained.

5‧‧‧2nd transparent electrode

5a‧‧‧ front of the second transparent electrode 5

7‧‧‧Connecting Department

10‧‧‧Bridge wiring

20‧‧‧Insulation

20a‧‧‧Front of insulating layer 20

30‧‧‧Optical Clear Adhesive Layer (OCA)

35‧‧‧ basal layer

36‧‧‧metal layer

37‧‧‧ Conductive oxide protective layer

Claims (10)

An input device comprising: a transparent substrate; a plurality of transparent electrodes formed on a first surface of the transparent substrate; a bridge wire electrically connecting the transparent electrodes; and an insulating layer formed on the insulating layer The transparent substrate and the bridge wire; the transparent electrode includes a plurality of first transparent electrodes and a plurality of second transparent electrodes including ITO, wherein each of the first transparent electrodes is connected in the first direction, and the first transparent layer is The insulating layer is formed on the surface of the connecting portion of the electrode, and each of the second transparent electrodes is connected in a second direction crossing the first direction by the bridge wire formed on the insulating front surface of the insulating layer; the insulating layer is The insulating layer is formed by filling a space between the connecting portion of the first transparent electrode and the second transparent electrode and covering the front surface of the second transparent electrode; and the bridge wiring includes a base layer, a metal layer, and a laminated structure of a conductive oxide protective layer, wherein the underlying layer is formed from the front surface of the insulating layer and is in contact with the front surface of the second transparent electrode and includes amorphous In the ITO, the metal layer is formed only on the front surface of the underlying layer and is formed of Au, and the conductive oxide protective layer is formed only on the front surface of the metal layer and contains amorphous ITO. The input device of claim 1, wherein the bridge wiring has an ESD characteristic of 2 kV or more. The input device of claim 1 or 2, wherein the bridge wiring has a sheet resistance value Rs of less than 40 Ω/□. The input device of claim 1 or 2, wherein the metal layer has a film thickness of 2 to 20 nm. The input device of claim 4, wherein the metal layer has a film thickness of 2 to 6 nm. The input device of claim 1 or 2, wherein the substrate layer has a film thickness of 5 to 40 nm. The input device according to claim 1 or 2, wherein the conductive oxide protective layer has a film thickness of 5 to 40 nm. The input device of claim 1 or 2, wherein the bridge wire has a width dimension of 5 to 50 μm, and the bridge wire has a length dimension of 150 to 500 μm. The input device of claim 1 or 2, wherein the bridge wiring system repeatedly laminates the base layer, the metal layer, and the conductive layer on a front surface of each transparent electrode, a front surface of the insulating layer, and a front surface of the transparent substrate After the oxide protective layer is applied, it is left in the shape of a slender shape from the front surface of the insulating layer and the front surface of the second transparent electrode by photolithography. The input device of claim 1 or 2, wherein said insulating layer is bleached.