TWI467641B - 晶圓狀物件之液體處理裝置及製程 - Google Patents

晶圓狀物件之液體處理裝置及製程 Download PDF

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TWI467641B
TWI467641B TW99144470A TW99144470A TWI467641B TW I467641 B TWI467641 B TW I467641B TW 99144470 A TW99144470 A TW 99144470A TW 99144470 A TW99144470 A TW 99144470A TW I467641 B TWI467641 B TW I467641B
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substrate
peripheral surface
wafer
upper peripheral
support portion
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Frank Dieter
Michael Puggl
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Lam Res Ag
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Description

晶圓狀物件之液體處理裝置及製程
本發明係關於用在晶圓狀物件之表面的液體處理裝置及製程。
液體處理包含溼式蝕刻與溼式清理兩者，其中以處理液體來溼潤待處理之晶圓的表面區域，並因此移除此晶圓的一層或者因此去除雜質。在美國專利第4,903,717號中描述一液體處理裝置，於此裝置中，晶圓狀物件係安裝在旋轉夾具上，而處理液體係從夾具上方施加到非面向夾具的晶圓表面上。吾人可藉由晶圓的旋轉運動來促進液體的分佈。隨著液體被橫向甩過晶圓之邊緣，此種旋轉運動亦可促進從晶圓之表面移除液體。第4,903,717號專利揭露以氣體沖洗晶圓之面向夾具表面的一夾具。如此，在夾具的周緣與面向夾具之晶圓之主表面的周緣之間係形成一環狀噴嘴。流動氣體係從此環狀噴嘴排放，並因此限制處理液體可流到晶圓之面向夾具表面上的範圍；然而，在處理晶圓的上主表面時，並沒有提供限制晶圓之邊緣表面的處理。
美國專利第6,328,846號揭露位於旋轉夾具之周邊上的導向元件，其係選擇性地與夾具所支撐之晶圓的邊緣嚙合，並藉此在處理晶圓時限制晶圓的不良橫向運動。該專利並揭露三個以上具有圓柱形狀的銷，當其環繞晶圓隔開並移動以嚙合晶圓的邊緣時係足以限制晶圓的橫向運動。這些銷係配置垂直於晶圓的主表面以及夾具，並且透過鑽孔在夾具之上延伸。這些銷在放置於夾具上之後，係在晶圓的邊緣之上延伸並且抵靠著晶圓移動。在此專利所揭露之實施例中，晶圓係浮在夾具上方之由夾具所排放之氣體的襯墊上。此氣體沖洗面向夾具之晶圓的表面，並且在晶圓的周緣從夾具加以排放。
第6,328,846號專利揭露處理液體可能會沿著當抵靠晶圓之邊緣嚙合時的銷流動並且處理晶圓的下相對主表面，而在晶圓的邊緣以及面向夾具表面上引起所謂的針跡(pin marks)。為了避免此種問題，第6,328,846號專利揭露與各銷相關的一個別噴嘴，其係局部化於此銷結構而以氣體沖洗此銷區域。此氣體防止處理液體沿著銷流動並防止其處理晶圓之邊緣表面與面向夾具表面。
在某些製程中，欲處理晶圓的主表面而不處理晶圓之相對主表面亦不處理晶圓之邊緣表面。此外，在某些製程中，更欲防止沿著晶圓的整個周圍來處理晶圓的邊緣表面。在此種處理期間，若使用具有超出與真空力(用以將晶圓吸引至夾具)產生平衡所需之流率的氣體，亦可能欲限制晶圓的垂直位移。尤其，對於例如第4,903,717號以及第6,328,846號專利所揭露的夾具而言，此夾具係使用晶圓的底側氣體沖洗來控制應用在晶圓之頂側的液體處理，可能亟欲增加氣流，以影響流動氣體控制或限制處理液體的手段。然而，若晶圓未被固定來防備此種垂直移動，增加此種夾具中之氣流可能會使晶圓舉升而遠離夾具。
本發明之一目的在於在晶圓之面朝上表面之液體處理期間，限制晶圓之邊緣與面朝下表面的處理。本發明係藉由導向氣流以使其約略沿著晶圓邊緣表面輪廓行進而達到此目的。此氣體沖洗邊緣表面，並因此防止施加至晶圓之上主表面的處理液體對由流動氣體所界定之晶圓的邊緣區域進行處理。
在較佳實施例中，複數個環狀噴嘴係用以沖洗晶圓邊緣的實質上整個周圍。這些環狀噴嘴係界定出由面向此結構之晶圓表面所量測出之窄和較不窄的環狀通道，透過此結構，氣體可繞過晶圓邊緣而流動，然後遠離晶圓的上表面。這些較佳實施例亦包含具有頭部的固定銷，其用以在增加晶圓下方之氣流時限制晶圓於垂直方向上的移動。
所揭露之實施例為使用氣流以將晶圓支撐在氣體襯墊上的旋轉夾具；然而，本發明亦可用於其他材料的處理表面，例如在製造光碟以及LCD顯示面板時所使用之玻璃主盤(glass masters)以及母盤(mother panels)。
在圖1中，晶圓W係浮在氣體的襯墊上，並且藉由下述的銷來防止其朝上移動超過旋轉夾具1上方的一預定距離。處理液體係透過配送器2配送到此晶圓上。如下所詳述，環50用以防止處理液體對於晶圓的底側或對超過晶圓之邊緣表面的預定量進行處理。
如圖2所示，旋轉夾具1包含三個基體元件：下部件10、中間部件20、以及上部件30(以下又稱為上基體30)。下與中間基體元件較佳係以螺栓固定在一起，這些螺栓之其中一者係顯示為15。
環50係藉由安裝螺栓51而安裝於此夾具。此環具有開口，以允許夾持銷56延伸穿過環50並且在此夾具之上平面之上延伸。六個凹穴49係形成在此環內，俾能使一僅邊緣接觸(edge-contact-only)夾持器(例如，如美國專利第5,762,391號所述)可從此夾具移除晶圓或者可將晶圓放置到此夾具上。
在中間部件20與上部件30之間存在有一空間25，其可填滿潔淨的加壓氣體(例如氮)。位於空間25中的加壓氣體流過三個同心排列的噴嘴陣列：內噴嘴陣列32、中間噴嘴陣列33、以及外噴嘴陣列34。透過噴嘴32、33、34所排放的氣體提供一氣體襯墊，晶圓係浮在此氣體襯墊上，此氣體襯墊亦可經由柏努力原理(Bernoulli principle)而促進將晶圓固定於此夾具。
在圖3中，於下部件10與中間部件20之間，設置有一空間以容納鋸齒形齒輪環73(以下又稱為鋸齒齒輪73)，其係透過球形軸承72連接至下基體元件。利用桿71，吾人可在此夾具轉動些許角度時固定鋸齒齒輪73，俾能使鋸齒齒輪73驅動銷56開啟。此鋸齒齒輪係藉由彈簧(未圖示)而保持在一關閉位置。
圖4詳細顯示上基體30與環50的結構，其係規劃自噴嘴32、33、以及34所排放之氣體從晶圓之面向夾具表面、在晶圓之邊緣部分附近、以及遠離晶圓之上表面的路徑。
上基體30的上表面(面向晶圓的夾具表面)在其周邊區域為圓錐形，並形成其頂點係低於夾具之上表面的錐形體。因此，當晶 圓W係設置垂直於夾具的旋轉軸並位在夾具的預定距離上時，晶圓的水平面朝下周邊與上夾具表面的圓錐形周邊可一起界定環狀噴嘴35，此環狀噴嘴係從此夾具的徑向朝外縮窄並且結束於一具有軸向長度”a”的環狀開口。在所示之實施例中，開口”a”為0.3mm。一般而言，開口”a”較佳係在0.1mm到1mm的範圍內，並且更佳係在0.2mm到0.5mm的範圍內。
上基體30的圓錐形周邊係由一凸柱肩部加以界定，此凸柱肩部係面對環50並且與其隔開一環狀間隙或空間36，此環狀間隙或空間係在徑向上由此肩部朝內加以界定。空間36的其他邊界為環50的凹柱徑向面朝內表面、上基體30的下部分、以及使用中的晶圓。氣體係從噴嘴35排放到此空間內。
第二環狀噴嘴係由形成在環50上的圓錐形唇部37與上覆晶圓表面一起界定。在所示之實施例中，離開噴嘴35並通過間隙36的氣體必須通過由唇部37與晶圓所形成的環狀噴嘴，並且實質上所有從間隙36排放的氣體皆通過此環狀噴嘴。此第二噴嘴係由唇部37與晶圓W之間位於最窄點處的差別距離以及由此點(即，在間隙或空間36內)往上游而與夾具(即，此環與上基體30)之間距離較大之處的距離所形成。如圖所示，夾具與晶圓之間的距離係在流動方向上沿著唇部37的傾斜部分縮窄。又，於空間36內，在夾具與晶圓之間的較上游距離係大於任何此種沿著唇部37之傾斜部分的距離。
第三環狀噴嘴係由肩部53以及與其面對之晶圓W的周緣所形成。由唇部37與晶圓所產生之噴嘴排放的氣體會遇到環狀空間52。空間52包含從晶圓到夾具(即，環50)的距離，其係大於位在唇部37之從晶圓到夾具的最窄距離。又，相較於在空間52內的距離，由肩部53所產生之環狀噴嘴的距離b呈現出夾具到晶圓的距離係相對地窄。距離”b”較佳為0.3mm到3mm，並且更佳為0.5mm到2mm。從第三噴嘴排放氣體的方式係用以防止處理液體對晶圓之邊緣表面進行處理。
圖4所示的三個環狀噴嘴係各由夾具與晶圓的組合所形成。 對於每一噴嘴而言，夾具的形狀使得由噴嘴之較上游部分所界定之與晶圓的距離係相對大於由噴嘴之較下游部分所界定之與晶圓的距離。這些差別距離係對應至氣體所流過的差別體積區域。
圖5顯示螺栓51將環50固定於上基體30的方式。雖然，所示之實施例係提供環50，但替代實施例可將產生複數個周邊環狀噴嘴所需的結構與此夾具基體整合在一起。例如，環50可整合入上基體30而唇部37、肩部53以及位於其間的環狀空間52可整合入上基體30，而非與環50整合。
銷56在其上端具有一特定形狀，以限制晶圓在其處理期間於軸向上的移動。每一個銷56的上端為洋菇狀(mushroom-shaped)或在頭部59(參見圖8與9)朝外傾斜。環50包含孔洞，以使此銷通過此環並透過其偏心運動範圍而旋轉(參見圖8)。為了使對銷所設置的孔洞排水，在環50中設置開口55。鋸齒齒輪73係透過位在銷之基底75的互補輪齒(未圖示)來驅動銷。鋸齒齒輪73係藉由使銷轉動而控制銷到晶圓上的開啟與關閉。
在典型的晶圓處理中，當裝載晶圓時，選擇氣體流量，以使晶圓支撐在夾具上方的襯墊上而不接觸夾具。此初始氣體流量係相當於習知用於柏努力型夾具的流量，亦即選擇流率，以使晶圓上的向上力大致與藉由徑向朝外加速氣流所產生的真空力抵消。在將銷關閉並且局限晶圓不可進一步朝上位移之後，可選擇性地增加氣體流量，以增加氣流的舉升力。然而，晶圓從夾具的垂直舉升會因為銷而受到限制。銷的頭部分相較於身體部分係具有直徑加大的形狀。藉由使用此種銷，晶圓的垂直移動係受到限制；而氣體流率的增加乃使氣體通過此系列的環狀噴嘴的速度增加，而不會使晶圓與夾具的距離增加。
在下列表中說明依照本發明之典型晶圓處理的步驟：
因為位於凹穴49之區域以及位於靠近銷56之區域的晶圓邊緣之處理會有所差異，故亟欲步驟6的晶圓偏移。為了達成受到更均勻處理的晶圓邊緣，晶圓較佳係相對於夾具而偏移若干度數。不論是根據順時針或逆時針的轉動方向，吾人皆可將夾具速度降低或增加例如零點幾秒。由於鋸齒齒輪73的慣性力矩，此鋸齒齒輪會相對於夾具基體轉動若干度數，並因此可使銷開啟。當銷開啟時，晶圓會因為其慣性力矩而相對於夾具轉動。之後，晶圓會再次由銷加以自動固定，但是，是固定在稍微扭曲的位置上。
因此，吾人可瞭解圖4所示之環輪廓可能會被例如銷56以及凹穴49的其他結構所遮斷。然而，如圖4所示之環輪廓較佳係在夾具基體之上表面的大部分周圍上方延伸，而且較佳係在從夾具 基體之上表面之整個360°周圍的15°跨到20°之多個弧形區域上方延伸而不被遮斷。
本發明之上述說明與例示性實施例已就詳細實施例進行詳述。然而，吾人應瞭解到本發明之上述說明僅為示範，以及本發明之範圍係僅受如適當解釋之請求項所限制。
對於以氣體襯墊來支撐晶圓的夾具、及/或以柏努力效應來固定晶圓的夾具而言，用於支撐晶圓及/或用以調節柏努力效應的相同氣體介質可透過依照本發明的複數個邊緣區域環狀噴嘴加以導引。對於此種夾具而言，每一個環狀噴嘴係配置於在夾具與晶圓之間形成氣體襯墊之區域的周邊。
依照本發明，雖然所示之實施例係規定相同的氣流可促進晶圓的支撐，此外，並且可用以防止處理流體到達晶圓的邊緣表面，但本發明不一定要實施在利用此種氣體襯墊的夾具上。
1‧‧‧旋轉夾具
2‧‧‧配送器
10‧‧‧下部件
15‧‧‧螺栓
20‧‧‧中間部件
25‧‧‧空間
30‧‧‧上部件
32‧‧‧內噴嘴陣列
33‧‧‧中間噴嘴陣列
34‧‧‧外噴嘴陣列
35‧‧‧環狀噴嘴
36‧‧‧環狀間隙或空間
37‧‧‧圓錐形唇部
49‧‧‧凹穴
50‧‧‧環
51‧‧‧螺栓
52‧‧‧環狀空間
53‧‧‧肩部
55‧‧‧開口
56‧‧‧銷
59‧‧‧頭部
71‧‧‧桿
72‧‧‧球形軸承
73‧‧‧鋸齒齒輪
75‧‧‧基底
W‧‧‧晶圓
隨附圖式顯示本發明之較佳實施例，並且與上述說明一起進一步解釋本發明。在這些圖式中：圖1為包含旋轉夾具1之單一晶圓溼式處理設備的概略立體圖，此旋轉夾具包含環50並且裝載晶圓W；圖2為圖1之旋轉夾具的部分詳細立體圖；圖3為圖1之旋轉夾具的軸向橫剖面；圖4為圖3之細部IV的放大圖；圖5為圖3之細部V的放大圖；圖6為類似於圖2的圖，其係位在旋轉夾具1的不同角度方位；圖7為圖6之細部VII的放大圖；圖8為圖7之細部VIII的放大圖；及圖9為如圖7所示之銷56的立體圖。
35．．．環狀噴嘴
36．．．環狀間隙或空間
37．．．圓錐形唇部
50．．．環
52．．．環狀空間
53．．．肩部

Claims (17)

  1. 一種基板表面的處理裝置，包含：一支撐部，用以將一基板設置在一預定方位；該支撐部的一第一上周邊表面，與設置在該支撐部上方的一基板界定一第一噴嘴；該支撐部的一第二上周邊表面，從該第一上周邊表面朝外設置，並與設置在該支撐部上方的一基板界定一第二噴嘴；其中該第一與第二上周邊表面係由形成於其間的一凹部所隔開；一氣體供應器，用以提供橫越該第一與第二上周邊表面的一向外氣流；及該支撐部的一面朝內周邊表面，設置在該第一與第二上周邊表面之外並且面對設置在該支撐部上之一基板的周緣，該面朝內周邊表面用以朝上導引離開該第二噴嘴的一氣流。
  2. 如申請專利範圍第1項所述之基板表面的處理裝置，其中該裝置為一單一晶圓溼式處理設備，並且其中該支撐部為一旋轉夾具。
  3. 如申請專利範圍第1項所述之基板表面的處理裝置，更包含一周邊系列的銷，該銷用以接觸設置在該支撐部上之一基板的周緣，該銷係從該支撐部朝上延伸並且設置在該第一上周邊表面之外以及至少部分設置在該面朝內周邊表面之內。
  4. 如申請專利範圍第3項所述之基板表面的處理裝置，其中該銷具有一擴大頭部，該頭部用以嚙合一基板的周緣，俾能防止一基板的垂直朝上位移。
  5. 如申請專利範圍第1項所述之基板表面的處理裝置，其中該凹部為一第一略呈柱狀間隙，該間隙係位於該第一噴嘴附近並且在該第一與第二噴嘴之間的軸向上朝下延伸。
  6. 如申請專利範圍第5項所述之基板表面的處理裝置，其中該第二噴嘴與該面朝內周邊表面係由一第二略呈柱狀間隙所隔開以界定一第三噴嘴，該第二略呈柱狀間隙係寬於該第一略呈柱狀間隙並且在軸向上朝下延伸至一深度，該深度係淺於該第一略呈柱狀間隙。
  7. 如申請專利範圍第1項所述之基板表面的處理裝置，其中該支撐部的該第一與第二上周邊表面為圓錐形，並形成各自具有一頂點的錐形體，該頂點係設置在該第一與第二上周邊表面之下。
  8. 如申請專利範圍第1項所述之基板表面的處理裝置，其中該第一上周邊表面係形成在該支撐部的一上部件上；而該第二上周邊表面與該面朝內周邊表面係形成在一環上，該環係牢固地固定於該支撐部的該上部件。
  9. 一種基板表面的處理製程，包含下列步驟：將一基板局限在一支撐部上方的一預定距離上；將一氣流導向該基板之一面朝下表面的周邊區域，該支撐部包含一第一上周邊表面、一第二上周邊表面、以及一面朝內周邊表面，該第一上周邊表面與該基板界定一第一噴嘴，而該第二上周邊表面係從該第一上周邊表面朝外設置並且與該基板界定一第二噴嘴，該第一與第二上周邊表面係由形成於其間的一凹部所隔開，該面朝內周邊表面係設置在該第一與第二上周邊表面之外並且面對該基板的周緣；其中該氣流通過該第一與第二噴嘴，然後藉由該面朝內周邊表面朝上導引。
  10. 如申請專利範圍第9項所述之基板表面的處理製程，其中藉由一系列的銷，將該基板局限在該支撐部上方的該預定距離上，該銷係與該基板的周緣嚙合。
  11. 如申請專利範圍第10項所述之基板表面的處理製程，其中在該基板不受該系列的銷所局限時，該氣流係以能夠將該基板舉升至該預定距離之上的一流率加以供應。
  12. 如申請專利範圍第11項所述之基板表面的處理製程，其中該流率為50-400L/min。
  13. 如申請專利範圍第11項所述之基板表面的處理製程，其中該流率為200-300L/min。
  14. 如申請專利範圍第9項所述之基板表面的處理製程，其中該支撐部為一單一晶圓溼式處理設備中的一旋轉夾具，並且其中該基板為一半導體晶圓。
  15. 如申請專利範圍第9項所述之基板表面的處理製程，其中該第一上周邊表面係形成在該支撐部的一上部件上；而該第二周邊表面與該面朝內周邊表面係形成在一環上，該環係牢固地固定於該支撐部的該上部件。
  16. 一種環，使用於如申請專利範圍第8項所述之基板表面的處理裝置，其中該環包含：複數開口，允許複數夾持銷延伸穿過該環、及在一夾具之上平面之上延伸；及複數凹穴，形成在該環中，俾使一僅邊緣接觸夾持器能夠從該夾具移除一基板、或將一基板放置到該夾具上。
  17. 如申請專利範圍第16項所述之環，其中該環更包含一唇部，其中當該基板被放置在該夾具上時該唇部在該基板間形成一噴嘴。
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US20110151675A1 (en) 2011-06-23
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US8596623B2 (en) 2013-12-03
CN102714153A (zh) 2012-10-03
KR101795089B1 (ko) 2017-12-01
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WO2011073840A2 (en) 2011-06-23
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