TWI475639B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

Info

Publication number
TWI475639B
TWI475639B TW097109641A TW97109641A TWI475639B TW I475639 B TWI475639 B TW I475639B TW 097109641 A TW097109641 A TW 097109641A TW 97109641 A TW97109641 A TW 97109641A TW I475639 B TWI475639 B TW I475639B
Authority
TW
Taiwan
Prior art keywords
single crystal
crystal semiconductor
layers
layer
substrate
Prior art date
Application number
TW097109641A
Other languages
English (en)
Chinese (zh)
Other versions
TW200903709A (en
Inventor
Shunpei Yamazaki
Ikuko Kawamata
Yasuyuki Arai
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200903709A publication Critical patent/TW200903709A/zh
Application granted granted Critical
Publication of TWI475639B publication Critical patent/TWI475639B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Non-Volatile Memory (AREA)
TW097109641A 2007-03-26 2008-03-19 半導體裝置之製造方法 TWI475639B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007079784 2007-03-26

Publications (2)

Publication Number Publication Date
TW200903709A TW200903709A (en) 2009-01-16
TWI475639B true TWI475639B (zh) 2015-03-01

Family

ID=39795161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097109641A TWI475639B (zh) 2007-03-26 2008-03-19 半導體裝置之製造方法

Country Status (4)

Country Link
US (1) US7846817B2 (enExample)
JP (1) JP2008270774A (enExample)
CN (2) CN102231368B (enExample)
TW (1) TWI475639B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1975998A3 (en) * 2007-03-26 2013-12-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a plurality of island-shaped SOI structures
TWI437696B (zh) 2007-09-21 2014-05-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2009094488A (ja) * 2007-09-21 2009-04-30 Semiconductor Energy Lab Co Ltd 半導体膜付き基板の作製方法
JP5490393B2 (ja) * 2007-10-10 2014-05-14 株式会社半導体エネルギー研究所 半導体基板の製造方法
TWI493609B (zh) * 2007-10-23 2015-07-21 Semiconductor Energy Lab 半導體基板、顯示面板及顯示裝置的製造方法
US7816232B2 (en) * 2007-11-27 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and semiconductor substrate manufacturing apparatus
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG160295A1 (en) * 2008-09-29 2010-04-29 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP5558695B2 (ja) 2008-11-18 2014-07-23 株式会社東芝 不揮発性半導体記憶装置
JP5182379B2 (ja) 2009-01-29 2013-04-17 株式会社村田製作所 複合基板の製造方法
JP5562696B2 (ja) * 2009-03-27 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8941113B2 (en) * 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US10340290B2 (en) * 2017-09-15 2019-07-02 Globalfoundries Inc. Stacked SOI semiconductor devices with back bias mechanism
US10546812B1 (en) * 2018-07-13 2020-01-28 International Business Machines Corporation Liner-free and partial liner-free contact/via structures
FR3091010B1 (fr) * 2018-12-24 2020-12-04 Soitec Silicon On Insulator Structure de type semi-conducteur pour applications digitales et radiofréquences, et procédé de fabrication d’une telle structure
CN111952238B (zh) * 2020-08-21 2024-06-14 中国科学院上海微系统与信息技术研究所 具有空腔结构的soi衬底及其制备方法
CN111952240B (zh) * 2020-08-21 2024-06-14 中国科学院上海微系统与信息技术研究所 具有纳米级空腔结构的soi衬底及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238278A (en) * 1979-06-14 1980-12-09 International Business Machines Corporation Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
US5834327A (en) * 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US6093623A (en) * 1998-08-04 2000-07-25 Micron Technology, Inc. Methods for making silicon-on-insulator structures
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
US6380046B1 (en) * 1998-06-22 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures
US20050048736A1 (en) * 2003-09-02 2005-03-03 Sebastien Kerdiles Methods for adhesive transfer of a layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US6211039B1 (en) * 1996-11-12 2001-04-03 Micron Technology, Inc. Silicon-on-insulator islands and method for their formation
JPH1145862A (ja) * 1997-07-24 1999-02-16 Denso Corp 半導体基板の製造方法
JPH1174208A (ja) * 1997-08-27 1999-03-16 Denso Corp 半導体基板の製造方法
JP4507395B2 (ja) * 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
KR100476901B1 (ko) * 2002-05-22 2005-03-17 삼성전자주식회사 소이 반도체기판의 형성방법
FR2860842B1 (fr) * 2003-10-14 2007-11-02 Tracit Technologies Procede de preparation et d'assemblage de substrats
JP2006210899A (ja) * 2004-12-28 2006-08-10 Shin Etsu Chem Co Ltd Ｓｏｉウエーハの製造方法及びｓｏｉウェーハ

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238278A (en) * 1979-06-14 1980-12-09 International Business Machines Corporation Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
US5834327A (en) * 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
US6380046B1 (en) * 1998-06-22 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20020109144A1 (en) * 1998-06-22 2002-08-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6093623A (en) * 1998-08-04 2000-07-25 Micron Technology, Inc. Methods for making silicon-on-insulator structures
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
US20050048736A1 (en) * 2003-09-02 2005-03-03 Sebastien Kerdiles Methods for adhesive transfer of a layer

Also Published As

Publication number Publication date
CN102231368A (zh) 2011-11-02
TW200903709A (en) 2009-01-16
US20080242050A1 (en) 2008-10-02
CN101276736B (zh) 2011-09-07
CN101276736A (zh) 2008-10-01
JP2008270774A (ja) 2008-11-06
CN102231368B (zh) 2014-12-31
US7846817B2 (en) 2010-12-07

Similar Documents

Publication Publication Date Title
TWI475639B (zh) 半導體裝置之製造方法
US7682931B2 (en) Method for manufacturing semiconductor device
CN101047192B (zh) 非易失性半导体存储器件
TWI449180B (zh) 半導體裝置和其製造方法
JP5604492B2 (ja) 半導体装置
CN101064321B (zh) 半导体器件及其制造方法
US8329536B2 (en) Method for manufacturing semiconductor device with silicon nitride charge trapping film having varying hydrogen concentration
CN101647113B (zh) 半导体装置及其制造方法
JP5128172B2 (ja) 半導体装置の作製方法
KR20070095791A (ko) 불휘발성 반도체 기억장치
JP5271504B2 (ja) 半導体装置の作製方法
JP5132171B2 (ja) 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法
JP4348962B2 (ja) 不揮発性記憶素子、半導体記憶装置および不揮発性記憶素子の製造方法
JP5164406B2 (ja) 不揮発性半導体記憶装置
JP2007294911A (ja) 不揮発性半導体記憶装置
JP5121217B2 (ja) 半導体装置の作製方法
JP2007288175A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees