TWI470833B - 半導體裝置及其製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 69
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 230000005641 tunneling Effects 0.000 claims description 5
- 239000000615 nonconductor Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Description
本發明係有關一種半導體裝置，特別是關於一種垂直式半導體裝置。
第一圖顯示傳統半導體裝置100的立體示意圖，其結構由下而上依序為藍寶石基板11、n型摻雜層12、主動層13、p型摻雜層14、透明接觸層15、負電極16及正電極17。此種結構之發光二極體又稱為水平式發光二極體，因為其電流由正電極17至負電極16的流向為水平流向。電流容易在負電極16下方產生電流擁擠現象，因而造成操作電壓上升及動態電阻的增加，因而升高元件的溫度。
因此亟需提出一種新穎的半導體裝置，用以解決上述電流擁擠及溫度升高的問題。
鑑於上述，本發明實施例提出一種垂直式半導體裝置及其製造方法，其結構可降低或避免傳統水平式半導體裝置的電流擁擠現象，及其所造成的操作電壓上升、動態電阻增加及溫度升高等問題。
根據本發明實施例，首先提供一基板，且形成至少一磊晶
結構於上。接著，切割並剝離基板的一部分，以曝露磊晶結構的部分表面。形成第一電極於磊晶結構的曝露表面，因而形成垂直式半導體裝置。在一實施例中，提供一導電基板，且耦接導電基板於至少一磊晶結構相對於基板的另一側，因而形成覆晶式半導體裝置。
100‧‧‧半導體裝置
11‧‧‧藍寶石基板
12‧‧‧n型摻雜層
13‧‧‧主動層
14‧‧‧p型摻雜層
15‧‧‧透明接觸層
16‧‧‧負電極
17‧‧‧正電極
200‧‧‧半導體裝置
300‧‧‧半導體裝置
21‧‧‧基板
211‧‧‧空缺區
22‧‧‧磊晶結構
221‧‧‧第一摻雜層
222‧‧‧主動層
223‧‧‧第二摻雜層
224‧‧‧穿隧接面
22’‧‧‧磊晶結構
225‧‧‧第一摻雜層
226‧‧‧主動層
227‧‧‧第二摻雜層
23‧‧‧第一電極
24‧‧‧第二電極
25‧‧‧透明導電層
26‧‧‧導電基板
28‧‧‧阻隔層
第一圖顯示傳統發光二極體的立體示意圖。
第二A圖至第二F圖顯示本發明第一實施例之半導體裝置的製程剖面或立體圖。
第三A圖至第三E圖顯示本發明第二實施例之半導體裝置的製程剖面或立體圖。
第二A圖至第二F圖顯示本發明第一實施例之半導體裝置200的製程剖面或立體圖。本實施例雖以發光二極體(LED)及光伏電池(photovoltaic cell)作為例示，然而本發明也可適用於其他半導體裝置，例如電晶體(transistor)或其他二極體(diode)。
首先，如第二A圖所示，提供一基板21。在本實施例中，基板21的材質可吸收第一光波段，並供第二光波段穿透，其中第一光波段與第二光波段相異。此外，基板21為非導體，例如藍寶石(sapphire)，然而也可以使用其他材質，例如玻璃或石英，但不限定於此。本實施例若以發光二極體(LED)作為例示，則第二光波段可介於400奈米至1600奈米。若本實施例以光伏電池作為例示，則第二光波
段可介於200奈米至2000奈米。此外，基板21包括極化(polar)基板、半極化(semi-polar)基板或非極化(non-polar)基板。
接著，以磊晶製程技術形成至少一磊晶結構22於基板21上。在本實施例中，磊晶結構22依序包含第一摻雜層221、主動層222及第二摻雜層223，其中第一摻雜層221靠近基板21，第二摻雜層223遠離基板21，且主動層222位於第一摻雜層221與第二摻雜層223之間。此外，第一摻雜層221的電性相反於第二摻雜層223的電性。例如，第一摻雜層221為n型摻雜，且第二摻雜層223為p型摻雜。主動層222可以是單一量子井(SQW)層或多重量子井(MQW)層，但不限定於此。本實施例之磊晶結構22的材質可為三族氮化物，例如氮化銦(InN)、氮化鎵(GaN)、氮化鋁(AlN)、氮化銦鎵(InGaN)、氮化銦鋁鎵(InAlGaN)等，但不限定於上述。
第二B圖顯示第二A圖的另一變化態樣。在本實施例中，形成多個磊晶結構於基板21上，例如依序形成磊晶結構22及磊晶結構22’，以形成堆疊磊晶結構於基板21上。其中，磊晶結構22’藉由穿隧接面224而堆疊於磊晶結構22上。本實施例之磊晶結構22’依序包含第一摻雜層225、主動層226及第二摻雜層227，其中第一摻雜層225靠近穿隧接面224，第二摻雜層227遠離穿隧接面224，且主動層226位於第一摻雜層225與第二摻雜層227之間。此外，第一摻雜層225的電性相反於第二摻雜層227的電性。例如，第一摻雜層225為n型摻雜，且第二摻雜層227為p型摻雜。主動層226可以是單一量子井(SQW)層或多重量子井(MQW)層，但不限定於此。本實施例之磊晶結構22’的材質可為三族氮化物，例如氮化銦(InN)、氮化鎵(GaN)、氮化鋁(AlN)、氮化銦鎵(InGaN)、氮化銦鋁鎵(InAlGaN)等，但不限定於上述。
上述形成磊晶結構22於基板21之前，還可額外圖形化(pattern)基板21的表面，如第二C圖所示。具圖形化表面的基板21可加強光的散射，因而增加光的射出量。若本實施例以光伏電池作為例示，則圖形化表面的基板21可使得光於磊晶結構22中來回通過，而增加光吸收量，有利於光電轉換。
接下來，如第二D圖所示的剖面圖或第二E圖所示的立體圖，切割(cut)並剝離(lift off)基板21的一部分，以曝露第一摻雜層221的部分表面，因而於基板21形成一空缺區211。本實施例使用雷射光剝離技術以進行基板21的切割與剝離，但不限定於此。上述雷射光剝離技術所使用之雷射光之光波長介於第一光波段中，由於基板21的材質可吸收第一光波段，因此基板21吸收雷射光而被加熱部分剝離消除，因而形成空缺區211。
上述空缺區211的形狀及位置不限定於第二D/二E圖所示。在一實施例中，於進行基板21的切割及剝離製程之前，還可額外拋光研磨(polish)基板21，使其厚度變薄，使得供第二光波段穿透之光穿透率效果更佳，且有利於切割及剝離製程的進行。接著，形成第一電極23於空缺區211中第一摻雜層221的曝露表面。第一電極23的材質為導體，例如金屬。
如第二F圖所示，形成第二電極24於磊晶結構22相對於基板21的另一側(例如圖示中的第二摻雜層223)。第二電極24的材質為導體，例如金屬。藉此，形成一種垂直式半導體裝置，電流由第二電極24至第一電極23的流向為垂直流向。本實施例所形成的結構不會有傳統水平式半導體裝置(如第一圖所示)的電流擁擠現象。在一實施例中，第二電極24與磊晶結構22之間更形成透明導電層(或透明接觸
層)25，用以增強電流的分散(spreading)。透明導電層25的材質可為銻錫氧化物(Antimony Tin Oxide,ATO)、銦錫氧化物(Indium Tin Oxide,ITO)、氧化錫(Tin Oxide,SnO2)、氧化鋅摻雜鋁(aluminum doped zinc oxide,AZO)、氧化鋅摻雜鎵(Gallium doped zinc oxide,GZO)和氧化鋅摻雜銦(Indium doped zinc oxide,IZO)，但不以上述為限。
第三A圖至第三E圖顯示本發明第二實施例之半導體裝置300的製程剖面或立體圖。如第三A圖所示，形成磊晶結構22於基板21上，且形成第一電極23於空缺區211中第一摻雜層221的曝露表面。相關細節可參考第一實施例之第二A圖至第二E圖所示，不再贅述。
接著，如第三B圖所示，提供導電基板26並耦接於磊晶結構22相對於基板21的另一側(例如圖示中的第二摻雜層223)，用以作為電極之用。將第三B圖的結構上下翻轉後得到一種覆晶式的半導體裝置，如第三C圖所示的立體圖。於本實施例中半導體裝置以發光二極體作為例示，基板21係作為視窗(window)層，其不但具有保護作用，且可供由磊晶結構22出射介於400奈米至1600奈米之第二光波段，以增加側面光線的射出量。若本實施例以光伏電池作為例示，則基板21可供介於200奈米至2000奈米之第二光波段入射至磊晶結構22，可增加側面光線的入射量，以提高光伏電池的光電轉換量。
上述導電基板26與磊晶結構22之間還可額外形成透明導電層25，用以增強電流的分散，如第三D圖所示。導電基板26為金屬等可導電且具有良好反射之材質，因此可增強光線的射出，或反射回收利用。
第三E圖顯示於導電基板26耦接有多個覆晶式半導體裝置
(圖式以兩個為例)。該些覆晶式半導體裝置可使用前述第三A圖至第三D圖所示製程，先形成一整體結構，再以蝕刻製程除去部分基板21與磊晶結構22，直到曝露出導電基板26，因而形成互為並聯的多個覆晶式半導體裝置，其形成一半導體裝置陣列。在另一實施例中，也可使用第三A圖所示製程，先形成多個覆晶式半導體裝置，再將其耦接至同一個導電基板26，因而形成互為並聯或串聯的多個覆晶式半導體裝置，其形成一半導體裝置陣列。為了避免相鄰覆晶式半導體裝置之間光線的干擾，可於磊晶結構22的側壁額外形成阻隔(passivation)層28。
以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍內。
200‧‧‧半導體裝置
21‧‧‧基板
22‧‧‧磊晶結構
221‧‧‧第一摻雜層
222‧‧‧主動層
223‧‧‧第二摻雜層
23‧‧‧第一電極
Claims (21)
- 一種半導體裝置的製造方法，包含：提供一基板；形成至少一磊晶結構於該基板上；切割並剝離該基板的一部分，以曝露該磊晶結構的一部分表面；及形成一第一電極於該部份表面。
- 如申請專利範圍第1項所述半導體裝置的製造方法，其中該基板的切割與剝離係使用一雷射光剝離技術，其中該雷射光之光波長介於一第一光波段。
- 如申請專利範圍第2項所述半導體裝置的製造方法，其中該基板的材質可吸收該第一光波段，並供一第二光波段穿透，且該第一光波段與該第二光波段相異。
- 如申請專利範圍第1項所述半導體裝置的製造方法，其中該基板的材質為非導體。
- 如申請專利範圍第1項所述半導體裝置的製造方法，其中該磊晶結構之材質包含三族氮化物。
- 如申請專利範圍第1項所述半導體裝置的製造方法，其中該至少一磊晶結構包含複數磊晶結構，相鄰的該些磊晶結構藉由一穿隧接面而形成一堆疊磊晶結構。
- 如申請專利範圍第1項所述半導體裝置的製造方法，於形成該磊晶結構之前，更包含：圖形化(pattern)該基板面向該磊晶結構的表面。
- 如申請專利範圍第1項所述半導體裝置的製造方法，於切割及剝離該基板之前，更包含拋光研磨(polish)該基板使其厚度變薄。
- 如申請專利範圍第1項所述半導體裝置的製造方法，更包含形成一 第二電極於該磊晶結構相對於該基板的另一側。
- 如申請專利範圍第1項所述半導體裝置的製造方法，更包含：提供一導電基板；及耦接該導電基板於該至少一磊晶結構相對於該基板的另一側。
- 一種半導體裝置，包含：一基板，具有一空缺區，其中該基板的材質可吸收一第一光波段而被部分剝離，形成該空缺區，並供一第二光波段穿透，且該第一光波段與該第二光波段相異；至少一磊晶結構，形成於該基板上，該空缺區曝露該磊晶結構的一部分表面；及一第一電極，形成於該部分表面。
- 如申請專利範圍第11項所述半導體裝置，其中該基板的材質為非導體。
- 如申請專利範圍第11項所述半導體裝置，其中該磊晶結構之材質包含三族氮化物。
- 如申請專利範圍第11項所述半導體裝置，其中該磊晶結構包含一第一摻雜層、一主動層及一第二摻雜層，該第一摻雜層靠近該基板，該空缺區曝露該第一摻雜層的該部分表面，該第二摻雜層遠離該基板，該主動層位於該第一摻雜層與該第二摻雜層之間，且該第一摻雜層的電性相反於該第二摻雜層的電性。
- 如申請專利範圍第11項所述半導體裝置包括一發光裝置，其中該第二光波段係介於400奈米至1600奈米。
- 如申請專利範圍第11項所述半導體裝置包括一光伏電池，其中該 第二光波段係介於200奈米至2000奈米。
- 如申請專利範圍第11項所述半導體裝置，其中該至少一磊晶結構包含複數磊晶結構，相鄰的該些磊晶結構藉由一穿隧接面而形成一堆疊磊晶結構。
- 如申請專利範圍第11項所述半導體裝置，其中該基板具有一圖形化表面，該圖形化表面朝向該磊晶結構。
- 如申請專利範圍第11項所述半導體裝置，更包含一第二電極，形成於該磊晶結構相對於該基板的另一側。
- 如申請專利範圍第11項所述半導體裝置，更包含一導電基板，其耦接於該至少一磊晶結構相對於該基板的另一側。
- 如申請專利範圍第20項所述半導體裝置，其中耦接於該導電基板的該至少一磊晶結構包含複數磊晶結構，其互為並聯或串聯以形成一半導體裝置陣列。
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| US20130320358A1 (en) | 2013-12-05 |
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