TWI466611B - Printed circuit board having buried component, method for manufacturing same and chip package structure - Google Patents
Printed circuit board having buried component, method for manufacturing same and chip package structure Download PDFInfo
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- TWI466611B TWI466611B TW102101268A TW102101268A TWI466611B TW I466611 B TWI466611 B TW I466611B TW 102101268 A TW102101268 A TW 102101268A TW 102101268 A TW102101268 A TW 102101268A TW I466611 B TWI466611 B TW I466611B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Description
本發明涉及電路板製作領域,尤其涉及一種具有內埋元件的電路板、採用該電路板的晶片封裝結構及其製作方法。The present invention relates to the field of circuit board manufacturing, and in particular, to a circuit board having a buried component, a chip package structure using the same, and a manufacturing method thereof.
印刷電路板因具有裝配密度高等優點而得到了廣泛的應用。關於電路板的應用請參見文獻Takahashi, A. Ooki, N. Nagai, A. Akahoshi, H. Mukoh, A. Wajima, M. Res. Lab, High density multilayer printed circuit board for HITAC M-880,IEEE Trans. on Components, Packaging, and Manufacturing Technology, 1992, 15(4): 1418-1425。Printed circuit boards have been widely used due to their high assembly density. For application of the board, please refer to the literature Takahashi, A. Ooki, N. Nagai, A. Akahoshi, H. Mukoh, A. Wajima, M. Res. Lab, High density multilayer printed circuit board for HITAC M-880, IEEE Trans On Components, Packaging, and Manufacturing Technology, 1992, 15(4): 1418-1425.
習知技術的印刷電路板的電子元件大多設置於電路板的外側,如此則增大了印刷電路板的整體體積;另外,當印刷電路板需要設置較多的電子元件時,由於印刷電路板的表面積有限,電子元件的設置數量也大大受限。該電子元件可以為主動或被動元件,如電阻、電容等。The electronic components of the printed circuit board of the prior art are mostly disposed on the outer side of the circuit board, thus increasing the overall volume of the printed circuit board; in addition, when the printed circuit board needs to be provided with more electronic components, due to the printed circuit board The surface area is limited and the number of electronic components is also greatly limited. The electronic component can be an active or passive component such as a resistor, a capacitor, or the like.
因此,有必要提供一種體積較小且設計更加合理的晶片封裝結構、具有內埋元件的電路板及其製作方法。Therefore, it is necessary to provide a chip package structure with a smaller size and a more rational design, a circuit board having buried components, and a method of fabricating the same.
一種製作具有內埋元件的電路板的方法,包括步驟:提供嵌合結構,該嵌合結構包括第一介電層及電子元件,該第一介電層包括相對的第一表面和第二表面,該電子元件包括複數導電連接端子,該電子元件嵌合於該第一介電層的第一表面且該電子元件露出於該第一表面的表面與該第一表面齊平,該電子元件的複數導電連接端子露出於該第一表面;在該第一介電層內形成複數貫穿該第一表面和第二表面的通孔;通過電鍍工藝在該第一表面和第二表面分別形成第一導電線路層和第二導電線路層,並在該複數通孔內形成電連接該第一導電線路層和第二導電線路層的導電通孔,該第一導電線路層包括設置於該電子元件的部分導電連接端子與該第一表面齊平的表面上的端子連接線路;及在該第一導電線路層一側依次形成第二介電層和第三導電線路層,從而形成具有內埋元件的電路板。A method of fabricating a circuit board having embedded components, comprising the steps of providing a mating structure comprising a first dielectric layer and an electronic component, the first dielectric layer including opposing first and second surfaces The electronic component includes a plurality of conductive connection terminals, the electronic component is mounted on the first surface of the first dielectric layer, and a surface of the electronic component exposed on the first surface is flush with the first surface, the electronic component a plurality of conductive connection terminals are exposed on the first surface; a plurality of through holes penetrating the first surface and the second surface are formed in the first dielectric layer; and the first surface and the second surface are respectively formed by the electroplating process a conductive circuit layer and a second conductive circuit layer, and forming conductive vias electrically connecting the first conductive circuit layer and the second conductive circuit layer in the plurality of via holes, the first conductive circuit layer including the electronic component disposed on the electronic component a terminal connection line on a surface of the portion of the conductive connection terminal that is flush with the first surface; and a second dielectric layer and a third conductive circuit layer are sequentially formed on a side of the first conductive circuit layer, thereby forming A circuit board having a buried element.
一種具有內埋元件的電路板,包括嵌合結構、第一導電線路層、第二導電線路層、第二介電層及第三導電線路層。該嵌合結構包括第一介電層及電子元件,該第一介電層包括相對的第一表面和第二表面,該電子元件包括複數導電連接端子,該電子元件嵌合於該第一介電層的第一表面且該電子元件露出於該第一表面的表面與該第一表面齊平,該電子元件的複數導電連接端子露出於該第一表面。該第一導電線路層和第二導電線路層分別設置於該第一表面和第二表面,該第一導電線路層包括設置於該電子元件的部分導電連接端子與該第一表面齊平的表面上的端子連接線路。該第二介電層和第三導電線路層依次形成於該第一導電線路層一側。A circuit board having a buried component includes a mating structure, a first conductive wiring layer, a second conductive wiring layer, a second dielectric layer, and a third conductive wiring layer. The first structure includes a first dielectric layer and an electronic component, the first dielectric layer includes an opposite first surface and a second surface, the electronic component includes a plurality of conductive connection terminals, and the electronic component is embedded in the first dielectric The first surface of the electrical layer and the surface of the electronic component exposed on the first surface are flush with the first surface, and the plurality of conductive connection terminals of the electronic component are exposed on the first surface. The first conductive circuit layer and the second conductive circuit layer are respectively disposed on the first surface and the second surface, and the first conductive circuit layer includes a surface of the electronic component that is partially flush with the first surface The terminal on the connection line. The second dielectric layer and the third conductive circuit layer are sequentially formed on one side of the first conductive circuit layer.
一種晶片封裝結構,包括如上所述的具有內埋元件的電路板及晶片。該具有內埋元件的電路板進一步包括第三介電層、第四導電線路層、第一防焊層及第二防焊層。該第三介電層和第四導電線路層依次形成於該第二導電線路層一側,該第一防焊層和第二防焊層分別形成於該第三導電線路層和第四導電線路層上,該第一防焊層部分覆蓋該第三導電線路層,露出於該第一防焊層的第三導電線路層構成第一電性連接墊,該第二防焊層部分覆蓋該第四導電線路層,露出於該第二防焊層的第四導電線路層構成第二電性連接墊。該晶片封裝於該具有內埋元件的電路板上且與該第一電性連接墊電連接。A chip package structure comprising a circuit board having a buried component and a wafer as described above. The circuit board having the embedded component further includes a third dielectric layer, a fourth conductive wiring layer, a first solder resist layer, and a second solder resist layer. The third dielectric layer and the fourth conductive circuit layer are sequentially formed on one side of the second conductive circuit layer, and the first solder resist layer and the second solder resist layer are respectively formed on the third conductive circuit layer and the fourth conductive line The first solder resist layer partially covers the third conductive circuit layer, and the third conductive circuit layer exposed on the first solder resist layer constitutes a first electrical connection pad, and the second solder resist layer partially covers the first conductive layer The fourth conductive circuit layer, the fourth conductive circuit layer exposed on the second solder resist layer constitutes a second electrical connection pad. The chip is packaged on the circuit board having the embedded component and electrically connected to the first electrical connection pad.
相對於習知技術,本實施例的具有內埋元件的電路板將電子元件置入電路板內部,則電路板上可設置的元件的數量增加,給電路板的設計增加了彈性。另外,本實施例中的具有內埋元件的電路板可應用於HDI高密度積層板。Compared with the prior art, the circuit board with the embedded component of the present embodiment places the electronic component inside the circuit board, and the number of components that can be disposed on the circuit board increases, which increases the flexibility of the design of the circuit board. In addition, the circuit board having the embedded component in this embodiment can be applied to an HDI high-density laminated board.
11...第一介電層11. . . First dielectric layer
12...電子元件12. . . Electronic component
14...承載板14. . . Carrier board
13...離型層13. . . Release layer
121...導電連接端子121. . . Conductive connection terminal
112...第一表面112. . . First surface
114...第二表面114. . . Second surface
10...嵌合結構10. . . Chimeric structure
115...通孔115. . . Through hole
15...第一導電線路層15. . . First conductive circuit layer
16...第二導電線路層16. . . Second conductive circuit layer
17...導電通孔17. . . Conductive through hole
151...端子連接線路151. . . Terminal connection line
18...第二介電層18. . . Second dielectric layer
19...第三導電線路層19. . . Third conductive circuit layer
20...第三介電層20. . . Third dielectric layer
21...第四導電線路層twenty one. . . Fourth conductive circuit layer
22...導電孔twenty two. . . Conductive hole
23...第一防焊層twenty three. . . First solder mask
24...第二防焊層twenty four. . . Second solder mask
25...第一電性連接墊25. . . First electrical connection pad
26...第二電性連接墊26. . . Second electrical connection pad
30...具有內埋元件的電路板30. . . Circuit board with embedded components
27...第一表面處理層27. . . First surface treatment layer
28...第二表面處理層28. . . Second surface treatment layer
29...焊料凸塊29. . . Solder bump
40...晶片40. . . Wafer
50...晶片封裝結構50. . . Chip package structure
34...焊球34. . . Solder ball
圖1是本發明實施例提供的兩個介電層、兩個電子元件、及相對兩側分別具有離型層的承載板的剖面圖。1 is a cross-sectional view of two dielectric layers, two electronic components, and a carrier plate having a release layer on opposite sides, respectively, provided by an embodiment of the present invention.
圖2是將圖1中的介電層、電子元件及承載板按照介電層、電子元件、承載板、電子元件及介電層的順序層疊後形成的多層結構的剖視圖。2 is a cross-sectional view showing a multilayer structure in which the dielectric layer, the electronic component, and the carrier substrate of FIG. 1 are laminated in the order of a dielectric layer, an electronic component, a carrier, an electronic component, and a dielectric layer.
圖3是將圖2的多層結構中的承載板分離出去後形成的電子元件嵌入介電層內的結構的剖視圖。3 is a cross-sectional view showing a structure in which an electronic component formed by separating a carrier sheet in the multilayer structure of FIG. 2 is embedded in a dielectric layer.
圖4是在圖3中的介電層內開設通孔後的剖視圖。4 is a cross-sectional view showing a through hole formed in the dielectric layer of FIG. 3.
圖5是在圖4中的介電層相對兩側分別形成導電線路層並在通孔內形成導電材料以形成導電通孔後的剖視圖。5 is a cross-sectional view showing a conductive circuit layer formed on opposite sides of the dielectric layer of FIG. 4 and a conductive material formed in the via hole to form a conductive via.
圖6是在圖5中的兩個導電線路層側分別依次形成介電層和導電線路層後的剖視圖。Fig. 6 is a cross-sectional view showing the dielectric layer and the conductive wiring layer sequentially formed on the two conductive wiring layer sides in Fig. 5, respectively.
圖7是在圖6中的最外側的導電線路層上分別形成防焊層後形成具有內埋元件的電路板的剖視圖。Fig. 7 is a cross-sectional view showing a circuit board having a buried element formed after forming a solder resist layer on the outermost conductive wiring layer of Fig. 6, respectively.
圖8是在圖7的電路板的一側形成焊料凸塊後剖視圖。Figure 8 is a cross-sectional view showing a solder bump formed on one side of the circuit board of Figure 7.
圖9是在圖8的具有內埋元件的電路板上封裝晶片後形成的晶片封裝結構的剖視圖。9 is a cross-sectional view of a wafer package structure formed after the wafer is packaged on the circuit board having the embedded component of FIG.
請參閱圖1至圖9本發明實施例提供一種製作晶片封裝結構的方法,包括如下步驟:Referring to FIG. 1 to FIG. 9 , a method for fabricating a chip package structure includes the following steps:
步驟1:請參閱圖1和圖2,提供兩個第一介電層11、兩個電子元件12及承載板14,在該承載板14的相對兩側分別設置離型層13,並依次層疊並一次壓合第一介電層11、電子元件12、承載板14、電子元件12、第一介電層11成為一個整體。Step 1: Referring to FIG. 1 and FIG. 2, two first dielectric layers 11, two electronic components 12, and a carrier board 14 are provided. Separate layers 13 are respectively disposed on opposite sides of the carrier board 14, and are sequentially stacked. The first dielectric layer 11, the electronic component 12, the carrier board 14, the electronic component 12, and the first dielectric layer 11 are laminated together at a time.
該兩個第一介電層11的材料可以為聚醯亞胺(Polyimide, PI)、聚乙烯對苯二甲酸乙二醇酯(Polyethylene Terephthalate, PET)或聚萘二甲酸乙二醇酯(Polyethylene naphthalate,PEN)、PP(Prepreg)或ABF(Ajinomoto Build-up film)等,優選為PP或ABF,每個第一介電層11均包括相對的第一表面112和第二表面114。該電子元件12可以為主動或被動元件,如電阻、電容等,本實施例中,該電子元件12為陶瓷電容器,包括兩個導電連接端子121,即陶瓷電容器的電極。該承載板14用於在壓合過程中支撐和承載該兩個第一介電層11和兩個電子元件12,該承載板14的材料可以為PI、玻璃纖維層壓布或金屬如銅等。該離型層13為將塑膠薄膜做等離子處理或塗氟處理形成,或在薄膜材質如PET、PE、OPP的表層上塗矽(silicone)離型劑形成,該離型層13用於在後續步驟中方便該兩個第一介電層11和電子元件12與承載板14的相互剝離。The material of the two first dielectric layers 11 may be polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (Polyethylene). Naphthalate, PEN), PP (Prepreg) or ABF (Ajinomoto Build-up film), etc., preferably PP or ABF, each of the first dielectric layers 11 includes an opposite first surface 112 and second surface 114. The electronic component 12 can be an active or passive component, such as a resistor, a capacitor, etc. In the embodiment, the electronic component 12 is a ceramic capacitor and includes two conductive connection terminals 121, that is, electrodes of a ceramic capacitor. The carrier board 14 is used to support and carry the two first dielectric layers 11 and two electronic components 12 during the pressing process. The material of the carrier board 14 may be PI, fiberglass laminate or metal such as copper. . The release layer 13 is formed by plasma processing or fluorine coating of a plastic film, or by forming a silicone release agent on a surface of a film material such as PET, PE, OPP, and the release layer 13 is used in subsequent steps. The two first dielectric layers 11 and the electronic component 12 and the carrier board 14 are mutually separated.
可以理解的是,該導電連接端子121的數量也可以多於兩個,並不限於本實施例。It can be understood that the number of the conductive connection terminals 121 may also be more than two, and is not limited to the embodiment.
壓合該第一介電層11、電子元件12、承載板14、電子元件12、第一介電層11可在壓合機中進行。經過壓合後,兩個電子元件12分別貼合在相鄰的離型層13的表面;兩個第一介電層11的第一表面112與對應的離型層13相對並在壓合力作用下分別貼合於對應的離型層13的表面,且使每個電子元件12嵌合於對應的第一介電層11的第一表面112內,每個電子元件12鄰近於對應離型層13的表面與對應的第一介電層11的第一表面112相齊平,且每個電子元件12的兩個導電連接端子121露出於第一表面112,每個第一介電層11的厚度大於對應電子元件12的厚度。Pressing the first dielectric layer 11, the electronic component 12, the carrier board 14, the electronic component 12, and the first dielectric layer 11 can be performed in a press machine. After pressing, the two electronic components 12 are respectively attached to the surface of the adjacent release layer 13; the first surface 112 of the two first dielectric layers 11 is opposite to the corresponding release layer 13 and is pressed by the pressing force. The lower surface is respectively attached to the surface of the corresponding release layer 13, and each electronic component 12 is fitted into the first surface 112 of the corresponding first dielectric layer 11, and each electronic component 12 is adjacent to the corresponding release layer. The surface of the first dielectric layer 11 is flush with the first surface 112 of the corresponding first dielectric layer 11, and the two conductive connection terminals 121 of each electronic component 12 are exposed on the first surface 112, each of the first dielectric layers 11. The thickness is greater than the thickness of the corresponding electronic component 12.
步驟2:請參閱圖3,利用剝膜工藝將該承載板14和兩個離型層13去除,得到兩個包括第一介電層11和嵌合於該第一介電層11內的電子元件12的嵌合結構10。Step 2: Referring to FIG. 3, the carrier board 14 and the two release layers 13 are removed by a stripping process to obtain two electrons including the first dielectric layer 11 and the electrons embedded in the first dielectric layer 11. The fitting structure 10 of the element 12.
因為該承載板14與第一介電層11和電子元件12之間均設置離型層13,利用離型層13的可剝離性,可方便地將該承載板14和離型層13剝離去除,從而將承載板14相對兩側的結構相互分離,形成兩個嵌合結構10。Since the release layer 13 is disposed between the carrier plate 14 and the first dielectric layer 11 and the electronic component 12, the carrier layer 14 and the release layer 13 can be conveniently removed by utilizing the peelability of the release layer 13. Thereby, the structures on opposite sides of the carrier plate 14 are separated from each other to form two fitting structures 10.
兩個嵌合結構10結構相同,以下以其中之一進行說明。該嵌合結構10包括第一介電層11及嵌合於該第一介電層11的第一表面112的電子元件12,該電子元件12露出於該第一表面112的表面與該第一表面112齊平,且電子元件12的兩個導電連接端子121露出於該第一表面112。The two fitting structures 10 have the same structure, and one of them will be described below. The mating structure 10 includes a first dielectric layer 11 and an electronic component 12 mounted on the first surface 112 of the first dielectric layer 11. The electronic component 12 is exposed on the surface of the first surface 112 and the first The surface 112 is flush and the two conductive connection terminals 121 of the electronic component 12 are exposed on the first surface 112.
步驟3:請參閱圖4,在該介電層上形成貫穿該第一表面112和第二表面114的複數通孔115。形成該複數通孔115的方法可以為雷射蝕孔或機械鑽孔。Step 3: Referring to FIG. 4, a plurality of vias 115 are formed in the dielectric layer through the first surface 112 and the second surface 114. The method of forming the plurality of vias 115 may be a laser etched hole or a mechanical boring.
步驟4:請參閱圖5,通過電鍍的方法在該第一表面112和該電子元件12露出於該第一表面112的表面形成第一導電線路層15,在該第二表面114形成第二導電線路層16,並在該複數通孔115內分別形成使該第一導電線路層15和第二導電線路層16電導通的導電通孔17。Step 4: Referring to FIG. 5, a first conductive circuit layer 15 is formed on the surface of the first surface 112 and the electronic component 12 exposed on the first surface 112 by electroplating, and a second conductive layer is formed on the second surface 114. The circuit layer 16 and the conductive vias 17 for electrically conducting the first conductive wiring layer 15 and the second conductive wiring layer 16 are respectively formed in the plurality of via holes 115.
通過電鍍的方法形成第一導電線路層15、第二導電線路層16及導電通孔17的方法具體包括如下步驟:The method for forming the first conductive circuit layer 15, the second conductive circuit layer 16, and the conductive vias 17 by the method of electroplating specifically includes the following steps:
首先,對嵌合結構10進行清洗,去除其表面污漬及進行步驟3蝕孔或鑽孔工藝時殘留的廢渣等,使嵌合結構10的表面及通孔115的內壁清潔,以利於後續步驟的進行。First, the fitting structure 10 is cleaned to remove surface stains and residual slags during the step 3 etching or drilling process, so that the surface of the fitting structure 10 and the inner wall of the through hole 115 are cleaned to facilitate subsequent steps. Going on.
其次,通過化學鍍銅的方法在該第一介電層11的第一表面112和第二表面114、該電子元件12露出於第一表面112的表面以及通孔115的內壁形成導電膜(圖未示)。可以理解,形成該導電膜的工藝還可以為黑孔化工藝、黑影工藝等,並不以本實施例為限。Next, a conductive film is formed on the first surface 112 and the second surface 114 of the first dielectric layer 11, the surface of the electronic component 12 exposed on the first surface 112, and the inner wall of the via 115 by electroless copper plating ( The figure is not shown). It can be understood that the process of forming the conductive film may also be a black hole process, a black shadow process, etc., and is not limited to the embodiment.
再次,提供圖案化的光致抗蝕劑層(圖未示),使預形成第一導電線路層15、第二導電線路層16和導電通孔17的區域露出於該光致抗蝕劑層,其他區域被該光致抗蝕劑層所遮擋。Again, a patterned photoresist layer (not shown) is provided to expose regions pre-formed with the first conductive wiring layer 15, the second conductive wiring layer 16, and the conductive vias to the photoresist layer. The other areas are blocked by the photoresist layer.
進一步地,將形成了導電膜和光致抗蝕劑層的嵌合結構10置入電鍍槽並連接電極進行電鍍,在露出於該光致抗蝕劑層的導電膜上形成電鍍銅層。在電鍍過程中,電鍍銅層填滿該通孔115,形成該導電通孔17。Further, the fitting structure 10 in which the conductive film and the photoresist layer are formed is placed in a plating bath and connected to the electrode for electroplating, and an electroplated copper layer is formed on the conductive film exposed on the photoresist layer. In the electroplating process, an electroplated copper layer fills the via 115 to form the conductive via 17.
最後,去除該光致抗蝕劑層,並蝕刻去除被該光致抗蝕劑層遮擋的導電膜,形成第一導電線路層15、第二導電線路層16及導電通孔17。Finally, the photoresist layer is removed, and the conductive film blocked by the photoresist layer is etched away to form the first conductive wiring layer 15, the second conductive wiring layer 16, and the conductive vias 17.
該第一導電線路層15包括兩個端子連接線路151,該兩個端子連接線路151分別至少部分形成於該兩個導電連接端子121表面,以分別電連接該兩個導電連接端子121。The first conductive circuit layer 15 includes two terminal connection lines 151. The two terminal connection lines 151 are respectively formed at least partially on the surfaces of the two conductive connection terminals 121 to electrically connect the two conductive connection terminals 121, respectively.
可以理解的是,其中一個導電連接端子121也可以不與第一導電線路層15電連接,而是通過導電盲孔(圖未示)與第二導電線路層16電連接,另一個導電連接端子121仍通過端子連接線路151與第一導電線路層15電連接,即部分導電連接端子121與第一導電線路層15電連接,剩餘部分導電連接端子121通過導電盲孔與第二導電線路層16電連接,並不以本實施例為限。該導電盲孔的製作方法如下:在該第一介電層11內形成穿過該第二表面114並連通其中一導電連接端子121的盲孔,使對應的導電連接端子121從該盲孔露出於該第二表面114,在通過電鍍工藝形成第一導電線路層15、第二導電線路層16及導電通孔17的同時,在該盲孔內形成將該第二導電線路層16與對應導電連接端子121電連接的導電盲孔。It can be understood that one of the conductive connection terminals 121 may not be electrically connected to the first conductive circuit layer 15, but may be electrically connected to the second conductive circuit layer 16 through a conductive blind hole (not shown), and the other conductive connection terminal 121 is still electrically connected to the first conductive circuit layer 15 through the terminal connection line 151, that is, the partial conductive connection terminal 121 is electrically connected to the first conductive circuit layer 15, and the remaining conductive connection terminal 121 passes through the conductive blind hole and the second conductive circuit layer 16 Electrical connection is not limited to this embodiment. The conductive via hole is formed in the first dielectric layer 11 and forms a blind via through the second surface 114 and communicates with one of the conductive connection terminals 121 to expose the corresponding conductive connection terminal 121 from the blind via hole. On the second surface 114, while forming the first conductive circuit layer 15, the second conductive circuit layer 16, and the conductive via 17 by an electroplating process, forming the second conductive circuit layer 16 and the corresponding conductive in the blind via. A conductive blind hole electrically connected to the connection terminal 121.
步驟5:請參閱圖6,在該第一導電線路層15一側依次形成第二介電層18和第三導電線路層19,並在該第二導電線路層16一側依次形成第三介電層20和第四導電線路層21。Step 5: Referring to FIG. 6, a second dielectric layer 18 and a third conductive circuit layer 19 are sequentially formed on the first conductive circuit layer 15 side, and a third dielectric layer is sequentially formed on the second conductive circuit layer 16 side. The electric layer 20 and the fourth conductive wiring layer 21.
該第二介電層18和第三導電線路層19及該第三介電層20和第四導電線路層21分別可通過增層法制作形成。該第三導電線路層19與該第一導電線路層15之間,及該第四導電線路層21與該第二導電線路層16之間分別可通過形成於該第二介電層18和第三介電層20內的導電孔22電連接。The second dielectric layer 18 and the third conductive wiring layer 19 and the third dielectric layer 20 and the fourth conductive wiring layer 21 can be respectively formed by a build-up method. The third conductive circuit layer 19 and the first conductive circuit layer 15 and the fourth conductive circuit layer 21 and the second conductive circuit layer 16 are respectively formed on the second dielectric layer 18 and The conductive holes 22 in the three dielectric layers 20 are electrically connected.
步驟6:請參閱圖7,在該第三導電線路層19上部分覆蓋第一防焊層23,以及在該第四導電線路層21上部分覆蓋第二防焊層24,露出於該第一防焊層23的第三導電線路層19構成複數第一電性連接墊25,露出於該第二防焊層24的第四導電線路層21構成複數第二電性連接墊26,從而形成具有內埋元件的電路板30。Step 6: Referring to FIG. 7 , the first solder resist layer 23 is partially covered on the third conductive circuit layer 19 , and the second solder resist layer 24 is partially covered on the fourth conductive trace layer 21 to be exposed to the first The third conductive circuit layer 19 of the solder resist layer 23 constitutes a plurality of first electrical connection pads 25, and the fourth conductive circuit layer 21 exposed to the second solder resist layer 24 constitutes a plurality of second electrical connection pads 26, thereby forming A circuit board 30 in which components are embedded.
本實施例中,該第一電性連接墊25和第二電性連接墊26分別呈陣列式排布,該第一電性連接墊25用於與晶片(如圖9中的晶片40)電連接,該第二電性連接墊26用於與其他電子設備如電路板等電連接。In this embodiment, the first electrical connection pad 25 and the second electrical connection pad 26 are respectively arranged in an array, and the first electrical connection pad 25 is used to electrically exchange with the wafer (such as the wafer 40 in FIG. 9). The second electrical connection pad 26 is electrically connected to other electronic devices such as a circuit board.
可以理解,該第三導電線路層19與該第一導電線路層15之間以及第四導電線路層21與該第二導電線路層16之間分別可進一步設置更多的介電層和導電線路層,以形成具有更多導電線路層的電路板。另外,該具有內埋元件的電路板30中電子元件12的數量也可以為複數,並不以本實施例的一個為限。It can be understood that more dielectric layers and conductive lines can be further disposed between the third conductive circuit layer 19 and the first conductive circuit layer 15 and between the fourth conductive circuit layer 21 and the second conductive circuit layer 16, respectively. Layers to form a circuit board with more conductive circuit layers. In addition, the number of the electronic components 12 in the circuit board 30 having the embedded component may also be plural, and is not limited to one of the embodiments.
如圖7所示,本實施例的具有內埋元件的電路板30包括嵌合結構10、第一導電線路層15、第二導電線路層16、第二介電層18、第三導電線路層19、第三介電層20、第四導電線路層21、第一防焊層23及第二防焊層24。該第一導電線路層15形成於該第一介電層11的第一表面112和該電子元件12露出於該第一表面112的表面,第二導電線路層16形成於第一介電層11的第二表面,該第一導電線路層15包括兩個端子連接線路151,該兩個端子連接線路151分別至少部分形成於該兩個導電連接端子121表面,以分別電連接該兩個導電連接端子121。該第一介電層11內形成有電連接該第一導電線路層15和第二導電線路層16的導電通孔17。該第二介電層18和第三導電線路層19依次形成於該第一導電線路層15一側,該第三介電層20和第四導電線路層21依次形成於該第二導電線路層16一側,該第三導電線路層19與該第一導電線路層15之間,及該第四導電線路層21與該第二導電線路層16之間分別通過形成於該第二介電層18和第三介電層20內的導電孔22電連接。該第一防焊層23形成於該第三導電線路層19上並部分覆蓋該第三導電線路層19,露出於該第一防焊層23的第三導電線路層19構成複數第一電性連接墊25;該第二防焊層24形成於該第四導電線路層21上並部分覆蓋該第四導電線路層21,露出於該第二防焊層24的第四導電線路層21構成複數第二電性連接墊26。As shown in FIG. 7, the circuit board 30 having the embedded component of the present embodiment includes a fitting structure 10, a first conductive wiring layer 15, a second conductive wiring layer 16, a second dielectric layer 18, and a third conductive wiring layer. 19. The third dielectric layer 20, the fourth conductive wiring layer 21, the first solder resist layer 23, and the second solder resist layer 24. The first conductive circuit layer 15 is formed on the first surface 112 of the first dielectric layer 11 and the electronic component 12 is exposed on the surface of the first surface 112. The second conductive circuit layer 16 is formed on the first dielectric layer 11 The second surface of the first conductive circuit layer 15 includes two terminal connection lines 151. The two terminal connection lines 151 are respectively formed at least partially on the surfaces of the two conductive connection terminals 121 to electrically connect the two conductive connections respectively. Terminal 121. A conductive via 17 electrically connecting the first conductive wiring layer 15 and the second conductive wiring layer 16 is formed in the first dielectric layer 11. The second dielectric layer 18 and the third conductive circuit layer 19 are sequentially formed on the first conductive circuit layer 15 side, and the third dielectric layer 20 and the fourth conductive circuit layer 21 are sequentially formed on the second conductive circuit layer. a side of the 16th, between the third conductive circuit layer 19 and the first conductive circuit layer 15, and between the fourth conductive circuit layer 21 and the second conductive circuit layer 16 are respectively formed on the second dielectric layer 18 and the conductive holes 22 in the third dielectric layer 20 are electrically connected. The first solder resist layer 23 is formed on the third conductive circuit layer 19 and partially covers the third conductive circuit layer 19. The third conductive circuit layer 19 exposed on the first solder resist layer 23 constitutes a plurality of first electrical properties. The second solder resist layer 24 is formed on the fourth conductive circuit layer 21 and partially covers the fourth conductive circuit layer 21, and the fourth conductive circuit layer 21 exposed on the second solder resist layer 24 constitutes a plurality of The second electrical connection pad 26.
步驟7:請參閱圖8,對該第一電性連接墊25和第二電性連接墊26進行表面鍍金,在該第一電性連接墊25和第二電性連接墊26分別形成第一表面處理層27和第二表面處理層28,並在該第一表面處理層27表面形成焊料凸塊29。Step 7: Referring to FIG. 8 , the first electrical connection pad 25 and the second electrical connection pad 26 are surface-plated, and the first electrical connection pad 25 and the second electrical connection pad 26 respectively form a first surface. The surface treatment layer 27 and the second surface treatment layer 28 are formed with solder bumps 29 on the surface of the first surface treatment layer 27.
該第一表面處理層27和第二表面處理層28用於保護該第一電性連接墊25和第二電性連接墊26以防止其氧化。該複數第一表面處理層27和第二表面處理層28分別與對應的第一電性連接墊25和第二電性連接墊26電導通。可以理解,形成該第一表面處理層27和第二表面處理層28的方法也可以取代為鍍鎳金、化鎳浸金、鍍鎳鈀金、鍍錫等,並不以本實施例為限。The first surface treatment layer 27 and the second surface treatment layer 28 serve to protect the first electrical connection pads 25 and the second electrical connection pads 26 from oxidation. The plurality of first surface treatment layers 27 and the second surface treatment layer 28 are electrically connected to the corresponding first electrical connection pads 25 and second electrical connection pads 26, respectively. It can be understood that the method of forming the first surface treatment layer 27 and the second surface treatment layer 28 may also be replaced by nickel plating gold, nickel immersion gold, nickel plating palladium gold, tin plating, etc., which is not limited to the embodiment. .
本實施例中,可通過電鍍或印刷的方式將複數焊料凸塊29分別形成於該複數第一電性連接墊25上的第一表面處理層27的表面,且該複數焊料凸塊29凸出於該第一防焊層23的表面。該焊料凸塊29可以為柱狀、球狀等,本實施例中為柱狀,其材料一般主要為錫。可以理解的是,該第一表面處理層27和第二表面處理層28也可以省略,此時該焊料凸塊29直接形成於該第一電性連接墊25的表面。In this embodiment, a plurality of solder bumps 29 are respectively formed on the surface of the first surface treatment layer 27 on the plurality of first electrical connection pads 25 by electroplating or printing, and the plurality of solder bumps 29 are protruded. On the surface of the first solder resist layer 23. The solder bumps 29 may be columnar, spherical, or the like. In this embodiment, they are columnar, and the material thereof is generally mainly tin. It can be understood that the first surface treatment layer 27 and the second surface treatment layer 28 can also be omitted. At this time, the solder bumps 29 are directly formed on the surface of the first electrical connection pad 25.
步驟8:請參閱圖9,提供晶片40,並將晶片40電連接於該複數第一電性連接墊25及封裝於該具有內埋元件的電路板30,形成晶片封裝結構50。Step 8: Referring to FIG. 9, a wafer 40 is provided, and the wafer 40 is electrically connected to the plurality of first electrical connection pads 25 and packaged on the circuit board 30 having embedded components to form a chip package structure 50.
本實施例中,該晶片40為覆晶封裝(flip-chip)晶片,該晶片40具有分別與該複數第一電性連接墊25一一對應的複數接觸凸塊(圖未示),該接觸凸塊一般也由焊料製成,其材料主要為錫。該複數接觸凸塊與對應的焊料凸塊29的連接可採用如下方法:首先,將晶片40設置於具有內埋元件的電路板30上,並使該複數接觸凸塊分別與對應的焊料凸塊29相接觸;然後,將該晶片40和具有內埋元件的電路板30一起經過回焊爐,使接觸凸塊和焊料凸塊29熔融結合後形成焊球34並冷卻固化,從而使接觸凸塊和焊料凸塊29相互連接並電導通。可以理解的是,該晶片40也可以為導線鍵合(wire bonding, WB)晶片,可採用習知封裝方法封裝於該具有內埋元件的電路板30,並不以本實施例為限。In this embodiment, the wafer 40 is a flip-chip wafer having a plurality of contact bumps (not shown) corresponding to the plurality of first electrical connection pads 25, respectively. The bumps are also typically made of solder and the material is primarily tin. The connection of the plurality of contact bumps to the corresponding solder bumps 29 may be performed by first disposing the wafer 40 on the circuit board 30 having the embedded component and respectively making the plurality of contact bumps and the corresponding solder bumps. 29 phase contact; then, the wafer 40 and the circuit board 30 having the embedded component are passed through a reflow oven, and the contact bump and the solder bump 29 are fusion-bonded to form a solder ball 34 and cooled and solidified, thereby making the contact bump The solder bumps 29 are connected to each other and electrically connected. It can be understood that the wafer 40 can also be a wire bonding (WB) wafer, and can be packaged on the circuit board 30 having the embedded component by a conventional packaging method, which is not limited to the embodiment.
如圖9所示,本實施例的晶片封裝結構50包括具有內埋元件的電路板30及封裝於該具有內埋元件的電路板30的晶片40。該晶片40通過形成於該第一電性連接墊25與該晶片40之間的複數焊球34與具有內埋元件的電路板30電連接,每個焊球34的一端焊接於該第一電性連接墊25,相對的另一端連接於該晶片40,該焊球34的材料一般主要包括錫。As shown in FIG. 9, the chip package structure 50 of the present embodiment includes a circuit board 30 having buried components and a wafer 40 packaged on the circuit board 30 having embedded components. The wafer 40 is electrically connected to the circuit board 30 having the embedded component through a plurality of solder balls 34 formed between the first electrical connection pad 25 and the wafer 40. One end of each solder ball 34 is soldered to the first electric The connecting pads 25 are connected to the wafer 40 at opposite ends. The material of the solder balls 34 generally comprises mainly tin.
相對於習知技術,本實施例的具有內埋元件的電路板30將電子元件12置入電路板內部,則電路板上可設置的元件的數量增加,給電路板的設計增加了彈性。另外,本實施例中的具有內埋元件的電路板30可應用於HDI高密度積層板。With respect to the prior art, the circuit board 30 with the embedded component of the present embodiment places the electronic component 12 inside the circuit board, and the number of components that can be disposed on the circuit board is increased, which increases the flexibility of the design of the circuit board. In addition, the circuit board 30 having the embedded component in the present embodiment can be applied to an HDI high-density laminated board.
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,於爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be covered by the following claims.
50...晶片封裝結構50. . . Chip package structure
40...晶片40. . . Wafer
25...第一電性連接墊25. . . First electrical connection pad
27...第一表面處理層27. . . First surface treatment layer
34...焊球34. . . Solder ball
23...第一防焊層twenty three. . . First solder mask
Claims (12)
提供嵌合結構,該嵌合結構包括第一介電層及電子元件,該第一介電層包括相對的第一表面和第二表面,該電子元件包括複數導電連接端子,該電子元件嵌合於該第一介電層的第一表面且該電子元件露出於該第一表面的表面與該第一表面齊平,該電子元件的複數導電連接端子露出於該第一表面;
在該第一介電層內形成複數貫穿該第一表面和第二表面的通孔;
通過電鍍工藝在該第一表面和第二表面分別形成第一導電線路層和第二導電線路層,並在該複數通孔內形成電連接該第一導電線路層和第二導電線路層的導電通孔,該第一導電線路層包括設置於該電子元件的部分導電連接端子與該第一表面齊平的表面上的端子連接線路;及
在該第一導電線路層一側依次形成第二介電層和第三導電線路層,從而形成具有內埋元件的電路板。A method of fabricating a circuit board having embedded components, comprising the steps of:
Providing a fitting structure comprising a first dielectric layer including an opposite first surface and a second surface, the electronic component comprising a plurality of conductive connection terminals, the electronic component being embedded The first surface of the first dielectric layer and the surface of the electronic component exposed on the first surface are flush with the first surface, and the plurality of conductive connection terminals of the electronic component are exposed on the first surface;
Forming a plurality of through holes penetrating the first surface and the second surface in the first dielectric layer;
Forming a first conductive circuit layer and a second conductive circuit layer on the first surface and the second surface, respectively, by an electroplating process, and forming a conductive connection electrically connecting the first conductive circuit layer and the second conductive circuit layer in the plurality of via holes a via hole, the first conductive circuit layer includes a terminal connection line disposed on a surface of the electronic component with the conductive connection terminal flush with the first surface; and a second dielectric layer is sequentially formed on the first conductive circuit layer side The electrical layer and the third conductive wiring layer form a circuit board having embedded components.
利用剝膜工藝將該承載板和兩個離型層去除,得到兩個包括第一介電層和嵌合於該第一介電層內的電子元件的嵌合結構。A method of fabricating a circuit board having a buried component as described in claim 1, wherein the method of fabricating the same comprises the steps of: providing two first dielectric layers, two electronic components, and a carrier board, Separate layers are respectively disposed on the opposite sides of the board, and the first dielectric layer, the electronic component, the carrier board, the electronic component, and the first dielectric layer are laminated and laminated one at a time; and the carrier is formed by a stripping process The plate and the two release layers are removed to provide two mating structures including a first dielectric layer and electronic components embedded in the first dielectric layer.
嵌合結構,該嵌合結構包括第一介電層及電子元件,該第一介電層包括相對的第一表面和第二表面,該電子元件包括複數導電連接端子,該電子元件嵌合於該第一介電層的第一表面且該電子元件露出於該第一表面的表面與該第一表面齊平,該電子元件的複數導電連接端子露出於該第一表面;
第一導電線路層和第二導電線路層,分別設置於該第一表面和第二表面,該第一導電線路層包括設置於該電子元件的部分導電連接端子與該第一表面齊平的表面上的端子連接線路;及
第二介電層和第三導電線路層,依次形成於該第一導電線路層一側。A circuit board having embedded components, comprising:
a fitting structure comprising a first dielectric layer and an electronic component, the first dielectric layer comprising opposite first and second surfaces, the electronic component comprising a plurality of conductive connection terminals, the electronic component being embedded a first surface of the first dielectric layer and a surface of the first surface exposed to the first surface is flush with the first surface, and a plurality of conductive connection terminals of the electronic component are exposed on the first surface;
a first conductive circuit layer and a second conductive circuit layer respectively disposed on the first surface and the second surface, the first conductive circuit layer comprising a surface of the electronic component that is partially flush with the first surface The upper terminal connection line; and the second dielectric layer and the third conductive line layer are sequentially formed on one side of the first conductive line layer.
The chip package structure of claim 10, wherein the first dielectric layer has conductive vias electrically connected to other portions of the plurality of conductive terminals of the electronic component and the second conductive circuit layer.
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TWI571185B (en) * | 2014-10-15 | 2017-02-11 | 矽品精密工業股份有限公司 | Electronic package and method of manufacture |
CN111354687B (en) * | 2018-12-21 | 2023-12-15 | 深南电路股份有限公司 | Packaging structure and preparation method thereof |
TWI762777B (en) * | 2019-03-27 | 2022-05-01 | 恆勁科技股份有限公司 | Semiconductor package substrate and manufacturing method thereof and electronic package and manufacturing method thereof |
WO2023272642A1 (en) * | 2021-06-30 | 2023-01-05 | 深南电路股份有限公司 | Electronic component package, electronic component, voltage regulator module, and voltage stabilizing device |
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